JP7198609B2 - エッチング方法及びプラズマ処理装置 - Google Patents
エッチング方法及びプラズマ処理装置 Download PDFInfo
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Description
Claims (8)
- プラズマ処理装置を用いて実行されるエッチング方法であって、該エッチング方法は、該プラズマ処理装置のチャンバ内に基板が配置された状態で実行され、
前記基板上にフルオロカーボンを含む堆積物を形成するために、前記チャンバ内でフルオロカーボンガスを含む処理ガスのプラズマを生成する工程であり、前記基板は、シリコン含有材料から形成された第1領域及び金属含有材料から形成された第2領域を有する、該工程と、
前記基板に希ガスイオンを供給することにより前記基板上に形成された前記堆積物中のフルオロカーボンと前記第1領域の前記シリコン含有材料とを反応させて前記第1領域をエッチングするために、前記チャンバ内で希ガスのプラズマを生成する工程と、
を含み、
処理ガスのプラズマを生成する工程において、電磁石による前記チャンバ内の磁場の形成は行われず、
希ガスのプラズマを生成する工程では、前記電磁石により、前記基板の中心の上での水平成分よりも大きい水平成分を前記基板のエッジ側の上で有する磁場の分布が形成される、
エッチング方法。 - 前記シリコン含有材料は、SiO2、SiOC、又はSiOCHである、請求項1に記載のエッチング方法。
- 前記金属含有材料は、チタン、タングステン、ジルコニウム、アルミニウム、タンタル、コバルト、若しくはルテニウムのうち何れかの金属材料、又は該金属材料の酸化物、窒化物、若しくは炭化物である、請求項1又は2に記載のエッチング方法。
- 前記フルオロカーボンガスは、C4F8ガス及び/又はC4F6ガスを含む、請求項1~3の何れか一項に記載のエッチング方法。
- 処理ガスのプラズマを生成する前記工程と希ガスのプラズマを生成する前記工程とが交互に繰り返される、請求項1~4の何れか一項に記載のエッチング方法。
- チャンバと、
下部電極を有し、前記チャンバ内に設けられた基板支持台と、
前記チャンバ内にフルオロカーボンガスを含む処理ガス及び希ガスを供給するように構成されたガス供給部と、
前記チャンバ内のガスを励起させるために高周波電力を発生するように構成された高周波電源と、
前記チャンバの内部空間の中に磁場を形成するよう構成された電磁石と、
前記電磁石に電流を供給するように構成された駆動電源と、
前記ガス供給部、前記高周波電源、及び前記駆動電源を制御するように構成された制御部と、
を備え、
前記制御部は、
前記処理ガスから形成されるプラズマからのフルオロカーボンの堆積物を前記基板支持台上に載置された基板上に形成するために、前記電磁石による前記チャンバ内の磁場の形成を行わずに、前記チャンバ内に前記処理ガスを供給するよう前記ガス供給部を制御し、前記高周波電力を供給するよう前記高周波電源を制御する第1の制御を実行し、
その上に前記堆積物が形成された前記基板に希ガスイオンを供給するために、前記チャンバ内に前記希ガスを供給するよう前記ガス供給部を制御し、前記高周波電力を供給するよう前記高周波電源を制御し、前記電磁石により、前記基板の中心の上での水平成分よりも大きい水平成分を前記基板のエッジ側の上で有する磁場の分布を形成するよう前記駆動電源を制御する第2の制御を実行する、
よう構成されている、プラズマ処理装置。 - 前記フルオロカーボンガスは、C4F8ガス及び/又はC4F6ガスを含む、請求項6に記載のプラズマ処理装置。
- 前記制御部は、前記第1の制御と前記第2の制御を交互に繰り返して実行するように構成されている、請求項6又は7に記載のプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2018154914A JP7198609B2 (ja) | 2018-08-21 | 2018-08-21 | エッチング方法及びプラズマ処理装置 |
US16/979,257 US20210366718A1 (en) | 2018-08-21 | 2019-08-07 | Etching method and plasma processing apparatus |
CN201980017819.XA CN111819666A (zh) | 2018-08-21 | 2019-08-07 | 蚀刻方法和等离子体处理装置 |
PCT/JP2019/031227 WO2020039943A1 (ja) | 2018-08-21 | 2019-08-07 | エッチング方法及びプラズマ処理装置 |
KR1020207025975A KR20210035074A (ko) | 2018-08-21 | 2019-08-07 | 에칭 방법 및 플라즈마 처리 장치 |
TW108129424A TW202022944A (zh) | 2018-08-21 | 2019-08-19 | 蝕刻方法及電漿處理裝置 |
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Citations (7)
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JP2000082695A (ja) | 1998-05-14 | 2000-03-21 | Sony Corp | プラズマエッチング法及び半導体装置 |
JP2004303939A (ja) | 2003-03-31 | 2004-10-28 | Tokyo Electron Ltd | プラズマ処理方法及びプラズマ処理装置及び磁場発生装置 |
JP2014158005A (ja) | 2013-01-21 | 2014-08-28 | Tokyo Electron Ltd | 多層膜をエッチングする方法 |
JP2014192219A (ja) | 2013-03-26 | 2014-10-06 | Tokyo Electron Ltd | シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法 |
JP2015201552A (ja) | 2014-04-09 | 2015-11-12 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2017011127A (ja) | 2015-06-23 | 2017-01-12 | 東京エレクトロン株式会社 | エッチング方法 |
JP2019061849A (ja) | 2017-09-26 | 2019-04-18 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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JP3343818B2 (ja) * | 1991-08-23 | 2002-11-11 | 日本電信電話株式会社 | イオンエッチング方法および装置 |
JPH05267237A (ja) * | 1992-03-23 | 1993-10-15 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ・ダメージ低減法およびプラズマ処理装置 |
JP4167542B2 (ja) * | 2002-07-17 | 2008-10-15 | 積水化学工業株式会社 | プラズマエッチング用ガス供給装置並びにプラズマエッチングシステム及び方法 |
JP6396699B2 (ja) * | 2014-02-24 | 2018-09-26 | 東京エレクトロン株式会社 | エッチング方法 |
JP2016136606A (ja) | 2015-01-16 | 2016-07-28 | 東京エレクトロン株式会社 | エッチング方法 |
JP6836976B2 (ja) * | 2017-09-26 | 2021-03-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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- 2018-08-21 JP JP2018154914A patent/JP7198609B2/ja active Active
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- 2019-08-07 KR KR1020207025975A patent/KR20210035074A/ko active Search and Examination
- 2019-08-07 US US16/979,257 patent/US20210366718A1/en active Pending
- 2019-08-07 CN CN201980017819.XA patent/CN111819666A/zh active Pending
- 2019-08-07 WO PCT/JP2019/031227 patent/WO2020039943A1/ja active Application Filing
- 2019-08-19 TW TW108129424A patent/TW202022944A/zh unknown
Patent Citations (7)
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JP2000082695A (ja) | 1998-05-14 | 2000-03-21 | Sony Corp | プラズマエッチング法及び半導体装置 |
JP2004303939A (ja) | 2003-03-31 | 2004-10-28 | Tokyo Electron Ltd | プラズマ処理方法及びプラズマ処理装置及び磁場発生装置 |
JP2014158005A (ja) | 2013-01-21 | 2014-08-28 | Tokyo Electron Ltd | 多層膜をエッチングする方法 |
JP2014192219A (ja) | 2013-03-26 | 2014-10-06 | Tokyo Electron Ltd | シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法 |
JP2015201552A (ja) | 2014-04-09 | 2015-11-12 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2017011127A (ja) | 2015-06-23 | 2017-01-12 | 東京エレクトロン株式会社 | エッチング方法 |
JP2019061849A (ja) | 2017-09-26 | 2019-04-18 | 東京エレクトロン株式会社 | プラズマ処理方法 |
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KR20210035074A (ko) | 2021-03-31 |
TW202022944A (zh) | 2020-06-16 |
JP2020031112A (ja) | 2020-02-27 |
CN111819666A (zh) | 2020-10-23 |
US20210366718A1 (en) | 2021-11-25 |
WO2020039943A1 (ja) | 2020-02-27 |
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