CN1303649C - Exposure device, exposure method and element making method - Google Patents

Exposure device, exposure method and element making method Download PDF

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Publication number
CN1303649C
CN1303649C CNB021492751A CN02149275A CN1303649C CN 1303649 C CN1303649 C CN 1303649C CN B021492751 A CNB021492751 A CN B021492751A CN 02149275 A CN02149275 A CN 02149275A CN 1303649 C CN1303649 C CN 1303649C
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exposure
mask
pattern
position
light
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CNB021492751A
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CN1419266A (en
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白户章仁
加藤正纪
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尼康株式会社
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70058Mask illumination systems
    • G03F7/70066Size and form of the illuminated area in the mask plane, e.g. REMA

Abstract

本发明提供一种曝光装置,在分割图案继续曝光之际,能够任意设定在感光基板形成的图案的大小,同时亦能任意设定掩模上的图案的分割位置。 The present invention provides an exposure apparatus, the pattern continues in the dividing occasion of exposure, the pattern size can be arbitrarily set the photosensitive substrate is formed, at the same time can also be set arbitrarily divided position of the pattern on the mask. 其手段为使用的扫描型曝光装置,备有视野光圈,可设定感光基板P的投影区域(50)的扫描方向的宽度;及遮光板,设定感光基板P上的投影区域(50)的非扫描方向的宽度;以及遮蔽器(30),能在非扫描方向移动,可设定图案像的接合部且能使接合部累积曝光量向照射区域的周边连续地衰减。 The means for the scanning exposure apparatus used, with field stop, to set the width of the scanning direction of the photosensitive substrate P of a projection area (50); and a light shielding plate is set on a projection region of a photosensitive substrate P (50) width of the non-scanning direction; and a shutter (30), movable in the non-scanning direction, the pattern image may be set to make the joint and the joint cumulative exposure amount continuously attenuated toward the peripheral region of the irradiation.

Description

曝光装置、曝光方法以及元件制造方法 Exposure apparatus, exposure method and device manufacturing method

技术领域 FIELD

本发明为关于使掩模与感光基板同步移动,并将掩模的图案在感光基板曝光的扫描型曝光装置及曝光方法,特别是有关将感光基板上相邻的图案的一部份,重复曝光的曝光装置及曝光方法,以及元件的制造方法。 The present invention is a mask on the photosensitive substrate move synchronously, and the pattern of the mask in the scanning exposure apparatus and the exposure method of exposing a photosensitive substrate, particularly with regard to a part of the substrate adjacent the photosensitive pattern, repeated exposure the exposure apparatus and exposure methods, and device manufacturing method.

背景技术 Background technique

液晶显示元件或半导体元件,均用将掩模上形成的图案在感光基板上转写的所谓微影蚀刻(photolithography and etch)的方法制造。 A liquid crystal display element or a semiconductor element are formed with a pattern on a mask on a photosensitive substrate a so-called transfer lithography (photolithography and etch) manufacturing. 在该微影蚀刻工程使用的曝光装置,包括载置感光基板可二次元移动的基板台,以及载置有图案的掩模可做二次元移动的掩模台。 In the lithography exposure apparatus used by the project, comprising a photosensitive substrate placed on the second element may be the substrate stage, and the mask pattern is placed to do the second element to move the mask table. 一面逐次移动掩模台及基板台,一面将掩模上形成的图案经过投影光学系统转到感光基板。 Side successively moving the mask stage and substrate stage, the mask pattern formed on one surface passes through the projection optical system to a photosensitive substrate. 所谓的曝光装置,已知主要有二种类型,即将掩模上的全部图案同时转写到感光基板上的总括型曝光装置,以及一面同步扫描掩模台及基板台且一面连续的将掩模的图案转写到感光基板上的扫描型曝光装置。 The so-called exposure apparatus, there are known two types, i.e. while an entire pattern on the mask is transferred onto the blanket type exposure apparatus on the photosensitive substrate, and one surface synchronously scanning the mask stage and the substrate stage side and a continuous mask a pattern transferred onto a scanning exposure apparatus on the photosensitive substrate. 其中,制造液晶显示元件之际,因要求显示区域的大型化,所以主要采用扫描型曝光装置。 Wherein, on the occasion of manufacturing a liquid crystal display element, due to the required size of the display area, so the main scanning type exposure apparatus.

扫描型曝光装置中,将多个投影光学系统配置成,在扫描方向依所定的量位移形成相邻的投影区域,且相邻投影区域的邻接端部,在与扫描方向直交的方向重叠,有所谓多镜方式的扫描型曝光装置(mult-lens scan型曝光装置)。 A scanning type exposure apparatus, a plurality of the projection optical system is configured, the region formed by the adjacent projection a predetermined displacement amount in the scanning direction, and the abutting ends of the adjacent projection regions overlap in a direction perpendicular to the scanning direction, there a scanning type exposure apparatus (mult-lens scan type exposure apparatus) is a so-called multi-mirror manner. 多镜方式的扫描型曝光装置,不仅可维持良好的成像特性,并且不需大型化装置就可得大的曝光区域。 The multi-mirror scanning type exposure apparatus of the embodiment, not only can maintain good imaging characteristics, and size of the apparatus can be obtained without a large exposure area. 上述扫描型曝光装置的各投影光学系统的视野光圈,譬如成梯形形状,在扫描方向的视野光圈的开口宽度的合计量被设定成常相等,因为相邻投影光学系统的接合部被重复曝光,所以上述扫描型曝光装置,有投影光学系统的光学像差或曝光照度变化圆滑的优点。 Each field stop projection optical system of the scanning type exposure apparatus, for example, trapezoidal shape, is set to be normally equal to the total amount of the opening width of the field stop in the scan direction, because the adjacent engaging projection optical system are repeatedly exposed Therefore the scanning type exposure apparatus, the projection optical system has the advantages of optical aberrations or variations exposure illuminance rounded.

扫描型曝光装置,在掩模与感光基板同步移动扫描曝光后,将该些掩模与感光基板向与扫描方向直交的方向进步移动,进行多次的扫描曝光,使图案的一部份重复曝光,将该些图案接合合成,可制成有大显示区域的液晶显示元件。 A scanning type exposure apparatus, the mask and the photosensitive substrate move synchronously scanning exposure, the mask and the photosensitive substrate some progress moved in the direction perpendicular to the scanning direction, the scanning exposure for a plurality of times, so that a part of the pattern repeat exposure liquid crystal, and the engagement of these synthetic pattern, the display region can be made large display device.

重复进行扫描曝光及进步移动在感光基板上合成图案的方法,有如先在掩模形成多个分割图案,再将该些分割图案在感光基板上接合的方法;或将掩模的图案像分割为多个投影区域,将该些分割的投影区域在感光基板上接合的方法等。 The method of synthesizing a pattern of repeated and progressive scanning exposure on a photosensitive substrate moves, like the first plurality of division patterns are formed in the mask, then some method of dividing the pattern on a photosensitive substrate is bonded; or a mask pattern image is divided into a plurality of the projection area, the projection method of these divided areas on the photosensitive substrate bonding. 前面的方法如图25所示,先在掩模M形成三个分割图案Pa、Pb、Pc,再将该些各分割图案Pa、Pb、Pc在感光基板P顺次曝光,在感光基板P上接合的方法。 The previous method shown in FIG. 25, three division patterns formed first Pa, Pb, Pc in the mask M, then the more the divided patterns Pa, Pb, Pc are sequentially exposing the photosensitive substrate P, the substrate P on the photosensitive a method of joining.

另一方面,后面的方法为如图26所示每次扫描时变更对掩模M形成的图案的曝光的照射区域,在该些照射区域对应的投影区域,向感光基板P上顺次扫描曝光,再进行图案合成者。 On the other hand, the latter method of changing the irradiation region as shown in the pattern of the mask M formed by the exposure of each scan shown in FIG. 26, in the irradiation region corresponding to the plurality of projection areas on the photosensitive substrate P scanning exposure to sequentially , then the pattern composer. 此处,设五个投影光学系统,如图26(a)所示,各别的投影区域100a~100e设定成梯形,形成在扫描方向(X方向)累计曝光量保持相同,且各个的端部在Y方向重叠,在X方向的投影区域的宽度的总计相等的设计。 Here, five projection optical system provided, as shown in FIG 26 (a), the respective projected areas 100a ~ 100e is set to be a trapezoid, is formed in the scanning direction (X direction) accumulated exposure amount remains the same, and each end overlapping portions in the Y direction, the width of the projection area in the X direction is equal to the total design. 在感光基板曝光图案之际,多个投影区域100a~100e之中,将所定的投影区域对应的光路用快门遮光,使成为只在掩模M的所定区域曝光照射的情况,此时,经多次的扫描曝光,使投影区域的邻接端部重复曝光。 In the occasion of a photosensitive substrate exposure pattern, among the plurality of projection areas 100a ~ 100e, the projection area corresponding to a predetermined light path with the light-shielding shutter, so that only in the case of the mask M becomes the predetermined irradiation area of ​​the exposure, this time by the multi- scanning exposure times, the adjacent end portion of the projection area of ​​repeated exposure. 具体的说,如图26(b)所示,第一次的扫描曝光在投影区域100d的-Y侧端部a1,与第二次的扫描曝光在投影区域100b的+Y侧端部a2被重复曝光。 Specifically, FIG. 26 (b), the scanning exposure for the first time at the -Y side end a1 of the projection region 100d, and the second scanning exposure in the + Y side end portion 100b of the projection area is a2 repeated exposure. 同样地,第二次的扫描曝光在投影区100c的-Y侧端部a3,与第三次扫描曝光在投影区域100b的+Y侧端部a4被重复曝光。 Similarly, the second scanning exposure at the -Y side end portion 100c of the projection area a3 with the third scanning projection exposure region 100b of the + Y side end portion a4 are repeatedly exposed. 此时,在第一次的扫描曝光时投影区域100e被遮光;在第二次的扫描曝光时,投影区域100a、100d、100e被遮光;在第三次的扫描曝光时投影区域100a被遮光。 At this time, in the first scanning exposure projection region 100e is shielded; during the scanning exposure of the second projection area 100a, 100D, 100e is shielded; projection area 100a is shielded during the scanning exposure for the third time.

此处,第一次的扫描曝光在感光基板P上形成的分割图案在Y方向的长度L12,为投影区域100a的短边的+Y方向端点,到投影区域100d的长边的-Y方向端点之间的Y方向的距离。 Here, the first division scanning exposure pattern is formed on the photosensitive substrate P in the Y direction length L12, short side direction on the + Y end of the projection area 100a, the long side of the -Y direction end of the projection region 100d the distance between the Y direction. 第二次的扫描曝光在感光基板P上形成的分割图案在Y方向的长度L13,为投影区域100b的长边的+Y方向端点,到投影区域100c的长边的-Y方向端点之间的Y方向的距离。 Dividing the second scanning exposure pattern is formed on the photosensitive length L13 substrate P in the Y direction, the long side end on the + Y direction of the projection region 100b is, in the -Y direction between the endpoints of the projection region 100c of the long sides of a distance in the Y direction. 第三次的扫描曝光在感光基板P上形成的分割图案在Y方向的长度L14,为投影区域100b的长边的+Y方向端点,到投影区域100e的短边的-Y方向端点之间的Y方向的距离。 Dividing the third scanning exposure pattern is formed on the photosensitive length L14 substrate P in the Y direction, the long side end on the + Y direction of the projection region 100b, and between the short side of the -Y direction end of the projection region 100e a distance in the Y direction. 如此,各个分割图案的大小(Y方向的长度L12、L13、L14),为依据梯形投影区域的长边及短边来决定者。 Thus, the size of each of the division patterns (the length L12 Y direction, L13, L14), a trapezoidal projection region based on a long side and the short side to determine.

上述的公用的扫描型曝光方法及扫描型曝光装置有以下的问题。 The above-described common scanning exposure method and a scanning type exposure apparatus has the following problems.

在图25所示的方法,为在掩模M上形成多个独立的分割图案,在掩模M上的图案构成受限制。 In the method shown in FIG. 25, to form a plurality of independent division pattern on the mask M, the pattern on the mask M configured restricted. 而且为在每一分割图案扫描曝光,扫描曝光次数增加,降低生产量。 And division pattern to each scan exposure, increasing the number of scanning exposure, reduced production capacity.

又,在图26所示的方法,由多次扫描曝光进行图案合成之际,如上所述各个分割图案的大小(Y方向的长度L12、L13、L14)依据梯形投影区域的长边及短边的长短而定者。 Further, in the method shown in FIG. 26, for the occasion of the pattern synthesized by the multiple scanning exposure described above, each of the divided pattern size (length L12 Y direction, L13, L14) according to the trapezoidal projection area of ​​the long side and the short side the length and makers. 亦即,在图26所示的方法,于感光基板P上形成的图案的大小,依投影区域的大小及视野光圈的大小(形状)的限定。 That is, in the method shown in FIG. 26, the size of a pattern formed on the photosensitive substrate P, and is defined by size and the size of the projected area of ​​the field stop (shape). 而且,分割图案的接合只在梯形投影区域的端部形成,所以,图案的分割位置亦受其限定。 Further, the division pattern bonded only at the ends of the trapezoidal projection region is formed, so that the divided position of the pattern defining also affected. 如上所述,在公知的方法,图案的分割位置或感光基板P上形成的图案大小受到限制,要制作任意的组件有困难。 As described above, the size of the pattern formed on the well-known method, division position of the pattern P is restricted or photosensitive substrate, to produce any components difficult.

发明内容 SUMMARY

本发明即鉴于上述情况、目的在于提供一种曝光装置及曝光方法,以及组件制造方法,能在感光基板上将分割图案的一部份重复接合曝光之际,同时设定在感光基板形成的图案的大小,而且亦能任意设定在掩模上的图案的分割位置,可效率良好的制造组件。 The present invention, i.e., view of the foregoing, an object to provide an exposure apparatus and an exposure method, and device manufacturing method, the photosensitive substrate can be a part of the division pattern on the occasion of repeated exposure engagement, while setting the substrate in the patterning of the photosensitive size, but can also be set in the division position on the mask pattern, the components can be manufactured with good efficiency.

为解决上述的课题,本发明采用如在实施例的图1~图24所示,以下说明其构成。 To solve the above problem, the present invention employs the embodiment as shown in FIG. 1 to FIG. 24, described below its configuration.

本发明的曝光装置(EX)具以下的特征:有对掩模(M)照射光束(EL)的照明光学系统(IL),及载置掩模(M)的掩模台(MST),以及载置感光基板(P)的基板台(PST),该感光基板(P)用于通过曝光掩模(M)的图案(44、45a、45b、46、47)以制造显示组件。 Have the following characteristics exposure apparatus (EX) according to the present invention: the mask table with a mask (M) illumination beam (EL) illumination optical system (IL), and placed on the mask (M), (MST), and a photosensitive substrate placed on the substrate (P) of the stage (PST), the photosensitive substrate (P) via an exposure mask for (M) of a pattern (44,45a, 45b, 46,47) to produce a display assembly. 此种可对光束(EL)于扫描方向上同步移动掩模(M)与感光基板(P),使掩模(M)的图案影像(50a~50g、62、63)的一部份重复曝光用分成多次的扫描曝光在感光基板(P)曝光图案的曝光装置,配设视野光圈(20)以设定感光基板(P)上被照明的图案影像(50a~50g)的扫描方向(X)的宽度(Lx);及第一遮光板(40),于光路上与该视野光圈重叠,可设定图案影像(50a~50g)的与扫描方向直交的方向(Y)的宽度(Ly);以及第二遮光板(30),可在与扫描方向直交的方向(Y)移动且设定图案的重复区域(48、49、64),同时对向照射区域的周边,将在重复曝光区域(48、49、66)的累积曝光量大略连续的衰减。 Such a light beam may be (EL) synchronous movement of the mask (M) and the photosensitive substrate (P) in the scanning direction of the mask (M) of a pattern image (50a ~ 50g, 62,63) exposing a portion of the repeat into a multiple scanning exposure of the photosensitive substrate in the exposure device (P) exposure pattern, the field stop is arranged (20) to set the image pattern on a photosensitive substrate (P) to be illuminated (50a ~ 50g) in the scanning direction (X a width direction orthogonal to the scanning direction and the first light-shielding plate (40), on the optical path overlaps with the field stop, the pattern image may be set (50a ~ 50g) (Y) of the (Ly);) width (Lx) ; and a second light shielding plate (30), and can set the pattern repeat region (48,49,64) in a direction perpendicular to the scanning direction (Y) while moving the irradiation region on the periphery of the repeated exposure area (48,49,66) continuously accumulated exposure amount is slightly attenuated. 其中,该掩模台设置于该照明光学系统与该基板台之间的光路上,且该视野光圈、该遮光板以及该遮蔽器设置在对该掩模与该感光基板共轭的位置,且配置于光路上。 Wherein the mask table is provided on the optical path between the illumination optical system and the substrate stage, and the field stop, and the light-shielding plate is disposed at a position of the shielding mask and the photosensitive substrate conjugate, and disposed in the optical path.

依本发明,可用视野光圈及第一遮光板,设定在感光基板上的图案像的扫描方向及与扫描方向直交的方向的宽度,该设定的图案像在感光基板上接合之际,在光路上配置第二遮光板,可在与扫描方向直交的方向移动,由第二遮光板的移动,可任意设定光束在掩模的照射区域(照明光学系统的照射区域)。 Under this invention, it can be used and the first field stop light shielding plate, the width of a photosensitive substrate set on the pattern image scanning direction and the direction perpendicular to the scanning direction, the pattern image is set on the occasion of joining the photosensitive substrate, the optical path configuration of the second light shielding plate, movable in a direction perpendicular to the scanning direction, by the movement of the second light shielding plate, the light beam can be arbitrarily set in the area of ​​the mask irradiated (irradiation area illumination optical system). 因此,图案的接合部份,即掩模的图案的分割位置可任意设定,故可任意设定感光基板形成的图案的大小。 Thus, the engaging portion of the pattern, i.e. the position of the mask pattern is divided can be set arbitrarily, it can be arbitrarily sized pattern formed photosensitive substrate. 又,第二遮板配置成可在与扫描方向直交的方向移动,具有可沿对向照射区域的周边,在图案重复区域将累积曝光量大约连续性衰减的减光特性,故可在重复区域设定所望值的曝光量,可使重复区域与重复区域以外的曝光量一致。 Further, the second shutter is configured to be movable in a direction perpendicular to the scanning direction, having along the periphery of the irradiation region, the repeat region in the dimming characteristic pattern of the accumulated exposure amount of attenuation of about continuity, it can be repeated in the region setting an exposure amount of the desired value, can overlap area is consistent with repeated exposure amount other than the region. 因此,能进行精度良好的曝光处理。 Thus, exposure can be performed with high accuracy processing. 又,对视野光圈移动第二遮光板,可任意设定光束对感光基板的照明区域(配备投影光学系的曝光装置的场合为投影区域)的大小或形状,故继续曝光之际可提高接合精度及曝光的均一度。 In addition, movement of the second field stop light shielding plate can be arbitrarily set the illumination area of ​​the light beam on the photosensitive substrate (with the case projection optical system of an exposure apparatus is a projection region) size or shape, the exposure is continued to be increased on the occasion of joining accuracy and the exposure of uniformity.

本发明的曝光方法,为在掩模(M)照射光束(EL)的同时,对光束(EL)于扫描方向上同步移动掩模(M)与用于制造显示组件的感光基板(P),分成多次的扫描曝光,使掩模(M)的图案像(50a~50g、62、63)的一部份重复曝光,在感光基板(P)上进行图案合成的连续曝光方法。 The exposure method of the present invention, simultaneously illuminating beam (EL) in the mask (M), the light beam (EL) onto the synchronous mobile scanning direction of the mask (M) and the photosensitive substrate, manufacturing a display component (P) used, into multiple scanning exposure, the mask (M) is a part of the pattern image (50a ~ 50g, 62,63) repeated exposure method of exposing a continuous pattern is synthesized on a photosensitive substrate (P). 用视野光圈(20)设定在感光基板(P)上的被照明的图案像(50a~50g)的扫描方向(X)的宽度(Lx);将与视野光圈相异的第一遮光板(40)设置为于光路上与该视野光圈重叠,以设定图案像(50a~50g)的扫描方向的直交方向(Y)的宽度(Ly),再配合继续进行曝光的区域(48、49、64)设定第二遮光板(30),该第二遮光板(30)可向照射区域的周边连续的衰减重复区域(48、49、64)的照射光量,并能够在图案像(50a~50g、62、63)的(Y)方向移动。 A photosensitive substrate set on the width (P) with a field stop (20) is illuminated pattern image (50a ~ 50g) in the scanning direction (X), (Lx of); different from the first field stop with the visor ( 40) disposed on the optical path to overlap the field stop, to set the width of the pattern image (50a ~ 50g) in a direction perpendicular to the scanning direction (Y), (Ly), and then proceed with the exposure area (48, 49, 64) setting a second light shielding plate (30), the second light-shielding plate (30) continuously repeating the irradiation light amount attenuation region (48,49,64) to the peripheral region of the irradiation, and is capable of pattern image (50a ~ 50g, the mobile 62, 63) in the (Y) direction.

依本发明,可用视野光圈及第一遮光板设定感光基板上的图案像的扫描方向的宽度及与扫描方向直交的方向的宽度。 Under this invention, it can be used and the field stop is set a first light-shielding plate width direction of the scanning pattern image on the photosensitive substrate and the direction perpendicular to the scanning direction. 然后,该图案像在感光基板上接合之际,配合继续进行曝光的区域设定第二遮光板,就可任意设定光束对掩模的照射区域(照明光学系统的照射区域),故能够任意设定图案的连接部份,亦即掩模的图案的分割部份。 Then, the inter-engagement of the pattern image on the photosensitive substrate, with the exposed region continues to set the second light shielding plate, the light beam can be arbitrarily set the irradiation area of ​​the mask (the irradiation area of ​​the illumination optical system), it is possible to arbitrarily setting a pattern connecting portion, i.e., the divided portions of the mask pattern. 因此,可任意设定在感光基板形成的图案的大小,能够形成大的图案。 Thus, the pattern can be arbitrarily set the size of the photosensitive substrate is formed, a pattern can be formed large. 又,第二遮光板具有能够连续的衰减图案的重复区域的照射光量的减光特性,故可设定重复区域的曝光量为所期望之值。 And, a second plate having a light shielding characteristic Save irradiation light amount of the repeating region of the attenuation pattern continuously, the exposure amount may be set so that the overlapping region of the desired value. 所以,能够使重复区域与重复区域以外的各别的曝光量一致,能进行精度良好的曝光处埋。 It is possible to align respective exposure amount than the repeating region overlapping region, the exposure can be performed with high accuracy at the buried.

本发明的组件制造方法为,使用以光束(EL)照射掩模(M),同时对光束(EL)同步移动掩模(M)与玻璃基板(P)的扫描曝光型曝光装置(EX),将掩模(M)的图案的一部份接合合成,以制造此掩模(M)的连续的图案区域(46、47)更大的液晶显示元件的制造方法。 Device manufacturing method of the present invention, for use in a light beam (EL) illumination of the mask (M), while the light beam (EL) synchronous movement of the mask (M) and the glass substrate (P) of the scanning exposure type exposure apparatus (EX), a portion of the mask (M) engages synthetic pattern, a continuous pattern area (46, 47) making such a mask (M) is a method for producing the liquid crystal display device larger. 于该玻璃基板(P)上对合掩模(M)的图案的位置;于该掩模(M)的图案的接合曝光区域上对合遮光板的位置,遮蔽该掩模(M)的图案的一部份,并同步移动该掩模(M)与该玻璃基板(P),以于该玻璃基板(P)的所定区域上扫描曝光该掩模(M)的图案。 To the glass substrate (P) on the engagement position the mask (M) pattern; bonded to the exposed region of the mask pattern (M) of the engagement position of the light shielding plate, for covering the mask (M) pattern of a part of, and synchronous movement of the mask (M) and the glass substrate (P), exposing the mask (M) in a pattern to scan a predetermined region on the glass substrate (P) is. 曝光之后,使玻璃基板(P)向与扫描方向的直交方向(Y)移动,在玻璃基板(P)的该所定区域及一部份要重复的位置,设定欲与曝光的掩模(M)的图案合并照射曝光的照射区域,同时对设于照射区域的一边的接合位置的掩模(M)的图案(49),叠合接合曝光的遮光板(30)的位置并曝光。 After exposure, the glass substrate (P) moved in the direction perpendicular to the scanning direction (Y), in which a predetermined region of the glass substrate (P) and the position of a part to be repeated, and is set to be an exposure mask (M ) combined irradiation region irradiated with the exposure of a pattern, while the irradiation region provided on the mask side of the engagement position (M) of a pattern (49), a position overlapping the light shielding plate (30) engaging the exposed and exposed.

依本发明,在图案间接合曝光之际,将掩模的图案的接合位置(分割位置)的情报,做为格式预先在曝光装置设定,再配合格该格式,在接合曝光的第一次扫描曝光时,在该接合位置对合遮光板位置再曝光。 Under this invention, a pattern in indirect contact exposure occasion, the engaging position of the mask pattern (dividing position) information, in advance in the exposure apparatus as set format, which format matched qualified, joining the first exposure when the scanning exposure, the light shielding plate engaging position engaged position re-exposure. 在第一次扫描曝光之后,将玻璃基板向与扫描方向直交的方向进步移动,在第二次扫描曝光时,在接合位置叠合遮光板位置再曝光,因此,只在第一次扫描曝光时及第二次扫描曝光时分别调整遮光板的位置,就可将掩模的图案分割再于玻璃基板上接合。 When after the first scanning exposure, the glass substrate was moved in the direction of advancement perpendicular to the scanning direction, the scanning exposure in the second, at a position overlapping the light shielding plate engaged position re-exposure, therefore, only the first scanning exposure second scanning position of the second light-shielding plate were adjusted during the exposure, the mask pattern can be divided and then bonded to the glass substrate. 如上述,只要调整遮光板的位置就可设定接合的位置,故可提升接合精度,能制造具有所望性能的元件。 As described above, as long as the position of the light blocking plate can be adjusted to set the position of engagement, it can improve the accuracy of engagement, elements can be manufactured having properties look.

为让本发明的上述目的、特征和优点能更明显易懂,下文特举一较佳实施例,并配合附图,作详细说明。 In order to make the above objects, features and advantages of the present invention can be more fully understood by referring cite a preferred embodiment accompanied with figures are described in detail.

附图说明 BRIEF DESCRIPTION

图1本发明的曝光装置的一实施例的概略斜视图。 FIG exposure apparatus of the present invention is a schematic perspective view of an embodiment.

图2本发明的曝光装置的一实施例的概略构成图。 The exposure apparatus of the present invention FIG. 2 is a schematic configuration diagram of the embodiment.

图3为说明滤光器的平面图。 FIG 3 is a plan view of the filter.

图4为说明视野光圈与第一遮光板及第二遮光板的模式图。 FIG 4 is a schematic view of the first field stop and the second light-shielding plate light shielding plate is described.

图5为说明视野光圈与第一遮光板及第二遮光板的模式图。 FIG 5 is a schematic view of the first field stop and the second light-shielding plate light shielding plate is described.

图6为说明视野光圈与第一遮光板及第二遮光板的模式图。 FIG 6 is a schematic view of the first field stop and the second light-shielding plate light shielding plate is described.

图7为依第一遮光板或第二遮光板设定的投影区域的形状图。 FIG 7 is the shape of the projection region by setting the first aperture or the second light shielding plate.

图8为投影光学系统设定的投影区域图。 FIG 8 is a projection area of ​​the projection optical system settings.

图9为掩模与投影区域的关系的平面图。 9 is a plan view of the relationship between the mask and the projection area.

图10为感光基板与投影区域的关系的平面图。 FIG 10 is a plan view showing the relationship between the substrate and the photosensitive area of ​​the projection.

图11为曝光动作的序列的流程图。 11 is a flowchart of an exposure operation sequence FIG.

图12为掩模位置对合标记与第二遮光板的位置对合的状态的模式图。 FIG 12 is a position of a mask mark and the second light shielding plate bonded on the closed state of the mode in FIG.

图13为掩模幕位置对合标记与基板位置对合标记的位置对合的状态的模式图。 13 is a mask on the screen the position of the label with the substrate position engaged position mark pattern bonded state of FIG.

图14为在重复区域曝光量受控制的状态的说明图。 FIG 14 is a repeat region by the exposure control state explanatory diagram.

图15为其它实施例进行继续曝光之际的平面图。 FIG 15 a plan view of other embodiments of continued exposure occasion.

图16为其它实施例进行继续曝光之际的平面图。 Figure 16 a plan view of other embodiments of continued exposure occasion.

图17为其它实施例的第二遮光板。 The second light shielding plate 17 is another example of embodiment.

图18为其它实施例的第二遮光板。 The second light shielding plate 18 is another example of embodiment.

图19为其它实施例的第二遮光板。 The second light shielding plate 19 is another example of embodiment.

图20为其它实施例的第二遮光板。 The second light shielding plate 20 is another example of embodiment.

图21为其它实施例的第二遮光板。 A second light shielding plate 21 is another example of embodiment.

图22为设定重复区域之际的其它实施例之图。 FIG 22 is a view showing another embodiment of the set area is repeated occasion.

图23为半导体元件制工程的一例的流程图。 FIG 23 is a flowchart showing an example of the semiconductor element engineering system.

图24为感应器与计测位置的图。 FIG 24 is a diagram of the position sensor and the measured weight.

图25为公知的继续曝光方法。 FIG 25 is a well-known exposure method continues.

图26为公知的继续曝光方法。 FIG 26 is a well-known exposure method continues.

标号说明:20 视野光圈 30 遮蔽器(第二遮光板)40 遮光板(第一遮光板) 46、47 分割图案48、49 重复区域50a~50g 投影区域(照明区域) 52a~52f 重复区域(接续部)60A、60B 掩模位置对合标记 62、63 分割图案64 重复区域 72 基板位置对合标记CONT 控制装置 EL 曝光(光束)EX 曝光装置 IL 照明光学系统IMa~IMg 照明元件 M 掩模MST 掩模台Lx 图案像的扫描方向的宽度Ly 图案像的与扫描方向直交的方向的宽度 Reference numeral Description: field stop 30 shutter 20 (second light-shielding plate) 40 light shielding plate (first light-shielding plate) 48, 49, 46, 47 divided patterns 52a ~ 52f overlapping region overlapping region 50a ~ 50g projection area (illumination area) (connection unit) 60A, 60B to the position of the mask mark 64 is repeated engagement regions 62 and 63 of the division pattern 72 bonded substrate position mark CONT EL exposure control means (light beam) exposure apparatus EX IL IMa ~ IMg illumination optical system illuminating the mask MST mask member M pattern width Ly Lx die table scanning direction of the image of the pattern image scanning direction orthogonal to the direction

P 感光基板、玻璃基板 PL(Pla~PLg)投影光学系统PST 基板台 X 扫描方向Y 非扫描方向(与扫描方向直交的方向)具体实施方式以下参照图面说明本发明的曝光装置与曝光方法,以及元件的制造方法。 P photosensitive substrate described exposure apparatus and the exposure method of the present invention, a glass substrate PL (Pla ~ PLg) a projection optical system PST substrate stage X-scanning direction Y non-scanning direction (perpendicular to the scanning direction) DETAILED DESCRIPTION Referring to the drawings, and a method of manufacturing an element. 图1本发明的曝光装置的一个实施例的概略斜视图,图2为曝光装置的概略构成图。 A schematic perspective view of an embodiment of an exposure apparatus of the present invention in FIG. 1, FIG. 2 is a schematic configuration of an exposure apparatus.

图1及图2中,曝光装置EX包括载置掩模M的掩模台MST;及照明光学系统IL,可发出曝光(光束)EL照射掩模台MST上的掩模M;及基板台PST,载置感光基板P以便在掩模M形成的图案曝光;以及投影光学系统PL,将照明光学系统IL曝光照射的掩模M的图案影像,在基板台PST投影曝光。 Figures 1 and 2, the exposure apparatus EX includes a mask stage MST mask M is placed; and the illumination optical system IL, may issue the exposure (light) EL the mask M on the mask stage MST is irradiated; and the substrate stage PST , placed so as to expose the photosensitive substrate P in the pattern of the mask M is formed; and a projection optical system PL, a pattern image of the mask M is irradiated with exposure illumination optical system IL, the projection exposure for the substrate stage PST. 该照明光学系统IL有多个(本实施例为七个)照明元件IM(IMa~IMg)。 The illumination optical system IL has a plurality of (seven in this embodiment) element lighting IM (IMa ~ IMg). 投影光学系统PL也有与照明元件IM数对应的多个(本例为七个)投影光学系统PLa~PLg。 The projection optical system PL has a plurality of lighting elements and IM corresponding to the number of (seven in this example) of the projection optical system PLa ~ PLg. 投影光学系统PLa~PLg个别对应照明元件IMa~IMg配置。 The projection optical system PLa ~ PLg corresponding to individual lighting elements arranged IMa ~ IMg. 感光基板P为在玻璃板(玻璃基板)涂布感光剂而成者。 P is a photosensitive substrate (glass substrate) coated with a photosensitive agent formed by a glass plate.

该曝光装置EX,为将掩模M与感光基板P同步对曝光移动扫描曝光的扫描型曝光装置。 The exposure apparatus EX, the mask M to the substrate P from the photosensitive synchronous movement of the scanning exposure exposure scanning exposure apparatus. 在以下的说明中,设定投影光学系统PL的光轴方向为Z方向,与Z方向垂直的掩模M与感光基板P的同步移动方向(扫描方向)为X方向,与Z方向及X方向直交的方向(非扫描方向)为Y方向。 In the following description, setting the optical axis direction of projection optical system PL is a Z direction, the synchronous movement direction of the mask M and the photosensitive substrate P perpendicular to the Z direction (scanning direction) is the X direction, the Z direction and the X direction orthogonal direction (non-scanning direction) is the Y direction.

然后,如后面要详述的,曝光装置EX设有;视野光圈20,设在投影光学系统PL,用以设定在感光基板上照明的掩模M的图案像的扫描方向(X方向)的宽度;及第一遮光板40,设于投影光学系统PL中,与视野光圈20大约相同的位置,用以设定在感光基板照明的掩模M的图案像的非扫描方向(Y方向)的宽度,以及第二遮光板(blind)30,设于照明光学系统IL,可在非扫描方向(Y方向)移动。 Then, as will be described in detail, the exposure apparatus EX is provided; field stop 20, provided in the projection optical system PL, for setting a photosensitive substrate on the mask M illuminated pattern image scanning direction (X-direction) width; and a first light-shielding plate 40 is provided in the projection optical system PL, and the field stop 20 at approximately the same location for setting a photosensitive substrate on the mask M illuminated pattern image in the non-scanning direction (Y-direction) width, and a second light shielding plate (blind) 30, provided in the illumination optical system IL, may be (Y direction) in a non-scanning direction.

如图2所示,照明光学系统IL包括:光源1由超高压水银等组成;及椭圆镜1a用以聚集由光源1射出的光束;及分色镜(dichroicmirror)2,可将该椭圆镜1a收聚的光束之中,必要波长的光束反射,其它波长的光束则直接透过;及波长选择滤光器3,在分色镜2反射的光束中,只让曝光更必要的波长(通常为g、h、i线之中的至少一个波段)通过;以及光导向设备4,将波长选择滤光器3通过的光束,分岐为多支(本实施例为7支),经反射镜5射入各照明元件IMa~IMg。 The illumination optical system IL shown in Figure 2 comprising: a light source 1 composed of an ultrahigh pressure mercury; elliptical mirror 1a and the light emitted from the light source to gather light flux; and a dichroic mirror (dichroicmirror) 2, may be the elliptical mirror 1a among gather light beams of necessary wavelengths reflected light beam directly transmitted through other wavelengths; 3 and a wavelength selective filter, the light beam reflected by the dichroic mirror 2, only a wavelength of the exposing more necessary (usually g, h, among the at least one band of the i-line) through; and a light guide 4, the wavelength selection filter 3 through the beam, the multi-branched bifurcation (seven in this embodiment), emitted by the mirror 5 into each illumination element IMa ~ IMg.

照明元件IM配置有多个(本实施中有IMa~IMg七个)(但图2为方便计,只显示照明元件IMg对应部份),照明光学系IMa~IMg各别在X方向与Y方向保持一定间隔的布置。 IM lighting element are arranged a plurality of (in the present embodiment there are seven IMa ~ IMg) (FIG. 2, but for convenience, only part of the corresponding lighting element IMg), an illumination optical system IMa ~ IMg respective X and Y directions in arranged to maintain a certain interval. 该些多个照明元件IMa~IMg个别射出的曝光EL,个别照明掩模M上不同的小区域(照明光学系统的照射区域)。 The plurality of illumination elements of these individual emitted IMa ~ IMg exposure EL, individual lighting on the mask M different small region (irradiation region of the illumination optical system).

照明元件IMa~IMg各个备有,照明快门6,及中继透镜(relaylens)7,飞眼透镜8当做光学积分器,以及聚光镜9。 Each lighting element with IMa ~ IMg illumination shutter 6, and the relay lens (relaylens) 7, 8 fly-eye lens as an optical integrator and a condenser lens 9. 当照明快门6遮断光路时,即遮断该光路的光束;打开光路时,即解除该光束的遮光。 6 when the shutter blocking the illumination light path, i.e. interrupt the light beam of the light path; open light path, i.e., releasing the light-shielding of the beam. 在照明快门6,连接快门驱动部6a驱动该照明快门6对光束的光路进退移动。 In the illumination shutter 6, 6a connected to the shutter driving unit 6 drives the shutter illumination optical path of the light beam is moved forward and backward. 快门驱动部6a由控制装置CONT控制。 6a shutter driving unit controlled by the control unit CONT.

又,各个照明元件IMa~IMg各别设有光量调整机构10。 Further, the individual lighting elements IMa ~ IMg respective light amount adjusting means 10 is provided. 该光量调整机构10为设定每一光路的光束的照度而调整各光路的曝光量的设备,配置有半透明镜11、及检波器12、及滤光器13、以及滤光器驱动部14。 13, and the filter drive section 14 of the light amount adjusting means 10 to adjust the amount of each exposure apparatus is the illumination optical path is set for each optical path of the light beam, is arranged a semi-transparent mirror 11 and the detector 12, and the filter . 半透明镜11配置在滤光器13与中继透镜7之间的光路中,将透过滤光器13的光束的一部份射入检波器12。 Semi-transparent mirror 11 disposed on the optical path between the filter 713 and a relay lens, a part of the incident light beam detector 13 is transmitted through the optical filter 12. 各个检波器12经常独立检测入射光束的照度,并将检测的照度信号输出到控制装置CONT。 Are often each independently detector 12 detects the illuminance of the incident light beam, and outputs the detected signal to the illumination unit CONT.

如图3所示,滤光器13为在玻璃板13A上用铬(Cr)等涂成帘子状图形而成者,其透过率沿Y方向在某范围内逐渐变化线形而形成。 3, the filter 13 is chromium (Cr), etc. painted in the curtain-like pattern are formed on a glass plate. 13A, which is formed gradually changes the transmittance of the Y direction linear within a certain range. 该滤光器13配置在各光路中的照明快门6与半透明镜11之间。 Between the semitransparent mirror 11 of the filter 13 disposed in the illumination light path and the shutter 6.

在多个的每一个光路,各配设有半透明镜11,检波器12及滤光器13。 In each of a plurality of optical paths, each provided with a semi-transparent mirror 11, the detector 12 and filter 13. 滤光器驱动部14,依控制装置CONT的指示沿Y方向移动滤光器13。 Filter drive section 14, filter 13 moves in the Y direction indicated by the control unit CONT. 如此,用滤光器驱动部14移动滤光器13,可调整每一光路个别的光量。 Thus, 13, each of the optical path to adjust the light quantity of individual filter drive unit 14 moves the optical filter.

透过光路调整机构10的光束,再经过中继透镜7到达飞眼透镜8。 Light beam transmitted through the optical path adjusting means 10, and then through a relay lens 7 reaches the fly-eye lens 8. 飞眼透镜8在射出面形成二次光源,经过聚光镜9就可以均一的照度照射掩模M的照射区域。 Fly-eye lens 8 is formed on the exit surface of the secondary light source, through the condenser lens 9 can be irradiated with a uniform illuminance of the irradiation area of ​​the mask M. 然后,通过聚光镜9的曝光EL,在通过照明元件中包括直角棱镜16及透镜系统以及凹面透镜的反射屈折型光学系统15后,照明掩模M的所定的照明区域。 Then, exposure by the condensing lens EL 9, comprising after 16 and 15, a predetermined illumination area mask M rectangular prism refractive lens system, and a reflection type optical system by a concave lens lighting element. 掩模M即依照透过照明元件IMa~IMg的各曝光EL照明不同的各照射区域。 I.e., the mask M is illuminated through the irradiation area in accordance with the respective elements IMa ~ IMg EL lighting each different exposure. 此处,在聚光镜9与反射屈折型光学系统15之间,配置有第二遮光板30(Blind遮蔽器),该第二遮光板30可由遮光板驱动部31驱动在非扫描方向(Y方向)移动。 Here, between the condenser lens 9 and the reflective refractive optical system 15, a second light shielding plate 30 is disposed (Blind shutter), 30 may be non-scanning direction (Y direction) of the light shielding plate 31 of the second driving unit driving the light shielding plate mobile. 关于遮蔽器B将在后面说明。 About B shutter will be described later.

支持掩模M的掩模台MST,有进行一次元的扫描曝光的X方向的长行程,及与扫描方向直交的到Y方向的所定距离的行程。 Mask stage supports the mask M in the MST, there is a long-stroke X-direction, scanning exposure of the element, and the direction perpendicular to the scanning direction Y by a given stroke distance. 如图2所示,掩模台MST具有可将该掩模台MST向XY方向移动的掩模台驱动部MSTD。 As shown in FIG. 2, the mask stage MST has a mask stage-driving unit MSTD the mask stage MST may be moved in the XY directions. 掩模台驱动部MSTD由控制装置CONT控制。 The mask stage driving unit MSTD is controlled by the control unit CONT.

如图1所示,在掩模台MST上的X方向及Y方向各别的边端,各设置垂直方向的移动镜32a、32b。 1, the respective side ends of the X direction and the Y direction on the mask stage MST, each disposed in a vertically movable mirror 32a, 32b. 在移动镜32a设有对向的激光干涉计33a,移动镜32b有激光干涉计33b对向配置。 Moving mirror 32a is provided in the laser interferometer 33a, 32b has a movable mirror 33b of the laser interferometer configuration. 该些激光干涉计33a、33b各对其对向的移动镜32a、32b射出激光测计其与移动镜32a、32b间的距离,依此可高精度检测掩模台MST的X向及Y方向的位置,亦即掩模的位置。 The plurality of laser interferometers 33a, 33b facing their respective movable mirror 32a, 32b which emits laser altimeter movable mirror 32a, the distance between 32b, so the mask stage MST can be detected with high accuracy of the X and Y directions position, i.e. the position of the mask. 激光干涉计33a、33b的检测结果,输出至控制装置CONT。 A laser interferometer 33a, 33b of the detection result output to the control unit CONT. 控制装置CONT由激光干涉计33a、33b的输出监控掩模台MST的位置,控制掩模台驱动部MSTD,移动掩模台MST至所望的位置。 The control unit CONT by the laser interferometer 33a, 33b outputs a position to monitor the mask stage MST, controls the mask stage drive unit The MSTD, moving the mask stage MST to the desired position.

透过掩模M的曝光EL,各别射入投影光学系统PL(PLa~PLg)。 EL exposure through the mask M, the projection optical system is incident on the respective PL (PLa ~ PLg). 该投影光学系统PLa~PLg乃为将掩模M的照射范围内存在的图案在感光基板P成像,在感光基板P的特定区域投影曝光图案像的设备,与各照明元件IMa~IMg对应配置。 The projection optical system PLa ~ PLg is for the irradiation area of ​​the mask M in the memory of the image pattern on the photosensitive substrate P, the exposure pattern in a specific region of the projection image of the photosensitive device substrate P, correspond to the respective lighting elements IMa ~ IMg configuration.

如图1所示,多个投影光学系统PLa~PLg之中,投影光学系Pla、PLc、PLg与投影光学系PLb、PLd;PLf成二列多鸟状排列。 As shown in FIG. 1, a plurality of the projection optical system among PLa ~ PLg, the projection optical system Pla, PLc, PLg projection optical system PLb, PLd; PLf into more than two birds are arranged. 即成多鸟状配置的各投影光学系统PLa~PLg的紧邻投影光学系(例如PLa与PLb、PLb与PLc)在X方向成定量变位的配置。 Each projection optical system is arranged in several birds Serve immediately PLa ~ PLg projection optical system (e.g. PLa and PLb, PLb and PLc) arranged in the X-direction displacement of quantification. 该些各投影光学系PLa~PLg,使由照明元件IMa~IMg射出透过掩模M的多个曝光通过,再于基板台PST载置的感光基板P投影掩模M的图案像。 Each of the plurality of projection optical system PLa ~ PLg, so that light emitted by the illumination element IMa ~ IMg through a plurality of mask M by the exposure, the photosensitive substrate is then placed on the substrate stage PST of the mask M P projected pattern image. 亦即通过各投影光学系PLa~PLg的曝光EL,在感光基板P上的不同投影区域(照明区域),将掩模M的照射区域对应的图案像依所定的成像特性成像。 I.e. exposure of each projection optical system EL PLa ~ PLg, except the projection area (illumination area) on the photosensitive substrate P, the pattern of the mask M illuminated region corresponding to the image by a predetermined image forming characteristic.

如图2所示,各个投影光学系统PLa~PLg,各设有像移动机构19,及两组的反射屈折型光学系统21、22,及视野光圈20,以及倍率调整机构23。 2, each of the projection optical system PLa ~ PLg, each with 20, and the image magnification adjustment mechanism moving mechanism 19, and a reflective refractive optical systems two groups 21, 22 and the field stop 23. 像移动机构19,为如用两片平行的平面玻璃板分别在Y轴或X轴周围回转,将掩模M的图案像往X方向或Y方向移动。 Like the moving mechanism 19, the pattern image of mask M, respectively, as the rotary movement of the Y-axis around X-axis or two parallel plane glass plate to X or Y direction. 透过掩模M的曝光EL通过过像移动机构19之后,射入第一组的反射屈折型光学系统21。 EL exposure through the mask M by the moving means after the image through 19, is incident on the reflective refractive optical systems of the first group 21.

反射屈折型光学系统21乃为形成掩模M的图案的中间像的设备,包括有直角棱镜24、透镜系统25及凹面透镜26。 The reflective refractive optical system 21 is for the formation of the intermediate pattern of mask M, comprising right-angle prism 24, a lens 25 and a concave lens system 26. 直角棱镜24可在Z轴周围自由回转,能够旋转掩模M的图案像。 Right-angle prism 24 is rotatably around the Z-axis, rotatably M of the mask pattern image.

在该中间像的位置,设有视野光圈20。 In the position of the intermediate image, the field stop 20 is provided. 视野光圈20为设定在感光基板P上的投影区域的设备,特别是设定在感光基板P上的图案像的扫描方向(X方向)的宽度。 Field stop 20 for the device is set on a projection region of a photosensitive substrate P, the width of the scanning direction of the particular set on the photosensitive substrate P pattern image (X-direction). 通过视野光圈20的光束,射入第二组的反射屈折型光学系统22。 A field stop 20 by a light beam incident on the reflective refractive optical system 22 of the second group. 反射屈折型光学系统22与反射屈折型光学系统21同样地,具备直角棱镜27、透镜系统28及凹面透镜29。 The reflective refractive optical system 22 and the reflective refractive optical system 21 in the same manner, with right-angle prism 27, a lens 28 and a concave lens system 29. 直角棱镜27亦可自由绕Z轴回转,可以回转掩模M的图案像。 Right-angle prism 27 can freely swing about the Z axis can swing pattern image of the mask M.

由反射凹折型光学系统22射出的曝光EL,通过倍率调整机构23,在感光基板P上结成掩模M的图案像的等倍正像。 Recesses by the reflection type optical system 22 is emitted from the EL exposure, by the magnification adjustment mechanism 23, to form a pattern image of the mask M times just like on the photosensitive substrate P. 倍率调整机构23为由平凸透镜、双凸透镜及平凸透镜的三片透镜构成。 Magnification adjustment mechanism 23 by plano-convex lens, lenticular lens and three plano-convex configuration. 往Z方向移动位于两片平凸透镜之间的双凸透镜,就可变化掩模M的图案像的倍率。 Z direction toward the lenticular lens is located between two plano-convex lens, can change the magnification of the pattern image of mask M.

在支持感光基板P的基板台PST有基板架PH,经该基板架PH载置感光基板P。 Supporting the substrate P in the photosensitive substrate stage PST has a substrate holder PH, the substrate holder PH by placing a photosensitive substrate P. 基板台PST与掩模台MST同样地,有进行一次元扫描曝元的X方向的长行程(stroke),及与扫描方向直交的Y方向的逐步移动用的长行程,以及将该基板台PST向XY方向移动的基板台驱动部PSTD。 A substrate stage PST and the mask stage MST in the same manner, there are one-dimensional scan performed long stroke (Stroke) exposed element in the X direction and Y direction by stepwise movement perpendicular to the scanning direction of the long stroke, and the substrate stage PST moving in the XY direction of the substrate stage-driving unit PSTD. 基板台驱动部PSTD由控制装置CONT控制。 The substrate stage driving unit PSTD is controlled by the control unit CONT. 尚有,基板台PST亦能够向Z方向移动。 Still, the substrate stage PST is also movable in the Z direction.

又,基板台PST设有检测掩模M的图案面与感光基板的曝光面的Z方向位置的检测装置(未图标),可控制掩模M的图案面与感光基板P的曝光面,常在所定的间隔的位置。 Further, the substrate stage PST is provided with the Z-direction position detecting means of the exposure pattern surface and the surface of the photosensitive substrate detection mask M (not shown), may control the exposure mask M and the photosensitive surface of the pattern surface of the substrate P, often predetermined spaced locations. 该检测装置由斜入射方式的焦点检测系统的一种的多点焦点位置检出系统构成,该检测值,即感光基板P的Z方向的位置情报,输出至控制装置CONT。 The detecting device of one embodiment of oblique incidence focus detection system multipoint focal position detecting system, the detection value, unit CONT position information in the Z direction, i.e., a photosensitive substrate P, to the control output.

如图1所示,在基板台PST上的X方向及Y方向各别的边端的直交方向各设有移动镜34a、34b。 As shown in FIG 1, X and Y directions on the substrate stage PST in respective directions perpendicular to the respective side end is provided with a movable mirror 34a, 34b. 在移动镜34a有激光干涉计35a对向配置。 Laser interferometer 35a to the configuration of the movable mirror 34a. 在移动镜34b有激光干涉计35b对向配置。 35b of the laser interferometer arranged to move the mirror 34b. 该些激光干涉计35a、35b分别向其对向的移动镜34a、34b射出激光,测计其与移动镜34a、34b射出激光,测计其与移动镜34a、34b之间的距离。 The plurality of laser interferometers 35a, 35b, respectively, to move to its mirror 34a, 34b emits a laser altimeter which the movable mirror 34a, 34b emits a laser beam, which is the distance between the altimeter and the movable mirror 34a, 34b. 如此,可高分辨率,高精度地检测基板台PST的X方向及Y方向的位置,亦即感光基板P的位置。 Thus, the high resolution and accuracy to detect the position of the X and Y directions of the substrate stage PST, i.e., the position of the photosensitive substrate P. 激光干涉计的检测结果,输出到控制装置CONT。 Laser interferometer meter detection result is outputted to the control unit CONT. 控制装置CONT利用激光干涉计35a、35b及前述检测装置(多点焦点位置检测系统)的输出,监视基板台PST的位置,控制基板台驱动部PSTD,使基板台PST移动至所望的位置。 The control unit CONT by using a laser interferometer 35a, 35b and the detection device (multipoint focal position detecting system) is output, monitor the substrate stage PST position, controls the substrate stage driving unit the PSTD, the substrate stage PST is moved to the position desired.

掩模台驱动部MSTD及基板台驱动PSTD,由控制装置CONT分别独立控制,掩模台MST及基板台PST本来就由掩模台驱动部MSTD与基板台驱动部PSTD各别驱动,可个别独立移动。 And the mask stage-driving unit MSTD substrate stage drive PSTD, are independently controlled by the controller CONT, the mask stage MST and the substrate stage PST is driven by a respective already mask stage-driving unit MSTD and the substrate stage-driving unit PSTD, may be separate and independent mobile. 所以,控制装置CONT可以一面监视掩模台MST与基板台OST的位置,一面控制两个驱动部PSTD及MSTD,使掩模M与感光基板P对投影光学系统PL,以住意的扫描速度(同步移动速度)向X方向同步移动。 Therefore, one side of the control unit CONT can monitor the mask stage MST and the substrate stage the position of the OST, the control side and two driving unit PSTD The MSTD, the mask M and the substrate P on the photosensitive projection optical system PL, scanning speed is intended to live ( synchronous mobile speed) move synchronously in the X direction.

此处,在掩模台MST支持的掩模M,与基板台PST支持的感光基板P,透过投影光学系统PL配置成共轭的位置关系。 Here, in the mask stage MST supports the mask M, a substrate stage PST supports the photosensitive substrate P, and via the projection optical system PL is configured to conjugate positional relationship.

其次,参照图4及图5说明视野光圈20,遮光板(第一遮光板)40及遮蔽器(第二遮光板)30。 Next, referring to FIG. 4 and FIG. 5 illustrates a field stop 20, the light-shielding plate (first light-shielding plate) 40 and a shutter (second light-shielding plate) 30. 图4及图5为表示视野光圈20,遮光板40、遮蔽器30的个别与投影光学系统PL、掩模M、感光基板P的位置关系的模型图。 4 and FIG. 5 is a diagram 40, the individual shutter projection optical system PL, the mask M, showing the positional relationship of photosensitive model substrate P field stop 20, the light shielding plate 30.

在图4中,以投影光学系统PLg代表显示,视野光圈20配置在投影光学系统PL(PLg),有缝隙状的开口。 In FIG. 4, representative of the projection optical system PLg display, field stop 20 is disposed in the projection optical system PL (PLg), a slit-shaped opening. 该视野光圈20为设定感光基板P上的投影区域(照明区域)50(50g)的形状的设备,特别是设定图案像的投影区域50的扫描方向(X方向)的宽度Lx。 The field stop 20 is set to the projection area (illumination area) 50 (50g) on ​​the photosensitive substrate P shaped device, the scanning direction (X direction), in particular the setting of the pattern image projected region 50 of width Lx. 视野光圈20配置于投影光学系统PL之内,对掩模M及感光基板P成大约共轭的位置关系。 Field stop 20 is disposed within the projection optical system PL, the position relationship between the mask M and the substrate P at approximately photosensitive conjugate.

遮光板(第一遮光板)40亦为设定在感光基板P上的投影区域的形状的设备,特别是为设定图案像的投影区域50的非扫描方向(Y方向)的宽度Ly。 A light shielding plate (first light-shielding plate) 40 is also set on the photosensitive substrate P shaped projection area of ​​the device, especially for a non-scanning direction (Y direction) is set as a pattern projection region 50 a width Ly. 遮光板40亦设于投影光学系统PLg,配置成与视野光圈重叠,由视野光圈20与遮光板40形成的开口K,设定感光基板P上的投影区域50g的大小及形状。 The light shielding plate 40 is also provided in the projection optical system PLg, arranged to overlap with the field stop, an opening K is formed by the field stop 20 and the light shielding plate 40, set size and shape of the projection 50g of the region on the photosensitive substrate P. 在本实施例中,视野光圈20与遮光板40形成的投影区域50g为平面梯形形状。 In the present embodiment, the projection area 20 and the field stop 50g light shielding plate 40 is formed of a planar trapezoidal shape. 此处,与视野光圈20重叠配置的遮光板40,亦在在投影光学系统PL之内,对掩模M及感光基板P成大略共轭的位置关系。 Here, the field stop 20 is arranged to overlap the light shielding plate 40, also in in the projection optical system PL, the mask M and the substrate P to the photosensitive roughly conjugate positional relationship.

又,对遮光板40相对的移动感光基板P也可以,所以遮光板40为固定的或可移动皆可以,为保持更大的自由度,如图4、图5所示的移动也可以。 Further, the light shielding plate 40 opposed to the photosensitive substrate P may be moved, the movable light shielding plate 40 is stationary or both may be movable, in order to maintain a greater degree of freedom, as shown in FIG 4, FIG 5 may be.

在遮光板40设有遮光板驱动机构(未图标),遮光板40在遮光板驱动机构的驱动下,可往非扫描方向(Y方向)移动。 In the light shielding plate 40 is provided with the light shielding plate drive mechanism (not shown), the light shielding plate 40 is driven by the drive mechanism, it may be (Y direction) of the light shielding plate moves towards the non-scanning direction. 所以,把遮光板40往Y方向移动,可任意设定投影区域50g的Y方向的宽度Ly,如此,可任意设定投影区域50a~50g合并后的大小。 Therefore, the light blocking plate 40 in the Y direction can be arbitrarily set the width Ly 50g projection region in the Y direction, thus, can be arbitrarily set the size of the projection area 50a ~ 50g were combined. 此处,在投影光学系统PLg设置的遮光板40,可以独立移动,各遮光板40的Y方向的位置可个别设定,所以能够设定投影区域50的大小与形状。 Here, the projection optical system provided PLg light shielding plate 40 can move independently, the light blocking position in the Y direction of each plate 40 may be set individually, it is possible to set the size and shape of the projection region 50.

又,对投影区域50a~50g设置大的遮光板两张当做遮光板40亦可,例如图2图的标号30F所示的形状也可以。 Furthermore, a large set of two shielding plate 50a ~ 50g projection region as the light shielding plate 40 may, for example, the shape shown in FIG. 2 reference numerals in FIG. 30F may be. 遮光板40的位置设在感光基板P或掩模M或遮蔽器30的近傍亦可。 The position of the light blocking plate 40 is provided on the photosensitive substrate or the mask M or P shutter 30 may vicinity.

遮蔽器(第二遮光板)30为如图2等所示,配置于照明光学系统IL(照明元件IM),由遮蔽器驱动部31驱动可在非扫描方向(Y方向)移动。 Shutter (second light-shielding plate) 30 as shown in FIG. 2 and the like, disposed in the illumination optical system IL (the IM lighting element), is driven by a shutter driving unit 31 is movable in the non-scanning direction (Y direction). 遮蔽器驱动部31的驱动由控制装置CONT控制,遮蔽器30依控制装置CONT的控制移动。 Shutter drive section 31 is driven by the control unit CONT, shutter 30 by controlling the movement control unit CONT. 在本实施例,遮蔽器30如图1所示,包括:遮蔽器A,设在对应照明元件IMa及投影光学系统Pla的光路近接的位置,以及遮蔽器B,设在照明元件IMg与投影光学系统PLg对应的光路的近接位置。 In this embodiment, the shield 30 is shown in Figure 1, comprising: a shutter A, provided on the optical path of the corresponding lighting element IMa and a projection optical system Pla proximity position, and a shutter B, provided in the illumination element IMg projection optical PLg system light path corresponding to the position of proximity. 所以,遮蔽器30如图5所示,往Y方向移动可遮住视野光圈20与遮光板40所形成的开口K的一部份(图5中为方便认识只示开口K,未图标视野光圈20及遮光板40),以任意设定投影区域50的大小及形状。 Therefore, the shield 30 is shown in Figure 5, the Y-direction movable to cover a part of the field stop 20 and the opening K is formed in the light shielding plate 40 (FIG. 5 for convenience shown only recognize the opening K, the field stop (not shown) 20 and the light shielding plate 40) to arbitrarily set the size and shape of the projection region 50.

遮蔽器30的前端部(相当开口K的部份)的X方向的宽度向Y方向逐渐缩小,形成斜向的斜形遮蔽器。 The width of the front end portion of the shutter 30 (corresponding to the opening part K) in the X direction gradually decreases in the Y direction to form an oblique ramp-shaped shutter. 用其斜形部份遮蔽曝光EL,可设定投影区域50的形状。 Which is partially shaded by oblique exposure EL, the shape of the projection area 50 may be set. 本实施例中,视野光圈20与遮光板40及遮蔽器30形成的投影区域(照明区域)50,被设定成梯形形状(平形四边形形状)。 In this embodiment, the projection area (illumination area) 20 and the field stop 40 and the light shielding plate 30 formed by the shield 50, is set to a trapezoidal shape (parallelogram shape).

遮蔽器30配置于照明光学系统IL之内,对掩模M与感光基板P大略共轭的关系位置。 Shield 30 is disposed within the illumination optical system IL, the relationship between the position of the mask M and the substrate P roughly photosensitive conjugated. 即,本实施例中,视野光圈20、遮光板40及遮蔽器30配置在对掩模M与感光基板P的大略共轭的关系位置,而该掩模M与感光基板P又透过投影光学系统PL成共轭的关系位置的配置。 That is, in this embodiment, the field stop 20, the light shielding plate 40 and the shutter 30 disposed at the position relationship between the mask M and the substrate P is roughly the photosensitive conjugate, while the mask M and the photosensitive substrate P via the projection optical and system PL arranged into the relationship between the position of the conjugate.

此处,视野光圈20与遮光板40及遮蔽器30,只要配置在对掩模M与感光基板P共轭的相关位置就可以。 Here, the field stop 20 and the light shielding plate 40 and the shutter 30, arranged at the relevant location as long as the mask M and the photosensitive substrate P can be conjugated. 因此,例如图6所示,将遮光板(第一遮光板)40接近遮蔽器B设置也可以。 Thus, for example, as shown in FIG. 6, the light shielding plate (first light-shielding plate) 40 is provided near the shutter may B. 或将遮蔽器30配置在投影光学系统内视野光圈20的近傍也可以。 Or the shutter 30 is disposed in the projection optical system field stop 20 may be vicinity. 或将该些各元件20、30、40在掩模M或2感光基板P的近接位置配置也可以。 The or each of these elements 20, 30 arranged in the proximity position the mask M or P 2 may be a photosensitive substrate. 亦即,视野光圈20,遮光板40、遮蔽器30各别,只要在对掩模M与感光基板P共轭的位置(参考图2的A、B标号),配置于曝光EL的光路上的任可位置都可以。 I.e., field stop 20, the light shielding plate 40, respective shutter 30, as long as the position of the mask M and the substrate P photosensitive conjugated (see FIG. A 2 A, B numeral) disposed in the optical path of the exposure EL It may be any position. 又,遮光器30配置在对共轭面散焦的位置,其光量和仍然为一定,所以配置在聚焦方向稍偏离的位置也无妨。 Further, the shutter 30 is arranged at a position conjugate plane defocus amount and the light remains constant, it is disposed at a position slightly deviated in the focusing direction anyway.

又,遮光板40虽可利用Y方向的移动设定投影区域50的Y方向的宽度Ly,因设计成可绕Z轴回转,将遮光板40绕Z轴回转,就如图7所示,能够变更投影区域50的形状。 Further, although 40 Y-direction movement can be used to set the projection area 50 in the Y direction of the width Ly of the light shielding plate, designed to be due to rotation about the Z axis, the light shielding plate 40 around the Z-axis rotation, it is shown in Figure 7, can be changing the shape of the projection region 50. 同样地,沿Z轴回转遮蔽器30,亦可改变投影区域50的形状。 Similarly, the Z-axis rotary shutter 30, may change the shape of the projection region 50.

图8为投影光学系统Pla~PLg在感光基板P上的投影区域50a~50g的平面图。 8 is a plan view of the projection optical system Pla ~ PLg projection region on the photosensitive substrate P in 50a ~ 50g. 各投影区域50a~50g依视野光圈20及遮光板40设定成所定的形状(本例为梯形)。 Each projection region 50a ~ 50g is set by a field stop 20 and the light blocking plate 40 into a predetermined shape (in this case trapezoidal). 投影区域50a、50c、50e、50g与投影区域50b、50d、50f在X方向相对向配置。 Projection region 50a, 50c, 50e, 50g and the projection regions 50b, 50d, 50f disposed in opposite to the X direction. 而且,在投影区域50a~50g的邻接的投影区域的端部(边界部)间(51a与51b、51c与51d、51e与51f、51g与51h、51i与51j、51k与51l)用二点锁线所示的,在Y方向重叠并列配置,形成重复区域(接合部)52a~52f。 Further, between the end portion (boundary portion) adjacent projection region 50a ~ 50g of the projection area (51a and 51b, 51c and 51d, 51e and 51f, 51g and 51h, 51i and 51j, 51k and 51L) lock with two points shown by line, arranged in parallel in the Y direction to overlap, form a repeating region (joint portion) 52a ~ 52f. 因投影区域50a~50g的边界部间在Y方向重叠的并列配置,投影区域的X方向的宽度总计被设定成大略相等,如此可使在X方向扫描曝光时的曝光量相等。 Because the boundary portion between the projection regions 50a ~ 50g overlap in the Y direction are arranged in parallel, the width direction X of the total area of ​​the projection is set to be roughly equal, thus equalizing the amount of exposure during the scanning exposure in the X direction.

如上所述,设置各投影光学系统Pla~PLg的投影区域50a~50g的各别的重复区域(接合部)52a~52f,能够缓和在接合部52a~52f的光学像差的变化或照度变化。 As described above, each of the projection area is provided the projection optical system of the Pla ~ PLg respective overlapping region 50a ~ 50g (the engaging portion) 52a ~ 52f, a change can be mitigated or illumination change at the joint of optical aberrations of 52a ~ 52f. 此处,接合部52a~52f的Y方向的位置或宽度,可移动遮光板40任意设定。 Here the position or the width, Y the direction of the joint 52a ~ 52f, the movable light shielding plate 40 set arbitrarily.

又如图8的虚线所示,两组遮蔽器30之中,一方的遮蔽器30A在±Y方向移动设定对掩模M的照射区域的方式,设定+Y侧的投影区域50a的大小、形状;另一方的遮蔽器30B,亦在±Y方向移动设定对掩模M的照射区域,以设定-Y侧的投影区域50g的大小、形状。 Another example is shown in dotted line in FIG. 8, among the two shutter 30, one of the shutter 30A is set in the ± Y direction on the way of the irradiation area of ​​the mask M, the projection region 50a to set the size of the + Y side shape; the other shutter 30B, also in the ± Y direction is set to the mask M illuminated region, to set the projection region 50g of the -Y side of the size, shape. 尚且,一方的遮蔽器30A尚能够遮蔽对应投影区域50a的光路,同时设定投影区域50c的大小及形状;另一方的遮蔽器30B,在遮蔽投影区域50g对应光路的同时,亦可设定投影区域50e的大小及形状。 Yet, one of the shutter 30A is still possible to shield the light path corresponding to the projection region 50a, while setting the size and shape of the projection 50c of the region; the other shutter. 30B, while masking the projection area corresponding to the optical path 50g, the projection can also be set size and shape of the area 50e. 如此,遮蔽器30A、30B的个别在Y方向移动可遮住多个投影区域之中,特定的投影区域对应的光路,能够任意设定所定投影区域的大小及形状。 Thus, shutter. 30A, the individual light path in the Y-direction movable among a plurality of projection regions covered, corresponding to a specific region of the projection 30B can be arbitrarily set to a predetermined size and shape of the projection area.

又,遮蔽器30的移动,可设定投影区域的边界部51a、51d、51e、51h、51i、51l各别的大小。 Also, movement of the mask 30, the projection portion 51a may be set boundary region, 51d, 51e, 51h, 51i, 51l respective size. 因此,遮蔽器30利用在非扫描方向(Y方向)移动设定投影区域的边界部的大小与形状,可设定投影区域(图案像)的重复区域52a~52f。 Thus, using the shutter 30 in a non-scanning direction (Y direction) to set the size and shape of the boundary portion of the projection area, the projection area may be set (pattern image) of the overlapping region 52a ~ 52f. 另外,因遮蔽器30的前端部(相当开口K的部份)的X方向的宽度向Y方向逐渐缩小形成倾斜形,可遮断投影区域的边界部各别对应的光路的一部份,可向投影区域的周边连续的减衰在重复区域的累计曝光量。 Further, since the front end portion of the width of the shutter 30 (corresponding to the opening part K) in the X direction inclined tapering shape in the Y direction, a portion of the light path can be blocked in the boundary portion corresponding to the projection area of ​​the individual, to be projection region surrounding continuous reduction in cumulative decay exposure amount in the overlap area.

图8中,投影区域的边界部51a、51e、51i的平面的倾斜角度,设定成与遮蔽器30A的前端部的倾斜角度一致。 8, the boundary region of the projection portion 51a, 51e, 51i of the inclined angle of the plane is set to coincide with the inclination angle of the distal end portion 30A of the shutter. 同样地,投影区域的边界部51d、51h、51l的平面的倾斜角度,设成与遮蔽器30B的前端部的倾斜角度一致。 Similarly, the boundary area of ​​the projection portion 51d, 51h, 51l of the inclination angle of the plane, arranged to coincide with the inclination angle of the distal end portion 30B of the shutter. 遮蔽器30A,将其前端部配置在边界部51a或51e对应的光路一部份,设定重复区域52a或52c,使扫描曝光时,在重复区域52a(52c)的累计曝光量向-Y侧大略连续的衰减。 Shutter. 30A, the front end portion 51a disposed at a boundary portion or a part 51e corresponding to the optical path is set overlap area 52a or 52c, so that during the scanning exposure, the -Y side in the overlapping region 52a accumulated exposure amount (52c) of roughly continuous decay. 遮蔽器30B,将其前端部置在边界部51l或51h对应的光路一部份,设定重复区域52f或52d,使扫描曝光时在重复区域52f(52d)的累计曝光量向+Y侧大略连续的衰减。 Shutter 30B, the distal end portion thereof disposed in the optical path of a boundary portion or a portion 51l corresponding to 51h, 52d or 52f is set repeat region, an exposure amount accumulated in the overlapping region 52f (52d) when the scanning exposure to the + Y side rough continuous decay.

如上所述,由视野光圈20、遮光板40反遮蔽器30将投影区域分割为多个,其大小、形状可任意设定。 As described above, the field stop 20, the light shielding plate 40 trans shutter 30 is divided into a plurality of projection regions, their size, shape can be arbitrarily set. 如此,由设定遮蔽器30的位置,在扫描曝光时,对向掩模M的照射区域的周边大略连续的衰减累积曝光量,并连续的变化重复区域52a~52f的Y方向累积曝光量。 Thus, the position of the shutter 30 is set, during the scanning exposure, for roughly to the peripheral region of the mask M illuminated continuously accumulated exposure amount of attenuation, and repeated continuously changes in the Y direction area 52a ~ 52f accumulated exposure amount.

回到图2,在基板台PST上,设有光检测器41。 Returning to Figure 2, the substrate on the stage PST, is provided with an optical detector 41. 光检测器41为检测照射在感光基板P的该曝光的光量有关情报的设备,该检测的信号输出至控制装置CONT。 41 is a photodetector detecting the light irradiation apparatus related to the amount of information of the photosensitive substrate P is exposed, and outputs the detection signal to the control unit CONT.

又,该曝光的光量有关的情报,包括物体面上单位面积所照射的曝光的量,或单位时间内放射的曝光的光量。 Further, the information relating to the exposure light amount per unit area of ​​surface of an object comprising exposing the irradiated amount, or the amount of light emitted per unit time of exposure. 在本实施例中,该曝光的光量有关的情报,以照度表示说明。 In the present embodiment, the exposure light amount information relating to luminance explanatory.

该光检测器41为计测感光基板P上的各投影光学系统Pla~PLg的对应位置的曝光照射量的照度感应器,如图24(a)所示,由CCD感应器构成。 The photodetector 41 for the projection optical system on the photosensitive substrate P is exposed measuring an amount corresponding to the irradiation position Pla ~ PLg illuminance sensor, FIG. 24 (a), the CCD sensor consists. 光检测器41由配置基板台PST上成Y方向的引导轴(未图标)支持,设置成与感光基板P同一平面的高度,由检测器驱动部驱动,可在与扫描方向(X方向)直交的方向(Y方向)移动。 Photodetector 41 is supported by the Y-direction, the configuration of the substrate stage PST guide shaft (not shown) arranged to the height of the photosensitive substrate P in the same plane, driven by the detector driving unit, may be in the scanning direction (X direction) orthogonal direction (Y direction).

该光检测器41,在一次或多次的曝光之前,由基板台PST的X方向的移动,及检测器驱动部的Y方向的驱动,在投影光学系统Pla~PLg对应的各投影区域的下方被扫描。 The optical detector 41, one or more times before exposure, is moved by the substrate stage PST in the X direction, the Y direction and the driving detector driving unit, below the projection optical system in each projection region Pla ~ PLg corresponding It is scanned. 因此,感光基板P上的投影区域50a~50g及该些各50a~50g的各边界部51a~51l的曝光的光量有关情报,可由光检测器41二次元的检测。 Thus, the projection area on the photosensitive substrate P 50a ~ 50g and each of the plurality of boundary portions 50a ~ 50g of each of the exposure light amount information relating 51a ~ 51l, the second element of the detector 41 by the light detector. 光检测器41检测的曝光的光量有关的情报输出至控制装置CONT。 Exposure unit CONT light amount detected by the light detector 41 of information related to the control output. 此时,控制装置CONT,依基板驱动部PSTD及检测器驱动部的各驱动量,可以检测出光检测器41的位置。 At this time, the control apparatus CONT, by driving the respective driving unit PSTD amount of the substrate and the detector driving unit, it is possible to detect the position of the light detector 41.

如图9所示,在掩模M的图案区域中形成像素图案44及,位于该像素图案44的Y方向两端的周边电路图案45a、45b。 9, the pixel pattern 44 is formed and located in the Y direction of the pixel pattern 44 across the peripheral circuit patterns 45a, 45b in the region of the pattern of the mask M. 在像素图案44中,对应多个像素的多个电极,形成整齐规则配列的图案。 In the pixel pattern 44, the plurality of electrodes corresponding to the plurality of pixels, forming neat regular shape pattern. 在周边电路图案45a、45b中,形成驱动像素图案44的电极的驱动电路。 In the peripheral circuit patterns 45a, 45b, forming a drive circuit for driving the pixel electrode pattern 44.

各个投影区域50a~50g依所定的大小设定,此时,如图8所示,设长边的长度为L1,短边的长度为L2,邻接投影区域的间隔(投影区域Y方向距离)为L3。 Each projection region 50a ~ 50g by a predetermined size is set at this time, as shown, the length of the long side is located L1 8, length of the short side is L2, the interval (distance projection area Y direction) is adjacent to the projection area L3.

又,图9所示掩模M的周边电路图案45a、45b,为与图10所示感光基板P的周边电路图案61a、61b同一尺寸,同一形状,配置在掩模M上可受两端外侧的投影光学系统50a、50g曝光。 Further, as shown in FIG. 9 circuit pattern of the mask M perimeter 45a, 45b, as shown in the outer periphery of the circuit pattern of the substrate P and the photosensitive 61a, 61b of the same size, same shape, the mask M may be disposed on both ends of FIG. 10 by the projection optical system 50a, 50g exposure. 掩模M的像素图案44,与感光基板P的像素图案60,X方向的长度相同,但Y方向长度不同。 44 the pixel pattern of the mask M, the pixel pattern 60 with the photosensitive substrate P, the same length in the X direction, the Y-direction but with different lengths.

其次,说明利用具有上述构成的曝光装置EX,对曝光EL同步移动掩模M与感光基板P进行扫描曝光,并使掩模M的图案像的一部份重复曝光,分成多次的扫描曝光,在感光基板P连接曝光图案的方法。 Next, using the exposure apparatus EX having the above-described configuration, the exposure EL the mask M and the synchronous mobile photosensitive substrate P scanning exposure, a part of the pattern image of the mask M and repeat exposure, scanning exposure is divided into multiple, the method of connecting the photosensitive substrate exposed pattern P.

在以下的说明中,掩模台MST及基板台PST的移动,全部由控制装置CONT控制,透过掩模台驱动部MSTD及基板台驱动部PSTD操作。 In the following description, moving the mask stage MST and the substrate stage PST, the entire driving unit PSTD operation through a mask stage driving unit MSTD and the substrate stage by the control unit CONT.

又,在以下的说明中,如图9所示,将在掩模M上形成的图案,分割成两个区域,即分割图案46,Y方向长度为LA包含周边电路图案45a及像素图案44的一部份;以及分割图案47,Y方向的长度LB包含周边电路图案45b及像素图案44的一部份。 Further, in the following description, as shown in FIG. 9, the pattern formed on the mask M, is divided into two regions, i.e., the division pattern 46, Y-direction length LA of the peripheral circuit comprising a pixel pattern 45a and the pattern 44 part of; the division pattern 47 and the length LB Y direction pattern comprising a peripheral circuit portion 45b and the pixel pattern 44. 将该些分割图案46、47各个的一部重复曝光,分成两次的扫描曝光在感光基板P上进行图案合成。 The division of these patterns 46 and 47 each of a repeat exposure, scanning exposure is divided into two pattern synthesis on a photosensitive substrate P. 然后,感光基板P上全体的曝光图案为如图10所示,因两次的扫描曝光,形成的分割图案(曝光区域)62,Y方向长度为LA,包含周边电路图案61a与像素图案60的部份,以及分割图案(曝光区域)63,Y方向长度为LB,包含周边电路图案61b与像素图案60的部份。 Then, the entire exposure pattern on a photosensitive substrate P as shown in Figure 10, because the two scanning exposure, the division pattern (exposure region) formed by 62, Y-direction length of LA, comprising a peripheral circuit pattern 61a and the pixel pattern 60 parts, and the division pattern (exposure region) 63, Y-direction length of an LB, containing part of the peripheral circuit pattern 61b and the pixel pattern 60. 该全体的曝光图案即由该些二组分割图案62、63合成。 I.e., the entire exposure pattern 62 and 63 are synthesized by two groups of the plurality of division patterns.

此处,长度LA为投影区域50a的短边的+Y方向端点,与投影区域50e的短边与在对应50e的光路配置的遮蔽器30B的交点之间的Y方向的距离。 Here, the short side of LA + Y direction length of the projection end regions 50a, the distance between the intersection of the Y direction of the projection area 30B of the short side 50e and arranged in a corresponding light path 50e of the shutter. 长度LB为投影区域50c的短边与配置于对应投影区域50c的光路的遮蔽器30A的交点,与投影区域50g的短边的-Y方向端点间的Y方向的距离。 The optical path length LB of the intersection of the projection region 50c of the shutter 30A is shorter sides of the projection region 50c is disposed corresponding to the distance between the Y direction and the projection 50g of the short side of the -Y direction region endpoint.

又,设分割图案62与分割图案63,在感光基板P上的重复区域(接合部)64重叠;设重复区域64的Y方向的长度LK与投影区域50a~50g的重复区域52a~52f同一距离。 Further, the division pattern 62 and the divided pattern 63, the overlapping region (joint portion) on the photosensitive substrate P overlaps 64; 52a ~ 52f disposed repeat the same overlap area from the projection area and the length LK of the region 64 in the Y direction 50a ~ 50g of .

则,重复区域64的Y方向的距离的长度LK,如图9所示,由遮蔽器30B的Y方向的位置与投影区域50e来设定,与在投影区域50e之内向+Y侧连续衰减累计曝光量的接续部48的Y方向距离一致。 The length of the distance in the Y direction overlap area 64 LK, 9, is set by the shutter 30B in the Y direction and the position of the projection region 50e, 50e and the projection region within the + Y side of the continuous attenuator accumulated the exposure amount in the Y direction from the connection portion 48 of the same. 同样地,长度LK由遮蔽器30A的Y方向的位置与投影区域50c来设定,与在投影区域50c内的同-Y侧连续衰减累计曝光量的接续部49的Y方向距离一致。 Similarly, the length LK is set by the position of the projection area 50c of the shutter 30A in the Y direction, the -Y side with the same region in the projection 50c of the continuous attenuator accumulated exposure amount of the Y-direction connection portion 49 of the same distance. 亦即,设定遮蔽器30A、30B各别的前端部的形状(倾斜角度),使接续部48与49的Y方向的距离一致。 That is, the shape setting shutter 30A, 30B of the respective distal end portion (inclination angle) of the same distance in the Y direction of the connection portion 48 and 49.

又,在检测遮蔽器48、49各别的前端部位置时,可使用如图24(b)、(c)所示的感应器,移动至感应器检测光量为一半(约50%)时的位置,再对合此位置亦可。 Moreover, when the detector shield 48, 49 respective front end position, can be used as shown in FIG 24 (b), (c) the inductor shown, half (approximately 50%) to the detection of the light amount sensor position, then this position may involution.

在掩模M上,依遮蔽器30形成接续部48、49的各位置,即欲进行接续曝光的各区域已预先设定好,在相当该接续部48、49的欲设定位置(接续曝光区域)的掩模M的图案近傍,设置为对合遮蔽器30的位置的位置对合标记60(60A、60B)。 M on the mask, according to the respective position of the shutter 30 are formed connecting portions 48 and 49, for each region Jiyu exposed connection pre-configured, setting the position to be equivalent to the connection portions 48 and 49 (Continued exposure region) of the mask M in the vicinity of the pattern, the position of engagement to the position of the shutter 30 combined marks 60 (60A, 60B).

以下,参照图11说明曝光顺序。 Hereinafter, with reference to FIG. 11 illustrates the exposure sequence. 本实施例为,将掩模M的分割图案46、47的接续部48、49,在感光基板(玻璃基板)P接续合成,以制造较掩模M的连续图案区域45a、44、45b更大的液晶元件。 In this embodiment, the connecting portion 48, 49, 46, 47, the division pattern of the mask M, the successive synthesis photosensitive substrate (glass substrate) P, to produce a continuous pattern of the mask M than the region 45a, 44,45b greater the liquid crystal element.

首先,由控制装置CONT预先设定,对感光基板P的掩模M的图案配置位置有关的情报,及在掩模M的图案接合位置有关的情报。 First, by the control device CONT is set in advance, the configuration of the pattern position of the mask M photosensitive substrate P related information, and information relating to the position of engagement in the pattern of the mask M. 即在感光基板P上的掩模M的分割图案46、47各别需曝光的位置,预先设定,同时在罩莫M上的接续部48、49的设置位置,亦先设定。 I.e., on the photosensitive substrate P division pattern of the mask M for an exposure of the respective positions 46, 47, set in advance, while the position is provided on the connection portion of the cover M Mo 48 and 49, also previously set.

控制装置CONT,驱动视野光圈20与遮光板40的同时也驱动掩模台MST,对合掩模M的图案,以设定曝光EX照射的照射区域。 The control device CONT, the drive field stop 20 and the light shielding plate 40 of the MST also drives the mask stage, the mask M on the combined pattern to set the irradiation region irradiated with the exposure EX. 又,控制装置CONT使用投影光学系统Pla~PLg各别设置的视野光圈20及遮光板40,调整开口K的大小及形状,来设定在感光基板投影的投影区域50a~50g的扫描方向(X方向)的宽度,及非扫描方向(Y方向)的宽度。 Furthermore, the use field stop control unit CONT Pla ~ PLg projection optical system 20 and the respective light-shielding plate disposed 40, K adjusting the opening size and shape, to set the scanning direction of the projection area of ​​the photosensitive substrate, the projection 50a ~ 50g of (X width direction) width, and the non-scanning direction (Y direction).

然后,控制装置CONT,依据预先设定的格式化的曝光处理有关情报,设定持续曝光进行之际的遮蔽器的位置。 Then, the control apparatus CONT, processing relating to information formatted according to a preset exposure, exposure duration is set on the occasion of the position of the shielding.

此处,在本实施例,如图10所示。 Here, in the present embodiment, as shown in FIG. 在第一次的扫描曝光时,遮蔽器30B配置成遮住投影区域50e的一部份;遮蔽器30A则设定成避开光路。 In the first scanning exposure, shutter 30B is configured to cover a portion of the projection area 50e; shutter 30A is set so as to avoid the light path. 另一方面,在第二次的扫描曝光时,遮蔽器30A配置成遮住投影区域50c的一部份,遮蔽器B别设定成避开光路。 On the other hand, when the second scanning exposure, the shutter 30A is configured to cover a portion of the projection area 50c, the shutter is set to B not avoid the light path.

控制装置CONT,设定第一次扫描曝光进行时的遮蔽器30B的位置(步骤S2)。 The control device CONT, a set position when the first shutter scanning exposure 30B (step S2).

即,控制装置CONT,对在掩模M的曝光EL的照射区域(即分割图案46)的一边的接续部48内设置的掩模M的图案,对合继续曝光用的蔽遮器30B的位置。 That is, the control apparatus CONT, the exposure of the shot areas in EL the mask M (i.e., division patterns 46) of the mask M is provided within the side 48 of the connection portion pattern, the position of the shield cover is engaged with the continued exposure of 30B .

具体地说,控制装置CONT,将设于掩模M上与接续部(重复区域)48对应的位置对合标记60B,与遮蔽器30B的前端部的位置对合。 Specifically, the control unit CONT, the connecting portion is provided with (repeat region) corresponding to a position of engagement 48 of the mask M on the mark 60B, a position with the front end portion of shutter 30B together. 在掩模M的位置对合标记60B与遮蔽器30B合对位置之际,如图12的模式图所示,由设在基板台PST的校准用发光部70射出校准光线,通过投影光学系统PL照射到掩模的位置对合标记60B。 On the occasion of closing flags 60B and 30B is bonded to the shielding position, shown in schematic view in FIG. 12, provided on the substrate stage PST which collimates the light emitted from the calibration, the position of the mask M with the light emitting portion 70 by the projection optical system PL to the irradiation position of the mask mark for engagement 60B. 照射到掩模M的位置对合标记60B的校准光,透过掩模后,通过遮蔽器30B的前端部近傍,在校准用受光部71受光。 To the irradiation position of the mask mark M for engagement 60B of the collimated light, after passing through the mask, through the front end portion 30B of the shielding vicinity, receiving the calibration light receiving portion 71. 此时,一面将校准光照射位置对合标记,一面将遮蔽器30B在Y方向移动,就可产生受光部71接受的校准光被遮蔽器30B遮光,受光量只有例如50%的状态。 At this time, the light irradiation side of the calibration position, the shutter 30B side in the Y direction together marker, can produce a light receiving portion 71 receiving the collimated light by the light blocking shutter 30B, only the light quantity of state, for example, by 50%. 此时,受光部71的检出信号输出到控制装置CONT,控制装置CONT,将受光部71从有接受校准光的状态到变为无受光状态时的遮蔽器30B的位置,对照位置对合标记60B,判断遮蔽器30B已经对合位置。 At this time, by detecting the signal light output unit 71 to the control unit CONT, the control unit CONT, the receiving position of the shutter when the light unit 71 from having to accept collimated light state to become non-light receiving state 30B, and controls the position of engagement marker 60B, shutter 30B is determined to have been engaged position. 遮蔽器30B与位置对合标记60B位置对准了,对接续部48也对位了。 30B and the shutter closing position alignment mark 60B, the connection portion of the bit 48 also.

此处,位置对合标记60B,设在掩模M的-X侧端部及+X侧端部二处。 Here, the position of the mark 60B together, is provided on the -X side end portion of the mask M and the + X side end portion of two. 该二位置对合标记60B各别与遮蔽器30B的位置对合,预先做好,就可依据该些预做的位置情报设定遮蔽30B的位置再行扫描曝光,可用遮蔽器30B设定所望的接续部48。 The two positions of engagement with the respective position of the mark 60B on the shutter 30B together, pre-made, can be done according to the position of these pre-set information re-shielding position 30B of scanning exposure, shutter 30B can be used to set the expectations the connecting portion 48.

如以上所述,在遮蔽器30B与掩模位置对合标记60B的位置对合后,控制装置CONT,将此时的遮蔽器30B及掩模台MST(掩模M)的位置有关情报,在记忆装置(未图标)记忆(步骤S3)。 As described above, in the shutter 30B of the engagement position of the mask mark 60B of the engagement, the control means CONT, the shield case 30B and the MST and the mask stage (mask M) information related to a location, in memory means (not shown) and memory (step S3).

其次,控制装置CONT,设定第二次扫描曝光进行时,遮蔽器30A的位置(步骤S4)。 Next, the control apparatus CONT, the second time is set for the scanning exposure, the position of the shutter 30A (Step S4).

即,控制装置CONT,对在掩模M的曝光EL的照射区域(分割图案47)的一边的接续部49内的图案,对合继续曝光用的遮蔽器30A的位置。 That is, the control apparatus CONT, the pattern of the connecting portion 49 of the inner side of the irradiation area of ​​the exposure in EL the mask M (division pattern 47), the shutter closing position 30A of the exposure continues.

具体地说,控制装置CONT,将设于掩模M上与接续部(重复区域)49对应的位置对合标记60A,与遮蔽器30A的前端部的位置对合。 Specifically, the control unit CONT, the location on the mask M provided with a connecting portion (overlapping region) corresponding to the mark 49 on the engagement 60A, the position of the distal end portion of the shutter 30A is engaged. 在掩模M的位置对合标记60A与遮蔽器30A的位置合对,可用图12说明的方法同样的顺序进行。 In the engaged position of the mask M on the mark 60A and 30A shield the position of engagement, the same order of the available methods 12 described in FIG. 由遮蔽器30A与位置对合标记60A位置对合,对接续部49亦可对准位置。 30A and the shutter 60A mark the position of engagement of the engagement position, the connection 49 may also be aligned with the position of the unit.

此处,位置对合标记60A,亦设在掩模M的-X侧端部及+X侧端部的二处。 Here, the position of the engagement marker 60A, is also provided at the -X side end portion of the mask M and the two + X side end portion. 该二处位置对合标记60A各别与遮蔽器30A的位置对合,预先做好。 The position of two position marks 60A engaged with the respective engagement of the shutter 30A, the pre-made. 就可依据该些位置情报边设定遮蔽器30A的位置边做扫描曝光,可用遮蔽器30A设定所望的接续部49。 Connecting portion 30A can be set to a position shutter according to the plurality of position information of the edge doing the scanning exposure, shutter 30A can be used to set the desired 49.

如以上所述,遮蔽器30A与掩模位置对合标记60A位置对合后,控制装置CONT,将此时遮蔽器30A及掩模台MST(掩模M)的位置有关情报在记忆装置记存(步骤S5)。 As described above, the shutter 30A and the mask mark 60A engaged position after engagement position, the control unit CONT, the case shutter 30A and the MST mask stage (mask M), the position of the information in the memory means credited (step S5).

其次,进行各投影区域50a~50g的照度校正及位置检测。 Second, the illuminance and the correction position detection is performed 50a ~ 50g each projection region.

先在基板台PST未载置感光基板P的状态,在对应感光基板P上的分割图案62(长LA的部份)的区域,开始曝光动作(步骤S6)。 In the first substrate stage PST is not placed state photosensitive substrate P corresponding to the photosensitive region on the substrate P division pattern 62 (part length LA), the exposure operation is started (step S6).

具体的说法为,首先,控制装置CONT驱动滤光器驱动部14,移动滤光器13,使光源1来的光束以最大透过率透过滤光器13。 Specifically to say, first, the control unit CONT drives the filter driving section 14, the filter 13 moves the light beam to the maximum transmittance of light transmitted through a filter 13. 滤光器13移动时,光束由光源1透过椭圆镜1a照射。 Moving filter 13, the light beam irradiated by the light source 1 through an elliptical mirror 1a. 照射的光束透过滤光器13,半透明镜11、掩模M,投影光学系统Pla~PLg等之后,到达基板台PST上。 After the beam passes through the irradiation filter 13, semi-transparent mirror 11, the mask M, the projection optical system Pla ~ PLg the like, onto the substrate stage PST. 此时,将掩模M移动到一个,在曝光EL的照射区域不会形图案等的位置。 At this time, the mask M is moved to a, in the irradiated regions without exposing the EL position of the pattern shape or the like.

此时,各投影区域50a~50g已由各视野光圈20及遮光板40设定,遮蔽器30B已退离光路。 In this case, 50a ~ 50g has 40 sets of each projection region by the light shielding plate 20 and the field stop, shutter 30B is retracted from the light path.

与此同时,将光检测器41在分割图案62对应的区域内,往X方向及Y方向移动,使在投影光学系统PLa~PLg对应的投影区域50a~50g扫描。 At the same time, the photodetector 41 divided in the region corresponding to the pattern 62, moved in the X and Y directions, so 50a ~ 50g scanning projection optical system PLa ~ PLg corresponding to the projection area. 由扫描的光检测器41可顺次计测各投影区域50a~50g的照度,及边界部51a~51l的照度Wa~Wl(步骤S7)。 By the scanning photodetector 41 may be sequentially measured illuminance for each of the projection regions 50a ~ 50g, and the illumination of the boundary portion 51a ~ 51l Wa ~ Wl (step S7).

光检测器41的检测信号输出至控制装置CONT。 The detection signal output from the photodetector 41 to the control unit CONT. 控制装置CONT依据光检测器41的检测信号进行影像处理,检出各投影区域50a~50g及边界部51a~51l的形状及照度。 Perform image processing control unit CONT based on the detection signal of the photodetector 41, the detection and 50a ~ 50g each illumination shape and the projection area of ​​the boundary portion 51a ~ 51l. 然后,控制装置CONT将该些边界部51a~51l的照度Wa~Wl记存于记忆装置。 Then, the control unit CONT those boundary portions of the illuminance 51a ~ 51l Wa ~ Wl credited to the memory means.

其次,依据光检测器41计测的边界部51a~51l的照度Wa~Wl,为使该些照度Wa~Wl略成所定值且(|Wa-Wb|、|Wc-Wd|、|We-Wf|、|Wg-Wh|、|Wi-Wj|、|Wk-Wl|)成为最小,一边用光检测器41计测照度,一边对每一照明元件IMa~IMg各别驱动滤光器13(步骤S8)。 Secondly, according to the photodetector 41 is measured illuminance boundary portion 51a ~ 51l of Wa ~ Wl, such that the plurality of illumination Wa ~ Wl slightly into the predetermined value and (| Wa-Wb |, | Wc-Wd |, | We- Wf |, | Wg-Wh |, | Wi-Wj |, | Wk-Wl |) is minimized, while light detector 41 measuring the illuminance, while lighting each respective drive element IMa ~ IMg filter 13 (step S8).

如此,可修正各光路的光束的光量。 Thus, the amount of light beam can be corrected in each optical path.

此时,由光源1照射的光束,由半透明镜11将其一部份射入光检测器12,光检测器12检测入射光束的照度,检出的照度信号输出到控制装置CONT。 In this case, the light beam irradiated by the light source 1, a portion of one of the semi-transparent mirror 11 is incident on the photodetector 12, the photodetector 12 detects the illuminance of the incident beam, the illuminance detection signal to the control unit CONT. 因此,控制装置亦可依据光检测器12检出的光束的照度,控制滤光器驱动部14,使该照度维持所定之值,以调整各光路的个别光量。 Thus, the illuminance control means may also be based on the light beam detected by the photodetector 12, the filter driving section 14 controls so that the illumination maintenance of a predetermined value to adjust the light intensity of each individual light path.

控制装置CONT,依据扫描的光检测器41检测的曝光光的光量有关的情报,推求各个边界部51a~51l的位置(步骤S9)。 The control device CONT, 41 depending on the amount of light detected by the photodetector scans of information related to the exposure light, the position of each of the boundary portions Deriving 51a ~ 51l (step S9).

亦即,依据扫描的光检测器41的检测信号,控制装置CONT,推求对所定的坐标系统的各边界部51a~51l的形状,再依该推求的形状,求得各边界部51a~51l在该所定的坐标系统的位置。 That is, according to the detection signal of the scanning light detector 41, the control apparatus CONT, inquire of each of the boundary portions of the predetermined coordinate system of a shape 51a ~ 51l, then follow the shape of the inquire of each of the boundary portions is obtained in 51a ~ 51l the position of the predetermined coordinate system. 具体地说,推求三角形状的边界部51a~51l之中,如前端位置或图心位置等代表性的指定位置。 Specifically, among the boundary portions of the triangular inquire 51a ~ 51l, such as the leading end specified position of a representative position or a center position, etc. FIG.

此时,光检测器41的位置,可依据各驱动部对基准位置的驱动量推求。 In this case, the position of the light detector 41, according to the driving amount of each may inquire the reference position of the drive unit. 即,设定光检测器41的初期位置(待机位置)等为基准位置,可推求扫描的光检测器41对该基准位置移动的位置。 That is, the photodetector 41 is set in the initial position (standby position) as the reference position, can inquire scan reference photodetector 41 to the position of the moved position. 控制装置CONT,依据光检测器41对基准位置的移动位置,推求各边界部51a~51l对基准位置的位置。 The control device CONT, according to the position of the optical detector 41 moves the reference position, the position 51a ~ 51l Deriving the reference position of each boundary portion.

然后,控制装置CONT,在记忆装置记存各边界部51a~51l在所定坐标系统的位置。 Then, the control device CONT, a position memory 51a ~ 51l each boundary portion in a predetermined coordinate system in the storage device in mind. 此时各投影区域50a~50g的相对位置也记忆了。 At this time, the relative position of each of the projection regions 50a ~ 50g has memories.

在遮蔽器30B退离光路的状态,进行各投影区域50a~50g光量调整及位置检测后,控制装置CONT依据记忆装置的情报,将遮蔽器30B配置在步骤S2设定的位置,在此状态进行曝光动作。 In the shutter 30B is retracted from the state of the light path, for each of the projection regions 50a ~ 50g light amount adjustment and the position detector, the control unit CONT based on information memory means, the shutter 30B arranged at a position at step S2 set in this state, exposure action. 然后,控制装置CONT用光检测器41检测相当于接续部48的投影区域50e的小区域KB的照度。 Then, the control unit CONT photodetector 41 detects the projection area corresponding to the connection portion 50e of the small region 48 KB illuminance.

此处,小区域KB因遮蔽器30B,向-Y方向连续的衰减在感光基板P上的重复区域64的累积曝光量。 Here, because of the small area shutter 30B KB, continuous decay on the photosensitive substrate P in the -Y direction of the overlap area 64 of the integrated amount of exposure.

光检测器41的检测信号输出到控制装置CONT,控制装置CONT依据光检测器41的检测信号进行影像处理,检出小区域KB的形状及照度。 The detection signal output from the photodetector 41 to the control unit CONT, the control unit CONT for image processing according to the detection signal of the photodetector 41, the detection of small shape and illuminance region KB. 以后,控制装置CONT,在记忆装置记忆该小区域KB的形状及照度Wkb。 Later, the control unit CONT, and the shape of the illumination Wkb memorized in the small area KB. 控制装置CONT再依据光检测器41检测的曝光的光量有关的情报,推求该小区域KB的位置及形状。 Then the control unit CONT based on the light amount of the exposure light detector 41 detects the relevant information, inquire the position and shape of the small area KB. 所谓小区域KB的位置,乃指三角形小区域KB中的如前端位置或图心位置等代表性指定位置。 KB-called small area position specified representative Naizhi triangle centroid position of the end position or location in a small area, such as KB.

小区域KB的照度,位置及形状求得后,控制装置CONT,将遮蔽器30B退离光路同时配置遮蔽器30A于步骤S4设定的位置,在此状态进行曝光动作。 KB illuminance after a small area, the position and shape is obtained, the control unit CONT, the shutter 30B is retracted from the light path while the shutter 30A arranged at a position set in the step S4, the exposure operation in this state. 控制装置用光检测器41检测相当于接续部49的投影区域50c的小区域KA的照度Wka(步骤S11)。 Control means photodetector 41 detects the projection area corresponding to the small area KA of the connecting portion 49 of the illuminance WKA 50c (step S11).

此处,小区域KA因遮蔽器30A,向+Y方向连续的衰减在感光基板P的重复区域64的累积曝光量。 Here, because of the small area KA shutter. 30A, in the + Y direction of the continuous attenuation accumulated exposure amount P in the overlapping region 64 of the photosensitive substrate.

光检测器41的检测信号输出到控制装置CONT,控制装置CONT,依据光检测器41的检测信号进行影像处理,检出小区域KA的形状及照度。 The detection signal output from the photodetector 41 to the control unit CONT, the control apparatus CONT, perform image processing according to the detection signal of the photodetector 41, the detection of small area KA shape and illuminance. 然后,控制装置CONT,在记忆装置记忆该小区域KA的形状及照度Wkb。 Then, the control apparatus CONT, the small area KA in shape and illuminance Wkb memorized. 控制装置CONT再依据光检测器41检测的曝光的光量有关的情报,推求该小区域KA的位置及形状。 Then the control unit CONT depending on the amount of light detected by the photodetector 41 of the exposure-related information, inquire the position and shape of the small area KA. 所谓小区域KB的位置,乃指三角形的小区域KA中的如前端位置或图心位置,等代表性指定位置。 KB-called small area position, the small triangular area KA Naizhi as in FIG distal position or center position, and other representative designated location.

控制装置CONT,依据在步骤S10求得的小区域KB的照度Wkb,及在步骤S11求得的小区域KA的照度Wka,利用光检测器41一面计测照度,一面在照明元件IMc与IMc驱动滤光器13,使照度Wka与Wkb大略成所定之值,且使(|Wa-Wb|、|Wc-Wd|、|We-Wf|、|Wg-Wh|、|Wi-Wj|、|Wk-Wl|、|Wka-Wkb|)之值为最小(步骤S12)。 The control device CONT, determined at step S10 based on the small area WKB KB illuminance, and illuminance determined in step S11 Wka small area KA, the one side by the light detector 41 measuring the illuminance, and the illumination element IMc drive side in IMc filter 13, illuminance Wka and Wkb roughly to the prescribed value, and so that (| Wa-Wb |, | Wc-Wd |, | We-Wf |, | Wg-Wh |, | Wi-Wj |, | Wk-Wl |, | Wka-Wkb |) of the minimum value (step S12).

控制装置CONT,依据在步骤S10及S11检测的小区域KA及小区域KB的形状,进行该些小区域KA与KB的形状修正(步骤S13)。 The control device CONT, depending on the shape of small area KA and KB a small area at step S10 and S11 is detected, for which some small area KA and KB shape correction (step S13).

例如,对前面检出的小区域KB的形状,后面检出的小区域KA的形状非如所望的形状时,或如在扫描曝光时未均一重复的场合,或小区域KA及KB形成的重复区64的宽度LK与各投影区域52a~52f的宽度,大幅差异的场合等时,需要驱动投影区域50e或投影区域50c对应的投影光学系统PLe或PLc的像移动机构19,倍率调整机构23、直角棱镜24、27以修正移位,变换比例,回转等的像特性(透镜校正)。 For example, the shape of the small region in front of the detection of the KB, the shape of the shape of the small area KA of the non-detected later as desired, or as non-uniform during the scanning exposure is repeated occasions, or a small area KA and KB repeating formed when the case of equal width region 64 LK and the width of each projection region 52a ~ 52f, a substantial difference, required to drive the projection area 50e or the projection region 50c corresponding to the projection optical system PLe or PLc like moving mechanism 19, magnification adjustment mechanism 23, right-angle prism 24, 27 to correct the shift, the conversion ratio, rotation and other characteristics of the image (lens correction).

又,控制装置CONT,在投影区域50a~50g的各别形状不是所定的形状时,或邻的投影区域50a~50g间的重复区域52a~52f的宽度,因扫描曝光而变化的场合等,皆能够驱动各投影光学系统PLa~PLg的像移动机构19,倍率调整机构23、直角棱镜24、27以修正特性。 Further, the control apparatus CONT, when the individual shape 50a ~ 50g is not a predetermined shape in the projection region, the width of the overlapping region 50a ~ 50g between or adjacent projection regions 52a ~ 52f of the case by the scanning exposure is changed, etc., are each projection optical system can be driven PLa ~ PLg like moving mechanism 19, magnification adjustment mechanism 23, 24 and 27 to the rectangular prism correction characteristic. 控制装置CONT,将该些修正值记忆于记忆装置。 The control device CONT, the more the correction value to a memory storage device.

如上所述,进行包含接续部的投影区域50a~50g的校正(照度校正、透镜校正)后,进行实际曝光处理,控制装置CONT将掩模M配置于曝光的光路上,同时经未图标的装载机在基板台PST和基板架PH装载感光基板P(步骤S14)。 After described above, comprising a connecting projection area correction portion 50a ~ 50g (illuminance correction, a correction lens), the actual exposure process, the control unit CONT of the exposure mask M arranged on the optical path, while not shown by loading machines the substrate stage PST and the substrate holder PH is loaded photosensitive substrate P (step S14).

进行第一次的扫描曝光,控制装置依据上述各项校正工程设定的设定值或修正值,依视野光圈20及遮光板40设定在扫描方向及非扫描方向具有所定的宽度的投影区域;同时驱动掩模台MST,配合掩模M的图案设定曝光EL照射的照射区域。 Performing a first scanning exposure, the control means according to the setting value or a correction value for correcting the above construction set, by setting the field stop 40 and the light shielding plate 20 having a predetermined width in the scanning direction and the non-scanning direction of the projection region ; while driving the mask stage MST, with the pattern of the mask M is set irradiation region irradiated with the exposure EL. 然后,控制掩模台MST的位置,使掩模M的图案区域中至少第一次扫描曝光所用的分割图案46,能受到曝光EL的照射,同时,如图12说明的,使用在掩模M形成的位置对合标记60B,调整遮蔽器30B的位置,使遮蔽器30B遮住投影区域50g对应的光路,以及遮蔽投影区域50e的一部份(步骤S15)。 Then, the control position of the mask stage MST, so that the pattern area of ​​the mask M in at least a first scanning exposure used in the division pattern 46 can be irradiated with the exposure EL, while illustrated in FIG. 12, using the mask M the engagement position mark 60B is formed, a mask in the position 30B, the shutter 30B so that the light path blocked region 50g corresponding to the projection, and a shielding portion 50e of the projection area (step S15).

再利用掩模M的位置对合标记60B,将基板台PST上载置的感光基板P与掩模M的位置对合(步骤S16)。 Reusing the mask M engagement position mark 60B, the position of a photosensitive substrate placed on the substrate stage PST and the mask M to P co (step S16).

此处,在感光基板P的继续曝光区域,亦即相当于感光基板P的重复区域64的图案区域近傍,预先设有基板位置对合标记72。 Here, in the continued exposure area of ​​the photosensitive substrate P, i.e., the region corresponding to the pattern area of ​​the photosensitive substrate P repeats the vicinity of 64, the position of the pre-bonded with the substrate indicia 72. 控制装置CONT,对合掩模台MST载置的掩模M的位置对合标记60B,与基板台PST上载置的感光基板P的位置对合标记72的位置,就可在感光基板P的曝光区域62对合掩模M的分割图案46的位置曝光。 The control device CONT, the position of the mask stage MST engagement of the mask M is placed on the bonding mark 60B, a photosensitive substrate on the substrate stage PST and the mounted position of engagement of the P position of the mark 72 can be exposed photosensitive substrate P 62 pairs of engagement pattern of the mask M in the position of the exposure region 46 is divided.

又,在掩模M的位置对合标记60B与感光基板P的位置对合标记72位置对合之际,例如图13的模式图所示,由设在掩模M上方的发光部75对掩模位置对合标记60B照射校准光。 Further, in the engagement position of the mask M on the mark 60B and the position of the photosensitive substrate P for engagement position mark 72 on the occasion of engagement, for example, FIG. 13 is a schematic view shown from the light emitting portion disposed over the mask 75 on the mask M 60B light irradiation position of the mold alignment mark apposition. 照射在位置对合标记60B的校准光穿过掩模M,经投影光学系统PL照射到感光基板P的基板位置对合标记72。 In the irradiation position of closing flags 60B the collimated light passes through the mask M, via the projection optical system PL is irradiated onto the photosensitive substrate P on the substrate position mark 72 together. 然后,在基板位置对合标记72反射的反射光,再经过投影光学系统PL及掩模M的位置对合标记60B,由设在掩模M上方的受光部76检出。 Then, in the substrate engagement position of the reflected light 72 reflected by the marker, and then through the position of the projection optical system PL and the mask M on the mark 60B together, is detected by the light receiving portion provided above the mask M 76. 依据掩模位置对合标记60B的反射光,及基板位置对合标记72的反射光,调整基板台PST的位置,使掩模位置对合标记60B与基板位置对合标记72成为一致就可以。 Based on the combined position of the mask mark reflected light, and the position of the substrate mark 60B for engagement of the reflected light 72, a position adjusting substrate stage PST, the mask mark 60B engaged position and the position of the substrate mark 72 is bonded can be consistent.

另外,因感光基板P为玻璃基板,故可不需检测基板位置对合标记的反射光,例如在基板台设受光部76',依据通过掩模位置对合标记60B的光,与通过基板位置对合标记72的光,对合掩模M与感光基板P的位置也可以。 Further, since the photosensitive substrate P is a glass substrate, it can skip the detection position of the substrate reflected light engagement labeled, for example, the substrate stage arranged light receiving portion 76 ', according to the via mask position photosynthetic mark 60B, and passing through the substrate position bonding the marker light 72, the mask M and the position of engagement may be a photosensitive substrate P.

此处,基板位置对合标记72,与掩模位置对合标记同样地,在感光基板P的-X侧端部与+X侧端部的两个处所形成。 Here, the position of the substrate mark 72 together, in the same manner, two spaces are formed in the -X side end of the photosensitive substrate P and the + X side end portion of the engagement position of the mask mark. 该些+X侧及-X侧的掩模位置对合标记60B,各别与+X侧及-X侧的基板位置对合标记72,预先对合好保存。 The plurality of mask position + X side and the -X side of the bonding mark 60B, and the respective position of the substrate + X side and the -X side of the bonding mark 72, Hao stored in advance. 依据该些位置情报进行扫描曝光,可提高曝光精度。 These scanning exposure according to the location information, to improve exposure accuracy.

如上所述,进行掩模M与感光基板P的位置对合,及掩模M与遮蔽器30B的位置对合后,控制装置CONT对感光基板P进行第一次的扫描曝光处理(步骤S17)。 As described above, the position of the mask M and the substrate P on the photosensitive engagement position, with the mask M and the shutter 30B of the engagement, the control unit CONT of the first photosensitive substrate P scanning exposure process (step S17) .

首先,将分割图案62(长度LA的部份)对应的部份曝光。 First, the division pattern 62 (part of the length LA) corresponding to the exposure part. 此场合,投影光学系统PLf对应的照明元件IMf的照明快门6,受快门驱动部6a的驱动插入光路中,如图10所示,遮住了投影区域50f对应的照明光的光路。 This case, the projection optical system corresponding to the lighting element IMf PLf illumination shutter 6, the drive into the optical path by the shutter driving portion 6a, shown in Figure 10, the optical path of the illumination light covering the projection area corresponding to 50f. 此时,照明元件IMa~IMe与IMg的照明快门6,开放着各光路。 In this case, the lighting element IMa ~ IMe IMg illumination shutter 6, the optical paths open. 但,遮蔽器30B遮住投影区域50e的一部分,及投影区域50g的全部光路。 However, the shielding portion 30B is covered 50e of the projection area, and all of the optical path of the projection area 50g. 由于遮光器30B,在投影区域50e形成有Y方向减光特性的小区域KB,对感光基板P设定包含周边电路61a与像素图案60的一部份的Y方向长度LA的曝光区域。 Since the shutter 30B, 50e formed in the projection region in the Y direction dimming characteristic small area KB, P is set on the photosensitive substrate comprises a Y-direction length of the peripheral circuit portion 61a of the pixel pattern exposure region 60 of the LA.

然后,向X方向同步移动掩模M与感基板P,进行第一次的扫描曝光。 Then, the synchronous movement of the mask M and the substrate P in the X direction, a sense, the scanning exposure for the first time. 如此,如图10所示,在感光基板P上曝光由投影区域50a、50b、50c、50d及投影区域50e的一部份设定的分割图案62。 Thus, as shown in FIG. 10, the region exposed by the projection part 50a is set, 50b, 50c, 50d and 50e of the projection area 62 is divided in a pattern on a photosensitive substrate P. 而且,由于遮蔽器30B设定的小区域KB,因扫描曝光在分割图案(曝光区域)62的-Y侧的一边形成的重复区域64,为向该分割图案62的-Y侧连续的衰减曝光量。 Further, since the shutter 30B is set small region KB, the overlapping region is formed by scanning exposure of one side of the -Y side of the division pattern 62 (exposure regions) 64, as to the division pattern 62 of the -Y side of the continuous decay exposure the amount.

其次,为进行第二次的扫描曝光,进行基板台PST对准所定位置的位置对合(步骤S18)。 Next, a second for the scanning exposure, the position of the substrate stage PST aligning a predetermined position of engagement (Step S18).

具体的方法为,将基板台PST向+Y方向的所定距离进步移动同时进行微调调整。 The particular method, the progressive movement of the substrate stage PST in the + Y distance in a predetermined direction while fine-tuning adjustments.

为进行第二次扫描曝光的基板台PST的位置对合,将在掩模M的内接续部48对应形成的掩模位置对合标记60A,与在感光基板P的内重复区域64对应形成的基板位置对合标记72的位置对合。 For involution numerals 60A, in the overlap region corresponding to the photosensitive substrate P position of the mask 64 formed on the second scanning exposure position of the substrate stage PST on the joint, the inner connecting portion 48 corresponds to the mask M is formed bonded substrate position mark 72 on the position of engagement. 控制装置CONT,如图13所示顺序说明,由发光部75对掩模位置对合标记60A发射校正光,再依据该校正光透过投影光学系统照射在感光基板P的位置对合标记72的反射光,与掩模位置对合标记60A的反射光,调整基板台PST的位置,使掩模对合标记60A与基板位置对合标记72成为一致。 The control device CONT, 13 described order, the mask consisting of 75 to mark the position of the light emitting portion 60A of the engagement correction light emission, and then based on the corrected positive refractive projection optical system 72 is irradiated through involution mark at a position of the photosensitive substrate P reflected light, the position of engagement with the mask mark 60A of the reflected light, adjusting a position of the substrate stage PST, the mask on the mark 60A with the engagement of the engagement position of the substrate marks 72 is the same.

如上述,使用在掩模M形成的掩模位置对合标记60,与在感光基板P形成的基板位置对合标记72,在继续曝光之际对合接续部的位置,可提高决定的接续部位置的精度。 As described above, in the use position of the mask M is formed on the mask mark 60 together with the substrate position in the substrate P is formed on the photosensitive bonding mark 72, on the occasion of exposure continued engagement position connecting portion, the connecting portion can be improved decision accuracy of the position.

掩模M与感光基板P的位置对合之后,控制装置CONT,将遮蔽器30B退离曝光EL的光路,同时使遮蔽器30A在Y方向移动,遮住投影区域50c的一部份,及投影区域50a的全部光路(步骤S19)。 The position of the mask M and the substrate P on the photoconductor after the engagement, the control means CONT, the shutter 30B EL back light path from the exposure, while the shutter 30A is moved in the Y-direction, a cover portion 50c of the projection region and the projection all light path region 50a (step S19).

此时的遮蔽器30A的与掩模M的位置对合,亦如图12说明,可对掩模位置对合标记60A重合遮蔽器30A的位置。 At this time, the position of the shield with the mask M on the joint, as also described in FIG. 12, the position of the mask mark 60A coincides with a position of engagement 30A of the shutter 30A. 在所定位置对合的遮蔽器30A,在投影区域50c的一部份,形成具有向Y方向减光特性的小区域KA。 At a predetermined position of the shutter. 30A engaged, in a part of the projection region 50c is formed having a small area KA dimming characteristic in the Y direction. 又,投影光学系统PLb对应的照明元件IMb的照明快门6,受快门驱动部6a的驱动插入光路之中,如图10所示,将投影区域50b对应的光路的照明光遮断。 Further, the projection optical system PLb IMb corresponding lighting element illumination shutter 6, driven by a shutter driving portion 6a is inserted into the optical path, the optical path of the illumination projection area 50b corresponding to the photo-interrupter 10 shown in FIG. 此时,照明元件IMa,IMc~IMg的照明快门6开放着各光路。 In this case, the lighting element IMa, IMc ~ IMg illumination shutter 6 open the respective optical paths. 此时,遮蔽器30A遮住投影区域50c的一部份及投影区域50a对应的光路,对感光基板P设定包含周边电路61b及像素图案60的一部份的Y方向长度LB的曝光区域。 In this case, the shielding region 50c projection 30A is covered and a part of the projection region corresponding to the light path 50a, the substrate P is set on the photoreceptor comprises a portion 61b of the peripheral circuit and the pixel pattern 60 in the Y direction length LB of the exposure area.

如此,控制装置CONT,依据第一次扫描曝光的小区域KB形成的重复区域64(接续部48),向+Y方向移动基板台PST,使第二次扫描曝光所投影曝光的小区域KA的接续部49与第一次扫描的接续部对合。 Thus small area KA, the control unit CONT, the first overlapping region based on the scanning exposure KB small region 64 is formed (connection portion 48), movement of the substrate stage PST in the + Y direction, scanning exposure of the second projection exposure and the connection portion 49 connecting the first portion of the scan engagement.

此处,在第二次扫描曝光的进步移动时,或在遮蔽器30A的向光路上配置时,控制装置CONT,依据校正时在记忆装置记忆的各设定值,修正值,可对感光基板P修正影像特性,或对遮蔽器30B的微调整。 Here, when moving the second progressive scanning exposure, or when the shutter 30A is arranged to the optical path, the control apparatus CONT, the correction based on each setting value memorized, the correction value, to the photosensitive substrate P characteristics correction image, or finely adjust the shutter 30B. 亦即可能调整影像特性(移动、变换比率、回转)使基于小区域KA的重复区域64与基于小区域KB的重复区域64成一致。 That is possible to adjust the image characteristics (moving, conversion ratio, rotation) that the repeating region 64 coincides with the 64 KB area into a small repeating areas of small area KA.

又,可以调整基板台PST的位置,使图案的重复区域64与重复区域以外各别曝光的照射量略成一致。 Further, the substrate stage PST may be adjusted in position so that the overlapping region 64 of the pattern repeat region other than the irradiation amount slightly to conform to the respective exposure. 即,各小区域KA及KB的各别的形状或光量在步骤S10~S13中预先检测,调整记存。 That is, each of the respective small area KA and KB of the amount of light or the shape previously detected in step S10 ~ S13, the adjustment credited. 控制装置CONT,依据记忆的各小区域KA、KB的形状或光量,进行微调整基板台PST的位置,使图案的重复区域64与重复区域以外(即区域62、63)的照度略成一致。 The control device CONT, based on each of the small memory area KA, KB or shape of the light amount, to finely adjust the position of the substrate stage PST, so that the overlapping region 64 and the illumination pattern is outside (i.e., regions 62 and 63) slightly overlapped area to coincide. 具体的说,第一次的扫描曝光的小区域KB,与第二次扫描曝光的小区域KA,各别的在重复区域64的曝光照射量为如图14所示的照度分布。 Specifically, scanning exposure of the first small region KB, scanning exposure with the second small area KA, the irradiation amount of the respective repeating the exposure area 64 is an illuminance distribution shown in Figure 14. 如为图14(a)所示的第一次扫描曝光的小区域KB与第二次扫描曝光的小区域KA,在重复区域64的曝光的合计照射量,较重复区域64以外的曝光照射量低的场合,调整基板台PST的位置,使加大重叠的重围,如图14(b)所示,可使全部位置的曝光的照射量略成一致(步骤S20)。 As FIG. 14 (a) shown in the first scanning exposure KB small area and second small area of ​​the scanning exposure KA, the total exposure amount in the irradiation region 64 was repeated, except the region irradiated with exposure amount than 64 repeat lower case, to adjust the position of the substrate stage PST, so that increased overlapping encirclement, FIG. 14 (b), the exposure can all position slightly to conform irradiation amount (step S20).

或者,驱动遮蔽器30,调整在重复区域64的曝光照射量,使重复区域64的曝光照射量与重复区域64以外的曝光照射量大略一致,也可以。 Alternatively, the shutter driver 30 to adjust the irradiation dose in the exposure region 64 is repeated, so that the amount of overlap area irradiated with the exposure repeated exposure greater than the exposure area 64 64 substantially agree, it is possible. 如上述方法,可修正各光路光束的光量。 The above-described method, the correction amount of each light path of the beam of light.

又,第二次扫描曝光时,遮蔽器30A在光路上的配置,因在校正时已预先设定好其所望的位置对基准位置的关系,故依据该设定值,移动遮蔽器30也可。 Further, when the second scanning exposure, shutter 30A arranged in the optical path, because when they are pre-configured correction desired relationship between the position of the reference position, so that according to the set value, movement of the mask 30 may also .

在第二次扫描曝光时,基板台PST的上步移动,不用基板位置对合标记72与掩模位置对合标记60A也可以。 In the second scanning exposure, the step movement of the substrate stage PST, without the position of the substrate mark 72 and the engagement position of the mask mark 60A can be engaged. 此场合,基板台PST的上步移动,可依据校正时预先求得的情报上步移动。 This case, the step movement of the substrate stage PST may be moved based on the step correction information obtained in advance. 另外,亦可依据校正时求得的各小区域KA、KB的位置,移动基板台PST,亦即,在第一次扫描曝光投影曝光的重复区域64(接续部48)对应基准位置的位置关系已求出,第二次扫描曝光时,即设定基板PST的位置,使投影曝光的接续部49与该重复区域64成所定的位置关系。 Further, each small region may be obtained according to correction KA, KB position, movement of the substrate stages PST, i.e., the first overlapping region 64 of the exposure scanning exposure projection (connecting portion 48) corresponds to the positional relationship between the reference position It has been determined, when the second scanning exposure, i.e., the substrate PST set position, the projection exposure with the overlapping region 64 into a predetermined positional relationship between the connection portion 49.

然后,掩模M与感光基板P向X方向同步移动,进行第二次扫描曝光(步骤S21)。 Then, the photosensitive mask M and the substrate P in the X direction move synchronously, a second scanning exposure (step S21).

如图10所示,在感光基板P上,有由投影区域50c的一部份、50d、50e、50f、50g设定的分割图案63曝光。 As shown in FIG 10, on a photosensitive substrate P, and there is made a part of the projection area 50c, 50d, 50e, 50f, 50g set division pattern 63 exposed. 因遮蔽器30A设定的小区域KA,扫描曝光时在分割图案63(曝光区域)的+Y侧的边形成的重复区域64,有由该分割图案63边向+Y方向连续的衰减的光量分布,与第一次扫描曝光时形成的重复区域64重复,可获得所定的合成曝光量。 Because of the small area KA shutter 30A is set, during the scanning exposure in the division pattern 63 (exposure area) + the overlapping region formed by the edges Y side 64, there is the amount of the divided pattern 63 side in the + Y direction of the continuous attenuation of light distribution, the overlapping region is formed when a scanning exposure is repeated with 64, a predetermined exposure amount obtained synthesis.

如上所述,完成用一片掩模M,对比该掩模大的感光基板P继续曝光(步骤S22)。 As described above, complete with a mask M, a large contrast of the mask is continuously exposed photosensitive substrate P (step S22).

如以上说明,对由视野光圈20及遮光板40设定的图案影像(投影区域),配置可在Y方向移动的遮蔽器30,就能够任意设定在掩模M的图案的接续部(分割位置)48、49。 As described above, an image of a pattern (projection area) set by the field stop 20 and the light shielding plate 40 disposed in the Y-direction movable shutter 30, it is possible to arbitrarily set the connection portion of the pattern of the mask M (split position) 48, 49. 因此,能够任意设定在感光基板P形成的图案的大小,能够高率制造任意的元件。 Accordingly, the size can be arbitrarily set in the pattern P formed on the photosensitive substrate, a high rate can be manufactured of any element.

又,遮蔽器30被设成在非扫描方向移动,具有向照明光学系统IL的照射区域的周边,连续地衰减在图案接续部(重复区域)的累计曝光量的减光特性,故能设定接续部的曝光量为所望之值,可使重复区域64及重复区域64以外的曝光量一致。 Further, the shield 30 is provided to move in the non-scanning direction, the irradiation region with the surrounding illumination optical system IL is, the dimming characteristics of the accumulated exposure amount pattern connecting portion (overlapping region) is continuously attenuated, it can be set connection portion for the exposure value for the look, can overlap area overlapping region 64 and the exposure amount uniform than 64. 因此能进行精度良好的曝光处理。 It is possible to perform exposure processing with good precision.

又,遮光板40及遮蔽器30可分别对视野光圈20移动,因此能任意设定对感光基板P的曝光EL的投影区域50a~50g的大小或形状,故继续曝光之际,可提升接合精度或曝光量的均一化。 Further, the light shielding plate 40 and the shield 30 may move the field stop 20, respectively, it is possible to arbitrarily set the size or shape of the projection area exposure of the photosensitive substrate P EL 50a ~ 50g, it is continued exposure occasion, can improve the accuracy of engagement or the exposure amount uniform.

利用视野光圈20、遮光板40及遮蔽器30,将投影区域分割成多个的50a~50g,将该些投影区域接合曝光,形成所谓的多镜扫描型曝光装置,不仅保持良好的成像特性,且不需装置大型化就可形成大的图案。 Using a field stop 20, the light shielding plate 40 and the shutter 30, the projection area is divided into a plurality of 50a ~ 50g, the engagement of these projection exposure region, a so-called multi-mirror scanning type exposure apparatus, not only to maintain a good imaging characteristics, and the size of the device can be formed without a large pattern. 投影光学系统PL,由在扫描方向的直交方向并列的多个投影光学系统PLa~PLg形成,多个光学系统PLa~PLg之中,遮住所定的光学系统的光路,就能够容易地调整每次扫描曝光的投影区域。 The projection optical system PL, a plurality of the projection optical system in a direction perpendicular to the parallel scanning direction PLa ~ PLg formed, among the plurality of optical systems PLa ~ PLg, cover a predetermined optical path of the optical system, can be easily adjusted each time scanning exposure projection region. 另外,在接合分割图案62、63之际,不需使用大型的掩模M,能够在大型的感光基板P形成均一的图案。 Further, on the occasion of joining the division pattern 62 and 63, without using a large mask M, a uniform pattern can be formed in a large photosensitive substrate P. 因此,能够防止装置的大型化及成本增大。 Accordingly, it is possible to prevent the size and cost of the apparatus increases.

分割成多个的投影区域50a~50g的形状为梯形,故在继续曝光进行之际,接续部与接续部以外的曝光量,容易达成一致。 Is divided into a plurality of areas of the projection 50a ~ 50g shape is trapezoidal, so that in the occasion of continued exposure, the exposure amount than the connection portion with the connection portion, is easy to agree.

在掩模M上,相当于继续曝光区域的接续部48、49,设有为与遮蔽器30位置对合的位置对合标记60A、60B,利用该些位置对合标记,能够精确对合遮蔽器30的位置。 M on the mask, the region corresponding to the connecting portion 48, 49 is continuously exposed, with the position of the shutter 30 to the position of engagement of the engagement marks 60A, 60B, together with which these position marks can be accurately bonded to the shield 30 position. 因此,能在重复区域60曝光所望的曝光量。 Therefore, the exposure amount in the overlap area 60 desired exposure.

在感光基板P上,相当于继续曝光的区域64,亦设有与掩模位置对合标记60A、60B位置对合的基板位置对合标记72,故掩模M与感光基板的位置对合精良,可提高曝光精度,而且,为进行多次的扫描曝光,在上步移动基板台PST时,亦使用位置对合标记60A、60B、72就可以,所以,可提升位置对合精度。 On the photosensitive substrate P, and it corresponds to the exposed area 64 continues, and the mask is also provided with engagement position mark 60A, 60B to the position of the substrate bonded together position marker 72, so that the mask M and the position of the photosensitive substrate bonded well , exposure accuracy can be improved, and as a multiple of the scanning exposure, when the step movement of the substrate stages PST, also using the position of engagement marker 60A, 60B, 72 can, therefore, can improve the accuracy of the position of engagement.

本实施例中,对投影区域50a~50g重复的边界部51a~51l的照度,进行计测、修正使略成一致,使接续部52a~52f的照度均一。 In this embodiment, the projection area 50a ~ 50g repeated illuminance boundary portion 51a ~ 51l performs measurement, so that the correction slightly to conform the connecting portion 52a ~ 52f of illuminance uniformity. 再变更遮蔽器30或遮光板40的Y方向的位置,在分割图案62、63的重复区域64的照度,与其它区域照度相同,使图案全体用均一的曝光量曝光,可使图案的线条宽度在图案全面均一。 Before changing direction Y shielding the light shielding plate 30 or 40 position, the illuminance of the overlapping region 62, the division pattern 64 is the same as the other illumination areas, all of the pattern with the exposure amount uniform exposure, a line pattern width can in full uniform pattern. 因此,能提升曝光后的液晶元件的品质。 Thus, to improve the quality of the liquid crystal element after exposure.

在图9、图10中,重复区域64的Y方向长度LK,设定成与投影区域50a~50g的重复区域52a~52f同一长度。 In FIG. 9, FIG. 10, Y direction of the length of the overlapping region 64 LK, 52a ~ 52f is set to the same length of the overlapping region of the projection region 50a ~ 50g. 但,可变更遮蔽器30A(30B)的前端部的倾斜角,使分割图案62及63间的重复区域64的Y方向长度,与上述的重复区域52a~52f的Y方向长度不同,也可以。 However, the change shutter 30A (30B) of the inclination angle of the distal end portion of the division pattern in the Y direction length of the overlap area 62 and 63 64, the Y-direction of said overlap area 52a ~ 52f of different lengths may be used.

又,在本实施例中,在分割图案62与分割图案63接合之际,在第一次扫描曝光时,用遮蔽器30B遮住投影区域50e的一部份,形成小区域KB;在第二次扫描曝光时,用遮蔽器30A遮住投影区域50c的一部份,形成小区域KA。 Further, in the present embodiment, on the occasion of joining the division pattern 63 and the division pattern 62, in the first scanning exposure, a shutter 30B cover a portion of the projection area 50e is formed KB small region; a second when the scanning exposure, shutter 30A with a cover portion 50c of the projection area, forming a small area KA. 使该些小区域KA、KB重叠,但形成小区域KA、KB的投影区域,在投影区域50a~50g中的任一个皆可以。 So that some small area KA, KB overlap, but the formation of the projection area small area KA, KB, in any one area of ​​the projection 50a ~ 50g are in a can. 即,多次的扫描曝光在任意的投影区域,形成具有Y方向减光特性的小区域,可重叠该些小区域。 That is, a plurality of times at an arbitrary scanning exposure projection area having a small area are formed in the Y direction dimming characteristic, which may be some small overlap region. 尚且,照明快门6的可对任何光路遮光。 Yet, the illumination of the light shielding shutter 6 may be any light path.

本实施例,第一次扫描曝光使用遮蔽器30B,第二次扫描曝光使用遮蔽器30A。 The present embodiment, the first shutter 30B using the scanning exposure, the scanning exposure using the second shutter 30A. 但,如图15所示,第一次扫描曝光使用遮蔽器30B,第二次扫描曝光则不用遮蔽器,改用照明快门6遮住所定投影区域的光路也可以。 However, as shown in Figure 15, the first shutter 30B using the scanning exposure, the exposure of the second scan without shutter, the shutter switch the illumination light path of the projection region may be predetermined cover 6. 又,图15中,第一次扫描曝光时,用照明快门6遮住投影区域50f对应的光路;第二次扫描曝光时,用照明快门6挡住投影区域50a、50b对应的光路。 Further, in FIG. 15, the first scan exposure illumination light path shutter cover 6 corresponding to the projection region 50f; second time scanning exposure, the shutter 6 to block the illumination projection region 50a, 50b corresponding to the light path.

上述实施例,为并列的多个光路有七个,与之对应设置照明元件IMa~IMg,及投影光学系统PLa~PLg的构成。 The above-described embodiments, a plurality of parallel optical paths with seven, provided corresponding lighting element IMa ~ IMg, and the projection optical system PLa ~ PLg configuration. 但,设置光路一个,照明元件及投影光学系统各一个的构成亦可。 However, a light path is provided, each constituting a lighting element and also a projection optical system. 即,可适用于分成多个扫描曝光,使掩模的图案影像的一部份重复曝光的曝光方法及曝光装置。 That is, a plurality of divided applicable to scanning exposure, the exposure method and exposure apparatus of a part of a pattern image of a mask repeated exposure.

再者,并列的多个光路并不限于七个,例如六个以下或八个以上的构成也可以。 Moreover, the plurality of optical paths in parallel is not limited to seven, for example, six or eight or more of the following may be constituted.

上述的实施例,检测投影区域的曝光的光量有关情报的光检测器41只设一个,但亦可设置多个与基准位置的位置关系已知道的光检测器。 The above-described embodiment, the light amount information relating to an exposure area of ​​the projection optical detector 41 is provided a detector, but also the positional relationship between a plurality of the reference position has been known photodetector. 可利用该些多个光检测器同时检测各边界部51a~51l的照度Wa~Wl。 These may utilize the plurality of light detectors simultaneously detect the illuminance of each of the boundary portions 51a ~ 51l Wa ~ Wl. 此场合。 This occasion. 能够高速检测各投影区域50a~50g及边界部51a~51l的照度,或边界部51a~51l的位置,可提高作业性能。 Detecting a high speed, and illuminance 50a ~ 50g portions 51a ~ 51l of the boundary, the boundary region or the position of each projection portion 51a ~ 51l can be improved workability.

上述实施例为,在进行校正之际,用光检测器41检出照度,再依据该检出结果进行校正的构成。 Examples of the above-described embodiment, the correction is performed on the occasion, the detected illuminance photodetector 41, then the configuration according to the detection result of the correction. 但在校正时,对实际的试验用感光基板进行曝光处理,计测形成的图案的形状,依据此计测结果进行校正亦可。 However, when corrected for the actual test photosensitive substrate with the exposure processing, the shape of the pattern formed on the measurement, correction is also based on this measurement result.

又,上述实施例,第一次扫描曝光完了后,为进行第二次扫描曝光的上步移动后的感光基板P的位置对合,使用在掩模M形成的掩模位置对合标记60,与在感光基板P形成的基板位置对合标记72。 After addition, the above-described embodiment, the first scanning exposure is over, the photosensitive substrate after the exposure is performed on the second scanning step of moving the position P on the joint, using a mask in the position of engagement of the mask M formed indicia 60, the position of the substrate P is formed on a photosensitive substrate indicia 72 on the engagement. 但在校正时,顶先设定上步移动的距离,再依据该设距离上步移动亦可。 However, when the correction, the step on top of the first moving distance is set, then based on the design step is also moved distance.

又,液晶元件(半导体元件)为由多个材料层堆积形成,例如在进行第二层以下的曝光处理时,因显像处理或各种热处理,感光基板P有变形的场合。 Further, the liquid crystal element (semiconductor element) a plurality of stacked layers is formed by material, for example during the processing of the second layer following exposure, developing treatment or by various heat treatments, a photosensitive substrate P occasion deformation. 此场合,只要在校正时推求感光基板P的比例等影像特性的变化量,算出修正值(偏移量),再依据该修正值上步移动即可。 This case, as long as the amount of change in the image characteristic inquire proportion photosensitive substrate P when correcting the calculated correction value (offset), and then based on the correction value to move step. 再者,此场合亦如前述的情况,可依回转、移位等各影像特性的变化量,驱动遮蔽器30或遮光板40的位置设定投影区域,以进行继续曝光的控制。 Moreover, this case and as the aforementioned case, the change amount of each image characteristics to follow the rotation, displacement, etc., the drive position of the light shielding plate 30 or the shutter 40 is set to the projection area, continue to control the exposure.

又,上述实施例中,光源1只有一个,但光源1可不只一个每一光路各设一个,共设多个光源,用光导引(light guide)设备等将多个光源合成一个光束,再把光分配到各光路的构成也可以。 Further, the above-described embodiment, only one light source 1, the light source 1 may be more than one set for each optical path of each one of a plurality of total light, a light guide (light guide) devices like a plurality of light beams synthesized, then the light distributed to the optical path may be constituted. 此场合,不仅可排除光源光量的差异产生的不良影响,而且光源的一个消失亦仅降低全体的光量,可防止被曝光的元件成为不能使用。 In this case, to not only eliminate the adverse effects of differences in the amount of light generated by the light source, but also a source disappears only reduce the amount of light of the whole to prevent the exposed element becomes unusable. 又,设置多个光源1,在光束的合成、分配之际,照射的曝光的照射量,可用ND滤光器等可改变透过光量的滤光器,插入光路中,以调整成所望的照射量,控制各投影区域50a~50g的曝光的照射量亦可。 And, a plurality of light sources 1, the combined beam, dispensing occasion, the irradiation of the irradiation amount of exposure, the ND filter or the like may be used to change the amount of light transmitted through the filter into the optical path to adjust the illumination to the desired amount controls each projection region of the irradiation exposure amount may also 50a ~ 50g.

又,上述实施例中,投影区域50a~50g的形状为梯形,但,六角形、菱形或平行四边形也可用。 Further, the above-described embodiment, the shape of the projection area 50a ~ 50g is trapezoidal, however, hexagon, parallelogram or diamond can also be used. 只是,因使用梯形形状可使继续曝光容易安定地进行。 But, due to the continued exposure using a trapezoidal shape can be easily performed stably.

上述实施例为,用两次扫描曝光在感光基板P上将画面合成的构成,但并不以此为限,例如用三次以上的扫描曝光在感光基板P上合成画面的构成亦可。 Examples of the above-described embodiment, the scanning exposure in the photosensitive twice with P on the substrate constituting the screen synthesis, but not limited to, for example more than three times the scanning exposure may also be configured in the synthesized picture photosensitive substrate P.

又,上述实施例中,对投影光学系统PL用分成多个(PLa~PLg)的设备说明,但,由图6可容易了解,由视野光圈20与遮光板40形成矩形缝隙(slit)的单透镜的投影光学系,或者非矩形,有圆弧缝隙的曝光区域的曝光装置也可适用。 Further, the above-described embodiment, the projection optical system PL is divided into a plurality of (PLa ~ PLg) device described, however, can be readily understood from Figure 6, the rectangular slot (Slit) is formed by a single field stop 20 and the light shielding plate 40 lens of the projection optical system, or non-rectangular, the exposure apparatus exposure area can also be applied arcuate slot. 而且,利用第二遮光板30对曝光区域移动,可在位意的位置接合。 Further, the light shielding plate 30 by the second exposure area is moved in the bit positions intended to engage.

图16标进行二次扫描曝光,将图案分割为三个分割图案Pa、Pb、Pc后合成之例。 FIG. 16 labeled secondary scanning exposure, the pattern is divided into three division patterns Pa, Pb, Pc after synthesis Example. 图16所示的多个投影区域不是多鸟状,而是一列的配置形态。 A plurality of projection region 16 are not shown in FIG like many birds, but arranged in a form. 在曝光图案Pa时,用遮蔽器30B形成接续部80a;图案Pb曝光时,用遮蔽器30A及30B形成接续部80b及80c;图案Pc曝光时,用遮蔽器30A形成接续部80d。 In the exposure pattern Pa, the connection portion 80a is formed with a shutter 30B; Pb exposure when a pattern is formed with the connecting portions 80b and 80c shutter 30A and 30B; Pc when patterning exposure, shutter 30A is formed with a connecting portion 80d. 此处,在掩模M的图案的周边,形成有特定的形状周期当做电路图案的周期图案81。 Here, the periphery of the pattern of the mask M formed with a specific shape as the period of the periodic pattern of the circuit pattern 81. 掩模M与遮蔽器30A、30B的位置对合标记60A、60B,在周期图案81的各边界部的相当的位置形成。 The mask M and the shutter 30A, 30B for engagement position marks 60A, 60B, formed at a position corresponding to each boundary portion 81 of the periodic pattern. 如此的周期图案81要继续曝光的场合,从前,因配合各投影区域设定的接续部,接续部的位置不能任意设定,周期图案81继续曝光有因难;在本发明,利用可在Y方向移动的遮蔽器30,能够任意设定接续部的位置,所以能够使在感光基板P形成的多个周期图案81a~81h,与对其配设的配线的线数(间距)一致,能够高精度进行继续曝光。 Such periodic pattern 81 is continuously exposed to the case, from the front, with the connecting portion due to each projection region setting, the position of the connection portion can not be arbitrarily set, periodic pattern 81 is difficult because there are continuously exposed; in the present invention, use may Y direction of movement of the shield 30, the position of the joint portion can be arbitrarily set, it is possible that the plurality of periodic pattern is formed on the photosensitive substrate P 81a ~ 81h, corresponding to the number of lines provided for its wiring (pitch) can be continued exposure with high accuracy.

上述实施例中的遮蔽器30,在其前端部的X方向宽度向Y方向逐渐缩小,形成斜面的遮蔽体,但,只要在扫描时能将重复区域的Y方向的累积曝光量连续地衰减的形状皆可用,例如图17所示,X方向的宽度为向Y方向逐渐缩小形成多个锯齿状也可以。 The above-described embodiments of the shutter 30, the width of the tapered distal end portion thereof in the X direction to the Y direction to form the inclined surface of the shield, but, as long as the accumulated exposure amount capable of scanning in the Y direction overlap area continuously attenuated all can use shape, such as shown in FIG. 17, the width in the X direction is the Y direction gradually decreases may be formed in a plurality of zigzag. 此场合,锯齿部份的Y方向的形成范围,即为重复区域的Y方向长度LK。 This case, the Y-direction Y-direction length range form part of the serrations, i.e. the overlapping region of LK. 又,图17为照明快门6遮住投影区域50f对应的光路的状态。 Further, the illumination shutter 17 is blocked 6-state light path corresponding to the projection area 50f.

上述实施例说明的,由图1以及图9、10等上视图来看,设于投影区域50a附近的遮蔽器30A,与设于投影区域50g附近的遮蔽器30B,为在Y方向互相对向配置。 The above described embodiment, FIG. 1 and FIG. 9, 10 and so on perspective view, a projection 50a provided in the vicinity of the region of the chopper. 30A, and 50g provided in the vicinity of the shutter projection area 30B, as in the Y direction to each other configuration. 但如图18所示,两个能在Y方向移动的遮蔽器30C及30D,在X方向并列配置的构成也可以。 However, as shown, two movable shutter 30C in the Y direction and 3OD, 18 arranged in parallel in the X direction may be configured. 此场合,在成二列配列的投影区域50a~50g中,遮蔽器30C对应-X侧配例的投影区域50a、50c、50e、50g设置;遮蔽器30D则对应+X侧配列的投影区域50b、50d、50f设置。 Projection region 50a in this case, in 50a ~ 50g, the shutter 30C corresponding to the -X side to the two projection region arranging feature embodiment, 50c, 50e, 50g is provided; shutter 30D is corresponding to the + X side arranging projection region 50b , 50d, 50f set. 由遮蔽器30C及30D各别在Y方向移动,遮住多个投影区域之中的特定投影区域的光路,并且设定所定投影区域的大小与形状。 Moving the shutter 30C and 30D in respective Y direction, the light path blocked specific projection area among the plurality of projection areas, and sets the size and shape of the projection area is defined. 此处,遮蔽器30C与30D的Y方向的移动,为同步移动构成亦可,独立移动的构成亦可。 Here, the shutter 30C and 30D the Y direction, may also be configured synchronous movement, may move independently configured. 又,此场合亦可如图18的虚线所示,在遮蔽器30C及30D各别的Y方向的对向位置,配置可在Y方向移动的遮蔽器30C'及30D'。 Further, this case is also shown in dashed lines in FIG. 18, the shutter 30C and 30D to each other in the Y direction to a position arranged in the Y-direction movable shutter 30C 'and 30D'.

在上述的实施例说明中,例如遮蔽器30A遮蔽投影区域30a对应的光路,而且设定投影区域30C的大小与形状,亦即一个遮蔽器30可跨越多个投影区域的配置。 In the above-described embodiment, for example, shutter shielding the optical path 30A corresponding to the projection region 30a, and set the size and shape of the projection region 30C, i.e. the shield 30 may span a plurality of projection regions. 但如图19所示,对多个投影区域50a~50g各别对应的光路,分别配置可在Y方向移动的小型遮蔽器30的构成亦可(图19仅显示投影区域50e对应的遮蔽器30E)。 However, 19, 50a ~ 50g optical path corresponding to the respective plurality of projection regions, respectively, arranged movable in the Y direction a small shield 30 may also be constituted (Figure 19 shows only the projection area corresponding to the shutter 50e 30E ). 要遮住特定投影区的光路时,例如要遮住投影区域50f及50g的光路时,可用该些投影区域50f及50g对应的光路的照明快门6遮光。 When the light path to cover the specific projection area, for example, to cover a projection area of ​​the optical path 50f and 50g, the plurality of available projection region 50f and 50g corresponding to the optical path of the illumination light shielding shutter 6.

又,如图20所示,把投影区域50a~50g各别对应配置的可在Y方向移动的小型斜面遮蔽器30E,与可同时遮蔽多个投影区域的大型平面矩形状的遮蔽器30F组合也可以。 Further, as shown in FIG. 20, the projection region 50a ~ 50g arranged corresponding to the respective movable in the Y direction shutter small ramp 30E, 30F combination of large flat rectangular shutter may be simultaneously shield and also a plurality of projection regions can. 此处,遮蔽器30配置在感光基板P的表面近傍,对感光基板P及掩模M大略共轭的位置,可依如Y方向的移动配置或退出投影光学系统PL与感光基板P之间。 Here, the shield 30 is disposed in the vicinity of the photosensitive surface of the substrate P, the position of the photosensitive substrate P and the mask M roughly conjugate, such as to follow the movement in the Y direction or exit disposed between the projection optical system PL and the photosensitive substrate P.

图21为当做第二遮光板的遮蔽器的其它实施例之图,图21所示的遮蔽器30,为在玻璃基板设铬Cr的点图形(dot pattern)的遮光部份与透过部份之间,可连续的变化透过率的元件。 Other embodiments FIG. 21 is a diagram of a second light shielding plate as the shield, the shield 21 shown in FIG. 30, a dot pattern is provided in the glass substrate is chromium Cr (dot pattern) is transmitted through the light-shielding portion part between elements transmittance continuously changes. 遮蔽器30G为可Y方向移动的构造,设有遮住光线的遮光部77及依所定方透过率透光的透光部78。 30G shutter to be Y-direction moving structure, provided with the light shielding covering portion 77 and the transparent light transmissive portion by a predetermined transmittance 78 side. 遮光部77,为在玻璃基板设不透光材料的铬膜,为透光率几乎为0%的区域。 The light blocking portion 77, a chromium film is provided in the opaque material is a glass substrate, the transmittance is almost 0% in the region. 透光部78,为用不透光材料的铬的点,变化其密度在玻璃板蒸镀,从与遮光部77的交界部向前端部,连续地变化透过率为0~100%的区域。 Light transmitting portion 78 as a point with an opaque material, chromium, deposited on a glass plate having a density change, from the boundary portion changes continuously with the light shielding portion 77 of the forward end portion of the transmittance 0% to 100% of the area . 此处,透光部78的略点的大小,设定在曝光装置EX的解像限界以下。 Here, the light transmitting portion 78 slightly point size, the resolution is set delimiting the exposure apparatus EX or less.

如此,在遮蔽器30G设光量分布调整用滤光器的透光部78,亦可图案像的重复区域,连续地衰减累积曝光量。 Thus, the shutter 30G is provided to adjust the light amount distribution of the overlapping region 78, the pattern image may also be translucent filter portion, the attenuation continuously accumulated exposure amount. 因透光部78,为在玻璃基板蒸镀铬点的图形形成,光量分布的调整可在分子水准的优良精度进行,故在进行继续曝光之际,能够精确地调整重复区域的曝光量。 Due to the light transmitting portion 78, chromium is deposited on a glass substrate dot pattern is formed, adjusting the light quantity distribution may be performed in an excellent level of accuracy of the molecule, so that during continued exposure occasion, to precisely adjust the amount of exposure of the overlapping region.

在上述各实施例中,为调整重复区域的光量分布,使用斜面遮蔽器或锯齿状遮蔽器,或具有所透过率分布的透光部78的遮蔽器,但亦可利用调整遮蔽器的光路方向的位置,调整重复区域的曝光量分布。 In the above embodiments, the light amount adjustment region distribution repeated, using an inclined plane shutter or serrated shutter, shutter or with a light transmitting portion 78 of the transmittance distribution, but can use the shutter adjusting the light path the position and direction of the adjustment of the exposure amount distribution overlapping region. 即如图22(a)所示,把遮蔽器30由对掩模共轭的位置移到离若干的位置(使散焦),使通过遮蔽器30端部的曝光扩散,以所定的光量分布照射掩模。 I.e., FIG. 22 (a), the shutter 30 is moved to the position of the mask from the conjugate position of a plurality (defocus), by exposing the diffusion of the shutter end 30 to a predetermined light quantity distribution illumination of the mask. 此时的扩散光在掩模上的宽度(即形成重复区域的宽度)LK,设照明光学系统IL的开口数为NA,在掩模M上α的位置配置遮蔽器30的场合,为LK=2×α×NA。 At this time, the width of the diffused light on the mask (i.e., a width of the overlap area) LK, provided an illumination optical system IL numerical aperture is NA, α position of the mask M arranged on the shielding case 30, as LK = 2 × α × NA. 如图22(b)所示,在宽度LK的光量分布为向Y方向连续地衰减状态。 FIG. 22 (b), in the light quantity distribution width LK of the Y direction continuously attenuated state. 如此地,调整遮蔽器30在光路方向(Z方向)的位置,亦可形成有所望的宽度LK的重复区域。 Thus, the position of the adjusting shutter 30 in the optical path direction (Z-direction), the width of the overlapping region LK desired can be formed.

本实施例的曝光装置EX,如不使用投影光学系统,改用与掩模M及感光基板P密接,曝光掩模M的图案的近接式曝光(proximityexposure)装置也可以。 The exposure apparatus EX of the present embodiment, without the use of the projection optical system, instead of the mask M and the substrate P in close contact with the photosensitive, a pattern of the exposure mask M proximity exposure (proximityexposure) device may be.

曝光装置EX的用途,并不限用于在角型玻璃板曝光液晶显示图案的液晶用曝光装置。 The use of the exposure apparatus EX, and the angle is not limited to the liquid crystal display glass crystal pattern exposing an exposure apparatus. 例如,在半导体晶圆曝光电路图案的半导体制造用的曝光装置,或制造薄膜磁气读取头的曝光装置皆可适用。 For example, a semiconductor wafer in a semiconductor circuit pattern exposure with the exposure apparatus for producing or manufacturing a thin film magnetic read head of the exposure apparatus can be useful.

本实施例的曝光装置的光源,g线(436nm)、h线(405nm)、i线(365nm)之外,KrF准分子激光(248nm)、ArF准分子激光(193nm)、F2激光(157nm)等皆可使用。 Light, g-line exposure apparatus according to the present embodiment (436nm), h-line (405nm), i-line (365nm) outside, KrF excimer laser (248nm), ArF excimer laser (193nm), F2 laser (157 nm) etc. can be used.

投影光学系统PL的倍率,不只等倍系统,缩小系统及放大系统的任一项皆可用。 Magnification of the projection optical system PL, only the 1x magnification system, reduction system, and any one can use it both amplification system.

投影光学系统PL,在使用准分子激光等的远紫外线的场合,玻璃材料使用石英或萤石等透过远紫外线的材料;使用F2激光或X光线的场合,要用反射屈折系统或屈折系统的光学系统。 The projection optical system PL, using a deep ultraviolet excimer laser or the like occasions, the use of a glass material of quartz or fluorite material, through far-ultraviolet rays; using F2 laser light or X case, use reflective or refractive system of inflection system an optical system.

在基板台PST或掩模台MST使用线性马达的场合,使用气堑承轴的空气浮上型或用洛伦兹力(Lorentz)或电抗力的磁气浮上型的任一项皆可以。 Linear motor is used in the case where the substrate stage PST or the mask stage MST, an air floating type bearing gas cutting axis on the magnetic air flotation or by any Lorentz force (LORENTZ) or an electric resistance type are possible. 又基板台或掩模台,用沿引导部移动的型式或不设引导部的型式皆可以。 And a substrate stage or a mask stage, with the guide portion along the movement pattern or no pattern can be both the guide portion.

基板台或掩模台的驱动装置使用平面马达的场合,使磁铁组及电枢组任一项的一方连接载台,磁铁组与电枢组的另一方设在载台的移动面侧就可以。 Driving the substrate stage or a mask stage device using a plane motor case, and the magnet armature set one group of any one stage is connected to the other group of armature magnet group provided on the moving plane side of the stage can be .

由基板台PST移动产生的反力,如日本专利特开平8-166475号公报所载的,利用框架元件机械的传至地板也可以。 The reaction force generated by the movement of the substrate stage PST, such as the use of floor frame elements contained in the transmitted mechanical No. 8-166475 Japanese Laid-Open Patent may be. 本发明的曝光装置也适用这样的构造。 The exposure apparatus according to the present invention is also applicable to such a configuration.

掩模台MST移动产生的反力,如日本专利特开平8-330224号公报所载的,利用框架元件机械的传至地板也可以。 A reaction force generated by movement of the mask stage MST, as contained in document JP 8-330224, the use of the frame member may be mechanically transferred to the floor. 本发明也适用有这构造的曝光装置。 The present invention is also applicable to an exposure apparatus of this configuration.

如上所述,本案实施例的曝光装置,能将本案权利要求所举的包含各构成要素的各种副系统,保持所定的机械性精度,电气性精度与光学性精度,组合制造。 As described above, the exposure apparatus of the embodiment of the case, the case can cited claims comprising various sub-systems each of the constituents, maintaining a predetermined mechanical accuracy, electrical accuracy and optical properties of accuracy, the compositions manufactured. 为确保该些各种精度,在该组合的前后,需进行对各种光学系统达成光学精度的调整;对各种机械系统达成机械精度的调整,对各种电气系统达成电气精度的调整。 To ensure that these various accuracies, before and after the combination, need to be adjusted to achieve the optical accuracy for various optical systems; adjustment to achieve mechanical accuracy for the various mechanical systems, adjustment to achieve electrical accuracy for various electric systems. 由各副系统组合成曝光装置的工程,包含各种副系统互相间的机械的连接、电气电路配线连接及气压管路的配管连接等。 Each sub-system are combined into engineering exposure apparatus, comprising various sub-system between each of the mechanical connections, electrical circuit wiring connections and air pressure conduit pipe connections. 在该些各种副系统组合成曝光装置的工程之前,当然需先完成各个副系统的组合工程。 Prior to the plurality of sub-systems combined in various engineering exposure apparatus, of course, the need to complete the composition of each sub-system engineering. 各种副系统组成曝光装置的工程完成之后,再进行综合调整,以确保曝光装置整体的各种精度。 After exposure apparatus consisting of various sub-systems of the project is completed, then the overall adjustment to ensure the accuracy of the overall exposure of various devices. 又,曝光装置最好在有温度与清洁度等管理的清净室内制造。 The exposure apparatus is preferably manufactured with a clean room temperature and cleanness management.

半导体元件的制造,如图23所示,经进行元件的机能、性能设计的步骤201,依该设计步骤制造掩模的步骤202,元件基材的基板制造步骤203,依前述实施例的曝光装置,将掩模的图案在基板曝光的基板处理步骤204,元件组合步骤(句合切块工程、接合工程、包装工程)205,及检查步骤206等。 Manufacturing a semiconductor device, shown in Figure 23, the function performed by the element, the design performance of step 201, the step of manufacturing a mask in accordance with the design step 202, the step of manufacturing the substrate of the element substrate 203, the exposure apparatus according to the embodiment the pattern of the mask substrate in a substrate processing step 204 of exposing, the step of combining element (sentence cut works together, bonded engineering, packaging engineering) 205, and step 206 checks the like.

发明效果本发明,在视野光圈及第一遮光板设定的图案像,设置可在扫描方向的直交方向移动的第二遮光板,可任意在掩模设定图案的接续部。 Effect of the Invention The present invention, in the field stop and the pattern image of the first set of light-shielding plate, a second light shielding plate movable in a direction perpendicular to the scanning direction, the connecting portion may be arbitrarily set the mask pattern. 因此,可任意设定在感光基板形成的图案的大小,能够以良好效率制造任意的元件。 Thus, the pattern can be arbitrarily set the size of the photosensitive substrate is formed, an arbitrary element can be produced with good efficiency. 又第一及第二遮光板,可个别对视野光圈移动,可任意设定对感光基板的曝光的照明区域的大小或形状,故在继续曝光之际,能提升接合精度及曝光量的均一度。 And first and second light shielding plate, can be moved individually to the field stop, can be set on the size or shape of the exposure of the photosensitive substrate illumination area, it continues the occasion of exposure, and can improve the accuracy of the exposure amount engagement homogeneity . 又,第二遮光板设成可在扫描方向的直交方向移动,有由向照明光学系统的照射区域的周边,连续地衰减在图案的重复区域的累积曝光量的减光特性,故能够设定接续部的曝光量成所望之值,使重复区域与重复区域以外的曝光量一致。 Further, the second light-shielding plate is disposed to be movable in a direction perpendicular to the scanning direction, the dimming characteristics have accumulated exposure amount of the illumination optical system from the outside to the irradiation region is continuously attenuated repeating pattern area, it is possible to set the exposure amount to the connection portion of the hoped for value, so that repeated exposure amount consistent with the repeat region other than the region. 因此,可进行精度良好的曝光处理,制造高品质的元件。 Accordingly, the exposure process with high accuracy, manufacture of high quality components.

Claims (16)

1.一种曝光装置,具有:照明光学系统,其可用光束照射掩模,和掩模台,其载置掩模,以及基板台,其载置感光基板,该感光基板用于通过曝光该掩模的图案以制造显示组件;该曝光装置可对前述光束于扫描方向上同步移动掩模及感光基板,并分成数次的扫描曝光,使该掩模的图案像的一部分重复曝光地在该感光基板曝光该图案;其特征为具备:视野光圈,用以设定该感光基板上被照明的图案像的扫描方向的宽度;第一遮光板,于光路上与该视野光圈重叠,可设定该图案像的与扫描方向直交的方向的宽度;以及第二遮光板,可在与扫描方向直交的方向移动,设定该图案像的重复区域,同对向照射区域的周边,连续衰减重复区域的累积曝光量,其中该掩模台设置于该照明光学系统与该基板台之间的光路上,且该视野光圈、该遮光板以及该遮蔽器设 1. An exposure apparatus comprising: an illumination optical system, a light beam illuminating the mask which may be used, and the mask table, which mask is placed, and a substrate stage which is placed a photosensitive substrate, the exposure of the photosensitive substrate through the mask for the mold assembly for producing a display pattern; the movement of the exposure apparatus can be synchronized to the scanning direction of the beam mask and the photosensitive substrate, and scanning exposure is divided into several times, so that part of the pattern image of the mask in the exposure of the photosensitive repeated exposing the patterned substrate; characterized by comprising: a field stop, to set the width of the scan direction on the photosensitive substrate is illuminated pattern image; a first light shielding plate, an aperture in the optical path overlaps the field of view, which may be set the pattern width in a direction perpendicular to the scanning direction of the image; and a second light shielding plate, movable in a direction perpendicular to the scanning direction, the overlap area is set as the pattern, with the overlapping region of the irradiation region to the peripheral, continuous attenuation cumulative exposure, wherein the mask table is provided on the optical path between the illumination optical system and the substrate stage, and the field stop, and the light-shielding plate shutter is provided 在对该掩模与该感光基板共轭的位置,且配置于光路上。 In the position of the mask and the photosensitive substrate conjugate, and is disposed on the optical path.
2.如权利要求1所述的曝光装置,其特征为,上述视野光圈与第一遮光板及第二遮光板,形成的照明区域被分割成多个。 2. The exposure apparatus according to claim 1, characterized in that the viewing aperture and the first aperture and the second light shielding plate, divided into a plurality of illumination regions are formed.
3.如权利要求2所述的曝光装置,其特征为,该些分割成多个的照明区域的形状为梯形。 The exposure apparatus according to claim 2, wherein, the plurality of shape of the illumination region is divided into a plurality of trapezoidal shape.
4.如权利要求1所述的曝光装置,其特征为,该第二遮光板为,在玻璃基板上设遮光的图形,利用遮光部份与透光部份之间,连续的变化透过率的组件构成。 4. The exposure apparatus according to claim 1, characterized in that the second light-shielding plate, is provided on a glass substrate of the light-shielding pattern, light-shielding portion and the transparent portion between the utilization, the transmittance continuously changes the components that make up.
5.如权利要求1至4中任一所述的曝光装置,其特征为,配设投影光学系统,可将前述掩模的图案像投影到感光基板,该掩模与感光基板经该投影光学系统配置在共轭的关系位置,同时,上述的视野光圈与第一遮光板及第二遮光板,亦配置在对上述掩模与感光基板共轭的位置。 The exposure apparatus of any one of 1 to 4 according to claim, characterized in that the projection optical system is disposed may be the pattern of the mask image is projected onto the photosensitive substrate, the mask and the photosensitive substrate through the projection optical system configuration position conjugate relationship, while the field of view of the first aperture and the second light-shielding plate light shielding plate is also disposed at the position of the mask and the photosensitive substrate conjugate.
6.如权利要求2或3所述的曝光装置,其特征为,该照明光学系统是由多个照明组件所构成,藉由该些多个照明组件,该些分割成多个的照射区域形成于前述感光基板上。 6. The exposure apparatus of claim 2 or claim 3, wherein the illumination optical system is composed of a plurality of lighting assemblies, with some of the plurality of illumination assemblies, the plurality is divided into a plurality of irradiation regions formed on the photosensitive substrate.
7.如权利要求5所述的曝光装置,其特征为,该投影光学系统是包含多个投影光学系统的构成,藉由该多个投影光学系统,将前述掩模的图案分割为多个并投影至前述基板上。 7. The exposure apparatus according to claim 5, wherein the plurality of projection optical system constituting the projection optical system comprises, by the plurality of projection optical system, the mask pattern is divided into a plurality and projected onto the substrate.
8.一种曝光方法,在光束照射掩模的同时,对该光束于扫描方向上同步移动上述掩模与用于制造显示组件的感光基板,并分成多次扫描曝光使该掩模的图案像的一部份重复曝光,在感光基板上合成该图案的继续曝光方法,其特征为,包括:用视野光圈设定在感光基板上照明的该图案像的扫描方向的宽度;将第一遮光板设置为于光路上与该视野光圈重叠,以设定该图案像的与扫描方向直交的方向的宽度;以及将可在该图案像的扫描方向的直交方向移动,且能将上述重复区域的照射光量向照射区域的周边连续的衰减的第二遮光板,与前述继续曝光的区域对合设定第二遮光板位置。 8. An exposure method, while the light beam illuminating the mask, the beam the mask move synchronously with the photosensitive substrate for manufacturing a display component, and the scanning exposure plural times in the scanning direction of the mask pattern image a part of repeated exposure, the pattern exposure method continues synthesis on a photosensitive substrate, wherein, comprising: a width of the scanning direction set by the illumination field stop on the image of the pattern of the photosensitive substrate; a first light-shielding plate is provided to the optical path overlaps with the field stop, to set the width of the pattern of the image orthogonal to the scanning direction; and a direction orthogonal to the movable direction of the scanning pattern image, capable of irradiating the overlap area of ​​the continuous light amount attenuation to the peripheral region of the second light-shielding plate is irradiated with the continued engagement of the exposed area of ​​the second light shielding plate setting position.
9.如权利要求8所述的曝光方法,其特征为,在该掩模的图案区域的相当于上述继续曝光区域的近傍,设有对合上述第二遮光板的位置的位置对合标记,利用该位置对合标记与第二遮光板的位置对合,以调整该第二遮光板的位置。 9. The exposure method according to claim 8, wherein, in the pattern region of the mask corresponds to the vicinity of the region is continuously exposed, with the position of engagement of the second light-shielding plate is bonded to the marker, with this position of the label with the position of the second light-shielding plate for engagement to adjust the position of the second light-shielding plate.
10.如权利要求9所述的曝光方法,其特征为,在该感光基板的图案区域的相当于上述继续曝区域的近傍,设有基板位置对合标记,在进行曝光时,使该基板对合标记与上述掩模的位置对合标记对合。 10. The exposure method according to claim 9, wherein, in the above-described corresponding to the vicinity of the exposed region continues pattern area of ​​the photosensitive substrate, the substrate is provided with engagement position mark, exposure is performed so that the pair of substrates the position of the label with the engagement of the mask mark apposition.
11.一种组件制造方法,用光束照射掩模并对该光束同步移动该掩模与玻璃基板进行扫描曝光的曝光装置,将该掩模的图案的一部份接合合成,制造较该掩模的连续图案区域更大的液晶显示组件的制造方法,其特征为:于该玻璃基板上对合掩模的图案的位置;于该掩模的图案的接合曝光区域上对合遮光板的位置,遮蔽该掩模的图案的一部份,并同步移动该掩模与该玻璃基板,以于该玻璃基板的所定区域上扫描曝光该掩模的图案;该曝光之后,将该玻璃基板向与扫描曝光方向直交的方向移动;在该玻璃基板的该所定区域与一部份重复的位置,设定欲与曝光的掩模图案合并照射曝光的照射区域,同时,对设于照射区域的一边的接合位置的掩模的图案,对合接合曝光的遮光板的位置并进行曝光。 11. A device manufacturing method, a mask is irradiated with a light beam scanning exposure apparatus and an exposure of the glass substrate and the mask move synchronously beam, a part of the mask pattern bonded synthetic manufacture than the mask larger liquid crystal display method of manufacturing a continuous pattern area of ​​the component, wherein: the glass substrate on the bonding position of the mask pattern; engagement position light shielding plate bonded on to the exposed area of ​​the mask pattern, masking a portion of the pattern of the mask, and the mask move synchronously with the glass substrate to a predetermined region on the glass substrate, the scanning exposure of the mask pattern; after the exposure, the glass substrate and the scan exposure direction perpendicular to the direction of movement; a portion overlapping with the predetermined area of ​​the glass substrate, set a region to be irradiated with the exposure irradiated combined mask pattern exposure, while the engagement of the shot areas disposed on one side pattern of the mask position, the position of the light shielding plate joined together and exposed exposed.
12.如权利要求11所述的组件制造方法,其特征为,该照射区域是由分割成多个的照射区域所构成的同时,该些分割成多个的照射区域为互相重复的合成的曝光的区域。 12. The method of manufacturing a component according to claim 11, wherein the irradiation area is divided into a plurality of simultaneously irradiated region constituted of the plurality of the irradiation region is divided into a plurality of exposure overlap and synthetic Area.
13.如权利要求12所述的组件制造方法,其特征为,对合接合曝光的遮光板的位置是设置于该些分割成多个的照射区域的其中任一的区域内。 13. The method of manufacturing a component according to claim 12, characterized in that the position of the light shielding plate is bonded to the joint exposure disposed within the plurality of shot areas divided into a plurality of regions of either.
14.一种组件制造方法,用光束照射掩模并对该光束同步移动该掩模与用于显示组件的感光基板进行扫描曝光的曝光装置,将该掩模的图案的一部份接合合成,制造较该掩模的连续图案区域更大的显示组件的制造方法,其特征为:于该玻璃基板上对合掩模的图案的位置;于该掩模的图案的接合曝光区域上对合遮光板的位置,遮蔽该掩模的图案的一部份,并同步移动该掩模与该玻璃基板,以于该玻璃基板的所定区域上扫描曝光该掩模的图案;该曝光之后,将该感光基板向与扫描曝光方向直交的方向移动;在该感光基板的该所定区域与一部份重复的位置,设定欲与曝光的掩模图案合并照射曝光的照射区域,同时,对设于照射区域的一边的接合位置的掩模的图案,对好接合曝光的遮光板的位置并进行曝光。 14. A device manufacturing method, a mask is irradiated with the light beams and synchronous movement of the mask and the photosensitive substrate for a display component is exposed to scanning exposure apparatus, a part of the mask pattern bonded synthesis, representing a continuous production method of the mask pattern region larger display component, wherein: the glass substrate on the bonding position of the mask pattern; bonded on the exposed region of the mask pattern in the light-shielding engagement position of the plate, a portion of the shielding pattern of the mask, and the mask move synchronously with the glass substrate to scan a predetermined region on the glass substrate, exposing the mask pattern; after the exposure, the photosensitive the substrate is moved in a direction perpendicular to the scanning direction of the exposure; overlapping with a portion in the region of the predetermined position of the photosensitive substrate, the exposure is set to be irradiated region irradiated combined mask pattern exposure, while, on the irradiation area provided in the pattern of the mask side of the engaged position, the position of the light shielding plate is good and exposed joint exposure.
15.如权利要求14所述的组件制造方法,其特征为,该照射区域是由分割成多个的照射区域所构成的同时,该些分割成多个的照射区域为互相重复的合成的曝光的区域。 15. The assembly manufacturing method according to claim 14, wherein the irradiation area is divided into a plurality of simultaneously irradiated region constituted of the plurality of the irradiation region is divided into a plurality of exposure overlap and synthetic Area.
16.如权利要求15所述的组件制造方法,其特征为,对合接合曝光的遮光板的位置是设置于该些分割成多个的照射区域的其中任一的区域内。 16. The assembly manufacturing method according to claim 15, characterized in that the position of the light shielding plate is bonded to the joint exposure disposed within the plurality of shot areas divided into a plurality of regions of either.
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