TWI711151B - 微型黏合結構和其形成方法 - Google Patents

微型黏合結構和其形成方法 Download PDF

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TWI711151B
TWI711151B TW108124375A TW108124375A TWI711151B TW I711151 B TWI711151 B TW I711151B TW 108124375 A TW108124375 A TW 108124375A TW 108124375 A TW108124375 A TW 108124375A TW I711151 B TWI711151 B TW I711151B
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Taiwan
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conductive pad
micro
layer
adhesive layer
bonding
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TW108124375A
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TW202008557A (zh
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陳立宜
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薩摩亞商美科米尚技術有限公司
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Priority claimed from US16/043,147 external-priority patent/US10347602B1/en
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Abstract

本揭露提供一種微型黏合結構，包含基板、導電墊、黏合層、微型元件和擴散黏合部分。導電墊設置在基板上。黏合層位於導電墊上。微型元件位於黏合層上。擴散黏合部分位於黏合層和導電墊之間並電性連接黏合層和導電墊。擴散黏合部分是由黏合層的至少一部分元素和導電墊的至少一部分元素所組成。複數個空穴位於黏合層和導電墊之間，這些空穴的其中一個是由擴散黏合部分以及導電墊和黏合層當中的至少一個所界定。

Description

微型黏合結構和其形成方法
本揭露是有關於微型黏合結構和形成微型黏合結構的分法。
此處的陳述僅提供與本揭露有關的背景信息，而不必然地構成現有技術。
近年來，微型元件在各類應用中逐漸蓬勃發展。在關於微型元件的所有科技方面，轉移過程對於微型元件商品化而言是其中一個最具挑戰性的工作。轉移過程的其中一個重要議題為將黏合微型元件黏合至基板上。
本揭露的一些實施例提出一種微型黏合結構，微型黏合結構包含基板、導電墊、黏合層、微型元件和擴散黏合部分。根據本揭露的一些實施例，微型黏合結構包含基板、導電墊、黏合層、微型元件和擴散黏合部分。導電墊設置在基板上。黏合層位於導電墊上。微型元件位於黏合層上。擴散黏合部分位於黏合層和導電墊之間並電性連接黏合層和導電墊。擴散黏合部分是由黏合層的至少一部分元素和導電墊的至少一 部分元素所組成。複數個空穴位於黏合層和導電墊之間，這些空穴的其中一個是由擴散黏合部分以及導電墊和黏合層當中的至少一個所界定。
本揭露的另一些實施例提出一種形成微型黏合結構的方法。此方法包含：形成黏合層於微型元件上；準備具有導電墊於其上的基板；形成液體層於導電墊上；放置微型元件至基板上方並使微型元件接觸液體層；以及加熱黏合層和導電墊當中的至少一個至低於熔點溫度，此熔點溫度為黏合層和導電墊當中熔點較低者，加熱速率小於或等於每分鐘12攝氏度以逐漸蒸發液體層，使得黏合層接觸導電墊並在黏合層和導電墊之間形成複數個空穴，且間隙擴散發生在黏合層和導電墊之間以形成擴散黏合部分。
為了讓本揭露的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
100‧‧‧微型黏合結構
110‧‧‧基板
112‧‧‧填充材料
120‧‧‧導電墊
130‧‧‧黏合層
140‧‧‧微型元件
142‧‧‧第一型半導體層
144‧‧‧第二型半導體層
146‧‧‧主動層
150‧‧‧擴散黏合部分
1502‧‧‧第一部分
1504‧‧‧第二部分
160‧‧‧空穴
170‧‧‧第一黏著層
180‧‧‧第二黏著層
190‧‧‧電極
200‧‧‧黏合微型元件至基板的方法
210、220、230、240、250‧‧‧作業
510‧‧‧液體層
B‧‧‧微型黏合部分
L‧‧‧垂直長度
L1‧‧‧側向長度
H、H1、H2‧‧‧高度
T‧‧‧加熱步驟
G‧‧‧還原氣體
P‧‧‧外部壓力
當結合隨附圖式閱讀時，自以下詳細描述將最佳地理解本揭露之態樣。應注意，根據工業中之標準實務，各特徵未必依比例繪示。實際上，可出於論述清晰之目的而增減所說明的特徵之尺寸。
第1圖繪示本揭露的一些實施例中微型黏合結構的剖面示意圖。
第2A圖繪示本揭露的一些實施例中第1圖所示之一部分的微型黏合部分的放大剖面示意圖。
第2B圖繪示本揭露的一些實施例中第1圖所示之一部分 的微型黏合部分的放大剖面示意圖。
第2C繪示本揭露的一些實施例中第1圖所示之一部分的微型黏合部分的放大剖面示意圖。
第3A圖繪示根據本揭露的一些實施例中聚焦在一個微型元件和一部分該微型元件黏合於其上的基板的放大剖面示意圖。
第3B圖繪示根據本揭露的一些實施例中聚焦在一個微型元件和一部分該微型元件黏合於其上的基板的放大剖面示意圖。
第4圖繪示根據本揭露的一些實施例中黏合微型元件至基板的方法的流程示意圖。
第5A圖繪示根據本揭露的一些實施例中第4圖的方法其中一個中間步驟的剖面示意圖。
第5B圖繪示根據本揭露的一些實施例中第4圖的方法其中一個中間步驟的剖面示意圖。
第5C圖繪示根據本揭露的一些實施例中第4圖的方法其中一個中間步驟的剖面示意圖。
第5D圖繪示根據本揭露的一些實施例中的方法中可選之中間步驟的剖面示意圖。
為更進一步闡述本揭露為達成預定揭露目的所採取的技術手段及功效，以下結合附圖及較佳實施例，對依據本揭露提出的微型黏合結構和其形成方法，其具體實施方式、結構、方法、步驟、特徵及其功效，詳細說明如後。
有關本揭露的前述及其他技術內容、特點及功效，在以下配合參考附圖的較佳實施例的詳細說明中將可清楚呈現。通過具體實施方式的說明，當可對本揭露為達成預定目的所採取的技術手段及功效更加深入且具體的瞭解，然而所附附圖僅是提供參考與說明之用，並非用來對本揭露加以限制。
為簡化附圖，一些現有已知慣用的結構與元件在附圖中將以簡單示意的方式繪示。並且，除非有其他表示，在不同附圖中相同的元件符號可視為相對應的元件。這些附圖的繪示是為了清楚表達這些實施方式中各元件之間的連接關係，並非繪示各元件的實際尺寸。
在一方面，本揭露的實施例提供一種微型黏合結構100。雖然在以下的公開內容中描述的大多數元件名稱是使用單數名詞，但是根據附圖或實際應用，這些元件名稱也可以是複數。請參考第1圖和第2A圖至第2C圖。第1圖為本揭露的一些實施例中微型黏合結構100的剖面示意圖。第2A圖為本揭露的一些實施例中第1圖所示之一部分的微型黏合部分B的放大剖面示意圖。第2B圖為本揭露的一些實施例中第1圖所示之一部分的微型黏合部分B的放大剖面示意圖。第2C圖為本揭露的一些實施例中第1圖所示之一部分的微型黏合部分B的放大剖面示意圖。在一些實施例中，微型黏合結構100包含基板110、導電墊120、黏合層130、微型元件140和擴散黏合部分150。導電墊120設置在基板110上。黏合層130位於導電墊120上。微型元件140位於黏合層130上。擴散黏合部分150位於黏合層130和導電墊120之間並電性連接黏合層130和導電墊120。
在一些實施例中，導電墊120和黏合層130的其中之一包含銅(copper,Cu)、錫(tin,Sn)、鈦(titanium,Ti)和銦(indium,In)當中的一個，且前述銅、錫、鈦和銦當中的一個佔前述導電墊120和黏合層130的其中之一的半數以上之原子數目。在一些實施例中，導電墊120包含貴金屬，且貴金屬佔導電墊120半數以上之原子數目。貴金屬可包含銅，但並不限於此。其它貴金屬亦在本揭露的範圍內，像是釕(ruthenium,Ru)、銠(rhodium,Rh)、鈀(palladium,Pd)、銀(silver,Ag)、鉑(platinum,Pt)和金(gold,Au)。在一些實施例中，導電墊120包含鎳(nickel,Ni)。在一些實施例中，導電墊120包含銅和鎳的組合，銅佔了導電墊120半數以上之原子數目。選擇導電墊120的主要材料之方法可為判斷該待選材料(例如，銅)擴散至黏合層130中的另一材料的擴散係數於攝氏190度下是否大於或等於數量級10-13(m2/s)，但選材方法並不以此為限。
在一些實施例中，黏合層130包含焊料，且焊料佔了黏合層130半數以上之原子數目。焊料可包含錫、鉛(lead,Pb)、鉍(bismuth,Bi)、錫和鉛的組合、錫和鉍的組合、鉍和鉛的組合以及錫、鉍和鉛的組合，但不以此為限。在一些實施例中，錫佔了黏合層130半數以上之原子數目。在一些實施例中，導電墊120和黏合層130兩者其中之一的表面粗糙度小於或等於80奈米。在一些實施例中，從導電墊120擴散至黏合層130的擴散係數大於從黏合層130擴散至導電墊120的擴散係數，使得從導電墊120擴散至黏合層130的原子多於從黏合層130擴散至導電墊120的原子。舉例而言，在攝氏190度下從銅擴散到錫的擴散係數為4.49 x 10-11(m2/s)，而在攝氏190度下從錫擴散到銅的擴散係數為3.10 x 10-25(m2/s)(參閱例如，Table I of Z.Mei,A.J.Sunwoo and J.W.Morris,Jr.,Metall.Trans.A 23A,857(1992))。因此， 銅較能趨向於透過間隙擴散而擴散至錫中。雖然間隙擴散可以是銅擴散至錫的主要機制，亦可有其它擴散機制發生，例如空位擴散。舉例而言，錫擴散進入銅的空缺，但不以此為限。其中銅的空缺是由於前述的間隙擴散所造成的。
第1圖中一部分的微型黏合部分B的放大視圖顯示於第2A圖、第2B圖和第2C圖中。擴散黏合部分150位於黏合層130和導電墊120之間並電性連接黏合層130和導電墊120。擴散黏合部分150是由黏合層130的至少一部分元素和導電墊120的至少一部分元素所組成。複數個空穴160位於黏合層130和導電墊120之間，其中一個空穴160是由擴散黏合部分150以及導電墊120和黏合層130當中的至少一個所界定。
在一些實施例中，擴散黏合部分150具有第一部分1502和第二部分1504，分別與導電墊120和黏合層130接觸。在一些實施例中，第二部分1504的體積大於第一部分1502的體積。在一些實施例中，第二部分1504的體積等於第一部分1502的體積。在一些實施例中，第二部分1504的體積小於第一部分1502的體積。第一部分1502和第二部分1504的不同體積可能是由於從導電墊120擴散至黏合層130以及從黏合層130擴散至導電墊120的不同擴散係數所造成，但不以此為限。
在一些實施例中，空穴160是由擴散黏合部分150的周邊之一部分、導電墊120面對黏合層130的周邊之一部分和黏合層130面對導電墊120的周邊之一部分所界定(例如，參考第2A圖)。在一些實施例中，至少其中一個空穴160是由擴散黏合部分150的周邊之一部分和導電墊120的周邊之一部分所界定，但並未直接由黏合層130的周邊之一部分所界定(例如，參考第2B圖)。在一些實施例中，至少一個空穴160是由擴散黏合部分150的周邊之一部分和黏合層130的周邊之 一部分所界定，但並未直接由導電墊120的周邊之一部分所界定(例如，參考第2C圖)。第2A圖、第2B圖和第2C圖所描述的實施例之不同點可能是來自加熱過程、加熱過程終端溫度或所選材料之擴散係數不同，但不以此為限。在一些實施例中，其中一個空穴160的垂直長度L小於或等於200奈米。第2A圖至第2C圖中所示之垂直長度L的定義是其中一個空穴160在巨觀下(如第1圖的尺度)垂直於導電墊120接觸黏合層130之表面的延伸方向上的長度。在一些實施例中，於此段落和前兩個段落所描述的結構特徵可以用下述方式形成。首先，形成液體層於導電墊120上並使黏合層130接觸液體層。接著，加熱導電墊120和黏合層130當中至少一個至低於錫熔點的溫度讓液體層蒸發同時避免錫熔化。液體層蒸發後，黏合層130貼附並電性接觸導電墊120，從而形成前述結構特徵。前述加熱的詳細方法和參數將於後詳述。
在一些實施例中，導電墊120的厚度小於或等於2微米。在一些實施例中，導電墊120的厚度小於或等於0.5微米。在一些實施例中，黏合層130的厚度小於或等於10微米。在一些實施例中，黏合層130的厚度範圍在約0.2微米至約2微米之間。在一些實施例中，黏合層130的厚度範圍在約0.3微米至約1微米之間。導電墊120和黏合層130的最低限制厚度考量是為了確保存在足夠的空間讓焊料和貴金屬(和/或鎳)之間可以有間隙擴散。此處所指的厚度是指部件(例如，黏合層130或導電墊120)的最大長度，此長度的方式是垂直於前述剖面圖中基板110的延伸方向。此外，黏合層130應該足夠薄(亦即，小於2微米，優選小於1微米)以降低其熱傳導，從而讓微型黏合結構100展現更佳的熱散逸。除此之外，亦有足夠的能力以抵抗施加至黏合層130或微型黏合結構100的剪力以避免微型黏合結構100受到損壞。再者，由於黏合層130的厚度相較於傳統用來黏合的層(例如，相較於傳統焊 接用來黏合的層)薄得多，黏合層130的電阻顯著減少，從而可降低黏合於黏合層130上之微型元件140於操作時的能量消耗。
請參考第3A圖和第3B圖。第3A圖為根據本揭露的一些實施例中聚焦在一個微型元件140和一部分該微型元件140黏合於其上的基板110的放大剖面示意圖。微型元件140可包含第一型半導體層142、第二型半導體層144和主動層146。第二型半導體層144位於第一型半導體層142上，主動層146位於第一型半導體層142和第二型半導體層144之間並接觸第一型半導體層142和第二型半導體層144。第一和第二型半導體層142、144可分別為p型和n型半導體層，主動層146可以為量子井或多重量子井，但並不以此為限。在一些實施例中，第一型半導體層142(例如p型半導體層)比第二型半導體層144(例如，n型半導體層)要來得薄。微型元件140的第一型半導體層142面對基板110。在此條件下，如第3A圖中所示之可選地填充材料112(例如，介電材料)的厚度可具有較大範圍的公差，此填充材料112填充空的地方並暴露第二型半導體層144的至少一部分。前述可具有較大範圍厚度公差的原因在於填充材料112的其中一個功能為防止第一型半導體層142和第二型半導體層144之間電流短路。因此，如第3A圖所示，填充材料112相對於基板110的高度H可大於主動層146相對於基板110的高度H1，但小於微型元件140相對於基板110的高度H2。於是，此配置(微型元件140的第一型半導體層142面對基板110，亦即，p型面朝下)允許了較大範圍的高度H容忍量。詳細而言，填充材料112在基板110上並接觸導電墊120、黏合層130和微型元件140。除此之外，由於p型半導體層的載子濃度低於n型半導體層的載子濃度，較薄的p型半導體層可增強微型元件140(例如，微型發光二極管)的效率。在一些實施例中，如第3A圖所示，微型元件140相對於基板110的高度H2小於微型元件140 側向長度L1，從而更加增強了抵抗由於施加至微型黏合結構100的剪力而造成損壞的能力。一般來說，微型元件140的側向長度L1是從垂直於高度H2的方向量測。
在一些實施例中，微型元件140的側向長度L1等於或小於50微米。在一些實施例中，微型元件140的側向長度L1等於或小於20微米。此處所描述的側向長度L1為微型元件140平行於如第1圖、第3A圖和第3B圖所示的側視(剖面)圖的基板110延伸方向的最大長度。在一些實施例中，導電墊120和黏合層130接觸的面積小於或等於2500平方微米，例如，50微米乘以50微米的方形區域，但不以此為限。由於黏合層130和導電墊120之間的黏合主要是由焊料和貴金屬(在此的定義包括銅)(和/或鎳)之間的間隙擴散，在低於錫熔點的溫度下完成，由於焊料(例如，錫)沒有熔化，因此基板110上微型元件140的定位精度不會變差。此外，由於前述溫度低於傳統的黏合溫度，微型元件140和其它位於基板110上的部件(例如，電路)的品質在黏合後得以維持。
應注意，前述借液體層協助之間隙擴散在尺寸(側向長度和/或厚度)小於約50微米的微型元件140以黏合為目的時效果良好。在其它元件尺寸遠大於50微米(例如，100微米)的情形，由於液體層的毛細力無法將元件維持在可控區域內，應使用傳統焊接(例如，熔化錫)來黏合，且前述的間隙擴散可能無法將黏合層和元件牢固地黏合至導電墊上。
在一些實施例中，微型黏合結構100更包含第一黏著層170，設置在導電墊120和基板110之間。第一黏著層170可能包含鈦(titanium,Ti)、鈦鎢(titanium tungsten,TiW)、鉻(chromium,Cr)、鉬(molybdenum,Mo)、鉬鈦(molybdenum titanium,MoTi)、或其 組合，但不以此為限。在一些實施例中，微型黏合結構100更包含第二黏著層180，設置在微型元件140和黏合層130之間。第二黏著層180包含鈦、鈦鎢、鉻、鎳、鎳鉻(nickel chromium,NiCr)、銅、鉬、鉬鈦或其組合，但不以此為限。第一和第二黏著層170、180可提升導電墊120和基板110之間以及微型元件140和黏合層130之間的黏合品質，從而防止微型黏合結構100在其形成的製程中或之後產生分離的情形。
在一些實施例中，微型黏合結構100更包含至少一個電極190，設置在黏合層130(或第二黏著層180)和微型元件140之間，用於微型元件140和導電墊120之間的電性接觸。電極190可包含金、銀、鉑、鉻/金、鉑/金、鈦/鉑/金、鈦/金、鎳/金-鋅(zinc,Zn)、鎳/金、鎳/矽(sislicon,Si)、鎳/鉻/金、鈀/金或鎢化矽(tungsten silicon,WSi)，但不以此為限。
第3B圖為根據本揭露的一些實施例中聚焦在一個微型元件140和一部分該微型元件140黏合於其上的基板110的放大剖面示意圖。第3A圖和第3B圖所描述的實施例的不同點在於，第3B圖的實施例中黏合層130為圖案化黏合層，其包含至少兩個隔離部分(例如，第3B圖所示的左右兩個黏合層130)，隔離部分彼此電性隔離。此外，如第3B圖所示，第二黏著層180、電極190、導電墊120和第一黏著層170亦可分別具有至少兩個隔離部分。
在另一方面，提供形成微型黏合結構100的方法200。雖然在以下的公開內容中描述的大多數元件名稱是使用單數名詞，但是根據附圖或實際應用，這些元件名稱也可以是複數。應當注意，前幾段所描述的關於微型黏合結構100之組成部分和元件名稱可應用至以下關於方法200的實施例，且為了簡單起見，這裡將不再重複其中的一些實施例。
參考第1圖至第5C圖。第4圖為根據本揭露的一些實施例中黏合微型元件140至基板110的方法200的流程示意圖。第5A圖至第5C圖皆各為根據本揭露的一些實施例中圖4的方法200其中一個中間步驟的剖面示意圖。方法200從作業210開始，形成黏合層130於微型元件140上。在一些實施例中，黏合層130的厚度小於或等於10微米。在一些實施例中，黏合層130的厚度介於0.2微米和2微米之間，在一些實施例中優選介於於0.3微米和1微米之間。方法200接著進行作業220，準備基板110，基板110具有導電墊120於其上(例如，參考第5A圖)。方法200接著進行作業230，形成液體層510於導電墊120上(例如，參考第5A圖)。方法200接著進行作業240，放置微型元件140至基板110上方並使微型元件140接觸液體層510(例如，參考第5B圖)。方法200接著進行作業250，加熱黏合層130和導電墊120當中的至少一個(如第5C圖的加熱步驟T所示)至低於熔點溫度，此熔點溫度為黏合層130和導電墊120當中熔點較低者，加熱速率小於或等於每分鐘12攝氏度以逐漸蒸發液體層510(例如，參考第5C圖)。
請參考第5A圖和第5B圖。形成液體層510於導電墊120上。在形成黏合層130於微型元件140上以及準備導電墊120於基板110上之後，放置微型元件140至基板110上方，微型元件140接觸液體層510，使得微型元件140由液體層510所產生的毛細力抓住，並基本保持在基板110上的可控區域內的位置。在一些實施例中，黏合層130可由化學鍍、電鍍、濺鍍、熱蒸鍍或電子槍蒸鍍來形成。在一些實施例中，形成第一黏著層170於基板110上，接著形成導電墊120於第一黏著層170上。在一些實施例中，微型元件140上備有至少一個電極190，黏合層130形成於電極190上。在一些實施例中，形成第二黏著層180於電極190上，接著形成黏合層130於第二黏著層180上。第一和第二黏著層 170、180可包含鈦、鈦鎢，但不以此為限。
請參考第5C圖。加熱黏合層130和/或導電墊120(如第5C圖的加熱步驟T所示)至低於熔點溫度，此熔點溫度為黏合層130和導電墊120當中熔點較低者，加熱速率小於或等於每分鐘12攝氏度以逐漸蒸發液體層510，使得黏合層130接觸導電墊120並藉由黏合層130的粗糙度和導電墊120的粗糙度在黏合層130和導電墊120之間形成複數個空穴160。前述加熱可驅走液體層510，從而在黏合層130和導電墊120之間可發生固相擴散。在一些實施例中，加熱速率小於或等於每分鐘10.33攝氏度。前述加熱速率是根據保持微型元件140在可控區域內的可行性所決定。加熱速率需足夠慢，否則導電墊120和黏合層130之間的接觸將由於液體層510的快速蒸發而分開。在前述加熱步驟T過程中，在黏合層130和導電墊120之間發生間隙擴散以形成擴散黏合部分150。在一些實施例中，擴散黏合部分150形成於有還原氣體G(例如，氫氣(hydrogen,H2))的環境中，從而避免氧化。前述溫度(亦即，終端溫度)可小於或等於攝氏200度。在一些實施例中，前述溫度約為攝氏180度。在一些實施例中，由於從貴金屬(例如，銅)擴散至焊料(例如，錫)的擴散係數大於從焊料(例如，錫)擴散至貴金屬(例如，銅)的擴散係數，間隙擴散主要是由導電墊120的貴金屬(和/或鎳)擴散進黏合層130的焊料中。通過前述的加熱速率(例如，每分鐘10.33攝氏度)以及溫度(例如，攝氏180度)，導電墊120和黏合層130在其兩者間的界面處於前述間隙擴散時不熔化。因此，導電墊120和黏合層130在接觸時所形成的空穴160不會在加熱步驟T中被填滿。如此，前述加熱步驟T可提供厚度遠遠薄於已知製程的擴散黏合部分150。該已知製程是指用熔化材料的方式形成共晶黏合層在彼此接觸之兩個層的界面上。貴金屬和焊料可包含的材料已分別在前面提過，不會再行 重複。
請參考第5D圖。第5D圖為根據本揭露的一些實施例中的方法200中可選之中間步驟的剖面示意圖。在一些實施例中，於蒸發後，施加外部壓力P至導電墊120和黏合層130。詳細而言，在1大氣壓(atm)的環境下，可施加大於大氣壓力約1/4大氣壓的外部壓力P，使得導電墊120和黏合層130受到大於5/4大氣壓的壓縮壓力，增強了導電墊120和黏合層130之間的黏合強度。此外，外部壓力P可增加導電墊120和黏合層130之間的擴散速率。在一些實施例中，可變化環境壓力來施加外部壓力P，例如改變包含微型黏合結構100在內之腔體的壓力。在一些實施例中，可通過額外放置在微型元件140上的平板施加外部壓力P。
綜上所述，本揭露的實施例提供了微型黏合結構以及在低於焊料熔點的溫度下將微型元件黏合至基板的方法，其中微型元件具有相較於傳統元件(例如，傳統LED晶粒)相當微小的側向長度(例如，小於或等於50微米)。由於適當的加熱速率和加熱終端溫度，空穴在導電墊和黏合層的界面上有特殊特徵。如此，可形成固相黏合，且微型元件和相關電路的品質在黏合後仍可維持。
以上所述，僅是本揭露的較佳實施例而已，並非對本揭露作任何形式上的限制，雖然本揭露已以較佳實施例公開如上，然而並非用以限定本揭露，任何熟悉本專業的技術人員，在不脫離本揭露技術方案範圍內，當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本揭露技術方案的內容，依據本揭露的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾，均仍屬於本揭露技術方案的範圍內。
120‧‧‧導電墊
130‧‧‧黏合層
150‧‧‧擴散黏合部分
1502‧‧‧第一部分
1504‧‧‧第二部分
160‧‧‧空穴
B‧‧‧微型黏合部分
L‧‧‧垂直長度

Claims (19)

  1. 一種微型黏合結構，包含：一基板；一導電墊，設置在該基板上；一黏合層，位於該導電墊上；一微型元件，位於該黏合層上；以及一擴散黏合部分，位於該黏合層和該導電墊之間並電性連接該黏合層和該導電墊，其中該擴散黏合部分是由該黏合層的至少一部分元素和該導電墊的至少一部分元素所組成，複數個空穴位於該黏合層和該導電墊之間，該些空穴的其中一個是由該擴散黏合部分以及該導電墊和該黏合層當中的至少一個所界定，且該導電墊和該黏合層其中之一的表面粗糙度小於或等於80奈米。
  2. 如請求項1所述的微型黏合結構，其中該擴散黏合部分是由加熱該導電墊和該黏合層的至少其中之一所形成。
  3. 如請求項1所述的微型黏合結構，其中該擴散黏合部分是由施加外部壓力至該導電墊和該黏合層所形成。
  4. 如請求項1所述的微型黏合結構，其中該擴散黏合部分是形成於具有一還原氣體的環境中。
  5. 如請求項1所述的微型黏合結構，其中該導電墊和該黏合層的其中之一包含銅、錫、鈦和銦當中的一個，且銅、錫、鈦和銦當中的一個佔該導電墊和該黏合層之一的原子數的一半以上。
  6. 如請求項1所述的微型黏合結構，其中從該導電墊擴散至該黏合層的擴散係數大於從該黏合層擴散至該導電墊的擴散係數。
  7. 如請求項1所述的微型黏合結構，更包含一第一黏著層，設置在該導電墊和該基板之間。
  8. 如請求項1所述的微型黏合結構，更包含一第二黏著層，設置在該微型元件和該黏合層之間。
  9. 如請求項1所述的微型黏合結構，更包含至少一電極，設置在該黏合層和該微型元件之間。
  10. 如請求項1所述的微型黏合結構，其中該微型元件的側向長度等於或小於50微米。
  11. 如請求項1所述的微型黏合結構，其中該空穴的垂直長度等於或小於200奈米。
  12. 如請求項1所述的微型黏合結構，其中該導電墊的面積小於或等於2500平方微米。
  13. 如請求項1所述的微型黏合結構，其中該黏合層為圖案化黏合層，其包含至少兩個獨立部分，該兩個獨立部分彼此電性隔離。
  14. 如請求項1所述的微型黏合結構，其中該微型元件包含：一第一型半導體層；一主動層，位於該第一型半導體層上；以及一第二型半導體層，位於該主動層上。
  15. 如請求項14所述的微型黏合結構，更包含一填充材料，位於該基板上並接觸該導電墊、該黏合層和該微型元件，其中該填充材料相對於該基板的高度大於該主動層相對於該基板的高度，且小於該微型元件相對於該基板的高度。
  16. 如請求項1所述的微型黏合結構，其中該黏合層的厚度範圍小於或等於10微米。
  17. 一種形成微型黏合結構的方法，包含： 形成一黏合層於一微型元件上；準備一基板，該基板具有一導電墊於其上；形成一液體層於該導電墊上；放置該微型元件至該基板上方並使該微型元件接觸該液體層；以及加熱該黏合層和該導電墊當中的至少一個至低於一熔點溫度，該熔點溫度為該黏合層和該導電墊當中熔點較低者，加熱速率小於或等於每分鐘12攝氏度以逐漸蒸發該液體層，使得該黏合層接觸該導電墊並在該黏合層和該導電墊之間形成複數個空穴，且間隙擴散發生在該黏合層和該導電墊之間以形成一擴散黏合部分。
  18. 如請求項17所述的方法更包含：施加一外部壓力至該導電墊和該黏合層，使得該導電墊和該黏合層受到壓縮壓力以增加該導電墊和該黏合層之間的黏合強度。
  19. 如請求項17所述的方法，其中該擴散黏合部分形成於具有一還原氣體的環境內。
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