TWI278722B - Exposing method, exposing device and manufacturing method for device - Google Patents

Abstract

An exposing method, exposing device and manufacturing method for devices that can keep precision with a decreased processing time and can improve throughput are provided. The exposing device is provided with alignment systems, laser interferometers and a control device. The alignment systems detect alignment marks arranged on a sensitization substrate. There are at least 3 alignment systems juxtaposed in a non-scanning direction (i.e. Y direction). The laser interferometers is juxtaposed in X direction and can detect the position of the sensitization substrate in Y direction. The alignment systems align the sensitization substrate with respect to the mask. The control device switches the laser interferometer according to the position of the sensitization substrate and chooses one of the laser interferometers corresponding to the pattern region that to be exposed on the sensitization substrate, and then the alignment systems align the substrate according to the detecting position of the laser interferometer.

Description

I27872?46pifl IX. Description of the Invention: Technical Field of the Invention The exposure method, the exposure apparatus, and the device manufacturing method of the present invention expose the pattern of the reticle to the substrate while moving the reticle and the substrate in synchronization. [Prior Art] An am and a semiconductor element is manufactured by a method of turning a pattern formed on a photomask onto a photosensitive substrate, a so-called lithography method. The exposure device with === has a photosensitive substrate mounted thereon as a projection optical system. The photosensitive substrate is printed on the photosensitive substrate to form a light-emitting device. The primary-type exposure device for simultaneously transferring the entire pattern of the photomask to the α-light substrate is used. On the one side of the synchronous scanning side, the first cover stage and the base Ξ ^^^ are placed in two ways. Among them, the liquid crystal display element is applied. In order to increase the size of Ding Pin, the smear-type exposure apparatus is provided with a plurality of projection optical systems in the main shadow area so that the adjacent end projections are quantitatively displaced and the adjacent projection area is so-called multi-transparent. :i is repeated in the direction orthogonal to the scanning direction, ie set). Multi-exposure device Lens-scanning exposure image-characteristics - 1 The exposure device can maintain a large w while maintaining a large exposure area (Fig. 1278722 1 1 246pif 1 case formation area). The field of view diaphragm located in each of the scanning type exposure devices may be, for example, a ladder opening, a louver-first scorpion, a person who washes the width _ the mouth that is usually seen by the aperture of the field of view.疋 is equal. Because the joint is repeatedly exposed, the 丨 丨 〜 ~ 尤 糸 光 光 & & & & & & & & & & & & & & & & & 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知 知. Fig. 21 shows an example of the original multi-lens scanning type exposure apparatus. As shown in Fig. 21, the exposure device Εχ has a mask support stage MST, a substrate stage PST supporting the green board, and a mask cover for the mask stage MS T. (4) The illumination optical system IL for illumination, and the image of the pattern of the mask 照明 illuminated by the exposure light EL are projected onto the plurality of projection optical systems PL a to P L supported on the photosensitive substrate P supported by the substrate stage ps τ g. The projection exposure systems PLa, PLc, PLd, PL g and the projection optical systems plb, PL d, PL f are arranged in two rows in a staggered manner, and the adjacent projection optical systems in the projection optical systems p a to PL g are mutually coupled (for example, projection optics) The systems PLa and PLb, PLb and PLc) are configured by the quantized shift elements in the X-axis direction. Further, the joint portions of the trapezoidal projection regions corresponding to the projection optical systems p L a to p L g are repeated on the photosensitive substrate p. Above the reticle stage MS T, alignment optical systems 5 〇 、 A, 5 0 Ο B for performing alignment of the mask μ and the photosensitive substrate 设有 are provided. The adjustment optical system 5 〇〇A, 5 Ο Ο B can be moved in the Y-axis direction by a drive mechanism not shown, and enters between the illumination optical system IL· and the mask 在 during the correction process, and at the time of scanning exposure Also retreat from the lighting area. Alignment optical system 5 〇〇A, 5 Ο 〇ΒDetection is formed in the mask Μ J278722 "246pif 1 = reticle alignment mark, and the substrate alignment mark formed on the photosensitive substrate p is passed through the projection optical system PL In addition to a and p L g detection q, a shift mirror 5 Q 2 a extending in the direction of the ¥ axis is provided at the end on the -X side of the substrate table PST, and the end of the -γ side is provided to extend in the recording direction. The shifting mirror 5 Q 2 b, at the position opposite to the moving mirrors 5◦2 a, 5 q 2 b respectively, is capable of detecting laser light by illuminating 5 Q 2 a, 5 〇 2 b The laser interferometers 5 〇 1 a, 5 〇 1 b at the positions of the substrate stage ps τ in the X-axis direction and the γ-axis direction. Fig. 2 2A, b, c, d to Fig. 2 4A, B, C, and D are diagrams for explaining the correction processing program and the exposure ambiguity program using the exposure device E X ]. This length is described with respect to the case where four elements (pattern formation regions) PA 1 to PA 4 are formed on the photosensitive substrate P. As shown in Figs. 22A, B, C, and D, a correction mark is formed on each of the pattern forming regions PA1 to PA4 on the photosensitive substrate p. f light device EX; first, as shown in FIG. 2A, the two substrate alignment bars ml and m2 on the side of the pattern 1 of the photosensitive substrate p are formed by the alignment optical system 5 ( () α, 5 〇〇 over the projected light (four) system PL a and PL g detected. The alignment optical system 5 OOA and 50QB also check the substrate alignment mark m丄 and the corresponding mask alignment mark tt (not shown in H2 2A). Next, as shown in FIG. 22B, the photosensitive substrate P is moved side by side by the substrate stage ps τ, and the optical system 5Q〇A, 5(} is corrected (3B is the pattern forming region; the + X side of A 1) The two substrate alignment marks m 3 and m 4 are detected by the projection light I2787226pifi system PL a and pl g. At this time, the mask M is also moved by the mask substrate MS T , and the substrate of the photosensitive substrate p is adjusted. The reticle corresponding to the mark 3 and ❿ 4 is detected together with the substrate alignment mark and m4. Then, as shown in Fig. 2 2C, the photosensitive substrate p is moved on the X side by the substrate stage P ST The alignment optical system 5 〇〇A, 5 〇〇B detects the substrate alignment mark ml'm2 of the second ® formation region pa 2 of the photosensitive plate p and the reticle alignment mark corresponding thereto. 2 2D, the photosensitive substrate P moves on the X side, and the alignment optical system 5 〇0 A, 5 Ο 〇 B detects the substrate alignment marks m3 and m4 of the pattern formation area pa 2 and the reticle alignment corresponding thereto Next, as shown in FIG. 2A, the photosensitive substrate p is stepwise moved on the Y side by the substrate stage p ST, and the alignment optical system 5 〇〇A, 5 〇〇B detects the third pattern formation. The substrate alignment marks ❿^^, m 4 of the area PA3 and the reticle alignment mark corresponding thereto. Then, as shown in Fig. 23 (b), the photosensitive substrate P moves on the + X side, and the optical system 5 is adjusted. 〇A, 5 〇0B detects the substrate alignment marks 1111 and m2 forming the region pA3 and the reticle alignment mark corresponding thereto. Then, as shown in Fig. 23 (c), the photosensitive substrate P moves on the + X side. The positive optical system 5 〇〇A, 5 〇〇b detects the substrate alignment marks of the fourth pattern forming region PA4, m3, m4, and the reticle alignment marks corresponding thereto. Then, as shown in FIG. Moving on the +X side, the alignment optical system 5 〇〇A, 5 0 QB detects the substrate alignment marks ml, m2 of the pattern formation area PA4 and the reticle alignment mark corresponding thereto. As described above, the mask is performed as described above. The stepwise shift of the 感光 and the photosensitive substrate p is 1278722 1 1 246pifl, and the substrate alignment marks m of each of the pattern forming regions PA 1 to ρ 检测 4 are detected by the two modulating optical systems 5 〇〇A, 5 〇〇B. Work ~ $4 position information and position information of the mask correction mark. Then exposure mounting ^ based on the adjustment optical system 5 QA, 5 Q QB detection, and the position error 5 of the mask M and the photosensitive substrate 每个 in each pattern forming region, image characteristics such as shift, rotation, scaling, etc., from the error 5 obtained The correction value is generated and the exposure processing is performed based on the positive value of the silk. After the two-light processing is performed, first, as shown in Fig. 24A, the exposure processing for the pattern forming region PA4 where the alignment is finally performed is performed. In other words, the substrate stage ps τ of the photosensitive substrate P and the photomask MST (not shown in the i! 24A) supporting the mask M are simultaneously irradiated with the dual-purpose exposure light M in the χ direction, Performing on the photosensitive substrate p

A = U 4 exposure processing. After the exposure processing of the pattern forming region P 4 is completed, as shown in FIG. 24 β, in order to perform the scanning exposure processing for FIG. 3, the photomask is set to be photo-sensitive == 'sensing in, moving, and the mask Y (not shown in FIG. 24B) is returned to the initial position at + } (square: shift: after the scanning exposure processing of the iris of the scanning exposure Γ1 field p A 3 of the line pair pattern forming area PA 3, as indicated by =4C, In order to perform the correct = f = rationality, the position of the mask Μ and the photosensitive substrate P is set. == The movement of the line is large. ", the return is returned to the position on the U side, and the scanning of the pattern forming area PA1 is exposed 127873⁄4 46pifi light After the exposure processing of the pattern forming region PA 1 is completed, as shown in FIG. 24D, in order to perform the scanning exposure processing on the pattern forming region pa 2, the positions of the mask Μ and the photosensitive substrate p are set. Ρ moves in the ~X direction, and the mask Μ is moved in the + χ direction in order to return to the initial position. Then, the scanning exposure processing of the pattern forming region ρ Α 2 is performed. Thus, the pattern forming area pA is completed. Exposure treatment of PA 4. And exposure The position of the photosensitive substrate ρ is detected by the laser interferometers 5 〇丄a, 5 Ο 1b on the surface of the device EXJ, and is sequentially detected by the alignment optical system 5 Ο Ο A, 5 Ο Β ρ in the pattern forming region ρ Α 1 ρ The alignment marks 111 i to m 4 of each of the four corners of A 4. Specifically, the exposure device E XI arranges the substrate stage ps τ at a predetermined position, and the first pattern forming region p on the photosensitive plate The two substrates on the side of A i are adjusted by 1, 2, m2, and the mask of the mask, which is not shown in Fig. 1 , by adjusting the optical system 5QQA, 5QC) B through the projection optics 3 and Next, the exposure device EX J moves the substrate stage P ST and adjusts the two substrates on the +X side of the region PA1 by the alignment optical system 5 Q qA, 5 〇〇^ 4, m 3 is detected by the projection optical system PL a and PL g. In the inspection of the standard, _ dry (four) inspection board transmission station base ^ bit X when detecting * 1 map * formation area PA1 = i 'exposure xj and The first pattern forming area stage "T, by adjusting the sample 'moving the substrate, especially the system 5 Ο 、 A, 5 Ο ο B inspection 12 1278722 1 1246pifl measuring the second pattern In the area 2, the substrate alignment marks ml, m2 & the reticle alignment mark corresponding thereto, and then the substrate alignment marks 111 3 and m 4 are detected. At this time, the laser interferometer also detects the position of the photosensitive substrate p. The team light device EX] sequentially detects the substrate alignment marks m1 to m 4 of the third and fourth pattern forming regions PA 3 and PA 4 in this order.

As described above, the exposure apparatus EX J --------- is called / human 攸 仃 仃 Μ Μ and the photosensitive substrate Ρ step movement, while detecting the photosensitive substrate Ρ and the mask 藉 by the laser interferometer Position and detect each correction mark of each pattern forming area ρ Α丄 ~ pa 4 must! ~m4. Then, the exposure device 美 美 美 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = The correction value is calculated from the obtained error f, and = the correction value is exposed. The money is exposed to the domain, and the final = take-up processing _ formation area P Α 4 (four) light processing is carried out. '-the surface of the mask stage Msw axis of the substrate substrate 3 of the branch light substrate ρ is the exposure area of the synchronous movement area PA4. The pattern of the sensory board P is formed to form the original The exposure apparatus and the exposure method generate the above (element f: the square f is for the exposure processing, the four pattern formation regions P are made to move with the same, and the 隹4' needs to face the mask and the photosensitive substrate 私 ν 8 times of adjustment, the required time is long. To get more from the "photosensitive base = two 46pifl 1278m pieces, the correction processing time becomes longer. When the correction processing is performed, the exposure is set to the overall birth. U long time ', on the other hand, in order to shorten the correction processing time, consider reducing the number of correction marks, and also consider the number of correction marks detected by the pattern form The above four are reduced to two for the second processing, but when the number of the correction marks detected is reduced, the fixed rod, the expansion or the orthogonality rotation characteristic cannot be accurately detected, and the adjustment is lowered. Accuracy - low, the pattern accuracy of the manufactured components: and, for - by laser While detecting the position of the photosensitive substrate wood ~pA4), the meter detects the alignment mark corresponding to each of the two-region PAs PA4, such as the papaya 1, and exposes the respective _ formation regions PA i to p A 4 to the surface. When the size sensor P is increased in size, in order to detect the position of each of the pattern forming regions PA1 to PA4, it is necessary to increase the size of the lens mirror as the size of the photosensitive substrate P is increased, that is, to lengthen the moving mirror. The enlargement will produce the processing precision of the moving surface of the moving mirror, etc. The processing precision of the moving mirror is also considered to make the short moving mirror and the respective pattern forming area =, and at the same time, the moving mirrors are provided with a plurality of clock-interfering interferometers, and two or more laser interferometers are used. It is used for the photoreceptor substrate p (the lf-ray interferometer for pattern detection performs position detection, but the replacement error occurs in the material, and the position detection with high precision cannot be performed. [Inventive content] 14 I278722pifi The purpose of this book is to provide a sweet-hearted maintenance. The accuracy is shortened by the correction processing time, one side method, the exposure wire setting, and the component manufacturing method. The exposure of the improved Ii property is to solve the above problem, and the present invention adopts the pair of It should be composed of the following: In the first method shown in Fig. 1, in the first method, the mask (M) and the substrate (p) are moved synchronously in the direction 1 (X) - the exposure of the pattern of (M) Method, the characteristic=P) exposure of a plurality of positively-adjusted labels on the first cover (mi~m 6 ) 疋 pairs; other = on the base, (P) on the (X) intersection in the second direction (γ) 5 ΐ 5~ At the side of the station with the younger brother, there are at least three side-by-side arrangements of the repair week: 统1 (AL1~AL6^ test multiple positions. The money shirt (five) and the substrate (P) In addition, the present invention Exposure device ((M) and substrate (P) in the first direction (χ) 5 = move the mask ^ / -η \ <人) synchronously - face * substrate (P) exposure mask (M) _ Detecting a plurality of positions on the substrate (7); (:= θ) multiple alignment systems (AIj丄~ positive system (AL1 to AL6) are juxtaposed at least in the direction of the ^2 direction (Y) There are three. ° (X) The parent of the parent fork ^ Invented, in the scanning direction of the forest and the substrate, that is, the i-th direction of the parent, the direction of the parent, that is, the second direction = ratio: no need to reduce the detection = the original compared to the reduction of the mail · The number of _ actions. Therefore, it is possible to shorten the adjustment processing time while maintaining the 1278722 1 1 246pif1 adjustment accuracy. The element manufacturing method of the present invention is characterized in that the exposure method included or the exposure apparatus described above exposes the element pattern of the net cover (5) to the substrate field γ to first develop the exposed substrate (Ρ). (2. 4th wide (2〇4), sleep light use Ming') After the correction process is performed with high precision, the time is shortened, so that the L-factor at the time of component manufacture can be improved. The cover (M) and the substrate (p) are moved synchronously, and the substrate (P) is exposed to light (Μ) 2忒Ρ Γ 'characterized by dividing the substrate (1) into a plurality of = :=(分区1~ρΑ9) For each partition (2): After the mask ΓΜ, the first cover (Μ) and the substrate (Ρ) are aligned, the pattern of the first cover (Μ) is exposed on the substrate (7). Correction (the position of the kisser t sub-subsequently in each partition is adjusted in each partition and multi-partition and processed separately, and it is reasonable to correct the processing and the position of the exposure place. Hire the above-mentioned treatment (correction processing and exposure processing) for the test; set:::: cut the position of the occupation and take care of the processing of one partition (correction treatment and exposure) Error. I2787226pifl The exposure apparatus of the present invention (Ex, θ is also produced by a 士 〆 〆 疋 疋 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步 同步In the 1 direction (X) upper sub-column configuration, it is possible to detect a plurality of positions in the second direction (Υ) (9) "/^丄万门^, . D 0 Λ J where the intersection with (X) is detected. γ, the correction unit (AL) for the mask (Μ) alignment substrate (ρ), and the substrate position detecting device (two sets of P yi~py 3, control switching multiple Α y y 3) In the substrate (P) field (PA1 to PA9), one of the plurality of position detections I u = - to P73 is selected 'based on the detection bit of the position detecting device (9) _ (AL) adjusting material ONT). According to the present invention, the position detecting device is disposed in the first direction of the scanning direction, and the plurality of position detecting devices are switched in accordance with the position of the substrate. That is, the health mirror is short, and it is also detected by the position detecting device used in the position detection of the county board, and the position detection is performed in one of the plurality of exposure areas. Then, by exposing the first exposure in the plurality of exposure areas In the region, the detection result by the first position detecting device is performed by the adjustment unit, and the exposure is performed after the processing, and the exposure time is adjusted by the correction unit based on the detection result of the second position detection device. The exposure can be performed on one exposure area (pattern formation area) = no switching operation of a plurality of position detecting devices is performed, and one position is measured: the position detection can be performed, so that each exposure area is used. It is possible to perform position detection and exposure 2787226ριη light processing with high precision without the switching error of the device and the clothing.

The component manufacturing method of the present invention is characterized in that it comprises an exposure method using the above-described exposure method or the above-described exposure apparatus (E-cover (5) (four) piece pattern exposure to the substrate (p) (2 (; 4f the exposed substrate (p) Engineering (2 〇 4). According to the present invention, it is possible to perform high-precision J correction processing and exposure processing in each of a plurality of exposure regions, so that the pattern precision can be improved. And other objects, features, and advantages can be described in detail below with reference to the accompanying drawings, and the following detailed description is given to the accompanying drawings: [Embodiment] Hereinafter, an exposure apparatus according to the present invention will be described with reference to the drawings. 1 to FIG. 7 is a schematic view showing an embodiment of an exposure apparatus of the present invention. FIG. 2 is a schematic configuration diagram. In FIGS. 1 and 2, the exposure apparatus Ex is provided with a support formation. The mask stage MST of the mask 图 of Fig. 2, the substrate stage p st supporting the green board p, and the mask material supported by the fresh stage mst by the exposure light EL, Will illuminate the mask by exposure light e L The projection optical system pL projected on the photosensitive substrate P supported by the substrate stage ps τ and the alignment correction system AL for detecting the correction of the photosensitive substrate p. The detection support mask _ the mask is provided. A multi-radiation interferometer I27872?6pifl (=3) Mxl'Mx2 at the position of the stage MST in the X-axis direction, and a laser interferometer for detecting the position of the reticle stage msT in the Y-axis direction (position detection device) 1. A plurality of laser interferometers (position detecting devices) for detecting the position of the substrate stage PSTM in the axial direction of the photosensitive substrate p. P X丄p 2. The substrate carrier 1 is detected in the 0-axis direction. (Position detecting device) Pyl, Py2, p^. The mask μ supported by the cover stage MST and the photosensitive substrate 支援 supported by the substrate stage ps τ are arranged in the positional relationship of the common unit by the projection optical system PL. There are a plurality of illumination optical systems IL, in this embodiment, seven illumination system modules IM (IMa~IMg). In addition, the projection optical system pL also has a number corresponding to the illumination system module I, which is 7 projections in this embodiment. Optical lines PL a to PLg. Each projection light (10) is unified from pL a to PL g and each The light system substrate P is coated on the _ plate (the substrate). The exposure device EX of the present embodiment is synchronized with the exposure light EL. The scanning type exposure apparatus of the mobile shirt Μ and the substrate p-surface ♦ line scanning exposure is described in the following. The light extraction direction of the projection light source system L is the Z-axis direction, and the vertical direction of the z-axis direction is the mask. The synchronous movement direction of M and the photosensitive substrate p is the X-axis direction (first direction, scanning direction), and the orthogonal direction of the Z-axis direction and the X-axis direction (scanning direction) is the Y-axis direction (second direction, non-scanning direction) . Further, each direction around the X-axis, around the Y-axis, and around the Z-axis is the θχ direction, the direction, and the ΘZ direction. As shown in Fig. 2, the illumination optical system IL is provided with a light source 1 such as an ultrahigh pressure mercury lamp 46pifl 1278723⁄4, an elliptical mirror 1a that collects a light beam emitted from the light source 1, and a light collected by the elliptical mirror 1a. The beam of light at the wavelength required for exposure is reflected, and the dichroic mirror 2 that transmits the beam of other wavelengths, and the wavelength of the beam reflected by the dichroic mirror 2, only the wavelength required for exposure (usually The long selection filter H 3 passing through at least one of the g, h, and 1 lines) branches the light beam from the wavelength clearing filter 3 into a 夕i卞, and the present embodiment is seven, passing through the mirror 5 The material is incident on the device 4 of each of the illumination system modules iMa to IMg.糸, the first lighting system module I Μ is provided in plurality, in the present embodiment, there are 7 ιΜ a~I Mg (but in FIG. 2, for convenience only for the fish; the axis direction is maintained - fixed Interval configuration. However, L = ί multiple lighting system modules 1M a~I Μ g each of the light ^ jEL 'different small area of the submarine bright mask Mjl (Zhaoming Xianxue lighting area). Month 6 &gt 9. Illumination shutter 6 in the right eye lens 8, the condenser is retracted from the configuration. Zhaoming decided to p ^ ° and the downstream side of the optical path of 4, the light path into the light, when the liberation "will be the light beam from the path The illumination is erected by the illumination '==. The illumination shutter 6 is connected to a. The shutter drive unit 6 is configured to move the shutter drive unit 6 in the green forward and backward movement. In addition, the illumination adjustment control unit 10 ..., A light is provided on the 1 Ma~1 Mg. The light amount adjusting mechanism 10 adjusts the exposure amount of each optical path by setting the illuminance of the fixed beam of 20 1278722 1 1246 pifl per optical path, and is provided with a semi-transparent mirror ( Half-mirror)l 1, detector (detect〇r) 1 2, tears crying

3. Filter drive unit 14. The semi-transparent mirror 丄丄 is disposed in the optical path between the filter &amp; crying 1 3 and the relay lens 7, and passes through the portion of the filter 丄': &amp; Each detector i 2 independently detects the illuminance of the incident beam, and outputs the detected illuminance signal to the control device C. As shown in FIG. 3, the filter 13 is on the glass plate 13a by Cr or the like. The strip-shaped pattern is formed such that the transmittance gradually changes in a linear shape in a range along the z-axis direction, and is disposed between the illumination fast in each optical path and the semi-transparent half mirror 11. ^, these translucent half mirrors 1 1 , detectors 丄 2 and filters 丄 3 are respectively provided on each of a plurality of optical paths. The filter driving unit 4 moves the filter 13 in the X-axis direction based on the instruction of the control unit CONT. Then, by moving the filter 13 by the filter driving unit 14, the amount of light of each optical path is adjusted. The light beam transmitted through the light amount adjusting mechanism 1 passes through the relay lens 7 to reach the fly-eye lens 8. The fly-eye lens 8 forms a secondary light source on the exit surface side, and the illuminating region 9 can illuminate the illumination area of the mask μ by uniform illuminance. Then, the exposure light passing through the condensing mirror 9 passes through the catadioptric optical system having the right-angle prism 16 , the lens system 17 , and the concave mirror 18 in the illumination system module, and then the mask 照明 is illuminated by the predetermined illumination region. The mask μ illuminates different illumination regions by transmitting the respective exposure lights E L of the illumination system modules IM a to I Mg . 1278722 1 l246pifl ^The reticle stage MS T supporting the mask M has a long stroke (str〇ke) in the X-axis direction in which one-dimensional scanning of the exposure should be performed, and is determined in the Y-axis direction orthogonal to the scanning direction. Distance to the itinerary. As shown in Fig. 2, the photomask stage Ms T is provided with a photomask stage drive unit Ms TD for moving the photomask stage MS T in the X-axis direction and the γ-axis direction. The reticle stage drive unit MS TD is controlled by the control unit C QNT . As shown in Fig. JL.- 各个 The end faces of the X-axis direction and the γ-axis direction on the hoodless stage MS are respectively provided with moving mirrors 3 2 a, 3 2 b in the direction of the orthogonal direction. There are a plurality of moving mirrors 3 2 a. In this embodiment, the solid-missing interferometers Μχ1 and Μχ2# are arranged. Further, a laser interferometer 配置 is disposed opposite to the moving mirror 2 b. The laser interferometer μX j = X 2 respectively irradiates the moving mirror 3 2 a with laser light, detecting and moving: the distance of the mountain 3. The detection results of the misfire interferometers Mx 1 and Mx 2 are set to c〇NT, and the control device c〇nt is based on the detection results of the clock shots: X1 and Mx 2, and the mask stage MS T is involved: ???:= The amount of rotation around the 5 and 2 axes. In addition, Laser dry 2 b from the M t moving mirror 3 2 b illuminate the laser light, check the moving mirror 3 « c 〇 heart recording interference _y 1 the inspection result is output to the control, the control device = ^ gallbladder axis - ^ 1 T straw is used to monitor the position (posture) of the reticle stage MST from the laser interferometers Mx丄, Μχ 2, and Di, and 1 ° is at the desired position (posture). 22 1278722 1 1246pifl The exposure light E L passing through the mask M is incident on each of the projection optical systems p l a to P L g . The projection optical system p L a to PL· g is an image in which the pattern image existing in the illumination region of the mask M is imaged on the photosensitive substrate p, and the exposure pattern image is projected on a specific region (projection region) of the photosensitive substrate, and each illumination The system modules IMa~I Mg are correspondingly arranged.

As shown in Fig. 1, among the plurality of projection optical systems P L a to p L g , the projection optical systems P optical systems PLb, PLd, and PL f are arranged in two rows in a staggered manner. That is, each of the projection optical systems PL a to plg arranged in a staggered manner causes the adjacent projection optical systems to shift the element configuration in the Y-axis direction with respect to each other (for example, the projection optical systems p L a and plb, PL b and PL c ). . Each of the projection optical systems PL a to PL g transmits a plurality of exposure lights E l emitted from the illumination system modules j Ma to I Mg and transmitted through the mask , on the photosensitive substrate p placed on the substrate stage PST. A pattern image of the projection mask M. That is, the exposure image EB of each of the projection optical systems P L a to p l g is imaged in a different projection area on the photosensitive substrate p, and the pattern image of the illumination region corresponding to the mask μ is imaged with predetermined imaging characteristics. As shown in Fig. 2, each of the projection optical systems p l a to P L g has an image shifting device 19, two sets of catadioptric optical systems 2 1, 2 2, a field stop 20, and a magnification adjusting device 23. The image shifting device 19 rotates the pattern image of the mask Μ in the γ-axis direction or the axial direction by, for example, two parallel plane glass plates rotating around the X-axis or around the γ-axis. The exposure light E L that has passed through the mask 透过 passes through the image shifting device 19 and is incident on the first group of catadioptric optical systems 21. 23 12787E The catadioptric optical system 21 is an intermediate image of a pattern forming the mask μ, and includes a right-angle prism 24, a lens system 25, and a concave mirror 26. The right-angle prism 24 is rotatable around the x-axis, and the pattern of the mask μ can be rotated. A field stop 阑 2 配置 is arranged at the intermediate image position. The field of view 阑2 〇 is a projection area set on the photosensitive substrate ,, and the mask Μ and the photosensitive substrate ρ are disposed at substantially conjugate positions in the projection optical system ρ L . The light beam transmitted through the field of view 阑 20 is incident on the second group of catadioptric optical systems 2 2 . The catadioptric optical system 2 and the catadioptric optical system 2 are provided with a right-angle prism 27, a lens system 28, and a concave mirror 29. The right-angle prism 2 7 can also rotate freely around the x-axis to rotate the pattern image of the mask. The exposure light EL emitted from the catadioptric light (10) 2 2 passes through the magnification adjusting device 2 3 'and on the wire plate ρ The pattern image of the light (4) is imaged by a positive image. The magnification adjusting device 23 is composed of, for example, a plano-convex lens and a two-convex lens: a plano-convex lens, which is located in the plano-convex lens and the 'concave lens'. The convex lens moves in the two directions to change the relative position, and changes the magnification of the pattern image of the mask Μ.

A substrate stage stage drive unit P S T D that moves in the axial direction and the γ-axis direction. The substrate stage p s τ supporting the photosensitive substrate 有 holds the photosensitive substrate 有. Substrate

TfS! Pick up, niece, 仏 仏 丄 丄 丄 尤 尤 T T T T T T T T T 在 在 在 在 在Base 24 1278722 Η 246pif1 The onboard stage drive unit s s Τ D is controlled by the control unit c ◦Ν τ. Further, the substrate stage Ρ s Τ can also move in the x-axis direction and in the direction of 0 χ, 0 γ, β ζ. As shown in Fig. 1, moving mirrors (position detecting means) 34a, 34b are provided in the orthogonal directions in the respective end edges of the substrate stage P ST in the x-axis direction and the z-axis direction. A plurality of moving mirrors 34a extending in the direction of the x-axis are arranged in the opposite direction, and in this embodiment, two recording dry sensors Ρ X1 Ρ X 2 are provided. Further, a plurality of moving mirrors 34b extending in the X-axis direction are disposed oppositely, and in the present embodiment, three laser interferometers ρyl, Py2, and Py3 are provided. Here, a plurality of laser interferometers p y , P y 2, and P y 3 are arranged side by side at equal intervals in the X-axis direction. The position detecting means for detecting the position of the second substrate P in the X-axis direction (first direction) is constituted by the pulsator 341 and the laser interferometers 13: 1, 1, and 1:2. The position detecting means for detecting the position of the photosensitive substrate ρ in the γ-axis direction (second direction) by the moving mirror 34b and the laser interferometers py1, py2, ^ constitutes a position detecting means. The interferometers Ρχ1 and Ρχ2 respectively detect the wrong light to = 3 4 a, and detect and move the distance of the mirror 34 4 a. Dreams see the instrument Ρ X1, Ρ X 2 test results are output to the control skirt ^ ^ dry

T, the control unit CONT determines the amount of rotation of the substrate stage P 87^ around the position ^ in the axial direction based on the detection results of the laser interferometers p x i and ρ χ N . In addition, the laser interferometer P y 丄 py 3 axis mirror 3 4 b illuminates the laser light, and the distance between the detecting and moving mirrors 3 4 b is equal to that of the interferometer Py 1 to Py 3 (four) control money, shoot NT, control The device C〇NT is based on the laser interferometer py Ί 〇丄 py 3 25 ^ 278722 &quot; 246 pifl loose test results 'after the substrate stage p, the (4) Department of the "(10) squat position in the axial direction.

The work clothes set CONT error is from the misalignment interferometer ρ completion, P (time = ~ P 7 3 output monitoring substrate stage P s τ position =), sub-control domain object transfer goods = ST Set to the desired position (posture) D and set the substrate Y-axis: f: control t to C〇N, in accordance with the movement of the substrate stage pST when the substrate stage pst is detected, that is, according to the setting &quot; The substrate carrier Ps of the board is used in the position of the x-axis direction of the laser interferometer py 1 to py 3 for position detection of the reticle stage drive unit MsTD based TD by the control device C〇NT 八Two = mouth Hezhou A are independently controlled, and the reticle stage soil plate loading port PST can be separately based on the reticle stage driving part Ms TD and the substrate stage P part _ _ Move independently. Then, the control set CQNT can control the two drives #PSTD MSTD' by the surface monitoring of the position of the reticle stage MST and the substrate stage psT. The reticle μ and the photosensitive substrate p can be arbitrarily attached to the projection optical system PL ' The scanning speed (synchronous (four) speed) moves synchronously in the X-axis direction. The projection areas 5 0 a to 5 o g of the projection light (10) system p L a to p L g on the photosensitive substrate are set to a predetermined shape, and in this example, a trapezoidal shape. As shown in Fig. 1, the projection areas 5 0 a, 5 0 c, 5 0 e, 5 〇 g and the projection areas 50b, 50d, 50 f are arranged oppositely in the X-axis direction, and the projection areas 5 Q a to 5 Q g is arranged in parallel so that the ends (boundary portions, joint portions) of the adjacent projection 26 1278722 1 1246pifl region are superposed on each other in the γ-axis direction. Then, by arranging the projection regions 5 〇 a to 5 〇 g and the two overlapping portions in the Y-axis direction to be arranged in parallel, the total width of the projection regions in the x-axis direction is set to be substantially equal. Thereby, the exposure amount at the time of scanning the exposure in the x-axis direction becomes equal. Thus, by providing a repetitive region (joining portion) in which the projection regions 5 ◦ a to 5 〇g = overlap by the projection optical systems PL a to PL g are provided, the change in the optical aberration of the joint portion and the change in the illuminance can be smoothed. get on. Next, the explanation will be made regarding the adjustment system AL. The alignment system AL detects the alignment mark (substrate alignment mark) provided on the photosensitive substrate p, and as shown in FIGS. 1 and 2, the projection optical systems P La, PLc, PLe, and PL are arranged in two rows. g and the projection optical systems PL b, PL d, and PL f are disposed opposite to the photosensitive substrate p. The alignment system AL is arranged in parallel in the Y-axis direction (second direction), and detects a plurality of substrate alignment marks provided on the photosensitive substrate P. Further, between the projection optical systems p La'pLc'pLe, PLg and the projection optical systems PLb, PLci, and PL f arranged in two rows, a position is detected with the photosensitive substrate P, and the position of the photosensitive substrate in the PI z-axis direction is provided. The substrate side autofocus detection system (AIM^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Each of the substrate side a F detecting system 60 and the reticle = AF detecting system 7 〇 are also arranged in parallel in the γ-axis direction. Here, the 'multiple alignment system A L, the substrate side A F detection system 6 〇 and the mask A F detection system 7 are as shown in the figure! As shown in the figure, the unit 27 1278722 1 1246pifl 1匕n is supported by the bracket η, and the AF detection system, 0 and the correction system AL, which are supported by the bracket H, are preferably referred to as "modulation units." Fig. 4 is an oblique view of the alignment unit u, a correction system a in the b, a substrate side af detection system 6 and a B1 bias system 7. The mU of the mask M and the photosensitive substrate P are not. Here, 5A shows the positional relationship between the mask m and the mask side 八, 、, Q. FIG. 5B is a cross-sectional view of the aligning unit U of FIG. 4, and FIG. 5C is a view of the supporting substrate carrier viewed from the upper side (+2 side). A plan view of the stage PST. The cover side AF detection system 7 〇 shown in Fig. 5A corresponds to a cross-sectional view taken along line B - B of Fig. 4. Fig. t and Fig. 5B show the adjustment system AL (AL 1 to AL non-scan) The &amp; direction, that is, a plurality of y-axis directions are arranged in parallel. In the present embodiment, the optical system positive system AL b red 6 is arranged in two rows: a, PLc, pLe, PL g and projection optics, PLd Between PL and F, it is arranged along the parallel direction of the technical shirt area 5 qa 〜5 〇g of the projection optical system PL·g. As shown in Fig. 5B, a plurality of parallel alignment systems in the γ-axis direction are aligned. 1 AL 6 'Alignment system in the center of the Y-axis direction AL 2 to a L 5 No = Inside of the shadow optical system PL (PL a to pLg), the side of the 丫 axis, the adjustment system of the side, L L, AL 6 is disposed in the projection optical system p L ^ Γ here, as shown in FIGS. 5β and 5c, among the plurality of alignment systems AL and 2 L 6 , the outer two correction systems A; the interval between the l丄 and the eight l 6 is set. It has the same length as the photosensitive substrate in the direction of the ¥ axis. The other 28 1278722 1 1246pifl 5 weeks positive system AL 1 and A direction length is long (external, as shown in Figures 5 A and 5B, the outer 2 L 6 interval It is set to be larger than the length of the mask in the Y-axis direction of the shaft mask ). ^======================================================================== Positive standard (6) ml~m6. 'In the optical substrate p, ΐ6 is arranged along the γ-axis direction, and the interval is formed in the X-axis direction.

There are 36 correction marks 14 formed. In addition, the towel is adjusted (4) φ, but it can also be marked with a cross-shaped "+, or box-shaped" □, (the present embodiment is on the wire plate, corresponding to 6 in the γ-axis direction and 歹i The adjustment mark, ml~m6 is provided with the adjustment system AL 卜.

After that, each of the six correction systems AL丄~AL6 and each of the adjustment marks are set in the opposite direction of the ml~m6, and the adjustment system a丄~8^6 is used to adjust the mark m1. Each of the opposite states of ~m 6 can be used to detect each of the calibration flags i~m 6 . In other words, in the present embodiment, the arrangement (interval) of the alignment system is set to 1 to 1 based on the arrangement (interval) of the alignment marks m i to m 6 formed on the photosensitive substrate p. As shown in Fig. 4 and Fig. 5B, a plurality of substrate-side AF detecting systems 6 〇 (6 〇 a to 60 g) are provided on both sides of the alignment system A L 丄 to a L 6 in the X-axis direction. In the present embodiment, the substrate side AF detecting system is provided with seven 60a to 6〇g. The substrate-side aF detecting system 6 0 a to 6 〇g is disposed at a position opposite to the photosensitive substrate p supported by the substrate stage p S τ 'to detect the orthogonal direction of the photosensitive substrate p on the exposure surface, that is, in the Z-axis The position of the direction. Multiple substrate side AF detection systems 6 0 a~6 〇g 29 I2787226pm The 'AF detection systems 60a, 60b, 60d, 60f, 60 g are arranged side by side in the Y-axis direction, while the AF detection system 6 0 c, 6 0 e Arranged side by side in the Y-axis direction. Moreover, the two columns of aF detection systems 6 Ο a, 60 b, 60 d, 60 f, 60 g, and A F detection systems 6 0 c, 60 0 e will adjust the system A L (AL1 to AL6). In the plurality of substrate-side AF detecting systems 6 0 to 600 g, the substrate-side AF detecting systems 6 0 b to 60 f at the center in the Y-axis direction are provided inside the projection optical system PL (PL a to PL g ), Y The substrate AF detecting systems 6 0 a and 60 0 g on both sides in the axial direction are provided outside the projection optical system PL (PLa to PLg). Here, each of the outer substrate side a F detecting systems 6 0 a and 60 g is disposed adjacent to each of the outer two correcting systems A L 1 and A L 6 of the plurality of correcting systems A L1 to A L 6 . The interval between the outer two substrate-side AF detecting systems 6 0 a and 60 g is also set to be substantially equal to the length of the photosensitive substrate p in the γ-axis direction. Further, the substrate-side A F detecting systems 6 0 to 60 f provided on the inner side of the projection optical system P L are arranged in two rows in a staggered manner, and are arranged at substantially equal intervals in the Y-axis direction. The respective detection results of the substrate side AF detecting system 6 0 a to 6 0 g are output to the control device CONT, and the control device CONT determines the photosensitive substrate P in the Z axis based on the detection result of the substrate side AF detecting system 6 0 to 600 g. The position of the direction. Further, since the substrate-side AF detecting systems 6 〇a to 650 are arranged two-dimensionally in the X-axis direction and the Y-axis direction, the control device CONT is based on the plurality of substrate-side AF detecting systems 6 〇a to 6 〇 30 1278722 1 1246pifl g The test result 'mechanical silk board? The posture in the direction of the wire closing and the direction around the γ axis. The control device C〇NT drives the substrate carrier driving portion P S TD based on the obtained position at the x-axis and the direction around the X-axis and the γ-axis, and performs the photosensitive substrate. At the position of the 2-axis direction, the white-mouth spoon is adjusted and the adjustment of the posture around the X-axis and the γ-axis is corrected. As shown in Fig. 4 and Fig. 5A, a plurality of light AF detecting systems 7A (7〇a to 7〇d) are provided on the adjusting unit υ. In the present embodiment: four mask side AF detecting systems 7 〇 a to 7 〇 d are provided. The mask side a F detecting system 7 Q a to 7 Q d is provided at a position where the mask holder Ms τ supports the opposite direction of the mask, and detects the pattern forming surface/father direction of the mask ', that is, The position in the direction of the x-axis. Each of the plurality of mask side Af detection systems 7^a to 7◦d is arranged side by side at equal intervals in the γ-axis direction. This morning, as shown in Fig. 5A, the mask side a F detection system 7 〇a~7 〇cm^^_^L(pLa~pLg)_^ ^::: two cover side eight ^^ detection system" The interval between (5) is set to be approximately equal to the length of the mask Μ in the Y-axis direction. &gt; Figure 6 is a schematic configuration diagram of the adjustment system aL. In addition, other, the Orthodox AL2 to AL6 are also adjusted. The configuration of the positive system ali is the same. As shown by =, the correction system AL tool is provided with a modulating light source 81 composed of an emission detection test 屮 ΐ ί ΐ 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The light guiding device 8 of the optical fiber of the lens 83 has a translucent half mirror 8 4" on the downstream side of the optical path of the lens 83. The + half mirror 84 and the contact member, that is, the photosensitive substrate ρ (adjusted 1277822 1 1246pifl Between the marks ml to m6), the detection light that has passed through the translucent half mirror 84 is irradiated onto the objective lens 85 on the photosensitive substrate P, and the photosensitive substrate P (corrected standard) is generated by the irradiation of the detection light. The reflected light is guided through the translucent half mirror 84. The deflecting mirror 86, the beam splitter (branch device) that branches the reflected light from the deflecting mirror 86, borrows The two beams branched by the beam splitter 81 have a light-weighting control of the towel. The magnification is adjusted by the light receiving system 8 8 and the other is a wire-shaped high-profile shirt - the optical system 8 9 . The low magnification adjustment light receiving system 8 8 has a low magnification lens system 8 8A and a low magnification imaging element (CCD) 88B, and can measure a wide area on the photosensitive substrate P with a predetermined accuracy. The high-magnification-adjusting light-receiving system 8 9 has a high-magnification lens pure 8 9A and a high-magnification imaging element (CD) 89B, which can measure the narrow region of the photosensitive substrate p in the south precision. These low-magnification adjustment light receiving systems 88A and high magnification adjustment The light received by the light beam 8 B is disposed coaxially. Moreover, the light (reflected light) generated by the irradiation of the photosensitive substrate P (substrate alignment mark) by the detection light is adjusted to be low L rate „周正叉光系统8 8 And the high-magnification adjustment light receiving system 8 9 receives light respectively. "The tone-like tone-modulating system 8 8 is based on the light information from the wide-area region of the photosensitive substrate p irradiated with the detection light by the correction, and the coarse-precision measurement is performed on the ml (m2 to m6) On the other hand, the high-magnification-adjusting light-receiving system 8 is based on the light from the narrow region of the photosensitive substrate P irradiated with the detection light by the correction. The position of the positive mark ml (m2~m6) is precisely adjusted. The low magnification adjustment light receiving system 8 8 and the high magnification 32 Π78722 &quot;246pif 1 two-tone positive light receiving system 8 9 respectively output the light receiving signal to the control device (3) N T = control device (3) ^ ^ based on the adjustment of the light receiving system 8 8 , 8 9 each optical signal for image processing, to find the mark position: # 信号. Here, the second system j C Ο Τ Τ reference by low magnification adjustment light receiving system 8 The detection result of 8 is adjusted, and the precise adjustment processing of the light receiving system 8 9 is performed by the high magnification. When the field is used to determine the position information by the AL system, the image information can be corrected by the image= Find the position of the mark. In addition, as a method of seeking marks and bits A graphics matching method can be used. That is, the control device c 〇 NT continues the memory device (not shown) with the image of the template, by the shape of the coordinates of the pattern matching the template. (At the position of the loading coordinate system, the position of the coordinate system is moved.) The control device c〇NT uses the coordinate value to engage the amount of deviation generated during the exposure and the coincident exposure, and the substrate stage is provided by the next exposure. The driving unit PS TD improves the positional matching accuracy by correcting the parameters. In the above-mentioned correction system AL1 (AL2 to AL6), the light source 8^, the light guiding device 8 2 and the relay lens system 8 3 constitute the light of the alignment system.糸,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The light emitted from i may be branched by a plurality of devices (fibers) 82, and the plurality of branches of the light may be supplied to the alignment systems A^1 to AL6, respectively. It is preferable that the detection light for the photosensitive substrate is non-photosensitive to be non-photosensitive, and the light emitted from the light source 81 formed of a halogen lamp may be provided on the optical path between the _81 and the sensation 33 1278722 optical substrate P. The configuration of a filter of light of a specific wavelength in (white light). Fig. 7 is a schematic block diagram showing the substrate side A F detecting system 6 〇 a. Further, the other substrate side A F detecting systems 6 〇 b to 60 g and the mask side A F detecting systems 7 0 a to 7 0 d have the same configuration as the A F detecting system 60 a. As shown in Fig. 7, the AF detection system β 〇a includes an AF light source 61 that is configured by an LED that emits AF-detecting light, and a light-emitting lens system 62 that causes the detection light emitted from the light source 61 to enter. The light passing through the light-receiving lens system 6 2 is guided from the oblique direction to the mirror 63 of the photosensitive substrate (or the mask M), and the photosensitive substrate P (or the light is irradiated based on the detection light irradiated by the mirror 63). The reflected light generated by the cover M) is guided by the mirror 64 of the % 'system 65 and the light-carrying element (CCD) 6 6 is passed through the light of the light receiving system 65. The light-transmitting lens system 62 shapes the detection light into, for example, a slit shape and irradiates the photosensitive substrate p. Here,

When the board is multiplied (for example, 1〇), the shift ΔΖ can be N times (1 ◦ times) _ degree check ^ 1 1 set A B. Here, the magnification of the surface facing the emission surface side is set to the imaging element 6 to the photosensitive substrate p 34 1278722 1 1246pifl in the AF detection system 6〇a (6〇b~6〇g, 7〇a~7 0d) The light source 61, the light transmitting and transmitting unit (6), and the mirror 63 constitute a light transmitting system of the AF detecting system, and the mirror 64, the light receiving lens system 65, and the image sensor 66 constitute a light receiving system of the aF detecting system. Further, the 'S source 6 1 may be configured for each of a plurality of a F detection systems 6 〇a to 6 Og (7〇a to 7Qd), or may be borrowed from the light emitted from the work source 6 1 . A plurality of light guiding devices (optical fibers) are branched, and a plurality of branches of the light are supplied to a plurality of AF lines. The detection light of A f is also the ideal for the photoresist of the ray plate P, and it is possible to set the filter of the specific wavelength of the light emitted from the light source Θ 1 on the light source 61 and the photosensitive substrate p&lt; The composition of the light. 〃彳', however, the alignment system AL in the present embodiment is off-centerline, and the relative position of the mask M and the substrate alignment system, i.e., the secret amount, is produced when the alignment process is performed. Hereinafter, the _baseline measurement method will be described. As shown in Fig. 1, Fig. 2, and Figs. 5A, B, and C, the mask is provided with a mark for baseline measurement (mask side Α; [s mark,) 9 〇, the substrate stage P ST is provided with a reference member 9 2 having a mark for the base line measurement (substrate side a s mark) 9 1 . The formation position (height) of the substrate side a I s mark 91 in the Z-axis direction is set to slightly coincide with the surface (exposure =) of the photosensitive substrate p. Further, the reticle side A 丨 s mark 9 〇 is provided in a predetermined positional relationship with respect to the characteristic position (for example, the center position) of the reticle 1 . The mask side A I S mark 90 and the substrate side A; [s flag 9 1 correspond to each other, and are arranged in parallel in the Y-axis direction. As shown in FIG. 2, the reference member 9 1278722 H246pifi 4 is provided with a lens system 9 5 . A I Sf optical system 9 imaging element (c c D ) 9 6 : The light of the lens system and the system 9 is received by light. Next, referring to Figs. 8a, b, &gt; as shown in Fig. 8A, the base-baseline measurement program. The stone is detected on the substrate stage p S double measuring system 60 and has a distance between the parts 92; the reference frame of the standard has a mask side AIS mark 9 〇 detection system 7 〇 detection and setting C〇NT Based on the distance between the substrate sides AF f M . Each of the detections of the control system 7 Q detects a fruit *...Μ Q and the mask side A F detection distance (step SA1). , °, the mask 乂 and the reference member 9.2 of this day, support the ray of the light i 干涉 干涉 MX ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Detect 'substrate stage p test. That is to say, light _ (two =, fy 1 is checked by the instrument μ y 1, _ stage ps MST) can be detected by any of the clock shot dry p", Py3, as shown in Figure 8B, the direction The automatic dimming display (TTL·) is used to mark the relative position of the well A1S mark based on the detection result by the so-called _AIS mark 9 〇 and the substrate load, and the relative position of the well A1S mark (step SA2). Specifically, the substrate stage PST 'controls the woven CQNT secret mask 1278722 1 1246pifl and the substrate stage ps T to make the reticle side AIS mark 90 image and the substrate side AIS by the image pickup element 96 The image of the mark 9 1 is identical, and the reticle side AIS mark 90 of the mask 照明 is illuminated by the illumination optical system 1 L. The illumination light (exposure light) passing through the mask 通过 passes through the substrate side while passing through the projection optical system pl The AI s flag 911 is directed to the imaging element 9 6 'Tingri, and the control device c〇NT adjusts the substrate stage ps based on the distance between the mask Μ and the reference member g 2 obtained by the step SA 1 T &quot; position in the Z-axis direction and image characteristics of the projection optical system pl, and the reticle side AI s mark 9 〇 and the substrate a I S flag 91 by the respective image-imaged (focused) by the imaging device 96. At this time, the light shield support of the loading position of the mask M by the station MS T! F Hin interferometer Μχ Shu, Μχ 2,

My 1 is detected and the position of the substrate stage p s τ is by a laser interferometer.

Pxl, px2, pyi are detected. Further, when the AIS is indexed by the image pickup device 96 using the exposure light, the optimum light amount (illuminance) is obtained on the image pickup unit 96, and the filter 13 in the illumination optical system IL can be driven, for example. . Then, as shown in FIG. 8C, the control device C〇NT moves the substrate stage PST, and adjusts the AJ s of the substrate stage P s τ to the center of the measurement area of the AL (specifically, set at j; The indicator flag of the measurement area is identical, and the position of the substrate stage ps τ at this time is detected by the laser interferometers 13 χ丄, p X 2, p · y 1 (step sa 3 ). From the result of the position detection of the stage using the misalignment interferometer obtained by the steps SA 2 and SA3, the relative position of the photomask can be determined. Silk, based on the obtained basis 37 1278722 1 1246pif1. - _ 母 ♦ ♦ and the camera element set in the first setting 9 6 to perform imaging = ^ standard Q, 9 1 by τ Q n τ 冢 drive projection optical system PL (Ρ position placement 19, magnification Adjusting the device 2 3 and the straight oscillating prisms 24 and 27 of the faculty device, and adjusting the image characteristics of the displacement, scaling, and rotation of the projection light to the pl to the PL g. By the above-described correction system A: L exposure device Ex, ^2, Zhou Zhengxian and the photosensitive substrate ρ method and the method of exposing the mask (four) pattern to the = substrate 。. This embodiment is not set as shown in Fig. 9 on the photosensitive substrate Ρ Nine pattern forming regions (exposure regions) - Α1 to ΡΑ9, one of which is subjected to exposure processing and forming elements for the pattern forming regions pA1 to ρ9. Here, among the plurality of pattern forming regions ΡΑ1 to ΡΑ9, the pattern forming regions PA1 to ΡΑ3 is set in parallel in the γ-axis direction (second direction), and the pattern forming regions ρ A 4 to ΡΑ6 are arranged in parallel in the z-axis direction, and the pattern forming regions PA7 to PA9 are arranged in parallel in the Y-axis direction. Each of the pattern forming regions PA 1 to pa 9 in the X-axis direction The size is set to be larger than the γ-axis direction. Further, among the plurality of alignment marks m1 to m6 arranged in the γ-axis direction, the intervals of the alignment marks m1 to m6 are set in advance so that the alignment marks ml, M2 is disposed in the pattern forming regions PA3, PA6, and ΡΑ9, and the m3 and m4 38 I27872246pifi are disposed in the pattern forming regions PA2, PA5, and PA8, and the alignment marks, m5, and m6 are disposed in the pattern forming regions PA1 and PA4. PA7. The alignment marks m1 to m6 juxtaposed in the Y-axis direction are arranged at a predetermined interval in the X-axis direction, and are at the four corners of each of the pattern forming regions pA 3, p A 6 , and PA 9 The alignment marks melon 1 and m 2 are arranged, and the alignment marks m 3 and m 4 are arranged at the four corners of each of the pattern forming regions PA2, PA5, and PA8, and the four corners of each of the pattern forming regions pa 1 , pa 4 , and PA 9 are disposed. The alignment marks m5 and m6 are arranged. Here, in the following description, the pattern formation areas PA1 to PA3 arranged in the γ-axis direction are referred to as "partition BR1" and the pattern formation areas PA4 to ΡΑΘ are referred to as "partition BR2" as appropriate. The pattern forming regions PA7 to PA9 are referred to as "partition BR3". Photosensitive groups

The board P is set to three partitions bri, Βί 2, and B R 3 divided in the X-axis direction. Further, the arrangement (interval) of the |laser interferometers p y] to Py3 arranged in the X-axis direction is set corresponding to the plurality of sections BR1, BR2, and BR3 arranged in parallel with the χ-axis side # on the photosensitive substrate p. which is,

f shot:, the interval of Pyl ~ Py3 is formed according to the closing area P; the length of D4, PA7 in the x-axis direction is set to be different, # ==;, the length of the moving mirror 3 4 _axis direction: == in the X-axis direction The length is short, the moving mirror 3 - C, D ~ Figure 1 5 A, B, C, the surface of the correction processing program and the following side of the reference to Figure 10A, B, D and Figure 16, Figure 17, the flow chart _ light The processing program will explain. 39 1278722 1 1246pif1 After performing baseline measurement as described with reference to FIGS. 8A, B, and C, as shown in FIG. 1A, the micro-position (3) NT moves the substrate stage pST, and the slave substrate P is disposed on the photosensitive substrate P. The adjustment of the i-th column starting from the side marks each of the melons 1 to m 6 and each phase S of the alignment system AL丄~AL 6. As described above, the present embodiment sets the arrangement (interval) of the alignment systems AL1 to A6 based on the alignment (the interval of 1 to m6) formed on the photosensitive substrate P. Then, the control device _τ The position of the stage p ST in the x-axis direction and the 0 z direction is detected by using radium meter=px1, px2, and a plurality of laser-dried two-eight σ yl~Py3 and pattern forming regions pA丄~PA3 are selected at the same time. ^1) Corresponding to the ... the clock interferometer py 1, and the position of the substrate in the direction of the ¥ axis with the laser interferometer P yi tf to ^ clockfire interferometer P 7 2, P y 3 and the moving mirror 3 4 _ onboard ίΡ3:=〇ΝΤ-face by the interferometer to check the position of ΔT. ST, one side to adjust the system Al work ~ eve shape / Bu X side start the first column alignment mark, m 1 to m 6 opposite (the direction of the axis of the exposure zone ί a pattern of the formation regions 彳 1 to ΡΑ 3 corresponding to each of the alignment marks m 丄 m 6 (step sb 1 ). m 5 speech m , JU Ρ Λ 1 ^ — ~Ί7Τ&gt; The W m domain is arranged with 1 two alignment systems AL5 and AL6, and J is arranged with two alignment marks 3 in the pattern formation area pA. Two alignment marks m5m4 are arranged on the domain PA2, and two alignment m fi are arranged on the pattern formation area PA3, corresponding to the alignment marks, and the pattern formation area pair pattern is opened 40^278722 1 l246pif] =: In the second two, two adjustment systems η △ are arranged, and the area = two is followed by two in the form of inR, fr- 。. The stage PST starts at the X side of the substrate on the X=NT of the control unit C〇NT.帛 2 move 'money set to U red P from - system = mark fml ~ m6 each and adjust ^ ρ,, α 1 L6 mother a relative direction, in the laser to kill the second = test substrate The object ps τ is in the γ-axis direction. ί=:=ρχ1, ρχ2 Detects the position of the substrate stage 2 in the working direction, and simultaneously detects each correction 2 m 6 (step S Β 2). The control device C0NT detects the positions of the pattern forming areas PA1 to PA3 at intervals of _2 positions in the X-axis direction, the correction marks of the j1 column, and the correction marks of the second column. As a result of the detection, correction parameters for the image characteristics such as displacement, scaling, and rotation of each pattern forming region p A 丄 p are corrected (step s B 3 ). Here, after the correction flag of the first column is detected In order to detect the second column alignment mark, the photosensitive substrate P is to be scanned by the modulating unit 11, but at this time, each of the plurality of substrate detecting systems 0a to 600g arranged in the γ-axis direction in the modulating unit u at this time One is measured at a predetermined distance in the X-axis direction, and the surface height position of the photosensitive substrate P. That is, the acoustic position in the surface of the photosensitive substrate P is detected at a plurality of positions in a checkerboard shape, and these substrates Af are just = 1278 The detection result of the % 46pifl NT 0 binary system S is rotated to the surface shape of the pattern forming region ρΑ1 A3 of the control device C〇~pU:: light substrate (step SB4). However, as described above, the two correction system systems AL1 and the := medium measurement system 蛴fi 在 are located outside the plurality of alignment systems A L 1 A T R Φ . ^ AL 6 on 'substrate AF inspection n, first 60 a and 6 〇g adjacent setting plate AF detection system 6〇3 = straw from one side using the base position wII 〇拴 photosensitive substrate P at the Z axis side 3: two sides The adjustment process is performed by the alignment system, and the correction of the positive two-axis two-substrate p from the imaging plane of the projection optical system to the paraphrase state is performed. Moreover, in the correction of the AL 1~a Τ β ία ππ gate ο, the low-rate adjustment for the detection (five) of the high-magnification adjustment of the well "... first system 8 8 and precision adjustment with high magnification Positive light receiving system 8 = Therefore 'For example, when it is not possible to use low magnification to adjust the received light 8, 隹: week, f detection, by switching to detection becomes μ = ; _ positive flag detection, so that the adjustment mark system is adjusted : Two = ALi~Ai β The first system &amp; must be set in all the adjustment system Αί β AL6 is less than the outer 2 adjustments Ματ 1 fen AL 6. Of course even in the system, =L i and line settings It is not impossible. η糸^ L1~AL 6 on the second repair Z=0NT£ by the steps...Improved the image, the surface by the laser interferometer pyi and p 42 1278722 1 1 246pif1 x 1 face into a 2 The position detection of the substrate stage PSτ is performed, and the exposure processing of the pattern forming area PA1 is performed in one row (step SB5). The object 2 P (^ Figure 1 QC does not, the control device C 〇ΝΤ moves the substrate carrier I, the projection optical system PL And the + X side end of the pattern forming area PA 1 is opposite to each other. At the same time, the 'control device c〇NT will also be in FIG. Support the movement of the mSm_x side of the fresh stencil of the reticle ' and make the position of the reticle Μ to the photosensitive substrate P. Then, by aligning the reticle Μ and the photosensitive substrate ρ with the projection light (4) in the +^ direction Moving the '-surface to illuminate the light with the exposure light EL, and exposing the pattern forming area PA 1 to Fig. i (10) shows the state after the scanning exposure of the acid forming region PA 1 is completed. Here, based on the step S B4 The surface shape data of the photosensitive substrate p (pattern forming region pAi) is obtained so that the surface of the projection silk-based image-sensing substrate is uniform, and the substrate carrier is immersed in the direction or the m Y direction. 'The posture of the control panel P, the surface is scanned and exposed. In addition, among the plurality of projection optical systems PL a to p L g , the projection optical system that is not used (for example, the projection optical system from the pattern formation region pA丄) PL a, PL g, etc.) are shielded by the illumination shutter 6 and optical path. / Next, the control device C〇NT corrects the image characteristics based on the correction parameters, and the surface is loaded by the laser interferometers p yl and Ρχΐ, ρ χ 2 Position detection of the P ST, The surface is subjected to exposure processing along with the formation of A 1 (step SB 6). That is, as shown in FIG. 11A, the control device c〇N moves the substrate stage P s T in the −γ direction to make the projection wire System p L and pattern 43 1278722 】 1 246pif1 direction. At this time, the object Μ can basically: ==== anastomosis only to perform micro-motion, P two sides and the photosensitive substrate P to the first secret PL in the -U upward synchronous movement, The surface is exposed to the pattern forming area PA2 by the mask M. Fig. 11B shows the scanning exposure of the pattern forming region PA2 even when scanning exposure to the pattern forming region PA2 = the surface shape of the pattern forming region pA2 obtained by (4) _SB: 4: two notices can be applied to the photosensitive substrate 卩Scanning exposure is performed while controlling the position and leveling control in the 2-axis direction. In the scanning exposure processing of the pattern forming region p A i , the sensing substrate P is scanned in the +X direction, and in the scanning exposure processing of the pattern forming region pA adjacent to the region PA2, the photosensitive substrate p is 'After detecting the correction mark at two positions in the X-axis direction corresponding to each of the pattern patterns of the pattern lines juxtaposed along the Y-axis direction, by a plurality of patterns adjacent in the γ-axis direction = The regions ^1 and ΡΑ2 are synchronously moved in opposite directions to each other to expose the photosensitive substrate. Thereby, the productivity of the entire exposure apparatus can be improved. = Originally, "After the exposure processing for one pattern forming region is finished, the exposure processing for forming the (four) fit" must cause the photomask to be scanned to return to the initial state', but this embodiment is in the case of 1 t ίΐ, After the end of the process, it is not necessary to move the mask (mask stage) significantly when the next pattern forming area is processed, so that the movement time of the mask can be increased, thereby increasing the productivity. Moreover, in 44 1278722 1 1 246pif 1 In the embodiment, the pattern forming area is larger than the scanning direction (the X-axis direction (Y-axis direction) is greatly moved upward, as shown in FIG. 〇D:=吏: the cover is on the scanning substrate: the moving pair is contracted = After the control device C0NT is corrected based on the 3 scoops, the laser interferometer Py i &quot; is used to detect the position of the plate stage P ST, and the Ρχ 2 performs the exposure process of the base A3 (step SB?). , pattern formation area Ρ ie, as shown in FIG. 1 1C, the control is set to the substrate stage PST so that = the formation of the region p A 3 + χ side end: 糸, first PL and pattern = first hood === can basically not move. Then, by nt into the light is smashed The optical system PIj moves in + and the light-sensitive substrate EL light illuminates &amp; white, and the surface is exposed. Figure /; '=== into the area ΡΑ 3 for exposure, after (4) 1 recording = ^^ ^\33=Exposure knot can be based on the shape of the exposure surface shape obtained by the step s β 4, which can be used for sensitization ^, the surface system of the ΡΑ 2 and the leveling control - face painting 2 In the case of the positional control of the axial direction, the pattern forming area ΡΑ3 = - in the case of the paired adjacent pattern, the scanning direction of the upper surface 3 is formed, and the scanning direction at the time of the exposure processing in the reverse direction is set. SR, the substrate stage ps of the Qin and 7 is detected in the direction of the axis 45 1278722 1 l246pifi, that is, the alignment processing and the exposure processing of the plurality of pattern forming regions PA 1 to p A 3 ^ partition BR1) The position of the x-axis direction is measured as shown in Fig. 1 〇A, B, C, D and Fig. 1 1A, B, C, and D, and 1 is performed by the interferometer P x 1 and P x2 in the Y-axis direction. The position detection is performed by the laser interferometer Py i, that is, for position detection in a plurality of juxtaposed laser interferometers p y1 to py 3 in the x-axis direction The laser interferometer is one py1. Then, the position detection is performed by the laser interferometer Py, and based on the position detection value of the laser interferometer pyi, the aligning mark detection is performed and the reticle and the photosensitive substrate are performed. After the alignment process of p, the pattern of the mask Μ is exposed to the pattern formation regions p A 丄 p p A 3 . Further, each of the plurality of juxtaposed pattern forming regions p A 1 to PA 3 in the Y-axis direction is sequentially successively exposed while being in the plurality of laser interferometers Py丨 to Py3 and the pattern forming region p in the continuous exposure. The specific laser interferometer p y1 corresponding to A 1 to PA 3 (partition BRi) forms a configuration that can be used for position detection. Next, as shown in FIG. 12A, the control device C〇NT moves the base, and the stage P ST and the surface of the photosensitive substrate p are arranged on the _χ side of the photosensitive substrate p from the alignment marks i to m 6 of the third column. Each one is aligned with each of the alignment systems A l 1 to AL 6. Then, the control means c τ τ selects two misalignment interferometers p y 2 corresponding to the pattern formation regions ρα 4 to PA6 (partition BR2) among the plurality of misalignment interferometers P y i to p y 3 . The misalignment interferometer for detecting the position of the substrate stage p ST in the γ-axis direction with the movement of the control unit CONT in accordance with the position of the substrate hot stage psi^x axis, switching from the mis-interference interferometer py i to the selected Error 46 Ι 2787226ρίη Interferometer Pyg (step (four) (four) device (3) Ν 利 秘 秘 秘 秘 Ρχΐ Ρχΐ, p position:, at the same time: =, '!; PST in the x-axis direction and ... τ in the γ-axis direction of the base = 台台 ps instrument detection substrate load m3C0NT - face hunting by laser dry L 1~AL Π ST position, - face to make adjustment system A 6 each pair: two sides start the third column of the adjustment The pattern of the mark mi~m is formed by ϊ=zone:;, in the axial direction, a plurality of juxtaposed rods are aligned with each of the two pairs of wm1 to m6 (step SBg). The result of detecting the laser interferometer from Pyl is used for _2; = nuclear test. Specifically, the position 1 of the control device X py 2 is switched to the trimming interference ❹ y 2 8 f. The radiating interferometer P y is interfered by the clock. The substrate of the instrument py 1 is p == The number of times the pin is counted, and the position detection operation of the fixed position ST is also performed. Then, the average of the detection results of the beam 彳 θ is performed by the misalignment interferometer ρ = value ' and the action is measured based on the correction value. Thus, the position detection is performed on the partition Β 3 carrying 2p s ~PA 6) Correction processing - Part 2 = Formation area PA 4 In the detection operation, it is used, 'the field formation area PAl~p$ of the field interferometer P y 2 is adjacent to the partition BR1 of the square f ( The position of the interferometer Py 1 is detected as the result of the positive result of the ° week, that is, the misalignment of 1277822 1 1246pifl V 1 interferometer? y 2 action, measuring the laser interferometer p ps ° τ: γ: ί ί1 memory. The substrate implant is shifted by 1. The measured value and the deviation of the interferometer Py2 are as shown in FIG. 12B, and the control device C〇NT is in the -X direction and the movable substrate stage p sT, and is disposed on the photosensitive substrate. p

Start the adjustment of the fourth column on the side; I:® Sergeant m 1 · Earth X AL! Each of ^1~&quot;16 is aligned with the calibration system, and the mother is in the opposite direction. The laser interferometer Py? is used to check the substrate stage P 3 in the direction of the interference interferometer Pxl, Px2. The inspection of its Wei Wei 7 Sichuan% fine by the radium XA measured the substrate stage P ST in the X-axis side two. At the position of °, the mothers of these correction marks ml~m6 are simultaneously detected (step s B丄〇). m - control device CONT checks the position of the pattern forming area *PA4~p at a distance of a predetermined distance in the direction of the x-axis, and looks at the position of the alignment mark of the first column and the position of the second column of the alignment mark. n The detection results are corrected to correct the image parameters such as shift, scaling, and rotation of each pattern forming region ρΑ4~ (step 1). Here, after the correction correction in the third column,

The substrate is aligned with the plurality of substrate af detecting systems 6 0 a to 6 0 g in the U direction of the alignment unit Uit. The height position of the surface of the photosensitive substrate P is detected at a predetermined distance in the z-axis direction. The respective detection results of the substrate A^6 0 a~β 0 g are output to the control device 48 1278722 1 246pifl N Ll control device CQNT based on the detection result of the substrate detection system 6◦a~6 Ο g, 屯$ Umbrella ^ AR long (four) the main nuclear secret board? The pattern forms the surface shapes of the respective regions PA4 to P8 (step SB12). The number of repairs is obtained by step SB11. 像ν1 Ώ The image is hunted by the misfire interferometer Py2 and opened, the position of the substrate stage P s T is detected, and the exposure of the substrate forming area PA4 is performed. Processing (step SB13). If you do not control the device (3), move the substrate so that the projection optical system and the pattern forming area are opposite to each other. Then, the mask forming area p A 4 is subjected to exposure processing by moving the mask Μ and the photosensitive substrate ^ projection optical system PLhX in the same direction by the exposure light mask M. Second, S is the surface shape data after the scanning exposure of the pattern forming region PA 4 is completed: , and the photosensitive substrate p ^ the wood forming region PA4 obtained by the step SB 12 is used for the projection. The light imaging surface and the surface of the photosensitive substrate — are such that the substrate is loaded with S τ in the z-axis direction or θ X, 6 &gt; Υ direction to control the posture of the photosensitive earth plate, and scanning exposure is performed. Next, after the control device C0NT corrects the image characteristics based on the correction parameters, the exposure processing of the pattern formation region pA5 is performed by detecting the position '-plane of the substrate stage PST by the interferometers P y 2 and P xi, PX 2 (steps). SB 1 4). That is, as shown in Fig. 13A, the control unit c〇NT moves the substrate 纟 纟 P S 郷 郷 郷 郷 郷 和 和 和 和 和 和 和 和 和 和 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 246 。 246 246 246 246 246 At this time, the reticle stage 吻合 aligns the position of the reticle M and the photosensitive substrate p with only a slight movement and movement. Then 'by using - surface light _ and photosensitive substrate? The patterning area P A 5 is subjected to exposure processing by synchronously moving in the direction of the ^ PL PL^_X, and the surface is exposed by the light == ray mask 。. ^^ is not the ugly after the end of the scanning exposure of the pattern forming area Langxin. Next, the control device c 〇 N adjusts the image characteristics based on the correction parameters by performing the exposure processing of the pattern forming region pA6 by the laser interference &lt;APyMpx1, Px2_&amp; onboard σΡST (step SB15). That is, as shown in Fig. 13C, the control device 步进1^&gt; steps the substrate stage PS 步进 in the -γ direction so that the projection optical system p L and the + X side end of the pattern forming region PA 6 face each other. . At this time, the mask stage M S T is only slightly moved in order to match the positions of the mask M and the photosensitive substrate p, and substantially does not move. Then, while the mask Μ and/or the photosensitive substrate Ρ are moved in the + Χ direction in synchronization with the projection optical system p L , the mask μ is illuminated with the exposure light E L to expose the pattern forming region p a 6 . Fig. 1 3D shows a state in which the pattern forming region pa 6 is swept in and out. | ° The position detection of the substrate stage ps in steps SB9 to SB15 in the x-axis direction is performed by the misalignment interferometer Ρ X 1 and ρ χ 2, and the position detection in the x-axis direction is detected by the laser interferometer py 1 get on. That is, the laser interferometer for detecting 50 1278722 1 1 246pif1 1 in a plurality of parallel laser interferometers P y1 to py3 in the X-axis direction is one p y 2 . Then, the position detection is performed by the one of the laser interferometers P y 2 , and the correction mark detection is performed based on the position detection value of the laser interferometer py 2 , and the adjustment of the mask μ and the photosensitive substrate 进行 is performed. The pattern of the cover is exposed to the pattern forming regions ΡΑ4 to ΡΑ6. Further, here, in the γ-axis direction, each of the plurality of juxtaposition=pattern forming regions PA 4 to PA 6 is sequentially successively exposed, and in the continuous exposure, the plurality of laser interferometers py丄 to 图案 pattern forming regions PA4 〜 PA6 (Partition BR2) Correspondence = Specific II-ray interferometer P y 2 forms a laser interferometer that can be used for position detection 0 'Control device CC> NT will use? Replace y 2 with P y 3 (step s B 1 6). The substrate stage, the cont-plane of the control device is moved, and the surface of the photosensitive substrate P is opened from the X side by 1° to A1', and each of the m1 to m6 is adjusted. AL multiple misalignment 2^, direction; / then, control split (3) NT select ~ PAcwl 7 73 with the ® formation area PA7 control device = BR3) corresponding to one laser interferometer Py 3. Set the movement, will use the two-plate stage ps τ in the X-axis direction to measure the position of the shot 2 == PS ... axis direction of the interference ❹" (step SB 2: 2 switch to the selected blade (4) The substrate load 0ST is in the X-axis direction and the pattern forming area of each of the opposite sides of the square ^ 1278722 1 1 246pi f1 6 = the fifth column (m or m:: Each of the parallel adjustments of the coffee I-second two 7 2 9 each of these days to make the recording interferometer

The difference between 2 and P y 3 is used as the y, and will the laser interferometer? The y S singular coordinates can be obtained by recording Xuan Xu. Thereafter, the substrate stage P is shifted by 2 to obtain. The measured value, offset 丄, and offset w of Wapy3 are also detected by the recording interferometer from py2. _^ = 2 on the partition BR3 (pattern formation area Py: movement: plate ΪΞ = Γ, : Γ device _7 starts at the -x square side 6th; positive ρΓ Γ photosensitive group from 1 A L1~ALR f(4) 1~m 6 and the alignment system detects the substrate stage P:; 3 = by clock Shot dry: Instrument::" Interferometer PX i, P x 2 detection substrate == at; 52 1278722 1 1246pifl Z position, and simultaneously detect the mother of these correction marks 6 (step sB 18). The device CONT detects the position of the pattern forming area PA7~"" in the axial direction by the distance _2, the correction flag of the j5 column, and the correction of the 帛6 column. = some detection results 'repair iL Regarding the shifting, scaling, and rotation of each pattern forming region p A 7 to =, the fourth (fourth) correction parameter (step s 9 ) 〇丄 'after the correction of the fifth column, in order to detect the sixth column = Orthogonal, scanning the alignment unit U on the photosensitive substrate P; a plurality of substrate AF detection systems 6〇a~6〇 juxtaposed in the x-axis direction; one 咐 distance in the X-axis direction The south position of the surface of the photosensitive substrate is detected. The respective detection results of the substrate AF detection systems 6 Q a to 6 被 are rotated out to the control 〇Ντ, and the control is based on the substrate &amp; As a result of the detection of g, the pattern forming regions PA7 to pA9 of the plate p are obtained (step SB 2 0). Next, after the control device C〇NT determines the image characteristics of the p 1 tea number by the step SB 18 , The surface of the substrate stage PST is detected by the laser interferometers py 3, X, and P x 2, and the exposure processing of the request forming area PA7 is performed on the surface (step sb2i). 仏/^^^ Seismic (3) mobile substrate: W makes the projection light system PL and ffl form the secret domain PA 7, the side end is opposite. Then, by one side to make the mask M and the photosensitive substrate 53 1278722 1 1246pifl ET a::# : System P [in the + direction synchronous movement - surface exposure light = fresh Μ, case formation area p A 7 exposure processing. After the scanning exposure of the pattern forming area PA 7 is completed, based on the step SB IX The surface shape data of the photosensitive substrate?; pattern forming area PA7), in order to make the projection light, the imaging of the system The surface and the surface of the photosensitive substrate P are _, , =, the axial direction or θ', and the direction is shifted to control the sensation of the nine substrates, and scanning exposure is performed. Then, the control unit sets the (3) ΝΤ 郷 郷 正 正 , ^ ^ ^ ^ ^ ^ ^ ^ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 That is, as shown in Fig. 15A, the control skirt (3) is set in the "γ direction" to the movable substrate stage P S Τ so that the projection optical Wei P L and the -X side end of the pattern A8 are opposed. At this time, the reticle stage M is configured to match the position of the mask Μ and the photosensitive substrate p with only micro-motion, (4). Then, the patterning region ρ8 is exposed by the surface of the ray in the _ χ direction by the surface of the ray and the photosensitive substrate 同步 in the _ χ direction. Shown after the scanning exposure of the pattern forming area ΡΑ8, the control of the county (3) NT 郷 郷 秘 正 二 二 由 由 由 由 由 由 由 由 由 由 由 由 镭 镭 镭 镭 镭 镭 镭 镭 镭 镭 镭 镭 镭X1 and PX 2 detect the position of the base °pst, and the - surface performs exposure processing of the _ formation region pA9 54 1278722 1 1246pifl (step S B 2 3 ). That is, as shown in FIG. 15C, the control device (steps) moves the substrate remaining p S τ in the -γ direction so that the projection light system p L and the time-forming region PA 9 are at the + X side end pair. At this time, the reticle carrier AM ST moves the position of the reticle M and the photosensitive substrate p. Then, by using the - surface to make the coffee and the sensitization ^, the ten vests are illuminating in the +X direction. Moving, one side of the illuminating EL (four) reticle M, the pattern-shaped wire κρΑ ^ division of the scanning area forming the region ΡΑ9 scanning exposure junction of the substrate stage pH of the above steps SB17 to SB23 in the X-axis direction, that is, for multiple Patterning area pA7~p: [^ area BR3) correction processing and X-axis direction measurement in exposure processing] Figure 4 4A, B, C, D and Figure i 5a, b, c, d The mis-interference interference ^ ^ ^ is performed by the positional speculation of the direction by the mis-interference interferometer Py 3 . #, In the interferometer Pyl~Py 3, the t-ray meter used for position detection is one. Then, the positional heartbeat is performed by the one laser interferometer y, and the calibration is adjusted based on the position=value of the misalignment interferometer P y 3 and the mask μ is performed: after the light treatment, the mask is ugly. Exposure to the wire forming area PA 7~ Area 2 Δ : and 'Tingri is also in the direction of the ¥ axis, a plurality of juxtaposed pattern formations ϊ ^ A 9 are successively successively exposed, and at the same time in the 4 lights The specific interferometer P y 3 corresponding to the pattern shape 1278722 1 1246pifi into the area PA7~PA9 (partition BR3) in the laser interferometer py work ~py 3 can be used for position detection. As described above, in the X-axis direction in which the scanning direction of the mask Μ and the photosensitive substrate p, that is, the non-scanning direction in which the υ axis f intersects, the shoulder positive system a L is arranged in parallel, so that it is not necessary to reduce the detection. Correction mark, the number of melon 1 m 6, compared with the original can reduce the adjustment of the standard Wei Gua 1 ~ m 6 , the number of movements. Therefore, the face-to-face maintenance adjustment accuracy is short-tuned. In addition, in the present embodiment, the alignment system is AL·1~AIjβ, and it is also possible to arrange at least three in parallel in the direction of the x-axis, thereby reducing the number of weeks, and reducing the correction mark. The number of detection actions. These multiple parallel alignment systems can simultaneously measure the calibration of each of the multiple _ formation areas, so that the production capacity can be improved. Li Tong's system AL is the deviation from the centerline direction. Therefore, 'there is a comparison with the projection optics and the substrate. Τττ 士二U π 冲先先先凋正锸尤古: Compared with the direction adjustment system , is - degrees (length in the γ axis direction) freely set. The configuration of 6 can be independent of the width of the mask 而, and the detection of the reticle is performed by detecting the axial direction cover at two positions spaced apart from each other on the two maps, and the accuracy can be accurately determined. . In addition, the adjustment mark 56 1278722 ^246pif] can be performed in the direction of the direction of the ★, or at least 2 positions of the distance between the three or more places can be adjusted. By multi-setting, the scanning exposure is adjacent to the Y-axis direction. By using the graphs of the opposite directions in the opposite direction = each of the regions of the region, the exposure of the region of the i-th pattern can be exposed to the surface of the region; = =广所"The ability to reduce the movement of the first leather two = another: 'This embodiment synchronizes with the adjustment of the interferometer ρ y y 2 - P y 3, but the position can be anywhere, also = 疋The two interferometers can be moved like this, even if there is no need to adjust the middle of the ^^ and the end of the exposure. Columns with good precision exposure. The exposure of $ θ can also be used as the offset system. In addition, the averaging is carried out in a 〇. υ . 2 s e c or more However, as described above, it is preferable to form, for example, four corners. By setting 1 = positive mark to one pattern forming region, it is possible to perform displacement, calibration, and performance: f degrees. Further, it is preferable to arrange at least two in the x-axis direction for each of the two correction systems in the Y-axis direction in order to be able to adjust the positive value of the four corners. However, because of the photosensitive substrate? The pattern set in the above 57 1278722 H 246pif1 The size and number of the formation regions are appropriately changed depending on the manufacturing elements. Therefore, by arranging the alignment system, two alignment systems are not arranged in one pattern formation region. However, by optimizing the interval of the alignment system with the width (length in the Y-axis direction) of the photosensitive substrate P as a parameter, even if the size and number of the pattern formation regions are changed, one pattern formation region can be arranged 2 A calibration system. For example, when the adjustment system AL is a total of 6 AL 1 to AL 6 , the configuration of the alignment systems AL 1 to AL 6 is set to satisfy the interval of the alignment system AL 1 and AL 2 (2 / 7 ) XL • · · ( 1 ) • Correction system AL 3 and AL 4 interval (1/5) XL ···(2) • Correction system AL 5 and AL 6 interval (2/7) XL ··· ( 3 ) • The condition of the interval L···( 4 ) between the system AL 1 and the AL 6 can be adjusted, and even if the size and number of the pattern forming regions are changed, two alignment systems can be arranged for one pattern forming region. In this case, the description will be made with reference to Figs. 18A1, m, ci, D1 and Figs. 18A2, B2, C2, and D2 - planes. In Fig. 18A1, the photosensitive substrate having a width in the γ-axis direction is divided into two in the x-axis direction TM, and a total of four are set. Each of the four pattern forming regions is formed in exposure processing. The light δ A2 is used to form N〇 ·:[,, pattern. Figure 1 8 1278722 1 1246pifl A1, the white 圏 "rv' Shi / U table is not used in the correction system, in this example for the pattern forming area 1 &quot; A2 using the alignment system AL 1, AL 3, the pattern formation The area PA1 uses the alignment systems AL4 and AL6. Here, the alignment marks corresponding to the alignment systems AL 1 to AL 6 are formed on the photosensitive substrate; P. The alignment systems AL丄 to AL 6 are satisfied to satisfy the above (1) to (4). Since the pattern is arranged for the purpose, at least one pattern forming area is disposed in two. The example of FIG. 18 A1 is three correction systems. Here, the width of each pattern forming region in the Y-axis direction is the same. 1 8B1 shows that the photosensitive substrate p having a width L is divided into two φ/knife in the direction of the ¥ axis, and is divided into two in the X-axis direction, and a total of six pattern forming regions are set, and the stomach is in the six pattern forming regions. Here, a picture (pattern) is formed on each of them. Here, the mask μ shown in Fig. 18B2 is used for exposure processing. The mask M1 is formed with a pattern of "Ν 〇 1". In the example shown in Fig. 1 8.1, ' The patterning area PA 3 is used for the pattern forming area PA 2 using the alignment system a L·1, AL 2 The alignment systems AL3 and AL4 are used, and the alignment systems a L 5 and AL 6 are used for the pattern formation region p A 1 . In this case, the alignment systems A L1 to AL· 6 also satisfy the above (1) to ( Since the formula 4) is arranged for the purpose, two alignment systems are arranged for one pattern formation region. Here, the width of each pattern formation region in the γ-axis direction is the same. - Figure 1 shows a photosensitive substrate having a width of l. p is divided into two along the γ-axis direction, divided into two in the X-axis direction, and a total of six pattern forming regions are set. Here, the mask M shown in Fig. 1CC2 is used for exposure processing. A "Ν 〇 · 1" pattern and a "N 〇 · 2" pattern 59 1278722 1 1246pifl are formed thereon. Then, each of the pattern forming regions PA 1 〜 p A 6 will have a "N 0 · 1" pattern and "N" Each of the 0 · 2" patterns is appropriately transferred, and five in the Y-axis direction, and two in the X-axis direction, forming a total of one 昼 plane (pattern). In the example shown in Fig. 18 C1, The pattern forming region p A 3, the "N〇·Γ' pattern and the "N 〇· 2" pattern are simultaneously formed, and at this time, the alignment systems AL 1 and AL 2 are used. Then, a pattern of "Ν ο 1" is formed on the pattern forming region P A 2 , at which time the alignment systems A] L 3, AL4 are used. Further, when the "Νο·1" pattern is formed on the pattern forming region pa2, the illumination of the exposure light of the "No. 2" pattern is obscured by the blind (illumination region setting means) provided in the illumination optical system IL or the like. In the pattern forming area PA3, only the "No. 1" pattern of the mask Μ is formed. Here, the interval between the alignment systems AL 3 and AL 4 is set as described in the above formula (2). Therefore, the two alignment systems a l 3 and A L 4 can be arranged in the map forming region PA2. Then, the pattern forming area PA1, N〇·1" pattern and the "N 〇 · 2" pattern are simultaneously formed, at this time, the alignment systems AL 5, AL 6 are used. In this case, the alignment system AL 1 ~ AL 6 is also arranged for the purpose of satisfying the above formulas (丄) to (4). Therefore, two alignment systems are arranged for one pattern formation region. Eight figures 1 8D1 show that the photosensitive substrate p of the width seven is along the γ axis. The direction is divided into three, and is divided into two along the X-axis direction to set a total of six pattern forming regions. Here, the mask 所示 shown in Fig. 1D is used for the exposure processing mask to form "ν 0 · 1, pattern, "Ν 〇 · 2,, pattern, Ν 0 · 3" pattern. Then, each of the pattern forming regions P A 1 to ? 8 will be "1^〇.1,, pattern, '%〇.2,, pattern, 60 1278722 &quot;246pif1

Each of the No. 3" patterns is appropriately transferred in the γ-axis direction, and is formed in two in the X-axis direction to form a total of 14 sides (patterns). In the example shown in Fig. 18D1, the pattern is The formation area pa 3, "Ν ◦ · pattern and "Ν 〇 · 3" pattern are simultaneously formed, at this time, the alignment systems AL1, AL2 are used. Further, when the 〇, 2", and "Ν 0 · 3" patterns are formed on the pattern forming region ΡΑ 3, the illumination of the exposure light of the Ν〇 1 pattern is blocked by the curtain or the like, and the pattern forming region ρ Α 3 is formed. Only the "Ν 〇 · 2" and "Ν 0 · 3" patterns of the mask are formed. Then, the pattern forming region p A 2, " Ν ο · 1, pattern, " ν 〇

The 2" pattern and the "N〇·3" pattern are simultaneously formed, at this time, the alignment systems AL3, AL4 are used. Then, for the pattern formation area PA1, the "N ^ · 1" ffi oblique "N 〇 · 2" pattern is At the same time, the positive system A L5 and AL6 are used at this time. In addition, when the pattern of "Νο,,·Γ, and "No. 2" is formed on the pattern forming area pA, "No. 3" is used by the blind or the like. The illumination of the exposure light of the pattern is blocked. In this case, since the alignment systems AL 1 to AL 6 are also arranged for the purpose of satisfying the above formulas (i) to (4), two ancient contour systems are arranged for one pattern formation region. In the above embodiment, the alignment marks m 1 to 1116 are configured for each (four) partition in the axial direction, but may be attached to the pattern forming region 1 1 as shown in FIG. The alignment mark, m3 1, m4 1 and the alignment mark accompanying the pattern forming area PA 3 such as 3 3, m4 3 are set in the ¥ axis = up to the middle. Similarly, the alignment of the pattern forming region p A 2 may be marked with ml 2, m 2 2 and the alignment marks m1 4, m 2 4 accompanying the pattern forming region pa 61 1278722 1 1 246pifl 4 on the Y axis. Arranged side by side in the direction, or the alignment marks m 3 3, m 4 3 accompanying the pattern forming area PA 3 and the alignment marks 11135 attached to the pattern forming area 13 and 5, juxtaposed in the Y-axis direction Arranging, or aligning the alignment marks attached to the pattern forming region p A 4 , ml 4 , m 2 4 , and the markers associated with the pattern forming region p A 6 in the direction of the Y-axis, juxtaposed in the Y-axis direction . Then, these positive marks on the Y-axis direction can be marked, and the age systems AL1 to AL4 are respectively measured. That is, the correction system AL 1 simultaneously detects the calibration marks m22 and m24 in its measurement area, the correction system AL (4) detects the correction marks such as 3! and m33, and the correction system = the measurement area simultaneously detects the correction mark 'm 4 1 and m4 3. Thereby, it is possible to reduce the seam of the positive inspection and the production capacity, and to increase the width of the pattern forming region. When the processing is performed from the side ̄ίίϊ, the control device C〇NT first in AL 1"τ, each of the correction flags of the soil column is adjusted by the system by the correction system ^^ = J column 2 Each of the │ _ _ ^ ^ 1 AL4 is calibrated. Then, control the mounting of the %# ΡΘΡ Δ + Χ direction scanning photosensitive substrate Ρ while performing the lining of the 幵 成 成 区域 PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA PA -x direction sweeping. Similarly, after the alignment of the exposure portion of the case forming region PA 2 is performed, the scanning of the photosensitive substrate in the + Χ direction in the third and fourth columns is performed to perform 62 Ϊ 278722 &quot; 246 pif1 on the pattern forming region PA 3 The exposure processing is followed by the process of scanning the filament board P-face into the (four)-forming region p A 4 in one direction. Further, the control device C0NT detects the exposure processing of the fifth column and the sixth column as the positive target, and the - surface scans the recording plate p_ into the pattern forming region PA 5 in the +X direction, and then one side is in the -X direction. The exposure of the photosensitive substrate p-plane to the region PA6 is additionally performed. The interval between the alignment marks 1丄 to 6 of the photosensitive substrate P is based on the arrangement (interval) of the alignment systems A L1 to AL 6 . Alternatively, the adjustment system can be set to be movable in the x-axis direction, and the interval between the alignment systems can be changed. And as will be explained above, will be on the photosensitive substrate? The pattern forming areas PA1 to PA9 of the upper exposure are divided into a plurality of sub-sections Ri to br3, and the correction processing and the exposure area are performed in each sub-area, and the partitions are br 3 3, one of which is sequentially performed, so that even the photosensitive substrate type The hunting is performed by dividing the photosensitive substrate into a plurality of partitions and setting the respective (4) interferometers P y 1 to py 3, and it is also possible to perform accurate adjustment processing and exposure in each partition without the need for a 1 repentance step meter. deal with. In the case of 3 ί „, the adjustment system is 6 A L1 to AL 6 , and at least 3 are arranged side by side in the direction of the Japanese axis, so that the number of detections and the number of detections can be reduced without reducing the adjustment. Moreover, the side-by-side alignment system can simultaneously measure the correction marks of a plurality of pattern forming areas or the mother, thereby improving the production capacity. 63 1278722 】1246pi f1 As described above, the 'missing interferometer p and In the x-axis direction, the figure is slaughtered ~yw interval (configuration) setting, the figure is fortunately into the area wiper" into the area (partition) each corresponding to the 1~p" configuration of the two adjacent to each other, the laser interferometer Py [to f, and two according to the long-term production of the pattern forming region in the x-axis direction) is set. On the other hand, when the squad, and the = region are separated from each other, 'multiple: shot; y? In the above embodiment, the mobile gift 5 can also be used in the substrate stage ps ^ 4 b as a moving mirror 'but a plurality of partitions BR1~:- Each side of the X-axis direction is arranged in a moving mirror. A plurality of (3) projection optical systems in the above-described embodiments, the so-called "positions" are adjacent to each other more than the projection optical system: i: mirror scanning type exposure device 'but the same. The exposure apparatus can also be applied to the exposure apparatus EX as the exposure apparatus EX, and the on-chip exposure liquid crystal display element pattern %, ' is not limited to the angle type glass used for, for example, a semiconductor exposure apparatus. It is also suitable for exposure apparatus. * Nine clothes and the exposure spread p 6nm) and Μ (4〇5ηΧ light source of this embodiment for manufacturing a thin film magnetic head, not only the g line (43 M_KrFw〇, :, (3) 6 5nm), exciplex laser (1 9 3 n field (2 4 8 nm), a ρ projection optical system PL is not 2 1 7 7 nm). J278722 &quot;246pifj small system and expansion system. As a projection optical system PL, when you use yang, ultraviolet light, use quartz, and:,,,,,,,,,,,,,,, The material of the outer line of I acts as a broken optical system. The shot guard is a catadioptric system or The type of the refraction system that is on the substrate stage and the magnetic force floating type of the wire force or reactance force and the type of the use of the Laurent edge can also be used as the field plane electricity. Any one of the armor and the armature unit of the sacred stone and the armature unit, clothing: magnetic and electric; from the single == side of the stage of the shift = side = wide = unit open early special open Η 6 “7=Second Edition is also released to the floor (earth): It is also applicable to the exposure device of the structure of the genus. The reaction force generated by the MST of the fresh stage is used. — 3 3 〇 2 2 4, Ϊί Applicable to an exposure apparatus that mechanically releases the structure to the floor (earth) with a frame. As described above, the exposure apparatus according to the embodiment of the present application is manufactured for the purpose of maintaining the mechanical precision, electrical precision, and optical precision of various subsystems including the constituent elements recited in the patent claims. Made. In order to ensure these various precisions, adjustments about 65 1278722 1 1246pif1 degrees before and after the ton, adjustments regarding the accuracy of various mechanism systems, regarding various electrical adjustments. From the various subsystems to the group of exposure cracks ί mutual mechanical connection, the assembly of the electrical circuit with the iL sub-Hir subsystem. ί: After the assembly work of the 仵 置 set, the comprehensive adjustment t ’ disc is used as the overall material accuracy of the exposure device. In addition, it is most desirable to manage the clean room, such as the system. + : The piece is shown in Figure 2〇, after the component == is made to be the mask based on the design step (the substrate of the original mask of the mask::: nT is the substrate (the wafer, the glass is exposed on the substrate) 'The base of the exposed substrate is 3 2Q4, 7G parts step (including butterfly engineering, welding engineering, packaging engineering) 205, inspection step 2◦6, etc. As described above, In the directional scanning reticle and the substrate, at least three alignment systems are arranged side by side in the non-scanning direction, so that the number of tuned linings to be detected is not reduced, and the number of movements of the aligning standard is reduced. The surface maintains the adjustment accuracy—the surface shortens the correction processing time and the production capacity of the exposure processing of the screen. Moreover, the exposure area exposed on the substrate is divided into a plurality of sections, and the correction processing and the exposure processing are performed in each section, and This processing is performed sequentially for each of a plurality of partitions, so even if the substrate is enlarged, it is possible to divide the base into a plurality of partitions and set the position corresponding to each partition to be detected. Partition switch position check The device can perform precision correction processing and exposure processing in each of the regions. - Although the present invention has been disclosed in the preferred embodiments as above, it is not intended to limit the invention, and anyone skilled in the art is not It is possible to make some changes and refinements within the scope of the present invention. Therefore, the scope of the patent application scope of the present invention is subject to the definition of the patent application. Fig. 2 is a schematic configuration view of Fig. 1. Fig. 2 is a schematic view showing a filter. Fig. 3 is a schematic view showing a filter unit including a correction unit. 5, 5A, 5C are diagrams for explaining the alignment system and the a F detection system. Fig. 6 is a schematic configuration diagram of the alignment system. Fig. 7 is a schematic configuration diagram of the aF detection system. 8B, 8C are diagrams for explaining a base line measurement program. Fig. 9 is a diagram for explaining an exposure method of the present invention. Fig. 10 A, 10B, IOC, 10D are for explaining the present invention. Illustration of the exposure method. Figure 1 1 A, 11B, lie, 11D is for explanation BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 2A, 12B, 12C, and 12D are diagrams for explaining the exposure method 67 1278722 1 1246pif 1 of the present invention. Fig. 1 3 A, 13B, 13C, and 13D are for explaining the present invention. 1A, 14B, 14C, and 14D are diagrams for explaining the exposure method of the present invention. Fig. 1 5 A, 15B, 15C, and 15D are for explaining the exposure method of the present invention. Fig. 16 is a flow chart for explaining the exposure method of the present invention. Fig. 17 is a flow chart for explaining the exposure method of the present invention. Fig. 1 8 A Bu 18B Bu 18C Bu 18D Bu 18A2, 18B2, 18C2, 18D2 are not examples of the configuration of the tuning system. Fig. 19 shows another embodiment of the exposure method of the present invention. 20 is a flow chart showing an example of a manufacturing process of a semiconductor element. Fig. 21 is a perspective view showing the original exposure apparatus. 2A, 22B, 22C, and 22D are diagrams for explaining the original exposure method. Fig. 2 3 A, 23B, 23C, and 23D are illustrations for explaining the original exposure method. 2A, 24B, 24C, and 24D are illustrations for explaining the original exposure method. [Description of main component symbols] 2 0: Field of view pupil, 32 a, 32b: moving mirror (position detection device), 34 a, 34b: moving mirror (position detection device), 68 1278722 11246pif 1 5 0 a~5 0 g : projection area, 60 (60a 6〇g): substrate side a ρ detection system, 70 (7Ga~70d): reticle side af detection system, 90, 9 1: standard drum for measurement, 9 2: Reference member, AL (AL1 to AL6): Alignment system, BR1 to BR3: Partition, c ONT: Control device, . EL: Exposure light, EX: Exposure device, μ: Photomask, . H: Bracket, IL: illumination optical system, m 1~m 6 ··correction mark, MST: reticle stage, _

Mxl, Mx2, Myl: laser interferometer (position detecting device), P: photosensitive substrate (substrate), PA 1 to P A9: pattern forming region (exposure region), PL (PLa to PLg): projection optical system, . P ST: substrate stage, P X1, PX 2 : laser interferometer (position detecting device), P y1 to P y 3 : laser interferometer (position detecting device), U: correction unit. Interest 69

Claims (1)

The first praises you "the scope of the patent does not have a slash correction. The date of this amendment: July 25, 1995. The scope of the patent application: 1 · An exposure method, suitable for moving the reticle and the substrate synchronously in the direction of the work. Exposing the pattern of the reticle to the substrate, comprising: ^ detecting a plurality of aligning marks disposed on the substrate by a plurality of alignment systems, and the U-Shenzhen system is respectively separated from the above The plurality of alignment marks are opposite to each other, and three or more are arranged in parallel in the second direction intersecting the i-th direction; and the position of the photomask and the substrate are matched based on the detection result. The exposure method according to the above aspect of the invention, characterized in that the position of the substrate is the exposure region to be exposed, and the detection is performed at two or more positions apart from the predetermined distance in the first direction. The exposure method according to the first or second aspect of the patent application, wherein the exposure area of the substrate is exposed in a plurality of directions in the second direction, and the position of the substrate is coincident by simultaneously Detection and more The exposure method corresponding to the exposure area. The exposure method according to the invention of claim 2, wherein the exposure area for exposing the substrate is arranged side by side in the second direction. After detecting the plurality of alignment marks at two positions in the first direction corresponding to the exposure region, the substrate is exposed by synchronous movement in the opposite directions of the adjacent plurality of exposure regions. According to the exposure method of the third aspect, the exposure region in which the exposure of the substrate is performed is plural in the second direction, and the detection is performed in two places in the first direction corresponding to the exposure region. 7 0 is connected to the opposite direction of the plurality of _ domains, and the exposure device is adapted to expose the mask and the substrate at the first movement to expose the fresh pattern to the substrate, and is characterized by: The alignment marks of the plurality of positions on the substrate are arranged side by side in the second direction The exposure apparatus according to claim 6, wherein the outer two intervals of the alignment system are substantially equal to the length of the substrate in the second direction. The exposure apparatus described in the sixth or seventh aspect of the patent application is two intervals of the outer side of the plurality of correction systems, and is longer than the length of the second cover in the second direction. fPlease apply the exposure equipment described in item 6 or item 7 of the patent scope J/, !? is on the two outer sides of the plurality of correction systems, respectively The AF detection system that detects the position in the direction orthogonal to the exposure surface of the substrate is provided.曝光 曰 〇 如 如 如 如 如 如 如 如 如 如 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光 曝光The position of the AF detection system. The exposure apparatus according to claim 6 or 7, wherein the multi-lobed light region of the substrate 71 is exposed in the second direction and the plurality of The adjustment system is configured to dispose two or more of the plurality of exposure regions of the deer. The exposure apparatus according to claim 8, wherein the plurality of positive systems are disposed in the second direction of the exposure region where exposure of the substrate is performed, and the plurality of The alignment system is configured to correspond to two or more exposure areas. The exposure apparatus according to claim 9, wherein the plurality of alignment systems are arranged in parallel in the second direction of the exposure region where the exposure of the substrate is performed, and the plurality of adjustments The positive system is configured to correspond to two or more exposure areas. The exposure apparatus of claim 1, wherein the multi-sided positive system is a second side of the exposure area in which exposure of the substrate is performed, and the plurality of The adjustment system is configured to correspond to two or more exposure areas. The exposure device of claim 6 or claim γ, characterized in that, unlike the plurality of alignment systems, the projection of the mask white 2 pattern on the substrate is provided. One projection optical system, and one or more of the plurality of alignment systems are disposed between the plurality of projection lights and the system. The exposure apparatus according to claim 6, wherein the adjacent intervals of the plurality of alignment systems are 2/7 or less of the length of the second side of the substrate. 1 7 · an exposure method, suitable for synchronously moving the reticle and the substrate in the second direction and exposing the pattern of the reticle to the substrate, comprising: 72 1278722 1 1 246pif2 dividing the substrate into multiple exposures a partition of the region; and after the mask is aligned with the substrate at each of the plurality of exposed regions, the pattern of the mask is exposed to the substrate. 1 8 . The exposure method according to claim 17 of the patent application, wherein the positional fit is a part of the result of the coincidence of the position of the adjacent partition. The exposure method according to claim 17, wherein a plurality of position detecting means for detecting a position of the substrate are provided in the first direction, and a partition of the area where the light is transferred is set. The configuration of the plurality of position detecting devices. The exposure method according to claim 29, wherein the plurality of position detecting devices are composed of a plurality of laser interferometers, and the position of the base (four) is switched to use the light of the light. Check the position of the substrate. 2 1 - an exposure apparatus, which is suitable for exposing a pattern of the mask to the substrate while moving the mask and the substrate synchronously in the first direction, and comprising: eight or more position detecting devices arranged side by side in the first Measure the substrate in the first! π in the second direction of the direction is adjusted to the reticle of the substrate; and the ϊ 柃 置 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : The exposure area selection check: one of the 丨 position is set, and according to the % 劂 position of the position detecting device, the calibrating is performed by the aligning portion. 73 127観f2 exposure device, wherein the feature described in claim 22 includes: a moving mirror disposed on a substrate stage movably supporting the substrate, and a table A laser interferometer that irradiates the moving mirror with laser light to detect a position of the substrate in the second direction, wherein the control device is a laser interferometer. According to the movement of the substrate stage, the exposure apparatus according to the second aspect of the invention is characterized in that the substrate is divided into a plurality of regions of the exposure region in the second direction. And the control device selects one of the plurality of position detecting devices for the partition of the exposed area, and switches the plurality of position detecting devices for each of the exposed areas. The exposure apparatus according to claim 21, wherein the interval between the plurality of position detecting means is set in accordance with an interval of the first direction of the partition of the exposure area. The exposure rupture described in claim 21, wherein the substrate is divided into a plurality of regions of the plurality of exposure regions in the first direction, and the control device selects the A partition of the exposure region corresponding to one of the plurality of position detecting devices is adjusted by the alignment portion. Port 2 δ · - A component manufacturing method, which comprises: using, for example, claim 1, or item 2, or item 7, item 18, item 1 or item 2 or item 2 The exposure method described in the section, the project of exposing the pattern of the component depicted on the reticle to the substrate; and the project of developing the exposed substrate.