TW545098B - Fine pad pitch organic circuit board with plating solder and method for fabricating the same - Google Patents

Fine pad pitch organic circuit board with plating solder and method for fabricating the same Download PDF

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Publication number
TW545098B
TW545098B TW91134574A TW91134574A TW545098B TW 545098 B TW545098 B TW 545098B TW 91134574 A TW91134574 A TW 91134574A TW 91134574 A TW91134574 A TW 91134574A TW 545098 B TW545098 B TW 545098B
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Taiwan
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solder
circuit board
layer
scope
item
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TW91134574A
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Chinese (zh)
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TW200409575A (en
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I-Chung Tung
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Phoenix Prec Technology Corp
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Abstract

A fine pad pitch organic circuit board with plating solder and a method for fabricating the circuit board with plating solder are provided. The circuit board is formed with a plurality of densely arranged contact pads on at least a surface thereof in the absence of solder mask being applied over the surface. After deposition of a conductive seed layer on the contact pads, a resist layer is applied over the surface of the circuit board, and formed with a plurality of openings for exposing the seed layer corresponding in position to the contact pads. Then, a solder material is deposited in the openings by a plating method. Finally, the resist layer and the seed layer underneath the resist layer are removed, making the circuit board readily subject to subsequent fabrication processes for forming flip-chip joints or board-to-board joints.

Description

545098 五、發明說明(1) [發明所屬之技術領域] 本發明係有關於一種用於電子封裝件且具有鍍銲錫之 電路板及其製造方法;具體而言,係有關於一種具有鍍銲 錫之微銲墊間距有機電路板,該鍍銲錫係用以形成覆晶銲 錫接以及板對板之銲錫接,以及關於一種製造該具有鍍銲 錫之微銲墊間距有機電路板之方法。 [先前技術] 自從IBM公司在I 9 6 0年早期引入覆晶封裝(f lip chip package)技術以來,由於矽晶片與陶瓷基板間的熱膨脹係 數差較小,故覆晶元件主要係設置於價格昂貴的陶竟基板 上。相較於打線(w i r e b ο n d )技術,覆晶技術之特徵係在 於晶片與基板間的電性連接係透過銲錫凸塊而非打線。而 該種覆晶技術之優點在於,該技術可提高封裝密度以降七 元件輪廓;同時,該種覆晶技術不需使用長度較長之=^ 線’故可提南電性性能。有鑑於此,業界在陶兗基板“ 用高溫銲錫,即所謂控制崩解之晶片連接技術 上使 (control-collapse chip connection, C4),已有 4〇年 久。然而近年來,由於需要高密度、高速度以及低成 之 半導體元件,及為因應電子產品之體積逐漸縮小的趨之 將覆晶元件設置於低成本的有機電路板(例如,印刷電路545098 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a circuit board with solder plating and its manufacturing method for electronic packages; specifically, it relates to a circuit board with solder plating A micro-pad pitch organic circuit board, the plated solder is used to form a flip-chip solder joint and a board-to-board solder joint, and a method for manufacturing the micro-pad pitch organic circuit board with plated solder. [Previous technology] Since the introduction of flip chip package technology by IBM in early 960, due to the small thermal expansion coefficient difference between silicon wafers and ceramic substrates, flip chip components are mainly set at price Expensive pottery actually on the substrate. Compared with wire bonding (wier e b o n d) technology, flip chip technology is characterized in that the electrical connection between the chip and the substrate is through solder bumps instead of wire bonding. The advantage of this flip-chip technology is that it can increase the packaging density to reduce the outline of the components. At the same time, this flip-chip technology does not need to use a longer = ^ line, so it can improve the electrical performance. In view of this, the industry has been using control-collapse chip connection (C4) for ceramic substrates with high-temperature solder, the so-called control-collapse chip connection technology (C4). However, in recent years, due to the need for high density , High-speed and low-cost semiconductor components, and chip-on-chip devices on low-cost organic circuit boards (for example, printed circuits) in response to the gradual shrinking of electronic products

板或基板),並以環氧樹脂底膠(underf丨u resin)填充、 晶片下方以減少矽晶片與有機電路板之結構間因熱膨勝、: 異所產生的熱應力,已呈現爆炸性的成長。而業界所職是 的低溫覆晶銲錫接以及有機電路板之利用,可 夂目 八^降低Board or substrate), filled with epoxy resin (underf 丨 u resin), under the chip to reduce the thermal expansion between the silicon wafer and the structure of the organic circuit board due to thermal stress: growing up. The use of low-temperature flip-chip solder joints and organic circuit boards in the industry can be reduced

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545098 五、發明說明(2) 覆晶元件之製造成本。 ,現仃的低成本覆晶技術中,半導體積體 置有電性的電極薛塾⑹一…s)。該 板之Γ=:具有相對應的接觸銲塾。在該晶片以及電路 著材料。,曰】=ΐ地設置低溫銲錫凸塊或其他導電黏 板上,饮i"曰\片係廷性接觸面朝下的方式設置於該電路 電路;fe s Μ,該銲錫凸塊或導電黏著材料提供該晶片以及 錫凸輸出(1/0)以及機械性的連接。就銲 曰=塊知錫接(S0lder bump j0int)而言,可進_ + 2 =電路板間的間隙中填入有機底,,以抑^二 :所示1個金屬凸塊"係形成☆晶片13之電:J塾Τ圖 以及數個由低溫銲料所製成的預銲錫凸 有機電路板16之接觸銲墊15上。 1形成於 :融之迴鲜溫度條件下,藉由將預。=:=鬼14 f之金屬凸塊u即可形成鲜錫接17。然後 目對 充填於該晶片13以及該電路板16之間的間 氏膠材料18 錫接17包覆於其中,即完成覆晶元件丨。第^ 亚將該銲 說明另一種未使用預銲錫凸塊的覆晶元件1, 2Β圖係 示,數個銲錫凸塊19係形成於晶片13之 心匕中所 者,使晶片13迴銲至電路板16;其中,該12上。接 至該電路板16之接觸銲墊15而形成銲錫接^'。旧^ 19銲接 ^後’以底545098 V. Description of the invention (2) Manufacturing cost of flip chip device. In the current low-cost flip-chip technology, the semiconductor body is provided with electrical electrodes Xue Yiyi ... s). This plate of Γ =: has a corresponding contact welding pad. Materials are attached to the wafer and the circuit. , =] Low temperature solder bumps or other conductive adhesive plates are installed, and the " sheet is placed on the circuit circuit with the contact surface facing downward; fe s Μ, the solder bumps or conductive adhesive The material provides the wafer with bump output (1/0) and mechanical connections. As far as soldering = block soldering (S0lder bump j0int), you can enter _ + 2 = fill in the organic substrate in the gap between the circuit boards, in order to suppress ^ 2: 1 metal bump as shown in the figure ☆ Electricity of wafer 13: JHT picture and contact pads 15 of several pre-solder bump organic circuit boards 16 made of low temperature solder. 1 is formed under the condition of the freshness temperature of the melt, by preliminarily. =: = Ghost 14 f metal bump u can form a fresh tin connection 17. Then, the interstitial material 18 filled between the wafer 13 and the circuit board 16 is tinned 17 and covered, thereby completing the flip chip. Section ^ This solder illustrates another flip-chip component 1, 2B without pre-solder bumps. Several solder bumps 19 are formed in the heart of the wafer 13, and the wafer 13 is re-soldered to Circuit board 16; wherein the 12 is on. The contact pads 15 connected to the circuit board 16 form solder joints. Old ^ 19 welding ^ after ‘to the bottom

16974.ptd16974.ptd

545098 五、發明說明(3) ^ '---一- 膠材料1 8填充於該晶片丨3以及該電路板丨6之間的間隙中, 並將該銲錫接1 7包覆於其中,即完成覆晶元件丨,。 第3圖係說明一種習知的用於覆晶封裝件之有機電路 板100,該電路板具有接觸銲墊101且該銲墊間隙ι〇9係大 於0 . 1 8*米。該有機電路板1 〇 〇之絕緣層i 〇 2可由有機材 料、混纖維之有機材料或混顆粒之有機材料等(例如,環 氧樹脂(polyimide)、聚亞醯胺p〇iyimide、順雙丁稀二酸 醯亞胺 /三氮阱(bismeleimide triazine)、氰酯(Cyanate ester)、聚苯并環丁烯(p〇iybenzocycl〇butene)或其玻璃 纖維(glass fiber)之複合材料等)所製成。該接觸銲墊 1 0 1典型地係由金屬材料(例如,銅)所形成。一般的金屬 阻障層1 0 3包含鎳黏著層以及形成於該銲墊1 〇丨上的金保護 層。然而,該阻障層亦可由金、鎳、鈀、銀、錫、鎳/ 鈀、鉻/鈦、鈀/金或鎳/鈀/金等,藉由電鍍 (electroplating)、無電鑛(electroless plating)或物 理氣相沈積(physical vapor deposition)等方法形成。 在該電路板100之表面上沈積有機絕緣保護層(0jrganic solder mask layer)l〇4,以保護電路層105並提供絕緣特 性。最上層的兩層電路層1 〇 5、1 0 6,一般係透過該項領域 中習知的導孔1 〇 7電性連接。參照第3圖,在該種銲墊間隙 1 0 9較大(例如,大於〇 · 1 8毫米)的情況下,電路線1 〇 8可設 置於兩接觸銲墊1 0 1之間。並在接觸銲墊1 〇 1上形成預銲錫 凸塊1 1 0供形成覆晶銲錫接;其中,目前業界主要係藉由 I 鋼板印刷技術(stencil printing technology)沈積輝錫545098 V. Description of the invention (3) ^ '-----The adhesive material 1 8 is filled in the gap between the wafer 丨 3 and the circuit board 丨 6, and the solder joint 17 is wrapped in it, that is, Complete the flip chip 丨,. FIG. 3 illustrates a conventional organic circuit board 100 for a flip-chip package. The circuit board has a contact pad 101 and the pad gap ι09 is greater than 0.18 * m. The insulating layer i 〇2 of the organic circuit board 100 may be made of organic materials, organic materials with mixed fibers, or organic materials with mixed particles, and the like (for example, epoxy resin (polyimide), polyimide (polyimide), cis-butadiene Made from diimide diimide / biseleimide triazine, cyanate ester, polybenzocyclobutene or glass fiber composite materials, etc. to make. The contact pad 1 0 1 is typically formed of a metal material (for example, copper). The general metal barrier layer 103 includes a nickel adhesion layer and a gold protective layer formed on the pad 101. However, the barrier layer can also be made of gold, nickel, palladium, silver, tin, nickel / palladium, chromium / titanium, palladium / gold or nickel / palladium / gold, etc., by electroplating, electroless plating Or physical vapor deposition (physical vapor deposition). An organic soldering mask layer 104 is deposited on the surface of the circuit board 100 to protect the circuit layer 105 and provide insulation characteristics. The top two circuit layers 105 and 106 are generally electrically connected through vias 107 which are well known in the field. Referring to FIG. 3, in a case where the pad gap 1 0 9 is large (for example, greater than 0.18 mm), the circuit wire 108 may be disposed between the two contact pads 101. Pre-soldering bumps 1 10 are formed on the contact pads 101 for forming flip-chip solder joints. Among them, the industry currently mainly deposits tin solder by I stencil printing technology.

545098 五、發明說明(4) ' 一 以形成銲錫凸塊。纟電路板上形成預銲錫凸塊的常用方法 (如,鋼板印刷技術),可參考美國專利第 5’203’0 7 5 Ungulas et al)、美國專利第 5 4 9 2,2 6 6號 (Hoebener et al)以及美國專利第5, 8 28, 1 2 8號 (HlgaShlgUchl et 等專利所揭示之相關先前技術。然 而’在貫際操作上,當銲墊間隙1 〇 9縮減至〇 ·丨5毫米以下 時,鋼板印刷技術則變得良率過低而不可行;此外,隨者 紅墊間隙1 0 9的縮減’絕緣保護層1 〇 4對於該電路板1 〇 〇本 ^的接觸面積111則變得更小,而使該絕緣保護層i 4對於 該電路板1 0 0本身的黏著力有減弱的趨勢。 使用電鍍的方式形成銲錫凸塊則可克服該種銲墊間距 ,限制二使用電鍍的方式在覆晶電路板上形成銲錫凸塊的 相關先前技術,已揭示於美國專利第5,391,514號(Gall al)以及美國專利第5,48〇 8 3 5號(H〇ebener)。然而, 電:製程仍存在著有可能使形成於該電路板之絕緣保護層 » 可里鍍後的均勻性以及凸塊的高度。 緣:護層的存在,"對該電路板的效能產生不利地 ^ ^ ί収銲墊間距小於ϋ.15毫米時;於此情況下,形 tl/路板卢的絕緣保護層,肖於該電路板的黏著力變 ϋν:上/弟3圖所述),在環境的影響下,由於金屬的 使其喪失其絕她生。再者,由於該絕 構成該有機電路板的其他材料,通常具有 相對較尚的CTE以及較低的玻璃轉移溫度(giass transition temperature);因此,在電路板的微銲墊間545098 V. Description of the invention (4) '1 to form solder bumps.的 For common methods for forming pre-solder bumps on circuit boards (such as stencil printing technology), refer to U.S. Patent No. 5'203'0 7 5 Ungulas et al) and U.S. Patent No. 5 4 9 2, 2 6 6 ( Hoebener et al) and U.S. Patent No. 5, 8 28, 1 2 8 (HlgaShlg Uchl et al. Related prior art disclosed. However, in the interim operation, when the pad gap 109 is reduced to 0. 5 Below millimeters, the stencil printing technology becomes too low to be viable; in addition, the red pad gap of 109 is reduced, and the insulation protection layer 1 〇4 is in contact with the circuit board 001. The contact area 111 It becomes smaller, and the adhesion of the insulating protective layer i 4 to the circuit board 100 itself tends to weaken. The use of electroplating to form solder bumps can overcome this type of pad spacing, limiting the use of two Prior art related to the formation of solder bumps on flip-chip circuit boards by electroplating has been disclosed in U.S. Patent No. 5,391,514 (Gall al) and U.S. Patent No. 5,48,083 (Hobeener). However, the electrical: process still exists that has the potential to make the circuit board Insulation protective layer »Uniformity after plating and the height of the bumps. Edge: The existence of the protective layer " adversely affects the efficiency of the circuit board ^ ^ When the pad spacing is less than ϋ.15 mm; In this case, the insulating protective layer of the shape tl / board Lu, the adhesion of the circuit board becomes ϋν: described in Figure 3/3), under the influence of the environment, due to the metal, it loses its absolute strength. Raw. Moreover, because the other materials constituting the organic circuit board generally have relatively high CTE and low giass transition temperature; therefore, between the micro-pads of the circuit board

545098 五、發明說明(5) 距處存在有絕緣 鑒·於上述之 電路板之微銲墊 路板之銲墊上沈 及板對板之銲錫 [發明内容] 本發明之主 距有機電路板及 成有多個排列密 覆蓋於該銲墊間 錫接以及板對板 本發明之另 塾間距有機電路 距有機電路板, 且該表面不具有 晶種層沈積於該 並於對應該接觸 種層曝露出來; 沈積於該開口; 晶種層。 本發明之又 墊間距有機電路 距有機電路板, 且該表面不具有 要目的 該電路 集的接 距上, 之銲錫 -目的 板的方 該電路 絕緣保 表面上 輝塾之 經由鍍 以及, 問S :必I t造成信賴性降低的問題。 間之微銲ί Ϊ供:種不具有絕緣保護層於 门< U I干墊間距有機電路杈, 積銲錫凸塊之方法,以形戍锟=卷 接。 々设日日鲜錫接以 係提供一種具有鍍鉾錫之微銲墊間 板之製造方法,該電路板表面上形 觸銲墊,且该表面教無絕緣保護層 俾在該鮮墊上鑛銲锡以形成覆晶銲 接。 係提供一種形成具有鍍銲錫之微銲 法’該方法係先提供一種微銲墊間 板具有一表面設有至少一接觸鮮塾 護層覆蓋於該銲墊間距上;將導電 ;於該導電晶種層上覆蓋一阻層, 位置處形成有至少一開孔以使該晶 覆法(Ρ 1 a t i n g m e t h 〇 d )將銲錫材料 移除該阻層與位於該阻層下之導電 一目的係提供一種形成具有鐘銲錫之微銲 板的方法,該方法係先提供一種微銲墊間 該電路板具有一表面設有至少一接觸鮮塾 絕緣保護層覆蓋於該銲墊間距上;於該表545098 V. Description of the invention (5) Insulation can be found at the distances · The sinking of the pads and the board-to-board solder of the above-mentioned micro pads of the circuit board and the board-to-board solder [Content of the Invention] The main distance organic circuit board and the invention There are a plurality of arrays densely covering the soldering between the pads and the board-to-board. The other pitch organic circuit of the present invention is away from the organic circuit board, and the surface does not have a seed layer deposited thereon and exposed to the corresponding seed layer. Deposited on the opening; a seed layer. According to the invention, the pad-pitch organic circuit is away from the organic circuit board, and the surface does not have the connection distance of the circuit set. The solder-destination board is the circuit insulation surface of the circuit. : It must cause a problem of reduced reliability. The micro-soldering method is a kind of method that does not have an insulating protective layer on the gate < U I dry pad pitch organic circuit branch, and a solder bump, which is shaped as a coil. The design of the daily fresh tin connection is to provide a method for manufacturing a micro-pad interlayer with tin-plated tin. The surface of the circuit board is formed with a contact pad, and the surface is taught without an insulating protective layer. Tin to form flip-chip solder. A method for forming a micro-soldering method with a plated solder is provided. The method is to first provide a micro-solder pad board with a surface provided with at least one contact pad covering the pad pitch; conductive; A seed layer is covered on the seed layer, and at least one opening is formed at the position so that the cladding method (P1atingmethod) removes the solder material from the resist layer and the electrical conduction under the resist layer. The purpose is to provide a A method for forming a micro-soldering board with a bell solder. The method is to first provide a micro-soldering pad. The circuit board has a surface provided with at least one contact fresh insulation protective layer covering the pad spacing.

第10頁 545098 五、發明說明(6) __ 面上覆蓋一阻層,並於對應該 一開孔以使該晶種層曝藏+ 觸1于墊之位置處形成有至 少一開孔以使該日曰曰種層曝g =觸銲墊之位置 (electroless plating )法將 ’”無電鍍 以 及,移除該阻層。 材料沈積於該開 本發明具有鍍銲錫之微 片形成覆晶銲錫接,或與電間距有機電路板,可與晶 較於習知方法係使用表面^ =形成板對板之銲錫接。相 之電路板可能對電路板之效〜$緣保護層覆蓋於銲墊間距 將絕緣保護層施用於該電路=f不利地影響;本發明不 域,可以藉由鍍覆麥程 接觸銲墊排列緊密的區 銲墊上,…知=材料成功地沈積於該接觸 之電路板而影響信賴性的問^中使用表面具有絕緣保護層 [實施方式] ' 第4至1 3圖將詳細說明 距有機電路板及 1 I月,、有鍍銲錫之微銲墊間 伋及其製造方法的較佳實施例。 π弟4Α圖所示,電路板一 電路層2 0 2,其中,兮楚_ 〇匕括弟一黾路層201與第二 問1 士 ^ ” 以弟一電路層2 0 1與該第一雷抆Μ 9 D 9 間具有一絕緣層2〇5,並 书路層202 層電性連接。兮奶$ s 9nc 2〇使该弟一與第二電路 材枓+、θ as μ、、、巴緣層2 05可由有機材料、混纖堆之右嬙 材枓或混顆粒之右捣姑 此纖維之有機 或其玻璃纖::::’三氮牌、氰醋、聚苯并環丁烯 上僅具有等)所製成。在該第-電路層W 其上。可視奋;ΐ 2〇4而無其他金屬導線(traces)形成於 A際需要’將金m、錫、金/鎳、Page 10 545098 5. Description of the invention (6) A resist layer is covered on the surface, and an opening is formed to expose the seed layer + at least one opening is formed at the position of the pad so that On that day, the seed layer was exposed to g = electroless plating, and the "" electroless plating was removed and the resist layer was removed. The material was deposited on the microchip with plated solder of the present invention to form a flip-chip solder joint. Or, an organic circuit board with electrical spacing can be used to connect the crystals to the surface using conventional soldering method. ^ = The circuit board may be effective for the circuit board. The edge protection layer covers the pad spacing. Applying an insulating protective layer to the circuit = f adversely affects; the present invention is not applicable, and can be plated on the area pads arranged in close contact with the contact pads, ... Insufficient reliability is used on the surface with an insulating protective layer. [Embodiments] 'Figures 4 to 13 illustrate in detail the distance between the organic circuit board and the micro pads with plated solder and their manufacturing methods. The preferred embodiment is shown in Figure 4A. Road layer 2 0 2, among which, Xi Chu_ 〇 括 一 一路 路 201 and the second question 1 ^ ”There is an insulation between the circuit layer 2 0 1 and the first lightning 9 9 D 9 The layer 202 is electrically connected to the layer 202. Xi milk $ s 9nc 2 0 makes the brother and the second circuit material 枓 +, θ as μ, 巴, and the edge layer 205 can be made of organic materials, mixed fiber piles, or mixed particles. The fiber is organic or its glass fiber: ::: Made from triazo brand, cyanoacetate, polybenzocyclobutene, etc.). On the first circuit layer W thereon. Visible; ΐ 204 and no other metal wires (traces) are formed at the A need ’gold m, tin, gold / nickel,

].b974.ptd 第11頁 545098 五、發明說明(7) ^ -- 鎳 /鈀或鎳/鈀/金等金屬所構成之金且 觸銲墊2 0 4上。衮 七工, ^ ^ ^ ^ ^ 另一方面,如第4B圖所示,有機電路板300 二紅Γ、又面僅含有接觸銲墊3 01,且該接觸銲墊3 〇 1係 右 v孔3 0 2之上表面。該接觸銲墊3 0 1上亦可形成 2二,、!巴、銀、錫、金/鎳、鎳/妃或鎳/金等所 屬阻障層。該有機電路板300亦包括第一電路層 @ ^\弟T電路層3 0 4,該第—與第二電路層間具有一絕緣 :Γ!,二藉由導孔30 2使該第-與第二電路層電性連接。 Γ ί Ϊ 由有機材料、混纖維之有機材料或混顆粒之 兹、料_等(例如,環氧樹脂、聚亞醯胺、順雙丁稀二酸 t Ξ t ^二氮阱、氰酯、聚苯并環丁烯或其玻璃纖維之複 "米等)所製成。同樣地,該電路板3 0 0的表面上並不具 有絕緣保護層形成於其上。 “般而吕’當該接觸銲墊2 0 4、3 0 1係以高密度排列或 ^有微胃銲墊間距時,可以使用鍍覆法(例如,電鍍或無電 、又將#錫材料沈積至該電路板2 〇 〇、3 〇 〇之接觸銲墊2 〇 4、 3 〇 1上。在將銲錫材料沈積至該接觸銲墊2 0 4、3 0 1之前, 可先於該接觸銲墊2 0 4、3〇1上,形成導電晶種層(將於後 文中詳細說明),以利銲錫材料的沈積。該導電晶種層可 藉由物理氣相沈積(PVD)、化學氣相沈積(CVD)、無電鍍或 化學沈澱,例如濺鍍(S p u 11 e r i n g)、蒸鍍 (evaporation)' 電孤蒸氣沈積(arc vap〇r eposition)、離子束錢錢(i〇n beam sputtering)、雷射 熔散沈積(laser ablati〇n dep〇si ti〇n)、電漿促進化學] .b974.ptd Page 11 545098 V. Description of the invention (7) ^-Gold made of metals such as nickel / palladium or nickel / palladium / gold and touching the solder pads 204.衮 七 工, ^ ^ ^ ^ ^ On the other hand, as shown in FIG. 4B, the organic circuit board 300 is two red Γ, and only contains the contact pad 3 01, and the contact pad 3 〇1 is the right v hole 3 0 2 above the surface. The contact pads 3 01 can also form 2 2,! Bar, silver, tin, gold / nickel, nickel / feather or nickel / gold are barrier layers. The organic circuit board 300 also includes a first circuit layer @ ^ \ 弟 T circuit layer 304, and there is an insulation between the first and second circuit layers: Γ !, and the first and second sections are made through the vias 30 2. The two circuit layers are electrically connected. Γ ί Ϊ Made of organic materials, organic materials of mixed fibers or mixed particles, such as materials, such as epoxy resins, polyimide, maleic acid t Ξ t ^ dinitrogen trap, cyanate, Made of polybenzocyclobutene or its glass fiber ". Likewise, the surface of the circuit board 300 does not have an insulating protective layer formed thereon. "Generally, when the contact pads 2 0 4 and 3 0 1 are arranged at a high density or there is a microgastric pad pitch, a plating method (for example, electroplating or no electricity, and depositing #tin material) can be used. To the contact pads 2 0 4 and 3 0 1 of the circuit board 2 0, 3 0 0. Before the solder material is deposited on the contact pads 2 0 4 and 3 01, the contact pads may be preceded by the contact pads A conductive seed layer (to be described in detail later) is formed on the 304 and 301 to facilitate the deposition of solder materials. The conductive seed layer can be formed by physical vapor deposition (PVD) or chemical vapor deposition. (CVD), electroless plating or chemical precipitation, such as sputtering (S pu 11 ering), evaporation (arc vapor eposition), ion beam sputtering (ion beam sputtering), Laser Fused Deposition (laser ablati〇n dep〇si ti〇n), Plasma to promote chemistry

16974.ptd16974.ptd

第12頁 545098 五、發明說明(8) =相沈^ (PECVD)或有機金屬化學氣相沈積(M〇CVD)等方 法,形成於該電路板2 〇 〇、3 〇 〇之表面。 2〇〇Λν^/2:4 :ιιι : :02?:6: ^ ZU4再將阻層207直接施放於該導電晶種 亚使該阻層2G7於相對應㈣接觸銲墊204之位 1妾至者少有2 〇 8,以部分地曝露出該導電晶種 hqj并ί者丄精鍍覆製程(較佳為電鍍),將銲錫材料 第H;曝露出該導電晶種層2 0 6之開孔2 0 8;然後,如 iim’η移除該阻層20 7以及該阻層所覆該之該導電 迴銲、:产佟杜取後’纟足以使該沈積之銲錫材料2〇9熔融之 件下,進行迴銲(refl〇w-S〇ldering)的製程, 曰曰 塊Til錫π材料209經迴銲而在該接觸銲墊204上形成銲錫凸 ^ _同樣地,參照第6A圖中所示之電路板3 0 0,導電, 芦於該電路板3〇0之接觸銲墊301,再將阻 才曰目對庫於放於該導電晶種層306上;並使該阻層3 0 7在 相對應於該接觸銲墊301的位置上形成至少有一在 以部分地曝露出該導電晶種層3 〇 6。接著,二舜* 8 ’ 將銲錫材料3〇9沈積於該開孔3 曰:復砍程 移除該阻層3〇7以及位於該阻層下之導後電日曰如弟:所示, 迴銲的製程’使經沈積之銲錫材料 ‘:,進行 銲塾304上形成銲錫凸塊31〇。+ 9,^麵而在该接觸 屬層=晶種層,3?6可由金屬、合金或堆叠數層金 2 0 6、3 0 6r惟’依,際#作的經驗’該導電晶種層 軚佳係由銅或鈀粒子(特別是無電鍍)所構成。該Page 12 545098 V. Description of the invention (8) = phase precipitation ^ (PECVD) or organic metal chemical vapor deposition (MOCVD) and other methods, formed on the surface of the circuit board 2000, 300. 2〇Λν ^ / 2: 4: ιιι :: 02?: 6: ^ ZU4 then directly puts the resistive layer 207 on the conductive seed to make the resistive layer 2G7 at the position corresponding to the contact pad 204. There are at least 208, in order to partially expose the conductive seed crystals hqj and 丄 a fine plating process (preferably electroplating), the solder material is H; exposed to the conductive seed layer 2 0 6 Open the hole 2 0 8; then, if iim'η removes the resist layer 20 7 and the conductive reflow covered by the resist layer, after the product is removed, it is sufficient to make the deposited solder material 2 09 Under the melted part, a process of reflow soldering is performed. A piece of Til tin π material 209 is reflowed to form a solder bump on the contact pad 204. Similarly, referring to FIG. 6A The circuit board 300 shown in the figure is electrically conductive. The contact pads 301 on the circuit board 300 are placed on the conductive seed layer 306, and the resistance layer 3 is placed on the conductive seed layer 306. 0 7 is formed at a position corresponding to the contact pad 301 to at least partially expose the conductive seed layer 3 06. Next, Ershun * 8 'deposits solder material 309 on the opening 3: the cutting process removes the resistance layer 307 and the electrical conductivity after the conductive layer under the resistance layer is shown as follows: The process of re-soldering “makes the deposited solder material”: forming a solder bump 31 on the solder pad 304. +9, ^ plane and in the contact metal layer = seed layer, 3-6 can be made of metal, alloy or stacked layers of gold 2 0 6, 3 0 6r, but 'depending on the experience of the occasion' the conductive seed layer Xijia is composed of copper or palladium particles (especially electroless plating). The

545098 五、發明說明(9) $錫材料2 0 9、,3 0 9可為選自鉛、錫、銀、銅、鉍、銻、 合弘錄、錐 '鎮、姻、碲以及鎵所構成之組群之元素的混 亦;所構成之合金。應注意的是,若有需要或可行的話, 於该接觸銲墊間形成導電線。 洗私根據本發明,該銲錫材料2 0 9、3 0 9亦可藉由連續鍍覆 鍍^兀素的!'式形成。例如,於該開孔208、308依序藉由 錫::ΐ銀薄層以及錫I,在迴銲製程後’銀最終會熔於 形成共溶的錫-銀銲錫凸塊2丨〇、3 1 〇。 :本發明的另一實施例+,在沈積該銲錫材料之前, 銲鎮ί Ϊ接觸銲墊上形成金屬墊以提高後續沈積於其上之 =材料。如第7Α圖所示,以該電路板3〇〇為例,施放之 對1307之後,藉由電鍍或無電鍍,在該導電晶種岸30= j應於該接觸銲墊301之位置並透過開孔30 8曝露/ 目 :形成數個金屬墊311。此種金屬墊311可由單—八j 4 卜金屬層所…且較佳係由銅或高溫銲錫材J屬層 SnPb、SnAg或SnCii合金等)所形成。然後,將、(例 於:。9沈積於各個金屬塾311上;接著,進行迴銲穿;干,易材 示硪金屬墊311上形成最終的銲錫凸塊312,如第所以 如第8圖中所示,可選擇性地將該晶種層3〇6 觸銲墊301上’而非形成於該電路板3〇〇的 1於請 j所形成之阻層3 0 7而言,其可使銲錫材表面上; ,由無電鑛直接沈積於該晶種層3〇6上。不於圖中) 曰曰種層306實際上係作為該無電鑛製程之催化;况:,言亥 曰 然而, 545098 五、發明說明(ίο) 即使在該催化層(即,晶種層)3 0 6不存在的條件下,該辉 錫材料3 0 9亦可藉由無電鍍製程直接地沈積於該接觸銲塾 3 0 1上。因此,藉由使用無電鍍之製程,該銲錫材料2 〇 9、 3 0 9亦可於該晶種層2 0 6、3 0 6不存在的條件下,沈積於該 阻層2 0 7、3 0 7之該開孔2 0 8、3 0 8内。 該電路板2 0 0、3 0 0上之該晶種層2 0 6、3 0 6宜具有較薄 之尽度’以利透過姓刻的方法將其輕易地移除。實際上, 該晶種層係以0 · 0 0 0 1至〇 · 〇 〇 1毫米之厚度較為有效。關於 I虫刻溶液’可參考已知的金相學(m e t a 1 1 〇 g r a p h y )書籍(例 如,”Metallographic etching”, Gunter Petzow545098 V. Description of the invention (9) The tin material 2 0 9 and 3 9 may be selected from the group consisting of lead, tin, silver, copper, bismuth, antimony, Hehonglu, Cone's town, marriage, tellurium, and gallium The composition of the elements of the group is also an alloy; It should be noted that a conductive line is formed between the contact pads if necessary or feasible. Washing According to the present invention, the solder materials 209, 309 can also be formed by the continuous plating method. For example, in the openings 208 and 308, the tin :: silver thin layer and tin I are sequentially used, and the silver will eventually melt to form a eutectic tin-silver solder bump 2 after the reflow process. 1 〇. : Another embodiment of the present invention +, before depositing the solder material, a metal pad is formed on the solder pad to contact the pad to improve the subsequent material deposited thereon. As shown in FIG. 7A, taking the circuit board 300 as an example, after the pair 1307 is cast, by electroplating or electroless plating, the conductive seed bank 30 = j should be at the position of the contact pad 301 and penetrate Openings 30 8 Exposure / mesh: Several metal pads 311 are formed. Such a metal pad 311 may be made of a single metal layer, and preferably made of copper or a high-temperature solder material (J-layer SnPb, SnAg, or SnCii alloy, etc.). Then, (for example: 9 is deposited on each metal 塾 311; then, reflow through; dry, easy material display 硪 metal pad 311 to form the final solder bump 312, as shown in Figure 8 As shown in the figure, the seed layer 30 can be selectively touched on the pad 301 'instead of the resist layer 3 07 formed on the circuit board 3001, which can be The solder material is deposited on the surface of the solder material, and the electroless ore is directly deposited on the seed layer 3 06. (not shown in the figure) The seed layer 306 is actually used as a catalyst for the electroless ore process; 545098 V. Description of the Invention (ίο) Even in the absence of the catalytic layer (ie, the seed layer) 3 06, the tin-tin material 3 0 9 can be directly deposited on the contact by an electroless plating process. Welding pads 3 0 1 on. Therefore, by using an electroless plating process, the solder materials 209, 309 can also be deposited on the resistive layer 207, 3 in the absence of the seed layer 206, 3 06. The openings of 0 7 are within 2 0 8 and 3 0 8. The seed layer 2 06, 3 6 on the circuit board 2 0, 3 0 0 should have a thinner extent, so as to facilitate the easy removal of the seed layer by means of the last name. Actually, the seed layer is more effective with a thickness of 0. 0. 01 to 0. 0. 1 mm. Regarding I insect carved solution ’, please refer to known metallographic (me t a 1 1 〇 g r a p h y) books (for example,“ Metallographic etching ”, Gunter Petzow

MetalMetal

American Society for Metals, M^tais rarK, uhiU ( 1 9 78 ))加以選擇。此外,該導孔2〇3、3〇2可藉由鍍覆填 孔,或以導電物質(例如,銅、銲錫合金、填充金屬之樹 脂或填充碳之金屬等)填充或部分填充導孔,提供該導孔 2 0 3、3 0 2電性傳導之特性。更特別者,該導電材料之纟且成 與該銲錫材料2 0 9、3 0 9之組成相同時,該 〇3、 ^“爾料之鍍覆,爾同的鍍覆步驟中進行。再 粗糙;Γ巴::2二、3 0 5可視需要進行化學的或物理的表面 /、k &狀QIS/後」績的封裝製程中提供較佳的黏著特性。 f造該ί可以在該電路板3 0 0之接觸銲墊301上 衣化°玄鲜錫凸塊3 1 0,以應用於覆曰 joint)的結構。準偌豆古軲/n、设日日鲜錫接(fllP — chiP 401,以今带扛# 個電極銲墊402之半導體晶片 凸塊310之位f^刀別相對應於該電路板3 0 0之銲錫 式’將该半導體晶片4 0 1設置於該電路 545098 五、發明說明(11) t H、’然後’如第9β圖所示’進行迴鲜製程使該銲錫 迴銲至該電極銲墊4〇2,以於該半導體晶片4〇1以 板3 0 0之間’形成數個使該半導體晶片4〇1與該電 路板3 0 0電性連接的覆晶銲錫接4 0 3。 ^本發明之另一實施例中,可將該具有銲錫凸塊31〇 f :路板3 0 0應用於具有金屬凸塊的半導體晶片以形成覆 如第1〇細所示,半導體晶片501具有數個電極 、干 3形成於忒半導體晶片5 0 1的作用表面,該電極銲墊 上具有數個用以形成覆晶銲錫接之金屬凸塊5〇2。該半 導體晶片501係以該金屬凸塊5〇2分別相對應於該電路板 3 0 0之銲錫凸塊310位置之方式設置於該電路板3〇 〇上。然 後,如第1 0Β圖所示,使該銲錫凸塊3丨〇迴銲至該金屬凸塊 5 〇 2,以於該半導體晶片5 〇丨以及該電路板3 〇 〇之間形成覆 晶銲錫接5 04。該金屬凸塊5 0 2可由金屬、合金、或疊合數 種金屬所構成,例如銲錫凸塊、金凸塊、銅凸塊或以銲錫 帽(solder caps)覆蓋之銅柱等;且該金屬凸塊可為任何 形狀’例如釘柱狀凸塊、球形凸塊、柱狀凸塊或其他形狀 之凸塊。 根據本發明’該電路板亦可同時地用於形成覆晶銲錫 接以及板對板之銲錫接。於本實施例中將利用該具有銲竭 凸塊2 1 0之電路板2 0 0來加以說明,如第1 1 a圖所示,製備 一電路板6 0 0 (於後文中稱為”第二電路板”),該電路板可 為有機或陶瓷電路板,並將晶片6 0 2設置於接近該電路板 適當的位置;於該第二電路板6 0 0上,將數個接觸銲墊6 0 1American Society for Metals, M ^ tais rarK, uhiU (1 9 78)). In addition, the via holes 203 and 30 may be filled by plating, or the via holes may be filled or partially filled with a conductive substance (for example, copper, solder alloy, metal-filled resin or carbon-filled metal, etc.). Provide the characteristics of electrical conduction of the via holes 203, 302. More specifically, when the composition of the conductive material is the same as the composition of the solder materials 209 and 309, the 〇3, ^ "material plating, the same plating step is performed. Then rough Γ Bar: 2: 2 or 3 0 5 can be used for chemical or physical surface / k & QIS / after "packaging process to provide better adhesion characteristics. f. The ί can be coated on the contact pad 301 of the circuit board 3 0 ° with a high-grade tin bump 3 1 0 to be applied to a joint-covered structure. Quasi 偌 古 轱 / n, set daily fresh tin connection (fllP — chiP 401, with the current position of the semiconductor wafer bump 310 carrying # electrode pads 402 f ^ k corresponds to the circuit board 3 0 The solder type of 0 'sets the semiconductor wafer 4 0 1 to the circuit 545098. 5. Description of the invention (11) t H, and then' refreshing process' is performed as shown in Figure 9β to reflow the solder to the electrode. The pad 400 is formed so that a plurality of flip-chip solders for electrically connecting the semiconductor wafer 400 to the circuit board 300 are formed between the semiconductor wafer 400 and the board 300. ^ In another embodiment of the present invention, the solder bump 31 ° f: the circuit board 3 0 0 can be applied to a semiconductor wafer having a metal bump to form a coating. As shown in FIG. 10, the semiconductor wafer 501 has A plurality of electrodes and stems 3 are formed on the active surface of the semiconductor wafer 501. The electrode pad has a plurality of metal bumps 502 for forming flip-chip solder joints. The semiconductor wafer 501 is made of the metal bumps. 502 are arranged on the circuit board 300 in a manner corresponding to the positions of the solder bumps 310 of the circuit board 300 respectively. Then, as shown in FIG. 10B, the solder bump 3 丨 0 is re-soldered to the metal bump 502 to form a flip-chip solder between the semiconductor wafer 5〇 丨 and the circuit board 30.00. Connect 5 04. The metal bump 502 can be made of metal, alloy, or a combination of several metals, such as solder bumps, gold bumps, copper bumps, or copper pillars covered with solder caps. And the metal bumps can be of any shape, such as stud bumps, spherical bumps, pillar bumps, or other shapes of bumps. According to the present invention, the circuit board can also be used to form flip-chip solders at the same time. And board-to-board soldering. In this embodiment, the circuit board 2 0 with solder bumps 2 1 0 will be used for illustration. As shown in FIG. 1 a, a circuit board 6 0 is prepared. 0 (hereinafter referred to as a "second circuit board"), the circuit board may be an organic or ceramic circuit board, and the wafer 6 0 2 is disposed at an appropriate position close to the circuit board; at the second circuit board 6 0 0, put several contact pads 6 0 1

$4s〇98$ 4s〇98

(12) 友、發明說明 也成於該晶片6 0 2的周緣,其中,多個金屬凸塊6 〇 4、6 0 5 你分別形成於該第二電路板6 〇 〇之該接觸銲墊6 〇 1以及該晶 片6 0 2之電極銲墊β 〇 3上。然後,將該第二電路板6 〇 〇藉由 使其金屬凸塊6 0 4、6 0 5朝向形成於該電路板2 〇 〇 (於後文中 辑為π第一電路板”)上之銲錫凸塊2 1 〇的方式,設置於該第 電路板2 0 0。如第1 1 Β圖所示,使該金屬凸塊6 〇 4、6 〇 5分 剐迴銲至相對應的銲錫凸塊21〇,以於該晶片6〇2以及該第 〜電路板2 0 0之間形成覆晶銲錫接6〇6,並於該第二電路板 ^ 0 0以及该第一電路板2 0 〇之間形成板對板之銲錫接6 〇 7。 碡金屬凸塊6 0 4、6 0 5可由金屬、合金、或疊合數種金屬所 構成,例如銲錫凸塊、金凸塊、銅凸塊或以銲錫帽覆蓋之 鋼柱等;且該金屬凸塊可為任何形狀,例如釘柱狀凸=、 球形凸塊、柱狀凸塊或其他形狀之凸塊。 Α 請參照第1 2Α圖,根據本發明可以使用第4人圖中所示 之電路板2 0 0的類似製程,形成用作為製造覆晶構裝 7 1 〇 (如第1 2C圖所示)之基板或晶片承載件的有機電路板 7 0 0。該電路板7 0 0係藉由未使用絕緣保護層之相似的方法 製造,並分別於該電路板之上、下表面7〇4、7〇5形成數個 接觸銲墊70卜7 0 2。請參照第12B圖,藉由鍍覆的方法, 在該接觸銲墊7 0 1上形成數個銲錫凸塊7 〇 3。請參照第丄2 c 圖,將晶片7 0 6以覆晶方式設置於該電路板7 〇 〇,該罗曰 的設置方式係使形成於該晶片7 0 6之電極銲墊7〇7鮮$ $ 成於該電路板7 0 0之該銲錫凸塊7 〇 3 ;然後,以底膠 y 7 0 9填充於該晶片7 0 6以及該電路板7〇〇之間的間隙>中;"+接(12) The description of the invention is also formed on the periphery of the wafer 602, in which a plurality of metal bumps 604, 605 are respectively formed on the contact pads 6 of the second circuit board 600. 〇1 and electrode pad β 〇3 of the wafer 602. Then, the second circuit board 600 is formed with the metal bumps 604 and 605 facing the solder formed on the circuit board 2000 (hereinafter referred to as "π first circuit board"). The method of the bump 2 1 0 is provided on the second circuit board 200. As shown in FIG. 1B, the metal bumps 6 and 4 are re-soldered to the corresponding solder bumps. 21〇, so that a flip chip solder joint 606 is formed between the wafer 602 and the first circuit board 200, and between the second circuit board ^ 0 0 and the first circuit board 2 0 0 The board-to-board solder joints are formed between 6 and 07. 碡 Metal bumps 604, 605 can be composed of metals, alloys, or a combination of several metals, such as solder bumps, gold bumps, copper bumps, or Steel pillars covered with solder caps, etc .; and the metal bumps can be of any shape, such as studs, spherical bumps, columnar bumps, or other shapes of bumps. Α Please refer to Figure 1 2Α, according to In the present invention, a similar process of the circuit board 200 shown in the fourth figure can be used to form a substrate or wafer carrier for manufacturing a flip-chip structure 7 1 0 (as shown in FIG. 12C). Piece of organic circuit board 700. This circuit board 700 is manufactured by a similar method without the use of an insulating protective layer, and is formed on the upper and lower surfaces of the circuit board 704 and 705 respectively. The contact pad 70b 7 0 2. Please refer to FIG. 12B, and a plurality of solder bumps 7 0 3 are formed on the contact pad 7 0 1 by a plating method. Referring to FIG. 2c, The wafer 706 is placed on the circuit board 700 in a flip-chip manner, and the Luo Yue arrangement is such that the electrode pads 7007 formed on the wafer 706 are formed on the circuit board 7 0 0 The solder bump 7 03; then, a gap y 7 0 9 is used to fill the gap between the wafer 7 06 and the circuit board 7 0 > + quot

545098545098

545098 五、發明說明(14) 如第1 3 C圖所示’可於該電路板8 〇 〇之上表面8 〇 3以及 下表面8 0 4上’施用絕緣保護層8 2 1以覆蓋該導電線8 0 1 ; 惟,該絕緣保護層8 2 1會使該接觸銲墊8 〇 5以及凸塊區域 (如第1 3 B中所示,該虛線8 0 7所包含之區域)曝露出來。然 後,將具有電極銲墊8 1 0之晶片8 0 9設置於該電路板8 0 0, 並以底膠材料8 1 2填充於該晶片8 0 9以及該電路板8 0 0之間 的間隙中。最後,將外部端8丨丨(例如,銲球、引腳或金屬 柱等)接设至位於該電路板8 〇 〇之下表面§ 〇 4的接觸銲墊8 〇 5 上,從而完成該覆晶構裝8 1 3。另一方面,如第i 3D圖所 示’可於各個接觸銲塾8 0 5上形成表面塗層8 1 4 (例如, 金、鎳/金或可銲的有機防護劑(〇sp)等),並於該導電線 t0i、8 0 6上形成表面塗層815(例如,金、鎳/金或環氧樹 月曰等)以防止腐蝕。再者,如第i 3E圖所示,另一種選擇係 在位於该電路板8 〇 〇之上表面8 0 3的各個導電線8 〇 1上形成 表面塗層8 1 8 (例如,〇Sp、環氧樹脂、金、鎳/金等),以 及在,電路板80 〇之下表面8〇4上覆蓋一層絕緣保護層816 以復盍忒導電線8 〇 6 ;惟,該絕緣保護層8丨6係透過多個形 成於4保‘層上的開孔8 1 7而將该接觸銲塾8 〇 $曝露出來。 綜上所述,本發明已藉由較佳具體實例詳細說明。然 而,應,f的是,本發明並非僅侷限於所揭示之實例。本 發明之犯駕應涵蓋未悖離下列申請專利範圍所界定之精神 下所為之修飾以及變化。545098 V. Description of the invention (14) As shown in Fig. 1 3C, 'the upper surface of the circuit board 8 00 and the lower surface 8 0 4' can be applied with an insulating protective layer 8 2 1 to cover the conductive The line 8 0 1; however, the insulating protective layer 8 2 1 will expose the contact pad 8 05 and the bump area (the area included by the dotted line 8 07 as shown in FIG. 13B). Then, a wafer 8 0 9 having an electrode pad 8 10 is set on the circuit board 8 0, and a gap between the wafer 8 9 and the circuit board 8 0 0 is filled with a primer material 8 1 2. in. Finally, the external terminal 8 (such as a solder ball, a pin, or a metal post, etc.) is connected to the contact pad 8 05 located on the surface § 〇4 of the lower surface of the circuit board 8 to complete the coating.晶 结构 装 8 1 3. On the other hand, as shown in FIG. 3D, a surface coating 8 1 4 (eg, gold, nickel / gold or a solderable organic protective agent (〇sp), etc.) can be formed on each contact welding pad 8 0 5. A surface coating 815 (for example, gold, nickel / gold, or epoxy resin) is formed on the conductive lines t0i and 806 to prevent corrosion. Further, as shown in FIG. 3E, another option is to form a surface coating 8 1 8 on each conductive wire 8 0 1 on the surface 8 0 3 of the circuit board 8 0 (for example, 0 Sp, Epoxy resin, gold, nickel / gold, etc.), and an insulating protective layer 816 is covered on the surface 804 below the circuit board 80 to restore the conductive wire 8 06; however, the insulating protective layer 8 丨The 6-series exposed the contact pad 8O $ through a plurality of openings 8 1 7 formed in the 4A 'layer. In summary, the present invention has been described in detail with reference to preferred specific examples. However, it should be noted that the present invention is not limited to the disclosed examples. The offense of the present invention should cover modifications and variations that do not depart from the spirit defined by the scope of the following patent applications.

β1 16°74.ptd 第19頁 545098 圖式簡單說明 [圖式簡單說明] 第1 A及1 B圖係顯示一種習知覆晶元件之製程的截面概 示圖; 第2 A及2 B圖係顯示另一種習知覆晶元件之製程的截面 概示圖; 第3圖係顯示一種具有絕緣保護層之習知電路板的截 面圖; 第4A及4B圖係分別顯示根據本發明實例之電路板的截 面圖 ; 第5A及5B圖係分別顯示在第4A圖所示之電路板上形成 凸塊之製程的截面概示圖; 第6A及6B圖係分別顯示在第4B圖所示之電路板上形成 凸塊之製程實例的截面概示圖; 第7A及7B圖係分別顯示在第4B圖所示之電路板上形成 凸塊之另一製程實例的截面概示圖; 第8圖係根據本發明將催化層塗覆至電路板之接觸銲 塾的截面圖; 第9 A及9 B圖係根據本發明之實例,形成覆晶銲錫接之 迴銲製程的截面概示圖; 第1 0 A及1 0 B圖係根據本發明之另一實例,形成覆晶銲 錫接之迴銲製程的截面概示圖; 第1 1 A及1 1 B圖係根據本發明之實例,形成覆晶銲錫接 以及板對板之銲錫接之迴銲製程的截面概示圖; 第1 2 A至1 2 C圖係根據本發明使用鍍覆銲錫的技術,形β1 16 ° 74.ptd Page 19 545098 Brief description of drawings [Simplified description of drawings] Figures 1 A and 1 B are schematic cross-sectional views showing the process of a conventional flip chip device; Figures 2 A and 2 B Fig. 3 is a schematic cross-sectional view showing a process of another conventional flip-chip device; Fig. 3 is a cross-sectional view of a conventional circuit board with an insulating protective layer; Figs. 4A and 4B are respectively a circuit according to an example of the present invention Sections of the board; Figures 5A and 5B are schematic cross-sectional views showing the process of forming bumps on the circuit board shown in Figure 4A; Figures 6A and 6B are the circuits shown in Figure 4B respectively A schematic cross-sectional view of an example of a process for forming bumps on a board; FIGS. 7A and 7B are schematic cross-sectional views of another example of a process for forming bumps on a circuit board shown in FIG. 4B; Cross-sectional views of a contact solder pad with a catalytic layer applied to a circuit board according to the present invention; Figures 9 A and 9 B are schematic cross-sectional views of a reflow process for forming a flip-chip solder joint according to an example of the present invention; Figures 0 A and 1 0 B are reflow soldering processes for forming flip-chip solder joints according to another example of the present invention. Figures 1 1 A and 1 1 B are schematic cross-sectional views of the reflow process for forming flip-chip solder joints and board-to-board solder joints according to examples of the present invention; Figure 1 C is a diagram of the technique of using plated solder in accordance with the present invention.

16^74.pid 第20頁 545098 圖式簡單說明 成覆晶構裝之製程的截面概示圖; 第1 2 D及1 2 E圖係分別顯示根據本發明另一實例之電路 板的截面圖, 第1 3 A圖係顯示根據本發明又一實例之電路板的截面 圖, 第1 3 B圖係第1 3 A圖所示之電路板的俯視圖; 第1 3 C圖係顯示根據本發明使用鍍覆銲錫的技術,形 成覆晶銲錫接之覆晶構裝的截面圖;以及 第1 3 D及1 3 E圖係分別顯示根據本發明又一實例之電路 板的截面圖。 1 覆 晶 元 件 1, 覆 晶 元 件 11 金 屬 凸 塊 12 電 極 銲 墊 13 晶 片 14 預 銲 錫 凸 塊 15 接 觸 銲 墊 16 有 機 電 路 板 17 銲 錫 接 18 底 膠 材 料 19 銲 錫 凸 塊 100 有 機 電 路 板 101 接 觸 銲 墊 102 絕 緣 層 103 金 屬 阻 障層 104 絕 緣 保 護 層 105, 106,: 【08電路層 107 導 孔 109 銲 墊 間 隙 110 預 銲 錫 凸 塊 111 接 觸 面 積 200 電 路 板 201 第 一 電 路層 202 第 二 電 路 層 203 導 孔 204 接 觸 銲 塾16 ^ 74.pid Page 20 545098 Schematic cross-sectional view briefly explaining the process of forming a flip-chip structure; Figures 1 2 D and 1 2 E are sectional views showing a circuit board according to another example of the present invention, respectively. FIG. 1 A is a cross-sectional view of a circuit board according to another example of the present invention, and FIG. 1 B is a top view of the circuit board shown in FIG. Cross-sectional views of a flip-chip structure with a flip-chip solder joint are formed using the technique of plating solder; and the 13D and 1E diagrams are cross-sectional views showing a circuit board according to yet another example of the present invention. 1 Flip-chip component 1, Flip-chip component 11 Metal bump 12 Electrode pad 13 Wafer 14 Pre-solder bump 15 Contact pad 16 Organic circuit board 17 Solder connection 18 Primer material 19 Solder bump 100 Organic circuit board 101 Contact solder Pad 102 Insulation layer 103 Metal barrier layer 104 Insulation protection layer 105, 106 ,: [08 circuit layer 107 via hole 109 pad gap 110 pre-solder bump 111 contact area 200 circuit board 201 first circuit layer 202 second circuit layer 203 vias 204 contact pads

16974.ptcl 第21頁 545098 圖式簡單說明 205 絕緣層 207 阻層 209 銲錫材料 300 有機電路板 302 導孔 304 第二電路層 306 導電晶種層 308 開孔 310 銲錫凸塊 312 銲錫凸塊 402 電極鲜塾 501 半導體晶片 503 電極銲墊 601 接觸銲墊 603 電極銲墊 606 覆晶銲錫接 701, 7 〇 2接觸銲塾 704 上表面 706 晶片 708 外部端 710 覆晶構裝 722 開孔 732 表面塗層 801, 8 0 6導電線 層 種 晶 電孔 導開 6 8 ο ο 210 銲 錫 凸 塊 301 接 觸 銲 墊 303 第 一 電 路 層 305 絕 緣 層 307 阻 層 309 銲 錫 材 料 311 金 屬 墊 401 半 導 體 晶 片 403 覆 晶 銲 錫 接 502 金 屬 凸 塊 600 第 二 電 路 板 602 晶 片 6 0 4, 6 0 5金屬凸塊 700 有 機 電 路 板 703 銲 錫 凸 塊 705 下 表 面 707 電 極 銲 墊 709 底 膠 材 料 721 絕 緣 保 護 層 731 導 電 線 800 有 機 電 路 板 802 接 觸 銲 墊16974.ptcl Page 21 545098 Brief description of the diagram 205 Insulation layer 207 Resistance layer 209 Solder material 300 Organic circuit board 302 Via hole 304 Second circuit layer 306 Conductive seed layer 308 Opening hole 310 Solder bump 312 Solder bump 402 Electrode Fresh 501 semiconductor wafer 503 electrode pad 601 contact pad 603 electrode pad 606 flip chip solder 701, 7 〇2 contact pad 704 upper surface 706 wafer 708 outer end 710 crystal structure 722 opening 732 surface coating 801, 8 0 6 Conductive wire layer seed hole 6 8 ο ο 210 Solder bump 301 Contact pad 303 First circuit layer 305 Insulation layer 307 Resistive layer 309 Solder material 311 Metal pad 401 Semiconductor wafer 403 Chip-on-chip solder Connect 502 metal bump 600 second circuit board 602 wafer 6 0 4, 6 0 5 metal bump 700 organic circuit board 703 solder bump 705 lower surface 707 electrode pad 709 primer material 721 insulation protection layer 731 conductive wire 800 organic Circuit board 802 contact pad

16974.ptd 第22頁 54509816974.ptd Page 22 545098

圖式簡單說明 803 上表面 804 下表面 805 接觸銲墊 807 虛線 808 銲錫凸塊 809 晶片 810 電極銲墊 811 外部端 812 底膠材料 813 覆晶構裝 814, 815,818表面塗層 816 絕緣保護層 817 開孔 821 絕緣保護層 16974.p;cl 第23頁Brief description of the drawing 803 Upper surface 804 Lower surface 805 Contact pad 807 Dotted line 808 Solder bump 809 Wafer 810 Electrode pad 811 External end 812 Primer material 813 Crystal structure 814, 815, 818 Surface coating 816 Insulation protective layer 817 Open Hole 821 Insulating protective layer 16974.p; cl Page 23

Claims (1)

545098 六、 申請專利範圍 1. 一 種 具 有 鍍 銲 錫 之 微銲墊間距有 機電路 板, 係包括: 至 少 一 表 面 用以使銲錫接 (sold er j ( 3 i n t)形成 於 其 上 至 少 一 接 觸 銲 墊,係形成於 該表面 上, 且該表面 並 未 形 成 有 絕 緣 保 護層(solder mask 1 ay e] Γ );以及 一 鍍 銲 錫 (plating solder) 丨,係沈 積於 該接觸銲 墊 上 〇 2. 如 中 請 專 利 範 圍 第 1項之電路板, 其中 ’該鐘鲜錫係猎 由 電 鍍 所 形 成 之 銲 錫。 3. 如 中 請 專 利 範 圍 第 1項之電路板, 其中 ,該鍍銲錫係藉 由 無 電 鍍 所 形 成 之 銲錫。 4. 如 中 請 專 利 範 圍 第 1項之電路板, 其中 ,該鐘銲錫係以 結 合 電 鍍 以 及 Μ 電 鍍之方法所形 成之銲 錫。 5. 如 中 請 專 利 >λ-/γ 靶 圍 第 1項之電路板, 其中 ,該電路板之表 面 上 並 無 任 何 導 電 線(conductiv e trace ) 〇 6. _一 種 具 有 鍍 銲 錫 之 微銲墊間距有 機電路 板, 該電路板 包 括 • 至 少 表 面 用以使銲錫接 形成於 其上 9 至 少 兩 接 觸 銲 墊,係形成於 該表面 上, 且未形成 有 絕 緣 保 護 層 及 導 電線於該銲墊 間;以 及 一 鍍 銲 錫 係 沈積於該接觸 銲墊上 〇 7. 如 中 請 專 利 範 圍 第 6項之電路板, 其中 ,該鍍銲錫係藉 由 電 鍍 所 形 成 之 鮮 錫。 8. 如 中 請 專 利 摩巳 圍 第 6項之電路板, 其中 ,該鍍銲錫係藉545098 VI. Application Patent Scope 1. A micro-pad pitch organic circuit board with plated solder, comprising: at least one surface for soldering (solder j (3 int) formed on at least one contact pad, Is formed on the surface, and the surface is not formed with an insulating protection layer (solder mask 1 ay e) Γ; and a plating solder (plating solder), which is deposited on the contact pads. The circuit board of the first scope of the patent, wherein 'the bell fresh tin is a solder formed by electroplating. 3. The circuit board of the first scope of the patent, wherein the solder is formed by electroless plating 4. For example, please refer to the circuit board in item 1 of the patent scope, wherein the bell solder is a solder formed by a combination of electroplating and M electroplating. 5. As a patent, please refer to λ- / γ target range. The circuit board of item 1, wherein there is no task on the surface of the circuit board Ho conductive wire (conductiv e trace) 〇6. _ A micro-pad pitch organic circuit board with solder plating, the circuit board includes • at least a surface for solder to be formed thereon 9 at least two contact pads, forming On the surface, there is not formed an insulating protective layer and a conductive wire between the pads; and a plated solder is deposited on the contact pads. 7. The circuit board of item 6 of the patent scope, wherein, the Solder-plated solder is fresh tin formed by electroplating. 8. Please refer to the patent No. 6 Circuit Board of Capricorn, where the solder-plated solder is borrowed 16974.ptcl 第24頁 545098 六、申請專利範圍 由無電鍍所形成之銲錫。 9.如申請專利範圍第6項之電路板,其中,該鍍銲錫係以 結合電鍍以及無電鍍之方法所形成之銲錫。 1 0. —種具有鍍銲錫之微銲墊間距有機電路板之製造方 法,該方法包括: 提供一有機電路板,該電路板包含一表面,並於 該表面形成有至少一接觸銲墊,且該表面並未覆蓋有 絕緣保護層; 在該電路板表面上形成導電晶種層, 在該導電晶種層上沈積阻層,並於該阻層相對應 於該銲墊處形成有至少一開孔; 經由鑛覆(p 1 a t i n g )的方法將銲錫材料沈積於該開 孔;以及 移除該阻層與該阻層下之導電晶種層。 1 1.如申請專利範圍第1 0項之方法,其中,該導電晶種層 係由選自銅、錫及錫-鉛合金所構成之組群之金屬所形 成。 1 2 .如申請專利範圍第1 0項之方法,其中,該導電晶種層 係一多層結構。 1 3 .如申請專利範圍第1 2項之方法,其中,該多層結構係 由選自銅、錫、鎳、鉻、鈦、銅-鉻合金及錫-船合金 所構成之組群之金屬所形成。 1 4.如申請專利範圍第1 0項之方法,其中,該銲錫材料係 由選自錯、錫、銀、銅、银、録、鋅、錄、I呂、鎂、16974.ptcl Page 24 545098 6. Scope of patent application Solder formed by electroless plating. 9. The circuit board according to item 6 of the patent application, wherein the solder plating is a solder formed by a combination of electroplating and electroless plating. 1 0. A method for manufacturing a micro-pad pitch organic circuit board with solder plating, the method includes: providing an organic circuit board, the circuit board includes a surface, and at least one contact pad is formed on the surface, and The surface is not covered with an insulating protection layer; a conductive seed layer is formed on the surface of the circuit board, a resistive layer is deposited on the conductive seed layer, and at least one opening is formed at the resistive layer corresponding to the pad. Holes; depositing solder material on the openings by a method of p 1 ating; and removing the resist layer and the conductive seed layer under the resist layer. 1 1. The method according to item 10 of the scope of patent application, wherein the conductive seed layer is formed of a metal selected from the group consisting of copper, tin, and a tin-lead alloy. 12. The method of claim 10, wherein the conductive seed layer has a multilayer structure. 13. The method according to item 12 of the scope of patent application, wherein the multilayer structure is made of a metal selected from the group consisting of copper, tin, nickel, chromium, titanium, copper-chromium alloy, and tin-boat alloy. form. 14. The method according to item 10 of the scope of patent application, wherein the solder material is selected from the group consisting of copper, tin, silver, copper, silver, zinc, zinc, zinc, magnesium, 16974.ptd 第25頁 545098 六、申請專利範圍 銦、碲及鎵所構成之組群之元素的混合物所形成之合 金。 1 5 .如申請專利範圍第1 0項之方法,其中,該鍍覆方法為 電鍍法。 1 6 .如申請專利範圍第1 0項之方法,其中,該鍍覆方法為 無電鍍法。 1 7 .如申請專利範圍第1 0項之方法,其中,該鍍覆方法係 結合電鍍法以及無電鍍法。 1 8 .如申請專利範圍第1 0項之方法,復包括於該銲錫材料 沈積於該開口前,在該接觸銲墊上形成金屬墊之步驟 〇 1 9. 一種具有鍍銲錫之微銲墊間距有機電路板之製造方法 ,該方法包括: 提供一有機電路板,該電路板包含一表面,並於 該表面形成有至少兩接觸銲墊,且該表面並未形成有 絕緣保護層與導電線於該銲墊間; 在該表面上形成導電晶種層, 在該導電晶種層上沈積阻層,並於該阻層相對應 於該銲墊處形成有至少兩開孔; 經由鍍覆的方法將銲錫材料沈積於該開孔;以及 移除該阻層與該阻層下之導電晶種層。 2 0 .如申請專利範圍第1 9項之方法,其中,該導電晶種層 係由選自銅、錫及錫-斜合金所構成之組群織金屬所形 成。16974.ptd Page 25 545098 VI. Scope of patent application Alloy formed by a mixture of elements of the group consisting of indium, tellurium and gallium. 15. The method according to item 10 of the scope of patent application, wherein the plating method is an electroplating method. 16. The method according to item 10 of the scope of patent application, wherein the plating method is an electroless plating method. 17. The method according to item 10 of the scope of patent application, wherein the plating method is a combination of electroplating and electroless plating. 18. The method according to item 10 of the scope of patent application, further comprising the step of forming a metal pad on the contact pad before the solder material is deposited in the opening. 9. A micro-pad pitch with plated solder is organic. A method for manufacturing a circuit board, the method includes: providing an organic circuit board, the circuit board includes a surface, and at least two contact pads are formed on the surface, and the surface is not formed with an insulating protective layer and conductive wires. Between pads; a conductive seed layer is formed on the surface, a resist layer is deposited on the conductive seed layer, and at least two openings are formed at the resist layer corresponding to the pad; A solder material is deposited in the opening; and the resist layer and the conductive seed layer under the resist layer are removed. 20. The method according to item 19 of the patent application scope, wherein the conductive seed layer is formed of a group woven metal selected from the group consisting of copper, tin and tin-slanted alloy. 10974.ptd 第26頁 545098 六、申請專利範圍 2 1.如申請專利範圍第1 9項之方法,其中,該導電晶種層 係一多層結構。 2 2 .如申請專利範圍第2 1項之方法,其中,該多層結構係 由選自銅、錫、錄、絡、欽、銅-絡合金及錫-錯合金 所構成之組群之金屬所形成。 2 3 .如申請專利範圍第1 9項之方法,其中,該銲錫材料係 由選自雜、鍚、銀、銅、麵、綈、鋅、鎳、銘、鎭、 銦、締及鎵所構成之組群之元素的混合物所形成之合 金。 2 4 .如申請專利範圍第1 9項之方法,其中,該鍍覆方法為 電鍍法。 2 5 .如申請專利範圍第1 9項之方法,其中,該鍍覆方法為 無電鍍法。 2 6 .如申請專利範圍第1 9項之方法,其中,該鍍覆方法係 結合電鍍法以及無電鍍法。 2 7 .如申請專利範圍第1 9項之方法,復包括於該銲錫材料 沈積於該開口前,在該接觸銲墊上形成金屬墊之步驟 〇 2 8. —種具有鍍銲錫之微銲墊間距有機電路板之製造方法 ,該方法包括: 提供一有機電路板,該電路板包含一表面,並於 該表面上形成至少一接觸銲墊,且該表面並未覆蓋有 絕緣保護層; 在該電路板表面上沈積阻層,並於該阻層相對應10974.ptd Page 26 545098 6. Scope of patent application 2 1. The method according to item 19 of the patent application scope, wherein the conductive seed layer has a multilayer structure. 22. The method according to item 21 of the scope of patent application, wherein the multilayer structure is made of a metal selected from the group consisting of copper, tin, copper, copper, copper, copper-copper alloys, and tin-copper alloys. form. 2 3. The method according to item 19 of the scope of patent application, wherein the solder material is composed of a substance selected from the group consisting of impurity, gadolinium, silver, copper, surface, hafnium, zinc, nickel, indium, gadolinium, indium, titanium and gallium. An alloy formed by a mixture of elements of a group. 24. The method according to item 19 of the scope of patent application, wherein the plating method is an electroplating method. 25. The method according to item 19 of the scope of patent application, wherein the plating method is an electroless plating method. 26. The method according to item 19 of the patent application scope, wherein the plating method is a combination of electroplating and electroless plating. 27. The method according to item 19 of the scope of patent application, further comprising the step of forming a metal pad on the contact pad before the solder material is deposited in the opening. 0 8. A micro-pad pitch with plated solder A method for manufacturing an organic circuit board. The method includes: providing an organic circuit board, the circuit board including a surface, and forming at least one contact pad on the surface, and the surface is not covered with an insulating protective layer; A resist layer is deposited on the surface of the board and corresponds to the resist layer 16974.piJ 第27頁 545098 六、申請專利範圍 於該銲墊處 經由無 及 移除該 2 9 ·如申請專利 由選自鉛、 銦、碲及鎵 金。 3 0 ·如申請專利 沈積前,將 步驟。 31 ·如申請專利 雀巴粒子所形 3 2 · —種具有鍍 ,該方法包 提供一 該表面上形 有絕緣保護 在該電 於該銲墊處 經由無 及 移除該 3 3 .如申請專利 形成有至少一開孔; 電鍍的 方法將銲錫材料沈積於該開孔; 以 阻層。 範圍第 錫、銀 所構成 範圍第 催化層 範圍第 成。 銲錫之 括: 有機電 成有至 層與導 路板表 形成有 電錢的 阻層。 範圍第 2 8項之方法,其中,該鮮錫材料係 、銅、鉍、銻、鋅、鎳、鋁、鎂、 之組群之元素的混合物所形成之合 2 8項之方法,復包括於該銲錫材料 (CatalytlC laYer)沈積於該開孔之 30項之方法’“,該催化層係由 微銲墊間距有機電路板之製造方法 路板’ I玄電路板包含一表面 少兩接觸銲墊,R # 士 亚於 電線於該銲墊間· /、面並未形成 面上沈積阻層,并_ 亚於該阻層ia m + 至少兩開孔; / 1續相對應 方法將銲錫材料 此積於該開孔; 以 3 2項之方法, 其中, δ亥銲錫材料係16974.piJ Page 27 545098 6. Scope of patent application At the pad, remove and remove the 2 9 · If applying for a patent, it is selected from lead, indium, tellurium and gallium gold. 3 0 · If applying for a patent, the steps will be carried out before deposition. 31 · As the patented fin particles 3 2 ·-has a plating, the method package provides a surface with insulation protection on the surface of the pad by removing and removing the 3 3. At least one opening is formed; a method of electroplating deposits solder material on the opening; and resists the layer. The range is composed of tin and silver. The range is composed of catalytic layers. Soldering includes: Organic electricity to the layer and the surface of the circuit board to form a resistive layer of money. The method of the 28th item, wherein the fresh tin material is a method of the 28th item formed by a mixture of elements of the group of copper, bismuth, antimony, zinc, nickel, aluminum, magnesium, and the group, further including The method of depositing the solder material (CatalytlC laYer) on the 30 holes of the opening '", the catalytic layer is a method of manufacturing a micro-pad pitch organic circuit board, and the circuit board includes a surface with less two contact pads. R # Shiya deposits a resistive layer on the wire between the solder pads. /, The surface does not form a resistive layer on the surface, and _ Yar + at least two openings in the resistive layer; / 1 Continue the corresponding method to solder the material Accumulate in the opening; by the method of item 32, wherein the delta solder material is 16974.Pid 第28頁 545098 六、申請專利範圍 由選自錯、鍚、銀、銅、麵、録、鋅、錄、銘、鎮、 銦、碲及鎵所構成之組群之元素的混合物所形成之合 金。 3 4 .如申請專利範圍第3 2項之方法,復包括於該銲錫材料 沈積前,將催化層(c a t a 1 y t i c 1 a y e r )沈積於該開孔之 步驟。 3 5 .如申請專利範圍第3 4項之方法,其中,該催化層係由 I巴粒子所形成。16974.Pid Page 28 545098 6. The scope of the patent application is a mixture of elements selected from the group consisting of erbium, gadolinium, silver, copper, noodles, zinc, zinc, zinc, inscriptions, towns, indium, tellurium and gallium. Formed alloy. 34. The method according to item 32 of the scope of patent application, further comprising the step of depositing a catalytic layer (c a t a 1 y t i c 1 a y e r) on the opening before the solder material is deposited. 35. The method of claim 34, wherein the catalytic layer is formed of I bar particles. 16974.ptd 第29頁16974.ptd Page 29
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