JPH0757986A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH0757986A JPH0757986A JP5161588A JP16158893A JPH0757986A JP H0757986 A JPH0757986 A JP H0757986A JP 5161588 A JP5161588 A JP 5161588A JP 16158893 A JP16158893 A JP 16158893A JP H0757986 A JPH0757986 A JP H0757986A
- Authority
- JP
- Japan
- Prior art keywords
- optical system
- projection optical
- exposure
- image
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、第１の物体と第２の物
体とを移動させつつ露光を行なう走査型の投影露光装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning type projection exposure apparatus which performs exposure while moving a first object and a second object.
【０００２】[0002]
【従来の技術】近年、ワープロ、パソコン、テレビ等の
表示素子として、液晶表示パネルが多用されるようにな
った。液晶表示パネルは、ガラス基板上に透明薄膜電極
をフォトリソグラフィの手法で所望の形状にパターンニ
ングして作られる。このリソグラフィのための装置とし
て、マスク上に形成された原画パターンを投影光学系を
介してガラス基板上のフォトレジスト層に露光するミラ
ープロジェクションタイプのアライナーが使われてい
る。このようなアライナーとしては、例えば図１４(a),
(b) に示すものが知られている。図１４(a) は、従来の
アライナーの構成を示す斜視図であり、図１４(b) は、
アライナーの投影光学系のレンズ断面図である。2. Description of the Related Art In recent years, liquid crystal display panels have been widely used as display elements for word processors, personal computers, televisions and the like. A liquid crystal display panel is manufactured by patterning a transparent thin film electrode on a glass substrate into a desired shape by a photolithography technique. As a device for this lithography, a mirror projection type aligner is used which exposes an original pattern formed on a mask onto a photoresist layer on a glass substrate through a projection optical system. An example of such an aligner is shown in FIG.
The one shown in (b) is known. FIG. 14 (a) is a perspective view showing the structure of a conventional aligner, and FIG. 14 (b) is
It is a lens sectional view of the projection optical system of the aligner.
【０００３】図１４(a) において、図示なき照明光学系
によりマスク７１ｃが円弧状の照野７２ａにて照明され
る。この照野７２ａの像７２ｂは、図１４(b) に示す如
く、台形ミラー７３の反射面７３ａにて光路が９０°偏
向され、凹面鏡７４及び凸面鏡７５を介して、再び凹面
鏡７４にて反射される。凹面鏡７４からの光は、台形ミ
ラー７３の反射面７３ｂにて光路が９０°偏向され、プ
レート７６上にマスク７１ｃの像を形成する。そして、
このアライナーにおいては、プレート７６とマスク７１
ｃとを走査露光する、即ち図中Ｘ方向に沿って移動させ
つつ露光を行なうことで、マスク７１ｃ上の回路パター
ンをプレート７６上に転写していた。In FIG. 14 (a), the mask 71c is illuminated by an arc-shaped illumination field 72a by an illumination optical system (not shown). As shown in FIG. 14 (b), the image 72b of the illumination field 72a has its optical path deflected 90 ° by the reflecting surface 73a of the trapezoidal mirror 73, and is reflected again by the concave mirror 74 via the concave mirror 74 and the convex mirror 75. It The light from the concave mirror 74 has its optical path deflected by 90 ° at the reflecting surface 73b of the trapezoidal mirror 73, and forms an image of the mask 71c on the plate 76. And
In this aligner, the plate 76 and the mask 71
The circuit pattern on the mask 71c is transferred onto the plate 76 by scanning and exposing c and c, that is, by performing exposure while moving in the X direction in the figure.
【０００４】最近、液晶表示パネルの大型化が望まれて
いる。それに伴い、上述の如きアライナーにおいても、
露光領域の拡大が望まれている。Recently, it has been desired to increase the size of the liquid crystal display panel. Along with that, even in the aligner as described above,
It is desired to expand the exposure area.
【０００５】[0005]
【発明が解決しようとする課題】上述の如き投影露光装
置において、露光領域を拡大させるためには、露光領域
を分割して露光していた。具体的には、図１４(a) に示
す如く、プレート７６上を領域７６ａ，７６ｂ，７６
ｃ，７６ｄに４分割して、まず、マスク７１ａと領域７
６ａとを走査露光して、領域７６ａ上にマスク７１ａの
回路パターンを転写する。次に、マスク７１ａをマスク
７１ｂに交換すると共に、投影光学系の露光領域と領域
７６ｂとが重なるように、プレート７６を図中ＸＹ平面
内でステップ的に移動させる。そして、マスク７１ｂと
プレート７６とを走査露光して、マスク７１ｂの回路パ
ターンを領域７６ｂ上に転写する。以下同様に、マスク
７１ｃ、７１ｄの回路パターンをそれぞれ領域７６ｃ、
７６ｄに転写していた。In the projection exposure apparatus as described above, in order to enlarge the exposure area, the exposure area is divided and exposed. Specifically, as shown in FIG. 14 (a), the plate 76 is provided with regions 76a, 76b, 76.
First, the mask 71a and the area 7 are divided into four parts, c and 76d.
6a and 6a are exposed by scanning to transfer the circuit pattern of the mask 71a onto the area 76a. Next, the mask 71a is replaced with the mask 71b, and the plate 76 is moved stepwise in the XY plane in the drawing so that the exposure area of the projection optical system and the area 76b overlap. Then, the mask 71b and the plate 76 are scanned and exposed to transfer the circuit pattern of the mask 71b onto the region 76b. Similarly, the circuit patterns of the masks 71c and 71d are set to the regions 76c and
It was transferred to 76d.
【０００６】このように、分割して露光を行なう場合に
は、多数回の露光を行なうため、スループット（単位時
間当たり露光できる基板の量）の低下を招いていた。さ
らに、分割露光の場合には、隣合う露光領域間の継ぎ精
度を高める必要がある。このため、投影露光装置におい
ては、投影光学系の倍率誤差を０に近づける必要がある
と共に、アライメント精度の大幅な向上が要求され、装
置のコスト高を招くという問題点がある。As described above, in the case of performing the divided exposure, since the exposure is performed many times, the throughput (the amount of the substrate that can be exposed per unit time) is lowered. Further, in the case of divided exposure, it is necessary to increase the joining accuracy between adjacent exposure areas. Therefore, in the projection exposure apparatus, it is necessary to bring the magnification error of the projection optical system close to 0, and it is required to greatly improve the alignment accuracy, which causes a problem of increasing the cost of the apparatus.
【０００７】また、大きな露光領域を一括して転写する
ために、投影光学系の大型化を図ることが考えられる。
しかしながら、投影光学系の大型化を図るためには、大
型な光学素子を非常に高精度に製作する必要があり、製
作コストの増大と装置の大型化とを招く問題点がある。
また、投影光学系の大型化により収差も増大する問題点
がある。Further, in order to collectively transfer a large exposure area, it is conceivable to increase the size of the projection optical system.
However, in order to increase the size of the projection optical system, it is necessary to manufacture a large-sized optical element with extremely high accuracy, which causes problems such as an increase in manufacturing cost and an increase in size of the apparatus.
In addition, there is a problem in that aberration increases as the projection optical system becomes larger.
【０００８】そこで、本発明は、露光領域が大きな場合
でも、スループットを低下させずに、良好な結像性能の
もとで回路パターンを転写できる露光装置を提供するこ
とを目的とする。Therefore, it is an object of the present invention to provide an exposure apparatus capable of transferring a circuit pattern with good imaging performance without lowering the throughput even when the exposure area is large.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明による露光装置は、以下の構成を有する。例
えば図１に示す如く、第１の物体と第２の物体とを移動
させつつ第１の物体の像を第２の物体上へ投影露光する
露光装置は、第１の物体の等倍の正立像を第２の物体上
に形成する第１及び第２の投影光学系を有する。そし
て、第１及び第２の投影光学系は、少なくとも像側がテ
レセントリックで構成される。In order to achieve the above object, an exposure apparatus according to the present invention has the following configuration. For example, as shown in FIG. 1, an exposure apparatus that projects and exposes an image of the first object onto a second object while moving the first object and the second object is an equal magnification of the first object. It has first and second projection optical systems for forming a standing image on a second object. The first and second projection optical systems are telecentric on at least the image side.
【００１０】ここで、本発明において、正立像とは、上
下左右の横倍率が正となる像のことを指す。Here, in the present invention, the erect image refers to an image in which the lateral magnification in the vertical and horizontal directions is positive.
【００１１】[0011]
【作用】上述の如き本発明による露光装置においては、
複数の投影光学系を組み合わせる構成であるため、個々
の投影光学系の露光領域を大きくすることなく、大きな
露光領域を得ることができる。従って、投影光学系が小
型化されるため、高精度な投影光学系を容易に製造する
ことができる。また、投影光学系を構成する各光学部材
が小型であるため、絶対的な収差量の発生が減少する。
従って、良好な光学性能のもとで走査露光が実現でき
る。In the exposure apparatus according to the present invention as described above,
Since a plurality of projection optical systems are combined, a large exposure area can be obtained without increasing the exposure area of each projection optical system. Therefore, since the projection optical system is downsized, a highly accurate projection optical system can be easily manufactured. In addition, since each optical member forming the projection optical system is small, the amount of absolute aberration is reduced.
Therefore, scanning exposure can be realized with good optical performance.
【００１２】また、本発明による露光装置では、大きな
露光領域を一回の露光で得ることができるため、スルー
プットが高い利点がある。Further, in the exposure apparatus according to the present invention, since a large exposure area can be obtained by one exposure, there is an advantage of high throughput.
【００１３】[0013]
【実施例】以下、図面を参照して本発明による実施例を
説明する。図１は、本発明による露光装置の斜視図であ
る。なお、図１では、所定の回路パターンが設けられた
マスク８と、ガラス基板上にレジストが塗布されたプレ
ート９とが搬送される方向（走査方向）をＸ軸、マスク
８の平面内でＸ軸と直交する方向をＹ軸、マスク８の法
線方向をＺ軸とした座標系をとっている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of an exposure apparatus according to the present invention. In FIG. 1, the direction (scanning direction) in which the mask 8 provided with a predetermined circuit pattern and the plate 9 on which the resist is applied on the glass substrate is conveyed is the X axis, and X is in the plane of the mask 8. The coordinate system has a Y axis as a direction orthogonal to the axis and a Z axis as a normal direction of the mask 8.
【００１４】図１において、照明光学系１０による露光
光は、図中ＸＹ平面内のマスク８を均一に照明する。こ
の照明光学系１０としては、例えば図２に示す如き構成
のものが好適である。図２は、図１に示す照明光学系１
０の具体的な構成の一例を示す図である。図２におい
て、楕円鏡１０２の内部には、例えばｇ線(435nm) 、あ
るいはｉ線(365nm) の露光光を供給する水銀ランプ等の
光源が設けられており、この光源からの露光光は、楕円
鏡１０２により集光され、ライトガイド１０３の入射端
に光源像を形成する。ライトガイド１０３は、その射出
端１０３ａ、１０３ｂに均一な光強度分布の２次光源面
を形成する。尚、ライトガイド１０３は、ランダムに束
ねられた光ファイバーで構成されることが望ましい。In FIG. 1, the exposure light from the illumination optical system 10 uniformly illuminates the mask 8 in the XY plane in the figure. As the illumination optical system 10, for example, one having a configuration as shown in FIG. 2 is suitable. FIG. 2 shows the illumination optical system 1 shown in FIG.
It is a figure which shows an example of the specific structure of 0. In FIG. 2, a light source such as a mercury lamp that supplies exposure light of g-line (435 nm) or i-line (365 nm) is provided inside the elliptic mirror 102, and the exposure light from this light source is It is condensed by the elliptical mirror 102 and forms a light source image at the incident end of the light guide 103. The light guide 103 forms a secondary light source surface having a uniform light intensity distribution at its exit ends 103a and 103b. The light guide 103 is preferably composed of randomly bundled optical fibers.
【００１５】ライトガイド１０３から射出した光束は、
リレーレンズ１０４ａ、１０４ｂをそれぞれ介して、フ
ライアイレンズ１０５ｂに達する。これらのフライアイ
レンズ１０５ａ、１０５ｂの射出面側には、複数の２次
光源が形成される。複数の２次光源からの光は、２次光
源形成位置に前側焦点が位置するように設けられたコン
デンサレンズ１０６ａ、１０６ｂを介して、矩形状の開
口部１０７ａ、１０７ｂを有する視野絞り１０７を均一
に照明する。視野絞り１０７を介した露光光は、それぞ
れレンズ１０８ａ、１０８ｂを介して、ミラー１０９
ａ、１０９ｂによって光路が９０°偏向され、レンズ１
１０ａ、１１０ｂに達する。ここで、レンズ１０８ａ、
１１０ａとレンズ１０８ｂ、１１０ｂとは、視野絞り１
０８とマスク８とを共役にするリレー光学系であり、レ
ンズ１１０ａ、１１０ｂを介した露光光は、視野絞り１
０８の開口部１０８ａ、１０８ｂの像である照明領域１
１１ａ、１１１ｂを形成する。The luminous flux emitted from the light guide 103 is
The fly-eye lens 105b is reached via the relay lenses 104a and 104b. A plurality of secondary light sources are formed on the exit surface side of these fly-eye lenses 105a and 105b. Light from a plurality of secondary light sources is uniformly distributed through a field stop 107 having rectangular openings 107a and 107b via condenser lenses 106a and 106b provided so that the front focal points are located at the secondary light source formation positions. To illuminate. The exposure light that has passed through the field stop 107 passes through lenses 108a and 108b, respectively, and a mirror 109
The optical path is deflected by 90 ° by a and 109b, and the lens 1
Reach 10a, 110b. Here, the lens 108a,
110a and lenses 108b and 110b are the field stop 1
08 is a relay optical system in which the mask 08 and the mask 8 are conjugated, and the exposure light transmitted through the lenses 110a and 110b is the field stop 1
Illumination region 1 which is an image of the apertures 108a and 108b of 08
11a and 111b are formed.
【００１６】尚、視野絞り１０８の開口部１０８ａ，１
０８ｂの形状は、矩形状に限ることはない。この照明領
域の形状としては、投影光学系の視野の形状に可能な限
り相似であることが望ましい。また、図２においては、
説明を簡単にするために、照明領域１１１ｃ〜１１１ｇ
を形成する照明光学系は、その光軸のみを示している。
なお、図２では図示省略されているが、ライトガイド１
０３の射出端は、照明領域の数に対応して設けられてお
り、これらの照明領域１１１ｃ〜１１１ｇには、図示省
略したライトガイド１０３の射出端からの露光光が供給
される。The apertures 108a, 1 of the field stop 108 are provided.
The shape of 08b is not limited to a rectangular shape. It is desirable that the shape of this illumination region be as similar as possible to the shape of the visual field of the projection optical system. In addition, in FIG.
In order to simplify the explanation, the illumination areas 111c to 111g
The illuminating optical system that forms the optical axis shows only its optical axis.
Although not shown in FIG. 2, the light guide 1
The emission ends of 03 are provided corresponding to the number of illumination regions, and the exposure light from the emission end of the light guide 103 (not shown) is supplied to these illumination regions 111c to 111g.
【００１７】また、図２に示すように、１つの光源では
光量不足になる場合、図３に示すような構成を適用して
も良い。図３は、照明光学系の変形例の要部を模式的に
示す図であって、水銀ランプ等の光源２０１ａ〜２０１
ｃからの露光光は、楕円鏡２０２ａ〜２０２ｃにより集
光され、光源像を形成する。そして、この光源像形成位
置に入射端が位置するようにライトガイド２０３が設け
られており、ライトガイド２０３を介した露光光は、複
数の射出端２０３ａ〜２０３ｅに均一な光強度分布の２
次光源面を形成する。このライトガイド２０３も図２の
ライトガイド１０３と同じく光ファイバーをランダムに
束ねて構成されることが望ましい。射出端２０３ａ〜２
０３ｅからマスク８に至るまでの光路は、図２に示す照
明光学系と同じであるため、ここでは説明を省略する。Further, as shown in FIG. 2, when the light amount is insufficient with one light source, the structure shown in FIG. 3 may be applied. FIG. 3 is a diagram schematically showing a main part of a modified example of the illumination optical system, and includes light sources 201a to 201 such as a mercury lamp.
The exposure light from c is condensed by the elliptical mirrors 202a to 202c to form a light source image. The light guide 203 is provided so that the incident end is located at the light source image forming position, and the exposure light passing through the light guide 203 has a uniform light intensity distribution at the plurality of exit ends 203a to 203e.
The next light source surface is formed. It is desirable that the light guide 203 is also configured by randomly bundling optical fibers, like the light guide 103 of FIG. Injection ends 203a-2
Since the optical path from 03e to the mask 8 is the same as that of the illumination optical system shown in FIG. 2, description thereof is omitted here.
【００１８】なお、上述の如き複数の照明領域１１１ａ
〜１１１ｇを形成する複数の照明光学系の代わりに、走
査方向（Ｘ方向）と直交する方向（Ｙ方向）に延びた一
つの矩形状の領域でマスク８を照明する照明光学系を適
用しても良い。このような光学系としては、Ｙ方向に延
びた棒状の光源を用いたものが考えられる。さて、マス
ク８の下方には、複数の投影光学系２ａ〜２ｇが配置さ
れている。以下、図４を参照して投影光学系２ａ〜２ｇ
について説明する。なお、投影光学系２ａ〜２ｇは、そ
れぞれ同じ構成を有するため、説明を簡単にするために
投影光学系２ａのみについて述べる。The plurality of illumination areas 111a as described above are used.
In place of the plurality of illumination optical systems forming 111 g, an illumination optical system that illuminates the mask 8 with one rectangular region extending in the direction (Y direction) orthogonal to the scanning direction (X direction) is applied. Is also good. As such an optical system, a system using a rod-shaped light source extending in the Y direction can be considered. A plurality of projection optical systems 2a to 2g are arranged below the mask 8. Hereinafter, referring to FIG. 4, the projection optical systems 2a to 2g
Will be described. Since the projection optical systems 2a to 2g have the same configuration, only the projection optical system 2a will be described in order to simplify the description.
【００１９】図４は、投影光学系２ａのレンズ構成図で
あり、この投影光学系２ａは、２組のダイソン型光学系
を組み合わせた構成である。図４において、投影光学系
２ａは、第１部分光学系２１〜２４と、視野絞り２５
と、第２部分光学系２６〜２９とから構成されており、
これらの第１及び第２部分光学系は、それぞれダイソン
型光学系を変形したものである。FIG. 4 is a lens configuration diagram of the projection optical system 2a. This projection optical system 2a has a configuration in which two sets of Dyson type optical systems are combined. In FIG. 4, the projection optical system 2a includes a first partial optical system 21 to 24 and a field stop 25.
And the second partial optical systems 26 to 29,
Each of these first and second partial optical systems is a modification of the Dyson type optical system.
【００２０】第１部分光学系は、マスク８面に対して４
５°の傾斜で配置された反射面を持つ直角プリズム２１
と、マスク８の面内方向に沿った光軸を有し、凸面を直
角プリズム２１の反対側に向けた平凸レンズ成分２２
と、全体としてメニスカス形状であって凹面を平凸レン
ズ成分２２側に向けた反射面を有するレンズ成分２３
と、直角プリズム２１の反射面と直交しかつマスク８面
に対して４５°の傾斜で配置された反射面を持つ直角プ
リズム２４とを有する。The first partial optical system is 4 with respect to the mask 8 surface.
Right angle prism 21 having a reflecting surface arranged at an inclination of 5 °
And a plano-convex lens component 22 having an optical axis along the in-plane direction of the mask 8 and having a convex surface directed to the opposite side of the right-angle prism 21.
And a lens component 23 which has a meniscus shape as a whole and has a reflecting surface with the concave surface facing the plano-convex lens component 22 side.
And a right-angle prism 24 having a reflection surface which is orthogonal to the reflection surface of the right-angle prism 21 and is arranged at an inclination of 45 ° with respect to the mask 8 surface.
【００２１】そして、マスク８を介した照明光学系から
の光は、直角プリズム２１によって光路が９０°偏向さ
れ、直角プリズム２１に接合された平凸レンズ成分２２
に入射する。このレンズ成分２２には、平凸レンズ成分
２２とは異なる硝材にて構成されたレンズ成分２３が接
合されており、直角プリズム２１からの光は、レンズ成
分２２、２３の接合面２２ａにて屈折し、反射膜が蒸着
された反射面２３ａに達する。反射面２３ａで反射され
た光は、接合面２２ａで屈折され、レンズ成分２２に接
合された直角プリズム２４に達する。レンズ成分２２か
らの光は、直角プリズム２４により光路が９０°偏向さ
れて、この直角プリズム２４の射出面側に、マスク８の
１次像を形成する。ここで、第１部分光学系２１〜２４
が形成するマスク８の１次像は、Ｘ方向（光軸方向）の
横倍率が正であり、かつＹ方向の横倍率が負となる等倍
像である。The light path from the illumination optical system via the mask 8 is deflected by 90 ° by the right-angle prism 21, and the plano-convex lens component 22 joined to the right-angle prism 21.
Incident on. A lens component 23 made of a glass material different from that of the plano-convex lens component 22 is cemented to the lens component 22, and light from the right-angle prism 21 is refracted at a cemented surface 22a of the lens components 22 and 23. , Reaches the reflection surface 23a on which the reflection film is deposited. The light reflected by the reflecting surface 23 a is refracted by the cemented surface 22 a and reaches the rectangular prism 24 cemented to the lens component 22. The light path from the lens component 22 is deflected by 90 ° by the right-angle prism 24, and a primary image of the mask 8 is formed on the exit surface side of the right-angle prism 24. Here, the first partial optical systems 21 to 24
The primary image of the mask 8 formed by is a unity-magnification image in which the lateral magnification in the X direction (optical axis direction) is positive and the lateral magnification in the Y direction is negative.
【００２２】１次像からの光は、第２部分光学系２６〜
２９を介して、マスク８の２次像をプレート９上に形成
する。なお、第２部分光学系の構成は、第１部分光学系
と同一であるため説明を省略する。この第２部分光学系
２６〜２９は、第１部分光学系と同じく、Ｘ方向が正か
つＹ方向が負となる横倍率の等倍像を形成する。よっ
て、プレート９上に形成される２次像は、マスク８の等
倍の正立像（上下左右方向の横倍率が正となる像）とな
る。ここで、投影光学系２ａ（第１及び第２部分光学
系）は、両側テレセントリック光学系である。The light from the primary image is transmitted through the second partial optical system 26-
A secondary image of the mask 8 is formed on the plate 9 via 29. The configuration of the second partial optical system is the same as that of the first partial optical system, and thus the description thereof is omitted. Like the first partial optical system, the second partial optical systems 26 to 29 form a lateral magnification unity-magnification image in which the X direction is positive and the Y direction is negative. Therefore, the secondary image formed on the plate 9 is an erect image of the mask 8 at an equal magnification (an image in which the lateral magnification in the vertical and horizontal directions is positive). Here, the projection optical system 2a (first and second partial optical systems) is a double-sided telecentric optical system.
【００２３】なお、上述の第１及び第２部分光学系は、
反射面２３ａ，２８ａが共に同じ向きとなるように構成
されている。これにより、投影光学系全体の小型化を図
ることができる。本実施例による第１及び第２部分光学
系は、平凸レンズ成分２２，２７と、反射面２３ａ，２
８ａとの間の光路中を硝材で埋める構成となっている。
これにより、平凸レンズ成分２２，２７と反射面２３
ａ，２８ａとの偏心が生じない利点がある。The first and second partial optical systems described above are
The reflecting surfaces 23a and 28a are configured to have the same orientation. This makes it possible to reduce the size of the entire projection optical system. The first and second partial optical systems according to the present embodiment include plano-convex lens components 22 and 27 and reflecting surfaces 23a and 2a.
The optical path between 8a and 8a is filled with a glass material.
Thereby, the plano-convex lens components 22 and 27 and the reflecting surface 23
There is an advantage that eccentricity with a and 28a does not occur.
【００２４】また、図５に示すように、第１及び第２部
分光学系は、平凸レンズ成分２２，２７と反射面２３
ａ，２８ａとの間を空気とする、いわゆるダイソン型光
学系そのものの構成でも良い。なお、このようなダイソ
ン型光学系に関しては、J.O.S.A.vol.49 (1959年発行)
のP713〜P716に詳述されている。さて、本実施例におい
ては、第１部分光学系が形成する１次像の位置に、視野
絞り２５を配置している。視野絞り２５は、例えば図６
(a) に示す如き台形状の開口部を有する。この視野絞り
２５により、プレート９上の露光領域が台形状に規定さ
れる。ここで、図６(b) に破線で示すように、本実施例
におけるダイソン型光学系において、レンズ成分２２、
２３、２７、２８の断面（ＹＺ平面）形状が円形である
ため、取り得る最大の視野の領域がほぼ半円形状とな
る。このとき、視野絞り２５にて規定される台形状の視
野領域８ａは、一対の平行辺のうちの短辺が半円状の領
域（最大の視野の領域）の円弧側を向くことが好まし
い。これにより、ダイソン型光学系の取り得る最大の視
野領域に対して、視野領域の走査方向（Ｘ方向）の幅を
最大とすることができ、走査速度を向上させることが可
能となる。Further, as shown in FIG. 5, the first and second partial optical systems include plano-convex lens components 22 and 27 and a reflecting surface 23.
A so-called Dyson type optical system itself, in which air is provided between a and 28a, may be used. Regarding such Dyson type optical system, JOSA vol.49 (issued in 1959)
P713 to P716. By the way, in this embodiment, the field stop 25 is arranged at the position of the primary image formed by the first partial optical system. The field stop 25 is, for example, as shown in FIG.
It has a trapezoidal opening as shown in (a). The field stop 25 defines a trapezoidal exposure area on the plate 9. Here, as shown by the broken line in FIG. 6B, in the Dyson type optical system in the present embodiment, the lens component 22,
Since the cross-sections (YZ plane) of 23, 27, and 28 are circular, the area of the maximum possible field of view is substantially semicircular. At this time, it is preferable that the trapezoidal field area 8a defined by the field diaphragm 25 faces the arc side of the area where the short side of the pair of parallel sides is semicircular (the area of the maximum field of view). This makes it possible to maximize the width of the visual field area in the scanning direction (X direction) with respect to the maximum visual field area that can be taken by the Dyson type optical system, and to improve the scanning speed.
【００２５】また、視野絞り２５としては、図６(c) に
示すように、六角形状の開口部を有する構成であっても
良い。このとき、図６(d) に示す如く、六角形状の開口
部の大きさは、図中破線で示される最大視野領域の範囲
内となる。なお、図６(b) 及び図６(d) に破線にて示す
最大視野領域は、第１及び第２部分光学系をケラれなく
通過する軸外光束のうち、最も外側を通過する光束がマ
スク８上で通過する点を囲む領域である。The field stop 25 may have a hexagonal opening as shown in FIG. 6 (c). At this time, as shown in FIG. 6D, the size of the hexagonal opening is within the range of the maximum visual field indicated by the broken line in the figure. In the maximum field of view shown by the broken lines in FIGS. 6B and 6D, among the off-axis light fluxes that pass through the first and second partial optical systems without vignetting, the light flux that passes the outermost one is It is a region surrounding points that pass on the mask 8.
【００２６】図１に戻って、投影光学系２ａ〜２ｇの配
置について説明する。図１においては、投影光学系２ａ
〜２ｇは、投影光学系内の視野絞りによって規定される
視野領域８ａ〜８ｇを有している。これらの視野領域８
ａ〜８ｇの像は、プレート９上の露光領域９ａ〜９ｇ上
に等倍の正立像として形成される。ここで、投影光学系
２ａ〜２ｄは、視野領域８ａ〜８ｄが図中Ｙ方向に沿っ
て配列されるように設けられている。また、投影光学系
２ｅ〜２ｇは、図中Ｘ方向で視野領域８ａ〜８ｄとは異
なる位置に、視野領域８ｅ〜８ｇがＹ方向に沿って配列
されるように設けられている。このとき、投影光学系２
ａ〜２ｄと、投影光学系２ｅ〜２ｇとは、それぞれが有
する直角プリズム同士が極近傍に位置するように設けら
れる。なお、Ｘ方向において、視野領域８ａ〜８ｄと視
野領域８ｅ〜８ｇとの間隔を広げるように投影光学系２
ａ〜２ｇを配置しても構わないが、このときには、走査
露光を行なうための走査量（マスク８とプレート９の移
動量）が増し、スループットの低下を招くため好ましく
ない。Returning to FIG. 1, the arrangement of the projection optical systems 2a to 2g will be described. In FIG. 1, the projection optical system 2a
.About.2g have visual field regions 8a to 8g defined by the visual field stop in the projection optical system. These visual field areas 8
The images a to 8g are formed on the exposure regions 9a to 9g on the plate 9 as erect images of the same size. Here, the projection optical systems 2a to 2d are provided so that the visual field regions 8a to 8d are arranged along the Y direction in the drawing. The projection optical systems 2e to 2g are provided at positions different from the visual field regions 8a to 8d in the X direction in the figure so that the visual field regions 8e to 8g are arranged along the Y direction. At this time, the projection optical system 2
The a to 2d and the projection optical systems 2e to 2g are provided such that the right-angle prisms of the a to 2d are located very close to each other. In addition, in the X direction, the projection optical system 2 is arranged so as to widen the distance between the visual field regions 8a to 8d and the visual field regions 8e to 8g.
Although a to 2 g may be arranged, in this case, the scanning amount (moving amount of the mask 8 and the plate 9) for performing scanning exposure increases, which causes a decrease in throughput, which is not preferable.
【００２７】プレート９上には、投影光学系２ａ〜２ｄ
によって、図中Ｙ方向に沿って配列された露光領域９ａ
〜９ｄが形成され、投影光学系２ｅ〜２ｇによって、露
光領域９ａ〜９ｄとは異なる位置にＹ方向に沿って配列
された露光領域９ｅ〜９ｇが形成される。これらの露光
領域９ａ〜９ｇは、視野領域８ａ〜８ｄの等倍の正立像
である。On the plate 9, projection optical systems 2a to 2d are provided.
The exposure areas 9a arranged along the Y direction in the figure.
9d to 9d are formed, and the projection optical systems 2e to 2g form exposure regions 9e to 9g arranged along the Y direction at positions different from the exposure regions 9a to 9d. These exposure regions 9a to 9g are erect images of the field regions 8a to 8d at the same magnification.
【００２８】ここで、マスク８は図示なきマスクステー
ジ上に載置されており、プレート９は、プレートステー
ジ６０上に載置されている。ここで、マスクステージと
プレートステージとは、図中Ｘ方向に同期して移動す
る。これにより、プレート９上には、照明光学系１０に
より照明されたマスク８の像が逐次転写され、所謂走査
露光が行なわれる。マスク８の移動により、視野領域８
ａ〜８ｇによるマスク８の全面の走査が完了すると、プ
レート９上の全面に渡ってマスク８の像が転写される。The mask 8 is placed on a mask stage (not shown), and the plate 9 is placed on a plate stage 60. Here, the mask stage and the plate stage move synchronously in the X direction in the figure. As a result, the images of the mask 8 illuminated by the illumination optical system 10 are sequentially transferred onto the plate 9, and so-called scanning exposure is performed. By moving the mask 8, the visual field area 8
When the scanning of the entire surface of the mask 8 with a to 8 g is completed, the image of the mask 8 is transferred over the entire surface of the plate 9.
【００２９】プレートステージ６０上には、Ｙ軸に沿っ
た反射面を有する反射部材６１と、Ｘ軸に沿った反射面
を有する反射部材６２とが設けられている。また、露光
装置本体側には、干渉計として、例えばＨｅ−Ｎｅ(633
nm) 等のレーザ光を供給するレーザ光源６３、レーザ光
源６３からのレーザ光をＸ方向測定用のレーザ光とＹ方
向測定用のレーザ光とに分割するビームスプリッタ６
４、ビームスプリッタ６４からのレーザ光を反射部材６
１へ投射するためのプリズム６５及びビームスプリッタ
６４からのレーザ光を反射部材６２上の２点へ投射する
ためのプリズム６６、６７が設けられている。これによ
り、ステージのＸ方向の位置、Ｙ方向の位置及びＸＹ平
面内での回転を検出することができる。なお、図１にお
いては、反射部材６１、６２にて反射されたレーザ光と
参照用レーザ光とを干渉させた後に検出する検出系につ
いて図示省略している。A reflecting member 61 having a reflecting surface along the Y axis and a reflecting member 62 having a reflecting surface along the X axis are provided on the plate stage 60. Further, on the exposure apparatus main body side, as an interferometer, for example, He-Ne (633
a laser light source 63 for supplying laser light such as (nm) and a beam splitter 6 for splitting the laser light from the laser light source 63 into laser light for X-direction measurement and laser light for Y-direction measurement.
4. Reflecting member 6 for reflecting the laser light from beam splitter 64
There are provided a prism 65 for projecting light onto the No. 1 and prisms 66 and 67 for projecting laser light from the beam splitter 64 onto two points on the reflecting member 62. Thereby, the position of the stage in the X direction, the position in the Y direction, and the rotation in the XY plane can be detected. Note that, in FIG. 1, a detection system for detecting after the laser light reflected by the reflecting members 61 and 62 and the reference laser light are interfered with each other is not shown.
【００３０】次に、図７を参照して本実施例による視野
領域の配置について説明する。図７は、投影光学系２ａ
〜２ｇによる視野領域８ａ〜８ｇと、マスク８との平面
的な位置関係を示す図である。図７において、マスク８
上には、回路パターンＰＡが形成されており、この回路
パターンＰＡの領域を囲むように遮光部ＬＳＡが設けら
れている。図２に示される照明光学系は、図中破線にて
囲まれる照明領域１１１ａ〜１１１ｇを均一に照明す
る。この照明領域１１１ａ〜１１１ｇ内には、前述の視
野領域８ａ〜８ｇが配列されている。これらの視野領域
８ａ〜８ｇは、投影光学系２ａ〜２ｇ内の視野絞りによ
り、その形状がほぼ台形状となる。ここで、視野領域８
ａ〜８ｄの上辺（一対の平行な辺のうちの短辺）と、視
野領域８ｅ〜８ｇの上辺（一対の平行な辺のうちの短
辺）とが対向するように配列されている。ここで、遮光
部ＬＳＡに沿った視野領域８ａ及び８ｄの形状は、遮光
部ＬＳＡ側の斜辺（一対の平行な辺以外の辺）が回路パ
ターンＰＡの領域の縁と一致するように規定される。な
お、視野領域８ａ及び８ｄがマスク８の遮光部ＬＳＡと
重なるような形状でも良い。Next, the arrangement of the visual field areas according to this embodiment will be described with reference to FIG. FIG. 7 shows the projection optical system 2a.
It is a figure which shows the planar positional relationship between the visual field area | region 8a-8g by -2g, and the mask 8. In FIG. 7, the mask 8
The circuit pattern PA is formed on the upper side, and the light shielding portion LSA is provided so as to surround the area of the circuit pattern PA. The illumination optical system shown in FIG. 2 uniformly illuminates illumination areas 111a to 111g surrounded by broken lines in the figure. The above-described visual field regions 8a to 8g are arranged in the illumination regions 111a to 111g. These visual field regions 8a to 8g have a substantially trapezoidal shape due to the visual field stop in the projection optical systems 2a to 2g. Here, the visual field area 8
The upper sides of a to 8d (the short sides of the pair of parallel sides) and the upper sides of the visual field regions 8e to 8g (the short sides of the pair of parallel sides) are arranged so as to face each other. Here, the shapes of the visual field regions 8a and 8d along the light shielding portion LSA are defined such that the oblique sides (sides other than the pair of parallel sides) on the light shielding portion LSA side coincide with the edges of the area of the circuit pattern PA. . It should be noted that the field areas 8a and 8d may be shaped so as to overlap the light shielding portion LSA of the mask 8.
【００３１】本実施例においては、投影光学系２ａ〜２
ｇが両側テレセントリック光学系であるため、ＸＹ平面
内において、投影光学系２ａ〜２ｇが占める領域が、そ
れぞれ視野領域８ａ〜８ｇの占める領域よりも大きくな
る。従って、視野領域８ａ〜８ｄの配列は、それぞれの
領域８ａ〜８ｄの間で間隔を持つように構成せざるを得
ない。この場合、視野領域８ａ〜８ｄのみを用いて走査
露光を行なうならば、視野領域８ａ〜８ｄの間のマスク
８上の領域をプレート９上に投影転写することができな
い。そこで、本実施例においては、視野領域８ａ〜８ｄ
の間の領域について走査露光を行なうために、投影光学
系２ｅ〜２ｇによって視野領域８ｅ〜８ｇを設けるよう
に構成している。In this embodiment, the projection optical systems 2a-2
Since g is a double-sided telecentric optical system, the areas occupied by the projection optical systems 2a to 2g in the XY plane are larger than the areas occupied by the visual field areas 8a to 8g, respectively. Therefore, the visual field regions 8a to 8d must be arranged such that there is a space between the respective regions 8a to 8d. In this case, if scanning exposure is performed using only the visual field regions 8a to 8d, the region on the mask 8 between the visual field regions 8a to 8d cannot be projected and transferred onto the plate 9. Therefore, in this embodiment, the visual field regions 8a to 8d are provided.
In order to perform scanning exposure for the area between the two, the projection optical systems 2e to 2g are provided to provide the visual field areas 8e to 8g.
【００３２】このとき、走査方向（Ｘ方向）に沿った視
野領域８ａ〜８ｇ（または露光領域９ａ〜９ｇ）の幅の
総和が、どのＹ方向の位置においても常に一定となるこ
とが望ましい。以下、図８を参照して説明する。図８
(a),(b) は、プレート９上のＹ方向に関する露光量の分
布を示すものであり、縦軸に露光量Ｅ、横軸にプレート
９のＹ方向の位置をとっている。図８(a)において、プ
レート９上には、台形状の露光領域９ａ〜９ｇのそれぞ
れに対応する露光量分布９０ａ〜９０ｇが得られる。こ
こで、走査露光するにあたって、露光領域９ａ〜９ｇの
Ｘ方向の幅の和が一定となるように規定されているた
め、露光領域９ａ〜９ｇの重なる領域に関しては常に同
じ露光量となる。例えば、露光領域９ａに対応する露光
量分布９０ａと、露光領域９ｅに対応する露光量分布９
０ｅとの重なる領域に関しては、露光領域９ａのＸ方向
の幅と露光領域９ｅのＸ方向の幅との和が一定であるた
め、この重なる領域の露光量の和は、重ならない領域の
露光量と同じ露光量となる。従って、プレート９上に
は、全面にわたって均一な露光量分布９１が得られるこ
とになる。なお、上述の説明では、露光領域が台形状で
ある場合について説明しているが、均一な露光量分布を
得るための露光領域の組合せは、台形状に限られない。
例えば、図６(c) に示す如き視野絞り２５によって、六
角形状の露光領域が複数形成される場合、各露光領域の
走査方向の幅が常に一定となるように、各露光領域を規
定する。これにより、プレート９上の全面にわたって均
一な露光量分布を得ることができる。At this time, it is desirable that the total sum of the widths of the visual field regions 8a to 8g (or the exposure regions 9a to 9g) along the scanning direction (X direction) is always constant at any position in the Y direction. This will be described below with reference to FIG. Figure 8
(a) and (b) show the distribution of the exposure amount in the Y direction on the plate 9, where the vertical axis represents the exposure amount E and the horizontal axis represents the position of the plate 9 in the Y direction. In FIG. 8A, exposure amount distributions 90a to 90g corresponding to the trapezoidal exposure regions 9a to 9g are obtained on the plate 9. Here, in scanning exposure, since the sum of the widths of the exposure regions 9a to 9g in the X direction is defined to be constant, the exposure amount is always the same in the overlapping regions of the exposure regions 9a to 9g. For example, the exposure amount distribution 90a corresponding to the exposure region 9a and the exposure amount distribution 9 corresponding to the exposure region 9e
Regarding the area overlapping with 0e, the sum of the width of the exposure area 9a in the X direction and the width of the exposure area 9e in the X direction is constant, and therefore the sum of the exposure amounts of the overlapping areas is the exposure amount of the non-overlapping areas. The same exposure amount as. Therefore, on the plate 9, a uniform exposure amount distribution 91 is obtained over the entire surface. In the above description, the case where the exposure region has a trapezoidal shape has been described, but the combination of exposure regions for obtaining a uniform exposure amount distribution is not limited to the trapezoidal shape.
For example, when a plurality of hexagonal exposure areas are formed by the field stop 25 as shown in FIG. 6C, each exposure area is defined so that the width of each exposure area in the scanning direction is always constant. As a result, a uniform exposure dose distribution can be obtained over the entire surface of the plate 9.
【００３３】次に、図９を参照して、本実施例における
投影光学系の望ましき配置関係について説明する。図９
は、投影光学系の配置を説明するための平面図であり、
投影光学系Ｄ1,Ｄ2,Ｄ3 をマスク８側（物体側）から見
た状態を示す。図９において、投影光学系Ｄ1 は、平凸
レンズ成分Ｌ1 と凹面鏡Ｍ1 とから構成され、投影光学
系Ｄ2 は、平凸レンズ成分Ｌ2 と凹面鏡Ｍ2 とから構成
され、投影光学系Ｄ3は、平凸レンズ成分Ｌ3 と凹面鏡
Ｍ3 とから構成される。ここで、各投影光学系Ｄ1,Ｄ2,
Ｄ3 の構成は、共に同じである。なお、図９では、説明
を簡単にするために、各投影光学系Ｄ1,Ｄ2,Ｄ3 の光路
は、物体から凹面鏡（反射鏡）Ｍ1,Ｍ2,Ｍ3 へ向かう光
路のみを示し、光路をＺ方向に偏向させる直角プリズム
は図示省略している。Next, with reference to FIG. 9, a desired arrangement relationship of the projection optical system in the present embodiment will be described. Figure 9
Is a plan view for explaining the arrangement of the projection optical system,
The projection optical systems D 1 , D 2 , and D 3 are viewed from the mask 8 side (object side). In FIG. 9, the projection optical system D 1 is composed of a plano-convex lens component L 1 and a concave mirror M 1, and the projection optical system D 2 is composed of a plano-convex lens component L 2 and a concave mirror M 2. 3 comprises a plano-convex lens component L 3 and a concave mirror M 3 . Here, each projection optical system D 1 , D 2 ,
The configurations of D 3 are the same. In FIG. 9, for the sake of simplicity, the optical paths of the projection optical systems D 1 , D 2 , and D 3 are only the optical paths from the object to the concave mirrors (reflecting mirrors) M 1 , M 2 , and M 3 . A right-angle prism for deflecting the optical path in the Z direction is not shown.
【００３４】さて、投影光学系Ｄ1 の取り得る最大の視
野領域のＹ方向の幅をφF1、投影光学系Ｄ2 の取り得る
最大の視野領域のＹ方向の幅をφF2、投影光学系Ｄ3 の
取り得る最大の視野領域のＹ方向の幅をφF3とする。こ
れらの視野領域のＹ方向の幅φF1〜φF3は、それぞれ図
６(b),(d) に破線で示す最大視野領域の半径方向の長さ
に対応する。Now, the width in the Y direction of the maximum visual field area that the projection optical system D 1 can take is φ F1 , and the maximum width of the visual field area that the projection optical system D 2 can take in the Y direction is φ F2 . The width in the Y direction of the maximum viewable area of D 3 is φ F3 . The widths φ F1 to φ F3 in the Y direction of these visual field regions correspond to the radial lengths of the maximum visual field region shown by the broken lines in FIGS. 6B and 6D, respectively.
【００３５】このとき、Ｙ方向に隣接して配置された投
影光学系Ｄ1,Ｄ3 の光軸間距離をＫとすると、At this time, if the distance between the optical axes of the projection optical systems D 1 and D 3 arranged adjacent in the Y direction is K,
【００３６】[0036]
【数１】 φF1／２＋φF2＋φF3／２＞Ｋ …（１） を満足することが望ましい。ここで、φF1＝φF2＝φF3
＝φF （ただし、φF ：各投影光学系の取り得る最大の
視野領域のＹ方向の幅）とすると、上記（１）式は、以
下の如く書換えることができる。[Equation 1] φ F1 / 2 + φ F2 + φ F3 / 2> K It is desirable to satisfy (1). Where φ F1 = φ F2 = φ F3
= Φ F (where φ F is the maximum width of the visual field in each projection optical system in the Y direction), the above equation (1) can be rewritten as follows.
【００３７】[0037]
【数２】 ２φF ＞Ｋ …（２） すなわち、各投影光学系の取り得る最大の視野領域のＹ
方向の幅は、各投影光学系のＹ方向における光軸間距離
の半分以上であることが望ましい。ここで、各投影光学
系の配置が上記（１）式または（２）式の範囲から外れ
る場合には、各視野領域がＹ方向で重ならない恐れがあ
るため好ましくない。2 φ F > K (2) That is, Y of the maximum field of view that can be taken by each projection optical system.
The width in the direction is preferably half or more of the distance between the optical axes in the Y direction of each projection optical system. Here, if the arrangement of the projection optical systems is out of the range of the formula (1) or the formula (2), it is not preferable because the visual field regions may not overlap in the Y direction.
【００３８】また、平凸レンズ成分Ｌ1 〜Ｌ3 の直径
（Ｙ方向の長さ）をφL1〜φL3、凹面鏡Ｍ1 〜Ｍ3 の直
径（Ｙ方向の長さ）をφM1〜φM3とし、これらの直径の
なかで大きい方の直径（即ち、投影光学系Ｄ1,Ｄ2,Ｄ3
の外径の最大値）をφD1〜φD3とする。ここで、各投影
光学系Ｄ1,Ｄ2,Ｄ3 の構成が共に同じであるため、Further, the diameters (lengths in the Y direction) of the plano-convex lens components L 1 to L 3 are φ L1 to φ L3 , and the diameters (lengths in the Y direction) of the concave mirrors M 1 to M 3 are φ M1 to φ M3. And the larger one of these diameters (that is, the projection optical systems D 1 , D 2 , D 3
The maximum outside diameter of) is φ D1 to φ D3 . Since the projection optical systems D 1 , D 2 , and D 3 have the same configuration,
【００３９】[0039]
【数３】 φL1＝φL2＝φL3、 φM1＝φM2＝φM3、 φD1＝φD2＝φD3＝φD 、 がそれぞれ成立する。このとき、各投影光学系の取り得
る最大の視野領域のＹ方向の幅をφF とすると、[Formula 3] φ L1 = φ L2 = φ L3 , φ M1 = φ M2 = φ M3 , φ D1 = φ D2 = φ D3 = φ D , respectively. At this time, if the width in the Y direction of the maximum viewable area of each projection optical system is φ F ,
【００４０】[0040]
【数４】 φF ＞φD ／２ …（４） を満足することが望ましい。ここで、各投影光学系Ｄ1
〜Ｄ3 が上記（４）式を満足しない、即ち、各投影光学
系の取り得る最大の視野領域のＹ方向の幅φF が各投影
光学系の外径の最大値φD の半分以上でない場合には、
Ｙ方向に隣接して配置された投影光学系Ｄ1,Ｄ3 が互い
に干渉する恐れがあるため好ましくない。尚、投影光学
系の外径の最大値が光路を９０°偏向させる直角プリズ
ムにより定まるときには、上記外径の最大値φD を直角
プリズムのＹ方向の長さとすれば良い。また、上記
（１）式〜（４）式の関係は、ダイソン型光学系に限る
ことなく、オフナー型光学系にも適用できる。## EQU4 ## It is desirable to satisfy φ F > φ D / 2 (4). Here, each projection optical system D 1
˜D 3 does not satisfy the above equation (4), that is, the width φ F of the maximum viewable area of each projection optical system in the Y direction is not more than half the maximum value φ D of the outer diameter of each projection optical system. in case of,
The projection optical systems D 1 and D 3 arranged adjacent to each other in the Y direction may interfere with each other, which is not preferable. When the maximum value of the outer diameter of the projection optical system is determined by the rectangular prism that deflects the optical path by 90 °, the maximum value φ D of the outer diameter may be the length of the rectangular prism in the Y direction. Further, the relationships of the above expressions (1) to (4) are applicable not only to the Dyson type optical system but also to the Offner type optical system.
【００４１】さて、上述の実施例では、投影光学系とし
て２組の光学系を組み合わせているが、その代わりに、
図１０及び図１１に示す光学系を適用しても良い。図１
０は、ダイソン型光学系の直角プリズムの代わりに、ダ
ハ面を持つ直角ダハプリズム３４を適用したものであ
る。図１０において、直角プリズム３１、平凸レンズ成
分３２及び反射面３３ａを持つレンズ成分３３は、それ
ぞれ図４に示す直角プリズム２１、平凸レンズ成分２２
及びレンズ成分３３と同一の機能を有するため、ここで
は説明を省略する。２組の直角プリズムを有するダイソ
ン型光学系では、光軸に沿った方向の横倍率が正とな
り、かつ光軸直交方向（物体面及び像面に沿った方向）
の横倍率が負となる像を形成する。図１０の如き直角ダ
ハプリズム３４を有するダイソン型光学系では、ダハ面
によって、物体面及び像面内での光軸直交方向（紙面垂
直方向）の像向きが逆転するため、光軸に沿った方向
（Ｘ方向）及び物体面及び像面内での光軸直交方向（Ｙ
方向）の横倍率が共に正となる正立像を形成できる。In the above embodiment, two sets of optical systems are combined as the projection optical system, but instead of this,
The optical system shown in FIGS. 10 and 11 may be applied. Figure 1
0 is a right-angled roof prism 34 having a roof surface, instead of the right-angled prism of the Dyson type optical system. 10, the right-angle prism 31, the plano-convex lens component 32, and the lens component 33 having the reflecting surface 33a are the right-angle prism 21 and the plano-convex lens component 22 shown in FIG. 4, respectively.
Since it has the same function as the lens component 33, the description thereof is omitted here. In the Dyson type optical system having two sets of right angle prisms, the lateral magnification in the direction along the optical axis is positive and the direction orthogonal to the optical axis (direction along the object plane and the image plane)
Forms an image with a negative lateral magnification of. In the Dyson type optical system having the right-angled roof prism 34 as shown in FIG. 10, the roof surface inverts the image direction in the direction orthogonal to the optical axis (the direction perpendicular to the paper surface) in the object plane and the image plane, so that the direction along the optical axis is reversed. (X direction) and the direction orthogonal to the optical axis in the object plane and image plane (Y
It is possible to form an erect image in which the lateral magnification in both directions is positive.
【００４２】図１１は、光路を折り返すための反射面を
設けたダイソン型光学系の一例のレンズ構成図である。
図１１において、マスク８からの光は、光の入射方向
（Ｚ軸方向）に対して４５°に斜設された半反射面４１
ａによって、光路が９０°偏向されて、平凸レンズ成分
４２に入射する。なお、図１１に示す平凸レンズ成分４
２及び平凸レンズ成分４２に接合されるレンズ成分４３
は、それぞれ図４の平凸レンズ成分２２及びレンズ成分
２３と同一の機能を有する。FIG. 11 is a lens configuration diagram of an example of a Dyson type optical system provided with a reflecting surface for turning back the optical path.
In FIG. 11, the light from the mask 8 is a semi-reflecting surface 41 that is obliquely provided at 45 ° with respect to the light incident direction (Z-axis direction).
The optical path is deflected by 90 ° by a and enters the plano-convex lens component 42. The plano-convex lens component 4 shown in FIG.
2 and the lens component 43 cemented to the plano-convex lens component 42
Have the same functions as the plano-convex lens component 22 and the lens component 23 of FIG. 4, respectively.
【００４３】そして、平凸レンズ成分４２に入射した光
は、反射面４３ａにて反射され、再び平凸レンズ成分４
２を介して、平凸レンズ成分４２の射出側にマスク８の
１次像を形成する。この１次像形成位置には、反射面４
１ｂが設けられている。ここで、半反射面４１ａと反射
面４１ｂとは、反射部材４１に設けられている。そし
て、反射面４１ｂ上の１次像からの光は、もとの光路を
逆進して、平凸レンズ成分４２及びレンズ成分４３を介
した後、半反射面４１ａを透過する。半反射面４１ａの
透過方向には、光線の入射方向（透過方向）に対して１
１２．５°で斜設された反射面４４ａと、この反射面４
４ａに対して４５°で斜設された反射面４４ｂとを有す
る反射部材４４が設けられている。ここで、反射面４４
ａ，４４ｂがペンタプリズムの機能を有するため、この
反射部材４４に入射した光は、反射面４４ａ，４４ｂで
の反射により、光路が９０°偏向される。The light incident on the plano-convex lens component 42 is reflected by the reflecting surface 43a, and the plano-convex lens component 4 again.
A primary image of the mask 8 is formed on the exit side of the plano-convex lens component 42 via 2. At this primary image forming position, the reflecting surface 4
1b is provided. Here, the semi-reflective surface 41 a and the reflective surface 41 b are provided on the reflective member 41. Then, the light from the primary image on the reflecting surface 41b travels backward in the original optical path, passes through the plano-convex lens component 42 and the lens component 43, and then passes through the semi-reflecting surface 41a. The transmission direction of the semi-reflective surface 41a is 1 with respect to the incident direction (transmission direction) of the light beam.
The reflecting surface 44a obliquely installed at 12.5 ° and the reflecting surface 4
A reflecting member 44 having a reflecting surface 44b obliquely provided at 45 ° with respect to 4a is provided. Here, the reflective surface 44
Since a and 44b have the function of a pentaprism, the light incident on the reflection member 44 is reflected by the reflection surfaces 44a and 44b so that the optical path is deflected by 90 °.
【００４４】反射面４４ａ，４４ｂで反射された光は、
反射部材４４の射出側にマスク８の２次像を形成する。
ここで、この２次像は、等倍の正立像となる。なお、図
１１においては、マスク８から反射面４１ｂまでの光路
長と、反射面４１ｂからプレート９までの光路長とが等
しくなるように構成している。ここで、図１１に示す投
影光学系においては、反射面４１ｂの形状が視野絞りの
形状となる。例えば、ＹＺ平面内で短辺が紙面上側とな
る台形状の反射面４１ｂである場合には、視野領域及び
露光領域は、ＸＹ平面で紙面右側に短辺が位置する台形
状の領域となる。なお、図１１の投影光学系において、
平凸レンズ成分４２及びレンズ成分４３の光軸近傍を通
過する光束は、反射面４１ｂに達しないため結像に寄与
しない。しかしながら、半反射面４１ａから反射面４３
ａへ向かう光路と反射面４１ｂから反射面４３ａへ向か
う光路とが混じることを避けるため、平凸レンズ成分４
２及びレンズ成分４３の光軸上及びその近傍を通過する
光束を用いることは少ない。従って、図１１のように、
平凸レンズ成分４２及びレンズ成分４３の光軸近傍を通
過する光束が遮光されていても、実用上何ら差し支えは
ない。The light reflected by the reflecting surfaces 44a and 44b is
A secondary image of the mask 8 is formed on the exit side of the reflecting member 44.
Here, this secondary image becomes an erect image of equal size. In FIG. 11, the optical path length from the mask 8 to the reflecting surface 41b is equal to the optical path length from the reflecting surface 41b to the plate 9. Here, in the projection optical system shown in FIG. 11, the shape of the reflecting surface 41b is the shape of the field stop. For example, when the trapezoidal reflection surface 41b has the short side on the upper side of the paper in the YZ plane, the field-of-view area and the exposure area are trapezoidal areas where the short side is located on the right side of the paper on the XY plane. In addition, in the projection optical system of FIG.
The light flux passing near the optical axes of the plano-convex lens component 42 and the lens component 43 does not reach the reflection surface 41b and therefore does not contribute to image formation. However, from the semi-reflective surface 41a to the reflective surface 43
The plano-convex lens component 4 is included in order to avoid mixing of the optical path going to a and the optical path going from the reflecting surface 41b to the reflecting surface 43a.
It is rare to use a light flux that passes on the optical axis of 2 and the lens component 43 and in the vicinity thereof. Therefore, as shown in FIG.
Even if the light fluxes passing near the optical axes of the plano-convex lens component 42 and the lens component 43 are blocked, there is no practical problem.
【００４５】なお、図１０及び図１１に示す投影光学系
において、物体側と像側とを逆転させる構成であっても
良いことはいうまでもない。上述の如き図１１に示す投
影光学系では、ペンタプリズムと同様の機能を持つ２つ
の反射面４４ａ，４４ｂを適用していたが、その代わり
に、図１２に示す如く、光路折り返し用の反射面を２枚
の反射面で構成しても良い。図１２において、図１１の
投影光学系と異なる箇所は、Ｙ方向（紙面垂直方向）に
沿った稜線を持つダハ面を構成する２つの反射面５１
ｂ，５１ｃを光路折り返し用の反射面４１ｂの代わりに
設け、プレート９の面に対して４５に斜設された反射面
５４ａを２つの反射面４４ａ，４４ｂの代わりに設けた
点である。なお、図１２において、平凸レンズ成分５２
及び反射面５３ａを持つレンズ成分５３は、それぞれ図
１１の平凸レンズ成分４２及びレンズ成分４３と同一の
機能を有する。Needless to say, the projection optical system shown in FIGS. 10 and 11 may have a structure in which the object side and the image side are reversed. In the projection optical system shown in FIG. 11 as described above, the two reflecting surfaces 44a and 44b having the same function as the pentaprism are applied, but instead, as shown in FIG. May be composed of two reflecting surfaces. 12 is different from the projection optical system in FIG. 11 in that two reflecting surfaces 51 that form a roof surface having a ridge line along the Y direction (direction perpendicular to the paper surface).
b and 51c are provided in place of the reflecting surface 41b for folding the optical path, and a reflecting surface 54a obliquely provided at 45 with respect to the surface of the plate 9 is provided in place of the two reflecting surfaces 44a and 44b. In FIG. 12, the plano-convex lens component 52
The lens component 53 having the reflection surface 53a has the same function as the plano-convex lens component 42 and the lens component 43 of FIG.
【００４６】図１２において、マスク８からの光は、半
反射面５１ａにて光路が９０°偏向され、平凸レンズ成
分５２及びレンズ成分５３を介して反射面５１ｂ，５１
ｃに達し、マスク８の１次像を形成する。この１次像
は、反射面５１ｂ，５１ｃによりその上下が逆転され、
再び平凸レンズ成分５２及びレンズ成分５３を介して、
半反射面５１ａを透過する。半反射面５１ａを透過した
光は、反射面５４ａにて光路が９０°偏向され、反射部
材５４から射出し、マスク８の２次像を形成する。ここ
で、この２次像は、等倍の正立像となる。In FIG. 12, the light from the mask 8 has its optical path deflected by 90 ° on the semi-reflecting surface 51a, and passes through the plano-convex lens component 52 and the lens component 53 to the reflecting surfaces 51b, 51.
c, the primary image of the mask 8 is formed. This primary image is turned upside down by the reflecting surfaces 51b and 51c,
Again via the plano-convex lens component 52 and lens component 53,
The light passes through the semi-reflective surface 51a. The light passing through the semi-reflective surface 51a has its optical path deflected by 90 ° at the reflective surface 54a and exits from the reflective member 54 to form a secondary image of the mask 8. Here, this secondary image becomes an erect image of equal size.
【００４７】また、上記実施例では、等倍の正立像を得
る投影光学系として、平凸レンズ成分と凹面鏡とを持つ
ダイソン型光学系を適用しているが、投影光学系として
はダイソン型光学系に限られることはない。例えば、図
１３に示すように、凹面鏡、凸面鏡及び凹面鏡が順に配
列されたオフナー型光学系を適用することもできる。図
１３は、第１及び第２部分光学系として図１４(b) に示
すオフナー型光学系を適用したものであり、説明を簡単
にするために、図１４(b) に示す部材と同一の機能を有
する部材には、同じ符号を付してある。なお、図１３に
おいて、第１部分光学系が形成するマスク８の１次像形
成位置には、円弧形状の開口部を有する視野絞り２５が
設けられている。このような２組のオフナー型光学系に
よっても、両側（物体側及び像側）がテレセントリック
であり、物体の等倍の正立像を形成する投影光学系を得
ることができる。Further, in the above embodiment, the Dyson type optical system having the plano-convex lens component and the concave mirror is applied as the projection optical system for obtaining the erect image of the same magnification, but the projection optical system is the Dyson type optical system. It is not limited to. For example, as shown in FIG. 13, an Offner type optical system in which a concave mirror, a convex mirror, and a concave mirror are sequentially arranged can be applied. FIG. 13 is an application of the Offner type optical system shown in FIG. 14 (b) as the first and second partial optical systems, and in order to simplify the explanation, it is the same as the member shown in FIG. 14 (b). Members having a function are given the same reference numerals. In FIG. 13, a field diaphragm 25 having an arc-shaped opening is provided at the primary image forming position of the mask 8 formed by the first partial optical system. Even with such two sets of Offner type optical systems, both sides (the object side and the image side) are telecentric, and it is possible to obtain a projection optical system that forms an erect image of the same size of the object.
【００４８】以上から、等倍の正立像を得る投影光学系
としては、種々の構成を取り得ることが分かる。なお、
図１０に示す如き中間像（１次像）を形成しない投影光
学系や、図１２に示す如き中間像形成位置に視野絞りを
配置できない光学系においては、照明光学系による照明
領域の形状を所望の視野領域の形状と相似となるように
すれば良い。例えば、図２の照明光学系の視野絞り１０
７の開口部１０７ａ，１０７ｂの形状を台形状とすれ
ば、台形状の照明領域を得ることができる。From the above, it is understood that various configurations can be adopted as the projection optical system for obtaining an erect image of equal magnification. In addition,
In a projection optical system that does not form an intermediate image (primary image) as shown in FIG. 10 or an optical system in which a field stop cannot be arranged at the intermediate image forming position as shown in FIG. 12, the shape of the illumination area by the illumination optical system is desired. It may be similar to the shape of the field of view area. For example, the field stop 10 of the illumination optical system shown in FIG.
If the openings 107a and 107b of No. 7 have a trapezoidal shape, a trapezoidal illumination area can be obtained.
【００４９】このように、本実施例による露光装置によ
れば、複数の投影光学系によって、走査方向と直交する
幅が広い露光領域を形成しているため、個々の投影光学
系を大型化することなく、露光領域の大画面化に対応で
きる。ここで、本実施例では、投影光学系の大型化を招
かないため、比例拡大による収差の増大を防止できる利
点がある。As described above, according to the exposure apparatus of the present embodiment, since a plurality of projection optical systems form an exposure area having a wide width orthogonal to the scanning direction, each projection optical system is enlarged. Without increasing the size of the exposure area. Here, in this embodiment, since the projection optical system is not increased in size, there is an advantage that an increase in aberration due to proportional enlargement can be prevented.
【００５０】また、本実施例では、画面を継ぐことな
く、一回の露光で大画面の露光が実行できるため、スル
ープットの向上が図れる利点や画面の継ぎ目が無くなる
利点がある。Further, in the present embodiment, since exposure of a large screen can be executed by one exposure without connecting screens, there is an advantage that throughput can be improved and a screen joint can be eliminated.
【００５１】[0051]
【発明の効果】以上のように本発明によれば、露光領域
が大きな場合でも、スループットを低下させずに、回路
パターンを転写できる露光装置が提供できる。As described above, according to the present invention, it is possible to provide an exposure apparatus capable of transferring a circuit pattern without lowering the throughput even when the exposure area is large.
【図１】本発明の実施例の一例を示す斜視図である。FIG. 1 is a perspective view showing an example of an embodiment of the present invention.
【図２】本発明による露光装置に適用される照明光学系
の一例を示す斜視図である。FIG. 2 is a perspective view showing an example of an illumination optical system applied to the exposure apparatus according to the present invention.
【図３】照明光学系の変形例を模式的に示す図である。FIG. 3 is a diagram schematically showing a modified example of the illumination optical system.
【図４】本発明による露光装置に適用される投影光学系
のレンズ構成図である。FIG. 4 is a lens configuration diagram of a projection optical system applied to the exposure apparatus according to the present invention.
【図５】投影光学系の変形例を示すレンズ構成図であ
る。FIG. 5 is a lens configuration diagram showing a modified example of the projection optical system.
【図６】視野絞りの形状の説明するための平面図であ
る。FIG. 6 is a plan view for explaining the shape of a field stop.
【図７】投影光学系による視野領域とマスクとの平面的
な位置関係を示す図である。FIG. 7 is a diagram showing a planar positional relationship between a field area and a mask by a projection optical system.
【図８】プレート上の露光量分布を示す図である。FIG. 8 is a diagram showing an exposure dose distribution on a plate.
【図９】複数の投影光学系の配置関係を説明するための
平面図である。FIG. 9 is a plan view for explaining an arrangement relationship between a plurality of projection optical systems.
【図１０】投影光学系の変形例を示すレンズ構成図であ
る。FIG. 10 is a lens configuration diagram showing a modified example of the projection optical system.
【図１１】投影光学系の変形例を示すレンズ構成図であ
る。FIG. 11 is a lens configuration diagram showing a modified example of the projection optical system.
【図１２】投影光学系の変形例を示すレンズ構成図であ
る。FIG. 12 is a lens configuration diagram showing a modified example of the projection optical system.
【図１３】投影光学系としてオフナー型光学系を適用し
た場合のレンズ構成図である。FIG. 13 is a lens configuration diagram when an Offner type optical system is applied as a projection optical system.
【図１４】従来の露光装置の一例を示す斜視図である。FIG. 14 is a perspective view showing an example of a conventional exposure apparatus.
２ａ〜２ｇ…投影光学系、 ８…マスク、 ９…プレー
ト、１０…照明光学系、2a to 2g ... Projection optical system, 8 ... Mask, 9 ... Plate, 10 ... Illumination optical system,
Claims (6)
前記第１の物体の像を前記第２の物体上へ投影露光する
露光装置において、 前記第１の物体の等倍の正立像を前記第２の物体上に形
成する第１及び第２の投影光学系を有し、 前記第１及び第２の投影光学系は、少なくとも像側がテ
レセントリックで構成されることを特徴とする露光装
置。1. An exposure apparatus for projecting and exposing an image of the first object onto the second object while moving the first object and the second object, the exposure apparatus having a magnification equal to that of the first object. It has the 1st and 2nd projection optical system which forms an erect image on the said 2nd object, The said 1st and 2nd projection optical system is comprised at least in an image side by telecentricity, It is characterized by the above-mentioned. Exposure equipment.
射側に凹面を向けたレンズ面と、同じく光の入射側に凹
面を向けた反射面とを有するダイソン型光学系であるこ
とを特徴とする請求項１記載の露光装置。2. The first and second projection optical systems are Dyson type optical systems having a lens surface having a concave surface facing the light incident side and a reflecting surface having a concave surface facing the light incident side. The exposure apparatus according to claim 1, wherein the exposure apparatus is provided.
分光学系と第２部分光学系とを有し、前記第２部分光学
系は、前記第１部分光学系が形成する物体の１次像から
の光によって２次像を形成することを特徴とする請求項
１記載の露光装置。3. The first and second projection optical systems have a first partial optical system and a second partial optical system, and the second partial optical system is formed by the first partial optical system. The exposure apparatus according to claim 1, wherein a secondary image is formed by light from the primary image of the object.
光の入射側に凹面を向けた第１及び第２の反射面を有
し、該第１及び第２の反射面は、同一方向に凹面を向け
るように配置されることを特徴とする請求項３記載の露
光装置。4. The first and second partial optical systems have first and second reflecting surfaces with concave surfaces facing the light incident side, respectively, and the first and second reflecting surfaces are the same. The exposure apparatus according to claim 3, wherein the exposure apparatus is arranged so that a concave surface faces the direction.
成される位置には、視野絞りが配置されることを特徴と
する請求項３記載の露光装置。5. The exposure apparatus according to claim 3, wherein a field stop is arranged at a position where the primary image is formed by the first partial optical system.
し、該開口部によって定まる露光領域の移動方向におけ
る長さの和は、前記移動方向と直交する方向において常
に等しくなる如く規定されることを特徴とする請求項５
記載の露光装置。6. The field stop has an opening having a substantially trapezoidal shape, and the sum of the lengths in the moving direction of an exposure area defined by the opening is defined to be always equal in the direction orthogonal to the moving direction. 6. The method according to claim 5, wherein
The exposure apparatus described.
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16158893A JP3348467B2 (en) | 1993-06-30 | 1993-06-30 | Exposure apparatus and method |
| KR1019940015475A KR100319216B1 (en) | 1993-06-30 | 1994-06-30 | Exposure device |
| US08/453,538 US5729331A (en) | 1993-06-30 | 1995-05-30 | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US08/587,346 US6157497A (en) | 1993-06-30 | 1996-01-16 | Exposure apparatus |
| US09/173,530 US6351305B1 (en) | 1993-06-30 | 1998-10-15 | Exposure apparatus and exposure method for transferring pattern onto a substrate |
| US09/722,278 US6480262B1 (en) | 1993-06-30 | 2000-11-28 | Illumination optical apparatus for illuminating a mask, method of manufacturing and using same, and field stop used therein |
| US09/722,515 US6509954B1 (en) | 1993-06-30 | 2000-11-28 | Aperture stop having central aperture region defined by a circular ARC and peripheral region with decreased width, and exposure apparatus and method |
| US09/722,516 US6556278B1 (en) | 1993-06-30 | 2000-11-28 | Exposure/imaging apparatus and method in which imaging characteristics of a projection optical system are adjusted |
| US10/382,874 US6795169B2 (en) | 1993-06-30 | 2003-03-07 | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US10/920,294 US7023527B2 (en) | 1993-06-30 | 2004-08-18 | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US11/101,553 US7088425B2 (en) | 1993-06-30 | 2005-04-08 | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US11/471,658 US7372543B2 (en) | 1993-06-30 | 2006-06-21 | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US11/797,605 US7372544B2 (en) | 1993-06-30 | 2007-05-04 | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
| US12/078,863 US7956984B2 (en) | 1993-06-30 | 2008-04-07 | Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16158893A JP3348467B2 (en) | 1993-06-30 | 1993-06-30 | Exposure apparatus and method |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000369737A Division JP3348721B2 (en) | 2000-12-05 | 2000-12-05 | Lighting device and method |
| JP2000369736A Division JP2001201688A (en) | 2000-12-05 | 2000-12-05 | Exposure device, exposing method, illuminator and illuminating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0757986A true JPH0757986A (en) | 1995-03-03 |
| JP3348467B2 JP3348467B2 (en) | 2002-11-20 |
Family
ID=15737989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16158893A Expired - Lifetime JP3348467B2 (en) | 1993-06-30 | 1993-06-30 | Exposure apparatus and method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3348467B2 (en) |
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| JPH07183212A (en) * | 1993-11-11 | 1995-07-21 | Nikon Corp | Scanning aligner and method therefor |
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| EP0809814A1 (en) * | 1995-02-15 | 1997-12-03 | Ultratech Stepper Inc. | Arbitrarily wide lens array with an image field to span the width of a substrate |
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| JPH07183212A (en) * | 1993-11-11 | 1995-07-21 | Nikon Corp | Scanning aligner and method therefor |
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