TWI778471B - 氧化鋁燒結體及其製造方法以及半導體製造裝置用零件 - Google Patents

氧化鋁燒結體及其製造方法以及半導體製造裝置用零件 Download PDF

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TWI778471B
TWI778471B TW109144073A TW109144073A TWI778471B TW I778471 B TWI778471 B TW I778471B TW 109144073 A TW109144073 A TW 109144073A TW 109144073 A TW109144073 A TW 109144073A TW I778471 B TWI778471 B TW I778471B
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sintered body
alumina
alumina sintered
tantalum
sodium
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衛藤俊一
福尾長延
齋藤孝
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日商飛羅得材料科技股份有限公司
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Abstract

一種氧化鋁燒結體，使由鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上以氧化物換算為含有0.01～1.0質量百分比。此氧化鋁燒結體，進而含有鎂(Mg)以氧化物換算為含有0.01～1.0質量百分比亦可。此氧化鋁燒結體，特別以氧化鋁純度為99%以上為佳。藉此，可以廉價得到具有與從前技術相比還低的介電損失之氧化鋁燒結體。

Description

氧化鋁燒結體及其製造方法以及半導體製造裝置用零件
本發明係關於氧化鋁燒結體及其製造方法以及半導體製造裝置用零件。
氧化鋁燒結體因為介電損失小，而且具有耐熱性，被用於半導體基板等的蝕刻等半導體製造裝置(電漿處理裝置)之製程真空室的構成零件。
最近，對於電磁波透過性的要求變得嚴格，市場上需求具有進而更低的介電損失之氧化鋁燒結體。
在此，介電損失，例如除了受到材料的結晶粒徑、氣孔率、不純物等的影響以外，特別是受到鹼金屬(尤其是鈉)的強大影響係屬已知。鈉等鹼金屬，與氧化鋁反應的話形成呈現離子導電性的β氧化鋁構造，使tanδ(介電正切)惡化。因此，藉由選擇鈉成分少的原料或是在燒成(firing)工序使鈉成分揮發而謀求減低鈉成分，提高tanδ(參見專利文獻1～專利文獻3等)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開平4-356922號公報 [專利文獻2]日本特開平8-59338號公報 [專利文獻3]日本特開平9-102488號公報
[發明所欲解決之課題]
伴隨著半導體製品的細微化、高密度化，蝕刻條件的精密控制變得有必要。例如，用於製程真空室的構成零件的氧化鋁，要求安定地降低介電損失。對於介電損失的減低，原料的高純度化是有效的。
氧化鋁粉末之製法，已知有烷氧化物(alkoxide)法及拜耳法。烷氧化物法為化學合成，鈉的減低為容易。但是此方法為高成本的製程，限定地利用於一部分的用途。另一方面，拜耳法以鋁土礦為原料，是比較低成本的製程，廣泛使用於泛用原料的製造方法。對於半導體製造裝置之成本降低，必須使氧化鋁零件低成本化，一般使用利用拜耳法之氧化鋁原料。
但是拜耳法於精製工序添加氫氧化鈉，所以容易殘存鈉。鈉例如於燒成工序會揮發、被除去，但隨著製品的厚度、燒成條件(升溫速度、氛圍等)而使效果有所變動，在厚製品的場合，中心部之tanδ有變差的傾向。此外，鈉還可以藉由酸洗等純化處理來去除，但其效果也有限度。
本發明，係以根據拜耳法之製造為前提，目的在於藉由有效果地使氧化鋁燒結體的鈉成分惰性化，廉價得到具有與從前技術相比還低的介電損失之氧化鋁燒結體。 [供解決課題之手段]
本案發明人等，為了達成前述目的而反覆銳意研究，產生了藉由添加與鈉反應的化合物，捕捉(trap)鈉使惰性化，阻礙β氧化鋁構造的形成之念頭。發現了作為與鈉反應的化合物，具體以第5族元素之中特別是鉭(Ta)、鈮(Nb)及釩(V)之添加為有效。這些元素藉由下列反應而使鈉惰性化。
Figure 02_image001
其中，藉由添加鉭(Ta)、鈮(Nb)及釩(V)使得氧化鋁的粒成長變得容易發生，招致強度降低。因此，在特別要求高強度的用途之氧化鋁燒結體的場合，以藉由添加氧化鎂抑制粒成長，抑制強度降低為佳。
本發明係根據前述新知見解而完成之發明，以下述的氧化鋁燒結體及其製造方法以及半導體製造裝置用零件為要旨。
(1)一種氧化鋁燒結體，使由鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上，以氧化物換算為含有0.01～1.0質量百分比。
(2)進而含有鎂(Mg)，以氧化物換算為含有0.01～1.0質量百分比 之前述(1)之氧化鋁燒結體。
(3)氧化鋁純度為99%以上 之前述(1)或(2)之氧化鋁燒結體。
(4)混合氧化鋁，以及由鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的原料粉末，造粒、成形之後，於大氣中在1575～1675℃之溫度進行燒結 之前述(1)～(3)之任一之氧化鋁燒結體之製造方法。
(5)使用了前述(1)～(3)之任一氧化鋁燒結體 之半導體製造裝置用零件。 [發明之效果]
根據本發明，可以有效果地惰性化氧化鋁燒結體的鈉成分，所以可廉價得到具有與從前技術相比還低的介電損失之氧化鋁燒結體。
1.氧化鋁燒結體
相關於本發明之氧化鋁燒結體，使由鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上以氧化物換算為含有0.01～1.0質量百分比。
鉭(Ta)、鈮(Nb)及釩(V)均藉由使鈉以NaMO3 (M：V、Nb、Ta)的型態捕捉而惰性化，所以對於阻礙β氧化鋁構造的形成為有效。因此，使由鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上，以氧化物換算為含有0.01質量百分比以上。另一方面，這些元素的氧化物量過多的話，會產生彎曲強度降低等對於機械特性之不良影響，同時變成無法作為要求高純度的真空室零件來使用，所以上限為以氧化物換算為含有1.0質量百分比。較佳的下限為0.03%，更佳的下限為0.05%，進而更佳的下限為0.1%。此外，較佳的上限為0.8%，更佳的上限為0.5%。
在此，於相關於本發明之氧化鋁燒結體，以頻率13.56MHz之介電正切未滿5×10-4 為評估基準。接著，使由鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的含量增加的話，可以使介電正切更為降低。亦即，以氧化物換算含有0.05%以上的話，可以使頻率13.56MHz之介電正切為未滿2×10-4 ，以氧化物換算含有0.1%以上的話，可以使頻率13.56MHz之介電正切為未滿1×10-4 。
於相關於本發明的氧化鋁燒結體，鈉以NaMO3 (M：V、Nb、Ta)的型態被捕捉，所以殘存為氧化物(Na2 O)的量變得極少。又，第5族元素固溶於氧化鋁，所以應該也有一部分是包含結晶構造改變導致的影響。
相關於本發明之氧化鋁燒結體，進而含鎂(Mg)，以氧化物換算為含有0.01～1.0質量百分比為佳。這是因為藉由添加鉭(Ta)、鈮(Nb)及釩(V)使得氧化鋁的粒成長變得容易發生，招致強度降低。因此，在特別要求高強度的用途之氧化鋁燒結體的場合，以藉由添加氧化鎂抑制粒成長，抑制強度降低為佳。特別是為了使三點彎曲強度為250MPa以上，使含鎂(Mg)以氧化物換算為含有0.01質量百分比以上亦可。另一方面，鎂通常固溶於氧化鋁，或是作為與氧化鋁之反應物而存在於燒結體中，但是以氧化鎂之單獨粒子過剩地存在於燒結體中的話，彼等會凝集成為破壞起點，由研削/研磨面脫粒而使表面性狀惡化。因此，上限以氧化物換算為1.0質量百分比。較佳的下限為0.03%，更佳的下限為0.05%，進而更佳的下限為0.1%。此外，較佳的上限為0.8%，更佳的上限為0.5%。
又，特別是為了使三點彎曲強度為320MPa以上，使含鎂(Mg)以氧化物換算為含有0.1質量百分比以上亦可。
氧化鋁中的鈉氧化物量，可以藉由GDMS等元素分析來測定，但是要區別以Na2 O之形態存在的氧化物量與以NaMO3 (M：V、Nb、Ta)之形態存在的氧化物量是困難的。這一點對於鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的氧化物量(進而包括鎂氧化物量)也是相同的。但是，存在於氧化鋁中的鈉氧化物量增加的場合，使鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的氧化物量(進而包含鎂氧化物量)相對增加的話，可以減少活性的鈉，亦即使殘存為氧化物(Na2 O)之量漸少，變成可以阻礙β氧化鋁構造的形成。
在此，以使鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上，以氧化物換算為含有0.01%以上的話，只要氧化鋁中的鈉量不是極端地多(例如合計氧化物量為未滿0.0014%)，就可以充分地減低以Na2 O的形態存在的氧化物量。以配合鈉量的增加也使鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的氧化物量相對增加為佳。本案發明人等，確認了即使鈉的合計氧化物量增加到0.01%的場合，藉由使鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上之氧化物量在0.01～1.0質量百分比的範圍內增加，可以阻礙β氧化鋁構造的形成。特別是包含於氧化鋁燒結體中的鈉氧化物之量為OXNa (質量%)，氧化鋁燒結體中所含的鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的氧化物量為OX0 (質量%)時，OXNa /OX0 之值為0.20以下為較佳。OXNa /OX0 之值為0.15以下更佳。
相關於本發明之氧化鋁燒結體以氧化鋁純度為99.0%以上為佳。氧化鋁純度即使未滿99.0%，也可以維持低介電損失的效果，但強度降低。因此，在特別要求強度的用途之氧化鋁燒結體的場合，以使氧化鋁純度為99.0%以上為佳。更佳之純度為99.3%以上，更佳之純度為99.5%以上。
又，於相關於本發明的氧化鋁燒結體，鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的氧化物(進而包含鎂氧化物)以及鈉氧化物以外的其餘部分，實質為氧化鋁為較佳。除此以外的成分元素，為Si、K、Ca、Ti、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Zr、Sn、Ba、W等，以固溶狀態或氧化物等的化合物的狀態微量含有。相關於本發明的氧化鋁燒結體，由這些元素選擇的一種以上之合計含量(固溶元素的場合為該元素的含量，氧化物的場合為氧化物換算之含量)容許到0.5%為止。亦即，由這些元素選擇的一種以上之合計含量為0～0.5%。合計含量的上限，以0.15%為佳，0.09%更佳，0.07%又更佳，0.05%又更佳。
2.氧化鋁燒結體之製造方法 以下，說明關於本發明之氧化鋁燒結體的製造方法之例。
作為相關於本發明的氧化鋁燒結體的原料，使用在拜耳法等通常方法製造的泛用原料之氧化鋁粉末。此外，作為鉭(Ta)、鈮(Nb)及釩(V)之原料，例如使用這些的氧化物、硝酸鹽等之粉末。鎂的原料，也可以使用氧化物或種種化合物。把這些粉末以球磨機等公知的方法混合。亦即，在容器內與各粉末一起，與水、分散劑、樹脂、陶瓷製的球粒一起混合，泥漿化。
把得到的泥漿，以噴霧乾燥等公知的方法造粒。亦即，對泥漿加入有機結合劑以噴霧乾燥機噴霧乾燥做成顆粒狀。
所得到的顆粒藉由CIP(冷均壓)成形等公知的方法來成形。亦即，把得到的顆粒充填於橡膠模具，在水中加壓。此時，藉由有機結合劑的接著力可形成一次成形體。
把得到的一次成形體藉由粗加工(綠加工)，成形為接近於最終製品形狀的形狀，可以形成二次成形體。又，一次成形體或二次成形體，也可以利用根據刮刀之板材成形(膠帶成形)、鑄造成形等。
把前述二次成形體藉由大氣爐燒成。此時，燒結溫度太低的話，不會進行緻密化而殘留氣孔，變得密度不足，所以燒結溫度為1575℃以上。另一方面，燒結溫度太高的話，氧化鋁粒子的成長過度進行而增大破壞源的尺寸，引起強度降低，所以燒結溫度為1675℃以下。燒結時間只要隨著二次成形體的尺寸而設定即可，可為60～600分鐘。 [實施例1]
未確認本發明之效果，把以拜耳法等通常方法製造的泛用原料之氧化鋁粉末，與特定的粉末原料，與水、分散劑、樹脂、陶瓷製的球粒一起混合，對得到的泥漿加入有機結合劑，以噴霧乾燥機噴霧乾燥做成顆粒狀。所得到的顆粒充填到橡膠模具，在水中加壓，藉由CIP(冷均壓)成形得到的成形體在1600～1650℃之溫度加熱，得到縱150mm×橫150mm×厚30mm之試驗用燒結體。
由所得到的燒結體採取試驗片，進行各種試驗。
＜介電正切(tanδ)＞ 由燒結體採取試驗片，於厚度方向，從表面附近、中央部及背面附近之三處採取試樣，依照日本工業標準JIS C2138，求頻率13.56MHz的介電正切，此外依據JIS R1641求頻率10GHz之介電正切。
＜密度＞ 依照JIS R1634求出前述試驗用燒結體的密度。
＜彎曲強度＞ 依照JIS R1601求出前述試驗用燒結體的三點彎曲強度。
＜元素分析＞ 前述試驗用燒結體的元素分析，針對鉭(Ta)及鈉採用ICP法，其他元素藉由GDMS法進行，測定了分別的元素之以氧化物換算之含量。
＜構成相之驗證＞ 針對部分試驗用燒結體(實施例1及比較例1)，使用X線繞射裝置(Bruker 公司製造)進行了構成相的驗證。例如，鉭(Ta)與鈉的反應可以藉由XRD檢驗出。亦即，NaTaO3 之(020)面2θ=22.5～23.5°，(200)面2θ=32～33°。實施例1及比較例1之X線繞射測定結果顯示於圖1及圖2。
Figure 02_image003
如表1所示，在不含鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上的比較例1，頻率13.56MHz之介電正切超過5×10-4 。另一方面，使鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上，以氧化物換算含有0.01～1.0質量百分比的實施例1～17，頻率13.56MHz之介電正切都在未滿5×10-4 之良好範圍。
如圖1所示，在實施例1之X線繞射結果，由在NaTaO3 的(020)面2θ之22.5～23.5°，與(200)面2θ之32～33°的位置，出現了比較例1的X線繞射結果(圖2)所沒有的峰，可知生成了Ta-Na-O化合物。亦即，可知於實施例1，藉由鉭(Ta)以NaTaO3 的形態捕獲鈉，實現了低介電損失。 [產業上利用可能性]
根據本發明，可以有效果地惰性化氧化鋁燒結體的鈉成分，所以可廉價得到具有與從前技術相比還低的介電損失之氧化鋁燒結體。本發明之氧化鋁燒結體，適合用於半導體基板等的蝕刻等半導體製造裝置(電漿處理裝置)之製程真空室的構成零件等半導體製造裝置用零件。
[圖1]係顯示實施例1的氧化鋁燒結體之X線繞射結果之圖。 [圖2]係顯示比較例1的氧化鋁燒結體之X線繞射結果之圖。

Claims (3)

  1. 一種氧化鋁燒結體，其特徵為 以氧化物換算為含有：由鉭(Ta)、鈮(Nb)及釩(V)所選擇之一種以上0.01～1.0質量百分比(質量%)之半導體製造裝置之製程真空室用的氧化鋁燒結體。
  2. 如請求項1之氧化鋁燒結體，其中 含有NaMO3 (M：鉭(Ta)、鈮(Nb)或釩(V)）。
  3. 如請求項1或2之氧化鋁燒結體，其中 頻率13.56MHz之介電正切未滿5×10-4 。
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Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH07237965A (ja) * 1994-02-28 1995-09-12 Kyocera Corp セラミックス製ガイド部材及びその製造方法
TW201236990A (en) * 2011-03-11 2012-09-16 Saint Gobain Ceramics Refractory object, glass overflow forming block, and process for glass object manufacture
JP2015125896A (ja) * 2013-12-26 2015-07-06 京セラ株式会社 アルミナ質焼結体およびこれを備える静電偏向器

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP3029488B2 (ja) 1991-05-16 2000-04-04 東芝セラミックス株式会社 プラズマ放電部材
JP3036367B2 (ja) 1994-08-19 2000-04-24 住友金属工業株式会社 アルミナ磁器組成物
JP3102318B2 (ja) 1995-10-06 2000-10-23 住友金属工業株式会社 アルミナ製マイクロ波導入窓の製造方法
JP2001072462A (ja) * 1999-06-29 2001-03-21 Hitachi Metals Ltd アルミナ磁器組成物
JP2003112963A (ja) * 2001-09-28 2003-04-18 Ngk Spark Plug Co Ltd アルミナ焼結体およびその製造方法
US20070298245A1 (en) 2006-06-23 2007-12-27 Denso Corporation Alumina composite sintered body, evaluation method thereof and spark plug
JP5361141B2 (ja) * 2007-04-24 2013-12-04 京セラ株式会社 プラズマ処理装置用部材およびこれを用いたプラズマ処理装置
JP5775544B2 (ja) 2013-05-09 2015-09-09 日本特殊陶業株式会社 点火プラグ用絶縁体及び点火プラグ
JP6352686B2 (ja) * 2014-01-30 2018-07-04 京セラ株式会社 アルミナ質焼結体および半導体製造装置用部材ならびに液晶パネル製造装置用部材
TWI705951B (zh) * 2015-09-30 2020-10-01 日商日本碍子股份有限公司 透明氧化鋁燒結體的製法
WO2019131644A1 (ja) * 2017-12-27 2019-07-04 昭和電工株式会社 アルミナ焼結体の前駆体、アルミナ焼結体の製造方法、砥粒の製造方法及びアルミナ焼結体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07237965A (ja) * 1994-02-28 1995-09-12 Kyocera Corp セラミックス製ガイド部材及びその製造方法
TW201236990A (en) * 2011-03-11 2012-09-16 Saint Gobain Ceramics Refractory object, glass overflow forming block, and process for glass object manufacture
JP2015125896A (ja) * 2013-12-26 2015-07-06 京セラ株式会社 アルミナ質焼結体およびこれを備える静電偏向器

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