JP7041477B2 - 導電性ボール及び電子装置とそれらの製造方法 - Google Patents
導電性ボール及び電子装置とそれらの製造方法 Download PDFInfo
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- JP7041477B2 JP7041477B2 JP2017131925A JP2017131925A JP7041477B2 JP 7041477 B2 JP7041477 B2 JP 7041477B2 JP 2017131925 A JP2017131925 A JP 2017131925A JP 2017131925 A JP2017131925 A JP 2017131925A JP 7041477 B2 JP7041477 B2 JP 7041477B2
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- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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Description
図5は実施形態の導電性ボールを示す図、図6~図10は実施形態の導電性ボールの製造方法を説明するための図である。
Claims (15)
- 銅ボールと、
前記銅ボールの外面にパターン化されて形成されたニッケル層と、
前記銅ボール及びニッケル層の各外面を被覆する錫系はんだと、を有し、
前記ニッケル層は開口領域を有し、前記開口領域から前記銅ボールの外面が露出しており、
前記錫系はんだが溶融する温度にリフロー加熱される際に、前記ニッケル層と前記錫系はんだとの間に(Cu,Ni)6Sn5層が形成され、前記ニッケル層から露出する前記銅ボールと前記錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層が形成されるように、前記ニッケル層に含有されるニッケルの量が調整されていることを特徴とする導電性ボール。 - 前記錫系はんだは、Sn/Agはんだ、Sn/Biはんだ、又は、Sn/Bi/Niはんだであることを特徴とする請求項1に記載の導電性ボール。
- 前記錫系はんだが溶融する温度にリフロー加熱される際に、前記ニッケル層と前記錫系はんだとの間に(Cu,Ni)6Sn5層のみが形成され、前記ニッケル層から露出する前記銅ボールと前記錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層のみが形成されることを特徴とする請求項1又は2に記載の導電性ボール。
- 第1接続パッドを備えた下側電子部材と、
前記下側電子部材の上に配置され、第2接続パッドを備えた上側電子部材と、
前記下側電子部材の第1接続パッドと前記上側電子部材の第2接続パッドとを接続する導電性ボールと
を有し、
前記導電性ボールは、
銅ボールと、
前記銅ボールの外面にパターン化されて形成されたニッケル層と、
前記銅ボール及びニッケル層の各外面を被覆する錫系はんだと、を有し、
前記ニッケル層は開口領域を有し、前記開口領域から前記銅ボールの外面が露出しており、
前記導電性ボールのニッケル層と錫系はんだとの間に(Cu,Ni)6Sn5層が形成され、
前記導電性ボールのニッケル層から露出する銅ボールと錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層が形成されていることを特徴とする電子装置。 - 前記錫系はんだは、Sn/Agはんだ、Sn/Biはんだ、又は、Sn/Bi/Niはんだであることを特徴とする請求項4に記載の電子装置。
- 前記導電性ボールのニッケル層と錫系はんだとの間に(Cu,Ni)6Sn5層のみが形成され、
前記導電性ボールのニッケル層から露出する銅ボールと錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層のみが形成されていることを特徴とする請求項4又は5に記載の電子装置。 - 前記第1接続パッド及び前記第2接続パッドの各表面はニッケル層又は銅層であり、
前記第1接続パッドと前記錫系はんだとの間、及び前記第2接続パッドと前記錫系はんだとの間に、(Cu,Ni)6Sn5層がそれぞれ形成されていることを特徴とする請求項4乃至6のいずれか一項に記載の電子装置。 - 銅ボールを用意する工程と、
前記銅ボールの外面にニッケル層をパターン化して形成する工程と、
前記銅ボール及びニッケル層の各外面を被覆する錫系はんだを形成する工程と、を有し、
前記ニッケル層に開口領域が形成され、前記開口領域から前記銅ボールの外面が露出し、
前記錫系はんだが溶融する温度にリフロー加熱される際に、前記ニッケル層と前記錫系はんだとの間に(Cu,Ni)6Sn5層が形成され、前記ニッケル層から露出する前記銅ボールと前記錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層が形成されるように、前記ニッケル層に含有されるニッケルの量が調整されることを特徴とする導電性ボールの製造方法。 - 前記錫系はんだは、Sn/Agはんだ、Sn/Biはんだ、又は、Sn/Bi/Niはんだであることを特徴とする請求項8に記載の導電性ボールの製造方法。
- 前記錫系はんだが溶融する温度にリフロー加熱される際に、前記ニッケル層と前記錫系はんだとの間に(Cu,Ni)6Sn5層のみが形成され、前記ニッケル層から露出する前記銅ボールと前記錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層のみが形成されることを特徴とする請求項8又は9に記載の導電性ボールの製造方法。
- 第1接続パッドを備えた下側電子部材と、
第2接続パッドを備えた上側電子部材と、
銅ボールと、前記銅ボールの外面にパターン化されて形成されたニッケル層と、前記銅ボール及びニッケル層の各外面を被覆する錫系はんだとを有する導電性ボールと
を用意する工程と、
前記下側電子部材の第1接続パッドと前記上側電子部材の第2接続パッドとを、前記導電性ボールの錫系はんだをリフロー加熱して接続する工程と、を有し、
前記ニッケル層に開口領域が形成され、前記開口領域から前記銅ボールの外面が露出し、
前記下側電子部材の第1接続パッドと前記上側電子部材の第2接続パッドとを接続する工程において、
前記導電性ボールのニッケル層と錫系はんだとの間に(Cu,Ni)6Sn5層が形成され、
前記導電性ボールのニッケル層から露出する銅ボールと錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層が形成されることを特徴とする電子装置の製造方法。 - 前記錫系はんだは、Sn/Agはんだ、Sn/Biはんだ、又は、Sn/Bi/Niはんだであることを特徴とする請求項11に記載の電子装置の製造方法。
- 前記下側電子部材の第1接続パッドと前記上側電子部材の第2接続パッドとを接続する工程において、
前記導電性ボールのニッケル層と錫系はんだとの間に(Cu,Ni)6Sn5層のみが形成され、
前記導電性ボールのニッケル層から露出する銅ボールと錫系はんだとの間に、下から順に、Cu3Sn層及び(Cu,Ni)6Sn5層のみが形成されることを特徴とする請求項11又は12に記載の電子装置の製造方法。 - 前記導電性ボールを用意する工程において、
前記導電性ボールは、前記錫系はんだをリフロー加熱する際に、前記銅ボールの銅が前記錫系はんだに拡散して、前記錫系はんだ内の銅の濃度が0.7wt%~3wt%になることを特徴とする請求項11乃至13のいずれか一項に記載の電子装置の製造方法。 - 前記下側電子部材の第1接続パッドと前記上側電子部材の第2接続パッドとを接続する工程において、
前記第1接続パッド及び前記第2接続パッドの各表面はニッケル層又は銅層であり、
前記第1接続パッドと前記錫系はんだとの間、及び前記第2接続パッドと前記錫系はんだとの間に、(Cu,Ni)6Sn5層がそれぞれ形成されることを特徴とする請求項14に記載の電子装置の製造方法。
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