CN101611352A - Projecting optical device, exposure method and device manufacturing method - Google Patents

Projecting optical device, exposure method and device manufacturing method Download PDF

Info

Publication number
CN101611352A
CN101611352A CNA2007800492610A CN200780049261A CN101611352A CN 101611352 A CN101611352 A CN 101611352A CN A2007800492610 A CNA2007800492610 A CN A2007800492610A CN 200780049261 A CN200780049261 A CN 200780049261A CN 101611352 A CN101611352 A CN 101611352A
Authority
CN
China
Prior art keywords
optical system
projection optical
projection
image
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007800492610A
Other languages
Chinese (zh)
Other versions
CN101611352B (en
Inventor
熊泽雅人
登道男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/987,779 external-priority patent/US20080165333A1/en
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN101611352A publication Critical patent/CN101611352A/en
Application granted granted Critical
Publication of CN101611352B publication Critical patent/CN101611352B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

When utilizing a plurality of projection optical systems on object, to form the enlarged image of mask pattern, make the minimized in size of mask pattern.Projection aligner makes mask (MA) and substrate (PT) relatively move and form the enlarged image of the pattern of mask (MA).This device comprise projection optical system (PL1, PL2), the image that it has the enlargement ratio of expansion respectively and go up to form the pattern of mask (MA) in described substrate (PT).By connecting the projection optical system (PL1 on the mask (MA), PL2) visual field point (a, b) first line segment that forms and conjugate points (A by being connected the visual field point in the substrate (PT), B) second line segment that forms has formed the corresponding limit of two similar fitgures, and the magnification ratio of described two similar fitgures is described enlargement ratios.

Description

Projecting optical device, exposure method and device manufacturing method
Technical field
The enlarged image that the present invention relates to be used for such as mask grade in an imperial examination one object is formed on such as the projecting optical device on second objects such as sensitization substrate, and relates to the equipment manufacturing technology of exposure technique and this projecting optical device of use.
Background technology
When making such as equipment such as semiconductor element equipment and liquid crystal displays; can use projection aligner, described projection aligner use projection optical system with the graphic pattern projection of mask (such as reticle mask or photomask) to the substrate that is coated with resist (such as glass plate or semiconductor wafer).Use the projection aligner (stepping exposure machine) of step-scan mode to be extensive use of in the prior art.Step-scan formula projection aligner exposes mask pattern to a plurality of irradiated regions that are defined on the plate in the lump.Proposed such step-scan formula scanning projection exposure device in recent years, described step-scan formula scanning projection exposure device uses a plurality of small-sized partial projection optical systems with identical enlargement ratio to replace single large-scale projection optical system.In this scanning projection exposure device, a plurality of partial projection optical systems are provided at predetermined intervals along the direction of scanning and are multiple row.When mask and substrate are scanned, the scanning projection exposure device by use the partial projection optical system with the mask pattern exposure in substrate.
A kind of step-scan formula projection aligner that has proposed uses the partial projection optical system with the enlargement ratio that dwindles in substrate mask pattern to be projected into the array with similar shape, and the magnification ratio of described similar shape is the enlargement ratio that dwindles (such as reference patent documentation 1) of indicative of local optical system.In traditional scanning projection exposure device, a plurality of partial projection optical systems are respectively arranged with the reflected refraction system that forms intermediate image, and described reflected refraction system comprises concave mirror (or being mirror simply) and lens and other reflected refraction system.Each partial projection optical system forms the upright image of mask pattern with the enlargement ratio that equates or dwindle on substrate.
In recent years, the employed substrate maximization that become, and also size can be as big as 2 square metres substrate and obtains just day by day using.When use comprised that the above-mentioned step-scan formula exposure device of the partial projection optical system that enlargement ratio is equal or dwindle to implement exposure on this large-scale substrate, mask also will maximize.Become big mask owing to need keep the flatness of mask substrate and because the complicated manufacturing process more of the certainty that becomes causes cost to uprise when mask maximizes.In addition, need four to five layers mask to form thin film transistor (TFT) portion usually such as liquid crystal display.This has further increased cost.Therefore, proposed to reduce the scanning projection exposure device (such as reference patent documentation 2) of mask size.This scanning projection exposure device uses multiple lens system, and described multiple lens system comprises a plurality of partial projection optical systems with enlargement ratio of expansion.
Patent documentation 1: the open No.825491 of european patent application
Patent documentation 2: U.S. Patent No. 6,512,573
Summary of the invention
At enlargement ratio and use in the multiple lens system of traditional scanning projection exposure device with expansion, optical axis in each indicative of local optical system on the mask and suprabasil optical axis be positioned along with the same position of the non-direction of scanning of direction of scanning quadrature.Further, utilize mask side figure that the point on the optical axis in the area of visual field on the mask of a plurality of partial projection optical systems forms to equal the base side figure that forms by the point that connects the some conjugation on suprabasil and the optical axis length along the length of non-direction of scanning by connection along non-direction of scanning.
Therefore, for the expanded view with mask looks like to project in the substrate, the area of the pattern corresponding to a plurality of partial projection optical systems on the mask must be spaced a predetermined interval apart from each other along non-direction of scanning.Further, even form the upright image of mask in substrate, mask along the width of non-direction of scanning and the width before it about equally.So the manufacturing cost of mask is not effectively lowered.
Therefore, the purpose of this invention is to provide a kind of shadow casting technique, a kind of exposure technique and a kind of equipment manufacturing technology that uses this shadow casting technique, when utilizing a plurality of projection optical systems (partial projection system) to form the enlarged image of mask pattern on such as objects such as substrates, these technology can make the further miniaturization of mask pattern.
In first projecting optical device according to the present invention, obtain second line segment on second object by amplify first line segment on first object with the enlargement ratio that enlarges.Therefore, directly formed image on second object by amplify image that the pattern on first object forms with the enlargement ratio that enlarges, and the pattern on first object can form continuously along non-direction of scanning with the direction of scanning quadrature.Therefore, in the pattern on first object (mask etc.), do not need to be provided at the zone that does not have pattern on the non-direction of scanning.Further, the size of pattern can minimize, and can reduce the continuity error of the image that projects on second object.
In second projecting optical device according to the present invention, use the enlargement ratio that equates as magnification ratio, be similar thereby make the figure of winning with second graph.Area of visual field of a plurality of projection optical systems (viewing area) and image-region are continuous on the direction that intersects with the direction of scanning.Therefore, the pattern on first object can minimize dimensionally, and the pattern on first object can all be sent on second object by the single sweep operation exposure, and the throughput of step of exposure is improved.
In projection aligner of the present invention and exposure method, projecting optical device of the present invention is used for implementing scan exposure, so that make the image exposure of the pattern on first object that amplifies with the enlargement ratio that enlarges.This can reduce the size of the pattern on the object of winning, and makes the saddle that is used for first object be able to miniaturization.
In further projection aligner of the present invention and exposure method, can form pattern continuously in non-direction of scanning, the first object upper edge.This can all be reduced the size of the pattern on the object of winning, and has reduced the continuity error of projected image and made the saddle that is used for first object be able to miniaturization.
Description of drawings
Fig. 1 is the schematic perspective view that illustrates according to the structure of the projection aligner of first embodiment;
Fig. 2 illustrates the field of illumination ILF1 to ILF5 of Fig. 1 and the diagram of the relation of the EF1 to EF5 of view field;
Fig. 3 is the diagram of the position relation of the mask MA of Fig. 1 when being illustrated in scan exposure and beginning and substrate PT;
Fig. 4 is the diagram that the position relation of the mask MA of Fig. 1 during the scan exposure and substrate PT is shown;
Fig. 5 is the diagram that first example of the projection optical system PL1 of Fig. 1 and PL2 is shown;
Fig. 6 is the diagram that second example of the projection optical system PL1 of Fig. 1 and PL2 is shown;
Fig. 7 is the diagram that is illustrated in the relation of area of visual field and image-region in the 3rd example of projection optical system PL1 to PL5 of Fig. 1;
Fig. 8 is the stereographic map that is illustrated in beam Propagation member in the 3rd example of projection optical system PL1 to PL5 of Fig. 1;
Fig. 9 is that the amplification of second graph of the first figure conjugation with on the area of visual field that illustrates on the image-region is centrally located in the diagram of the example in first figure;
Figure 10 is that the amplification of second graph of the first figure conjugation with on the area of visual field that illustrates on the image-region is centrally located in the synoptic diagram of the example in first figure;
Figure 11 (A) is that the amplification of second graph of the first figure conjugation with on the area of visual field that illustrates on the image-region is centrally located in the diagram of example of the outside of first figure; And Figure 11 (B) is the diagram that the layout of projection optical system PL1 and PL2 in this example is shown;
Figure 12 be illustrate on the image-region with area of visual field on the diagram of another example at amplification center of second graph of the first figure conjugation;
Figure 13 (A) is the schematic perspective view that illustrates according to the structure of the projection aligner of second embodiment, and Figure 13 (B) is the diagram of layout that the projection optical system PL1 to PL3 of Figure 13 (A) is shown;
Figure 14 (A) is the diagram that is illustrated in second embodiment initial layout of mask MA and substrate PT when implementing scan exposure for the first time, Figure 14 (B) is the diagram that the final layout of mask MA and substrate PT when for the first time implementing scan exposure is shown, Figure 14 (C) is the diagram that is illustrated in the initial layout of mask MA and substrate PT when for the second time implementing scan exposure, and Figure 14 (D) is the diagram that the final layout of mask MA and substrate PT when implementing scan exposure for the second time is shown;
Figure 15 is the stereographic map that illustrates according to another example of the projection optical system PL2 of second embodiment;
Figure 16 is the diagram that illustrates according to another example of the projection optical system PL1 of second embodiment;
Figure 17 is the stereographic map that illustrates according to another example of the projection optical system PL1 of second embodiment;
Figure 18 illustrates the diagram that first figure and second graph are in the example of mirror reflection relation, and described first figure forms by the point that connects on the mask MA, and described second pattern forms by the conjugate points that connects on the substrate PT; And
Figure 19 illustrates the process flow diagram of example of making the program of liquid crystal display according to the projection aligner of embodiment by using.
Description of reference numerals
The MA mask
PL, the PLS projecting optical device
The PT substrate
The IU lighting unit
PL1 to PL5 projection optical system
OF1 to OF5 area of visual field
ILF1 to ILF5 field of illumination
IF1 to IF5 image-region
EF1 to EF5 view field
12A to 12E beam Propagation member
DM1 and DM3 reach He Jing
13A to 16A mirror
17 amplification centers
Embodiment
First embodiment
Below with reference to Fig. 1 to 12 first embodiment of the present invention is described.
Fig. 1 shows the schematic structure according to the scanning projection exposure device of the use step-scan mode of first embodiment of the invention.In Fig. 1, projection aligner comprises lighting unit IU, mask saddle MSTG, projection optical system PL, substrate saddle PSTG, driving mechanism (not shown) and control module (not shown).Lighting unit IU illuminates the pattern of mask MA (first object) by the illumination light that penetrates from light source.Mask saddle MSTG keeps and mobile mask MA.Projection optical system PL is projected in the enlarged image of the pattern of mask MA on substrate (plate) PT (second object).Substrate saddle PSTG keeps and mobile substrate PT.Driving mechanism comprises such as the linear motor that is used to drive mask saddle MSTG and substrate saddle PSTG.Control module is in the operation of central controlling and driving mechanism etc.The substrate PT of present embodiment can be such as the rectangular planar glass plate, and its sideline or cornerwise length are greater than 500mm.Substrate PT can be coated with and apply the photoresist (photosensitive material) that is used to make such as liquid crystal display.The circular semiconductor wafers that is used to make the ceramic bases of thin-film head or is used to make semiconductor equipment can be used as substrate PT.
In the lighting unit IU shown in Fig. 1, the light beam that penetrates from the light source (not shown) such as ultrahigh pressure mercury lamp is reflected by oval shape mirror 2 and dichroic mirror 3, then enters collimation lens 4.The reflectance coating of the reflectance coating of oval shape mirror 2 and dichroic mirror 3 optionally reflects the light with certain wavelength coverage, perhaps particularly reflects the light that comprises g line (wavelength is 436nm), h line (wavelength is 405nm) and i line (wavelength is 365nm).As a result, the light that comprises g line, h line and i line enters collimation lens 4.Light source is arranged on the place, first focal position of oval shape mirror 2.Therefore, comprise the second focal position place formation light source image of the light of g line, h line and i line at oval shape mirror 2.The divergent beams of the light source image that the place, second focal position of next comfortable oval shape mirror 2 forms change parallel beam into by collimation lens 4, then this parallel beam passes wavelength and selects optical filtering 5, and described wavelength selects optical filtering 5 only to allow the light beam in the predetermined exposure wavelength coverage to pass.
Pass wavelength and selected the illumination light of optical filtering 5 to pass neutral density filters 6, gathered the light entrance 8a of optical fiber unit 8 then by collector lens 7.Optical fiber unit 8 can be such as by making up the unit of guide fiber at random that a plurality of fibers form at random.Optical fiber unit 8 has light entrance 8a and five light exits (hereinafter referred to as light exit 8b, 8c, 8d, 8e and 8f).The illumination light that enters optical fiber unit 8 by light entrance 8a is propagated in optical fiber unit 8, penetrates respectively from five light exit 8b to 8f then.The light that penetrates from five light exit 8b to 8f enters five local lighting optical systems (hereinafter referred to as local lighting optical system IL1, IL2, IL3, IL4 and IL5), its each all partly illuminate mask MA.
The illumination light of each ejaculation from the light exit 8b to 8f of optical fiber unit 8 enters among the corresponding local lighting optical system IL1 to IL5, and changes parallel beam into by near each the collimation lens that is arranged among the light exit 8b to 8f.This directional light enters fly eye lens array then, and described fly eye lens array is an optical integrator.The illumination light of coming a plurality of secondary souces of forming on the rear focal plane of fly eye lens array of comfortable local lighting optical system IL1 to IL5 via collector lens with roughly uniformly mode illuminate field of illumination ILF1, ILF2, ILF3, ILF4 and ILF5 on the mask MA.Lighting unit IU is by comprising that the above-mentioned optics of light source to local lighting optical system IL1 to IL5 forms.
The light of the field of illumination ILF1 to ILF5 that forms on the next comfortable mask MA makes the EF1 of view field, EF2, EF3, EF4 and EF5 (with reference to Fig. 2) exposure that forms on substrate PT via the first, second, third, fourth and the 5th projection optical system PL1, PL2, PL3, PL4 and PL5.First to the 5th projection optical system PL1 to PL5 is the telecentric optical system of mask side and base side.In the present embodiment, projecting optical device PL is formed by five projection optical systems (partial projection optical system) PL1 to PL5.Projection optical system PL1 to PL5 goes up the upright image of amplification (being that level and the vertical big multiplying power of traverse are positive enlarged image) that forms pattern with the homolographic projection area E F1 to EF5 of enlargement ratio β on the surface that is formed at substrate PT (second surface) that enlarges respectively, described pattern is included among the homolographic projection area E F1 to EF5 that is formed on the mask MA (first surface), and the enlargement ratio β of described expansion is common for all projection optical system PL1 to PL5.The enlargement ratio β that enlarges can be such as 1.5 * or bigger, such as can be 2.5 *.Preferably the enlargement ratio β of the expansion of partial projection optical system PL1 to PL5 be 1.5 * or bigger.
In the present embodiment, the surface of mask MA is installed on it and it goes up the surperficial parallel to each other of installation substrate PT.Hereinafter, the X-axle is defined as in the plane of the installation surface that is parallel to substrate PT that the direction of scanning SD of mask MA and substrate PT extends during the scan exposure, the Y-axle is defined as in the plane of the installation surface that is parallel to substrate PT along extending with the non-direction of scanning of direction of scanning quadrature, and the Z-axle then is defined as along the direction perpendicular to the installation surface of substrate PT and extends.In this case, the direction of scanning of mask MA and substrate PT is the direction (X-direction) along the X-axle.The non-direction of scanning of mask MA and substrate PT is the direction (Y-direction) along the Y-axle.
In Fig. 1, by absorption mask MA is remained on the mask saddle MSTG via mask keeper (not shown).On mask saddle MSTG, be fixed with removable mirror 5OX of X-axle and the removable mirror 5OY of Y-axle.First laser interferometer (not shown) is set to towards X-axle and removable mirror 5OX of Y-axle and 5OY.First laser interferometer is measured the position of mask saddle MSTG, and measurement result is offered saddle driver element (not shown).Substrate PT is remained on the substrate saddle PSTG by absorption via substrate keeper (not shown).On substrate saddle PSTG, be fixed with removable mirror 51X of X-axle and the removable mirror 51Y of Y-axle.Second laser interferometer (not shown) is set to towards removable mirror 51X of X-axle and the removable mirror 51Y of Y-axle.Second laser interferometer is measured the position of substrate saddle PSTG, and measurement result is offered saddle driver element (not shown).The saddle driver element is controlled position and the translational speed of mask saddle MSTG and substrate saddle PSTG based on the measured value of first laser interferometer and second laser interferometer.During the scan exposure, substrate saddle PSTG is activated with speed β * VM (wherein β is the enlargement ratio of projection optical system PL1 to PL5) with the mode edge+X-direction synchronous with mask saddle MSTG (or-X-direction), described mask saddle MSTG edge+X-direction (or-the X-direction) be activated with speed VM.
Above-mentioned local lighting optical system IL1, IL3 and IL5 are provided with along Y-direction (non-direction of scanning) with predetermined space, thereby form first row.In the same way, projection optical system PL1, PL3 corresponding with local lighting optical system IL1, IL3 and IL5 and PL5 also are provided with along the Y-direction in the predetermined set mode, thereby form first row.Local lighting optical system IL2 and IL4 are set to secondary series with predetermined space along the Y-direction.Local lighting optical system IL2 and IL4 in the secondary series are positioned) be listed as the position that edge+X-direction is shifted from first.Projection optical system PL2 and the PL4 corresponding with local lighting optical system IL2 and IL4 also are provided with along the Y-direction with predetermined space in the same way.Projection optical system PL2 and PL4 are positioned at the position with respect to the first row edge+X-direction displacement.
Between the first row projection optical system and secondary series projection optical system, be provided with survey sensor retaining member 52.Survey sensor retaining member 52 is provided with off-axis alignment unit and automatic focus unit.The off-axis alignment unit is aimed at substrate PT.The automatic focus unit is measured the Z-direction position (focal position) of mask MA and substrate PT.In the same way, on mask MA, also be provided with the aligned units (not shown) that is used to make the mask MA aligning.These aligned units are used for making mask MA and substrate PT to aim at, thereby implement exposure with overlap mode on substrate PT.Based on the measurement result of automatic focus unit, Z-is used for adjusting Z-direction position such as mask saddle MSTG to driving mechanism (not shown), thereby the imaging surface of projection optical system PL1 to PL5 is focused on.
Describe structure below in detail according to the projection optical system PL1 to PL5 of present embodiment.Fig. 2 illustrates the field of illumination ILF1 to ILF5 of conjugation and the planimetric map of the relation between the EF1 to EF5 of view field each other with respect to the projection optical system PL1 to PL5 shown in Fig. 1.Fig. 3 and 4 shows the position relation between the mask MA and substrate PT during the scan exposure.
In Fig. 2, the field of illumination ILF1 to ILF5 on the mask MA is set among area of visual field OF1, OF2, OF3, OF4 and the OF5 of projection optical system PL1 to PL5.The point (with reference to Fig. 3 and 4) that is included in the area of visual field and is positioned on optical axis AX11, AX21, AX31, AX41 and the AX51 is called an a, b, c, d and e.Further, the EF1 to EF5 of view field on the substrate PT is set among image-region IF1, IF2, IF3, IF4 and the IF5 of projection optical system PL1 to PL5.The point (with reference to Fig. 3 and 4) that is included in the image-region and is positioned on optical axis AX13, AX23, AX33, AX43 and the AX53 is called an A, B, C, D and E.In the present embodiment, the some a to e on the mask MA also is the point that is included among the ILF1 to ILF5 of field of illumination.With respect to the some A to E on the substrate PT of projection optical system PL1 to PL5 and some a to e conjugation also is the point that is included among the EF1 to EF5 of view field.
Being included in the first, the 3rd and the 5th projection optical system PL1, PL3 in first row and field of illumination ILF1, the ILF3 of PL5 and some a, c among the ILF5 and e (being positioned at the point on the optical axis) is arranged on the straight line that is parallel to non-direction of scanning (Y-direction).The straight line parallel that links the field of illumination ILF2 be included in second in the secondary series and the 4th projection optical system PL2 and PL4 and some b among the ILF4 and d (being positioned at the point on the optical axis) is provided with the straight line of an a, c and e and thereon away from the straight line preset distance that is provided with an a, c and e on it.Field of illumination ILF1, ILF3 in first row and ILF5 are roughly the same trapezoidal respectively, and described trapezoidal both sides along the Y-direction are trapezoidal hypotenuses (yet the field of illumination ILF1 and the ILF5 that are arranged on the place, two ends have the outside that is parallel to the X-axle respectively).It is trapezoidal by what field of illumination ILF3 Rotate 180 degree was obtained that field of illumination ILF2 in the secondary series and ILF4 are respectively.The projection optical system PL1 to PL5 of present embodiment forms upright image with the enlargement ratio β that enlarges respectively.Therefore, the EF1 to EF5 of view field is by amplifying trapezoidal that corresponding field of illumination ILF1 to ILF5 obtains with the enlargement ratio β that enlarges.
Being the first trapezoidal figure abdec forms by five some a to e that link on the mask MA.Be trapezoidal second graph ABDEC by concatenating group at the bottom of five points going up with some a to e conjugation of PT form.In the present embodiment, second graph ABDEC is the similar fitgures of the upright image of the first figure abdec.Second graph ABDEC equals the enlargement ratio β of the expansion of projection optical system PL1 to PL5 with respect to the enlargement ratio of the first figure abdec.Further, in the present embodiment, projection optical system PL1 to PL5 is parallel to the Z-axle at the optical axis AX11 to AX15 of mask MA side.Optical axis AX13 to AX53 on the substrate PT is perpendicular to the Z-axle.Therefore, as second graph ABDEC and when similar to the first figure abdec by using with respect to the enlargement ratio β of the expansion of the first figure abdec, at least four needs among five projection optical system PL1 to PL5 comprise the beam Propagation member, are sent to point in the respective projection zone that is included on the substrate PT at least along the predetermined at least shift amount (conveying capacity) of Y-direction (non-direction of scanning) displacement and with light beam so that come from the light beam of the point (visual field point) in the corresponding field of illumination that is included on the mask MA.In the present embodiment, the some C on the substrate PT is shifted from the some c edge-X-direction on the mask MA.Therefore, corresponding the 3rd projection optical system PL3 comprises beam Propagation member 12C, so that transmit (with reference to Fig. 3) from the light beam edge-X-direction that is included in the point among the ILF3 of field of illumination.On the substrate PT other A, B, D and E outwards are shifted along X-direction and Y-direction from some a, b, d and the e on the mask MA.Therefore, respective projection optical system PL1, PL2, PL4 and PL5 comprise beam Propagation member 12A, 12B, 12D and 12E, and described beam Propagation member 12A, 12B, 12D and 12E are used for making the light beam from the point that is included in corresponding field of illumination to transmit (with reference to Fig. 3 and 4) along X-direction and Y-direction.Further, it is such optical system that beam Propagation member 12A to 12E can also be used as, described optical system at first makes perpendicular to optical axis AX11 to the AX51 deflection of mask MA and makes optical axis AX11 to AX51 along the predetermined shift amount of X-direction and Y-direction displacement, and then makes optical axis AX11 to AX51 deflection to produce once more the optical axis AX13 to AX53 perpendicular to substrate PT.When needn't be perpendicular to substrate PT from the main beam of projection optical system PL1 to PL5, perhaps when projection optical system PL1 to PL5 needed not to be the base side telecentric optical system, projection optical system PL1 to PL5 can be such as the three-dimensional correction optical system.This makes no longer need be in order to form the beam Propagation member of second graph ABDEC that will be similar to the first figure abdec.In this case, the three-dimensional correction optical system also plays the effect of beam Propagation member.
In Fig. 2, as in the present embodiment, when second graph ABDEC when similar to the first figure abdec with respect to the enlargement ratio β of the expansion of the first figure abdec, by any point among the area of visual field OF1 to OF5 of projection optical system PL1 to PL5 is linked first figure that forms and by with among the image-region IF1 to IF5, with visual field OF1 to OF5 in the point of some conjugation to link the second graph that forms be similar fitgures with the enlargement ratio β amplification of expansion.
In Fig. 2,, will pay close attention to two projection optical system PL1 and PL2 below as an example.Link and be included in the illumination field of view ILF1 of projection optical system PL1 and PL2 and the first line segment ab of some a among the ILF2 and b, and link be included among EF1 of view field and the EF2, with some a and the some A of b conjugation and the second line segment AB of B, can be called its enlargement ratio and be the similar fitgures of the enlargement ratio β that enlarges.The first line segment ab and the second line segment AB also can be called the line segment on the corresponding limit that forms the first figure abdec and second graph ABDEC, and described first figure abdec and described second graph ABDEC are the similar fitgures of its enlargement ratio for the enlargement ratio β of expansion.Equally in this case, at least one among projection optical system PL1 and the PL2 need comprise the beam Propagation member, with the light beam displacement that will come from the point in the field of illumination that is included on the mask MA be directed to respective projection zone on the substrate PT.
In Fig. 2, field of illumination ILF1, ILF3 and ILF5 in first row are provided with rule at interval along the Y-direction.In this state, field of illumination ILF2 in the secondary series and ILF4 move predetermined space along the X-direction.As a result, the interval hypotenuse portion of field of illumination ILF1, ILF3 and ILF5 and the hypotenuse portion of field of illumination ILF2 and ILF4 overlap each other.Further, five field of illumination ILF1 to ILF5 (and then visual field OF1 to OF5) are set to continue each other along the Y-direction.Therefore, be set to relative to each other continuing each other along the Y-direction when the X-direction moves with the EF1 to EF5 of view field (and then image-region IF1 to IF5) of field of illumination ILF1 to ILF5 conjugation.In other words, area of visual field OF1 to OF5 and image-region IF1 to IF5 are set to continue each other along the direction (being the direction with the direction of scanning quadrature in this example) that intersects with the direction of scanning.
As shown in Figure 3, the area of the pattern EM that forms on mask MA can comprise and five corresponding regional area 10A, 10B, 10C, 10D and 10E of five field of illumination ILF1 to ILF5 among Fig. 2.Five regional area 10A to 10E have the identical width along the Y-direction respectively.In fact regional area 10A to 10E continues each other along the Y-direction.During the manufacturing of mask MA, in whole area of the pattern EM, form circuit pattern (alphabetical A) continuously.This makes the area of the pattern EM miniaturization of mask MA.Further, the manufacturing cost of mask MA reduces, and makes the mask saddle MSTG miniaturization shown in Fig. 1.This has reduced the manufacturing cost of projection aligner.Pattern transit area EP on the substrate PT also can comprise five regional area 11A, 11B, 11C, 11D and 11E, and it has the identical width along the Y-direction respectively.Regional area 11A to 11E also continues in fact each other.
In this case, regional area 10A, 10C and 10E utilize first row field of illumination ILF1, the ILF3 and ILF5 to illuminate, and described regional area 10A, 10C and 10E are the regional areas at the interval on the mask MA.As shown in Figure 4, regional area 10B between regional area 10A, 10C and the 10E and 10D utilize secondary series field of illumination ILF2 and ILF4 to illuminate.The boundary portion of field of illumination ILF1 to ILF5 is the overlapping portion of adjacent field of illumination.Each boundary portion has overlapping width d1 along the Y-direction.The boundary portion of field of illumination ILF1 and ILF2 illustrates as an example.The boundary portion of regional area 10A to 10E utilizes two field of illuminations to illuminate with overlap mode.As an example, the width of regional area 10A and 10B is that the boundary portion 10AB of d1 utilizes field of illumination ILF1 and ILF2 to illuminate with overlap mode.As a result, regional area 11A, 11C and 11E are by the first row EF1 of view field, the EF3 and EF5 exposure, and described regional area 11A, 11C and 11E are the regional areas at the interval on the substrate PT.Regional area 11B between regional area 11A, 11C and the 11E and 11D are by EF2 of secondary series view field and EF4 exposure.Further, the boundary portion of the EF1 to EF5 of view field is the overlapping portion of adjacent view field.Each boundary portion has the width d2 (it obtains by amplifying width d1 with the enlargement ratio β that enlarges) along the Y-direction.The boundary portion of EF1 of view field and EF2 illustrates as an example in the drawings.The boundary portion of regional area 11A to 11E also is to utilize two view fields to illuminate with overlap mode.As an example, the width of regional area 11A and 11B is that the boundary portion 11AB of d2 utilizes EF1 of view field and EF2 to illuminate with overlap mode.Although five EF1 to EF5 of view field of substrate PT expose separately, this method has still been eliminated the error on the continuity in the boundary portion of the regional area 11A to 11E on the substrate PT.
In the whole area of the pattern EM of mask MA, form continuous circuit pattern.This has reduced the description error of the circuit pattern on the mask MA, and has therefore reduced the error on the continuity that projects to the image on second object.In contrast, when the circuit pattern that forms in a plurality of zone of dispersions on being formed at mask MA is projected on second object, error can take place to describe in the circuit pattern in being formed at a plurality of zone of dispersions of mask MA.
When the pattern of mask MA is sent to substrate PT when going up, thereby mask MA is moved illuminate the front side (such as-X-direction) of the field of illumination ILF1 to ILF5 among Fig. 1, thereby and make substrate PT move the front side that pattern is sent to the EF1 to EF5 of view field.Afterwards, by using projection enlargement ratio β mask saddle MSTG and substrate saddle PSTG edge+X-direction synchronously to be activated as speed ratio.As a result, regional area 10A, the 10C of mask MA and 10E at first begin to be illuminated with first row field of illumination ILF1, ILF3 and the ILF5.Then, the pattern among field of illumination ILF1, ILF3 and the ILF5 is via projection optical system PL1, PL3 and PL5 and be transferred into the EF1 of view field, EF3 and EF5 on the regional area 11A, the 11C that form on the substrate PT and 11E.Afterwards, mask MA and substrate PT are as being scanned synchronously with one another by such edge+X-direction shown in arrow SM1 and the SP1.As a result, as shown in Figure 4, the regional area 10B of mask MA and 10D begin to utilize secondary series field of illumination ILF2 and ILF4 and are illuminated.Be included in pattern among field of illumination ILF2 and the ILF4 via projection optical system PL2 and PL4 and be transferred into EF2 of view field and the EF4 that on regional area 11B on the substrate PT and 11D, forms.When the area of the pattern EM of mask MA utilize secondary series field of illumination ILF2 and ILF4 and be scanned and substrate PT on pattern transit area EP utilize the EF2 of secondary series view field and EF4 and when being scanned, the upright image of amplification of the whole pattern among the area of the pattern EM on the mask MA is transferred into the pattern transit area that forms on substrate PT, the upright image of described amplification amplifies with projection enlargement ratio β.
As mentioned above, the regional area 10A to 10E on the mask MA, have along the boundary portion of the width d1 of Y-direction and in adjacent field of illumination ILF1 to ILF5, be illuminated respectively with overlap mode.As a result, the regional area 11A to 11E on the substrate PT, have along the boundary portion of the width d2 of Y-direction and be exposed twice respectively by the adjacent EF1 to EF5 of view field.This has eliminated the error on the continuity of the image in the boundary portion.Further, form the pattern of mask MA in the present embodiment continuously.Therefore, mask MA itself does not have discontinuous part.This has also reduced the error on the continuity of the image on the substrate PT.Implement after the scan exposure, the substrate PT on the substrate saddle PSTG among Fig. 1 changes with another substrate, and mask MA and substrate edge-X-direction are activated synchronously with one another then.This makes the enlarged image with the pattern of mask MA be sent in the next substrate.
In aforesaid present embodiment, being included in second graph ABDEC among some a to e first figure abdec that forms and the EF1 to EF5 of view field that is included in by binding on the substrate PT among the field of illumination ILF1 to ILF5 of the projection optical system PL1 to PL5 on the mask MA, that form to the some A to E of some a to e conjugation by binding is similar figure, and wherein second graph ABDEC is by using the enlargement ratio β that enlarges to obtain from the first figure abdec as magnification ratio.Field of illumination ILF1 to ILF5 and the EF1 to EF5 of view field continue along Y-direction (non-direction of scanning) each other becoming when relative to each other mobile along the X-direction.As a result, mask MA and substrate PT by the enlargement ratio β that use to enlarge as speed ratio and by run-down synchronously, the enlarged image of the pattern of mask MA is projected on the substrate PT via projection optical system PL1 to PL5 (projecting optical device PL) simultaneously.This makes the pattern of mask MA to be transferred on the substrate PT with pinpoint accuracy, high throughput and minimal continuous error.
As shown in Figure 2, in the present embodiment, the field of illumination ILF1 to ILF5 of the projection optical system PL1 to PL5 on the mask MA prolongs along Y-direction (with the direction of direction of scanning quadrature).On the substrate PT also prolong along Y-direction (with the direction of direction of scanning quadrature) with the EF1 to EF5 of view field field of illumination ILF1 to ILF5 conjugation (image-region of projection optical system PL1 to PL5).Therefore, the EF1 to EF5 of view field only occupies littler width along the direction of scanning.This makes the idling stopping distance of substrate PT minimize and improve throughput.
Each example according to the projection optical system PL1 to PL5 of present embodiment is described below.As mentioned above, projection optical system PL1 to PL5 need satisfy two following conditions.
1) projection optical system PL1 to PL5 respectively in substrate the enlargement ratio β with common expansion form upright image.
2) at least four among the projection optical system PL1 to PL5 comprise the beam Propagation member respectively, so that be directed to respective projection zone on the substrate PT along Y-direction (or X-direction and Y-direction) displacement and with this light beam at least from the light beam of the corresponding field of illumination on the mask MA, thereby make the first figure abdec on the mask MA of second graph ABDEC in Fig. 2 on the substrate PT, and by using the enlargement ratio β that enlarges to be exaggerated as magnification ratio.
Fig. 5 (A) shows projection optical system PL1 and the PL2 according to first example.Projection optical system PL1 (PL2) comprising: three SB11 of indicative of local optical system, SB12 and SB13 (SB21, SB22 and SB23); Da He (ridge) mirror DM1 (DM3); And mirror FM2 (FM4).Reach He Jing DM1 (DM3) and make the optical axis AX11 mask MA side and that be parallel to the Z-axle (AX21) deflection, thereby produce the optical axis AX12 (AX22) in the XY plane and make the light beam counter-rotating.Mirror FM2 (FM4) makes optical axis AX12 (AX22) deflection to produce optical axis AX13 (AX23) once more, and described optical axis AX13 (AX23) is positioned at substrate PT side and is parallel to the Z-axle.In this case, reach He Jing DM1 (DM3) and have two vertical reflection surfaces, as shown in Fig. 5 (B), described vertical reflection surface makes and enters the light beam counter-rotating that reaches He Jing DM1 (DM3).
In Fig. 5 (A), three SB11 of indicative of local optical system, the SB12 of projection optical system PL1 and SB13 are that the amplification handstand image of the pattern of the mask MA that will amplify with the enlargement ratio β that enlarges together is formed into the imaging optical system (can be dioptric system or reflected refraction system) on the substrate PT.Reach He Jing DM1 and mirror FM2 changes the handstand image into upright image.In this case, reach the effect that He Jing DM1 not only plays beam Propagation member 12A, but also play the effect of the optics that is used to form upright image.Same structure applications is in other projection optical system PL2 to PL5.Mirror FM2 (FM4) and the He Jing DM1 (DM3) that reaches that plays the effect of beam Propagation member 12A (12B) make from the displacement of the light beam of mask MA.Distance (or line segment length) between the point on projection optical system PL1 on the mask MA and the optical axis of PL2 is called distance L M.Substrate PT go up and mask MA on the point of some conjugation between distance (or line segment length) be called distance L P.The enlargement ratio β that distance L P equals to enlarge with respect to the enlargement ratio of distance L M.
Fig. 6 shows according to the projection optical system PL1 of second example and PL2.In Fig. 6, projection optical system PL1 (PL2) comprises first imaging optical system (SB21), the second imaging optical system SB13 (second imaging optical system of group SB22 and back group SB23 before comprising), mirror DM1 (DM3) and mirror FM2 (FM4).First imaging optical system comprises that the preceding group of SB11 of the handstand intermediate image IM1 (IM2) of the pattern that is used to form mask MA organizes SB12 with the back.The second imaging optical system SB13 is formed into the handstand image of intermediate image on the substrate PT.Mirror DM1 (DM3) makes the optical axis deflection of mask MA side to produce the optical axis CRK1 (CRK2) in the XY plane.Mirror FM2 (FM4) makes optical axis CRK1 (CRK2) deflection to produce the optical axis of substrate PT side.In this case, first imaging system of projection optical system PL1 and second imaging system form the upright image of amplification of the pattern of the mask MA of amplifying with the enlargement ratio β that enlarges together on substrate PT.Two mirror DM1 and FM2 play the effect of beam Propagation member 12A, so that be directed to substrate PT side from the light beam displacement of mask MA and with this light beam.This structure is applied among other projection optical system PL2 to PL5 in an identical manner.
Fig. 7 shows the projection optical system PL1 to PL5 according to the 3rd example.In Fig. 7, the optical axis of projection optical system PL1 from a side of more close mask MA be deflected with generation be parallel to the Z-axle optical axis AX11, be parallel to the X-axle optical axis AX12, be parallel to the Y-axle optical axis AX13, be parallel to the optical axis AX14 of X-axle and be positioned at substrate PT side and be parallel to the optical axis AX15 of Z-axle.Make the optical axis deflection of projection optical system PL1 by this way, thereby on substrate PT, form the upright image of the pattern of mask MA based on the principle identical with the Porro prism erecting system.Further, second graph ABDEC enlargement ratio β similar to the first figure abdec and that enlarge by use obtains as magnification ratio.As a result, be included in imaging optical system among the projection optical system PL1 and can be the ordinary optical system of the handstand image of the pattern that only on substrate PT, forms a mask MA, or form the optical system of even number intermediate image.This structure is applied among other projection optical system PL2 to PL5 in an identical manner.
Fig. 8 shows the layout that is used for making in the mode shown in Fig. 7 the mirror of light beam or optical axis deflection (bending) that is included among the projection optical system PL1 to PL5.In Fig. 8, projection optical system PL1 comprises four mirrors, perhaps more specifically, comprise the first mirror 13A, the second mirror 14A, the 3rd mirror 15A and the 4th mirror 16A (deflection component (bending member)), these mirrors are provided with in order from a side of more close mask MA.The first mirror 13A to the, four mirror 16A make light path (or the corresponding optical axis) deflection from the light beam of mask MA.The plane parallel of normal vector of reflecting surface that comprises the second mirror 14A on the optical axis and the 3rd mirror 15A is in the patterned surfaces (XY plane) of mask MA.On the second mirror 14A reflection and the light beam that enters the 3rd mirror 15A be directed to along with the crossing Y-direction in direction of scanning (X-direction) of mask MA.Four mirror 13A to 16A make it possible to form the upright image of the pattern of mask MA on substrate PT.Four mirror 13A to 16A also play the effect that is used for the light beam from mask MA is sent to the beam Propagation member of substrate PT side.This structure is applied among other projection optical system PL2 to PL5 in an identical manner.Such as, projection optical system PL4 (PL5) comprises mirror 13D to 16D (14E to 16E).
Projection optical system PL1 can comprise the mirror except that described four mirror 13A to 16A.
Second graph ABDEC among Fig. 2 is the upright figure that enlargement ratio β similar to the first figure abdec and that enlarge by use obtains as magnification ratio.The amplification center (centre of similarity) of these figures can be positioned any position, shown in the modification as mentioned below.The figure abdec that forms by the point in the area of visual field that links projection optical system PL1 to PL5 etc. can be Any shape.
Fig. 9 forms the modification of first and second figure when showing the mid point of line segment of the some b that is positioned to link at the amplification center 17 of figure in the area of visual field that is included in projection optical system PL2 and PL3 and d.
Figure 10 show the amplification center 17 of figure be positioned to link the some a to e in the area of visual field that is included in projection optical system PL1 to PL5 and the center of the first figure abdec that forms near the time formed first and second figure, and the beam Propagation member that the beam Propagation member of first to the 5th projection optical system PL1 and PL5 transmits light beam the identical shift amount (optical axis is transmitted identical shift amount) and second to the 4th projection optical system PL2 to PL4 respectively transmits light beam identical shift amount respectively.In this case, projection optical system PL1 can have identical structure with PL5, and projection optical system PL2 to PL4 can have identical structure.
Figure 11 (A) forms the modification of first and second figure when showing the first figure abdec that is positioned to link the some a to b in the area of visual field that is included in projection optical system PL1 to PL5 at the amplification center 17 of figure and forms outside.In this case, the first projection optical system PL1 that comprises optical system 18A and 19A makes the light beam displacement than the bigger shift amount of the second projection optical system PL2 that comprises optical system 18B and 19B, as shown in Figure 11 (B).
Figure 12 shows such modification, wherein, the amplification center 17 of figure be positioned to link the some a to e in the area of visual field that is included in projection optical system PL1 to PL5 and the center of the first figure abdec that forms near the time form first and second figure, and the beam Propagation member of projection optical system PL1 to PL5 transmits light beam identical shift amount LC (optical axis is transmitted identical shift amount) respectively.In this case, projection optical system PL1 to PL5 can have identical structure.This has reduced the manufacturing cost of projection optical system.
In the above-described embodiment, some a to e conjugation in the upright image of first figure that links the second graph be included in the some A to E in the area of visual field and form and be point of contact a to e and form, wherein said some A to E and the area of visual field that is included in projection optical system PL1 to PL5.Alternately, second graph can be the handstand image of first figure, perhaps can be that first figure is only along the X-direction or only along the upright image of Y-direction.
Figure 18 shows and links in the field of illumination (area of visual field) be included in the projection optical system PL1 to PL5 on the mask MA and be positioned at the some a to e on the optical axis of projection optical system PL1 to PL5 and form the modification of the first figure abdec.Projection optical system PL1 to PL5 has the enlargement ratio β of expansion.Link in the view field's (image-region) be included on the substrate PT and be positioned at the some A to E on the optical axis of projection optical system PL1 to PL5 and form second graph ABDEC.Point A to E and some a to e are with respect to projection optical system PL1 to PL5 conjugation.Second graph ABDEC is the enlarged image of figure, and itself and the first figure abdec are the line symmetry with respect to the Y-axle and amplify with the enlargement ratio β that enlarges.In this case, second graph ABDEC be the first figure abdec along the direction of scanning (X-direction) the handstand image and be the first figure abdec along non-direction of scanning the upright image of (Y-direction).Therefore, each among the projection optical system PL1 to PL5 need be formed into the image of the pattern of mask MA on the substrate PT, and described image is that the handstand image then is upright image along non-direction of scanning along the direction of scanning.In this example, the master pattern that form on mask MA (alphabetical F) only reduces along direction of scanning handstand and size in advance.During the scan exposure, the direction of scanning SM1 of mask MA and the direction of scanning SP1 of substrate PT are set at that direction is opposite each other along the X-direction.As a result, on substrate PT, form pattern with ideal form.By this way, when enlarged image and the second graph ABDEC of the first figure abdec have line symmetry (mirror reflection) when concerning, it is similar figure that the enlarged image of the first figure abdec also is used as with second graph ABDEC.
In the above-described embodiment, projection optical system PL1 to PL5 is set at and has identical enlargement ratio.Yet, such as, when the nonlinear distortion of the substrate PT that occurs according at processing substrate PT the time transmits pattern, can adopt first technology that under the slightly different state of the enlargement ratio of projection optical system PL1 to PL5, is used to implement scan exposure.Alternately, can adopt second technology that is used for when changing enlargement ratio a little, implementing scan exposure.
In first technology, come to be independently each the setting enlargement ratio among a plurality of projection optical system PL1 to PL5 according to the amount distortion of substrate in the image-region of projection optical system PL1 to PL5.Then, when needed, in base plane, implement scan exposure in the position of shift map picture.
In second technology, when utilizing first technology to implement scan exposure, change each enlargement ratio among the projection optical system PL1 to PL5 along the localized distortion of direction of scanning according to substrate PT.
Second embodiment
13 to 17 second embodiment of the present invention is described with reference to the accompanying drawings.Identical according to the saddle system of the scanning projection exposure device of present embodiment with saddle system described in first embodiment.Yet the difference of the projecting optical device PLS of present embodiment and the projecting optical device PL of first embodiment shown in Fig. 1 is: projecting optical device PLS only uses the single-row projection optical system PL1 to PL3 rather than first row and the secondary series projection optical system PL1 to PL5; And by the non-direction of scanning displacement light beam of beam Propagation member (beam deflection (bending) member) edge with the direction of scanning quadrature of mask MA.Using the projecting optical device PL of single-row projection optical system PL1 to PL3 to implement twice scan exposure in second embodiment is sent on the matrix PT with the whole pattern with mask MA.Hereinafter, parts corresponding components shown in Figure 13 to 17 and shown in Fig. 1 to 4 will be endowed the Reference numeral identical with those parts, and can not describe in detail.
Figure 13 (A) is the schematic perspective view of the projection aligner of present embodiment.Figure 13 (B) is the perspective view that the layout of the projecting optical device PLS that is included in the projection aligner is shown.Projecting optical device PLS comprises a plurality of projection optical systems.Figure 14 schematically shows the operation of projection aligner.
Below with reference to Figure 13 (A) and 13 (B), the projection aligner of present embodiment comprises the projecting optical device PLS with first to the 3rd projection optical system PL1 to PL3.Here, first to the 3rd projection optical system PL1 to PL3 is roughly the same with the structure of projection optical system PL1 shown in Fig. 5 and PL2.The difference of projection optical system PL1 shown in projection optical system PL1 and PL3 and Fig. 5 and PL2 is that the beam deflection direction (direction of displacement) of the optical path-deflecting member (beam Propagation member) of projection optical system PL1 and PL3 is the non-direction of scanning (Y-direction) of mask MA.The second projection optical system PL2 of second embodiment does not comprise deflection optical member (beam Propagation member), but comprises a plurality of indicative of local optical SB21 to SB23 of system that are arranged on optical axis AX21 and the AX23.Optical axis AX21 and AX23 extend on straight line.Utilize this structure, as shown in Figure 13 (B), on the XY plane during projection, the center g of the area of visual field OF2 of the second projection optical system PL2 and the center G of image-region IF2 (with the point of the center conjugation of area of visual field OF2) overlap each other.
The projection optical system PL1 to PL3 of second embodiment is set to form the predetermined column that (Y-direction) extends along non-direction of scanning.The direction of scanning, straight line upper edge (X-direction) that the area of visual field OF1 to OF3 of projection optical system PL1 to PL3 and image-region IF1 to IF3 extend in along non-direction of scanning (Y-direction) is provided at predetermined intervals.The figure fgh (first line segment) that center f, the g of area of visual field OF1 to OF3 is linked with h and form links with H (central point of image-region IF1 to IF3) with some F, the G of the center conjugation of area of visual field OF1 to OF3 and the figure FGH of formation is similar figure with substrate PT is gone up.The ratio of similitude of these figures equals the enlargement ratio β of the expansion of projection optical system PL1 to PL3.The centre of similarity of these figures be positioned at the central point g that links area of visual field OF2 and with the straight line of the some G (central point of image-region IF2) of central point g conjugation on.
Among central point f, the g of area of visual field OF1 to OF3 and the distance between the h and the area of visual field OF1 to OF3 each along non-direction of scanning (Y-direction) width about equally.Among central point F, the G of area of visual field IF1 to IF3 and the distance between the H and the image-region IF1 to IF3 each along non-direction of scanning (Y-direction) width about equally.In Figure 13 (A), lighting unit IU forms field of illumination ILF1 to ILF3 on mask MA mode is to make field of illumination ILF1 to ILF3 identical with the shape of the area of visual field OF1 to OF3 of projection optical system PL1 to PL3.Yet the shape of field of illumination ILF1 to ILF3 is not limited to the shape identical with area of visual field OF1 to OF3.The shape of field of illumination ILF1 to ILF3 only needs so to get final product, and makes that going up field of illumination ILF1 to ILF3 at the patterned surfaces (first surface) of mask MA can be included among the corresponding area of visual field OF1 to OF3 that is:.This pass between the shape of field of illumination and the shape of area of visual field ties up in first embodiment and the modification thereof and also is met.
As shown in Figure 15, such as, projection optical system PL2 can comprise field stop FS2.In this case, lighting unit IU can go up on the surface of mask MA (first surface) and form such as rectangular illumination area I LF2.Then, lighting unit IU can by the intermediate image that uses field stop FS2 to make beam-shaping from mask MA, described field stop FS2 have the polygon aperture and to be arranged on projection optical system PL2 form point near.By this way, lighting unit IU can be on the surface of substrate PT (second surface) goes up the similar image-region IF2 of shape that forms to the orifice part of field stop FS2.
Return with reference to Figure 14, the exposing operation according to the projection aligner of present embodiment is described below.Figure 14 (A) shows the state that is right after after first scan exposure begins.Figure 14 (B) shows the state of first scan exposure before being near completion.Figure 14 (C) shows second scan exposure and is about to begin state before.Figure 14 (D) shows the state that is right after after second scan exposure is finished.In order to simplify accompanying drawing, Figure 14 (A) does not illustrate the first and the 3rd projection optical system PL1 to PL3 to 14 (D), but only shows the optical axis of projection optical system PL1 to PL3.
At first make be set to image-region (view field) IF1 to IF3 that along non-direction of scanning (Y-direction) become row in alignment with the pattern transit area EP on the substrate PT+Y-direction end.Area of visual field OF1 to OF3 also in alignment with the area of the pattern EM on the mask MA+Y-direction end.As shown in Figure 14 (A), then, make mask MA and substrate PT along as by shown in arrow SM1 and the SP1+the X-direction implements first scan exposure when moving with the corresponding speed ratio of the enlargement ratio of projection optical system.
As shown in Figure 14 (B), be used for first scan exposure that image-region IF1 to IF3 that pattern image forms moves with respect to substrate PT edge-X-direction and cause a plurality of pattern transit area EP10 to EP30 of formation on substrate PT.Pattern transit area EP20 to EP30 is (Y-direction) spaced apart and (X-direction) extension along the direction of scanning along non-direction of scanning.After first scan exposure was finished, as moving certain amount of movement by the non-direction of scanning shown in arrow SM2 and the SP2 (Y-direction), the enlargement ratio of its ratio and projection optical system PL1 to PL3 was corresponding with the step-by-step system edge for mask MA and substrate PT.Then, begin second scan exposure.As shown in Figure 14 (C), make mask MA and substrate PT along as by shown in arrow SM1 and the SP1-the X-direction (with the side of first scan exposure in the opposite direction) implement second scan exposure when moving with certain speed ratio, the enlargement ratio of described speed ratio and projection optical system PL1 to PL3 is corresponding.
As shown in Figure 14 (D), the image-region IF1 to IF3 that is used for pattern image formation forms a plurality of pattern transit area EP11 to EP31 with respect to second scan exposure that substrate PT edge+X-direction moves on substrate PT.Pattern transit area EP11 to EP31 is (Y-direction) spaced apart and (X-direction) extension along the direction of scanning along non-direction of scanning.
Pattern transit area IP10 to EP30 that forms by first scan exposure and the pattern transit area EP11 to EP31 that forms by second scan exposure are overlapping along non-direction of scanning.The overlapping portion of pattern transit area EP10 to EP30 and pattern transit area EP11 to EP31 is with the overlap mode exposed areas.In first scan exposure, image-region IF1 is the trapezoidal shape of inequilateral, and image-region IF2 and IF3 then are the shape of isosceles trapezoid respectively.In second scan exposure, image-region IF1 and IF2 are the shape of isosceles trapezoid respectively, and image-region IF3 then is the trapezoidal shape of inequilateral.This exposure of implementing in zone at interval makes that the pattern transit area can be bigger with respect to the quantity of a plurality of projection optical system PL1 to PL3.
Figure 16 shows another example that can be used in the projection optical system PL1 among projecting optical device PLS shown in Figure 13 (A) and Fig. 1 and the PL.In Fig. 6, projection optical system PL1 use the refraction member but not reflecting member as beam Propagation member 12A (first and second deflection component).
In Figure 16, first deflection component comprises the first prism component FL11, and second deflection component comprises the second prism component FL12.The first prism component FL11 has light-entering surface and light output surface, the planar alignment that described light-entering surface and its normal overlap with the optical axis AX11 of the first local optical system SB11, and described light output surface is aligned to respect to light-entering surface and forms the angle of wedge.The light beam that enters the first prism component FL11 is deflected in the XZ plane and penetrates along the optical axis AX12 that tilts with respect to optical axis AX11.
The second prism component FL12 has the light-entering surface that tilts towards the second local optical system SB12 and with respect to optical axis AX12 and the light output surface of the planar alignment that overlaps with the optical axis AX13 that is parallel to optical axis AX11 with its normal.The angle of wedge that is formed by light-entering surface and the light output surface of the second prism component FL12 equals the angle of wedge that light-entering surface and light output surface by the first prism component FL11 form.The light beam that enters the second prism component FL12 is deflected in the XZ plane, and penetrates along the optical axis AX13 that is parallel to optical axis AX11.
In the example shown in Figure 16, the first prism component FL11 and the second prism component FL12 form the part of beam Propagation member.In Figure 16, light beam is (X-direction) transmission along the direction of scanning.When the beam Propagation member rotates around the Z-axle, enter light beam and can be transferred to along the position of non-at least direction of scanning displacement.
Figure 17 shows the projection optical system PL1 according to another example.Projection optical system PL1 comprises the reflected refraction secondary imaging optical system that forms single intermediate image but not the refraction projection optical system.In Figure 17, projection optical system PL1 comprises first imaging optical system that is used to form intermediate image EM1 and is used for intermediate image IM1 is imaged onto the second intermediate optical system on the substrate PT once more.First imaging optical system comprise along the first group of G11 that is provided with at the upwardly extending optical axis AX11 in the side of the normal to a surface of mask MA, be amplitude separator or polarization beam splitter beam splitter BS1, comprise second group of G12 of concave mirror CM1 and along with optical axis AX11 quadrature and be parallel to the 3rd group of G13 that the optical axis AX12 that extends direction of scanning (X-direction) is provided with.Second imaging optical system comprises the 4th group of G14 being provided with along optical axis AX12, be amplitude separator or polarization beam splitter beam splitter BS2, comprise the 5th group of G15 of concave mirror CM1 and along being parallel to optical axis AX11 and being parallel to the 6th group of G16 that optical axis AX13 that the direction of the normal of substrate PT extends is provided with.
In the example shown in Figure 17, area of visual field and image-region are defined as and comprise optical axis AX11 and AX13 (at the axle area of visual field with at the axle image-region).Alternately, area of visual field and image-region can be from optical axis AX11 and AX13 displacements.In other words, area of visual field and image-region can be from the axle area of visual field with from the axle image-region.In the example shown in Figure 17, the release surface of beam splitter BS1 is corresponding to first deflection component, and the release surface of beam splitter BS2 is corresponding to second deflection component.The direction that the optical axis AX12 of binding beam splitter BS1 and BS2 extends is corresponding to first yawing moment.
In each above-mentioned embodiment, the circuit pattern that forms in the area of the pattern of mask MA is sent to the single pattern transit area on the substrate PT.Alternately, can after move non-direction of scanning, implement scan exposure, and can on a plurality of transit areas on the substrate PT, implement exposure at substrate PT.In this case, a plurality of transit areas can be separate or overlapping.
Use the scanning-exposure apparatus of aforesaid projection optical system PL (perhaps PLS) can be used for going up formation predetermined pattern (such as circuit pattern or electrode pattern) to obtain such as micromodule equipments such as liquid crystal displays in substrate (glass plate).The method of using the scanning projection exposure device to make liquid crystal display is described below with reference to the flow process shown in Figure 19.
In the step S401 of Figure 19 (pattern formation operation), implement applying operation, exposure process and developing procedure.In applying operation,, the substrate that will implement exposure thereon prepares the sensitization substrate by being applied photoresist.In exposure process, be used for the mask pattern of liquid crystal display by using the scanning projection exposure device in the sensitization substrate, to transmit and expose.At developing procedure, the sensitization substrate is developed.Apply operation, exposure process and developing procedure and constitute the lithographic printing operation, in substrate, form predetermined corrosion-resisting pattern by this lithographic printing operation.After the lithographic printing operation, implement and use corrosion-resisting pattern to remove operation and other operation as etching procedure, the resist of mask.By these operations, in substrate, form the predetermined pattern that comprises a plurality of electrodes.To implement lithographic printing operation and other operation with the corresponding number of times of the number of plies that in substrate, forms.
In step S402 (colored filter formation operation), be provided with matrix by group, perhaps the group of three banded R, G and B optical filter be set and form colored filter along horizontal scan direction to three accurate optical filters corresponding with red (R), green (G) and blueness (B).In step S403 (unit assembling procedure), inject liquid crystal such as the substrate that obtains by step S401 and between such as the colored filter that obtains by step S402 what have a predetermined pattern.So just, made liquid crystal panel (liquid crystal cells).
In step S404 (module assembling procedure), other parts that will comprise backlight and make liquid crystal panel (liquid crystal cells) can carry out the electric loop of display operation are installed on the liquid crystal panel of making (liquid crystal cells).So just, finished the manufacturing of liquid crystal display.The manufacture method of aforesaid liquid crystal display has been used the scanning projection exposure device that makes the mask pattern miniaturization of above-mentioned embodiment.Utilize this manufacture method, can make liquid crystal display with low cost.Especially, use the projection aligner of the projection optical system PL among Fig. 1 to reduce error on the continuity of the suprabasil image of sensitization, and make it possible to come manufacturing equipment with pinpoint accuracy.
The present invention should not be confined to above-mentioned embodiment, but can carry out multiple remodeling under the situation that does not deviate from scope and spirit of the present invention.
Industrial applicability
In device manufacturing method according to the present invention, use according to projecting optical device of the present invention Come in step of exposure, to implement exposure. This has reduced the size of the pattern on first object (mask) And reduced the continuity error of the projected image on the second object. Therefore, can be with pinpoint accuracy Make the equipment such as micromodule equipment with low manufacturing cost. Further, when using according to of the present invention the During two projecting optical devices, the pattern on first object can be by single sweep operation exposure and whole quilts Be sent to second object. This has improved throughput.

Claims (29)

1. projecting optical device that is used on second object forming the enlarged image of first object, wherein, described first object and described second object relatively move along predetermined direction of scanning, and described projecting optical device is characterised in that to have:
First projection optical system and second projection optical system, described first projection optical system and described second projection optical system have the enlargement ratio of expansion, and each in described first projection optical system and described second projection optical system forms the image of the part of described first object on described second object;
Wherein, in described first projection optical system and described second projection optical system at least one comprises the beam Propagation member, and described beam Propagation member is used for by making from the light beam of any visual field point on described first object along at least will be from the beam Propagation of the visual field point conjugate points on described second object extremely with the direction displacement of described direction of scanning quadrature.
2. projecting optical device according to claim 1, it is characterized in that described beam Propagation member is by making from the light beam of any visual field point on described first object along described direction of scanning and will be from the beam Propagation of the visual field point conjugate points on described second object extremely with the direction displacement of described direction of scanning quadrature.
3. projecting optical device according to claim 1 and 2 is characterized in that the enlargement ratio of described first projection optical system is different from the enlargement ratio of described second projection optical system.
4. projecting optical device according to claim 1, it is characterized in that, when obtaining first line segment by any visual field point that connects described first projection optical system on described first object and described second projection optical system and when being connected two conjugate points in the visual field point on described second object and obtaining second line segment, described first projection optical system is arranged so that with described second projection optical system described first line segment forms one side of first figure relevant with the part of described first object, and make described second line segment form one side of the second graph relevant with the image of the part of described first object, wherein said second graph is the similar fitgures of described first figure, and described second graph is described enlargement ratio with respect to the magnification ratio of described first figure.
5. projecting optical device according to claim 4, it is characterized in that described beam Propagation member is by making from the light beam of any visual field point on described first object along described direction of scanning and will be from the beam Propagation of the visual field point conjugate points on described second object extremely with the direction displacement of described direction of scanning quadrature.
6. according to claim 4 or 5 described projecting optical devices, it is characterized in that having:
A plurality of projection optical systems, described a plurality of projection optical systems comprise described first projection optical system and described second projection optical system;
Wherein, when obtaining first figure by any visual field point that connects the described a plurality of projection optical systems on described first object and obtaining second graph by the conjugate points that connects the visual field point on described second object, described first projection optical system and described second projection optical system are arranged so that described second graph is the similar fitgures of described first figure, and described second graph is described enlargement ratio with respect to the magnification ratio of described first figure; And
Image-region edge on the area of visual field of the described a plurality of projection optical systems on described first object and described second object is provided with continuously with the direction that intersect described direction of scanning.
7. projecting optical device according to claim 6 is characterized in that, described second graph is the upright image or the handstand image of described first figure.
8. according to claim 6 or 7 described projecting optical devices, it is characterized in that:
Described first figure is described first line segment;
Described second graph is described second line segment; And
The view field of the described a plurality of projection optical systems on described second object is spaced apart from each other along the direction with described direction of scanning quadrature.
9. according to each described projecting optical device among the claim 1-8, it is characterized in that described first projection optical system and described second projection optical system form the upright image of the part of described first object on described second object.
10. according to each described projecting optical device among the claim 1-9, it is characterized in that the intermediate image and comprising that at least one in described first projection optical system and described second projection optical system forms the part of described first object is arranged on the aperture, the visual field of the position that forms described intermediate image.
11. projecting optical device according to claim 9 is characterized in that, at least one in described first projection optical system and described second projection optical system comprises:
The first local optical system, the second local optical system and the 3rd indicative of local optical system, these indicative of local optical systems are provided with handstand image with a part that integrally forms described first object in order from a side of more close described first object;
First deflection component, described first deflection component are used to make from the beam deflection of the described first local optical system and with light beam and are directed to the described second local optical system; And
Second deflection component, described second deflection component are used to make from the beam deflection of the described second local optical system and with light beam and are directed to described the 3rd indicative of local optical system;
Wherein, described first deflection component or described second deflection component have hertz surface that reaches that is used to make beam deflection.
12. projecting optical device according to claim 9 is characterized in that, at least one in described first projection optical system and described second projection optical system forms the odd number intermediate image of the part of described first object.
13. projecting optical device according to claim 9 is characterized in that, at least one in described first projection optical system and described second projection optical system comprises:
At least four deflection components, perhaps first deflection component, second deflection component, the 3rd deflection component and quadrupole deflector member, these deflection components are provided with in order from a side of more close described first object, and wherein each deflection component all makes the optical path-deflecting from the light beam of described first object;
Wherein, comprise that the plane parallel of normal vector of optical axis of reflecting surface of described second deflection component and described the 3rd deflection component is in the patterned surfaces of described first object; And
Reflect and enter the crossing direction orientation in light beam edge and described direction of scanning of described the 3rd deflection component by described second deflection component.
14., it is characterized in that described first projection optical system and described second projection optical system are the image-side telecentric optical systems according to each described projecting optical device among the claim 1-13, wherein a side of more close described second object is a heart side far away.
15. projecting optical device according to claim 14 is characterized in that, described first projection optical system and described second projection optical system are that a side of more close described second object is the optical system of heart side far away.
16. according to each described projecting optical device among the claim 1-15, it is characterized in that, the image-region that forms on described second object by described first projection optical system and described second projection optical system has length along the longitudinal direction respectively, and described longitudinal direction is along extending with the direction of described direction of scanning quadrature.
17. a projection aligner that utilizes illumination light via first object second object to be exposed, described projection aligner is characterised in that to have:
Lamp optical system, described lamp optical system utilize illumination light to illuminate described first object;
According to each described projecting optical device in the claim 1 to 16, described projecting optical device forms the image of described first object that is illuminated by described lamp optical system on described second object; And
Saddle mechanism, described saddle mechanism makes described first object and described second object relatively move along described direction of scanning by the enlargement ratio that uses described projecting optical device as speed ratio.
18. projection aligner according to claim 17 is characterized in that, when making the exposure of described second object, described saddle mechanism makes described first object move along identical direction with described second object.
19., it is characterized in that described lamp optical system according to claim 17 or 18 described projection aligners:
On described first object, form a plurality of field of illuminations;
Via one in described a plurality of field of illuminations photoconduction is caused described first projection optical system; And
Via in the described field of illumination another photoconduction is caused described second projection optical system.
20. projection aligner according to claim 19 is characterized in that, described lamp optical system comprises and is arranged on the aperture, the visual field that becomes the position of optical conjugate with described first object.
21. a projection aligner is used for forming the enlarged image of described first object on described second object when first object and second object are relatively moved along predetermined direction of scanning, described projection aligner is characterised in that to have:
A plurality of projection optical systems, described a plurality of projection optical systems have the enlargement ratio of expansion, and each in the described projection optical system forms the image of the part of described first object on described second object; And
Lamp optical system, described lamp optical system are used for forming a plurality of field of illuminations on described first object;
Wherein, described a plurality of field of illuminations along with the direction setting of described direction of scanning quadrature, make that the adjacent field of illumination in the described field of illumination is partly overlapping each other.
22. projection aligner according to claim 21 is characterized in that, described a plurality of field of illuminations have the length of extending along the longitudinal direction respectively, and described longitudinal direction is along extending with the direction of described direction of scanning quadrature.
23., it is characterized in that the enlargement ratio of described first projection optical system is different from the enlargement ratio of described second projection optical system according to claim 21 or 22 described projection aligners.
24. an exposure method that utilizes illumination light via first object second object to be exposed, described exposure method is characterised in that following steps:
Utilize illumination light to illuminate described first object;
The image projection of described first object that utilization will be illuminated according to each described projecting optical device in the claim 1 to 16 is to described second object; And
As speed ratio described first object and described second object are relatively moved by the enlargement ratio that uses described projecting optical device along described direction of scanning.
25. an exposure method that utilizes illumination light via first object second object to be exposed, described exposure method is characterised in that following steps:
Utilize illumination light to form a plurality of field of illuminations on described first object, described a plurality of field of illuminations comprise first field of illumination and are different from second field of illumination of described first field of illumination;
Be used to from the light of described a plurality of field of illuminations according to the enlarged image that forms described first object in a plurality of exposure areas of enlargement ratio on described second object of predetermined expansion each; And
As speed ratio described first object and described second object are relative to each other moved by the enlargement ratio that uses described predetermined expansion;
Wherein, partly overlapping each other by described first field of illumination in described mobile step in the zone of scanning on described first object regional and that in described mobile step, on described first object, scan by described second field of illumination.
26. exposure method according to claim 25 is characterized in that, described a plurality of field of illuminations have length along the longitudinal direction respectively, and described longitudinal direction is along extending with the direction of described direction of scanning quadrature.
27. according to claim 25 or 26 described exposure methods, it is characterized in that, in described a plurality of exposure areas, form the enlarged image of described first object with different enlargement ratios.
28. according to each described exposure method in the claim 25 to 27, it is characterized in that, in described mobile step, change the enlargement ratio of the enlarged image of described first object that in described a plurality of exposure areas, forms.
29. a device manufacturing method is characterized in that having:
Step of exposure is by using the pattern that comes exposed mask in the sensitization substrate according to each described projection aligner in the claim 17 to 23;
Development step makes the described sensitization substrate that exposes in described step of exposure develop and produce and is configured as the mask layer consistent with the lip-deep described pattern of described sensitization substrate; And
Procedure of processing is processed via the surface of described mask to described sensitization substrate.
CN2007800492610A 2007-01-04 2007-12-25 Projection optical apparatus, exposure method and device manufacturing method Active CN101611352B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US87845207P 2007-01-04 2007-01-04
US60/878,452 2007-01-04
US11/987,779 2007-12-04
US11/987,779 US20080165333A1 (en) 2007-01-04 2007-12-04 Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method
PCT/JP2007/075353 WO2008081960A1 (en) 2007-01-04 2007-12-25 Projection optical apparatus, exposure method and device manufacturing method

Publications (2)

Publication Number Publication Date
CN101611352A true CN101611352A (en) 2009-12-23
CN101611352B CN101611352B (en) 2012-07-18

Family

ID=41484243

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800492610A Active CN101611352B (en) 2007-01-04 2007-12-25 Projection optical apparatus, exposure method and device manufacturing method

Country Status (2)

Country Link
CN (1) CN101611352B (en)
TW (1) TWI432914B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103969958A (en) * 2013-01-25 2014-08-06 上海微电子装备有限公司 Multi-exposure visual field splicing system and method
CN104516213A (en) * 2013-09-27 2015-04-15 佳能株式会社 Exposure apparatus, exposure method, and device manufacturing method
CN105116692A (en) * 2015-09-24 2015-12-02 京东方科技集团股份有限公司 Exposure apparatus and exposure method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201015230A (en) 2008-10-03 2010-04-16 Univ Nat Chiao Tung Immersion inclined lithography apparatus and tank thereof
JP7431532B2 (en) * 2019-08-21 2024-02-15 株式会社Ｓｃｒｅｅｎホールディングス Drawing method and drawing device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19757074A1 (en) * 1997-12-20 1999-06-24 Zeiss Carl Fa Projection exposure system and exposure method
JP4323863B2 (en) * 2003-05-22 2009-09-02 大日本スクリーン製造株式会社 Pattern drawing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103969958A (en) * 2013-01-25 2014-08-06 上海微电子装备有限公司 Multi-exposure visual field splicing system and method
CN103969958B (en) * 2013-01-25 2016-03-30 上海微电子装备有限公司 A kind of many exposure field splicing system and method
CN104516213A (en) * 2013-09-27 2015-04-15 佳能株式会社 Exposure apparatus, exposure method, and device manufacturing method
US9400434B2 (en) 2013-09-27 2016-07-26 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and device manufacturing method
CN105116692A (en) * 2015-09-24 2015-12-02 京东方科技集团股份有限公司 Exposure apparatus and exposure method
CN105116692B (en) * 2015-09-24 2018-03-09 京东方科技集团股份有限公司 A kind of exposure device and exposure method

Also Published As

Publication number Publication date
TWI432914B (en) 2014-04-01
CN101611352B (en) 2012-07-18
TW200834258A (en) 2008-08-16

Similar Documents

Publication Publication Date Title
US8654310B2 (en) Exposure method, exposure apparatus, photomask and method for manufacturing photomask
JP5630628B2 (en) Surface position detection apparatus, surface position detection method, exposure apparatus, and device manufacturing method
JP5577625B2 (en) Surface position detection apparatus, exposure apparatus, surface position detection method, and device manufacturing method
JP5071382B2 (en) Scanning exposure apparatus and microdevice manufacturing method
JPH0757986A (en) Aligner
CN102890431B (en) Exposure method and device and manufacturing method
CN101611352B (en) Projection optical apparatus, exposure method and device manufacturing method
JP2008166814A (en) Projection optical device, projection aligner, exposure method, and method of manufacturing device
CN103019040B (en) The manufacture method of exposure device, photomask and microcomponent and projecting optical device
KR101527234B1 (en) Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method
JP5110076B2 (en) Catadioptric projection optical system, projection optical apparatus, and scanning exposure apparatus
JP2007279113A (en) Scanning exposure apparatus and method for manufacturing device
CN102612669B (en) Exposure method, exposure apparatus, pattern forming method, and device manufacturing method
TWI430045B (en) Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method
JP2004012574A (en) Projection aligning optical system and aligner
JP2013195583A (en) Mask, exposure method, exposure device and device manufacturing method
JP2001154368A (en) Aligner and exposing method
JP2011022532A (en) Alignment apparatus, exposure apparatus, and method for manufacturing device
JP4051204B2 (en) Projection exposure equipment
JP2010010240A (en) Device for detecting face position, exposure device, and device manufacturing method
JP2001201688A (en) Exposure device, exposing method, illuminator and illuminating method
JP2008166650A (en) Scanning type exposure apparatus, method for manufacturing device and mask
JP2003255547A (en) Projection aligner
JP2010002524A (en) Projection optical system, exposure device, exposure method, and device manufacturing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1135196

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1135196

Country of ref document: HK