CN103969958B - A kind of many exposure field splicing system and method - Google Patents
A kind of many exposure field splicing system and method Download PDFInfo
- Publication number
- CN103969958B CN103969958B CN201310029993.0A CN201310029993A CN103969958B CN 103969958 B CN103969958 B CN 103969958B CN 201310029993 A CN201310029993 A CN 201310029993A CN 103969958 B CN103969958 B CN 103969958B
- Authority
- CN
- China
- Prior art keywords
- exposure
- field
- width
- fields
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005286 illumination Methods 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 13
- 230000000007 visual effect Effects 0.000 claims description 13
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a kind of many exposure field splicing system and method, comprising: mask, described mask is provided with the image varied in size; Multiple lighting unit, the image on mask described in described multiple illumination unit is to form multiple image-generating unit, and each image-generating unit comprises an exposure field; Substrate, is spliced to form splicing view field by multiple exposure field on substrate; Wherein, described exposure field comprises: exposure field PA, corresponding exposure field width PA, exposure field PB, corresponding exposure field width PB, exposure field PC, corresponding exposure field width PC, wherein, and PA & gt; PB & gt; PC, width PA=width PB=width PC.The joining method of exposure field has more dirigibility, according to the different demands of different product to the size of splicing view field, can select different joining methods, provide the splicing market of more splicing sizes.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a multi-exposure view field splicing system and method.
Background
In a semiconductor manufacturing process, a photolithography machine may enlarge the exposure size of a liquid crystal panel by increasing the field of view of a single optical system, or may use a plurality of small partial projection optical systems instead of a single large projection optical system.
In the prior art, the method of using a plurality of small local projection optical systems to replace a single large projection optical system can continuously increase the number of spliced view fields to meet the requirement of high-generation large-size panels, and can compensate the deformation of masks and substrates in different regions to improve the image quality, so that the method has obvious advantages and is widely applied.
The patent No. JPA2001337463 entitled "exposure device and method for manufacturing exposure device" discloses an exposure system, which uses a plurality of identical exposure subsystems for splicing, and the sizes of the exposure fields formed by the exposure subsystems are identical.
An exposure system is disclosed in US5579147, entitled "scanninggleightexposepreparatus", and a plurality of identical exposure subsystems are also used for splicing, and the sizes of the exposure fields formed by the exposure subsystems are identical.
In the prior art, the sizes of the exposure fields formed by the exposure subsystems are the same, and the splicing method is single and cannot be combined according to the use requirement.
Disclosure of Invention
The invention provides a multi-exposure view field splicing system and method, which solve the problem that on the premise of unchanging splicing quantity, the splicing method of exposure view fields with the same size is single and cannot be combined according to use requirements.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a multi-exposure field-of-view stitching system, comprising:
the mask is provided with images with different sizes;
a plurality of illumination units that illuminate an image on the mask to form a plurality of imaging units, each imaging unit including an exposure field of view;
the substrate is spliced with a plurality of exposure fields to form a spliced field; wherein,
the exposure field of view includes: an exposure view field PA corresponding to the exposure view field width PA, an exposure view field PB corresponding to the exposure view field width PB, an exposure view field PC corresponding to the exposure view field width PC, wherein the view field size relationship is PA > PB > PC; the field width relationship is width PA-width PB-width PC.
Optionally, the exposure field of view is a trapezoidal exposure field of view.
Optionally, in the multi-exposure view field stitching method, the number of the exposure view fields is N, where N is a natural number, N is greater than or equal to 5, and N is not a multiple of 4.
Optionally, in the multi-exposure field stitching method, the PA, PB, and PC satisfy PB ═ (PA + PC)/2.
Optionally, in the multi-exposure view field stitching method, when the number N of the exposure view fields is an odd number, the exposure view fields are stitched to form three different stitched view fields according to the following formula:
(N-1)/4*PA+(N+1)/2*PB+(N-1)/4*PC；
(N-1)/4*PA+(N-1)/2*PB+((N-1)/4+1)*PC；
((N-1)/4+1)*PA+(N-1)/2*PB+(N-1)/4*PC。
optionally, in the multi-exposure view field splicing method, when the number N of the exposure view fields is an even number, the exposure view fields are spliced to form two different spliced view fields according to the following formula:
(N/4+1/2)*PA+N/2*PB+(N/4-1/2)*PC；
(N/4-1/2)*PA+N/2*PB+(N/4+1/2)*PC。
meanwhile, the invention also provides a multi-exposure view field splicing method adopting the exposure view field splicing system, which comprises the following steps:
setting images with different sizes on the mask;
illuminating an image on the mask by a plurality of illumination units to form a plurality of imaging units, each imaging unit comprising an exposure field of view;
splicing the plurality of exposure fields on a substrate to form a spliced field; wherein,
the exposure field of view includes: the exposure view field PA corresponds to the exposure view field width PA, and the exposure view field PB corresponds to the exposure view field width PB, and the exposure view field PC corresponds to the exposure view field width PC, wherein, the view field size relationship is PA > PB > PC, and the view field width relationship is width PA ═ width PB ═ width PC.
Optionally, the exposure field of view is a trapezoidal exposure field of view.
Optionally, in the multi-exposure view field splicing method, the number of the exposure view fields is N, where N is a natural number, N is greater than or equal to 5, and N is not a multiple of 4.
Optionally, in the multi-exposure field stitching method, the PA, PB, and PC satisfy PB ═ (PA + PC)/2.
Optionally, in the multi-exposure view field splicing method, when the number N of the exposure view fields is an odd number, the exposure view fields are spliced to form three different spliced view fields according to the following formula:
(N-1)/4*PA+(N+1)/2*PB+(N-1)/4*PC；
(N-1)/4*PA+(N-1)/2*PB+((N-1)/4+1)*PC；
((N-1)/4+1)*PA+(N-1)/2*PB+(N-1)/4*PC。
optionally, in the multi-exposure view field splicing method, when the number N of the exposure view fields is an even number, the exposure view fields are spliced to form two different spliced view fields according to the following formula:
(N/4+1/2)*PA+N/2*PB+(N/4-1/2)*PC；
(N/4-1/2)*PA+N/2*PB+(N/4+1/2)*PC。
the implementation of the multi-exposure view field splicing system and the method has the following beneficial effects: the splicing method of the exposure view field is more flexible, different splicing methods can be selected according to different requirements of different products on the size of the splicing view field, and a splicing market with more splicing sizes is provided.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic structural diagram of a multi-exposure field stitching system according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an imaging unit and an exposure field of an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a multi-exposure field stitching method according to embodiment 1 of the present invention;
FIG. 4 is a schematic structural diagram of a multi-exposure field stitching method according to embodiment 2 of the present invention;
FIG. 5 is a schematic structural diagram of a multi-exposure field stitching method according to embodiment 3 of the present invention;
FIG. 6 is a schematic structural diagram of a multi-exposure field stitching method according to embodiment 4 of the present invention;
fig. 7 is a schematic structural diagram of a multi-exposure field stitching method according to embodiment 5 of the present invention.
Detailed Description
The following describes a multi-exposure field stitching system and method according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
As shown in fig. 1 and 2, a multi-exposure field stitching system includes:
the image processing device comprises a mask 1, wherein images with different sizes are arranged on the mask 1;
a plurality of illumination units 2, the plurality of illumination units 2 illuminating an image on the mask 1 to form a plurality of imaging units 3, each imaging unit 3 comprising an exposure field of view 5;
the substrate 4 is used for splicing the plurality of exposure fields 5 on the substrate to form a spliced field; wherein,
the exposure field of view 5 includes: an exposure view field PA corresponding to the exposure view field width PA, an exposure view field PB corresponding to the exposure view field width PB, an exposure view field PC corresponding to the exposure view field width PC, wherein the view field size relationship is PA > PB > PC; the field width relationship is width PA-width PB-width PC. The width of the exposure field is the width of the exposure field formed in the scanning plane along the direction perpendicular to the scanning direction of the lithography system, and the actual width or the average width of the exposure field can be taken.
Further, the exposure view field 5 is a trapezoid exposure view field, and the width of the exposure view field is the average width of the trapezoid exposure view field.
Further, the number of the exposure fields 5 is N, N is a natural number, N is greater than or equal to 5 and N is not a multiple of 4, and a combination of a plurality of fields cannot be formed even if the fields are different in size.
Further, to satisfy the field stitching condition, PA, PB, and PC, PB ═ (PA + PC)/2.
Meanwhile, the invention also provides a multi-exposure view field splicing method, which comprises the following steps:
setting images with different sizes on the mask;
illuminating an image on the mask by a plurality of illumination units to form a plurality of imaging units, each imaging unit comprising an exposure field of view;
splicing the plurality of exposure fields on a substrate to form a spliced field; wherein,
the exposure field of view includes: an exposure view field PA corresponding to the exposure view field width PA, an exposure view field PB corresponding to the exposure view field width PB, an exposure view field PC corresponding to the exposure view field width PC, wherein the view field size relationship is PA > PB > PC; the field width relationship is width PA-width PB-width PC.
Further, the number of the exposure fields is N, N is a natural number, N is greater than or equal to 5, and N is not a multiple of 4.
Further, the PA, PB, and PC satisfy PB ═ (PA + PC)/2.
[ example 1 ]
As shown in fig. 3, a multi-exposure field stitching method forms three exposure fields of different sizes PA, PB, and PC, where PA is 100mm, PB is 130mm, and PC is 160 mm.
When the number N of exposure fields is 5,
splice by 1 PA, 2 PB, 2 PC, the size of concatenation visual field: 1 PA +2 PB +2 PC-1-160 + 2-130 + 2-100-620 mm.
[ example 2 ]
As shown in fig. 4, a multi-exposure field stitching method forms three exposure fields of different sizes PA, PB, and PC, where PA is 100mm, PB is 130mm, and PC is 160 mm.
When the number N of exposure fields is 5,
splice by 1 PA, 3 PB, 1 PC, the size of concatenation visual field: 1 PA +3 PB +1 PC-1-160 + 3-130 + 1-100-650 mm.
[ example 3 ]
As shown in fig. 5, a multi-exposure field stitching method forms three exposure fields of different sizes PA, PB, and PC, where PA is 100mm, PB is 130mm, and PC is 160 mm.
When the number N of exposure fields is 5,
splice by 2 PA, 2 PB, 1 PC, the size of concatenation visual field: 2 PA +2 PB +1 PC 2 +2 130+1 100 680 mm.
As can be seen from [ example 1 ], [ example 2 ], and [ example 3 ], when the number N of the exposure fields is odd, the exposure fields are stitched to form three different stitched fields according to the following formula:
(N-1)/4*PA+(N+1)/2*PB+(N-1)/4*PC；
(N-1)/4*PA+(N-1)/2*PB+((N-1)/4+1)*PC；
((N-1)/4+1)*PA+(N-1)/2*PB+(N-1)/4*PC。
[ example 4 ]
As shown in fig. 6, a multi-exposure field stitching method forms three exposure fields of different sizes PA, PB, and PC, where PA is 100mm, PB is 130mm, and PC is 160 mm.
When the number N of exposure fields is 6,
splice by 1 PA, 3 PB, 2 PCs, the size of concatenation visual field: 1 PA +3 PB +2 PC ═ 1 × 160+3 × 130+2 × 100 ═ 810 mm.
[ example 5 ]
As shown in fig. 7, a multi-exposure field stitching method forms three exposure fields of different sizes PA, PB, and PC, where PA is 100mm, PB is 130mm, and PC is 160 mm.
When the number N of exposure fields is 6,
splice by 2 PA, 3 PB, 1 PC, the size of concatenation visual field is: 2 PA +3 PB +1 PC 2 160+3 130+1 100 750 mm.
From [ example 4 ] and [ example 5 ], it can be concluded that when the number N of the exposure fields is an even number and N is not a multiple of 4, the exposure fields are spliced to form two different spliced fields according to the following formula:
(N/4+1/2)*PA+N/2*PB+(N/4-1/2)*PC；
(N/4-1/2)*PA+N/2*PB+(N/4+1/2)*PC。
through the structure, the exposure fields with different sizes are spliced, and the spliced fields with different sizes can be realized, the splicing of 5 or 6 exposure fields is only exemplified in the invention, but the application range of the invention is not limited to the specific number of the exposure fields.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (12)
1. A multi-exposure field stitching system, comprising:
the mask is provided with images with different sizes;
a plurality of illumination units that illuminate an image on the mask to form a plurality of imaging units, each imaging unit including an exposure field of view;
the substrate is spliced with a plurality of exposure fields to form a spliced field; wherein,
the exposure field of view includes: an exposure view field PA corresponding to an exposure view field width PA, an exposure view field PB corresponding to an exposure view field width PB, an exposure view field PC corresponding to an exposure view field width PC, wherein the view field size relationship is PA > PB > PB; the field width relationship is width PA-width PB-width PC.
2. The multi-exposure field stitching system according to claim 1, wherein the exposure fields are trapezoidal exposure fields.
3. The multi-exposure field stitching system according to claim 1, wherein the number of the exposure fields is N, N is a natural number, N is greater than or equal to 5, and N is not a multiple of 4.
4. The multi-exposure field-of-view stitching system according to claim 3, wherein the PA, PB and PC satisfy PB ═ (PA + PC)/2.
5. The multi-exposure view splicing system according to claim 4, wherein when the number N of the exposure views is an odd number, the exposure views are spliced to form three different spliced views according to the following formula:
(N-1)/4*PA+(N+1)/2*PB+(N-1)/4*PC；
(N-1)/4*PA+(N-1)/2*PB+((N-1)/4+1)*PC；
((N-1)/4+1)*PA+(N-1)/2*PB+(N-1)/4*PC。
6. the multi-exposure view splicing system according to claim 4, wherein when the number N of the exposure views is even, the exposure views are spliced to form two different spliced views according to the following formula:
(N/4+1/2)*PA+N/2*PB+(N/4-1/2)*PC；
(N/4-1/2)*PA+N/2*PB+(N/4+1/2)*PC。
7. a multi-exposure field stitching method using the multi-exposure field stitching system according to claim 1, comprising:
setting images with different sizes on the mask;
illuminating an image on the mask by a plurality of illumination units to form a plurality of imaging units, each imaging unit comprising an exposure field of view;
splicing the plurality of exposure fields on a substrate to form a spliced field; wherein,
the exposure field of view includes: the exposure visual field PA corresponds exposure visual field width PA, and exposure visual field PB corresponds exposure visual field width PB, and exposure visual field PC corresponds exposure visual field width PC, and wherein, visual field size relation is PA > PB > PC, and the visual field width relation is width PA ═ width PB ═ width PC.
8. The method for stitching multiple exposure fields according to claim 7, wherein the exposure fields are trapezoidal exposure fields.
9. The method for stitching multiple exposure fields according to claim 7, wherein the number of the exposure fields is N, N is a natural number, N is greater than or equal to 5, and N is not a multiple of 4.
10. The multi-exposure field stitching method according to claim 9, wherein PA, PB, and PC satisfy PB ═ (PA + PC)/2.
11. The method for splicing multiple exposure fields according to claim 10, wherein when the number N of the exposure fields is odd, the exposure fields are spliced to form three different spliced fields according to the following formula:
(N-1)/4*PA+(N+1)/2*PB+(N-1)/4*PC；
(N-1)/4*PA+(N-1)/2*PB+((N-1)/4+1)*PC；
((N-1)/4+1)*PA+(N-1)/2*PB+(N-1)/4*PC。
12. the method for splicing multiple exposure fields according to claim 10, wherein when the number N of the exposure fields is even, the exposure fields are spliced to form two different spliced fields according to the following formula:
(N/4+1/2)*PA+N/2*PB+(N/4-1/2)*PC；
(N/4-1/2)*PA+N/2*PB+(N/4+1/2)*PC。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310029993.0A CN103969958B (en) | 2013-01-25 | 2013-01-25 | A kind of many exposure field splicing system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310029993.0A CN103969958B (en) | 2013-01-25 | 2013-01-25 | A kind of many exposure field splicing system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103969958A CN103969958A (en) | 2014-08-06 |
| CN103969958B true CN103969958B (en) | 2016-03-30 |
Family
ID=51239625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310029993.0A Active CN103969958B (en) | 2013-01-25 | 2013-01-25 | A kind of many exposure field splicing system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103969958B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106227002B (en) * | 2016-09-21 | 2018-01-23 | 中山新诺科技股份有限公司 | A kind of method for the efficiency for improving adjustment splicing and multiplying power size |
| CN113835308A (en) * | 2021-09-23 | 2021-12-24 | 上海度宁科技有限公司 | Splicing exposure method, device and system |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5579147A (en) * | 1993-12-08 | 1996-11-26 | Nikon Corporation | Scanning light exposure apparatus |
| US5912726A (en) * | 1994-10-28 | 1999-06-15 | Nikon Corporation | Projection exposure apparatus and method having a positional deviation detection system that employs light from an exposure illumination system |
| JP3316760B2 (en) * | 2001-05-17 | 2002-08-19 | 株式会社ニコン | Scanning exposure method |
| TW520526B (en) * | 2000-05-22 | 2003-02-11 | Nikon Corp | Exposure apparatus, method for manufacturing thereof, method for exposing and method for manufacturing micro-device |
| WO2008065977A1 (en) * | 2006-11-27 | 2008-06-05 | Nikon Corporation | Exposure method, pattern forming method, exposure device, and device manufacturing method |
| CN101294804A (en) * | 2008-06-20 | 2008-10-29 | 北京大学 | Digital airborne photography system |
| CN100524024C (en) * | 2002-05-22 | 2009-08-05 | 尼康株式会社 | Exposure method, exposure apparatus and element mfg. method |
| CN101611352A (en) * | 2007-01-04 | 2009-12-23 | 株式会社尼康 | Projecting optical device, exposure method and device manufacturing method |
| CN101644884A (en) * | 2009-07-13 | 2010-02-10 | 浙江大学 | Splicing view field stereoscopic three-dimensional display device and method thereof |
| CN101918897A (en) * | 2007-12-20 | 2010-12-15 | 株式会社尼康 | Exposure method, exposure apparatus, and method for producing device |
| CN102821238A (en) * | 2012-03-19 | 2012-12-12 | 北京泰邦天地科技有限公司 | Wide-field ultra-high-resolution imaging system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729331A (en) * | 1993-06-30 | 1998-03-17 | Nikon Corporation | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
-
2013
- 2013-01-25 CN CN201310029993.0A patent/CN103969958B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5579147A (en) * | 1993-12-08 | 1996-11-26 | Nikon Corporation | Scanning light exposure apparatus |
| US5912726A (en) * | 1994-10-28 | 1999-06-15 | Nikon Corporation | Projection exposure apparatus and method having a positional deviation detection system that employs light from an exposure illumination system |
| TW520526B (en) * | 2000-05-22 | 2003-02-11 | Nikon Corp | Exposure apparatus, method for manufacturing thereof, method for exposing and method for manufacturing micro-device |
| JP3316760B2 (en) * | 2001-05-17 | 2002-08-19 | 株式会社ニコン | Scanning exposure method |
| CN100524024C (en) * | 2002-05-22 | 2009-08-05 | 尼康株式会社 | Exposure method, exposure apparatus and element mfg. method |
| WO2008065977A1 (en) * | 2006-11-27 | 2008-06-05 | Nikon Corporation | Exposure method, pattern forming method, exposure device, and device manufacturing method |
| CN101611352A (en) * | 2007-01-04 | 2009-12-23 | 株式会社尼康 | Projecting optical device, exposure method and device manufacturing method |
| CN101918897A (en) * | 2007-12-20 | 2010-12-15 | 株式会社尼康 | Exposure method, exposure apparatus, and method for producing device |
| CN101294804A (en) * | 2008-06-20 | 2008-10-29 | 北京大学 | Digital airborne photography system |
| CN101644884A (en) * | 2009-07-13 | 2010-02-10 | 浙江大学 | Splicing view field stereoscopic three-dimensional display device and method thereof |
| CN102821238A (en) * | 2012-03-19 | 2012-12-12 | 北京泰邦天地科技有限公司 | Wide-field ultra-high-resolution imaging system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103969958A (en) | 2014-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW560185B (en) | Seamless tiled display system | |
| AU2011354523B2 (en) | Curved surface display device | |
| US10473826B2 (en) | Display panel and display apparatus thereof | |
| JP5294488B2 (en) | Exposure equipment | |
| WO2019075809A1 (en) | Backplane for flexible display panel and flexible display device | |
| WO2012034995A3 (en) | Imaging optical system | |
| US20140057082A1 (en) | Mask Plate, Method For Fabricating Array Substrate Using The Same, And Array Substrate | |
| US11071994B2 (en) | Cleaning device for nozzle | |
| WO2014134886A1 (en) | Color filter substrate, manufacturing method therefor, and liquid crystal display screen | |
| CN107577070B (en) | Obtain the method and defects of liquid crystal display panel positioning device of defects of liquid crystal display panel position | |
| TW200942978A (en) | Exposure method, exposure apparatus, and method for producing device | |
| CN102595845A (en) | Printed circuit board component fixing mechanism and liquid crystal displayer thereof | |
| CN103969958B (en) | A kind of many exposure field splicing system and method | |
| JP2010278071A (en) | Led substrate, method of manufacturing the led substrate, backlight device, and display device | |
| JP2009168935A (en) | Photomask to be used for exposure | |
| WO2020124748A1 (en) | Display panel and display apparatus | |
| US10345696B2 (en) | Photomask for optical alignment and optical alignment method | |
| WO2019127734A1 (en) | Liquid crystal display and backlight module thereof | |
| CN105088142A (en) | Evaporation plating method | |
| JP2006033672A5 (en) | ||
| KR101947936B1 (en) | Array substrate and liquid crystal display device | |
| TW200834258A (en) | Projection optical apparatus, exposure method and apparatus, and device manufacturing method | |
| CN105093613B (en) | Backlight module and display device | |
| CN105824181A (en) | Screen and multi-screen system | |
| CN104503170A (en) | Array substrate and liquid crystal display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |