JP2001154368A - Aligner and exposing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an aligner and an exposing method capable of obtaining high exposing accuracy and being applied to a wide exposing area. SOLUTION: In this aligner, the image of a pattern formed on a mask 1 is exposed to a substrate 8 by a projection optical system. The projection optical system is provided with a 1st optical system (a) forming the image of the pattern on an intermediate image-formation surface 16 between the pattern surface of the mask 1 and the image-formation surface of the substrate 8, and a 2nd optical system (b) forming the image of the pattern on the surface 16 on the image-formation surface of the substrate 8. The mask 1 and the substrate 8 are opposed nearly in parallel with each other, and the 1st and the 2nd optical systems (a) and (b) are arranged to be inclined to the mask 1 and the substrate 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an exposure apparatus and an exposure method, and more particularly to an exposure apparatus and an exposure method which have high exposure accuracy and can be applied to a wide exposure area.

[0002]

2. Description of the Related Art In recent years, liquid crystal display substrates have been frequently used in display devices for personal computers, televisions and the like. The liquid crystal display substrate is formed by patterning a transparent thin-film electrode on a glass substrate into a desired shape by a photolithography technique. As an apparatus for photolithography, a projection exposure apparatus for exposing an original pattern formed on a mask to a photoresist layer on a glass substrate via a projection optical system is used.

[0003] As a projection exposure apparatus, an exposure apparatus of a so-called step-and-repeat system or a mirror projection system is known.

Recently, a large area of a liquid crystal display substrate has been demanded, and accordingly, a projection exposure apparatus has been required to enlarge an exposure area. As an alternative to the conventional step-and-repeat type or mirror projection type exposure apparatus for enlarging the exposure area, there has been proposed an apparatus which includes a plurality of projection optical systems and performs scanning exposure. In this apparatus, for example, a plurality of illumination optical systems are provided to illuminate different areas on a mask with light beams emitted from the respective illumination optical systems, and images of the different areas are formed on a glass through each of the plurality of projection optical systems. The projection is performed on the projection area on the substrate.

More specifically, a light beam emitted from a light source is made uniform in light amount distribution through an optical system including a fly-eye lens and the like, and then formed into a desired shape by a field stop to form a light on a pattern surface of a mask. Light up. A plurality of illumination optical systems having such a configuration are arranged, and different small areas (illumination areas) on a mask are formed by light beams emitted from each of the plurality of illumination optical systems.
To illuminate. Light beams transmitted through the mask form pattern images of the mask on different projection regions on the glass substrate via different projection optical systems. Then, the entire surface of the pattern region on the mask is transferred onto the glass substrate by scanning the mask and the glass substrate synchronously with respect to the projection optical system.

[0006] As one that can be used as each of the above-described plurality of projection optical systems, there is known a projection optical system configured by combining two sets of Dyson-type optical systems. The projection optical system includes, for example, a first optical system that forms an image of a pattern on an intermediate image forming surface between a pattern surface of a mask and an image forming surface of a substrate, and a pattern image of the intermediate image forming surface on the substrate. A second optical system that forms an image on an image forming surface.

[0007]

When the resolution of the lenses used in each of the first optical system and the second optical system is relatively low, the distance between the pattern surface of the mask and the intermediate image plane and the intermediate image plane are determined. Since the distance between the substrate and the substrate can be increased, the first optical system and the second optical system can be generally arranged in two stages parallel to each other between the mask and the substrate opposed in parallel. . Therefore, in this case, there is not much restriction on the structure of the projection exposure system. However, high exposure accuracy cannot be expected because the resolution of each lens is low.

On the other hand, when the resolving power of the lens used in each of the first optical system and the second optical system is high, the distance between the pattern surface of the mask and the intermediate image forming surface and the distance between the intermediate image forming surface and the substrate are increased. Cannot be made too large, which may cause a structural limitation of the projection exposure system. For example, when the exposure area is to be enlarged, the pattern surface of the mask and the substrate must be arranged to be inclined with respect to each other.

As described above, in the case of the prior art, it is necessary to select either to increase the exposure accuracy by allowing a low exposure accuracy or to increase the exposure accuracy by allowing a narrow exposure region. .

It is therefore an object of the present invention to provide an exposure apparatus and an exposure method which have high exposure accuracy and can be applied to a wide exposure area. Other objects of the present invention will become clear from the following description.

[0011]

In the following description, in order to facilitate understanding, reference numerals shown in the drawings of the embodiments of the present invention are attached to respective constituent elements of the present invention. However, the present invention and its constituent elements are not limited to the embodiments of the invention specified by reference numerals.

According to the present invention, there is provided an exposure apparatus for projecting and exposing an image of a pattern formed on a mask (1) to a substrate (8) by a projection optical system. The projection optical system comprises: a first optical system (a) for forming an image of a pattern on an intermediate image plane (16) between the pattern plane of the mask (1) and the image plane of the substrate (8); A second optical system (b) for forming a pattern image on the imaging surface (16) on the imaging surface of the substrate (8). The mask (1) and the substrate (8) face substantially parallel. Further, the first optical system (a) and the second optical system (b) are arranged obliquely with respect to the mask (1) and the substrate (8).

According to another aspect of the present invention, a mask (1)
An exposure method for exposing the pattern formed on the substrate (8) to an intermediate image plane (16) between the pattern surface of the mask (1) and the image plane of the substrate (8). A first optical system (a) for forming an image and a second optical system (b) for forming the pattern image on the intermediate image forming surface (16) on the image forming surface of the substrate (8); An exposure method is provided, wherein the exposure method is arranged so as to be inclined with respect to the mask (1) and the substrate (8) which are substantially parallel to each other.

According to the exposure apparatus or the exposure method of the present invention, the first mask and the substrate which are substantially parallel to each other are firstly moved.
The optical system and the second optical system are arranged obliquely. When the mask and the substrate are opposed in parallel, the structural limitation of the projection optical system when the exposure area is to be enlarged is reduced, and the first optical system and the second optical system are moved with respect to the mask and the substrate. Even when a projection lens having a high resolution is used in each of the first optical system and the second optical system, a relatively small space is provided between the pattern surface of the mask and the substrate. First optical system and second optical system
An optical system can be accommodated. Therefore, according to the present invention, it is possible to provide an exposure apparatus and an exposure method which have high exposure accuracy and can be applied to a wide exposure area.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a perspective view schematically showing a scanning exposure apparatus according to an embodiment of the present invention. Referring to FIG. 1, an exposure apparatus 3 suitable for using a reticle (mask) 1 having a pattern area 2 (or a pattern surface) is shown. The reticle 1 is held by four reticle holders RH with respect to a support member 5 that provides a reference surface of the reticle 1.

A light beam emitted from a light source (not shown) such as an ultra-high pressure mercury lamp is formed into a desired shape by an illumination optical system 4A including a fly-eye lens, an illumination field stop, and the like. An image is formed. In this exposure apparatus, a plurality of components having the same configuration as the illumination optical system 4A are arranged, and the plurality of illumination optical systems 4A to 4E are provided.
Are illuminated on different small areas (illumination areas) M1 to M5 on the pattern area 2, respectively. The plurality of luminous fluxes transmitted through the pattern area 2 form pattern images of the illumination areas M1 to M5 on different projection areas P1 to P5 on the photosensitive substrate 8 via different projection optical systems 6A to 6E. Each of the projection optical systems 6A to 6E is, for example, a unity erect system. Note that the projection optical systems 6A to 6 in FIG.
E is simply shown, and its details are shown in FIG. 3 (details will be described later).

In the optical path between the projection optical systems 6A to 6E and the photosensitive substrate 8, parallel plate glasses 9A to 9E are disposed, respectively, and the optical axes L1A to L1E of the parallel plate glasses 9A to 9E.
Is changed, the optical axis of each projection optical system shifts, so that the projection position of the image on the photosensitive substrate 8 (the position of the projection areas P1 to P5) can be changed. Although not shown, magnification adjusting mechanisms for finely adjusting the size of an image on the photosensitive substrate 8 are provided in respective optical paths in the projection optical systems 6A to 6E.

Each of the projection areas P1 to P5 has a trapezoidal shape and, as shown in FIG. 2, extends along the Y direction (non-scanning direction).
Neighboring regions (for example, P1 and P2, P2 and P3)
Are displaced by a predetermined amount in the X direction (scanning direction) in the drawing, and the ends of the adjacent regions (ranges shown by broken lines) overlap in the Y direction (that is, in two rows along the Y direction). ) Is placed. Accordingly, the projection optical systems 6A to 6E are also displaced by a predetermined amount in the X direction according to the arrangement of the projection areas P1 to P5, and are arranged so as to overlap in the Y direction. Illumination optical system 4A
4E, the illumination area on the reticle 1 is projected area P
1 to P5. Then, the entire surface of the pattern area 2 of the reticle 1 is transferred to the exposure area on the photosensitive substrate 8 by scanning the projection optical systems 6A to 6E in the X direction in synchronization with the reticle 1 and the photosensitive substrate 8. You. In particular, in this embodiment, the reticle 1
The exposure apparatus 3 includes a support member 5 and a carriage 7 on which the photosensitive substrate 8 is mounted so that the scanning unit and the photosensitive substrate 8 can be integrally moved by scanning.

The supporting member 5 holding the reticle 1 by the reticle holder RH includes a driving device 10 such as a motor,
The drive can be performed in the X and Y directions in the drawing and the rotation direction (θ direction) with respect to the optical axis of the illumination optical system by means of 11 and 12. Thereby, the position of the reticle 1 in the X, Y, and θ directions can be adjusted.

A focus sensor 13B for detecting the inclination and the like of the reticle 1 is provided in cooperation with the light source 13A.
The light beam emitted from the light source 13A is reflected by the lower surface of the reticle 1, and the reflected beam is reflected by the focus sensor 13B.
Is received by the The focus sensor 1 detects the position of the photosensitive substrate 8 in the focal direction in cooperation with the light source 14A.
4B is provided. The light beam emitted from the light source 14A is reflected on the surface of the photosensitive substrate 8, and the reflected beam is received by the focus sensor 14B.

The reticle 1 and the photosensitive substrate 8 are provided with alignment marks MA1, MA2, MA3 and alignment marks PA1, PA2, PA3, respectively.
Alignment sensor 15 provided above reticle 1
A and 15B detect the position of each mark. The alignment sensors 15A and 15B are configured to detect alignment marks on the photosensitive substrate 8 via the reticle 1 and the projection optical systems 6A and 6E at both ends of the array. The relative positional relationship can be detected. Then, the positional deviation between the reticle 1 and the photosensitive substrate 8 in the X, Y directions and the rotational direction (θ direction) is obtained based on the detected relative positional relationship, and the driving device 1
By driving 0, 11 and 12, the reticle 1 and the photosensitive substrate 8 are positioned.

FIG. 3 shows a plurality of projection optical systems 6 shown in FIG.
FIG. 6 is a diagram showing an embodiment of a projection optical system that can be used as each of A to 6E. The projection optical system includes a first optical system a that forms an image of the pattern of the reticle 1 on an intermediate image forming surface 16 between the pattern surface of the reticle 1 and the image forming surface of the photosensitive substrate 8, and an intermediate image forming surface. And a second optical system b for forming the 16 pattern images on the image forming surface of the photosensitive substrate 8. The reticle 1 and the photosensitive substrate 8 face each other almost in parallel,
The first optical system a and the second optical system b are inclined with respect to the reticle 1 and the photosensitive substrate 8.

The first optical system a has a reflecting prism 17 composed of a triangular prism, a refractive optical system (or lens system) 18 composed of an aberration correcting lens group, and a concave mirror 19. The second optical system b has a reflecting prism 20 formed of a triangular prism, a refractive optical system (or lens system) 21 formed of an aberration correcting lens group, and a concave mirror 22.

Prior to describing the operation in the embodiment shown in FIG. 3, in order to clarify the superiority of the configuration, it is applicable to each of the plurality of projection optical systems 6A to 6E shown in FIG. A conventional projection optical system will be described with reference to FIG.

In the prior art shown in FIG. 4, two projection optical systems a 'and b' each having a Dyson configuration are arranged in parallel, and the reticle 1 and the photosensitive substrate 8 are scanned with respect to this projection optical system. It has been like that. The projection optical system a 'has a reflecting prism 17', a refractive optical system 18 'and a concave mirror 19', and the projection optical system b 'has a reflective prism 20', a refractive optical system 21 'and a concave mirror 22'. I have. The intermediate image plane 16 is located between the reflecting prisms 17 'and 20',
It is parallel to the reticle 1 and the photosensitive substrate 8.

When the resolving power of the projection lens as a component of the refractive optical systems 18 ′ and 21 ′ is relatively low, the optical distance from the refractive optical system 18 ′ to the reticle 1 and the intermediate image plane 16 and the refractive optical Even when the optical distance from the system 21 'to the intermediate imaging surface 16 and the photosensitive substrate 8 is relatively large, optical aberration can be suppressed, and the pupil diameter of the optical system is proportional to the resolving power. The diameters of the concave mirrors 19 'and 22', which are substantially proportional to the pupil diameter, can be made relatively small. For example, in a projection optical system that uses ultraviolet rays and has a resolution of about 3 μmL / S (line / space) or less, the distance between the reticle 1 and the intermediate imaging surface 16 is made larger than the diameter of the concave mirror 19 ′, and the intermediate imaging is performed. By making the distance between the surface 16 and the photosensitive substrate 8 larger than the diameter of the concave mirror 22 ', the projection optical systems a' and b 'can be arranged in two stages in parallel as shown in FIG.

However, for example, 3 μm
In a projection optical system having a resolution higher than about mL / S, it is necessary to reduce the distance between the reticle 1 and the intermediate imaging surface 16 and the distance between the intermediate imaging surface 16 and the photosensitive substrate 8 in order to suppress optical aberration. In addition, since the pupil diameter increases, the diameter of the concave mirrors 19 'and 22' must be increased. As a result, the projection optical systems a ′ and b ′ cannot be arranged in two stages in parallel, and the reticle 1 and the photosensitive substrate 8 must be arranged so as to be relatively inclined. In this case, for example, if the size of the reticle 1 and the size of the photosensitive substrate 8 are increased in order to expose a large liquid crystal panel, they interfere with each other in position, and any one of the sizes is restricted.
Also, it is difficult to mechanically configure the apparatus in which the reticle 1 and the photosensitive substrate 8 are inclined.

In the embodiment of the present invention shown in FIG. 3, the reticle 1 is illuminated with illumination exposure light 23, the light from the reticle 1 is reflected by the first reflecting surface 17a of the reflecting prism 17, and the refracting optical system 18 , Is reflected by the concave mirror 19, is reflected again by the second reflecting surface 17 b of the reflecting prism 17 via the refracting optical system 18, and the pattern of the reticle 1 forms an image on the intermediate image forming surface 16. This image is further reflected by the reflection prism 20, the refraction optical system 21, and the concave mirror 22 of the second optical system b.
As a result, an image is formed again on the imaging surface of the photosensitive substrate 8 on which the photosensitive agent has been applied. Therefore, the pattern of the reticle 1 is projected on the photosensitive substrate 8 as an erect image.

In this embodiment, the intermediate image plane 16 is inclined with respect to the reticle 1 and the photosensitive substrate 8, but the same structure is used as the first optical system a and the second optical system b. The reticle 1 and the photosensitive substrate 8 can be made parallel by opposing each other and relaying the image plane so as to correct the inclination angle of the intermediate image plane 16. As a result, a wide exposure area can be ensured, and the resolving power of the refractive optical systems 18 and 21 can be increased, so that exposure accuracy can be improved.

The illumination optical system and the projection optical system are composed of a base member 2.
4 (not shown in FIG. 1), and the reticle 1
By moving the carriage 7 holding the photosensitive substrate 8 at a constant speed on the base member 24 in the X direction, the entire area of the pattern on the reticle 1 is transferred onto the photosensitive substrate 8.

A position measuring device for the reticle 1 and the photosensitive substrate 8 (for example, the focus sensor 13 shown in FIG. 1)
B, 14B, etc.) to detect the relative displacement between the reticle 1 and the photosensitive substrate 8 due to slight inclination of the carriage 7 and correct the position of the carriage 7, thereby maintaining the exposure position with high accuracy. it can.

In this embodiment, the first optical system a and the second optical system a
The optical system b has concave mirrors 19 and 22 as reflection optical members. Further, the second optical system b is arranged so as to be rotationally symmetric with respect to the first optical system a with respect to the intermediate imaging plane 16. Therefore, concave mirrors 19 and 22 having a large diameter can be used, and it becomes easy to increase the resolving power of refractive optical systems 18 and 21.

As is apparent from FIG. 3, the tilt amount of the first optical system a and the tilt amount of the second optical system b with respect to the reticle 1 and the photosensitive substrate 8 which are parallel to each other are substantially the same. As a result, the reticle 1 and the photosensitive substrate 8 can be accurately arranged in parallel with each other, even though the intermediate imaging surface 16 is inclined with respect to the reticle 1 and the photosensitive substrate 8.

The exposure apparatus shown in FIG. 1 has a plurality of first arrangements arranged in a Y direction orthogonal to an X direction which is a scanning direction.
A projection array (projection optical systems 6A, 6C, 6E) and a second projection array (projection optical system 6) which is spaced apart from the first projection array by a predetermined distance in the X direction and arranged in the Y direction.
B, 6D). As a result, as is clear from the description with reference to FIG. 2, exposure can be performed in a single scan with respect to an exposure region that is long in the Y direction, which greatly contributes to expansion of the exposure region and improvement in throughput.

In the embodiment described above, the first optical system a and the second optical system b shown in FIG. 3 are applied to each of the plurality of projection optical systems 6A to 6E shown in FIG. Various exposure operations can be performed by using only one set of the first optical system a and the second optical system b shown in FIG. Hereinafter, two examples will be described with reference to FIGS.

FIG. 5 shows an embodiment in which the reticle exposure area is larger than the exposure field width of the projection lens, and is a view seen from a direction parallel to the illumination exposure light. The projection optical system shown in FIG. 3, that is, the first optical system a and the second optical system b is indicated by reference numeral 25 in FIG.

The projection area of the pattern 26 on the reticle 1 has a shape (here, a hexagonal shape) of an exposure field indicated by reference numeral 27 by a field stop arranged in parallel with the intermediate image plane 16 (see FIG. 3). Is restricted by Carriage 7 is X
It can move at a constant speed in the direction, and can move in steps in the Y direction.

At the time of the exposure operation, first, a relative displacement between the reticle 1 and the photosensitive substrate 8 is detected by an alignment microscope (not shown), and the relative displacement is detected.
Is corrected by the movement of the supporting member (reticle stage) 5. Next, the carriage 7 is moved at a constant speed in the X direction at the position of the carriage 7 in the Y direction with respect to the pattern 26 as shown in the figure, and the lower half of the pattern 26 in FIG. Thereafter, the carriage 7 holding the reticle 1 and the photosensitive substrate 8 is moved stepwise in the Y direction. The amount of movement in the Y direction at this time is set so that the exposure field 27 moves to the position indicated by reference numeral 27 '. That is, the exposure portions by the triangular portion of the exposure visual field before and after the exposure are made to exactly overlap.

The field stop arranged on the intermediate image plane 16 is formed with high precision by performing, for example, chrome vapor deposition on optical glass, and the position of the carriage 7 is accurately controlled by using a laser interferometer or the like. Will be

After the step movement of the carriage 7 in the Y direction, scanning exposure of the remaining half of the pattern 26 is performed. As described above, by performing the exposure operation while partially overlapping the exposure field, even if a slight displacement occurs between the reticle 1 and the photosensitive substrate 20 during the exposure, the change of the connection portion of the image can be smoothly performed. Exposure is performed as follows.

As described above, according to the present embodiment, even when the exposure area is larger than the exposure field width of the projection lens, the entire surface can be effectively exposed, which greatly contributes to the expansion of the exposure area. . Note that, among the projection optical systems 6A to 6E shown in FIG. 1, a plurality of projection optical systems (6
A, 6C, 6E or 6B, 6D), the photosensitive substrate 8 may be exposed by overlapping a part of the pattern of the reticle 1 by a step-and-scan operation.
In this case, the projection optical system (6A, 6C, 6E or 6
The exposure field of view B, 6D) may be hexagonal as shown in FIG.

FIG. 6 shows an embodiment in which the reticle is smaller than the pattern to be projected and exposed. If the required reticle pattern accuracy is high, the reticle may not be able to be enlarged due to manufacturing reasons. In such a case, it is effective to combine a plurality of reticle patterns to obtain a large pattern.

FIG. 6A is a view as seen from a direction parallel to the illumination exposure light, and FIG. 6B is a view as seen from the side. The reticle 1 is illuminated by the illumination exposure light 23 and is projected on the photosensitive substrate 8 by the projection optical system 25. Here, the photosensitive substrate 8 is mounted on the carriage 7 via the substrate stage 28, and the substrate stage 28 is mounted on the carriage 7.
Step movement can be performed in the Y direction. Further, the carriage 7 can move at a constant speed in the X direction.

First, the connection side of the reticle pattern 26 with the reticle pattern after the reticle exchange is illuminated by the triangular portion of the exposure field 27, and the end side opposite to the connection side is exposed field 2
Reticle 1 before replacement so that it is illuminated by the square of 7
Is placed. The substrate stage 28 is positioned so that the lower half of the photosensitive substrate 8 in the Y direction in the figure corresponds to the pattern 26. The carriage 7 moves at a constant speed in the X direction so that the relative position between the reticle 1 and the photosensitive substrate 8 does not change, and the lower half of the photosensitive substrate 8 in the figure is exposed.

FIG. 6C shows the positional relationship after the substrate stage 28 is step-moved in the Y direction for the next exposure operation. The reticle 1 is replaced with a new reticle 1 ', and is positioned such that the connection side of the pattern 26' is illuminated by the triangular portion of the exposure field 27 and the end is illuminated by the square portion, as described above. The substrate stage 28 has an unexposed portion of the photosensitive substrate 8 located in the upper half in the figure, and has a triangular portion of the exposure field (indicated by reference numeral 27 'in FIG. 6C) in the above-described stage. Step movement is performed so that the pattern portion exposed by the above and the portion of the pattern 26 'illuminated in the exposure field of view at the next exposure (indicated by reference numeral 27 in FIG. 6C) are accurately overlapped. , The photosensitive substrate is positioned as indicated by reference numeral 8 '. Then, the carriage 7 is moved at a constant speed in the X direction to expose an unexposed portion of the photosensitive substrate 8, thereby exposing a composite screen of the two patterns 26 and 26 ′ on the photosensitive substrate 8.

As described above, according to the present embodiment, it is possible to obtain an apparatus capable of efficiently exposing a large screen with high definition.

The embodiments described above have been described in order to facilitate understanding of the present invention, but not to limit the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

For example, the embodiment in which the reticle and the photosensitive substrate are scanned integrally has been described. However, a configuration in which the reticle and the photosensitive substrate are mounted on independent stages and the relative position of each stage is controlled during scanning exposure is also possible. It is possible. Also,
Although the case where the scanning exposure is performed twice in the embodiment in which the exposure pattern is larger than the exposure field width has been described, the apparatus may be modified so that the scanning exposure can be performed three or more times.

Further, in addition to an exposure apparatus used for manufacturing a liquid crystal display, a plasma display, a semiconductor integrated circuit, a thin film magnetic head, and an image pickup device (such as a CCD), a glass substrate for manufacturing a reticle or a mask is provided. Alternatively, the present invention can be applied to an exposure apparatus that transfers a circuit pattern onto a silicon wafer or the like.

As a light source of an exposure apparatus to which the present invention is applied
Is not particularly limited, and a KrF excimer laser (wavelength 24
8 nm), ArF excimer laser (wavelength 193 nm),
F₂ Laser (wavelength 157nm), Kr₂Laser (wavelength
146 nm), KrAr laser (wavelength 134 nm), A
r₂Laser (wavelength 126nm) can be used.
You.

For example, a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or a fiber laser is amplified by a fiber amplifier doped with erbium (or both erbium and yttrium), and further amplified. It is also possible to use a harmonic whose wavelength has been converted to ultraviolet light using a nonlinear optical crystal. Note that an ytterbium-doped fiber laser is used as the single-wavelength oscillation laser.

Incidentally, the liquid crystal display device and the like have the function of the circuit.
A step of performing performance design, a step of manufacturing a reticle based on this design step, a step of manufacturing a glass plate (substrate), and transferring the reticle pattern onto the substrate using the exposure apparatus described in the above embodiment. It is manufactured through a step, an assembly step, an inspection step, and the like.

The exposure apparatus (FIG. 1) according to the above-described embodiment has a high exposure accuracy and can be applied to a wide exposure area, the illumination optical systems 4A to 4D, the reticle stage, the substrate stage, the alignment system, Projection optical system 6
Each element shown in FIG. 1, such as A to 6E, is electrically, mechanically,
Alternatively, it is manufactured by optically connecting and assembling and then performing overall adjustment (electrical adjustment, operation confirmation, etc.). It is desirable to manufacture such an exposure apparatus in a clean room where the temperature, cleanliness, etc. are controlled.

[0055]

As described above, according to the present invention,
There is an effect that it is possible to provide an exposure method and an exposure apparatus which have high exposure accuracy and can be applied to a wide exposure area.
Since the effects obtained by the specific embodiment of the present invention are as described above, the description will be omitted.

[Brief description of the drawings]

FIG. 1 is a perspective view schematically showing a scanning exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a state of a projection area projected on a photosensitive substrate in the exposure apparatus shown in FIG.

FIG. 3 is a diagram showing a configuration of a projection optical system applicable to the exposure apparatus according to the embodiment of the present invention.

FIG. 4 is a diagram for explaining a conventional technique in comparison with the embodiment shown in FIG. 3;

FIG. 5 is a diagram showing an embodiment in which a reticle exposure area is larger than an exposure field width of a projection lens.

FIG. 6 is a diagram illustrating an embodiment in which a reticle is smaller than a pattern to be projected and exposed.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Reticle (mask) 4A-4E ... Illumination optical system 6A-6E ... Projection optical system 7 ... Carriage 8 ... Photosensitive substrate 17, 20 ... Reflection prism 18, 21 ... Refraction optical system 19, 22 ... Concave mirror a ... First optics System b: Second optical system

Claims (7)

[Claims] 1. An exposure apparatus for exposing an image of a pattern formed on a mask to a substrate by a projection optical system, wherein the projection optical system forms an intermediate image between a pattern surface of the mask and an imaging surface of the substrate. A first optical system that forms an image of the pattern on an image plane; and a second optical system that forms the pattern image of the intermediate image forming surface on an image forming surface of the substrate. An exposure apparatus, wherein the first optical system and the second optical system are arranged obliquely with respect to the mask and the substrate. 2. The first optical system and the second optical system,
The exposure apparatus according to claim 1, further comprising a reflection optical member. 3. The exposure apparatus according to claim 1, wherein the tilt amount of the first optical system and the tilt amount of the second optical system are substantially the same. 4. The exposure apparatus according to claim 1, wherein a field stop is disposed on the intermediate image plane at an angle. 5. The apparatus according to claim 1, wherein the exposure apparatus is a scanning exposure apparatus that exposes the pattern on the substrate while the mask and the substrate are synchronously moved in a first direction. 2. The exposure apparatus according to 1. 6. An exposure apparatus comprising: a first projection row in which a plurality of the projection optical systems are disposed along a second direction orthogonal to the first direction; and a first projection row extending from the first projection row in the first direction. 6. An exposure apparatus according to claim 5, further comprising: a second projection row, which is separated from the projection optical system by a predetermined distance along the second direction, and is provided with a plurality of the projection optical systems along the second direction. 7. An exposure method for exposing a pattern formed on a mask to a substrate, wherein an image of the pattern is formed on an intermediate image plane between the pattern surface of the mask and the image plane of the substrate. One optical system,
A second optical system that forms the pattern image of the intermediate image forming surface on the image forming surface of the substrate, and the second optical system is arranged to be inclined with respect to the mask and the substrate substantially parallel to each other. Exposure method.