CN102472987A - Exposure apparatus, exposure method, and device manufacturing method - Google Patents
Exposure apparatus, exposure method, and device manufacturing method Download PDFInfo
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- CN102472987A CN102472987A CN2010800340183A CN201080034018A CN102472987A CN 102472987 A CN102472987 A CN 102472987A CN 2010800340183 A CN2010800340183 A CN 2010800340183A CN 201080034018 A CN201080034018 A CN 201080034018A CN 102472987 A CN102472987 A CN 102472987A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/703—Gap setting, e.g. in proximity printer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Disclosed is an exposure apparatus which exposes a substrate. The exposure apparatus is provided with: a stage which has a placing section having the substrate placed thereon and moves; a detection unit, which is provided on the stage, and detects the substrate portion at a position in a predetermined region of the placing section; and a control unit which drive-controls the stage, on the basis of the detection results obtained from the detection unit.
Description
Technical field
The invention relates to a kind of exposure device, exposure method and element (device) manufacturing approach.
Background technology
For example in the manufacturing step of the electronic component of flat-panel monitor (plat panel display) etc., use just like the exposing light beam that following patent documentation disclosed and come exposure device that substrate is made public with via mask (mask).This exposure device comprises and is keeping mask and mask platform (mask stage) and keeping substrate and substrate stage movably movably.
In aforesaid exposure device, substrate is remained in after the substrate stage, carry out the aligning (alignment) of substrate and handle.In registration process, the alignment mark (alignment mark) that is arranged at substrate is detected, come the driving substrate platform based on testing result.The test section of alignment mark and the position between the projection optical system are essential fixing.For example, following technology is known: test section is fixed in projection optical system, when detecting alignment mark, substrate stage is moved.
[look-ahead technique document]
[patent documentation]
The early stage disclosed spy of [patent documentation 1] Jap.P. opens the 2006-195353 communique
Yet, for above-mentioned formation, for example when the many places in substrate are provided with alignment mark,, substrate stage is moved for these alignment marks are detected.If when carrying out registration process, substrate stage is moved, then can cause registration process to expend time in, therefore, in the aspect existing problems that production capacity (throughput) is improved.
Summary of the invention
The purpose of form of the present invention is to provide a kind of exposure device, exposure method and manufacturing method that production capacity is improved.
According to the 1st form of the present invention, a kind of exposure device is provided, it is the exposure device that substrate is made public, and comprising: platform has to carry and is equipped with carrying of aforesaid substrate and puts portion and move; Test section is arranged at above-mentioned platform, and the regional part of the regulation that is positioned at the portion of putting this year of carrying the aforesaid substrate that places the portion of putting in above-mentioned year is detected; And control part, come above-mentioned platform is carried out drive controlling based on the testing result of above-mentioned test section.
According to the 2nd form of the present invention, a kind of exposure method is provided, it is the exposure method that substrate is made public, and comprising: carry and put step (step), aforesaid substrate is carried the portion of putting of carrying that places platform; Detect step, use the test section that is arranged at above-mentioned platform, the regional part of the regulation that is positioned at the portion of putting in above-mentioned year in the aforesaid substrate is detected; And the drive controlling step, come above-mentioned platform is carried out drive controlling based on the testing result of above-mentioned test section.
According to the 3rd form of the present invention, a kind of manufacturing method is provided, comprise following step: use exposure device of the present invention, the aforesaid substrate that is coated with emulsion is made public, (pattern) is transferred to this substrate with pattern; Make by above-mentioned step of exposure through the above-mentioned emulsion development of exposure, formation and above-mentioned pattern corresponding exposure patterned layer; And come aforesaid substrate is processed via above-mentioned exposing patterns layer.
[effect of invention]
According to the present invention, production capacity is improved.
Description of drawings
Fig. 1 is the summary pie graph of an example of the exposure device of expression the present invention the 1st example.
Fig. 2 be the expression this example exposure device one the example stereographic map.
Fig. 3 be the expression this example illuminator one the example figure.
Fig. 4 is the figure of an example of optical projection system and the substrate stage of this example of expression.
Fig. 5 be the expression this example back side alignment system one the example figure.
Fig. 6 is the figure of an example of position relation of field of illumination, surveyed area and the mask of this example of expression.
Fig. 7 is view field, surveyed area, and the figure of an example of the position relation of substrate of this example of expression.
Fig. 8 be the expression this example exposure method one the example process flow diagram.
Fig. 9 A be the expression this example exposure device action one the example figure.
Fig. 9 B be the expression this example exposure device action one the example figure.
Figure 10 is the action diagram of the exposure device of this example of expression.
Figure 11 A is the action diagram of the exposure device of this example of expression.
Figure 11 B is the action diagram of the exposure device of this example of expression.
The action diagram of the exposure device of this example of Figure 12.
Figure 13 is the stereographic map of an example of the exposure device of expression the present invention the 2nd example.
Figure 14 is the figure of other formations of expression exposure device of the present invention.
Figure 15 A is the figure of other formations of expression exposure device of the present invention.
Figure 15 B is the figure of other formations of expression exposure device of the present invention.
Figure 16 is the figure of other formations of expression exposure device of the present invention.
Figure 17 is the figure of other formations of expression exposure device of the present invention.
Figure 18 is the process flow diagram that describes in order to the example to the manufacturing step of micro element.
Embodiment
Below, with reference to graphic example of the present invention is described.In following explanation, set the XYZ orthogonal coordinate system, with reference to this XYZ orthogonal coordinate system, the position relation to each member describes simultaneously.Prescribed direction in the surface level is made as X-direction, the direction with the X-direction quadrature in the surface level is made as Y direction, will be made as Z-direction with the direction (that is vertical) of X-direction and Y direction difference quadrature.To be made as θ X, θ Y and θ Z direction respectively around rotation (inclination) direction of X axle, Y axle and Z axle again.
[the 1st example]
The 1st example of the present invention is described.
Fig. 1 be the expression this example exposure device EX one the example the summary pie graph, Fig. 2 is a stereographic map.In Fig. 1 and Fig. 2, exposure device EX comprises: keeping mask M and movably mask platform 1, keeping substrate P and movably the optical projection system PS of image projecting to the substrate P of the pattern of substrate stage 2, the illuminator IS that makes drive system (system) 3 that mask platform 1 moves, makes drive system 4 that substrate stage 2 moves, comes mask M is thrown light on exposing light beam EL, mask M that exposing light beam EL is thrown light on and the control device 5 that whole action is controlled to exposure device EX.
Mask M comprises main mask (reticle), and this main mask is formed with the element pattern that is projected to substrate P.Substrate P comprise glass plate (glass plate) for example etc. base material, be formed at the light-sensitive surface (emulsion that is coated with) on this base material.In this example, substrate P comprises large-scale glass plate, and the size on one side of this substrate P (size) for example is more than the 500mm.In this example, Yi Bian use the base material of the glass plate of the rectangle that is about 3000mm as substrate P.Mask M-face of Z side, be provided with baseline (base line) amount measuring mark Ma (with reference to Fig. 4).
Again, the exposure device EX of this example comprises: the interferometer system 6 that the location information of mask platform 1 and substrate stage 2 is measured, the 1st detection system 7 that the location information on the surface of mask M is detected, the 2nd detection system 8 that the location information on the surface of substrate P is detected, the back side alignment system 60 that comes surperficial alignment system 40 that the alignment mark to substrate P detects and come the alignment mark to substrate P to detect from rear side from face side.
Again, exposure device EX comprises main body (body) 13.This main body 13 for example comprises: be disposed at the last base plate (base plate) 10 of seating surface (for example ground) FL in the dust free room (clean room) across vibrationproof platform BL, be disposed at the 1st rail post (column) 11 on this base plate 10 and be disposed at the 2nd rail post 12 on the 1st rail post 11.In this example, main body 13 is being supported optical projection system PS, mask platform 1 and substrate stage 2 respectively.In this example, optical projection system PS props up via price fixing 14 and is held in the 1st rail post 11.Mask platform 1 is supported with respect to the 2nd rail post 12 movably.Substrate stage 2 is supported with respect to base plate 10 movably.
In this example, optical projection system PS comprises a plurality of projection optical systems.Illuminator IS comprises and the corresponding a plurality of lighting modules of a plurality of projection optical systems (module).Again, the exposure device EX of this example simultaneously makes mask M and the substrate P same moved further in direction of scanning towards regulation, one side with the image projecting of the pattern of mask M to substrate P.That is the exposure device EX of this example is so-called poly-lens (multi lens) type scanning (scan) exposure device.
In this example, optical projection system PS comprises seven projection optical system PL1～PL7, and illuminator LS comprises seven lighting module IL1～IL7.Moreover the quantity of projection optical system and lighting module is not limited to seven, and for example optical projection system PS can comprise 11 projection optical systems, and illuminator IS can comprise 11 lighting modules.
Illuminator IS can expose to exposing light beam EL the field of illumination IR1～IR7 of regulation.This field of illumination IR1～IR7 is contained in the irradiation area of the exposing light beam EL that penetrates from each lighting module IL1～IL7.In this example, illuminator IS comes to be thrown light in each zone of seven different field of illumination IR1～IR7 with exposing light beam EL.Illuminator IS comes the part that is disposed at field of illumination IR1～IR7 among the mask M is thrown light on the exposing light beam EL of the Illumination Distribution of homogeneous.In this example,, for example use the spectral line of emission (emission line) (g line, h line, i line) that penetrates from mercury vapor lamp (mercury lamp) as the exposing light beam EL that penetrates from illuminator IS.
Mask platform 1 can move with respect to field of illumination IR1～IR7 under the state that is keeping mask M.This mask platform 1 comprises the mask maintaining part 15 that can keep mask M.
Optical projection system PS can expose to exposing light beam EL the PR1～PR7 of view field of regulation.PR1～the PR7 of this view field is equivalent to the irradiation area from the exposing light beam EL of each projection optical system PL1～PL7 ejaculation.In this example, in each zone of seven PR1～PR7 of view field that optical projection system PS is extremely different with the image projecting of pattern.Optical projection system PS is with the projection multiplying power of regulation, with the part that is disposed at the PR1～PR7 of view field in image projecting to the substrate P of the pattern of mask M.
Fig. 3 be the expression this example illuminator IS one the example the summary pie graph.In Fig. 3, illuminator IS comprises: the light source 17 that constitutes by extra-high-pressure mercury vapour lamp, the oval shape mirror 18 that will reflect, the dichronic mirror (dichroic mirror) 19 that will reflect from least a portion of the light of this oval shape mirror 18 from the light that this light source 17 penetrates, can be with shutter (shutter) device of blocking from advancing of the light of this dichronic mirror 19 20, the light element (light guide unit) 23 that comprises interference light filter (interference filter) 22 that the light that from relaying (relay) optical system 21 of collimation lens (collimated lens) 21A of the light institute incident of dichronic mirror 19 and light collecting lens 21B, only makes the provision wavelengths zone passes through and will give branch and be supplied to each module of a plurality of lighting module IL1～IL7 from the light of relay optical system 21.
Moreover in Fig. 3, only expression has the 1st lighting module IL1 among the 1st～the 7th lighting module IL1～IL7.The the 2nd～the 7th lighting module IL2～IL7 is and the equal formation of the 1st lighting module IL1.In following explanation, mainly the 1st lighting module IL1 among the 1st～the 7th lighting module IL1～IL7 is described, will give simple or omission with the relevant explanation of the 2nd～the 7th lighting module IL2～IL7.
Be incident to the incident end 24 of light element 23 from the light of relaying (relay) optical system 21, then penetrate from a plurality of ejecting end 25A～25G.The 1st lighting module IL1 comprises: can be with the shutter device of blocking from advancing of the light of ejecting end 25A 26, supply with collimation lens 27, the compound eye integrator (fly eye integrator) 28 of supplying with the light that has self-focus lens 27 that has from the light of ejecting end 25A and supply with the collector lens (condenser lens) 29 from the light of compound eye integrator 28 is arranged.The exposing light beam EL that penetrates from this collector lens 29 exposes to field of illumination IR1.The 1st lighting module IL1 comes illumination area I R1 to throw light on the exposing light beam EL of the Illumination Distribution of homogeneous.
The the 2nd～the 7th lighting module IL2～IL7 is and the equal formation of the 1st lighting module IL1.Each module of the 2nd～the 7th lighting module IL2～IL7 comes each field of illumination IR2～IR7 is thrown light on the exposing light beam EL of the Illumination Distribution of homogeneous.Illuminator IS comes at least a portion of the mask M that is disposed at field of illumination IR1～IR7 is thrown light on the exposing light beam EL of the Illumination Distribution of homogeneous.
Fig. 4 is the figure of an example of optical projection system PS, the 1st detection system the 7, the 2nd detection system 8, surperficial alignment system 40, back side alignment system 60 of this example of expression and the substrate stage 2 that is disposed at the PR1～PR7 of view field.
At first, the 1st projection optical system PL1 is described.In Fig. 4, the image projecting of the pattern of the mask M that the 1st projection optical system PL1 will be thrown light on exposing light beam EL by the 1st lighting module IL1 is to substrate P.The 1st projection optical system PL1 comprises: image planes adjustment part 33, displacement (shift) adjustment part 34, two groups of reflection-refraction type optical systems 31,32, field stop (visual field diaphragm) 35 and multiplying power (scaling) adjustment parts 36.
The exposing light beam EL that exposes to field of illumination IR1 and see through mask M is incident to image planes adjustment part 33.This image planes adjustment part 33 can be adjusted the position (with the position of Z axle, θ X and θ Y directional correlation) of the image plane of the 1st projection optical system PL1.Image planes adjustment part 33 is disposed at and mask M and the substrate P position of optical conjugate roughly.Image planes adjustment part 33 comprises: the 1st optical component 33A and the 2nd optical component 33B and can make the 1st optical component 33A with respect to the 2nd optical component 33B and mobile drive unit (not shown).The 1st optical component 33A and the 2nd optical component 33B be by gas bearing, across predetermined gap (gap) and in opposite directions.The 1st optical component 33A and the 2nd optical component 33B be for can make the glass plate of exposing light beam EL transmission, and have wedge shape respectively.Control device 5 makes the drive unit start, and the position of the 1st optical component 33A and the 2nd optical component 33B relation is adjusted, and by this, can adjust the position of the image plane of the 1st projection optical system PL1.Exposing light beam EL through image planes adjustment part 33 is incident to displacement adjustment part 34.
Field stop 35 is disposed at the position of the intermediary image of reflection-refraction type optical system 31 formed patterns.Field stop 35 is stipulated the PR1 of view field.In this example, field stop 35 is defined as trapezoidal shape with the PR1 of view field on the substrate P.Exposing light beam EL through field stop 35 is incident to second group of reflection-refraction type optical system 32.
Reflection-refraction type optical system 32 is to constitute with reflection-refraction type optical system 31 identical modes.The exposing light beam EL that penetrates from this reflection-refraction type optical system 32 is incident to multiplying power adjustment part 36.This multiplying power adjustment part 36 can be adjusted the multiplying power (scaling) of the image of the pattern of mask M.Exposing light beam EL via multiplying power adjustment part 36 exposes to substrate P.In this example, the 1st projection optical system PL1 with erect image etc. doubly with the image projecting of the pattern of mask M to substrate P.
By above-mentioned image plane adjustment part 33, displacement adjustment part 34 and multiplying power adjustment part 36, constitute the imaging characteristic adjusting gear 30 that the imaging characteristic (optical characteristics) of the 1st projection optical system PL1 is adjusted.This imaging characteristic adjusting gear 30 can be adjusted the position of the image plane of the 1st projection optical system PL1 relevant with X axle, Y axle, Z axle, θ X, θ Y and this six direction of θ Z direction, and can adjust the multiplying power of the image of pattern.
More than, the 1st projection optical system PL1 is illustrated.The the 2nd～the 7th projection optical system PL2～PL7 has the equal formation with the 1st projection optical system PL1.Omit and the relevant explanation of the 2nd～the 7th projection optical system PL2～PL7.
Like Fig. 2 and shown in Figure 4, be positioned at substrate maintaining part 16+upper surface of the substrate stage 2 of X side disposes reference feature 43.The upper surface 44 of this reference feature 43 is disposed at and remains in the surperficial roughly the same plane of substrate P of substrate maintaining part 16.At the upper surface 44 of reference feature 43, dispose the transmissive portions 45 that exposing light beam EL is seen through again.Below reference feature 43, dispose the infrared rays receiver 46 that can receive through the light of transmissive portions 45.This infrared rays receiver 46 comprises: via the lens combination 47 of the light institute incident of transmissive portions 45 and receive the OPTICAL SENSORS (opticals ensor) 48 via the light of lens combination 47.In this example, OPTICAL SENSORS 48 comprises photographic element (charge-coupled image sensor (Charge Coupled Device, CCD)).OPTICAL SENSORS 48 will export control device 5 to the corresponding signal of the light that is received.
Again, be positioned at substrate maintaining part 16-upper surface of the substrate stage 2 of X side, dispose the optical component 50 that comprises transmissive portions 49.Below this optical component 50, dispose the infrared rays receiver 51 that can receive through the light of transmissive portions 49.This infrared rays receiver 51 comprises: via the lens combination 52 of the light institute incident of transmissive portions 49 and receive the OPTICAL SENSORS 53 via the light of lens combination 52.This OPTICAL SENSORS 53 will export control device 5 to the corresponding signal of the light that is received.
Then, interferometer system the 6, the 1st detection system the 7, the 2nd detection system 8, surperficial alignment system 40 and back side alignment system 60 are described.In Fig. 1 and Fig. 2, interferometer system 6 comprises: laser (laser) interferometer unit 6A that the location information of mask platform 1 is measured and the laser interferometer unit 6B that the location information of substrate stage 2 is measured.Laser interferometer unit 6A can use the measurement mirror 1R that is disposed at mask platform 1 to come the location information of mask platform 1 is measured.
The position of the Z-direction of the lower surface (pattern formation face) of 7 couples of mask M of the 1st detection system is detected.The 1st detection system 7 is multi-spot leveling (focus leveling) detection system of so-called oblique incidence mode; As shown in Figure 4, the 1st detection system 7 comprises a plurality of detecting device 7A～7F that dispose in opposite directions with the lower surface that remains in the mask M of mask platform 1.Detecting device 7A～7F comprises respectively: will detect the projection portion of rayed to the surveyed area of regulation and can receive the light accepting part from the detection light of the lower surface of the mask M that is disposed at surveyed area.
The position of the Z-direction on the surface (plane of exposure) of 8 pairs of substrate P of the 2nd detection system is detected.The 2nd detection system 8 is the multi-spot leveling detection system of so-called oblique incidence mode, and is as shown in Figure 4, and the 2nd detection system 8 comprises a plurality of detecting device 8A～8H that dispose in opposite directions with the surface that remains in the substrate P of substrate stage 2.Detecting device 8A～8H comprises respectively: will detect the projection portion of rayed to the surveyed area of regulation and can receive the light accepting part from the detection light on the surface of the substrate P that is disposed at above-mentioned surveyed area.
Alignment mark m1～m6 (with reference to Fig. 7 etc.) that 40 pairs of the alignment systems in surface are arranged at substrate P detects.This surface alignment system 40 is so-called alignment system from axle (off axis) mode, and is as shown in Figure 4, and this surface alignment system 40 comprises a plurality of microscope 40A～40F that dispose in opposite directions with the surface that remains in the substrate P of substrate stage 2.Microscope 40A～40F comprises respectively: the light accepting part of optical image that will detect rayed to the projection portion of surveyed area AL1～AL6 and can obtain to be disposed at alignment mark m1～m6 of surveyed area AL1～AL6.
Alignment mark m1～m6 (with reference to Fig. 7 etc.) that 60 pairs of back side alignment systems are arranged at substrate P detects.This back side alignment system 60 likewise is so-called alignment system from the axle mode with surperficial alignment system 40.As shown in Figure 4, this back side alignment system 60 is arranged at the platform body 2A of substrate stage 2, and can from substrate P-face (back side) side of Z side detects alignment mark m1～m6.Again, back side alignment system 60 is owing to being arranged at platform body 2A, so can move integratedly with this substrate stage 2.Back side alignment system 60 is preferably the position different with substrate maintaining part 16 that is arranged in the substrate stage 2.According to this formation, when changing substrate maintaining part 16, need not back side alignment system 60 is unloaded from substrate stage 2, thereby can save the time of when changing substrate maintaining part 16, the position of back side alignment system 60 being set.The influence of the heat that is produced by substrate maintaining part 16 again, also is suppressed.
Back side alignment system 60 is arranged among the platform body 2A+end of X side and-the X side end.Platform body 2A-the X side end, for example be provided with a plurality of (for example four) microscope 60A～60F along the Y direction.Platform body 2A+the X side end, for example be provided with a plurality of (for example four) microscope 60G～60L along the Y direction.
Fig. 5 is the figure of the formation of expression back side alignment system 60.Back side alignment system 60 comprises: penetrate the light source 61 that detects light; Send optical lens system 62 from the detection light institute incident of this light source 61; To send the detection light of optical lens system 62 to guide to the minute surface 63 and 64 of the lower surface of mask M through this; The detection light that this minute surface 63 and 64 is guided is focused to surveyed area (regulation zone) AL11～AL16; The lens 65 of AL21～AL26; To surveyed area AL11～AL16; The lens 66 of the detection light channeling conduct that AL21～AL26 reflected; And above-mentioned microscope 60A～60F of detecting of the detection light that lens 66 are guided; 60G～60L.In surveyed area AL11～AL16, AL21～AL26, for example dispose alignment mark m1～m6.
The formation of back side alignment system 60 shown in Figure 5 for example also can be used as the formation of above-mentioned surperficial alignment system 40.So; Overleaf in the alignment system 60; Light be will detect and surveyed area AL11～AL16, AL21～AL26 will be projected to; In microscope 60A～60F, 60G～60L, receive reflected light, by this, can obtain to be disposed at the optical image of alignment mark m1～m6 of above-mentioned surveyed area AL11～AL16, AL21～AL26.
Fig. 6 is the mode chart of an example of the position relation of expression field of illumination IR1～IR7 and mask M, and expression comprises that the position in the plane of lower surface of mask M concerns.As shown in Figure 6, the lower surface of mask M comprises the figuratum area of the pattern MA of formation.
In this example, each zone of field of illumination IR1～IR7 is trapezoidal shape in the XY plane.In this example; The field of illumination IR1 of lighting module IL1, IL3, IL5, IL7, IR3, IR5, IR7 roughly equally spaced are disposed at Y direction, and the field of illumination IR2 of lighting module IL2, IL4, IL6, IR4, IR6 roughly equally spaced are disposed at Y direction.Field of illumination IR1, IR3, IR5, IR7 are with respect to field of illumination IR2, IR4, IR6 and be disposed at-the X side.On Y direction, between field of illumination IR1, IR3, IR5, IR7, dispose field of illumination IR2, IR4, IR6 again.
Fig. 7 is the mode chart of an example of the position relation between the alignment mark m1～m6 of surveyed area AL11～AL18, substrate P of surveyed area AL1～AL6, the microscope 60A～60L of expression microscope 40A～40F, and expression comprises that the position in the plane on surface of substrate P concerns.
As shown in Figure 7, in this example, the surface of substrate P comprises that projection has a plurality of exposure areas (being processed the zone) PA1～PA6 of image of the pattern of mask M.In this example, the surface of substrate P comprises six exposure area PA1～PA6.Exposure area PA1, PA2, PA3 be with the uniformly-spaced mutually liftoff Y direction that is disposed at roughly, and exposure area PA4, PA5, PA6 are with the uniformly-spaced mutually liftoff Y direction that is disposed at roughly.Exposure area PA1, PA2, PA3 are with respect to exposure area PA4, PA5, PA6 and be disposed at+the X side.
In this example, each zone of the PR1～PR7 of view field is trapezoidal in the XY plane.In this example; The PR1 of view field of projection optical system PL1, PL3, PL5, PL7, PR3, PR5, PR7 roughly equally spaced are disposed at Y direction, and the PR2 of view field of projection optical system PL2, PL4, PL6, PR4, PR6 roughly equally spaced are disposed at Y direction.The PR1 of view field, PR3, PR5, PR7 are with respect to the PR2 of view field, PR4, PR6 and be disposed at-the X side.On Y direction, between the PR1 of view field, PR3, PR5, PR7, dispose the PR2 of view field, PR4, PR6 again.
In this example, surveyed area AL1～AL6 of microscope 40A～40F is disposed at-the X side with respect to the PR1～PR7 of view field.Surveyed area AL1～AL6 is mutually liftoff to be disposed at Y direction.Among a plurality of surveyed area AL1～AL6; Be positioned at the interval of two the surveyed area AL1 and the surveyed area AL6 in the Y direction outside; Be with a plurality of exposure area PA1～PA6 in, be positioned at the Y direction outside two exposure area PA1 (PA4)-edge (edge) of Y side and exposure area PA3 (PA6)+interval at the edge of Y side about equally.
In this example, surveyed area AL11～AL14 of microscope 60A～60F and microscope 60G～60L for example be arranged in respectively on the platform body 2A on the straight line of Y direction.The interval of the interval of surveyed area AL11 and surveyed area AL12 and surveyed area AL15 and surveyed area AL16 equates with the interval of the surveyed area AL3 of microscope 40C with the surveyed area AL1 of microscope 40A respectively.The interval of the interval of surveyed area AL12 and surveyed area AL13 and surveyed area AL16 and surveyed area AL17 equates with the interval of the surveyed area AL4 of microscope 40D with above-mentioned surveyed area AL3 respectively.The interval of the interval of surveyed area AL13 and surveyed area AL14 and surveyed area AL17 and surveyed area AL18 equates with the interval of the surveyed area AL6 of microscope 40F with above-mentioned surveyed area AL4.Therefore, surveyed area AL11～AL14 of microscope 60A～60F, surveyed area AL15～surveyed area AL18 coincide with above-mentioned surveyed area AL1, AL3, AL4, AL6 respectively.
A plurality of alignment mark m1～m6 that surface alignment system 40 and 60 pairs of back side alignment systems are arranged at substrate P detect.In this example, on substrate P, dispose six alignment mark m1～m6 along Y direction is mutually liftoff, the group (group) of these alignment marks m1～m6 is disposed on the X-direction and leaves everywhere mutually.Alignment mark m1, the adjacent ground connection of m2 are arranged at exposure area PA1, PA4 both ends separately; Alignment mark m3, the adjacent ground connection of m4 are arranged at exposure area PA2, PA5 both ends separately, and alignment mark m5, the adjacent ground connection of m6 are arranged at exposure area PA3, PA6 both ends separately.
In this example; With on substrate P along six alignment mark m1～m6 of the mutually liftoff configuration of Y direction accordingly, dispose microscope 40A～40F (surveyed area AL1～AL6), microscope 60A～60F (surveyed area AL11～AL16) and microscope 60G～60L (surveyed area AL21～AL26).It is last that the surveyed area of microscope 40A～40F is set to be disposed at simultaneously alignment mark m1～m6.Four alignment mark m1, m3, m4, m6 that the surveyed area of microscope 60A～60F, microscope 60G～60L is disposed among six alignment mark m1～m6 simultaneously are last.
Then, one side is with reference to the process flow diagram (flow chart) of Fig. 8 and the mode chart of Fig. 9 A～Figure 12, and an example in the face of following method describes, and this method is to use the exposure device EX with above-mentioned formation to come substrate P is made public.
At first, control device 5 is moved into mask M (loading (load)) to mask platform 1 (step S1).Mask M is remained in after the mask platform 1, carry out based on exposure prescription (recipe) and reorganize and outfit (setup) and handle, this is reorganized and outfit to handle and comprises that the registration process of mask M, various measurement processing and calibration (calibration) handle (step S2).In this example; The registration process of mask M comprises following processing: via optical projection system PS and transmissive portions 45; Receive the light of the image of the alignment mark (not shown) that is disposed at mask M by infrared rays receiver 46, the position of the mask M in the XY plane is measured.
Measurement processing for example comprises: use the processing that infrared rays receiver 51 measures the illumination of the exposing light beam EL that penetrates from each projection optical system PL1～PL7 and use at least one processing in the processing that infrared rays receiver 46 measures the imaging characteristic of each projection optical system PL1～PL7.
Again; In measurement processing; Carry out following processing: use surperficial alignment system 40, transmissive portions 45 and infrared rays receiver 46 etc., come the position relation (baseline amount) of projected position of pattern image of surveyed area AL1～AL6 and the mask M of his-and-hers watches face system 40 to measure.When this situation; For example, shown in Fig. 9 A and Fig. 9 B, with exposing light beam illuminating to the mark Ma that is arranged at mask M; To be projected to reference feature 43 via the pattern image of this mark Ma, making 46 pairs of infrared rays receivers is that the pattern image of benchmark detects with reference feature 43.Control device 5 comes the baseline amount is measured based on the testing result in the infrared rays receiver 46.At first, shown in Fig. 9 A, carry out above-mentioned action, then, shown in Fig. 9 B, carry out above-mentioned action by projection optical system PL2, PL4, PL6 by projection optical system PL1, PL3, PL5 and PL7.
Calibration process comprises at least one processing in two following processing, and these two are treated to: use the result of measurement processing to come the processing that the illumination of the exposing light beam EL that penetrates from each lighting module IL1～IL7 is adjusted; And based on using infrared rays receiver 46 to measure the measurement result of the imaging characteristic of gained, the processing of using imaging characteristic adjusting gear 30 that the imaging characteristic of each projection optical system PL1～PL7 is adjusted.
After the registration process of substrate P, begin the exposure (step S5) of each exposure area PA1～PA6.In this exposure-processed, for example control device 5 moves to field of illumination IR1～IR7 with area of the pattern MA, and exposure area PA1～PA3 is moved to the PR1～PR7 of view field, then begins the exposure of each exposure area PA1～PA6.
Below, in same batch (lot), repeat the processing of above-mentioned steps S1～step S6.Same batch of group that comprises a plurality of substrate P that the identical mask M of use makes public.In same at least batch, under identical exposure prescription, carry out exposure.
Then, the alignment mark detection of substrate P contained in the above-mentioned action being handled (step S4) describes.
In the registration process of the substrate P in this example,, use surperficial alignment system 40 and back side alignment system 60 these two systems to detect alignment mark m1～m6 (step S4-1) to the many pieces of initial substrate P of carrying out exposure-processed.
After treatment for correcting, control device 5 makes substrate stage 2 court-X side shiftings, according to from the row of-X side order towards the row of+X side, the 4 row alignment mark m1～m6 that are arranged at substrate P is detected.Shown in Figure 11 A, when the alignment mark m1～m6 that is disposed at the leaning on most of substrate P-X side is detected, use surperficial alignment system 40 and back side alignment system 60 to detect.
Because back side alignment system 60 is arranged at platform body 2A, so be convenient substrate stage 2 when moving, the relative position between this back side alignment system 60 and the substrate P also can not change.Four alignment mark m1, m3, m4, m6 among six alignment mark m1～m6 of 60 pairs of back side alignment systems and each corresponding row of microscope 60A～60F, 60G～60L detect.
This correction for example comprises: obtain the modified value of the testing result of back side alignment system 60, and this modified value is reflected in the testing result of back side alignment system 60 next time.Owing to the drive controlling of the substrate stage 2 of back side alignment system 60, carry out concurrently with the correction of back side alignment system 60, therefore, the time of alignment actions shortens.The correcting result of back side alignment system 60 is for example remembered in memory portion (not shown) of control device 5 etc. in advance.
Lean on most-after the detection of the alignment mark m1～m6 of X side accomplished, control device 5 made further court-X side shifting of substrate stage 2, according to oneself-the X side is towards the order of+X side, uses surperficial alignment system 40 to detect the row of alignment mark m1～m6 individually.Control device 5 when lean on being disposed at most+when the alignment mark m1～m6 of X side detects, shown in Figure 11 B, use surperficial alignment system 40 to detect with back side alignment system 60 these two systems.When this situation, control device 5 is likewise also proofreaied and correct back side alignment system 60 with above-mentioned.
For the substrate P after many pieces of initial substrate P are handled, only use back side alignment system 60 to detect alignment mark m1～m6 (step S4-2) again.
When this situation; For example; Shown in figure 12, control device 5 roughly with substrate P is loaded into substrate stage 2 simultaneously, use back side alignment system 60 to alignment mark m1～m6 of being disposed at the leaning on most of substrate P-X side, detect with the alignment mark m1～m6 that is disposed at the leaning on most of substrate P+X side.
By many pieces of initial substrate P are aimed at, the correction information of back side alignment system 60 is stored and remembers the memory portion in control device 5.Therefore, when carry out later substrate P on time, control device 5 can simultaneously use the information of above-mentioned storage suitably back side alignment system 60 to proofread and correct, one side is carried out above-mentioned detection.
In step S4-2, roughly detect alignment mark m1～m6 simultaneously with substrate P being loaded into substrate stage 2, therefore, control device 5 also can make this substrate stage 2 till the " loaded " position of substrate P moves to exposure position, simultaneously testing result is carried out computing.When this situation, before substrate stage 2 arrives exposure position, carry out computing by control device 5, substrate stage 2 is disposed at the position of having reflected operation result.
After one batch processing finished, M changed with mask.New mask M is loaded into mask platform 1, reorganizes and outfit (setup) and handle, after substrate P was loaded, control device 5 carried out above-mentioned steps S4-1 to many pieces of initial substrate P in step S4, ensuing substrate P is carried out above-mentioned steps S4-2.
So; According to this example; The back side alignment system 60 that detects alignment mark m1～m6 is arranged at substrate stage 2; This alignment mark m1～m6 is arranged in surveyed area AL11～AL16, the AL21～AL26 of the regulation of the substrate P that is loaded into substrate stage 2, is provided with the control device 5 that comes substrate stage 2 is carried out drive controlling based on the testing result of above-mentioned back side alignment system 60, therefore; Substrate stage 2 is moved and detect alignment mark m1～m6, and can come substrate stage 2 is carried out drive controlling based on this testing result.By this, detect alignment mark m1～m6 at short notice and carry out the drive actions of substrate stage 2, therefore, production capacity is improved based on this testing result.
[the 2nd example]
Then, the 2nd example of the present invention is described.In this example, the formation of lamp optical system and projection optical system is different with the 1st example, and other formations are identical with the 1st example.Below, in this example, be that the center describes with difference with the 1st example.
Figure 13 is the figure that the integral body of the exposure device EX2 of this example of expression constitutes.
Exposure device EX2 comprises: the optical projection system PS2 of image projecting to the substrate P of the pattern of the illuminator IS2 that comes mask M is thrown light on exposing light beam EL, mask M that exposing light beam EL is thrown light on, keeping substrate P and movably substrate stage PST and whole action is controlled to exposure device EX2 control device 110.
Illuminator IS2 comprises: oval shape mirror 102, dichronic mirror 103, collimation lens 104, wavelength are selected light filter 105, dim light light filter 106, light collecting lens 107, optical fibers (light guide fiber) 108 and lamp optical system IL11～IL14.
The light beam that places the not shown light source of the 1st focal position of oval shape mirror 102 to penetrate for autogamy; By the reflectance coating of oval shape mirror 102, the reflectance coating of dichronic mirror 103 light of the wave band of the light that comprises g line (wavelength is 436nm), h line (wavelength is 405nm) and i line (wavelength is 365nm) is extracted out, this light beam is incident to collimation lens 104.The light source image is formed at the 2nd focal position of oval shape mirror 102.Divergent beams from the light source image of the 2nd focal position that is formed at oval shape mirror 102 become directional light by collimation lens 104, then select light filter 105 through wavelength, and this wavelength selects light filter 105 that the exposure band light beam of regulation is seen through.
The light beam of selecting light filter 105 through wavelength is followed by light collecting lens 107 the incident end of light harvesting 108a in the entrance port of optical fibers 108 through dim light light filter 106.Here; Optical fibers 108 for example is at random (random) with many singles harness and the optical fibers at random that constitutes in addition; This optical fibers 108 includes loophole 108a and four exits wound of bullet (below, be labeled as exit wound of bullet 108b, 108c, 108d and 108e).The light beam of entrance port that is incident to optical fibers 108 is cut apart and is penetrated by four exit wound of bullet 108b～108e after the internal communication of optical fibers 108.Be incident to four partial illumination optical system IL11～IL14 that partly mask M thrown light on through the light of cutting apart and penetrate.This lamp optical system IL11～IL14 for example is set to 1 row along the Y direction.The light of transmission illumination optical system IL11～IL14 roughly throws light on to mask M respectively equably.
Light from the field of illumination of mask M for example is incident to four projection optical system PL11～PL14.This projection optical system PL11～PL14 with the corresponding mode in the field of illumination of lamp optical system IL11～IL14, for example be set to along the Y direction 1 the row.Projection optical system PL11～PL14 images in the pattern image of mask M on the substrate P.In this example, use the enlarging projection optical system that the pattern on the mask M is imaged on the substrate P with increasing amplification to be used as projection optical system PL11～PL14.This projection optical system PL11～PL14 is formed at the reflected refraction projection optical system in the image field of substrate P with the interim image as the magnified image in the visual field.
Again, with above-mentioned example likewise, the exposure device EX2 of this example comprises: interferometer system 150 that the location information of substrate stage PST is measured or the back side alignment system 160 that comes the alignment mark to substrate P to detect from rear side.Again, with the 1st example likewise, above-mentioned exposure device EX2 comprises the surperficial alignment system (not shown) that comes the alignment mark to substrate P to detect from face side.The not shown surperficial alignment system or the formation of back side alignment system 160 are respectively and the surperficial alignment system 40 of for example the 1st example, the identical formation of formation of back side alignment system 60.
When using exposure device EX2 to come substrate P made public, the pattern image of mask M is projected to view field, substrate stage PST is come and gone on directions X move 1 time, come by this to be made public in half zone of substrate P.Therefore, substrate stage PST is come and gone on directions X move 2 times, come by this integral body of substrate P is made public.
When detecting,,, substrate stage PST being come and gone extraly move 1 time then in order to detect alignment mark if only use surperficial alignment system to detect to the alignment mark (not shown) that is formed at substrate P.With respect to this, in this example, use back side alignment system 160 to come the alignment mark of substrate P is detected, by this, the mobile omission of substrate stage PST is come and gone for 1 time.By this, production capacity is improved.
Technical scope of the present invention is not limited to above-mentioned example, in the scope that does not break away from aim of the present invention, can suitably add change.
For example, in above-mentioned example, be made as following formation, that is, with along substrate P+the X side end and-configuring area of the alignment mark m1～m6 on the both sides in opposite directions of X side end disposes back side alignment system 60 accordingly, but is not limited to this.For example, also can be made as following formation, promptly shown in figure 14, back side alignment system 60 is disposed at the corresponding part of configuring area with the alignment mark m1～m6 of the directions X central portion of substrate P.
Again, in above-mentioned example, be made as following formation, that is, m1～m6 is arranged at substrate P with alignment mark, with back side alignment system 60 this alignment mark m1～m6 is detected, but is not limited thereto.For example also can replace alignment mark m1～m6 and the limit part of substrate P is detected.
Again, in above-mentioned example, following example is illustrated, that is, detects alignment mark m1～m6 simultaneously with back side alignment system 60, come by this back side alignment system 60 is proofreaied and correct, but be not limited to this with surperficial alignment system 40.For example also can be made as following formation, that is, shown in Figure 15 A, back side alignment system 60 has the index projection with slit (slit) 67 between light source 61 and minute surface 63, be projected onto on the substrate stage 2 via the light of this index projection with slit 67.
When this situation, shown in Figure 15 B, control device 5 can make the index of 40 pairs of alignment system 60 projections from the back side of surperficial alignment system detect, and comes back side alignment system 60 is proofreaied and correct based on testing result.By this, can substrate P is carried place substrate maintaining part 16 before, back side alignment system 60 is proofreaied and correct, therefore, can further shorten the required time of registration process.
Again, when coming by back side alignment system 60 alignment mark m1～m6 detected, can index be projected to substrate P, and can therefore, can realize more high-precision test being that the alignment mark m1～m6 of benchmark detects with this index.Control device 5 also can make 40 pairs of These parameters of above-mentioned surperficial alignment system detect.Again, also can be with being arranged at surperficial alignment system 40 with slit 67 identical formations with the index projection.When this situation, substrate stage 2 is moved, on the Z direction with the focus of aligned pattern picture again.
Again, in above-mentioned example, be made as following formation, that is, when the baseline amount is measured, use infrared rays receiver 46, but be not limited thereto, for example also can be made as following formation, promptly shown in figure 16, use back side alignment system 60 to come the baseline amount is measured.In this constitutes; When the baseline amount is measured; So that the corresponding to mode of optical axis of mark Ma and microscope 60A～60F or microscope 60G～60L moves substrate stage 2, come the pattern image via mark Ma is detected with microscope 60A～60F, 60G～60L.The light that exposes to mark Ma can be the light of the light source that is arranged at back side alignment system 60, also can be similarly exposing light beam with above-mentioned example.When using exposing light beam, use microscope 60A～60F, the 60G～60L that also can detect to the wavelength region may of this exposing light beam.When this situation, substrate stage 2 is moved, on the Z direction with the focus of aligned pattern picture again.
Again; In above-mentioned example, following example is illustrated; That is, the testing result of control device 5 use back side alignment systems 60 comes substrate stage 2 is carried out drive controlling, but does not limit at this; For example, also can use above-mentioned testing result to come for example projection optical system PL1～PL7 is proofreaied and correct by control device 5.
Again, the configuration of the surveyed area of the surveyed area of surperficial alignment system 40 and back side alignment system 60 is not limited to the example shown in the above-mentioned example.For example, shown in (a)～Figure 17 of Figure 17 (e), can come suitably the surveyed area 400 of his-and-hers watches face system 40 to set according to the configuration of exposure area PA with the surveyed area 600 of back side alignment system 60.Again, need not always to make surveyed area 400 and surveyed area 600 to be consistent, for example, surveyed area each other also can stagger, or the quantity of surveyed area between the two also can be different.
Example when (a) of Figure 17 representes chamfering 6 times and carry out 6 scanning.Example when (b) of Figure 17 representes chamfering 8 times and carry out 4 scanning.Example when (c) of Figure 17 representes chamfering 12 times and carry out 6 scanning.Example when (d) of Figure 17 representes chamfering 18 times and carry out 6 scanning.Example when (e) of Figure 17 representes chamfering 15 times and carry out 9 scanning.When each situation,, represented surveyed area 400 and surveyed area 600, but for example surveyed area 400 also can overlap with surveyed area 600 in order to be easy to differentiate diagram with staggering.
Again; In above-mentioned example, enumerated following example and be illustrated, that is, and when his-and-hers watches face system 40 or back side alignment system 60 carry out timing; Control device 5 is proofreaied and correct the detected value of each alignment system; But be not limited thereto, for example, also can be in advance the actuator (actuator) of not shown position adjustment usefulness be installed on surperficial alignment system 40, back side alignment system 60; Control device 5 makes this actuator, comes the position of his-and-hers watches face system 40 and back side alignment system 60 to proofread and correct by this.
Moreover; Substrate P as above-mentioned example; Except can using the glass substrate that display device uses, also can use master (synthetic quartz, Silicon Wafer) of employed mask in ceramic wafer (ceramic wafer) or the exposure device of semiconductor crystal wafer (wafer), thin-film head (magnetic head) usefulness of semiconductor element manufacturing usefulness or main mask etc.
Moreover; As exposure device; Except the scanning exposure apparatus (scanning stepper (scanning stepper)) that can use step-scan (step and scan) mode; Also can use the projection aligner (stepper) that stepping repeats (step and repeat) mode; The scanning exposure apparatus of above-mentioned step-scan mode (scanning stepper) is that mask M and substrate P are synchronously moved, and comes substrate P is carried out scan exposure with the exposing light beam EL via the pattern of mask M, and the projection aligner of above-mentioned stepping repetitive mode (stepper) is to make under the static state of mask M and substrate P; Pattern to mask M makes public in the lump, and substrate P stepping is in regular turn moved.
Again, the present invention is also applicable to the exposure device of two (twin) flatbeds that possess a plurality of substrate stages that disclosed like No. 6341007 instructions of United States Patent (USP), No. 6208407 instructions of United States Patent (USP), No. 6262796 instructions of United States Patent (USP) etc.
Again, also applicable to disclose the exposure device that No. 1713113 instructions etc. disclosed like United States Patent (USP) No. 6897963 instructions, european patent application, this exposure device possesses: the substrate stage that is keeping substrate in the present invention; And measuring table, do not keep substrate and carrying the reference feature that is formed with reference mark and/or various photo switches, photo sensors.Also can adopt the exposure device that comprises a plurality of substrate stages and measuring table again.
Moreover; In above-mentioned example; On the substrate of light transmission, use the transmittance type mask of the light-shielding pattern be formed with regulation (or phase pattern, dim light pattern); But replace this mask; For example, of No. 6778257 instructions of United States Patent (USP), also can use the variable shaping mask (also being called electronics mask, active mask (active mask) or image generator (image generator)) that forms transmission pattern or reflection graphic patterns or luminous pattern based on the electronic bits of data of the pattern that should make public.Again, replace comprising the variable shaping mask of non-light emitting-type image display element, the pattern apparatus for converting that comprises the emissive type image display element also can be set.
The exposure device of above-mentioned example is with the mechanicalness precision that keeps regulation, electric precision, and the mode of optical precision, in addition assembly and getting of the various subsystems (sub system) that will comprise each cited in the claim of the application's case inscape.In order to ensure above-mentioned various precision; Front and back in this assembling; Various optical systems are carried out in order to realize the adjustment of optical precision various mechanical systems being carried out in order to realize the adjustment of mechanicalness precision various electrical systems being carried out in order to realize the adjustment of electric precision.
Various subsystem assemblings are comprised mechanicalness connection, the distribution connection of electric circuit and the pipe arrangement connection of pneumatic circuit etc. each other of various subsystems for the number of assembling steps of exposure device.Before above-mentioned various subsystem assemblings are the number of assembling steps of exposure device, there is each subsystem number of assembling steps separately certainly.After the number of assembling steps end of various subsystem assemblings, comprehensively adjust, thereby guarantee the various precision that exposure device is whole for exposure device.Moreover, be preferably in the dust free room that temperature and cleanliness factor etc. is managed and make exposure device.
Shown in figure 18, make the micro element (micro device) of semiconductor element etc. via following step: to the function of micro element, the step 201 that performance designs; Making is based on the step 202 of the mask (main mask) of this design procedure; Manufacturing is as the step 203 of the substrate of the base material of element; The processing substrate step 204 that comprises processing substrate (exposure-processed), according to above-mentioned example, this processing substrate (exposure-processed) comprises the pattern that uses mask and comes substrate is made public with exposing light beam, and the substrate (emulsion) through exposure is developed; Element number of assembling steps (processing technology (process) that comprises cutting (dicing) step, joint (bonding) step, encapsulation (package) step etc.) 205; And inspection step 206 etc.Moreover, in step 204, comprise:, come substrate is processed via this exposing patterns layer by emulsion being developed form and the pattern corresponding exposure patterned layer of mask (through the layer of the emulsion of developing).
Moreover the important document of above-mentioned example and variation can suitably make up.Again, the situation that also has the inscape of not using a part.As long as allow on the decree, then the whole open communique of being quoted in above-mentioned example and the variation relevant with exposure device etc. and the announcement of United States Patent (USP) are quoted a part of making this paper content again.
[component symbol explanation]
EX, EX2: exposure device
M: mask
P: substrate
1: the mask platform
2, PST: substrate stage
5,110: control device
40: surperficial alignment system
43: reference feature
46: infrared rays receiver
60,160: back side alignment system
67: slit is used in the index projection
Claims (26)
1. an exposure device is the exposure device that substrate is made public, and it is characterized in that it comprises:
Platform has to carry and is equipped with carrying of aforesaid substrate and puts portion and move;
Test section is arranged at above-mentioned platform, and the regional part of the regulation that is positioned at the portion of putting this year of carrying the aforesaid substrate that places the portion of putting in above-mentioned year is detected; And
Control part comes above-mentioned platform is carried out drive controlling based on the testing result of above-mentioned test section.
2. exposure device according to claim 1 is characterized in that wherein
Above-mentioned test section is put portion's side from above-mentioned year of aforesaid substrate aforesaid substrate is detected.
3. exposure device according to claim 1 and 2 is characterized in that wherein
The afore mentioned rules zone comprises a plurality of surveyed areas,
The portion of putting was set at rectangle in above-mentioned year,
At least a portion of above-mentioned a plurality of surveyed areas comprises the one side in the both sides in opposite directions of the portion of putting in above-mentioned year.
4. exposure device according to claim 3 is characterized in that wherein
At least a portion of above-mentioned a plurality of surveyed areas is set between the above-mentioned both sides in opposite directions.
5. according to the described exposure device of arbitrary claim in the claim 1 to 4, it is characterized in that it comprises
The 2nd test section, the 2nd test section are arranged at the position different with above-mentioned platform, and place the aforesaid substrate of the portion of putting in above-mentioned year to detect to carrying,
Above-mentioned control part comes above-mentioned platform is carried out drive controlling based on the testing result of above-mentioned test section and the testing result of above-mentioned the 2nd test section.
6. exposure device according to claim 5 is characterized in that it also comprises
Correction portion, this correction portion comes above-mentioned test section is proofreaied and correct based on the testing result of above-mentioned the 2nd test section,
Above-mentioned the 2nd test section detects the part that is positioned at the afore mentioned rules zone at least of carrying the aforesaid substrate that places the portion of putting in above-mentioned year.
7. according to the described exposure device of arbitrary claim in the claim 1 to 6, it is characterized in that it also comprises:
Illumination part, rayed to above-mentioned regulation is regional;
Optical detection part is arranged at the position different with above-mentioned platform, and the light that exposes to the afore mentioned rules zone is detected; And
The 2nd correction portion comes above-mentioned test section is proofreaied and correct according to the testing result of above-mentioned optical detection part.
8. according to the described exposure device of arbitrary claim in the claim 5 to 7, it is characterized in that it also comprises
Projection optical system, this projection optical system are projected to pattern image and carry the aforesaid substrate that places the portion of putting in above-mentioned year,
Above-mentioned the 2nd test section is disposed at assigned position with respect to above-mentioned projection optical system.
9. exposure device according to claim 8 is characterized in that it comprises
The 3rd test section, the 3rd test section is arranged at above-mentioned platform, and comprises reference feature, is that benchmark comes the above-mentioned pattern image of above-mentioned projection optical system institute projection is detected with above-mentioned reference feature,
Above-mentioned control part comes above-mentioned platform is carried out drive controlling based on each testing result of above-mentioned test section, above-mentioned the 2nd test section and above-mentioned the 3rd test section.
10. exposure device according to claim 9 is characterized in that it also comprises
The 3rd correction portion, the 3rd correction portion comes above-mentioned the 2nd test section is proofreaied and correct based on the testing result of above-mentioned the 3rd test section.
11. the described exposure device of arbitrary claim in 10 is characterized in that wherein according to Claim 8
Above-mentioned test section detects above-mentioned pattern image.
12. the described exposure device of arbitrary claim in 11 is characterized in that it also comprises according to Claim 8
The 4th correction portion, the 4th correction portion comes above-mentioned projection optical system is proofreaied and correct based on the testing result of above-mentioned test section.
13. exposure device according to claim 12 is characterized in that wherein
Above-mentioned pattern image is a magnified image.
14. an exposure method is the exposure method that substrate is made public, and it is characterized in that it comprises:
Carry and put step, aforesaid substrate is carried the portion of putting of carrying that places platform;
Detect step, use the test section that is arranged at above-mentioned platform, the regional part of the regulation that is positioned at the portion of putting in above-mentioned year in the aforesaid substrate is detected; And
The drive controlling step comes above-mentioned platform is carried out drive controlling based on the testing result of above-mentioned test section.
15. exposure method according to claim 14 is characterized in that wherein
Above-mentioned detection step comprises that above-mentioned year from aforesaid substrate put portion's side aforesaid substrate is detected.
16., it is characterized in that wherein according to claim 14 or 15 described exposure methods
The afore mentioned rules zone comprises a plurality of surveyed areas,
The portion of putting formed rectangle in above-mentioned year,
At least a portion of above-mentioned a plurality of surveyed areas comprises the one side in the both sides in opposite directions of the portion of putting in above-mentioned year.
17., it is characterized in that wherein according to the described exposure method of arbitrary claim in the claim 14 to 16
Above-mentioned actuation step comprises simultaneously carries out computing based on the testing result in the above-mentioned detection step, and one side makes above-mentioned platform move to the exposure starting position.
18., it is characterized in that it also comprises according to the described exposure method of arbitrary claim in the claim 14 to 17
The 2nd detects step, and the 2nd detects step uses the 2nd test section that is arranged at the position different with above-mentioned platform, come to place the aforesaid substrate of the portion of putting in above-mentioned year to detect to carrying,
Above-mentioned drive controlling step comes above-mentioned platform is carried out drive controlling based on the testing result that the testing result in the above-mentioned detection step and the above-mentioned the 2nd detects in the step.
19. exposure method according to claim 18 is characterized in that it also comprises
Aligning step, this aligning step constitutes above-mentioned test section based on the testing result in above-mentioned the 2nd detection step,
The above-mentioned the 2nd detects step detects the part that is positioned at the afore mentioned rules zone at least of carrying the aforesaid substrate that places the portion of putting in above-mentioned year.
20., it is characterized in that it also comprises according to the described exposure method of arbitrary claim in the claim 14 to 19:
The rayed step, rayed to above-mentioned regulation is regional;
Light detects step, uses the optical detection part that is arranged at the position different with above-mentioned platform, comes the light that exposes to the afore mentioned rules zone is detected; And
The 2nd aligning step detects the testing result of step and comes above-mentioned test section is proofreaied and correct according to above-mentioned light.
21., it is characterized in that it also comprises according to the described exposure method of arbitrary claim in the claim 18 to 20:
Pattern image is projected to carry places the projection optical system of putting the aforesaid substrate of portion in above-mentioned year, above-mentioned the 2nd test section is disposed at respect to above-mentioned projection optical system under the state of assigned position, carry out the above-mentioned the 2nd and detect step.
22. exposure method according to claim 21 is characterized in that it also comprises:
Projection step uses above-mentioned projection optical system that above-mentioned pattern image is projected to aforesaid substrate; And
The 3rd detects step, and be arranged at above-mentioned platform, and comprise reference feature, be that benchmark comes the above-mentioned pattern image of above-mentioned projection step institute projection is detected with above-mentioned reference feature,
Above-mentioned drive controlling step comes above-mentioned platform is carried out drive controlling based on each testing result that above-mentioned detection step, the above-mentioned the 2nd detects in step and above-mentioned the 3rd detection step.
23. exposure method according to claim 22 is characterized in that it also comprises
The 3rd aligning step, the 3rd aligning step constitutes above-mentioned the 2nd test section based on the testing result in above-mentioned the 3rd detection step.
24., it is characterized in that it also comprises according to claim 22 or 23 described exposure methods:
The 4th detects step, uses above-mentioned test section to come above-mentioned pattern image is detected; And
The 4th aligning step comes above-mentioned projection optical system is proofreaied and correct according to the testing result in above-mentioned the 4th detection step.
25., it is characterized in that wherein according to the described exposure method of arbitrary claim in the claim 21 to 24
Above-mentioned pattern image is a magnified image.
26. a manufacturing method is characterized in that it comprises following step:
Use like the described exposure device of arbitrary claim in the claim 1 to 13, the aforesaid substrate that is coated with emulsion made public, with pattern transfer to this substrate;
The above-mentioned emulsion of having made public is developed, form and above-mentioned pattern corresponding exposure patterned layer; And
Come aforesaid substrate is processed via above-mentioned exposing patterns layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-195686 | 2009-08-26 | ||
| JP2009195686 | 2009-08-26 | ||
| PCT/JP2010/064405 WO2011024866A1 (en) | 2009-08-26 | 2010-08-25 | Exposure apparatus, exposure method, and device manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102472987A true CN102472987A (en) | 2012-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010800340183A Pending CN102472987A (en) | 2009-08-26 | 2010-08-25 | Exposure apparatus, exposure method, and device manufacturing method |
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| Country | Link |
|---|---|
| JP (1) | JP5692076B2 (en) |
| KR (3) | KR101769091B1 (en) |
| CN (1) | CN102472987A (en) |
| TW (1) | TW201118509A (en) |
| WO (1) | WO2011024866A1 (en) |
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| TWI584081B (en) * | 2014-10-29 | 2017-05-21 | Adjustment device for adjusting device and adjustment method thereof | |
| CN107251674A (en) * | 2015-02-26 | 2017-10-13 | 富士机械制造株式会社 | Component supplying apparatus and fitting machine |
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| KR101961605B1 (en) * | 2011-12-20 | 2019-03-22 | 가부시키가이샤 니콘 | Substrate processing device, device manufacturing system and device manufacturing method |
| US10585360B2 (en) * | 2017-08-25 | 2020-03-10 | Applied Materials, Inc. | Exposure system alignment and calibration method |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20170096216A (en) | 2017-08-23 |
| TW201118509A (en) | 2011-06-01 |
| KR101925114B1 (en) | 2018-12-05 |
| JP5692076B2 (en) | 2015-04-01 |
| KR101769091B1 (en) | 2017-08-30 |
| WO2011024866A1 (en) | 2011-03-03 |
| KR102047505B1 (en) | 2019-12-02 |
| KR20120047849A (en) | 2012-05-14 |
| KR20180129989A (en) | 2018-12-05 |
| JPWO2011024866A1 (en) | 2013-01-31 |
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