JP2001215717A - Scanning exposure method and scanning exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To smoothly connect divided patterns adjacent to each other in a synchronous moving direction when synthesizing screens by connecting the divided patterns on a substrate by synchronously moving a mask and the substrate. SOLUTION: The mask and the substrate P are synchronously moved with respect to irradiation with exposure light and the divided patterns 51 to 54 of the mask are projected to the substrate P. The plural divided patterns 51 to 54 adjacent to each other on the substrate P are connected and exposed. The divided patterns 51 and 52 as well as 53 and 54 adjacent to each other in the synchronous moving direction are partly overlapped on each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning exposure method and a scanning exposure apparatus for exposing a pattern formed on a mask to a substrate by synchronously moving a mask and a substrate in a predetermined direction. The present invention relates to a scanning exposure method and a scanning type exposure apparatus for connecting and exposing a plurality of adjacent divided patterns.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels which can be made thinner have been frequently used as display elements for personal computers and televisions. This type of liquid crystal display panel is manufactured by patterning a transparent thin film electrode into a desired shape on a photosensitive substrate having a rectangular shape in plan view by a photolithography technique. As an apparatus for this photolithography, an exposure apparatus for exposing a pattern formed on a mask (reticle) to a photoresist layer on a photosensitive substrate via a projection optical system is used.

The above-mentioned liquid crystal display panel has been increasing in area due to the ease of viewing the screen. As an exposure apparatus that meets this demand, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-57986, a combination of a plurality of projection optical systems that project a mask pattern onto a substrate in an erect image is used. Are synchronously moved in a predetermined direction and scanned with respect to the projection optical system, so that a large exposure area is provided in a direction orthogonal to the synchronous movement direction, that is, an LCD (Liquid Crystal Displ) formed on a mask.
A scanning exposure apparatus that sequentially transfers patterns such as ay) to an exposure area on a glass substrate has been devised.

At this time, a plurality of projection optical systems are used as projection optical systems for obtaining good imaging characteristics without increasing the size of the apparatus even if the projection area is large. In this case, the projection areas adjacent to each other are arranged such that the ends of the projection areas overlap in a direction orthogonal to the scanning direction. In this case, the field stop of each projection optical system has, for example, a trapezoidal shape, and is set so that the total aperture width of the field stop in the scanning direction is always equal.
Therefore, the above-described scanning exposure apparatus has an advantage that a joint portion of an adjacent projection optical system is overlappedly exposed, and the optical aberration and the exposure illuminance of the projection optical system change smoothly.

In recent years, as a substrate for manufacturing a liquid crystal display panel, a liquid crystal display panel having a larger display area for a television or the like and having a larger display area has been manufactured in order to improve productivity by multi-paneling the liquid crystal display panel. 50cm ~ 70
It has been considered to use a large glass substrate of cm □ or more. As described above, in order to expose a liquid crystal display panel corresponding to a substrate size having a large display area, a method of performing scanning exposure by using a mask having a size equal to the substrate size and a method of exposing a pattern of one liquid crystal display panel are used. A method of dividing the image into a plurality of areas and synthesizing the patterns is considered. In the former method, a high-speed throughput can be obtained, but the cost of the mask becomes enormous, which is not practical.

On the other hand, in the latter method, a step occurs due to a pattern drawing error of a mask, an optical aberration of a projection optical system, a positioning error of a stage for moving a glass substrate, and the like at a pattern joint, and the characteristics of the device are reduced. Or be impaired. Furthermore, when the synthesized patterns are superimposed in multiple layers, the overlay error of the exposure area of each layer and the line width difference of the pattern change discontinuously at the joint of the pattern, and when the liquid crystal display panel is turned on, the joint Therefore, there is a problem that the quality of the device is deteriorated, for example, color unevenness occurs.

As a scanning exposure apparatus for exposing a large glass substrate while solving this problem, for example, Japanese Patent Laid-Open No. Hei 10-64782 is provided. This is because, after scanning exposure is performed by synchronously driving a mask stage holding a mask and a substrate stage holding a glass substrate, the mask stage and the substrate stage are moved by the width of the illumination area in a direction orthogonal to the synchronous movement. By repeating the step of moving by a distance once or several times, a plurality of divided patterns are connected and transferred onto a large glass substrate.

[0008]

However, the above-described conventional scanning exposure method and scanning exposure apparatus have the following problems. Recently, the demand for a larger area of the liquid crystal display panel has been further increased, and it has been necessary to expose a larger glass substrate. For this purpose, a method of combining screens by connecting divided patterns vertically and horizontally is conceivable. However, conventionally, divided patterns cannot be connected smoothly in the scanning direction (synchronous movement direction), and scanning is performed in the same manner as in the non-scanning direction. There has been a demand for a screen combining method that can maintain the quality of a device even when connected in directions.

The present invention has been made in view of the above points, and when synthesizing a screen by connecting a mask and a substrate synchronously and connecting divided patterns on the substrate, a synchronous moving direction is used. It is an object of the present invention to provide a scanning exposure method and a scanning exposure apparatus that can smoothly connect adjacent divided patterns.

[0010]

In order to achieve the above object, the present invention employs the following configuration corresponding to FIGS. 1 to 19 showing an embodiment. According to the scanning exposure method of the present invention, the mask (M) and the substrate (P) are synchronously moved with respect to the irradiation of the exposure light, and the divided patterns (51 to 54) of the mask (M) are projected onto the substrate (P). A scanning exposure method for connecting and exposing a plurality of adjacent divided patterns (51 to 54) on a substrate (P), wherein the divided patterns (51 and 52, 53 and 54) adjacent in a synchronous movement direction Are partially overlapped with each other.

In the scanning exposure apparatus according to the present invention, a mask stage (4) for holding a mask (M) and a substrate stage (5) for holding a substrate (P) with respect to a region irradiated with exposure light.
Is a scanning type exposure apparatus (1) for connecting and exposing a plurality of divided patterns (51 to 54) adjacent to each other on a substrate (P), and for exposing and opening exposure light. (12), the light shielding state of the irradiation area is changed during the synchronous movement, and the divided patterns (51) adjacent to each other in the synchronous movement direction are changed.
And a control device (17) for controlling the mask stage (4), the substrate stage (5), and the light shielding device (12) so that the mask stage (52, 53 and 54) partially overlap each other. It is.

Therefore, according to the scanning exposure method of the present invention, when each of the divided patterns (51 to 54) is scanned and exposed, the overlapping portion (51, 52) of the divided patterns (51 and 52, 53 and 54).
a and 52a, and 53a and 54a), the exposure amount (exposure energy amount) is proportionally reduced toward the boundary, so that when the exposure is performed in a superimposed manner, the exposure amount of this portion is substantially equal to the exposure amount of the non-overlapping portion. Can be matched. Therefore, the division patterns adjacent to each other in the synchronous movement direction (51 and 5)
2, 53 and 54) overlap each other even if there is a pattern drawing error of the mask (M), an optical aberration of the projection optical system (3), or a positioning error of the stage (4, 5) for moving the substrate. (51a-54a) can prevent the step from changing smoothly and deteriorating the device characteristics. In the adjustment of the exposure amount, the mask stage (4) and the substrate stage (5) are synchronously moved, and the overlapping portions (51a to 54a) of the divided patterns (51 to 54) are exposed to the exposure light irradiation regions (34a to 34).
When it is located in e), the irradiation of the exposure light in the overlapping portions (51a to 54a) can be executed by switching between irradiation and light shielding.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of a scanning exposure method and a scanning exposure apparatus according to the present invention will be described with reference to FIGS. Here, a case where a rectangular glass substrate used for manufacturing a liquid crystal display panel is used as a substrate and a circuit pattern of a liquid crystal display device formed on a mask is transferred onto the glass substrate will be described. Also, here, an example will be described in which the projection optical system includes five projection system modules, and a screen is synthesized on a glass substrate by four scanning exposures.

FIG. 1 is a perspective view showing a schematic configuration of a scanning exposure apparatus 1 according to the present invention. Scanning exposure apparatus 1
Is an illumination optical system 2 and a plurality of projection system modules 3a to 3
e, a projection optical system 3, a mask stage 4 for holding a mask (reticle) M, and a substrate stage 5 for holding a glass substrate (substrate) P.
The mask M and the glass substrate P are arranged along the XY plane, and the scanning direction (synchronous movement direction) of the XY plane is the X direction, and the non-scanning direction orthogonal to the X direction is the Y direction.
The optical axis direction orthogonal to the Y plane is described as a Z direction.

As shown in FIG. 2, the illumination optical system 2 includes a light beam (exposure light) emitted from a light source 6 such as an ultra-high pressure mercury lamp.
Are illuminated on a mask M, and illumination system modules 10a to 10e (corresponding to FIG. 1) provided corresponding to the dichroic mirror 7, the wavelength selection filter 8, the light guide 9, and the projection system modules 3a to 3e, respectively. 2 shows only the one corresponding to the illumination optical system 10a for the sake of convenience.)

The light beam emitted from the light source 6 is condensed by the elliptical mirror 6a and then enters the dichroic mirror 7. The dichroic mirror 7 reflects light having a wavelength required for exposure and transmits light having other wavelengths. The luminous flux reflected by the dichroic mirror 7 is
The light beam enters the wavelength selection filter 8, becomes a light beam having a wavelength (usually, at least one band of g, h, and i lines) suitable for the projection optical system 3 to perform exposure, and enters the light guide 9. The light guide 9 splits the incident light beam into five light beams, and passes through the reflection mirror 11 to each of the illumination system modules 10a.
To 10e.

Each of the illumination system modules 10a to 10e is generally constituted by an illumination shutter (light shielding device) 12, a relay lens 13, a fly-eye lens 14, and a condenser lens 15. In the present embodiment, the illumination system modules 10b to 10b having the same configuration as the illumination system module 10a are described.
10e are arranged at regular intervals in the X direction and the Y direction. Then, each of the illumination system modules 10a to 10a
The light flux from e illuminates different illumination areas on the mask M.

The illumination shutter 12 is disposed behind the light guide 9 so as to be able to advance and retreat with respect to the optical path of the light beam.
The illumination shutter 12 shields the light flux from the optical path to the mask M and the glass substrate P when blocking the optical path, and releases the light flux to the mask M when opening the optical path.
And irradiating the glass substrate P with a light beam. Further, the illumination shutter 12 is provided with a shutter drive unit 16 for moving the illumination shutter 12 forward and backward with respect to the optical path. The drive of the shutter drive unit 16 is controlled by the control device 17.

On the other hand, each of the illumination system modules 10a to 10e
Is provided with a light amount adjusting mechanism 18. The light amount adjusting mechanism 18 adjusts the exposure amount for each optical path by setting the illuminance of the light beam for each optical path, and is configured by a half mirror 19, a detector 20, a filter 21, and a filter driving unit 22. I have. Half mirror 19
Is arranged in the optical path between the filter 21 and the relay lens 13 and allows a part of the light flux transmitted through the filter 21 to enter the detector 20. The detector 20 is
It detects the illuminance of the incident light beam and outputs a detected illuminance signal to the control device 17.

The filter 21 is formed by patterning a glass plate on a glass plate or the like in the form of a chromium or the like, and is formed so that the transmittance gradually changes linearly within a certain range along the Y direction. Inside illumination shutter 12 and half mirror 1
9 is arranged. These half mirrors 19,
The detector 20 and the filter 21 are provided for each of a plurality of optical paths. The filter driving unit 22 moves the filter 21 along the Y direction based on an instruction from the control device 17.

Accordingly, the control device 17 controls the filter driving section 22 based on the illuminance of the light beam detected by the detector 20, so that the illuminance on the glass substrate P becomes a predetermined value for each optical path. The amount of light for each can be adjusted.

The light beam transmitted through the light amount adjusting mechanism 18 reaches the fly-eye lens 14 via the relay lens 13.
A secondary light source is formed on the exit surface side of the fly-eye lens 14 so that the illumination area of the mask M can be irradiated with uniform illuminance via the condenser lens 15.

The luminous flux transmitted through the mask M enters the projection system modules 3a to 3e, respectively. Then, the pattern of the mask M in the illumination area is transferred onto the resist-coated glass substrate P with a predetermined imaging characteristic. As shown in FIG. 3, each of the projection system modules 3a to 3e includes an image shift mechanism 23, two sets of catadioptric optical systems 24 and 25, a field stop 26, and a magnification adjustment mechanism 27.

The light beam transmitted through the mask M enters the image shift mechanism 23. The image shift mechanism 23 shifts the pattern image of the mask M in the X direction or the Y direction, for example, by rotating two parallel flat plate glasses around the Y axis or the X axis, respectively. Image shift mechanism 2
The light beam transmitted through 3 enters a first set of catadioptric optical system 24. The catadioptric optical system 24 forms an intermediate image of the pattern of the mask M,
8, a lens 29 and a concave mirror 30.
The right-angle prism 28 is rotatable about the Z axis, and is configured to rotate (rotate) the pattern image of the mask M.

At this intermediate image position, a field stop 26 is arranged. The field stop 26 sets a trapezoidal projection area on the glass substrate P. The light beam transmitted through the field stop 26 enters the second set of catadioptric optical system 25. The catadioptric optical system 25 includes a right-angle prism 31, a lens 32, and a concave mirror 3 like the catadioptric optical system 24.
3 is comprised. Also, the right angle prism 31
It is rotatable about an axis, and is configured to rotate the pattern image of the mask M.

The luminous flux emitted from the catadioptric optical system 25 passes through a magnification adjusting mechanism 27 and forms a pattern image of a mask M on the glass substrate P at the same erect magnification. Magnification adjustment mechanism 2
Reference numeral 7 denotes a pattern image of the mask M, which includes, for example, three lenses of a plano-convex lens, a biconvex lens, and a plano-concave lens, and moves a biconvex lens located between the plano-convex lens and the plano-concave lens in the Z-axis direction. Is changed.

FIG. 4 shows a projection area (image field) 34 of the projection system modules 3a to 3e on the glass substrate P.
It is a top view of a-34e. As shown in this figure, each of the projection areas 34a to 34e has a trapezoidal shape, and includes projection areas 34a, 34c, 34e and projection areas 34b, 34d.
Are arranged at intervals in the X direction with their short sides facing each other. Further, the projection regions 34a to 34e are formed by connecting the ends of the adjacent projection regions (35a and 35b, 35c and 35c).
d, 35e and 35f, and 35g and 35h) are arranged in parallel so as to overlap in the Y direction, as indicated by the two-dot chain line, and are set so that the total widths of the projection areas in the X direction are substantially equal. That is, the exposure amounts when scanning exposure is performed in the X direction are equalized.

As described above, each of the projection system modules 3a-3
e, the joint area 36 where the projection areas 34a to 34e overlap
a to 36d, the joints 36a to 36d
, The change in optical aberration and the change in illuminance can be made smooth. The shape of the projection areas 34a to 34e in the present embodiment is a trapezoid, but may be a hexagon, a rhombus, a parallelogram, or the like.

The mask stage 4 holds the mask M and has a long stroke in the X direction for performing one-dimensional scanning exposure and a small stroke of about several mm in the Y direction orthogonal to the scanning direction. have. As shown in FIG. 2, the mask stage 4
Stage drive unit 37 that drives in the Y and Y directions
Is provided. This mask stage driving unit 37
It is controlled by the control device 17.

As shown in FIG. 1, movable mirrors 38a and 38b are provided at the edges on the mask stage 4 in orthogonal directions. A laser interferometer 39a is arranged to face the movable mirror 38a. In addition, the moving mirror 38b
, A laser interferometer 39b is arranged to face.
These laser interferometers 39a and 39b emit laser beams to the moving mirrors 38a and 38b, respectively.
By measuring the distance between the mask stage a and the mask 38b, the position of the mask stage 4 in the X direction and the Y direction, that is, the position of the mask M can be detected with high resolution and high accuracy. Then, the detection results of the laser interferometers 39a and 39b are output to the control device 17, although not shown.

The substrate stage 5 holds the glass substrate P. Like the mask stage 4, the substrate stage 5 has a long stroke in the X direction for performing one-dimensional scanning exposure and a step in the Y direction orthogonal to the scanning direction. With a long stroke to move. Further, the substrate stage 5 is provided with a substrate stage drive section 40 for driving the substrate stage 5 in the X direction and the Y direction. The substrate stage driving section 40 is controlled by the control device 17.
Further, the substrate stage 5 is also movable in the Z direction. The substrate stage 5 includes measuring means (not shown) for measuring the position in the Z direction between the pattern surface of the mask M and the exposure surface of the glass substrate P. Are always controlled to have a predetermined interval.

Further, movable mirrors 42a and 42b are respectively installed at the edges on the substrate stage 5 in the direction orthogonal to each other. A laser interferometer 43a is arranged to face the movable mirror 42a. Further, a laser interferometer 43b is arranged to face the movable mirror 42b. These laser interferometers 43a and 43b are respectively movable mirrors 42a and
The movable mirrors 42a and 42b emit laser light to the
By measuring the distance between the substrate stage 5
In the X and Y directions, that is, the position of the glass substrate P can be detected with high resolution and high accuracy. Then, the detection results of the laser interferometers 43a and 43b are output to the control device 17 although not shown in the figure.

The control device 17 includes laser interferometers 39a, 3
Monitor the position of the mask stage 4 from the output of 9b,
By controlling the mask stage driving unit 37 to move the mask stage 4 to a desired position, monitoring the position of the substrate stage 5 from the outputs of the laser interferometers 43a and 43b, and controlling the substrate stage driving unit 40. The substrate stage 5 is moved to a desired position. That is, the control device 17 controls the mask stage 4 and the substrate stage 5
The mask M and the glass plate P are synchronized with the projection system modules 3a to 3e in the X direction at an arbitrary scanning speed (synchronous movement speed) by controlling the two driving units 37 and 40 while monitoring the position of It is designed to be moved.

Next, the mask M and the glass substrate P used in the scanning exposure method and the scanning exposure apparatus of the present embodiment will be described. As shown in FIG. 5, a rectangular LCD pattern LP in which four divided patterns 51 to 54 are combined on a screen is transferred to the glass substrate P. Although not shown, the LCD pattern LP is composed of a pixel pattern and a peripheral circuit pattern located around the pixel pattern. In the pixel pattern, a plurality of electrodes corresponding to a plurality of pixels are regularly and repeatedly arranged. . In the peripheral circuit pattern, a driver circuit and the like for driving the electrodes of the pixel pattern are repeatedly arranged.

As shown in FIG. 6A, the divided pattern 5
1 has a rectangular shape with a length in the X direction L11 and a length in the Y direction L21. In the region on the −X side of the divided pattern 51, an overlapping portion 51a having a width L13 exposed partially overlapping with the divided pattern 52 adjacent in the scanning direction is set in a band shape extending in the Y direction. Further, in the region on the −Y side of the divided pattern 51, the width L23 exposed partially overlapping with the divided pattern 54 adjacent in the non-scanning direction.
Are set in a strip shape extending in the X direction. Further, the substantially square region where the overlapping portions 51a and 51b intersect each other has a size of 4 when the divided patterns 51 to 54 are exposed.
The overlapping portion 51c is subjected to multiple exposure.

Similarly, as shown in FIG. 6B, in the + X side area of the divided pattern 52 having the length in the X direction L12 and the length in the Y direction L21, the divided pattern 51 and the divided pattern 51 are partially separated from each other. An overlapping portion 52a that is overlapped and exposed is set, and an overlapping portion 52b that is exposed partially overlapping with the dividing pattern 53 is set in a region on the −Y side of the divided pattern 52,
In an area where the overlapping portions 52a and 52b intersect, an overlapping portion 52c that is subjected to quadruple exposure is set. As shown in FIG. 6C, the length in the X direction is L12, and the length in the Y direction is L22.
In an area on the + X side of the divided pattern 53, an overlapping portion 53a that is partially overlapped with and exposed to the divided pattern 54 is set, and in an area on the + Y side of the divided pattern 53, a part of the divided pattern 52 is partially Overlapping portion 53 that is overlapped and exposed
b is set, and in the area where the overlapping portions 53a and 53b intersect, the overlapping portion 53c to be exposed four times is set. And
As shown in FIG. 6D, the region on the −X side of the divided pattern 54 whose length in the X direction is L11 and whose length in the Y direction is L22 is exposed so as to partially overlap the divided pattern 53. An overlapping portion 54a is set, and in the region on the + Y side of the divided pattern 54, an overlapping portion 54b that is partially overlapped with and exposed to the divided pattern 51 is set, and the overlapping portions 54a and 54b are set.
Are overlapped with each other, an overlapping portion 54c to be exposed four times is set.

The width L23 of the overlapping portions 51b to 54b
Are the projection areas (illumination areas) 34a to 34e shown in FIG.
Of the triangular ends 35a to 35h, 35j and 35k of
It is set to be the same as the width in the direction. Further, the overlapping portions 51a to 51a
The width L13 of 4a is set to be the same as the width in the X direction of each of the projection areas 34a to 34e.

As shown in FIG. 7, the division pattern 51 to 54 is formed in the mask M by partially setting the illumination area by using the characteristic that the pixel pattern and the peripheral circuit pattern are constituted by a repetitive pattern. A pattern MP to be cut out is formed. That is, the divided pattern 51 is selected by cutting out the pattern MP with the length of L11 in the X direction and L21 in the Y direction, and the divided pattern 52 is selected by cutting out the length of L12 in the X direction and L21 in the Y direction. You. Similarly, the pattern MP is changed to L12 in the X direction,
By cutting out the length of L22 in the Y direction, the divided pattern 5
3 is selected, and the divided pattern 54 is selected by cutting out the length L11 in the X direction and L22 in the Y direction.

Around the pattern MP of the mask M, Cr
Is formed. Shading belt 55
When the divided patterns 51 to 54 are scanned and exposed, the projection areas on the side facing the overlapping portions 51a to 54a and 51b to 54b are shielded from light, so that the overlapping portions 51a to 54a,
An edge is formed on the divided pattern on the side facing 1b to 54b.

Above the mask M, a mask alignment mark (not shown) formed on the mask M and a glass substrate P
Are provided with alignment systems 49a and 49b for detecting a substrate alignment mark (not shown) formed on the substrate. The alignment systems 49a and 49b irradiate the mask alignment mark with detection light, and reflect the reflected light of the mask alignment mark and the reflected light of the substrate alignment mark obtained via the mask alignment mark and the outer projection system module 3a or 3e. By receiving light,
The configuration is such that the amount of displacement between the mask M and the glass substrate P is measured. Note that, as shown in FIG. 2, the measurement results of the alignment systems 49a and 49b are output to the control device 17. Each of the alignment systems 49a and 49b has a drive mechanism (not shown) that moves in the X direction, and is configured to be able to retreat from the illumination area during scanning exposure.

The procedure for connecting the divided patterns 51 to 54 on the glass substrate P and exposing the LCD pattern LP on the screen by the scanning type exposure apparatus 1 having the above configuration will be described. Here, a description will be given assuming that scanning exposure is performed in the order of the divided patterns 51, 52, 53, and 54. In the following, the movement of the mask stage 4 and the substrate stage 5 and the driving of the illumination shutter 12 in each of the illumination system modules 10a to 10e are performed via the mask stage driving unit 37, the substrate stage driving unit 40, and the shutter driving unit 16. It is assumed that each drive is performed based on the control of the control device 17 that controls each drive unit.

First, the mask alignment marks and the substrate alignment marks are measured by the alignment systems 49a and 49b to determine the amount of displacement between the mask M and the glass substrate P, and the mask stage 4 or the substrate stage 5 is finely moved from the result. And the projection system modules 3a to 3e with respect to the mask M and the glass substrate P.
The relative shift, rotation, and scaling correction amounts are calculated for each of the projection system modules 3a to 3 based on the correction amounts.
The correction of the image shift mechanism 23, the magnification adjustment mechanism 27, and the right-angle prisms 28 and 31 for rotating the image is performed.

Next, the mask stage 4 and the substrate stage 5 are driven to move the mask M and the glass to the scanning start position of the division pattern 51 (the position where the exposure area of the division pattern 51 is on the + X side of the projection areas 34a to 34e). The substrate P is moved. Here, the scanning direction of the mask M and the glass substrate P is the -X direction. At this time, as shown in FIG. 5, the mask stage 4 and the substrate stage 5 are driven such that the lower end 35k of the projection area 34e coincides with the position of the overlapping portion 51b in the Y direction. Further, as shown in FIG. 8A, the projection areas 34a to 34e
2 is shielded by blocking the optical path of the light beam.

When the scanning is started, the mask M and the glass substrate P move synchronously at a constant speed in the -X direction. And
As shown in FIG. 8B, when the exposure area of the overlapping portion 51a is positioned at the projection areas 34b and 34d, the projection area 3
In the illumination system modules 3b and 3d corresponding to 4b and 34d, the illumination shutter 12 is driven to open the optical path of the light beam. Thus, the exposure of the divided pattern 51 located in the projection areas 34b and 34d is started. The driving timing of the illumination shutter 12 is controlled by the laser interferometers 39a,
The measurement is performed based on the position measurement results of the mask stage 4 and the substrate stage 5 by 9b and 43a and 43b (the same applies hereinafter).

As the synchronous movement progresses, as shown in FIG. 8C, the exposure area of the overlapping portion 51a is changed to the projection areas 34b and 34.
When it is located in the projection areas 34a, 34c, 34e following d, the illumination shutter 12 is also driven in the illumination system modules 3a, 3c, 3e corresponding to the projection areas 34a, 34c, 34e to open the optical path of the light flux. This allows
Exposure of the divided patterns 51 located in the projection areas 34a, 34c, and 34e is also started, and exposure is performed in all the projection areas 34a to 34e as shown in FIG.
Then, when the projection areas 34a to 34e deviate from the exposure area of the divided pattern 51, as shown in FIG. 8E, the illumination shutter 12 of the projection areas 34a to 34e is closed, and the mask M and the glass substrate P Stop synchronous movement of. The edge on the + X side of the division pattern 51 is formed by the light shielding band 55 of the mask M.

Subsequently, in order to expose the divided pattern 52, first, the mask stage 4 and the substrate stage 5 are set to +
By driving in the X direction, the scanning start position of the divided pattern 52 (the exposure area of the divided pattern 52 is
e on the + X side) mask M and glass substrate P
To move. Next, the mask M and the glass substrate P are separated by -X.
And the projection areas 34a-3
The illumination shutter 12 is opened before 4e reaches the exposure area of the divided pattern 52. Thus, as shown in FIG. 9A, the divided patterns 52 located in the projection regions 34a to 34e are sequentially exposed. Note that -X of the divided pattern 52
The side edge is also formed by the light shielding band 55 of the mask M.

The scanning exposure proceeds, and as shown in FIG. 9B, the exposure area of the overlapping portion 52a is changed to the projection areas 34b and 34d.
, The illumination shutter 12 corresponding to the projection areas 34b and 34d is closed to block the light beam. Thereafter, as shown in FIG. 9C, the projection areas 34a and 34a
Scanning exposure is performed with the illumination shutter 12 corresponding to c and 34e open. Then, as shown in FIG. 9D, the exposure areas of the overlapping portion 52a are projected areas 34a, 34c, 34e.
, The illumination shutters 12 corresponding to the projection areas 34a, 34c, 34e are also closed. After this, FIG.
As shown in (e), when the projection areas 34a to 34e deviate from the exposure area of the divided pattern 52, the synchronous movement between the mask M and the glass substrate P is stopped.
Is completed.

Next, to expose the divided pattern 53,
The mask stage 4 is driven in the + X direction and the substrate stage 5 is driven in the + X direction and the + Y direction to start the scanning of the divided pattern 53 (the exposure area of the divided pattern 53 is located on the + X side of the projection areas 34a to 34e). The mask M and the glass substrate P are moved to (position). At this time,
As shown in FIG. 5, the mask stage 4 and the substrate stage 5 are driven such that the upper end 35j of the projection area 34a is located at the overlapping portion 53b. Then, the mask M and the glass substrate P are synchronously moved in the −X direction, and the illumination shutter 12 is driven in the same procedure as the divided pattern 52 to expose the divided pattern 53.

Similarly, to expose the divided pattern 54, first, the mask stage 4 and the substrate stage 5
By driving in the X direction, the scanning start position of the divided pattern 54 (the exposure area of the divided pattern 54
e on the + X side) mask M and glass substrate P
To move. Then, the mask M and the glass substrate P are
The shutter is moved in the X direction, and the illumination shutter 12 is driven in the same procedure as the division pattern 51 to expose the division pattern 54. That is, the mask stage 4 and the substrate stage 5
Exposure is performed by driving the illumination shutter 12 in conjunction with the driving of. By the above scanning exposure, the glass substrate P
The upper divided pattern 51 to 54 overlaps the overlapping portions 51a to 54a and 51b to 54b with the adjacent divided patterns to form an LCD pattern LP that is screen-synthesized.

Subsequently, the exposure amount distribution in the divided patterns 51 to 54 exposed as described above is verified. Here, it is assumed that the overlapping portion is normalized such that it falls within a range of 0 ≦ x ≦ 1 and 0 ≦ y ≦ 1. Further, the exposure amount in this range is denoted by z, and the exposure amount in the non-overlapping portion is 1.

First, in the division patterns 51 to 54, 4
A description will be given of the exposure amount distribution of the overlapped portions 51c to 54c that are subjected to multiple exposure. When the divided pattern 51 is exposed, the overlapping portion 51
Exposure c is exposed at the end 35k of the projection area 34e. At this time, the exposure amount distribution becomes a quadrangular pyramid as shown in FIG. 10A, and is represented by a function of the following equation. When y ≧ x, z = x When y <x, z = y (1)

The overlapping portion 52 c
Is exposed at the end 35k of the projection area 34e at the time of the exposure, the exposure amount distribution at this time becomes a triangular pyramid as shown in FIG. 10B and is represented by a function of the following equation. When y ≧ x, z = −x + y When y <x, z = 0 (2)

Then, the overlapping portion 53 c
At the time of exposure 3, the exposure is performed at the end 35j of the projection area 34a, and the exposure amount distribution at this time becomes a triangular pyramid as shown in FIG. 10C and is represented by a function of the following equation. When y ≧ 1-x, z = 0 When y <1-x, z = 1−xy (3)

The overlapping portion 54c is formed by the divided pattern 54
Is exposed at the end 35j of the projection area 34a at the time of the exposure, the exposure amount distribution at this time becomes a quadrangular pyramid as shown in FIG. 10D, and is represented by a function of the following equation. When y ≧ 1-x, z = 1−y When y <1-x, z = x (4)

Then, the sum of the above functions (1) to (4) becomes the exposure distribution after the quadruple exposure, and z = 1. That is, the total exposure amount of the exposure area on the glass substrate P subjected to the quadruple exposure is the same as that of the non-overlapping portion. That is, regardless of the physical structure and the driving method, the exposure amount portion represented by the functions (1) to (4) is formed to make the exposure amount portion of the quadruple exposure portion the same as the non-overlapping portion. Can be.

Next, overlapping portions 51a to 54a in which the divided patterns 51 and 52 and 53 and 54 which are adjacent in the X direction which is the scanning direction overlap will be described. The overlapping part 5
Since 3a and 54a have the same exposure amount distribution as the overlapping portions 51a and 52a, the overlapping portions 51a and 52a will be described here. Also, here, as shown in FIG. 11, among the end portions 35 a to 35 d of the projection regions 34 a to 34 c,
Rectangular overlapping portions 51e, 52e exposed at 5a, 35b
And a rectangular overlapping portion 51 exposed at the ends 35c and 35d.
The exposure amount distributions of f and 52f will be described.

First, the overlapping portion 51e in the overlapping portion 51a
When exposing the divided pattern 51, the end 3 of the projection area 34a
5a, the light is exposed with a quadrangular pyramid-shaped exposure amount distribution shown in FIG.
Exposure is performed by 5b with a triangular pyramid exposure distribution shown in FIG. Here, the exposure amount distribution exposed at the end 35a is represented by the function (1), and the exposure amount distribution exposed at the end 35b is represented by the following function. When y ≧ x, z = 0 When y <x, z = xy (5)

Accordingly, when the divided pattern 51 is exposed, the exposure amount distribution of the overlapping portion 51e exposed at the end portions 35a and 35b has the functions (1) and (5) as shown in FIG.
Is a function of z = x which is the sum of

Similarly, the overlapping portion 51f is assigned to the divided pattern 5
At the time of exposure 1, exposure is performed by the end portion 35d of the projection region 34c with an exposure amount distribution of a quadrangular pyramid shape shown in FIG. 12C, and the triangular pyramid shown in FIG. Exposure is performed with an exposure distribution of a shape. Here, the exposure amount distribution exposed at the end 35d is represented by the above function (4), and the exposure amount distribution exposed at the end 35c is represented by the following function. When y≥1-x, z = x + y-1 When y <1-x, z = 0 (6)

Accordingly, when the divided pattern 51 is exposed, the exposure amount distribution of the overlapping portion 51f exposed at the end portions 35d and 35c also has the functions (4) and (6) as shown in FIG.
Is a function of z = x which is the sum of

On the other hand, the overlapping portion exposed in the rectangular portion excluding the end portion in each projection area is, for example, as shown in FIG.
As shown in the figure, among the overlapping portions 51a, the overlapping portions 51e, 51
The overlapping portion 51g sandwiched by f is exposed by the rectangular central portion 41 of the projection area 34b with an exposure amount distribution of z = x shown in FIG. This is because the other projection areas 34a, 3
The same applies to the overlapping portion exposed by the rectangular portions 4c to 34e. As a result, as shown in FIG. 14A, the overlapping portion 51a in the divided pattern 51 is exposed with an exposure amount distribution having a smooth inclination represented by a function of z = x.

Next, the overlapping portion 52e in the overlapping portion 52a
When exposing the divided pattern 52, the end 3 of the projection area 34a
5a, the exposure is performed with a triangular pyramid-shaped exposure amount distribution shown in FIG.
Exposure is performed by 5b with a quadrangular pyramid exposure distribution shown in FIG. Here, the exposure amount distribution exposed at the end 35a is expressed by the above function (2), and the exposure amount distribution exposed at the end 35b is expressed by the following function. When y ≧ x, z = 1−y When y <x, z = 0 (7)

Therefore, when the divided pattern 52 is exposed, the exposure amount distribution of the overlapped portion 52e exposed at the ends 35a and 35b has the functions (2) and (7) as shown in FIG.
Are represented by a function of z = 1−x which is the sum of

Similarly, the overlapping portion 52f is provided with the divided pattern 5
At the time of the exposure 2, the exposure is performed by the end portion 35d of the projection region 34c with the triangular pyramid-shaped exposure amount distribution shown in FIG. 15C, and the quadrangular pyramid shown in FIG. Exposure is performed with an exposure distribution of a shape. Here, the exposure amount distribution exposed at the end 35d is represented by the above function (3), and the exposure amount distribution exposed at the end 35c is represented by the following function. When y ≧ 1-x, z = 1−x When y <1-x, z = y (8)

Therefore, when the divided pattern 52 is exposed, the exposure amount distribution of the overlapped portion 52f exposed at the ends 35d and 35c has the functions (3) and (8) as shown in FIG.
Are represented by a function of z = 1−x which is the sum of Also, of the overlapping portion 52a, the overlapping portion 52g sandwiched between the overlapping portions 52e and 52f shown in FIG.
Exposure is performed with an exposure distribution of z = 1−x shown in FIG. The same applies to the overlapping portions exposed in the rectangular portions of the other projection regions 34a and 34c to 34e. As a result, the overlapping portion 52a in the divided pattern 52 is
As shown in (b), exposure is performed with an exposure amount distribution having a smooth slope represented by z = 1−x.

As described above, by exposing the divided patterns 51 and 52 adjacent to each other in the synchronous movement direction, the total exposure amount in the exposure area of the overlapping portions 51a and 52a becomes z = 1, which is the same as the non-overlapping portion. . This is divided pattern 5
The same applies to 53a and 54a where 3, 54 overlap each other.

Next, the overlapping portions 51b to 54b where the divided patterns 51 and 54 and 52 and 53 overlap in the Y direction which is the non-scanning direction will be described. In this case, the overlapping portions 51b and 52b are connected to the end 3 of the projection area 34e.
Exposure is performed at 5k, but since the end 35k is gradually reduced in diameter in the −Y direction, z = z as shown in FIG.
Exposure is performed with an exposure distribution represented by a function of y. Similarly,
The overlapping portions 53b and 54b are connected to the end 35j of the projection area 34a.
However, since the end 35j is gradually reduced in diameter in the + Y direction, as shown in FIG.
Exposure is performed with an exposure distribution represented by a function of y.

From the above, the division patterns 51 to 54
By exposing the overlapping portions 51b, 54b, and 52b
The total exposure amount of the exposure region in which and
It becomes 1. Therefore, even if the divided patterns 51 to 54 are partially overlapped in the X direction and the Y direction and connected, z = 1
Exposure can be performed with a uniform exposure amount distribution.

As described above, in the scanning exposure method and the scanning exposure apparatus of the present embodiment, the divided patterns are partially overlapped with a smooth exposure amount distribution even in the synchronous movement direction of the mask M and the glass substrate P. Therefore, it is possible to smoothly connect these divided patterns, and it is possible to easily cope with an increase in the area of the liquid crystal display panel without deteriorating the quality. In particular, in the present embodiment, since the projection optical system 3 is composed of a plurality of projection system modules 3a to 3e whose projection areas overlap in the Y direction,
Even in the non-scanning direction, a longer liquid crystal display panel can be manufactured, and a panel with a larger area can be obtained. Further, in the present embodiment, since the exposure amount in the overlapping portion of these divided patterns is controlled by a simple operation of switching between exposure light irradiation and light shielding, it is possible to prevent an increase in size and cost of the apparatus. it can.

FIGS. 16 and 17 show a second embodiment of the scanning exposure method and the scanning exposure apparatus of the present invention. In this figure, the first one shown in FIGS.
The same reference numerals are given to the same components as those of the embodiment, and the description is omitted. The difference between the second embodiment and the first embodiment is that the illumination shutter 1
The drive timing of No. 2 was measured not by the position measurement result of the mask stage 4 and the substrate stage 5 but by detecting a joining mark, and the exposure order of the divided patterns 51 to 54 was optimized. That is.

As shown in FIG. 16, the light shielding zone 5 of the mask M
5, the center of both side edges along the X direction (that is,
Alignment marks 56a and 56b located near (the center of both ends in the Y direction of the mask M) and alignment marks 57a linearly arranged on the both side edges along the X direction.
To 60a and 57b to 60b are respectively formed. The alignment marks 56a and 56b are used for pre-alignment of the mask M, and the alignment marks 57a to 60a and 57b to 60b are used for calculating various correction amounts at the time of alignment of the mask M. It is formed in a cross shape by the above method.

The alignment marks 57a-60
a, 57b to 60b are also used as indices for switching between irradiation and light blocking of the light beam by the illumination shutter 12 when the overlapping portions 51a to 54a of the divided patterns 51 to 54 are located in the projection regions 34a to 34e. Specifically, among the projection areas 34a to 34e, three projection areas 3 arranged in the Y direction
4a, 34c, 34e are projected area group 34m, 2 in the Y direction.
Assuming that the projection areas 34b and 34d in which a plurality of projection areas 34b and 34d are arranged as a projection area group 34n,
When scanning exposure is performed, the overlapping portion 51a
Is formed at a position detected by the alignment system 49a when it is positioned at
It is formed at a position detected by the alignment system 49a when a is located in the projection area group 34m. Further, these alignment marks 57a and 58b are formed by the divided pattern 51 exposed when each alignment mark is detected.
Are arranged in the vicinity.

Similarly, when the divided pattern 52 is scanned and exposed, the alignment mark 59a is aligned with the alignment system 49a when the overlapping portion 52a is positioned in the projection area group 34n.
The alignment mark 60 is formed at the position detected by
a is formed at a position detected by the alignment system 49a when the overlapping portion 52a is positioned in the projection area group 34m.
Further, the alignment mark 57b is
When scanning exposure is performed, the overlapping portion 54a
Is formed at the position detected by the alignment system 49b when it is positioned at
4a is formed at a position detected by the alignment system 49b when located in the projection area group 34m. Further, when the divided pattern 53 is scanned and exposed, the alignment mark 59b is formed at a position detected by the alignment system 49b when the overlapping portion 53a is positioned in the projection area group 34n, and the alignment mark 60b is formed at the overlapping portion 53a. Is formed at a position detected by the alignment system 49b when located in the projection area group 34m.

Then, the alignment marks 59a, 60
a, 57b to 60b are also arranged in the vicinity of the divided pattern exposed when each alignment mark is detected.

When performing scanning exposure using this mask M, first, alignment marks 56a and 56b are measured by alignment systems 49a and 49b, respectively, and pre-alignment is performed.
a, 57b to 60b are measured, and various correction amounts for correcting the imaging characteristics are calculated. Then, after adjusting the imaging characteristics of the projection system modules 3a to 3e based on this correction amount, the divided pattern 51 is scanned and exposed.

Here, first, as shown in FIG. 17A, the exposure area of the divided pattern 51 is set to the projection area group 34m,
The mask stage 4 and the substrate stage 5 are driven from the scanning start position on the + X side of 34n, and the mask M and the glass substrate P are synchronously moved in the -X direction. At this time, the light path of the light beam is shielded by the illumination shutter 12. When the alignment system 49a detects the alignment mark 57a during the synchronous movement, that is, when the overlapping portion 51a is positioned in the projection region group 34n, the projection region group 34n
Is opened to open the optical path of the light beam.

When the synchronous movement proceeds and the alignment system 49a detects the alignment mark 58a, that is, when the overlapping portion 51a is positioned in the projection area group 34m, the illumination shutter 12 corresponding to the projection area group 34m is opened immediately. To open the optical path of the luminous flux. Then, as shown in FIG. 17B, the exposure area of the divided pattern 51 reaches the -X side of the projection area groups 34m and 34n, and the exposure of the divided pattern 51 is completed.

Subsequently, in order to expose the divided pattern 54, the mask M and the glass substrate P are step-moved in the + Y direction (however, while the glass substrate P moves by a length L22, the mask M is shown in FIG. 16). Only the length L24 shown in FIG. As a result, as shown in FIG.
The exposure area of the divided pattern 54 is the projection area group 34m, 34
n is located on the −X side. Then, the mask M and the glass substrate P are synchronously moved in the + X direction while the light path of the light beam is shielded by the illumination shutter 12, and before the divided pattern 54 reaches each of the projection region groups 34m and 34n, the projection region groups 34m and 34n The illumination shutter 12 corresponding to 34n is opened to open the optical path of the light beam. Alignment system 4 during synchronous movement
As soon as 9b detects the alignment mark 58b, it closes the illumination shutter 12 corresponding to the projection area group 34m and blocks the optical path of the light beam.

Further, when the synchronous movement proceeds and the alignment system 49b detects the alignment mark 57b,
Immediately, the illumination shutter 1 corresponding to the projection area group 34n
2 is closed to block the light path of the light beam. And FIG.
As shown in (d), the exposure area of the divided pattern 54 reaches the + X side from the projection area groups 34m and 34n, and the exposure of the divided pattern 54 is completed.

Subsequently, when exposing the divided pattern 53, the mask M and the glass substrate P are temporarily fed in the −X direction, and the exposed area of the divided pattern 53 is projected to the projection area as shown in FIG. It is positioned on the −X side of the groups 34m and 34n (however, as in the case described above, the idle feeding amounts of the mask M and the glass substrate P are different). At this time, the optical path of the light beam is in a light-shielded state. Then, the mask M and the glass substrate P are synchronously moved in the + X direction. As described above, as soon as the alignment system 49b detects the alignment mark 60b and the overlapping portion 53a is positioned in the projection area group 34m, this projection area group Open the illumination shutter 12 corresponding to 34 m,
When the alignment system 49b detects the alignment mark 59b and the overlapping portion 53a is located in the projection area group 34n,
Immediately, the illumination shutter 1 corresponding to the projection area group 34n
Open 2 to open each optical path. As a result, the divided patterns 53 are sequentially transferred onto the glass substrate P, and FIG.
As shown in the figure, the exposure area of the divided pattern 53 reaches the + X side of the projection area groups 34m and 34n, and
Is completed.

Next, in order to expose the divided pattern 52, the mask M has a length L24 and the glass substrate P has a length L2.
1. Step movement is performed in the -Y direction. Thus, as shown in FIG. 17G, the exposure area of the divided pattern 52 is located on the + X side of the projection area groups 34m and 34n. Then, the mask M and the glass substrate P are synchronously moved in the −X direction in a state where the optical path of the light beam is shielded by the illumination shutter 12, and the divided pattern 52 is set to each projection area group 34 m,
Before the light reaches 34n, the illumination shutters 12 corresponding to the projection area groups 34m and 34n are opened to open the optical path of the light flux. As soon as the alignment system 49a detects the alignment mark 59a during the synchronous movement, the projection area group 34n
Is closed, and the alignment system 4 is closed.
As soon as 9a detects the alignment mark 60a, it closes the illumination shutter 12 corresponding to the projection area group 34m and blocks each optical path. As a result, the divided pattern 52 is transferred onto the glass substrate P, and the LCD pattern LP is synthesized.

In the scanning exposure method and the scanning type exposure apparatus of the present embodiment, the same effects as those of the first embodiment can be obtained. Mask M and glass substrate P at start position
Since the idle feeding is smaller than that in the first embodiment, the moving distance of the mask M and the glass substrate P from the scanning exposure end position of the previous divided pattern to the exposure start position of the subsequent divided pattern is smaller. Shorter and higher throughput. In the present embodiment, the alignment marks 57a to 57a formed simultaneously with the division pattern of the mask M are used.
a, 57b-60b, the illumination shutter 1
2, the light-shielding / irradiation of the light beam to the projection area groups 34m and 34n is switched, so that the drive timing of the illumination shutter 12 can be more accurately compared to the case where the positions of the mask stage 4 and the substrate stage 5 are detected. it can.

In the above embodiment, the joint mark and the alignment mark for correcting the image forming characteristic are used in combination. However, the present invention is not limited to this. You may. Also, the description has been given of the case where the position of the overlapping portion of the divided pattern is detected by using an alignment mark or the like and exposed, but the laser interference systems 39 and 43 determine the position of each stage and the position of the mask and the substrate with respect to the stage. , Exposure start and end may be controlled.

In the first embodiment, the synchronous movement directions are all the same. However, as in the second embodiment,
Only the divided patterns 51, 52 and 53, 54 adjacent to each other in the synchronous movement direction may be in the same direction, or the synchronous movement direction may be individually set for each divided pattern. In any case, when the overlapping portion of the adjacent divided patterns in the synchronous movement direction is arranged on the front side in the synchronous movement direction of the divided pattern, the exposure light is released when the overlapping portion is located in the projection area, and the overlapping light is released. When the portion is arranged on the rear side in the synchronous movement direction of the divided pattern, if the overlapping portion is located in the projection area and the exposure light is shielded, the first embodiment does not depend on the synchronous movement direction. As described, overlapping portions 51a to 54a, 51b to 54b, 51c to 54c,
Since the exposure amount distribution of the non-overlapping portion becomes the same, the synchronous movement direction may be set according to the optimized exposure order, such as selecting the exposure order in which the moving distance of the mask M and the glass substrate P is the shortest. .

Further, in the above embodiment, the overlapping portion 51
b to 54b and overlapping portions 51c to 54c
Although the overlap exposure is performed at the end 35k of the edge e and the end 35j of the projection area 34a, the projection area used for the overlap exposure may be appropriately changed according to the length of the LCD pattern LP in the Y direction. For example, the overlapping portions 51b, 52b, 51c, 52
The exposure may be performed at the end 35k of the projection area 34e with respect to c, and the exposure may be performed at the end 35b of the projection area 34b with respect to the overlapping portions 53b, 54b, 53c, and 54c. In this case, when exposing the overlapping portions 53b, 54b, 53c, and 54c,
The illumination shutter 12 corresponding to the projection area 34a may be closed during exposure. The same applies to the case where overlapping exposure is performed at the end 35g and the end 35j. As described above, regarding the exposure of the overlapping portion between the divided patterns adjacent to each other in the Y direction, the exposure amount distribution of the overlapping portion and the non-overlapping portion can be made the same without depending on the end shape of the projection region. It is. Further, as described above, even in this case, the synchronous movement direction is not limited, and can be set individually for each division pattern.

In the above embodiment, the projection optical system 3
Is composed of a plurality of projection system modules 3a to 3e, and a plurality of projection regions 34a to 34e are arranged in parallel. However, the present invention is not limited to this, and has a single projection region 34f as shown in FIG. A projection optical system may be used.
In this case, the width of the projection region 34f is
The length L13 is set to be the same as the width a. The width in the Y direction of the end portions 35m and 35n of the projection area 34f is set to the same length L23 as the width of the overlapping portions 51b to 54b.

In the above embodiment, the width of the projection area in the synchronous movement direction is different from that of the overlapping portions 51a to 54a and 51c to 5c.
4c substantially coincides with the width L13 in the X direction,
By making the size of the projection area variable with respect to the field stop 26, the width of the overlapping portions 51a to 54a and 51c to 54c can be set arbitrarily. In this case, since the size of the projection area changes, the positions of the ends 35a to 35h in the projection areas 34a to 34e adjacent in the Y direction do not match,
If the projection system modules 3a to 3e are moved according to the change of the projection area, or the position of each of the projection areas 34a to 34e is shifted in the Y direction (and in the X direction in some cases) by adjusting the image shift mechanism 23. Good.

Further, as shown in FIG. 19, when changing the size of the projection area, in each of the projection areas 3a to 3e, for example, the side on the + X side (the projection area group 34m is a short side, the projection area group 34n is If the long sides are moved by the length L14 in the same direction, the positions in the Y direction of the ends 35a to 35h adjacent in the Y direction coincide with each other, so that it is not necessary to shift the positions of the projection areas 34a to 34e. . Therefore, the overlapping part 5
The width of 1a to 54a and 51c to 54c is L13 + L14, and can be set to any value. This means that the side on the + X side is-
The same applies to the case of moving in the X direction and the case of moving the side on the −X side.

In the above embodiment, the LCD pattern LP is synthesized on the glass substrate P by screen scanning by four times of scanning exposure. However, the present invention is not limited to this configuration. A configuration in which screens are combined on the glass substrate P or screens are combined by five or more scanning exposures may be employed. Further, instead of providing one light source 6, one light source 6 may be provided for each optical path, a plurality of light sources may be provided, and light from a plurality of light sources (or one light source) may be combined into one using a light guide or the like. A configuration in which light is branched every time may be adopted. In this case, it is possible to eliminate the adverse effect due to the variation in the light amount of the light source, and even if one of the light sources disappears, only the entire light amount decreases, and it is possible to prevent the exposed device from becoming unusable.

The light path through the projection system modules 3a to 3e is shielded by the illumination shutter 12. However, the present invention is not limited to this. When light is shielded, a configuration may be employed in which an impenetrable portion is positioned in the optical path.

The substrate of the present embodiment is not limited to a glass substrate P for a liquid crystal display device, but also a semiconductor wafer for a semiconductor device, a ceramic wafer for a thin film magnetic head, or a mask or a mask used in an exposure apparatus. An original reticle (synthetic quartz, silicon wafer) or the like is applied.

The type of the scanning type exposure apparatus 1 is not limited to an exposure apparatus for manufacturing a liquid crystal display device for exposing a liquid crystal display device pattern on a glass substrate P, but may be an exposure apparatus for manufacturing a semiconductor device for exposing a semiconductor device pattern to a wafer. The present invention can be widely applied to an apparatus, an exposure apparatus for manufacturing a thin film magnetic head, an imaging device (CCD), a reticle, and the like.

Further, as the light source 6, a bright line (g-line (436 nm) and an h-line (404.
7 nm), i-line (365 nm)), KrF excimer laser (248 nm), ArF excimer laser (193n)
m), an F ₂ laser (157 nm) can be used.

The magnification of the projection system modules 3a to 3e may be not only the same magnification system but also any of a reduction system and an enlargement system.
As the projection system modules 3 a to 3 e, a material which transmits far ultraviolet rays such as quartz and fluorite as the glass material when using a far ultraviolet rays such as an excimer laser, when using the F ₂ laser or X-ray catadioptric A system or a refraction type optical system (a reflection type mask is used as the mask M) may be used. Further, the mask M and the glass substrate P are brought into close contact with each other without using the projection system modules 3a to 3e.
Is also applicable to a proximity exposure apparatus that exposes the pattern of (1).

When a linear motor (see US Pat. No. 5,623,853 or US Pat. No. 5,528,118) is used for the substrate stage 5 and the mask stage 4, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force is used. May be used. Also, each stage 4, 5
A type that moves along a guide or a guideless type that does not have a guide may be used.

As the driving mechanisms 37 and 40 of the stages 4 and 5, a magnet unit (permanent magnet) having a two-dimensionally arranged magnet and an armature unit having a two-dimensionally arranged coil are opposed to each other by electromagnetic force. A planar motor for driving the stages 4 and 5 may be used. In this case, one of the magnet unit and the armature unit may be connected to the stages 4 and 5, and the other of the magnet unit and the armature unit may be provided on the moving surface side (base) of each of the stages 4 and 5. .

The reaction force generated by the movement of the substrate stage 5 is disclosed in Japanese Patent Laid-Open No.
As described in US Pat. No. 6,475, US Pat. No. 5,528,118, a frame member may be used to mechanically escape to the floor (ground). The present invention is also applicable to an exposure apparatus having such a structure. The reaction force generated by the movement of the mask stage 4 is not transmitted to the projection optical system 3,
JP-A-8-330224 (US S / N 08 / 416,558)
As described in the above, a frame member may be used to mechanically escape to the floor (ground). The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the scanning exposure apparatus 1, which is the substrate processing apparatus according to the embodiment of the present invention, performs various kinds of subsystems including the components described in the claims of the present application with predetermined mechanical accuracy and electrical characteristics. It is manufactured by assembling so as to maintain the target precision and optical precision. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electric systems to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

As shown in FIG. 20, for a device such as a liquid crystal display device or a semiconductor device, a step 201 for designing the function and performance of the liquid crystal display device and the like, and a step for manufacturing a mask M (reticle) based on this design step. 202, a step 203 of manufacturing a glass substrate P from quartz or the like or a wafer from a silicon material, a step 20 of exposing the pattern of the mask M to the glass substrate P (or wafer) by the scanning exposure apparatus 1 of the above-described embodiment.
4. It is manufactured through a step of assembling a liquid crystal display device (including a dicing step, a bonding step, and a packaging step in the case of a wafer) 205, an inspection step 206, and the like.

[0100]

As described above, the scanning exposure method according to the first aspect has a procedure in which divided patterns adjacent in the synchronous movement direction partially overlap each other. As a result, in this scanning exposure method, it is possible to smoothly connect these divided patterns, and it is possible to easily cope with an increase in the area of the liquid crystal display panel without deteriorating the quality.

The scanning exposure method according to the second aspect is a procedure in which the irradiation of the exposure light switches between the irradiation for exposing the substrate to the divided pattern of the mask and the non-exposed light shielding at the overlapping portion between the divided patterns. Thus, in this scanning exposure method, by switching between the irradiation of the exposure light and the shielding in the overlapping portion, the exposure amount distribution of the overlapping portion and the non-overlapping portion becomes the same, and the divided patterns adjacent in the synchronous movement direction are smoothed. The effect of being able to join together is obtained. Further, since the exposure amount distribution is controlled by a simple operation of switching between exposure light irradiation and light shielding, it is possible to prevent an increase in the size and cost of the apparatus.

According to a third aspect of the present invention, in the scanning exposure method, when the overlapping portion is arranged on the front side in the synchronous movement direction of the divided pattern, the exposure light is released when the overlapping portion is located in the irradiation area, and the overlapping portion is divided by the divided pattern. When it is arranged on the rear side in the synchronous movement direction, the exposure light is blocked when the overlapping portion is located in the irradiation area. Thereby, in this scanning exposure method, when the overlapping portion is overlap-exposed, the exposure amount distribution of the overlapping portion and the non-overlapping portion becomes the same, and the divided patterns adjacent in the synchronous movement direction can be smoothly connected. The effect that it can be obtained is obtained.

The scanning exposure method according to the fourth aspect has a configuration in which a plurality of adjacent irradiation regions are arranged in parallel with each other with a part thereof overlapping in a direction orthogonal to the synchronous movement direction. As a result, in this scanning exposure method, it is possible to manufacture a longer liquid crystal display panel even in a direction orthogonal to the synchronous movement direction, and it is possible to obtain a panel having a larger area.

In the scanning exposure method according to the fifth aspect, the synchronous movement directions of the divided patterns adjacent to each other in the synchronous movement direction are the same. As a result, in this scanning exposure method, it is possible to eliminate an error factor that occurs due to a difference in the synchronous movement direction, and it is possible to obtain an effect that highly accurate exposure can be performed.

In the scanning exposure method according to the sixth aspect, after exposing divided patterns adjacent in the synchronous movement direction, the divided patterns adjacent in the direction orthogonal to the synchronous movement direction are partially overlapped with each other. I have. This allows
In this scanning exposure method, the divided patterns can be smoothly joined in both the synchronous movement direction and the direction perpendicular thereto, and an effect that a panel having a larger area can be obtained is obtained.

The scanning exposure method according to claim 7 is a procedure in which a subsequent division pattern is connected to a previous division pattern using a connection mark formed near the division pattern. Thereby, in this scanning exposure method,
Compared with the case where the positions of the mask stage and the substrate stage are detected, the timing of switching between the irradiation and the light shielding of the exposure light can be made more accurate, so that the effect that the joining can be performed with high accuracy can be obtained.

In the scanning exposure method according to the eighth aspect, a procedure for determining the exposure order of the divided patterns based on the moving distance of the mask from the exposure end position of the previous divided pattern to the exposure start position of the subsequent divided pattern. Has become. As a result, in this scanning exposure method, the effect of shortening the exposure time and improving the throughput can be obtained.

According to a ninth aspect of the present invention, in the scanning exposure apparatus, the control device changes the light shielding state of the irradiation area during the synchronous movement so that the divided patterns adjacent in the synchronous movement direction partially overlap each other. The configuration controls the stage, the substrate stage, and the light shielding device. As a result, in this scanning type exposure apparatus, it is possible to smoothly connect the divided patterns, and it is possible to easily cope with an increase in the area of the liquid crystal display panel without deteriorating the quality.

According to a tenth aspect of the present invention, in the scanning type exposure apparatus, a light shielding device is provided for each of the plurality of irradiation regions which are arranged in parallel in a direction orthogonal to the synchronous movement direction. It has a configuration. As a result, in this scanning type exposure apparatus, it is possible to manufacture a longer liquid crystal display panel even in a direction orthogonal to the synchronous movement direction, and it is possible to obtain a panel having a larger area. In addition, it is possible to shield an arbitrary irradiation area in accordance with the length of the panel, thereby obtaining an effect of increasing versatility.

The scanning exposure apparatus according to the eleventh aspect has a configuration in which the overlapping width of the divided patterns substantially coincides with the width of the irradiation area in the synchronous movement direction. Thus, in this scanning type exposure apparatus, by switching between irradiation and light blocking of the exposure light in the irradiation area, the exposure amount distribution of the overlapping portion and the non-overlapping portion becomes the same, and the divided patterns adjacent in the synchronous movement direction are separated. The effect of being able to join smoothly is obtained.

[Brief description of the drawings]

FIG. 1 is a view showing an embodiment of the present invention, and is an external perspective view showing a schematic configuration of a scanning exposure apparatus.

FIG. 2 is a schematic configuration diagram of the scanning exposure apparatus.

FIG. 3 is a schematic configuration diagram of a projection system module constituting the scanning exposure apparatus of the present invention.

FIG. 4 is a view showing an embodiment of the present invention, and is a plan view of a projection area set by a projection system module.

FIG. 5 is a view showing an embodiment of the present invention, and is a plan view showing a relationship between a glass substrate and a projection area.

FIG. 6 is a schematic plan view of each divided pattern synthesized on a glass substrate.

FIG. 7 is a plan view of a mask used for scanning exposure according to the first embodiment of the present invention.

FIGS. 8A and 8B are explanatory diagrams for explaining a procedure of scanning and exposing a divided pattern, wherein FIG. 8A shows a divided pattern at a scanning exposure start position, and FIGS. 8B and 8C show overlapping portions located at a projection area. FIG. 7D is a plan view showing the state in which the exposure light is sometimes irradiated, and FIG.

FIGS. 9A and 9C are explanatory views for explaining a procedure of scanning and exposing a divided pattern, wherein FIGS.
(B) and (d) are plan views in which exposure light is blocked when the overlapping portion is located in the projection area, and (e) is a plan view after scanning exposure is completed.

FIGS. 10A to 10D respectively show overlapping portions 51;
It is a distribution figure which shows the exposure amount distribution of c-54c.

FIG. 11 is a plan view showing a positional relationship between a projection area and an overlapping portion of a divided pattern.

FIGS. 12A to 12D are distribution diagrams each showing an exposure amount distribution of an overlapping portion due to a projection area end;

FIGS. 13A and 13B are distribution diagrams each showing an exposure amount distribution of an overlapping portion exposed from two projection region ends;

FIGS. 14A to 14D are distribution diagrams each showing an exposure amount distribution in an overlapping portion; FIGS.

FIGS. 15A to 15D are distribution diagrams each showing an exposure amount distribution of an overlapping portion due to a projection area end;

FIG. 16 is a plan view of a mask used for scanning exposure according to the second embodiment of the present invention.

FIGS. 17A to 17G are plan views showing the procedure of scanning exposure.

FIG. 18 is a view showing another embodiment of the present invention, and is a plan view showing a positional relationship between a single projection area and a glass substrate.

FIG. 19 is a plan view showing a method of changing the size of the projection area.

FIG. 20 is a flowchart illustrating an example of a manufacturing process of a liquid crystal display device.

[Explanation of symbols]

 M Mask (reticle) P Glass substrate (substrate) 1 Scanning exposure device 4 Mask stage 5 Substrate stage 12 Illumination shutter (light-shielding device) 17 Control device 34a-34e Projection area (irradiation area) 51-54 Division pattern 51a-54a 51c-54c overlapping part

Claims (11)

[Claims] 1. A mask and a substrate are synchronously moved with respect to irradiation of exposure light, a divided pattern of the mask is projected on the substrate, and a plurality of adjacent divided patterns on the substrate are connected and exposed. A scanning exposure method, wherein the divided patterns adjacent in the synchronous movement direction partially overlap each other. 2. The scanning exposure method according to claim 1, wherein the irradiation of the exposure light is performed by exposing the substrate to the divided pattern of the mask at an overlapping portion between the divided patterns adjacent to each other in the synchronous movement direction. A scanning exposure method characterized by switching between light-shielding and non-exposure. 3. The scanning exposure method according to claim 2, wherein, when the overlapping portion is arranged on the front side of the divided pattern in the synchronous movement direction, the overlapping portion emits the light during the synchronous movement with respect to the divided pattern. Releasing the exposure light when located in the area, and when the overlapping portion is disposed on the rear side in the synchronous movement direction of the divided pattern, the overlapping portion is located in the irradiation area during the synchronous movement with respect to the divided pattern. A scanning exposure method, wherein the exposure light is shielded when positioned. 4. The scanning exposure method according to claim 1, wherein a plurality of irradiation areas are arranged in parallel such that adjacent irradiation areas partially overlap each other in a direction orthogonal to the synchronous movement direction. A scanning exposure method. 5. The scanning exposure method according to claim 1, wherein said divided patterns adjacent to each other in said synchronous movement direction have the same synchronous movement direction. . 6. The scanning exposure method according to claim 1, wherein after exposing the divided patterns adjacent to each other in the synchronous movement direction, the mask and the substrate are orthogonal to the synchronous movement direction. A scanning exposure method, wherein the divided patterns are moved in a direction in which the divided patterns are adjacent to each other and partially overlap each other in the orthogonal direction. 7. The scanning exposure method according to claim 1, wherein the mask has a joining mark in the vicinity of the adjacent divided pattern, and the mask is divided using the joining mark. A scanning exposure method comprising joining a subsequent divided pattern to a pattern. 8. The scanning exposure method according to claim 1, wherein the order of exposing the plurality of divided patterns is from an exposure end position of a previous divided pattern to an exposure start position of a subsequent divided pattern. A scanning exposure method, wherein the method is determined based on a moving distance of the mask. 9. A scan in which a mask stage for holding a mask and a substrate stage for holding a substrate are synchronously moved with respect to a region irradiated with exposure light, and a plurality of divided patterns adjacent to each other on the substrate are connected and exposed. A type exposure apparatus, comprising: a light-shielding device that shields / releases the exposure light; and changes a light-shielding state of the irradiation area during the synchronous movement.
A scanning exposure apparatus, comprising: a control device that controls the mask stage, the substrate stage, and the light shielding device so that divided patterns adjacent to each other in the synchronous movement direction partially overlap each other. 10. The scanning exposure apparatus according to claim 9, wherein a plurality of the irradiation regions are arranged in parallel so that adjacent irradiation regions partially overlap each other in a direction orthogonal to the synchronous movement direction. , A scanning exposure apparatus provided for each of the plurality of irradiation areas. 11. The scanning exposure apparatus according to claim 9, wherein an overlap width in the synchronous movement direction in which the adjacent divided patterns partially overlap each other is equal to a width of the irradiation area in the synchronous movement direction. A scanning type exposure apparatus characterized by being substantially coincident.