TWI800698B - 半導體元件結構及其製造方法 - Google Patents
半導體元件結構及其製造方法 Download PDFInfo
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- TWI800698B TWI800698B TW108143893A TW108143893A TWI800698B TW I800698 B TWI800698 B TW I800698B TW 108143893 A TW108143893 A TW 108143893A TW 108143893 A TW108143893 A TW 108143893A TW I800698 B TWI800698 B TW I800698B
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TW108143893A TWI800698B (zh) | 2019-12-02 | 2019-12-02 | 半導體元件結構及其製造方法 |
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TW108143893A TWI800698B (zh) | 2019-12-02 | 2019-12-02 | 半導體元件結構及其製造方法 |
Publications (2)
Publication Number | Publication Date |
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TW202123477A TW202123477A (zh) | 2021-06-16 |
TWI800698B true TWI800698B (zh) | 2023-05-01 |
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TW108143893A TWI800698B (zh) | 2019-12-02 | 2019-12-02 | 半導體元件結構及其製造方法 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11823992B2 (en) | 2021-09-24 | 2023-11-21 | Nanya Technology Corporation | Semiconductor device with uneven electrode surface and method for fabricating the same |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180537B1 (en) * | 1998-12-14 | 2001-01-30 | United Silicon Incorporated | Method of fabricating dielectric layer in alignment marker area |
US20070037405A1 (en) * | 2005-08-10 | 2007-02-15 | Samsung Electronics Co., Ltd. | Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers and devices so formed |
US20120181657A1 (en) * | 2011-01-17 | 2012-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer |
US20150255533A1 (en) * | 2011-03-04 | 2015-09-10 | Nick Lindert | Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer |
US20190096800A1 (en) * | 2017-09-28 | 2019-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Novel mim structure |
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2019
- 2019-12-02 TW TW108143893A patent/TWI800698B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180537B1 (en) * | 1998-12-14 | 2001-01-30 | United Silicon Incorporated | Method of fabricating dielectric layer in alignment marker area |
US20070037405A1 (en) * | 2005-08-10 | 2007-02-15 | Samsung Electronics Co., Ltd. | Methods of forming metal-insulator-metal (MIM) capacitors with passivation layers on dielectric layers and devices so formed |
US20120181657A1 (en) * | 2011-01-17 | 2012-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer |
US20150255533A1 (en) * | 2011-03-04 | 2015-09-10 | Nick Lindert | Semiconductor structure having a capacitor and metal wiring integrated in a same dielectric layer |
US20190096800A1 (en) * | 2017-09-28 | 2019-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Novel mim structure |
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TW202123477A (zh) | 2021-06-16 |
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