TWI691805B - Component manufacturing method - Google Patents
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- TWI691805B TWI691805B TW107144809A TW107144809A TWI691805B TW I691805 B TWI691805 B TW I691805B TW 107144809 A TW107144809 A TW 107144809A TW 107144809 A TW107144809 A TW 107144809A TW I691805 B TWI691805 B TW I691805B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/22—Telecentric objectives or lens systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/008—Systems specially adapted to form image relays or chained systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0804—Catadioptric systems using two curved mirrors
- G02B17/0812—Catadioptric systems using two curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
基板處理裝置(1011),具備:第1支承構件(1021),以在照明區域(IR)與投影區域(PA)中之一方區域中沿著以既定曲率彎曲成圓筒面狀之第1面(p1001)之方式支承第1物體(M)與第2物體(P)中之一方;以及第2支承構件(1022),以在照明區域與投影區域中之另一方區域中既定第2面(p1002)之方式支承第1物體與第2物體中之另一方。投影光學系(PL)具備偏向構件,該偏向構件係以從照明區域至投影區域之成像光束之主光線中第1面與投影光學系間之主光線朝向第1面之徑方向中與第2面為非垂直之徑方向之方式使成像光束傳播。 The substrate processing apparatus (1011) includes: a first support member (1021) to follow a first surface curved into a cylindrical shape with a predetermined curvature in one of the illumination area (IR) and the projection area (PA) (p1001) to support one of the first object (M) and the second object (P); and the second support member (1022) to set the second surface in the other of the illumination area and the projection area ( p1002) to support the other of the first object and the second object. The projection optical system (PL) includes a deflecting member that directs the principal ray between the first surface of the imaging beam from the illumination area to the projection area and the principal ray between the projection optical system toward the radial direction of the first surface and the second surface The imaging beam propagates in a way that the surface is not perpendicular to the radial direction.
Description
本發明係關於基板處理裝置、元件製造系統、以及元件製造方法。 The present invention relates to a substrate processing apparatus, a device manufacturing system, and a device manufacturing method.
本申請案根據2011年12月20日申請之日本特願2011-278290號及2012年2月7日申請之日本特願2012-024058號主張優先權,將其內容援用於此。 This application claims priority based on Japanese Patent Application No. 2011-278290 filed on December 20, 2011 and Japanese Patent Application No. 2012-024058 filed on February 7, 2012, and the contents are used here.
曝光裝置等基板處理裝置,例如下述之專利文獻1所記載,利用於各種元件之製造。基板處理裝置,能將配置於照明區域之光罩M上所形成之圖案之像投影於配置在投影區域之基板等。用於基板處理裝置之光罩M有平面狀者、圓筒狀者。 Substrate processing apparatuses such as exposure apparatuses, such as described in
又,作為製造元件之手法之一,已知有例如下述之專利文獻2所記載之捲對捲(roll to roll)方式。捲對捲方式,係一邊從送出用捲筒往回收用捲筒搬送膜等基板,一邊在搬送路徑上對基板進行各種處理之方式。基板有時會例如在搬送滾筒之間等以實質上平面之狀態被施以處理。又,基板亦有例如在滾筒表面上等以彎曲之狀態被施以處理之情形。 In addition, as one of the methods of manufacturing the element, for example, a roll-to-roll method described in
[專利文獻1]日本特開2007-299918號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2007-299918
[專利文獻2]國際公開第2008/129819號 [Patent Document 2] International Publication No. 2008/129819
如上述之基板處理裝置(曝光裝置),在例如光罩上之照明區域與基板上之投影區域之一方或雙方以既定曲率彎曲之情形,若考量用於曝光之投影光學系之成像性能,則特別是會在成像光束之主光線之設定上產生限制。例如,試假定將形成於半徑R之圓筒狀旋轉光罩之外周圓筒面之光罩圖案藉由投影光學系成像投影於捲繞在半徑R之圓筒旋轉捲筒(滾筒)之基板(膜、片、網等)表面之情形。此情形下,一般而言,只要設置從光罩圖案(圓筒面狀)至基板表面(圓筒面狀)之成像光束之主光線會形成將圓筒狀旋轉光罩之旋轉中心軸與圓筒旋轉捲筒之旋轉中心軸直線連結之光路之投影光學系即可。 As in the substrate processing apparatus (exposure apparatus) described above, for example, when one or both of the illumination area on the reticle and the projection area on the substrate are bent at a predetermined curvature, if the imaging performance of the projection optics used for exposure is considered, then In particular, there will be restrictions on the setting of the chief ray of the imaging beam. For example, suppose that the mask pattern formed on the outer peripheral cylindrical surface of the cylindrical rotating mask of radius R is imaged and projected onto the substrate of the cylindrical rotating reel (drum) wound by the radius R through the projection optical system ( Film, sheet, net, etc.) on the surface. In this case, in general, as long as the chief ray of the imaging beam from the reticle pattern (cylindrical surface) to the substrate surface (cylindrical surface) is formed, the rotation center axis and circle of the cylindrical rotating reticle will form The projection optical system of the optical path in which the central axis of rotation of the reel rotating reel is linearly connected.
然而,當在圓筒狀旋轉光罩之旋轉軸方向,光罩圖案之尺寸較大之情形,有時需將此種投影光學系於旋轉軸之方向設置複數個而多數化。此種多數化之情形,即使將複數個投影光學系於旋轉軸之方向緊密地排成一列,各投影光學系之投影視野(投影區域)彼此必定會分離鏡筒等金屬物之厚度,如此已無法將大光罩圖案忠實地曝光。 However, when the size of the mask pattern is relatively large in the direction of the rotation axis of the cylindrical rotating mask, it is sometimes necessary to install a plurality of such projection optics in the direction of the rotation axis to multiply. In such a majority situation, even if a plurality of projection optics are closely aligned in the direction of the rotation axis, the projection field of view (projection area) of each projection optics must be separated from each other by the thickness of the metal object such as the lens barrel. The large mask pattern cannot be faithfully exposed.
又,如上述之基板處理裝置在例如裝置之構成複雜時,則有可能有裝置成本提高、裝置尺寸變大型之情形。其結果,有可能使元件之製造成本提高。 In addition, if the above-mentioned substrate processing apparatus has a complicated configuration, for example, there is a possibility that the apparatus cost increases and the apparatus size becomes large. As a result, it is possible to increase the manufacturing cost of the device.
例如,當必須施以精密圖案化時,作為基板處理裝置,係使用照明描繪有電子元件或顯示元件之圖案之光罩、並將來自光罩之圖案之光投影曝光於形成有感光層(光阻等)之基板上之曝光裝置。在藉由捲對捲方式將光罩之圖案反覆曝光於連續搬送之可撓性長條基板(膜、片、網等)之情形,若亦使用以長條基板之搬送方向作為掃描方向、採用圓筒狀旋轉光罩作為光罩之掃描型曝光裝置,則可期待生產性跳躍性地提高。 For example, when precise patterning is necessary, as a substrate processing device, a photomask in which patterns of electronic components or display elements are drawn is illuminated, and light from the pattern of the photomask is projected and exposed to the photosensitive layer (light Exposure, etc.) on the substrate. In the case where the pattern of the photomask is repeatedly exposed to the continuously transported flexible long substrate (film, sheet, net, etc.) by roll-to-roll method, if the transport direction of the long substrate is also used as the scanning direction, use As a scanning exposure device for a reticle with a cylindrical rotating mask, the productivity can be expected to improve dramatically.
此種旋轉光罩,有於玻璃等透明圓筒體外周面以遮光層形成有圖案之透射方式與於金屬性圓筒體(亦可為圓柱體)之外周面以反射部與吸收部形 成有圖案之反射方式。透射型之圓筒光罩,必須於該圓筒光罩內部組裝用以照射朝向外周面之圖案之照明光之照明光學系(反射鏡、透鏡等光學構件),難以將旋轉軸通過圓筒光罩之內部中心,而亦有圓筒光罩之保持構造或旋轉驅動系之構成變得複雜之情形。 Such a rotating reticle has a transmission method in which a pattern is formed on the outer peripheral surface of a transparent cylindrical body such as glass with a light-shielding layer, and a reflecting portion and an absorbing portion are formed on the outer peripheral surface of a metallic cylindrical body (which may also be a cylinder) Pattern reflection method. For transmission type cylindrical masks, it is necessary to assemble an illumination optical system (reflector, lens, and other optical members) for illuminating the pattern toward the outer peripheral surface inside the cylindrical mask, and it is difficult to pass the rotation axis through the cylindrical light In the inner center of the mask, there are also cases where the holding structure of the cylindrical mask or the structure of the rotation drive system becomes complicated.
另一方面,反射型之圓筒光罩之情形,由於能使用金屬製之圓筒體(或圓柱體),因此雖能廉價地作成光罩,但必須於圓筒光罩之外周空間設置照射曝光用之照明光之照明光學系與將來自形成於外周面之圖案之反射光往基板投影之投影光學系,而有為了滿足被要求之解像力或轉印忠實度等之曝光裝置側之構成變得複雜之情形。 On the other hand, in the case of a reflective cylindrical mask, a cylindrical body (or cylinder) made of metal can be used, so although the mask can be made inexpensively, it is necessary to provide irradiation in the outer peripheral space of the cylindrical mask The illumination optics of the illumination light for exposure and the projection optics that project the reflected light from the pattern formed on the outer peripheral surface onto the substrate, and there are changes in the configuration of the exposure device side in order to satisfy the required resolution, transfer fidelity, etc. Complicated situation.
本發明之態樣,其目的在於提供一種基板處理裝置,搭載有即使光罩或基板(膜、片、網等可撓性基板)之一方或雙方配置成圓筒面狀亦能將較大光罩圖案忠實地曝光所使用的投影光學系。其他目的,為提供能將較大光罩圖案忠實地曝光之元件製造系統及元件製造方法。 An aspect of the present invention aims to provide a substrate processing apparatus equipped with a large light source even if one or both of a photomask and a substrate (a flexible substrate such as a film, sheet, net, etc.) are arranged in a cylindrical surface The mask pattern faithfully exposes the projection optical system used. Another purpose is to provide a device manufacturing system and a device manufacturing method that can faithfully expose larger mask patterns.
又,其他目的為提供能將裝置之構成簡化之基板處理裝置。又,其他目的為能提供能減低製造成本之元件製造系統及元件製造方法。 In addition, another object is to provide a substrate processing apparatus that can simplify the structure of the apparatus. In addition, another object is to provide a device manufacturing system and a device manufacturing method that can reduce manufacturing costs.
依據本發明之一態樣,提供一種基板處理裝置,具備:投影光學系,係將來自第1物體(光罩)上之照明區域之光束投射於第2物體(基板)上之投影區域;第1支承構件,以在照明區域與投影區域中之一方區域中沿著以既定曲率彎曲成圓筒狀之第1面之方式支承第1物體與第2物體中之一方;以及第2支承構件,以在照明區域與投影區域中之另一方區域中沿著既定第2面之方式支承第1物體與第2物體中之另一方;投影光學系具備偏向構件,該偏向構件係以從照明區域至投影區域之成像光束之主光線中第1面與投影光學系間之主光線朝向第1面之徑方向中與第2面為非垂直之徑方向之方式使成像光束傳播。 According to one aspect of the present invention, there is provided a substrate processing apparatus comprising: a projection optical system which projects a light beam from an illumination area on a first object (mask) on a projection area on a second object (substrate); 1 a support member that supports one of the first object and the second object along a first surface curved into a cylindrical shape with a predetermined curvature in one of the illumination area and the projection area; and the second support member, The other of the first object and the second object is supported along the predetermined second surface in the other of the illumination area and the projection area; the projection optics is provided with a deflection member that extends from the illumination area to The chief ray between the first surface of the imaging beam of the projection area and the projection optical system causes the imaging beam to propagate in a non-perpendicular radial direction in the radial direction of the first surface and the second surface.
依據本發明其他態樣,提供一種元件製造系統,具備上述態樣之基板處理裝置。 According to another aspect of the present invention, there is provided a device manufacturing system including the substrate processing apparatus of the above aspect.
依據本發明其他態樣,提供一種元件製造方法,包含:藉由上述態樣之基板處理裝置使第2物體曝光;以及藉由處理曝光後之第2物體來形成第1物體之圖案。 According to another aspect of the present invention, there is provided a device manufacturing method including: exposing a second object by the substrate processing apparatus of the above aspect; and forming a pattern of the first object by processing the exposed second object.
依據本發明其他態樣,提供一種基板處理裝置,係將反射性之光罩圖案之像投影曝光於感應基板上,其具備:光罩保持構件,保持光罩圖案;投影光學系,將從設定於光罩圖案上一部分之照明區域產生之反射光束往感應基板投射,藉此將光罩圖案一部分之像成像於感應基板;光學構件,包含:為了對照明區域進行落斜照明而配置於投影光學系之光路內、使往照明區域之照明光與從照明區域產生之反射光束中之一方通過之部分與使另一方反射之部分;以及照明光學系,生成作為照明光之源之光源像,經由投影光學系之一部分光路與光學構件使來自光源像之照明光往照明區域,且將與光源像在光學上共軛之共軛面形成於光學構件之反射部分或通過部分之位置或近旁。 According to other aspects of the present invention, there is provided a substrate processing apparatus that projects and exposes an image of a reflective mask pattern onto a sensing substrate, and includes: a mask holding member to hold the mask pattern; a projection optics system will set from A reflected light beam generated in a part of the illumination area on the mask pattern is projected onto the sensing substrate, thereby imaging a part of the image of the mask pattern on the sensing substrate; optical components, including: arranged in projection optics for oblique illumination of the illumination area In the optical path of the system, the part passing one of the illumination light to the illumination area and the reflected light beam generated from the illumination area and the part reflecting the other; and the illumination optical system, which generates a light source image as the source of the illumination light, A part of the projection optical system has a part of the optical path and the optical member that directs the illuminating light from the light source image to the illumination area, and a conjugate surface optically conjugated with the light source image is formed at or near the reflection part or the passing part of the optical member.
依據本發明其他態樣,提供一種基板處理裝置,係將反射性之光罩圖案之像投影曝光於感應基板上,其具備:光罩保持構件,保持光罩圖案;投影光學系,將從設定於光罩圖案上一部分之照明區域產生之反射光束往感應基板投射,藉此將光罩圖案一部分之像成像於感應基板;光學構件,包含:為了對照明區域進行落斜照明而配置於投影光學系之光路內、使往照明區域之照明光與從照明區域產生之反射光束中之一方通過之部分與使另一方反射之部分;以及照明光學系,將作為照明光之源之複數個光源像規則地或亂數地形成於光學構件之反射部分或通過部分之位置或其近旁。 According to other aspects of the present invention, there is provided a substrate processing apparatus that projects and exposes an image of a reflective mask pattern onto a sensing substrate, and includes: a mask holding member to hold the mask pattern; a projection optics system will set from A reflected light beam generated in a part of the illumination area on the mask pattern is projected onto the sensing substrate, thereby imaging a part of the image of the mask pattern on the sensing substrate; optical components, including: arranged in projection optics for oblique illumination of the illumination area In the optical path of the system, the part that passes one of the illumination light to the illumination area and the reflected light beam generated from the illumination area and the part that reflects the other; and the illumination optical system, which will be a plurality of light source images as the source of the illumination light It is regularly or randomly formed at or near the reflection part or passing part of the optical member.
依據本發明其他態樣,提供一種元件製造系統,具備上述態樣之基板處理裝置。 According to another aspect of the present invention, there is provided a device manufacturing system including the substrate processing apparatus of the above aspect.
依據本發明其他態樣,提供一種元件製造方法,包含:藉由上述態樣之基板處理裝置使物體曝光;以及使曝光後之物體顯影。 According to another aspect of the present invention, a device manufacturing method is provided, which includes: exposing an object with the substrate processing apparatus of the above aspect; and developing the exposed object.
依據本發明其他態樣,提供一種元件製造方法,係將可撓性片狀基板連續地於長邊方向移送、同時於該片狀基板上形成元件用之圖案,其包含:使沿從第1中心線起為一定半徑之圓筒面形成有與元件之圖案對應之透射型或反射型之光罩圖案之圓筒光罩繞第1中心線旋轉;藉由具有從與第1中心線平行之第2中心線起為一定半徑之圓筒狀外周面之圓筒體,使片狀基板一部分彎曲並支承、同時將片狀基板移送於長條方向;藉由一組投影光學系將光罩圖案之投影像曝光於片狀基板,該一組投影光學系構成為相對包含第1中心線與第2中心線之中心面配置成大致對稱,且在以圓筒光罩之光罩圖案作為物面、將以圓筒體支承之片狀基板之表面作為像面時從物面往像面之成像光束之主光線中通過物面之主光線之延長線朝向第1中心線、通過像面之主光線之延長線朝向第2中心線。 According to another aspect of the present invention, there is provided a device manufacturing method that continuously transfers a flexible sheet substrate in a long-side direction while forming a pattern for an element on the sheet substrate, which includes: The center line is a cylindrical surface of a certain radius with a transmission or reflection type mask pattern corresponding to the pattern of the element. The cylindrical mask rotates around the first center line; The second center line is a cylindrical body with a cylindrical outer peripheral surface of a certain radius, which bends and supports a part of the sheet substrate while transferring the sheet substrate in the longitudinal direction; the mask pattern is set by a set of projection optics The projected image is exposed to the sheet substrate. The set of projection optics is configured to be approximately symmetrical with respect to the center plane including the first center line and the second center line, and the mask pattern of the cylindrical mask is used as the object plane. When the surface of the sheet substrate supported by the cylinder is used as the image plane, the extension line of the chief ray passing through the object plane from the main ray of the imaging beam from the object plane to the image plane faces the first center line and passes through the main plane of the image plane. The extension of the light is toward the second centerline.
根據本發明之態樣,即使光罩與基板之一方或雙方為圓筒面狀之情形,亦能藉由具備小型之投影光學系之基板處理裝置(曝光裝置)忠實地曝光較大光罩圖案。又,根據本發明之態樣,能提供能忠實地曝光較大光罩圖案之元件製造系統及元件製造方法。 According to the aspect of the present invention, even if one or both of the mask and the substrate are cylindrical, it is possible to faithfully expose a larger mask pattern by a substrate processing device (exposure device) equipped with a small projection optical system . In addition, according to the aspect of the present invention, it is possible to provide a device manufacturing system and a device manufacturing method that can faithfully expose a large mask pattern.
又,根據本發明之態樣,能提供能將裝置之構成簡化之基板處理裝置。又,根據本發明之態樣,能提供能減低製造成本之元件製造系統及元件製造方法。 Furthermore, according to the aspect of the present invention, it is possible to provide a substrate processing apparatus which can simplify the structure of the apparatus. Furthermore, according to the aspect of the present invention, it is possible to provide a device manufacturing system and a device manufacturing method that can reduce manufacturing costs.
1001‧‧‧元件製造系統 1001‧‧‧Component manufacturing system
1009‧‧‧搬送裝置 1009‧‧‧Conveying device
1011‧‧‧基板處理裝置 1011‧‧‧Substrate processing device
1021‧‧‧第1捲筒構件 1021‧‧‧The first reel member
1022‧‧‧第2捲筒構件 1022‧‧‧The second reel member
1050‧‧‧第1偏向構件 1050‧‧‧The first deflection member
1057‧‧‧第2偏向構件 1057‧‧‧The second deflection member
1078‧‧‧光罩載台 1078‧‧‧mask stage
1120‧‧‧第3偏向構件 1120‧‧‧The third deflection member
1121‧‧‧第4偏向構件 1121‧‧‧4th deflection member
1132‧‧‧第7偏向構件 1132 ‧‧‧ 7th deflection member
1133‧‧‧第8偏向構件 1133‧‧‧Eighth deflection member
1136‧‧‧第9偏向構件 1136‧‧‧The 9th deflection member
1137‧‧‧第10偏向構件 1137‧‧‧10th deflection member
1140‧‧‧第11偏向構件 1140‧‧‧Eleventh deflection member
1143‧‧‧第12偏向構件 1143‧‧‧12th deflection member
1151‧‧‧第13偏向構件 1151‧‧‧13th deflection member
1152‧‧‧第14偏向構件 1152‧‧‧The 14th deflection member
AX1001‧‧‧第1中心軸 AX1001‧‧‧1st central axis
AX1002‧‧‧第2中心軸 AX1002‧‧‧2nd central axis
D1001‧‧‧第1徑方向 D1001‧‧‧ First diameter direction
D1002‧‧‧第2徑方向 D1002‧‧‧The second diameter direction
D1003‧‧‧第1法線方向 D1003‧‧‧First normal direction
D1004‧‧‧第2法線方向 D1004 ‧‧‧ 2nd normal direction
DFx‧‧‧距離 DFx‧‧‧Distance
DMx‧‧‧周長 DMx‧‧‧Perimeter
IR‧‧‧照明區域 IR‧‧‧Illuminated area
M‧‧‧光罩 M‧‧‧mask
P‧‧‧基板 P‧‧‧Substrate
PA‧‧‧投影區域 PA‧‧‧Projection area
PL‧‧‧投影光學系 PL‧‧‧Projection optics
PL1001~PL1006‧‧‧投影模組 PL1001~PL1006‧‧‧Projection module
p1001‧‧‧第1面 p1001‧‧‧The first side
p1002‧‧‧第2面 p1002‧‧‧Second side
p1003‧‧‧中心面 p1003‧‧‧Center
p1007‧‧‧中間像面 p1007‧‧‧Intermediate image plane
2001‧‧‧元件製造系統 2001‧‧‧Component Manufacturing System
2005‧‧‧上位控制裝置 2005‧‧‧Higher control device
2013‧‧‧控制裝置 2013‧‧‧Control device
2014‧‧‧第1光學系 2014‧‧‧First Optical Department
2015‧‧‧第2光學系 2015‧‧‧ 2nd Department of Optics
2020‧‧‧旋轉捲筒 2020‧‧‧Reel
2030‧‧‧旋轉捲筒 2030‧‧‧Rotating reel
2040‧‧‧凹面鏡 2040‧‧‧Concave mirror
2094‧‧‧桿透鏡 2094‧‧‧lens lens
U3‧‧‧處理裝置(基板處理裝置、曝光裝置) U3‧‧‧Processing device (substrate processing device, exposure device)
圖1係顯示第1實施形態之元件製造系統構成之圖。 FIG. 1 is a diagram showing the structure of a component manufacturing system according to the first embodiment.
圖2係顯示第1實施形態之基板處理裝置(曝光裝置)之整體構成之圖。 2 is a diagram showing the overall configuration of a substrate processing apparatus (exposure apparatus) according to the first embodiment.
圖3係顯示圖2所示之曝光裝置之光罩保持裝置之構成之圖。 FIG. 3 is a diagram showing the structure of a mask holding device of the exposure device shown in FIG. 2.
圖4係顯示圖2所示之曝光裝置之第1捲筒構件及照明光學系之構成之圖。 4 is a diagram showing the configuration of the first reel member and the illumination optics of the exposure apparatus shown in FIG. 2.
圖5係顯示圖2所示之曝光裝置之照明區域及投影區域之配置之圖。 5 is a diagram showing the arrangement of the illumination area and the projection area of the exposure device shown in FIG. 2.
圖6係顯示適用於圖2所示之曝光裝置之投影光學系之構成之圖。 6 is a diagram showing a configuration of a projection optical system suitable for the exposure device shown in FIG. 2.
圖7係顯示第2實施形態之曝光裝置之整體構成之圖。 7 is a diagram showing the overall configuration of an exposure apparatus according to a second embodiment.
圖8係顯示第3實施形態之曝光裝置之整體構成之圖。 8 is a diagram showing the overall configuration of an exposure apparatus according to a third embodiment.
圖9係說明圖8所示之曝光裝置之照明區域之投影區域之位置關係條件之圖。 9 is a diagram illustrating the positional relationship conditions of the projection area of the illumination area of the exposure apparatus shown in FIG. 8.
圖10係顯示以圖9說明之條件隨圓筒光罩半徑變化之圖表。 FIG. 10 is a graph showing the variation of the conditions of FIG. 9 with the radius of the cylindrical mask.
圖11係顯示第4實施形態之曝光裝置之整體構成之圖。 Fig. 11 is a diagram showing the overall configuration of an exposure apparatus according to a fourth embodiment.
圖12係顯示第5實施形態之曝光裝置之落斜照明方式構成之圖。 FIG. 12 is a diagram showing the configuration of the oblique illumination method of the exposure apparatus of the fifth embodiment.
圖13係顯示第6實施形態之投影光學系之構成之圖。 Fig. 13 is a diagram showing the configuration of a projection optical system according to a sixth embodiment.
圖14係顯示將圖13所示之投影光學系複數化後之情形之構成之圖。 FIG. 14 is a diagram showing a configuration in which the projection optical system shown in FIG. 13 is pluralized.
圖15係顯示從其他方向觀看圖14所示之複數化後之投影光學系之圖。 15 is a diagram showing the projection optical system shown in FIG. 14 after being pluralized from other directions.
圖16係顯示第7實施形態之投影光學系之構成之圖。 16 is a diagram showing the configuration of a projection optical system according to a seventh embodiment.
圖17係顯示第8實施形態之投影光學系之構成之圖。 Fig. 17 is a diagram showing the configuration of a projection optical system according to an eighth embodiment.
圖18係顯示第9實施形態之投影光學系之構成之圖。 Fig. 18 is a diagram showing the configuration of a projection optical system according to a ninth embodiment.
圖19係顯示第10實施形態之投影光學系之構成之圖。 Fig. 19 is a diagram showing the structure of a projection optical system according to a tenth embodiment.
圖20係顯示第11實施形態之元件製造系統之構成之圖。 FIG. 20 is a diagram showing the configuration of the component manufacturing system of the eleventh embodiment.
圖21係顯示第11實施形態之基板處理裝置(曝光裝置)之構成之圖。 21 is a diagram showing the structure of a substrate processing apparatus (exposure apparatus) according to an eleventh embodiment.
圖22係顯示第11實施形態之光學構件之構成之圖。 Fig. 22 is a diagram showing the configuration of an optical member in the eleventh embodiment.
圖23係顯示從照明區域至投影區域之光路之示意圖。 23 is a schematic diagram showing the light path from the illuminated area to the projection area.
圖24係顯示第11實施形態之光源裝置之構成例之圖。 24 is a diagram showing a configuration example of a light source device according to an eleventh embodiment.
圖25係顯示第11實施形態之複眼透鏡陣列之構成例之圖。 FIG. 25 is a diagram showing a configuration example of a fly-eye lens array of the eleventh embodiment.
圖26係顯示第11實施形態之照明光學系中之光闌之構成例之圖。 Fig. 26 is a diagram showing a configuration example of a diaphragm in the illumination optical system of the eleventh embodiment.
圖27係顯示第11實施形態之光學構件之構成例之圖。 Fig. 27 is a diagram showing a configuration example of an optical member according to an eleventh embodiment.
圖28係顯示第12實施形態之複眼透鏡陣列之構成例之圖。 FIG. 28 is a diagram showing a configuration example of a fly-eye lens array of the twelfth embodiment.
圖29係顯示第13實施形態之複眼透鏡陣列之構成例之圖。 FIG. 29 is a diagram showing a configuration example of a compound-eye lens array of a thirteenth embodiment.
圖30係顯示第14實施形態之複眼透鏡陣列之構成例之圖。 FIG. 30 is a diagram showing a configuration example of a fly-eye lens array of the fourteenth embodiment.
圖31係顯示第15實施形態之光源像形成部之構成例之圖。 Fig. 31 is a diagram showing a configuration example of a light source image forming unit in a fifteenth embodiment.
圖32A係顯示第16實施形態之照明光學系之構成例之圖。 32A is a diagram showing a configuration example of an illumination optical system according to a sixteenth embodiment.
圖32B係顯示第16實施形態之照明光學系之構成例之圖。 32B is a diagram showing a configuration example of the illumination optical system of the sixteenth embodiment.
圖33A係顯示第16實施形態之照明光學系各部之圖。 Fig. 33A is a diagram showing parts of the illumination optical system according to the sixteenth embodiment.
圖33B係顯示第16實施形態之照明光學系各部之圖。 Fig. 33B is a diagram showing each part of the illumination optical system according to the sixteenth embodiment.
圖33C係顯示第16實施形態之照明光學系各部之圖。 Fig. 33C is a diagram showing each part of the illumination optical system according to the sixteenth embodiment.
圖34係顯示第17實施形態之基板處理裝置(曝光裝置)之構成之圖。 34 is a diagram showing the structure of a substrate processing apparatus (exposure apparatus) according to a seventeenth embodiment.
圖35係顯示第17實施形態之照明區域及投影區域之配置之圖。 FIG. 35 is a diagram showing the arrangement of the illumination area and the projection area in the seventeenth embodiment.
圖36係顯示第17實施形態之曝光裝置之構成例之圖。 Fig. 36 is a diagram showing a configuration example of an exposure apparatus according to a seventeenth embodiment.
圖37係顯示第18實施形態之投影光學系之構成例之圖。 Fig. 37 is a diagram showing a configuration example of a projection optical system according to an eighteenth embodiment.
圖38係顯示第19實施形態之投影光學系之構成例之圖。 Fig. 38 is a diagram showing a configuration example of a projection optical system according to a nineteenth embodiment.
圖39係顯示本實施形態之元件製造方法之流程圖。 FIG. 39 is a flowchart showing the device manufacturing method of this embodiment.
圖1係顯示本實施形態之元件製造系統1001之構成的圖。圖1所示之元件製造系統1001,具備供應基板P之基板供應裝置1002、對藉由基板供應裝置1002供應之基板P執行既定處理之處理裝置1003、回收已藉由處理裝置1003被施以處理之基板P之基板回收裝置1004、以及控制元件製造系統1001之各部之上位控制裝置1005。 FIG. 1 is a diagram showing the configuration of a component manufacturing system 1001 of this embodiment. The component manufacturing system 1001 shown in FIG. 1 includes a
本實施形態中,基板P係如所謂可撓性基板等之具有可撓性(flexibility) 之(片)基板。本實施形態之元件製造系統1001,能藉由具有可撓性之基板P製造具有可撓性之元件。基板P例如被選擇為具有在元件製造系統1001彎曲時不會破斷之程度之可撓性。 In the present embodiment, the substrate P is a flexible (sheet) substrate such as a so-called flexible substrate. In the device manufacturing system 1001 of this embodiment, a flexible device can be manufactured from the flexible substrate P. The substrate P is selected, for example, to have a degree of flexibility that does not break when the device manufacturing system 1001 is bent.
此外,在元件製造時之基板P之可撓性,例如可依基板P之材質、大小、厚度等來調整,且可依元件製造時之濕度、溫度等環境條件等來調整。又,基板P亦可係如所謂硬質基板等之不具有可撓性之基板。又,基板P亦可係將可撓性基板與硬質基板組合而成之複合基板。 In addition, the flexibility of the substrate P during the manufacture of the device can be adjusted according to the material, size, thickness, etc. of the substrate P, and can be adjusted according to the environmental conditions such as humidity and temperature during the manufacture of the device. In addition, the substrate P may be a substrate having no flexibility such as a so-called hard substrate. In addition, the substrate P may also be a composite substrate formed by combining a flexible substrate and a rigid substrate.
具有可撓性之基板P,可使用例如樹脂薄膜、不鏽鋼等金屬或合金所構成之箔(foil)。樹脂薄膜之材質例如包含用聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、聚乙烯醇樹脂中之一或二以上。 For the flexible substrate P, a foil made of a metal or alloy such as resin film or stainless steel can be used. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin , Polystyrene resin, polyvinyl alcohol resin one or more than two.
基板P例如熱膨脹係數等之特性被設定為可實質上忽視施加於基板P之各種處理步驟中所受之熱導致之變形量。基板P,例如能選定熱膨脹係數非顯著大者。熱膨脹係數,例如亦可藉由將無機填料混合於樹脂薄膜而設定成較與製程溫度等對應之臨限值小。無機填料,例如有氧化鈦、氧化鋅、氧化鋁、氧化矽等。此外,基板P可以是以浮式法等製造之厚度100μm程度之極薄玻璃單體、或於該極薄玻璃貼合上述樹脂薄膜及鋁箔的積層體。 The characteristics of the substrate P, such as the coefficient of thermal expansion, are set so as to substantially ignore the amount of deformation caused by the heat applied to the various processing steps applied to the substrate P. For the substrate P, for example, a non-significant thermal expansion coefficient can be selected. The thermal expansion coefficient can be set to be smaller than the threshold corresponding to the process temperature and the like by, for example, mixing an inorganic filler into the resin film. Examples of inorganic fillers include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide. In addition, the substrate P may be a very thin glass monomer having a thickness of about 100 μm manufactured by a float method or the like, or a laminate in which the above-mentioned resin film and aluminum foil are bonded to the very thin glass.
本實施形態中,基板P係所謂多面擷取用之基板。本實施形態之元件製造系統1001,係對基板P反覆執行用以製造一個元件之各種處理。被施以各種處理之基板P被分割(Dicing)成各元件,而成為複數個元件。基板P之尺寸,例如寬度方向(短邊方向)尺寸為1m~2m程度,長度方向(長邊方向)尺寸則為例如10m以上。 In this embodiment, the substrate P is a so-called multi-faceted substrate. The device manufacturing system 1001 of this embodiment repeatedly executes various processes for manufacturing a device on the substrate P. The substrate P that has been subjected to various processes is divided into elements, and becomes a plurality of elements. The size of the substrate P is, for example, approximately 1 m to 2 m in the width direction (short side direction), and 10 m or more in the longitudinal direction (long side direction).
此外,基板P之尺寸可視所製造之元件之尺寸等來適當設定。例如,基板P尺寸亦可係寬度方向尺寸為1m以下或2m以上,長邊方向尺寸亦可 為10m以下。又,當基板P係所謂多面擷取用之基板時,亦可係一片帶狀之基板,亦可係複數個基板連接而成之基板。又,元件製造系統1001亦可藉由依每一個元件獨立之基板來製造元件。此情形下,基板P亦可係相當於一個元件之尺寸之基板。 In addition, the size of the substrate P can be appropriately set according to the size of the manufactured device and the like. For example, the size of the substrate P may be 1 m or less or 2 m or more in the width direction, and 10 m or less in the longitudinal direction. In addition, when the substrate P is a substrate for so-called multi-face extraction, it may be a strip-shaped substrate or a substrate formed by connecting a plurality of substrates. In addition, the device manufacturing system 1001 can also manufacture a device by using a separate substrate for each device. In this case, the substrate P may also be a substrate equivalent to the size of one device.
本實施形態之基板供應裝置1002,藉由送出捲於供應用捲軸1006之基板P,將基板P供應至處理裝置1003。基板供應裝置1002包含例如捲繞基板P之軸部、使此軸部旋轉之旋轉驅動部等。本實施形態中,基板P被往其長邊方向搬送,送往處理裝置1003。亦即,本實施形態中,基板P之搬送方向與基板P之長邊方向實質上相同。 The
此外,基板供應裝置1002亦可包含將捲於供應用捲軸1006之基板P覆蓋之罩部等。又,基板供應裝置1002亦可包含例如夾持式之驅動滾筒等將基板P往其長邊方向依序送出之機構。 In addition, the
本實施形態之基板回收裝置1004,係藉由將通過處理裝置1003之基板P捲取於回收用捲軸1007來回收基板P。基板回收裝置1004例如與基板供應裝置1002同樣地包含捲繞基板P之軸部、使此軸部旋轉之旋轉驅動部、將捲於回收用捲軸1007之基板P覆蓋之罩部等。 The
又,被處理後之基板P被切斷裝置切斷,基板回收裝置1004亦可回收被切斷之基板。此情形下,基板回收裝置1004亦可係重疊切斷後之基板來回收之裝置。上述之切斷裝置亦可係處理裝置1003之一部分,亦可與處理裝置1003為不同之裝置,例如亦可係基板回收裝置1004之一部分。 In addition, the processed substrate P is cut by the cutting device, and the
處理裝置1003將從基板供應裝置1002供應之基板P往基板回收裝置1004搬送,且在搬送之過程中對基板P之被處理面進行處理。處理裝置1003具備對基板P之被處理面進行加工處理之加工處理裝置1010、以及包含以對應加工處理之條件移送基板P之搬送滾筒1008等之搬送裝置1009。 The
加工處理裝置1010包含一或二以上之裝置,其用以對基板P之被處理 面執行用以形成構成元件之要件之各種處理。本實施形態之元件製造系統1001中,執行各種處理之裝置沿基板P之搬送路徑適當地設置,能以所謂捲對捲方式生產可撓顯示器等元件。藉由捲對捲方式,能以良好效率生產元件。 The
本實施形態中,加工處理裝置1010之各種裝置包含成膜裝置、曝光裝置、塗布顯影裝置、以及蝕刻裝置。成膜裝置,係例如鍍金裝置、蒸鍍裝置、濺鍍裝置等。成膜裝置,係將導電膜、半導體膜、絕緣膜等功能膜形成於基板P。塗布顯影裝置係於藉由成膜裝置而形成有功能膜之基板P形成光阻膜等感光材。曝光裝置,藉由將與構成元件之膜圖案對應之圖案之像投影於形成有感光材之基板P,來對基板P施加曝光處理。塗布顯影裝置,係使曝光後之基板P顯影。蝕刻裝置,係將顯影後之基板P之感光材作為光罩M來蝕刻功能膜。以此方式,加工處理裝置1010將所欲圖案之功能膜形成於基板P。 In this embodiment, the various devices of the
此外,加工處理裝置1010亦可具備如壓印方式之成膜裝置、液滴吐出裝置等不藉由蝕刻而直接形成膜圖案之裝置。加工處理裝置1010之各種裝置中之至少一個亦可省略。 In addition, the
本實施形態中,上位控制裝置1005係控制基板供應裝置1002而使基板供應裝置1002執行將基板P往加工處理裝置1010供應之處理。上位控制裝置1005係控制加工處理裝置1010而使加工處理裝置1010執行對基板P之各種處理。上位控制裝置1005係控制基板回收裝置1004而使基板回收裝置1004執行將加工處理裝置1010已施加各種處理之基板P回收之處理。 In this embodiment, the higher-
其次,參照圖2、圖3、圖4說明本實施形態之基板處理裝置之構成。圖2係顯示本實施形態之基板處理裝置1011整體構成之圖。圖2所示之基板處理裝置1011係如上述之加工處理裝置1010之至少一部分。本實施形態中,基板處理裝置1011包含執行曝光處理之曝光裝置EX與搬送裝置1009 之至少一部分。 Next, the structure of the substrate processing apparatus of this embodiment will be described with reference to FIGS. 2, 3 and 4. FIG. 2 is a diagram showing the overall configuration of the
本實施形態之曝光裝置EX係所謂掃描曝光裝置,一邊同步驅動圓筒狀光罩(圓筒光罩)M之旋轉與可撓性基板P之移送,一邊將形成於光罩M之圖案之像透過投影倍率為等倍(×1)之投影光學系PL(PL1001~PL1006)投影於基板P。此外,圖2~圖4中,將正交座標系XYZ之Y軸設定為與圓筒狀之光罩M之旋轉中心線(第1中心線)AX1001平行,將X軸設定為掃描曝光之方向、以及在曝光位置之基板P之搬送方向。 The exposure apparatus EX of the present embodiment is a so-called scanning exposure apparatus, which simultaneously drives the rotation of the cylindrical mask (cylindrical mask) M and the transfer of the flexible substrate P, and simultaneously images the pattern formed on the mask M The projection optical system PL (PL1001 to PL1006) with a projection magnification of equal magnification (×1) is projected on the substrate P. In addition, in FIGS. 2 to 4, the Y axis of the orthogonal coordinate system XYZ is set to be parallel to the rotation center line (first center line) AX1001 of the cylindrical mask M, and the X axis is set to the direction of scanning exposure And the transport direction of the substrate P at the exposure position.
如圖2所示,曝光裝置EX具備光罩保持裝置1012、照明裝置1013、投影光學系PL、以及控制裝置1014。基板處理裝置1011係使保持於光罩保持裝置1012之光罩M旋轉移動,且藉由搬送裝置1009搬送基板P。照明裝置1013,係藉由照明光束EL1以均一之亮度照明光罩保持裝置1012所保持之光罩M之一部分(照明區域IR)。投影光學系PL,將光罩M上之照明區域IR之圖案之像投影於以搬送裝置1009搬送之基板P之一部分(投影區域PA)。伴隨光罩M之移動,配置於照明區域IR之光罩M上之部位亦變化,且伴隨基板P之移動,配置於投影區域PA之基板P上之部位亦變化,藉此將光罩M上之既定圖案(光罩圖案)之像投影於基板P。控制裝置1014控制曝光裝置EX之各部,使各部執行處理。又,本實施形態中,控制裝置1014控制搬送裝置1009之至少一部分。 As shown in FIG. 2, the exposure device EX includes a
此外,控制裝置1014亦可係元件製造系統1001之上位控制裝置1005之一部分或全部。又,控制裝置1014亦可係被上位控制裝置1005控制、與上位控制裝置1005為不同之裝置。控制裝置1014包含例如電腦系統。電腦系統包含例如CPU及各種記憶體或OS、週邊機器等硬體。基板處理裝置1011之各部之動作過程,係藉由以程式之形式儲存於電腦可讀取記錄媒體,並由電腦系統讀出此程式來加以執行,藉此進行各種處理。電腦系統在能連接於網際網路或網際網路系統之情形,亦包含網頁提供環境(或顯示 環境)。又,電腦可讀取記錄媒體包含軟碟、光磁碟、ROM、CD-ROM等可攜媒體、內藏於電腦系統之硬碟等記憶裝置。電腦可讀取記錄媒體,亦包含如透過網際網路等網路或電話線路等通訊線路發送程式時之通訊線在短時間動態保持程式者,亦包含如在此情形下之作為伺服器客戶端之電腦系統內部之揮發性記憶體,保持有一定時間程式者。又,程式亦可係用以實現基板處理裝置1011功能一部分者,亦可係能與已記錄於電腦系統之程式組合來實現基板處理裝置1011之功能者。上位控制裝置1005能與控制裝置1014同樣地利用電腦系統來實現。 In addition, the
其次,參照圖3、圖4詳細說明圖2之曝光裝置EX各部。圖3係顯示光罩保持裝置1012構成之圖,圖4係顯示第1捲筒構件1021及照明光學系IL之構成之圖。 Next, each part of the exposure apparatus EX of FIG. 2 will be described in detail with reference to FIGS. 3 and 4. FIG. 3 is a diagram showing the configuration of the
如圖3(圖2)所示,光罩保持裝置1012具備保持光罩M之第1構件(以下稱為第1捲筒構件1021)、支承第1捲筒構件1021之導引滾筒1023、驅動第1捲筒構件1021之驅動滾筒1024、檢測出第1捲筒構件1021之位置之第1檢測器1025、以及第1驅動部1026。 As shown in FIG. 3 (FIG. 2), the
如圖4(圖2或圖3)所示,第1捲筒構件1021形成配光罩M上之照明區域IR配置之第1面p1001。本實施形態中,第1面p1001包含使線段(母線)繞與此線段平行之軸(第1中心軸AX1001)旋轉之面(以下稱為圓筒面)。圓筒面例如係圓筒之外周面、圓柱之外周面等。第1捲筒構件1021例如係以玻璃或石英等構成,具有一定厚度之圓筒狀,其外周面(圓筒面)形成第1面p1001。亦即,本實施形態中,光罩M上之照明區域IR從旋轉中心線AX1001彎曲成具有一定半徑r1001(參照圖1)之圓筒面狀。第1捲筒構件1021中從第1捲筒構件1021徑方向觀看為與光罩M之圖案重疊之部分、例如圖3所示第1捲筒構件1021之Y軸方向之兩端側以外之中央部分對照明光束EL1001具有透光性。 As shown in FIG. 4 (FIG. 2 or FIG. 3), the
光罩M被製作成例如於平坦性佳之短條狀極薄玻璃板(例如厚度100~500μm)之一面以鉻等遮光層形成有圖案之透射型平面状片光罩,使其沿第1捲筒構件1021外周面彎曲,並在捲繞(貼附)於此外周面之狀態下被使用。光罩M,具有未形成有圖案之圖案非形成區域,在圖案非形成區域中安裝於第1捲筒構件1021。光罩M能對第1捲筒構件1021裝卸(釋放)。 The photomask M is made as a transmissive flat sheet photomask with a pattern of a light-shielding layer of chromium or the like formed on one surface of a short strip-shaped thin glass plate (for example, thickness 100-500 μm) with good flatness, along the first volume The outer circumferential surface of the
此外,亦可取代將光罩M以極薄玻璃板構成並將該光罩M捲繞於透明圓筒母材之第1捲筒構件1021之方式,於透明圓筒母材之第1捲筒構件1021之外周面直接描繪形成以鉻等遮光層所形成之光罩圖案而作成一體。此情形下,第1捲筒構件1021亦發揮光罩(第1物體)之支承構件之功能。 In addition, it is also possible to replace the method of forming the photomask M with an extremely thin glass plate and winding the photomask M around the
此外,第1捲筒構件1021亦可作成使薄板狀之光罩M彎曲而安裝於其內周面之構造。又,光罩M亦可形成有對應一個顯示元件之面板用圖案之整體或一部分,亦可形成有對應複數個顯示元件之面板用圖案。再者,於光罩M,亦可於繞第1中心軸AX1001之周方向反覆配置複數個面板用圖案,亦可將小型面板用圖案於與第1中心軸AX1001平行之方向反覆配置複數個。又,光罩M亦可包含第1顯示元件之面板用圖案及尺寸等與第1顯示元件不同之第2顯示元件之面板用圖案。又,於第1捲筒構件1021之外周面(或內周面),亦可設置在與第1中心軸AX1001平行之方向或周方向個別安裝複數個分離之薄板狀之光罩M之構造。 In addition, the
圖3所示之導引滾筒1023及驅動滾筒1024延伸於相對第1捲筒構件1021之第1中心軸AX1001為平行之Y軸方向。導引滾筒1023及驅動滾筒1024設置成能繞與第1中心軸AX1001平行之軸旋轉。導引滾筒1023及驅動滾筒1024,軸方向端部之外徑較其他部分之外形大,此端部外接於第1捲筒構件1021。如上述,導引滾筒1023及驅動滾筒1024設置成不接觸於第1捲筒構件1021所保持之光罩M。驅動滾筒1024藉由將從第1驅動部1026供應之力矩傳遞至第1捲筒構件1021,使第1捲筒構件1021繞第1中心軸 AX1001旋轉。 The
此外,光罩保持裝置1012雖具備一個導引滾筒1023與一個驅動滾筒1024,但導引滾筒1023之數目亦可為兩個以上,驅動滾筒1024之數目亦可為兩個以上。導引滾筒1023與驅動滾筒1024中之至少一個亦可配置於第1捲筒構件1021內側,與第1捲筒構件1021內接。又,第1捲筒構件1021中從第1捲筒構件1021徑方向觀看為與光罩M之圖案不重疊之部分(Y軸方向兩端側),可對照明光束EL1001具有透光性,亦可不具有透光性。又,導引滾筒1023及驅動滾筒1024之一方或雙方,亦可係例如圓錐台狀,其中心軸(旋轉軸)相對第1中心軸AX1001為非平行。 In addition, although the
第1檢測器1025係以光學方式檢測第1捲筒構件1021之旋轉位置。第1檢測器1025包含例如旋轉編碼器。第1檢測器1025將顯示所檢測出之第1捲筒構件1021之旋轉位置之資訊供應至控制裝置1014。包含電動馬達等致動器之第1驅動部1026依據從控制裝置1014供應之控制訊號,調整用以使驅動滾筒1024旋轉之力矩。控制裝置1014藉由根據第1檢測器1025之檢測結果控制第1驅動部1026,來控制第1捲筒構件1021之旋轉位置。換言之,控制裝置1014控制保持於光罩保持裝置1012之光罩M之旋轉位置與旋轉速度之一方或雙方。 The
此外,於第1檢測器1025亦能附加以光學方式測量在圖3中之Y軸方向之第1捲筒構件1021位置之感測器(以下稱為Y方向位置測量感測器)。雖圖2、圖3所示之第1捲筒構件1021之Y方向位置基本上被限制成不變動,但為了進行基板P上之被曝光區域或對準標記與光罩M之圖案之相對位置對齊,亦可考慮組裝使第1捲筒構件1021(光罩M)微動於Y方向之機構(致動器)。此種情形下,亦能利用來自Y方向位置測量感測器之測量資訊,控制第1捲筒構件1021之Y方向微動機構。 In addition, a sensor that optically measures the position of the
如圖2所示,搬送裝置1009具備第1搬送滾筒1030、第1導引構件1031、 形成配置基板P上之投影區域PA之第2面p1002之第2支承構件(以下稱為第2捲筒構件1022)、第2導引構件1033、第2搬送滾筒1034、第2檢測器1035、以及第2驅動部1036。此外,圖1所示之搬送滾筒1008包含第1搬送滾筒1030及第2搬送滾筒1034。 As shown in FIG. 2, the
本實施形態中,從搬送路徑上游往第1搬送滾筒1030搬送來之基板P,經由第1搬送滾筒1030往第1導引構件1031搬送。經由第1導引構件1031之基板P,被半徑r1002支援筒狀或圓柱狀之第2捲筒構件(圓筒體)1022表面支承,往第2導引構件1033搬送。經由第2導引構件1033之基板P,經由第2搬送滾筒1034往搬送路徑之下游搬送。此外,第2捲筒構件1022之旋轉中心線(第2中心線)AX1002與第1搬送滾筒1030與第2搬送滾筒1034之各旋轉中心線,均設定為與Y軸平行。 In this embodiment, the substrate P transferred from the upstream of the transfer path to the
第1導引構件1031及第2導引構件1033例如藉由移動於與基板P之寬度方向交叉之方向移動(在圖2中之XZ面內移動),而在搬送路徑調整作用於基板P之張力等。又,第1導引構件1031(及第1搬送滾筒1030)與第2導引構件1033(及第2搬送滾筒1034)例如能藉由構成為能移動於基板P之寬度方向(Y方向),來調整捲繞於第2捲筒構件1022外周之基板P之Y方向位置等。此外,搬送裝置1009只要能沿投影光學系PL之投影區域PA搬送基板P即可,能適當變更其構成。 The
第2捲筒構件1022形成第2面p1002,該第2面p1002將包含來自投影光學系PL之成像光束所投射之基板P上之投影區域PA之一部分支承成圓弧狀。本實施形態中,第2捲筒構件1022係搬送裝置1009之一部分,且兼作為支承曝光對象之基板P之支承構件(基板載台)。亦即,第2捲筒構件1022亦可係曝光裝置EX之一部分。 The
第2捲筒構件1022能繞其中心軸(以下稱為第2中心軸AX1002)旋轉,基板P沿第2搬送滾筒1034上之外周面(圓筒面)彎曲成圓筒面狀,於所彎 曲之一部分配置投影區域PA。 The
此外,本實施形態中,第1捲筒構件1021外周面中捲繞光罩M之部分之半徑r1001與第2捲筒構件1022外周面中捲繞基板P之部分之半徑r1002設定為實質上相同。此係因假定薄板狀之光罩M之厚度與基板P之厚度大致相等之情形。 In this embodiment, the radius r1001 of the portion of the outer surface of the
另一方面,例如當於第1捲筒構件1021(透射圓筒母材)之外周面藉由鉻層直接形成圖案時,由於能忽視該鉻層之厚度,因此相較於光罩之圖案面半徑仍保持為r1001,若基板P之厚度為200μm程度,則在投影區域PA之基板P之表面之半徑為r1002+200μm。此種情形,亦可將第2捲筒構件1022外周面中捲繞基板P之部分之半徑r1002縮小基板P之厚度量。 On the other hand, for example, when a pattern is formed directly on the outer peripheral surface of the first reel member 1021 (transmission cylindrical base material) by a chromium layer, the thickness of the chromium layer can be neglected, so compared to the pattern surface of a photomask The radius remains r1001. If the thickness of the substrate P is about 200 μm, the radius of the surface of the substrate P in the projection area PA is r1002+200 μm. In this case, the radius r1002 of the portion of the outer peripheral surface of the
由上述可知,為了嚴格地進行條件設定,亦可將第1捲筒構件1021與第2捲筒構件1022之各半徑決定成第1捲筒構件1021之外周面所支承之光罩之圖案面(圓筒面)之半徑與第2捲筒構件1022之外周面所支承之基板P之表面之半徑相等。 From the above, in order to strictly set the conditions, the radii of the
本實施形態中,第2捲筒構件1022藉由從包含電動馬達等致動器之第2驅動部1036供應之力矩而旋轉。第2檢測器1035包含例如旋轉編碼器,第2檢測器1035係以光學方式檢測第2捲筒構件1022之旋轉位置。第2檢測器1035將顯示所檢測出之第2捲筒構件1022之旋轉位置之資訊供應至控制裝置1014。第2驅動部1026依據從控制裝置1014供應之控制訊號,調整用以使第2捲筒構件1022旋轉之力矩。控制裝置1014藉由根據第2檢測器1035之檢測結果控制第2驅動部1036,來控制第2捲筒構件1022之旋轉位置,使第1捲筒構件1021與第2捲筒構件1022同步移動(同步旋轉)。 In the present embodiment, the
此外,當基板P為薄之可撓性膜時,亦有在捲於第2捲筒構件1022時產生皺紋或扭曲之情形。因此,使基板P盡可能筆直地進入至與第2捲筒構件1022外周面之接觸位置、以及使賦予基板P之搬送方向(X方向)之張 力盡可能為一定等係重要。在此種觀點下,控制裝置1014係將第2驅動部1036控制成第2捲筒構件1022之旋轉速度不均極度地小。 In addition, when the substrate P is a thin flexible film, wrinkling or twisting may occur when it is wound around the
此外,本實施形態中,若將包含第1捲筒構件1021之第1中心軸AX1001、以及第2捲筒構件1022之第2中心軸AX1002之平面設為中心面p1003(與YZ面平行),則在中心面p1003與圓筒狀之第1面p1001交叉之位置附近,中心面p1003與第1面p1001會成為近似地正交之關係,同樣地,在中心面p1003與圓筒狀之第2面p1002交叉之位置附近,中心面p1003與第2面p1002會成為近似地正交之關係。 In the present embodiment, if the plane including the first central axis AX1001 of the
本實施形態之曝光裝置EX係假定為搭載所謂多透鏡方式之投影光學系之曝光裝置。投影光學系PL具備投影光罩M之圖案中一部分之像之複數個投影模組。例如,圖2中,於中心面p1003左側有三個投影模組(投影光學系)PL1001,PL1003,PL1005於Y方向以一定間隔配置,於中心面p1003右側亦有三個投影模組(投影光學系)PL1002,PL1004,PL1006於Y方向以一定間隔配置。 The exposure apparatus EX of this embodiment is assumed to be an exposure apparatus equipped with a projection optical system of a so-called multi-lens system. The projection optical system PL includes a plurality of projection modules that project a part of the image in the pattern of the mask M. For example, in FIG. 2, there are three projection modules (projection optics) PL1001, PL1003, and PL1005 on the left side of the center plane p1003 at certain intervals in the Y direction, and there are also three projection modules (projection optics) on the right side of the center plane p1003. PL1002, PL1004, PL1006 are arranged at a fixed interval in the Y direction.
此種多透鏡方式之曝光裝置EX中,藉由掃描使被以複數個投影模組PL1001~PL1006曝光之區域(投影區域PA1001~PA1006)之Y方向端部彼此疊合,藉此投影所欲圖案之整體像。此種曝光裝置EX,即使在處理光罩M上之圖案之Y方向尺寸變大而必然地Y方向寬度較大之基板P之必要性產生時,由於僅要於Y方向增設投影模組與對應其之照明裝置1013側之模組即可,因此有能容易地適用於面板尺寸(基板P之寬度)之大型化之優點。 In this multi-lens exposure apparatus EX, the Y-direction end portions of the areas (projection areas PA1001 to PA1006) exposed by the plurality of projection modules PL1001 to PL1006 are overlapped with each other by scanning, thereby projecting the desired pattern The overall image. In such an exposure device EX, even when the necessity of processing the pattern P on the reticle M in the Y direction becomes larger and the substrate P with a larger width in the Y direction inevitably arises, it is only necessary to add a projection module in the Y direction The module on the side of the
此外,曝光裝置EX亦可非為多透鏡方式。例如,當基板P之寬度方向尺寸小至某程度時,曝光裝置EX亦可藉由一個投影模組將圖案全寬之像投影於基板P。又,複數個投影模組PL1001~PL1006,亦可分別投影對應一個元件之圖案。亦即,曝光裝置EX亦可藉由複數個投影模組並行地投影複數個元件用之圖案。 In addition, the exposure device EX may not be a multi-lens system. For example, when the width direction dimension of the substrate P is small to a certain extent, the exposure device EX may also project an image with a full width of the pattern on the substrate P by a projection module. In addition, a plurality of projection modules PL1001~PL1006 can also project a pattern corresponding to one element respectively. That is, the exposure device EX can also project the patterns for the plural elements in parallel by the plural projection modules.
本實施形態之照明裝置1013具備光源裝置(圖示略)及照明光學系IL。如圖4所示,照明光學系IL具備與複數個投影模組PL1001~PL1006之各個對應而於Y軸方向排列之複數個(例如六個)照明模組IL1001~IL1006。光源裝置包含例如水銀燈等燈光源、或雷射二極體、發光二極體(LED)等固態光源。光源裝置射出之照明光係例如從燈光源射出之輝線(g線、h線、i線)、KrF準分子雷射光(波長248nm)等遠紫外光(DUV光)、ArF準分子雷射光(波長193nm)等。從光源裝置射出之照明光,照度分布被均一化,透過例如光纖等導光構件分配至複數個照明模組IL1001~IL1006。 The
此外,光源裝置亦可配置於第1捲筒構件1021內側,亦可配置於第1捲筒構件1021外側。又,光源裝置亦可係與曝光裝置EX不同之裝置(外部裝置)。 In addition, the light source device may be disposed inside the
複數個照明模組IL1001~IL1006分別包含透鏡等複數個光學構件。本實施形態中,將從光源裝置射出而通過複數個照明模組IL1001~IL1006之任一者之光稱為照明光束EL1。複數個照明模組IL1001~IL1006之各個包含例如積分器光學系、桿透鏡、複眼透鏡等,以均一照度分布之照明光束EL1照明照明區域IR。本實施形態中,複數個照明模組IL1001~IL1006配置於第1捲筒構件1021內側。複數個照明模組IL1001~IL1006之各個從第1捲筒構件1021內側透過第1捲筒構件1021而照明保持於第1捲筒構件1021外周面之光罩M上之各照明區域IR(IR1001~IR1006)。 The plurality of illumination modules IL1001 to IL1006 respectively include a plurality of optical components such as lenses. In this embodiment, the light emitted from the light source device and passing through any one of the plurality of illumination modules IL1001 to IL1006 is referred to as an illumination light beam EL1. Each of the plurality of illumination modules IL1001~IL1006 includes, for example, an integrator optical system, a rod lens, a compound eye lens, etc., and illuminates the illumination area IR with an illumination beam EL1 of uniform illumination distribution. In this embodiment, a plurality of lighting modules IL1001 to IL1006 are arranged inside the
本實施形態中,將各照明模組依-Y側(圖2紙面前方側)往+Y側(圖2紙面深側)之順序分別稱為第1照明模組IL1001、第2照明模組IL1002、第3照明模組IL1003、第4照明模組IL1004、第5照明模組IL1005、第6照明模組IL1006。亦即,複數個照明模組IL1001~IL1006中配置於最-Y側者為第1照明模組IL1001,配置於最+Y側者為第6照明模組IL1006。此外,投影光學系PL具備之投影模組之數目亦可為一個以上、五個以下,亦可為七 個以上。 In this embodiment, each lighting module is referred to as the first lighting module IL1001 and the second lighting module IL1002 in the order of -Y side (the front side of the paper surface in FIG. 2) to +Y side (the deep side of the paper surface in FIG. 2). , The third lighting module IL1003, the fourth lighting module IL1004, the fifth lighting module IL1005, the sixth lighting module IL1006. That is, among the plurality of lighting modules IL1001 to IL1006, the first lighting module IL1001 is disposed on the most-Y side, and the sixth lighting module IL1006 is disposed on the most-Y side. In addition, the number of projection modules included in the projection optical system PL may be one or more, five or less, or seven or more.
複數個照明模組IL1001~IL1006係在與第1中心軸AX1001交叉之方向(例如X軸方向)分離配置成彼此不干涉。第1照明模組IL1001、第3照明模組IL1003、以及第5照明模組IL1005配置於從Y軸方向觀看時為彼此重疊之位置。第1照明模組IL1001、第3照明模組IL1003、以及第5照明模組IL1005於Y軸方向彼此分離配置。 The plurality of illumination modules IL1001 to IL1006 are arranged in a direction (for example, X-axis direction) crossing the first central axis AX1001 so as not to interfere with each other. The first lighting module IL1001, the third lighting module IL1003, and the fifth lighting module IL1005 are arranged at positions that overlap each other when viewed from the Y-axis direction. The first lighting module IL1001, the third lighting module IL1003, and the fifth lighting module IL1005 are arranged apart from each other in the Y-axis direction.
本實施形態中,第2照明模組IL1002配置成從Y軸方向觀看時相對中心面p1003與第1照明模組IL1001成對稱。第4照明模組IL1004及第6照明模組IL1006配置於從Y軸方向觀看時為與第2照明模組IL1002重疊之位置。第2照明模組IL1002、第4照明模組IL1004、以及第6照明模組IL1006於Y軸方向彼此分離配置。 In the present embodiment, the second lighting module IL1002 is arranged to be symmetrical to the first lighting module IL1001 with respect to the center plane p1003 when viewed from the Y-axis direction. The fourth lighting module IL1004 and the sixth lighting module IL1006 are arranged at positions that overlap with the second lighting module IL1002 when viewed from the Y-axis direction. The second lighting module IL1002, the fourth lighting module IL1004, and the sixth lighting module IL1006 are arranged apart from each other in the Y-axis direction.
複數個照明模組IL1001~IL1006,均係往相對第1捲筒構件1021之第1中心軸AX1001之放射方向(徑方向)中與中心面p1003交叉之第1徑方向D1001或第2徑方向D1002照射照明光束EL1。各照明模組之照明光束EL1之照射方向,係依照明模組於Y軸方向排列之順序交互變化。例如來自第1照明模組IL1001之照明光束之照射方向(第1徑方向D1001)較Z軸方向往-X側傾斜,來自第2照明模組IL1002之照明光束之照射方向(第2徑方向D1002)較-Z軸方向往+X側傾斜。同樣地,來自第3照明模組IL1003及第5照明模組IL1005之各個之照明光束之照射方向,係與第1照明模組IL1001之照射方向實質上平行,來自第4照明模組IL1004及第6照明模組IL1006之各個之照明光束之照射方向,係與第2照明模組IL1002之照射方向實質上平行。 The plurality of illumination modules IL1001 to IL1006 are in the first radial direction D1001 or the second radial direction D1002 that intersects the central plane p1003 in the radial direction (radial direction) of the first central axis AX1001 relative to the
圖5係顯示本實施形態之照明區域IR及投影區域PA之配置之圖。此外,圖5係圖示從-Z側觀看配置於第1捲筒構件1021之光罩M上之照明區域IR之俯視圖(圖5中之左圖)與從+Z側觀看配置於第2捲筒構件1022之基 板P上之投影區域PA之俯視圖(圖5中之右圖)。圖5中之符號Xs顯示第1捲筒構件1021或第2捲筒構件1022之移動方向(旋轉方向)。 FIG. 5 is a diagram showing the arrangement of the illumination area IR and the projection area PA in this embodiment. In addition, FIG. 5 illustrates a plan view (left image in FIG. 5) of the illumination area IR disposed on the reticle M of the
第1至第6照明模組IL1001~IL1006,分別照明光罩M上之第1至第6照明區域IR1001~IR1006。例如,第1照明模組IL1001照明第1照明區域IR1001,第2照明模組IL1002照明第2照明區域IR1002。 The first to sixth lighting modules IL1001 to IL1006 respectively illuminate the first to sixth lighting regions IR1001 to IR1006 on the reticle M. For example, the first lighting module IL1001 illuminates the first lighting area IR1001, and the second lighting module IL1002 illuminates the second lighting area IR1002.
本實施形態之第1照明區域IR1001,雖說明其係於Y方向細長之梯形區域,但依之後說明之投影光學系(投影模組)PL構成之不同,亦可為包含此梯形區域之長方形區域。第3照明區域IR1003及第5照明區域IR1005均為與第1照明區域IR1001相同形狀之區域,於Y軸方向分隔一定間隔配置。又,第2照明區域IR1002係相對中心面p1003為與第1照明區域IR1001對稱之梯形(或長方形)之區域。第4照明區域IR1004及第6照明區域IR1006均為與第2照明區域IR1002相同形狀之區域,於Y軸方向分隔一定間隔配置。 Although the first illumination region IR1001 of this embodiment is described as a trapezoidal region elongated in the Y direction, it may be a rectangular region including the trapezoidal region depending on the configuration of the projection optical system (projection module) PL described later. . The third illumination region IR1003 and the fifth illumination region IR1005 are both regions of the same shape as the first illumination region IR1001, and are arranged at a constant interval in the Y-axis direction. The second illumination region IR1002 is a trapezoidal (or rectangular) region that is symmetrical to the first illumination region IR1001 with respect to the center plane p1003. The fourth illumination region IR1004 and the sixth illumination region IR1006 are both regions of the same shape as the second illumination region IR1002, and are arranged at a constant interval in the Y-axis direction.
如圖5所示,第1至第6照明區域IR1001~IR1006之各個配置成沿第1面p1001之周方向觀看時相鄰之梯形照明區域之斜邊部之三角部係重疊(overlap)。因此,例如藉由第1捲筒構件1021之旋轉而通過第1照明區域IR1001之光罩M上之第1區域A1001,與藉由第1捲筒構件1021之旋轉而通過第2照明區域IR1002之光罩M上之第2區域A1002一部分重複。 As shown in FIG. 5, each of the first to sixth illumination regions IR1001 to IR1006 is arranged such that the triangles of the oblique sides of the adjacent trapezoidal illumination regions overlap when viewed in the circumferential direction of the first surface p1001. Therefore, for example, the first area A1001 on the reticle M passing through the first illumination area IR1001 by the rotation of the
本實施形態中,光罩M具有形成有圖案之圖案形成區域A1003、與未形成有圖案之圖案非形成區域A1004。該圖案非形成區域A1004配置成框狀包圍圖案形成區域A1003,具有遮蔽照明光束EL1之特性。光罩M之圖案形成區域A1003伴隨第1捲筒構件1021之旋轉往方向Xs移動,圖案形成區域A1003中之Y軸方向之各部分區域通過第1至第6照明區域IR1001~IR1006之任一者。換言之,第1至第6照明區域IR1001~IR1006配置成涵蓋圖案形成區域A1003之Y軸方向全寬。 In this embodiment, the mask M has a pattern-formed area A1003 in which a pattern is formed, and a pattern non-formation area A1004 in which a pattern is not formed. The pattern non-formation area A1004 is arranged in a frame shape to surround the pattern formation area A1003, and has the characteristic of blocking the illumination light beam EL1. The pattern forming area A1003 of the reticle M moves in the direction Xs with the rotation of the
如圖2所示,投影光學系PL具備排列於Y軸方向之複數個投影模組PL1001~PL1006。複數個投影模組PL1001~PL1006之各個,與第1至第6照明區域IR1001~IR1006之各個以一對一對應,將被對應之照明模組照明之照明區域IR內所出現之光罩M之局部圖案之像投影於基板P上之各投影區域PA。 As shown in FIG. 2, the projection optical system PL includes a plurality of projection modules PL1001 to PL1006 arranged in the Y-axis direction. Each of the plurality of projection modules PL1001~PL1006 corresponds one-to-one with each of the first to sixth illumination regions IR1001~IR1006, and the photomask M appearing in the illumination region IR illuminated by the corresponding illumination module The image of the partial pattern is projected on each projection area PA on the substrate P.
例如,第1投影模組PL1001對應於第1照明模組IL1001,將被第1照明模組IL1001照明之第1照明區域IR1001(參照圖5)中之光罩M之圖案像投影於基板P上之第1投影區域PA1001。第3投影模組PL1003、第5投影模組PL1005分別與第3照明模組IL1003、第5照明模組IL1005對應。第3投影模組PL1003及第5投影模組PL1005配置於從Y軸方向觀看時不與第1投影模組PL1001重疊之位置。 For example, the first projection module PL1001 corresponds to the first illumination module IL1001, and the pattern image of the mask M in the first illumination region IR1001 (see FIG. 5) illuminated by the first illumination module IL1001 is projected on the substrate P The first projection area PA1001. The third projection module PL1003 and the fifth projection module PL1005 correspond to the third illumination module IL1003 and the fifth illumination module IL1005, respectively. The third projection module PL1003 and the fifth projection module PL1005 are arranged at positions that do not overlap with the first projection module PL1001 when viewed from the Y-axis direction.
又,第2投影模組PL1002對應於第2照明模組IL1002,將被第2照明模組IL1002照明之第2照明區域IR1002(參照圖5)中之光罩M之圖案像投影於基板P上之第2投影區域PA1002。第2投影模組PL1002配置於從Y軸方向觀看時相對第1投影模組PL1001挾著中心面p1003成對稱之位置。 Moreover, the second projection module PL1002 corresponds to the second illumination module IL1002, and the pattern image of the mask M in the second illumination region IR1002 (see FIG. 5) illuminated by the second illumination module IL1002 is projected on the substrate P The second projection area PA1002. The second projection module PL1002 is arranged at a position symmetrical with respect to the first projection module PL1001 against the center plane p1003 when viewed from the Y-axis direction.
第4投影模組PL1004、第6投影模組PL1006分別與第4照明模組IL1004、第6照明模組IL1006對應配置,第4投影模組PL1004及第6投影模組PL1006配置於從Y軸方向觀看時不與第2投影模組PL1002重疊之位置。 The fourth projection module PL1004 and the sixth projection module PL1006 are respectively arranged corresponding to the fourth illumination module IL1004 and the sixth illumination module IL1006, and the fourth projection module PL1004 and the sixth projection module PL1006 are arranged from the Y axis direction The position that does not overlap with the second projection module PL1002 when viewing.
此外,本實施形態中,將從照明裝置1013之各照明模組IL1001~IL1006到達光罩M上之各照明區域IR1001~IR1006之光稱為照明光束EL1,將受到與各照明區域IR1001~IR1006中出現之光罩M之局部圖案對應之強度分布調變而射入各投影模組PL1001~PL1006並到達各投影區域PA1001~PA1006之光稱為成像光束EL2。 In addition, in this embodiment, the light that reaches the illumination regions IR1001 to IR1006 from the illumination modules IL1001 to IL1006 of the
如圖5中之右圖所示,第1照明區域IR1001中之圖案像被投影於第1 投影區域PA1001,第3照明區域IR1003中之圖案像被投影於第3投影區域PA1003,第5照明區域IR1005中之圖案像被投影於第5投影區域PA1005。本實施形態中,第1投影區域PA1001、第3投影區域PA1003、以及第5投影區域PA1005配置成於Y軸方向排列成一列。 As shown in the right diagram in FIG. 5, the pattern image in the first illumination area IR1001 is projected on the first projection area PA1001, and the pattern image in the third illumination area IR1003 is projected on the third projection area PA1003, the fifth illumination area The pattern image in IR1005 is projected on the fifth projection area PA1005. In the present embodiment, the first projection area PA1001, the third projection area PA1003, and the fifth projection area PA1005 are arranged in a line in the Y-axis direction.
又,第2照明區域IR1002中之圖案像被投影於第2投影區域PA1002。本實施形態中,第2投影區域PA1002配置成從Y軸方向觀看時相對中心面p1003與第1投影區域PA1001成對稱。又,第4照明區域IR1004中之圖案像被投影於第4投影區域PA1004,第6照明區域IR1006中之圖案像被投影於第6投影區域PA1006。本實施形態中,第2投影區域PA1002、第4投影區域PA1004、以及第6投影區域PA1006配置成於Y軸方向排列成一列。 In addition, the pattern image in the second illumination area IR1002 is projected on the second projection area PA1002. In the present embodiment, the second projection area PA1002 is arranged to be symmetrical with the first projection area PA1001 with respect to the center plane p1003 when viewed from the Y-axis direction. In addition, the pattern image in the fourth illumination area IR1004 is projected on the fourth projection area PA1004, and the pattern image in the sixth illumination area IR1006 is projected on the sixth projection area PA1006. In this embodiment, the second projection area PA1002, the fourth projection area PA1004, and the sixth projection area PA1006 are arranged in a line in the Y-axis direction.
第1至第6投影區域PA1001~PA1006之各個配置成沿第2面p1002之周方向觀看時在與第2中心軸AX1002平行之方向相鄰之投影區域與端部(梯形之三角部分)係重疊。因此,例如藉由第2捲筒構件1022之旋轉而通過第1投影區域PA1001之基板P上之第3區域A1005,與藉由第2捲筒構件1022之旋轉而通過第2投影區域PA1002之基板P上之第4區域A1006一部分重複。 The first to sixth projection areas PA1001 to PA1006 are arranged such that the projection area adjacent to the direction parallel to the second central axis AX1002 and the end portion (trapezoidal triangle portion) overlap when viewed along the circumferential direction of the second surface p1002 . Therefore, for example, the third area A1005 on the substrate P passing through the first projection area PA1001 by the rotation of the
第1投影區域PA1001與第2投影區域PA1002,各自之形狀等被設定為在第3區域A1005與第4區域A1006重複之區域之曝光量與不重複之區域之曝光量實質上相同。 The shapes of the first projection area PA1001 and the second projection area PA1002 are set so that the exposure amount in the area where the third area A1005 and the fourth area A1006 overlap is substantially the same as the exposure amount in the non-overlap area.
本實施形態中,在基板P之曝光對象之區域(以下稱為曝光區域A1007)如圖5中之右圖所示,伴隨第2捲筒構件1022之旋轉往方向Xs移動,曝光區域A1007中Y軸方向之各部分區域通過第1至第6投影區域PA1001~PA1006之任一者。換言之,第1至第6投影區域PA1001~PA1006配置成涵蓋曝光區域A1007之Y軸方向全寬。 In this embodiment, as shown in the right diagram of FIG. 5, the area of the substrate P that is exposed to exposure (hereinafter referred to as the exposure area A1007) moves in the direction Xs with the rotation of the
此外,相對第1投影模組PL1001之照明光束EL1之照射方向,例如亦 可為通過第1照明區域IR1001內之任一位置之主光線之行進方向,亦可為通過第1照明區域IR1001中心之主光線之行進方向。相對第2至第6投影模組PL1002~PL1006之照明光束EL1之照射方向亦相同。 In addition, with respect to the irradiation direction of the illumination light beam EL1 of the first projection module PL1001, for example, it may be the traveling direction of the chief ray passing through any position in the first illumination area IR1001, or may be the direction passing through the center of the first illumination area IR1001 The direction of travel of the chief ray. The irradiation direction of the illumination light beam EL1 relative to the second to sixth projection modules PL1002 to PL1006 is also the same.
此外,第1至第6投影區域PA1001~PA1006亦可配置成通過其任一者之基板P上之區域彼此在端部不重複。例如,通過第1投影區域PA1001之第3區域A1005亦可不與通過第2投影區域PA1002之第4區域A1006一部分重複。亦即,即使係多透鏡方式,亦能不進行各投影模組之接續曝光。此情形下,第3區域A1005亦可係被投影對應第1元件之圖案之區域,第4區域A1006亦可係被投影對應第2元件之圖案之區域。上述之第2元件亦可係與第1元件同種之元件,於第4區域A1006投影與第3區域A1005相同之圖案。上述之第2元件亦可係與第1元件不同種類之元件,於第4區域A1006投影與第3區域A1005不同之圖案。 In addition, the first to sixth projection areas PA1001 to PA1006 may be arranged so that the areas on the substrate P passing through any one of them do not overlap with each other at the ends. For example, the third area A1005 passing through the first projection area PA1001 may not partially overlap with the fourth area A1006 passing through the second projection area PA1002. That is, even if it is a multi-lens method, it is not possible to perform continuous exposure of each projection module. In this case, the third area A1005 may also be an area where the pattern corresponding to the first element is projected, and the fourth area A1006 may also be an area where the pattern corresponding to the second element is projected. The above-mentioned second element may also be the same kind of element as the first element, and the same pattern as the third area A1005 is projected on the fourth area A1006. The above-mentioned second element may also be an element of a different type from the first element, and a pattern different from the third area A1005 is projected on the fourth area A1006.
其次,參照圖6說明本實施形態之投影光學系PL之詳細構成。此外,本實施形態中,第2至第6投影模組PL1002~PL1006之各個係與第1投影模組PL1001相同之構成。因此,說明第1投影模組PL1001之構成來代表投影光學系PL。 Next, the detailed configuration of the projection optical system PL of this embodiment will be described with reference to FIG. 6. In addition, in the present embodiment, each of the second to sixth projection modules PL1002 to PL1006 has the same configuration as the first projection module PL1001. Therefore, the configuration of the first projection module PL1001 will be described to represent the projection optical system PL.
圖6所示之第1投影模組PL1001具備將配置於第1照明區域IR1001之光罩M之圖案像成像於中間像面p1007之第1光學系1041、將第1光學系1041形成之中間像之至少一部分再成像於基板P之第1投影區域PA1001之第2光學系1042、以及配置於形成中間像之中間像面p1007之第1視野光闌1043。 The first projection module PL1001 shown in FIG. 6 includes a first
又,第1投影模組PL1001具備用以微調形成於基板P上之光罩之圖案像(以下稱為投影像)之聚焦狀態之聚焦修正光學構件1044、用以在像面內使投影像微橫移之像移修正光學構件1045、微修正投影像之倍率之倍率修正用光學構件1047、以及用以在像面內使投影像微旋轉之旋轉修正機構1046。 In addition, the first projection module PL1001 includes a focus correction
聚焦修正光學構件1044配置於從第1照明區域IR1001射出之成像光束EL2所射入之位置,像移修正光學構件1045配置於從聚焦修正光學構件1044射出之成像光束EL2所射入之位置。倍率修正用光學構件1047配置於從第2光學系1042射出之成像光束EL2所射入之位置。 The focus correction
來自光罩M之圖案之成像光束EL2從第1照明區域IR1001沿法線方向射出,通過聚焦修正光學構件1044射入像移修正光學構件1045。透射過像移修正光學構件1045之成像光束EL2在第1光學系1041之要件即第1偏向構件1050之第1反射面(平面鏡)p1004反射,通過第1透鏡群1051而在第1凹面鏡1052反射,再度通過第1透鏡群1051而在第1偏向構件1050之第2反射面(平面鏡)p1005反射,射入第1視野光闌1043。 The imaging light beam EL2 of the pattern from the mask M is emitted from the first illumination region IR1001 in the normal direction, and enters the image movement correction
通過第1視野光闌1043之成像光束EL2在第2光學系1042之要件即第2偏向構件1057之第3反射面(平面鏡)p1008反射,通過第2透鏡群1058而在第2凹面鏡1059反射,再度通過第2透鏡群1058而在第2偏向構件1057之第4反射面(平面鏡)p1009反射,射入倍率修正用光學構件1047。 The imaging light beam EL2 passing through the
從倍率修正用光學構件1047射出之成像光束EL2,射入基板P上之第1投影區域PA1001,出現於第1照明區域IR1001內之圖案像以等倍(×1)投影於第1投影區域PA1001。 The imaging light beam EL2 emitted from the magnification correction
第1光學系1041與第2光學系1042例如係將戴森(Dyson)系統變形後之遠心反折射光學系。本實施形態中,第1光學系1041之光軸(以下稱為第1光軸AX1003)與中心面p1003實質上正交。第1光學系1041具備第1偏向構件1050、第1透鏡群1051、以及第1凹面鏡1052。從像移修正光學構件1045射出之成像光束EL2在第1偏向構件1050之第1反射面p1004反射而往第1光軸AX1003之一側(-X側)行進,通過第1透鏡群1051射入配置於瞳面之第1凹面鏡1052。在第1凹面鏡1052反射之成像光束EL2,往第1光軸AX1003之另一側(+X側)行進而通過第1透鏡群1051,在第1偏向構件 1050之第2反射面p1005反射而射入第1視野光闌1043。 The first
第1偏向構件1050係延伸於Y軸方向之三角稜鏡。本實施形態中,第1反射面p1004與第2反射面p1005之各個包含形成於三角稜鏡表面之鏡面(反射膜之表面)。通過第1照明區域IR1001中心之成像光束EL2之主光線EL3,沿相對中心面p1003在XZ面內傾斜之第1徑方向D1001行進而射入第1投影模組PL1001。 The
第1偏向構件1050係將成像光束EL2偏向成,從第1照明區域IR1001到達第1反射面p1004之主光線EL3與從第2反射面p1005到達中間像面p1007之主光線EL3(與中心面p1003平行)在XY面內成為非平行。 The
為了形成如以上之光路,本實施形態中,包含第1偏向構件1050之第1反射面p1004與第2反射面p1005所交會之稜線與第1光軸AX1003,將與XY面平行之面設為p1006,相對此面p1006,第1反射面p1004與第2反射面p1005以非對稱之角度配置。 In order to form the optical path as described above, in this embodiment, the ridge line where the first reflecting surface p1004 and the second reflecting surface p1005 of the
當將第1反射面p1004相對於面p1006之角度設為θ 1001、將第2反射面p1005相對於面p1006之角度設為θ 1002時,本實施形態中,角度(θ 1001+θ 1002)設定為90°未滿,角度θ 1001設定為45°未滿,角度θ 1002設定為實質上45°。 When the angle of the first reflecting surface p1004 with respect to the surface p1006 is set to θ 1001 and the angle of the second reflecting surface p1005 with respect to the surface p1006 is set to θ 1002, in this embodiment, the angle (θ 1001+θ 1002) is set It is less than 90°, the angle θ 1001 is set to 45°, and the angle θ 1002 is set to substantially 45°.
藉由將在第1反射面p1004反射而射入第1透鏡群1051之主光線EL3設定為與光軸AX1003平行,該主光線EL3能通過第1凹面鏡1052之中心、亦即瞳面之與光軸AX1003之交點,能確保遠心之成像狀態。因此,圖6中,當將從第1照明區域IR1001到達第1反射面p1004之主光線EL3(第1徑方向D1001)相對於中心面p1003之傾角設為θd時,第1反射面p1004之角度θ 1001只要設定成滿足下述之式(1)即可。 By setting the principal ray EL3 reflected on the first reflecting surface p1004 and entering the
θ 1001=45°-(θd/2)...(1) θ 1001=45°-(θd/2)...(1)
本實施形態中,屬於第1透鏡群1051之複數個透鏡之各個係繞第1光 軸AX1003為軸對稱之形狀。在第1反射面p1004反射之成像光束EL2從相對面p1006之一側(+Z側)射入第1透鏡群1051。第1凹面鏡1052配置於第1光學系1041之瞳面之位置或其近旁。 In the present embodiment, each of the plurality of lenses belonging to the
通過第1透鏡群1051之成像光束EL2之主光線EL3,射入第1光軸AX1003與第1凹面鏡1052之交點。在第1凹面鏡1052反射之成像光束EL2,與往第1凹面鏡1052射入前比較,係在第1透鏡群1051中沿相對面p1006為對稱之光路行進。在第1凹面鏡1052反射之成像光束EL2,從第1透鏡群1051之另一方側(-Z側)射出,在第1偏向構件1050之第2反射面p1005反射,沿與中心面p1003平行之主光線EL3行進。 The chief ray EL3 of the imaging light beam EL2 passing through the
第1視野光闌1043具有規定第1投影區域PA1001之形狀之開口。亦即,第1視野光闌1043之開口形狀規定第1投影區域PA1001之形狀。因此,如圖6所示,當能於中間像面p1007配置第1視野光闌1043時,能使此第1視野光闌1043之開口形狀成為如先前圖5之右圖所示之梯形,此情形下,第1至第6照明區域IR1006各自之形狀,可不與第1至第6投影區域PA1001~PA1006各自之形狀(梯形)相似,可為包含各投影區域(第1視野光闌1043之開口)之梯形形狀之長方形。 The
第2光學系1042與第1光學系1041為相同構成,設置成相對包含第1視野光闌1043之中間像面p1007與第1光學系1041成對稱。第2光學系1042之光軸(以下稱為第2光軸AX1004)與中心面p1003實質上正交。第2光學系1042具備第2偏向構件1057、第2透鏡群1058、以及第2凹面鏡1059。從第1光學系1041射出而通過第1視野光闌1043之成像光束EL2在第2偏向構件1057之第3反射面p1008反射,通過第2透鏡群1058射入第2凹面鏡1059。在第2凹面鏡1059反射之成像光束EL2,再度通過第2透鏡群1058,在第2偏向構件1057之第4反射面p1009反射而射入倍率修正用光學構件1047。 The second
第2光學系1042之第2偏向構件1057、第2透鏡群1058、第2凹面鏡1059分別與第1光學系1041之第1偏向構件1050、第1透鏡群1051、第1凹面鏡1052相同。第2偏向構件1057之第3反射面p1008與第2光軸AX1004所構成之角度θ 1003,與第1偏向構件1050之第2反射面p1005與第1光軸AX1003所構成之角度θ 1002實質上相同。又,第2偏向構件1057之第4反射面p1009與第2光軸AX1004所構成之角度θ 1004,與第1偏向構件1050之第1反射面p1004與第1光軸AX1003所構成之角度θ 1001實質上相同。屬於第2透鏡群1058之複數個透鏡之各個係繞第2光軸AX1004為軸對稱之形狀。 The
第2凹面鏡1059配置於第2光學系1042之瞳面之位置或其近旁。 The second
通過第1視野光闌1043之成像光束EL2,往沿與中心面p1003平行之主光線之方向行進而射入第3反射面(平面)p1008。第3反射面p1008相對第2光學系1042之第2光軸AX1004(或面p1006或中間像面p1007)之傾斜角度θ 1003在XZ面內為45°,在此處反射之成像光束EL2,射入第2透鏡群1058之上半部分之視野區域。射入該第2透鏡群1058之成像光束EL2之主光線EL3,成為與第2光軸AX1004平行,射入第2光軸AX1004與第2凹面鏡1059之交點。 The imaging light beam EL2 passing through the
在第2凹面鏡1059反射之成像光束EL2,與往第2凹面鏡1059射入前比較,係相對第2光軸AX1004對稱地行進。在第2凹面鏡1059反射之成像光束EL2,再度通過第2透鏡群1058之下半部分之視野區域,在第2偏向構件1057之第4反射面p1009反射,往與中心面p1003交叉之方向行進。 The imaging light beam EL2 reflected by the second
從第2光學系1042射出並往第1投影區域PA1001之成像光束EL2之主光線EL3之行進方向,設定為相對包含第1視野光闌1043之中間像面p1007與從第1照明區域IR1001射入第1光學系1041之成像光束EL2之主光線EL3之行進方向成對稱。亦即,在XZ面內觀看時,第2偏向構件1057 之第4反射面p1009相對第2光軸AX1004之角度θ 1004,與先前之式(1)同樣地設定成滿足下述式(2)。 The traveling direction of the chief ray EL3 of the imaging light beam EL2 emitted from the second
θ 1004=45°-(θd/2)...(2) θ 1004=45°-(θd/2)...(2)
藉此,從第2光學系1042射出之成像光束EL2之主光線EL3,往基板P上之第1投影區域PA1001(圓筒面狀)之法線方向(往圖2中之旋轉中心線AX1002之方向)行進。 By this, the chief ray EL3 of the imaging light beam EL2 emitted from the second
本實施形態中,聚焦修正光學構件1044、像移修正光學構件1045、旋轉修正機構1046及倍率修正用光學構件1047,構成調整第1投影模組PL1001之成像特性之成像特性調整機構。藉由控制成像特性調整機構,而能就每個投影模組調整在基板P上之投影像之投影條件。此處所指之投影條件,包含在基板P上之投影區域之並進位置或旋轉位置、倍率、聚焦中之1以上之項目。投影條件,能就同步掃描時相對基板P之投影區域之每一個位置來決定。藉由調整投影像之投影條件,而能修正與光罩M之圖案比較時之投影像之歪斜。此外,成像特性調整機構之構成能適當變更,能省略其至少一部分。 In this embodiment, the focus correction
聚焦修正光學構件1044例如係將兩片楔形之稜鏡逆向(圖6中於X方向為逆向)疊合成整體為透明之平行平板。藉由使此一對稜鏡不改變彼此對向之面間之間隔而於斜面方向滑動,即能改變作為平行平板之厚度。藉此微調第1光學系1041之實效光路長,並微調形成於中間像面p1007及投影區域PA1001之圖案像之聚焦狀態。 The focus correction
像移修正光學構件1045係以能在圖6中之XZ面內傾斜之透明平行平板玻璃與能傾斜於與其正交之方向之透明平行平板玻璃構成。藉由調整該兩片平行平板玻璃之各傾斜量,而能使形成於中間像面p1007及投影區域PA1001之圖案像微幅位移於X方向或Y方向。 The image-shift correction
倍率修正用光學構件1047,係構成為例如將凹透鏡、凸透鏡、凹透鏡 之三片以既定間隔同軸配置,前後凹透鏡為固定,使其間之凸透鏡移動於光軸(主光線)方向。藉此,形成於投影區域PA1001之圖案像,可一邊維持遠心之成像狀態、一邊等方地擴大或縮小微小量。此外,構成倍率修正用光學構件1047之三片透鏡群之光軸,在XZ面內傾斜成與通過此處之主光線EL3平行。 The magnification correction
旋轉修正機構1046,例如係藉由致動器(圖示略)使第1偏向構件1050繞與第1光軸AX1003平行之軸微幅旋轉者。能藉由此旋轉修正機構1046,使形成於中間像面p1007之像在該中間像面p1007內微幅旋轉。 The
如上述,從第1投影模組PL1001射出之成像光束EL2,係於配置於第2捲筒構件1022外周面之基板P之第1投影區域PA1001形成出現於第1照明區域IR1001之圖案之像。本實施形態中,通過第1照明區域IR1001中心之成像光束EL2之主光線EL3,係從第1照明區域IR1001往法線方向射出,對第1投影區域PA1001從法線方向射入。以此方式,出現於圓筒面狀之第1照明區域IR1001之光罩M之圖案之像,被投影於圓筒面狀之基板P上之第1投影區域PA1001。又,出現於第2至第6照明區域IR1002~IR1006各自之圖案之像,亦同樣地被投影於圓筒面狀之基板P上之第2至第6投影區域PA1002~PA1006之各個。 As described above, the imaging light beam EL2 emitted from the first projection module PL1001 forms an image of a pattern appearing in the first illumination area IR1001 in the first projection area PA1001 of the substrate P disposed on the outer peripheral surface of the
本實施形態中,如圖2、圖5所示,奇數之照明區域IR1001、IR1003、IR1005與偶數之照明區域IR1002、IR1004、IR1006,配置於相對中心面p1003為對稱之距離,且奇數之投影區域PA1001、PA1003、PA1005與偶數之投影區域PA1002、PA1004、PA1006,亦配置於相對中心面p1003為對稱之距離。因此,能將六個投影模組之各個全部作成相同構成,能共通化投影光學系之零件,簡化組裝步驟、檢查步驟,且能將各投影模組之成像特性(像差等)彙整成一樣。此點,特別是在藉由多透鏡方式在各個投影模組之投影區域間進行接續曝光之情形,形成於基板P上之面板用圖案之品質(轉印忠實度) 可不取決於面板內之位置或區域而保持為一定,係為有利。 In this embodiment, as shown in FIGS. 2 and 5, the odd-numbered illumination areas IR1001, IR1003, IR1005 and the even-numbered illumination areas IR1002, IR1004, IR1006 are arranged at a symmetrical distance from the central plane p1003, and an odd-numbered projection area PA1001, PA1003, PA1005 and even-numbered projection areas PA1002, PA1004, PA1006 are also arranged at a symmetrical distance from the central plane p1003. Therefore, all of the six projection modules can be made to have the same structure, the components of the projection optics can be shared, the assembly steps and inspection steps can be simplified, and the imaging characteristics (aberrations, etc.) of each projection module can be aggregated into the same . This point, especially in the case of continuous exposure between the projection areas of each projection module by the multi-lens method, the quality (transfer faithfulness) of the pattern for the panel formed on the substrate P may not depend on the position within the panel It is beneficial to maintain a certain area or area.
又,一般的曝光裝置,若投影區域彎曲成圓筒面狀,例如在成像光束從非垂直之方向射入投影區域時等,有時會因投影區域位置之不同而使散焦變大。其結果,有時會產生曝光不良,產生不良元件。 In addition, in a general exposure apparatus, if the projection area is curved into a cylindrical surface, for example, when an imaging light beam enters the projection area from a non-perpendicular direction, the defocus may increase depending on the position of the projection area. As a result, poor exposure may occur and defective devices may occur.
本實施形態中,投影光學系PL(例如第1投影模組PL1001)之第1偏向構件1050(第1反射面p1004)及第2偏向構件1057(第4反射面p1009),係將主光線EL3偏向成從第1照明區域IR1001往法線方向射出之主光線EL3從法線方向被投射於第1投影區域PA1001。因此,基板處理裝置1011,能減少在投影區域PA1001內之投影像之聚焦誤差、特別是在圖5所示之各投影區域PA1001~PA1006內之投影像之最佳聚焦面整體從各投影模組PL1001~PL1006之焦深(Depth of Focus)之寬度大幅偏移,抑制曝光不良等之產生。其結果,可抑制元件製造系統1001之不良元件之產生。 In this embodiment, the first deflecting member 1050 (first reflecting surface p1004) and the second deflecting member 1057 (fourth reflecting surface p1009) of the projection optical system PL (for example, the first projection module PL1001) connect the principal ray EL3 The main beam EL3 emitted from the first illumination area IR1001 in the normal direction is projected on the first projection area PA1001 from the normal direction. Therefore, the
本實施形態中,投影光學系PL由於包含配置於形成中間像之位置之第1視野光闌1043,因此能高精度地管理投影像之形狀等。因此,基板處理裝置1011,能減少例如第1至第6投影區域PA1001~PA1006之重疊誤差,抑制曝光不良等之產生。又,第1偏向構件1050之第2反射面p1005係將來自第1照明區域IR1001之主光線EL3偏向成與視野光闌1043正交。因此,基板處理裝置1011,能更高精度地管理投影像之形狀等。 In the present embodiment, since the projection optical system PL includes the
又,本實施形態中,第1至第6投影模組PL1001~PL1006之各個,係將光罩M之圖案之像投影為正立像。因此,在基板處理裝置1011將光罩M之圖案分成第1至第6投影模組PL1001~PL1006來投影時,由於能進行將被投影投影像之區域(例如第3區域A1005及第4區域A1006)一部分重疊之接續曝光,因此光罩M之設計變得容易。 In the present embodiment, each of the first to sixth projection modules PL1001 to PL1006 projects the image of the pattern of the photomask M as an upright image. Therefore, when the
本實施形態中,基板處理裝置1011,由於係由搬送裝置1009一邊沿第2面p1002以一定速度連續搬送基板P、一邊由曝光裝置EX將基板P曝光, 因此能提高曝光處理之生產性。其結果,元件製造系統1001能以良好效率製造元件。 In this embodiment, the
此外,本實施形態中,第1反射面p1004與第2反射面p1005雖配置於相同之偏向構件(第1偏向構件1050)表面,但亦可配置於不同構件之表面。又,第1反射面p1004與第2反射面p1005之一方或雙方亦可配置於第1偏向構件1050之內面,而具有例如藉由全反射條件反射光之特性。 In this embodiment, the first reflection surface p1004 and the second reflection surface p1005 are arranged on the surface of the same deflection member (first deflection member 1050), but they may be arranged on the surface of different members. In addition, one or both of the first reflection surface p1004 and the second reflection surface p1005 may be disposed on the inner surface of the
再者,如上述之與第1反射面p1004、第2反射面p1005相關之變形亦能適用於第3反射面p1008與第4反射面p1009之一方或雙方。例如在將第2面p1002之半徑r1002變更之情形等,第2偏向構件1057之第4反射面p1009,係將角度θ 1004設定成成像光束EL2對第1投影區域PA1001從法線方向射入,並將配置設定成,第1投影區域PA1001與第2投影區域PA1002之中心點之間之圓弧狀周長,與光罩M(半徑r1001)上之對應之照明區域IR1001之中心點與照明區域IR1002之中心點之間之圓弧狀周長一致。 Furthermore, as described above, the deformations related to the first reflecting surface p1004 and the second reflecting surface p1005 can also be applied to one or both of the third reflecting surface p1008 and the fourth reflecting surface p1009. For example, when the radius r1002 of the second surface p1002 is changed, the fourth reflection surface p1009 of the
其次,說明第2實施形態。本實施形態中,有時會對與上述實施形態相同之構成要件賦予與上述實施形態相同之符號,簡化或省略其說明。 Next, the second embodiment will be described. In this embodiment, the same constituent elements as those in the above-mentioned embodiment may be given the same symbols as in the above-mentioned embodiment, and the description thereof may be simplified or omitted.
圖7係顯示本實施形態之基板處理裝置1011構成之圖。本實施形態之搬送裝置1009,具備第1搬送滾筒1030、第1導引構件(空氣旋轉桿等)1031、第4搬送滾筒1071、第5搬送滾筒1072、第6搬送滾筒1073、第2導引構件(空氣旋轉桿等)1033、以及第2搬送滾筒1034。 FIG. 7 is a diagram showing the configuration of the
從搬送路徑上游往第1搬送滾筒1030搬送來之基板P,經由第1搬送滾筒1030往第1導引構件1031搬送。經由第1導引構件1031之基板P,經由第4搬送滾筒1071往第5搬送滾筒1072搬送。第5搬送滾筒1072其中心軸配置於中心面p1003上。經由第5搬送滾筒1072之基板P,經由第6搬送滾筒1073往第2導引構件1033搬送。 The substrate P transferred from the upstream of the transfer path to the
第6搬送滾筒1073相對中心面p1003配置成與第4搬送滾筒1071對稱。經由第2導引構件1033之基板P經由第2搬送滾筒1034往搬送路徑之下游搬送。第1導引構件1033及第2導引構件1033與先前圖2所示之第1導引構件1031及第2導引構件1033同樣地,在搬送路徑中調整作用於基板P之張力。 The
圖7中之第1投影區域PA1001,設定於在第4搬送滾筒1071與第5搬送滾筒1072間被直線搬送之基板P上。在第4搬送滾筒1071與第5搬送滾筒1072之間,基板P被支承成於搬送方向被賦予既定張力,基板P沿平面狀之第2面p1002被移送。 The first projection area PA1001 in FIG. 7 is set on the substrate P that is linearly transported between the
第1投影區域PA1001(第2面p1002)傾斜成相對中心面p1003為非垂直。第1投影區域PA1001之法線方向(以下稱為第1法線方向D1003),配置成相對與中心面p1003正交之面、例如圖6亦有顯示之中間像面p1007而與第1徑方向D1001成對稱。從第1投影模組PL1001射出之成像光束EL2之主光線EL3,對第1投影區域PA1001從第1法線方向D1003射入。換言之,第4搬送滾筒1071與第5搬送滾筒1072被配置成,架設於第4搬送滾筒1071與第5搬送滾筒1072之基板P之第1法線方向D1003,相對與中心面p1003正交之中間像面p1007而與第1徑方向D1001成對稱。 The first projection area PA1001 (second surface p1002) is inclined so as not to be perpendicular to the center plane p1003. The normal direction of the first projection area PA1001 (hereinafter referred to as the first normal direction D1003) is arranged relative to the plane orthogonal to the central plane p1003, for example, the intermediate image plane p1007 shown in FIG. 6 and the first radial direction D1001 is symmetrical. The chief ray EL3 of the imaging beam EL2 emitted from the first projection module PL1001 enters the first projection area PA1001 from the first normal direction D1003. In other words, the
第2投影區域PA1002,設定於在第5搬送滾筒1072與第6搬送滾筒1073間被直線搬送之基板P上。基板P在第5搬送滾筒1072與第6搬送滾筒1073之間,被支承成被賦予一定張力,基板P沿平面狀之第2面p1002被移送。 The second projection area PA1002 is set on the substrate P that is linearly transported between the
第2投影區域PA1002傾斜成相對中心面p1003為非垂直。第2投影區域PA1002之法線方向(以下稱為第2法線方向D1004),配置成相對與中心面p1003正交之中間像面p1007而與第2徑方向D1002成對稱。從第2投影模組PL1002射出之成像光束EL2之主光線EL3,對第2投影區域PA1002從第2法線方向D1004射入。換言之,第5搬送滾筒1072與第6搬送滾筒 1073被配置成,架設於第5搬送滾筒1072與第6搬送滾筒1073之基板P之第2法線方向D1004,相對與中心面p1003正交之中間像面p1007而與第2徑方向D1002成對稱。 The second projection area PA1002 is inclined so as not to be perpendicular to the center plane p1003. The normal direction of the second projection area PA1002 (hereinafter referred to as the second normal direction D1004) is arranged symmetrically to the second radial direction D1002 with respect to the intermediate image plane p1007 orthogonal to the center plane p1003. The chief ray EL3 of the imaging beam EL2 emitted from the second projection module PL1002 enters the second projection area PA1002 from the second normal direction D1004. In other words, the
本實施形態之基板處理裝置1011係藉由第4搬送滾筒1071、第5搬送滾筒1072、以及第6搬送滾筒1073使先前圖2所示之圓筒面狀之第2面p1002接近近似的平面,各投影區域PA1001~PA1006中投影於基板P上之圖案像之轉印忠實度,從焦深(DOF)之觀點來看更為提昇。又,如先前圖2所示,與為了支承與搬送基板P而使用半徑r1002之第2捲筒構件1022之情形相較,能將搬送裝置1009整體之Z方向高度抑制地更低,能使裝置整體小型。 The
又,圖7之裝置構成中,第4搬送滾筒1071、第5搬送滾筒1072、以及第6搬送滾筒1073係搬送裝置1009之一部分,且兼作為支承曝光對象之基板P之支承構件(曝光裝置EX側之基板載台)。此外,亦可於第4搬送滾筒1071與第5搬送滾筒1072之間、第5搬送滾筒1072與第6搬送滾筒1073之間,設置藉由流體軸承以非接觸方式平面支承基板P之背面側之貝努伊方式之墊板,使各投影區域PA1001~PA1006所位於之基板P之局部區域之平坦性更加提高。 In the device configuration of FIG. 7, the
再者,圖7所示之搬送裝置1009之搬送滾筒之至少一個,亦可對投影光學系PL為固定,亦可為可動。例如,第5搬送滾筒1072亦可在包含平行於X軸方向之並進方向、平行於Y軸方向之並進方向、以及平行於Z軸方向之並進方向之三個並進方向與繞平行於X軸方向之軸之旋轉方向、繞平行於Y軸方向之軸之旋轉方向、以及繞平行於Z軸方向之軸之旋轉方向之三個旋轉方向之六方向中(六自由度)之至少一方向(一自由度)微幅移動。或者,亦可藉由相對第5搬送滾筒1072調整第4搬送滾筒1071與第6搬送滾筒1073之一方或雙方之Z軸方向之相對位置,來微調第1投影區域PA1001之第1法線方向D1003或第2投影區域PA1002之第2法線方向D1004與被 平面化支承之基板P之表面所構成之角度。如此,藉由使被選擇之滾筒微幅移動,而能高精度地使相對各投影區域PA1001~PA1006中之圖案投影像面之基板P表面姿勢一致。 Furthermore, at least one of the conveying rollers of the conveying
其次,說明第3實施形態。本實施形態中,有時會對與上述各實施形態相同之構成要件賦予與上述各實施形態相同之符號,簡化或省略其說明。 Next, the third embodiment will be described. In this embodiment, the same constituent elements as those in the above-mentioned embodiments may be given the same symbols as in the above-mentioned embodiments, and the description thereof may be simplified or omitted.
圖8係顯示本實施形態之作為基板處理裝置1011之曝光裝置EX構成,基本構成與先前之圖7相同。不過,與圖7之構成相較差異點在於,設於投影光學系PL之各投影模組PL1001~PL1006內之第2偏向構件1057之第4反射面p1009相對光軸AX1004之角度θ 1004設定為45°、藉由搬送裝置1009搬送之基板P在各投影區域PA1001~PA1006之位置被支承於與中心面p1003正交之平面(與圖8中之XY面平行)。 FIG. 8 shows the configuration of the exposure apparatus EX as the
圖8之構成中,基板P從搬送路徑上游經由第1搬送滾筒1030、第1導引構件1031(空氣旋轉桿等)、第4搬送滾筒1071而往第8搬送滾筒1076搬送。經由第8搬送滾筒1076之基板P經由第2導引構件1033(空氣旋轉桿等)與第2搬送滾筒1034往搬送路徑之下游搬送。 In the configuration of FIG. 8, the substrate P is transported from the upstream of the transport path to the
如圖8所示,在第4搬送滾筒1071與第8搬送滾筒1076之間,基板P伴隨既定張力被支承、搬送成與XY面平行。此情形下,支承基板P之第2面p1002為平面,於該第2面p1002內配置各投影區域PA1001~PA1006。 As shown in FIG. 8, between the
又,在構成各投影模組PL1001~PL1006之第2光學系1042中,第2偏向構件1057之第3反射面p1008與第4反射面p1009配置成從第2光學系1042射出至基板P之成像光束EL2之主光線EL3實質上平行於中心面p1003。亦即,投影光學系PL(投影模組PL1001~PL1006)之第1偏向構件1050及第2偏向構件1057,將成像光路偏向成從圓筒面狀之各照明區域IR1001~IR1006射出於法線方向之各主光線EL3,係從法線方向射入設定於共通 平面上之各投影區域PA1001~PA1006。 Further, in the second
本實施形態中,在從平行於光罩M之第1中心軸AX1001之方向觀看之XZ面內,投影區域PA1001(及PA1003,PA1005)之中心點至投影區域PA1002(及PA1004,PA1006)之中心點之沿第2面p1002(基板P之表面)之距離DFx,設定為與照明區域IR1001(及IR1003,IR1005)之中心點至照明區域IR1002(及IR1004,IR1006)之中心點之沿第1面p1001(半徑r1001之圓筒面)之距離(弦長或周長)DMx實質上相等。 In this embodiment, in the XZ plane viewed from the direction parallel to the first central axis AX1001 of the mask M, the center point of the projection area PA1001 (and PA1003, PA1005) to the center of the projection area PA1002 (and PA1004, PA1006) The distance DFx of the point along the second surface p1002 (the surface of the substrate P) is set from the center point of the illumination area IR1001 (and IR1003, IR1005) to the center point of the illumination area IR1002 (and IR1004, IR1006) along the first surface The distance (chord length or perimeter) DMx of p1001 (the cylindrical surface of radius r1001) is substantially equal.
此處,參照示意表示之圖9說明照明區域IR相互之位置關係與投影區域PA相互之位置關係。此外,圖9中,符號α係顯示第1徑方向D1001與第2徑方向D1002所構成之角度(孔徑角)[°],符號r係顯示第1面p1001之半徑[mm]。 Here, the positional relationship between the illumination regions IR and the projection area PA will be described with reference to FIG. 9 schematically shown. In addition, in FIG. 9, the symbol α indicates the angle (aperture angle) [°] formed by the first radial direction D1001 and the second radial direction D1002, and the symbol r indicates the radius [mm] of the first surface p1001.
圖9中,在XZ面內之照明區域IR1001之中心點至照明區域IR1002之中心點之周長DMx[mm],係使用角度α及半徑r以下述式(3)表示。 In FIG. 9, the perimeter DMx [mm] from the center point of the illumination area IR1001 to the center point of the illumination area IR1002 in the XZ plane is expressed by the following formula (3) using the angle α and the radius r.
DMx=π‧α‧r/180...(3) DMx=π‧α‧r/180...(3)
又,照明區域IR1001之中心點至照明區域IR1002之中心點之直線距離Ds以下述式(4)表示。 The linear distance Ds between the center point of the illumination area IR1001 and the center point of the illumination area IR1002 is expressed by the following formula (4).
Ds=2‧r‧sin(π‧α/360)...(4) Ds=2‧r‧sin(π‧α/360)...(4)
例如,在角度α為30°,半徑r為180mm時,周長DMx為約94.248mm,距離Ds為約93.175mm。亦即,若假定照明區域IR1001之中心點之X座標與投影區域PA1001之中心點之X座標一致、照明區域IR1002之中心點之X座標與投影區域PA1002之中心點之X座標一致,則在將在光罩M之圖案內於周方向分離周長DMx之兩點分別透過投影區域PA1001、PA1002投影於基板P時,該兩點會在基板P上於X方向以距離Ds(Ds<DMx)被曝光。亦即,若根據先前之數值例,其意指透過奇數之投影區域PA1001、PA1003、PA1005曝光於基板P上之圖案與透過偶數之投影區域PA1002、PA1004、 PA1006曝光於基板P上之圖案,在X方向會偏移最大1.073mm程度。 For example, when the angle α is 30° and the radius r is 180 mm, the circumference DMx is about 94.248 mm, and the distance Ds is about 93.175 mm. That is, if it is assumed that the X coordinate of the center point of the illumination area IR1001 is consistent with the X coordinate of the center point of the projection area PA1001, and the X coordinate of the center point of the illumination area IR1002 is consistent with the X coordinate of the center point of the projection area PA1002, then In the pattern of the mask M, two points separated in the circumferential direction by the perimeter DMx are projected on the substrate P through the projection areas PA1001 and PA1002 respectively. exposure. That is, if according to the previous numerical example, it means the pattern exposed on the substrate P through the odd projection areas PA1001, PA1003, PA1005 and the pattern exposed on the substrate P through the even projection areas PA1002, PA1004, PA1006, in The X direction will be offset by a maximum of 1.073mm.
因此,本實施態樣中,係從先前圖6所示之條件改變投影光學系PL內之特定光學構件之配置條件,以在被平面化之基板P上投影區域PA1001之中心點與投影區域PA1002之中心點之間之直線距離DFx與周長DMx實質上相等。 Therefore, in this embodiment, the configuration conditions of the specific optical members in the projection optical system PL are changed from the conditions shown in FIG. 6 previously, so that the center point of the projection area PA1001 and the projection area PA1002 on the planarized substrate P The linear distance DFx between the center points and the perimeter DMx are substantially equal.
具體而言,係將第2偏向構件1057之第4反射面p1009從先前圖6所示之位置往與光軸AX1004(X軸)平行之方向些許錯開,其結果設置成直線距離DFx與周長DMx一致。根據先前舉出之數值例,周長DMx與距離Ds之差分為1.073mm,可容易地將奇數之投影模組PL1001、PL1003、PL1005之各個所含之第2偏向構件1057之第4反射面p1009之位置沿光軸AX1004往第2凹面鏡1059側平行移動1mm程度來配置。 Specifically, the fourth reflecting surface p1009 of the
然而,若如此配置,關於第2偏向構件1057之構成(第4反射面p1009之配置)有時必須有與偶數之投影模組PL1002、PL1004、PL1006不同之零件。 However, with this arrangement, the configuration of the second deflection member 1057 (arrangement of the fourth reflective surface p1009) may sometimes have parts different from the even-numbered projection modules PL1002, PL1004, and PL1006.
因此,只要將搭載於所有投影模組PL1001~PL1006之第2偏向構件1057之第4反射面p1009之位置沿光軸AX1004往第2凹面鏡1059側平行移動上述1mm之一半之0.5mm程度,即可謀求零件之共通化。 Therefore, as long as the position of the fourth reflective surface p1009 of the
圖10係顯示圖9說明之沿光罩M之圖案面(第1面p1001)之周長DMx與奇數與偶數之照明區域中心間之直線距離Ds之差分與角度α之相關之圖表,綜軸表示差分,橫軸表示孔徑角α。又,圖10之圖表中之複數曲線,係表示將光罩M之圖案面(圓筒面狀之第1面p1001)之半徑r改變為180mm、210mm、240mm、300mm之情形。如先前舉出數值例所說明般,角度α為30°、半徑r為180mm之情形,周長DMx為約94.248mm,距離Ds為約93.175mm,因此圖10之圖表之縱軸所示之差分為約1.073mm。 10 is a graph showing the correlation between the difference between the linear distance Ds between the circumference DMx of the pattern surface (first surface p1001) of the reticle M (the first surface p1001) and the odd-numbered and even-numbered illumination areas and the angle α illustrated in FIG. Represents the difference, and the horizontal axis represents the aperture angle α. In addition, the complex curve in the graph of FIG. 10 shows the case where the radius r of the pattern surface (the first surface p1001 of the cylindrical surface) of the mask M is changed to 180 mm, 210 mm, 240 mm, and 300 mm. As explained in the previous numerical example, when the angle α is 30° and the radius r is 180 mm, the perimeter DMx is about 94.248 mm, and the distance Ds is about 93.175 mm, so the difference shown on the vertical axis of the graph of FIG. 10 It is about 1.073mm.
如圖10所示,光罩M之圖案面(第1面p1001)上之周長DMx與照明區域IR1001之中心點至照明區域IR1002之中心點之直線距離Ds之差分量, 由於會依第1面p1001之半徑r與角度α而變化,因此只要根據圖10之圖表之關係設定第2偏向構件1057之第4反射面p1009之位置即可。 As shown in FIG. 10, the difference between the linear distance Ds between the perimeter DMx on the pattern surface (first surface p1001) of the reticle M and the center point of the illumination area IR1001 to the center point of the illumination area IR1002 The radius r of the surface p1001 changes with the angle α. Therefore, the position of the fourth reflection surface p1009 of the
此外,為了使基板P上之直線距離DMx與光罩M上之周長DMx實質上相等,由於即使將第2偏向構件1057之第4反射面p1009之X方向位置配置成最佳,最終仍難以在超微米等級下一致,因此數μm~數十μm以下之剩餘差分,能藉由利用先前圖6中所示之像移修正光學構件1045來使投影像於X方向微幅位移,而能以充分之精度使直線距離DMx與周長DMx一致。 In addition, in order to make the linear distance DMx on the substrate P and the perimeter DMx on the mask M substantially equal, even if the X-direction position of the fourth reflecting surface p1009 of the
如上述,利用像移修正光學構件1045來使投影像於X方向微幅位移,將各投影區域PA1001~PA1006調整成在光罩圖案面內之掃描曝光方向之兩物點之間隔距離(周長)與在該兩物點投影於基板P上時之各像點之掃描曝光方向之間隔距離(周長)在超微米等級下相等之方法,亦同樣地能在先前圖2~圖6之裝置構成、圖7之裝置構成中適用。 As described above, the image shift correction
其次,說明第4實施形態。圖11中,有時會對與上述各實施形態相同之構成要件賦予與上述各實施形態相同之符號,簡化或省略其說明。 Next, the fourth embodiment will be described. In FIG. 11, the same constituent elements as those in the above-mentioned embodiments may be given the same symbols as in the above-mentioned embodiments, and the description thereof may be simplified or omitted.
圖11係顯示本實施形態之作為基板處理裝置1011之曝光裝置EX構成之圖。本實施形態中,基板P之搬送裝置1009之構成與先前圖2所示之搬送裝置1009之構成相同。圖11所示之基板處理裝置1011之構成與先前圖2、圖7、圖8之各裝置構成之差異點在於,光罩M並非為旋轉圓筒光罩而為通常之透射型平面光罩、設於投影光學系PL之各投影模組PL1001~PL1006內之第1偏向構件1050之第1反射面p1004相對光軸AX1003(面p1006)之角度θ 1001設定為45°等。 FIG. 11 is a diagram showing the configuration of the exposure apparatus EX as the
圖11中,光罩保持裝置1012具備保持平面狀之光罩M之光罩載台1078、以及使光罩載台1078在與中心面p1003正交之面內沿X方向掃描移 動之移動裝置(圖示略)。 In FIG. 11, the
由於圖11之光罩M之圖案面係實質上與XY面平行之平面,因此投影模組PL1001~PL1006之光罩M側之各主光線EL3與XY面成垂直,照明光罩M上之各照明區域IR1001~IR1006之照明模組IL1001~IL1006之光軸(主光線)亦相對XY面成垂直。 Since the pattern surface of the mask M in FIG. 11 is a plane substantially parallel to the XY plane, each principal ray EL3 on the mask M side of the projection modules PL1001 to PL1006 is perpendicular to the XY plane and illuminates each on the mask M The optical axes (primary rays) of the illumination modules IL1001~IL1006 of the illumination areas IR1001~IR1006 are also perpendicular to the XY plane.
本實施形態中,投影模組PL1001~PL1006之第1光學系1041所包含之第1偏向構件1050之第1反射面p1004與第2反射面p1005配置成從第1光學系1041射出之成像光束EL2之主光線EL3實質上與中心面p1003平行。亦即,投影模組PL1001~PL1006之各個所包含之第1偏向構件1050及第2偏向構件1057,係將成像光束EL2偏向成從光罩M上之各照明區域IR1001~IR1006往法線方向行進之主光線EL3從法線方向射入沿圓筒面之基板P上所形成之各投影區域PA1001~PA1006。 In this embodiment, the first reflection surface p1004 and the second reflection surface p1005 of the
為此,第1偏向構件1050之第1反射面p1004與第2反射面p1005配置成正交,第1反射面p1004與第2反射面p1005均設定成相對第1光軸AX1003(XY面)實質上成45°。 For this reason, the first reflection surface p1004 and the second reflection surface p1005 of the
又,第2偏向構件1057之第3反射面p1008配置成相對包含第2光軸AX1004且正交於中心面p1003之面(與XY面平行)與第4反射面p1009為非面對稱。又,第3反射面p1008與第2光軸AX1004所構成之角度θ 1003實質上為45°,第4反射面p1009與第2光軸AX1004所構成之角度θ 1004實質上為45°未滿,關於其角度θ 1004之設定,如先前圖6所說明者。 In addition, the third reflective surface p1008 of the
再者,本實施形態亦與先前圖9同樣地,在XZ面內觀看時,光罩M(第1面p1001)上之照明區域IR1001(及IR1003,IR1005)之中心點至照明區域IR1002(及IR1004,IR1006)之中心點之距離,設定為與圓筒面狀之基板P上之投影區域PA1001(及PA1003,PA1005)之中心點至第2投影區域PA1002(及PA1004,PA1006)之中心點之沿第2面p1002之沿圓筒面狀之第2面p1002之 長度(周長)實質上相等。 Furthermore, in this embodiment, similar to the previous FIG. 9, when viewed in the XZ plane, the center point of the illumination area IR1001 (and IR1003, IR1005) on the mask M (first surface p1001) to the illumination area IR1002 (and The distance between the center point of IR1004 and IR1006) is set from the center point of the projection area PA1001 (and PA1003, PA1005) on the cylindrical substrate P to the center point of the second projection area PA1002 (and PA1004, PA1006) The length (perimeter) of the second surface p1002 along the cylindrical surface along the second surface p1002 is substantially equal.
圖11所示之基板處理裝置1011亦同樣地,由先前圖2所示之控制裝置1014控制光罩保持裝置1012之移動裝置(掃描曝光用之線性馬達或微動用之致動器等),與第2捲筒構件1022之旋轉同步地驅動光罩載台1078。圖11所示之基板處理裝置1011,在以光罩M之往+X方向之同步移動進行掃描曝光後,必須有使光罩M返回-X方向之初期位置之動作(捲回)。因此在使第2捲筒構件1022以一定速度連續旋轉而將基板P以等速連續移送時,在光罩M之捲回動作之期間,不對基板P上進行圖案曝光,而會在基板P之搬送方向分散地(分離)形成面板用圖案。然而,於實用上,由於掃描曝光時之基板P之速度(此處為周速)與光罩M之速度係假定為50~100mm/s,因此在光罩M之捲回時只要將光罩載台1078以例如500mm/s之最高速驅動,則能縮小形成於基板P上之面板用圖案間在基板搬送方向之空白。 Similarly to the
其次,說明第5實施形態。圖12中,有時會對與上述各實施形態相同之構成要件賦予與上述各實施形態相同之符號,簡化或省略其說明。 Next, the fifth embodiment will be described. In FIG. 12, the same constituent elements as those in the above-mentioned embodiments may be given the same symbols as in the above-mentioned embodiments, and the description thereof may be simplified or omitted.
圖12之光罩M雖使用與先前之圖2、圖7、圖8相同之圓筒狀之光罩M,但其係構成為在對照明光為高反射部分與低反射(光吸收)部分作成有圖案之反射型光罩。因此,無法利用如先前各實施態樣之透射型之照明裝置1013(照明光學系IL),必須有如從各投影模組PL1001~PL1006側往反射型光罩M投射照明光之落斜照明系之構成。 Although the mask M of FIG. 12 uses the same cylindrical mask M as in the previous FIGS. 2, 7, and 8, it is constructed so as to have a high reflection portion and a low reflection (light absorption) portion for illumination light Reflective mask with pattern. Therefore, the transmissive illumination device 1013 (illumination optics IL) as in the previous embodiments cannot be used, and it is necessary to have the oblique illumination system that projects illumination light from the projection modules PL1001~PL1006 side to the reflective mask M constitute.
圖12中,於構成第1光學系1041之第1偏向構件1050之第1反射面p1004與反射型之光罩M之間,設置偏光分束器PBS與1/4波長板PK。在先前圖6所示之各投影模組之構成中,雖於該位置設有聚焦修正光學構件1044與像移修正光學構件1045,但本實施態樣中,聚焦修正光學構件1044、像移修正光學構件1045移至中間像面p1007(視野光闌1043)之前方或 後方之空間。 In FIG. 12, between the first reflection surface p1004 of the
偏光分束器PBS之波面分割面,依第1偏向構件1050之第1反射面p1004相對光軸AX1003(面p6)之角度θ 1001(<45°),配置成相對中心面p1003傾斜角度α/2(θd)而相對從反射型之光罩M上之照明區域IR1001往徑方向(法線方向)行進之主光線EL3為約45°。 The wavefront dividing surface of the polarizing beam splitter PBS is arranged at an angle of inclination α/1 relative to the central surface p1003 according to the angle θ 1001 (<45°) of the first reflection surface p1004 of the
照明光束EL1例如從偏光特性佳之雷射光源射出,透過光束整形光學系或照度均一化光學系(複眼透鏡或棒狀元件等)等成為直線偏光(S偏光)射入偏光分束器PBS。在偏光分束器PBS之波面分割面反射照明光束EL1之大部分,照明光束EL1通過1/4波長板PK被轉換為圓偏光,將反射型光罩M上之照明區域IR1001照射成梯形或長方形。 The illumination light beam EL1 is emitted from, for example, a laser light source with excellent polarization characteristics, and is transmitted into a polarized beam splitter PBS as linearly polarized light (S-polarized light) through a beam shaping optical system or an illumination uniformity optical system (a compound eye lens or a rod-shaped element). Most of the illumination light beam EL1 is reflected on the wavefront dividing surface of the polarizing beam splitter PBS, and the illumination light beam EL1 is converted into circularly polarized light by the 1/4 wavelength plate PK, illuminating the illumination area IR1001 on the reflective mask M into a trapezoid or rectangle .
在光罩M之圖案面(第1面p1001)反射之光(成像光束),再度通過1/4波長板PK被轉換為直線偏光(P偏光),大部分透射過偏光分束器PBS之波面分割面,射向第1偏向構件1050之第1反射面p1004。該第1反射面p1004以後之構成或成像光束(主光線EL3)之光路與以先前圖6所說明者相同,在反射型光罩M上之照明區域IR1001內出現之反射部所形成之圖案之像被投影於投影區域PA1001內。 The light (imaging beam) reflected on the pattern surface (first surface p1001) of the photomask M is converted into linearly polarized light (P-polarized light) again by the 1/4 wavelength plate PK, and most of it is transmitted through the wave surface of the polarizing beam splitter PBS The dividing surface is directed toward the first reflecting surface p1004 of the
如以上所述,本實施態樣中,僅於投影模組PL1001(及PL1002~PL1006)之第1光學系1041追加偏光分束器PBS與1/4波長板PK,即使係反射型之圓筒狀光罩,亦能簡單地實現落斜照明系。又,照明光束EL1構成為從相對在反射型光罩M反射之成像光束之主光線EL3方向為交叉之方向射入偏光分束器PBS,並射向反射型光罩M。因此,即使在多少有較小之偏光分束器PBS之P偏光與S偏光之消光比(分離特性)之情形,亦可避免成為雜光使照明光束EL1之一部分從偏光分束器PBS之波面分割面直接射向第1偏向構件1050之第1反射面p1004、基板P之投影區域PA1001,能良好地保持投影曝光於基板P上之像之質(對比等),進行光罩圖案之忠實轉印。 As described above, in this embodiment, only the first
圖13係顯示第6實施形態之投影光學系PL(第1投影模組PL1001)構成之圖。第1投影模組PL1001具備第3偏向構件(平面鏡)1120、第1透鏡群(等倍投影)1051、配置於瞳面之第1凹面鏡1052、第4偏向構件(平面鏡)1121、以及第5光學系(放大投影系)1122。配置照明區域IR(第1照明區域IR1001)之第1面p1001,係保持於圓筒面狀之第1捲筒構件1021之光罩M(透射型或反射型)之圖案面,為圓筒面。又,配置投影區域PA(第1投影區域PA1001)之基板P上之第2面p1002,在此處為平面。 13 is a diagram showing the configuration of a projection optical system PL (first projection module PL1001) of the sixth embodiment. The first projection module PL1001 includes a third deflection member (plane mirror) 1120, a first lens group (equal-magnification projection) 1051, a first
此外,保持於第1捲筒構件1021(光罩支承構件)之光罩M,當為如先前之圖12之反射型之情形,於光罩M與第3偏向構件1120之間設有偏光分束器與1/4波長板。 In addition, the mask M held by the first reel member 1021 (mask support member), as in the case of the reflection type shown in FIG. 12 previously, is provided with a polarizing component between the mask M and the
圖13中,從第1照明區域IR1001射出之成像光束EL2,在第3偏向構件1120之第5反射面p1017反射,射入第1透鏡群1051。射入第1透鏡群1051之成像光束EL2,在第1凹面鏡1052反射而被折返從第1透鏡群1051射出,射入第4偏向構件1121之第6反射面p1018。藉由第1透鏡群1051及第1凹面鏡1052,與上述實施形態同樣地以等倍形成出現於第1照明區域IR1001之光罩M之圖案之中間像。 In FIG. 13, the imaging light beam EL2 emitted from the first illumination region IR1001 is reflected on the fifth reflection surface p1017 of the
在第6反射面p1018反射之成像光束EL2,通過中間像之形成位置而射入第5光學系1122,通過第5光學系1122到達第1投影區域PA1001。第5光學系1122係將藉由第1透鏡群1051及第1凹面鏡1052形成之中間像以既定放大倍率(例如2倍以上)再成像於第1投影區域PA1001。 The imaging light beam EL2 reflected on the sixth reflection surface p1018 enters the fifth
圖13中,第3偏向構件1120之第5反射面p1017,相當於在圖6說明之第1偏向構件1050之第1反射面p1004,第4偏向構件1121之第6反射面p1018,相當於在圖6說明之第1偏向構件1050之第2反射面p1005。 In FIG. 13, the fifth reflecting surface p1017 of the
在圖13所示之投影光學系,第3偏向構件1120與光罩M(圓筒面狀之 第1面p1001)之間之主光線EL3之延長線設定成通過光罩M之旋轉中心線AX1001,具有與被平面支承之基板P之表面(第2面p1002)垂直之光軸AX1008之第5光學系1122與基板P上之投影區域PA1001間之成像光束EL2之主光線EL3被設定成與第2面p1002垂直、亦即滿足遠心之成像條件。為了維持此種條件,圖13之投影光學系,具備使第3偏向構件1120或第4偏向構件1121在圖13中之XZ面內微幅旋轉之調整機構。 In the projection optical system shown in FIG. 13, the extension line of the principal ray EL3 between the
此外,第3偏向構件1120或第4偏向構件1121除了能在圖13中之YZ面內微幅旋轉以外,亦可構成為能往X軸方向或Z軸方向微幅移動、繞與Z軸平行之軸微幅旋轉。此情形下,能使被投影至投影區域PA1001內之像微幅位移於X方向或在XY面內微幅旋轉。 In addition, the
此外,投影模組PL1001整體雖為放大投影光學系,但亦可整體為等倍投影光學系,亦可為縮小投影光學系。此情形下,由於由第1透鏡群1051與第1凹面鏡1052構成之第1光學系為等倍系,因此只要將其後段之第5光學系1122之投影倍率改變為等倍或縮小即可。 In addition, although the entire projection module PL1001 is an enlarged projection optical system, it may also be an equal-magnification projection optical system or a reduced projection optical system. In this case, since the first optical system composed of the
圖14係顯示從Y軸方向觀看利用第6實施形態之投影光學系之變形例構成之圖,圖15係從X軸方向觀看圖14之構成之圖。圖14、圖15所示之投影光學系,係顯示將圖13之放大投影光學系於Y軸方向亦即圓筒面狀之光罩M之旋轉中心線AX1001之軸方向配置複數個而成為複數化之情形之變形例。 FIG. 14 is a diagram showing the configuration of a modification of the projection optical system according to the sixth embodiment viewed from the Y-axis direction, and FIG. 15 is a diagram showing the configuration of FIG. 14 viewed from the X-axis direction. The projection optics shown in FIGS. 14 and 15 show that the enlarged projection optics of FIG. 13 are arranged in the Y-axis direction, that is, in the axial direction of the rotation center line AX1001 of the cylindrical mask M to form a plural number Variations of the situation.
本變形例之投影光學系PL,如圖15所示,具備第1投影模組PL1001及第2投影模組PL1002。第2投影模組PL1002係與第1投影模組PL1001相同之構成,如圖14所示,雖相對中心面p1003配置成與第1投影模組PL1001對稱,但於圖14中之Y軸方向,如圖15所示係彼此分離。 As shown in FIG. 15, the projection optical system PL of this modification includes a first projection module PL1001 and a second projection module PL1002. The second projection module PL1002 has the same structure as the first projection module PL1001. As shown in FIG. 14, although it is arranged symmetrically with respect to the central plane p1003 and the first projection module PL1001, in the Y-axis direction in FIG. 14, As shown in Fig. 15, the systems are separated from each other.
第1投影模組PL1001,如圖14所示,具備接收來自光罩M上之照明 區域IR1001之成像光束之第3偏向構件1120A、第1透鏡群1051A、第1凹面鏡1052A、第4偏向構件1121A、以及第5光學系(放大成像系)1122A。 The first projection module PL1001 includes a
圖14、圖15所示之投影模組PL1001,與先前之各投影光學系(圖6或圖13)相較,改變了光罩M與第3偏向構件1120A間之主光線之傾斜方向。亦即,圖6之第1偏向構件1050之反射面p1004或圖13之第3偏向構件1120之反射面,係使來自光罩M之照明區域IR1001之主光線EL3以鈍角(90°以上)偏向成與以第1透鏡群1051(1051A)與第1凹面鏡1052(1052A)構成之第1光學系之光軸AX1003成平行,相較於此,圖14之構成中,係以鈍角(90°未滿)偏向成來自照明區域IR1001之主光線EL3與第1光學系之光軸成平行。 The projection module PL1001 shown in FIGS. 14 and 15 changes the tilt direction of the chief ray between the mask M and the
第2投影模組PL1002,同樣地如圖14所示,具備接收來自光罩M上之照明區域IR1002之成像光束之第3偏向構件1120B、第1透鏡群1051B、第1凹面鏡1052B、第4偏向構件1121B、以及第5光學系(放大成像系)1122B。 As shown in FIG. 14, the second projection module PL1002 also includes a
圖14、圖15所示之投影模組PL1001,PL1002,整體為放大投影光學系,如圖15所示,配置第1照明區域IR1001之光罩M(第1捲筒構件1021)上之第1區域A1001與配置第2照明區域IR1002之光罩M(第1捲筒構件1021)上之第2區域A1002係在Y方向彼此分離。然而,藉由將投影模組PL1001,PL1002之放大倍率適切地決定,來將投影於基板P上之投影區域PA1001之第1區域A1001之第3區域A1005(像區域)與投影於基板P上之投影區域PA1002之第2區域A1002之第4區域A1006(像區域)設定為在YZ面內觀看時於Y方向一部分重疊之關係。藉此,光罩M(第1捲筒構件1021)上之第1區域A1001與第2區域A1002,在基板P上連結於Y方向而形成,而能投影曝光大面板用圖案。 The projection modules PL1001 and PL1002 shown in FIGS. 14 and 15 are enlarged projection optical systems as a whole. As shown in FIG. 15, the first mask region M1 (first reel member 1021) on the first illumination region IR1001 is arranged. The area A1001 and the second area A1002 on the mask M (first reel member 1021) on which the second illumination area IR1002 is arranged are separated from each other in the Y direction. However, by appropriately determining the magnifications of the projection modules PL1001 and PL1002, the third area A1005 (image area) of the first area A1001 of the projection area PA1001 projected on the substrate P and the projection area of the substrate P The fourth area A1006 (image area) of the second area A1002 of the projection area PA1002 is set so as to partially overlap in the Y direction when viewed in the YZ plane. Thereby, the first area A1001 and the second area A1002 on the reticle M (first reel member 1021) are formed on the substrate P connected to the Y direction, and the pattern for large exposure panels can be projected.
如以上所述,具備圖14、圖15所示之投影光學系PL之基板處理裝置,將以先前圖13所示之投影光學系相對中心面p1003配置成對稱,而與於Y 軸方向配置複數個之情形相較,能使投影光學系整體之X方向寬度尺寸較小,作為處理裝置亦能使X方向尺寸較小。 As described above, the substrate processing apparatus provided with the projection optical system PL shown in FIGS. 14 and 15 is arranged symmetrically with respect to the central plane p1003 with the projection optical system shown in FIG. 13 above, and is arranged in plural in the Y-axis direction Compared with this situation, the overall width of the projection optics in the X direction can be made smaller, and as a processing device, the size in the X direction can also be made smaller.
此外,在先前之圖9亦有說明,在XZ面內觀看之圖14中,規定於光罩M(第1捲筒構件1021)上之照明區域IR1001與照明區域IR1002之各中心點間之周長DMx與基板P上之對應之投影區域PA1001、PA1002之各中心點之距離DFx,在將投影光學系之放大倍率設為Mp時,係設定為DFx=Mp‧DMx之關係。 In addition, as previously described in FIG. 9, in FIG. 14 viewed in the XZ plane, the circumference between the center points of the illumination area IR1001 and the illumination area IR1002 defined on the reticle M (first reel member 1021) is defined. The distance DFx between the long DMx and the center points of the corresponding projection areas PA1001 and PA1002 on the substrate P is set to the relationship of DFx=Mp‧DMx when the magnification of the projection optical system is set to Mp.
圖16係顯示第7實施態樣之投影光學系構成之圖。來自形成於圓筒狀之第1面p1001(光罩圖案面)之第1照明區域IR1001之成像光束EL2係射入第6光學系1131,通過第6光學系1131而在第7偏向構件(平面鏡)1132之第9反射面p1022反射之成像光束EL2,到達配置第1視野光闌1043之中間像面p1007,於此中間像面p1007形成光罩M之圖案之像。 16 is a diagram showing the configuration of a projection optical system according to a seventh embodiment. The imaging light beam EL2 from the first illumination region IR1001 formed on the cylindrical first surface p1001 (mask pattern surface) enters the sixth
通過中間像面p1007之成像光束EL2在第8偏向構件(平面鏡)1133之第10反射面p1023反射,通過第7光學系1134到達沿圓筒狀之第2面p1002被支承之基板P上之第1投影區域PA1001。圖16之第1投影模組PL1001,係將在第1照明區域IR1001之光罩M之圖案之像作為正立像投影於第1投影區域PA1001。 The imaging light beam EL2 passing through the intermediate image plane p1007 is reflected on the tenth reflection surface p1023 of the eighth deflection member (planar mirror) 1133, passes through the seventh
圖16中,第6光學系1131係等倍之成像光學系,其光軸AX1010與通過第1照明區域IR1001中心之成像光束EL2之主光線實質上同軸。換言之,光軸AX1010係與圖4或圖7~9所示之第1徑方向D1001實質上平行。 In FIG. 16, the sixth
第7光學系1134係等倍之成像光學系,將第6光學系1131所形成之中間像再成像於第1投影區域PA1001。第7光學系1134之光軸AX1011與通過第1投影區域PA1001中心之圓筒狀之第2面p1002之第1法線方向(徑方向)D1003實質上平行。 The seventh
本實施形態中,兩個偏向構件1132、1133,係在圖16中之XZ面中隔著中間像面p1007配置成對稱。為了說明簡便,亦考量於第6光學系1131之光軸AX1010與第7光學系1134之光軸AX1011交叉之位置形成中間像面,於該中間像面之位置配置具有與YZ面平行之反射面之一片平面鏡,而將光路彎折之情形。然而,當能以一片平面鏡來處理時,在圖16之XZ面內,第6光學系1131之光軸AX1010與第7光學系1134之光軸AX1011所構成之角度較90°大之情形,該以一片平面鏡與各光軸AX1010,AX1011所構成之角度成為45°未滿之銳角,成像特性並不大好。例如,若光軸AX1010、AX1011所構成之角度成為140°左右,一片平面鏡之反射面與各光軸AX1010、AX1011所構成之角度成為20°。因此,若如圖16所示使用兩片偏向構件(平面鏡)1132、1133將光路彎折,則可緩和此種問題。 In this embodiment, the two
此外,圖16之構成中,亦可將第6光學系1131作為放大倍率Mf之成像透鏡,將第7光學系1134作為縮小倍率1/Mf之成像透鏡,整體為等倍之投影系。相反地,亦可將第6光學系1131作為縮小倍率1/Mf之成像透鏡,將第7光學系1134作為放大倍率Mf之成像透鏡,整體為等倍之投影系。 In addition, in the configuration of FIG. 16, the sixth
圖17係顯示第8實施態樣之投影光學系PL(第1投影模組PL1001)構成之圖。基本之光學系之構成雖與先前圖16所示者相同,但相異點在於進一步追加了兩個偏向構件(平面鏡)1140、1143。 FIG. 17 is a diagram showing the configuration of the projection optical system PL (first projection module PL1001) of the eighth embodiment. Although the structure of the basic optical system is the same as that shown in FIG. 16, the difference is that two deflection members (planar mirrors) 1140 and 1143 are further added.
圖17中,相當於圖16中之成像光學系1131之第8光學系1135係以第3透鏡1139與第4透鏡1141構成,其光軸,設定為與從沿圓筒面狀之第1面p1001被支承之光罩M上之第1照明區域IR1001中心往法線方向射出之成像光束EL2之主光線實質上平行。於第3透鏡1139與第4透鏡1141之間形成第8光學系1135之瞳面,於該位置設有第11偏向構件(平面鏡)1140。 In FIG. 17, the eighth
從第1照明區域IR1001射出而通過第3透鏡1139之成像光束EL2,在第11偏向構件1140之第13反射面p1026以90°或接近其之角度被彎折,射入第4透鏡1141,在相當於圖16中之偏向構件1132之第9偏向構件(平面鏡)1136之第11反射面p1024反射,到達配置於中間像面p1007之視野光闌1043。藉此,第8光學系1135將出現於第1照明區域IR1001內之光罩M之圖案之像形成於中間像面p1007之位置。 The imaging light beam EL2 emitted from the first illumination region IR1001 and passing through the
此外,第8光學系1135係等倍之成像光學系,中間像面p1007構成為與中心面p1003正交。又,第3透鏡1139之光軸與從第1照明區域IR1001中心往法線方向(圓筒狀之第1面p1001之半徑方向)射出之成像光束EL2之主光線實質上同軸或平行。 In addition, in the eighth
圖17之第9光學系1138與第8光學系1135為相同構成,配置成相對包含第1視野光闌1043且與中心面p1003實質上正交之中間像面p1007與第8光學系1135成對稱。第8光學系1135之光軸(以下稱為第2光軸AX1004)與中心面p1003實質上正交。經由第8光學系1135與第9偏向構件1136而通過視野光闌1043之成像光束EL2,在第10偏向構件(平面鏡)1137之第12反射面p1025被反射,通過構成第9光學系1138之第5透鏡1142、配置於瞳位置之第12偏向構件1143、以及第6透鏡1144,到達沿圓筒狀之第2面p1002被支承之基板P上之第1投影區域PA1001。圖17之構成中,第6透鏡1144之光軸設定為與相對第1投影區域PA1001往法線方向(圓筒狀之第2面p1002之半徑方向)行進之成像光束EL2之主光線實質上同軸或平行。 The ninth
圖18係顯示第9實施態樣之投影光學系PL(第1投影模組PL1001)構成之圖。圖18之第1投影模組PL1001係所謂線上型之反折射型之投影光學系。第1投影模組PL1001具備以第4凹面鏡1146與第5凹面鏡1147之兩片構成之等倍之第10光學系1145、第1視野光闌1043(中間像面p1007)、以 及如圖13、14所示之第5光學系1122。 FIG. 18 is a diagram showing the configuration of the projection optical system PL (first projection module PL1001) of the ninth embodiment. The first projection module PL1001 in FIG. 18 is a so-called on-line type refraction type projection optical system. The first projection module PL1001 includes a tenth
第10光學系1145,將沿圓筒狀之第1面p1001被支承之光罩M上之第1照明區域IR1001內所出現之圖案之中間像形成於視野光闌1043之位置。本實施態樣中,第10光學系1145係等倍系之光學系。第4凹面鏡1146及第5凹面鏡1147之各個例如構成為旋轉橢圓面之一部分。此旋轉橢圓面,係藉由使橢圓繞橢圓之長軸(X軸方向)或短軸(Z軸方向)旋轉而形成之面。 The tenth
圖18之構成中,從第1照明區域IR1001中央往圓筒狀之第1面p1001之法線方向(徑方向)射出之成像光束EL2之主光線,被設定為在XZ面內觀看時射向第1面p1001(第1捲筒構件1021)之旋轉中心軸AX1001。亦即,從光罩M(第1面p1001)射往投影模組PL1001之第4凹面鏡1146之成像光束EL2之主光線相對中心面p1003在XZ面內傾斜。 In the configuration of FIG. 18, the chief ray of the imaging light beam EL2 emitted from the center of the first illumination region IR1001 toward the normal direction (radial direction) of the cylindrical first surface p1001 is set to be directed when viewed in the XZ plane The rotation center axis AX1001 of the first surface p1001 (first reel member 1021). That is, the chief ray of the imaging light beam EL2 incident on the fourth
第5光學系1122,係例如在圖13中所說明之折射形放大投影光學系,將藉由第10光學系1145形成於視野光闌1043之位置之中間像投影於沿平面狀之第2面p1002被支承之基板P上之第1投影區域PA1001。 The fifth
第10光學系1145之第4凹面鏡1146及第5凹面鏡1147,係將成像光束EL2偏向成從第1照明區域IR1001往法線方向射出之成像光束EL2通過第5光學系1122從法線方向射入第1投影區域PA1001。具備此種投影光學系PL之基板處理裝置,與上述實施形態所說明之基板處理裝置1011同樣地,能抑制曝光不良之產生,進行忠實之投影曝光。此外,第5光學系1122亦可係等倍之投影光學系,亦可係縮小係之光學系。 The fourth
圖19係顯示第10實施態樣之投影光學系PL(第1投影模組PL1001)構成之圖。圖19之第1投影模組PL1001,係不含具有功率之反射構件之折射系光學系。第1投影模組PL1001具備第11光學系1150、第13偏向構件1151、第1視野光闌1043、第14偏向構件1152、以及第12光學系1153。 FIG. 19 is a diagram showing the configuration of the projection optical system PL (first projection module PL1001) of the tenth embodiment. The first projection module PL1001 in FIG. 19 is a refractive optical system that does not include a reflective member with power. The first projection module PL1001 includes an eleventh
本實施形態中,從沿圓筒狀之第1面p1001被保持之光罩M上之第1照明區域IR1001射出之成像光束EL2,通過第11光學系1150被楔形狀之稜鏡構成之第13偏向構件1151在XZ面內偏向而到達配置於中間像面p1007之第1視野光闌1043,於此處形成光罩圖案之中間像。進而,通過第1視野光闌1043之成像光束EL2被楔形狀之稜鏡構成之第14偏向構件1152在XZ面內偏向而射入第12光學系1153,通過第12光學系1153,到達沿圓筒面狀之第2面p1002被支承之基板P上之第1投影區域PA1001。 In the present embodiment, the imaging light beam EL2 emitted from the first illumination region IR1001 on the mask M held along the cylindrical first surface p1001 is formed by the wedge-shaped prism through the eleventh
第11光學系1150之光軸例如與從第1照明區域IR1001中心往法線方向(圓筒面狀之第1面p1001之半徑方向)射出之成像光束EL2之主光線實質上同軸或平行。又,第12光學系1153與第11光學系1150為相同構成,配置成相對配置第1視野光闌1043之中間像面p1007(與中心面p1003正交)與第11光學系1150成對稱。第12光學系1153之光軸,設定成與沿平面狀之第2面p1002之法線射入第1投影區域PA1001之成像光束EL2之主光線實質上平行。 The optical axis of the eleventh
第13偏向構件1151具有通過第11光學系1150之成像光束EL2所射入之第9面p1028與射出從第9面p1028射入之成像光束之第10面p1029,配置於第1視野光闌1043(中間像面p1007)之前方或緊鄰之前方。本實施形態中,構成既定頂角之第9面p1028及第10面p1029之各個係以相對正交於中心面p1003之面(XY面)傾斜、延伸於Y軸方向之平面構成。 The thirteenth deflection member 1151 has a ninth surface p1028 that enters the imaging light beam EL2 of the eleventh
第14偏向構件1152係與第13偏向構件1151同樣之稜鏡構件,相對第1視野光闌1043所位於之中間像面p1007與第13偏向構件1151對稱配置。第14偏向構件1152具有通過第1視野光闌1043之成像光束EL2所射入之第11面p1030與射出從第11面p1030射入之成像光束EL2之第12面p1031,配置於第1視野光闌1043(中間像面p1007)之後方或緊鄰之後方。 The
本實施態樣中,第13偏向構件1151及第14偏向構件1152,係將從第 1照明區域IR1001往法線方向射出之成像光束EL2偏向成從法線方向射入第1投影區域PA1001。具備此種投影光學系PL之基板處理裝置,與上述實施形態所說明之基板處理裝置1011同樣地,能抑制曝光不良之產生,進行忠實之投影曝光。 In this embodiment, the 13th deflection member 1151 and the
此外,第11光學系1150或第12光學系1153雖亦可係等倍之投影光學系,亦可係縮小係之光學系,但在將光罩M或基板P之任一方沿圓筒面(或圓弧面)支承之狀態下投影曝光時,在圓筒面之周長方向分離之兩個投影模組之間,在物面側之視野間隔(周長距離)與在最終像面側之投影視野之間隔(周長距離)之比亦可設定為與投影倍率一致。 In addition, although the eleventh
圖20係顯示第11實施形態之元件製造系統(可撓性顯示器製造線)之一部分構成之圖。此處,係顯示從供應滾筒FR1拉出之可撓性基板P(片、膜等)依序經過n台處理裝置U1,U2,U3,U4,U5,...Un,而被捲至回收滾筒FR2之例。上位控制裝置2005,統籌控制構成製造線之各處理裝置U1~Un。 FIG. 20 is a diagram showing a part of the configuration of the component manufacturing system (flexible display manufacturing line) of the eleventh embodiment. Here, it is shown that the flexible substrates P (sheets, films, etc.) pulled out from the supply roller FR1 pass through n processing devices U1, U2, U3, U4, U5, ...Un sequentially, and are wound up for recycling Example of roller FR2. The higher-
圖20中,正交座標系XYZ,設定成基板P之表面(或背面)與XZ面垂直,與基板P之搬送方向(長度方向)正交之寬度方向設定為Y方向。此外,該基板P,亦可係預先藉由既定之前處理而將其表面改質並活性化者、或於表面形成有為了精密圖案化之微細分隔壁構造(凹凸構造)者。 In FIG. 20, the orthogonal coordinate system is XYZ, and the surface (or back surface) of the substrate P is set perpendicular to the XZ plane, and the width direction orthogonal to the transport direction (longitudinal direction) of the substrate P is set as the Y direction. In addition, the substrate P may be modified and activated by a predetermined pre-treatment in advance, or a fine partition wall structure (concavo-convex structure) for precise patterning may be formed on the surface.
被捲於供應滾筒FR1之基板P,係藉由被夾持之驅動滾筒DR1拉出而搬送至處理裝置U1,基板P之Y方向(寬度方向)之中心,藉由邊緣位置控制器EPC1伺服控制成相對目標位置在±十數μm~數十μm程度之範圍。 The substrate P wound on the supply roller FR1 is pulled out by the driven driving roller DR1 and transported to the processing device U1. The center of the substrate P in the Y direction (width direction) is controlled by the edge position controller EPC1 servo The relative target position is in the range of ± tens of μm to tens of μm.
處理裝置U1,係以印刷方式在基板P之搬送方向(長度方向)連續地或選擇性地於基板P之表面塗布感光性功能液(光阻、感光性矽烷耦合材、UV硬化樹脂液等)之塗布裝置。於處理裝置U1內,設有捲繞有基板P之壓胴滾筒DR2、包含在此壓胴滾筒DR2上將感光性功能液均一地塗布於基板P 之表面之塗布用滾筒等之塗布機構Gp1、用以急速地除去塗布於基板P之感光性功能液所含之溶劑或水分之乾燥機構Gp2等。 The processing device U1 is to apply a photosensitive functional liquid (photoresist, photosensitive silane coupling material, UV-curable resin liquid, etc.) to the surface of the substrate P continuously or selectively on the surface of the substrate P in the transport direction (longitudinal direction) by printing. Of the coating device. In the processing device U1, a coating mechanism Gp1 including a pressure roller DR2 around which the substrate P is wound, a coating roller that uniformly applies the photosensitive functional liquid on the surface of the substrate P on the pressure roller DR2, etc. A drying mechanism Gp2 etc. for rapidly removing the solvent or moisture contained in the photosensitive functional liquid applied to the substrate P.
處理裝置U2,係用以將從處理裝置U1搬送來之基板P加熱至既定溫度(例如數10~120℃程度)、使塗布於表面之感光性功能層穩定之加熱裝置。於處理裝置U2內,設有用以翻折搬送基板P之複數個滾筒與空氣旋轉桿、用以加熱搬入之基板P之加熱室部HA1、用以將加熱後之基板P之溫度下降至與後步驟(處理裝置U3)之環境溫度一致之冷卻室部HA2、被挾持之驅動滾筒DR3等。 The processing device U2 is a heating device for heating the substrate P transferred from the processing device U1 to a predetermined temperature (for example, about 10 to 120°C) to stabilize the photosensitive functional layer coated on the surface. In the processing device U2, a plurality of rollers and air rotating rods for folding and transporting the substrate P, a heating chamber portion HA1 for heating the transferred substrate P, and a temperature for reducing the temperature of the heated substrate P to and after The cooling chamber part HA2 with the same ambient temperature in the step (processing device U3), the driven roller DR3 being held, etc.
作為基板處理裝置之處理裝置U3,係對從處理裝置U2搬送來之基板P之感光性功能層照射與顯示器用之電路圖案或配線圖案對應之紫外線之圖案化光之曝光裝置。於處理裝置U3內,設有將基板P之Y方向(寬度方向)中心控制於一定位置之邊緣位置控制器EPC、被挾持之驅動滾筒DR4、將基板P以既定張力局部地捲繞並將基板P上之圖案曝光部分支承成均一之圓筒面狀之旋轉捲筒DR5、以及用以對基板P賦予既定鬆弛(空隙)DL之兩組驅動滾筒DR6、DR7等。 The processing device U3 as a substrate processing device is an exposure device that irradiates patterned light of ultraviolet rays corresponding to circuit patterns or wiring patterns for displays to the photosensitive functional layer of the substrate P transferred from the processing device U2. In the processing device U3, there is an edge position controller EPC that controls the center of the substrate P in the Y direction (width direction) to a certain position, the driven roller DR4 is held, the substrate P is partially wound with a predetermined tension and the substrate The pattern exposure portion on P supports a rotating drum DR5 with a uniform cylindrical surface, and two sets of drive rollers DR6, DR7, etc. for imparting a predetermined slack (gap) DL to the substrate P.
進而,於處理裝置U3內,設有圓筒狀之光罩M、於被旋轉捲筒DR5支承成圓筒面狀之基板P之一部分投影圓筒狀之光罩M之光罩圖案之一部分之像之投影光學系PL、為了將被投影之光罩圖案之一部分之像與基板P相對對齊(對準)而檢測出預先形成於基板P之對準標記等之對準顯微鏡AM1、AM2。 Furthermore, a cylindrical mask M is provided in the processing device U3, and a portion of the mask pattern of the cylindrical mask M is projected on a portion of the substrate P supported by the rotating drum DR5 in a cylindrical shape. The image projection optical system PL, alignment microscopes AM1 and AM2 that detect alignment marks and the like formed on the substrate P in advance to align (align) a part of the projected mask pattern with the substrate P (alignment).
本實施態樣中,由於係將圓筒狀之光罩M設為反射型(外周面之圖案係以高反射部與無反射部構成),因此亦設有透過投影光學系PL之一部分光學元件將曝光用照明光照射於圓筒狀之光罩M之落斜照明光學系。關於該落斜照明光學系之構成,詳細留待後述。 In this embodiment, since the cylindrical mask M is of a reflective type (the pattern of the outer peripheral surface is composed of a highly reflective portion and a non-reflective portion), a part of the optical element that transmits the projection optical system PL is also provided The oblique illumination optical system of the cylindrical mask M is irradiated with illumination light for exposure. The structure of this oblique illumination optical system will be described in detail later.
處理裝置U4係對從處理裝置U3搬送來之基板P之感光性功能層進行 濕式之顯影處理、無電解鍍敷處理等乾燥處理裝置。於處理裝置U4內設有於Z方向階層化之三個處理槽BT1、BT2、BT3、將基板P彎折搬送之複數個滾筒、以及被夾持之驅動滾筒DR8等。 The processing device U4 is a drying processing device that performs wet development processing, electroless plating processing, etc. on the photosensitive functional layer of the substrate P transferred from the processing device U3. The processing apparatus U4 is provided with three processing tanks BT1, BT2, BT3 hierarchized in the Z direction, a plurality of rollers for bending and conveying the substrate P, a driving roller DR8 sandwiched therebetween, and the like.
處理裝置U5雖係將從處理裝置U3搬送來之基板P暖化,並將在濕式製程潤濕之基板P之水分含有量調整至既定值之加熱乾燥裝置,惟其詳細構造省略。其後,經過幾個處理裝置,通過一連串製程之最後處理裝置Un後之基板P,透過被夾持之驅動滾筒DR1被捲至回收滾筒FR2。在此捲繞時,亦藉由邊緣位置控制器EPC2逐次修正控制驅動滾筒DR1與回收滾筒FR2之Y方向相對位置使基板P之Y方向(寬度方向)之中心或Y方向之基板端於Y方向不會不均一。 Although the processing device U5 is a heating and drying device that warms the substrate P transferred from the processing device U3 and adjusts the moisture content of the substrate P wetted in the wet process to a predetermined value, its detailed structure is omitted. After that, after passing through several processing devices, the substrate P after passing through the last processing device Un in a series of processes is wound up to the recovery roller FR2 through the driven driving roller DR1. During the winding, the relative position in the Y direction of the driving roller DR1 and the recovery roller FR2 is also corrected by the edge position controller EPC2 to make the center of the substrate P in the Y direction (width direction) or the substrate end in the Y direction in the Y direction. Not uneven.
本實施形態所使用之基板P,能使用與以第1實施形態所例示者相同,此處省略說明。 The substrate P used in this embodiment can be the same as the one exemplified in the first embodiment, and the description is omitted here.
本實施形態之元件製造系統2001,係對基板P反覆執行用以製造一個元件之各種處理。被施加各種處理之基板P,係依各元件被分割(切割),成為複數個元件。基板P之尺寸,例如寬度方向(作為短邊之Y方向)之尺寸為10cm~2m程度,長度方向(作為長邊之X方向)之尺寸為10m以上。 The
其次,雖說明本實施形態之處理裝置U3(曝光裝置)之構成,但在此之前,參照圖21~圖23說明本實施形態之曝光裝置之基本構成。 Next, although the configuration of the processing device U3 (exposure device) of this embodiment will be described, before that, the basic configuration of the exposure device of this embodiment will be described with reference to FIGS. 21 to 23.
圖21所示之曝光裝置U3係所謂掃描曝光裝置,具備從旋轉中心軸AX2001起具有半徑r2001之圓周面之反射型圓筒狀之光罩M與從旋轉中心軸AX2002起具有半徑r2002之圓周面之旋轉捲筒2030(圖1中之DR5)。接著,藉由使圓筒狀之光罩M與旋轉捲筒2030以既定旋轉速度比同步旋轉,圓筒狀之光罩M之外周所形成之圖案之像,即被連續地反覆投影曝光至捲繞於旋轉捲筒2030之外周面一部分之基板P之表面(沿圓筒面彎曲之面)。 The exposure apparatus U3 shown in FIG. 21 is a so-called scanning exposure apparatus, and includes a reflective cylindrical mask M having a circumferential surface with a radius r2001 from the rotation center axis AX2001 and a circumferential surface with a radius r2002 from the rotation center axis AX2002 The rotating reel 2030 (DR5 in Figure 1). Then, by rotating the cylindrical mask M and the
於該曝光裝置U3設有搬送機構2009、光罩保持裝置2012、照明光學 系IL、投影光學系PL、以及控制裝置2013,藉由控制裝置2013控制保持於光罩保持裝置2012之圓筒狀之光罩M之旋轉驅動或旋轉中心軸AX2001方向之微動、或者構成將基板P之搬送於長度方向之搬送機構2009一部分之旋轉捲筒2030之旋轉驅動或旋轉中心軸AX2002方向之微動。 The exposure device U3 is provided with a conveying
光罩保持裝置2012具備:滾筒、齒輪、皮帶等驅動傳達機構2021、2022,係對於外周面形成有反射型之光罩M(光罩圖案)之旋轉捲筒2020賦予繞旋轉中心軸AX2001之旋轉驅動力或使旋轉捲筒2020微動於與Y軸平行之旋轉中心軸AX2001之方向;以及第1驅動部2024,包含用以對此等驅動傳達機構2021、2022賦予必要驅動力之旋轉馬達、微動用之線性馬達或壓電元件等。又,旋轉捲筒2020(光罩M)之旋轉角度位置或旋轉中心軸AX2001方向之位置,係藉由包含旋轉編碼器、雷射干涉儀、間隙感測器等之第1檢測器2023來測量,其測量資訊被即時送至控制裝置2013,使用於第1驅動部2024之控制。 The
同樣地,旋轉捲筒2030,係藉由包含旋轉馬達、微動用之線性馬達或壓電元件等之第2驅動部2032被賦予繞與Y軸平行之旋轉中心軸AX2002之旋轉驅動力或往旋轉中心軸AX2002方向之微動力。旋轉捲筒2030之旋轉角度位置或旋轉中心軸AX2002方向之位置,係藉由包含旋轉編碼器、雷射干涉儀、間隙感測器等之第2檢測器2031來測量,其測量資訊被即時送至控制裝置2013,使用於第2驅動部2032之控制。 Similarly, the rotating
此處,本實施態樣中,圓筒狀之光罩M之旋轉中心軸AX2001與旋轉捲筒2030之旋轉中心軸AX2002相互平行,位於與YZ面平行之中心面pc內。 Here, in this embodiment, the central axis of rotation AX2001 of the cylindrical mask M and the central axis of rotation AX2002 of the
接著,於形成有圓筒狀之光罩M之圓筒狀之圖案面p2001上與中心面pc相交之部分設定有曝光用照明光之照明區域IR,於沿旋轉捲筒2030之外周面p2002捲繞成圓筒狀之基板P上之與中心面pc相交之部分設定有用以 投影出現於照明區域IR內之光罩圖案一部分之像之投影區域PA。 Next, on the cylindrical pattern surface p2001 on which the cylindrical mask M is formed, the illumination area IR of the exposure illumination light is set on the portion that intersects the central plane pc, and is rolled around the outer circumferential surface p2002 along the
本實施態樣中,投影光學系PL往圓筒狀之光罩M上之照明區域IR射出照明光束EL1,且以射入在照明區域IR內之光罩圖案反射繞射之光束(成像光束)EL2、於基板P上之投影區域PA成像出圖案之像之方式,照明光學系IL以共用投影光學系PL之一部分光路之落斜方式構成。 In this embodiment, the projection optics PL emits the illumination beam EL1 to the illumination area IR on the cylindrical mask M, and the diffracted beam (imaging beam) is reflected by the mask pattern entering the illumination area IR EL2. In the projection area PA on the substrate P, a pattern image is formed, and the illumination optical system IL is formed by a slanting method of sharing a part of the optical path of the projection optical system PL.
如圖21所示,投影光學系PL具備:相對中心面pc在XZ面內傾斜45°且具備彼此正交之反射平面2041a、2041b之稜鏡反射鏡2041、以及具有與中心面pc正交之光軸2015a且以配置於瞳面pd之凹面鏡2040與複數片透鏡構成之第2光學系2015。 As shown in FIG. 21, the projection optical system PL includes: a
此處,若將包含光軸2015a且與XY面平行之平面設為p2005,則以該平面p2005為基準之反射平面2041a之角度θ 2001為+45°,以該平面p2005為基準之反射平面2041b之角度θ 2002為-45°。 Here, if the plane including the optical axis 2015a and parallel to the XY plane is set as p2005, the angle θ 2001 of the
投影光學系PL例如係作為將圓形影像視野以稜鏡反射鏡2041上下之反射平面2041a、2041b分割之半影像視野類型之反折射型投影光學系(戴森光學系之變形類型)而構成為遠心。因此,在照明區域IR內之圖案反射、折射之成像光束EL2,係在稜鏡反射鏡2041上側之反射平面2041a反射,通過複數片透鏡到達配置於瞳面pd之凹面鏡2040(亦可係平面鏡)。接著,在凹面鏡2040反射之成像光束EL2通過相對平面p2005為對稱之光路而到達稜鏡反射鏡2041之反射平面2041b,在該處被反射而到達基板P上之投影區域PA,光罩圖案之像被以等倍(×1)成像於基板P上。 The projection optical system PL is, for example, a semi-image field of view type refraction type projection optical system (a deformation type of Dyson optical system) which is a semi-image field of view divided by a circular image field by
為了對此種投影光學系PL適用落斜照明方式,本實施態樣中,構成為於配置於瞳面pd之凹面鏡2040之反射面p2004之一部分形成通過部分(窗),透過通過部分從面p2003(玻璃面)使照明光束EL1射入。 In order to apply the oblique illumination method to this type of projection optical system PL, in this embodiment, it is configured that a part of the reflection surface p2004 of the
圖21中,僅表示本實施形態之照明光學系IL中配置於凹面鏡2040背後之第1光學系2014之一部分,僅顯示來自後述之光源、複眼透鏡、照明 視野光闌等之照明光中生成於瞳面pd之多數個點光源像之一個點光源像Sf之照明光束EL1。 In FIG. 21, only a part of the first
點光源像Sf,由於例如設定為與構成複眼透鏡之複數個透鏡元件之各射出側所形成之點光源像(光源之發光點)光學上共軛之關係,因此圓筒狀之光罩M上之照明區域IR,藉由透過投影光學系PL之第2光學系2015與稜鏡反射鏡2041上側之反射平面2041a之照明光束EL1,利用凱拉照明法被以均一照度分布照明。 The point light source image Sf is, for example, set to be optically conjugate to the point light source image (the light emitting point of the light source) formed on each exit side of the plurality of lens elements constituting the fly-eye lens, so the cylindrical mask M The illumination area IR is illuminated with a uniform illuminance distribution by the illumination light beam EL1 passing through the second
此外,圖21中,照明光學系IL之第1光學系2014之光軸2014a,配置成與投影光學系PL之光軸2015a同軸,圓筒狀之光罩M上之照明區域IR,設定成圓筒狀之圖案面p2001之周方向寬度狹窄,於旋轉中心軸AX2001之方向較長之狹縫狀。 In addition, in FIG. 21, the
例如,當將圓筒狀之光罩M之圖案面p2001之半徑r2001設為200mm,將基板P之厚度tf設為0.2mm,用以投影曝光之條件,能設定為旋轉捲筒2030之外周面之半徑r2002為r2002=r2001-tf(199.8mm)。 For example, when the radius r2001 of the pattern surface p2001 of the cylindrical mask M is set to 200 mm, and the thickness tf of the substrate P is set to 0.2 mm, the conditions for projection exposure can be set to the outer peripheral surface of the
又,雖照明區域IR(或投影區域PA)之周方向寬度(掃描曝光方向之寬度)越狹窄則越能忠實地投影曝光至微細之圖案,但與此成反比地需提高照明區域IR內之每單位面積之照度。要將照明區域IR(或投影區域PA)之寬度設定為何種程度,能藉由考量圓筒狀之光罩M或旋轉捲筒2030之半徑r2001,r2002、待轉印圖案之微細度(線寬等)、投影光學系PL之焦深等後再加以決定。 In addition, although the narrower the width of the illumination area IR (or the projection area PA) in the circumferential direction (the width of the scanning exposure direction), the more accurately the fine pattern can be projected, but inversely proportional to this, it is necessary to increase the Illumination per unit area. To set the width of the illumination area IR (or projection area PA), the radius r2001, r2002 of the cylindrical mask M or the
接著,圖21中,當將光軸2015a所通過之凹面鏡2040之反射面p2004上之位置作為中心點2044時,由於點光源像Sf會形成於從中心點2044在紙面(XZ面)內往-Z方向偏移之位置,因此在圓筒狀之光罩M上之照明區域IR反射之成像光束EL2(包含繞射光)中之正規反射光(0次繞射光),係收斂成於相對反射面p2004上之中心點2044為點對稱之位置形成點光源像 Sf’。因此,只要先將包含反射面p2004上之點光源像Sf’所位於之部分與其周圍之±1次繞射光所分布之部分之區域設為反射部,則來自照明區域IR之成像光束EL2即大致不損失地透過第2光學系2015之複數片透鏡與稜鏡反射鏡2041之反射平面2041b到達投影區域PA。 Next, in FIG. 21, when the position on the reflective surface p2004 of the
該凹面鏡2040,係於以透射性之光學玻璃材(石英等)作成之凹透鏡之凹面蒸鍍鋁等金屬性之反射膜而作成反射面p2004,通常,該反射膜之光透射率極小。因此,本實施形態中,為了從反射面p2004背側之面p2003使照明光束EL1射入,而藉由蝕刻等除去構成反射面p2004之反射膜一部分,形成已收斂之照明光束EL1能通過(透射過)之窗。 The
圖22係從X方向觀看此種凹面鏡2040之反射面p2004樣子之圖。圖22中,為了使說明簡單,係在反射面p2004上從包含光軸2015a之平面p2005(與XY面平行)往-Z方向偏移一定量之位置,於Y方向分離設有三個窗部2042a、2042b、2042c。此窗部2042a、2042b、2042c,係藉由選擇性之蝕刻除去構成反射面p2004之反射膜而作成者,此處,雖作成不遮蔽各點光源像Sfa,Sfb,Sfc(照明光束EL1a,EL1b,EL1c)程度之小矩形狀,但亦可係其他形狀(圓、橢圓、多角形等)。三個點光源像Sfa,Sfb,Sfc,例如係藉由設於照明光學系IL內之複眼透鏡之複數個透鏡元件中排列於Y方向之三個透鏡元件而作成者。 FIG. 22 is a view of the reflection surface p2004 of such a
在反射面p2004內觀看時,各窗部2042a、2042b、2042c相互之位置關係,設定為相對中心點2044(光軸2015a)為非為點對稱、亦即非點對稱之關係。此處雖僅顯示三個窗部,但製作更多窗部之情形,窗部彼此亦設定為相對中心點2044為非點對稱之位置關係。 When viewed in the reflective surface p2004, the positional relationship between the
又,來自生成於窗部2042a內之點光源像Sfa之照明光束EL1a成為大致平行光束而照射於圓筒狀之光罩M之照明區域IR後,其反射繞射光之成像光束EL2a則在凹面鏡2040之反射面p2004上於相對中心點2044與窗部 2042a為點對稱之位置收斂成點光源像Sfa’。 Furthermore, the illumination light beam EL1a from the point light source image Sfa generated in the
同樣地,雖來自生成於窗部2042b、2042c內之各點光源像Sfb,Sfc之照明光束EL1b,EL1c亦成為大致平行光束而照射於圓筒狀之光罩M之照明區域IR,但其反射光之成像光束EL2b,EL2c則在凹面鏡2040之反射面p2004上於相對中心點2044與窗部2042b,2042c之各個為點對稱之位置收斂成點光源像Sfb’,Sfc’。 Similarly, although the illumination beams EL1b and EL1c from the point light source images Sfb and Sfc generated in the
又,如圖22所示,於作為點光源像Sfa’,Sfb’,Sfc’之成像光束EL2a,EL2b,EL2c,雖包含0次繞射光(正反射光)與±1次繞射光,但各±1次繞射光DLa,DLb,DLc係隔著0次繞射光於Z軸方向與X軸方向擴展並分布。 Also, as shown in FIG. 22, the imaging light beams EL2a, EL2b, and EL2c that are point light sources like Sfa', Sfb', and Sfc' include 0th order diffracted light (normally reflected light) and ±1st order diffracted light, but each ±1st-order diffracted light DLa, DLb, DLc is spread and distributed in the Z-axis direction and X-axis direction through 0th-order diffracted light.
進而,形成於反射面p2004上之點光源像Sfa’,Sfb’,Sfc’(特別是0次繞射光),由於圓筒狀之光罩M之照明區域IR為圓筒面,因此在圖22之紙面(YZ面)內,係使點光源像Sfa,Sfb,Sfc之形狀成為拉伸於Z方向(圓筒光罩之周方向)之形狀而分布。 Furthermore, the point light sources formed on the reflective surface p2004 are like Sfa', Sfb', and Sfc' (especially 0-order diffracted light). Since the illumination area IR of the cylindrical mask M is a cylindrical surface, it is shown in Fig. 22 In the paper surface (YZ plane), the shape of the point light source images Sfa, Sfb, Sfc is distributed to be stretched in the Z direction (the circumferential direction of the cylindrical mask).
如圖22所示,在各點光源像Sfa,Sfb,Sfc位於較包含中心點2044(光軸2015a)之平面p2005更下側(-Z方向)時,在圖21所示之紙面內(XZ面內),照明光束EL1(EL1a,EL1b,EL1c)透過第2光學系2015與稜鏡反射鏡2041上側之反射平面2041a到達圓筒狀之光罩M。該等照明光束EL1(EL1a,EL1b,EL1c),雖在圓筒狀之光罩M之極近前方均為平行光束,但相對中心面pc些微傾斜。其傾斜量,對應於在反射面p2004內(瞳面pd)之點光源像Sf(Sfa,Sfb,Sfc)自中心點2044(光軸2015a)起之Z方向位移量。 As shown in FIG. 22, when each point light source image Sfa, Sfb, Sfc is located on the lower side (-Z direction) than the plane p2005 including the center point 2044 (optical axis 2015a), it is within the paper surface (XZ shown in FIG. 21) In-plane), the illumination beam EL1 (EL1a, EL1b, EL1c) passes through the second
在照明區域IR反射、折射之成像光束EL2(EL2a,EL2b,EL2c),在XZ面內相對中心面pc以與照明光束EL1(EL1a,EL1b,EL1c)對稱之傾斜到達稜鏡反射鏡2041上側之反射平面2041a,在此處反射而射入第2光學系2015,到達凹面鏡2040之反射面p2004之較平面p2005(中心點2044)上方之部分。 The imaging beam EL2 (EL2a, EL2b, EL2c) that is reflected and refracted in the illumination area IR reaches the upper side of the
以上之圖21、圖22所示之一例中,雖係在凹面鏡2040之反射面p2004 內,使照明光束EL1之點光源像(集光點)Sf分布於與包含投影光學系PL之光軸2015a之XY面平行之平面p2005下側(-Z方向),但只要係設定為先前說明之條件,亦即通過照明光束之點光源像之反射面p2004內之窗部2042相互之位置關係相對中心點2044為不是點對稱之關係(非點對稱之關係),則反射面p2004上之點光源像Sf(窗部2042)之位置能自由設定。 In the example shown in FIGS. 21 and 22 above, although it is in the reflection surface p2004 of the
若至少在此種條件下,將作為照明光束EL1源之多數個點光源像Sf所通過之窗部2042形成於凹面鏡2040之反射面p2004,則能在反射面p2004(瞳面pd)上,使照明光束與成像光束有效率地在空間上分離。 If at least under this condition, the
為了一邊使多數個窗部2042(照明光束之點光源像Sfa,Sfb,Sfc...)均一地分布於反射面p2004內,一邊良好地保持照明光束與成像光束之空間上之分離,可將藉由成像光束EL2之收斂而形成之各點光源像Sfa’,Sfb’,Sfc’...在反射面p2004上之大小(亦包含±1次繞射光DLa,DLb,DLc之大小)設定為較相鄰之窗部2042之Y方向與Z方向之間隔尺寸小即可。換言之,盡可能地縮小照明光束EL1之各點光源像Sfa,Sfb,Sfc...在瞳面pd(反射面p2004)內之尺寸,以盡可能地縮小窗部2042a、2042b、2042c...各個之尺寸,此方法係有效。 In order to uniformly distribute a large number of windows 2042 (point light sources of the illumination beam like Sfa, Sfb, Sfc...) in the reflection surface p2004, while maintaining a good spatial separation of the illumination beam and the imaging beam, the The size of each point light source image Sfa', Sfb', Sfc' formed by the convergence of the imaging beam EL2 on the reflecting surface p2004 (including the size of ±1 order diffracted light DLa, DLb, DLc) is set to The distance between the Y direction and the Z direction of the
本實施態樣中,作為光源,雖能利用水銀放電燈、鹵素燈、紫外LED等,但為了縮小照明光束EL1之各點光源像Sfa,Sfb,Sfc...,能利用高輝度且放射震盪波長帶狹窄之光之雷射光源。 In this embodiment, as the light source, mercury discharge lamps, halogen lamps, ultraviolet LEDs, etc. can be used, but in order to reduce the point light sources of the illumination beam EL1 like Sfa, Sfb, Sfc..., high brightness and radiation shock can be used Laser light source with narrow band of light.
此處,參照圖23說明圖21、圖22所示之照明光學系IL(第1光學系2014)之構成一例。此外,圖23中,對與在圖21、圖22所說明之構件等相同者賦予相同符號,省略說明。又,圖23中,省略圖21中之稜鏡反射鏡2041,將圓筒狀之光罩M與圓筒狀之圖案面p2001上之照明區域IR與第2光學系2015間之光路、以及旋轉捲筒2030之外周面(或基板P之表面)p2002上之投影區域PA與第2光學系2015間之光路展開顯示。 Here, an example of the configuration of the illumination optical system IL (first optical system 2014) shown in FIGS. 21 and 22 will be described with reference to FIG. 23. In addition, in FIG. 23, the same members as those described in FIGS. 21 and 22 are given the same symbols, and the description is omitted. In FIG. 23, the
如先前所說明,於照明光學系IL設有來自光源之光束EL0(照明光束EL0)射入而生成多數個點光源像之複眼透鏡2062、使來自多數個點光源像之各個之光束在照明視野光闌(blind)2064上重疊之聚光透鏡2065、以及將通過照明視野光闌2064之開口之照明光導至投影光學系PL(第2光學系2015)之凹面鏡2040之透鏡系2066。由於適用凱拉照明法,因此在複眼透鏡2062之射出側生成點光源像之面Ep,係藉由構成聚光透鏡2065、透鏡系2066、凹面鏡2040之玻璃材(凹透鏡狀)設定成與凹面鏡2040之反射面所位於之瞳面pd共軛。 As described previously, the illumination optical system IL is provided with a
在YZ面內,複眼透鏡2062之射出端中心配置於聚光透鏡2065之光軸2065a上,於該光軸2065a上配置照明視野光闌2064(開口部)之中心。進而,照明視野光闌2064,藉由構成透鏡系2066、凹面鏡2040之玻璃材(凹透鏡狀)、第2光學系2015之複數片透鏡,配置於與圓筒狀之光罩M上之照明區域IR(圖案面p2001)光學上共軛之面2014b。 In the YZ plane, the center of the output end of the fly-
又,照明光學系IL之第1光學系2014之光軸2014a雖配置成與投影光學系PL(第2光學系2015)之光軸2015a同軸,但聚光透鏡2065之光軸2065a係配置成相對第1光學系2014之光軸2014a在圖23之紙面(XZ面)內往-Z方向偏心。 Further, although the
此處,以生成於複眼透鏡2062射出側之面Ep之複數個點光源像中位於隔著光軸2065a於Z方向為非對稱之位置之兩個點光源像SPa、SPd為例,說明照明光束之現象。 Here, taking the two point light source images SPa and SPd located at the position asymmetric in the Z direction across the
來自點光源像SPa之光束,藉由聚光透鏡2065成為大致平行之光束照射照明視野光闌2064。透射照明視野光闌2064之開口部(於Y方向為細長之狹縫狀)之照明光束EL1a,藉由透鏡系2066而於形成於投影光學系PL之凹面鏡2040反射面之窗內收斂成點光源像Sfa。 The light beam from the point light source image SPa is irradiated by the
來自點光源像Sfa之照明光束EL1a,如在圖21所說明,透過投影光學 系PL之第2光學系2015照明圓筒狀之光罩M之圓筒狀之圖案面p2001上之照明區域IR。藉由來自該點光源像Sfa之照明光束EL1a之照射而在圖案面p2001產生之成像光束EL2a,係於第2光學系2015逆行進而於凹面鏡2040上再度成像出點光源像Sfa’。藉由來自照明光學系IL之光束而作成之點光源像Sfa與藉由成像光束EL2a而作成之點光源像Sfa’於瞳面pd內位於點對稱之關係之位置。 The illumination light beam EL1a from the point light source image Sfa, as explained in FIG. 21, illuminates the illumination area IR on the cylindrical pattern surface p2001 of the cylindrical mask M through the second
同樣地,來自點光源像SPd之光束,藉由聚光透鏡2065成為大致平行之光束照射照明視野光闌2064。透射照明視野光闌2064之開口部之照明光束EL1d,藉由透鏡系2066而於形成於凹面鏡2040反射面之窗內收斂成點光源像Sfd。來自點光源像Sfd之照明光束EL1d,透過第2光學系2015照明圓筒狀之圖案面p2001上之照明區域IR。藉由來自該點光源像Sfd之照明光束之照射而在圖案面p2001產生之成像光束EL2a,係於第2光學系2015逆行進而於凹面鏡2040上再度成像出點光源像Sfd’。藉由來自照明光學系IL之光束而作成之點光源像Sfd與藉由成像光束EL2d而作成之點光源像Sfd’於瞳面pd內位於點對稱之關係之位置。 Similarly, the light beam from the point light source image SPd is irradiated by the
在凹面鏡2040之反射面形成有點光源像Sfa’、Sfd’之成像光束EL2a、EL2d,投射於基板P上之圓筒狀之投影區域PA內,照明區域IR內之光罩圖案之像成像投影於基板P之投影區域PA內。 On the reflective surface of the
圖24係顯示射入圖23所示之生成照明光學系IL之複眼透鏡2062之照明光束EL0之光源裝置2055之構成。光源裝置2055具備固態光源2057、擴展透鏡(凹透鏡)2058、聚光透鏡2059、以及導光構件2060。固態光源2057包含例如雷射二極體(LD)、發光二極體(LED)等。從固態光源2057射出之照明光束LB藉由擴展透鏡2058轉換成發散光束,藉由聚光透鏡2059以既定之收斂比例(NA)聚光於導光構件2060之射入端面2060a。 FIG. 24 shows the configuration of the
導光構件2060係例如光纖等,射入射入端面2060a之照明光束LB,係 保存NA(數值孔徑)而從射出端面2060b射出,藉由透鏡系2061(準直器)被轉換為大致平行之照明光束EL0。透鏡系2061,將照明光束EL0之光束徑調整成照射複眼透鏡2062之射入側之面整體。此外,單一之光纖之直徑雖為例如300μm,但當來自固態光源2057之照明光束LB之光強度較大時,亦可將複數條光纖緊密地綑束。 The
圖25係從聚光透鏡2065側觀看圖23中之複眼透鏡2062之射出側之面Ep(與YZ面平行)所形成之多數個點光源像SP之排列狀態。當在YZ面內,將複眼透鏡2062之射出側之面Ep之中心點設為2062a時,此中心點2062a位於聚光透鏡2065之光軸2065a上。 FIG. 25 shows the arrangement state of the plurality of point light source images SP formed by the plane Ep (parallel to the YZ plane) on the exit side of the fly-
如圖25所示,本實施形態之複眼透鏡2062包含排列在與聚光透鏡2065之光軸2065a正交之面之複數個透鏡要件2062E。複數個透鏡要件2062E之各個具有於Y方向細長之矩形之剖面,於Y方向與Z方向緊密綑束。於各透鏡要件2062E射出端之中心雖形成點光源像(點)SP,但此為圖24中之導光構件2060(光纖)之射出端面2060b之共軛像。又,在YZ面內觀看時,複數個透鏡要件2062E被綑束成各點光源像SP相對中心點2062a(光軸2065a)為彼此非點對稱。 As shown in FIG. 25, the compound-
圖25所示之例中,當將包含聚光透鏡2065之光軸2065a、與XY面平行之面設為p2006時,若較此面p2006更位於+Z側之透鏡要件2062E之組為上部透鏡要件群2062U、較此面p2006更位於-Z側之透鏡要件2062E之組為下部透鏡要件群2062D,則在上部透鏡要件群2062U與下部透鏡要件群2062D之間,係將位置錯開透鏡要件2062E之Y方向尺寸之1/2。其結果,分散在上部透鏡要件群2062U內之複數個點光源像SP與分散在下部透鏡要件群2062D內之複數個點光源像SP,相對與通過中心點2062a之與Y軸平行之線亦為非對稱之配置。 In the example shown in FIG. 25, when the plane including the
之所以複眼透鏡2062之各透鏡要件2062E在YZ面內之剖面形狀構成 為延伸於Y方向之長方形,係為了配合圖23中之照明視野光闌2064之狹縫狀開口形狀之故。亦參照圖26說明其樣子。 The cross-sectional shape of each
圖26係在YZ面內觀看圖23中之照明視野光闌2064之圖。於照明視野光闌2064形成有於Y方向為細長之矩形狀(或梯形狀)之開口部2064A,來自複眼透鏡2062之各點光源像SP之光束藉由聚光透鏡2065而在照明視野光闌2064上成為包含開口部2064A之矩形狀照明光束EL1被重疊。當已將開口部2064A之開口中心配置於聚光透鏡2065之光軸2065a上時,照明光學系IL之第1光學系2014之光軸2014a,通過自開口部2064A之開口中心往+Z方向偏心之位置。 FIG. 26 is a view of the
圖27係從投影光學系PL之第2光學系2015側觀看能使用於藉由圖25之複眼透鏡2062生成之點光源像SP分布之凹面鏡2040之反射面p2004(配置於瞳面pd)之樣子。凹面鏡2040之反射面p2004由於與複眼透鏡2062之射出側之面Ep共軛,因此圖25所示之複數個點光源像SP(透鏡要件2062E)之分布為如圖27所示在反射面p2004(瞳面pd)內左右、上下反轉之點光源像Sf(黑圓圈)之分布。 FIG. 27 is a view of the reflection surface p2004 (disposed on the pupil plane pd) of the
如先前以圖22所說明,於凹面鏡2040之反射面p2004,用以使複數個點光源像Sf透射之窗部2042相對中心點2044(光軸2015a)配置成非點對稱。在圖27之例,窗部2042形成為於Z方向細長延伸之狹縫狀以使來自於Z方向排列成一列之複數個點光源像Sf之各照明光束彙整透射。又,反射面p2004內之狹縫狀窗部2042以外處,為使來自圓筒狀之光罩M之照明區域IR內之圖案之成像光束有效率地反射之高反射部。 As previously described with reference to FIG. 22, the reflecting surface p2004 of the
複數個點光源像Sf,相對包含第2光學系2015之光軸2015a且與中心面pc(圖21)正交之平面p2005配置成非面對稱,狹縫狀之各窗部2042之Y方向尺寸,較窄地設定為不遮蔽點光源像Sf之程度。如以圖23所說明,來自通過各窗部2042之複數個點光源像Sf各個之光束(照明光束EL1)通過第 2光學系2015而重疊照射圓筒狀之光罩M之圖案面p2001上之照明區域IR。藉此,照明區域IR被以均一之照度分布照明。 A plurality of point light source images Sf are arranged non-plane symmetrically with respect to a plane p2005 including the
來自圖案面p2001之照明區域IR內所出現之光罩圖案之反射光(成像光束EL2)雖會返回至凹面鏡2040之反射面p2004,但該成像光束EL2,在反射面p2004係再度成為點光源像Sf’而成為分離之分布。如以圖22所說明,藉由成像光束EL2而生成於反射面p2004上之多數個點光源像Sf’(特別是0次繞射光)之分布,係相對中心點2044而與作為照明光束EL1之多數個點光源像Sf之分布為點對稱之關係。 Although the reflected light (imaging beam EL2) from the mask pattern appearing in the illumination area IR of the pattern surface p2001 returns to the reflecting surface p2004 of the
如圖27所示,與作為照明光束EL1源之多數個點光源像Sf所分布之複數個窗部2042為點對稱之關係之反射面p2004上之區域,由於均為高反射部,因此再度成像於反射面p2004上之點光源像Sf’(亦包含1次繞射光)幾乎不損失地被反射,到達基板P。 As shown in FIG. 27, the
此外,圖27中,即使在凹面鏡2040之反射面p2004中與包含投影光學系PL(第2光學系2015)之光軸2015a之平面p2005(與XY面平行)交叉之線上之部分有作為照明光束源之點光源像Sf之情形,只要如先前之配置條件般將點光源像Sf所位於之部分設為窗部2042,並將相對中心點2044與該窗部2042為點對稱之區域設為反射部(遮光部)即可。 In addition, in FIG. 27, even the part on the line crossing the plane p2005 (parallel to the XY plane) including the
不過,在點光源像Sf(窗部2042)位於中心點2044之場合,若以該點光源像Sf為源頭之照明光束照射圓筒狀之光罩M上之照明區域IR,則由於在該處反射之成像光束會收斂成在反射面p2004之中心點2044(窗部2042)形成點光源像Sf’,因此有不成為射往基板P之成像光束之情形。因此,可以在反射面p2004之中心點2044附近無點光源像Sf之方式,改變構成複眼透鏡2062之多數個透鏡要件2062E之排列,或於與中心點2044位置對應之透鏡要件2062E施加遮光膜(塗墨)。 However, when the point light source image Sf (window portion 2042) is located at the
又,本實施態樣中,如以圖25與圖27所示,雖係將形成於複眼透鏡2062之射出側之面Ep之點光源像SP之配置(透鏡要件2062E之排列)與形成於凹面鏡2040之反射面p2004之窗部2042之配置一對一地配合,但不一定有其必要。亦即,對於形成於複眼透鏡2062之射出側之面Ep之多數個點光源像SP中從凹面鏡2040背側之面p2003射入而能到達反射面p2004(瞳面pd)之一部分點光源像Sf,亦可不設置窗部2042而保持反射面之狀態來遮光。該遮光,亦可藉由在凹面鏡2040背側之面p2003內於應遮蔽之點光源像Sf所位於之區域形成遮光膜或光吸收層來同樣地實現。 In addition, in this embodiment, as shown in FIGS. 25 and 27, although the arrangement of the point light source image SP (the arrangement of
從構成投影光學系PL之第2光學系2015射入凹面鏡2040之成像光束EL2(多數個點光源像Sf’),亦可不一定要在凹面鏡2040完全反射。例如,於凹面鏡2040之反射面p2004,除了透射性之窗部2042與反射部以外,亦可設置遮蔽作為照明光束EL1源之複數個點光源像Sf與藉由成像光束EL2之收斂而形成之複數個點光源像Sf’之一方或雙方之一部分點光源像之遮光部。 The imaging light beam EL2 (many point light source images Sf') incident on the
以上,說明了第11實施形態,本實施形態中,如圖21或圖22所示,來自照明光學系IL之照明光,從配置於投影光學系PL之瞳面pd之凹面鏡2040背側射入,透過構成投影光學系PL之第2光學系2015與稜鏡反射鏡2041上側之反射平面2041a,作為照明光束EL1到達圓筒狀之光罩M上之照明區域IR。 The eleventh embodiment has been described above. In this embodiment, as shown in FIG. 21 or FIG. 22, the illumination light from the illumination optical system IL enters from the back side of the
若將本實施態樣中之投影光學系PL之成像光路試區分為照明區域IR(物體面)至凹面鏡2040(瞳面pd)之第1光路與凹面鏡2040(瞳面pd)至投影區域PA(像面)之第2光路,則該第1光路兼作為用以將來自照明光學系IL之照明光束導至照明區域IR之落斜照明用之光路。 If the imaging optical path of the projection optical system PL in this embodiment is divided into the first optical path from the illumination area IR (object plane) to the concave mirror 2040 (pupil plane pd) and the concave mirror 2040 (pupil plane pd) to the projection area PA ( In the second optical path of the image plane, the first optical path doubles as an optical path for oblique illumination for guiding the illumination light beam from the illumination optical system IL to the illumination area IR.
如上述,本實施形態之處理裝置U3(曝光裝置),由於係以配置於投影 光學系PL之瞳面或其近旁之反射鏡有效率地在空間上分離照明光束與成像光束之落斜照明方式,因此能使裝置構成簡單。又,與藉由偏光狀態之差異分離照明光束與成像光束之方式比較,無需使用較大之偏光分束器或波長板等,能使裝置構成簡單。 As described above, the processing device U3 (exposure device) of the present embodiment can efficiently separate the illumination beam from the imaging beam spatially by the oblique illumination method by using a reflector arranged on the pupil plane of the projection optical system PL or its vicinity Therefore, the device structure can be simplified. In addition, compared with the method of separating the illumination beam and the imaging beam by the difference in the polarization state, it is not necessary to use a large polarizing beam splitter or wavelength plate, etc., which can simplify the device configuration.
再者,在使照明光束與成像光束偏光分離之方式下,雖有需對應因波長板導致之波面動亂、或因在偏光分束器之消光比之問題導致之投影像特性(對比、像差等)劣化之情形,但在本實施態樣中,幾乎沒有因該等原因導致之投影像之特性劣化,能抑制曝光不良之發生。又,本實施形態之處理裝置U3由於組裝有透過投影光學系一部分將照明光照射於反射型光罩M之落斜照明方式,因此與於透射型之光罩內部組裝照明光學系之情形相較,特別在照明光學系之設計自由度提高。 In addition, in the method of separating the illumination beam from the imaging beam by polarization, although it is necessary to respond to the wave surface disturbance caused by the wavelength plate, or due to the problem of the extinction ratio of the polarizing beam splitter, the projected image characteristics (contrast, aberration Etc.) Deterioration, but in this embodiment, there is almost no degradation of the characteristics of the projected image due to these reasons, which can suppress the occurrence of poor exposure. In addition, since the processing device U3 of the present embodiment is equipped with the oblique illumination method that irradiates illumination light to the reflective mask M through a part of the projection optical system, it is compared with the case where the illumination optical system is assembled inside the transmissive mask , Especially in the design of lighting optics, the degree of freedom is improved.
本實施態樣中,圖24所示之光源裝置2055,由於能縮小點光源像之尺寸,因而假定了使用放射光指向性強之雷射光源(例如KrF、ArF、XeF等準分子雷射光),但不限定於此。例如,亦可使用放射g線、h線、i線等輝線光之燈光源、或放射光指向性弱之雷射二極體或發光二極體(LED)等。 In this embodiment, since the
本實施形態之元件製造系統2001(圖20),由於能使處理裝置U3(曝光裝置)之構成簡單,因此能減低元件之製造成本。又,由於處理裝置U3係一邊將基板P沿旋轉捲筒2030之外周面p2002搬送一邊掃描曝光之方式,因此能效率良好地執行曝光處理。其結果,元件製造系統2001能以良好效率製造元件。 The component manufacturing system 2001 (FIG. 20) of this embodiment can simplify the configuration of the processing device U3 (exposure device), so that the manufacturing cost of the component can be reduced. In addition, since the processing device U3 is a method of scanning exposure while conveying the substrate P along the outer peripheral surface p2002 of the
其次,參照圖28說明第12實施形態。本實施形態係將以先前之圖25、圖27所說明之複眼透鏡2062構成與形成於凹面鏡2040之反射面p2004內之點光源像Sf之配置變更者,對與上述實施形態相同之構成要件賦予與上述實施形態相同之符號,簡化或省略其說明。 Next, the twelfth embodiment will be described with reference to FIG. 28. In this embodiment, the configuration of the fly-
圖28,係在與投影光學系PL之光軸2015a正交之YZ面內,觀看凹面鏡2040之反射面p2004內複眼透鏡2062之複數個透鏡要件2062E如何等價地配置之圖。以複數個透鏡要件2062E(點光源像Sf)相對凹面鏡2040之反射面p2004之中心點2044(光軸2015a)成為彼此非點對稱之排列之方式,最接近中心點2044之透鏡要件2062E之中心從中心點2044往Y方向及Z方向位移。 FIG. 28 is a diagram showing how the
本實施態樣中,複眼透鏡2062之各透鏡要件2062E之剖面形狀(在YZ面內之形狀)係如以先前圖26所說明般,設定為與包含照明視野光闌2064之矩形開口部2064A之長方形相似之形狀,但此處,Y方向剖面尺寸Py與Z方向剖面尺寸Pz之比Py/Pz設定為大致4。因此,分布於反射面p2004(瞳面pd)內之多數個點光源像Sf亦於Y方向以剖面尺寸Py之節距排列,於Z方向以剖面尺寸Pz之節距排列。 In this embodiment, the cross-sectional shape (shape in the YZ plane) of each
只要係通常之複眼透鏡,各透鏡要件2062E中心雖會往Y方向與Z方向之兩方筆直地排列配置,但本實施態樣中,係使於Z方向相鄰之透鏡要件2062E彼此於Y方向各位移△Y來配置。若將此位移量△Y設為透鏡要件2062E之Y方向剖面尺寸(排列之節距)Py之1/4左右,則各點光源像Sf會位於在YZ面內彼此往±45度、±135度之任一方向分離之位置。 As long as it is a common compound eye lens, although the center of each
圖28中,當特定出位於反射面p2004之中心點2044之極近處、包圍中心點2044之四個點光源像Sf時,以該四個點光源像Sf包圍之區域(此處為傾斜之長方形)之重心位置係從中心點2044位移。換言之,以該四個點光源像Sf包圍之區域之重心位置位於與中心點2044不同之位置。藉由將凹面鏡2040與複眼透鏡2062在YZ面內之位置關係設定為會產生此種位移,而能將所有點光源像Sf之各個以相對中心點2044彼此為非點對稱之關係來配置。此事意指能隨時使相對中心點2044與各點光源像Sf為點對稱之關係之反射面p2004上之區域成為反射部。 In FIG. 28, when the four point light source images Sf located very near the
雖對應於如以上所配置之點光源像Sf之分布而於凹面鏡2040之反射面p2004內形成使各點光源像Sf透射之窗部2042,但該窗部之形狀、尺寸、配置能考量幾種形態。單純而言,係如圖28所示,使僅使一個點光源像Sf透射之圓形之窗部2042H配合點光源像Sf之排列而分布於反射面p2004全面之形態。 Although the
作為其他形態,亦可係使在反射面p2004上相對Y方向傾斜45度之方向排列成一列之所有點光源像Sf彙整透射之槽狀窗部2042K。當以位於此窗部2042K內之一連串點光源像Sf作為源頭之照明光束照射圓筒狀之光罩M之照明區域IR時,該反射光束(成像光束),係凹面鏡2040之反射面p2004上成為點光源像Sf’(亦包含1次繞射像)收斂於從使點光源像Sf透射之窗部位移之反射區域2042K’。此外,亦可係使相對Y方向傾斜45度之方向所排列之兩個點光源像Sf為一組彙整透射之橢圓形(或葫蘆形)之窗部2042L。不論係哪一種窗部2042H,2042K,2042L,都是將來自各點光源像Sf之照明光局部不遮蔽之範圍內極力地縮小形成。 As another form, all the point light source images Sf arranged in a row on the reflecting surface p2004 inclined 45 degrees with respect to the Y direction may converge and transmit the groove-shaped
以上之第12實施態樣中,複眼透鏡2062之透鏡要件2062E之Y方向位移量△Y可任意設定,透鏡要件2062E之剖面尺寸之比Py/Pz亦不一定要設為整數倍。 In the above twelfth embodiment, the Y-direction displacement amount ΔY of the
其次,參照圖29說明第13實施形態。本實施形態亦與圖28同樣地,係關於複眼透鏡2062之構成與形成於凹面鏡2040之反射面p2004內之點光源像Sf配置之變形者。圖29之構成中,複眼透鏡2062之複數個透鏡要件2062E之中心在YZ面內直線排列於Y方向與Z方向。 Next, a thirteenth embodiment will be described with reference to FIG. 29. This embodiment is also similar to FIG. 28 in terms of the configuration of the fly-
在此種複眼透鏡2062之情形,形成於各透鏡要件2062E之射出側之點光源像Sf,於Y方向以剖面尺寸Py之節距排列,於Z方向以剖面尺寸Pz之節距排列。此種情形亦與圖28之第12實施態樣所說明般,當著眼於位在 凹面鏡2040之反射面p2004之中心點2044(光軸2015a)之極近處、包圍中心點2044之四個點光源像Sfv1,Sfv2,Sfv3,Sfv4時,以該四個點光源像Sfv1~Sfv4包圍之區域(長方形)之重心位置Gc係從中心點2044位移。換言之,重心位置Gc位於與中心點2044不同之位置。 In the case of this fly-
藉由將凹面鏡2040與複眼透鏡2062在YZ面內之位置關係設定為會產生此種位移,而能將所有點光源像Sf之各個以相對中心點2044彼此為非點對稱之關係來配置。因此,能隨時使相對中心點2044與各點光源像Sf為點對稱之關係之反射面p2004上之區域成為反射部。 By setting the positional relationship of the
此外,於本實施形態之凹面鏡2040之反射面p2004,係配合透鏡要件2062E(點光源像Sf)之排列節距形成有用以使點光源像Sf個別透射之圓形窗部2042H。 In addition, the reflecting surface p2004 of the
其次,參照圖30說明第14實施形態。本實施形態亦與圖28、圖29同樣地,係關於複眼透鏡2062之構成與形成於凹面鏡2040之反射面p2004內之點光源像Sf配置之變形者。圖30之構成中,雖複眼透鏡2062之複數個透鏡要件2062E(剖面形狀為於Y方向細長之長方形)於Y方向以剖面尺寸Py之節距排列,於Z方向以剖面尺寸Pz之節距緊密地排列,但排列於Y方向之一列量之透鏡要件2062E群,係於Z方向之每一列交互在Y方向改變(錯開)位置地排列。 Next, a fourteenth embodiment will be described with reference to FIG. 30. This embodiment is similar to FIGS. 28 and 29 in terms of the configuration of the fly-
在複眼透鏡2062之情形,點光源像Sf雖生成於接收來自光源之照明光(例如圖24中之EL0)之所有各透鏡要件2062E之射出端側,但為了遮蔽於該點光源像Sf中相對凹面鏡2040之反射面p2004之中心點2044為彼此點對稱之配置關係之兩個點光源像Sf之一方,而於對應之透鏡要件2062E形成遮光體2062s。 In the case of the
在圖30之構成中,係於對應之透鏡要件2062E形成遮光體2062s(金屬 薄膜等)以於凹面鏡2040之反射面p2004內被選擇之點光源像Sf亂數且均一地分布。在使用此種複眼透鏡2062時,亦如圖30所示於凹面鏡2040之反射面p2004形成用以使點光源像Sf透射之圓形窗部2042H。 In the configuration of FIG. 30, a
其次,參照圖31說明第15實施形態。在本實施形態,不使用至此為止所說明之複眼透鏡2062,而藉由光源像形成部於凹面鏡2040之反射面p2004內形成多數個點光源像Sf。圖31係顯示包含凹面鏡2040在與XZ面平行且包含光軸2015a(中心點2044)之面之剖面,在點光源像Sf(Sfa)所位於之反射面p2004上形成有各窗部2042H。 Next, the fifteenth embodiment will be described with reference to FIG. 31. In the present embodiment, the
凹面鏡2040,例如係於低熱膨脹率之精密陶瓷或玻璃陶瓷製之母材之凹面側形成有反射膜者。於該反射膜以與先前之各實施態樣相同之條件形成複數個窗部2042H,在本實施形態中,於該窗部2042H後方之母材形成使照明光學系IL一部分即光纖Fbs通過之貫通孔(1mm程度之直徑)。 The
各光纖Fbs之射出端發揮點光源像之功能,設置於與反射面p2004大致相同之面。照射於各光纖Fbs之射入端之照明光,被設定成從光纖Fbs之射出端投射之照明光束(例如EL1a)具有既定數值孔徑(發散角度特性)。又,來自各光纖Fbs射出端之照明光束之方向設定於與通過該射出端(點光源像)之主光線之方向一致。 The exit end of each optical fiber Fbs functions as a point light source image, and is provided on a surface substantially the same as the reflection surface p2004. The illumination light irradiated to the entrance end of each optical fiber Fbs is set so that the illumination light beam (for example, EL1a) projected from the exit end of the optical fiber Fbs has a predetermined numerical aperture (divergence angle characteristic). In addition, the direction of the illumination beam from the exit end of each optical fiber Fbs is set to coincide with the direction of the chief ray passing through the exit end (point light source image).
在圖31所示之構成,由於不使用複眼透鏡2062而在光纖Fbs之射出端生成多數個點光源像Sf之各個,因此雖需要對應窗部2042H數目之光纖,但能使光源至凹面鏡2040之系、亦即照明光學系IL整體小型化。 In the configuration shown in FIG. 31, since a plurality of point light source images Sf are generated at the exit end of the optical fiber Fbs without using the
又,於凹面鏡2040雖設有光纖Fbs之射出端貫通之小孔,但亦可於該小孔之各個埋設石英製之細光管(圓柱狀桿)等,於該光管各個之射入端側設置具有聚光透鏡之紫外線發光二極體(LED),而使各光管之射出端側與凹面鏡2040之反射面p2004一致。 In addition, although the
其次,參照圖32A、32B、圖33A、33B、33C說明第16實施形態。在本實施形態中,係取代照明光學系IL內之複眼透鏡2062,而使用桿透鏡(角柱狀之玻璃或石英)來均一地照明圓筒狀之光罩M上之照明區域IR。 Next, the sixteenth embodiment will be described with reference to FIGS. 32A, 32B, 33A, 33B, and 33C. In the present embodiment, instead of the
圖32A係從Y軸方向觀看導引光源之光之導光構件2060(光纖)至投影光學系PL(第2光學系2015)之光路之俯視圖,圖32B係從Z軸方向觀看圖32A之光路之俯視圖。圖32A、32B中,從照明視野光闌2064至投影光學系PL之光路構成,由於與先前之圖23之構成相同,因此該部分之說明省略。 32A is a plan view of the optical path of the light guide member 2060 (optical fiber) that guides the light of the light source to the projection optical system PL (second optical system 2015) from the Y-axis direction, and FIG. 32B is the optical path of FIG. 32A from the Z-axis direction Top view. In FIGS. 32A and 32B, the configuration of the optical path from the
圖32A、32B所示之照明光學系IL,具備以圖24說明之導光構件2060、聚光透鏡2093、桿透鏡2094、照明視野光闌2064、透鏡系2066等。凹面鏡2040之後之投影光學系PL(第2光學系2015)之構成與先前之圖21、圖23相同。 The illumination optical system IL shown in FIGS. 32A and 32B includes the
從導光構件(光纖)2060射出之照明光束EL0,藉由聚光透鏡2093而收斂於桿透鏡2094之射入端面2094a或其近旁。桿透鏡2094沿YZ面之剖面形狀(射入端面2094a、射出端面2094b),形成為包含照明視野光闌2064之梯形或長方形之開口部2064A(圖26)之長方形。其剖面形狀,係與先前之圖25、圖28~圖30所示之複眼透鏡2062之透鏡要件2062E之剖面形狀大致相似形狀。 The illumination light beam EL0 emitted from the light guide member (optical fiber) 2060 is converged by the
在使用桿透鏡2094之情形,在射入端面2094a收斂之照明光束EL0,係在桿透鏡2094內部,在與XZ面平行之側面2094c及與XY面平行之側面2094d之間多數次移動而反覆內部反射後進至射出端面2094b。在桿透鏡之情形,雖照明光之照度分布最為均一者為射出端面2094b,但其均一性會隨著內部反射之反覆數越多而越好。因此,使該射出端面2094b和與圓筒狀之光罩M上之照明區域IR共軛之面2014b一致地配置。 When the
由於本實施形態之桿透鏡2094之剖面為長方形,因此在對向之側面2094c間之照明光之反射次數,較在對向之側面2094d間之照明光之反射次數少。照明光束EL0在桿透鏡2094內面反射之次數,從提高照度均一性之觀點來看係以為兩次以上之方式設定桿透鏡2094之長度等。此外,由於桿透鏡2094之射出端面2094b之形狀係界定照明區域IR之外緣,因此照明視野光闌2064亦可省略。 Since the
接著,若將連結桿透鏡2094之射入端面2094a在YZ面內之中心點與射入端面2094b在YZ面內之中心點之線設為中心軸AX2003,則此中心軸AX2003雖與投影光學系PL之光軸2015a(透鏡系2066之光軸2014a)平行,但往Z方向偏心。進而,導光構件2060之射出端雖配置於聚光透鏡2093之光軸2093a上,但該光軸2093a相對桿透鏡2094之中心軸AX2003往-Y方向位移配置。 Next, if the line connecting the center point of the
藉由該往-Y方向之位移,而能將生成於凹面鏡2040之反射面p2004內之多數個點光源像Sf配置成相對反射面p2004之中心點2044(光軸2015a)為非點對稱。依據圖33A~33C詳述此事。圖33A係從桿透鏡2094之射出端面2094b側往X軸方向觀看聚光透鏡2093之圖,圖33B係從透鏡系2066側往X軸方向觀看桿透鏡2094之圖,圖33C係從X軸方向觀看凹面鏡2040之反射面p2004之圖。 By the displacement in the -Y direction, a plurality of point light source images Sf generated in the reflective surface p2004 of the
如圖33A所示,桿透鏡2094之剖面係以與XY面平行之側面2094d及與XZ面平行之側面2094c規定之矩形,桿透鏡2094之中心軸AX2003與聚光透鏡2093之光軸2093a係相對地往Y方向偏心。又,如圖33B所示,相對於透鏡系2066之光軸2014a(2015a),桿透鏡2094之中心軸AX2003往Z方向偏心。 As shown in FIG. 33A, the cross-section of the
在此種構成中,作為凹面鏡2040之母材之凹透鏡與透鏡系2066,係將桿透鏡2094之射出端面2094b所位於之面2014b之傅立葉轉換面(瞳面pd) 形成於凹面鏡2040之反射面p2004上。因此,如圖33C所示,於凹面鏡2040之反射面p2004上多數個點光源像Sf於Y方向以節距DSy、於Z方向以節距DSz形成。該等點光源像Sf,係作為在桿透鏡2094之射入端面2094a收斂之照明光束EL0之點像之虛像出現。 In this configuration, the concave lens and the
複數個點光源像Sf,由於桿透鏡2094之剖面為長方形,因此與其剖面長邊平行之方向(Y方向)之點光源像Sf之排列節距DSy,較與短邊平行之方向(Z方向)之點光源像Sf之排列節距DSz長。又,如圖32A、32B所示,在桿透鏡2094內之照明光之內部反射次數,由於Z方向較Y方向多,因此生成於凹面鏡2040之反射面p2004上之點光源像Sf之數目,亦係Z方向較Y方向多。圖33C之例中,於Z方向排列五個點光源像Sf,於Y方向排列三個點光源像Sf。 A plurality of point light source images Sf have a rectangular cross section, so the arrangement pitch Dsy of the point light source images Sf parallel to the long side of the cross section (Y direction) is more parallel to the short side (Z direction) The arrangement pitch of the point light source like Sf is long. Also, as shown in FIGS. 32A and 32B, since the number of internal reflections of the illumination light in the
再者,藉由使桿透鏡2094之中心軸AX2003與聚光透鏡2093之光軸2093a相對地於Y方向偏心,而生成於凹面鏡2040之反射面p2004上之點光源像Sf之分布,相對中心點2044(光軸2015a)整體往Y方向偏心,能將點光源像Sf之各個配置成相對中心點2044為彼此非點對稱之關係。 Furthermore, by decentering the central axis AX2003 of the
與先前圖27所示之實施態樣同樣地,於凹面鏡2040之反射面p2004,使於Z方向排列成一列之複數個點光源像Sf彙整透射之槽狀窗部2042係在Y方向以節距DSy形成有三列。各窗部2042之Y方向寬度,係在不遮蔽以點光源像Sf為源頭之照明光束之範圍設定成盡可能小。此等槽狀之窗部2042亦形成為相對中心點2044為彼此非點對稱之配置。 As in the previous embodiment shown in FIG. 27, the reflection surface p2004 of the
在圖33C之構成,桿透鏡2094之中心軸AX2003與聚光透鏡2093之光軸2093a之Y方向偏心量被設定為,在凹面鏡2040之反射面p2004(瞳面pd)上,最接近中心點2044(光軸2015a)之點光源像Sf至中心點2044之Y方向距離(設為Yk)設定成排列於Y方向之窗部2042之間隔(設為Yw)之一半未滿、亦即Yk<(Yw/2)。 In the configuration of FIG. 33C, the eccentric amount in the Y direction of the central axis AX2003 of the
如上述,若將作為照射圓筒狀之光罩M之照明區域IR之照明光束EL1之源之點光源像Sf配置於凹面鏡2040之反射面p2004(瞳面pd)上,則從圓筒狀之光罩M上之照明區域IR產生之成像光束EL2,係如圖33C所示,在反射面p2004上成為點光源像Sf之繞射像Sf’(包含0次光與±1次繞射光等)而分布。在反射面p2004上,繞射像Sf’與照明光束EL1源即點光源像Sf位於相對中心點2044為點對稱之位置。 As described above, if the point light source image Sf that is the source of the illumination light beam EL1 illuminating the illumination region IR of the cylindrical mask M is arranged on the reflection surface p2004 (pupil surface pd) of the
本實施形態中,由於上述之距離Yk與間隔Yw之關係設定為Yk<(Yw/2),因此藉由成像光束EL2而生成於凹面鏡2040(瞳面pd)上之複數個繞射像Sf’,均形成於從窗部2042偏移之反射部上。如此,成像光束EL2幾乎不損失地在凹面鏡2040之反射部反射,而如先前之圖21所示,投射於沿外周面p2002保持之基板P上之投影區域PA。 In this embodiment, since the relationship between the distance Yk and the interval Yw is set to Yk<(Yw/2), a plurality of diffraction images Sf′ generated on the concave mirror 2040 (pupil plane pd) by the imaging beam EL2 , Are formed on the reflecting portion offset from the
如上所述,即使係使用桿透鏡2094之情形,仍能藉由使在桿透鏡2094之射入端面2094a上之照明光束EL0之收斂位置從中心軸AX2003位移,來將多數個點光源像Sf之各個設定為相對凹面鏡2040之反射面p2004之中心點2044為彼此非點對稱之關係。 As described above, even in the case where the
其次,參照圖34、圖35說明第17實施形態之處理裝置(曝光裝置)U3之構成。本實施形態之曝光裝置,係為了對應基板P上之圖案曝光區域之Y方向尺寸較先前圖21所示之投影光學系PL之照明區域IR或投影區域PA之Y方向尺寸大,而將複數個投影光學系於Y方向排列,以於Y方向擴展實效曝光可能範圍。 Next, the configuration of the processing device (exposure device) U3 of the seventeenth embodiment will be described with reference to FIGS. 34 and 35. The exposure apparatus of the present embodiment is designed to correspond to the Y dimension of the pattern exposure area on the substrate P is larger than the Y dimension of the illumination area IR or projection area PA of the projection optical system PL shown in FIG. The projection optics are arranged in the Y direction to expand the possible exposure range in the Y direction.
因此,必須將圓筒狀之光罩M之圖案作為正立像投影於基板P上。在先前圖21所示之投影光學系PL,投影於基板P上之光罩圖案像之X方向雖為正立,但在Y方向係反轉。因此,藉由將相同構成之投影光學系一前一後(串列)地設置,即可使Y方向反轉之投影像再度於Y方向反轉,其結 果在基板P上之投影區域PA內,在X方向與Z方向兩方使之為正立像。 Therefore, the pattern of the cylindrical mask M must be projected on the substrate P as a standing image. In the projection optical system PL shown in FIG. 21 previously, although the X direction of the mask pattern image projected on the substrate P is upright, it is reversed in the Y direction. Therefore, by arranging the projection optics of the same configuration in tandem (in tandem), the projection image with the Y direction inverted can be inverted again in the Y direction, and the result is within the projection area PA on the substrate P , Making it a positive standing image in both the X and Z directions.
圖34係顯示本實施形態之曝光裝置整體之概略構成,圖35係顯示複數個投影光學系之各個形成之照明區域IR與投影區域PA之配置關係,各圖之正交座標系XYZ,與先前圖21之實施形態中所設定之座標系統一致。又,對與先前圖21、圖23所示之曝光裝置之構件或要件同等者賦予相同符號。 FIG. 34 shows the overall schematic configuration of the exposure apparatus of this embodiment. FIG. 35 shows the arrangement relationship between the illumination area IR and the projection area PA formed by each of a plurality of projection optical systems. The orthogonal coordinates of each figure are XYZ, and the previous The coordinate system set in the embodiment of FIG. 21 is the same. In addition, the same symbols as those of the components or requirements of the exposure apparatus shown in FIGS. 21 and 23 are given.
從搬送路徑上游搬送來之基板p,透過未圖示之搬送滾筒或導引構件等捲繞於旋轉捲筒2030之外周面一部分後,透過未圖示之導引構件或搬送滾筒往下游搬送。第2驅動部2032,係將旋轉捲筒2030繞旋轉中心軸AX2002順時針旋轉驅動,基板P以一定之速度被移送。六個投影光學系PL2001~PL2006之各投影區域PA2001~PA2006位於旋轉捲筒2030之圓筒狀之外周面中捲繞有基板P之部分。與該六個投影區域PA2001~PA2006之各個對應,於圓筒狀之光罩M之外周面(圓筒狀之光罩圖案面)上設定六個照明區域IR 2001~PA2006。 The substrate p transferred from the upstream of the transfer path is wound around a part of the outer peripheral surface of the
該六個投影光學系PL2001~PL2006均為相同之光學構成,分為相對包含圓筒狀之光罩M之旋轉中心軸AX2001與旋轉捲筒2030之旋轉中心軸AX2002之中心面pc(與YZ面平行)設置於左側(-X方向)之投影光學系PL2001、PL2003、PL2005(亦總稱為奇數之投影光學系PLo),與設置於右側(+X方向)之投影光學系PL2002、PL2004、PL2006(亦總稱為偶數之投影光學系PLe)。 The six projection optics PL2001~PL2006 all have the same optical structure, and are divided into the central plane pc (with the YZ plane) relative to the central axis of rotation AX2001 of the cylindrical mask M and the central axis of rotation AX2002 of the rotating reel 2030 (Parallel) projection optics PL2001, PL2003, PL2005 (also collectively called odd projection optics PLo) on the left (-X direction), and projection optics PL2002, PL2004, PL2006 (on the right) (+X direction) It is also referred to as even-numbered projection optics (PLe).
本實施形態之投影光學系PL2001~PL2006,具備圖21所示之投影光學系PL與落斜照明用之照明光學系IL2001~IL2006。由於其構成與圖21相同,因此代表性地簡單說明投影光學系PL2001與照明光學系IL2001。照明光學系IL2001,係射入來自光源裝置2055之照明光束EL0,從投影光學系PL2001上段之單元(與圖21相同之投影光學系PL)之瞳面所配置之凹面鏡2040背側於反射面p2004生成多數個點光源像Sf。以該點光源像Sf為源頭 之照明光束EL1,在稜鏡反射鏡2041上側之反射平面2041a被反射,照射圓筒狀之光罩M之外周面上之照明區域IR2001。 The projection optics PL2001-PL2006 of this embodiment include the projection optics PL shown in FIG. 21 and the illumination optics IL2001-IL2006 for oblique illumination. Since its configuration is the same as FIG. 21, the projection optical system PL2001 and the illumination optical system IL2001 will be representatively briefly described. Illumination optics IL2001, which enters the illuminating light beam EL0 from the
從照明區域IR2001內之光罩圖案反射之成像光束EL2,在反射平面2041a被反射後,在凹面鏡2040反射,在稜鏡反射鏡2041下側之反射面(2041b)反射,於面p2007(中間像面p2007)形成光罩圖案之空間像(中間像)。 The imaging light beam EL2 reflected from the mask pattern in the illumination area IR2001 is reflected on the
投影光學系PL2001後段之投影單元亦係具備稜鏡反射鏡、複數片透鏡元件、配置於瞳面之凹面鏡2078等之半視野之等倍反折射投影系,在中間像面p2007形成中間像之成像光束EL2在凹面鏡2078反射後,在稜鏡反射鏡(2076)下側之反射平面2076b反射,到達基板P上之投影區域PA2001,於投影區域PA2001內生成光罩圖案之正立正像。此外,投影光學系PL2001後段(中間像面至投影區域)之投影單元,由於只要使形成於中間像面p2007之中間像再度成像於基板P上之投影區域PA2001即可,因此於凹面鏡2078之反射面未設有形成於凹面鏡2040之反射面p2004之窗部2042。 The projection unit of the second stage of the projection optics PL2001 is also a half-field equal-magnification reverse-refraction projection system with a prism reflector, a plurality of lens elements, a
如以上構成之投影光學系PL2001(其他之投影光學系PL2002~PL2006亦相同),由於係所謂多透鏡方式之一個投影系,因此有時會有如圖21之投影光學系PL般無法將通過照明區域IR內之中心點之主光線與通過投影區域PA2001內之中心點之主光線配置於中心面pc內之情形。 As the projection optical system PL2001 constructed above (the same is true for other projection optical systems PL2002~PL2006), since it is a projection system of the so-called multi-lens system, there may be times when the projection optical system PL of FIG. 21 cannot pass through the illumination area. The case where the chief ray of the center point in IR and the chief ray passing through the center point in the projection area PA2001 are arranged in the center plane pc.
因此,如圖34所示,投影光學系PL2001(PL2003,PL2005亦相同)上側之投影單元之稜鏡反射鏡2041之反射平面2041a之角度θ 2001(參照圖21)設定為45°以外之值,以使通過照明區域IR2001內之中心點之主光線之延長線D2001往圓筒狀之光罩M之旋轉中心軸AX2001。同樣地,投影光學系PL2001下側之投影單元之稜鏡反射鏡2076之反射平面2076b之角度設定為相對XY面為45°以外之值,以使通過投影區域PA2001內之中心點之主光線之延長線D2001往圓筒狀之光罩M之旋轉中心軸AX2002。 Therefore, as shown in FIG. 34, the angle θ 2001 (refer to FIG. 21) of the
相對中心面pc而與投影光學系PL2001對稱配置之投影光學系 PL2002(PL2004,PL2006亦相同)亦同樣地,上側之投影單元之稜鏡反射鏡2041之反射平面2041a之角度θ 2001設定為45°以外之值,以使通過照明區域IR2002內之中心點之主光線之延長線D2002往圓筒狀之光罩M之旋轉中心軸AX2001,在後段之投影單元之稜鏡反射鏡2076之反射平面2076b之角度設定為相對XY面為45°以外之值,以使通過投影區域PA2002內之中心點之主光線之延長線D2002往圓筒狀之光罩M之旋轉中心軸AX2002。 Similarly to the projection optics PL2002 (the same as PL2004 and PL2006) with respect to the center plane pc and symmetrically arranged with the projection optics PL2001, the angle θ 2001 of the
如以上所述,主光線之延長線D2001、D2002相對中心面pc對稱地傾斜之奇數之投影光學系PLo與偶數之投影光學系PLe,在XZ面內觀看時雖係相對中心面pc對稱配置,但在XY面觀看時則為於Y方向偏移配置。具體而言,各投影光學系PL2001~PL2006被設置成,形成於圓筒狀之光罩M之圖案面上之照明區域IR2001~IR2006與形成於基板P上之投影區域PA2001~PA2006成為圖35之配置關係。 As described above, the odd-numbered projection optical system PLo and the even-numbered projection optical system PLe of the extension lines D2001 and D2002 of the chief ray symmetrically inclined with respect to the central plane pc are arranged symmetrically with respect to the central plane pc when viewed in the XZ plane. However, when viewed on the XY plane, it is offset in the Y direction. Specifically, each projection optical system PL2001~PL2006 is set so that the illumination areas IR2001~IR2006 formed on the pattern surface of the cylindrical mask M and the projection areas PA2001~PA2006 formed on the substrate P become Configuration relationship.
圖35,係在XY面內觀看照明區域IR2001~IR2006與投影區域PA2001~PA2006之配置之圖,左側之圖係從形成中間像之中間像面p2007側觀看圓筒狀之光罩M上之照明區域IR2001~IR2006者,右側之圖係從中間像面p2007側觀看支承於旋轉捲筒2030之基板P上之投影區域PA2001~PA2006者。又,圖35中之符號Xs,係顯示圓筒狀之光罩M(旋轉捲筒2020)與旋轉捲筒2030之移動方向(旋轉方向)。 Figure 35 is a view of the arrangement of the illumination areas IR2001~IR2006 and the projection areas PA2001~PA2006 in the XY plane. The figure on the left shows the illumination on the cylindrical mask M from the side of the intermediate image plane p2007 forming the intermediate image For the areas IR2001~IR2006, the right picture is the projection area PA2001~PA2006 supported on the substrate P of the
圖35中,各照明區域IR2001~IR2006係具有與中心面pc(與Y軸平行)之上底邊與下底邊之細長梯形狀。此事意指圖34所示之照明光學系IL2001~IL2006之個具備如先前圖26所示之照明視野光闌2064。此外,圖34之各投影光學系PL2001~PL2006由於係於中間像面p2007形成中間像,因此當於該處配置具有梯形開口之視野光闌時,亦可將各照明區域IR2001~IR2006之形狀構成為單純之長方形狀(包含梯形開口之大小)。 In FIG. 35, each illumination area IR2001~IR2006 has an elongated trapezoid shape with an upper base and a lower base parallel to the center plane pc (parallel to the Y axis). This means that each of the illumination optical systems IL2001 to IL2006 shown in FIG. 34 has an
在圓筒狀之光罩M之外周面上,藉由奇數之投影光學系Plo形成之照 明區域IR2001、IR2003、IR2005各自之中心點位於與中心面pc平行之面Lo(垂直於XY面)上,藉由偶數之投影光學系PLe形成之照明區域IR2002、IR2004、IR2006各自之中心點位於與中心面pc平行之面Le(垂直於XY面)上。 On the outer peripheral surface of the cylindrical mask M, the center points of the illumination regions IR2001, IR2003, and IR2005 formed by the odd-numbered projection optics Plo are on the plane Lo (perpendicular to the XY plane) parallel to the center plane pc The center points of the illumination regions IR2002, IR2004, and IR2006 formed by the even-numbered projection optics PLe are on the plane Le (perpendicular to the XY plane) parallel to the center plane pc.
若使各照明區域IR2001~IR2006為梯形,使其下底邊之Y方向尺寸為A2002a,使其上底邊之Y方向尺寸為A2002b,則奇數之照明區域IR2001、IR2003、IR2005各自之中心點於Y方向以間隔(A2002a+A2002b)配置,偶數之照明區域IR2002、IR2004、IR2006各自之中心點亦於Y方向以間隔(A2002a+A2002b)配置。不過,相對於奇數之照明區域IR2001、IR2003、IR2005,偶數之照明區域IR2002、IR2004、IR2006於Y方向相對偏移尺寸(A2002a+A2002b)/2。此外,面Lo與面Le自中心面pc起之X方向距離設定為彼此相等。 If the illumination areas IR2001~IR2006 are trapezoidal, the dimension of the bottom direction in the Y direction is A2002a, and the dimension of the top direction in the Y direction is A2002b, then the center points of the odd numbered illumination areas IR2001, IR2003, IR2005 are at The Y direction is arranged at intervals (A2002a+A2002b), and the center points of the even-numbered illumination regions IR2002, IR2004, IR2006 are also arranged at intervals (A2002a+A2002b) in the Y direction. However, relative to the odd-numbered illumination areas IR2001, IR2003, and IR2005, the even-numbered illumination areas IR2002, IR2004, and IR2006 are relatively offset in the Y direction by (A2002a+A2002b)/2. In addition, the distances in the X direction from the center plane pc of the plane Lo and the plane Le are set to be equal to each other.
本實施形態中,照明區域IR2001~IR2006之各個構成為沿圓筒狀之光罩M外周面之周方向(Xs方向)觀看時相鄰於Y方向之照明區域之端部彼此(梯形之斜邊部)互相重疊(overlap)。藉此,即使係圓筒狀之光罩M之圖案區域A2003之Y方向尺寸較大時,亦能確保涵蓋其之有效曝光區域。此外,圖案區域A2003雖被框狀之圖案非形成區域A2004包圍,但圖案非形成區域A2004係以對照明光具有極低之反射率(或高光吸收率)之材質構成。 In the present embodiment, each of the illumination regions IR2001 to IR2006 is configured such that the ends of the illumination region adjacent to the Y direction when viewed in the circumferential direction (Xs direction) of the outer circumferential surface of the cylindrical mask M (the trapezoidal oblique side) Department) overlap each other (overlap). With this, even when the dimension of the pattern area A2003 of the cylindrical mask M in the Y direction is large, it can ensure that the effective exposure area of the pattern area A2003 is covered. In addition, although the pattern area A2003 is surrounded by the frame-shaped pattern non-formation area A2004, the pattern non-formation area A2004 is made of a material having extremely low reflectance (or high light absorption rate) for illumination light.
另一方面,如圖35右側所示,基板P上之投影區域PA2001~PA2006,當於各照明光學系IL2001~IL2006中設有如圖26之照明視野光闌2064時,會成為反映形成於圓筒狀光罩M外周面上之照明區域IR2001~IR2006之配置與形狀者(相似之關係)。因此,奇數之投影區域PA2001、PA2003、PA2005各中心點位於面Lo上,偶數之投影區域PA2002、PA2004、PA2006各中心點位於面Le上。 On the other hand, as shown in the right side of FIG. 35, when the projection areas PA2001 to PA2006 on the substrate P are provided with the
此外,在圖35右側之圖中,基板P雖沿旋轉捲筒2030之外周面於周方 向(Xs方向)以一定速度移送,但該圖中之斜線所示區域A2007,係藉由六個投影區域PA2001~PA2006相對於目標曝光量(劑量)以100%被曝光之部分。 In addition, in the diagram on the right side of FIG. 35, although the substrate P is transferred at a constant speed in the circumferential direction (Xs direction) along the outer peripheral surface of the
又,藉由例如對應於照明區域IR2001之投影區域PA2001曝光之區域A2005中在+Y方向之端部(三角形部分)被曝光之部分區域A2005a,係未達目標曝光量。然而,在基板P被移送於Xs方向(周方向),藉由對應於照明區域IR2002之投影區域PA2002對區域A006曝光時,係加算不足之曝光量,其結果部分區域A2005a亦相對於目標曝光量(劑量)以100%被曝光。 In addition, the partial area A2005a exposed at the end (triangle portion) in the +Y direction of the area A2005 exposed by the projection area PA2001 corresponding to the illumination area IR2001, for example, does not reach the target exposure amount. However, when the substrate P is transferred in the Xs direction (circumferential direction) and the area A006 is exposed by the projection area PA2002 corresponding to the illumination area IR2002, the insufficient exposure amount is added, and as a result, the partial area A2005a is also relative to the target exposure amount (Dose) was exposed at 100%.
以此方式,形成於圓筒狀之光罩M外周面之圖案區域A2003整體之投影像,係每於圓筒狀之光罩M一旋轉即反覆以等倍轉印於基板P上之長邊方向。 In this way, the projected image of the entire pattern area A2003 formed on the outer peripheral surface of the cylindrical mask M is transferred over the long side of the substrate P with equal magnification every time the cylindrical mask M rotates direction.
此外,雖將從圓筒狀之光罩M上之各照明區域IR2001~IR2006射向投影光學系PL2001~PL2006之各成像光束EL2之主光線中通過各照明區域IR2001~IR2006內之中心點之主光線之延長線D2001,D2002設為與圓筒狀之光罩M之旋轉中心軸AX2001交叉,但不一定有其必要,只要通過各照明區域IR2001~IR2006內之任一點之主光線與旋轉中心軸AX2001交叉即可。同樣地,從各投影光學系PL2001~PL2006射向基板P上之之各投影區域PA2001~PA2006之成像光束EL2亦同樣地,只要使其主光線中任一主光線一致於與旋轉捲筒2030之旋轉中心軸AX2002交叉之延長線D2001,D2002即可。 In addition, although the principal rays of the imaging beams EL2 from the illumination regions IR2001~IR2006 on the cylindrical mask M to the projection optics PL2001~PL2006 pass through the main point of the center point in each illumination region IR2001~IR2006 The extension lines D2001 and D2002 of the rays are set to cross the central axis of rotation AX2001 of the cylindrical mask M, but they are not necessarily necessary, as long as they pass through the principal ray and the central axis of rotation at any point within each illumination area IR2001~IR2006 AX2001 can be crossed. Similarly, the imaging beam EL2 emitted from each projection optical system PL2001~PL2006 to each projection area PA2001~PA2006 on the substrate P is the same, as long as any of the chief rays is consistent with the
其次,使用圖36說明圖34所示之投影光學系PL2001~PL2006與照明光學系IL2001~IL2006之具體構成。圖36,雖代表性地顯示投影光學系PL2001及照明光學系IL2001之詳細構成,但其他之投影光學系PL2002~PL2006及照明光學系IL2002~IL2006之構成亦相同。 Next, the specific configurations of the projection optical systems PL2001 to PL2006 and the illumination optical systems IL2001 to IL2006 shown in FIG. 34 will be described using FIG. 36. 36, although the detailed configurations of the projection optical system PL2001 and the illumination optical system IL2001 are representatively shown, the configurations of the other projection optical systems PL2002-PL2006 and the illumination optical systems IL2002-IL2006 are also the same.
如圖36所示,來自包含導光構件2060與透鏡系2061之光源裝置2055(參照圖24)之照明光束EL0,射入照明光學系IL2001之複眼透鏡2062(參照圖 25、圖28~30)。以生成於複眼透鏡2062射出側之面Ep之多數個點光源像為源頭之照明光束,藉由聚光透鏡2065而在與配置照明視野光闌2064之光罩共軛之面2014b成為均一之照度分布。通過照明視野光闌2064之開口部之照明光束,透射透鏡系2066、投影光學系PL2001上側(第1段)之第2光學系2015之凹面鏡2040之母材(石英等)、形成於凹面鏡2040之反射面p2004之窗部(2042)、第2光學系2015,進而在稜鏡反射鏡2041上側之反射平面2041a被反射往沿延長線ID2001之方向,到達圓筒狀之光罩M上之照明區域IR。 As shown in FIG. 36, the illumination light beam EL0 from the light source device 2055 (refer to FIG. 24) including the
與先前之圖23之構成同樣地,由於凹面鏡2040之反射面p2004配置於投影光學系PL2001之成像光束中之瞳面pd,其反射面p2004配置成與複眼透鏡2062射出側之面Ep實質上共軛,因此將生成於複眼透鏡2062射出側之面Ep之多數個點光源像中繼者,生成於形成在反射面p2004之窗部2042內。 23, since the reflection surface p2004 of the
又,圖36之具體構成中,於稜鏡反射鏡2041上側之反射平面2041a與圓筒狀之光罩M之圖案面p2001之間,沿傾斜之延長線D2001設有聚焦修正光學構件2080與像移光學構件2081。聚焦修正光學構件2080,例如係將兩片楔形之稜鏡逆向(圖36中於X方向為逆向)疊合成整體為透明之平行平板。藉由使此一對稜鏡滑動,即能改變作為平行平板之厚度,以成像光束之實效光路長,並微調形成於中間像面p2007及投影區域PA2001之圖案像之聚焦狀態。 Furthermore, in the specific configuration of FIG. 36, a focus correction
像移修正光學構件2081係以能在圖36中之XZ面內傾斜之透明平行平板玻璃與能傾斜於與其正交之方向之透明平行平板玻璃構成。藉由調整該兩片平行平板玻璃之各傾斜量,而能使形成於中間像面p2007及投影區域PA2001之圖案像微幅位移於X方向或Y方向。 The image-shift correction optical member 2081 is composed of a transparent parallel flat glass that can be tilted in the XZ plane in FIG. 36 and a transparent parallel flat glass that can be tilted in a direction orthogonal to it. By adjusting the amount of inclination of the two parallel flat glasses, the pattern image formed on the intermediate image plane p2007 and the projection area PA2001 can be slightly displaced in the X direction or the Y direction.
接著,出現於照明區域IR2001內之光罩圖案之像,透過聚焦修正光學 構件2080、像移修正光學構件2081、稜鏡反射鏡2041之反射平面2041a、投影光學系PL2001上側(第一段)之第2光學系2015、稜鏡反射鏡2041之反射平面2041b,成像於中間像面p2007,於此中間像面p2007能配置使投影區域PA201形狀成為如圖35所示之梯形之視野光闌2075。此情形下,設於照明光學系IL2001之照明視野光闌2064之開口部亦可係包含視野光闌2075之梯形開口部之矩形(長方形)。 Next, the image of the mask pattern appearing in the illumination area IR2001 passes through the focus correction
在視野光闌2075之開口部成為中間像之成像光束,透過構成投影光學系PL2001之下側(第二段)稜鏡反射鏡2076之反射平面2076a、第2光學系2077、稜鏡反射鏡2076之反射平面2076b,投影於捲繞於旋轉捲筒2030之外周面p2002之基板P上之投影區域PA2001。第2光學系2077所含之凹面鏡2078之反射面配置於瞳面pd,稜鏡反射鏡2076下側之反射平面2076b,相對XY面之角度設定為45°未滿,以使成像光束之主光線沿相對中心面pc傾斜之延長線D2001行進。 The imaging beam that becomes an intermediate image at the opening of the
接著,圖36之具體構成中,於稜鏡反射鏡2076下側之反射平面2076b與捲繞於旋轉捲筒2030之基板P上之投影區域PA2001之間設有倍率修正光學構件2083,其將凹透鏡、凸透鏡、凹透鏡之三片以既定間隔同軸配置,前後凹透鏡為固定,使其間之凸透鏡移動於光軸(主光線)方向。藉此,形成於投影區域PA2001之圖案像,可一邊維持遠心之成像狀態、一邊等方地擴大或縮小微小量。 Next, in the specific configuration of FIG. 36, a magnification correction
此外,圖36中雖未顯示,但亦設有能使稜鏡反射鏡2041或稜鏡反射鏡2076之任一方微幅旋轉於繞與Z軸平行之軸旋轉之旋轉修正機構。此旋轉修正機構,例如係使圖35所示之複數個投影區域PA2001~PA2006(及被投影之光罩圖案像)之各個在XY面內微幅旋轉。 In addition, although not shown in FIG. 36, there is also provided a rotation correction mechanism capable of slightly rotating either the
以上,在第17實施形態中,如圖34、圖36所示,六組之投影光學系PL2001~PL2006之各個,能以具有與圓筒狀之光罩M之旋轉中心軸AX2001 交叉之主光線之照明光,對圓筒狀之光罩M外周面(圖案面)上之各照明區域IR2001~IR2006進行落斜照明。 As described above, in the seventeenth embodiment, as shown in FIGS. 34 and 36, each of the six sets of projection optics PL2001 to PL2006 can have a principal ray crossing the central axis of rotation AX2001 of the cylindrical mask M For the illumination light, each illumination area IR2001~IR2006 on the outer peripheral surface (pattern surface) of the cylindrical mask M is illuminated obliquely.
進而,成像光束被偏向成,從各照明區域IR2001~IR2006往圓筒狀之光罩M之圖案面p2001之法線方向行進之主光線從法線方向亦射入沿著外周面p2002之基板P上之投影區域PA2001~PA2006。因此,能減少投影像之散焦,抑制曝光不良等處理不良產生,其結果可抑制不良元件產生。 Furthermore, the imaging light beam is deflected so that the principal rays traveling from each illumination area IR2001 to IR2006 to the normal direction of the pattern surface p2001 of the cylindrical mask M also enter the substrate P along the outer peripheral surface p2002 from the normal direction The above projection area PA2001~PA2006. Therefore, it is possible to reduce the defocus of the projected image and suppress the occurrence of processing defects such as poor exposure, and as a result, the generation of defective elements can be suppressed.
又,投影光學系PL2001~PL2006之各個,由於係在圓筒狀之光罩M之外周面至稜鏡反射鏡2041(反射平面2041a)之間構成為成像光束之主光線相對中心面pc傾斜,因此於各投影光學系PL2001~PL2006之空間上之配置,彼此干涉(衝撞)之條件係被緩和。 In addition, each of the projection optics PL2001~PL2006 is formed between the outer peripheral surface of the cylindrical mask M and the prism reflector 2041 (
此外,稜鏡反射鏡2041下側之反射平面2076b與稜鏡反射鏡2076上側之反射平面2076a相對XY面以45°之角度設定成通過投影光學系PL2001~PL2006之各個之中間像面p2007之成像光束之主光線與中心面pc平行。 In addition, the
在圖34~36所示之具備多透鏡方式之投影光學系之曝光裝置中,雖係將圓筒面狀之光罩圖案之像投影曝光至被支承為圓筒面狀之基板P之表面,但光罩M或基板P亦可作成將任一方平面支承,或亦可將兩方平面支承之構成。例如,可係基板P如圖34所示捲繞於旋轉捲筒2030而支承成圓筒面狀,光罩M如習知般形成於平行之平面玻璃(石英)而直線移動於X方向之掃描曝光方式,或相反地,光罩M可支承於如圖34之旋轉捲筒2020,基板P可以平坦之平面載台或空氣墊式之保持具支承而直線移送於X方向之掃描曝光方式,可為上述兩方式之任一者。 In the exposure apparatus with a multi-lens projection optical system shown in FIGS. 34 to 36, although the image of the cylindrical mask pattern is projected and exposed to the surface of the substrate P supported by the cylindrical surface, However, the photomask M or the substrate P may be configured to support either plane, or may support both planes. For example, the substrate P may be wound on a
又,雖不論光罩M或基板P之支承形態為圓筒面狀或平面狀,均能適用先前各實施形態之投影光學系與照明光學系,但只要於被支承為與XY面平行之平面狀之側,將稜鏡反射鏡2041上側之反射平面2041a或稜鏡反射 鏡2076下側之反射平面2076b之相對XY面之傾斜角度設為45°即可。換言之,只要配合通過光罩M上之照明區域IR(物體面)中心之法線或通過基板P上之投影區域PA(像面)中心之法線,將投影光學系之物體面側之主光線或像面側之主光線在XZ面內傾斜即可。 Moreover, the projection optical system and the illumination optical system of the previous embodiments can be applied regardless of whether the supporting form of the reticle M or the substrate P is a cylindrical plane or a plane, but as long as it is supported on a plane parallel to the XY plane On the side of the shape, the inclination angle of the
圖37係顯示第18實施態樣之投影光學系PL(在多透鏡方式之情形為PL2001)構成之圖。本實施形態之投影光學系PL(PL2001),係使來自圓筒狀光罩M外周面之照明區域IR(IR2001)內之光罩圖案之成像光束EL2(將主光線設為EL6)在平面反射鏡2100之反射面2100a反射,透過具有於瞳面配置反射面p2004之凹面鏡2040之第2光學系2015(半視野類型之反折射成像系),在平面反射鏡2101之反射面2101a使之反射,於中間像面Im形成出現於照明區域IR(IR2001)內之光罩圖案之等倍中間像。 FIG. 37 is a diagram showing the configuration of the projection optical system PL (PL2001 in the case of the multi-lens system) of the eighteenth embodiment. The projection optics PL (PL2001) of this embodiment reflects the imaging beam EL2 (with the chief ray set to EL6) from the mask pattern in the illumination area IR (IR2001) on the outer peripheral surface of the cylindrical mask M on the plane The
進而,形成於中間像面Im之中間像,藉由具有例如兩倍以上之倍率之放大成像系2102(具有與Z軸平行之光軸2102a)投影於沿與XY面平行之外周面p2002被支承之基板P上之投影區域PA(PA2001)。基板P,透過流體軸承層被支承於具有表面為平坦之流體軸承用之墊之平面保持具HH上。本實施形態亦同樣地,於構成投影光學系PL(PL2001)之凹面鏡2040之反射面p2004,形成有使藉由來自背後之照明光學系IL(IL2001)之照明光而生成之多數個點光源像Sf透射之窗部2042。 Furthermore, the intermediate image formed on the intermediate image plane Im is projected on the outer peripheral surface p2002 parallel to the XY plane by the magnification imaging system 2102 (having the
使如圖37之放大投影光學系多透鏡化,在曝光Y方向尺寸大之光罩圖案時,係將包含照明光學系IL(IL2001)與平面反射鏡2100、2101之投影光學系PL(PL1)之組於如先前之圖34、圖35所示,在XZ面內配置成相對中心面pc成對稱,於Y方向分離配置成在投影區域PA(PA2001)之Y方向端部(三角形部分)投影像一部分重疊。 The enlarged projection optical system as shown in FIG. 37 is multi-lens, and when a mask pattern with a large dimension in the Y direction is exposed, the projection optical system PL (PL1) including the illumination optical system IL (IL2001) and the plane mirrors 2100, 2101 will be included As shown in the previous FIGS. 34 and 35, the group is arranged in the XZ plane to be symmetrical with respect to the central plane pc, and separated in the Y direction to be projected at the end (triangle part) of the Y direction of the projection area PA (PA2001) Like a part of overlap.
本實施形態中,當中心面pc為包含圓筒狀之光罩M之旋轉中心軸 AX2001且與XY面(外周面p2002)垂直之面時,奇數之投影光學系PL2001,PL2003...之照明區域IR2001,IR2003...之各中心點(例如主光線EL6通過之點),由於光罩側之主光線EL6相對中心面pc傾斜,因此從圓筒狀之光罩M之外周面與中心面pc之交線起在周長分離距離DMx。因此,偶數之投影光學系PL2002,PL2004...之照明區域IR2002,IR2004...之各中心點亦從圓筒狀之光罩M之外周面與中心面pc之交線起在周長分離距離DMx。因此,奇數之照明區域IR2001...與偶數之照明區域IR2002...係於圓筒狀之光罩M上之周長方向分離距離(2DMx)。 In the present embodiment, when the center plane pc is a plane including the rotation center axis AX2001 of the cylindrical mask M and is perpendicular to the XY plane (outer peripheral surface p2002), the illumination of the odd-numbered projection optics PL2001, PL2003... Each central point of the regions IR2001, IR2003... (for example, the point where the principal ray EL6 passes), since the principal ray EL6 on the reticle side is inclined with respect to the central plane pc, the outer peripheral surface and the central plane from the cylindrical reticle M From the intersection of pc, the distance DMx is separated at the circumference. Therefore, the center points of the illumination areas IR2002, IR2004... of the even-numbered projection optics PL2002, PL2004... are also separated at the circumference from the intersection of the outer peripheral surface of the cylindrical mask M and the central surface pc Distance DMx. Therefore, the odd-numbered illumination area IR2001... and the even-numbered illumination area IR2002... are separated by a distance (2DMx) in the circumferential direction on the cylindrical mask M.
另一方面,由於奇數之投影光學系PL2001,PL2003...之投影區域PA2001,PA2003...之各中心點(例如主光線EL6通過之點)在基板P上從中心面pc往X方向分離距離DFx,因此奇數之投影區域PA2001...與偶數之投影區域PA2002...,在基板P上於X方向分離距離(2DFx)。因此,在將形成於圓筒狀之光罩M上之各照明區域IR2001,IR2002...各自之光罩圖案一致地形成於周方向時,若將投影光學系PL2001,PL2002...之放大倍率設為Mp,則需設定為滿足MP‧(2DMx)=2DFx之關係。若因機構上之問題而無法以上述條件構成時,則只要將形成於圓筒狀之光罩M上之奇數之照明區域IR2001,IR2003...用之光罩圖案與偶數之照明區域IR2002,IR2004...用之光罩圖案於周方向相對錯開形成即可。 On the other hand, the center points of the projection areas PA2001, PA2003... of the odd-numbered projection optics PL2001, PL2003... (for example, the point where the chief ray EL6 passes) are separated from the center plane pc in the X direction on the substrate P The distance DFx, therefore the odd projection area PA2001... and the even projection area PA2002... are separated on the substrate P by a distance (2DFx) in the X direction. Therefore, when the illumination patterns IR2001, IR2002... formed on the cylindrical mask M are uniformly formed in the circumferential direction, if the projection optics PL2001, PL2002... are enlarged, If the magnification is set to Mp, it needs to be set to satisfy the relationship of MP‧(2DMx)=2DFx. If the above conditions cannot be used due to structural problems, the odd-numbered illumination area IR2001, IR2003... formed on the cylindrical mask M and the odd-numbered illumination area IR2002, IR2004... The mask pattern used should be relatively staggered in the circumferential direction.
圖38係顯示第19實施態樣之投影光學系PL構成之圖。本實施形態之投影光學系PL,係以透鏡系2103、透鏡系2104、配置於瞳面之凹面鏡(反射光學構件)2040、偏向鏡2106、2107、以及透鏡系2108構成。 FIG. 38 is a diagram showing the configuration of the projection optical system PL of the nineteenth embodiment. The projection optical system PL of this embodiment is composed of a
本實施形態中,來自圓筒狀之光罩M之外周面上之照明區域IR之成像光束EL2,係在透鏡系2103之光軸2103a,透過-X側之一半視野射入透鏡系2103,並射入透鏡系2104(其光軸2104a與光軸2103a同軸)。通過透鏡系 2103之成像光束EL2,在凹面鏡2040(其光軸為2104a)之反射面p2004反射,在偏向鏡2106之反射面p2106a反射往-X方向,被導至透鏡系2103、2104、凹面鏡2040所形成之光路外之後,在偏向鏡2107之反射面2107a反射往-Z方向。 In this embodiment, the imaging light beam EL2 from the illumination area IR on the outer peripheral surface of the cylindrical mask M is placed on the
在偏向鏡2107反射之成像光束EL2,通過透鏡系2108照射於投影區域PA。藉由以上之光路,投影光學系PL,將出現於光罩M上之照明區域IR內之光罩圖案之像成像於藉由與圖37相同之構成而被平面支承之基板P上之投影區域PA內。本實施形態之投影光學系,特別是為了以小型之系統實現放大投影,而設計成不形成中間像面。又,此投影光學系PL之圓筒狀之光罩M側之主光線EL6之延長線D2001,設定為與圓筒狀之光罩M之旋轉中心軸AX2001交叉,基板P側之主光線EL6設定為與被平面支承之基板P之表面垂直。 The imaging light beam EL2 reflected by the
圖38中,來自照明區域IR之成像光束EL2能設計成通過賦予主要之放大倍率之透鏡系2108之光軸2108a(與Z軸平行且相對基板P為垂直)之-X側。因此,切除從透鏡系2108之光軸2108a起+X側之部分、且係對光罩圖案之投影無助益之部分。藉此,能縮小投影光學系PL之X方向(基板P之掃描方向)之尺寸。 In FIG. 38, the imaging light beam EL2 from the illumination area IR can be designed to pass through the -X side of the optical axis 2108a (parallel to the Z axis and perpendicular to the substrate P) of the
本實施例亦與先前之圖21、圖23、圖31、圖32A、32B、圖37同樣地,照明光學系IL與光源裝置2055配置於凹面鏡2040之背側,多數個點光源像Sf生成於形成於凹面鏡2040之反射面p2004(配置於瞳面)之窗部(2042)內。在該點光源像之反射面p2004上之分布與反射面p2004內之窗部之形狀或配置,依據先前圖22所說明之條件,設定成如圖27~30、或圖33A~33C所示。 In this embodiment, as in the previous FIGS. 21, 23, 31, 32A, 32B, and 37, the illumination optical system IL and the
如上述之各實施形態或變形例(圖12、圖21、圖34~38)中,圓筒狀之光罩M雖係假定將反射部與非反射部形成之圖案直接形成於金屬、陶瓷、 玻璃等圓筒母材之表面,但亦可係作成於平坦性佳之短條狀極薄玻璃板(例如厚度100~500μm)之一面以反射膜形成有圖案之片狀之反射型光罩,使其沿金屬性之旋轉捲筒2020外周面彎曲捲繞。 As in the above-mentioned embodiments or modifications (FIGS. 12, 21, and 34 to 38 ), the cylindrical mask M assumes that the pattern formed by the reflecting part and the non-reflecting part is directly formed on metal, ceramic, The surface of the cylindrical base material such as glass, but it can also be made into a sheet-shaped reflective mask with a pattern formed by a reflective film on one surface of a short thin glass plate with a good flatness (for example, a thickness of 100-500 μm) It is bent and wound along the outer peripheral surface of the metallic
上述片狀之反射型光罩,亦可恆久地貼附於旋轉捲筒2020之外周面,亦可固定成能釋放(能交換)。此種片狀之反射型光罩,例如包含鋁等具有對照明光束EL1具有高反射率之材質之膜或介電體多層膜等。此情形下,旋轉捲筒2020,亦可設有吸收通過片狀之反射型光罩之透明部之照明光束EL1之遮光層(膜),該遮光層亦抑制雜光之產生。 The above-mentioned sheet-shaped reflective photomask may be permanently attached to the outer peripheral surface of the
又,圓筒狀之光罩M亦可係涵蓋全周僅形成有對應一個元件(一個顯示元件)之圖案者,亦可係形成有對應一個元件(一個顯示元件)之複數個圖案者。進而,圓筒狀之光罩M上之元件圖案亦可於外周面之周方向反覆配置,亦可於與旋轉中心軸AX2001平行之方向配置複數個。又,亦可於圓筒狀之光罩M設置第1元件製造用之圖案與用以製造與第1元件不同之第2元件之圖案。 In addition, the cylindrical mask M may cover only a pattern corresponding to one element (one display element) formed over the entire circumference, or a plurality of patterns corresponding to one element (one display element). Furthermore, the element patterns on the cylindrical mask M may be repeatedly arranged in the circumferential direction of the outer peripheral surface, or a plurality of element patterns may be arranged in a direction parallel to the rotation center axis AX2001. In addition, a pattern for manufacturing the first element and a pattern for manufacturing the second element different from the first element may be provided on the cylindrical mask M.
其次,說明元件製造方法。圖39係顯示本實施形態之元件製造方法之流程圖。 Next, the device manufacturing method will be described. FIG. 39 is a flowchart showing the device manufacturing method of this embodiment.
圖39所示之元件製造方法中,首先例如進行有機EL等自發光元件之顯示面板等之元件功能、性能設計,以CAD等設計必要之電路圖案或配線圖案(步驟201)。其次,根據以CAD等設計之各種層每個之圖案等元件之設計,製作必要之各層部分之光罩M(圓筒狀或平面狀)(步驟202)。又,先藉由購買或製造等準備捲有元件基材即透明膜或片、或極薄之金屬箔等基板、或作為顯示元件基材之可撓性基板(樹脂膜、金屬箔膜、塑膠等)之捲軸(步驟203)。 In the device manufacturing method shown in FIG. 39, first, for example, the device function and performance design of a display panel such as an organic EL self-luminous device is performed, and the necessary circuit pattern or wiring pattern is designed with CAD or the like (step 201). Next, according to the design of the pattern and other components of each layer designed by CAD or the like, the necessary mask M (cylindrical or planar) of each layer part is manufactured (step 202). In addition, by purchasing or manufacturing, etc., a substrate such as a transparent film or sheet or an ultra-thin metal foil, or a flexible substrate (resin film, metal foil film, plastic) used as a display element substrate is prepared by rolling or manufacturing. Etc.) (step 203).
此外,在步驟203準備之捲軸狀之基板,亦可係視需要將其表面改質 者、事前形成有基底層(例如藉由壓印方式形成之微小凹凸)、預先積層有光感應性之功能膜或透明膜(絕緣材料)者。 In addition, the reel-shaped substrate prepared in
其次,將所準備之基板投入捲軸式、批次式之製造線,於該基板上形成構成顯示面板元件等元件之電極或配線、絕緣膜、半導體膜(薄膜半導體)等之TFT等所構成之底板層,以積層於該底板層之方式形成作為顯示像素部之有機EL等自發光元件之發光層(步驟204)。於步驟204典型地包含於基板上之膜上形成抗蝕劑圖案之步驟、以此抗蝕劑圖案作為光罩而蝕刻上述膜之步驟。抗蝕劑圖案之形成,係實施將抗蝕劑膜於基板表面均一地形成之步驟、依據上述各實施形態以經由光罩M而被圖案化之曝光用光使基板之抗蝕劑膜曝光之步驟、使藉由該曝光而形成有光罩圖案之潛像之步驟。 Next, the prepared substrate is put into a reel-type or batch-type manufacturing line, and electrodes, wires, insulating films, semiconductor films (thin-film semiconductors), and other TFTs that constitute elements such as display panel elements are formed on the substrate. The base layer forms a light emitting layer of a self-luminous element such as an organic EL as a display pixel portion so as to be laminated on the base layer (step 204). Step 204 typically includes a step of forming a resist pattern on a film on the substrate, and a step of etching the film using the resist pattern as a photomask. The formation of the resist pattern is to perform the step of uniformly forming the resist film on the surface of the substrate, and to expose the resist film of the substrate with the exposure light patterned through the mask M according to the above embodiments Step: a step of forming a latent image with a mask pattern by the exposure.
在併用了印刷技術等之可撓性元件製造之情形,係實施於基板表面藉由塗布式形成功能性感光層(感光性矽烷耦合材)之步驟、依據上述各實施形態將經由光罩M而被圖案化之曝光用光照射於功能性感光層且於功能性感光層依據圖案形狀形成親水化之部分與撥水化之部分來形成圖案之曝光步驟、於功能性感光層之親水性高之部分塗布鍍敷基底液等並藉由無電解鍍敷析出形成金屬性之圖案之步驟等。 In the case of manufacturing a flexible element using printing technology, etc., it is a step of forming a functional photosensitive layer (photosensitive silane coupling material) by coating on the surface of the substrate. According to the above embodiments, the photomask M is used. The patterned exposure light is irradiated to the functional photosensitive layer, and the functional photosensitive layer is formed with a hydrophilic part and a water-repellent part to form a pattern according to the shape of the pattern. The exposure step of the functional sexy layer is highly hydrophilic. The step of applying a plating base liquid and the like and depositing a metallic pattern by electroless plating and the like.
又,於此步驟204,雖亦包含使用在先前各實施形態說明之曝光裝置使光阻層曝光之習知微影步驟,但亦包含對光感應性之觸媒層進行圖案曝光而藉由無電解鍍敷法形成金屬膜之圖案(配線、電極等)之濕式步驟、或者以含有銀奈米粒子之導電性墨等描繪圖案之印刷步驟等之處理。 In addition, in this
其次,依據所製造之元件,就以例如捲軸方式於長條基板上連續製造之顯示元件之每一個,實施將基板切割或切斷,或將在其他步驟製造之其他基板、例如保護膜(對環境遮蔽層)、具有密封功能之片狀彩色濾光器、或薄玻璃基板等貼合於各顯示面板元件之表面等之步驟,以組裝元件(步驟205)。其次,進行顯示面板元件是否正常發揮功能、或是否滿足所欲之性能 或特性等對元件之檢查等後處理(步驟)(步驟206)。以上述方式,能製造顯示面板(可撓性顯示器)等元件。 Secondly, according to the manufactured elements, each of the display elements continuously manufactured on the long substrate by, for example, a reel method, is implemented by cutting or cutting the substrate, or other substrates to be manufactured in other steps, such as a protective film (for Environmental shielding layer), a sheet-shaped color filter with a sealing function, or a thin glass substrate, etc., are attached to the surface of each display panel element, etc. to assemble the element (step 205). Next, post-processing (step) (step 206) of checking the element such as whether the display panel element is functioning normally or whether it satisfies the desired performance or characteristics is performed (step 206). In the above manner, components such as display panels (flexible displays) can be manufactured.
此外,本發明之技術範圍並非限定於上述實施形態或變形例者。例如,亦可省略在上述實施形態或變形例中說明之構成要件之一個以上。又,在上述實施形態或變形例中說明之構成要件亦可適當組合。 In addition, the technical scope of the present invention is not limited to those in the above-mentioned embodiments or modifications. For example, one or more of the constituent elements described in the above-mentioned embodiment or modification may be omitted. In addition, the constituent elements described in the above-mentioned embodiment or modification may be combined as appropriate.
1008‧‧‧搬送滾筒 1008‧‧‧Transfer roller
1009‧‧‧搬送裝置 1009‧‧‧Conveying device
1011‧‧‧基板處理裝置 1011‧‧‧Substrate processing device
1012‧‧‧光罩保持裝置 1012‧‧‧ Mask retention device
1013‧‧‧照明裝置 1013‧‧‧Lighting device
1014‧‧‧控制裝置 1014‧‧‧Control device
1021‧‧‧第1捲筒構件 1021‧‧‧The first reel member
1022‧‧‧第2捲筒構件 1022‧‧‧The second reel member
1023‧‧‧導引滾筒 1023‧‧‧Guide roller
1024‧‧‧驅動滾筒 1024‧‧‧Drive roller
1025‧‧‧第1檢測器 1025‧‧‧The first detector
1026‧‧‧第1驅動部 1026‧‧‧First drive unit
1030‧‧‧第1搬送滾筒 1030‧‧‧The first conveyor roller
1031‧‧‧第1導引構件 1031‧‧‧First guide member
1033‧‧‧第2導引構件 1033‧‧‧Second guide member
1034‧‧‧第2搬送滾筒 1034‧‧‧ 2nd transport roller
1035‧‧‧第2檢測器 1035‧‧‧ 2nd detector
1036‧‧‧第2驅動部 1036‧‧‧ 2nd drive unit
EL1‧‧‧照明光束 EL1‧‧‧Illumination beam
EL2‧‧‧成像光束 EL2‧‧‧Imaging beam
EX‧‧‧曝光裝置 EX‧‧‧Exposure device
IL‧‧‧照明光學系 IL‧‧‧ Department of Lighting Optics
IR‧‧‧照明區域 IR‧‧‧Illuminated area
M‧‧‧光罩 M‧‧‧mask
PA(PA1001~PA1006)‧‧‧投影區域 PA(PA1001~PA1006)‧‧‧Projection area
PL‧‧‧投影光學系 PL‧‧‧Projection optics
PL1001~PL1006‧‧‧投影模組 PL1001~PL1006‧‧‧Projection module
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TW107144810A TWI668526B (en) | 2011-12-20 | 2012-11-29 | Cylindrical mask exposure device |
TW109108967A TWI709830B (en) | 2011-12-20 | 2012-11-29 | Cylinder mask exposure device |
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TW106109149A TWI648601B (en) | 2011-12-20 | 2012-11-29 | Substrate processing device and element manufacturing method |
TW107144810A TWI668526B (en) | 2011-12-20 | 2012-11-29 | Cylindrical mask exposure device |
TW109108967A TWI709830B (en) | 2011-12-20 | 2012-11-29 | Cylinder mask exposure device |
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