JP2007101592A - Scanning exposure apparatus and method for manufacturing microdevice - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a scanning exposure apparatus using a variable forming mask, the apparatus that can perform exposure with optimum resolution according to a pattern. <P>SOLUTION: The scanning exposure apparatus is equipped with a variable forming mask to form a desired pattern, a substrate stage PST to mount a photosensitive substrate P, and an exposure optical system L1 to L13 to expose the photosensitive substrate P to a light beam from the variable forming mask so as to transfer an image to the substrate, and functions to transfer a pattern by exposure to the photosensitive substrate P by relatively scanning the substrate stage PST and the variable forming mask, wherein the apparatus is equipped with a beam size varying means to vary the size of the light beam formed corresponding to each of a plurality of elements constituting the variable forming mask. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a scanning exposure apparatus for manufacturing a microdevice such as a flat panel display element such as a liquid crystal display element in a lithography process and a method of manufacturing a microdevice using the scanning exposure apparatus.

  When manufacturing a liquid crystal display element or the like, which is one of micro devices, a mask (reticle, photomask, etc.) pattern is coated with a photoresist (glass plate, semiconductor wafer, etc.) via a projection optical system. A projection exposure apparatus that performs projection exposure on top is used.

  Conventionally, step-and-repeat type projection exposure apparatuses (steppers) that collectively expose a mask pattern to each shot area on a plate have been widely used. In recent years, instead of using one large projection optical system, a plurality of small projection optical units are arranged in a plurality of rows at predetermined intervals along the scanning direction, and the mask stage and the substrate stage are synchronously scanned, There has been proposed a step-and-scan projection exposure apparatus that continuously exposes each mask pattern on a plate in a projection optical unit (see, for example, Patent Document 1).

Japanese Patent Laid-Open No. 7-57986

  By the way, the size of the plate has been increased with the increase in size of the liquid crystal display element. Currently, a plate (glass substrate) of 1 m square or more is also used, and at the same time, the mask is also increased in size. If the pattern rule of the device required for the exposure apparatus is constant, the large mask needs to have the same flatness as the small mask. Therefore, the deflection and undulation of the large mask can be compared with the deflection and undulation of the small mask. In order to keep the same level, it is necessary to make the thickness of the large mask significantly larger than that of the small mask. In general, a mask used in a TFT (Thin Film Transistor) is a high-cost quartz glass, so that the manufacturing cost increases if the size is increased. Furthermore, the cost for maintaining the flatness of the mask, the cost due to the expansion of the inspection time of the mask pattern, and the like are increasing.

  Therefore, a maskless exposure apparatus that exposes a pattern on a substrate using DMD (Digital Micromirror Device or Deformable Micromirror Device) or the like instead of a mask has been proposed. In this maskless exposure apparatus, it is desirable that fine pattern exposure be performed with higher resolution as in the case of a projection exposure apparatus using a conventional mask. On the other hand, with respect to the rough pattern, it is desirable to perform exposure with an emphasis on high throughput rather than high resolution similar to the fine pattern. That is, it is desirable that the resolution can be adjusted according to the pattern in order to improve the throughput.

  In addition, when a DMD and a microlens array are used in a maskless exposure apparatus, the element optical member constituting the microlens array has a rectangular cross section, so that the parallel direction to each side of the rectangular shape formed on the substrate And the pattern image in the diagonal direction of the rectangle are asymmetric. Therefore, it is necessary to alleviate the asymmetry of the pattern image formed on the substrate while minimizing the decrease in exposure power.

  SUMMARY OF THE INVENTION An object of the present invention is a scanning exposure apparatus using a variable formation mask, which can perform exposure at an optimal resolution according to a pattern, and manufacture of a micro device using the scanning exposure apparatus Is to provide a method. Also provided are a scanning exposure apparatus capable of reducing the asymmetry of an image formed on a photosensitive substrate while minimizing a reduction in exposure power, and a method of manufacturing a micro device using the scanning exposure apparatus. It is to be.

  The scanning exposure apparatus of the present invention comprises a variable shaping mask (8) for forming an arbitrary pattern, a substrate stage (PST) for placing a photosensitive substrate (P), and a light beam from the variable shaping mask (8). Exposure optical systems (L1 to L13) for exposing an image on the photosensitive substrate (P), and relatively scanning the substrate stage (PST) and the variable shaping mask (8) to form the photosensitive substrate. In the scanning exposure apparatus that exposes the pattern in (P), the size (18a) of the light beam formed corresponding to each of the plurality of element elements (8a) constituting the variable shaping mask (8) is changed. It is characterized by comprising beam size varying means (19).

  According to the scanning exposure apparatus of the present invention, the size of the light beam can be changed in accordance with the resolution of the pattern formed on the photosensitive substrate. Therefore, when fine pattern exposure is performed, exposure can be performed with high resolution by setting the beam size small. Further, when performing rough pattern exposure, it is possible to perform exposure with an emphasis on high throughput rather than high resolution by setting a large beam size.

  The scanning exposure apparatus of the present invention comprises a first variable shaping mask (8) that modulates a light beam emitted from a light source according to image data, and the first variable shaping mask (8). A first exposure unit (L1) comprising first beam size varying means (19) for changing the size (18a) of the light beam formed corresponding to each of the plurality of element elements (8a); A size of the light beam formed corresponding to each of a second variable shaping mask that modulates the irradiated light beam according to image data and a plurality of element elements that constitute the second variable shaping mask. A second exposure unit (L2 to L13) different from the first exposure unit (L1), the first variable shaping mask (8), and the first variable shaping mask (8). 2 possible The first exposure unit (L1) and the second exposure unit (P) are scanned on the photosensitive substrate (P) by relatively scanning a substrate stage (PST) on which the photosensitive substrate (P) is placed with respect to the molding mask. In the scanning exposure apparatus that performs exposure of the image generated by L2 to L13), the image is generated by the first exposure unit (L1) and the second exposure unit (L2 to L13) on the substrate stage (PST). Image position detecting means for detecting the position of the image to be processed, and the first exposure unit (L1) in the area where overlap exposure is performed by the first exposure unit (L1) and the second exposure unit (L2 to L13). ) And a beam intensity measuring system for measuring the beam intensity of the second exposure units (L2 to L13), and detecting the image position detecting means Correction of the position of the image generated by the first exposure unit (L1) and the second exposure unit (L2 to L13) based on the result, and the first exposure unit (L1) based on the measurement result of the beam intensity measurement system ) And the adjustment of the beam intensity of the second exposure units (L2 to L13).

  According to the scanning exposure apparatus of the present invention, the position of the image generated by the first exposure unit and the second exposure unit can be detected and corrected, so that it is generated by the first exposure unit and the second exposure unit. The relative position of the image can be corrected. Further, since the beam intensity in the area where the overlap exposure of the first exposure unit and the second exposure unit is performed can be measured and adjusted, the light illuminated by the first exposure unit in the area where the overlap exposure is performed A difference between the intensity of the beam and the intensity of the light beam illuminated by the second exposure unit can be corrected. Therefore, the exposure amount of the first exposure unit and the exposure amount of the second exposure unit in the area where overlap exposure is performed can be made the same, and the exposure of the joint portion of the first exposure unit and the second exposure unit is good. Can be done.

  In addition, the microdevice manufacturing method of the present invention includes an exposure step (S303) in which a predetermined pattern is exposed on the photosensitive substrate (P) using the scanning exposure apparatus of the present invention, and exposure by the exposure step (S303). And a developing step (S304) for developing the photosensitive substrate (P).

  According to the method of manufacturing a microdevice of the present invention, since exposure is performed using the scanning exposure apparatus of the present invention, a predetermined pattern can be exposed on the photosensitive substrate with high resolution and high throughput, and a good microdevice is obtained. Can be obtained.

  According to the scanning exposure apparatus of the present invention, the size of the light beam can be changed in accordance with the resolution of the pattern formed on the photosensitive substrate. Therefore, when fine pattern exposure is performed, exposure can be performed with high resolution by setting the beam size small. Further, when performing rough pattern exposure, it is possible to perform exposure with an emphasis on high throughput rather than high resolution by setting a large beam size.

  Further, according to the scanning exposure apparatus of the present invention, the position of the image generated by the first exposure unit and the second exposure unit can be detected and corrected, so that the first exposure unit and the second exposure unit can Correction of the relative position of the generated image can be performed. Further, since the beam intensity in the area where the overlap exposure of the first exposure unit and the second exposure unit is performed can be measured and adjusted, the light illuminated by the first exposure unit in the area where the overlap exposure is performed A difference between the intensity of the beam and the intensity of the light beam illuminated by the second exposure unit can be corrected. Therefore, the exposure amount of the first exposure unit and the exposure amount of the second exposure unit in the area where overlap exposure is performed can be made the same, and the exposure of the joint portion of the first exposure unit and the second exposure unit is good. Can be done.

  Further, according to the microdevice manufacturing method of the present invention, since exposure is performed using the scanning exposure apparatus of the present invention, a predetermined pattern can be exposed on the photosensitive substrate with high resolution and high throughput, which is favorable. A microdevice can be obtained.

  The scanning exposure apparatus of the present invention exposes a predetermined pattern formed by a variable molding mask onto a photosensitive substrate, and is particularly effective for a substrate having an outer diameter larger than 500 mm, such as a substrate for a flat panel display. It is.

  A scanning exposure apparatus according to a first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing a schematic configuration of a scanning exposure apparatus according to the first embodiment. In this embodiment, a liquid crystal display as a photosensitive substrate on which a photosensitive material (resist) is coated with a pattern such as a liquid crystal display element while moving the plate P relative to the plurality of exposure optical systems L1 to L13. A step-and-scan type scanning projection exposure apparatus that transfers onto a flat panel display plate P such as an element will be described as an example.

  In the following description, the orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the plate P, and the Z axis is set in a direction orthogonal to the plate P. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z axis is set to the vertical direction. In this embodiment, the direction in which the plate P is moved (scanning direction) is set to the X direction.

  This scanning exposure apparatus exposes an arbitrary pattern on a plate stage (substrate stage) PST that supports a plate P having an outer diameter larger than 500 mm, that is, a side or diagonal whose length is longer than 500 mm. A plurality of exposure optical systems L1 to L13, a column 1 that supports the exposure optical systems L1 to L13, and a control device CONT (see FIG. 15) that performs overall control of operations related to exposure processing. The plurality of exposure optical systems L <b> 1 to L <b> 13 are each housed in a housing and mounted on the column 1. The exposure optical systems L1, L3, L5, L7, L9, L11, and L13 are arranged on the rear side (−X direction side) in the scanning direction and aligned in the Y direction (non-scanning direction). The exposure optical systems L2, L4, L6, L8, L10, and L12 are arranged in the Y direction on the front side (+ X direction side) in the scanning direction.

  FIG. 2 is a diagram showing a configuration of a light source unit and a fiber included in the exposure optical system (first exposure unit) L1. As shown in FIG. 2, the exposure optical system L1 includes a plurality of LD (semiconductor laser) light sources 3. Each of the light beams emitted from the plurality of LD light sources 3 is incident on the incident end 2 a of the fiber 2 through the lens 5 provided corresponding to each LD light source 3. Each of the incident ends 2 a of the fibers 2 is configured by bundling a large number of fiber strands, and is provided corresponding to each of the LD light sources 3. That is, the light beam that has passed through each lens 5 is incident on each incident end 2a. Further, as shown in FIG. 2, a part of the incident end 2 a is arranged to be inclined at a predetermined angle with respect to the optical axis of the lens 5. That is, the light beam emitted from the LD light source 3 is arranged to enter the incident end 2a at a predetermined incident angle. The LD light source 3 may be provided corresponding to each of a number of fiber strands constituting the fiber 2 (incident end 2a).

  FIG. 3 is a diagram showing a power distribution of a light beam incident on the DMD 8 when each of the incident ends 2a is arranged in a direction parallel to the optical axis. Due to the angular characteristics of the LD light source 3 and the fiber 2, the light beam cross section of the light beam incident on the DMD 8 described later has a power distribution as shown in FIG. 3, and the power decreases from the region B1 to the region B3. That is, the magnitude of the power is B1> B2> B3. Therefore, the power distribution of the light beam is reduced by arranging a predetermined number of incident ends 2 a to be inclined with respect to the optical axis of the lens 5. Specifically, the number of incident ends 2 a corresponding to the area ratio of the region B <b> 1 is arranged in a direction parallel to the optical axis of the lens 5.

  Further, the number of incident ends 2 a corresponding to the area ratio of the circumferential region B <b> 2 is arranged to be inclined at a predetermined angle with respect to the optical axis of the lens 5. That is, the light beam is incident on the incident end 2a at a predetermined incident angle. Here, the predetermined angle is an angle at which the light beam having the strongest power distribution in the circumferential region B2 enters the incident end 2a. Similarly, the number of incident ends 2 a corresponding to the area ratio of the circumferential region B <b> 3 is arranged with a predetermined angle with respect to the optical axis of the lens 5. That is, the light beam is incident on the incident end 2a at a predetermined incident angle. Here, the predetermined angle is an angle at which the light beam having the strongest power distribution in the circumferential region B3 enters the incident end 2a. By disposing a part of the incident ends 2a to be inclined, the power distribution due to the angular characteristics of the LD light source 3 and the fiber 2 can be reduced.

  When a light beam is incident on the incident end of the fiber at a predetermined incident angle, the light beam emitted from the output end of the fiber has an annular power distribution at the same angle as the predetermined incident angle. And injected. The incident angle of the light beam incident on the incident end 2a of the fiber 2 may be adjusted only in one direction. Further, instead of inclining the incident end 2a, at least one current or voltage of the plurality of LD light sources 3 corresponding to the respective circumferential regions B1 to B3 may be adjusted.

  FIG. 4 is a view showing a schematic configuration of the exposure optical system (first exposure unit) L1. The light beam that has passed through each incident end 2a of the fiber 2 exits from the exit end 2b of the fiber 2 as shown in FIG. The light beam emitted from the exit end 2 b of the fiber 2 passes through the pattern filter 7 such as a diffraction grating via the collimating optical system 4 and the mirror 6. A pattern is partially formed on the pattern filter 7 in order to make the power distribution of the light beam incident on the DMD 8 uniform. That is, the pattern filter 7 functions as dimming means. Note that diffracted light and stray light from the pattern filter 7 are eliminated by a diaphragm 14 in the relay optical system 10 described later so as not to adversely affect the exposure.

  The light beam that has passed through the pattern filter 7 uniformly illuminates a DMD (Digital Micromirror Device or Deformable Micromirror Device) 8 constituting the exposure optical system L1. The DMD 8 may be provided separately from the exposure optical system L1. FIG. 5 is a diagram showing the configuration of the DMD 8. As shown in FIG. 5, the DMD 8 has a large number of micromirrors (element elements) 8 a as devices divided into minute regions. Each of the micromirrors 8a is configured such that its angle can be changed independently. The DMD 8 changes the angle of each micromirror 8a to change the light beam in accordance with predetermined image data (first shaping mask). (Variable molding mask). That is, in synchronization with the scanning of the plate P, the angles of some of the micromirrors 8a are changed so that the reflected light is guided to the relay optical system 10 described later, and the reflected light travels in a different direction from the relay optical system 10. In this way, by changing the angle of the other micromirror 8a, an arbitrary pattern projected onto the corresponding exposure region is sequentially generated.

  The light beam reflected by the DMD 8 (a part of the micromirrors 8 a) enters the relay optical system 10. FIG. 6 is a diagram illustrating a configuration of the relay optical system 10. The relay optical system 10 includes a relay lens group 12a, a diaphragm 14, a relay lens group 12b, and a relay lens group 12c. The light beam is expanded through the relay lens group 12a, the stop 14, the relay lens group 12b, and the relay lens group 12c, and enters the microlens array 16.

  FIG. 7 is a diagram showing a partial configuration of the microlens array 16 and a fixed point image field stop 18 described later. As shown in FIG. 7, the microlens array 16 has a number of element lenses 16a corresponding to each of the micromirrors 8a constituting the DMD 8, and is arranged at a position optically conjugate with the plate P or in the vicinity thereof. Has been. Further, the microlens array 16 is configured to be movable in the direction parallel to the XY plane and the Z direction and to be tiltable with respect to the XY plane.

  The light beam that has passed through each element lens 16a of the microlens array 16 is incident on a fixed point image field stop (beam size variable plate) 18 disposed at or near the focal plane of the microlens array 16. FIG. 8 is a diagram showing the configuration of the fixed point image field stop 18. As shown in FIG. 8, the fixed point image field stop 18 has a large number of openings (light beam passage portions) 18a provided corresponding to the element lenses 16a constituting the microlens array 16, respectively. . Although the fixed point image field stop 18 shown in FIG. 8 has nine openings 18a, the actual fixed point image field stop 18 has a large number of openings 18a corresponding to a large number of element lenses 16a. ing. By passing through each opening 18a of the fixed point image field stop 18, it is possible to prevent adverse effects on exposure due to ghosts generated in the exposure optical system L1 and image flow generated when the DMD 8 is turned on / off. Note that the fixed point image field stop 18 may have a large number of light transmission portions provided corresponding to the element lenses 16a of the microlens array 16 instead of the large number of openings 18a.

  The light beam that has passed through each opening 18 a of the fixed point image field stop 18 enters a movable point image field stop (beam size variable means, beam size variable plate) 19. The movable point image field stop 19 is disposed in the vicinity of the focal point of the microlens array 16 in the vicinity of the fixed point image field stop 18, and is configured to be movable in the XY plane. FIG. 9 is a diagram showing the configuration of the movable point image field stop 19. As shown in FIG. 9, the movable point image field stop 19 has a large number of openings (light beam passage portions) 19 a provided corresponding to the openings 18 a constituting the fixed point image field stop 18. ing. Each opening 19a has a large number of openings (light beam passage portions) 19b provided corresponding to the respective openings 18a on the −Y direction side. Moreover, it has many opening parts (optical boom passage part) 19c provided corresponding to each of the opening part 18a in the + X direction side of each opening part 19a. Each opening 19a has a large number of openings (light beam passage portions) 19d provided corresponding to the respective openings 18a on the + Y direction side. Further, a large number of openings (light beam passing portions) 19e provided corresponding to the respective openings 18a are provided on the −X direction side of the respective openings 19a.

  The size S1 of the opening 19a is substantially the same as the size of the opening 18a. Further, when the size of the opening 19b is S2, the size of the opening 19c is S3, the size of the opening 19d is S4, and the size of the opening 19e is S5, S1> S2> S3> S4> S5. It is. Although the movable point image field stop 19 shown in FIG. 9 has nine openings 19a to 19e, the actual movable point image field stop 19 has a large number of openings 19a to 19a corresponding to a large number of openings 18a. 19e.

  By moving the movable point image field stop 19 relative to the fixed point image field stop 18, the size of the opening through which the light beam passes can be changed. Specifically, a point image field stop drive unit 56 (see FIG. 15) described later makes the movable point image field stop 19 relative to the fixed point image field stop 18 based on a control signal from the control unit CONT. That is, it is moved in the XY plane. In FIG. 10, the movable point image field stop 19 is moved in the + X direction with respect to the fixed point image field stop 18, and the movable point image field stop 19 passes through each opening 18 a of the fixed point image field stop 18. Is a diagram showing a state in which is disposed at a position passing through each opening 19e of the movable point image field stop 19. FIG. Similarly, by moving the movable point image field stop 19 in the −X direction with respect to the fixed point image field stop 18, the light beam that has passed through each opening 18a passes through the movable point image field stop 19 to each opening 19c. It can arrange | position in the position which passes. FIG. 11 shows a state in which the movable point image field stop 19 is moved in the + Y direction, and the movable point image field stop 19 is disposed at a position where the light beam that has passed through each opening 18a passes through each opening 19b. FIG. Similarly, by moving the movable point image field stop 19 in the −Y direction, the movable point image field stop 19 can be arranged at a position where the light beam that has passed through each opening 18a passes through each opening 19d. it can. When the movable point image field stop 19 is not moved, the light beam that has passed through each opening 18a passes through each opening 19a.

  As shown in FIGS. 10 and 11, the light beam that has passed through each opening 18 a of the fixed point image field stop 18 passes through any one of the openings 19 a to 19 e of the movable point image field stop 19, thereby generating light. The beam size is changed, and the exposure resolution of the exposure optical system L1 can be adjusted. That is, the size of the light beam can be changed according to the exposure resolution of the exposure optical system L1. For example, when a fine pattern having a line width of about 3 μm is formed by DMD 8, it is necessary to perform exposure with high resolution. Therefore, the movable point image field stop 19 is moved to a position where the light beam passes through the smallest opening 19e. In this case, although the light beam passes through the smallest opening 19e and the illuminance of the light beam decreases and the throughput decreases, exposure can be performed with high resolution.

  For example, when a rough pattern having a line width of about 10 μm is formed by DMD8, it is not necessary to perform exposure at a high resolution, and therefore, exposure at a high throughput is emphasized. Therefore, the movable point image field stop 19 is moved to a position where the light beam passes through the largest opening 19a. In this case, the illuminance of the light beam can be kept high by passing through the opening 19a having the largest light beam, and exposure can be performed with high throughput. As described above, the resolution of the exposure optical system L1 is adjusted by selecting one of the openings 19a to 19e based on the pattern formed by the DMD 8.

  The movable point image field stop 19 may have a large number of light transmission portions instead of the large number of openings 19a to 19e. Further, the other exposure optical systems (second exposure units) L2 to L13 also include a DMD (second variable shaping mask), a relay optical system, a microlens array, a fixed point image field stop, and a movable point image field stop (first). 2), and these DMD, relay optical system, microlens array, fixed point image field stop and movable point image field stop are DMD8, relay optical system 10, microlens array 16, fixed point. The image field stop 18 and the movable point image field stop (first beam size varying means) 19 have the same configuration.

  As shown in FIG. 4, the light beam that has passed through any one of the openings 19a to 19e of the movable point image field stop 19 enters the projection optical system PL1. FIG. 12 is a diagram showing a configuration of the projection optical system PL1 constituting the exposure optical system L1 and the projection optical system PL2 constituting the exposure optical system L2. As shown in FIG. 12, the light beam incident on the projection optical system PL1 enters the focus adjustment mechanism 20 constituting the projection optical system PL1. The focus adjustment mechanism 20 includes a first optical member 20a and a second optical member 20b. The first optical member 20a and the second optical member 20b are glass plates that are formed in a wedge shape and can pass through the optical boom, and constitute a pair of wedge-shaped optical members. The first optical member 20a and the second optical member 20b are configured to be relatively movable. By moving the first optical member 20a so as to slide in the X direction with respect to the second optical member 20b, the image plane position of the projection optical system PL1 moves in the Z direction.

  The light beam that has passed through the focus adjustment mechanism 20 enters the shift adjustment mechanism 22. The shift adjustment mechanism 22 includes a parallel flat glass plate 22a configured to be rotatable about the Y axis and a parallel flat glass plate 22b configured to be rotatable about the X axis. As the plane parallel glass plate 22a rotates around the Y axis, the pattern image on the plate P shifts in the X axis direction. As the plane parallel glass plate 22b rotates around the X axis, the pattern image on the plate P shifts in the Y axis direction.

  The light beam that has passed through the shift adjustment mechanism 22 enters a right-angle prism 24 as a rotation adjustment mechanism. The right-angle prism 24 is configured to be rotatable around the Z axis. As the right-angle prism 24 rotates around the Z axis, the pattern image on the plate P rotates around the Z axis. The light beam reflected by the right-angle prism 24 is reflected by the mirror 28 via the lens group 26. The light beam reflected by the mirror 28 enters the magnification adjusting mechanism 30 through the lens group 26 and the right-angle prism 24 again.

  The magnification adjustment mechanism 30 includes three lenses 30a, 30b, and 30c. The three lenses 30a to 30c are composed of, for example, a concave lens 30a, a convex lens 30b, and a concave lens 30c, and the magnification of the pattern image formed on the plate P can be adjusted by moving the convex lens 30b in the Z direction. . The light beam that has passed through the magnification adjusting mechanism 30 forms a predetermined pattern image in a predetermined exposure area on a flat panel display plate P having an outer diameter larger than 500 mm.

  A variable aperture stop (not shown) is disposed at the pupil position of the projection optical system PL1. The variable aperture stop is configured to be able to change the size of the circular opening. Specifically, the aperture stop driving unit 59 described later changes the size of the aperture of the variable aperture stop based on a control signal from the control device CONT. FIG. 13 is a diagram for explaining the size of the opening of the variable aperture stop. As shown in FIG. 13, the opening is configured to be able to be changed in size from a circle C1 inscribed to a circle C2 circumscribed to the rectangular element lens 16a constituting the microlens array 16. In other words, the opening defines a pupil shape on which the light beam exposed on the plate P is collected, and is smaller than a circle in contact with the outer shape of the element lens 16a and larger in circle than the inscribed circle. Has a shape. While the light beam passes through the aperture of the aperture stop having a size that fits in the region from the circle C1 inscribed to the element lens 16a to the circle C2 that circumscribes the element lens 16a, the decrease in exposure power is minimized. Asymmetry of the pattern image formed on the plate P can be relaxed.

  It should be noted that the asymmetry of the pattern image, that is, the image of the rectangular element lens 16a in the X direction or the Y direction and the image in the direction inclined by 45 degrees with respect to the X direction (the rectangular diagonal direction of the element lens 16a). The asymmetry is caused because the DMD 8 is arranged at the pupil position of the microlens array 16 and the element lens 16a of the microlens array 16 has a rectangular shape.

  In the case where the reduction of the asymmetry of the pattern image is more important than the suppression of the reduction of the exposure power, the opening is made to have a circular shape inscribed in the element lens 16a. In the case where the suppression of the reduction of the exposure power is more important than the relaxation of the asymmetry of the pattern image, the opening has a circular size that circumscribes the element lens 16a. Moreover, you may make it an opening part have a polygonal shape more than a pentagon instead of circular shape. Further, instead of the circular shape, the opening has a shape of a straight line and an arc in a region from a circular shape inscribed to the element lens 16a constituting the microlens array 16 to a circular shape circumscribed. Also good. When it has a polygonal shape, it is most preferably a regular octagonal shape. Note that the projection optical systems constituting the other exposure optical systems L2 to L13 (hereinafter referred to as projection optical systems PL2 to PL13) have the same configuration as the projection optical system PL1.

  FIG. 14 is a plan view showing projection regions 48a to 48m by the projection optical systems PL1 to PL13 on the plate P, respectively. Each of the projection areas 48a to 48m is set to a predetermined shape (hexagon, rhombus, parallelogram, etc.) corresponding to the field of view of the projection optical systems PL1 to PL13. In this embodiment, a trapezoidal shape is used. Have. The projection areas 48a, 48c, 48e, 48g, 48i, 48k, and 48m and the projection areas 48b, 48d, 48f, 48h, 48j, and 48l are arranged to face each other in the X direction. Further, each of the projection regions 48a to 48m is arranged in parallel so that the end portions (boundary portions) of the adjacent projection regions overlap each other in the Y direction. That is, the images formed adjacent to each other on the plate P by the exposure optical systems L1 to L13 are formed by overlapping a part of the images.

  As shown in FIG. 1, the plate stage PST on which the plate P is placed is provided on a base 34 supported by a vibration isolation table 32a, 32b and a vibration isolation table (not shown) (hereinafter referred to as a vibration isolation table 32c). It has been. Three or more anti-vibration bases 32a to 32c are usually installed so as not to transmit external vibration to the exposure apparatus. The plate stage PST is configured to be movable in the scanning direction (X direction) by the linear motor 36, and has a so-called air stage configuration that floats with respect to the guide 37 with an air gap. The plate stage PST has a fine movement stage (not shown) configured to be movable in a small amount in the non-scanning direction (Y direction).

  The scanning exposure apparatus also includes a laser interference system that measures the position of the plate stage PST, as shown in FIG. X moving mirrors 40a and 40b extending in the Y axis direction are provided at the −X side edge of the plate stage PST, and a Y moving mirror 42 extending in the X axis direction is provided at the −Y side edge of the plate stage PST. It has been. An X laser interferometer 38 is provided on the base 34 at a position facing the X movable mirrors 42a and 42b.

  An X reference mirror (not shown) and a Y reference mirror (not shown) are attached to the exposure optical systems L1 to L13, respectively. The X laser interferometer 38 irradiates the X moving mirrors 40a and 40b with the measurement beam and irradiates each X reference mirror with the reference beam. Reflected light from each of the X moving mirrors 40a and 40b and the X reference mirror based on the irradiated measurement beam and reference beam is received by the light receiving unit of the X laser interferometer 38. The X laser interferometer 38 detects the interference light and outputs the detection result to the control device CONT. Based on the detection result by the X laser interferometer 38, the control device CONT changes the amount of change in the optical path length of the length measurement beam with reference to the optical path length of the reference beam, and thus the X movable mirror 40a with reference to the X reference mirror. The position (coordinates) of 40b is measured. The control device CONT obtains the position of the plate stage PST in the X-axis direction based on the measurement result.

  The Y laser interferometer irradiates the Y moving mirror 42 with the length measuring beam and irradiates each Y reference mirror with the reference beam. Reflected light from the Y moving mirror 42 and the Y reference mirror based on the irradiated measurement beam and reference beam is received by the light receiving unit of the Y laser interferometer. The Y laser interferometer detects the interference light and outputs the detection result to the control device CONT. The control device CONT measures the amount of change in the optical path length of the length measuring beam based on the optical path length of the reference beam, and thus the position (coordinates) of the Y movable mirror 42 based on the Y reference mirror. The control device CONT obtains the position of the plate stage PST in the Y-axis direction based on the measurement.

  Further, on the rear side (−X direction side) in the scanning direction of the exposure optical systems L1 to L13, a plurality of alignment systems AL1 to AL6 for detecting alignment marks provided on the plate P and the position of the plate P in the Z direction. Are arranged side by side in the Y direction (non-scanning direction). Further, a reference member 44 having a plurality of AIS marks arranged in the Y direction is provided at the end portion in the −X direction of the plate stage PST. An aerial image measurement sensor (AIS) is provided below the reference member 44, and the aerial image measurement sensor is embedded in the plate stage PST.

  The aerial image measurement sensor (image position detection means) is used to obtain the relationship between the position of each DMD and the position at which the image of the transfer pattern formed by each DMD is projected onto the plate P. That is, the plate stage PST is moved so that the fiducial mark formed by the DMD and the AIS mark coincide with each other, and the fiducial mark image and the AIS mark are detected by the aerial image measurement sensor. And the position at which the image of the transfer pattern formed by the DMD is projected onto the plate P is obtained. In this case, the reference mark formed by the DMD is stored in a pattern storage unit 74 (see FIG. 15) described later, and the positions of the plate stage PST are the X laser interferometer 38 and the Y laser interferometer. Is detected.

  Further, in the vicinity of the plate stage PST, at least one for measuring the intensity of the light beam via each of the exposure optical systems L1 to L13, in particular, the intensity of the light beam in a region where overlap exposure is performed by adjacent exposure optical systems. Two intensity sensors (beam intensity measurement system, not shown) are provided. The intensity sensor is configured to be movable on the XY plane, moves to a position where the light beam emitted from each exposure optical system L1 to L13 can be measured, and the light beam emitted from each exposure optical system L1 to L13. Measure the intensity. The measurement result by the intensity sensor is output to the control device CONT.

  FIG. 15 is a block diagram showing the system configuration of the scanning exposure apparatus according to this embodiment. As shown in FIG. 15, the scanning exposure apparatus includes a control unit CONT that comprehensively controls operations related to exposure processing. A field stop drive unit 56 that drives the movable point image field stop 19 is connected to the control device CONT. The field stop drive unit 56 moves the movable point image field stop 19 in the XY plane based on a control signal from the control device CONT. Similarly, a field stop drive unit (not shown) for driving the movable field stop constituting the exposure optical systems L2 to L13 is connected to the control unit CONT, and the field stop drive unit receives a control signal from the control unit CONT. Based on the above, the movable point image field stop is moved in the XY plane.

  Further, a DMD driving unit 60 for individually driving each micromirror 8a of the DMD 8 is connected to the control device CONT. The DMD driving unit 60 changes the angle of each micromirror 8a of the DMD 8 based on a control signal from the control device CONT. Similarly, a DMD driving unit (not shown) for individually driving the respective DMD micromirrors constituting the exposure optical systems L2 to L13 is connected to the control unit CONT. The DMD driving unit is connected to the control unit CONT from the control unit CONT. The angle of each micromirror of the DMD is changed based on the control signal.

  Further, a lens array driving unit 62 that drives the microlens array 16 is connected to the control device CONT. The lens array driving unit 62 moves the micro lens array 16 in the XY plane or the Z direction based on a control signal from the control device CONT, or tilts the micro lens array 16 with respect to the XY plane. Similarly, a lens array driving unit (not shown) for driving the microlens array constituting the exposure optical systems L2 to L13 is connected to the control unit CONT, and the lens array driving unit receives a control signal from the control unit CONT. Based on the above, the microlens array is moved in the XY plane or in the Z direction, or inclined with respect to the XY plane.

  Further, the control device CONT is connected to an aperture stop driving unit 59 that changes the aperture of a variable aperture stop (not shown) that constitutes the projection optical system PL1. The aperture stop driving unit 59 changes the size of the aperture of the aperture stop based on a control signal from the control device CONT. Similarly, a variable aperture stop driving unit (not shown) constituting the exposure optical systems L2 to L13 is connected to the control device CONT, and the aperture stop driving unit is controlled based on a control signal from the control device CONT. Change the size of the opening.

  The control device CONT includes a focus adjustment mechanism drive unit 64 that drives the focus adjustment mechanism 20, a shift adjustment mechanism drive unit 66 that drives the shift adjustment mechanism 22, a right-angle prism drive unit 68 that drives the right-angle prism 24, and a magnification adjustment. A magnification adjusting mechanism driving unit 70 for driving the mechanism 30 is connected. The focus adjustment mechanism drive unit 64, the shift adjustment mechanism drive unit 66, the right-angle prism drive unit 68, and the magnification adjustment mechanism drive unit 70 are based on the control signal from the control device CONT, the focus adjustment mechanism 20, the shift adjustment mechanism 22, and the right-angle prism. 24, the magnification adjusting mechanism 30 is driven. Similarly, a focus adjustment mechanism drive unit (not shown) that drives the focus adjustment mechanism that constitutes each of the projection optical systems PL2 to PL13, a shift adjustment mechanism drive unit (not shown) that drives the shift adjustment mechanism, and a right-angle prism. A right-angle prism driving unit (not shown) for driving and a magnification adjusting mechanism driving unit (not shown) for driving the magnification adjusting mechanism are connected. The focus adjustment mechanism drive unit, shift adjustment mechanism drive unit, right angle prism drive unit, and magnification adjustment mechanism drive unit drive the focus adjustment mechanism, shift adjustment mechanism, right angle prism, and magnification adjustment mechanism based on the control signal from the control device CONT. Let

  The control device CONT is connected to a plate stage driving unit 72 that moves the plate stage PST along the X direction, which is the scanning direction, and moves it slightly in the Y direction. In addition, alignment systems AL1 to AL6, autofocus systems AF1 to AF6, an aerial image measurement sensor, an intensity sensor, an X laser interferometer 38, and a Y laser interferometer are connected to the control device CONT. The control device CONT is connected to a pattern storage unit 74 that stores a transfer pattern formed in the DMD 8 and a reference mark used for alignment and aerial image measurement. Further, an exposure data storage unit 76 that stores exposure data is connected to the control device CONT.

  In the scanning exposure apparatus according to this embodiment, the micromirror 8a of the DMD 8, each element lens 16a of the microlens array 16, each opening 18a of the fixed point image field stop 18, and each opening of the movable point image field stop 19 is provided. The portions 19a to 19e are two-dimensionally arranged in a direction parallel to the X direction and the Y direction in the XY plane. Each of the light beams that have passed through any one of the openings 18a of the fixed point image field stop 18 and the openings 19a to 19e of the movable point image field stop 19 reaches a position parallel to the X direction and the Y direction. When scanning exposure is performed, a linear pattern parallel to the X direction can be formed, but a linear pattern parallel to the Y direction cannot be formed. Therefore, for example, the fixed point image field stop 18 and the movable point image field stop 19 are installed by rotating by a predetermined angle α around the Z axis so that a linear pattern parallel to the Y direction can also be exposed. As shown in FIG. 4, the light beam that has passed through any one of the openings 18 a of the fixed point image field stop 18 and the openings 19 a to 19 e of the movable point image field stop 19 reaches the plate P. To. Note that the microlens array 16 is also rotated by a predetermined angle α around the Z axis in accordance with the rotation of the fixed point image field stop 18 and the movable point image field stop 19.

  That is, the control device CONT outputs a control signal to the lens array driving unit 62, and rotates the microlens array 16 about the Z axis via the lens array driving unit 62. Similarly to the microlens array 16, the control device CONT drives the fixed point image field stop 18 and the movable point image field stop 19 to rotate about the Z axis through a drive unit (not shown). Further, the control device CONT outputs a control signal to the DMD driving unit 60, and each element lens 16 of the microlens array 16, each opening 18 a of the fixed point image field stop 18, and the opening of the movable point image field stop 19. The angles of the micromirrors 8a of the DMD 8 are adjusted via the DMD driving unit 60 so as to correspond to the units 19a to 19e. By rotating the microlens array 16, the fixed point image field stop 18, and the movable point image field stop 19, any one of the openings 18a of the fixed point image field stop 18 and the openings 19a to 19e of the movable point image field stop 19 is rotated. The light beam that has passed through one of them reaches the plate P after being rotated by a predetermined angle α around the Z axis. When scanning exposure is performed in this state, a linear pattern parallel to the X direction and the Y direction can be formed.

  Note that any one of the openings 18 a of the fixed point image field stop 18 and the openings 19 a to 19 e of the movable point image field stop 19 is driven by rotating the right angle prism 24 around the Z axis via the right angle prism drive unit 68. The light beam that has passed through one of them may be rotated by a predetermined angle around the Z axis to reach the plate P. In this embodiment, the opening 18a of the fixed point image field stop 18 and the opening of the movable point image field stop 19 are two-dimensionally arranged in the direction parallel to the X direction and the Y direction in the XY plane. 19a to 19e, but fixed point image field stop openings and movable point image field stop openings two-dimensionally arranged in a direction inclined by 45 degrees with respect to the X direction and the Y direction in the XY plane. May be provided. Even in this case, the light beam that has passed through each aperture of the fixed point image field stop and the aperture of the movable point image field stop is rotated by a predetermined angle α around the Z axis as shown in FIG. To reach P.

  Further, the resolution and exposure amount can be controlled by rotating the microlens array 16, the fixed point image field stop 18 and the movable point image field stop 19 by a small angle around the Z axis according to the exposure resolution. Specifically, when a fine pattern is exposed, that is, when the size of the light beam is small, a fine positional resolution is required. Therefore, control is performed so as not to cause a deviation in the predetermined angle α to ensure high resolution. In addition, when the exposure of a rough pattern, that is, the size of the light beam is large, a certain deviation of the predetermined angle α does not affect the position resolution of the pattern. Therefore, the exposure amount is controlled to ensure high throughput. For example, when the angle 2α is rotated, the number of overlapping beams increases without adversely affecting the position resolution, so that the exposure amount increases and the throughput can be improved.

  The control device CONT rotates and drives the microlens array, fixed point image field stop, and movable point image field stop included in each of the other exposure optical systems L2 to L13 with respect to the Z axis. The angle is adjusted, or the right angle prism is driven to rotate with respect to the Z axis. By doing so, the light beams that have passed through the openings of the fixed point image field stop and the movable point image field stop are respectively opened through the openings 18 a of the fixed point image field stop 18 and the openings 19 a to 19 a of the movable point image field stop 19. Similarly to the light beam that has passed through any one of 19e, the light beam is rotated by a predetermined angle α around the Z axis so as to reach the plate P.

  Next, a method for adjusting the illuminance of the light beam passing through the exposure optical systems L1 to L13 based on the pattern formed by DMD will be described. Based on the pattern shape stored in the pattern storage unit 74 and the exposure data (recipe data) stored in the exposure data storage unit 76, the control device CONT determines, for example, the illuminance of the light beam corresponding to the line width of the pattern. select. When the line width is very thin, high resolution is required, so the beam size of the light beam is reduced. Specifically, the control device CONT moves the movable point image field stop 19 with respect to the fixed point image field stop 18 via the point image field stop drive unit 56, and the smallest opening of the movable point image field stop 19. 19 e overlaps with the opening 18 a of the fixed point image field stop 18. In this way, the size of the opening of the movable point image field stop 19 is set based on the line width of the pattern.

  The controller CONT adjusts the illuminance (intensity) of the light beam and the position of the image formed by the exposure optical systems L1 to L13 after the movable point image field stop 19 is moved. As for the intensity of the light beam, the intensity sensor measures the intensity of the light beam that has reached the plate P via the exposure optical systems L1 to L13 while moving the intensity sensor. The control device CONT adjusts, for example, the intensity of the light beam emitted from the light source based on the measurement result by the intensity sensor. Further, the position of the image formed by the exposure optical systems L1 to L13 is measured based on the measurement result of the aerial image measurement sensor. The control device CONT changes the exposure data formed by the DMD that constitutes each exposure optical system based on the measured image position, thereby the position (projection position) of the image formed by the exposure optical systems L1 to L13. Correct. In addition, projections formed by the exposure optical systems L1 to L13 using at least one of a focus adjustment mechanism, a shift adjustment mechanism, a right-angle prism as a rotation adjustment mechanism, and a magnification adjustment mechanism constituting the projection optical systems PL1 to PL13. Correct the position.

  In this embodiment, the intensity (exposure amount) of the light beam transmitted through each of the exposure optical systems L1 to L13, in particular, the intensity of the light beam reaching the joint of adjacent exposure optical systems is measured, and the measurement result Based on this, the intensity of the light beam reaching the joint can be adjusted. That is, for example, the intensity sensor measures the intensity of the light beam that reaches the joint between the projection area 48a formed by the exposure optical system L1 and the projection area 48b formed by the exposure optical system L2. Specifically, the control device CONT moves the intensity sensor to a position where it can measure the intensity of the light beam that passes through the exposure optical system L1 and reaches the joint between the projection area 48a and the projection area 48b. The intensity sensor outputs the measurement result to the control device CONT.

  In addition, the control device CONT moves the intensity sensor to a position where the intensity of the light beam that passes through the exposure optical system L2 and reaches the joint between the projection area 48a and the projection area 48b can be measured. The intensity sensor outputs the measurement result to the control device CONT. The control device CONT compares the intensity of the light beam transmitted through the exposure optical system L1 measured by the intensity sensor with the intensity of the light beam transmitted through the exposure optical system L2. When the difference between the intensity of the light beam transmitted through the exposure optical system L1 and the intensity of the light beam transmitted through the exposure optical system L2 is large, the line width accuracy with respect to the exposure amount at the joint between the projection area 48a and the projection area 48b is reduced. To do. Therefore, the control device CONT adjusts the voltage of a light source (not shown) to make the intensity of the light beam transmitted through the exposure optical system L1 and the intensity of the light beam transmitted through the exposure optical system L2 substantially the same. .

  Note that the control device CONT causes the intensity sensor to measure the intensity of the light beam that reaches the other joint, and adjusts the intensity of the light beam based on the measurement result. In this embodiment, one intensity sensor configured to be movable in the XY plane is provided, but a plurality of intensity sensors may be provided. The intensity sensor according to this embodiment measures the intensity of a single beam of the light beam. However, the intensity of the light beam divided into a predetermined unit (for example, in one or a plurality of projection regions). (The intensity of the light beam that reaches 1), and the intensity of the light beam that reaches the area obtained by dividing one projection area) may be measured.

  In this embodiment, the size of the light beam and the illuminance of the light beam can be detected based on the measurement result of the intensity sensor (detection means). After changing the size of the light beam by the movable point image field stop 19, the control unit CONT performs scanning based on the measurement result of the intensity sensor and the exposure amount data included in the exposure information stored in the exposure data storage unit 76. The stage speed (scanning speed) of the plate stage PST at the time of exposure is determined.

  According to the scanning projection exposure apparatus according to the first embodiment, the transfer pattern formed by the DMD can be changed in synchronization with the scanning of the substrate stage, so that a desired pattern can be easily generated. it can. Further, it is not necessary to provide a mask stage that is necessary when using a mask on which a transfer pattern is formed, and the cost and size of the exposure apparatus can be reduced. Further, according to this scanning projection exposure apparatus, since the exposure optical system can correct the position of the image of the transfer pattern, the image of the transfer pattern formed from the DMD can be accurately projected and exposed.

  Further, according to the scanning exposure apparatus according to the first embodiment, the size of the light beam can be changed in accordance with the resolution of the pattern formed on the plate P. Therefore, when fine pattern exposure is performed, exposure can be performed with high resolution by setting the beam size small. Further, when performing rough pattern exposure, it is possible to perform exposure with an emphasis on high throughput rather than high resolution by setting a large beam size.

  Further, according to the scanning exposure apparatus of the first embodiment, the position of the image generated by the adjacent exposure optical system can be detected and corrected, so that it is generated by the adjacent exposure optical system. Correction of the relative position of the image can be performed. Further, since the beam intensity in the area where the overlap exposure of the adjacent exposure optical system is performed can be measured and adjusted, the intensity of the light beam illuminated by the adjacent exposure optical system in the area where the overlap exposure is performed It is possible to correct the difference. Therefore, the exposure amounts of the adjacent exposure optical systems in the region where the overlap exposure is performed can be made the same, and the joints of the adjacent exposure optical systems can be exposed satisfactorily.

  Further, even when the resolution of the pattern of a plurality of layers formed on the photosensitive substrate P is changed by changing the size of the opening of the movable point image field stop 19, the resolution can be adjusted for each layer. It becomes possible. Furthermore, even when the resolutions of the projection optical systems PL1 to PL13 are different from each other, the adjustment can be easily performed. In the projection optical system PL1, even when the resolution is different between the peripheral part and the central part, the resolution characteristic of the projection optical system PL1 is measured in advance, and the resolution characteristic is corrected based on the measurement result of the resolution characteristic. The resolution on the photosensitive substrate P can be made uniform by adjusting the size of the opening. That is, when the beam is larger at the peripheral portion than the central portion of the projection optical system PL1, the size of the opening corresponding to the peripheral portion is reduced in advance or the size of the opening corresponding to the central portion is large. Increase the size. By setting the size of the opening to the initial size, it is possible to correct the nonuniformity of the resolution of the projection optical system PL1.

  In the first embodiment, the fixed point image field stop 18 and the movable point image field stop 19 are provided. However, the first movable point image field stop (beam size variable plate) 118 as shown in FIG. Further, a second movable point image field stop (beam size variable plate) 119 as shown in FIG. 19 may be provided. The first movable point image field stop 118 is disposed at or near the focal plane of the microlens array 16. Further, as shown in FIG. 18, the first movable point image field stop 118 has a large number of openings (light beam passage portions) 118a provided corresponding to the element lenses 16a constituting the microlens array 16, respectively. Have. The first movable point image field stop 118 shown in FIG. 18 has nine openings 118a, but the actual first movable point image field stop 118 has a large number of openings corresponding to a large number of element lenses 16a. 118a. Further, the first movable point image field stop 118 may have a large number of light transmitting portions provided corresponding to the element lenses 16a of the microlens array 16 instead of the large number of openings 118a. .

  The second movable point image field stop 119 is arranged in the vicinity of the first movable point image field stop 118 at or near the focal plane of the microlens array 16, and is configured to be movable in the XY plane. As shown in FIG. 19, the second movable point image field stop 119 has openings (light beam passage portions) 119a provided corresponding to the openings 118a constituting the first movable point image field stop 118, respectively. Have. The size of the opening 119a is substantially the same as the size of the opening 118a. Although the second movable point image field stop 119 shown in FIG. 19 has nine openings 119a, the actual second movable point image field stop 119 has a large number of openings corresponding to a large number of openings 118a. 119a. Further, the second movable point image field stop 119 may have a large number of light transmitting portions instead of the opening 119a.

  By moving the first movable point image field stop 118 and the second movable point image field stop 119 relative to each other, the size of the opening through which the light beam passes can be changed. FIG. 20 is a diagram illustrating a state in which the first movable point image field stop 118 and the second movable point image field stop 119 are moved by a predetermined amount relative to each other in the direction of the arrow in the drawing. FIG. 21 is a diagram showing a state in which the first movable point image field stop 118 and the second movable point image field stop 119 are moved more than the predetermined amount shown in FIG. As shown in FIGS. 20 and 21, the amount by which the first movable point image field stop 118 and the movable point image field stop 119 are moved in the direction of the arrow in the figure increases, and the first movable point image field stop 118 and the second movable point image field stop 118 are increased. The size of the opening formed by the movable point image field stop 119 is increased.

  As shown in FIGS. 20 and 21, the size of the light beam is changed by passing through the opening formed by the first movable point image field stop 118 and the second movable point image field stop 119, and the exposure optical system L1. The exposure resolution can be adjusted. That is, the size of the light beam can be changed according to the exposure resolution of the exposure optical system L1. Similarly, the size of the light beam is changed by passing through openings formed by the first movable point image field stop and the second movable point image field stop included in the exposure optical systems L2 to L13, and the exposure optical systems L2 to L2 are changed. The exposure resolution of L13 can be adjusted. That is, the size of the light beam can be changed according to the exposure resolution of the exposure optical systems L2 to L13.

  Next, a scanning exposure apparatus according to a second embodiment of the present invention will be described with reference to the drawings. The scanning exposure apparatus according to the second embodiment has a configuration other than the point image field stops 18 and 19 and the projection optical systems PL1 to PL13 that constitute the scanning exposure apparatus according to the first embodiment. I have. That is, in the scanning exposure apparatus according to the first embodiment, the pattern image is formed on the plate P by the light beam via the point image field stops 18 and 19 and the projection optical systems PL1 to PL13. In the scanning exposure apparatus according to the second embodiment, a pattern image is formed on the plate by the light beam that has passed through the microlens array. Therefore, in the description of the second embodiment, a detailed description of the same configuration as that of the scanning exposure apparatus according to the first embodiment is omitted. In the description of the scanning exposure apparatus according to the second embodiment, the same configuration as that of the scanning exposure apparatus according to the first embodiment is the same as that used in the first embodiment. A description will be given with reference numerals.

  FIG. 22 is a diagram showing a configuration of the exposure optical system L1 provided in the scanning exposure apparatus according to the second embodiment. The configuration of the exposure optical systems L2 to L13 is the same as that of the exposure optical system L1. As shown in FIG. 22, the light beam emitted from the LD light source 3 (not shown in FIG. 22) enters the fiber 2 and exits from the exit end 2 b of the fiber 2. A diaphragm (not shown) is disposed in the vicinity of the injection end 2b. The diaphragm is configured to be able to change the size of the opening. Specifically, a diaphragm driving unit (not shown) changes the size of the aperture of the diaphragm based on a control signal from the control device CONT. By changing the size of the aperture opening, the size of the light beam emitted from the exit end 2b of the fiber 2 is changed, and the exposure resolution of the exposure optical system L1 can be adjusted. That is, the size of the light beam can be changed according to the exposure resolution of the exposure optical system L1. For example, when a fine pattern having a line width of about 3 μm is formed by DMD 8, it is necessary to perform exposure with high resolution. Therefore, the size of the exit end 2b is reduced in order to reduce the size of the light beam. In this case, the illuminance of the light beam decreases and the throughput decreases, but the exposure can be performed with high resolution.

  For example, when a rough pattern having a line width of about 10 μm is formed by DMD8, it is not necessary to perform exposure at a high resolution, and therefore, exposure at a high throughput is emphasized. Therefore, the size of the exit end 2b is increased in order to increase the size of the light beam. In this case, since the illuminance of the light beam does not decrease, exposure can be performed with high throughput. Thus, the exposure resolution of the exposure optical system L1 is adjusted by selecting the size of the exit end 2b of the fiber 2 based on the pattern formed by the DMD 8.

  Instead of making the size of the exit end 2b of the fiber 2 variable, the size of the cross section of the light beam emitted from the LD light source 3 may be made variable by controlling the power source of the LD light source 3. In other words, in order to form a desired light beam size, only the LD light source 3 necessary to form a desired light beam cross section is turned on. Further, instead of making the size of the exit end 2b of the fiber 2 variable, the size of the opening of the diaphragm 14 provided in the relay optical system 10 may be made variable. That is, when the size of the light beam is reduced, the size of the aperture of the diaphragm 14 is reduced, and when the size of the light beam is increased, the size of the aperture of the aperture 14 is increased.

  Further, in this embodiment, as shown in FIG. 22, the stop 15 is disposed in the front focal plane of the microlens array 16 or in the vicinity thereof, or immediately before the microlens array 16. The diaphragm 15 has a large number of openings corresponding to each of the micromirrors 8a constituting the DMD 8 (and eventually the element lenses 16a constituting the microlens array 16 described later). For example, as shown in FIG. 13, each aperture of the diaphragm 15 can be changed in size from a circle C1 inscribed to a rectangular element lens 16a constituting the microlens array 16 to a circle C2 circumscribed. Has been. That is, the opening defines the pupil shape of the light beam on which the light beam to be exposed on the plate P is collected, and is smaller than the circle in contact with the outer shape of the element lens 16a and smaller than the inscribed circle. Is also a large circular shape. While the light beam passes through the aperture of the aperture stop having a size that fits in the region from the circle C1 inscribed to the element lens 16a to the circle C2 that circumscribes the element lens 16a, the decrease in exposure power is minimized. Asymmetry of the pattern image formed on the plate P can be relaxed. The opening has a polygonal shape or a shape by a straight line and an arc in a region from a circle C1 inscribed to the element lens 16a constituting the microlens array 16 to a circle C2 circumscribed, instead of the circular shape. You may do it. When it has a polygonal shape, it is most preferably a regular octagonal shape.

  According to the scanning type exposure apparatus according to the second embodiment, since the point image field stop and the projection optical system are not provided, the apparatus main body can be reduced in size and cost. Further, the size of the light beam can be changed according to the resolution of the pattern formed on the photosensitive substrate. Therefore, when fine pattern exposure is performed, exposure can be performed with high resolution by setting the beam size small. Further, when performing rough pattern exposure, it is possible to perform exposure with an emphasis on high throughput rather than high resolution by setting a large beam size.

  Further, since the position of the image generated by the adjacent exposure optical system can be detected and corrected, the relative position of the image generated by the adjacent exposure optical system can be corrected. Further, since the beam intensity in the area where the overlap exposure of the adjacent exposure optical system is performed can be measured and adjusted, the intensity of the light beam illuminated by the adjacent exposure optical system in the area where the overlap exposure is performed It is possible to correct the difference. Therefore, the exposure amounts of the adjacent exposure optical systems in the region where the overlap exposure is performed can be made the same, and the joints of the adjacent exposure optical systems can be exposed satisfactorily.

  The scanning exposure apparatus according to each of the above-described embodiments includes the projection optical system shown in FIG. 12, but includes a projection optical system having the configuration shown in FIG. 23 or FIG. Also good. The projection optical system shown in FIG. 23 includes a prism 24a, a lens group 26a, and a mirror 28a. The projection optical system shown in FIG. 24 includes a beam splitter 24b, a quarter wavelength plate 25, a lens group 26b, and a mirror 28b.

  In each of the above-described embodiments, a light beam having a substantially square light beam cross-sectional shape emitted from the exit end of the fiber is incident on the DMD. For example, as shown in FIGS. By inserting the prisms 5a and 5b into the optical path between the collimating optical system 4 and the mirror 6 (or DMD8), the cross-sectional shape of the light beam may be shaped into a rectangular shape similar to that of the DMD8 and incident on the DMD8. . In this case, the light beam can be used without waste as compared with the case where a square-shaped light beam is incident on the rectangular DMD 8 shown in FIG.

  In each of the above-described embodiments, the microlens array and the point image field stop (fixed point image field stop and movable point image field stop) are used in combination, but the point image is not used without using the microlens array. Only a field stop may be used. However, in consideration of the amount of light, it is preferable to use the microlens array as a set. In addition, in order to make the beam size variable, it is possible to provide a zoom function by providing a multi-stage microlens array, and to adjust the beam size by zooming the microlens array. At this time, the point image field stop may be used in combination, but the point image field stop may be omitted.

  The fixed point image field stop and the movable point image field stop constituting the scanning exposure apparatus according to the first embodiment are combined with the aperture stop in the fiber and relay optical system according to the second embodiment. Thus, the illuminance of the illumination light may be adjusted. Also, the apertures in the fiber and relay optical system according to the second embodiment according to the size of the light beam changed by the movable point image field stop constituting the scanning exposure apparatus according to the first embodiment. You may make it adjust the magnitude | size of a light source with an aperture stop. Finer adjustment is possible by adjusting the illuminance in combination.

  In the scanning exposure apparatus according to each of the above-described embodiments, a micropatterning device is exposed by exposing a photosensitive substrate (plate) to a transfer pattern formed by a variable shaping mask using a projection optical system (exposure process). (Semiconductor elements, imaging elements, liquid crystal display elements, thin film magnetic heads, etc.) can be manufactured. The following is an example of a technique for obtaining a semiconductor device as a microdevice by forming a predetermined circuit pattern on a plate as a photosensitive substrate using the scanning exposure apparatus according to each of the above-described embodiments. This will be described with reference to the flowchart of FIG.

  First, in step S301 in FIG. 26, a metal film is deposited on one lot of plates. In the next step S302, a photoresist is applied on the metal film on the one lot of plates. Thereafter, in step S303, using the scanning exposure apparatus according to each of the above-described embodiments, the image of the pattern formed by the variable shaping mask is converted into each shot area on the one lot of plates via the projection optical system. Are sequentially exposed and transferred. After that, in step S304, the photoresist on the one lot of plates is developed, and in step S305, the resist pattern is used as an etching mask on the one lot of plates to form a variable molding mask. A circuit pattern corresponding to the formed pattern is formed in each shot region on each plate.

  Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the semiconductor device manufacturing method described above, since the exposure is performed using the scanning exposure apparatus that includes the variable molding mask and can adjust the resolution in accordance with the pattern formed on the plate, a good semiconductor can be obtained. You can get a device. In steps S301 to S305, a metal is vapor-deposited on the plate, a resist is applied on the metal film, and exposure, development and etching processes are performed. Prior to these processes, the process is performed on the plate. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

  In the scanning exposure apparatus according to each of the above embodiments, a liquid crystal display element as a micro device is obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). You can also. Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. First, in FIG. 27, in the pattern formation step S401, a pattern formed by a variable molding mask using the scanning exposure apparatus according to each of the above-described embodiments is applied to a photosensitive substrate (a glass substrate or the like coated with a resist). A so-called photolithographic process for performing transfer exposure is performed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S402.

  Next, in the color filter forming step S402, a large number of groups of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter formation step S402, a cell assembly step S403 is executed. In the cell assembly step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S401, the color filter obtained in the color filter formation step S402, and the like. In the cell assembly step S403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step S401 and the color filter obtained in the color filter formation step S402, and a liquid crystal panel (liquid crystal cell ).

  Thereafter, in a module assembly step S404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, exposure is performed using a scanning exposure apparatus that includes a variable molding mask and can adjust the resolution according to the pattern formed on the plate. A liquid crystal display element can be obtained.

It is a figure which shows the structure of the scanning exposure apparatus concerning 1st Embodiment. It is a figure which shows the structure of the light source part and fiber concerning 1st Embodiment. It is a figure which shows the example of the power distribution of a light beam. It is a figure which shows the structure of the exposure optical system concerning 1st Embodiment. It is a figure which shows the structure of DMD concerning 1st Embodiment. It is a figure which shows the structure from DMD to a fixed point image field stop. It is a figure which shows the structure of a part of micro lens array and a fixed point image field stop. It is a figure which shows the structure of the fixed point image field stop concerning 1st Embodiment. It is a figure which shows the structure of the movable point image field stop concerning 1st Embodiment. It is a figure which shows the state which moved the movable point image field stop to + X direction. It is a figure which shows the state which moved the movable point image field stop to + Y direction. It is a figure which shows the structure of the projection optical system concerning 1st Embodiment. It is a figure for demonstrating the magnitude | size of the opening part of a variable aperture stop. It is a figure which shows the projection area | region by the projection optical system on a plate. 1 is a block diagram showing a system configuration of a scanning exposure apparatus according to a first embodiment. It is a figure for demonstrating the position where the light beam which passed each opening part of the point image field stop concerning 1st Embodiment reaches | attains on a plate. It is a figure for demonstrating the position where the light beam which passed each opening part of the point image field stop concerning 1st Embodiment reaches | attains on a plate. It is a figure which shows the structure of another fixed point image field stop. It is a figure which shows the structure of another movable point image field stop. It is a figure which shows the state which moved the other movable point image field stop in the arrow direction. It is a figure which shows the state which moved the other movable point image field stop in the arrow direction. It is a figure which shows the structure of the exposure optical system concerning 2nd Embodiment. It is a figure which shows the structure of another projection optical system. It is a figure which shows the structure of another projection optical system. It is a figure which shows the structure of another exposure optical system. It is a flowchart which shows the manufacturing method of the semiconductor device as a microdevice concerning embodiment of this invention. It is a flowchart which shows the manufacturing method of the liquid crystal display element as a microdevice concerning embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 2 ... Fiber, 4 ... Collimating optical system, 8 ... DMD, 10 ... Relay optical system, 16 ... Micro lens array, 18 ... Fixed point image field stop, 19 ... Movable point image field stop, 20 ... Focus adjustment mechanism, 22 ... Shift adjustment mechanism, 24 ... right angle prism (rotation adjustment mechanism), 30 ... magnification adjustment mechanism, 118 ... first movable point image field stop, 119 ... second movable point image field stop, L1-L13 ... exposure optical system, PL1- PL13 ... projection optical system, P ... plate, PST ... plate stage, CONT ... control device.

Claims (14)

A variable shaping mask that forms an arbitrary pattern; a substrate stage on which a photosensitive substrate is placed; and an exposure optical system that exposes an image on the photosensitive substrate by a light beam from the variable shaping mask, the substrate stage; In a scanning type exposure apparatus that exposes a pattern on the photosensitive substrate by relatively scanning the variable molding mask,
A scanning type exposure apparatus, comprising: a beam size changing means for changing a size of the light beam formed corresponding to each of a plurality of element elements constituting the variable shaping mask.   2. The scanning exposure apparatus according to claim 1, wherein the beam size changing unit changes the size of the light beam according to an exposure resolution.   3. The scanning exposure apparatus according to claim 1, wherein the beam size varying means includes an adjusting means for adjusting a size of a light source that supplies the light beam to the variable shaping mask.   3. The scanning exposure apparatus according to claim 1, wherein the beam size varying means includes an aperture stop that changes the size of the light beam.   The aperture stop includes at least two beam size variable plates each having a light beam passage portion through which the light beam passes, and relatively moves the at least two beam size variable plates so that the light beam passage portion 5. The scanning exposure apparatus according to claim 4, wherein the size of the light beam is changed by changing the size.   At least one of the beam size variable plates includes a plurality of the light beam passage portions, and at least one of the plurality of light beam passage portions has a size different from that of the other light beam passage portions. The scanning exposure apparatus according to claim 5.   7. An adjusting means for adjusting a size of a light source for supplying the light beam to the variable shaping mask according to a size of the light beam changed by the aperture stop. The scanning exposure apparatus according to any one of the above.   A microlens array for forming a beam size corresponding to each of a plurality of element elements constituting the variable shaping mask, wherein the aperture stop is disposed at or near a focal plane of the microlens array. The scanning exposure apparatus according to any one of claims 4 to 7.   9. The variable shaping mask according to claim 1, wherein an angle formed by the relatively scanning direction and one side of the variable shaping mask is rotated by a small angle according to the exposure resolution. The scanning exposure apparatus according to any one of the above. Detecting means for detecting the size of the light beam and the illuminance of the light beam;
After changing the size of the light beam by the beam size variable means, the stage speed of the substrate stage at the time of scanning exposure is determined based on the result of detection by the detection means and exposure amount data included in exposure information. The scanning exposure apparatus according to any one of claims 1 to 9, wherein:   The pupil shape on which the beam exposed on the photosensitive substrate is condensed is smaller than the outer shape of the element element constituting the variable shaping mask or the circle contacting the outer shape of the element lens constituting the microlens array, and the inner shape. 11. The scanning exposure apparatus according to claim 8, further comprising a pupil stop for forming a circle, a polygon, or a straight line and an arc larger than a contact circle. A first variable shaping mask that modulates a light beam emitted from a light source in accordance with image data, and a plurality of element elements that constitute the first variable shaping mask. A first exposure unit comprising first beam size varying means for changing the size;
A second variable shaping mask that modulates the light beam emitted from the light source according to image data, and a plurality of element elements that constitute the second variable shaping mask. A second beam size variable means for changing the size, and a second exposure unit different from the first exposure unit,
The first exposure unit and the second exposure unit on the photosensitive substrate by scanning the substrate stage on which the photosensitive substrate is placed with respect to the first variable molding mask and the second variable molding mask. In a scanning exposure apparatus that performs exposure of an image generated by
On the substrate stage, image position detection means for detecting the position of an image generated by the first exposure unit and the second exposure unit, and overlap exposure by the first exposure unit and the second exposure unit are performed. Comprising at least one beam intensity measurement system for measuring beam intensity of the first exposure unit and the second exposure unit in a region to be performed;
Correction of the position of the image generated by the first exposure unit and the second exposure unit based on the detection result of the image position detection means, and the first exposure unit and the first based on the measurement result of the beam intensity measurement system A scanning type exposure apparatus that performs at least one of the adjustment of the beam intensity of two exposure units.   The scanning exposure apparatus according to any one of claims 1 to 12, wherein the photosensitive substrate has an outer diameter larger than 500 mm. An exposure step of exposing a predetermined pattern on a photosensitive substrate using the scanning exposure apparatus according to any one of claims 1 to 13,
A development step of developing the photosensitive substrate exposed by the exposure step;
A method for manufacturing a microdevice, comprising:

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