CN106292187A - Exposure method - Google Patents
Exposure method Download PDFInfo
- Publication number
- CN106292187A CN106292187A CN201510241600.1A CN201510241600A CN106292187A CN 106292187 A CN106292187 A CN 106292187A CN 201510241600 A CN201510241600 A CN 201510241600A CN 106292187 A CN106292187 A CN 106292187A
- Authority
- CN
- China
- Prior art keywords
- mask
- substrate
- area
- exposure
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The present invention relates to a kind of exposure method.This exposure method comprises the steps: to provide substrate, and this substrate is formed thin film to be patterned, and this thin film includes first area and second area；Exposure light source is provided, is arranged at the side of this substrate；Thering is provided mask, be arranged between this exposure light source and substrate, this mask has the opening of patterning；Thering is provided lens module, this lens module is arranged between this mask and this substrate, for being amplified the opening of this mask；Control this substrate to move the most in the first direction with mask so that exposure light source makes this first area be exposed via this opening, this lens module；Controlling this substrate to move the most in a second direction with this mask so that exposure light source makes this second area be exposed via this opening, this lens module, wherein the movement velocity of this substrate is more than the movement velocity of this mask.
Description
Technical field
The present invention relates to a kind of exposure method, a kind of be applied in display floater processing procedure for forming the exposure method of patterned film.
Background technology
In the manufacture process of various electronic installations (such as display floater), exposure method is widely used in forming patterned film, but in existing exposure method, when the size of substrate to be exposed is bigger, multiple regions of whole substrate may be required for expose respectively whole substrate just can be made to expose completely, but use this kind of Exposure mode may cause between adjacent two regions exposed successively to there is unnecessary interval region, reduce the utilization rate of whole substrate.
Summary of the invention
The technical problem relatively low for solving the substrate utilization of existing exposure method, the present invention provides the exposure method that a kind of substrate utilization is higher.
A kind of exposure method, is used for forming patterned film, and it comprises the steps:
Thering is provided substrate, this substrate is formed thin film to be patterned, this thin film includes first area and second area；
Exposure light source is provided, is arranged at the side of this substrate；
Thering is provided mask, be arranged between this exposure light source and substrate, this mask has the opening of patterning；
Thering is provided lens module, this lens module is arranged between this mask and this substrate, for being amplified the opening of this mask；
Control this substrate to move the most in the first direction with mask, the light that exposure light source is sent sequentially is irradiated on the first area of this thin film via opening, this lens module of this mask, and then this first area completes exposure and is patterned, wherein the movement velocity of this substrate is more than the movement velocity of this mask；
Control this substrate to move the most in a second direction with this mask, the light that exposure light source is sent sequentially is irradiated on the second area of this thin film via opening, this lens module of this mask, and then this second area completes exposure and is patterned, wherein the movement velocity of this substrate is more than the movement velocity of this mask.
Compared with prior art, in the exposure method that this case provides, mask open pattern is amplified by lens module, and control the movement velocity movement velocity more than this mask of substrate, first area is increased with the exposure area of this second area, thus interval region this first area and this second area between can be reduced or eliminated, improve the utilization rate of substrate.
Accompanying drawing explanation
Fig. 1 is the exposure process schematic diagram of exposure method the first embodiment of the present invention.
Fig. 2 is the planar structure schematic diagram of the lens module of exposure method shown in Fig. 1.
Fig. 3 is each steps flow chart schematic diagram of first area exposure in exposure method shown in Fig. 1.
Fig. 4 is the exposure process schematic diagram of exposure method the second embodiment of the present invention.
Main element symbol description
Substrate 110,210
Thin film 115,215
First area 111,211
Second area 112,212
3rd region 113
4th region 114
Exposure light source 120,220
Mask 130,230
Opening 131,231
Lens module 140,240
Lens element 141
Plane projection 142
First direction X
Following detailed description of the invention will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
The present invention provides a kind of exposure method, is used for forming patterned film, and wherein this exposure method can be used for being formed the thin film of patterning in the manufacture process of display floater, such as the transparent electrode thin film etc. of patterning.Referring to the exposure process schematic diagram that Fig. 1, Fig. 1 are exposure method the first embodiments of the present invention, this exposure method comprises the steps:
Step S1, it is provided that substrate 110, this substrate 110 is formed thin film 115 to be patterned, and this thin film 115 includes first area 111, second area the 112, the 3rd region 113 and the 4th region 114.
This substrate 110 can be transparency carrier, and such as glass substrate, this thin film 115 is formed at the upper surface of this substrate 110, and in change embodiment, this thin film 1115 can also be formed at the lower surface of this substrate 110.This substrate 110 and this thin film 115 are rectangle, and size can be essentially identical, and specifically, in present embodiment, the planar dimension of this thin film 115 is 1850mm*1500mm (mm is millimeter).This first, second, third and the 4th region 111,112,113,114 can be equivalently-sized rectangular area, the size in the most each region 111,112,113,114 can be 925mm*750mm.Specifically, in present embodiment, this first area 111 is adjacent with this second area 112 and the 3rd region 113,4th region 114 is adjacent with this second area 112 and the 3rd region 113, this first area 111 is arranged with the 4th diagonal angle, region 114, and this second area 112 is arranged with the 3rd diagonal angle, region 113.
Step S2, it is provided that exposure light source 120, is arranged at the side of this substrate 110.
Specifically, this exposure light source 120 is preferably disposed on the side, surface being formed with this thin film 115 of this substrate 110, certainly, in change embodiment, when this substrate 110 is transparency carrier, this exposure light source 120 can also be arranged at the side that the surface being formed with this thin film 115 of this substrate 110 is contrary so that this thin film 115 can be exposed by exposure light source 120 via this transparency carrier 110.
Step S3, it is provided that mask 130, is arranged between this exposure light source 120 and substrate 110, and this mask 130 has the opening 131 of patterning.
Being appreciated that the light that this opening 131 can allow exposure light source 120 send passes through, the light that this mask 130 other parts in addition to this opening then stop this exposure light source 120 to send passes through.The patterning opening 131 of this mask 130 can design according to demand.In present embodiment, the size in each region 111,112,113,114 being dimensioned slightly smaller than this thin film 130 of this mask 130, for 880mm*716mm.
Step S4, it is provided that lens module 140, this lens module 140 is arranged between this mask 130 and this substrate 110, and for being amplified the opening 131 of this mask 130, thus the light of this exposure light source 120 is exaggerated via after this opening 131 and this lens module 140.
See also the planar structure schematic diagram that Fig. 2, Fig. 2 are this lens modules 140.This lens module 140 includes that multiple lens element 141, the plurality of lens element 141 are arranged in first row and second row, and wherein, the position between adjacent two lens elements 141 of the corresponding first row of the lens element 141 of this second row is arranged.Specifically, the flat shape of each lens element 141 can be trapezoidal.This lens element 141 can be according to being actually needed design to the amplification of object, in present embodiment, this lens element 141 is 1.05 times to the amplification of opening, i.e. the plane projection 142 of this lens element 141 is 1.05 times of this lens element 141 physical plane area.Wherein, this mask 130, this lens module 140 and this substrate 110 can be almost parallel.
Step S5, control this substrate 110 to move with mask 130 X the most in the first direction, the light that exposure light source 120 is sent sequentially is irradiated on the first area 111 of this thin film 115 via opening 131, this lens module 140 of this mask 130, and then this first area 115 completes exposure and is patterned, wherein the movement velocity of this substrate 110 is more than the movement velocity of this mask 130.Preferably, in this step S5, this exposure light source 120 remains stationary as.
See also the floor map that Fig. 3, Fig. 3 are each steps of this first area 111 exposure.In figure (a), the left side being positioned at this lens element 141 of this mask 130, and the right edge of this mask 130 aligns with the left side of this lens element 141.The plane projection 142 of this lens element 141 is slightly larger than this lens element 141, and this first area 111 is positioned at the left side of the plane projection of this lens element 141, and the right edge of this first area 111 is alignd with the left side of the plane projection 142 of this lens element 141.
In figure (b), control this mask 130 to move along this first direction X with this first area 111 simultaneously, the light that this exposure light source 120 sends sequentially is irradiated on the first area 111 of this thin film 115 via opening 131, this lens module 140 of this mask 130, the right part making this first area 111 is gradually patterned, i.e. have on this first area 111 and be exposed the exposure area that light source is irradiated to, and be not exposed the unexposed area that light source irradiates.Wherein, the movement velocity of this first area 111 is more than the movement velocity of this mask 130.
In figure (c), continue to move along this first direction X in this mask 130 and this first area 111, the light that this exposure light source 120 sends sequentially is irradiated on the first area 111 of this thin film 115 via opening 131, this lens module 140 of this mask 130, the left part making this first area 111 is gradually patterned, i.e. have on this first area 111 and be exposed the exposure area that light source 120 is irradiated to, and be not exposed the unexposed area that light source irradiates.Wherein, the movement velocity of this first area 111 is more than the movement velocity of this mask 130.
In figure (d), until the right edge of this mask 130 left side and this lens element 141 of moving to this mask 130 is alignd, this first area 111 also moves into the left side of this first area 111 and aligns with the right edge of the plane projection 142 of this lens element 141 simultaneously, this first area, first area 111 i.e. forms the pattern on this mask 130, i.e. there is the exposure area (region of PP as shown) being exposed light source and being irradiated to, and be not exposed the unexposed area that light source irradiates.
Step S6, control this substrate 110 to move the most in a second direction with this mask 130, the light that exposure light source 120 is sent sequentially is irradiated on the second area 112 of this thin film 115 via opening 131, this lens module 140 of this mask 130, and then this second area 112 completes exposure and is patterned, wherein the movement velocity of this substrate 110 is more than the movement velocity of this mask 130.Wherein this second direction is preferably identical with this first direction X.The process of concrete this second area 112 exposure is essentially identical with the process that this first area 111 exposes, and refers to each step explanation of Fig. 3 and first area 111, the most just repeats no more the process of this second area 112 exposure.
Step S7, control this substrate 110 all to move along third direction with this mask 130, the light that exposure light source 120 is sent sequentially is irradiated on the 3rd region 113 of this thin film 115 via opening 131, this lens module 140 of this mask 130, and then the 3rd region 113 complete exposure and be patterned, wherein the movement velocity of this substrate 110 is more than the movement velocity of this mask 130.This third direction is preferably identical with this first direction X.The process of concrete 3rd region 113 exposure is essentially identical with the process that this first area 111 exposes, and refers to each step explanation of Fig. 3 and first area 111, the most just repeats no more the process of the 3rd region 113 exposure.
Step S8, control this substrate 110 all to move along fourth direction with this mask 130, the light that exposure light source 120 is sent sequentially is irradiated on the 4th region 114 of this thin film 115 via opening 131, this lens module 140 of this mask 130, and then the 4th region 114 complete exposure and be patterned, wherein the movement velocity of this substrate 110 is more than the movement velocity of this mask 130.This fourth direction is preferably identical with this first direction X.The process of concrete 4th region 114 exposure is essentially identical with the process that this first area 111 exposes, and refers to each step explanation of Fig. 3 and first area 111, the most just repeats no more the process of the 4th region 114 exposure.
After step S1 to S8 completes, four regions 111,112,113,114 of the thin film 115 on this substrate 110 all complete exposure and are patterned, and so far the exposure manufacture process of the thin film 115 on this substrate 110 completes, and this exposure method completes.
Compared with prior art, in the exposure method that this case provides, mask 130 opening 131 pattern is amplified by lens module 140, and control the movement velocity movement velocity more than this mask 130 of substrate 110, the exposure area making four regions 111,112,113,114 increases, thus interval region adjacent area 111,112,113,114 between can be reduced or eliminated, more improve the utilization rate of substrate 110.
Refer to the exposure process schematic diagram that Fig. 4, Fig. 4 are exposure method the second embodiments of the present invention.This exposure method comprises the steps:
Step S1, it is provided that substrate 210, this substrate 210 is formed thin film 215 to be patterned, and this thin film 215 includes first area 211 and second area 212.This substrate 210 can be transparency carrier, and such as glass substrate, this thin film 215 is formed at the upper surface of this substrate 210, and in change embodiment, this thin film 215 can also be formed at the lower surface of this substrate 210.This substrate 210 and this thin film 215 are rectangle, and size can be essentially identical, and specifically, in present embodiment, the size of this thin film 215 is 1850mm*1500mm.This first, second region 211,212 can be equivalently-sized rectangular area, and the size in the most each region 211,212 can be 1850mm*750mm.Specifically, in present embodiment, this first area 2112 and this neighbouring setting of second area 212.
Step S2, it is provided that exposure light source 220, is arranged at the side of this substrate 210.
Specifically, this exposure light source 220 is preferably disposed on the side, surface being formed with this thin film 215 of this substrate 210, certainly, in change embodiment, when this substrate 210 is transparency carrier, this exposure light source 220 can also be arranged at the side that the surface being formed with this thin film 215 of this substrate 210 is contrary so that this thin film 215 can be exposed by exposure light source 220 via this transparency carrier.
Step S3, it is provided that mask 230, is arranged between this exposure light source 220 and substrate 210, and this mask 230 has the opening 231 of patterning.
Being appreciated that the light that this opening 231 can allow exposure light source 220 send passes through, the light that this mask 230 other parts in addition to this opening 231 then stop this exposure light source 220 to send passes through.The patterning opening 231 of this mask 230 can design according to demand.In present embodiment, the size in each region 211,212 being smaller in size than this thin film 215 of this mask 230, for 880mm*716mm.
Step S4, it is provided that lens module 240, this lens module 240 is arranged between this mask 230 and this substrate 210, and for being amplified the opening 231 of this mask 230, thus the light of this exposure light source 220 is exaggerated via after this opening 231 and this lens module 240.
This lens module 240 also includes multiple lens element, as in figure 2 it is shown, the plurality of lens element is arranged in first row and second row, wherein, the position between adjacent two lens elements of the lens element correspondence first row of this second row is arranged.Specifically, the flat shape of each lens element can be trapezoidal.This lens element can be according to being actually needed design to the amplification of object, in present embodiment, this lens element is slightly larger than twice to the amplification in the first direction of opening 231, such as 2.1 times, this lens element is about 1.05 times to the amplification along the direction of this first direction vertical of opening 231.Wherein, this mask 230, this lens module 240 and this substrate 210 can be almost parallel.
Step S5, control this substrate 210 to move with mask 230 X the most in the first direction, the light that exposure light source 220 is sent sequentially is irradiated on the first area 211 of this thin film 215 via opening 231, this lens module 240 of this mask 230, and then this first area 211 completes exposure and is patterned, wherein the movement velocity of this substrate 210 is more than the movement velocity of this mask 230.Preferably, in this step S5, this exposure light source 220 remains stationary as.Being appreciated that in this embodiment, this first area 211 is gradually exposed along the direction from right side to left side, and its principle is similar with the exposure principle steps of the first area 111 shown in Fig. 3 in the first embodiment, the most just repeats no more.
Step S6, control this substrate 210 to move the most in a second direction with this mask 230, the light that exposure light source 220 is sent sequentially is irradiated on the second area 212 of this thin film 215 via opening 231, this lens module 240 of this mask 230, and then this second area 212 completes exposure and is patterned, wherein the movement velocity of this substrate 210 is more than the movement velocity of this mask 230.Wherein this second direction is preferably identical with this first direction X.Being appreciated that in this embodiment, this second area is gradually exposed along the direction from right side to left side, and its principle is similar with the exposure principle steps of the first area 111 shown in Fig. 3 in the first embodiment, the most just repeats no more.
After step S1 to S6 completes, two regions 211,212 of the thin film 215 on this substrate 210 all complete exposure and are patterned, and so far the exposure manufacture process of the thin film 215 on this substrate 210 completes, and this exposure method completes.
Compared with prior art, in the exposure method that this case provides, mask open pattern is amplified by lens module 240, and control the movement velocity twice more than the movement velocity of this mask 230 of substrate 210, first area 211 is increased with the exposure area of this second area 212, interval region this first area 211 and this second area 212 between not only can be reduced or eliminated, it is also possible to reduce the number of times of scan exposure, more improve the utilization rate of substrate.
Claims (10)
1. an exposure method, is used for forming patterned film, and it comprises the steps:
Thering is provided substrate, this substrate is formed thin film to be patterned, this thin film includes first area and second area；
Exposure light source is provided, is arranged at the side of this substrate；
Thering is provided mask, be arranged between this exposure light source and substrate, this mask has the opening of patterning；
Thering is provided lens module, this lens module is arranged between this mask and this substrate, for being amplified the opening of this mask；
Control this substrate to move the most in the first direction with mask, the light that exposure light source is sent sequentially is irradiated on the first area of this thin film via opening, this lens module of this mask, and then this first area completes exposure and is patterned, wherein the movement velocity of this substrate is more than the movement velocity of this mask；
Control this substrate to move the most in a second direction with this mask, the light that exposure light source is sent sequentially is irradiated on the second area of this thin film via opening, this lens module of this mask, and then this second area completes exposure and is patterned, wherein the movement velocity of this substrate is more than the movement velocity of this mask.
2. exposure method as claimed in claim 1, it is characterised in that this first direction is identical with this second direction.
3. exposure method as claimed in claim 1, it is characterised in that this thin film also includes the 3rd region and the 4th region, and this exposure method also comprises the steps:
Control this substrate all to move along third direction with this mask, the light that exposure light source is sent sequentially is irradiated on the 3rd region of this thin film via opening, this lens module of this mask, and then the 3rd region complete exposure and be patterned, wherein the movement velocity of this substrate is more than the movement velocity of this mask；
Control this substrate all to move along fourth direction with this mask, the light that exposure light source is sent sequentially is irradiated on the 4th region of this thin film via opening, this lens module of this mask, and then the 4th region complete exposure and be patterned, wherein the movement velocity of this substrate is more than the movement velocity of this mask.
Exposure method the most according to claim 3, it is characterised in that this third direction is identical with this fourth direction.
Exposure method the most according to claim 3, it is characterized in that, this first, second, third and the 4th region be rectangular area, wherein this first area is adjacent with this second area and the 3rd region, 4th region is adjacent with this second area and the 3rd region, this first area is arranged with the 4th diagonal angle, region, and this second area is arranged with the 3rd diagonal angle, region.
Exposure method the most according to claim 5, it is characterised in that this substrate and this thin film are rectangle, the size of this thin film is 1850mm*1500mm, and the size of this mask is 880mm*716mm, and this lens module is 1.05 times to the amplification of this opening.
7. exposure method as claimed in claim 1, it is characterised in that this first area and this second area are rectangle, and this first area is disposed adjacent with this second area, and wherein the movement velocity of this substrate is more than the twice of the movement velocity of this mask.
Exposure method the most according to claim 7, it is characterised in that this substrate and this thin film are rectangle, the size of this thin film is 1850mm*1500mm, and the size of this mask is 880mm*716mm.
9. exposure method as claimed in claim 1, it is characterized in that, this lens module includes that multiple lens element, the plurality of lens element are arranged in first row and second row, wherein, the position between adjacent two lens elements of the lens element correspondence first row of this second row is arranged.
10. exposure method as claimed in claim 1, it is characterised in that the flat shape of each lens element is trapezoidal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510241600.1A CN106292187A (en) | 2015-05-13 | 2015-05-13 | Exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510241600.1A CN106292187A (en) | 2015-05-13 | 2015-05-13 | Exposure method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106292187A true CN106292187A (en) | 2017-01-04 |
Family
ID=57632168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510241600.1A Pending CN106292187A (en) | 2015-05-13 | 2015-05-13 | Exposure method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106292187A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109270696A (en) * | 2018-11-08 | 2019-01-25 | 宁波维真显示科技股份有限公司 | The preparation method of 3D film |
| WO2019080819A1 (en) * | 2017-10-23 | 2019-05-02 | 上海必修福企业管理有限公司 | Light generation method and system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5822043A (en) * | 1993-11-05 | 1998-10-13 | Canon Kabushiki Kaisha | Exposure method and projection exposure apparatus using the same |
| US20010003028A1 (en) * | 1997-09-19 | 2001-06-07 | Nikon Corporation | Scanning Exposure Method |
| CN1450406A (en) * | 2002-03-25 | 2003-10-22 | Asml蒙片工具有限公司 | Method and apparatus for definiting mask pattern by doubling space frequency technology |
| CN1450411A (en) * | 2002-03-25 | 2003-10-22 | Asml蒙片工具有限公司 | Method and apparatus for porforming rule-based gate shrink utilizing dipole illumination |
| CN101122735A (en) * | 2006-08-11 | 2008-02-13 | 尔必达存储器株式会社 | Photomask, exposing method and instrument, image manufacturing and forming method, and semiconductor device |
| CN103728860A (en) * | 2012-10-10 | 2014-04-16 | 富士施乐株式会社 | Exposure apparatus and image forming apparatus |
| CN104011597A (en) * | 2011-12-20 | 2014-08-27 | 株式会社尼康 | Substrate Processing Device, Device Manufacturing System And Device Manufacturing Method |
| CN104246618A (en) * | 2012-04-19 | 2014-12-24 | 株式会社尼康 | Mask unit and substrate processing device |
-
2015
- 2015-05-13 CN CN201510241600.1A patent/CN106292187A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5822043A (en) * | 1993-11-05 | 1998-10-13 | Canon Kabushiki Kaisha | Exposure method and projection exposure apparatus using the same |
| US20010003028A1 (en) * | 1997-09-19 | 2001-06-07 | Nikon Corporation | Scanning Exposure Method |
| CN1450406A (en) * | 2002-03-25 | 2003-10-22 | Asml蒙片工具有限公司 | Method and apparatus for definiting mask pattern by doubling space frequency technology |
| CN1450411A (en) * | 2002-03-25 | 2003-10-22 | Asml蒙片工具有限公司 | Method and apparatus for porforming rule-based gate shrink utilizing dipole illumination |
| CN101122735A (en) * | 2006-08-11 | 2008-02-13 | 尔必达存储器株式会社 | Photomask, exposing method and instrument, image manufacturing and forming method, and semiconductor device |
| CN104011597A (en) * | 2011-12-20 | 2014-08-27 | 株式会社尼康 | Substrate Processing Device, Device Manufacturing System And Device Manufacturing Method |
| CN104246618A (en) * | 2012-04-19 | 2014-12-24 | 株式会社尼康 | Mask unit and substrate processing device |
| CN103728860A (en) * | 2012-10-10 | 2014-04-16 | 富士施乐株式会社 | Exposure apparatus and image forming apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019080819A1 (en) * | 2017-10-23 | 2019-05-02 | 上海必修福企业管理有限公司 | Light generation method and system |
| US11281105B2 (en) | 2017-10-23 | 2022-03-22 | Shanghai Bixiufu Enterprise Management Co., Ltd. | Light generation method and system |
| CN109270696A (en) * | 2018-11-08 | 2019-01-25 | 宁波维真显示科技股份有限公司 | The preparation method of 3D film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10241361B2 (en) | Color film substrate, manufacturing method thereof and display device | |
| JP5294488B2 (en) | Exposure equipment | |
| CN101460897B (en) | Exposure method and exposure apparatus | |
| CN104808451A (en) | Alignment exposure method | |
| CN103415810B (en) | Exposure device | |
| US20180052395A1 (en) | Exposure method, substrate and exposure apparatus | |
| US9632366B2 (en) | Mask and method of manufacturing photoresist spacers with the mask | |
| TWI660246B (en) | Drawing device | |
| CN202372754U (en) | Exposure machine and exposure system | |
| CN102096328B (en) | Exposure procedure of liquid crystal panels and mask | |
| CN104281014A (en) | Mask plate, exposure equipment and preparation method of ultraviolet mask substrate | |
| CN101986206A (en) | Method for utilizing functional mask board to manufacture mask substrate for solidifying sealing glue | |
| US20170194139A1 (en) | Photo mask and exposure system | |
| CN102103332A (en) | High-speed digital scanning direct write photoetching device | |
| CN103984202A (en) | Masking plate and color film substrate manufacturing method | |
| CN106292187A (en) | Exposure method | |
| JP5210052B2 (en) | Manufacturing method of semiconductor device | |
| JP2012008427A (en) | Exposure device | |
| CN104503144B (en) | A kind of liquid crystal display substrate | |
| CN105204235A (en) | Transfer printing plate as well as manufacturing method and transfer printing method thereof | |
| KR102179033B1 (en) | Photomask for photo-alignment and photo-alignment method | |
| US8497061B2 (en) | Method for replicating production of 3D parallax barrier | |
| US9207546B2 (en) | Exposure method and exposure apparatus | |
| CN104950582A (en) | Edge exposure system and edge exposure method | |
| JP2011175025A (en) | Proximity scanning exposure apparatus and method for manufacturing substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170104 |
|
| RJ01 | Rejection of invention patent application after publication |