TW519859B - Method of forming electroplated solder on organic circuit board - Google Patents

Method of forming electroplated solder on organic circuit board Download PDF

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Publication number
TW519859B
TW519859B TW91114252A TW91114252A TW519859B TW 519859 B TW519859 B TW 519859B TW 91114252 A TW91114252 A TW 91114252A TW 91114252 A TW91114252 A TW 91114252A TW 519859 B TW519859 B TW 519859B
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Taiwan
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circuit board
organic
layer
solder
metal
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TW91114252A
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Chinese (zh)
Inventor
Shu-Huei Huang
Yin-Tung Wang
Yi-Jung Dung
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Phoenix Prec Technology Corp
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Publication of TW519859B publication Critical patent/TW519859B/en

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Abstract

A method of forming electroplated solder on the organic circuit board is disclosed in the present invention and can be applied in the formation of flip-chip package. According to the invented method, an organic circuit board having circuit layout on its surface is provided, and at least one contact pad is installed on the organic circuit board. The circuit board surface is covered with an organic insulation layer (solder mask layer), which is then patterned to form an opening at the corresponding pad position on the organic circuit board. Then, a metal seed layer is formed on the circuit board surface, in which the metal seed layer is formed by using the manner of physical vapor deposition, chemical vapor deposition or electroless plating with the incorporation of catalytic copper, or the electroplating with the incorporation of catalytic copper. Thus, a plating resist layer can be formed to cover the metal seed layer and expose the opening stated above. Finally, a metal barrier layer is formed along the opening surface and is followed by forming solder material inside the opening by electroplating. The plating barrier layer and the metal seed layer under the plating barrier layer are removed so as to complete the electroplated solder on the circuit board.

Description

519859519859

發明領域: .本發明係有關於一種於有機電路板(printed circuit board or substrate)上進行電鍍銲錫之方法, 寺別是應用於形成覆晶封裝,在電路板上進行電鍍銲錫用 以形成覆晶封裝及電路板間之銲接。 發明背景: 自1M公司在1 9 6 0年早期揭露出覆晶(flip-chip )封 ς技術以來,覆晶封裝元件即主要設置在價格昂貴之陶瓷 ^板上’於此結構η日日片與㈣電路板間的熱膨服 骨係則由於差異小因此在使用上並不致於造成明顯的可 二問題。其與一般打金線(wire —b〇nding )封裝方式相比 二,覆晶方式可提供較高的封裝密度(低元件輪廓)及 ^丨生性此(較紐的導線與低電感)。有鑑於此,業界覆曰曰 、裝技術已使用高溫銲錫於陶瓷電路板上有4 〇年之久,: 所謂控制崩解晶片連接技術(c〇ntr〇卜c〇1Upse chip 1〇n,> C4 )。然而近年來,在現代電子產品漸小化 度、咼速度及低成本的趨勢下,將覆晶元件鑲嵌於 低成本之有機電路板上,並利用環氧樹脂底膠(印、 1 U )填充於晶片下方以減輕由矽晶片與有機電路 j結構間的熱應力所產生之不協調,6呈現出爆炸性的路 而業界矚目的低溫覆晶銲接與有機電路板之利用, 可使業界得以達到低成本覆晶封裝之目的。 在一般低成本之覆晶封裝技術中,半導體IC晶片的 五、發明說明(2) 上層表面係有若干銲墊 & 對-致性的接觸窗(c二::十二有機電路板亦有若干相 係有低溫銲* μ ^ °又^,在晶片與電路板間 塾面係朝下並鑲嵌於電路性ΐ者材設置,且晶片具鲜 著材提供晶片:電路板η #中銲錫凸塊或導電性黏 ^ slZ 板間的電性輸出/輸入及機械性連 有機底膠(underfiU ) ^與電路板間的間隙可填入之 降低銲錫接之應力。 藉此可壓制熱膨脹之不協調及 塊,将:。,為使銲錫接形成覆晶裝配,通常金屬凸 片之電;ί塊、金凸塊或銅凸塊等,係預先形成於晶 ^ u Ν η -面上,而其中凸塊可為任何形狀,係如釘 4¾ Λ & / +球形凸塊、柱狀凸塊或其他形狀。而對應的銲 稱;銲錫凸塊(ρ—)則通常使 用低酿鋅錫,亦形成於電路板之接觸銲墊上。在一迴焊 (refl0w)溫度下,晶片以銲錫接與電路板鍵結在一起, :在晶片與電路板間佈設底膠之後,覆晶元件即完成製 作。而以銲錫接形成覆晶元件之典型例子可參考圖一入至 圖二B所示。參閱圖-A及圖所示其係為應用金屬凸塊 及預銲錫凸塊之典型例子。金屬凸塊1〇1係形成於晶片1〇3 之電極銲墊102上,而以低溫銲錫形成之預銲錫凸塊1〇4, =形成於電路板1〇6之接觸銲墊1〇5上,如圖一A所示。接 著在一迴焊溫度使熔解暨重塑預銲錫凸塊1〇4以形成銲錫 接107 (solder joint )。在佈設底膠(underfU1 ) 1〇8 於晶片103與電路板1〇6之間隙後,所述之覆晶元件1〇〇於FIELD OF THE INVENTION: The present invention relates to a method for electroplating solder on an organic circuit board (printed circuit board or substrate). The method is used to form a flip-chip package, and electroplating solder is used to form a flip-chip on a circuit board. Solder between package and circuit board. Background of the Invention: Since 1M Company revealed the flip-chip sealing technology in the early 1960s, flip-chip packaging components have been mainly installed on expensive ceramic plates. Due to the small difference between the thermal expansion bone system and the circuit board, it does not cause obvious problems in use. Compared with the general wire-bonding packaging method, the flip-chip method can provide a higher packaging density (low component outline) and high flexibility (more wire and low inductance). In view of this, the industry has said that the packaging technology has used high-temperature solder on ceramic circuit boards for 40 years: the so-called control chip disassembly connection technology (c〇ntr〇 卜 c〇1Upse chip 1〇n, & gt C4). However, in recent years, under the trend of modern electronic products becoming smaller, faster and cheaper, chip-on-chip devices are embedded in low-cost organic circuit boards and filled with epoxy primer (print, 1 U). Beneath the chip to reduce the inconsistency caused by the thermal stress between the silicon wafer and the structure of the organic circuit j, 6 presents an explosive path and the industry's attention to the use of low-temperature flip-chip soldering and the use of organic circuit boards can enable the industry to achieve low The purpose of cost flip chip packaging. In the general low-cost flip-chip packaging technology, the semiconductor IC chip's fifth, invention description (2) There are several pads on the upper surface & anti-consistent contact windows (c 2 :: twelve organic circuit boards also have Several phases have low-temperature soldering * μ ^ ° and ^, the surface between the wafer and the circuit board is face down and embedded in the circuit board, and the wafer is provided with a fresh material to provide the wafer: circuit board Block or conductive adhesive ^ slZ Electrical output / input between boards and mechanically connected organic underfiU (underfiU) ^ The gap between the board and the circuit board can be filled to reduce the stress of solder joints. This can suppress the incoordination of thermal expansion. And blocks, will be: In order to make the solder joints form flip-chip assembly, the electricity of metal bumps is usually used; ί blocks, gold bumps, or copper bumps, etc., are formed in advance on the crystal ^ u Ν η-surface, where The bumps can be of any shape, such as nails 4¾ Λ & / + spherical bumps, columnar bumps, or other shapes. The corresponding welding name; solder bumps (ρ—) usually use low-alloy zinc tin, also It is formed on the contact pad of the circuit board. At a refl0w temperature, the chip is soldered. The circuit boards are bonded together: after the primer is laid between the wafer and the circuit board, the chip-on-chip component is completed. A typical example of forming a chip-on-chip component by soldering can be shown in Figure 1 to Figure 2B. See Figure-A and the figure show typical examples of the application of metal bumps and pre-solder bumps. The metal bumps 101 are formed on the electrode pads 102 of the wafer 103, and the pre-forms are formed by low-temperature solder. The solder bump 104 is formed on the contact pad 105 of the circuit board 106 as shown in FIG. 1A. Then, the pre-solder bumps 104 are melted and reshaped at a reflow temperature. A solder joint 107 (solder joint) is formed. After laying an underfoil U10 on the gap between the wafer 103 and the circuit board 106, the chip-on-chip device 100

第6頁 519859Page 6 519859

五、發明說明(3) 焉完成,如圖一 B所不。 再參閱圖二A及圖二B所示其係為另一應用預銲錫凸塊 之典型例子。銲錫凸塊201係形成於晶片203之電極銲塾 202上,而晶片203在一迴焊溫度下與電路板2 〇6鍵結,且 此時銲錫接207形成於接觸銲墊205上,如圖二A所示。同 樣地,在佈設底膠2 0 8於晶片2 0 3與電路板2 〇 6之間隙後, 即完成覆晶元件2 0 0,如圖二B所示。 一般而言,形成預銲錫凸塊於電路板上之最常見方法 為模版印刷法(stencil printing)。一些參考資料揭露 模版印刷法技術可參考U.S. Pat. No. 5,203,075 (c/Γ Angulas et al), 5,492,266 (K. G. Hoebener et al) 與 5,828,128 (Y· Higashiguchi et al)。覆晶裝配之銲 ,凸塊技術之選用則包含凸塊間距與尺寸縮小化之雙重考 量。根據實際經驗,當凸塊間距在〇 · 15 mm以下時,模版 印刷法即產生製作之困難,而必須改採電鍍法製作習知有 關於覆晶封裝在電路板上製作電鍍凸塊之技術,則可參 考U.S· Pat. Ν〇·5,391,514 (Τ· P. Gall et al)與 , , (Κ· G· Hoebener et al)。然而雖然以電鍛法 ,電路板上製作之銲錫凸塊之間距較模版印刷法佳,但實 施上仍有一些缺點存在,例如在銲錫凸塊之製程中,有機 絕緣保護層必須不受傷害,以避免影響產品可靠度。同 ,^電鍍及凸塊高度之一致性必須加以掌控。而這些細節 部分在 U.S. Pat· N〇.5,391,514 及5 48〇 835 皆未被揭 露。V. Description of the invention (3) 焉 Completed, as shown in Figure 1B. Referring again to FIG. 2A and FIG. 2B, this is another typical example of the application of pre-solder bumps. The solder bump 201 is formed on the electrode pad 202 of the wafer 203, and the wafer 203 is bonded to the circuit board 206 at a reflow temperature. At this time, the solder joint 207 is formed on the contact pad 205, as shown in the figure. As shown in two A. Similarly, after laying the primer 208 on the gap between the wafer 203 and the circuit board 206, the flip chip device 200 is completed, as shown in FIG. 2B. Generally speaking, the most common method for forming pre-solder bumps on circuit boards is stencil printing. Some reference materials disclose stencil printing techniques can refer to U.S. Pat. No. 5,203,075 (c / Γ Angulas et al), 5,492,266 (K. G. Hoebener et al) and 5,828,128 (Y. Higashiguchi et al). For flip-chip assembly welding, the choice of bump technology includes dual considerations of bump pitch and size reduction. According to actual experience, when the bump pitch is less than 0.15 mm, the stencil printing method will cause production difficulties, and the electroplating method must be used instead. Known technology about flip-chip packaging to produce plated bumps on circuit boards. See US Pat. No. 5,391,514 (T. P. Gall et al) and (K G Hoebener et al). However, although the distance between the solder bumps produced on the circuit board is better than the stencil printing method by electroforging, there are still some shortcomings in implementation. For example, in the process of solder bumps, the organic insulating protective layer must not be damaged. To avoid affecting product reliability. At the same time, the consistency of plating and bump height must be controlled. These details were not disclosed in U.S. Pat. No. 5,391,514 and 5 4880 835.

第7頁 赞明說明(4) 有鑪於此’本發明#接 路板上之方沬朴 係鈥供一種形成電鍍銲錫於右媸中 凸;L不但不會傷害有機絕緣保護層,ίΐί:;:電 口槐局度之一致性。 I j徒供電鍍及 發明之簡要說明: 本發明之主要目的在 屉路板上之方法,其係在 曰,而不傷害有機絕緣保 晶封裴元件與電路板間或 本發明之另一目的在 電路板上之方法,其係於 層及鲜錫之方法。 本發明之再一目的在 電路板上之方法,其係以 種層之方法。 本發明之再一目的在 電路板上之方法,其係以 種層之方法。 本發明之再一目的在 (electroless plating) 其中有機絕緣保護層與銲 之水溶性溶液,還原該銅 銅之輔助,金屬晶種層可 於提供一種形成電鍍銲锡於有機 5機電路板上形成一金屬晶種 護層,形成電鍍銲錫用以製作覆 電路板與電路板間之銲接。 於提供一種形成電鍍銲錫於有機 有機電路板上進行電鍍金屬阻障 於提供一種形成電鍍銲錫於有機 一物理氣相沈積方式形成金屬晶 於提供一種形成電鍍銲錫於有機 一化學氣相沈積方式形成金屬晶 於提供一種以無電鍍 方式形成金屬晶種層之方法, 塾之表面係覆有至少包含鋼離子 離子以形成一催化銅。藉由催化 以無電鍍方式形成。 519859 五、發明說明(5) 本發明之再一目的在 一 晶種層之方法,A中 =仏種以電鍍方式形成金屬 至少包含鋼離子;t 絶緣保護層與銲墊之表面係覆有 :銅。藉由催化铜之辅助以形成-催 式形成。以該第一簿 f溥金屬層可以無電鍍方 電鍍方式形成。而全厲a…電極,—第二薄金屬層可以 薄金屬層。成而金屬晶種層即包含第-薄金屬層及第二 有機電形成電錢銲錫於 接。首先係提供表面上=裝:電路板間之鲜 有機電路板上其係設有至少一銲 有機電路板,該 板表面覆有-有機絕緣保護 保護層,使得該有機絕緣保護層曰於相 形:」令屬曰ρ』,处形成一開口;接著’在電路板表面 =成金屬曰曰種(metal seed) I,其係以物理氣相沈 積、化學氣相沈積或無電鍍搭配催化鋼,或是電鑛搭配催 化鋼方式所形成’由此可形成一電鍍阻層(resist)覆在 該金屬晶種層上’且裸露出所述該開口。最後,产該^口 表面形成一金屬阻障層再以電鍍方式形成鲜錫材口 内’移除所述之電鑛阻層及其下之金屬晶種層,於該電路 板上完成電鍍銲錫。 為了使貴審查委員對本發明之目的、特徵及功效, 有更進一步的瞭解與認同,茲配合圖式詳加說明如後:Note on page 7 (4) There is a furnace in the present invention. # 方 方 朴 系 on the circuit board provides a way to form electroplated solder in the right ridge; L will not only harm the organic insulating protective layer, ΐ :: Consistency of electrical location. Brief description of the invention of power plating and invention: The main purpose of the present invention is the method of the drawer circuit board, which does not harm the organic insulation and crystal-protecting sealing element and the circuit board or another object of the present invention. The method on the circuit board is the method of layer and fresh tin. Another object of the present invention is a method for a circuit board, which is a seed layer method. Another object of the present invention is a method for a circuit board, which is a seed layer method. Another object of the present invention is to provide electroless plating in which a water-soluble solution of an organic insulating protective layer and a solder is used to reduce the copper and copper. A metal seed layer can be formed by providing an electroplated solder on an organic 5 machine circuit board. A metal seed protective layer is used to form electroplated solder for making soldering between the circuit board and the circuit board. Provided is a method for forming a plated solder on an organic organic circuit board to provide metal plating barriers. Provides a method for forming a plated solder on organic-physical vapor deposition to form metal crystals. Provides a method for forming a plated solder on organic-chemical vapor deposition to form metals. Jingyu provides a method for forming a metal seed layer by electroless plating. The surface of the gadolinium is coated with at least steel ion to form a catalytic copper. Formed electrolessly by catalysis. 519859 V. Description of the invention (5) Yet another object of the present invention is a method for a seed layer, in which A = the metal is formed by electroplating to contain at least steel ions; t the surface of the insulating protective layer and the pad is covered with: copper. Formation-catalyzed formation is assisted by catalytic copper. The first f 溥 metal layer can be formed by electroless plating. And all a ... electrodes, the second thin metal layer can be a thin metal layer. The formed metal seed layer includes a first thin metal layer and a second organic electricity to form an electrical solder. First of all, it is provided on the surface = mounting: fresh organic circuit board between circuit boards is provided with at least one soldered organic circuit board, the surface of the board is covered with -organic insulation protection protective layer, so that the organic insulation protection layer is phase-shaped: "Let's belong to ρ", an opening is formed there; and then 'on the surface of the circuit board = metal seed I, which is a physical vapor deposition, chemical vapor deposition or electroless plating with catalytic steel, or It is formed by the method of electricity ore and catalytic steel, thereby forming a plating resist layer on the metal seed layer, and exposing the opening. Finally, a metal barrier layer is formed on the surface of the substrate, and a fresh tin material is formed by electroplating to remove the electrical resistance layer and the metal seed layer thereunder, and electroplated solder is completed on the circuit board. In order for your reviewers to further understand and approve the purpose, features, and effects of the present invention, the detailed description with the drawings is as follows:

519859 五、發明說明(6) 詳細說明: 為了使貴審查委員對本發明之目的、特n月访$ 有更進一步的瞭解與認同,茲配人 a徵及力效, 然,本發明可以多種不同坪加說明如後。當 中所述内容。 方式貫施’並不只限於本說明書 本發明係有關於一種形成雷辦{曰 u ^ ^ # γ γ Λ、目&風冤鍍鋅錫凸塊於有機電路板 =ΐ電鑛一致性之銲錫凸塊,但卻 依實際尺度描繪,亦即未反映出晶片1= 中’各層次之實際尺寸與特色,合先敘明。 請參閱圖三A至三F所示,其係為本發明第一較佳實施 例於電路板上進行電鍍銲錫之方法示意圖。於本發明較佳 實施例中,首先提供表面上具有電路佈局之一有機電路板 1,該有機電路板1之表面上其係設有至少一接觸銲墊2。 其中作為有機電路板1係可由有機材質、纖維強化 (fiber-reinf0rced)有機材質或顆粒強化(particie — reinforced)有基材質等所構成,如環氧樹脂(ep〇xy resin )、聚乙醯胺(p〇iyimide )、雙順丁稀二酸醯亞 胺/ 二氮阱(bismaleimide triaz ine-based )樹脂、氰 酉曰(cyanate ester) 、p〇lybenzoCyCi〇butane 或其玻璃 纖維(glass fiber)之複合材料等。而所述之接觸銲墊2 係典型以金屬材料形成,係如銅。並沈積一有機絕緣保護 層3 (solder mask layer)在所述電路板1表面以保護電 路佈局並提供絕緣作用,之後再將該有機絕緣保護層3加519859 V. Description of the invention (6) Detailed description: In order for your review committee to have a better understanding and approval of the purpose of the present invention and special visits, we hereby assign a person with the characteristics and effectiveness. However, the present invention can be various Pingjia explained later. As described in. The method of implementation is not limited to this specification. The present invention relates to a solder that forms a thunderbolt {say u ^ ^ # γ γ Λ, mesh & wind zinc galvanized tin bumps on an organic circuit board = ΐelectric ore consistent solder The bumps, however, are drawn according to the actual scale, that is, they do not reflect the actual size and characteristics of each level of the chip 1 = in the middle, which will be described first. Please refer to FIG. 3A to FIG. 3F, which are schematic diagrams of a method for electroplating solder on a circuit board according to the first preferred embodiment of the present invention. In a preferred embodiment of the present invention, an organic circuit board 1 having a circuit layout on the surface is first provided, and at least one contact pad 2 is provided on the surface of the organic circuit board 1. Among them, the organic circuit board 1 can be composed of organic materials, fiber-reinf0rced organic materials, or particle-reinforced (particie-reinforced) base materials, such as epoxy resin, polyethyleneamine (P〇iyimide), bismaleimide triazine / based nitrogen resin (bismaleimide triaz ine-based) resin, cyanate ester, p〇lybenzoCyCi〇butane or glass fiber (glass fiber) Composite materials, etc. The contact pad 2 is typically formed of a metal material, such as copper. An organic insulating protective layer 3 (solder mask layer) is deposited on the surface of the circuit board 1 to protect the circuit layout and provide insulation, and then the organic insulating protective layer 3 is added.

第10頁 519859 五、發明說明(7) ' 以圖案化,使得該有機絕緣保護層3於相對應該接觸銲墊 (pad ) 2處形成一開口6,如圖三a所示。 二為此在一非導電之表面上電鍍形成銲錫凸塊,在電鍍 之前,必須先在該非導電表面上形成一導電晶種層(seed layer)在般電路板業界,該晶種層常以無電鍍沈積 形成,在此過程中,其表面必須先浸沒在化學溶液中,以 ,成催化性表面(亦即敏化劑(sensiUzer ),氣化錫、 氯化鈦等;以及活化劑(activat〇r),係如酸化氣化 鈀、酸化氯化金、酸化氯化銀等),然後再浸沒於盔電鍍 溶液形成一導電晶種層。藉助該晶種層,金屬凸塊即可以 電鍍方式形成。然而,以無電鍍在有機電路板上形成晶種 層仍有一些缺點:其一是該有機電路板暴露在化學溶液 中’亦即敏化劑溶液、活化劑溶液以及無電鍍溶液中,將 導致有絕緣保護層受到侵蝕性傷害,而使得電路板之可靠 度降低;其二是敏化劑溶液及活化劑溶液通常包含有大量 之氯離子’其容易穿透該有機保護層,且在浸沒步驟之後 會滯留於該保護層中’易導致電路板之可靠度降低;另一 問題則是,惰性金屬,亦即鈀、金、銀等,通常係作為非 導體表面上扮演一催化金屬之角色,所以也就難以自保護 層表面移除’且容易形成殘渣在其表面;同時,蝕刻所述 惰性金屬亦容易傷害到該有機保護層。在此情形中,有機 電路板之可靠度也就成為難題。 為避免上述傷害有機保護層之問題產生,本發明係提 供一種形成金屬晶種層之方法,且不需使電路板浸沒於化Page 10 519859 V. Description of the invention (7) ′ The pattern is formed so that the organic insulating protective layer 3 forms an opening 6 at a position corresponding to the contact pad 2, as shown in FIG. 3 a. Secondly, a solder bump is formed by electroplating on a non-conductive surface. Before electroplating, a conductive seed layer must be formed on the non-conductive surface. In the general circuit board industry, the seed layer is often Electroplating is formed. In this process, the surface must be immersed in a chemical solution to form a catalytic surface (ie, a sensitizer (sensiUzer), vaporized tin, titanium chloride, etc .; and an activat. r), such as acidified gasified palladium, acidified gold chloride, acidified silver chloride, etc., and then immersed in the helmet plating solution to form a conductive seed layer. With this seed layer, metal bumps can be formed by electroplating. However, there are still some disadvantages to forming a seed layer on an organic circuit board by electroless plating. One is that the organic circuit board is exposed to a chemical solution, that is, a sensitizer solution, an activator solution, and an electroless plating solution, which will result in An insulating protective layer is eroded, which reduces the reliability of the circuit board. The second is that the sensitizer solution and the activator solution usually contain a large amount of chloride ions, which easily penetrate the organic protective layer, and are in the immersion step. After that, it will stay in the protective layer, which will easily reduce the reliability of the circuit board. Another problem is that inert metals, that is, palladium, gold, and silver, usually play the role of a catalytic metal on the surface of non-conductors. Therefore, it is difficult to remove from the surface of the protective layer, and it is easy to form a residue on the surface; at the same time, etching the inert metal also easily hurts the organic protective layer. In this case, the reliability of the organic circuit board becomes a problem. In order to avoid the above-mentioned problem of damaging the organic protective layer, the present invention provides a method for forming a metal seed layer without immersing the circuit board in the substrate.

第11頁 519859 五、發明說明(8) 學溶液中。本發明係以金屬層作為晶種層,係以物 沈積或化學物理氣相沈積,係如濺鍍(sputtering)、蒸 發(evaporation)、電弧蒸發(arc vap〇r deposition)、離子鍍(ion beam sputtering)、雷射 蒸鍍(laser ablation deposition)、電漿輔助化學器 相沉積(plasma enhanced CVD)及有機金屬化學相沉積 (Metallorganic CVD)等,在有機電路板之表面上形成 一金屬層。接續所述則是利用該晶種層形成電鍍銲錫凸塊 於有機電路板上之製程。 ,參閱圖三B所示,其係藉由上述之方法步驟將圖三a表 面形狀被覆上一金屬晶種層4於該有機電路板丨上。接著將 =鑛阻層5(可為有機*阻材料)沈積並覆蓋在金屬晶 種:上,且使得該開口6裸露出來。而圖三^所示,其係 :该:’ 口6表面形成一金屬阻障層7,該金屬阻障層?常包 二 之黏著層與一由金所組成之保護層。然 ^ )、踢(Sn)、絡〜(Cr/T"、銻^ (二)…艮、 電Λ Γ Γ /錄/把/金(Ni /Pd/Au)等,其係可以 ”(electr〇Plating)、無電鑛(elec 式填入-銲錫請於該二方内式开:成圖。:再…^ 除所述移除所述之電鍍阻層5以内及電如:阻二二所示。接著移 層4,如圖三Ε所示。最後,名一、又、曰下之金屬晶種 銲錫材料8,以形成f ^ # Q 、烊溫度下熔解並重塑該 I成杯錫凸塊9於接觸銲墊2上,如圖三〇斤Page 11 519859 V. Description of the invention (8) In solution. The invention uses a metal layer as a seed layer, and uses physical deposition or chemical physical vapor deposition, such as sputtering, evaporation, arc vapor deposition, and ion beam. A metal layer is formed on the surface of the organic circuit board by sputtering, laser ablation deposition, plasma enhanced CVD, and metallorganic CVD. The following is a process of forming a plated solder bump on an organic circuit board by using the seed layer. Referring to FIG. 3B, the surface shape of FIG. 3a is covered with a metal seed layer 4 on the organic circuit board through the method steps described above. Then, a mineral resistance layer 5 (which may be an organic resistance material) is deposited and covered on the metal seed crystal :, and the opening 6 is exposed. As shown in FIG. 3 ^, the system is: a metal barrier layer 7 is formed on the surface of the port 6. The metal barrier layer? Often the second adhesive layer and a protective layer of gold. Then ^), kick (Sn), network ~ (Cr / T ", antimony ^ (two) ... gen, electricity Λ Γ Γ / record / handle / gold (Ni / Pd / Au), etc., it can be "(electr 〇Plating), electroless ore (elec-type filling-soldering please open in this two-party type: drawing .: Then ... ^ In addition to the removal of the electroplating resist layer 5 mentioned above and electricity such as: resistance two two Then, the layer 4 is shifted, as shown in FIG. 3E. Finally, the first, second, and lower metal seed solder material 8 is formed to form f ^ # Q, which melts and reshapes the I into cup tin at a temperature of 烊. The bump 9 is on the contact pad 2, as shown in FIG. 30.

519859519859

示〇 至少例所述之該金屬阻障層7可為由下列 而該金屬3曰曰種層:可°為而成·金八、鎳?、鋼、鈷與銘等。 成,係如鋼、鉾二/ 入或登層多層金屬所組 (雙金屬声、辟 鉻銅合金、鉛錫合金、錫/銅 屬係如金:i:r、v鉻/…金/鋼等,然而惰性金The metal barrier layer 7 described in at least the examples can be the following and the metal 3 is a seed layer: can be made of gold, nickel, nickel? , Steel, cobalt and Ming. It is composed of steel, aluminum alloy, or multilayer metal (bimetallic sound, chrome copper alloy, lead-tin alloy, tin / copper system such as gold: i: r, v chromium / ... gold / steel Wait, however inert gold

Sr種層4之,,因在_移:這心/ ;。且ίί::金屬晶種層4之較佳厚度係在。.1 mm: 鉛、錫、ΪΓ、較佳者可為由下列金屬所組成之合金: 等。在迴焊過二德鉍、銻、鋅、鎳、鋁、錳、銦、碲與鎵 除助溶l可再以一清潔步驟’係如超音波,清 晶種匕的:列’Λ金屬晶種層4以較薄者為佳。因薄金屬 曰曰,層4在蝕刻液中可較快移除,也就使 ^ t ^ ^ M^ t Λ 與該銲錫材料8祜舳釗、杰作& a < — π风、巴緣保4層3 圍。傷害的程度將減少至可接受的範 2方面,在迴焊過程中當該金屬晶種層4(如 =^谷入於該銲錫材料8中,該鲜錫 =金,而該較薄薄金屬晶種層4會將有少 踢;。:錫 ::凸塊9中;因此,在此情況下,該銲錫凸塊9::= =易。=多。以實務經驗而言,該金屬晶二 擇則可於一如冬士 〇〇05咖者為最佳。而蝕刻液的成分選 、;又金相學(metal 1〇graphy )技術書中得知,Sr seed layer 4, because in _ shift: this heart /;. And ίί :: The preferred thickness of the metal seed layer 4 lies in. .1 mm: Lead, tin, ΪΓ, preferably an alloy of the following metals: etc. After re-soldering di-bismuth, antimony, zinc, nickel, aluminum, manganese, indium, tellurium, and gallium, it can be removed and dissolved in a cleaning step, such as ultrasound, clear seed crystals: column 'Λ metal crystal The seed layer 4 is preferably thinner. Because of the thin metal, the layer 4 can be removed relatively quickly in the etching solution, which makes ^ t ^ ^ M ^ t Λ and the solder material 8 祜 舳 Zhao, masterpiece & a < — π wind, edge 4 floors and 3 walls. The degree of damage will be reduced to an acceptable level 2. During the reflow process, when the metal seed layer 4 (such as = ^ is embedded in the solder material 8, the fresh tin = gold, and the thinner metal The seed layer 4 will have less kick; :: tin :: bump 9; therefore, in this case, the solder bump 9 :: = = easy. = More. In practical terms, the metal crystal The second choice is best in the case of Dongshi 005. The composition of the etching solution is also selected; and the metallography (metal 10graphy) technical book shows that

519859 五、發明說明(ίο) 係如,丨 Metal lographic etching'1 , Gunter Petzow, American Society for Metals, Metals Park, Ohio, (1978)。 所述之該金屬晶種層4亦可以無電鍍或電鍍方式形 成,催化金屬不應用惰性金屬,而是以銅作為催化金屬。 典型的非導電表面上形成催化銅之例子,於U. s. Pat·519859 Fifth, the invention description (ίο) is, such as, Metal lographic etching'1, Gunter Petzow, American Society for Metals, Metals Park, Ohio, (1978). The metal seed layer 4 can also be formed by electroless plating or electroplating. The catalytic metal does not use an inert metal, but uses copper as the catalytic metal. An example of the formation of catalytic copper on a typical non-conductive surface, in U. s. Pat ·

No· 3,993,491與3,993,848中皆有揭露。而藉助於催化銅 表面,所述之該金屬晶種層4可以無電鍍形成。當然,該 金屬晶種層4亦可在短週期之無電鍍之後,再以電鍍形 成,開始時,催化銅形成於一非導電表面上,再以電鍍形 成一第一薄金屬層於該催化銅上,之後再以一第二薄金屬 層形成於該第一薄金屬層上,因此,該金屬晶種層4即包 含有一第一及第二薄金屬層。此外,該有機絕緣保護層3 之傷害亦可減緩,因該催化銅(非惰性金屬)可輕易自蝕 刻液中移除。經由上述無電鍍或電鍍製程,所述之該銲錫 凸塊9即可形成於有機電路板1上。 所述之該有機絕緣保護層3並非限定必須覆蓋部分接 觸銲墊2之表面。參閱圖四a,所述之該有機絕緣保護層3& 沈積在該有機電路板la之表面,但並未覆蓋住接觸銲墊2a 表面之任何部分。完成所述該金屬晶種層4 a與具開口 6 &之 該電鍍阻層5a,再將該金屬阻障層7a沿該開口 6a表面形 成,接著於開口 6a内形成電鍍銲錫材料ga。在移除電鍍阻 層5a與該金屬晶種層4a之後,所述之銲錫凸塊9a可在迴焊 製程中完成。然而因該金屬晶種層4a在銲錫凸塊内之溶解No. 3,993,491 and 3,993,848 are disclosed. By means of the catalytic copper surface, the metal seed layer 4 can be formed by electroless plating. Of course, the metal seed layer 4 can also be formed by electroplating after a short period of electroless plating. At the beginning, catalytic copper is formed on a non-conductive surface, and then a first thin metal layer is formed on the catalytic copper by electroplating. Then, a second thin metal layer is formed on the first thin metal layer, so the metal seed layer 4 includes a first and a second thin metal layer. In addition, the damage of the organic insulating protective layer 3 can also be reduced, because the catalytic copper (non-inert metal) can be easily removed from the etching solution. Through the above electroless plating or electroplating process, the solder bump 9 can be formed on the organic circuit board 1. The organic insulating protective layer 3 is not limited to cover the surface of the contact pad 2 in part. Referring to FIG. 4a, the organic insulating protection layer 3 is deposited on the surface of the organic circuit board 1a, but does not cover any part of the surface of the contact pad 2a. The metal seed layer 4a and the plating resist layer 5a having an opening 6 & are completed, the metal barrier layer 7a is formed along the surface of the opening 6a, and then a plating solder material ga is formed in the opening 6a. After the plating resist layer 5a and the metal seed layer 4a are removed, the solder bump 9a can be completed in a reflow process. However, due to the dissolution of the metal seed layer 4a in the solder bump

第14頁 519859 五、發明說明(11) 度差異性,亦同樣會有兩不同現象··以較低熔解度而言, 所述之該金屬晶種層4a在迴焊製程之後仍會存在,如圖四 B所示’·相對地,以較高熔解度而言,所述之該金屬晶種 層4a在迴焊製程之後則會消逝,如圖四c所示。 所述之接觸銲墊2係非限定於任何形狀與尺寸。如圖 其〜顯示有機電路板lb最上三層電路層11。而 接觸如墊2b之表面與絕緣層12之表面係在同一 積一有機絕緣保護層3b,並使之圖案化以 獅。而垂直以之電路線13係料以所謂的層接通觸孔知 stacked via )技術完成。而該銲錫凸塊91)亦曰 所提方式形成於接觸銲墊“上,如圖五6所示。 別述 本發明形成電鍍銲錫於有機電路板上 下列優點: 々次,係具有 ("本::在有機電路板上形成銲 ::傷害有機保護層,並可提供電鑛凸A: 一 (2 )本發明提供形成金屬晶種層之方Page 14 519859 V. Description of the invention (11) There are also two different phenomena in the same degree .... In terms of lower melting, the metal seed layer 4a will still exist after the reflow process. As shown in FIG. 4B, relatively speaking, in terms of higher melting, the metal seed layer 4a will disappear after the reflow process, as shown in FIG. 4c. The contact pads 2 are not limited to any shape and size. As shown in the figure, the top three circuit layers 11 of the organic circuit board 1b are shown. The surface of the contact pad 2b and the surface of the insulating layer 12 are in the same layer, and an organic insulating protective layer 3b is formed and patterned with a lion. The vertical circuit line 13 is completed by a so-called stacked via (stacked via) technology. The solder bump 91) is formed on the contact pad "as shown in Fig. 5-6. In addition, the invention has the following advantages in forming electroplated solder on an organic circuit board: This :: Forms a solder :: organic protective layer on an organic circuit board, and can provide a power bump A: One (2) The present invention provides a method for forming a metal seed layer

板浸沒於化學溶液中,減少電路板❹不需使電路 綜上所述,本發明提供高製程 Q 成本亦非常低廉,量產性高 功效上均深富實施之進步性 目前市面上所未見之新發明 法中所規定之發明專利要件 =示出本發明之目的及 極具產業之利用價 因此,太欲no 丘馬 本發明誠已符合專利 中請’謹請貴 製程困難及良率損失等缺失,且本發Li以之 jms9 五發明說明(12) 審杳泰吕 —者f惠予審視,並賜准專利為禱。 板上之方半以所述僅為本發明形成電鍍銲錫於有機電路 圍,任^1之較佳實施例,並非用以限制本發明之實施範 改,可热習該項技藝者在不違背本發明之精神所做之修 :應屬於本發明之範圍,因此本發明之保護範圍當以 下列所述之申請專利範圍做為依據。The board is immersed in a chemical solution to reduce the circuit board. It is not necessary to make the circuit as described above. The invention provides a high process Q and the cost is very low. The mass production and the high efficiency are rich in implementation. Elements of the invention patent stipulated in the New Invention Law = show the purpose of the invention and the use price of the industry. Therefore, Yuma no Yuma, this invention has been in line with the patent, please 'respect your process difficulties and yield loss Etc. are missing, and the present invention uses jms9 five invention descriptions (12) Examines Tailu—the person will review it, and grant the patent as a prayer. The half of the board uses the above description to form the electroplated solder on the organic circuit only for the present invention. Any preferred embodiment of ^ 1 is not intended to limit the implementation of the present invention, and those skilled in the art will not violate it. The amendment made by the spirit of the present invention should belong to the scope of the present invention, so the protection scope of the present invention should be based on the scope of patent application described below.

第16頁 519859 圖式簡單說明 圖式之簡單說明: 圖一 A及圖一 B其係為習知應用金屬凸塊及預銲錫凸塊 之結構示意圖。 圖二A及圖二B其係為另一習知應用銲錫凸塊之結構示 意圖。 圖三A至三F其係為本發明第一較佳實施例於電路板上 進行電鍍銲錫之方法示意圖。 圖四A至四C其係為本發明第二較佳實施例於電路板上 進行電鍍銲錫之方法示意圖。 圖五A至五B其係為本發明第三較佳實施例於電路板上 進行電鍍銲錫之方法示意圖。 圖號說明: 1 0 0、2 0 0〜覆晶元件 1 (Π〜金屬凸塊 2 0 1〜録錫凸塊 1 0 2、2 0 2〜電極銲墊 103 、 203〜晶片 1 0 4〜預銲錫凸塊 105、 205〜銲墊 106、 206〜電路板 1 0 7、2 G 7〜銲錫接 108、208〜底膠 1、1 a、1 b〜有機電路板Page 16 519859 Brief description of the diagrams Brief explanation of the diagrams: Figures 1A and 1B are schematic diagrams of the conventional application of metal bumps and pre-solder bumps. Fig. 2A and Fig. 2B are schematic diagrams showing another conventional structure for applying solder bumps. Figures 3A to 3F are schematic diagrams of a method for plating solder on a circuit board according to the first preferred embodiment of the present invention. Figures 4A to 4C are schematic diagrams of a method for electroplating solder on a circuit board according to a second preferred embodiment of the present invention. Figures 5A to 5B are schematic diagrams of a method for plating solder on a circuit board according to a third preferred embodiment of the present invention. Description of drawing number: 1 0 0, 2 0 0 ~ flip chip device 1 (Π ~ metal bump 2 0 1 ~ tin recording bump 1 0 2, 2 0 2 ~ electrode pad 103, 203 ~ wafer 1 0 4 ~ Pre-soldering bumps 105, 205 to pads 106, 206 to circuit boards 1 0 7, 2 G 7 to solder joints 108, 208 to primers 1, 1 a, 1 b to organic circuit boards

第17頁 519859 圖式簡單說明 11〜電路層 1 2〜絕緣層 1 3〜電路線 2、 2a、2b〜接觸銲墊 3、 3a、3b〜有機絕緣保護層 4、 4a〜金屬晶種層 5、 5a〜電鍍阻層 6、 6a〜開口 7、 7 a〜阻障層Page 519859 Brief description of the drawings 11 ~ Circuit layer 1 2 ~ Insulation layer 1 3 ~ Circuit line 2, 2a, 2b ~ Contact pad 3, 3a, 3b ~ Organic insulation protection layer 4, 4a ~ Metal seed layer 5 5a ~ plating resist layer 6, 6a ~ opening 7, 7a ~ barrier layer

8、 8 a〜録錫材料 9、 9a、9b〜銲錫凸塊8, 8 a ~ tin recording material 9, 9a, 9b ~ solder bump

第18頁Page 18

Claims (1)

519859519859 電路板上之方法,其步驟包括Method on a circuit board, the steps include 一種形成電鍍銲錫於有機 有: (a)提供表面上具有雷敗 蕾#Γ 佈局之一有機電路板 電路板上其係設有至少—接觸銲墊; 該有機電路板上覆上—有機絕緣保護層; c案化該有機絕緣保護層,使得該有機絕緣保護層 於相對應該銲墊(pad )處形成一開口 · (d)藉由上述步驟(c)之表面形狀被覆上一金屬晶種 層; (e)形成一電鍍阻層(resist)覆在該金屬晶種層上 且裸露出所述該開口; (f )沿該開口表面形成一金屬阻障層; (g)利用電鑛方法填入一銲錫材料於該開口内; (h )移除所述之電鍍阻層以及電鍍阻層下之金屬晶種 層。 2 ·如申請專利範圍第1項所述之形成電鍍銲錫於有機電路 板上之方法,其中所述該金屬晶種層之材質係為銅、 錫、斜錫合金或錫/銅雙金屬層。 3 ·如申請專利範圍第1項所述之形成電鍍銲錫於有機電路 板上之方法,其中所述該金屬晶種層之厚度係在0 · 0 1 mm以下。 4 ·如申請專利範圍第1項所述之形成電鍍銲錫於有機電路 板上之方法,其中所述該金屬B曰種層其係包括有至少一 薄金屬層。An electroplated solder formed on an organic substrate includes: (a) an organic circuit board provided on the surface with a thunderbolt # Γ layout, which is provided with at least a contact pad; and the organic circuit board is covered with organic insulation protection. C. The organic insulating protective layer is formed, so that the organic insulating protective layer forms an opening at a corresponding pad. (D) A metal seed layer is covered with the surface shape of the step (c) above. (E) forming a plating resist layer overlying the metal seed layer and exposing the opening; (f) forming a metal barrier layer along the surface of the opening; (g) filling with a power ore method Insert a solder material into the opening; (h) remove the plating resist layer and the metal seed layer under the plating resist layer. 2. The method for forming electroplated solder on an organic circuit board according to item 1 of the scope of the patent application, wherein the material of the metal seed layer is copper, tin, oblique tin alloy or tin / copper bimetal layer. 3. The method for forming an electroplated solder on an organic circuit board according to item 1 of the scope of the patent application, wherein the thickness of the metal seed layer is below 0. 0 1 mm. 4. The method for forming electroplated solder on an organic circuit board according to item 1 of the scope of the patent application, wherein the metal B seed layer includes at least one thin metal layer. 第19頁 519859 六、申請專利範圍 5 ·,申明專利圍第丨項所述之形成電鍍鲜錫於有機電路 之方法’其中該步驟⑷其係以物理氣相沈積法 被覆上該金屬晶種層。 6· ^申明專則巳圍第^所述之形成電鑛鲜錫於有機電路 :ΐ t : f η其中該步驟(d )其係以化學氣相沈積法 被覆上该金屬晶種層。 7 ^ H利乾圍第1項所述之形成電鍍銲錫於有機電路 其中該步驟⑷其係以電鑛法被覆上該 ΙΙΪίΠ!1項所述之形成電鍍鮮錫於有機電路 板上之方法,其中該步驟(d)其係以無 (electr〇less plating )被覆上該金屬晶^ 9 ·如申請專利範圍第丨項所述之 ^ m 所述之該金屬阻障層可為由下列至少 -種金屬所疊合而成:金、鎳、鈦、銅、歹」至- 10·如申請專利範圍第i項所述之形成脱二士 板上之方法,其中所述之銲錫材料 ,職冤路 組成之合金:錯、錫、銀、鋼、叙了為由下列金屬所 銘、猛、銦、碲與Ϊ等。錄、辞、錄、Page 19, 519859 VI. Application for Patent Scope 5 · Affirming the method of forming electroplated fresh tin on organic circuits as described in item 丨 of the patent, 'wherein this step: it is covered with the metal seed layer by physical vapor deposition method . 6. ^ Declaration of the special rules for the formation of electric ore fresh tin in organic circuits described in ^: ^ t: f η wherein step (d) is a step of coating the metal seed layer with a chemical vapor deposition method. 7 ^ The method of forming electroplated solder on organic circuits as described in item 1 of Liganwei, wherein this step is a method of forming electroplated fresh tin on organic circuit boards as described in item ΙΙΪίΠ! Wherein, step (d) is to coat the metal crystal with electrless plating ^ 9 The metal barrier layer described in ^ m described in item 丨 of the patent application range may be at least- Superposition of various metals: gold, nickel, titanium, copper, hafnium "to-10 · The method for forming a solder plate as described in item i of the patent application scope, in which the solder material, Alloys composed of alloys: copper, tin, silver, steel, alloys, alloys, indium, tellurium, and thallium. Record, resign, record,
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418276B (en) * 2011-05-13 2013-12-01 Unimicron Technology Corp Method for making package substrate with wingless conductive bump

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418276B (en) * 2011-05-13 2013-12-01 Unimicron Technology Corp Method for making package substrate with wingless conductive bump

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