TWI697046B - 蝕刻方法 - Google Patents

蝕刻方法 Download PDF

Info

Publication number
TWI697046B
TWI697046B TW105119381A TW105119381A TWI697046B TW I697046 B TWI697046 B TW I697046B TW 105119381 A TW105119381 A TW 105119381A TW 105119381 A TW105119381 A TW 105119381A TW I697046 B TWI697046 B TW I697046B
Authority
TW
Taiwan
Prior art keywords
gas
plasma
processing
etched layer
mask
Prior art date
Application number
TW105119381A
Other languages
English (en)
Chinese (zh)
Other versions
TW201717276A (zh
Inventor
勝沼隆幸
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201717276A publication Critical patent/TW201717276A/zh
Application granted granted Critical
Publication of TWI697046B publication Critical patent/TWI697046B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
TW105119381A 2015-06-23 2016-06-21 蝕刻方法 TWI697046B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015125773A JP6529357B2 (ja) 2015-06-23 2015-06-23 エッチング方法
JP2015-125773 2015-06-23

Publications (2)

Publication Number Publication Date
TW201717276A TW201717276A (zh) 2017-05-16
TWI697046B true TWI697046B (zh) 2020-06-21

Family

ID=57602823

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105119381A TWI697046B (zh) 2015-06-23 2016-06-21 蝕刻方法

Country Status (4)

Country Link
US (3) US9899232B2 (OSRAM)
JP (1) JP6529357B2 (OSRAM)
KR (1) KR102482619B1 (OSRAM)
TW (1) TWI697046B (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7022651B2 (ja) 2018-05-28 2022-02-18 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
JP7198609B2 (ja) * 2018-08-21 2023-01-04 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP6921799B2 (ja) 2018-11-30 2021-08-18 東京エレクトロン株式会社 基板処理方法および基板処理システム
JP7174634B2 (ja) * 2019-01-18 2022-11-17 東京エレクトロン株式会社 膜をエッチングする方法
US10886136B2 (en) * 2019-01-31 2021-01-05 Tokyo Electron Limited Method for processing substrates
JP7190940B2 (ja) * 2019-03-01 2022-12-16 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7330046B2 (ja) * 2019-09-30 2023-08-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
JP7398915B2 (ja) 2019-10-01 2023-12-15 東京エレクトロン株式会社 基板処理方法、半導体デバイスの製造方法、及び、プラズマ処理装置
US20210195726A1 (en) * 2019-12-12 2021-06-24 James Andrew Leskosek Linear accelerator using a stacked array of cyclotrons
CN114121641A (zh) * 2020-08-28 2022-03-01 东京毅力科创株式会社 晶片处理方法和等离子体处理装置
US20220310626A1 (en) * 2021-03-29 2022-09-29 Changxin Memory Technologies, Inc. Method for fabricating semiconductor device
WO2023008025A1 (ja) * 2021-07-27 2023-02-02 東京エレクトロン株式会社 エッチング方法、半導体装置の製造方法、エッチングプログラムおよびプラズマ処理装置
KR20240000122U (ko) 2022-07-12 2024-01-19 주식회사 피앤피코리아 친환경벽지로 만든 다이어리커버

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090242516A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Plasma etching method and computer readable storage medium
US20120302067A1 (en) * 2007-12-03 2012-11-29 Micron Technology Inc. Methods of Etching Trenches into Silicon of a Semiconductor Substrate, Methods of Forming Trench Isolation in Silicon of a Semiconductor Substrate, and Methods of Forming a Plurality of Diodes
US20130105947A1 (en) * 2011-10-26 2013-05-02 Zeon Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
US20140120726A1 (en) * 2012-11-01 2014-05-01 Srinivas D. Nemani Method of patterning a low-k dielectric film

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04100229A (ja) * 1990-08-20 1992-04-02 Fujitsu Ltd 半導体装置の製造方法
JPH11195641A (ja) * 1998-01-05 1999-07-21 Matsushita Electric Ind Co Ltd プラズマ処理方法
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6569774B1 (en) * 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
JP4176365B2 (ja) * 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
US20040241995A1 (en) * 2003-03-27 2004-12-02 Matsushita Electric Industrial Co., Ltd. Etching apparatus and etching method
US7740737B2 (en) * 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US20060151116A1 (en) * 2005-01-12 2006-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focus rings, apparatus in chamber, contact hole and method of forming contact hole
JP4701776B2 (ja) 2005-03-25 2011-06-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP5530088B2 (ja) * 2008-10-20 2014-06-25 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP5466468B2 (ja) * 2009-10-05 2014-04-09 旭化成イーマテリアルズ株式会社 ドライエッチング方法
JP5860668B2 (ja) * 2011-10-28 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
SG2013083654A (en) * 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
JP2014107387A (ja) * 2012-11-27 2014-06-09 Tokyo Electron Ltd 載置台構造及びフォーカスリングを保持する方法
JP6059048B2 (ja) * 2013-03-11 2017-01-11 東京エレクトロン株式会社 プラズマエッチング方法
JP6140575B2 (ja) * 2013-08-26 2017-05-31 東京エレクトロン株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120302067A1 (en) * 2007-12-03 2012-11-29 Micron Technology Inc. Methods of Etching Trenches into Silicon of a Semiconductor Substrate, Methods of Forming Trench Isolation in Silicon of a Semiconductor Substrate, and Methods of Forming a Plurality of Diodes
US20090242516A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Plasma etching method and computer readable storage medium
US20130105947A1 (en) * 2011-10-26 2013-05-02 Zeon Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
US20140120726A1 (en) * 2012-11-01 2014-05-01 Srinivas D. Nemani Method of patterning a low-k dielectric film

Also Published As

Publication number Publication date
KR20170000340A (ko) 2017-01-02
TW201717276A (zh) 2017-05-16
KR102482619B1 (ko) 2022-12-28
JP6529357B2 (ja) 2019-06-12
US20180130670A1 (en) 2018-05-10
US20160379834A1 (en) 2016-12-29
JP2017011127A (ja) 2017-01-12
US20210134604A1 (en) 2021-05-06
US10916442B2 (en) 2021-02-09
US9899232B2 (en) 2018-02-20

Similar Documents

Publication Publication Date Title
TWI760555B (zh) 蝕刻方法
JP6529357B2 (ja) エッチング方法
JP5530088B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
US11205577B2 (en) Method of selectively etching silicon oxide film on substrate
TWI686863B (zh) 蝕刻有機膜之方法
TWI766866B (zh) 蝕刻方法
KR102513051B1 (ko) 에칭 방법
CN109196624B (zh) 蚀刻方法
TW202249078A (zh) 電漿處理裝置及電漿處理方法
TWI694531B (zh) 蝕刻方法
CN111463123A (zh) 蚀刻膜的方法
CN110391140A (zh) 蚀刻方法和等离子体处理装置
JP6504827B2 (ja) エッチング方法
CN105810579B (zh) 蚀刻方法
CN109075068B (zh) 蚀刻方法