SG10202007641QA - Electronic device and method of manufacturing the same - Google Patents
Electronic device and method of manufacturing the sameInfo
- Publication number
- SG10202007641QA SG10202007641QA SG10202007641QA SG10202007641QA SG10202007641QA SG 10202007641Q A SG10202007641Q A SG 10202007641QA SG 10202007641Q A SG10202007641Q A SG 10202007641QA SG 10202007641Q A SG10202007641Q A SG 10202007641QA SG 10202007641Q A SG10202007641Q A SG 10202007641QA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- same
- electronic device
- electronic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
- H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/71—Three dimensional array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/73—Array where access device function, e.g. diode function, being merged with memorizing function of memory element
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190175654A KR20210083049A (en) | 2019-12-26 | 2019-12-26 | Electronic device and method for manufacturing electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202007641QA true SG10202007641QA (en) | 2021-07-29 |
Family
ID=76507638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202007641QA SG10202007641QA (en) | 2019-12-26 | 2020-08-11 | Electronic device and method of manufacturing the same |
Country Status (4)
Country | Link |
---|---|
US (3) | US11362139B2 (en) |
KR (1) | KR20210083049A (en) |
CN (1) | CN113053945B (en) |
SG (1) | SG10202007641QA (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11744167B2 (en) * | 2020-11-27 | 2023-08-29 | Samsung Electronics Co., Ltd. | Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6872963B2 (en) | 2002-08-08 | 2005-03-29 | Ovonyx, Inc. | Programmable resistance memory element with layered memory material |
KR101482814B1 (en) | 2007-07-25 | 2015-01-14 | 인터몰레큘러 인코퍼레이티드 | Multistate nonvolatile memory elements |
US9006793B2 (en) * | 2010-07-01 | 2015-04-14 | Panasonic Intellectual Property Management Co., Ltd. | Non-volatile memory cell, non-volatile memory cell array, and method of manufacturing the same |
US10546998B2 (en) | 2013-02-05 | 2020-01-28 | Micron Technology, Inc. | Methods of forming memory and methods of forming vertically-stacked structures |
KR20160022046A (en) * | 2014-08-19 | 2016-02-29 | 에스케이하이닉스 주식회사 | Electronic device |
US10074694B2 (en) * | 2015-07-24 | 2018-09-11 | Toshiba Memory Corporation | Memory device and method for manufacturing the same |
KR102616038B1 (en) * | 2016-08-19 | 2023-12-21 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method of the same |
US10424374B2 (en) | 2017-04-28 | 2019-09-24 | Micron Technology, Inc. | Programming enhancement in self-selecting memory |
KR20190013347A (en) * | 2017-08-01 | 2019-02-11 | 에스케이하이닉스 주식회사 | Semiconductor device and manufacturing method thereof |
US10249683B1 (en) * | 2017-12-15 | 2019-04-02 | Sandisk Technologies Llc | Three-dimensional phase change memory arrays and methods of manufacturing the same |
WO2019118931A1 (en) * | 2017-12-16 | 2019-06-20 | Hsu Fu Chang | 3d vertical memory array cell structures with individual selectors and processes |
KR102512794B1 (en) * | 2018-01-17 | 2023-03-23 | 에스케이하이닉스 주식회사 | Electronic device |
US10797107B2 (en) * | 2018-02-27 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory device including phase change material layers and method for manufacturing thereof |
JP2019169591A (en) * | 2018-03-23 | 2019-10-03 | 東芝メモリ株式会社 | Semiconductor storage device |
US10381559B1 (en) * | 2018-06-07 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same |
US10700128B1 (en) * | 2018-12-21 | 2020-06-30 | Micron Technology, Inc. | Three-dimensional memory array |
-
2019
- 2019-12-26 KR KR1020190175654A patent/KR20210083049A/en active IP Right Grant
-
2020
- 2020-06-17 US US16/903,908 patent/US11362139B2/en active Active
- 2020-08-05 CN CN202010776086.2A patent/CN113053945B/en active Active
- 2020-08-11 SG SG10202007641QA patent/SG10202007641QA/en unknown
-
2022
- 2022-05-23 US US17/751,417 patent/US20220285439A1/en not_active Abandoned
-
2023
- 2023-05-15 US US18/317,680 patent/US20230284459A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20210202576A1 (en) | 2021-07-01 |
CN113053945B (en) | 2024-04-30 |
US11362139B2 (en) | 2022-06-14 |
CN113053945A (en) | 2021-06-29 |
US20220285439A1 (en) | 2022-09-08 |
KR20210083049A (en) | 2021-07-06 |
US20230284459A1 (en) | 2023-09-07 |
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