JP2006235533A - Exposure device and method for manufacturing micro device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure device that can eliminate influences of warpage in a substrate. <P>SOLUTION: The exposure device to project a pattern of a mask M through a projection optical system PL onto a substrate Pa, Pb includes: a detection means AF which detects the position on the substrate in the optical axis direction of the projection optical system; a selection means which selects a region on the substrate in approximately the same position in the optical axis direction of the projection optical system based on the detection results by the detection means; an illumination region forming means 2 which forms an illumination region corresponding to the region on the substrate selected by the selection means; and an exposure means which exposes the region on the substrate corresponding to the illumination region formed by the illumination region forming means. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an exposure apparatus for manufacturing a microdevice such as a flat panel display element such as a liquid crystal display element in a lithography process and a method of manufacturing a microdevice using the exposure apparatus.

  A projection exposure apparatus that transfers a mask (reticle) pattern onto a substrate via a projection optical system when a semiconductor element, a liquid crystal display element, or the like is manufactured by a photolithography process is used. Here, when a mask pattern is transferred onto a film-like or belt-like substrate, the substrate is likely to bend, and the amount of defocus (the amount of positional deviation in the optical axis direction of the projection optical system) due to the deflection of the substrate is large. Increase. Therefore, in order to reduce the defocus amount due to the deflection of the substrate, an exposure apparatus that divides and exposes the exposure area of the substrate has been proposed (for example, see Patent Document 1).

JP-A-61-232615

  However, for example, when using a film-like substrate that is relatively thin with respect to the surface to be exposed or a belt-like substrate that is elongated in the form of a roll and exposed at the time of exposure, the exposure apparatus described in Patent Document 1 is used. Since the exposure area of the substrate is not divided based on the deflection of the substrate, the defocus amount due to the deflection of the substrate cannot be completely eliminated.

  In addition, when exposing to a substrate used for a flat panel display element such as a liquid crystal display element, it becomes difficult to keep the flatness of the photosensitive surface high as the substrate size increases. Or the influence by flatness becomes large.

  An object of the present invention is to provide an exposure apparatus that can eliminate the influence of substrate deflection or flatness, and a method of manufacturing a micro device using the exposure apparatus.

  An exposure apparatus according to the present invention is an exposure apparatus that exposes a mask pattern onto a substrate via a projection optical system, wherein the detection means detects a position in the optical axis direction of the projection optical system on the substrate, and the detection means A selection unit that selects a region on the substrate having substantially the same position in the optical axis direction of the projection optical system on the substrate, on the substrate selected by the selection unit. An illumination area forming means for forming an illumination area corresponding to the illumination area; and an exposure means for exposing an area on the substrate corresponding to the illumination area formed by the illumination area forming means. .

  According to the exposure apparatus of the present invention, the focus position on the substrate (the position in the optical axis direction of the projection optical system) is divided into substantially the same region, and exposure is performed for each region. Thus, exposure can be performed with high accuracy.

  The exposure apparatus of the present invention is an exposure apparatus that exposes a mask pattern onto a substrate via a projection optical system, and is controlled by a deflection shape control means for controlling the deflection shape of the substrate and the deflection shape control means. Detecting means for detecting a position in the optical axis direction of the projection optical system on the substrate having the bent shape; and at least corresponding to a predetermined region on the substrate based on a detection result detected by the detecting means. Illumination area forming means for forming one illumination area, and exposure means for exposing a predetermined area on the substrate based on the at least one illumination area formed by the illumination area forming means. And

  According to the exposure apparatus of the present invention, the deflection of the substrate can be controlled, and the exposure is performed for each region formed according to the controlled deflection of the substrate. The influence can be eliminated, and exposure can be performed with high accuracy.

  Moreover, the manufacturing method of the micro device of this invention includes the exposure process which exposes the pattern of a mask on a board | substrate using the exposure apparatus of this invention, and the image development process which develops the said board | substrate exposed by the said exposure process. It is characterized by that.

  According to the microdevice manufacturing method of the present invention, since exposure is performed using an exposure apparatus that can eliminate the influence of substrate deflection, it is possible to reduce the shift of the focus position during exposure, and to achieve good micro You can get a device.

  According to the exposure apparatus of the present invention, the focus position on the substrate (the position in the optical axis direction of the projection optical system) is divided into substantially the same region, and exposure is performed for each region. In addition, the influence of the deflection of the substrate can be eliminated, and the influence of the flatness can be eliminated even on a substrate in which the flatness of the substrate cannot be reduced to a predetermined value or less, so that exposure can be performed with high accuracy.

  Further, according to the microdevice manufacturing method of the present invention, since exposure is performed using an exposure apparatus that can eliminate the influence of substrate deflection, it is possible to reduce the shift of the focus position during exposure, which is favorable Microdevices can be obtained.

  A projection exposure apparatus according to a first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus according to the first embodiment. As shown in FIG. 1, the projection exposure apparatus according to the first embodiment includes an illumination optical system IL for illuminating a mask M with a light beam emitted from a light source (not shown), and a pattern image of the mask M as a substrate stage PST. It is a step-and-repeat type exposure apparatus (stepper) including a projection optical system PL for performing projection exposure on film substrates (substrates) Pa and Pb having an outer diameter larger than 500 mm. Examples of the film substrate include a resin film having a relatively thin substrate and a long belt-like film wound on a roll.

  A light beam emitted from a light source including a mercury lamp or an extra-high pressure mercury lamp included in the illumination optical system IL passes through an optical member (collimator lens or the like) 1 included in the illumination optical system IL. The light source may be an ultraviolet radiation type LED or LD. The light beam that has passed through the optical member 1 enters a transmissive liquid crystal blind (illumination region forming means) 2 that is a kind of spatial light modulator. The transmissive liquid crystal blind 2 is disposed in the optical path between the light source and the mask M, and is disposed at a position optically conjugate with the mask M (film substrates Pa and Pb).

  The transmissive liquid crystal blind 2 has an illumination shape (illumination area) corresponding to an area on the film substrates Pa and Pb having substantially the same position (focus position) in the optical axis direction of the projection optical system PL on the film substrates Pa and Pb. Form. That is, the transmissive liquid crystal blind 2 can form a desired light intensity distribution, and the light intensity distribution can be changed relative to the mask M and the film substrates Pa and Pb. The light beam transmitted through the transmissive liquid crystal blind 2 illuminates the illumination area on the mask M corresponding to the illumination shape formed by passing through the transmissive liquid crystal blind 2.

  In the vicinity of the mask M, there is provided a substrate on which fiducial marks FM used for calibration of an alignment system, a projection optical system, and the like are formed. Various patterns such as contact holes (CH), line and space (LS), and isolated lines are formed on the substrate as fiducial marks FM.

  The pattern on the mask M uniformly illuminated by the light beam shaped into a predetermined illumination shape by the transmissive liquid crystal blind 2 is projected and exposed onto the film substrate Pa or the film substrate Pb, which is a photosensitive substrate, via the projection optical system PL. Is done. The film substrates Pa and Pb are transported by a transport device (transport means) (not shown) that can simultaneously transport a plurality of film substrates in the direction of the arrow in the drawing. The film substrates Pa and Pb are adsorbed on a substrate stage PST (substrate holder) via a vacuum chuck. The substrate stage PST is configured to be movable in a direction parallel to and orthogonal to the film substrates Pa and Pb, and its position is measured and controlled by a laser interferometer (not shown). The position information of the substrate stage PST measured by the laser interferometer is output to the control unit 4 (see FIG. 2) described later.

  The film substrates Pa and Pb are exposed at the same time (exposure means), separated from the substrate stage PST at the end of exposure, and simultaneously transported in a state of being lined up to a developing device by a transport device (not shown). An ionizer (static discharger) (not shown) is provided in the vicinity of the substrate stage PST, and static electricity generated when the film substrate is attracted and separated is removed by this ionizer.

  The projection exposure apparatus also includes an alignment system AL for aligning the film substrates Pa and Pb and an autofocus system (detecting means) AF for focusing the film substrates Pa and Pb. The alignment system AL detects positional information of the film substrates Pa and Pb by detecting alignment marks formed in a region (second exposure region) other than the exposure regions of the film substrates Pa and Pb. The autofocus system AF detects the focus positions (positions of the projection optical system PL in the optical axis direction) of the film substrates Pa and Pb. The position information of the film substrates Pa and Pb detected by the alignment system AL and the focus position detected by the autofocus system AF are output to the control unit 4 (see FIG. 2) described later.

  FIG. 2 is a diagram showing a system configuration of the projection exposure apparatus according to the first embodiment. As shown in FIG. 2, the projection exposure apparatus includes a control unit 4 that controls exposure and the like by the projection exposure apparatus. A storage unit 5 is connected to the control unit 4, and the storage unit 5 stores pattern information up to the previous layer exposed on the film substrates Pa and Pb. The control unit 4 is connected to an alignment system AL, an autofocus system AF, and a laser interferometer (not shown). Further, a liquid crystal blind drive unit 6 and a substrate stage drive unit 8 are connected to the control unit 4. The control unit 4 outputs a control signal to the liquid crystal blind drive unit 6 and the substrate stage drive unit 8 based on detection results output from the alignment system AL, autofocus system AF, and laser interferometer (not shown). The liquid crystal blind drive unit 6 drives the transmissive liquid crystal blind 2 based on the control signal from the control unit 4 and sets the distribution of the light transmission region of the transmissive liquid crystal blind 2. The substrate stage drive unit 8 drives the substrate stage PST based on the control signal from the control unit 4 and adjusts the positions of the substrate stage PST and eventually the film substrates Pa and Pb.

  Next, an exposure method using the projection exposure apparatus according to the first embodiment will be described with reference to the flowchart shown in FIG.

  First, the control unit 4 acquires pattern information up to the previous layer formed on the film substrates Pa and Pb stored in the storage unit 5 (step S9, acquisition means). Next, the control part 4 extracts the area | region which has a high reflectance on film board | substrate Pa and Pb based on the pattern information to the previous layer acquired in step S9. Next, a plurality of focus positions in the extracted region having a high reflectance are detected by the autofocus system AF (step S10, detection means). For example, as shown in FIG. 4, the focus positions of the regions r1 to r9 on the exposure region R of the film substrate Pa are detected by the autofocus system AF. FIG. 5 shows the detection result by the autofocus system AF, and the unit is μm. This detection result is output to the control unit 4. Similarly, focus positions of a plurality of areas on the exposure area of the film substrate Pb are also detected, and the detection results are output to the control unit 4.

  In this embodiment, the autofocus system AF is moved and measured at a plurality of points. However, a multipoint focus sensor is provided so that a plurality of measurement points can be measured simultaneously. It may be. For example, in this method, non-photosensitive detection light is emitted from the illumination optical system of the multi-point focus sensor to the photoresist on the photosensitive substrate, and a plurality of slit images are oblique to the optical axis of the projection optical system. Projected onto a plurality of measurement points on the substrate. Reflected light from these measurement points re-images corresponding slit images on a plurality of photoelectric conversion elements via, for example, a vibrating slit plate in the light receiving optical system. The detection signal from these photoelectric conversion elements is synchronously rectified by, for example, the vibration slit plate with a drive signal, thereby generating a focus signal that changes approximately in proportion to the focus position of the corresponding measurement point within a predetermined range. In this way, a plurality of measurement points can be measured simultaneously.

  Next, the control unit 4 calculates the focus position of another area on the exposure area R based on the focus positions of the areas r1 to r9 detected in step S10 (step S11). FIG. 6 shows the calculation result calculated by the control unit 4, and the unit is μm. Similarly, based on the focus positions of a plurality of areas on the exposure area of the film substrate Pb detected in step 10, the focus positions of the areas on the exposure area of the film substrate Pb where the focus position is not detected are also calculated. To do.

  Next, the control unit 4 selects an exposure region R that is substantially the same focus position based on the focus positions of the regions r1 to r9 detected in step S10 and the focus positions of other regions calculated in step S11. (Step S12, selection means). Specifically, a group of regions that are focus positions within an allowable range that can be regarded as substantially the same or the same is created. Here, an allowable range that can be regarded as the same is stored in the storage unit 5 in advance. Similarly, the exposure area of the film substrate Pb is also divided for each area having substantially the same focus position.

  Next, the control unit 4 drives the liquid crystal blind driving unit 6 to form an illumination region on the mask M corresponding to the exposure region R and the exposure region of the film substrate Pb divided and grouped in step S13. Thus, the distribution of the light transmission area of the transmission type liquid crystal blind 2 is set (step S13, illumination area forming means). For example, when 10 areas including the area r3 (divided areas) are groups having substantially the same focus position, only 10 areas including the area r3 are irradiated with light as shown in FIG. In other words, the distribution of the light transmission region of the transmissive liquid crystal blind 2 is set so that the other region (black region in FIG. 7) is not irradiated with light. At this time, if there is a group having approximately the same focus position as the 10 areas (divided areas) including the area r3 in the exposure area of the film substrate Pb, the film substrate Pb has approximately the same focus position. The transmissive liquid crystal blind 2 is set so that light is irradiated to the region belonging to the group.

  Next, using the transmission type liquid crystal blind 2 set in step S13, ten regions (regions belonging to the same group) including the region r3 of the exposure region R of the film substrate Pa and substantially the same of the film substrate Pb. A region belonging to the group having the focus position is simultaneously exposed (step S14, exposure means).

  Next, the control unit 4 has an area belonging to another group (another divided area) within the exposure area R of the film substrate Pa or within the exposure area of the film substrate Pb, and exposure of the area belonging to that group is performed. It is determined whether or not all the exposure areas of the film substrate Pa and the film substrate Pb have been exposed (step S15). If it is determined that the exposure of all regions of the film substrate Pa and the film substrate Pb has not been completed, the process returns to step S13, and exposure light (illumination light) is applied only to regions that belong to another group and are not exposed. ) Is set so that the light transmission region of the transmission type liquid crystal blind 2 is irradiated, and the operations of step S14 and step S15 are repeated until the exposure of all regions of the film substrate Pa and the film substrate Pb is completed.

  Note that pattern information up to the previous layer is acquired in step S9, a region having high reflectance on the film substrates Pa and Pb is extracted based on the information acquired in step S10, and the focus position of the extracted region is detected. However, a plurality of colored portions having high reflectance are provided in the non-exposed areas (or second exposed areas) around the exposed areas on the film substrates Pa and Pb, and the focus in each of the colored areas is The position may be detected. In this case, the focus position of each exposure region on the entire surface of the film substrates Pa and Pb is calculated based on the detected focus position of the non-exposure region at the periphery of the exposure region on the film substrates Pa and Pb.

  In step S12, an allowable range in which the focus position can be regarded as the same is set in advance, and the exposure area is divided by creating a group based on the focus position for each area. The exposure area may be divided by setting the number of groups and creating groups within a range not exceeding the maximum number of groups based on the focus position for each area. In this case, since the maximum number of groups, that is, the maximum number of exposures is set in advance, it is possible to prevent a decrease in throughput.

  According to the projection exposure apparatus according to the first embodiment, the focus position on the film substrate (the position in the optical axis direction of the projection optical system) is divided into approximately the same area, and exposure is performed for each area. Therefore, even in a film substrate that is likely to bend, the influence of the deflection of the film substrate can be eliminated, and exposure can be performed with high accuracy.

  In the first embodiment, the pattern formed on the mask is exposed on the film substrate. However, when the rough pattern is exposed, the rough pattern exposed on the film substrate is transmissive. You may form with a liquid crystal blind. In this case, a raw glass mask is installed at a position where the mask is arranged.

  In the first embodiment, the pattern formed on the mask is exposed on the film substrate. However, when the rough pattern is exposed, the rough pattern exposed on the film substrate is transmissive. You may form with a liquid crystal blind. That is, fine patterns such as element patterns and device patterns are patterned on a mask, and relatively rough patterns such as wiring patterns from elements or devices are formed on a transmissive liquid crystal blind instead of a mask. Therefore, it is possible to appropriately create a wiring pattern without being restricted by the mask, and it is possible to increase the degree of freedom of the package as a whole device. In this case, a raw glass mask may be installed at a position where the mask is arranged, or a portion to be patterned with the transmissive liquid crystal blind may be blanks. As for the alignment of the mask pattern and the pattern of the transmissive liquid crystal blind, for example, the alignment is performed by adjusting the pattern position formed by the transmissive liquid crystal blind using an image pickup means provided on the film substrate side. Further, not only a transmissive liquid crystal blind but also a reflective liquid crystal bride or DMD (digital micromirror device) may be used.

  In the first embodiment, a mask having a simple (rough) pattern can be manufactured using the fiducial mark FM provided in the vicinity of the mask M. Specifically, a transmissive liquid crystal blind so that exposure light (illumination light) irradiates only a necessary pattern among patterns such as contact holes, lines and spaces, and isolated lines formed as fiducial marks FM. The distribution of the light transmission region 2 is set, and a substrate serving as a mask is placed on the substrate stage PST for exposure. Next, a simple pattern is formed on the substrate by moving the substrate stage PST by a necessary amount and repeating the above operation, and the substrate on which the simple pattern is formed is used as a mask. For example, when the transmissive liquid crystal blind 2 is set so as to irradiate only an isolated line having a width of 3 μm and exposure is performed, an isolated line having a width of 6 μm is formed when the exposure is performed by moving by 3 μm, and a step of 2 μm is formed. When exposure is performed while moving, an isolated line having a width of 5 μm is formed. In this case, a mask having a simple pattern can be manufactured without using a mask drawing apparatus. In addition, by producing a mask used in this projection exposure apparatus with this projection exposure apparatus, the occurrence factors of various overlay precisions substantially coincide with each other, so that overlay precision can be improved. In addition, you may comprise so that the optical member in which the fiducial mark is formed can be replaced | exchanged, In this case, various patterns can be used as a fiducial mark.

  In the first embodiment, a film substrate having a size that can be placed on the substrate stage is used. However, a belt-like film substrate longer than the width of the substrate stage may be used. The size may be reduced. In this case, the both ends of the belt-shaped film substrate are wound around the roll portion, and by rotating these roll portions, the belt-shaped film substrate wound around one roll portion is conveyed onto the substrate stage, Adsorbed on the substrate stage. Moreover, the strip-shaped film board | substrate which finished exposure is conveyed to the other roll part by rotating the roll part of both ends, and is wound up by the other roll part. By repeating this, the entire surface of the belt-shaped film substrate is exposed.

  In the first embodiment, two film substrates are simultaneously transported and simultaneously exposed, but three or more film substrates are simultaneously transported and simultaneously exposed. May be.

  Next, a projection exposure apparatus according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 8 is a diagram showing a schematic configuration of a projection exposure apparatus according to the second embodiment. As shown in FIG. 8, the projection exposure apparatus according to the second embodiment forms a pattern image of the illumination optical system IL2 for illuminating the quartz mask M2 with a light beam emitted from a light source (not shown) and the quartz mask M2. This is a step-and-repeat type exposure apparatus (stepper) including a projection optical system PL2 for projection exposure on a substrate (substrate) P2.

  In the following description, the XYZ orthogonal coordinate system shown in each drawing is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set so that the X axis and the Y axis are parallel to the film substrate P2, and the Z axis is set in a direction orthogonal to the film substrate P2. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z-axis is set vertically upward.

  A light beam emitted from a light source composed of a mercury lamp or an extra-high pressure mercury lamp included in the illumination optical system IL2 passes through an optical member (collimator lens or the like) 9 included in the illumination optical system IL2. The light source may be an ultraviolet radiation type LED or LD. The light beam that has passed through the optical member 9 enters a rectangular slit (illumination region forming means) 10 having a longitudinal direction in the Y direction that allows the light beam (illumination light) to pass therethrough. The slit 10 is disposed in the optical path between the light source and the quartz mask M2, and is disposed at a position optically conjugate with the quartz mask M2 (film substrate P2). The slit 10 is configured to be movable in the X-axis direction, and can move relative to the quartz mask M2 and the film substrate P2. That is, the exposure is sequentially performed by moving the slit 10 stepwise. The light beam transmitted through the slit 10 illuminates the illumination area on the quartz mask M2 corresponding to the illumination shape formed by passing through the slit 10. The quartz mask M2 includes a pellicle on the lower surface side.

  The pattern on the quartz mask M2 uniformly illuminated by the light beam shaped into a predetermined illumination shape by passing through the slit 10 is projected and exposed onto the film substrate P2 which is a photosensitive substrate via the projection optical system PL2. . As shown in FIG. 9, the film substrate P2 is a belt-like substrate that is longer than the interval between two arms 12a and 12b provided in a substrate stage, which will be described later, and both ends thereof are wound by roll portions 13a and 13b. The portion of the film substrate P2 that is wound around the roll portion 13a is conveyed between the arms 12a and 12b as the roll portions 13a and 13b rotate clockwise, and is attracted to the arms 12a and 12b via the vacuum chuck. The At the end of exposure, the part between the arms 12a and 12b of the film substrate P2 is conveyed to the roll part 13b by the clockwise rotation of the roll parts 13a and 13b, and is wound around the roll part 13b. Also, different alignment marks are provided for each shot so that the position of the film substrate P2, the shot number, and the like can be determined in the peripheral area (second exposure area) of the exposure area of the film substrate P2. .

  The film substrate P2 includes two arms 12a and 12b provided in the substrate stage, that is, two arms extending in a direction (Y-axis direction) orthogonal to the transport direction of the film substrate P2 and arranged at a predetermined interval in the X-axis direction. It is supported (adsorbed) by arms (flexure shape control means) 12a, 12b. The two arms 12a and 12b are configured to be movable in the X-axis direction so that the width between the arms 12a and 12b changes. As shown in FIG. 9, when each of the arms 12a and 12b is moved in the direction of the arrow in the figure (the position indicated by the broken line in the figure) and the distance between the arms 12a and 12b is shortened, the film substrate P2 is shown as a solid line in FIG. It changes from the position shown by the position shown by the broken line of FIG. In other words, the film substrate P2 that is flat is bent by being supported by being pulled by the arms 12a and 12b.

  Similarly, when each of the arms 12a and 12b is moved from the position indicated by the broken line in FIG. 9 to the position indicated by the solid line in FIG. 9 and the distance between the arms 12a and 12b is increased so as to pull the film substrate P2, the film The substrate P2 changes from the position indicated by the broken line in FIG. 9 to the position indicated by the solid line in FIG. 9, and the deflection of the film substrate P2 decreases. In this way, the deflection of the film substrate P2 can be controlled by moving at least one of the arm 12a and the arm 12b in the X-axis direction to change the distance between the arms 12a and 12b. Moreover, the magnification of the pattern exposed on the film substrate P can be adjusted by changing the distance between the arms 12a and 12b. That is, the magnification of the pattern image of the mask M2 formed on the film substrate P2 is adjusted by shifting the position of the film substrate P2 in the optical axis direction of the projection optical system PL2 in accordance with the illumination area formed by the slit 10. can do. When the film substrate P2 is not pulled by the arms 12a and 12b, the deflection is usually reduced when the interval between the arms is set narrow, and the deflection is increased when the arm is set wide.

  The projection exposure apparatus includes a laser interferometer (not shown), and the positions of the two arms 12a and 12b are measured and controlled by the laser interferometer. The projection exposure apparatus also includes an alignment system AL2 for aligning the film substrate P2 and an autofocus system (detection means) AF2 for adjusting the focus of the film substrate P2. The alignment system AL2 detects the position information of the film substrate P2 by detecting an alignment mark formed in the peripheral region (second exposure region) of the exposure region of the film substrate P2. The autofocus system AF2 detects the focus position of the film substrate P2 (the position of the projection optical system PL2 in the optical axis direction). The position information of the arms 12a and 12b detected by the laser interferometer, the position information of the film substrate P2 detected by the alignment system AL2, and the focus position detected by the autofocus system AF2 are described later with a control unit 14 (see FIG. 10). ).

  FIG. 10 is a diagram showing a system configuration of the projection exposure apparatus according to the second embodiment. As shown in FIG. 10, the projection exposure apparatus includes a control unit 14 that controls exposure and the like by the projection exposure apparatus. A storage unit 15 is connected to the control unit 14, and the storage unit 15 stores pattern information up to the previous layer exposed on the film substrate P2. The control unit 14 is connected to a slit driving unit 16 that moves the position of the slit 10 with respect to the XY plane. The control unit 14 outputs a control signal to the slit driving unit 16. The slit driving unit 16 moves the slit 10 based on a control signal from the control unit 14. For example, by sequentially moving the slit 10 in the X direction, the pattern of the mask M2 can be sequentially exposed on the exposure region on the film P2.

  The control unit 14 is connected to an alignment system AL2, an autofocus system AF2, and a laser interferometer (not shown). The control unit 14 is connected to a first arm driving unit 18 that moves the arm 12a and a second arm driving unit 20 that moves the arm 12b. The control unit 14 controls a control signal for at least one of the first arm driving unit 18 and the second arm driving unit 20 based on detection results output from the alignment system AL2, the autofocus system AF2, and a laser interferometer (not shown). Is output. The first arm drive unit 18 moves the arm 12a in the X direction based on a control signal from the control unit 14. Further, the second arm driving unit 20 moves the arm 12b in the X direction based on a control signal from the control unit 14. The position of the film substrate P2 can be adjusted by adjusting the positions of the arms 12a and 12b, and the deflection of the film substrate P2 can be controlled by adjusting the distance between the arms 12a and 12b.

  Next, an exposure method using the projection exposure apparatus according to the second embodiment will be described with reference to the flowchart shown in FIG.

  First, the control unit 14 acquires pattern information up to the previous layer formed on the film substrate P2 stored in the storage unit 15 (step S20, acquisition unit). Next, the control part 14 extracts the area | region which has a high reflectance on the film board | substrate P2 based on the pattern information to the front layer acquired in step S20. Next, a plurality of focus positions in the extracted region having a high reflectance are detected by the autofocus system AF2 (step S21). This detection result is output to the control unit 14. In addition, the film board | substrate P2 at this time is arrange | positioned in the state extended by the arms 12a and 12b.

  Next, the control unit 14 controls the deflection shape of the film substrate P2 based on the focus position of the film substrate P2 detected in step S21 (step S22, deflection shape control means). That is, the focus position of each position of the exposure area of the film substrate P2 illuminated by the illumination light that has passed through the slit 10 is calculated. When the position of the exposure area of the film substrate P2 illuminated by the illumination light that has passed through the slit 10 in the optical axis direction of the projection optical system PL2 is the same or substantially the same as the focus position at each position, the focus is caused by the deflection of the film substrate P2. It is determined that there is no displacement in the position, and the film substrate P2 is set in a state stretched by the arms 12a and 12b. On the other hand, when the position of the exposure area of the film substrate P2 illuminated by the illumination light that has passed through the slit 10 in the optical axis direction of the projection optical system PL2 is different from the focus position at each position, the focus position due to the deflection of the film substrate P2 It is determined that there is a gap between the arms 12a and 12b, so that the position of the exposure area irradiated by the slit 10 in the optical axis direction of the projection optical system PL2 is substantially the same at each position. A flexible shape is formed. Specifically, the distance between the arms 12a and 12b that support the film substrate P2 is adjusted by driving at least one of the first arm driving unit 18 and the second arm driving unit 20.

  Next, the auto focus system AF2 detects the focus position on the film substrate P2 corresponding to the shape of the slit 10, that is, the region irradiated with the exposure light (step S23, detection means). This detection result is output to the control unit 14. The control unit 14 adjusts the deflection of the film substrate P2 in step S22, and the position in the optical axis direction of the projection optical system PL2 of the exposure area of the film substrate P2 illuminated by the illumination light that has passed through the slit 10 is the respective position. It is determined whether or not they are substantially the same. If it is determined that the position of the exposure area of the film substrate P2 in the optical axis direction of the projection optical system PL2 is not substantially the same, the distance between the arms 12a and 12b is adjusted again. The deflection of the film substrate P2 is readjusted.

  Next, the control unit 14 drives the slit driving unit 16 to move the position of the slit 10 so as to illuminate a predetermined region on the film substrate P2 (an exposure region whose deflection shape is controlled in step S22). (Step S24, illumination area forming means).

  Next, a predetermined area on the film substrate P2 is exposed by illumination light (exposure light) that has passed through the slit 10 installed in step S24 (step S25, exposure means). Next, the slit 10 is moved stepwise in the X direction, and the operation of steps S23 to S25 is repeated to sequentially expose the exposure area of the film substrate P2.

  In step S21, an area having a high reflectance on the film substrate P2 is extracted based on the acquired pattern information up to the previous layer, and the focus position of the extracted area is detected. A plurality of colored portions having a high reflectance in a non-exposed region around the exposure region, detecting a focus position of the plurality of colored portions, and determining a focus position of the exposure region of the film substrate P2 based on the detection result You may make it calculate.

  According to the projection exposure apparatus according to the second embodiment, the deflection of the film substrate can be controlled by adjusting the distance between the two arms. The influence of deflection can be eliminated, and exposure can be performed with high accuracy. In addition, since the film substrate is supported by two arms, the time required for suction and removal of the film substrate is shortened because there are fewer suction surfaces of the film substrate compared to the substrate stage that supports the entire surface of the film substrate. And the throughput can be improved. In addition, generation of wrinkles due to expansion of the film substrate or the like can be prevented, and focus accuracy can be improved.

  In addition, for example, when pattern exposure for a chip-sized substrate or the like in a mobile phone display or IC mounting is performed, these are set as one unit, and slits are provided for each unit (for example, one or two). If repeated exposure is performed by stepping, the overlay accuracy can be improved without generating a joint.

  In the second embodiment, the exposure is performed by moving the slit relative to the film substrate (or mask). However, the second embodiment includes an optical fiber that emits illumination light, and the optical fiber. The exposure may be performed by moving the irradiation position of the illumination light emitted from the film relative to the film substrate (or mask). In this case, the illumination light emitted from the light source can be effectively used without waste as compared with the case of using the slit.

  In the second embodiment, the film substrate is supported by two arms, but the film substrate may be supported by three or more arms. Further, as shown in FIG. 12, a substrate holding roll 22 configured to be movable in the X direction is provided between the two arms 12 a and 12 b, and a film is formed by the two arms 12 a and 12 b and the substrate holding roll 22. The substrate P2 may be supported. In this case, it is possible to improve the planarization of the exposure region by performing exposure while moving the slit 10 and the substrate holding roll 22 synchronously.

  Further, as shown in FIG. 13, two cylindrical arms 24a and 24b and an endless belt 26 connecting the two arms 24a and 24b may be provided. At the time of exposure, the arms 24a and 24b are rotated clockwise at the same speed, whereby the endless belt 26 is rotated clockwise and the film substrate P2 placed on the endless belt 26 is moved in the X direction. That is, after the exposure of the region placed on the endless belt 26 of the film substrate P2 is finished, the endless belt 26 is rotated, and the region of the film substrate P2 that has been exposed is moved in the X direction, and the roll portion 13b. Wrapped around. Then, the area newly placed on the endless belt 26 of the film substrate P2 is exposed.

  Further, as shown in FIG. 14, instead of the arms 12a and 12b, cylindrical arms 28a and 28b configured to be rotationally movable in the X direction may be provided. At the time of exposure, the cylindrical arms 28a and 28b are moved stepwise relative to the slit 10 in the X direction while controlling the deflection of the film substrate P2 by adjusting the distance between the cylindrical arms 28a and 28b. Are sequentially exposed.

  Further, the deflection may be controlled by controlling the amount of rotation of each of the cylindrical arms 28a and 28b. For example, the deflection can be reduced by rotating the cylindrical arm 28b faster than the cylindrical arm 28a, and the deflection can be increased by rotating it slowly.

  In the second embodiment, the exposure is sequentially performed by moving the slit relative to the film substrate (quartz mask) in the X direction, but the film substrate is moved relative to the slit. You may make it perform exposure sequentially by carrying out the step movement relatively to a direction.

  In the second embodiment, the deflection of the film substrate is controlled by adjusting the distance between the two arms. However, the slit shape can be changed, and the two arms can be changed. The deflection of the film substrate may be controlled by adjusting the interval and the slit shape.

  Moreover, in this 2nd Embodiment, although the strip | belt-shaped film board | substrate is used, you may use the film board | substrate which has the length which can be mounted between two arms.

  In the second embodiment, the film substrate is positioned on a plane parallel to the horizontal plane. However, the film substrate may be positioned on a plane orthogonal to the horizontal plane. That is, the film substrate may be arranged in the vertical direction, and in this case, the deflection of the film substrate can be reduced.

  In the second embodiment, a quartz mask is used. However, a glass mask other than quartz, a resin mask, or a film mask (hereinafter referred to as a film mask) may be used. . In the case of using a film mask that easily causes thermal expansion and deflection, it is preferable to provide a pellicle on the upper side as well as the lower side of the mask. When a film mask is used, a film mask on which a pattern is drawn may be attached to a quartz mask on which no pattern is drawn. In this case, the cost can be reduced as compared with the case where a quartz mask on which a pattern is drawn is used, and it is effective when manufacturing a small variety of products.

  When a film mask is used, the film mask is supported using two (or three or more) arms as in the film substrate according to this embodiment, and the distance between the two arms supporting the film mask is set. By adjusting, the deflection of the film mask can be controlled. Further, the deflection control of the film mask and the deflection control of the film substrate can be relatively performed.

  When a film-like mask is used, a strip-like film mask longer than the width of the mask stage may be used. In this case, by winding both ends of the belt-shaped film mask around the roll portion and rotating these roll portions, the belt-shaped film mask wound around one roll portion is conveyed onto the mask stage, Adsorbed on the mask stage. Further, when retracting from the mask stage, the roll masks at both ends are rotationally driven, whereby the film mask placed on the mask stage is conveyed to the other roll unit and wound around the other roll unit.

  In the second embodiment, the deflection of the film substrate is controlled by adjusting the distance between the two arms. In order to prevent the film substrate from wavy, air is blown toward the upper surface of the film substrate. And you may make it add the deflection | deviation control of the film substrate by the wind pressure by the ventilation. Alternatively, the deflection control of the film substrate may be performed by providing a mechanism for blowing air toward the lower surface of the film substrate or a mechanism for blowing air toward both surfaces of the film substrate. In this case, it is possible to prevent accumulation of heat due to air blowing, and thus it is possible to prevent deterioration in accuracy of the optical system due to heat.

  In the second embodiment, the illumination unevenness can be controlled based on the focus position on the film substrate detected by the autofocus system. That is, the illumination unevenness can be controlled by providing the illumination unevenness according to the defocus amount. In this case, an optical component having a density distribution is provided in the vicinity of a fly-eye lens (not shown) provided in the illumination optical system IL2, in the vicinity of the mask M2, in the vicinity of the slit 10, or in the vicinity of the film substrate P2. Gives unevenness.

  Next, a projection exposure apparatus according to a third embodiment of the present invention will be described with reference to the drawings. FIG. 15 is a diagram showing a schematic configuration of a projection exposure apparatus according to the third embodiment. In the third embodiment, reticles R1 to R5 (see FIG. 16) and a film substrate are provided for a projection optical system PL3 including a plurality of catadioptric projection optical units PLa and PLc to PLe and a projection optical unit (not shown). As an example, a step-and-scan type exposure apparatus that transfers an image of a pattern formed on reticles R1 to R5 onto a film substrate P3 coated with a photosensitive material while moving relative to (substrate) P3. explain.

  In the following description, the XYZ orthogonal coordinate system shown in FIG. 15 is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set such that the X axis and the Y axis are parallel to the film substrate P3, and the Z axis is set to a direction orthogonal to the film substrate P3. In the XYZ coordinate system in the figure, the XY plane is actually set to a plane parallel to the horizontal plane, and the Z-axis is set vertically upward. In this embodiment, the direction (scanning direction) in which the quartz mask M3 (reticles R1 to R5) and the film substrate P3 are moved is set in the X-axis direction.

  The exposure apparatus according to this embodiment includes an illumination optical system IL3 including a light source for uniformly illuminating the reticles R1 to R5. The illumination optical system IL3 includes a light source, a condenser lens that collects a light beam emitted from the light source, the same number of incident ends as the light source, and the same number of exit ends as the projection optical unit included in the projection optical system PL3 (this embodiment) 5) includes a light guide, fly eye integrator, aperture stop, condenser lens system, and the like. The light flux through the illumination optical system IL3 illuminates the quartz mask M3 (reticles R1 to R5) on which the pattern is formed in a superimposed manner. That is, the illumination optical system IL illuminates the areas of the reticles R1 to R5 on the mask M.

  No pattern is formed on the quartz mask M3, and reticles R1, R2, R3, R4, and R5 on which patterns are formed are mounted in a staggered manner as shown in FIG. The reticles R1, R3, and R5 are arranged as a first row with a predetermined interval in a direction (Y direction) orthogonal to the scanning direction, and the reticles R2, R4 are arranged as a second row with a predetermined interval in the Y direction. As shown in FIG. 17, the reticle R1 is adsorbed on the quartz mask M3 by an adsorbing portion (reticle holder) k1, and the position relative to the quartz mask M3 is adjusted by driving an actuator a1 as a position adjusting mechanism. Can do. Each of the reticles R2 to R5 is adsorbed on the quartz mask M3 by each of adsorbing portions (reticle holders) k2, k3, k4, and k5, and drives each of the actuators a2 to a5 as a position adjusting mechanism. Thus, the position with respect to the quartz mask M3 can be adjusted.

  Note that the position adjustment of the reticles R1 to R5 relative to the mask M3 by driving the actuators a1 to a5 is used for rough displacement, and the fine adjustment of the positions of the reticles R1 to R5 is a projection optical system PL3 (projection optical unit described later). This is performed by an image position adjusting mechanism (not shown) included in PLa, PLc to PLe, and a projection optical unit (not shown).

  The light from each illumination area of the reticles R1 to R5 is a plurality of (in this embodiment, five) projection optics arranged along the Y-axis direction so as to correspond to each illumination area of each reticle R1 to R5. The light enters the projection optical system PL3 including the units PLa, PLc to PLe and a projection optical unit (not shown). Here, the configurations of the projection optical units PLa, PLc to PLe and the projection optical unit (not shown) are the same. Thus, the light passing through the projection optical system PL3 including the plurality of projection optical units PLa and PLc to PLe and the projection optical unit (not shown) passes through the substrate holder (not shown) through the substrate holder (not shown) in the XY plane. An image of the pattern of the reticles R1 to R5 is formed on the film substrate P3 supported in parallel.

  A mask stage (not shown) is provided with a scanning drive system (not shown) having a long stroke for moving the mask stage along the X-axis direction that is the scanning direction. In addition, a pair of alignment drive systems (not shown) are provided for moving the mask stage by a minute amount along the Y-axis direction, which is a direction orthogonal to the scanning direction, and for rotating the mask stage by a minute amount around the Z-axis. Yes. The position coordinate of the mask stage is measured by a laser interferometer (not shown) using a movable mirror 32 and the position is controlled.

  A substrate stage (not shown) is provided with a scanning drive system (not shown) having a long stroke for moving the substrate stage along the X-axis direction which is the scanning direction. In addition, a pair of alignment drive systems (not shown) are provided for moving the substrate stage by a minute amount along the Y-axis direction, which is a direction orthogonal to the scanning direction, and rotating the substrate stage by a minute amount around the Z-axis. Yes. The position coordinate of the substrate stage is measured by a laser interferometer (not shown) using a movable mirror 34 and the position is controlled. Further, a pair of alignment systems 30a and 30b are disposed above the mask M as means for relatively aligning the quartz mask M3 and the film substrate P3 along the XY plane.

  Thus, the quartz mask M3 and the projection optical system PL3 including the plurality of projection optical units PLa and PLc to PLe and a projection optical unit (not shown) are combined with the quartz stage M3 by the action of the scanning drive system on the mask stage side and the scanning drive system on the substrate stage side. By moving the film substrate P3 integrally along the same direction (X-axis direction), a plurality of patterns on the reticles R1 to R5 are transferred (scanned exposure) to an exposure region on the film substrate P3.

  According to the projection exposure apparatus according to the third embodiment, since a plurality of reticles are placed side by side on a quartz mask and exposed through each projection optical unit, exposure can be performed efficiently.

  In the third embodiment, a plurality of reticles are arranged in a staggered pattern on the quartz mask. However, a plurality of exposure regions (exposure patterns) are formed on the quartz mask, and the plurality of exposure regions are formed. May be arranged in a staggered pattern.

  In the third embodiment, five reticles are used. For example, as shown in FIG. 18, two reticles R10 and R11 are placed on a quartz mask M3 to expose exposure areas a1 to a5. May be exposed.

  In the third embodiment, a plurality of reticles having a size that can be placed on a quartz mask are used, but a plurality of long strip-like reticles may be used. In this case, each end of each of the plurality of strip-shaped reticles is wound around a rotatable roll section, and each of the strip-shaped reticles wound around one roll section is masked by rotating these roll sections. It is transported onto the stage and sucked onto the mask stage. Further, when retracting from the mask stage, the respective roll portions are driven to rotate so that each of the belt-like reticles is conveyed to the other roll portion and wound around the other roll portion.

  In addition, although five reticles are held using the quartz mask M3, a reticle holder or a reticle adapter that can hold a plurality of reticles may be used, and the material thereof is not limited to quartz.

  In the projection exposure apparatus according to each of the embodiments described above, a transmissive mask (reticle) is used. However, a reflective mask (reticle) may be used.

  In addition, although what used the transmissive | pervious liquid crystal blind as a spatial light modulation element was shown, you may make it use a reflective liquid crystal blind, a digital micromirror device (DMD), etc. FIG.

  In the exposure apparatus according to each of the above-described embodiments, the reticle (mask) is illuminated by the illumination optical system, and the transfer pattern formed on the mask is exposed to the photosensitive substrate (plate) using the projection optical system. Thus, a micro device (semiconductor element, imaging element, liquid crystal display element, thin film magnetic head, etc.) can be manufactured. FIG. 19 is a flowchart of an example of a technique for obtaining a semiconductor device as a micro device by forming a predetermined circuit pattern on a plate or the like as a photosensitive substrate using the exposure apparatus according to each of the above embodiments. Will be described with reference to FIG.

  First, in step S301 of FIG. 19, a metal film is deposited on one lot of plates. In the next step S302, a photoresist is applied on the metal film on the one lot of plates. Thereafter, in step S303, using the exposure apparatus according to each of the above-described embodiments, the pattern image on the mask is sequentially exposed and transferred to each shot area on the one lot of plates via the projection optical system. Thereafter, in step S304, the photoresist on the one lot of plates is developed, and in step S305, etching is performed on the one lot of plates using the resist pattern as a mask to obtain a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each plate.

  Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the above-described microdevice manufacturing method, since exposure is performed using the exposure apparatus according to each of the above-described embodiments, it is possible to prevent a decrease in resolving power or contrast on the photosensitive substrate, and an extremely fine circuit A micro device having a pattern can be obtained with high accuracy. In steps S301 to S305, a metal is vapor-deposited on the plate, a resist is applied on the metal film, and exposure, development and etching processes are performed. Prior to these processes, the process is performed on the plate. It is needless to say that after forming a silicon oxide film, a resist may be applied on the silicon oxide film, and steps such as exposure, development, and etching may be performed.

  In the exposure apparatus according to each of the above-described embodiments, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). . Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. In FIG. 20, in the pattern forming step S401, a so-called photolithography step is performed in which the exposure pattern according to each of the above-described embodiments is used to transfer and expose a mask pattern onto a photosensitive substrate (such as a glass substrate coated with a resist). Executed. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S402.

  Next, in the color filter forming step S402, a large number of groups of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter formation step S402, a cell assembly step S403 is executed. In the cell assembly step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S401, the color filter obtained in the color filter formation step S402, and the like. In the cell assembly step S403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step S401 and the color filter obtained in the color filter formation step S402, and a liquid crystal panel (liquid crystal cell ).

  Thereafter, in a module assembly step S404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, since exposure is performed using the exposure apparatus according to each of the above-described embodiments, it is possible to prevent a decrease in resolving power, contrast, and the like on the photosensitive substrate. A semiconductor device having a simple circuit pattern can be obtained with high accuracy.

It is a figure which shows schematic structure of the projection exposure apparatus concerning 1st Embodiment. It is a figure which shows the system configuration | structure of the projection exposure apparatus concerning 1st Embodiment. It is a flowchart for demonstrating the exposure method of the projection exposure apparatus concerning 1st Embodiment. It is a figure for demonstrating the detection position of the focus of the exposure area | region concerning 1st Embodiment. It is a figure which shows the detection result of the focus of the exposure area | region concerning 1st Embodiment. It is a figure which shows the calculation result of the focus position of the exposure area | region concerning 1st Embodiment. It is a figure which shows the area | region where the exposure area | region concerning 1st Embodiment was divided | segmented. It is a figure which shows schematic structure of the projection exposure apparatus concerning 2nd Embodiment. It is a figure for demonstrating the change of the deflection | deviation of a film substrate when the space | interval of an arm is changed by moving the arm concerning 2nd Embodiment. It is a figure which shows the system configuration | structure of the projection exposure apparatus concerning 2nd Embodiment. It is a flowchart for demonstrating the exposure method of the projection exposure apparatus concerning 2nd Embodiment. It is a figure which shows the structure which added the substrate holding roll to the arm concerning 2nd Embodiment. It is a figure which shows the other structure of the arm concerning 2nd Embodiment. It is a figure which shows the other structure of the arm concerning 2nd Embodiment. It is a figure which shows schematic structure of the projection exposure apparatus concerning 3rd Embodiment. It is a figure which shows the structure of the mask and reticle concerning 3rd Embodiment. It is a figure which shows the structure of the drive system of the reticle concerning 3rd Embodiment. It is a figure which shows the other structure of the reticle concerning 3rd Embodiment. It is a flowchart which shows the manufacturing method of the semiconductor device as a microdevice concerning embodiment of this invention. It is a flowchart which shows the manufacturing method of the liquid crystal display element as a microdevice concerning embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Optical member, 2 ... Transmission-type liquid crystal blind, 4,14 ... Control part, 5,15 ... Memory | storage part, 6 ... Liquid crystal blind drive part, 8 ... Substrate stage drive part, 10 ... Slit, 12a, 12b ... Arm, DESCRIPTION OF SYMBOLS 16 ... Slit drive part, 18 ... 1st arm drive part, 20 ... 2nd arm drive part, IL, IL2, IL3 ... Illumination optical system, M ... Mask, M2, M3 ... Quartz mask, PL, PL2, PL3 ... Projection Optical system, AL, AL2 ... alignment system, AF, AF2 ... autofocus system, Pa, Pb, P2, P3 ... film substrate, PST ... substrate stage.

Claims (18)

In an exposure apparatus that exposes a mask pattern onto a substrate via a projection optical system,
Detecting means for detecting a position in the optical axis direction of the projection optical system on the substrate;
Selection means for selecting a region on the substrate having substantially the same position in the optical axis direction of the projection optical system on the substrate based on a detection result detected by the detection unit;
Illumination area forming means for forming an illumination area corresponding to the area on the substrate selected by the selection means;
Exposure means for exposing an area on the substrate corresponding to the illumination area formed by the illumination area forming means;
An exposure apparatus comprising: In an exposure apparatus that exposes a mask pattern onto a substrate via a projection optical system,
Deflection shape control means for controlling the deflection shape of the substrate;
Detecting means for detecting a position in an optical axis direction of the projection optical system of an exposed surface on the substrate having the deflection shape controlled by the deflection shape control means;
Illumination area forming means for forming at least one illumination area corresponding to a predetermined area on the substrate based on a detection result detected by the detection means;
Exposure means for exposing a predetermined area on the substrate based on the at least one illumination area formed by the illumination area forming means;
An exposure apparatus comprising:   The exposure apparatus according to claim 1, wherein the substrate is a photosensitive substrate having an outer diameter larger than 500 mm.   4. The exposure apparatus according to claim 2, wherein the deflection shape control means includes at least two arms that extend in a direction substantially orthogonal to a transport direction of the substrate and support the substrate.   The said illumination area | region formation means is equipped with the slit which allows illumination light to pass through, and moves the said slit relatively with respect to the said mask and the said board | substrate, The Claim 1 thru | or 4 characterized by the above-mentioned. The exposure apparatus described.   The illumination region forming means includes an optical fiber that emits illumination light, and moves an irradiation position of the illumination light emitted from the optical fiber relative to the mask and the substrate. The exposure apparatus according to any one of claims 1 to 4.   The illumination area forming means includes an optical member that forms a desired light intensity distribution, and changes the light intensity distribution of the optical member relative to the mask and the substrate. The exposure apparatus according to claim 4.   The exposure apparatus according to claim 7, wherein the optical member includes a spatial light modulation element.   9. The detection unit according to claim 1, wherein the detection unit detects a position in the optical axis direction of the projection optical system on the substrate corresponding to the illumination region formed by the illumination region forming unit. The exposure apparatus according to any one of the above.   The magnification of the pattern image of the mask formed on the substrate is adjusted by shifting the position of the substrate in the optical axis direction of the projection optical system in accordance with the illumination region formed by the illumination region forming means. The exposure apparatus according to any one of claims 1 to 9, further comprising an adjusting unit that performs the operation.   11. The exposure according to claim 1, wherein illumination unevenness is controlled based on a position of the projection optical system on the substrate detected by the detection unit in an optical axis direction. apparatus. Further comprising acquisition means for acquiring pattern information up to the previous layer exposed on the substrate;
The detection means detects a position in the optical axis direction of the projection optical system of a region having a high reflectance on the substrate based on the pattern information acquired by the acquisition means. The exposure apparatus according to any one of claims 1 to 11. A colored portion having a high reflectance in a part of the non-exposed area on the substrate;
13. The exposure apparatus according to claim 1, wherein the detection unit detects a position in the optical axis direction of the projection optical system in the coloring portion of the non-exposure area. The apparatus further comprises transport means for transporting a plurality of the substrates side by side on a substrate holder on which the substrate is placed,
The exposure apparatus according to any one of claims 1 to 13, wherein the exposure unit simultaneously exposes the plurality of substrates transported by the transport unit. In an exposure apparatus that exposes a mask pattern onto a substrate via a projection optical system,
Illumination area forming means for forming an illumination area for illuminating the mask pattern;
Exposure means for exposing an area on the substrate corresponding to the illumination area formed by the illumination area forming means,
The exposure apparatus according to claim 1, wherein the illumination region forming unit forms a pattern different from a mask pattern on the substrate.   16. The exposure apparatus according to claim 15, wherein the illumination area forming unit forms an illumination area for illuminating the mask pattern and simultaneously forms a pattern different from the mask pattern.   The exposure apparatus according to claim 15 or 16, wherein the illumination area forming unit includes a spatial light modulator. An exposure process for exposing a mask pattern onto a substrate using the exposure apparatus according to any one of claims 1 to 17,
A development step of developing the substrate exposed by the exposure step;
A method for manufacturing a microdevice, comprising:

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