TWI799936B - 半導體裝置及形成半導體裝置之方法 - Google Patents

半導體裝置及形成半導體裝置之方法 Download PDF

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TWI799936B
TWI799936B TW110128990A TW110128990A TWI799936B TW I799936 B TWI799936 B TW I799936B TW 110128990 A TW110128990 A TW 110128990A TW 110128990 A TW110128990 A TW 110128990A TW I799936 B TWI799936 B TW I799936B
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semiconductor device
forming
semiconductor
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TW110128990A
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TW202221794A (zh
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鍾昀晏
鄭兆欽
簡昭欣
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台灣積體電路製造股份有限公司
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
TW110128990A 2020-11-25 2021-08-05 半導體裝置及形成半導體裝置之方法 TWI799936B (zh)

Applications Claiming Priority (6)

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US202063118141P 2020-11-25 2020-11-25
US63/118,141 2020-11-25
US202163134256P 2021-01-06 2021-01-06
US63/134,256 2021-01-06
US17/324,893 US11670720B2 (en) 2020-11-25 2021-05-19 Semiconductor device and method
US17/324,893 2021-05-19

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TW202221794A TW202221794A (zh) 2022-06-01
TWI799936B true TWI799936B (zh) 2023-04-21

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KR (1) KR102597962B1 (zh)
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Publication number Priority date Publication date Assignee Title
WO2023219570A1 (en) * 2022-05-12 2023-11-16 Nanyang Technological University Transistor and method of forming the same
CN115483095A (zh) * 2022-10-17 2022-12-16 珠海创飞芯科技有限公司 一种半导体器件及其制造方法

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US20180114839A1 (en) * 2016-10-25 2018-04-26 National Taiwan University Field effect transistor using transition metal dichalcogenide and a method for manufacturing the same
US20190019894A1 (en) * 2012-04-06 2019-01-17 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device

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