TW200409575A - Fine pad pitch organic circuit board with plating solder and method for fabricating the same - Google Patents

Fine pad pitch organic circuit board with plating solder and method for fabricating the same Download PDF

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TW200409575A
TW200409575A TW91134574A TW91134574A TW200409575A TW 200409575 A TW200409575 A TW 200409575A TW 91134574 A TW91134574 A TW 91134574A TW 91134574 A TW91134574 A TW 91134574A TW 200409575 A TW200409575 A TW 200409575A
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circuit board
solder
scope
patent application
item
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TW91134574A
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TW545098B (en
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I-Chung Tung
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Phoenix Prec Technology Corp
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Abstract

A fine pad pitch organic circuit board with plating solder and a method for fabricating the circuit board with plating solder are provided. The circuit board is formed with a plurality of densely arranged contact pads on at least a surface thereof in the absence of solder mask being applied over the surface. After deposition of a conductive seed layer on the contact pads, a resist layer is applied over the surface of the circuit board, and formed with a plurality of openings for exposing the seed layer corresponding in position to the contact pads. Then, a solder material is deposited in the openings by a plating method. Finally, the resist layer and the seed layer underneath the resist layer are removed, making the circuit board readily subject to subsequent fabrication processes for forming flip-chip joints or board-to-board joints.

Description

200409575 .五、發明說明(1) ---一 -- r [發明所屬之技術領域] 子^♦明係有關於〜種用於電子封裝件且具有鍍銲錫之 既 ^ 乃去;具體而言,係有關於一種具有鍍銲 、’之4 1干塾間距有機電路板,該鍍銲錫係用以形成覆晶銲 錫接以及板對板之銲錫接,以及關於一種製造該具有鍍銲 錫之微鲜塾間距有機電路板之方法。 [先前技術] — 自從ίβΜ公司在i 9 6 0年早期引入覆晶封裝(flip Chip ~ package)技術以來,由於矽晶片與陶瓷基板間的熱膨脹係 數差較小’故覆晶元件主要係設置於價格昂貴的陶瓷基板 上。相較於打線(wire bond)技術,覆晶技術之特徵係在 於晶片與基板間的電性連接係透過銲錫凸塊而非打線。而 該種覆晶技術之優點在於,該技術可提高封裝密度以降低 元件輪廓;同時,該種覆晶技術不需使用長度較長之金屬 線,故可提高電性性能。有鑑於此,業界在陶瓷基板上使 用高溫銲錫,即所謂控制崩解之晶片連接技術 (control -col 1 apse chip connect i 〇n, C4)5 已有 4 0年之 久。然而近年來,由於需要高密度、高速度以及低成本之 半導體元件’及為因應電子產品之體積逐漸縮小的趨勢, -將覆晶元件設置於低成本的有機電路板(例如,印刷電路 -板或基板),並以環氧樹脂底膠(UnderflU resin)填充於 晶片下方以減少石夕晶片與有機電路板之結構間因熱膨脹差 異所產生的熱應力,已王現爆炸性的成長。而業界所矚目 的低溫覆晶詳錫接以及有機電略板之 以大幅200409575. V. Description of the invention (1) ------[Technical field to which the invention belongs] ^ ^ The Ming is related to ~ types used in electronic packages and have solder plating ^ are gone; specifically The invention relates to an organic circuit board with a plated solder, a 4 1 dry pitch, the plated solder is used to form a flip-chip solder joint and a board-to-board solder joint, and relates to a method for manufacturing the micro-fresh plated solder.塾 Pitch method of organic circuit board. [Prior technology] — Since ίβΜ introduced flip chip ~ package technology in early 960, because the difference in thermal expansion coefficient between the silicon wafer and the ceramic substrate is small, so the flip chip is mainly installed in Expensive ceramic substrate. Compared with wire bond technology, flip chip technology is characterized in that the electrical connection between the chip and the substrate is through solder bumps instead of wire bonding. The advantage of this flip-chip technology is that this technology can increase the packaging density to reduce the component outline; at the same time, this flip-chip technology does not require the use of longer metal wires, so it can improve electrical performance. In view of this, the industry has used high-temperature solder on ceramic substrates, the so-called control-col 1 apse chip connect technology (C4) 5 for 40 years. However, in recent years, due to the need for high-density, high-speed, and low-cost semiconductor components, and in response to the gradual shrinking of electronic products,-flip-chip devices are provided on low-cost organic circuit boards (for example, printed circuit boards) Or substrate), and filled with epoxy resin primer (UnderflU resin) under the wafer to reduce the thermal stress caused by the difference in thermal expansion between the structure of the Shixi wafer and the organic circuit board, has been explosive growth. The industry's attention to low-temperature flip-chip soldering

16974·ptd ^ 6頁 --·~--- 五、發明說明(2) 覆晶元件之製造成本。 在現行的低成本覆s 身 片的表面上配置有電性:電極:墊f導體積體電路(K)晶 板之間可以使用^ 的接觸銲墊。在該晶片以及電路 著材料。該晶片俜=二地5又置低溫銲錫凸塊或其他導電黏 板上,其中性接觸面朝下的方式設置於該電路 電路板間的電;黏著材料提供… 錫凸塊銲錫接(s 〇丨d e r 0 )以及機械性的連接。就銲 晶片以及該電路板間二二:p二1nt)而言,可進—步在該 片以及該電路板間的熱膨胳、,二入有機底膠,以抑制該晶 第1 A及1 B圖中係說明^是亚降低該銲錫接的應力。 錫接係經由結合金屬 了種習知的覆晶元件,其中,銲 中所示,數個金屬凸▲二及預銲錫凸塊而形成者。如圖 上,以及數個由低溫銲 ^成於晶片1 3之電極銲墊1 2 ^機電路板16之接觸銲养衣成的預銲錫凸塊14係形成於 熔融之迴銲溫度條件^ 上。在足以使該預銲錫凸塊1 4 應之金屬凸塊1 1即可形忠=由將預銲錫凸塊Η迴銲至相對 充填於該晶片1 3以及誃恭鋅錫接1 7。然後,將底膠材料1 8 锡接丨7包覆於其中,即^路板丨6之間的間隙中,並將該銲 說明另一種未使用預銲:成覆晶元件卜第2A以及2B圖係 示,教個銲錫凸塊1 9係=塊的覆晶元件1,。如圖中所 者,使晶片1 3迴銲至電^成於晶片1 3之電極銲墊1 2上。接 至該電路板1 6之接觸銲|板^ 1 6 ;其中,該銲錫凸塊1 9銲接 塾15而形成銲錫接ι7。最後,以底16974 · ptd ^ page 6 --- ~ --- 5. Description of the invention (2) The manufacturing cost of the flip chip. Electricity is arranged on the surface of the current low-cost overlay body: electrodes: pads, f-conductor body circuit (K) wafers can use ^ contact pads. Materials are attached to the wafer and the circuit. The chip 俜 = 二 地 5 is also provided with low-temperature solder bumps or other conductive adhesive boards, with the neutral contact surface facing down, and is provided between the circuit boards; the adhesive material provides ... tin bump solder connections (s 〇 〇 Der 0) and mechanical connection. As far as soldering the wafer and the circuit board (22: p 2 1nt), the thermal expansion between the wafer and the circuit board can be further advanced, and an organic primer can be used to suppress the first 1 A and Figure 1B illustrates that the stress of the solder joint is reduced. The solder joint is formed by combining a conventional flip-chip device with a metal, in which several metal bumps and two pre-solder bumps are formed as shown in the soldering. As shown in the figure, a number of pre-solder bumps 14 formed by contact soldering of the electrode pads 1 2 ^ machine circuit board 16 formed on the wafer 13 by low temperature soldering are formed on the molten reflow temperature conditions ^ . If the pre-solder bumps 1 4 are sufficient for the metal bumps 11 corresponding to the shape of the pre-solder bumps 1 4, the pre-solder bumps Η can be re-soldered to the wafer 13 and the zinc-tin solder 17 17. Then, the primer material 1 8 is soldered and 7 is wrapped in it, that is, the gap between the circuit board 6 and the welding is described as another unused pre-soldering: forming flip chip components 2A and 2B The diagram shows that teaches a solder bump 119 = chip-on-chip component 1. As shown in the figure, the wafer 13 is re-soldered to the electrode pads 12 formed on the wafer 13. The contact solder | board ^ 1 6 connected to the circuit board 16; wherein, the solder bump 19 is soldered with 塾 15 to form a solder joint 7. And finally

第7頁 200409575 ,五、發明說明(3) 1膠材料1 8填充於該晶片丨3以及該電路板丨6之間的間隙中, 並將該銲錫接1 7包覆於其中,即完成覆晶元件1,。 第3圖係說明一種習知的用於覆晶封裝件之有機電路 板1 0 0,該電路板具有接觸銲墊1 〇丨且該銲墊間隙1 〇 9係大 於0 · 1 8毫米。該有機電路板1 〇 〇之絕緣層1 〇 2可由有機材 料、混纖維之有機材料或混顆粒之有機材料等(例如,環 氧樹脂(ρ ο 1 y i m i d e )、聚亞醯胺ρ 〇 1 y i m i d e、順雙丁稀二酸 亞胺 /二氮牌(bismeleimide triazine)、氰 i旨(cyanate _ ester)、聚苯并環丁烯(poiybenzocyclobutene)或其玻璃 纖維(g 1 a s s f i b e r )之複合材料等)所製成。該接觸銲墊 1 0 1典型地係由金屬材料(例如,銅)所形成。一般的金屬 阻障層1 0 3包含鎳黏著層以及形成於該銲墊1 〇 1上的金保護 層。然而,該阻障層亦可由金、鎳、鈀 '銀、錫、鎳/ ί巴、絡/欽、把/金或錄/妃/金等,藉由電鍛 (electroplating)、無電鍍(electroless plating)或物 理氣相沈積(phy s i ca 1 vapor depos i t i on )等方法形成。 在該電路板1 〇〇之表面上沈積有機絕緣保護層(organic s〇1 d e r m a s k 1 a y e r ) 1 0 4,以保護電路層1 0 5並提供絕緣特 性。最上層的兩層電路層1 0 5、1 0 6,一般係透過該項領域 中習知的導孔1 0 7電性連接。參照第3圖,在該種銲墊間隙 -1 0 9較大(例如,大於〇 · 1 8毫米)的情況下,電路線1 〇 8可設 置於兩接觸銲墊1 0 1之間。並在接觸銲墊1 0 1上形成預鲜錫 凸塊1 1 0供形成覆晶銲錫接;其中,目前業界主要係藉由 鋼板印刷技術(s ΐ e n c i 1 p r i n t i n g t e c h η〇1 〇 g y )沈積鲜錫Page 7, 200409575, V. Description of the invention (3) 1 glue material 1 8 is filled in the gap between the wafer 丨 3 and the circuit board 丨 6, and the solder joint 17 is wrapped in it, and the coating is completed. Crystal element 1, FIG. 3 illustrates a conventional organic circuit board 100 for a flip-chip package. The circuit board has a contact pad 10 and the pad gap 10 is larger than 0. 18 mm. The insulating layer 10 of the organic circuit board 100 may be made of an organic material, an organic material mixed with fibers, or an organic material mixed with particles (for example, epoxy resin (ρ ο 1 yimide), polyurethane ρ 〇1 yimide , Bis (succinimide / diazine), biseleimide triazine, cyanate _ ester, polyicyclobutene (poiybenzocyclobutene) or glass fiber (g 1 assfiber) composite materials, etc.) Made of. The contact pad 1 0 1 is typically formed of a metal material (for example, copper). A general metal barrier layer 103 includes a nickel adhesion layer and a gold protective layer formed on the pad 101. However, the barrier layer can also be made of gold, nickel, palladium, silver, tin, nickel / ί 巴, ///, 把 / 金 or // 妃 / 金, etc., by electroplating, electroless plating) or physical vapor deposition (physical ca 1 vapor depos iti on). On the surface of the circuit board 100, an organic insulating protective layer (organic sol d e r m a s k 1 a y e r) 104 is deposited to protect the circuit layer 105 and provide insulation characteristics. The top two circuit layers, 105 and 106, are generally electrically connected through vias 10 7 which are well known in the field. Referring to FIG. 3, in a case where the pad gap -10 9 is large (for example, greater than 0.18 mm), the circuit wire 108 may be disposed between the two contact pads 101. Pre-fresh tin bumps 1 10 are formed on the contact pads 101 to form flip-chip solder joints. Among them, the current industry mainly uses stencil printing technology (s ΐ enci 1 printingtech η〇1 〇gy) to deposit fresh solder. tin

16974.ptd 第8頁 200409575 五、發明說明(4) 以形成銲錫凸塊。在電路柄卜带 ,, ^ ^ P:n Si 44- η Λ 故上形成預銲錫凸塊的常用方法 (如,鋼板印刷技術),可夂去 >可夹國專利第 5, 2 0 3, 0 7 5 (Angulas et an、盖阳由 rw κ , al)吴國專利第5, 4 9 2, 266號 C Hoebener e t al)以及美岡直制给广 rw. u · 夫圓專利弟5, 8 2 8, 1 2 8號 CHigashiguchi et al)等專剎所妲 而,尤奋i木;!寻利所揭示之相關先前技術。然 0士 ^ 1 < 至n陳1 0 9縮減至〇 · 1 5毫米以下 .〇 午❿低而不可行;此外,隨去 紅墊間隙1 0 9的縮減,絕緣保罐声彳n j」订 卜1返者 身的蛀勰品拉日丨《〜 104對於該電路板100本 开的接觸面積1 1 1則變得更小,而 ^ ^ , i 使该絕緣保護層1 0 4對於 以兒路板1 0 0本身的黏著力有減弱的趨勢。 、 使用電鍍的方式形成銲錫凸堍 KB A, , 貝〗可克服该種I旱塾間距 的限制,使用電鍍的方式在覆晶電 裡干!间距 相關先前技術,已揭示於美國專利第5 = t銲錫凸塊的 et al)以及美國專利第5, 48〇, 8 3 5號(h , if虎(Gall 電鍍製程仍存在著有可能使形成於該:_ 然而’ 又知的缺點,且亦需考量鍍覆的均勻性 又曰 芎的n a以及凸塊的高唐。 σ '心緣保護層的存在,亦會對該電路板 -f-Λ % 勺放月匕產生不利地 心令,特別是銲墊間距小於0 . 1 5毫米時;' 成於該電路板上的絕緣保護層,對於該帝改$月况下’形 小(參照上述第3圖所述),在環境的影響*下路板^的黏著力變 腐麵與擴散’容易使其喪失其絕緣特性。 於^金屬/勺 緣保護層相較於構成該有機電路板的其’於邊絕 i曰I材料,通常呈右 子較高的CTE以及較低的玻璃轉移溫廑r ] /、 tr„ . . ^ vglass ansition temperature);因此,在雷放 兒路板的微銲墊間16974.ptd Page 8 200409575 V. Description of the Invention (4) To form solder bumps. ^ ^ P: n Si 44- η Λ on the handle of the circuit, so the common method of forming pre-solder bumps (such as stencil printing technology) can be removed > Kokoku Patent No. 5, 2 0 3 , 0 7 5 (Angulas et an, Gaiyang by rw κ, al) Wu Guo Patent No. 5, 4 9 2, 266 C Hoebener et al) and Mioka direct production to Guangzhou rw. U · Fuyuan Patent Brother 5 , No. 8 2 8, 1 2 No. 8 Chigashiguchi et al), etc., especially Fen Imu;! Related related prior art disclosed by Xunli. However, the reduction of 0 ^ 1 < to n Chen 1 0 9 is reduced to less than 0.15 mm. 〇 Noon is not feasible; in addition, with the reduction of the red pad gap 1 0 9, the insulation can sound 彳 nj " Book 1 of the return of the person's body 丨 "~ 104 for the circuit board 100 open contact area 1 1 1 becomes smaller, and ^ ^, i makes the insulating protective layer 1 0 4 for The adhesive strength of the children's board 100 has a tendency to weaken. 1. The use of electroplating to form solder bumps KB A,, can be used to overcome the limitation of this type of I drylands, use electroplating to dry in flip chip! Prior art related to pitch has been disclosed in U.S. Patent No. 5 = t solder bump et al) and U.S. Patent No. 5,48,0 3,5 (h, if Tiger (Gall plating process still exists to make it possible to form In this: _ However, the shortcomings are known, and the uniformity of the plating needs to be considered, and the high Tang of the bumps is also considered. Σ 'The existence of a protective layer on the edge will also affect the circuit board -f- Λ% Spreading the moon dagger produces unfavorable orders, especially when the pad spacing is less than 0.15 mm; 'the insulation protection layer formed on this circuit board is small for the Emperor to change the moon condition' (see As described in Figure 3 above), under the influence of the environment *, the adhesion of the circuit board ^ deteriorates the surface and spreads easily, which makes it easy to lose its insulation properties. Compared with the organic circuit board, the metal / spoon edge protective layer Its' Yu Bian Jui Ji I material, usually has a higher CTE and a lower glass transition temperature (rr / / tr ".. ^ Vglass ansition temperature); therefore, the Micro-pad

200409575200409575

•五、發明說明(5) 題。 護層於 於該電 錫接以 銲墊間 面上形 保護層 覆晶鮮 之微銲 銲墊間 觸銲墊 將導電 阻層, 使該晶 錫材料 之導電 •距處存在有絕緣保護層,可能造成信賴性降低 ^鑒於上述之問題,必需提供一種不具有絕緣保 包路板之微銲墊間之微銲墊間距有機電路^ 路板之銲墊上沈積銲錫凸塊之方法,以 1 及板對板之銲錫接。 战设日日鲜 [發明内容] 本發明之主要目的係提供一種具有鍍銲錫之 成有多個排列文隹 製亥電路板表 項茗认 排列^木的接觸銲墊,且該表面並I絕^ 覆盍於該銲熱問和, …、、巴、、、家 錫接板對板之銲錫接。 4 墊間距有機# = 4目的係提供一種形成具有鍍銲錫 距有機電跋把 反的方法,該方法係先提供一種微 且該表^ ^右該電路板具有—表S設有至少一接 晶種層沈積緣保護層覆蓋於該銲墊間距上; 並於對應該接^ ^ :上;於該導電晶種層上覆蓋一 種層曝露出來·纟:之位置處形成有至少一開孔以 沈積於該開口 ·,^由鍍覆法(plating met hod)將銲 晶種層。 以及’移除該阻層與位於該阻層下 本發明之又— 墊間距有機電路7目的係提供一種形成具有鍍銲錫之微銲 距有機電路板,、反的方法,該方法係先提供一種微銲塾間 且5玄表面不具右笔路板具有一表面設有至少一接觸銲墊 /、、吧緣保護層覆蓋於該銲墊間距上;於該表• V. Description of Invention (5). The protective layer touches the conductive resistance layer between the micro-soldering pads covered with a crystal protective layer on the surface of the electric solder connected with the pads, and a conductive resistance layer is provided to make the crystal tin material conductive. There is an insulating protective layer at the distance. May reduce reliability ^ In view of the above problems, it is necessary to provide an organic circuit with a micro-pad pitch between micro-pads of an insulated circuit board ^ A method of depositing solder bumps on the pads of a circuit board Solder connection to the board. [Design of the Invention] The main object of the present invention is to provide a contact pad having a plurality of arrays of printed circuit boards, which are formed by solder plating, and the contact pads are arranged on the surface. ^ Covering the soldering heat,… ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, and During Up Up-Up-Up the Solder Joints of the Tin-to-Board Solder Joints. The 4 pad spacing organic # = 4 purpose is to provide a method for forming an organic electric pole with a plated solder pitch. The method is to first provide a micro and the table ^ ^ The circuit board has-Table S is provided with at least one crystal A seed layer deposition edge protective layer covers the pad spacing; and is connected to the corresponding pad; a layer is exposed on the conductive seed layer to expose at least one opening is formed at the position for deposition; At this opening, a seed layer is welded by a plating met hod. And 'removing the resist layer and the present invention under the resist layer—the pad pitch organic circuit 7 aims to provide a method for forming a micro-pitch organic circuit board with plated solder, and the reverse method, which first provides a There is no right pen circuit board on the surface between the micro-welding pads and the surface is provided with at least one contact pad /, and the edge protection layer covers the pad pitch;

200409575 五、發明說明(6) 面上覆蓋一阻層,並 少 ....... 、對 復孟一阻潛,並於 ^ 〜-200409575 V. Description of the invention (6) The surface is covered with a resistive layer, and less....

開孔以使該晶種風、應該接觸銲I . 層曝露出势之位置處形成有至 (eleCtr〇less plau:出采,經由無、办成^主 料沈積於該開口;以 及,移除該阻層。 去將銲錫柯 '又 本發明具有鍍銲锡 片形成覆晶銲錫接,式^微銲墊間矩有擁千 較於習知方法係使用::電路板形成板; 可與晶 之電路板可能對電路叔面具有絕緣保譜展Ϊ之銲錫接。相 將絕緣保護層施用於2效能產生不;::ί於銲塾間距 域,可以藉由鑛覆製程电路板之接觸鋒墊二二,士發明不 銲墊上’ χ不會產生^ ’將銲錫材料成功地沈:密的區 之電路板而影響信賴性°方法中使用表面且有Ί :ί: [實施方式] 孭改的問題。 一有硙緣保護層 第4至1 3圖將詳細說 距有機電路板及其製造方、/电明具有鍍銲錫之微銲墊間 如第4謂所示,電:f的較佳實施例。 電路層2 0 2,其中,节當板200包括第一電路層2Q1與第二 間具有'絕緣層層2〇1與該第二電路層202 層電性連接。該絕緣声心::L 該第-與第二電路 胺、順錐丁接-缺食材枓寺(例如,環氧樹脂、聚亞醯 或复* ^ 稀一次醯亞胺/三氮阱、氰酯、聚苯并環丁烯 上僅具:Ϊ : Ϊ : ίπ材料,)所製成。在該第一電路層201 复 /、 、干 2 〇 4而無其他金屬導線(t r a c e s )形成於 可視貫際需要,將金、鎳、鈀、銀、錫、金/鎳、A hole is made so that the seed wind should contact the welding I. The layer is exposed at the position where the potential is exposed (eleCtr0less plau: mined, and the main material is deposited on the opening through the non-doped material; and, removed The resistance layer is used to form a solder chip, and the present invention has a plated solder sheet to form a flip-chip solder joint. The moment between the micro-pads is much larger than the conventional method. It is used: a circuit board forming board; The circuit board may have a solder connection on the tertiary surface of the circuit with insulation and spectrum spreading. The application of the insulating protective layer to the 2 efficiency produces no :: ί in the soldering pitch space, you can use the contact front Pad 22, the invention of the non-soldering pad 'χ will not produce ^' Sink the solder material successfully: dense area of the circuit board and affect the reliability ° The surface is used in the method and there is: :: [实施 方式] 孭 改The problem of a protective layer with edges is shown in Figures 4 to 13 in detail from the organic circuit board and its manufacturer. The preferred embodiment is the circuit layer 2 0 2, wherein the jigsaw board 200 includes a first circuit layer 2Q1 and a second space. 'The insulating layer layer 201 is electrically connected to the second circuit layer 202. The insulating acoustic core :: L This-is connected to the second circuit amine, cis-butene-lacks food ingredients (such as epoxy resin) , Polyimide, or complex * ^ dilute primary imine / triazine, cyanate ester, polybenzocyclobutene with only: Ϊ: Ϊ: ίπ materials,). On the first circuit layer 201 Compound /,, and dry without other metal wires (traces) formed in accordance with the needs of the current, gold, nickel, palladium, silver, tin, gold / nickel,

第11頁Page 11

200409575 ,五、發明說明(7) 錄/纪或錄/1 '〜 ’、麵/金等金屬所彳盖 觸銲墊2 0 4j: v 構成之金屬阻障声开〉士 ^。另一方面,‘铵a n 导續形成於該接 亦可設計為夺而說人士 4如弟4β圖所示,有機♦狄接 ~ ^ 表面僅含有接觸銲墊qni ,铖电路板30 恰好位於t亥導孔舰 〒塾3〇1’ i該接觸銲塾嶋 有由金、镍、“ w 1 5亥接觸銲墊3 0 1卜女_ . 才f成之金屬卩且障層。該有機+路/鎳/把或鎳/免/金等所 3 0 3與第二電路層304, 4%:ί3。0亦包括第-電路層 ^ 3.並11由導孔302使該第=層間具有-絕緣 Μ緣層3 0 5可由有機材料、 蝻、弟-電路層電性連接。 有機材料等(例如,環氧樹二、.取之有機材料或混顆粒之 驢亞胺/三氮味、氰醋、聚^养二亞醒胺、順雙丁稀二酸 合材料等)所製成。同樣地,1二:2 f f玻場纖維之複 有絕緣保護層形成於其上。X %路板3 〇 〇的表面上並不具 I又而a ’當该接觸銲墊2 〇 4、3 〇 1你 古a 具有微銲墊間距時,可以 ^冋狁又排列或 鍍)將銲錫材料沈積至該㊉法(例如,電鍍或無電 寸/兄槓主忑包路板2 0 0、3 0 0之接觸銲墊2 〇 4、 3 0 1上。在將銲錫材料沈積至該接觸銲墊2 〇 41之前, 可先於該接觸銲墊2 0 4、3 0 1上,形成導電晶種層(將於後 文中詳細說明),以利銲錫材料的沈積。該導電晶種層可 藉由物理氣相沈積(PVD)、化學氣相沈積(CVD)、無電鍍或 化學沈殿,例如滅鐘(s p u 11 e r i n g )、蒸鍍 (evaporation)-電弓瓜 i:氣沈積(arc vapor deposition)、離子束須I M (ion beam sputtering)、雷身于 溶散沈積(laser ablation deposition)、電漿促進化學200409575, V. Description of the invention (7) Recording / Ji or Recording / 1 '~', covered with metal such as surface / gold, etc. Touch pad 2 0 4j: v The metallic barrier sound composed by v is open. ^. On the other hand, the ammonium anion formed on this connection can also be designed as a person. As shown in the figure 4β, the organic connection is only ^ The surface only contains the contact pad qni, and the circuit board 30 is located exactly at t Hai pilot hole ship 301 ′ The contact welding pad has a metal layer made of gold, nickel, “w 1 5 接触 contact pad 3 0 1” and a barrier layer. The organic + Circuit / nickel / handle or nickel / free / gold, etc. 3 0 3 and the second circuit layer 304, 4%: 3. 0 also includes the-circuit layer ^ 3. and 11 through the via 302 makes the first layer have -Insulation M edge layer 305 can be electrically connected by organic materials, silicon, and circuit layers. Organic materials, such as epoxy tree II, organic materials or mixed particles of donkey imine / triazine, It is made of cyanoacetate, polythionylamine, maleic acid, etc.). Similarly, a 12: 2 FF glass field fiber is provided with an insulating protective layer formed thereon. X% 路The surface of the board 3 does not have I and a. 'When the contact pads 2 0, 4 and 3 1 have a micro pad pitch, they can be arranged or plated.) The solder material is deposited to This method (for example, plating Or the non-electricity / branches of the main circuit board 2 00, 3 0 0 on the contact pads 2 0, 3 0 1. Before depositing solder material on the contact pad 2 0 41, A conductive seed layer (to be described in detail later) is formed on the contact pads 2 0 4 and 3 1 to facilitate the deposition of solder material. The conductive seed layer can be formed by physical vapor deposition (PVD), chemical Vapor deposition (CVD), electroless plating or chemical sinking, such as spu 11 ering, evaporation-electric arc i: gas vapor deposition, ion beam sputtering (ion beam sputtering) Lightning in laser ablation deposition, plasma to promote chemistry

16974.ptd16974.ptd

200409575 五、發明說明(8) 氣相沈積(PECVD)或有機金屬化學氣相沈積(m〇CVD)等方 法’形成於該電路板2 0 0、3 0 0之表面。 如弟5 A圖所示’導電晶種層2 0 6係先沈積於該電路板 2 0 0之接觸銲墊2 0 4,再將阻層2 0 7直接施放於該導電晶種 層2 0 6上;並使該阻層2 0 7於相對應於該接觸銲墊2 〇 4之位 置上形成至少有一開孔2 0 8,以部分地曝露出該導電晶種 層2 0 6,接者,藉由鍍覆製程(較佳為電錢),將鲜錫材料 2 0 9沈積於曝露出該導電晶種層2 0 6之開孔2 0 8 ;然後,如 第5 B圖所示,移除該阻層2 0 7以及該阻層所覆該之該導電 晶種層2 0 6 ;最後,在足以使該沈積之銲錫材料2 〇 9熔融之 迴銲溫度條件下,進行迴銲(r e Π 〇 w — s 0 1 d e r i n g )的製程, 使該銲錫材料2 0 9經迴銲而在該接觸銲墊2 〇 4上形成群錫凸 塊2 1 0。同樣地,參照第6 A圖中所示之電路板3 〇 〇,導電晶 種層3 0 6係先沈積於該電路板3 0 0之接觸銲墊3 〇丨,再將阻 層3 0 7直接施放於該導電晶種層3 0 6上;並使該阻層3 〇 7在 相對應於該接觸銲墊3 0 1的位置上形成至少有一開S孔3 〇 8 以部分地曝露出該導電晶種層3 0 6。接著,藉由^覆製程 將銲錫材料3 0 9沈積於該開孔3 0 8 ;然後,如第6 B圖所示, 移除該阻層3 0 7以及位於該阻層下之導電晶種層3〇6; ^行 迴焊的製程’使經沈積之銲錫材料309經迴銲:在該接觸 銲墊3 0 4上形成銲錫凸塊3 1 0。 該導電晶種層2 0 6、3 0 6可由金屬、合金或堆疊數層金 鍍)所構成 該 屬層所構成。惟,依實際操作的經驗,該導電曰種声 2 0 6、3 0 6較佳係由銅或把粒子(特別是無電200409575 V. Description of the invention (8) Methods such as vapor deposition (PECVD) or organic metal chemical vapor deposition (mCVD) are formed on the surfaces of the circuit board 2000 and 300. As shown in Figure 5A, the conductive seed layer 2 0 6 is first deposited on the contact pad 2 4 of the circuit board 2 0, and then the resist layer 2 7 is directly applied to the conductive seed layer 2 0. 6; and at least one opening 2 0 8 is formed in the resist layer 2 0 7 at a position corresponding to the contact pad 2 0 4 to partially expose the conductive seed layer 2 0 6. Through a plating process (preferably electricity), a fresh tin material 209 is deposited on the openings 2 0 8 that expose the conductive seed layer 206; then, as shown in FIG. 5B, Remove the resist layer 207 and the conductive seed layer 206 covered by the resist layer; finally, perform reflow at a reflow temperature sufficient to melt the deposited solder material 009 ( re Π 〇w — s 0 1 dering), so that the solder material 209 is re-soldered to form a group of solder bumps 2 1 0 on the contact pad 2 04. Similarly, referring to the circuit board 3 00 shown in FIG. 6A, the conductive seed layer 3 06 is first deposited on the contact pad 3 3 of the circuit board 3 0, and then the resistance layer 3 7 Directly cast on the conductive seed layer 3 06; and make the resistance layer 3 07 form at least one open S hole 3 08 at a position corresponding to the contact pad 3 01 to partially expose the Conductive seed layer 306. Next, a solder material 3 0 9 is deposited on the opening 3 0 8 by a ^ coating process; then, as shown in FIG. 6B, the resist layer 3 7 and the conductive seed under the resist layer are removed. The layer 3006; ^ a process of reflow soldering causes the deposited solder material 309 to be reflowed: a solder bump 3 1 0 is formed on the contact pad 3 0 4. The conductive seed layer 206 and 306 can be made of metal, alloy, or a plurality of layers of gold). However, according to practical experience, the conductive sounds 2 0 6 and 3 6 6 are preferably made of copper or particles (especially without electricity).

16974.ptd 第13頁 200409575 五、發明說明(9) 坪錫材料2 0 9、3 0 9可為選自势、 鋅、鎳、锆、鎂、銦、碲以;:錫、銀、銅、鉍、銻、 合物所構成之合金。應注意的,所構成之組群之元素的混 亦可於該接觸銲墊間形成導電=j右有需要或可行的話, 根據本發明,該銲錫材 沈積元素的方式形成。例如^9、3 0 9亦可藉由連續鍛覆 鍍覆沈積銀薄層以及錫層’在迴=208、3 0 8依序藉由 錫而形成共溶的錫-銀銲錫凸塊2于衣轾後,銀最終會溶於 於本發明的另一實施例中,〇 310。 亦可先於接觸銲墊上形成金屬$ ^積該鲜錫材料之前’ 銲錫材料。如第7A圖所示,以提尚後續沈積於其上之 阻層3 0 7之後,藉由電鍍或i電_%路板300為例,施放該 對應於該接觸銲墊3〇1之位置並^,在該導電晶種層3 0 6相 分,形成數個金屬墊311。此種公,開孔3〇8曝露出來的部 或多層金屬層所組成,且較佳係玉:墊、3^可由單一金屬層 如,Snpb、SnAg或SnCu合金等^鋼或南溫銲錫材料(例 料3 0 9沈積於各個金屬墊31丨上;成。然後,將.銲錫材 於該金屬墊3 1 1上形成最終的銲钹者’進行迴銲製 '程,以 示。 凸塊312,如第7B圖所 如第8圖中所示,可選擇性 接觸銲墊3 0 1上,而非形成於該泰1〜晶種層3 〇 6形成於該 就所形成之阻層3 0 7而言,其可^曰板3 0 〇的整個表面上; 藉由無電鍍直接沈積於該晶種層f锡材料(未示於圖中) 晶種層3 0 6實際上係作為該|電\ 6上。於此情況下,該 …、兒錢製程之催化層。然而,16974.ptd Page 13 200409575 V. Description of the invention (9) Ping tin materials 2 0 9 and 3 0 9 may be selected from the group consisting of potential, zinc, nickel, zirconium, magnesium, indium, tellurium; tin, silver, copper, An alloy of bismuth, antimony, and compounds. It should be noted that the composition of the group of elements can also be formed between the contact pads. If necessary or feasible, according to the present invention, the solder material is formed in a manner of depositing elements. For example, ^ 9, 3 0 9 can also be used to deposit a thin silver layer and a tin layer by continuous forging plating. In the back = 208, 3 0 8 in order to form eutectic tin-silver solder bumps 2 by tin. After being clothed, silver will eventually dissolve in another embodiment of the present invention, 0310. The solder material can also be formed before the metal is formed on the contact pad. As shown in FIG. 7A, after the resist layer 3 07 deposited on it is subsequently lifted, the position corresponding to the contact pad 3 01 is cast by using electroplating or i-percent circuit board 300 as an example. In addition, a plurality of metal pads 311 are formed on the conductive seed layer by 306 phases. This type of metal is composed of exposed portions or multiple layers of metal layers, and is preferably made of jade: pad, 3 ^ can be made of a single metal layer such as Snpb, SnAg, or SnCu alloy, or steel or south temperature solder (Example material 3 0 9 is deposited on each metal pad 31 丨; then. Then, a solder material is formed on the metal pad 3 1 1 to perform the re-soldering process, as shown. 312, as shown in FIG. 7B, as shown in FIG. 8, it is possible to selectively contact the pad 3 0 1 instead of being formed on the Thai 1 ~ seed layer 3 0 6 formed on the resist layer 3 formed thereon. For example, it can be deposited on the entire surface of the plate 3 0; directly deposited on the seed layer f tin material (not shown) by electroless plating. The seed layer 3 6 is actually the | Electric \ 6. In this case, the ..., the catalyst layer of the process of money. However,

200409575 五、發明說明(ίο) 即使在該催化層(即,晶種層)3 0 6不存在的條件下,該銲 錫材料3 0 9亦可藉由無電鍍製程直接地沈積於該接觸銲墊 3 0 1上。因此,藉由使用無電鍍之製程,該銲錫材料2 0 9、 3 0 9亦可於該晶種層2 0 6、3 0 6不存在的條件下,沈積於該 阻層2 0 7、3 0 7之該開孔2 0 8、3 0 8内。 該電路板2 0 0、3 0 0上之該晶種層2 0 6、3 0 6宜具有較薄 之厚度,以利透過蝕刻的方法將其輕易地移除。實際上, 該晶種層係以0 · 0 0 0 1至〇 · 〇 〇 1毫米之厚度較為有效。關於 钱刻洛液,可參考已知的金相學(m e t a 1 1 〇 g r a P h y )書籍(例 如,nMetallographic etching1,,Gunter Petzow, American Society for Metals, Metals Park, Ohio (1 9 7 8 ))加以選擇。此外,該導孔2 〇 3、3 〇 2可藉由鍍覆填 孔,或以導電物質(例如,銅、銲錫合金、填充金屬之樹 脂或填充奴之金屬等)填充或部分填充導孔,提供該導孔 2 0 3、3 0 2電性傳導之特性。更特別者,該導電材料之組成 與該銲錫材料2 0 9、3 0 9之組成相同時,該導孔2〇3、3〇2以 及该銲錫材料之鍍覆,可於相同的鍍覆步驟中進行。再 者,該絕緣層2 0 5、3 0 5可視需要進行化學的或物理的表面 粗糙化,以於後續的封裝製程中提供較佳的黏著特性。 如第9圖所示,可以在該電路板3 0 0之接觸銲墊3〇1上 製造該銲錫凸塊3 1 0,以應用於费曰#姐枝/ '覆晶鲜錫接(f 1 i Ό _ c h i η j〇i n t )的結構。準備具有數個带 兒極I干墊4 0 2之半導體晶片 4 (H,以該電極銲墊4 0 2分別相料 ^ 曰片 m對應於該電路柘锃瓴 凸塊310之位置之方S=板3 0 0之1干錫 个V脰日日片4 0 1設置於該電路200409575 V. Description of the Invention (ίο) Even in the absence of the catalytic layer (ie, the seed layer) 3 06, the solder material 3 0 9 can be directly deposited on the contact pad by an electroless plating process. 3 0 1 on. Therefore, by using an electroless plating process, the solder materials 209, 309 can also be deposited on the resistive layer 207, 3 without the seed layer 206, 3 06. The openings of 0 7 are within 208, 308. The seed layer 2 06 and 3 6 on the circuit board 2 0, 3 0 0 should have a relatively thin thickness, so that it can be easily removed by etching. Actually, the seed layer is more effective with a thickness of 0. 0. 01 to 0. 0. 1 mm. Regarding Chankelo, you can refer to known metallographic books (meta 1 1 〇gra P hy) (for example, nMetallographic etching 1, Gunter Petzow, American Society for Metals, Metals Park, Ohio (1 9 7 8)) to choose . In addition, the via holes 203, 302 can be filled by plating, or the via holes can be filled or partially filled with a conductive substance (for example, copper, a solder alloy, a resin filled with a metal, or a metal filled with a slave, etc.). Provide the characteristics of electrical conduction of the via holes 203, 302. More specifically, when the composition of the conductive material is the same as that of the solder materials 209 and 309, the via holes 203, 302, and the plating of the solder material can be performed in the same plating step. In progress. In addition, the insulating layers 205 and 305 may be chemically or physically roughened as required to provide better adhesion characteristics in subsequent packaging processes. As shown in FIG. 9, the solder bump 3 1 0 can be manufactured on the contact pad 3 0 1 of the circuit board 3 0 0 for application to Fei Yue # 姐 枝 / 'Crystal fresh tin connection (f 1 i Ό _ chi η j〇int). Prepare a number of semiconductor wafers 4 (H, with electrode pads 4 0 2). The electrode pads 4 0 2 are used to match each other. ^ Slice m corresponds to the position of the circuit 柘 锃 瓴 bump 310. = Board 3 0 0 1 dry tin V daily day film 4 0 1 set in this circuit

ϋ 1— 1 ϊ — -1·ϋ 1— 1 ϊ — -1 ·

16974.ptd 8 Lr.16974.ptd 8 Lr.

200409575 ,五、發明說明(11) 舨3 0 0上;然後,如第9 β圖所示,進行迴銲製程使該銲锡 凸塊3 1 〇迴銲至該電極銲墊4 〇 2,以於該半導體晶片4 〇工以 及該電路板3 0 0之間,形成數個使該半導體晶片4 0 1與該電 路板3 0 〇電性連接的覆晶銲錫接4 03。 兒 於本發明之另一實施例中,可將該具有銲錫凸塊3丄〇 之電路板3 0 0應用於具有金屬凸塊的半導體晶片以形成覆 晶銲錫接。如第1 〇 A圖所示,半導體晶片5 0 1具有數個電&極 銲墊5 0 3形成於該半導體晶片5 0 1的作用表面,該電極鲜塾 5 0 3上具有數個用以形成覆晶銲錫接之金屬凸塊5 〇 2。該半 導體晶片5 0 1係以該金屬凸塊5 0 2分別相對應於該電路板 3 0 0之銲錫凸塊3 1 〇位置之方式設置於該電路板3 〇 〇上。然 後’如第1 〇 B圖所示,使該銲錫凸塊3 1 0迴銲至該金屬凸土 5 0 2,以於該半導體晶片5 〇 1以及該電路板3 0 0之間形成雙& 晶ί于錫接5 0 4。該金屬凸塊5 〇 2可由金屬、合金、或最人 種金屬所構成,例如銲錫凸塊、金凸塊、銅凸塊 . Μ 4干錫 巾自(solder caps)覆蓋之銅柱等;且該金屬凸塊可為任何 形狀:例如釘柱狀凸塊、球形凸塊、柱狀凸塊或’其他彤可狀 根據本發明,該電路板亦可同時地用於形成 接以及板對板之銲錫接。於本實施例中將利用該2 錫 凸塊210之電路板2 0 0來加以說明,如第m圖所示、有制于^ 一電路板6〇〇(於後文中稱為”第二電路 放衣備 ^機或陶究電路板,i將晶片6 =板可 適當的位置;於該第二Φρ 直%按迎该電路板 包路板6 0 0上,將數個接觸銲墊6〇1200409575, V. Description of the invention (11) 舨 3 0 0; then, as shown in FIG. 9 β, a reflow process is performed to re-solder the solder bump 3 1 0 to the electrode pad 4 0 2 to Between the semiconductor wafer 400 and the circuit board 300, a plurality of flip-chip solder joints 403 for electrically connecting the semiconductor wafer 401 and the circuit board 300 are formed. In another embodiment of the present invention, the circuit board 300 having a solder bump 3 丄 0 can be applied to a semiconductor wafer having a metal bump to form a flip-chip solder joint. As shown in FIG. 10A, the semiconductor wafer 501 has a plurality of electric pads 503 formed on the active surface of the semiconductor wafer 501, and the electrode 501 has several applications. In order to form a flip chip solder metal bump 502. The semiconductor wafer 501 is disposed on the circuit board 300 in such a manner that the metal bumps 502 correspond to the positions of the solder bumps 310 of the circuit board 300 respectively. Then, as shown in FIG. 10B, the solder bump 3 10 is re-soldered to the metal bump 5 2 to form a double & amp between the semiconductor wafer 5 0 1 and the circuit board 3 0 0. Jing Jing Yu tin connection 5 0 4. The metal bump 502 may be made of metal, alloy, or most racial metal, such as solder bumps, gold bumps, copper bumps. Μ 4 dry solder towels covered with copper pillars, etc .; and The metal bump can be of any shape: for example, a stud bump, a spherical bump, a stud bump, or 'other bump'. According to the present invention, the circuit board can also be used to form a connection and a board-to-board Solder connection. In this embodiment, the circuit board 2000 of the 2 tin bump 210 will be used for illustration. As shown in the m-th figure, it is controlled by a circuit board 600 (hereinafter referred to as "second circuit" Put the machine on or prepare the circuit board, i will place the chip 6 = a suitable position of the board; on the second Φρ%, press the circuit board 6 0 0 to the circuit board, and place several contact pads 6. 1

200409575 五、發明說明Q2) 形成於該晶片6 0 2的周緣,其中,多個金屬凸塊6 0 4、6 0 5 係分別形成於該第二電路板6 〇 〇之該接觸銲墊6 0 1以及該晶 片6 0 2之電極銲墊6 0 3上。然後,將該第二電路板6 0 〇藉由 使其金屬凸塊6 0 4、6 0 5朝向形成於該電路板2 0 0 (於後文中 稱為”第—電路板',)上之銲錫凸塊2 1 0的方式,設置於該第 一電路板2 0 0。如第1 1 Β圖所示,使該金屬凸塊6 0 4、6 0 5分 別迴鲜至相對應的銲錫凸塊2 1 〇,以於該晶片6 〇 2以及該第 一電路板2 0 0之間形成覆晶銲錫接6 〇 6,並於該第二電路板 ^ 〇 〇以及該第一電路板2 0 0之間形成板對板之銲錫接6 〇 7。 該金屬凸塊6 0 4、6 0 5可由金屬、合金、或疊合數種金屬所 構成例如銲錫凸塊、金凸塊、銅凸塊或以銲錫帽覆蓋之 銅柱等;且該金屬凸塊可為任何形狀,例如釘柱狀凸塊、 球形凸塊、柱狀凸塊或其他形狀之凸塊。 请苓照第1 2Α圖,根據本發明可以使用第4Α圖中 之電路,2 0 0的類似製程,形成用作為製造覆晶構裝’ 7 1 0 (士第1 2 C圖所不)之基板或晶片承載件的有機電 該電路板7 0 0係藉由未使用絕緣保護層之相似, 製造’並分別於該電路板之上、下表面7〇4、 = = $ 接觸銲墊701、7 0 2。請夂γ笼19R冃一丄 $成數個 叫苓妝弟1 2B圖,藉由鍍覆的方 在“接觸銲墊7〇1上形成數個銲錫凸塊7〇3。請參照 圖’:晶片7 0 6以覆晶方式設置於該電路板7 0 0,該種费曰 =方式係使形成於該晶片7。6之電極銲塾m銲 成wt路板7GG之該銲錫凸塊7〇3;然後, / 709填充於該晶片7〇6以及該電路板7〇〇之間的間隙〃中材枓接200409575 V. Description of the invention Q2) is formed on the periphery of the wafer 602, wherein a plurality of metal bumps 604, 6 05 are respectively formed on the contact pads 6 0 of the second circuit board 600 1 and the electrode pads 603 of the wafer 602. Then, the second circuit board 6 0 is formed on the circuit board 2 0 (hereinafter referred to as “the first circuit board”) by orienting the metal bumps 6 0 4 and 6 5. The manner of the solder bump 2 1 0 is set on the first circuit board 2000. As shown in FIG. 11B, the metal bumps 6 0 4 and 6 0 5 are refreshed to the corresponding solder bumps, respectively. Block 2 1 0, so that a flip chip solder joint 6 0 6 is formed between the wafer 6 0 2 and the first circuit board 2 0 0, and the second circuit board 2 0 0 and the first circuit board 2 0 Board-to-board solder joints 6 and 0 are formed between 0. The metal bumps 604, 605 can be made of metal, alloy, or a combination of several metals such as solder bumps, gold bumps, and copper bumps. Or copper pillars covered with solder caps; and the metal bumps can be of any shape, such as stud bumps, spherical bumps, columnar bumps, or other shapes of bumps. Please refer to Figure 12A According to the present invention, the circuit in FIG. 4A and a similar process of 2000 can be used to form a substrate or wafer carrier for manufacturing a flip-chip structure '7 1 0 (not shown in FIG. 12 C). The organic electric circuit board 700 is manufactured by using the similarity of an insulating protective layer, and the upper and lower surfaces of the circuit board 704, == $, and the contact pads 701, 7 0 2. Please 夂The γ cage 19R is formed into several pieces called Lingzhuangdi 12B, and a plurality of solder bumps 703 are formed on the "contact pad 701" by plating. Please refer to the figure ': the wafer 706 is placed on the circuit board 700 in a flip-chip manner, and this kind of method is to weld the electrode pad 塾 m formed on the wafer 7.6 into a wt circuit board 7GG. Solder bump 703; Then, / 709 fills the gap between the wafer 706 and the circuit board 700.

16974.ptci 200409575 五、發明說明(13) 著’將數個外部端7 0 8 (例如,圖式中所例示之鲜球)植沒 於該電路板7 0 0之接觸銲墊7 0 2,從而完成該覆晶構裝 710。 ^ 另一方面,如第1 2 D圖所示,可將絕緣保護層7 2丨施用 於該電路板7 0 0設有接觸銲墊7〇 2之下表面,且該絕緣保護 層7 2 1在相對應於該接觸銲墊7 〇 2的位置形成數個開孔 7 2 2 使該接觸銲墊7 0 2透過該開孔而曝露出來,以便於進 行後續的外部端植設(未圖示)。又,如第i 2E圖中所示, 可於設有接觸銲墊7 0 2之電路板7 0 0的下表面,形成導電線 7 3 1 ’亚可在各個導電線7 3丨上形成表面塗層7 3 2 (例如, 金、鎳/金或環氧樹脂等)以防止腐蝕。 第13A圖,可以使用第4A圖中所示之電路板2〇〇的 類,衣程,形成用以作為製造覆晶構裝813(如第圖所 示一 土反或Ba片承載件的有機電路板800。該電路板8〇〇 係耩由未使用絕緣保言雈; ^ 板800之上表面8〇3上;^相似的方法製造’並於該電路 好兮+ 4 上形成有導電線801以及接觸銲·墊8 0 2, 以及该電路板8 〇 〇之下本c u ^ ^ ^ ^ ^ 义面8 0 4形成有接觸銲墊8 0 5以及視 表面隐之相鄰兩接照第ΐ3Β圖’由於位於該上 (例如,至少小於塾⑽2之間的銲塾間隙相當小 鄰接觸銲墊8 〇 2之間的^ 該導電線8 0 1無法穿過該相 接至位於虛線8 0 7所包含之,因此,該導電線8 〇 1主要係連 回到第13A圖,在位於节^凸塊區域内緣的接觸銲墊802。 墊8 0 2上形成數個銲錫路板8〇〇之上表面8 0 3的接觸銲 鬼8 〇 8,以供後續製程使用。16974.ptci 200409575 V. Description of the invention (13) Writing 'Plug several external terminals 7 0 8 (for example, fresh balls as exemplified in the figure) into the contact pad 7 0 2 of the circuit board 7 0 0, Thus, the flip-chip structure 710 is completed. ^ On the other hand, as shown in FIG. 12D, an insulating protective layer 7 2 丨 can be applied to the circuit board 7 0 0 provided with a lower surface of a contact pad 70 2, and the insulating protective layer 7 2 1 A plurality of openings 7 2 2 are formed at positions corresponding to the contact pads 702, and the contact pads 7 02 are exposed through the openings, so as to facilitate subsequent external end implantation (not shown) ). Also, as shown in the figure i 2E, conductive lines 7 3 1 ′ may be formed on the lower surface of the circuit board 7 0 0 provided with contact pads 7 0 2, and a surface may be formed on each conductive line 7 3 丨. Coating 7 3 2 (eg, gold, nickel / gold or epoxy, etc.) to prevent corrosion. In FIG. 13A, the circuit board 200 shown in FIG. 4A can be used to fabricate a flip chip structure 813 (as shown in FIG. Circuit board 800. The circuit board 800 is made of unused insulation material; ^ is formed on the upper surface 8003 of the board 800; ^ is manufactured by a similar method; and a conductive line is formed on the circuit +4 801 and the contact pad 802, and the circuit board 800 under the cu ^ ^ ^ ^ ^ Sense surface 8 0 4 is formed with the contact pad 805 and the adjacent two adjacent photos hidden on the visual surface. ΐ3B diagram 'Because it is located on (for example, at least less than the welding gap between 塾 ⑽2 is quite small adjacent to the contact pad 8 〇 2 ^ the conductive line 8 0 1 can not pass through the connection to the dotted line 8 0 It is included in 7. Therefore, the conductive wire 801 is mainly connected back to FIG. 13A, and the contact pad 802 is located on the inner edge of the bump region. Several pads 8 are formed on the pad 8202. 〇The upper surface 803 contacts the welding ghost 8 008 for use in subsequent processes.

16974.ptd 第18頁 200409575 五、發明說明(14) --—--- 下声圖所示,可於該電路板8 0 0之上表面8〇3以及 ^ ,施用絕緣保護層8 2 1以覆蓋該導電線8 〇丄. 4 1 I所示,該虛線8〇7所包含之區域)曝露出來。然 後、將/、有電極銲墊81 0之晶片8 0 9設置於該電路板8〇0, 亚以底膠材料8 1 2填充於該晶片8 0 9以及該電路板8 〇 〇之間 的^隙中。最後,將外部端8 Π (例如,銲球、引腳或金屬 柱荨)接。又至位於該電路板8 〇 〇之下表面8 〇 $的接觸銲墊8 〇 5 上 攸而元成该覆晶構裝813。另一方面,如第1⑽圖所 示’可於各個接觸銲墊8 〇 5上形成表面塗層8 1 4 (例如, 至 錄/孟或可銲的有機防護劑(〇 S P )等),並於該導電線 8 0 1、8 0 6上形成表面塗層8 1 5 (例如,金、錄/金或環氧樹 月曰專)以防止腐I虫。再者,如第1 3E圖所示,另一種選擇係 在位於該電路板8 〇 〇之上表面8 0 3的各個導電線8 〇 1上形成 表面塗層8 1 8 (例如,〇 S P、環氧樹脂、金、錄/金等),以 及在该電路板8 〇 〇之下表面8 0 4上覆蓋一層絕緣保護層8 i 6 以覆盍该導電線8 〇 6 ;惟,該絕緣保護層8 1 6係透過多個形 成於該保護層上的開孔8 1 7而將該接觸銲墊8 〇 5曝露出來。 綜上所述,本發明已藉由較佳具體實例詳細說明。然 而’應瞭解的是,本發明並非僅侷限於所揭示之實例。本 發明之範疇應涵蓋未悖離下列申請專利範圍所界定之精神 下所為之修倚以及變化。16974.ptd Page 18, 200409575 V. Description of the invention (14) ------ As shown in the following sound image, an insulating protective layer 8 2 1 can be applied on the upper surface of the circuit board 8 0 0 and ^ The area covered by the dotted line 807 is exposed as shown by covering the conductive line 8 0. 4 1 I. Then, a wafer 8 0 9 with electrode pads 8 0 is set on the circuit board 8 00, and a primer material 8 1 2 is filled between the wafer 8 0 9 and the circuit board 8 0 0 ^ Gap. Finally, connect the external terminals 8 (such as solder balls, pins, or metal posts). The contact pads 805, which are located on the surface of the circuit board 800 below the 800, are further formed into the flip-chip structure 813. On the other hand, as shown in the first figure, a surface coating layer 8 1 4 (for example, a tor / metal or solderable organic protective agent (〇SP), etc.) can be formed on each contact pad 8 0 5, and A surface coating 8 1 5 (for example, gold, gold / epoxy or epoxy resin) is formed on the conductive wires 801, 806 to prevent rot I. Furthermore, as shown in FIG. 13E, another option is to form a surface coating 8 1 8 on each conductive wire 8 0 1 located on the surface 8 0 3 of the circuit board 8 0 (for example, 0SP, Epoxy resin, gold, copper / gold, etc.), and an insulating protective layer 8 i 6 is covered on the surface 8 0 4 of the circuit board 800 to cover the conductive wire 8 06; however, the insulating protection The layer 8 1 6 exposes the contact pad 8 05 through a plurality of openings 8 1 7 formed in the protective layer. In summary, the present invention has been described in detail with reference to preferred specific examples. It should be understood, however, that the invention is not limited to the disclosed examples. The scope of the present invention should cover modifications and changes made without departing from the spirit defined by the scope of the following patent applications.

16974.ptd 第19頁 200409575 .圖式簡單說明 1 [圖式簡單說明] 第1 A及1 B圖係顯示一種習知覆晶元件之製程的截面概 示圖 ; 第2 A及2 B圖係顯示另一種習知覆晶元件之製程的截面 概示圖; 第3圖係顯示一種具有絕緣保護層之習知電路板的截 面圖 ; 第4 A及4 B圖係分別顯示根據本發明實例之電路板的截 面圖 ; 第5A及5B圖係分別顯示在第4A圖所示之電路板上形成 凸塊之製程的截面概示圖; 第6 A及6 B圖係分別顯示在第4 B圖所示之電路板上形成 凸塊之製程實例的截面概示圖; 第7A及7B圖係分別顯示在第4B圖所示之電路板上形成 凸塊之另一製程實例的截面概示圖; 第8圖係根據本發明將催化層塗覆至電路板之.接觸銲 墊的截面圖; 第9 A及9 B圖係根據本發明之實例,形成覆晶銲錫接之 迴銲製程的截面概示圖; 第1 0 A及1 0 B圖係根據本發明之另一實例,形成覆晶銲 錫接之迴銲製程的截面概示圖; 第1 1 A及1 1 B圖係根據本發明之實例,形成覆晶銲錫接 以及板對板之銲錫接之迴銲製程的截面概示圖; 第1 2 A至1 2 C圖係根據本發明使用鍍覆銲錫的技術,形16974.ptd Page 19, 200409575. Brief description of the drawings 1 [Simplified illustration of the drawings] Figures 1 A and 1 B are schematic cross-sectional views showing the process of a conventional flip chip device; Figures 2 A and 2 B are A schematic cross-sectional view showing a process of another conventional flip-chip device; FIG. 3 is a cross-sectional view showing a conventional circuit board with an insulating protective layer; and FIGS. 4 A and 4 B are views respectively showing examples according to the present invention. Cross-sectional view of a circuit board; Figs. 5A and 5B are schematic cross-sectional views respectively showing a process of forming bumps on the circuit board shown in Fig. 4A; Figs. 6 A and 6 B are respectively shown in Fig. 4B A schematic cross-sectional view of a process example of forming bumps on the circuit board shown; FIGS. 7A and 7B are schematic cross-sectional views of another process example of forming bumps on the circuit board shown in FIG. 4B, respectively; Figure 8 is a cross-sectional view of a contact pad with a catalytic layer applied to a circuit board according to the present invention; Figures 9 A and 9 B are schematic cross-sectional views of a reflow process for forming a flip-chip solder joint according to an example of the present invention Figures; Figures 10 A and 10 B are another example of the present invention, forming a flip-chip solder joint Cross-sectional schematic diagrams of the reflow process; Figures 1 1 A and 1 1 B are schematic cross-sectional diagrams of the reflow process of forming flip-chip solder joints and board-to-board solder joints according to an example of the present invention; Section 1 2 Figures A to 1 C are diagrams of the techniques used in the present invention using plated solder.

16974.ptd 第20頁 200409575 圖式簡單說明 成覆晶構裝之製程的截面概示圖; 第1 2 D及1 2 E圖係分別顯示根插士 專不發明 板的截面圖; 第1 3 A圖係顯示根據本發明又 ^ 另 圖 例之電路板 第 實例之電路 的截面 術 # 1SB圖係第13A圖所示之電路板的 苐1 3 C圖係顯示根據本發明 ^視圖; 成覆^銲錫接之覆晶構裝的截兩用.鍍覆銲锡的技 板的 丄u 入丄u U尔 截面圖。 刀別顯示根 據本發明又 1 覆晶元件 1 , 11 金屬凸塊 1 覆晶元件 13 晶片 12 * 1 電極銲墊 15 接觸銲墊 14 預銲錫凸塊 17 銲錫接 16 有機電路板 19 鲜锡凸塊 18 底膠材料 101 接觸銲墊 100 有機電路板 103 金屬阻障層 102 絕緣層 105, 1 〇 6,1 0 8電路層 104 絕緣保護層 109 銲墊間隙 10 7 導孔 111 接觸面積 110 預銲錫凸塊 201 第一電路居 200 電路板 2 03 導孔 g 202 第二電路層 204 接觸銲墊 實例 形 之電路16974.ptd Page 20 200409575 Schematic cross-sectional diagrams briefly explaining the process of forming a flip-chip structure; Figures 1 2 D and 1 2 E are cross-sectional views of a non-invented plate by Genji; Figure 1 3 A The drawing shows a cross-section of the circuit of the circuit board of the first example according to the present invention. # 1SB is a 苐 1 3 C diagram of the circuit board shown in FIG. 13A, which shows a view according to the present invention; A cross-section view of the chip-on-chip structure. The solder-plated technology board is a cross-sectional view. The knife shows according to the present invention that another 1 flip chip 1, 11 metal bump 1 flip chip 13 wafer 12 * 1 electrode pad 15 contact pad 14 pre-solder bump 17 solder connection 16 organic circuit board 19 fresh tin bump 18 Primer material 101 Contact pad 100 Organic circuit board 103 Metal barrier layer 102 Insulating layer 105, 106, 108 Circuit layer 104 Insulating protective layer 109 Pad gap 10 7 Via 111 Contact area 110 Pre-soldering bump Block 201 First circuit home 200 Circuit board 2 03 Via g 202 Second circuit layer 204 Contact pad example circuit

第21頁 200409575 圖式簡單說明 405 絕 緣 層 207 阻 層 209 銲 錫 材 料 300 有 機 電 路板 302 導 孔 304 第 --- 電 路層 306 導 電 晶 種層 308 開 孔 310 銲 錫 凸 塊 312 銲 錫 凸 塊 402 電 極 銲 墊 501 半 導 體 晶片 503 電 極 銲 墊 601 接 觸 銲 墊 603 電 極 銲 墊 606 覆 晶 銲 錫接 701, 7 0 2接觸鲜塾 704 上 表 面 706 晶 片 708 外 部 端 710 覆 晶 構 裝 722 開 孔 732 表 面 塗 層 8 0 1,8 0 6導電線 層 \lCul 種 晶 電孔 導開 210 銲 錫 凸 塊 301 接 觸 銲 墊 303 第 一 電 路 層 305 絕 緣 層 307 阻 層 309 銲 錫 材 料 31 1 金 屬 墊 401 半 導 體 晶 片 403 覆 晶 銲 錫 接 502 金 屬 凸 塊 600 第 二 電 路 板 602 晶 片 6 0 4, 6 0 5金屬凸塊 700 有 機 電 路 板 703 銲 錫 凸 塊 705 下 表 面 707 電 極 銲 墊 709 底 膠 材 料 721 絕 緣 保 護 層 731 導 電 線 800 有 機 電 路 板 802 接 觸 銲 墊Page 21, 200409575 Brief description of the diagram 405 Insulation layer 207 Resistive layer 209 Solder material 300 Organic circuit board 302 Via 304 Section --- Circuit layer 306 Conductive seed layer 308 Opening hole 310 Solder bump 312 Solder bump 402 Electrode welding Pads 501 Semiconductor wafers 503 Electrode pads 601 Contact pads 603 Electrode pads 606 Chip solders 701, 7 0 2 Contact fresh 704 Upper surface 706 Wafer 708 External end 710 Crystal structure 722 Opening 732 Surface coating 8 0 1,8 0 6 Conductive wire layer \ lCul Seed hole opening 210 Solder bump 301 Contact pad 303 First circuit layer 305 Insulation layer 307 Resistive layer 309 Solder material 31 1 Metal pad 401 Semiconductor wafer 403 Chip-on-chip solder Connect 502 metal bump 600 second circuit board 602 wafer 6 0 4, 6 0 5 metal bump 700 organic circuit board 703 solder bump 705 lower surface 707 electrode pad 709 primer material 721 insulation protection layer 731 conductive wire 80 0 Organic circuit board 802 contact pad

16974. ptci 第22頁 200409575 i16974.ptci p. 22 200409575 i

I® 圖式簡單說明 803 上 表 面 804 下 表 面 805 接 觸 銲 墊 807 虛 線 808 銲 錫 凸 塊 809 晶 片 810 電 極 銲 墊 81 1 外 部 端 812 底 膠 材 料 813 覆 晶 構 裝 814, 815, 8H 丨表面塗層 816 絕 緣 保 護 層 817 開 孔 821 絕 緣 保 護 層 16974.rtd 第23頁Brief description of I® drawing 803 Upper surface 804 Lower surface 805 Contact pad 807 Dotted line 808 Solder bump 809 Wafer 810 Electrode pad 81 1 External end 812 Primer material 813 Crystal structure 814, 815, 8H 丨 Surface coating 816 Insulating protective layer 817 Opening hole 821 Insulating protective layer 16974.rtd Page 23

Claims (1)

200409575 -六、申請專利範圍 ' 1. 一種具有鍍銲錫之微銲墊間距有機電路板,係包括: 至少一表面,用以使銲錫接(s ο 1 d e r j 〇 i n t)形成 於其上; 至少一接觸銲墊,係形成於該表面上,且該表面 並未形成有絕緣保護層(solder mask layer);以及 一鑛銲錫(plating solder),係沈積於該接觸銲 塾上。 2. 如申請專利範圍第1項之電路板,其中,該鍍銲錫係藉 由電鑛所形成之鲜錫。 3. 如申請專利範圍第1項之電路板,其中,該鍍銲錫係藉 由無電鍍所形成之銲錫。 4. 如申請專利範圍第1項之電路板,其中,該鍍銲錫係以 結合電鍍以及無電鍍之方法所形成之銲錫。 5 .如申請專利範圍第1項之電路板,其中,該電路板之表 面上並無任何導電線(conductive trace)。 6. —種具有鍍銲錫之微銲墊間距有機電路板,該·電路板 包括: - 至少一表面,用以使銲錫接形成於其上; 至少兩接觸銲墊,係形成於該表面上,且未形成 有絕緣保護層及導電線於該銲墊間;以及 一鍍銲錫,係沈積於該接觸銲墊上。 7. 如申請專利範圍第6項之電路板,其中,該鍍銲錫係藉 由電鑛所形成之銲錫。 8. 如申請專利範圍第6項之電路板,其中,該鍍銲錫係藉200409575-VI. Patent application scope '1. A micro-pad pitch organic circuit board with solder plating, comprising: at least one surface for forming a solder joint (s ο 1 derj 〇int) on it; at least one The contact pad is formed on the surface, and a solder mask layer is not formed on the surface; and a plating solder is deposited on the contact pad. 2. For the circuit board under the scope of patent application item 1, wherein the solder plating is fresh tin formed by electricity ore. 3. For the circuit board of item 1 of the patent application scope, wherein the solder plating is a solder formed by electroless plating. 4. For the circuit board of the scope of patent application item 1, wherein the solder plating is a solder formed by a combination of electroplating and electroless plating. 5. The circuit board according to item 1 of the scope of patent application, wherein the surface of the circuit board does not have any conductive traces. 6. An organic circuit board having a micro-pad pitch with solder plating, the circuit board comprising:-at least one surface for solder formation thereon; at least two contact pads formed on the surface, No insulating protection layer and conductive wire are formed between the pads; and a solder plating is deposited on the contact pads. 7. For a circuit board with the scope of application for patent item 6, wherein the solder plating is a solder formed by electricity ore. 8. For a circuit board with the scope of patent application item 6, wherein the solder plating is borrowed 16974.ptd 第24頁 200409575 六、申請專利範圍 由無電鍍所形成之銲錫。 9.如申請專利範圍第6項之電路板,其中,該鍍銲錫係以 結合電鍍以及無電鍍之方法所形成之銲錫。 1 0. —種具有鍍銲錫之微銲墊間距有機電路板之製造方 法,該方法包括: 提供一有機電路板,該電路板包含一表面,並於 該表面形成有至少一接觸銲墊,且該表面並未覆蓋有 絕緣保護層; 在該電路板表面上形成導電晶種層; 在該導電晶種層上沈積阻層,並於該阻層相對應 於該銲墊處形成有至少一開孔; 經由鍍覆(p 1 a t i n g )的方法將銲錫材料沈積於該開 孔;以及 移除該阻層與該阻層下之導電晶種層。 Π .如申請專利範圍第1 〇項之方法,其中,該導電晶種層 係由選自銅、錫及錫-鉛合金所構成之組群之金屬所形 成。 - 1 2 .如申請專利範圍第1 0項之方法,其中,該導電晶種層 係一多層結構。 1 3 .如申請專利範圍第1 2項之方法,其中,該多層結構係 由選自銅、錫、鎳、鉻、鈦、銅-鉻合金及錫-鉛合金 所構成之組群之金屬所形成。 1 4 .如申請專利範圍第1 0項之方法,其中,該銲錫材料係 由選自錯、錫、銀、銅、麵、銻、鋅、鎳、I呂、鎭、16974.ptd Page 24 200409575 6. Scope of patent application Solder formed by electroless plating. 9. The circuit board according to item 6 of the application, wherein the solder plating is a solder formed by a combination of electroplating and electroless plating. 1 0. A method for manufacturing a micro-pad pitch organic circuit board with solder plating, the method comprising: providing an organic circuit board, the circuit board including a surface, and forming at least one contact pad on the surface, and The surface is not covered with an insulating protection layer; a conductive seed layer is formed on the surface of the circuit board; a resistance layer is deposited on the conductive seed layer, and at least one opening is formed at the resistance layer corresponding to the pad. Holes; depositing solder material on the openings via a method of p 1 ating; and removing the resist layer and the conductive seed layer under the resist layer. Π. The method of claim 10, wherein the conductive seed layer is formed of a metal selected from the group consisting of copper, tin, and a tin-lead alloy. -12. The method according to item 10 of the scope of patent application, wherein the conductive seed layer has a multilayer structure. 13. The method according to item 12 of the scope of patent application, wherein the multilayer structure is made of a metal selected from the group consisting of copper, tin, nickel, chromium, titanium, copper-chromium alloy, and tin-lead alloy. form. 14. The method according to item 10 of the scope of patent application, wherein the solder material is selected from the group consisting of tin, tin, silver, copper, surface, antimony, zinc, nickel, I, Lu, 鎭, 16974. ptci 第25頁 200409575 ,六、申請專利範圍 < 銦、碲及鎵所構成之組群之元素的混合物所形成之合 金° 1 5 .如申請專利範圍第1 0項之方法,其中,該鍍覆方法為 電鍍法。 1 6 .如申請專利範圍第1 0項之方法,其中,該鍍覆方法為 無電鍍法。 1 7 .如申請專利範圍第1 0項之方法,其中,該鍍覆方法係 結合電鍍法以及無電鍍法。 1 8 .如申請專利範圍第1 0項之方法,復包括於該銲錫材料 沈積於該開口前,在該接觸銲墊上形成金屬墊之步驟 〇 1 9. 一種具有鍍銲錫之微銲墊間距有機電路板之製造方法 ,該方法包括: 提供一有機電路板,該電路板包含一表面,並於 該表面形成有至少兩接觸銲墊,且該表面並未形成有 絕緣保護層與導電線於該銲墊間; . 在該表面上形成導電晶種層, 、 在該導電晶種層上沈積阻層,並於該阻層相對應 於該銲墊處形成有至少兩開孔; 經由鍍覆的方法將銲錫材料沈積於該開孔;以及 移除該阻層與該阻層下之導電晶種層。 2 0 .如申請專利範圍第1 9項之方法,其中,該導電晶種層 係由選自銅、錫及錫-鉛合金所構成之組群織金屬所形 成。16974. ptci, page 25, 200409575, VI. Application scope < Alloys formed by a mixture of elements of the group consisting of indium, tellurium and gallium ° 15. The method according to item 10 of the scope of patent application, wherein: This plating method is a plating method. 16. The method according to item 10 of the scope of patent application, wherein the plating method is an electroless plating method. 17. The method according to item 10 of the scope of patent application, wherein the plating method is a combination of electroplating and electroless plating. 18. The method according to item 10 of the scope of patent application, further comprising the step of forming a metal pad on the contact pad before the solder material is deposited in the opening. 9. A micro-pad pitch with plated solder is organic. A method for manufacturing a circuit board, the method includes: providing an organic circuit board, the circuit board includes a surface, and at least two contact pads are formed on the surface, and the surface is not formed with an insulating protective layer and conductive wires. Between the pads;. Forming a conductive seed layer on the surface, depositing a resistance layer on the conductive seed layer, and forming at least two openings at the resistance layer corresponding to the pad; A method of depositing solder material in the opening; and removing the resist layer and a conductive seed layer under the resist layer. 20. The method according to item 19 of the patent application scope, wherein the conductive seed layer is formed of a group woven metal selected from the group consisting of copper, tin, and tin-lead alloy. 16974.ptd 第26頁 200409575 六、申請專利範圍 2 1 .如申請專利範圍第1 9項之方法,其中,該導電晶種層 係一多層結構。 2 2 .如申請專利範圍第2 1項之方法,其中,該多層結構係 由選自銅、錫、鎳、鉻、鈦、銅-鉻合金及錫-鉛合金 所構成之組群之金屬所形成。 2 3 .如申請專利範圍第1 9項之方法,其中,該銲錫材料係 由選自錯、錫、銀、銅、銀、銻、鋅、鎳、銘、鎂、 銦、碲及鎵所構成之組群之元素的混合物所形成之合 金。 2 4 .如申請專利範圍第1 9項之方法,其中,該鍍覆方法為 電鍍法。 2 5 ·如申請專利範圍第1 9項之方法,其中,該鍍覆方法為 無電鍍法。 2 6 .如申請專利範圍第1 9項之方法,其中,該鍍覆方法係 結合電鍍法以及無電鍍法。 2 7 .如申請專利範圍第1 9項之方法,復包括於該銲.錫材料 沈積於該開口前,在該接觸銲墊上形成金屬墊之步驟 〇 2 8. —種具有鍍銲錫之微銲墊間距有機電路板之製造方法 ,該方法包括: 提供一有機電路板,該電路板包含一表面,並於 該表面上形成至少一接觸銲墊,且該表面並未覆蓋有 絕緣保護層; 在該電路板表面上沈積阻層,並於該阻層相對應16974.ptd Page 26 200409575 VI. Scope of Patent Application 2 1. The method according to item 19 of the patent application scope, wherein the conductive seed layer has a multilayer structure. 22. The method according to item 21 of the scope of patent application, wherein the multilayer structure is made of a metal selected from the group consisting of copper, tin, nickel, chromium, titanium, copper-chromium alloy, and tin-lead alloy. form. 2 3. The method according to item 19 of the scope of patent application, wherein the solder material is composed of copper, tin, silver, copper, silver, antimony, zinc, nickel, aluminum, magnesium, indium, tellurium, and gallium An alloy formed by a mixture of elements of a group. 24. The method according to item 19 of the scope of patent application, wherein the plating method is an electroplating method. 25. The method according to item 19 of the scope of patent application, wherein the plating method is an electroless plating method. 26. The method according to item 19 of the patent application scope, wherein the plating method is a combination of electroplating and electroless plating. 27. The method according to item 19 of the scope of patent application, which includes the step of forming a metal pad on the contact pad before the solder material is deposited in the opening. 0 8. A micro-solder with plated solder A method for manufacturing a pad-pitch organic circuit board, the method comprising: providing an organic circuit board including a surface, and forming at least one contact pad on the surface, and the surface is not covered with an insulating protective layer; A resist layer is deposited on the surface of the circuit board, and corresponds to the resist layer 16974.ptd 第27頁 200409575 /六、申請專利範圍 於該銲塾處形成有至少一開孔; 經由無電鍍的方法將銲錫材料沈積於該開孔;以 及 移除該阻層。 2 9 .如申請專利範圍第2 8項之方法,其中,該銲錫材料係 由選自錯、錫、銀、銅、銀、銻、鋅、錄、銘、鎮、 銦、碲及鎵所構成之組群之元素的混合物所形成之合 金。 3 0 .如申請專利範圍第2 8項之方法,復包括於該銲錫材料 沈積前,將催化層(catalytic layer)沈積於該開孔之 步驟。 3 1.如申請專利範圍第3 0項之方法,其中,該催化層係由 鈀粒子所形成。 3 2. —種具有鍍銲錫之微銲墊間距有機電路板之製造方法 ,該方法包括: 提供一有機電路板,該電路板包含一表面·,並於 該表面上形成有至少兩接觸銲墊,且該表面並未形成 有絕緣保護層與導電線於該銲墊間; 在該電路板表面上沈積阻層,並於該阻層相對應 於該銲墊處形成有至少兩開孔; 經由無電鍍的方法將銲錫材料沈積於該開孔;以 及 移除該阻層。 3 3 .如申請專利範圍第3 2項之方法,其中,該銲錫材料係16974.ptd Page 27 200409575 / VI. Patent application scope At least one opening is formed in the solder joint; a solder material is deposited in the opening through an electroless plating method; and the resist layer is removed. 29. The method according to item 28 of the scope of patent application, wherein the solder material is composed of copper, tin, silver, copper, silver, antimony, zinc, copper, metal, town, indium, tellurium, and gallium An alloy formed by a mixture of elements of a group. 30. The method according to item 28 of the scope of patent application, further comprising a step of depositing a catalytic layer on the openings before the solder material is deposited. 31. The method of claim 30 in the scope of patent application, wherein the catalytic layer is formed of palladium particles. 3 2. —A method of manufacturing a micro-pad pitch organic circuit board with solder plating, the method comprising: providing an organic circuit board, the circuit board including a surface, and forming at least two contact pads on the surface And the surface is not formed with an insulating protection layer and a conductive wire between the bonding pads; a resistance layer is deposited on the surface of the circuit board, and at least two openings are formed at the resistance layer corresponding to the bonding pads; An electroless method deposits a solder material on the opening; and removes the resist layer. 3 3. The method according to item 32 of the scope of patent application, wherein the solder material is 16974.ptd 第28頁 200409575 六、申請專利範圍 由選自錯、錫、銀、銅、銀、録、鋅、錄、铭、鎮、 銦、碲及鎵所構成之組群之元素的混合物所形成之合 金° 3 4 .如申請專利範圍第3 2項之方法,復包括於該銲錫材料 沈積前,將催化層(catalytic layer)沈積於該開孔之 步驟。 3 5 .如申請專利範圍第3 4項之方法,其中,該催化層係由 ί巴粒子所形成。16974.ptd Page 28, 200409575 6. The scope of the patent application is a mixture of elements selected from the group consisting of tin, tin, silver, copper, silver, zinc, zinc, zinc, inscriptions, towns, indium, tellurium and gallium. The formed alloy ° 3 4. The method according to item 32 of the patent application scope further comprises the step of depositing a catalytic layer on the openings before the solder material is deposited. 35. The method according to item 34 of the scope of patent application, wherein the catalytic layer is formed of palladium particles. 16974.ptd 第29頁16974.ptd Page 29
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US9305875B2 (en) 2013-01-28 2016-04-05 Fujitsu Limited Method of manufacturing semiconductor device capable of enhancing bonding strength between connection terminal and electrode

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US10588214B2 (en) 2017-05-09 2020-03-10 Unimicron Technology Corp. Stacked structure and method for manufacturing the same
US10178755B2 (en) 2017-05-09 2019-01-08 Unimicron Technology Corp. Circuit board stacked structure and method for forming the same
US10950535B2 (en) 2017-05-09 2021-03-16 Unimicron Technology Corp. Package structure and method of manufacturing the same
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US9305875B2 (en) 2013-01-28 2016-04-05 Fujitsu Limited Method of manufacturing semiconductor device capable of enhancing bonding strength between connection terminal and electrode
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