TW561523B - Exposure device, exposure method, and manufacturing method of devices - Google Patents

Abstract

This invention provides an exposure device. The device freely adjusts the sizes of patterns formed on the photo-substrate and the dividing locations of patterns on the mask when carrying out continuous exposure on divided patterns. A scan typed exposure device contains a view shutter, a light shield and a blind 30. The view shutter sets up the width of the scanning direction of the projected area 50 on the photo-substrate P. The light shield sets up the width of said projected area 50 on the non-scanning direction. The blind 30 moves along the non-scanning direction to define the contiguous area of the pattern shadow in order to have the cumulative exposure light in the contiguous area faded away from one side toward the edge of the lighting area.

Description

561523 V. Description of the invention (1) * TECHNICAL FIELD The present invention relates to a scanning exposure device and an exposure method for synchronously moving a mask and a photosensitive substrate, and exposing a pattern of the mask on the photosensitive substrate, and more particularly, to a photosensitive substrate An exposure device and an exposure method for repeating exposure on a part of the adjacent patterns, and a method for manufacturing the element. Conventional technology Liquid crystal display elements or semiconductor elements are manufactured by a method called so-called lithography #etching (P h ο t ο 1 i t h 〇 g r a p h y an n d e t c h) in which a pattern formed on a mask is transferred onto a photosensitive substrate. The exposure device used in this micro-image #etching process includes a substrate stage on which a photosensitive substrate can be moved in a two-dimensional manner, and a mask stage on which a patterned mask can be moved in a two-dimensional manner. While sequentially moving the mask stage and the substrate stage, the pattern formed on the mask is transferred to the photosensitive substrate through the projection optical system. The so-called exposure device is known to have two main types, a comprehensive exposure device that simultaneously transfers all the patterns on the mask to the photosensitive substrate, and simultaneously scans the mask stage and the substrate stage and continuously covers the mask. Scanning exposure device that transfers the pattern on a photosensitive substrate. Among them, when manufacturing a liquid crystal display device, since a display area is required to be enlarged, a scanning exposure device is mainly used. In a scanning exposure device, a plurality of projection optical systems are arranged so that adjacent projection areas are formed by a predetermined amount of displacement in the scanning direction, and adjacent ends of the relative projection areas overlap in a direction orthogonal to the scanning direction. A so-called multi-lens scanning exposure device (mult-lens scan exposure device). The multi-mirror scanning exposure device not only maintains good imaging characteristics, but also provides a large exposure area without the need for a larger device. on

10170pif.ptd Page 5 561523 V. Description of the invention (2) The field aperture of each projection optical system of the tracing exposure device is, for example, trapezoidal, and the total amount of aperture width of the field aperture in the scanning direction is set to be always equal Because the joints of adjacent projection optical systems are repeatedly exposed, the scanning exposure device described above has the advantage of smoothing the optical aberrations or exposure illuminance of the projection optical system. The scanning type exposure device moves the masks and the photosensitive substrates in a direction orthogonal to the scanning direction after the masks and the photosensitive substrates are moved for scanning exposure, and performs multiple scanning exposures to make part of the pattern. By repeatedly exposing and combining these patterns, a liquid crystal display device with a large display area can be manufactured. The method of repeating the scanning exposure and progressively moving the pattern on the photosensitive substrate | is the same as the method of forming a plurality of divided patterns on the mask first, and then joining the divided stomach cut patterns on the photosensitive substrate; or the pattern of the mask An image is divided into a plurality of projection areas, and a method of joining the divided projection areas on a photosensitive substrate, and the like. In the previous method, as shown in FIG. 25, three divided patterns Pa, Pb, and Pc are first formed on the mask M, and then these divided patterns Pa,

A method in which Pb and Pc are sequentially exposed on a photosensitive substrate P and bonded to the photosensitive substrate P. On the other hand, the latter method is to change the exposure area of the pattern formed by the mask M during each scan as shown in FIG. 26, and sequentially scan the photosensitive substrate P on the projection area corresponding to the irradiation area. Exposure, and then pattern synthesizer. Here, five projection optical systems are provided, such as the second 6 (a) ^

As shown in the figure, the respective projection areas 1 0 0 a to 1 0 0 e are set as trapezoids, and the cumulative exposure amount formed in the scanning direction (X direction) remains the same, and each end portion is at Y

1Q170P1f.ptd Page 6 561523 V. Description of the invention (3) The design of overlapping directions and the total width of the projection area in the X direction is equal. When the photosensitive substrate is exposed to the pattern, among the plurality of projection areas 1 0 a to 1 0 0 e, the light path corresponding to the predetermined projection area is shielded by a shutter, so that only a predetermined area of the mask M is exposed and irradiated. At this time, after multiple scanning exposures, the adjacent ends of the projection area are repeatedly exposed. Specifically, as shown in FIG. 26 (b), the first scanning exposure is on the -Y side end a 1 of the projection area 1 0 0 d, and the second scanning exposure is on the projection area 1 0 0 The + Y-side end portion a 2 of b is repeatedly exposed. Similarly, the second scan exposure is repeated on the -Y side end portion a 3 of the projection area 1 0 0 c, and the third scan exposure is repeated on the + Y side end portion A a 4 of the projection area 1 0 0 b . At this time, during the first scanning exposure, the projection area 100 e is blocked; during the second scanning exposure, the projection areas 100 a, 100d, and 100d are blocked; The projection area 1 0 0 a was blocked during three scanning exposures. Here, the length L 1 2 of the division pattern formed on the photosensitive substrate P in the first scanning exposure in the Y direction is the + Y direction end of the short side of the projection area 1 0 0 a to the projection area 1 0 0 The distance in the Y direction between the -Y direction endpoints of the long side of d. The length L1 3 of the division pattern formed on the photosensitive substrate P in the second scanning exposure in the Y direction is the long side of the projection area 100b + the end point in the Y direction and the long side of the projection area 1 0 0 c- The distance in the Y direction between the ends of the Y direction. The length of the segmentation pattern formed on the photosensitive substrate P in the third scanning exposure in the Y direction is L1 4, which is the long side of the projection area 100b + the end point in the Y direction, and the short side of the projection area 1 0 0 e- The distance in the Y direction between the ends of the Y direction. In this way, the size of each segmented pattern (the length in the Y direction L 1 2, L 1 3, L 1 4) is determined based on the long and short sides of the trapezoidal projection area.

10170pif.ptd Page 7 561523 5. Description of the invention (4). Problems to be Solved The conventional scanning exposure method and scanning exposure apparatus described above have the following problems. In the method shown in FIG. 25, in order to form a plurality of independent divided patterns on the mask M, the pattern configuration on the mask M is limited. In addition, in order to scan the exposure in each divided pattern, the number of scanning exposures is increased, and the throughput is reduced. In the method shown in FIG. 26, when the patterns are synthesized by a plurality of scanning exposures, the sizes of the divided patterns (the lengths in the Υ direction L 1 2, L 1 3, and L 1 4) are based on the above. The length of the long and short sides of the trapezoidal projection area depends on the length. That is, in the method shown in Fig. 26, the size of the pattern formed on the photosensitive substrate P is limited by the size of the projection area and the size (shape) of the aperture of the field of view. Furthermore, the joining of the divided patterns is formed only at the ends of the trapezoidal projection area, so the division positions of the patterns are also limited by it. As described above, in the conventional method, the division position of the pattern or the size of the pattern formed on the photosensitive substrate P is limited, and it is difficult to make an arbitrary element. In view of the above circumstances, the present invention aims to provide an exposure device, an exposure method, and an element manufacturing method that can repeatedly set a part of a divided pattern on a photosensitive substrate while exposing it, and simultaneously set the size of the pattern formed on the photosensitive substrate. In addition, the division position of the pattern on the cover can be set arbitrarily, and the component can be manufactured with good efficiency. Means for Solving the Problems In order to solve the above-mentioned problems, the present invention adopts the configuration as shown in Figs. 1 to 24 of the embodiment, and its structure will be described below.

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V. Description of the invention (5) The exposure device of the present invention (EJ〇 has the following features: an illumination optical system (IL) that irradiates a light beam (EL) to the mask (M), and a mask on which the mask is placed Stage (MST), and substrate stage (PST) on which a photosensitive substrate (ρ) is exposed for the pattern (44, 4 5a, 45b, 46, 47) of the mask (M). Simultaneously move the pattern image of the mask (M) and the photosensitive substrate (p) and apply the curtain (M) (50a ~ 50g, 62, Recognition Nita exposure nine pickups divided into multiple scanning exposures on the photosensitive substrate (p) followed; A light exposure device for weight t is provided with a field aperture (20) to set the scanning direction (χ ', = Above the photo, ^ ^ ^ νΛ) visibility (Lx); and the first shading plate (40) can set the width of the pattern image (5h ~ 50g) in the direction (Y) orthogonal to the scanning direction ( Ly) 'and the second light-shielding plate (30) can be scanned at the same time around the periphery of the irradiation area, and the cumulative exposure in the repeated exposure area (48, 49, 66) will be substantially continuous The attenuation of the drawing direction is orthogonal The direction (Y) is moved and the repeating area of the pattern is set (48. According to the present invention, the scanning direction of the pattern image on the photosensitive substrate and the visibility in a direction orthogonal to the scanning direction can be set using the field of view aperture and the first to light shielding plate When the set pattern image is bonded on the photosensitive substrate, a second light-shielding plate is arranged on the optical path, and can be moved in a direction orthogonal to the scanning direction. The movement of the second light-shielding plate can arbitrarily set the beam irradiation area on the mask ( Illumination area of the illumination optical system). Therefore, the joint portion of the pattern, that is, the division position of the mask / pattern can be arbitrarily set, so the size of the pattern formed by the photosensitive substrate can be arbitrarily set. Also, the second mask configuration It can move in a direction orthogonal to the scanning direction, and has a light reduction characteristic that can reduce the continuous exposure of the cumulative exposure in the pattern repeating area around the periphery of the opposite irradiation area.

l〇170pir.pld Page 9 561523 V. Description of the invention (6) Set the desired exposure value for the repeating area to make the repeating area be consistent with the exposure outside the repeating area. Therefore, it is possible to perform exposure processing with high accuracy. In addition, moving the second light-shielding plate to the aperture of the field of view can arbitrarily set the size or shape of the illumination area of the photosensitive substrate (the projection area in the case of an exposure device equipped with a projection optical system). Uniformity of exposure. According to the exposure method of the present invention, while the mask (M) is irradiating the light beam (EL), the light beam (EL) is scanned and exposed by moving the mask (M) and the photosensitive substrate (P) synchronously, and divided into a plurality of scan exposures. A continuous exposure method in which a part of a pattern image (50a to 50g, 62, 63) of a mask (M) is repeatedly exposed, and pattern synthesis is performed on a photosensitive substrate (P). It is characterized in that the width (Lx) of the scanning direction (X) of the illuminated pattern image (50 0 to 50 g) set on the photosensitive substrate (P) is set by the field diaphragm (20); The different first light-shielding plate (40) is set, and the width (L y) of the orthogonal direction (Y) of the scanning direction of the pattern image (50a to 50g) is matched with the area for continued exposure (4 8, 4, 9, 6, 4 ) Set a second light-shielding plate (3 0), which can continuously attenuate the irradiation light amount of the repeating area (4, 8, 9, 6, 4) to the periphery of the irradiation area, and can (50a ~ 50g, 62, 63) moves in the (Y) direction. According to the present invention, the width of the scanning direction of the pattern image on the photosensitive substrate and the width of the pattern perpendicular to the scanning direction can be set by the field diaphragm and the first light shielding plate. Then, when the pattern image is bonded on the photosensitive substrate, and the second light shielding plate is set in conjunction with the area where the exposure is continued, the irradiation area (irradiation area of the illumination optical system) of the beam can be arbitrarily set, so the pattern can be arbitrarily set The connecting part, that is, the divided part of the pattern of the mask. therefore,

10170pi f.ptd Page 10 561523 5. Description of the invention (7) The size of the pattern formed on the photosensitive substrate can be arbitrarily set to form a large pattern. In addition, the second light-shielding plate has a light reduction characteristic capable of continuously irradiating the light amount of the repeating area of the attenuation pattern, so that the exposure amount of the repeating area can be set to a desired value. Therefore, it is possible to make the exposure amounts of the repeating area and the respective exposure areas other than the repeating area consistent, and it is possible to perform exposure processing with high accuracy. The element manufacturing method of the present invention is characterized by using a scanning exposure type exposure device (EX) that irradiates the mask (M) with a light beam (EL) and simultaneously moves the mask (M) and the glass substrate (P) with the light beam (EL). ), And a part of the pattern of the mask (M) is joined and synthesized to manufacture a continuous liquid crystal element with a larger pattern area (46, 4 7) of the mask (M). The information of the pattern arrangement of the mask (M) on the glass substrate (P) and the information of the pattern joining position of the pattern are set as a recipe in the exposure device, and the mask (M) to be exposed is set in accordance with the format. ), And the pattern (48) of the mask (M) provided at the joining position on one side of the emitting area is overlapped with the position of the light-shielding plate (30) joining and exposing. Expose it. After exposure, move the glass substrate (P) to the direction orthogonal to the scanning direction (Υ), and set the mask (M) to be exposed in the exposed area of the glass substrate (P) and a part to be repeated. The pattern of the exposure light is combined to irradiate the exposed irradiation area, and the pattern (49) of the mask (M) provided at the joining position on one side of the irradiation area is overlapped with the position of the exposure mask (30) and exposed. According to the present invention, when joining exposures between patterns, the information of the joining position (dividing position) of the mask pattern is set as a format in the exposure device in advance, and the format is matched with the format to perform the first scan of the joining exposure. At the time of exposure, re-expose the light-shielding plate at the joining position. Exposure on first scan

10170pif.ptd Page 11 561523 V. Description of the invention (8) After the glass substrate is gradually moved in a direction orthogonal to the scanning direction, during the second scanning exposure, the light shielding plate is superposed at the joint position and then exposed. Therefore, Only by adjusting the position of the light shielding plate respectively during the first scanning exposure and the second scanning exposure, the pattern of the mask can be divided and then bonded on the glass substrate. As described above, as long as the position of the light shielding plate is adjusted, the bonding position can be set, so that the bonding accuracy can be improved, and an element having desired performance can be manufactured. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is exemplified below, and in conjunction with the accompanying drawings, the detailed description is as follows: Marking description of the drawings · 20 field of view aperture 30 shielding Device (second light-shielding plate) 40 light-shielding plate (first light-shielding plate) 4 6, 4 7 division pattern 4 8, 4 9 repeating area 5 0 a to 5 0 g projection area (illumination area) 5 2 a to 5 2 f Repeating area (continued) 6 0 A, 6 0 B Mask position registration mark 6 2, 6 3 division pattern 6 4 Repeat area 7 2 Substrate position registration mark C 〇 NT control device EL exposure (beam) EX exposure device

10170pif.ptd Page 12 561523 V. Description of the invention (9) IL illumination optical system IM a ~ IM g Lighting module M cover MST cover stage LX pattern image width in the scanning direction L y The pattern image is orthogonal to the scanning direction Width in the direction P photosensitive substrate, glass substrate PL (Pla ~ PLg) projection optical system PST substrate stage X scanning direction Y non-scanning direction (direction orthogonal to the scanning direction) Detailed description of the preferred embodiments The invention will be described below with reference to the drawings Exposure device and exposure method, and manufacturing method of device. The first is a schematic perspective view of an embodiment of the exposure apparatus of the present invention, and the second is a schematic configuration diagram of the exposure apparatus. In FIGS. 1 and 2, the exposure device EX includes a mask stage MS T on which the mask M is placed; and an illumination optical system IL that can emit an exposure (beam) EL to illuminate the mask M on the mask stage MST; and The substrate stage PST mounts a photosensitive substrate P so as to expose a pattern formed on the mask M; and a projection optical system PL exposes the pattern image of the illuminated mask M exposed by the illumination optical system IL, and exposes the projection image on the substrate stage PS T. The illumination optical system IL has a plurality of (seven in this embodiment) illumination modules IM (IMa to IMg). The projection optical system PL also has a plurality of (in this example, seven) projection optical systems PLa to PLg corresponding to the number of illumination components IM. The projection optical systems PLa to PLg are individually arranged corresponding to the lighting components IMa to IMg. Photosensitive

10170P1f.ptd Page 13 561523 5. Description of the invention (ίο) The plate P is made by coating a glass plate (glass substrate) with a photosensitizer. The exposure device EX is a scanning type exposure device that scans and exposes the mask M and the photosensitive substrate P in synchronization with the exposure movement. In the following description, the optical axis direction of the projection optical system PL is set to the Z direction 'and the Z direction. The synchronous movement direction (scanning direction) of the mask M and the photosensitive substrate P is the X direction, which is orthogonal to the Z direction and the X direction. The direction (non-scanning direction) is the Υ direction. Then, as will be described in detail later, the exposure device E X is provided; the field aperture 20 is provided in the projection optical system PL, and is used to set the scanning direction (X direction) of the pattern image of the mask M illuminated on the photosensitive substrate. The width of the first light-shielding plate 40 is set in the projection optical system PL at about the same position as the field-of-view aperture 20 to set the non-scanning direction (扫描 direction) of the pattern image of the mask M illuminated by the photosensitive substrate. ), And the second light-shielding plate (b 1 ind) 3 0 is provided in the illumination optical system IL, and can be moved in the non-scanning direction (Y direction). As shown in FIG. 2, the illumination optical system IL includes: a light source 1 composed of an ultra-high pressure mercury lamp; and an elliptical mirror 1 a for collecting light beams emitted by the light source 1; and a dichroic mirror 2 Among the light beams collected by the elliptical mirror la, the light beams of the necessary wavelength are reflected, and the light beams of other wavelengths are directly transmitted; and the wavelength selection filter 3, in the light beam reflected by the dichroic mirror 2, only the more necessary wavelengths of exposure Usually at least one of the g, h, and i lines) pass through; and the light guide device 4 divides the light beam passed through the wavelength selection filter 3 into a plurality of branches (7 in this embodiment) and passes through a mirror 5 Inject into each lighting module IM a ~ IM g. There are a plurality of lighting modules I M (seven I M a to I M g in this implementation) (but the second figure is for convenience only, only the corresponding parts of the lighting module I M g are shown),

10170pif.ptd Page 14 561523 V. Description of the invention (11) The lighting optical systems IMa ~ I Mg are arranged at a certain interval in the X direction and the Y direction. The exposure ELs emitted by the plurality of illumination units IMa to IMg individually are different small areas (irradiation areas of the illumination optical system) on the individual illumination masks M. The lighting components I M a to I M g are each provided with an illumination shutter 6 and a relay lens (r e 1 a y 1 e n s) 7, a fly-eye lens 8 as an optical integrator, and a condenser 9. When the lighting shutter 6 blocks the light path, the light beam of the light path is blocked; when the light path is opened, the light shielding of the light beam is released. The illumination shutter 6 is connected to a shutter driving unit 6a to drive the illumination shutter 6 to move forward and backward in the optical path of the light beam. The shutter driving section 6 a is controlled by a control device C 0 N T. Each of the lighting modules I M a to I M g is provided with a light amount adjustment mechanism 10. The light amount adjusting mechanism 10 is a device for adjusting the exposure amount of each light path for setting the illuminance of the light beam of each light path, and is equipped with a semi-transparent mirror 1 1 and a detector 1 2, and a filter 1 3, and a filter. Driving section 1 4. The translucent mirror 11 is arranged in the optical path between the filter 13 and the relay lens 7 and transmits a part of the light beam that has passed through the filter 13 to the detector 12. Each detector 12 often independently detects the illuminance of the incident light beam and outputs the detected illuminance signal to the control device CONT ° As shown in FIG. 3, the filter 13 is coated with chromium (Cr) or the like on the glass plate 13A. The curtain-shaped pattern is formed by gradually changing the line shape in a certain range along the Y direction. This filter 13 is arranged between the illumination shutter 6 and the translucent mirror 11 in each optical path. Each of the plurality of optical paths is provided with a semi-transparent mirror 1 1, a detector 12, and a filter 13. Filter driver 1 4 according to the instructions of the control unit C Ο N T

10170pif.ptd Page 15 561523 V. Description of the invention (12) Move the filter 13 in the Y direction. In this way, by moving the filter 13 with the filter driving section 14, the individual light amount for each optical path can be adjusted. The light beam transmitted through the optical path adjustment mechanism 10 passes through the relay lens 7 and reaches the flying eye lens 8. The fly-eye lens 8 forms a secondary light source on the exit surface, and can pass through the condenser lens 9 to illuminate the irradiation area of the mask M with uniform illumination. Then, after the exposure EL of the condenser lens 9 passes through the illumination unit including the right-angled lens 16 and the reflection-reflection-type optical system 15 of the lens system and the concave lens, the predetermined illumination area of the mask M is illuminated. The mask M illuminates each irradiation area differently according to each exposure EL transmitted through the illumination modules I Ma to I Mg. Here, a second light-shielding plate 3 0 (B 1 ind shutter) is arranged between the condenser lens 9 and the reflection-refractive optical system 15, and the second light-shielding plate 30 can be driven by the light-shielding plate driving portion 3 1 Scanning direction (Y direction) moves. The mask B will be described later. The mask stage MST supporting the mask M has a long stroke in the X direction for one-time scanning exposure, and a stroke at a predetermined distance to the Y direction orthogonal to the scanning direction. As shown in FIG. 2, the mask stage MST includes a mask stage driving unit MSTD that can move the mask stage MST in the XY direction. The curtain stage driving section MSTD is controlled by the control device C Ν Τ. As shown in Fig. 1, moving mirrors 32a and 32b in the vertical direction are provided at respective edges of the X direction and the Y direction on the screen stage MST. The moving mirror 3 2a is provided with an opposing laser interferometer 33a, and the moving mirror 3 2b is arranged opposite to the laser interferometer 3 3b. The laser interferometers 3 3 a and 3 3 b each emit moving lasers 3 2 a and 3 2 b opposite to the moving mirrors 3 2 a and 3 2 b. Can detect the X and Y positions of the MST with high accuracy, that is,

ΙΟΠΟριί .ptd Page 16 561523 V. Description of the invention (13) Position of the curtain. The detection results of the laser interferometers 3 3 a and 3 3 b are output to the control device CONT. The control device CONT monitors the position of the mask stage MST by the output of the laser interferometers 33a and 33b, controls the mask stage driving section MSTD, and moves the mask stage MST to the desired position. The exposure EL passing through the mask M is incident on the projection optical systems PL (PLa to PLg), respectively. This projection optical system PLa to PLg is a device for imaging a pattern existing in the irradiation range of the mask M on a photosensitive substrate P, and projecting an exposure pattern image on a specific area of the photosensitive substrate P, corresponding to each lighting component IM a to IM g Configuration. As shown in FIG. 1, among the plurality of projection optical systems Pla to PLg, the projection optical systems Pla, PLc, and PLg and the projection optical systems PLb and PLd; PLf are arranged in two rows and multiple birds. The projection optical systems PLa ~ PLg, which are arranged in multiple birds, are arranged next to the projection optical system (such as PLa and PLb, PLb and PLc) in a quantitative displacement in the X direction. Each of these projection optical systems PLa to PLg passes a plurality of exposures transmitted through the mask M by the illumination modules I M a to I M g, and the pattern image of the mask M is projected on the photosensitive substrate P placed on the substrate table PST. That is, through the exposure EL of each of the projection optical systems Pla to PLg, a pattern image corresponding to the irradiation area of the mask M is formed on a different projection area (illumination area) on the photosensitive substrate P according to predetermined imaging characteristics. As shown in FIG. 2, each of the projection optical systems PLa to PLg is provided with an image moving mechanism 19, two sets of reflection-refractive optical systems 2 1 and 2 2, a field of view aperture 2 0, and a magnification adjustment mechanism 2 3. The image moving mechanism 19 is such that, by using two parallel flat glass plates to rotate around the γ axis or the X axis, respectively, the pattern image of the mask M is moved in the X direction or the Υ direction. The exposure EL through the mask M passes

10170pi f.ptd Page 17 561523 V. Description of the invention (14) After passing through the image moving mechanism 19, it enters the first group of reflective inflection type optical system 21 ° The reflective inflection type optical system 2 1 is for forming the cover M The device for the intermediate image of the pattern includes a right angle lens 24, a lens system 25, and a concave lens 26. The right angle 稜鏡 24 can freely rotate around the Z axis, and can rotate the pattern image of the mask M. At the position of the intermediate image, a field-of-view aperture 20 is provided. The field-of-view aperture 20 is a device that sets a projection area on the photosensitive substrate P, particularly a width in a scanning direction (X direction) of a pattern image set on the photosensitive substrate P. The light beam passing through the field of view aperture 20 is incident on the reflection-refractive optical system 22 of the second group. The reflection-refractive-type optical system 2 2 is provided with a right-angle 7 2 7, a lens system 2 8, and a concave lens 29, similarly to the reflection-refractive-type optical system 2 1. The right angle 稜鏡 2 7 can also freely rotate around the Z axis, and can rotate the pattern image of the mask M. The exposure E L emitted from the reflective concave-fold optical system 22 is passed through the magnification adjustment mechanism 23 to form an equal-magnitude positive image of the pattern image of the mask M on the photosensitive substrate P. The magnification adjustment mechanism 23 is composed of three lenses, a plano-convex lens, a lenticular lens, and a plano-convex lens. By moving the lenticular lens between the two plano-convex lenses in the Z direction, the magnification of the pattern image of the mask M can be changed.

The substrate stage PST supporting the photosensitive substrate P has a substrate holder PZ, and the photosensitive substrate P is placed via the substrate holder PZ. The substrate stage PST, like the cover stage MST, has a long stroke in the X direction for performing one-dimensional scanning, a long stroke for stepwise movement in the Y direction orthogonal to the scanning direction, and the substrate stage PST. A substrate stage driving section PSTD that moves in the XY direction. The substrate stage driving section P S T D is controlled by a control device C 0 N T. Yes, the substrate table P S T can also move to Z

10170pif.ptd Page 18 561523 5. Description of the invention (15) Move in the direction. In addition, the substrate table PST is provided with a detection device (not shown) that detects the position in the Z direction between the pattern surface of the mask M and the exposure surface of the photosensitive substrate, and can control the pattern surface of the mask μ and the exposure surface of the photosensitive substrate P. At a predetermined interval. This detection device is constituted by a multi-point focus position detection system which is one of the focus detection systems of the oblique incidence method. The detection value, that is, the position information in the Z direction of the photosensitive substrate P, is output to the control device CO NT. As shown in Fig. 1, moving mirrors 34a and 34b are provided in the orthogonal directions of the respective edges of the X direction and the γ direction on the substrate stage PST. A laser interferometer 3 5 a is arranged to face the moving mirror 34 a. A laser interferometer 3 5 b is arranged facing the moving mirror 3 4 b. The laser interferometers 35a and 35b respectively emit laser light toward the moving mirrors 3 4a and 3 4b opposite to them, and measure that they and the moving mirrors 3 4a and 3 4b emit laser light, and measure that they and the moving mirrors 34a and 34b the distance between. Thus, the positions of the substrate stage P S T in the X direction and the γ direction, that is, the positions of the photosensitive substrate P can be detected with high resolution. The detection result of the laser interferometer is output to the control device CONT. The control device CONT monitors the position of the substrate table PST by using the outputs of the laser interferometers 35a, 3 5 b and the aforementioned detection device (multipoint focus position detection system), controls the substrate table driving section P s TD, and moves the substrate table PST to Desired location. The cover stage driving unit MSTD and the substrate stage drive PSTD are controlled independently by the control device CONT. The cover stage MST and the substrate stage pSt are originally driven separately by the cover stage driving unit MSTD and the substrate stage driving unit PSTD, and can be independently independent. mobile. Therefore, the control device C 0 N T can monitor the positions of the cover curtain table μ S T and the base plate table 0 S T while controlling the two driving parts p s T D and M S T D to make the cover

10170pii.ptd Page 19 561523

V. Description of the invention (16) The curtain "i ΐ 2 f r" moves synchronously in the X direction to the projection optical system and machine at the desired scanning speed (synchronous moving speed). I degree is also Δ'P in the mask M supported by the screen stage MST, the photosensitive substrate 4 supported by the stomach substrate stage PST, and the projection optical system PL is arranged in a positional relationship of total consumption. The figure illustrates the field of view aperture 20, the light-shielding plate (first light-shielding plate), 40, and the shutter (second light-shielding plate) 30. Fig. 4 and Fig. 5 are model diagrams showing the positional relationship between each of the field of view aperture 20, the light shielding plate 40, and the mask 30, and the projection optical system PL, the mask M, and the photosensitive substrate p. In FIG. 4, the projection optical system pLg is used to represent the display. The field of view aperture 20 is disposed in the projection optical system P L (P L g), and there is an opening formed by a gap. The field aperture 20 is a device that sets the shape of the projection area (illumination area) 50 (50 g) on the photosensitive substrate P, and particularly sets the width Lx of the scanning direction (X direction) of the projection area 50 of the pattern image. . The field diaphragm 20 is disposed in the projection optical system PL, and has a positional relationship with the mask M and the photosensitive substrate P approximately in common. Α ^ The light-shielding plate (first light-shielding plate) 40 is also a device that sets the shape of the projection area on the photosensitive substrate P, especially to set the width of the non-scanning direction (Υ direction) of the projection area ^ or 5 of the pattern image. Ly. The light-shielding plate 40 is also set at projection =, the system PLg is configured to overlap the field diaphragm, and the opening K formed by the field diaphragm 20 and the cover plate 40 is used to set the projection area on the photosensitive substrate P & 0 g / small and shape . In this embodiment, the field diaphragm 20, the light-shielding plate 40, and the projection area 50 g have a planar trapezoidal shape. Here, the light-shielding plate 40, which is arranged superimposed on the field aperture 2 0, is also within the projection optical system p L ’.

10170pi f.ptd Page 20 561523 5. Description of the invention (17) The positional relationship between M and the photosensitive substrate P is roughly the same. It is also possible to move the photosensitive substrate P relative to the light shielding plate 40. Therefore, the light shielding plate 40 may be fixed or movable. In order to maintain a greater degree of freedom, the movement is shown in Figs. 4 and 5. Yes. The light-shielding plate 40 is provided with a light-shielding plate driving mechanism (not shown), and the light-shielding plate 40 can be moved in a non-scanning direction (Υ direction) by the light-shielding plate driving mechanism. Therefore, by moving the light shielding plate 40 in the Υ direction, the width L y in the Υ direction of the projection area 50 g can be arbitrarily set. In this way, the combined size of the projection area 50 0 a to 50 g can be arbitrarily set. Here, the light shielding plates 40 provided in the projection optical system P L g can be independently moved, and the positions of the light shielding plates 40 in the Y direction can be individually set. Therefore, the size and shape of the projection area 50 can be set. In addition, two large light shielding plates may be provided as the light shielding plates 40 for the projection areas 50 a to 50 g. For example, the shape shown by reference numeral 3 0F in FIG. 20 may be used. The position of the light shielding plate 40 may be provided near the photosensitive substrate P, the mask M, or the shutter 30. The shutter (second light-shielding plate) 30 is arranged in the illumination optical system IL (illumination unit IM) as shown in FIG. 2 and the like, and is driven by the shutter driving section 31 to move in the non-scanning direction (3 direction). . The driving of the shutter driving unit 31 is controlled by the control device CONT, and the shutter 30 moves under the control of the control device CONT. In this embodiment, as shown in FIG. 1, the masker 30 includes a masker A provided near the light path corresponding to the lighting component I Ma and the projection optical system P 1 a, and a masker B provided in the illumination. The close position of the optical path between the component IM g and the projection optical system PL g. Therefore, as shown in FIG. 5, the mask 30 is moved in the Y direction to cover a part of the opening K formed by the diaphragm 2 0 and the light shielding plate 40.

l () 170pif.ptd Page 21 561523 5. Description of the invention (18) (For the sake of understanding, only the opening K is shown in the figure 5, the field aperture 2 and the light shielding plate 4 are not shown), and the projection area can be set arbitrarily 50 size and shape. The width in the X direction of the front end portion of the mask 30 (the portion corresponding to the opening K) gradually decreases in the Y direction to form an oblique oblique mask. By obliquely obstructing the exposure EL, the shape of the projection area 50 can be set. In this embodiment, the projection area (illumination area) 50 formed by the field of view aperture 20, the light shielding plate 40, and the shader 30 is set to a trapezoidal shape (a flat quadrangular shape). The shader 30 is disposed in the illumination optical system IL, and has a position substantially conjugated to the mask M and the photosensitive substrate P. That is, in the present embodiment, the field diaphragm 20, the light shielding plate 40, and the shield 30 are disposed at a position that is roughly conjugated to the mask M and the photosensitive substrate P, and the mask M and the photosensitive substrate P pass through the projection optical system. Placement of PL into conjugate relationship. Here, the field-of-view aperture 20, the light-shielding plate 40, and the shader 30 may be arranged at the relevant positions of the vehicle M and the photosensitive substrate P in common. Therefore, for example, as shown in FIG. 6, it is also possible to arrange the light shielding plate (first light shielding plate) 40 close to the shutter B. Alternatively, the mask 30 may be arranged near the field of view aperture 20 in the projection optical system. Alternatively, these components 20, 30, and 40 may be arranged in close proximity to the mask M or the 2 light-sensing substrate P. That is, the field of view aperture 20, the light-shielding plate 40, and the shader 30 are respectively disposed as long as they are conjugate to the mask M and the photosensitive substrate P (refer to the reference numerals A and B in FIG. 2), and are disposed on the exposure EL. Any position on the light path is fine. In addition, the shutter 30 is disposed at a position that defocuses the conjugate surface, and the amount of light is still constant. Therefore, it may be arranged at a position where the focusing direction is slightly deviated. In addition, although the light shielding plate 40 can be used to set the projection area 50 by moving in the Y direction

10170pi t'.pld Page 22 561523 V. Description of the invention (19) The width Ly in the Y direction is designed to rotate around the z axis, and the light shielding plate 40 is rotated around the z axis, as shown in FIG. 7, which can be changed The shape of the projection area 50. Similarly, rotating the mask 30 along the Z axis can also change the shape of the fan projection area 50. Fig. 8 is a plan view of projection areas 50a to 50g of the projection optical systems Pla to PLg on the photosensitive substrate P. Each of the projection areas 50a to 50g is set to a predetermined shape in accordance with the field diaphragm 20 and the light shielding plate 40 (a trapezoidal shape in this example). The projection areas 50a, 50c, 50e, and 50g and the projection areas 50b, 50d, and 50f are arranged opposite to each other in the X direction. Further, between the end portions (boundary portions) of the adjacent projection areas of the projection areas 50 a to 5 Og (5 1 a and 5 1 b, 5 1 c and 5 1 d, 5 1 e and 5 1 f, 5 1 g and 51h, 51 i and 51 j, 51k and 51 1) are overlapped and arranged side by side in the Y direction as shown by two-point lock lines to form a repeating region (joint portion) 5 2 a to 5 2 f. Since the boundary portions of the projection areas 50 a to 50 g are arranged side by side in the Y direction, the total width of the projection areas in the X direction is set to be approximately equal, so that the exposure amounts during scanning exposure in the X direction can be equal. As described above, by setting the projection areas 5 0 a to 50 g of each of the projection optical systems P 1 a to PL g, the respective repeated areas (joint portions) 5 2 a to 5 2 f can be eased at the joint portion 5 2 Changes in aberrations or illumination changes from a to 5 2 f. Here, the position or width of the joint portions 52a to 52f in the γ direction can be arbitrarily set by the movable shading plate 40. As shown by the dashed line in FIG. 8, one of the two maskers 30 is moved in the direction of the soil Y in the two sets of maskers 30 to set the irradiation area on the mask M, and the projection area 5 on the + side is set. The size and shape of 0 a; the other blocker 3 0 B, also moves in the direction of γ to set the irradiation area on the mask M ′ to set

10l70pif.ptd Page 23 561523 5. Description of the invention (20)-The size and shape of the projection area 50 g on the Y side. Moreover, one of the maskers 3 0 A can still shield the light path corresponding to the projection area 50 a, and set the size and shape of the projection area 50 c at the same time; the other masker 3 0 B corresponds to the shadow projection area 50 g At the same time as the light path, the size and shape of the projection area 50 e can also be set. In this way, each of the maskers 3 A and 3 B can move in the Y direction to cover the plurality of projection areas, and the optical path corresponding to a specific projection area can arbitrarily set the size and shape of the predetermined projection area. In addition, for the movement of the masker 30, it is possible to set respective sizes of the boundary portions 5 1 a, 5 1 d, 5 1 e, 5 1 h, 5 1 i, and 5 1 1 of the projection area. Therefore, the masker 30 can set the size and shape of the boundary portion of the projection area by moving in the non-scanning direction (Y direction) to set a repeating area 5 2 a to 5 2 f of the projection area (pattern image). In addition, the width in the X direction of the front end portion of the mask 30 (the portion corresponding to the opening K) gradually decreases toward the Y direction to form an inclined shape, which can block a part of the corresponding optical path of the boundary portion of the projection area. The attenuation of the cumulative exposure in the repeated area can be continuously reduced toward the periphery of the projection area. In FIG. 8, the inclination angles of the planes of the boundary portions 5 1 a, 5 1 e, and 5 1 i of the projection area are set to be the same as the inclination angles of the front end portions of the masker 30 A. Similarly, the boundaries of the projection area The inclination angles of the planes of the portions 5 1 d, 5 1 h, and 5 1 1 are set to be the same as the inclination angles of the front end portions of the shutters 30 B. The masker 3 0 A is arranged at the front end portion of the optical path corresponding to the boundary portion 5 1 a or 5 1 e, and the repeating area 5 2 a or 5 2 c is set, so that during scanning exposure, the repeating area 5 2 a The cumulative exposure of (5 2 c) decreases approximately continuously towards the -Y side. The masker 3 0 B sets the front end part of the light path corresponding to the boundary part 5 1 1 or 5 1 h, and sets the repeating area 5 2 f or 5 2 d so that the scanning exposure will be in the repeating area.

10170pif.ptd Page 24 561523 V. Description of the invention (21) The cumulative exposure of 5 2 f (5 2 d) decreases substantially continuously towards the + Y side. As described above, the projection area is divided into a plurality of projection areas by the field of view aperture 20 and the light-shielding plate 40 anti-masking device 30. The size and shape can be arbitrarily set. In this way, by setting the position of the occluder 30, during the scanning exposure, the cumulative exposure is gradually attenuated toward the periphery of the irradiated area of the mask M, and the cumulative exposure is continuously changed in the direction of the repeated areas 52a to 52f. . Returning to FIG. 2, a photodetector 4 1 is provided on the substrate stage P S T. The photodetector 41 is a device that detects information related to the amount of light exposed on the photosensitive substrate P, and the detected signal is output to the control device CO NT. In addition, the information related to the light amount of the exposure includes the amount of exposure irradiated per unit area on the object surface, or the amount of exposure light radiated per unit time. In this embodiment, the information about the amount of light to be exposed is described in terms of illuminance. This photodetector 41 is an illuminance sensor that measures the exposure exposure amount at the corresponding position of each of the projection optical systems P 1 a to PL g on the photosensitive substrate P. As shown in FIG. 24 (a), a CCD sensor Make up. The photodetector 41 is supported by a guide axis (not shown) in the Y direction on the placement substrate table PST, and is set at the same level as the photosensitive substrate P. It is driven by the detector drive unit and can be positioned in the scanning direction (X direction). ) Move in the orthogonal direction (Y direction). The photodetector 4 1 is driven by the X-direction movement of the substrate stage PST and the Y-direction drive of the detector driving section before one or more exposures, corresponding to the projection optical system P 1 a ~ PL g The lower part of each projection area is scanned. Therefore, information about the exposure light amount of the projection areas 50 a to 50 g on the photosensitive substrate P and the respective border portions 50a to 501 of each of these 50a to 50g can be obtained.

10170pif.ptd Page 25 561523 V. Description of the invention (22) The detection by the photodetector 4 1 2D. Information related to the amount of exposure light detected by the photodetector 41 is output to the control device CONT. At this time, the control unit CONT can detect the position of the photodetector 41 according to the respective driving amounts of the substrate driving unit PS T D and the detector driving unit. As shown in FIG. 9, a pixel pattern 44 and peripheral circuit patterns 45 a and 4 5 b located at both ends in the Υ direction of the day pattern 44 are formed in the pattern region of the mask M. In the daytime pattern 44, a plurality of electrodes corresponding to a plurality of pixels form a pattern arranged neatly and regularly. In the peripheral circuit patterns 4 5 a and 4 5 b, a driving circuit for driving the electrodes of the element pattern 44 is formed. Each projection area 50 a to 50 g is set according to the predetermined size. At this time, as shown in FIG. 8, the length of the long side is L1 and the length of the short side is L2. The interval adjacent to the projection area (projection area Y Directional distance) is L 3. The peripheral circuit patterns 45a and 45b of the mask M shown in FIG. 9 are the same size and the same shape as the peripheral circuit patterns 61a and 61b of the photosensitive substrate P shown in FIG. Exposure of the projection optical systems 50a, 50g on the outer side. The daytime pattern 44 of the mask M and the daytime pattern 60 of the photosensitive substrate P have the same length in the X direction, but different lengths in the Y direction. Next, the exposure device EX having the above-mentioned configuration is used to scan and expose the exposure EL in synchronization with the movement of the mask M and the photosensitive substrate P, and repeatedly exposes a part of the pattern image of the mask M, and divides it into multiple scan exposures. A method of connecting an exposure pattern to a photosensitive substrate P. In the following description, the movement of the mask stage M S T and the substrate stage P S T are all controlled by the control device CONT, and are operated through the mask stage driving part MSTD and the substrate stage driving part P S T D.

l () 17 () pif.ptd Page 26 561523 V. Description of the invention (23) In the following description, the pattern of 10% is divided into two regions °, 2: It will be formed on the mask M as Ia includes a peripheral part of the ZAI / 5'knife sigma pattern 46, the length-dividing pattern 47, and the γ direction of the case; and the -part of the pattern 44. This, the wide picture 3: the side 1-way pattern 45b and the pixels are exposed, and divided into two parts of each of the scanning warm ^^^ 7. Then, the entire display on the photosensitive substrate P, due to the two scanning exposures, the eight treasures of the ^ # are as shown in the figure of the brother 10 and the total 洚 is 丨 A. The knife-cut pattern formed by the nine people ( (Exposure area) 62, and two parts of the peripheral circuit pattern 6la and 蚩 Xintuzai 60, and the segmentation pattern (exposure F⑴ ^, V ancient /, Dan Su circle bu mouth, use, joy, 々) The length of the γ direction is LB, including the part of 1 e, J denier pattern 60. The entire exposure pattern is synthesized from the groups of cut patterns 6 2, 6 3. Here, the length LA is the intersection of the short side of the projection area 50a + the end point in the γ direction and the short side of the field 50e and the shader 3 0β arranged on the optical path corresponding to 50o. The distance in the Y direction. The length LB is the Y-direction between the short side of the projection area 50c and the shader 30A located at the light path corresponding to the projection area 50c, and the -Y direction end point of the short side of the projection area 50g. Distance. Further, it is assumed that the division pattern 62 and the division pattern 63 overlap the overlapping region (joint portion) 64 on the photosensitive substrate p, and that the length LK in the γ direction of the overlapping region 64 and the projection region 5 0 a to 50 g are repeated. The regions 5 2 a to 5 2 f are at the same distance. Then, the length LK ′ of the distance in the Y direction of the repeating region 64 is set by the position in the Y direction of the masker 3 0 B and the projection area 50 oe, and the length in the projection area 50 oe The distance in the Y direction of the continuous portion 48 in which the cumulative exposure amount is continuously attenuated inward + Y side is the same. Similarly, the length LK is determined by

H) 17 () pi f .ptd Page 27 561523 V. Description of the invention (24) Position and direction of projection area 5 0 c to set 'and cumulative attenuation of continuous exposure to -Y side within projection area 5 0 c The distances in the Y direction of the joints 4 to 9 are the same. That is, the shapes (inclination angles) of the respective tip portions of the shutters 3 0 A and 3 0 B are set so that the distances in the Y direction between the connection portions 48 and 49 are consistent. When detecting the positions of the front ends of the shutters 4 8 and 4 9, the sensors shown in Figures 2 4 (b) and (c) can be used to move the sensors to detect that the amount of light is half (about 5 0%), you can also align this position. On the mask M, the positions of the splicing sections 48, 49 are formed according to the mask 30, that is, the areas to be spliced for exposure are set in advance, and the positions corresponding to the splicing sections 4 8, 49 are set. The pattern of the mask M (continuous exposure area) is set to match the position of the mask 30 to the position registration mark 6 0 (60 A, 60B) °, and the exposure sequence will be described with reference to FIG. 11. In this embodiment, the contiguous portions 4 8 and 4 9 of the divided pattern 4 6 and 4 7 of the mask M are successively synthesized on a photosensitive substrate (glass substrate) P to produce a continuous pattern area 45 a and 4 that are larger than the mask M. 4, 4 5 b larger liquid crystal elements. First, the control device CO NT sets in advance information on the pattern placement position of the mask M of the photosensitive substrate P and information on the pattern joining position on the mask M. That is, the positions of the divided patterns 4 6 and 4 7 of the mask M on the photosensitive substrate P are respectively set in advance, and at the same time, the positions of the connecting portions 48 and 49 on the mask M are also set first. The control device CONT drives the field diaphragm 20 and the light shielding plate 40 and also drives the mask stage MST, and sets the pattern of the mask M to set the irradiation area of the exposure E × irradiation. The control device CONT uses a projection optical system Pla to PLg.

10170pif.ptd Page 28 561523 V. Explanation of the invention (25) The field of view aperture 20 and the light shielding plate 4 are set separately, and the size and shape of the opening κ are adjusted to set the projection area 5 0 a ~ 5 projected by the photosensitive substrate. The degree of rabbit in the scanning direction (X direction) and the width of the scanning direction (γ direction). Then, the control device C 0 N T sets the position of the masker at the time of continuous exposure according to the preset formatted exposure processing related information. Here, here. Examples are shown in FIG. 10. During the first scanning exposure, the masker 3 〇 Β is configured to cover a part of the projection area 5 o e; the masker 3 0 A is set to avoid the light path. On the other hand, at the time of the second scan 'exposure, the masker 30A is arranged to cover a portion of the projection area 50c. The masker B is set to avoid the optical path. The control device C〇 NT ′ sets the position of the mask 3 0 B when the first scanning exposure is performed (step s 2). That is, the control device CO NT masks the pattern of the mask M provided in the connection portion 48 on one side of the exposure area of the exposure EL of the mask μ (that is, the division pattern 4 6), and shields the mask for exposure of He Jibin.器 3〇Β the position. Specifically, the control device C 0 Ν Τ will be positioned on the mask M to match the position corresponding to the splicing part (repeating area) 4 8 with the alignment mark 6 〇β and the position of the front end of the mask 3 〇B. . When the alignment mark 6β and the masker 30B are aligned at the position of the screen M, as shown in the pattern diagram in FIG. 12, the light emitting section 7 is used for calibration provided on the substrate table pST. The collimated light is emitted and irradiated to the position registration mark 60B of the mask > by the projection optical system pL. The position of the alignment mark 6 〇 Β irradiated onto the mask μ passes through the mask, passes through the front end of the mask 30 β, and receives light at the calibration light section 71. At this time, while the collimated light irradiation position is aligned with the standard 5 ′, the masker 3 〇 Β is moved in the γ direction, and can be produced.

10 丨 7 () P1 I’.ptd Page 29 561523 V. Description of the invention (26) The calibration light received by the light receiving unit 7 1 is shielded by the shader 3 0 B, and the light receiving amount is only 50%. At this time, the detection signal of the light receiving unit 71 is output to the control device CONT, and the control device CONT changes the position of the mask 3 0 B from the state where the light receiving unit 71 receives the calibration light to the state where the light is not received, and the control position. Matching mark 6 〇 B, judging that the shader 3 〇 B has been matched. The mask 3 〇 B is aligned with the position alignment mark 6 Ο B, and the butt joints 48 are also aligned. Here, the position alignment mark 60B is provided at the -X side end portion and the + X side end portion of the mask M. The two position alignment marks 6 〇 Β are respectively aligned with the position of the masker 3 〇 Β. If done in advance, you can set the position of the masking 3 〇 Β based on the pre-made position information and scan and expose. Device 3 Ο Β sets the desired connection part 4 8. As described above, after the position of the mask 3 〇 Β and the mask position registration mark 6 〇 B is matched, the control device CONT controls the position of the mask 30B and the mask stage MST (mask M) at this time. The information is stored in a storage device (not shown) (step S 3). Next, the controller CONT sets the position of the mask 30A when the second scanning exposure is performed (step S4). That is, the control device CONT matches the position of the mask 3 0 A for continuing the exposure to the pattern in the contiguous portion 49 on one side of the irradiation area (divided pattern 4 7) of the exposure EL of the mask M. Specifically, the control device CONT aligns the position matching mark 60 A provided on the mask M with the position corresponding to the connection portion (repeat area) 4 9 and the position of the front end portion of the mask 30 A. At the position of the mask M, the alignment mark 6 0 A and the position of the masker 30 A are aligned, and can be performed in the same sequence as the method illustrated in FIG. 12.

10170pif.ptd Page 30 561523 5. Description of the invention (27). The position of the mask 3 ο A is aligned with the position matching mark 6 〇 A, and the docking portion 4 9 can also be aligned. Here, the position alignment mark 60 A is also provided at the two ends of the -X side end and the + X side end of the mask M. The two position alignment marks 6 Ο Α are aligned with the position of the shader 3 〇 A respectively, and they are prepared in advance. According to the position information, the scanning exposure can be performed while setting the position of the masker 3 〇 A. The masker 3 〇 A can be used to set the desired connection section 49. As described above, after the position of the mask 3 〇 A and the mask position match 6 〇 A position, the control device C 〇 NT, at this time the mask 3 OA and the cover MST (mask M) The position-related information is stored in the storage device (step S5). Next, illuminance correction and position detection are performed for each projection area 50 a to 50 g. First, in a state where the photosensitive substrate P is not placed on the substrate stage PST, an exposure operation is started in an area corresponding to the division pattern 6 2 (the portion of the long LA) on the photosensitive substrate P (step S 6). Specifically, first, the control device CONT drives the filter driving unit 14 and moves the filter 13 so that the light beam from the light source 1 passes through the filter 13 with the maximum transmittance. When the filter 13 is moved, the light beam is illuminated by the light source 1 through the elliptical mirror 1a. The irradiated light beam passes through the filter 13, the translucent mirror 11, the mask M, the projection optical system P1a to PLg, and the like, and then reaches the substrate table PST. At this time, the mask M is moved to a position where a pattern or the like is not formed in the irradiation area where the EL is exposed. At this time, each of the projection areas 50 a to 50 g has been set by each of the field-of-view apertures 20 and the light-shielding plate 40, and the masker 3 0B has retreated from the optical path.

10170pif.ptd Page 31 561523 V. Description of the invention (28) At the same time, 'moving the photodetector 4 1 in the area corresponding to the sub-pattern pattern β 2' in the X direction and the Υ direction, so that The projection area corresponding to L a ~ plg is scanned from 50 a to 50 g. The photometric 'detector 41' can be used to sequentially measure the illuminance of each projection area 50a ~ 50g and the illuminance Wa ~ W1 of the border portion & 1a ~ 5 1 1 (step S7) ° Light detection The detection signal of the controller 41 is output to the control device cONT. The control device CONT performs image processing based on the detection signal of the photodetector 41, and detects the shape and illuminance of each of the projection areas 50a to 50g and the boundary portions 5a to 5111. Then, the control device (0: 0) stores the illuminances of the boundary portions 513 to 511 ^ ~ in the memory device. Next, 'the illuminances of the boundary portions 5 1 a to 5 1 1 measured by the photodetector 41 are Wa ~ W1, in order to make the illuminances Wa ~ W1 slightly predetermined values and (| Wa —Wb |, | Wc-Wd |, | We-Wfl, | Wg-Wh |, | Wi-Wj |, | Wk-Wl |) Become the smallest 'while measuring the illuminance with the photodetector 41, while driving the filters 1 3 for each of the lighting components IM a to IM g (step S 8). In this way, the beams of each optical path can be corrected. At this time, a part of the light beam irradiated by the light source 1 is transmitted by the translucent mirror 丨 丨 into the light detector 1 2, and the light detector 丨 2 detects the illuminance of the incident light beam, and the detected illuminance letter is output to The control device CONT. Therefore, the control device can also control the filter drive unit 1 4 according to the light detected by the light detection ^ § 1 2 ^ ΑΓ7 1/1 戌 # 状 洛 从 — the illuminance of the operation, so that 4 Α ?, the degree of maintaining the value of 疋, 敕 μ, 丨: π J to adjust the individual light amount of each light path. The exposure light s 9 detected by the scanning light detector 41. Feelings of lip Find the position of each boundary part 5 1 a ~ 5 1 1 (step

10170pif.ptd

Page 32 561523 V. Description of the invention (29) That is, 'based on the detection signal of the scanned photodetector 41, the control device CONT estimates the boundary parts 5 1 a to 5 1 ^ of the predetermined coordinate system. According to the estimated shape, the position of each boundary portion 5 1 a to 5 1 1 in the predetermined coordinate system is obtained. Specifically, the triangle-shaped boundary portions 5 1 a to 5 1 1 are estimated to be representative designated positions such as the tip position or the center of the figure. At this time, the position of the photodetector 41 can be estimated based on the amount of driving of each drive section to the reference position. That is, the initial position (standby position) of the photodetector 41 is set as a reference position, and the position where the scanned photodetector 41 can move to the reference position can be estimated. The control device C 0 N T estimates the position of each of the boundary portions 5 1 a to 5 1 1 based on the moving position of the reference position of the photodetector 41 to the reference position. Then, the control device CONT stores the position of each boundary portion 5 1 a to 5 1 1 in the predetermined coordinate system in the memory device. At this time, the relative positions of each projection area 50 a to 50 g are also memorized. After the masker 3 Ο B is withdrawn from the light path, and the light amount adjustment and position detection of each projection area 50a to 5 Og is performed, the control device CO NT arranges the masker 30B at the position set in step S2 according to the information of the memory device. The exposure operation is performed in this state. Then, the control unit CONT uses the photodetector 41 to detect the illuminance of the small area KB corresponding to the projection area 50e of the connection portion 48. Here, the small area K B is continuously attenuated by the masker 3 0 B in the -Y direction to the cumulative exposure amount of the repeated area 64 on the photosensitive substrate P. The detection signal of the photodetector 41 is output to the control device C0NT, and the control device C 0 N T performs image processing based on the detection signal of the photodetector 41 and detects a small

10i70pif.ptd Page 33 561523 5. Description of the invention (30) The shape and illumination of the area KB. Thereafter, the controller cONT stores the shape of the small area KB and the illuminance Wkb in the memory device. The control device cONT then estimates the position and shape of the small area KB based on the information about the amount of light exposed by the photodetector 41. The position of the small area KB refers to a representative designated position such as the front end position or the center position of the graph in the triangular cell area KB. After the position and shape of the illuminance KB in the small area KB is obtained, the control device CONT 'retracts the masker 30B from the optical path and arranges the masker 30a at the position set in step S4' to perform the exposure operation in this state. The control device uses the light detector 41 to detect the illuminance Wka of the small area KA corresponding to the projection area 50c of the connection portion 49 (step SI 1). Here, the small area KA is continuously attenuated in the + Y direction by the masker 3 〇a. The cumulative exposure amount in the repeated region 64 of the photosensitive substrate P. The detection signal of the photodetector 41 is output to the control device c 0 N τ, and the control device C 0 Ν ′ performs image processing based on the detection signal of light detection 4 1 to detect the shape and illuminance of the small area KA. Then, the controller cONT memorizes the shape and illuminance fkb of the far small area KA in the memory device A. The control unit CUNT then estimates the position and shape of the cell area KA based on the information about the light amount of the exposure detected by the light detection as 41. The position of the small region kb refers to a representative designated position such as the front end position or the center of the figure in the small area KA of the triangle. The control device C 0 NT 'is based on the illuminance Wkb of the small area κ b obtained in step S 1 0 and the illuminance Wka of the small area KA obtained in step SI 1 and measures the illuminance using the light detection state 4 1 while The lighting components I μ c and IM c drive the filter and the optical device 13 to make the illuminances W ka and W kb approximately equal to a predetermined value, and make (| wa _ wb |,

l〇170pif.ptd Page 34 561523 5. Explanation of the invention (31) | Wc-Wd |, | We-Wfl, | Wg-Wh |, | Wi-Wjl, | Wk-Wl |, IWka-Wkbl) Is the smallest (step S12). The control device CO NT corrects the shapes of the small regions KA and KB based on the shapes of the small regions K A and KB detected in steps SI 0 and SI 1 (step S 1 3). For example, when the shape of the small area KB detected in the front, the shape of the small area KA detected later is not the desired shape, or if the shape is not uniformly repeated during scanning exposure, or the small areas KA and KB are repeated When the width LK of the area 64 and the width of each of the projection areas 5 2 a to 5 2 f are significantly different, it is necessary to drive the projection optical system PL e or PL c corresponding to the projection area 50 e or the projection area 50 c. Image movement mechanism 19, magnification adjustment mechanism 2 3, right angle 稜鏡 2 4, 2 7 to correct image characteristics (lens correction) of shift, conversion ratio, rotation, etc. In addition, the control device C 0 NT, when the respective shapes of the projection areas 50 a to 50 g are not predetermined shapes, or the overlapping areas 5 2 a to 5 2 between adjacent projection areas 50 a to 50 g The width of f can be driven by the image movement mechanism 19 of each of the projection optical systems PLa to PLg, the magnification adjustment mechanism 23, and the right angles 24 and 27 to correct the characteristics when the width of f changes. The control device CO NT stores these correction values in a memory device. As described above, after performing correction (illumination correction, lens correction) of the projection area 50 a to 50 g including the splicing portion, the actual exposure processing is performed. The control device CONT arranges the mask M on the light path of the exposure, and simultaneously A loader (not shown) loads the photosensitive substrate P on the substrate stage PST and the substrate holder PZ (step S14). Perform a scanning exposure of the younger, and the control device corrects according to the above-mentioned items.

10170pif.ptd Page 35 561523 V. Description of the invention (32) The projected setting or correction value is set in the projection area with a predetermined width in the scanning direction and non-scanning direction according to the field of view aperture 20 and the light shielding plate 40; The mask stage MST is driven, and the irradiation area of the exposure EL is set in accordance with the pattern of the mask M. Then, the position of the mask stage MST is controlled so that at least the segmentation pattern 4 6 used for the first scanning exposure in the pattern region of the mask M can be irradiated by the exposure EL, and as described in FIG. 12, it is used in The position M formed by the mask M is aligned with the mark 6 〇 Β, and the position of the mask 3 〇 Β is adjusted so that the mask 3 〇 Β covers the light path corresponding to the projection area 50 g, and blocks a part of the projection area 50 0 e (Step S 1 5). Then, the position alignment mark 60B of the mask M is used to align the position of the photosensitive substrate P placed on the substrate stage PST with the position of the mask M (step S 1 6). Here, a substrate position registration mark 72 is provided in advance in the vicinity of the continuous exposure area of the photosensitive substrate P, that is, in the vicinity of the pattern area corresponding to the repeated area 64 of the photosensitive substrate P. The control device CONT aligns the position of the mask M placed on the screen stage MST with the alignment mark 6 OB, and the position of the photosensitive substrate P placed on the substrate table PST with the position of the mark 72, and then The exposure area 6 2 exposes the position of the division pattern 46 of the mask M. In addition, when the alignment mark 60 0 B of the position M and the alignment mark 72 of the position P of the photosensitive substrate P are aligned, for example, as shown in the schematic diagram of FIG. The light emitting section 75 irradiates the alignment light of the mask position alignment mark 60B. The alignment light irradiated on the position alignment mark 60B passes through the mask M and is irradiated to the substrate position alignment mark 72 of the photosensitive substrate P via the projection optical system PL. Then, the reflected light reflected by the alignment mark 72 at the position of the substrate passes through the projection optical system PL and the position alignment mark 60B of the mask M, and is provided above the mask M

l () 17 () pif.ptd P.36 561523 5. The light receiving unit 76 of the description of the invention (33) is detected by 6. According to the reflected light of the substrate and the position of the substrate, the mask position is aligned with the reflected light 60B, and the position of the mask position is reflected by 1 ^, and the position of the substrate table PST can be adjusted to be the same. σ heart § 6 0 B and the substrate position alignment mark 7 2 become another, because the reflection of the photosensitive base alignment mark is a glass substrate, so it is not necessary to detect the substrate position through the mask position alignment. The light receiving unit 76, according to the folder of 72, is used to align the light of 5 to 60B with the position of the substrate. The substrate mouth cover is placed here; = light 7, the position of plate ^ is also acceptable. In the same way, in the photo beauty phase P pair β private note and the mask position alignment mark is the same. The substrate position registration marks 60B 'of the two locations of the two ends of the left side of the side end portion and the side of the -X side are individually associated with the position information of + x "" J ". According to ‘μ%, +, ^ π ^ Tian Weiyou, know the exposure accuracy. After the screen M and the treatment age ^ ′ ηβ perform the position alignment of the mask M and the photosensitive substrate P, and the position of the mask ρ:, the control device CONT performs a scanning exposure process on the photosensitive substrate P once. (Step si7). First, β, the part corresponding to the division pattern 62 (the part of the length LA) is exposed. This% ^ 'Illumination of the illumination module IMf corresponding to the projection optical system pLf I. Door 6' The drive of the shutter drive section β a is inserted into the optical path, as shown in FIG. Light path of illumination light. At this time, the illumination shutters β of the illumination modules IMa to 1Me and iMg open the respective optical paths. However, the masker 30B covers a part of the projection area 50 e and the entire light path of the projection area 50 g. Due to the shutter 30B, a small area KB having a γ-direction light reduction characteristic is formed in the projection area 50e. The photosensitive substrate p is set to include a peripheral circuit 6 1 a.

10l7 () Pif.ptd Page 37 561523 V. Description of the invention (34) An exposure area with a length LA in the Y direction of a part of the pixel pattern 60. Then, the mask M and the sensor substrate P are moved synchronously in the X direction, and the first scanning exposure is performed. In this way, as shown in Fig. 10, the division pattern 6 2 set by a part of the projection areas 50a, 50b, 50c, 50d and the projection area 50e is exposed on the photosensitive substrate P. . Moreover, due to the small area KB set by the masker 30B, the repeating area 64 formed on the side of the -Y side of the division pattern (exposure area) 62 due to scanning exposure is toward the -Y side of the division pattern 62. Continuous decay exposure. Next, in order to perform the second scanning exposure, position alignment of the substrate stage P S T to a predetermined position is performed (step S 1 8). The specific method is to move the substrate stage P S T to a predetermined distance in the + Y direction and perform fine adjustment and adjustment at the same time. In order to align the position of the substrate table PST for the second scanning exposure, the mask position corresponding to the mask position formed at the inner contiguous portion 48 of the mask M is aligned with 60 A, and the area 6 is repeated in the photosensitive substrate P. 4 corresponds to the position of the formed substrate position alignment mark 7 2. The control device C Ο NT is explained in sequence as shown in FIG. 13. The light emitting section 75 emits correction light to the mask position registration mark 6 0 A, and then irradiates the photosensitive substrate P through the projection optical system based on the correction light. The reflected light of the position alignment mark 72 and the reflected light of the mask position alignment mark 60 A adjust the position of the substrate table PST so that the screen alignment mark 60A and the substrate position alignment mark 72 match. As described above, using the mask position registration mark 60 formed on the mask M and the substrate position registration mark 72 formed on the photosensitive substrate P, the position of the joint portion can be improved when the exposure is continued. Accuracy of splice position.

10170pif.ptd Page 38 561523 V. Description of the invention (35) After the position of the mask M and the photosensitive substrate P are matched, the control device CO NT moves the masker 3 〇 B away from the light path of the exposure EL, and simultaneously makes the masker 3 〇 A moves in the Y direction, covering a part of the projection area 50 c and the entire light path of the projection area 50 a (step S 1 9). At this time, the position of the mask 3 〇 A coincides with the position of the mask M. As shown in FIG. 12, the position of the mask 3 6 A can be overlapped with the position of the mask 3 Α. The masker 30 A aligned at a predetermined position forms a small area K A having a light reduction characteristic in the Y direction in a part of the projection area 50 c. In addition, the illumination shutter 6 of the illumination module IMb corresponding to the projection optical system PLb is driven into the optical path by the shutter driving section 6a, and as shown in FIG. 10, the illumination light corresponding to the optical path of the projection area 50b is blocked. . At this time, the lighting shutters 6 of the lighting components I M a, I M c to I M g open each optical path. At this time, the shader 3 A covers a part of the projection area 50 c and the light path corresponding to the projection area 50 a. The photosensitive substrate P is set to Y including the peripheral circuit 6 lb and a part of the day pattern 60. Exposed area with directional length LB. In this way, the control device C 0 NT moves the substrate stage PST in the + Y direction based on the repetitive area 64 (continued portion 48) formed by the small area KB exposed in the first scanning exposure, so that the small area projected by the second scanning exposure is projected and exposed. The KA's splicing section 4 9 matches the splicing section of the first scan. Here, when the progress of the second scanning exposure is moved, or when it is arranged on the optical path of the masker 3 0 A, the control device CO NT can correct the values according to the setting values stored in the memory device during the correction, and the correction values can be adjusted. The photosensitive substrate P corrects image characteristics, or makes fine adjustments to the masker 3 〇 B. That is, it is possible to adjust the image characteristics (movement, transformation ratio, rotation) so that the repeating area 64 based on the small area KA

10170pif.ptd Page 39 561523 V. Description of the Invention (36) It is consistent with the repeated region 64 based on the small region K B. In addition, the position of the substrate stage PST can be adjusted so that the repeating areas 6 4 of the pattern and the exposure amounts of the respective exposures other than the repeating areas are slightly matched. In other words, the respective shapes and light amounts of the cell areas KA and KB are detected in advance in steps S10 to S13, and adjusted and stored. The control device CO NT finely adjusts the position of the substrate table PST according to the shape or amount of light of each of the small regions κ A and KB, so that the repeating region 64 of the pattern is outside the repeating region 6 (ie, regions 6 2 and 6 3). The illumination is slightly the same. Specifically, the exposure areas of the small area KB in the first scanning exposure and the small area K A in the second scanning exposure in the repeated area 64 are the illuminance distributions shown in FIG. 14 respectively. As shown in FIG. 14 (a), the total exposure of the small area KB of the first scan exposure and the small area KA of the second scan exposure in the repeated area 64 is smaller than that in the repeated area 64. When the exposure exposure is low, adjust the position of the substrate stage PST to increase the overlap. As shown in Figure 14 (b), the exposure exposures at all positions can be made slightly consistent (step S 2 0 ). Alternatively, it is also possible to drive the masker 30 and adjust the exposure irradiation amount in the repeating region 64 to make the exposure irradiation amount in the repeating region 64 to be approximately the same as the exposure irradiation amount in the repeating region 64. As described above, the light amount of each light path beam can be corrected. In the second scanning exposure, the position of the masker 3 0 A on the optical path is set in advance during calibration. The relationship between the desired position and the reference position is set in advance. Therefore, according to the set value, the masker 3 0 is also moved. can. During the second scanning exposure, the substrate table PST moves upward without using the substrate position registration mark 72 and the mask position registration mark 60A. This field

10170pif.ptd Page 40 561523 V. Description of the invention (37) When the substrate table PST moves up, it can be moved based on the information obtained in advance during calibration. In addition, the substrate stage pst can also be moved according to the positions of the respective small areas KA and KB obtained during the calibration, that is, the repeating area 6 4 (the contiguous portion 4 8) corresponding to the reference position in the first scanning exposure projection repeating area 6 4 The positional relationship has been obtained. During the second scanning exposure, the position of the substrate PST is set so that the projection exposure continuous portion 49 and the repeating region 64 are in a predetermined positional relationship. Then, the mask M and the photosensitive substrate P are moved synchronously in the X direction, and a second scanning exposure is performed (step S 2 1). As shown in Fig. 10, on the photosensitive substrate P, a division pattern 63 set by a part of the projection area 50c, 50d, 50e, 50f, and 50g is exposed. Due to the small area KA set by the masker 3 0 A, the repeating area 6 4 formed on the + Y side of the division pattern 6 3 (exposure area) during scanning exposure has the division pattern 6 3 side continuous in the + Y direction. The attenuated light quantity distribution is repeated with the repeating area 64 formed during the first scanning exposure to obtain a predetermined combined exposure quantity. As described above, a mask M is completed, and the exposure is continued on the photosensitive substrate P which is larger than the mask M (step S 2 2). As described above, for the pattern image (projection area) set by the field diaphragm 20 and the light shielding plate 40, a mask 30 that can be moved in the Υ direction can be arranged, and the pattern image (projection area) can be arbitrarily set in the continuation part of the pattern of the mask M ( Split position) 4 8, 4 9. Therefore, the size of the pattern formed on the photosensitive substrate P can be arbitrarily set, and an arbitrary element can be manufactured at a high rate. The mask 30 is set to move in the non-scanning direction and has a light reduction characteristic that continuously attenuates the cumulative exposure amount in the pattern continuum (repeated area) to the periphery of the illuminated area of the illumination optical system IL, so it can be set Continuation

10170pif.ptd Page 41 561523 V. Explanation of the invention (38) The exposure amount is a desired value, which can make the exposure amounts other than the repeating area 64 and the repeating area 6 4 consistent. Therefore, it is possible to perform exposure processing with high accuracy. In addition, the light shielding plate 40 and the shader 30 can move the field diaphragm 20 respectively, so the size or shape of the projection area 50 0 a to 50 g of the exposure EL on the photosensitive substrate P can be arbitrarily set, so the exposure is continued. In this case, it is possible to improve the bonding accuracy or the uniformity of the exposure amount. The projection area is divided into a plurality of 50 a to 50 g by the field aperture 20, the light shielding plate 40, and the mask 30. The projection areas are joined and exposed to form a so-called multi-mirror scanning type exposure device. It maintains good imaging characteristics, and can form large patterns without increasing the size of the device. The projection optical system PL is formed by a plurality of projection optical systems PL a to PL g juxtaposed in a direction orthogonal to the scanning direction. Among the plurality of optical systems PL a to PL g, the optical path of a predetermined optical system can be blocked, and it can be easily performed. Adjust the projection area for each scan exposure. In addition, when the division patterns 6 2 and 6 3 are joined, a large-scale mask M is not required, and a uniform pattern can be formed on the large-sized photosensitive substrate P. Therefore, it is possible to prevent the device from increasing in size and cost. The shape of the divided projection areas 50 a to 50 g is trapezoidal. Therefore, when the continuous exposure is performed, the exposure amount other than the connection portion and the connection portion can be easily achieved / accomplished. On the mask M, position matching marks 4 8 and 4 9 corresponding to the continuous exposure area are provided with position matching marks 6 0 A, 6 〇 Β which are aligned with the position of the mask 30, and the positions are used to align Mark, can accurately match the position of the masker 30. Therefore, a desired exposure amount can be exposed at 60 in the repeating area. On the photosensitive substrate P ’, which is equivalent to the area 6 4 after the exposure, and is also provided with a cover

10170pif.ptd Page 42 561523 V. Explanation of the invention (39) Screen position alignment mark 6 0 A, 6 〇 B position alignment substrate position alignment mark 7 2 Therefore, the position of the mask M and the photosensitive substrate are well aligned. It can improve the exposure accuracy 'and' for multiple scanning exposures' When moving the substrate stage PST in the previous step, it is also possible to use position alignment marks 6 0 A, 6 〇 Β, 7 2 so that the position can be raised Butt precision. In the present embodiment, measurement and correction are performed on the illuminance of the boundary portion 5 1 a to 5 1 1 where the projection shame region 50 0 a to 50 g is repeated, so that the illuminance of the boundary portion 5 2 a to 5 2 f is slightly consistent. Uniform illumination. Then change the position in the γ direction of the shader 30 or the light shielding plate 40, and the illuminance of the repeating area 64 of the divided pattern 6 2, 6 3 is the same as that of the other areas, so that the entire pattern is exposed with a uniform exposure. Make the pattern line width uniform throughout the pattern. Therefore, the quality of the liquid crystal element after the exposure can be improved. / In FIGS. 9 and 10, the length lk in the Y direction of the repeating area 64 is set to be the same length as the repeating areas 52a to 52f of the projection areas 50a to 50g. However, it is possible to change the inclination angle of the front end portion of the mask 30A (30B) so that the length in the Y direction of the repeating region 64 between $ cuts 62 and 63 is the same as that of the above-mentioned region 1a 52a to 52f. The length in the Y direction may be different. °° In this embodiment, when the division pattern 6 2 and the division pattern 6 3 are connected, when the first scanning exposure is performed, the projection area & 5 0 e is covered by a masker 3 〇B. Part, forming a small area κ B; on the second scanning exposure day ^, a part of the projection area 50 c is covered with a masking device 3 0 A to form a small area & a. These small areas KA and KB are overlapped, but the projection areas of the small areas KA and KB are formed, and any of the projection areas 50 a to 50 g may be used. That is, multiple scanning exposures are performed on an arbitrary projection area to form a γ-direction dimming characteristic.

l〇170pi f.ptd page 43 561523 5. The small area of the invention description (40) can overlap these small areas. In addition, the lighting shutter 6 can block any light path. In this embodiment, the masker 30 B is used for the first scanning exposure, and the masker 30 A is used for the second scanning exposure. However, as shown in FIG. 15, the masker 30 B is used for the first scan exposure, and the masker is not used for the second scan exposure. It is also possible to use the illumination shutter 6 to cover the light path of the predetermined projection area. In FIG. 15, during the first scanning exposure, the light path corresponding to the projection area 5 0 f is blocked by the illumination shutter 6; during the second scanning exposure, the projection area 5 0 a, 50 is blocked by the illumination shutter 6. b corresponding light path. In the above-mentioned embodiment, there are seven parallel plural light paths, and correspondingly, an illumination module I M a to I M g and a projection optical system P L a to P L g are provided. However, a configuration in which one light path is provided, and one lighting component and one projection optical system are also possible. That is, it can be applied to an exposure method and an exposure apparatus that are divided into a plurality of scan exposures, and a part of the pattern image of the mask is repeatedly exposed. In addition, the plurality of light paths arranged in parallel is not limited to seven, and for example, a configuration having six or less or eight or more optical paths may be used. In the above-mentioned embodiment ', only one photodetector 41 for detecting information related to the exposure light amount of the projection area is provided, but a plurality of photodetectors whose positional relationship with the reference position is known may be provided. The plurality of photodetectors can be used to simultaneously detect the illuminances Wa to W 1 of each of the boundary portions 5 1 a to 5 1 1. This occasion. It is possible to detect the illuminance of each projection area 50 a to 50 g and the boundary portion 5 1 a to 5 1 1 at high speed, or the position of the boundary portion 5 1 a to 5 1 1 to improve workability. In the above embodiment, when the calibration is performed, the illuminance is detected by the photodetector 41, and the calibration is performed based on the detection result. But during calibration,

10170pif.ptd Page 44 561523 V. Description of the invention (41) The actual experimental photosensitive substrate is subjected to exposure processing, and the shape of the formed pattern is measured, and correction may be performed based on the measurement results. Furthermore, in the above embodiment, after the first scanning exposure is completed, the position of the photosensitive substrate P after the previous step of the second scanning exposure is aligned, the mask position alignment mark 6 formed on the mask M is used. Align the mark 7 2 with the substrate position formed on the photosensitive substrate P. However, during calibration, you can set the distance of the previous step first, and then move according to the set distance. In addition, the liquid crystal element (semiconductor element) is formed by stacking a plurality of material layers. For example, when the exposure process is performed under the second layer, the photosensitive substrate P is deformed due to development processing or various heat treatments. In this case, it is only necessary to estimate the amount of change in image characteristics such as the ratio of the photosensitive substrate P during correction, calculate a correction value (offset amount), and then move forward based on the correction value. Moreover, in this case, as described above, the projection area can be set by driving the position of the shutter 30 or the light shielding plate 40 according to the change amount of each image characteristic such as rotation and shift, so as to control the continuous exposure. Moreover, in the above embodiment, there is only one light source 1, but there may be more than one light source 1 in each optical path, and a plurality of light sources are provided in total. A plurality of light sources are combined into a light beam by a light guide device, etc. It is also possible to distribute light to each optical path. In this case, not only the adverse effects caused by the difference in the light amount of the light sources can be ruled out, but the disappearance of one light source also only reduces the overall light amount, which can prevent the exposed element from becoming unusable. In addition, a plurality of light sources 1 are provided. When the light beams are combined and distributed, the exposure amount of the exposure can be adjusted by using a filter that can change the amount of transmitted light, such as an ND filter, and inserted into the optical path to adjust the desired exposure amount. To control each projection area

10170pif.ptd Page 45 561523 V. Description of the invention (42) The exposure dose of 50a to 50g can also be used. In the above-mentioned embodiment, the shape of the projection areas 50 a to 50 g is trapezoidal, but hexagonal, rhombic, or parallelogram shapes may be used. However, the use of a trapezoidal shape allows the continuous exposure to be performed easily and stably. In the above-mentioned embodiment, the daylight surface is synthesized on the photosensitive substrate P by two scanning exposures, but it is not limited to this. For example, the daylight surface may be synthesized on the photosensitive substrate P by three or more scanning exposures. In the above embodiment, the projection optical system PL is divided into a plurality of devices (PLa to PLg). However, it can be easily understood from FIG. 6 that a rectangular gap is formed by the field of view r diaphragm 2 0 and the light shielding plate 40 ( s 1 it) single-lens projection optical system, or non-rectangular, exposure device with a circular arc-shaped exposure area can also be applied. In addition, the second light-shielding plate 30 can be used to move the exposure area so that they can be joined at desired positions. Fig. 16 shows an example in which a second scanning exposure is performed, and a pattern is divided into three divided patterns P a, P b, and P c and then synthesized. The plural projection areas shown in Fig. 16 are not multiple birds, but are arranged in a row. When the pattern P a is exposed, the splicing portion 80 a is formed with a mask 30B; when the pattern Pb is exposed, the splicing portions 80 b and 80 c are formed with a mask 30A and 30B; when the pattern Pc is exposed, the splicing portion 80 is formed with a mask 3 0 A d. Here, around the pattern of the mask M, a periodic pattern 8 1 having a specific shape period as a circuit pattern is formed. The mask M and the positions of the masks 3 A and 30 B coincide with the marks 60 A and 60 B, and are formed at positions corresponding to the boundary portions of the periodic pattern 8 1. In the case where the periodic pattern 81 is to be continuously exposed, in the past, the position of the continuous portion cannot be arbitrarily set because of the splicing section set in accordance with each projection area. The periodic pattern 81 continues to be exposed for a reason

10170pif.ptd P.46561523 V. Description of the invention (43) Difficult; in the present invention, the mask 3 which can be moved in the Y direction is used to 'arbitrarily set the position of the splicing portion', so that the complex formed on the photosensitive substrate p can be made. The periodic pattern 8 1 a to 8 1 h of i is consistent with the number of lines (pitch) of the wiring provided to it, and can continue to be exposed with high accuracy. The masker 3 0 in the above embodiment “the width in the X direction of the front end portion gradually decreases toward the Y direction to form a shield body with a slanted surface” but “as long as the cumulative exposure amount in the Y direction of the repeated area can be continuously reduced during scanning Any shape can be used. For example, the width in the X direction shown in FIG. 17 may be gradually reduced toward the γ direction to form a plurality of jagged shapes. In this case, the formation range of the γ direction according to the tooth portion is the length lk in the υ direction of the repeating area, and the 17th figure shows the state where the illumination shutter 6 covers the light path corresponding to the projection area 5 f. In the embodiment described above, "the masker 30A provided near the projection area 50a, and the masker provided near the projection area 50a" are arranged opposite to each other in the Y direction. However, as shown in Fig. 18, 'the two shields 3 C and 3 D capable of moving in the Y direction may be arranged side by side in the X direction. In this case, among the projection areas 50a to 50g arranged in two rows, the shader 3c corresponds to the projection area 5o of the -X side configuration example, and is set to 0a, 50c, 50e, and 50g. ; The masker 3 0 D corresponds to the setting of the projection areas 50 0 b, 50 0 d, and 50 f on the + X side. The maskers 3 0 C and 3 0 D respectively move in the Y direction to block the light path of a specific projection area among the plurality of projection areas' and set the size and shape of the predetermined projection area. Here, the Y-direction movement of the masker and 30D may be a synchronous movement configuration or a separate movement configuration. In this case, as shown by the dashed lines in FIG. 18, it is also possible to arrange the shutters 30C 'and 30D' that can move in the Y direction at the positions facing each other in the Y direction of the shutters 3C and 3D. .

l〇170pif.ptd Page 47 561523

V. Description of the Invention (44) In the above description of the embodiment, for example, the masker 3 0 A covers the projection area and the light path corresponding to 3 0 a, and the size and shape of the projection area 3 0 C are set as two masks. The device 30 can be arranged across a plurality of projection areas. ^ As shown in the Sanye diagram, the light path corresponding to each of the complex projection areas 50a to 50g, and the structure of a small shader 30 that can be moved in the Y direction may also be provided. The shader 30E corresponding to the projection area 50e). When the light path of a specific image area is to be blocked, for example, when the light paths of the projection areas 50 f and 50 g are to be blocked, the light shutter 6 of the light paths corresponding to the projection areas 50 f and 50 g is used to block the light. can

In addition, as shown in FIG. 20, the projection areas 50 a to 50 g are respectively provided with a small oblique shader 3 oE that can be moved in the Y direction, and can simultaneously block & f several projection areas. It is also possible to use a large flat rectangular masker 30F combination. Here, the masker 30 is arranged near the surface of the photosensitive substrate P, and the positions where the photosensitive substrate P and the mask M are approximately conjugated can be arranged or moved out of the projection optical system PL and the photosensitive substrate ρ according to the movement in the γ direction. .

Fig. 21 is a view of another embodiment of a shader as a second light-shielding plate. The shader 3 shown in Fig. 21 is a light-shielding portion of a point 1 (dGt pattern) provided with a chromium cr on a glass substrate. The component between transmittance and transmittance can be continuously converted. The shutter 3 G is a structure that can be moved in the Y direction, and is provided with a light-shielding portion 77 that blocks light and a light-transmitting portion 7 8 ° that transmits light at a predetermined transmittance. The light-shielding portion 7 7 is provided for opaqueness on a glass substrate. The chromium film of the material is a region where the transmission rate is almost 0%. The light-transmitting portion 78 is changed by vapor-depositing the glass with a light-transmitting material, and the density is vapor-deposited on a glass plate. From the boundary portion with the light-shielding portion 7 7 to the end portion, the transmittance is continuously changed from 0 to 1 0 0% of the area. Here, the size of a slight point of the light transmitting portion 78 is set below the resolution limit of the exposure device Ex.

561523 V. Description of the invention (45) In this way, the light transmitting part 7 8 of the light amount decoration adjustment filter 7 8 can be provided in the shader 30 G, and the repeated exposure area of the pattern image can be continuously attenuated. Since the light-transmitting portions 78 and 8 are formed by patterning chrome dots on a glass substrate, the adjustment of the light amount distribution can be performed with excellent precision at a molecular level. Therefore, when the continuous exposure is performed, the exposure amount of the repeated area can be accurately adjusted. In each of the above embodiments, in order to adjust the light amount distribution of the repeating area, an oblique mask or a toothed mask or a mask having a light transmitting portion 78 having a transmittance distribution is used, but it is also possible to use a mask that adjusts the mask. Position in the direction of the light path to adjust the exposure distribution of the repeating area. That is, as shown in FIG. 2 (a), the mask 30 is moved from a position where the mask is in common to a few positions (defocusing), so that the exposure passing through the end of the mask 30 is diffused to The predetermined light quantity distribution illuminates the mask. At this time, the width of the diffused light on the mask (that is, the width of the repeating area) LK. Let the number of openings of the illumination optical system IL be NA, and when the mask 30 is arranged at the position α on the mask M, it is LK. 2χαχΝΑ. As shown in Fig. 22 (b), the light quantity distribution in the width LK is continuously attenuated in the Υ direction. In this way, by adjusting the position of the masker 30 in the optical path direction (Z direction), a repeating region having a desired width LK can also be formed. If the exposure device E X of this embodiment does not use a projection optical system, and instead uses a close contact with the mask M and the photosensitive substrate P, a proximity exposure device of the pattern of the exposure mask M may also be used. The application is not limited to an exposure device for liquid crystals that exposes a liquid crystal display pattern on a corner glass plate. For example, an exposure device for semiconductor manufacturing for exposing a circuit pattern on a semiconductor wafer, or an exposure device for manufacturing a thin film magnetic read head can be applied.

10170pif.ptd Page 49 561523 V. Description of the invention (46) The light source of the exposure device of this embodiment is the g-line (4 3 6 nm), h-line (4 0 5 nm), i-line (3 6 5 nm) In addition, KrF excimer laser (248 nm), ArF excimer laser (193nm), F2 laser (157nm), etc. can be used. The magnification of the projection optical system PL is not limited to a constant magnification system, and any one of a reduction system and an enlargement system is available. For the projection optical system PL, where far-ultraviolet rays such as excimer laser are used, the glass material is made of materials that transmit far-ultraviolet rays such as quartz or fluorite; when F 2 laser or X-ray is used, a reflection inflection system or inflection is used. Optical system of the system. When a linear motor is used for the substrate stage PST or the curtain stage MST, either an air-floating type of an air bearing shaft or a magnetic air-floating type having a Lorentz force (L ore n t z) or a reactive force can be used. In addition, the substrate stage or the curtain stage can be used with or without a guide portion. When a planar motor is used as the driving device of the substrate stage or the curtain stage, one of the magnet group and the armature group is connected to the stage, and the other side of the magnet group and the armature group can be provided on the moving surface side of the stage . As described in Japanese Patent Application Laid-Open No. 8-1 6 6 4 7 5, the reaction force caused by the movement of the substrate stage P S T may be mechanically transmitted to the floor using a frame assembly. The exposure apparatus of the present invention is also applicable to such a structure. As described in Japanese Patent Application Laid-Open Publication No. 8-33202, the reaction force caused by the movement of the cover stage M S T can be mechanically transmitted to the floor using a frame assembly. The present invention is also applicable to an exposure apparatus having this structure. As described above, the exposure device of the embodiment of the present case can maintain various predetermined sub-systems including various constituent elements as described in the patent scope of the present application.

10170pif.ptd Page 50 561523 V. Description of the invention (47) Mechanical accuracy, electrical accuracy and optical accuracy, combined manufacturing. In order to ensure these various precisions, before and after the combination, it is necessary to adjust the optical precision of various optical systems; adjust the mechanical precision of various mechanical systems, and adjust the electrical precision of various electrical systems. The process of assembling an exposure device from each sub-system includes mechanical connections, electrical circuit wiring connections, and piping connections for pneumatic lines. Before these various sub-systems are combined into an exposure device, it is of course necessary to complete the combined engineering of each sub-system. After the completion of the construction of the exposure system of various auxiliary systems, comprehensive adjustments are performed to ensure the accuracy of the entire exposure system. The exposure device is preferably manufactured in a clean room under management of temperature, cleanliness, and the like. As shown in FIG. 23, the manufacturing of a semiconductor element is carried out through a step 2 0 1 of designing the function and performance of the device, a step 2 2 of manufacturing a mask according to the design step, and a step 2 3 of manufacturing a substrate of the element base material. According to the exposure device of the foregoing embodiment, the substrate processing step of exposing the pattern of the mask on the substrate is step 204, the component combination step (synthesis and dicing project, joining process, and packaging process) is step 2 and the inspection step is step 2 of 6 Wait. ADVANTAGEOUS EFFECTS OF THE INVENTION In the present invention, a pattern image set on a field diaphragm and a first mask plate is provided with a second mask plate which can be moved in a direction orthogonal to the scanning direction, and a pattern splicing portion can be set on the mask at will. Therefore, the size of the pattern formed on the photosensitive substrate can be arbitrarily set, and any element can be manufactured with good efficiency. The first and second light-shielding plates can individually move the aperture of the field of view, and can arbitrarily set the size or shape of the illumination area exposed to the photosensitive substrate.

10170pif.ptd Page 51 561523 5. Description of the invention (48) It can improve the joint accuracy and the uniformity of the exposure. In addition, the second light-shielding plate is provided so as to be movable in a direction orthogonal to the scanning direction, and has a light reduction characteristic that continuously attenuates the cumulative exposure amount in the repeating area of the pattern from the periphery of the irradiation area of the illumination optical system, so that the connection The exposure amount of the portion is a desired value so that the overlapped area is consistent with the exposure amount outside the repeated area. Therefore, it is possible to perform a high-precision exposure process and manufacture a high-quality device.

l () 17 () pif.ptd p.52

Claims (1)

561523 6. Scope of patent application 1. An exposure device having an illumination optical system that can irradiate a mask with a light beam, and a mask stage to mount the mask, and a substrate stage to mount a photosensitive substrate that exposes the pattern of the mask; the exposure device can Scanning and exposing the light beam synchronously moving the mask and the photosensitive substrate, and divided into several scanning exposures, so that a part of the pattern image of the mask is repeatedly exposed on the photosensitive substrate to continuously expose the pattern; the feature is: a field of view aperture To set the width in the scanning direction of the illuminated pattern image on the photosensitive substrate; the first light-shielding plate can set the width of the pattern image in a direction orthogonal to the scanning direction; and the second light-shielding plate can be in the scanning direction Moving in the orthogonal direction, the repeating area of the pattern image is set, and the cumulative exposure of the repeating area is continuously attenuated in the same direction as the periphery of the illuminated area. 2. The exposure apparatus according to item 1 of the scope of patent application, wherein the illumination area formed by the field of view aperture, the first light shielding plate, and the second light shielding plate is divided into a plurality of areas. 3. The exposure device according to item 1 of the scope of patent application, characterized in that the illumination areas which are divided into a plurality of illumination areas have trapezoidal openings. 4. The exposure device according to item 1 of the scope of patent application, wherein the second light-shielding plate is provided with a light-shielding pattern on the glass substrate, and continuously changes transmission between the light-shielding portion and the light-transmitting portion. Rate component composition. 5. The exposure device according to any one of claims 1 to 4, wherein a projection optical system is provided to project a pattern image of the aforementioned mask onto a photosensitive substrate, and the mask and the Photosensitive substrate via the projection optical system 10170pif.ptd Page 55 561523 6. The scope of the patent application is arranged in a conjugate relationship. At the same time, the above-mentioned aperture and the first and second light-shielding plates are also arranged to co-exist with the mask and the photosensitive substrate. Evil location. 6. An exposure method, in which while the light beam is irradiating the mask, the beam is moved and the mask and / or the photosensitive substrate are scanned and exposed synchronously, and divided into a plurality of scanning exposures to repeatedly expose a part of the pattern image of the mask A method for continually exposing the pattern on a photosensitive substrate, comprising: setting a width of a scanning direction of the pattern image illuminated on the photosensitive substrate with a field aperture; setting a pattern image orthogonal to the scanning direction with a first light shielding plate And a second light shielding plate that can be moved in the direction orthogonal to the scanning direction of the pattern image and can continuously attenuate the amount of irradiated light of the repeating area to the periphery of the irradiated area. Set the second shutter position together. 7. The exposure method according to item 6 of the scope of patent application, characterized in that, a position pair that matches the position of the second light shielding plate is provided near the pattern area of the mask corresponding to the above-mentioned continuous exposure area. The position of the second light-shielding plate is adjusted by using the position-matching mark and the position of the second light-shielding plate. 8. The exposure method according to item 7 of the scope of patent application, characterized in that, in the vicinity of the patterned area of the photosensitive substrate, which is equivalent to the above-mentioned continuous exposure area, a substrate position registration mark is provided. The substrate alignment mark is aligned with the position alignment mark of the mask. 10170pif.ptd Page 56 561523 6. Application for patent scope 9. A method for manufacturing a component, characterized in that an exposure device as described in any one of claims 1 to 4 of the scope of patent application is used to manufacture a liquid crystal element. I 0. A method for manufacturing a device, characterized in that a liquid crystal device is manufactured using an exposure device as described in item 5 of the patent application range. II. A component manufacturing method is an exposure device that irradiates a mask with a light beam and moves the beam in synchronization with the exposure of the mask and a glass substrate, and combines a part of the pattern of the mask to manufacture a mask The method for manufacturing a liquid crystal element with a larger continuous pattern area is characterized in that: the information on the arrangement of the pattern on the cover of the glass substrate and the connection position of the pattern to be bonded are set as the format on the exposure device; According to the format, the pattern of the mask to be exposed is superimposed, and the irradiation area of the exposure irradiation is set. At the same time, the mask pattern set at the above-mentioned connection position on one side of the irradiation area is aligned with the position of the light shielding plate for exposure. After the exposure; after the exposure, the glass substrate is moved in a direction orthogonal to the scanning exposure direction; at the position where the exposure area of the glass substrate and a part of it are repeated, set the irradiation area to be combined with the exposure mask pattern for exposure. At the same time, for the mask pattern set at the bonding position on one side of the irradiation area, And · exposure. 10170pif.ptd Page 57