CN1459671A - Exposure method, exposure apparatus and element mfg. method - Google Patents

Exposure method, exposure apparatus and element mfg. method Download PDF

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Publication number
CN1459671A
CN1459671A CN03136730A CN03136730A CN1459671A CN 1459671 A CN1459671 A CN 1459671A CN 03136730 A CN03136730 A CN 03136730A CN 03136730 A CN03136730 A CN 03136730A CN 1459671 A CN1459671 A CN 1459671A
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China
Prior art keywords
exposure
substrate
levelling
mask
pattern
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CN03136730A
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Chinese (zh)
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CN100524024C (en
Inventor
奈良圭
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Nikon Corp
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Nikon Corp
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Priority claimed from JP2002148309A external-priority patent/JP4172204B2/en
Priority claimed from JP2002148301A external-priority patent/JP4168665B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment

Abstract

An exposing method, exposing device and manufacturing method for devices that can keep precision with a decreased processing time and can improve throughput are provided. The exposing device is provided with alignment systems, laser interferometers and a control device. The alignment systems detect a plurality of alignment marks arranged on a sensitization substrate. There are at least 3 alignment systems juxtaposed in a non-scanning direction that is axis direction. The laser interferometers is juxtaposed in axis direction and can detect the position of the sensitization substrate in axis direction. The alignment systems align the sensitization substrate with respect to the mask. The control device switches the laser interferometer according to the position of the sensitization substrate and chooses one of the laser interferometers corresponding to the pattern region that to be exposed on the sensitization substrate, and then the alignment systems align the substrate according to the detecting position of the laser interferometer.

Description

Exposure method, exposure device and manufacturing method
Technical field
The present invention is about a kind of exposure method, exposure device and manufacturing method, one side with mask and substrate do with the moved further one side with the pattern exposure of mask on substrate.
Background technology
Liquid crystal display cells and semiconductor element be by will be in the pattern transfer that forms on the mask on sensitive substrate, promptly so-called photolithographic gimmick and manufactured.Employed exposure device in this photoetching process engineering, have the mounting sensitive substrate and make the mask objective table that figuratum mask work 2 dimensions of 2 dimensions mobile substrate objective table, mounting move, pattern mobile one by one mask objective table of one side and the substrate objective table that forms on the mask simultaneously is needed on the sensitive substrate by projection optical system.As exposure device, mainly containing pattern with mask all is needed on dispensable mould exposure device on the sensitive substrate and one side simultaneously mask objective table and substrate objective table synchronous scanning one side is needed on 2 kinds of scanning exposure apparatus on the sensitive substrate continuously with the pattern of mask.Wherein when making liquid crystal display cells, because the requirement of the maximization of viewing area, scanning exposure apparatus is mainly used.
Scanning exposure apparatus a plurality of projection optical systems of configuration are arranged so that in abutting connection with view field carry out the quantitative displacement of institute on the direction of scanning and make in abutting connection with each end (junction surface) of view field with the direction of direction of scanning orthogonal on repeat the scanning exposure apparatus of promptly so-called poly-lens mode (poly-lens scanning exposure apparatus).The scanning exposure apparatus of poly-lens mode can simultaneously be kept good imaging characteristic one side and not make the device maximization and obtain big exposure area (pattern forms the zone).Be positioned at the visual field diaphragm of each projection optical system of this scanning exposure apparatus, can be for example trapezoidally, the wide total in the aperture of the visual field diaphragm of direction of scanning is set to equal usually.Therefore, the junction surface of the projection optical system of adjacency is repeated exposure, so this scanning exposure apparatus has the optical aberration of the projection optical system of making and the advantage of exposure illumination smooth change.
Shown in Figure 21 is an example of original poly-lens scanning exposure apparatus.
As shown in figure 21, the lamp optical system IL that throws light on by exposure light EL of the exposure device EXJ mask M that possesses the mask objective table MST that supports mask M, the substrate objective table PST that supports sensitive substrate are arranged, mask objective table MST is supported, will be by exposure light EL illumination mask M pattern as a plurality of projection optical system PLas～PLg of projection on the sensitive substrate P that substrate objective table PST is supported.Projection exposure system therefor PLa, PLc, PLd, PLg and projection optical system PLb, PLd, PLf become the staggered arrangement of 2 row, the projection optical system of the adjacency among projection optical system PLa～PLg each other (for example projection optical system PLa and PLb, PLb and PLc) on X-direction by the quantitative shift configuration of institute.And repeat on sensitive substrate P at the junction surface in corresponding with projection optical system PLa～PLg respectively trapezoidal projection zone.
Above mask objective table MST, be provided with levelling optical system 500A, the 500B of the levelling (alignMent) of carrying out mask M and sensitive substrate P.Levelling optical system 500A, 500B can move in Y direction by not illustrated driving mechanism, enter between lamp optical system IL and the mask M when levelling is handled, and keep out of the way from the field of illumination again when scan exposure simultaneously.Levelling optical system 500A, 500B detect the mask levelling sign that is formed at mask M, and the substrate levelling sign that will be formed at sensitive substrate P simultaneously detects by projection optical system PLa and PLg.In addition, on substrate objective table PST-end of X side is provided with the moving lens 502a that extends in Y direction, end in-Y side is provided with the moving lens 502b that extends in X-direction, with these moving lens 502a, the 502b position of subtend respectively, be respectively equipped with by to moving lens 502a, 502b irradiating laser, can detect laser interferometer 501a, 501b in the position of the X-direction of substrate objective table PST and Y direction.
Figure 22～Figure 24 is used to illustrate the levelling handling procedure of use exposure device EXJ and the diagram of exposure treating programme.Here be to describe about the occasion that on sensitive substrate P, forms 4 elements (pattern forms the zone) PA1～PA4.
As shown in figure 22, on forming each 4 jiaos of regional PA1～PA4, the pattern on the sensitive substrate P is formed with the levelling sign.
Exposure device EXJ at first shown in Figure 22 (a), with Fig. 1 case on the sensitive substrate P form regional PA1-2 substrates levelling signs M1, M2 of X side, detect by projection optical system PLa and PLg by levelling optical system 500A, 500B.Levelling optical system 500A, 500B also detect and the substrate levelling sign corresponding mask levelling sign of M1, M2 (not illustrating among Figure 22) simultaneously.Then as Figure 22 (b) shown in, sensitive substrate P by substrate objective table PST in-X side shifting, levelling optical system 500A, 500B with pattern form regional PA1+2 substrates levelling signs M3, M4 of X side are by projection optical system PLa and PLg detection.At this moment, mask M also moves by mask substrate MST, and substrate levelling sign M3, M4 pairing mask levelling sign and substrate levelling sign M3, the M4 of sensitive substrate P are detected together.Then as Figure 22 (c) shown in, in-X side shifting, the 2nd pattern that levelling optical system 500A, 500B detect sensitive substrate P forms substrate levelling sign M1, the M2 of regional PA2 and corresponding therewith mask levelling indicates by substrate objective table PST for sensitive substrate P.Then as Figure 22 (d) shown in, sensitive substrate P is in-X side shifting, and levelling optical system 500A, 500B check pattern form substrate levelling sign M3, the M4 of regional PA2 and corresponding therewith mask levelling indicates.
Then as Figure 23 (a) shown in, sensitive substrate P advances mobile in-Y side step by substrate objective table PST, and levelling optical system 500A, 500B detect that the 3rd pattern forms substrate levelling sign M3, the M4 of regional PA3 and corresponding therewith mask levelling indicates.Then as Figure 23 (b) shown in, sensitive substrate P is in+X side shifting, and levelling optical system 500A, 500B detect substrate levelling sign M1, the M2 that form regional PA3 and corresponding therewith mask levelling indicates.Then as Figure 23 (c) shown in, sensitive substrate P is in+X side shifting, levelling optical system 500A, 500B detect the 4th pattern form substrate levelling sign M3, the M4 of regional PA4 and therewith the mask of correspondence align and indicate.Then as Figure 23 (d) shown in, sensitive substrate P is in+X side shifting, and levelling optical system 500A, 500B check pattern form substrate levelling sign M1, the M2 of regional PA4 and corresponding therewith mask levelling indicates.
As mentioned above, the stepping that one side is carried out mask M and sensitive substrate P is moved, and one side detects each pattern by 2 levelling optical system 500A, 500B and forms the positional information of each substrate levelling sign M1～M4 of regional PA1～PA4 and the positional information of mask levelling sign.Exposure device EXJ is based on the testing result of levelling optical system 500A, 500B then, ask each pattern to form the mask M in zone and the site error of sensitive substrate P and displacement, rotation, calibration (scaling) iseikonia characteristic, calculate modified value from the control information of trying to achieve, and carry out exposure-processed based on this modified value.When carrying out exposure-processed, at first shown in Figure 24 (a), the exposure-processed that the pattern of aligning processing is at last formed regional PA4 is carried out.Promptly, the mask objective table MST (not illustrating among Figure 24) that one side will be supported the substrate objective table PST of sensitive substrate P and support mask M makes same moved further at-directions X, one side carries out the pattern of sensitive substrate P is formed the exposure-processed of regional PA4 by utilizing exposure optical illumination mask M.After the exposure-processed that pattern is formed regional PA4 finishes, shown in Figure 24 (b),, set the position of mask M and sensitive substrate P in order to carry out pattern is formed the scan exposure processing of regional PA3.That is, sensitive substrate P moves at-directions X, and mask M (not illustrating among Figure 24) carries out big moving for returning initial position at+directions X simultaneously.Then, carry out pattern is formed the scan exposure processing of regional PA3.After the scan exposure processing that pattern is formed regional PA3 finishes, shown in Figure 24 (c),, set the position of mask M and sensitive substrate P in order to carry out pattern is formed the scan exposure processing of regional PA1.That is, sensitive substrate P also moves in+Y direction when+directions X carries out big moving by substrate objective table PST, and mask M returns initial position to carry out big moving in+X side.Then, carry out pattern is formed the scan exposure processing of regional PA1.After the exposure-processed that pattern is formed regional PA1 finishes, shown in Figure 24 (d),, set the position of mask M and sensitive substrate P in order to carry out pattern is formed the scan exposure processing of regional PA2.That is, sensitive substrate P moves at-directions X, and mask M carries out big moving in order to return initial position at+directions X simultaneously.Then, carry out pattern is formed the scan exposure processing of regional PA2.So promptly finish the exposure-processed that each pattern is formed regional PA1～PA4 respectively.
And the exposure device EXJ one side position one side that detects sensitive substrate P by laser interferometer 501a, 501b detects successively by levelling optical system 500A, 500B and is located at each levelling sign M1～M4 of four jiaos that pattern forms regional PA1～PA4.Specifically, exposure device EXJ is disposed at institute's allocation with substrate objective table PST, and with Fig. 1 case on the sensitive substrate form regional PA1-2 substrates levelling sign M1, M2 of X side and corresponding therewith not illustrated mask levelling sign, detect by projection optical system PLa and PLg by levelling optical system 500A, 500B.Then, exposure device EXJ moving substrate objective table PST, and by levelling optical system 500A, 500B with pattern form regional PA1+2 substrates levelling signs M4, M3 of X side detect by projection optical system PLa and PLg.In carrying out Mark Detection, laser interferometer detects the position of substrate objective table PST (sensitive substrate P).After detection Fig. 1 case forms levelling sign M1～M4 of regional PA1, exposure device EXJ and Fig. 1 case form the detection of levelling sign M1～M4 of regional PA1 and move same, moving substrate objective table PST, detect the 2nd pattern by levelling optical system 500A, 500B and form substrate levelling sign M1, the M2 of regional PA2 and corresponding therewith mask levelling sign, then detect substrate levelling sign M3, M4.This moment, laser interferometer also detected the position of sensitive substrate P.Below, exposure device EXJ similarly detects substrate levelling sign M1～M4 that the 3rd, the 4th pattern forms regional PA3, PA4 successively.
As mentioned above, exposure device EXJ one side is carried out the stepping of mask M and sensitive substrate P repeatedly and is moved, and one side detects the position of sensitive substrate P and mask M by laser interferometer and detects each levelling sign M1～M4 that each pattern forms regional PA1～PA4.Then, exposure device EXJ is based on the testing result of levelling optical system 500A, 500B, ask each pattern to form the mask M in zone and the site error of sensitive substrate P and displacement, rotation, calibration iseikonia characteristic, calculate modified value from this control information of trying to achieve, and carry out exposure-processed based on this modified value.When carrying out exposure-processed, the exposure-processed that the pattern of aligning processing is at last formed regional PA4 is carried out.That is, one side will be supported the substrate objective table PST of sensitive substrate P and support the mask objective table MST of mask M to make same moved further in X-direction that one side carries out the pattern of sensitive substrate P is formed the exposure-processed of regional PA4 by utilizing exposure optical illumination mask M.
But above-mentioned original exposure device and exposure method can produce above-described problem.
Above-mentioned original method forms zone (element) PA1～PA4 for 4 patterns of exposure-processed, needs one side that mask M and sensitive substrate P are done with moved further and simultaneously carries out the action of 8 levelling Mark Detection, and it is long that required time is handled in levelling.Obtain the more element of making since 1 sensitive substrate P, the levelling processing time becomes longer.When the levelling processing time was elongated, the productivity of exposure device integral body was just low.
On the other hand, in order to shorten the levelling processing time, considered to reduce the quantity of the levelling sign of detection, considered also that the number that forms the levelling sign that detects in the zone by 1 pattern be reduced to 2 from above-mentioned 4 aligned processing, but behind the number that reduces the levelling sign that detects, calibration, rotation or quadrature degree iseikonia characteristic are can not precision detected well, can cause the low of levelling precision.The levelling precision is in case low, and the pattern precision of the element of manufacturing is just low.
And, simultaneously detect sensitive substrate P by laser interferometer (position that pattern forms regional PA1～PA4) is simultaneously detected with after each pattern forms the corresponding levelling sign M1～M4 of regional PA1～PA4, again each pattern is formed the formation that regional PA1～PA4 carries out exposure-processed for a kind of.When sensitive substrate P is maximized, in order to carry out forming the position probing of regional PA1～PA4, be necessary to follow the maximization of sensitive substrate P and moving lens is also maximized, be i.e. growing up by each pattern of laser interferometer.But make growing up of moving lens can produce problem on the machining precisioies such as reflecting surface deflection of moving lens.Also have and considered to make short moving lens and each pattern to form the corresponding a plurality of settings in zone, simultaneously corresponding these moving lens are provided with a plurality of laser interferometer, one side is replaced the laser interferometer of the position probing that is used for sensitive substrate P (pattern forms the zone) in these a plurality of laser interferometer and is simultaneously carried out position probing, but take place sometimes to replace error, can not carry out the good position probing of precision.
Summary of the invention
The purpose of this invention is to provide and a kind ofly form in light of this situation, one side is kept precision and is simultaneously shortened the levelling processing time, and exposure method, exposure device and manufacturing method that productivity is improved.
In order to solve above-mentioned problem, the present invention adopts following formation.
Exposure method of the present invention be a kind of one side with mask and substrate on the 1st direction with the exposure method of moved further one side to the pattern of base plate exposure mask, it is characterized in that: respectively be located at a plurality of levelling sign subtends on the substrate, simultaneously on the 2nd direction of intersecting with the 1st direction, have at least 3 side by side a plurality of levelling system of configuration detect a plurality of levelling signs, and make mask and substrate position identical based on this testing result.
In addition, exposure device of the present invention be a kind of one side with mask and substrate on the 1st direction with the exposure device of moved further one side to the pattern of base plate exposure mask, have respectively a plurality of levelling system that detects the levelling sign of being located at a plurality of positions on the substrate, it is characterized in that: the levelling system disposes 3 at least side by side in the 2nd direction of intersecting with the 1st direction.
As utilize the present invention, in the direction of scanning to mask and substrate is that the non-direction of scanning that the 1st direction is intersected is on the 2nd direction, at least side by side dispose 3 levelling systems, thus need not to reduce the number of the levelling sign that should detect, just can with compared the detection action frequency that reduces the levelling sign originally.Therefore can simultaneously keep the levelling precision and simultaneously shorten the levelling processing time.
The feature of manufacturing method of the present invention is: comprise the exposure method that uses above-mentioned explanation or the exposure device of above-mentioned explanation, with the element pattern that is depicted in mask be exposed to the engineering of substrate, with the engineering of this exposure base video picture.
As utilize the present invention, and by align processing with high precision after, carry out exposure-processed again, can improve the element pattern precision of manufacturing.In addition, levelling is shortened in the processing time, so the productivity can improve element and make the time.
Exposure method of the present invention is a kind of mask and substrate to be done same moved further in the 1st direction, exposure method to the pattern of base plate exposure mask, it is characterized in that: the subregion that substrate is divided into a plurality of exposure areas, on each subregion of a plurality of exposure areas, make after mask and substrate position coincide, the pattern of mask is exposed on substrate.
As utilize the present invention, for a kind of exposure area that will expose on substrate (pattern forms the zone) is divided into a plurality of subregions, and in the per minute district, align (make position coincide) successively and handle and the formation of exposure-processed, so even substrate maximizes, also substrate can be divided into a plurality of subregions and handle respectively, can on each of each subregion, carry out precision and align well and handle and exposure-processed.And, a plurality of position detecting devices can not be switched in position probing action to the above-mentioned processing of each subregion (levelling is handled and exposure-processed), can carry out by 1 position detecting device, thus in to the processing of 1 subregion (levelling is handled and exposure-processed) switching error of generation device not.
Exposure device of the present invention be a kind of with mask and substrate in the same moved further of the 1st direction, exposure device to the pattern of base plate exposure mask, it is characterized in that: be included in configuration side by side on the 1st direction, can detect a plurality of position detecting devices of the position on the 2nd direction of intersecting with the 1st direction of substrate, levelling portion to mask levelling substrate, position according to substrate, a plurality of position detecting devices are switched in control, corresponding simultaneously exposure area at base plate exposure, select 1 in a plurality of position detecting devices, align the control device of exposure based on the detection position of this position detecting device by levelling portion.
As utilize the present invention, is a plurality of configurations arranged side by side on the 1st direction with position detecting device in the direction of scanning, and according to a plurality of position detecting devices of the position switching control of substrate, so even moving lens is short, used position detecting device in also can detecting by the position switching position according to substrate carries out position probing in each of a plurality of exposure areas.During then by the 1st exposure area in a plurality of exposure areas of exposure, aligning processing based on the testing result of the 1st position detecting device by levelling portion exposes afterwards, and when exposure the 2nd exposure area, align by levelling portion based on the testing result of the 2nd position detecting device and to handle the back and expose, can to the processing of 1 exposure area (pattern forms the zone) time, not carry out the change action of a plurality of position detecting devices, get final product position probing by 1 position detecting device, so can not contain the switching error of position detecting device about each exposure area, precision is carried out position probing and exposure-processed well.
The feature of manufacturing method of the present invention is: comprise the exposure method that uses above-mentioned explanation or the exposure device of above-mentioned explanation, with the element pattern that is depicted in mask be exposed to the engineering of substrate, with the engineering of this exposure base video picture.
As utilize the present invention, can carry out high-precision levelling processing and exposure-processed at each subregion of a plurality of exposure areas, so can improve the element pattern precision of manufacturing.
Description of drawings
Fig. 1 is the brief strabismus map of an embodiment of expression exposure device of the present invention.
Fig. 2 is the summary pie graph of Fig. 1.
Figure 3 shows that light filter.
Fig. 4 is the brief strabismus map that expression possesses the levelling unit of levelling system.
Fig. 5 is the diagram that is used to illustrate levelling system and AF detection system.
Fig. 6 is the summary pie graph of levelling system.
Fig. 7 is the summary pie graph of AF detection system.
Fig. 8 is the diagram that is used to illustrate baseline (base line) measuring program.
Fig. 9 is the diagram that is used to illustrate exposure method of the present invention.
Figure 10 is the diagram that is used to illustrate exposure method of the present invention.
Figure 11 is the diagram that is used to illustrate exposure method of the present invention.
Figure 12 is the diagram that is used to illustrate exposure method of the present invention.
Figure 13 is the diagram that is used to illustrate exposure method of the present invention.
Figure 14 is the diagram that is used to illustrate exposure method of the present invention.
Figure 15 is the diagram that is used to illustrate exposure method of the present invention.
Figure 16 is the process flow diagram that is used to illustrate exposure method of the present invention.
Figure 17 is the process flow diagram that is used to illustrate exposure method of the present invention.
Figure 18 shows that the configuration example of levelling system.
Figure 19 shows that other embodiment of exposure method of the present invention.
Figure 20 is the process flow diagram of an example of the manufacturing engineering of expression semiconductor element.
Figure 21 is the oblique view of the original exposure device of expression.
Figure 22 be used to illustrate original exposure method figure not.
Figure 23 is the diagram that is used to illustrate original exposure method.
Figure 24 is the diagram that is used to illustrate original exposure method.
32a, 32b: moving lens (position detecting device); 34a, 34b: moving lens (position detecting device); 60 (60a～60g): substrate-side AF detection system; 70 (70a～70d): mask side AF detection system; AL (AL1～AL6): levelling (alignMent) system; BR1～BR3: subregion CONT: control device; EX: exposure device; M: mask; M1～M6: levelling sign; MST: mask objective table; MX1, MX2: laser interferometer (position detecting device); P: sensitive substrate (substrate); PA1～PA9: pattern forms zone (exposure area); PL (PLa～PLg): projection optical system; PST: substrate objective table; PX1, PX2: laser interferometer (position detecting device); PY1～PY3: laser interferometer (position detecting device).
Embodiment
Below about exposure device of the present invention, describe with reference to Fig. 1～Fig. 7.
Fig. 1 is the brief strabismus map of an embodiment of expression exposure device of the present invention, and Fig. 2 is the summary pie graph.
In Fig. 1 and Fig. 2, the lamp optical system IL of the mask M that exposure device EX possesses the mask objective table MST that support to form figuratum mask M, the substrate objective table PST that supports sensitive substrate P are arranged, supported by mask objective table MST by exposure light EL illumination, will be by exposure light EL illumination mask M pattern as the projection optical system PL of projection on the sensitive substrate P that substrate objective table PST is supported, detect the AL of levelling system that is located at the levelling sign on the sensitive substrate P.Possessing has detection to support a plurality of laser interferometer (position detecting device) MX1 of the mask objective table MST of mask M in the position of X-direction, MX2, detection mask objective table MST support a plurality of laser interferometer (position detecting device) PX1 of the substrate objective table PST of sensitive substrate P in the position of X-direction in laser interferometer (position detecting device) MY1, the detection of the position of Y direction, PX2, detection substrate objective table PST are at a plurality of laser interferometer (position detecting device) PY1 of the position of Y direction, PY2, PY3.By the mask M of mask objective table MST support with by the sensitive substrate P of substrate objective table PST support, by the position relation configuration of projection optical system PL with conjugation.Lamp optical system IL has a plurality of, and present embodiment is 7 illuminator module IMs (IMa～IMg).Projection optical system PL also has correspondingly with the number of illuminator module IM in addition, and present embodiment is 7 projection optical system PLa～PLg.Each projection optical system PLa～PLg and the corresponding configuration of each illuminator module IM a～IMg.Sensitive substrate P goes up coating emulsion (photoresist) at glass plate (glass substrate).
The exposure device EX of relevant present embodiment, be one simultaneously to carry out the scanning exposure apparatus of scan exposure with moved further mask M and sensitive substrate P in the face of exposure light EL, in the following description, optical axis direction with projection optical system PL is a Z-direction, with the vertical direction of Z-direction is that the synchronous moving direction of mask M and sensitive substrate P is X-direction (the 1st direction, the direction of scanning), orthogonal direction with Z-direction and X-direction (direction of scanning) is Y direction (the 2nd direction, non-direction of scanning).In addition, with around the X-axis, around the Y-axis, the axial all directions of Z are θ directions X, θ Y direction, θ Z direction.
As shown in Figure 2, lamp optical system IL possesses the light source 1 that formations such as extra-high-pressure mercury vapour lamp are arranged, to carry out the oval shape mirror 1a of light harvesting from the light beam that light source 1 penetrates, will be by the beam reflection of exposure necessary wavelength among the light beam of this oval shape mirror 1a light harvesting, and the dichronic mirror 2 that sees through of the light beam that makes other wavelength, by among dichronic mirror 2 beam reflected, only make the required wavelength of exposure (be generally g again, h, at least 1 wave band in the I line) wavelength that passes through is selected light filter 3, to select the light beam of light filter 3 to branch into many from wavelength, present embodiment is 7, by catoptron 5 by the light guide 4 of each illuminator module IM a～IMg of incident.
The illuminator module IM is provided with a plurality of, be provided with IMa～IMg7 in the present embodiment (but in Fig. 2, for convenience only to corresponding being indicated of illuminator module IM g), each lamp optical system IMa～IMg keeps certain arranged spaced in X-direction and Y direction.Then, from the exposure light EL of each ejaculation of these a plurality of illuminator module IM a～IMg, the different districts territory on the mask M that throws light on respectively (field of illumination of lamp optical system).
Each illuminator module IM a～IMg possesses illumination shutter 6, relay lens 7, the fly's-eye lens 8 as optical integrator, condenser 9 is arranged.Illumination shutter 6 is in the light path downstream of light guide 4, to light path configuration free to advance or retreat.When covering light path, illumination shutter 6 will when the liberation light path, remove shading from the light beam shading of this light path to light beam.The mobile shutter drive division 6a of light path advance and retreat that illumination shutter 6 continues and makes 6 pairs of light beams of this illumination shutter.Shutter drive division 6a is by control device CONT Be Controlled.
In addition, on each illuminator module IM a～IMg, be provided with light quantity adjusting mechanism 10.This light quantity adjusting mechanism 10 is exposures of adjusting each light path by the illumination of every light path being set light beam, possesses half-mirror is arranged (half-Mirror) 11, detecting device (detector) 12, light filter 13, light filter drive division 14.Half-mirror 11 is disposed in the light path between light filter 13 and the relay lens 7, will be through a part of incident detecting device 12 of the light beam of light filter 13.Each detecting device 12 continues the illumination of the light beam of independent detection incident, and the illumination intensity signal that detects is outputed to control device CONT.
As shown in Figure 3, light filter 13 forms with braid shape pattern by CR etc. on glass plate 13a, so that transmitance is forming along being linear gradually changing in the scope of X-direction, is disposed between the illumination shutter 6 and translucent half-reflecting mirror 11 in each light path.
These translucent half-reflecting mirrors 11, detecting device 12 and light filter 13 are equipped with respectively on each of a plurality of light paths and are provided with.Light filter drive division 14 is based on the indication of control device CONT, and mobile filter 13 on X-direction.Then, by utilizing light filter drive division 14 mobile filters 13, adjust the light quantity of each light path.
The light beam that sees through light quantity adjusting mechanism 10 arrives fly's-eye lens 8 by relay lens 7.Fly's-eye lens 8 forms secondary souce in the outgoing plane side, can be by the field of illumination of uniform illumination irradiation mask M by condenser 9.Then, the exposure light by condenser 9 has right-angle prism 16 by possessing, after the reflection-refraction type optical system of lens combination 17, concave mirror 18 in the illuminator module, pass through fixed field of illumination illumination mask M.Mask M is by the light EL that respectively exposes of transmission illumination system module IMa～IMg, with the different field of illumination of throwing light on respectively.
Support the mask objective table MST of mask M have the long stroke (stroke) on the X-direction that should carry out the one-dimensional scanning exposure, with the Y direction of direction of scanning orthogonal on the stroke of institute's set a distance.As shown in Figure 2, mask objective table MST possesses the mask objective table drive division MSTD that this mask objective table MST is moved in X-direction and Y direction is arranged.Mask objective table drive division MSTD is by control device CONT Be Controlled.
As shown in Figure 1, the X-direction on mask objective table MST and each terminal edge of Y direction are respectively equipped with moving lens 32a, 32b on the direction of orthogonal.Have a plurality ofly on moving lens 32a, present embodiment is the configuration of 2 laser interferometer MX1, MX2 subtend.Subtend disposes laser interferometer MY1 on moving lens 32b in addition.Laser interferometer MX1, MX2 detect the distance with moving lens 32a respectively to moving lens 32a irradiating laser.The testing result of laser interferometer MX1, MX2 is output to control device CONT, and control device CONT asks position and the Z axial rotation amount of mask objective table MST in X-direction based on the testing result of laser interferometer MX1, MX2.In addition.Laser interferometer MY1 detects the distance with moving lens 32b to moving lens 32b irradiating laser.The testing result of laser interferometer MY1 is output to control device CONT, and control device CONT asks the position of mask objective table MST in Y direction based on the testing result of laser interferometer MY1.Then, control device CONT passes through from the position (posture) of the output monitoring mask objective table MST of laser interferometer MX1, MX2 and MY1, and control mask objective table drive division MSTD, and mask objective table MST is set in desirable position (posture).
See through each projection optical system of exposure light EL incident PLa～PLg of mask M.Projection optical system PLa～PLg will be present in pattern image imaging on sensitive substrate P of the field of illumination of mask M, and in the specific region of sensitive substrate (view field) projection exposure pattern image, with the corresponding setting of each illuminator module IM a～IMg.
As shown in Figure 1, among a plurality of projection optical system PLa～PLg, projection optical system PLa, PLc, PLE, PLg and projection optical system PLb, PLd, PLf are the staggered arrangement of 2 row.That is each the projection optical system PLa～PLg that is staggered configuration projection optical system (for example projection optical system PLa and PLb, PLb and PLc) quantitative shift configuration of institute on Y direction each other of making adjacency.These each projection optical system PLa～PLg make a plurality of exposure light EL that penetrate and see through mask M from illuminator module IM a～IMg see through the pattern image of projection mask M on the sensitive substrate P of substrate objective table PST institute mounting.That is, see through the exposure light EL of each projection optical system PLa～PLg, the different view fields on sensitive substrate P, with the pattern image of the field of illumination of corresponding mask M with fixed imaging characteristic carry out imaging.
As shown in Figure 2, each projection optical system PLa～PLg possesses respectively 19,2 groups of reflection-refraction type optical systems 21,22 of image displacement device, visual field diaphragm 20, multiplying power adjusting gear 23 is arranged.Image displacement device 19 by 2 parallel plane glass plates for example respectively around the X-axis or rotation around the Y-axis, with the pattern image of mask M in Y direction or X-direction displacement.After the exposure light EL that sees through mask M sees through image displacement device 19, the 1st group of reflection-refraction type optical system 21 of incident.
Reflection-refraction type optical system 21 is the intermediary images that form the pattern of mask M, possesses right-angle prism 24 is arranged, lens combination 25, concave mirror 26.Right-angle prism 24 is freely rotatable around the Z axle, can make the pattern image rotation of mask M.
In this intermediary image position configuration visual field diaphragm 20 is arranged.Visual field diaphragm 20 is to be set in view field on the sensitive substrate P, in projection optical system PL mask M and sensitive substrate P is disposed at the roughly position of conjugation.See through the 2nd group of reflection-refraction type optical system 22 of light beam incident of visual field diaphragm 20.Reflection-refraction type optical system 22 and reflection-refraction type optical system 21 are same, possess right-angle prism 27 is arranged, lens combination 28, concave mirror 29.Right-angle prism 27 also can rotation can make the pattern image rotation of mask M freely around the Z axle.
The exposure light EL that penetrates from reflection-refraction type optical system 22 is by multiplying power adjusting gear 23, and on sensitive substrate P with the pattern image of mask M with the erect image equimultiple imaging.Multiplying power adjusting gear 23 is made of for example 3 lens of plano-convex lens, two convex lens, plano-convex lens, by two convex lens between plano-convex lens and plano-concave lens are moved in the Z direction relative position is changed, and the multiplying power of the pattern image of mask M is changed.
Support the substrate objective table PST of sensitive substrate P that frame substrate is arranged, keep sensitive substrate P by frame substrate.Substrate objective table PST and mask objective table MST are same, have the long stroke on the X-direction that should carry out the one-dimensional scanning exposure, be used for the Y direction of direction of scanning orthogonal on the long stroke that moves of stepping, as shown in Figure 2, possess the substrate objective table drive division PSTD that this substrate objective table PST is moved in X-direction and Y direction is arranged.Substrate objective table drive division PSTD is by control device CONT Be Controlled.In addition, substrate objective table PST also can move in Z-direction and θ X, θ Y, θ Z direction.
As shown in Figure 1, the X-direction on substrate objective table PST and each terminal edge of Y direction are provided with moving lens (position detecting device) 34a, 34b respectively on the direction of orthogonal.Subtend disposes a plurality ofly on the moving lens 34a that extends along Y direction, and present embodiment is 2 laser interferometer PX1, PX2.In addition, disposing a plurality ofly along subtend on the moving lens 34b of X-direction extension, present embodiment is 3 laser interferometer PY1, PY2, PY3.Here a plurality of laser interferometer PY1, PY2, PY3 uniformly-spaced are set up in parallel along X-direction respectively.Can detect the position detecting device of sensitive substrate P by moving lens 34a and laser interferometer PX1, PX2 formation in the position of X-direction (the 1st direction).Can detect the position detecting device of sensitive substrate P by moving lens 34b and laser interferometer PY1, PY2, PY3 formation in the position of Y direction (the 2nd direction).Laser interferometer PX1, PX2 be respectively to moving lens 34a irradiating laser, detects and the distance of moving lens 34a.The testing result of laser interferometer PX1, PX2 is output to control device CONT, and control device CONT asks position and the Z axial rotation amount of substrate objective table PST in X-direction based on the testing result of laser interferometer PX1, PX2.In addition, laser interferometer PY1～PY3 is to moving lens 34b irradiating laser, detects and the distance of moving lens 34b.The testing result of laser interferometer PY1～PY3 is output to control device CONT, and control device CONT asks the position of substrate objective table PST in Y direction based on the testing result of laser interferometer PY1～PY3.Then, control device CONT passes through from the position (posture) of the output monitoring substrate objective table PST of laser interferometer PX1, PX2 and PY1～PY3, and control basal plate objective table drive division PSTD, and substrate objective table PST is set in desirable position (posture).
Here, control device CONT is when detecting the position of substrate objective table PST in Y direction, according to moving of substrate objective table PST, promptly according to the substrate objective table PST that supports sensitive substrate P in the position of X-direction, switch the laser interferometer that is used for position probing among a plurality of laser interferometer PY1～PY3.
Mask objective table drive division MSTD and substrate objective table drive division PSTD are independently controlled respectively by control device CONT, mask objective table MST and substrate objective table PST can distinguish independent moving on each the basis of driving of mask objective table drive division MSTD and substrate objective table drive division PSTD.Then, control device CONT simultaneously controls two drive division PSTD, MSTD by the position that one side is monitored mask objective table MST and substrate objective table PST, can make mask M and sensitive substrate P to projection optical system PL, with sweep velocity arbitrarily (translational speed synchronously) same moved further on X-direction.
50a～the 50g of view field of projection optical system PLa～PLg is set to the shape that formalizes respectively on sensitive substrate P, is trapezoidal shape in this example.As shown in Figure 1, the 50a of view field, 50c, 50E, 50g and the 50b of view field, 50d, 50f subtend configuration on X-direction.In addition, the 50a～50g of view field is so that overlap on Y direction each other and configuration side by side in abutting connection with the end (interface, junction surface) of view field.Then, by so that the interface of the 50a～50g of view field overlaps on Y direction each other and configuration side by side, the total of the width of the view field of X-direction is set about equally.Exposure when the X-direction scan exposure becomes equal whereby.Like this, the repeat region (junction surface) by setting overlaps the 50a～50g of view field that utilizes projection optical system PLa～PLg respectively can make the variation and the illumination change of the optical aberration at junction surface smoothly carry out.
Then, describe about the levelling AL of system.
The AL of levelling system detects the levelling sign (substrate levelling sign) be located on the sensitive substrate P, as shown in Figures 1 and 2, between projection optical system PLa, the PLc, PLE, PLg and projection optical system PLb, the PLd that are 2 row configurations, PLf with the setting of sensitive substrate P subtend.The AL of levelling system detects a plurality of substrate levelling signs of being located on the sensitive substrate P in a plurality of configurations arranged side by side of Y direction (the 2nd direction).In addition, between projection optical system PLa, the PLc, PLE, PLg and projection optical system PLb, the PLd that are 2 row configurations, PLf, be provided with relative and detect this sensitive substrate P in the substrate-side automatic focusing detection system (AF detection system) 60 of the position of Z-direction, relative with mask M and detect the mask side automatic focusing detection system 70 of this mask M in the position of Z-direction with sensitive substrate P.Each substrate-side AF detection system 60 and also a plurality of configurations arranged side by side on Y direction of mask side AF detection system 70.Here, a plurality of levelling AL of system, substrate-side AF detection system 60 and mask AF detection system 70 as shown in Figure 1, H is supported blocking by support.In the following description, will should be called " levelling unit " by AF detection system 60,70 and the levelling AL of system that support H is supported.
Fig. 4 is the oblique view of levelling unit U.Fig. 5 is the diagram of position relation that is used for illustrating the AL of levelling system, substrate-side AF detection system 60 and mask side AF detection system 70, mask M and the sensitive substrate P of levelling unit U.Here, Fig. 5 (a) is depicted as the position relation of mask M and mask side AF detection system 70, and Fig. 5 (b) is that the A-A of the levelling unit U of Fig. 4 analyses and observe sectional drawing, and Fig. 5 (c) is a planimetric map of observing the substrate objective table PST that supports sensitive substrate P from upside (+Z side).Mask side AF detection system 70 shown in Fig. 5 (a) is equivalent to the B-B cross-section cutaway view of Fig. 4.
Shown in Fig. 4 and Fig. 5 (b), (AL1～AL6) is that Y direction disposes many side by side in non-direction of scanning to the levelling AL of system, is 6 in the present embodiment.AL1～the AL6 of levelling system between projection optical system PLa, the PLc, PLE, PLg and projection optical system PLb, the PLd that are 2 row configurations, PLf, along this projection optical system PLa～PLg the 50a～50g's of view field and the column direction configuration.
Shown in Fig. 5 (b), in a plurality of AL1～AL6 of levelling system arranged side by side of Y direction, AL2～the AL5 of levelling system of Y direction central authorities is located at projection optical system PL (inboard of PLa～PLg), the outside that the AL1 of levelling system of Y direction both sides, AL6 are located at projection optical system PL.Here, as Fig. 5 (b) and (c), among a plurality of levelling AL1～AL6 of system, the interval of 2 in outside levelling AL1 of system and AL6 be set with sensitive substrate P in the length of Y direction about equally.In addition, as Fig. 5 (a) and (b), the interval of 2 in outside levelling AL1 of system and AL6 be set than mask M in the length of Y direction long (more than the length in the Y direction of mask M).
On the other hand, on sensitive substrate P, shown in Fig. 5 (c), be provided with a plurality of levelling signs (the substrate levelling sign) M1～M6 that is used to align processing.In the present embodiment, in sensitive substrate P upper edge Y direction and show levelling sign M1～M6 of 6, be separated with the position, 6 place that is formed at X-direction at interval, all be formed with 36 levelling signs altogether.In addition, the levelling sign is represented with " ● " among the figure, but also available cruciform "+" or box-shaped sign " ".
Present embodiment is on sensitive substrate P, and correspondence is provided with the AL1～AL6 of levelling system at 6 levelling sign M1～M6 arranged side by side of Y direction.Then, each of each and levelling sign M1～M6 that makes these 6 the levelling AL1～AL6 of system is in pairs to setting, AL1～the AL6 of levelling system with the state of each subtend of levelling sign M1～M6, can detect each of these levelling signs M1～M6 simultaneously.That is, present embodiment is set the configuration (at interval) of the levelling AL1～AL6 of system based on the configuration (at interval) of the levelling sign M1～M6 that forms on sensitive substrate P.
Shown in Fig. 4 and Fig. 5 (b), be provided with a plurality of substrate-side AF detection systems 60 (60a～60g) in the X-direction both sides of the levelling AL1～AL6 of system.In the present embodiment, substrate-side AF detection system is provided with 7 60a～60g.Substrate-side AF detection system 60a～60g is located at the position of the sensitive substrate P subtend of being supported with substrate objective table PST, detects the orthogonal direction of sensitive substrate P at plane of exposure respectively, promptly in the position of Z-direction.Among a plurality of substrate-side AF detection system 60a～60g, AF detection system 60a, 60b, 60d, 60f, 60g dispose side by side in Y direction, and AF detection system 60c, 60E dispose side by side in Y direction simultaneously.And this 2 row AF detection system 60a, 60b, 60d, 60f, 60g and AF detection system 60c, 60E will align the AL of system, and (AL1～AL6) seizes configuration on both sides by the arms.
Among a plurality of substrate-side AF detection system 60a～60g, the substrate-side AF detection system 60b～60f of Y direction central authorities is located at projection optical system PL, and (inboard of PLa～PLg), substrate AF detection system 60a, the 60g of Y direction both sides is located at the projection optical system PL (outside of PLa～PLg).Here, the substrate-side AF detection system 60a in the outside, each of 60g, with among a plurality of levelling AL1～AL6 of system the outside 2 the levelling AL1 of system, AL6 each in abutting connection with configuration.The interval of the outside 2 substrate-side AF detection system 60a, 60g also be set with the length of the Y direction of sensitive substrate P about equally.In addition, the substrate-side AF detection system 60b～60f that is located at the inboard of projection optical system PL is the staggered arrangement of 2 row, roughly uniformly-spaced is provided with in Y direction.
Each testing result of substrate-side AF detection system 60a～60g is output to control device CONT, and control device CONT asks the position of sensitive substrate P in Z-direction based on the testing result of substrate-side AF detection system 60a～60g.In addition, substrate-side AF detection system 60a～60g 2 dimensions respectively is disposed at X-direction and Y direction, so control device CONT, can ask the posture of sensitive substrate P in X-axis peripheral direction and Y-axis peripheral direction based on the testing result of a plurality of substrate-side AF detection system 60a～60g.Control device CONT based on try to achieve in the position of Z-direction and in the posture of X-axis, Y-axis peripheral direction, driving substrate objective table drive division PSTD, and carry out sensitive substrate P in the levelling of the position of Z-direction and in the levelling of the posture of X-axis, Y-axis peripheral direction, i.e. smoothing levelling.
Shown in Fig. 4 and Fig. 5 (a), levelling unit U is provided with a plurality of mask side AF detection systems 70 (70a～70d).In the present embodiment, be provided with 4 mask side AF detection system 70a～70d.Mask side AF detection system 70a～70d is located at the position of the subtend of the mask M that mask objective table MST supported, detects the direction that forms the face orthogonal with the pattern of mask M respectively, promptly in the position of Z-direction.Each of a plurality of mask side AF detection system 70a～70d is in the first-class spacing parallel arranging configuration of Y direction.Here shown in Fig. 5 (a), mask side AF detection system 70a～70d be located at projection optical system PL (inboard of PLa～PLg), the interval of the outside 2 mask sides AF detection system 70a～70d be set with mask M in the length of Y direction about equally.
Fig. 6 is the summary pie graph of the AL1 of levelling system.In addition, other the AL2～AL6 of levelling system also is and the identical formation of the levelling AL1 of system.
As shown in Figure 6, the AL1 of levelling system possesses to be had by penetrating the levelling light source 81 that detection constitutes with the Halogen lamp LED that detects light, the light guide 82 that constitutes to the optical fiber of relay lens 83 by the detection photoconduction that will penetrate from light source 81, be located at the translucent half-reflecting mirror 84 in the light path downstream of relay lens 83, be located at translucent half-reflecting mirror 84 and detected object and be sensitive substrate P (between the levelling sign M1～M6), will be by the object lens 85 of detection rayed on sensitive substrate P of translucent half-reflecting mirror 84, the deflection mirror 86 that the reflected light that produces at sensitive substrate P (levelling sign) is directed to by the irradiation that detects light by translucent half-reflecting mirror 84, the reflected light of self-deflection catoptron 86 carries out the spectroscope (branch unit) 87 of branch in the future, the low range levelling receiving system 88 of 2 light beams light beam incident wherein that is branched by spectroscope 87, the high magnification levelling receiving system 89 of another light beam incident.Low range levelling receiving system 88 has low range lens combination 88A and low power with imaging apparatus (CCD) 88B, can the extensive area on the fixed precision instrumentation sensitive substrate P.High magnification levelling receiving system 89 have high power with lens combination 89A and high power with imaging apparatus (CCD) 89B, narrow zone that can high precision instrumentation sensitive substrate P.These low ranges levelling receiving system 88A and high magnification levelling receiving system 88B are in arranged coaxial.And, with detecting the light (reflected light) that the irradiation of light to sensitive substrate P (substrate levelling sign) produces, be subjected to light respectively by levelling by low range levelling receiving system 88 and high magnification levelling receiving system 89.
Low range levelling receiving system 88 is based on from by the optical information of levelling with the extensive area that detects the irradiated sensitive substrate P of light, and (the detection levelling of the positional information of M2～M6) is handled to carry out detecting levelling sign M1 with rough grade.On the other hand, high magnification levelling receiving system 89 is based on from by the optical information of levelling with the narrow zone that detects the irradiated sensitive substrate P of light, carries out that (the precision levelling of the positional information of M2～M6) is handled with high Precision Detection levelling sign M1.Low range levelling receiving system 88 and high magnification levelling receiving system 89 are subjected to light signal to control device CONT output respectively, and control device CONT carries out Flame Image Process based on each the light signal that is subjected to of levelling receiving system 88,89, asks mark position information.Here, control device CONT carries out handling by the precision levelling of high magnification levelling receiving system 89 with reference to the detection levelling result by low range levelling receiving system 88.
When asking mark position information, can ask the mark position from the marginal information of sign by Flame Image Process by the levelling AL of system.In addition, also can use figure comparison (Matching) method as the method for asking the mark position.That is, the continue memory storage (not illustrating) of memory template image of control device CONT is asked the coordinate (position in the moving coordinate system of objective table) of the pattern consistent with model (teMplate) by figure comparison.The bias that control device CONT asks when engaging exposure with this coordinate figure and generated when overlapping exposure, when next time later exposure by to substrate objective table drive division PSTD with corrected parameter, and improve the identical precision in position.
At the above-mentioned levelling AL1 of system (among the AL2～AL6), light source 81, light guide 82 and relay lens system 83 constitute the photosystem that send of levelling system, and spectroscope 87, low range levelling receiving system 88 and high magnification levelling receiving system 89 constitute the receiving system of levelling system.In addition, light source 81 can be each the formation of being located at a plurality of levelling AL1～AL6 of system, also can be the light that will penetrate from 1 light source 81 by a plurality of light guides (optical fiber) 82 branches, and with many light of this branch to aligning the formation that the AL1～AL6 of system supplies with respectively.Levelling is that non-photosensitive is ideal with detection light to the photoresist of sensitive substrate P, can be on the light path between light source 81 and the sensitive substrate P, the formation of the light filter of the light of specific wavelength in the light (white light) that light source 81 that excision is made of Halogen lamp LED penetrates is set.
Fig. 7 is the summary pie graph of expression substrate-side AF detection system 60a.In addition, other substrate-side AF detection system 60b～60g and mask side AF detection system 70a～70d are same formation with AF detection system 60a also.
As shown in Figure 7, AF detection system 60a possess have by penetrate AF that AF constitutes with the LED that detects light with light source 61, make from the detection light incident of light source 61 ejaculations send optical lens system 62, will be by sending optical lens system 62 light from vergence direction lead detected object be the catoptron 63 of sensitive substrate (or mask M), based on the detection light that is shone by catoptron 63, the catoptron 64 of the guides reflected light receiving system 65 that sensitive substrate P (or mask M) is produced, will be subjected to the imaging apparatus (CCD) 66 of light by the light of receiving system 65.Send optical lens system 62 will detect light and be shaped as for example slot-shaped back irradiation sensitive substrate P.Here, as shown in Figure 7, detected object is sensitive substrate P after Δ Z displacement is carried out in the position of Z-direction, from the slot-shaped detection light that vergence direction shone, makes the image space in the X-direction of imaging apparatus 66 carry out Δ X displacement.The image pickup signal of imaging apparatus 66 is output to control device CONT, and control device CONT asks the shift amount Δ Z of sensitive substrate P in Z-direction based on the shift amount Δ X to the reference position of the camera position by imaging apparatus 66.Here, when being set to N doubly when (for example 10 times) to the multiplying power of outgoing plane side from the plane of incidence of sensitive lens system 65, the shifts delta Z of 66 couples of sensitive substrate P of imaging apparatus can N doubly the sensitivity of (10 times) detect.
At above-mentioned AF detection system 60a (among 60b～60g, the 70a～70d), light source 61, the photosystem that send that send optical lens system 62 and catoptron 63 to constitute the AF detection system, catoptron 64, sensitive lens system 65 and imaging apparatus 66 constitute the receiving system of AF detection system.In addition, light source 61 can be to be located at a plurality of AF and to detect system 60a～60g (formation of each of 70a～70d) also can be the light that will penetrate from 1 light source 61 by a plurality of light guides (optical fiber) branch, and with many light of this branch formation to the supply of a plurality of AF system.AF also is that photoresist to sensitive substrate P is that non-photosensitive is ideal with detecting light, can be on the light path between light source 61 and the sensitive substrate P, and the formation of the light filter of the light of specific wavelength in the light that excision light source 61 penetrates is set.
Yet the AL of levelling system in the present embodiment is the disalignment mode, and when aligning processing, the relative position of mask M and the substrate levelling AL of system is that the baseline amount is by instrumentation.Below, describe about the baseline measuring method.
As Fig. 1, Fig. 2 and shown in Figure 5, mask M is provided with the sign (mask side AIS sign) 90 that the baseline instrumentation is used, and substrate objective table PST is provided with the reference feature 92 of the sign (substrate-side AIS sign) 91 that possesses the baseline instrumentation and use.Substrate-side AIS sign 91 is set slightly consistently with the surface (plane of exposure) of sensitive substrate P in the formation position of Z-direction (highly).In addition mask side AIS sign 90 with to the ad-hoc location (for example center) of mask M fixed position relation and being set up.Mask side AIS sign 90 indicates that with substrate-side AIS 91 is corresponding, is set up in parallel in that Y direction is a plurality of respectively.As shown in Figure 2, below reference feature 92, be embedded among the substrate objective table PST by the AIS receiving system 94 of light.AIS receiving system 94 possesses lens combination 95 is arranged, the light of scioptics system 95 is subjected to the imaging apparatus (CCD) 96 of light.
Then, one side simultaneously illustrates the baseline measuring program with reference to Fig. 8.
Shown in Fig. 8 (a), substrate-side AF detection system 60 detect with the reference feature 92 with substrate-side AIS sign 91 of being located at substrate objective table PST between distance, mask side AF detection system 70 detects and has mask side AIS and indicates distance between 90 the mask M simultaneously.Control device CONT asks the distance (step SA1) of mask M and reference feature 92 based on each testing result of substrate-side AF detection system 60 and mask side AF detection system 70.
At this moment, support that laser interferometer MX1, MX2 are passed through in the position of the mask objective table MST of mask M, MY1 is detected, the position of substrate objective table PST is detected by laser interferometer PX1, PX2, PY1.That is to say that mask M (mask objective table MST) is by laser interferometer MY1, substrate objective table PST can detect the Y direction coordinate by any of laser interferometer PY1, PY2, PY3.
Then, shown in Fig. 8 (b), control device CONT is by so-called demonstration with an automatic light meter (TTL) mode, detect the AIS sign 90 of mask M and the AIS sign 91 on the substrate objective table PST with imaging apparatus 96, and ask the relative position (step SA2) of mask M and substrate objective table PST based on this testing result.
Specifically, control device CONT moves mask objective table MST and substrate objective table PST is consistent with the picture of substrate-side AIS sign 91 with the picture that makes mask side AIS sign 90 by imaging apparatus 96, and passes through the mask side AIS sign 90 of lamp optical system IL illumination mask M.Illumination light (exposure light) by mask M is indicating 91 by passing through substrate-side AIS in the projection optical system PL, and is directed to imaging apparatus 96.Here, control device CONT is based on the distance of mask M that is tried to achieve by step SA1 and reference feature 92, adjust substrate objective table PST in the position of Z-direction and the picture characteristic of projection optical system PL, and make each picture of mask side AIS sign 90 and substrate-side AIS sign 91 pass through imaging apparatus 96 and imaging (focusing).At this moment, support that laser interferometer MX1, MX2 are passed through in the position of the mask objective table MST of mask M, MY1 is detected, the position of substrate objective table PST is detected by laser interferometer PX1, PX2, PY1.In addition, when use exposure light is made a video recording AIS sign 90,91 by imaging apparatus 96,, can drive for example interior light filter 13 of lamp optical system IL in order on imaging apparatus 96, to obtain the suitableeest light quantity (illumination).
Then, shown in Fig. 8 (c), control device CONT moving substrate objective table PST, and make the AIS sign 91 of substrate objective table PST consistent with the measurement region center (specifically being located at the index sign of measurement region) of the levelling AL of system, detect the position (step SA3) of the substrate objective table PST of this moment by laser interferometer PX1, PX2, PY1.
From the stage position testing result of utilizing laser interferometer of being tried to achieve by step SA2 and step SA3, can ask the relative position of mask M and the levelling AL of system is the baseline amount.Then, based on the baseline amount of being tried to achieve, the sensitive substrate P that control device CONT makes institute's mounting on the substrate objective table PST by the AL of levelling system to mask M position coincide (levelling).
In addition, the baseline instrumentation can carry out when every exposure-processed begins, also can every fix time (for example per 10 hours, every day etc.) and whenever predefinedly decide lot number and carry out.Can one side above-mentioned AIS sign 90,91 be made a video recording by imaging apparatus 96, one side drives projection optical system PL (the image displacement device 19 of PLa～PLg), multiplying power adjusting gear 23 and as the right- angle prism 24,27 of rotation adjuster, and adjust each displacement, calibration and rotation iseikonia characteristic of projection optical system PLa～PLg.
Then, by the exposure device EX of the above-mentioned AL of levelling system is arranged, describe in the method that sensitive substrate P exposes about the method for levelling mask M and sensitive substrate P and with the pattern of mask M.Present embodiment is as shown in Figure 9, sets 9 patterns and form zone (exposure area) PA1～PA9 on sensitive substrate P, and each that these patterns are formed regional PA1～PA9 is carried out exposure-processed and formed element.Here, a plurality of patterns form among regional PA1～PA9, pattern forms regional PA1～PA3 and sets side by side last 3 of Y direction (the 2nd direction), and pattern forms regional PA4～PA6 3 settings side by side on Y direction, and pattern forms regional PA7～PA9 3 arranged side by side settings on Y direction.
Pattern forms each of regional PA1～PA9, is set greater than Y direction in the size of X-direction.And, on Y direction among a plurality of levelling sign M1～M6 arranged side by side, each interval of levelling sign M1～M6 is preestablished, so that being disposed at pattern, levelling sign M1, M2 form regional PA3, PA6, PA9, levelling sign M3, M4 are disposed at pattern and form regional PA2, PA5, PA8, and levelling sign M5, M6 are disposed at pattern and form regional PA1, PA4, PA7.At levelling sign M1～M6 arranged side by side on the Y direction by on X-direction, being separated with predefined arranged spaced, form each four jiaos of configuration levelling signs M1, the M2 of regional PA3, PA6, PA9 at pattern, form each four jiaos of configuration levelling signs M3, the M4 of regional PA2, PA5, PA8 at pattern, form each four jiaos of configuration levelling signs M5, the M6 of regional PA1, PA4, PA9 at pattern.
Here, in the following description, will form regional PA1～PA3 at Y direction pattern arranged side by side as one sees fit and be called " subregion BR1 ", and pattern be formed regional PA4～PA6 be called " subregion BR2 ", and pattern be formed regional PA7～PA9 be called " subregion BR3 ".Therefore sensitive substrate P is set to 3 subregion BR1, BR2, the BR3 of cutting apart about X-direction.And, in the configuration (at interval) of X-direction laser interferometer PY1 arranged side by side～PY3, on sensitive substrate P with in the X-direction corresponding setting of a plurality of subregion BR1, BR2, BR3 arranged side by side.That is, the interval of laser interferometer PY1～PY3 according to pattern form regional PA1, PA4, PA7 is set in the length of X-direction.In addition, sensitive substrate P is a large substrate, and moving lens 34b is shorter in the length of X-direction than sensitive substrate P in the length of X-direction, and moving lens 34b is manufactured with high manufacturing accuracy.
Following one side describes about levelling handling procedure and exposure treating programme with reference to the process flow diagram one side of Figure 10～Figure 15 and Figure 16, Figure 17.
As utilize carry out the baseline instrumentation as described in Fig. 8 after, shown in Figure 10 (a), control device CONT moving substrate objective table PST, and make the 1st row that begin from-X side of being located at sensitive substrate P levelling sign M1～M6 each and align each of the AL1～AL6 of system relative to.As mentioned above, present embodiment is set the configuration (at interval) of the levelling AL1～AL6 of system based on the configuration (at interval) of the levelling sign M1～M6 that forms at sensitive substrate P.Then, control device CONT utilizes laser interferometer PX1, PX2 to detect in the position of X-direction and θ Z direction substrate objective table PST at this moment, select simultaneously to form 1 corresponding laser interferometer PY1 of regional PA1～PA3 (subregion BR1) with pattern among a plurality of laser interferometer PY1～PY3, and substrate objective table PST is detected with laser interferometer PY1 in the position of Y direction.At this moment, laser interferometer PY2, PY3 discord moving lens 34b subtend.Then, control device CONT one side detects the position of substrate objective table PST by laser interferometer, one side is so that the state of the levelling AL1～AL6 of system and the 1st row levelling sign M1～M6 subtend of beginning from-X side, detects simultaneously and each the corresponding levelling sign M1～M6 (step SB1) that forms zone (exposure area) PA1～PA3 at a plurality of patterns arranged side by side of Y direction.
At this moment, form at pattern and to dispose 2 levelling signs M5, M6 on the regional PA1, form at pattern and to dispose 2 levelling signs M3, M4 on the regional PA2, form at pattern and to dispose 2 levelling signs M5, M6 on the regional PA3, corresponding with these levelling signs, pattern is formed regional PA1 dispose 2 the levelling AL5 of system, AL6, pattern is formed regional PA2 dispose 2 the levelling AL3 of system, AL4, pattern is formed regional PA3 dispose 2 the levelling AL1 of system, AL2.That is, a plurality of levelling AL1～AL6 of system for form zone (exposure area) PA1～PA3 (each corresponding formation that respectively disposes 2 of PA4～PA6, PA7～PA9) at Y direction pattern arranged side by side.
Then, shown in Figure 10 (b), control device CONT moves substrate objective table PST at-directions X, and make the 2nd row that begin from-X side of being located at sensitive substrate P levelling sign M1～M6 each and align each of the AL1～AL6 of system relative to, when detecting the position of substrate objective table PST in Y direction by laser interferometer PY1, detect substrate objective table PST in the position of X-axis and θ Z direction by laser interferometer PX1, PX2, and detect each levelling sign M1～M6 (step SB2) simultaneously.
Control device CONT forms each of regional PA1～PA3 to pattern, 2 positions of interval institute set a distance on X-direction, carry out the position probing of the levelling sign and the 2nd levelling sign that is listed as of the 1st row, based on these testing results, ask correction to form the corrected parameter (step SB3) of displacement, calibration and the rotation iseikonia characteristic of regional PA1～PA3 about each pattern.
Here, after the levelling Mark Detection of the 1st row, in order to detect the levelling sign of the 2nd row, sensitive substrate P will exchange positive unit U and scan, but, align among the unit U each this moment, detect the surface elevation position of sensitive substrate P in X-direction with institute's spaced apart at Y direction a plurality of substrate detection system 60a～60g arranged side by side.Promptly, the surface elevation position of sensitive substrate P is detected in tessellated a plurality of positions, each testing result of these substrates AF detection system 60a～60g is output to control device CONT, control device CONT is based on the testing result of substrate AF detection system 60a～60g, asks the pattern of sensitive substrate P to form each surface configuration (step SB4) of regional PA1～PA3.
Yet as mentioned above, on 2 levelling service system AL1 of the outside in a plurality of levelling AL1～AL6 of system and the AL6, substrate AF detection system 60a and 60g are in abutting connection with setting.Therefore, utilize substrate AF detection system 60a and 60g to monitor the positional information of sensitive substrate P by one side in Z-direction, one side utilizes the levelling system to align processing, when levelling was handled, can suppress had the big state that depart to align the unfavorable condition of processing from the imaging surface of projection optical system to Z-direction with sensitive substrate P.
And, on the levelling AL1～AL6 of system,, be provided with the low range levelling receiving system 88 of surveying usefulness and the high magnification levelling receiving system 89 of accurate levelling usefulness as utilizing as described in Fig. 6.Therefore, for example in the time can not using the levelling Mark Detection of high magnification levelling receiving system 89, align Mark Detection, make the levelling Mark Detection become possibility by switching to low range levelling receiving system 88.Like this, align Mark Detection, can successfully align processing by switching low range and high magnification levelling receiving system.In addition, low range and high magnification levelling receiving system need not be located at all AL1～AL6 of levelling system, can be located at the outside 2 levelling AL1 of system and AL6 at least.Also there is no can not even certainly be provided with on all AL1～AL6 of levelling system.
Then, control device CONT based on the corrected parameter correction of trying to achieve by step SB3 as characteristic after, simultaneously carry out the position probing of substrate objective table PST by laser interferometer PY1 and PX1, PX2, one side carries out pattern is formed the exposure-processed (step SB5) of regional PA1.
That is, shown in Figure 10 (c), control device CONT moving substrate objective table PST is so that projection optical system PL and pattern form regional PA1's+the terminal subtend of X side.Simultaneously, control device CONT also with the mask objective table MST of not illustrated support mask M among Figure 10 in-X side shifting, and mask M is coincide to sensitive substrate P position.Then, make mask M and sensitive substrate P to projection optical system PL same moved further on+directions X by one side, one side forms regional PA1 to pattern and carries out exposure-processed with exposure light EL illumination mask M.Figure 10 (d) is depicted as the state after the scan exposure that pattern is formed regional PA1 finishes.Here, surface configuration data based on the sensitive substrate P that tries to achieve by step SB4 (pattern forms regional PA1), surperficial consistent for the imaging surface that makes projection optical system and sensitive substrate P, one side moves substrate objective table PST on Z-direction or θ X, θ Y direction, the posture of sense of control photopolymer substrate P, one side is carried out scan exposure.In addition, among a plurality of projection optical system PLa～PLg, obsolete projection optical system (for example forming projection optical system PLa, the PLg etc. that regional PA1 exceeds from pattern) is covered its light path by illumination shutter 6.
Then, control device CONT based on the corrected parameter correction as characteristic after, one side is carried out the position probing of substrate objective table PST by laser interferometer PY1 and PX1, PX2, one side carries out pattern is formed the exposure-processed (step SB6) of regional PA1.
That is, shown in Figure 11 (a), control device CONT at-Y direction stepping moving substrate objective table PST so that projection optical system PL and pattern form regional PA2's-the terminal subtend of X side.At this moment, mask objective table MST only carries out fine motion for the position that makes mask M and sensitive substrate P coincide, and can not move substantially.Then, make mask M and sensitive substrate P to projection optical system PL same moved further on-directions X by one side, one side forms regional PA2 to pattern and carries out exposure-processed with exposure light EL illumination mask M.Figure 11 (b) is depicted as the state after the scan exposure that pattern is formed regional PA2 finishes.Even when pattern is formed the scan exposure of regional PA2, form the surface configuration data of regional PA2 based on the pattern of trying to achieve by step SB4, can simultaneously carry out sensitive substrate P and carry out scan exposure in the position control and the leveling control one side of Z-direction.
Here, when the scan exposure that pattern is formed regional PA1 was handled, sensitive substrate P was in+directions X scanning, and when the scan exposure that forms regional PA2 at the pattern that pattern is formed regional PA1 adjacency was handled, sensitive substrate P was in-directions X scanning.Promptly, employing is with after the pattern arranged side by side along Y direction forms 2 places position probing levelling sign on each corresponding X-direction of regional PA1～PA3, by form the expose formation of sensitive substrate P of same moved further reverse each other on regional PA1, the PA2 at a plurality of patterns along the Y direction adjacency.Can improve the productive capacity of exposure device integral body whereby.Promptly, after originally 1 pattern being formed the exposure-processed end in zone, in order to carry out next pattern is formed the exposure-processed in zone, mask M is significantly moved on the direction of scanning to return original state, but present embodiment is after the exposure-processed that 1 pattern is formed the zone finishes, in that being formed, next pattern need not significantly mobile mask (mask objective table) when exposure-processed is carried out in the zone, thus can reduce the traveling time of this mask, thus improve productive capacity.And in the present embodiment, it is littler than direction of scanning (X-direction) in the size of non-direction of scanning (Y direction) that pattern forms the zone, so with make mask mobile phase ratio significantly on the direction of scanning, shown in Figure 10 (d)～Figure 11 (a), it is effective making sensitive substrate P stepping on Y direction move shortening displacement.
Then, control device CONT based on the corrected parameter correction as characteristic after, one side is carried out the position probing of substrate objective table PST by laser interferometer PY1 and PX1, PX2, one side carries out pattern is formed the exposure-processed (step SB7) of regional PA3.
That is, shown in Figure 11 (c), control device CONT at-Y direction stepping moving substrate objective table PST so that projection optical system PL and pattern form regional PA3's+the terminal subtend of X side.At this moment, mask objective table MST also only carries out fine motion for the position that makes mask M and sensitive substrate P coincide, and can not move substantially.Then, make mask M and sensitive substrate P to projection optical system PL same moved further on+directions X by one side, one side forms regional PA3 to pattern and carries out exposure-processed with exposure light EL illumination mask M.Figure 11 (d) is depicted as the state after the scan exposure that pattern is formed regional PA3 finishes.Even when pattern is formed the scan exposure of regional PA3, form the surface configuration data of regional PA2 based on the pattern of trying to achieve by step SB4, can simultaneously carry out sensitive substrate P and carry out scan exposure in the position control and the leveling control one side of Z-direction.In this case, also adopt the direction of scanning when pattern formed the exposure-processed of regional PA3, the backward formation of the direction of scanning when being configured to pattern to adjacency and forming the exposure-processed of regional PA2.
The substrate objective table PST of above-mentioned steps SB1～SB7 is in the position probing of X-direction, promptly a plurality of patterns are formed the position probing of X-direction in the levelling processing of regional PA1～PA3 (subregion BR1) and the exposure-processed, as Figure 10 and shown in Figure 11, undertaken by laser interferometer PX1, PX2, undertaken by laser interferometer PY1 in the position probing of Y direction.That is, the laser interferometer that is used for position probing in a plurality of laser interferometer PY1～PY3 arranged side by side of X-direction is 1 PY1.Then, carry out position probing by this 1 laser interferometer PY1, and align Mark Detection and carry out mask M and after the levelling of sensitive substrate P handled, the pattern of mask M was exposed to pattern and forms regional PA1～PA3 based on the position probing value of this laser interferometer PY1.And, here each that forms regional PA1～PA3 at a plurality of patterns arranged side by side of Y direction is by continuous exposure successively, in this continuous exposure, form the corresponding specific laser interferometer PY1 of regional PA1～PA3 (subregion BR1) with pattern among a plurality of laser interferometer PY1～PY3 and form the formation that can be used to position probing simultaneously.
Then, shown in Figure 12 (a), a moving substrate objective table of control device CONT PST, one side make be located at sensitive substrate P begin each and each subtend of the levelling AL1～AL6 of system of the levelling sign M1～M6 of the 3rd row from-X side.Then, control device CONT selects to form 1 corresponding laser interferometer PY2 of regional PA4～PA6 (subregion BR2) with pattern among a plurality of laser interferometer PY1～PY3.Control device CONT follows substrate objective table PST the moving of the position of X-direction, and will be used for the laser interferometer of substrate objective table PST in the position probing of Y direction, switches to the laser interferometer PY2 (step SB8) of this selection from laser interferometer PY1.
Then, control device CONT utilizes laser interferometer PX1, PX2 to detect substrate objective table PST at this moment in the position of X-direction and θ Z direction, utilizes laser interferometer PY2 to detect the position of substrate objective table PST in Y direction simultaneously.Control device CONT one side detects the position of substrate objective table PST by laser interferometer, one side is so that the levelling AL1～AL6 of system and begin the state of each subtend of the levelling sign M1～M6 of the 3rd row from-X side, detects simultaneously and each the corresponding levelling sign M1～M6 (step SB9) that forms zone (exposure area) PA4～PA6 at a plurality of patterns arranged side by side of Y direction.
With laser interferometer when PY1 switches to PY2, the position probing result of laser interferometer PY1 is used to the position probing of laser interferometer PY2.Specifically, control device CONT is when laser interferometer PY1 switches to laser interferometer PY2, for example decide in the position probing action of the substrate objective table PST that passes through laser interferometer PY1 of number of times carrying out, also carry out decide the position probing action of the substrate objective table PST that passes through laser interferometer PY2 of number of times, and ask mean value poor of these testing results.Then, be modified value with this difference of trying to achieve, and carry out the position probing action of the substrate objective table PST by laser interferometer PY2 based on this modified value.Like this, in that (it is in the position probing action of laser interferometer PY2 that pattern forms the part that the levelling of regional PA4～PA6) handles, and (part that pattern forms the levelling result of regional PA1～PA3) is the position probing result of laser interferometer PY1 to the subregion BR1 that has used in the X-direction adjacency about subregion BR2.
At this moment, make laser interferometer PY2 action, the difference of instrumentation laser interferometer PY1 and PY2 is as skew 1 memory.After, the Y coordinate of substrate objective table PST can be tried to achieve by instrumentation value and the skew 1 of laser interferometer PY2.
Then, shown in Figure 12 (b), control device CONT is at-directions X moving substrate objective table PST, and make be located at sensitive substrate P begin each and each subtend of the levelling AL1～AL6 of system of the levelling sign M1～M6 of the 4th row from-X side, when detecting the position of substrate objective table PST in Y direction by laser interferometer PY2, detect substrate objective table PST in the position of X-direction and θ Z direction by laser interferometer PX1, PX2, and detect each (step SB10) that these levelling indicate M1～M6 simultaneously.
Control device CONT forms each of regional PA4～PA6 to pattern, the position, 2 place of interval institute set a distance on X-direction, carry out the position probing of the levelling sign and the 2nd levelling sign that is listed as of the 1st row, based on these testing results, ask correction to form the corrected parameter (step SB11) of displacement, calibration and the rotation iseikonia characteristic of regional PA4～PA6 about each pattern.
Here, after the levelling Mark Detection of the 3rd row, in order to detect the levelling sign of the 4th row, sensitive substrate P will exchange positive unit U and scan, align this moment among the unit U in each of Y direction a plurality of substrate AF detection system 60a～60g arranged side by side, on X-direction, detect the height and position on the surface of sensitive substrate P with institute's spaced apart.Each testing result of these substrates AF detection system 60a～60g is output to control device CONT, control device CONT is based on the testing result of substrate detection system 60a～60g, asks the pattern of sensitive substrate P to form each surface configuration (step SB12) of regional PA4～PA6.
Then, control device CONT based on the corrected parameter correction of trying to achieve by step SB11 as characteristic after, one side is by the position of laser interferometer PY2 and PX1, PX2 detection substrate objective table PST, and one side carries out pattern is formed the exposure-processed (step SB13) of regional PA4.
That is, shown in Figure 12 (c), control device CONT moving substrate objective table PST is so that projection optical system PL and pattern form regional PA4's+the terminal subtend of X side.Then, make mask M and sensitive substrate P with exposure light EL illumination mask M, form regional PA4 to pattern and carry out exposure-processed with the moved further one side at+directions X by one side to projection optical system PL.Figure 12 (d) is depicted as the state after the scan exposure that pattern is formed regional PA4 finishes.Here, surface configuration data based on the sensitive substrate P that tries to achieve by step SB12 (pattern forms regional PA4), surperficial consistent for the imaging surface that makes projection optical system and sensitive substrate P, one side moves and the posture of sense of control photopolymer substrate P substrate objective table PST on Z-direction or θ X, θ Y direction, one side is carried out scan exposure.
Then, control device CONT based on the corrected parameter correction as characteristic after, one side detects the position of substrate objective table PST by laser interferometer PY2 and PX1, PX2, one side carries out pattern is formed the exposure-processed (step SB14) of regional PA5.
That is, shown in Figure 13 (a), control device CONT at-Y direction stepping moving substrate objective table PST so that projection optical system PL and pattern form regional PA5's-the terminal subtend of X side.At this moment, mask objective table MST only carries out fine motion for the position that makes mask M and sensitive substrate P coincide, and can not move substantially.Then, make mask M and sensitive substrate P to projection optical system PL same moved further on-directions X by one side, one side forms regional PA5 to pattern and carries out exposure-processed with exposure light EL illumination mask M.Figure 13 (b) is depicted as the state after the scan exposure that pattern is formed regional PA5 finishes.
Then, control device CONT based on the corrected parameter correction as characteristic after, one side detects the position of substrate objective table PST by laser interferometer PY2 and PX1, PX2, one side carries out pattern is formed the exposure-processed (step SB15) of regional PA6.
That is, shown in Figure 13 (c), control device CONT at-Y direction stepping moving substrate objective table PST so that projection optical system PL and pattern form regional PA6's+the terminal subtend of X side.At this moment, mask objective table MST also only carries out fine motion for the position that makes mask M and sensitive substrate P coincide, and can not move substantially.Then, make mask M and sensitive substrate P to projection optical system PL same moved further on+directions X by one side, one side forms regional PA6 to pattern and carries out exposure-processed with exposure light EL illumination mask M.Figure 13 (d) is depicted as the state after the scan exposure that pattern is formed regional PA6 finishes.
The substrate objective table PST of above-mentioned steps SB9～SB15 is undertaken by laser interferometer PX1, PX2 in the position probing of X-direction, is undertaken by laser interferometer PY1 in the position probing of Y direction.That is, the laser interferometer that is used for position probing in a plurality of laser interferometer PY1～PY3 arranged side by side of X-direction is 1 PY2.Then, carry out position probing by this 1 laser interferometer PY2, and align Mark Detection and carry out mask M and after the levelling of sensitive substrate P handled, the pattern of mask M was exposed to pattern and forms regional PA4～PA6 based on the position probing value of this laser interferometer PY2.And, here also be form regional PA4～PA6 at a plurality of patterns arranged side by side of Y direction each by continuous exposure successively, in this continuous exposure, form the corresponding specific laser interferometer PY2 of regional PA4～PA6 (subregion BR2) with pattern among a plurality of laser interferometer PY1～PY3 and form the formation that can be used to position probing simultaneously.
Then, control device CONT switches to PY3 (step SB16) with the laser interferometer of using from PY2.
Then, shown in Figure 14 (a), a moving substrate objective table of control device CONT PST, one side make be located at sensitive substrate P begin each and each subtend of the levelling AL1～AL6 of system of the levelling sign M1～M6 of the 5th row from-X side.Then, control device CONT selects to form 1 corresponding laser interferometer PY3 of regional PA7～PA9 (subregion BR3) with pattern among a plurality of laser interferometer PY1～PY3.Control device CONT follows substrate objective table PST the moving of the position of X-direction, and will be used for the laser interferometer of substrate objective table PST in the position probing of Y direction, switches to the laser interferometer PY3 (step SB16) of this selection from laser interferometer PY2.
Then, control device CONT utilizes laser interferometer PX1, PX2 to detect substrate objective table PST at this moment in the position of X-direction and θ Z direction, utilizes laser interferometer PY3 to detect the position of substrate objective table PST in Y direction simultaneously.Control device CONT one side detects the position of substrate objective table PST by laser interferometer, one side is so that the levelling AL1～AL6 of system and begin the state of each subtend of the levelling sign M1～M6 of the 5th row from-X side, detects simultaneously and each the corresponding levelling sign M1～M6 (step SB17) that forms zone (exposure area) PA7～PA9 at a plurality of patterns arranged side by side of Y direction.
At this moment, make laser interferometer PY3 action, the difference of laser interferometer PY2 and PY3 is remembered as skew 2.After, substrate objective table PST coordinate can be tried to achieve by instrumentation value, skew 1, the skew 2 of laser interferometer PY3.
Here, with laser interferometer when PY2 switches to PY3, the position probing result of laser interferometer PY2 also is used to the position probing of laser interferometer PY3.Promptly, in that (it is in the position probing action of laser interferometer PY3 that pattern forms the part that the levelling of regional PA7～PA9) handles, and (part that pattern forms the levelling result of regional PA4～PA6) is the position probing result of laser interferometer PY2 to the subregion BR2 that has used in the X-direction adjacency about subregion BR3.
Then, shown in Figure 14 (b), control device CONT is at-directions X moving substrate objective table PST, and make be located at sensitive substrate P begin each and each subtend of the levelling AL1～AL6 of system of the levelling sign M1～M6 of the 6th row from-X side, when detecting the position of substrate objective table PST in Y direction by laser interferometer PY3, detect substrate objective table PST in the position of X-direction and θ Z direction by laser interferometer PX1, PX2, and detect each (step SB18) that these levelling indicate M1～M6 simultaneously.
Control device CONT forms each of regional PA7～PA9 to pattern, the position, 2 place of interval institute set a distance on X-direction, carry out the position probing of the levelling sign and the 6th levelling sign that is listed as of the 5th row, based on these testing results, ask correction to form the corrected parameter (step SB19) of displacement, calibration and the rotation iseikonia characteristic of regional PA7～PA9 about each pattern.
Here, after the levelling Mark Detection of the 5th row, in order to detect the levelling sign of the 6th row, when sensitive substrate P exchanges positive unit U and scans, in each of Y direction a plurality of substrate AF detection system 60a～60g arranged side by side, on X-direction, detect the height and position on the surface of sensitive substrate P with institute's spaced apart.Each testing result of these substrates AF detection system 60a～60g is output to control device CONT, control device CONT is based on the testing result of substrate detection system 60a～60g, asks the pattern of sensitive substrate P to form each surface configuration (step SB20) of regional PA7～PA9.
Then, control device CONT based on the corrected parameter correction of trying to achieve by step SB18 as characteristic after, one side is by the position of laser interferometer PY3 and PX1, PX2 detection substrate objective table PST, and one side carries out pattern is formed the exposure-processed (step SB21) of regional PA7.
That is, shown in Figure 14 (c), control device CONT moving substrate objective table PST is so that projection optical system PL and pattern form regional PA7's+the terminal subtend of X side.Then, make mask M and sensitive substrate P with exposure light EL illumination mask M, form regional PA7 to pattern and carry out exposure-processed with the moved further one side at+directions X by one side to projection optical system PL.Figure 14 (d) is depicted as the state after the scan exposure that pattern is formed regional PA7 finishes.Here, surface configuration data based on the sensitive substrate P that tries to achieve by step SB19 (pattern forms regional PA7), surperficial consistent for the imaging surface that makes projection optical system and sensitive substrate P, one side moves and the posture of sense of control photopolymer substrate P substrate objective table PST on Z-direction or θ X, θ Y direction, one side is carried out scan exposure.
Then, control device CONT based on the corrected parameter correction as characteristic after, one side detects the position of substrate objective table PST by laser interferometer PY3 and PX1, PX2, one side carries out pattern is formed the exposure-processed (step SB22) of regional PA8.
That is, shown in Figure 15 (a), control device CONT at-Y direction stepping moving substrate objective table PST so that projection optical system PL and pattern form regional PA8's-the terminal subtend of X side.At this moment, mask objective table MST only carries out fine motion for the position that makes mask M and sensitive substrate P coincide, and can not move substantially.Then, make mask M and sensitive substrate P to projection optical system PL same moved further on-directions X by one side, one side forms regional PA8 to pattern and carries out exposure-processed with exposure light EL illumination mask M.Figure 15 (b) is depicted as the state after the scan exposure that pattern is formed regional PA8 finishes.
Then, control device CONT based on the corrected parameter correction as characteristic after, one side detects the position of substrate objective table PST by laser interferometer PY3 and PX1, PX2, one side carries out pattern is formed the exposure-processed (step SB23) of regional PA9.
That is, shown in Figure 15 (c), control device CONT at-Y direction stepping moving substrate objective table PST so that projection optical system PL and pattern form regional PA9's+the terminal subtend of X side.At this moment, mask objective table MST also only carries out fine motion for the position that makes mask M and sensitive substrate P coincide, and can not move substantially.Then, make mask M and sensitive substrate P to projection optical system PL same moved further on+directions X by one side, one side forms regional PA9 to pattern and carries out exposure-processed with exposure light EL illumination mask M.Figure 15 (d) is depicted as the state after the scan exposure that pattern is formed regional PA9 finishes.
The substrate objective table PST of above-mentioned steps SB17～SB23 is in the position probing of X-direction, promptly a plurality of patterns are formed the position probing of X-direction in the levelling processing of regional PA7～PA9 (subregion BR3) and the exposure-processed, as Figure 14 and shown in Figure 15, undertaken by laser interferometer PX1, PX2, undertaken by laser interferometer PY3 in the position probing of Y direction.That is, the laser interferometer that is used for position probing in a plurality of arranged side by side laser interferometer PY1～PY3 of X-direction is 1 PY3.Then, carry out position probing by this 1 laser interferometer PY3, and align Mark Detection and carry out mask M and after the levelling of sensitive substrate P handled, the pattern of mask M was exposed to pattern and forms regional PA7～PA9 based on the position probing value of this laser interferometer PY3.And, here also be form regional PA7～PA9 at a plurality of patterns arranged side by side of Y direction each by continuous exposure successively, in this continuous exposure, form the corresponding specific laser interferometer PY3 of regional PA7～PA9 (subregion BR3) with pattern among a plurality of laser interferometer PY1～PY3 and form the formation that can be used to position probing simultaneously.
As described above, the non-direction of scanning that in the direction of scanning to mask M and sensitive substrate P is the intersection of Y direction is on the X-direction, dispose 6 levelling AL of system side by side, so can not reduce the number of the levelling sign M1～M6 that should detect, align the detection action frequency that indicates M1～M6 with comparing originally just can reduce.Therefore, can simultaneously keep the levelling precision and simultaneously shorten the levelling processing time.
In addition, in the present embodiment, the levelling system is totally 6 of AL1～AL6, but also can dispose 3 at least side by side on Y direction, reduces the number of levelling sign whereby, can reduce the detection action frequency of levelling sign.And, use these a plurality of levelling systems arranged side by side, simultaneously a plurality of patterns of instrumentation form each levelling sign of zone, so can improve productive capacity.
The AL of levelling system in the present embodiment is the levelling system of disalignment direction.Therefore, compare with levelling system by the projection optical system PL instrumentation mask levelling simultaneously sign and the TTL direction of substrate levelling sign, be a kind of formation that does not directly detect mask levelling sign, so the interval of 2 levelling in the outside AL1 of system, AL6 among the levelling AL1～AL6 of system can be set greater than the width (in the length of Y direction) of mask M.Therefore, the configuration of the levelling AL1～AL6 of system can have nothing to do with the width of mask M and freely set.
The detection of levelling mask is separated with the formation that carry out the position, 2 place of institute's set a distance for 1 pattern is formed the zone on X-direction, so based on these mask testing results, but precision is aligned processing well.In addition, the levelling Mark Detection both can be separated with the position, at least 2 place of institute's set a distance on X-direction carries out, and also can carry out a plurality of arbitrarily positions more than 3 places.By the detection position that the levelling mask detects is set, can improve accuracy of detection more.
When scan exposure when the pattern of Y direction adjacency forms each of zone, carry out the scan exposure processing by utilization is backward each other with moved further, can be after the exposure-processed that Fig. 1 case is formed the zone finishes, also need not significantly mobile mask (mask objective table) when carrying out that the 2nd pattern formed the exposure-processed in zone, so can reduce the traveling time of this mask, thereby improve productive capacity.
In addition, present embodiment switches with the interferometer that PY1 → PY2, PY2 → PY3 are carried out in levelling synchronously, but so long as 2 movable positions of interferometer where can, also can be exposure midway with the end exposure point.So, even the 1st layer the exposure that need not to align also can become and arrange the good exposure of precision.
The instrumentation of skew can be by carrying out repeatedly instrumentation and equalization to improve precision repeatedly.In addition, equalization carry out 0.1～0.2SEc when above effect big.
Yet, as mentioned above, 1 pattern being formed the zone, it is preferable that levelling sign for example is located at 4 jiaos.By 1 pattern being formed the zone 4 levelling signs are set, but precision is asked displacement, calibration, rotation and quadrature degree iseikonia characteristic well, aligns processing accurately.And, for instrumentation simultaneously is located in 4 jiaos the levelling sign at Y direction 2 levelling signs arranged side by side, pattern being formed each of zone, the levelling system disposes 2 at least for preferable on Y direction.Yet, suitably changed according to making element because the pattern that sets on sensitive substrate P forms the size and the number in zone, so the configuration by the levelling system can be created in 1 pattern and form the situation that the zone does not dispose 2 levelling systems.But, be the interval optimization that parameter makes the levelling system by width (length of Y direction) with sensitive substrate P, even pattern forms the size and the number of variations in zone, also can form 2 levelling systems of area configurations to 1 pattern.
For example, when the levelling AL of system is that AL1～AL6 is totally 6 the time, by setting the interval that is configured to satisfy AL1 of levelling system and AL2≤(2/7) * L of the levelling AL1～AL6 of system ... (1) interval≤(1/5) * L of levelling AL3 of system and AL4 ... (2) interval≤(2/7) * L of levelling AL5 of system and AL6 ... (3) interval≤L of levelling AL1 of system and AL6 ... (4) condition, even pattern forms the size and the number of variations in zone, also can form 2 levelling systems of area configurations to 1 pattern.
About this situation, one side simultaneously describes with reference to Figure 18.
The sensitive substrate P that Figure 18 (a1) is depicted as the wide L of Y direction is divided into two along Y direction, is divided into two along X-direction, set to amount to 4 patterns and forms the zone, and form the occasion that forms picture (pattern) on each of zone at these 4 patterns.Here, the mask M shown in Figure 18 (a2) is used to exposure-processed.Be formed with " NO.1 " pattern on the mask M.Among Figure 18 (a1), the levelling system that white circle " zero " expression is used forms regional PA2 to pattern in this example and uses the levelling AL1 of system, AL3, pattern is formed regional PA1 use the levelling AL4 of system, AL6.Here, on sensitive substrate P, be formed with corresponding levelling sign with the levelling AL1～AL6 of system.AL1～the AL6 of levelling system above-mentioned to satisfy (1)～(4) formula is that purpose is configured, and disposes 2 at least so 1 pattern is formed the zone, and the example of Figure 18 (a1) is 3 levelling systems.Here, it is identical at the width of Y direction that each pattern forms the zone.
The sensitive substrate P that Figure 18 (b1) is depicted as wide L is divided into three along Y direction one, is divided into two along X-direction, set to amount to 6 patterns and forms the zone, and form the occasion that forms picture (pattern) on each of zone at these 6 patterns.Here, the mask M shown in Figure 18 (b2) is used to exposure-processed.Be formed with " NO.1 " pattern on the mask M.In Figure 18 (b1) institute example, pattern is formed regional PA3 use the levelling AL1 of system, AL2, pattern is formed regional PA2 use the levelling AL3 of system, AL4, pattern is formed regional PA1 use the levelling AL5 of system, AL6.In this case, the levelling AL1～AL6 of system also above-mentioned to satisfy (1)～(4) formula is that purpose is configured, so 1 pattern is formed 2 levelling systems of area configurations.Here, it is identical at the width of Y direction that each pattern forms the zone.
The sensitive substrate P that Figure 18 (c1) is depicted as wide L is divided into three along Y direction one, is divided into two along X-direction, sets to amount to the occasion that 6 patterns form the zone.Here, the mask M shown in Figure 18 (c2) is used to exposure-processed.Be formed with " NO.1 " pattern and " NO.2 " pattern on the mask M.Then, each that pattern is formed regional PA1～PA6 is each suitable transfer printing of " NO.1 " pattern and " NO.2 " pattern, and on Y direction 5, on X-direction 2, forms and amounts to 10 pictures (pattern).In the example shown in Figure 18 (c1), pattern is formed regional PA3, " NO.1 " pattern and " NO.2 " pattern are formed simultaneously, use the AL1 of levelling system, AL2 this moment.Then pattern is formed regional PA2 and form " NO.1 " pattern, use the AL3 of levelling system, AL4 this moment.In addition, form on the regional PA2 when forming " NO.1 " pattern at pattern, window shade (field of illumination setting device) by being located at lamp optical system IL etc. is interdicted the illumination of the exposure light of " NO.2 " pattern, forms " NO.1 " pattern that only forms mask M on the regional PA3 at pattern.Here, interval such as above-mentioned (2) formula of levelling AL3 of system and AL4 are set, so can make these 2 the levelling AL3 of system, AL4 that pattern is formed regional PA2 configuration.Then, pattern is formed regional PA1, " NO.1 " pattern and " NO.2 " pattern are formed simultaneously, use the AL5 of levelling system, AL6 this moment.In this case, the levelling AL1～AL6 of system also above-mentioned to satisfy (1)～(4) formula is that purpose is configured, so 1 pattern is formed 2 levelling systems of area configurations.
The sensitive substrate P that Figure 18 (d1) is depicted as wide L is divided into three along Y direction one, is divided into two along X-direction, sets to amount to the occasion that 6 patterns form the zone.Here, the mask M shown in Figure 18 (d2) is used to exposure-processed.Be formed with " NO.1 " pattern, " NO.2 " pattern, " NO.3 " pattern on the mask M.Then, pattern is formed each each suitable transfer printing of regional PA1～PA6, and on Y direction 7, on X-direction 2, form and amount to 14 pictures (pattern) " NO.1 " pattern, " NO.2 " pattern, " NO.3 " pattern.In the example shown in Figure 18 (d1), pattern is formed regional PA3, " NO.2 " pattern and " NO.3 " pattern are formed simultaneously, use the AL1 of levelling system, AL2 this moment.In addition, form on the regional PA3 when forming " NO.2 ", " NO.3 " pattern, the illumination of the exposure light of " NO.1 " pattern is interdicted, form " NO.2 ", " NO.3 " pattern that only forms mask M on the regional PA3 at pattern by window shade etc. at pattern.Then, pattern is formed regional PA2, " NO.1 " pattern, " NO.2 " pattern, " NO.3 " pattern are formed simultaneously, use the AL3 of levelling system, AL4 this moment.Then, pattern is formed regional PA1, " NO.1 " pattern and " NO.2 " pattern are formed simultaneously, use the AL5 of levelling system, AL6 this moment.In addition, form on the regional PA1 when forming " NO.1 ", " NO.2 " pattern, the illumination of the exposure light of " NO.3 " pattern is interdicted by window shade etc. at pattern.In this case, the levelling AL1～AL6 of system also above-mentioned to satisfy (1)～(4) formula is that purpose is configured, so 1 pattern is formed 2 levelling systems of area configurations.
In the above-described embodiments, levelling sign M1～M6 is every formation of being decided arranged spaced on X-direction, but also can form levelling sign M31, the M41 of regional PA1 and accompany levelling sign M33, the M43 configuration side by side on Y direction that pattern forms regional PA3 accompanying pattern as shown in figure 19.Equally, also can form levelling sign M12, the M22 of regional PA2 and accompany levelling sign M14, the M24 configuration side by side on Y direction that pattern forms regional PA4 accompanying pattern, maybe will accompany pattern and form levelling sign M33, the M43 of regional PA3 and accompany levelling sign M35, the M45 configuration side by side on Y direction that pattern forms regional PA5, maybe will accompany pattern and form levelling sign M14, the M24 of regional PA4 and accompany levelling sign M16, the M26 configuration side by side on Y direction that pattern forms regional PA6.Then, 2 levelling signs of these adjacency in Y direction a plurality of levelling signs arranged side by side can be detected respectively simultaneously by 1 the levelling AL1 of system～AL4.Promptly, the AL1 of levelling system detects levelling sign M12 and M14 simultaneously at its measurement region, the AL2 of levelling system detects levelling sign M22 and M24 simultaneously at its measurement region, the AL3 of levelling system detects levelling sign M31 and M33 simultaneously at its measurement region, and the levelling AL4 of system detects levelling sign M41 and M43 simultaneously at its measurement region.Whereby, can reduce the number of times of levelling Mark Detection action, improve productive capacity.This in addition occasion also can be set to dwindle the width that pattern forms the zone.
Then, when carrying out exposure-processed, control device CONT detects each of the levelling sign of the 2nd row at first after each of the levelling sign that will begin the 1st row from-X side detects by the levelling AL1～AL4 of system by the levelling AL1～AL4 of system.Then, control device CONT one side simultaneously carries out pattern is formed the exposure-processed of regional PA1 at+directions X scanning sensitive substrate P, and then, one side simultaneously carries out pattern is formed the exposure-processed of regional PA2 at-directions X scanning sensitive substrate P.Below same, control device CONT is behind the levelling sign that detects the 3rd row and the 4th row, one side simultaneously carries out pattern is formed the exposure-processed of regional PA3 at+directions X scanning sensitive substrate P, then, one side simultaneously carries out pattern is formed the exposure-processed of regional PA4 at-directions X scanning sensitive substrate P.In addition, control device CONT is behind the levelling sign that detects the 5th row and the 6th row, one side simultaneously carries out pattern is formed the exposure-processed of regional PA5 at+directions X scanning sensitive substrate P, and then, one side simultaneously carries out pattern is formed the exposure-processed of regional PA6 at-directions X scanning sensitive substrate P.
In addition, be formed at sensitive substrate P levelling sign M1～M6 be that configuration (at interval) according to the levelling AL1～AL6 of system is set at interval, but also can the levelling default for moving in Y direction, change levelling system interval each other.
And, as described above, the pattern that will expose on sensitive substrate P forms regional PA1～PA9 and is divided into a plurality of subregion BR1～BR3, align processing and exposure-processed in the per minute district, and carry out this processing successively about each of a plurality of subregion BR1～BR3, so even sensitive substrate P maximizes, by sensitive substrate P being divided into a plurality of subregions and the laser interferometer PY1～PY3 corresponding with each subregion being set, need not 1 subregion switched laser interferometer, also can carry out precision good levelling processing and exposure-processed at each subregion.
In the present embodiment, the levelling system is totally 6 of AL1～AL6, but also can dispose 3 at least side by side in Y direction, need not to reduce the number of levelling sign whereby, just can reduce the detection action frequency of levelling sign.And, use these a plurality of levelling systems arranged side by side, simultaneously a plurality of patterns of instrumentation form each the levelling sign in zone, thereby can improve productive capacity.
As mentioned above, the interval of laser interferometer PY1～PY3 (configuration) and each the corresponding setting that forms zone (subregion) at X-direction pattern arranged side by side, when pattern form the zone each when being adjacent to each other, the configuration of laser interferometer PY1～PY3 forms the zone according to pattern and is set in the length (size) of X-direction.On the other hand, when forming the separate setting in zone at X-direction pattern arranged side by side, the configuration of a plurality of laser interferometer PY1～PY3 forms the size in zone according to pattern and interval each other is set.
In the above-described embodiments, moving lens 34b is 1 moving lens, but also can adopt on substrate objective table PST the formation of configuration and each corresponding a plurality of (3) moving lens of cutting apart of a plurality of subregion BR1～BR3 arranged side by side on X-direction.
Exposure device EX in the above-described embodiments has a plurality of projection optical systems that are adjacent to each other, so-called poly-lens scanning exposure apparatus, but be 1 scanning exposure apparatus about projection optical system, also applicable the present invention.
As the purposes of exposure device EX, be not limited on the glass plate of angle type the exposure device that the liquid crystal of exposure liquid crystal display cells pattern is used, also applicable to the exposure device of for example semiconductor manufacturing usefulness be used to make the exposure device of thin-film head.
The light source of the exposure device EX of present embodiment is not g line (436NM), h line (405NM), I line (365NM), also can use KRF exciplex laser (248NM), ARF exciplex laser (193NM), F2 laser (157NM).
The multiplying power of projection optical system PL does not just wait times system, also can be any of reduction system and expansion system.
As projection optical system PL, when using far ultraviolet such as exciplex laser, use quartzy and fluorite etc. through far ultraviolet material as glass material, when using F2 laser, be the optical system of reflected refraction system or dioptric system.
When substrate objective table PST and mask objective table MST use linear motor, can use the air come-up type that utilizes air bearing and utilize Lorentz force or any of the magnetic come-up type of reactance power.In addition, objective table both can be the type that moves along guide rail, also can be the no rail type of not establishing guide rail.
When using planar motor, the either party and the objective table of magnetite unit and armature unit can be continued, and the opposing party of magnetite unit and armature unit is located at the all-moving surface side (pedestal) of objective table as the drive unit of objective table.
The reacting force that produces by substrate objective table PST is opened as described in the flat 8-166475 communique as the spy of Japanese Patent Laid Open Publication, can use framing component mechanically to discharge to floor (the earth).The present invention is also applicable in possessing the exposure device that this structure is arranged.
The reacting force that produces by mask objective table MST is opened as described in the flat 8-330224 communique as the spy of Japanese Patent Laid Open Publication, can use framing component mechanically to discharge to floor (the earth).The present invention is also applicable in possessing the exposure device that this structure is arranged.
As mentioned above, the exposure device of the embodiment of the present application is to comprise the various subsystems of each cited inscape of the application's Patent right requirement, with keep fixed mechanical precision, electric precision, optical accuracy be purpose and assembly.In order to ensure these various precision, carry out in order to reach the adjustment of optical accuracy about various optical systems front and back in this assembling, carry out carrying out in order to reach the adjustment of electric precision about various electrical systems about various trains of mechanism in order to reach the adjustment of MECHANISM PRECISION.Packing engineering from various subsystems to exposure device comprises the continuing of the mutual machinery of various subsystems, the wiring connection of electric circuit, duct splice of air pressure circuit etc.Before packing engineering, each subsystem packing engineering is separately arranged certainly from various subsystems to exposure device., after the packing engineering end of exposure device, comprehensively adjust at various subsystems, guarantee various precision as exposure device integral body.In addition, carry out in the clean room that is manufactured on quilt management such as temperature and cleanliness of exposure device ideal.
Semiconductor element as shown in figure 20, through the step 201 of the function performance design of carrying out element, make step 202 based on the mask (reticle) of this design procedure, step 203 that the base material of making element is substrate (disk, glass plate), the exposure device by the above embodiments with the pattern exposure of reticle in substrate, and the processing substrate step 204 of the substrate video picture that will expose, element number of assembling steps (comprise and cut engineering, welding engineering, Packaging Engineering) 205, inspection step 206 etc. and manufactured.
As described above, to mask and substrate, on non-direction of scanning, dispose 3 levelling systems at least side by side at deciding scanning direction, so do not reduce the number of the levelling sign that should detect, just can reduce the detection action frequency of levelling sign.Therefore, can simultaneously keep the levelling precision and simultaneously shorten the levelling processing time, improve the productive capacity of exposure-processed.
And, the exposure area of exposing on the substrate is divided into a plurality of subregions, align processing and exposure-processed in the per minute district, and will handle about a plurality of subregions each carry out successively, so even substrate maximizes, also can need not 1 subregion switching position pick-up unit, just can carry out precision good levelling processing and exposure-processed at each subregion by substrate being divided into a plurality of subregions and the position detecting device corresponding with each subregion being set.

Claims (25)

1. exposure method, be applicable to one side with mask and substrate in the 1st direction with the pattern of moved further one side to this this mask of base plate exposure, it is characterized in that: comprising:
Detect a plurality of signs of a plurality of levelling system, wherein those levelling systems are subtend with a plurality of levelling signs of being located on this substrate respectively, dispose side by side more than 3 or 3 on the 2nd direction of intersecting with the 1st direction simultaneously; And
Based on this testing result the position of this mask and this substrate is coincide.
2. exposure method as claimed in claim 1 is characterized in that: it is the exposure area that this is exposed that the position of this substrate coincide, and carries out this detection in the position, 2 place of leaving institute's set a distance on the 1st direction or more than the position, 2 place.
3. exposure method as claimed in claim 1 or 2 is characterized in that: the exposure area of exposure of carrying out this substrate is side by side a plurality of on the 2nd direction, and the position of this substrate coincide and detects each corresponding with this a plurality of exposure areas simultaneously and align and indicate.
4. exposure method as claimed in claim 1 or 2, it is characterized in that: the exposure area of exposure of carrying out this substrate is side by side a plurality of on the 2nd direction, to the position, 2 place of the 1st direction that should the exposure area or after detecting these a plurality of levelling signs more than the position, 2 place, a plurality of exposure areas by adjacency backward each other with moved further this substrate that exposes.
5. exposure method as claimed in claim 3, it is characterized in that: the exposure area of exposure of carrying out this substrate is side by side a plurality of on the 2nd direction, to the position, 2 place of the 1st direction that should the exposure area or after detecting these a plurality of levelling signs more than the position, 2 place, a plurality of exposure areas by adjacency backward each other with moved further this substrate that exposes.
6. exposure device, be applicable to one side with mask and substrate in the 1st direction with the pattern of moved further one side to this this mask of base plate exposure, it is characterized in that:
Possess a plurality of levelling system that detects the levelling sign of being located at a plurality of positions on this substrate is arranged respectively, and
This levelling system disposes more than 3 or 3 on the 2nd direction of intersecting with the 1st direction side by side.
7. exposure device as claimed in claim 6 is characterized in that: 2 intervals, the outside of this a plurality of levelling system, with the length of the 2nd direction of this substrate about equally.
8. as claim 6 or 7 described exposure devices, it is characterized in that: 2 intervals, the outside of this a plurality of levelling system, be longer than the length of the 2nd direction of this mask.
9. as claim 6 or 7 described exposure devices, it is characterized in that: on 2 in the outside of this a plurality of levelling system, respectively in abutting connection with the AF detection system that detects with the position of the direction of the plane of exposure orthogonal of this substrate is being set.
10. exposure device as claimed in claim 8 is characterized in that: on 2 in the outside of this a plurality of levelling system, respectively in abutting connection with the AF detection system that detects with the position of the direction of the plane of exposure orthogonal of this substrate is being set.
11. as claim 6 or 7 described exposure devices, it is characterized in that: this a plurality of levelling system is configured on the 2nd direction of exposure area of the exposure of carrying out this substrate side by side, and this a plurality of levelling system is respectively to should the configuration of a plurality of exposure areas more than 2 or 2.
12. exposure device as claimed in claim 8, it is characterized in that: this a plurality of levelling system is configured on the 2nd direction of exposure area of the exposure of carrying out this substrate side by side, and this a plurality of levelling system is respectively to should the configuration of a plurality of exposure areas more than 2 or 2.
13. exposure device as claimed in claim 9, it is characterized in that: this a plurality of levelling system is configured on the 2nd direction of exposure area of the exposure of carrying out this substrate side by side, and this a plurality of levelling system is respectively to should the configuration of a plurality of exposure areas more than 2 or 2.
14. exposure device as claimed in claim 10, it is characterized in that: this a plurality of levelling system is configured on the 2nd direction of exposure area of the exposure of carrying out this substrate side by side, and this a plurality of levelling system is respectively to should the configuration of a plurality of exposure areas more than 2 or 2.
15., it is characterized in that as claim 6 or 7 described exposure devices: different with this a plurality of levelling system, possess a plurality of projection optical systems of graphic pattern projection on this substrate that have mask, and
One or more of this a plurality of levelling system are disposed at these a plurality of projection optical systems each other.
16. exposure device as claimed in claim 6 is characterized in that: the adjacent spaces of this a plurality of levelling system is 2/7 following length of the length of the 2nd direction of this substrate.
17. an exposure method is applicable to mask and substrate in the 1st direction to it is characterized in that: comprising with moved further and to the pattern of this this mask of base plate exposure:
This substrate is divided into the subregion of a plurality of exposure areas; And
After each subregions of this a plurality of exposure areas coincide this mask and this substrate position, with the pattern exposure of this mask in this substrate.
18. exposure method as claimed in claim 17 is characterized in that: it is to utilize coincide result's a part of the position of this subregion of adjacency that this position coincide.
19. exposure method as claimed in claim 17 is characterized in that: the position detecting device of the position of a plurality of these substrates of detection is set on the 1st direction, simultaneously subregion that should a plurality of exposure areas is set the configuration of these a plurality of position detecting devices.
20. exposure method as claimed in claim 19 is characterized in that: these a plurality of position detecting devices are made of a plurality of laser interferometer, and position that should substrate are detected the position of this substrate to switch the laser that uses.
21. an exposure device, be applicable to one side with mask and substrate in the 1st direction with the pattern of moved further one side to this this mask of base plate exposure, it is characterized in that comprising:
A plurality of position detecting devices are configured on the 1st direction side by side, can detect the position of this substrate in the 2nd direction of intersecting with the 1st direction;
This mask is aligned the levelling portion of this substrate; And
One control device, in these a plurality of position detecting devices of position switching control according to this substrate, 1 in these a plurality of position detecting devices is selected in corresponding exposure area of exposing on this substrate, and according to the detection position of this position detecting device, aligns exposure by this levelling portion.
22. exposure device as claimed in claim 21 is characterized in that: comprising:
Be located at the moving lens on the substrate objective table of removable this substrate of support; And
By detecting the laser interferometer of this substrate objective table to this moving lens irradiating laser in the position of the 2nd direction,
Wherein this control device switches this a plurality of laser interferometer according to moving of this substrate objective table.
23. exposure device as claimed in claim 21, it is characterized in that: this substrate is split into the subregion of a plurality of exposure areas on the 1st direction, and this control device is selected in these a plurality of position detecting devices 1 to subregion that should the exposure area, and each subregion in this exposure area switches these a plurality of position detecting devices simultaneously.
24. exposure device as claimed in claim 21 is characterized in that: the interval of these a plurality of position detecting devices is corresponding to the interval of the 1st direction of the subregion of this exposure area and set.
25. a manufacturing method is characterized in that: comprising:
Use as claim 1, claim 2, claim 17, claim 18, claim 19 or the described exposure method of claim 20 engineering that the element pattern of being described on this mask is exposed on this substrate; And
Engineering with the substrate video picture of this exposure.
CNB031367305A 2002-05-22 2003-05-20 Exposure method, exposure apparatus and element mfg. method Expired - Lifetime CN100524024C (en)

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CN103543615A (en) * 2013-10-29 2014-01-29 苏州德龙激光股份有限公司 Laser imaging processing device
WO2016045432A1 (en) * 2014-09-28 2016-03-31 上海微电子装备有限公司 Exposure device and out-of-focus and tilt error compensation method
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WO2017167258A1 (en) * 2016-03-31 2017-10-05 上海微电子装备（集团）股份有限公司 Projection exposure apparatus and method
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KR20030091055A (en) 2003-12-01
TW200307182A (en) 2003-12-01

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