JP4168665B2 - Exposure method, exposure apparatus, and device manufacturing method - Google Patents

Exposure method, exposure apparatus, and device manufacturing method Download PDF

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Publication number
JP4168665B2
JP4168665B2 JP2002148301A JP2002148301A JP4168665B2 JP 4168665 B2 JP4168665 B2 JP 4168665B2 JP 2002148301 A JP2002148301 A JP 2002148301A JP 2002148301 A JP2002148301 A JP 2002148301A JP 4168665 B2 JP4168665 B2 JP 4168665B2
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substrate
alignment
mask
exposure
direction
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JP2003347184A (en
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圭 奈良
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株式会社ニコン
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Priority claimed from TW092108905A external-priority patent/TWI278722B/en
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Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an exposure method, an exposure apparatus, and a device manufacturing method for exposing a mask pattern onto a substrate while synchronously moving the mask and the substrate.
[0002]
[Prior art]
Liquid crystal display devices and semiconductor devices are manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. An exposure apparatus used in this photolithography process has a substrate stage on which a photosensitive substrate is placed and moved two-dimensionally, and a mask stage on which a mask having a pattern is placed and moved two-dimensionally, and is formed on the mask. The pattern thus formed is transferred to the photosensitive substrate via the projection optical system while sequentially moving the mask stage and the substrate stage. The exposure apparatus includes a batch type exposure apparatus that simultaneously transfers the entire mask pattern onto the photosensitive substrate, and a scanning type exposure that continuously transfers the mask pattern onto the photosensitive substrate while synchronously scanning the mask stage and the substrate stage. Two types of devices are mainly known. Among these, when manufacturing a liquid crystal display device, a scanning exposure apparatus is mainly used because of a demand for a large display area.
[0003]
In a scanning exposure apparatus, a plurality of projection optical systems are arranged so that adjacent projection areas are displaced by a predetermined amount in the scanning direction, and ends (joints) of adjacent projection areas are orthogonal to the scanning direction. There is a so-called multi-lens scanning exposure apparatus (multi-lens scanning exposure apparatus) arranged so as to overlap. A multi-lens scanning exposure apparatus can obtain a large exposure area (pattern formation area) without increasing the size of the apparatus while maintaining good imaging characteristics. The field stop of each projection optical system in the scanning exposure apparatus has a trapezoidal shape, for example, and is set so that the total aperture width of the field stop in the scanning direction is always equal. Therefore, since the joint portions of adjacent projection optical systems are exposed in an overlapping manner, the scanning exposure apparatus has an advantage that the optical aberration and exposure illuminance of the projection optical system change smoothly.
[0004]
FIG. 21 is a diagram showing an example of a conventional multi-lens scan type exposure apparatus.
As shown in FIG. 21, the exposure apparatus EXJ illuminates the mask stage MST supporting the mask M, the substrate stage PST supporting the photosensitive substrate P, and the mask M supported by the mask stage MST with the exposure light EL. The illumination optical system IL and a plurality of projection optical systems PLa to PLg that project an image of the pattern of the mask M illuminated by the exposure light EL onto the photosensitive substrate P supported by the substrate stage PST are provided. The projection optical systems PLa, PLc, PLd, and PLg and the projection optical systems PLb, PLd, and PLf are arranged in a zigzag pattern in two rows, and adjacent projection optical systems (for example, projection optics) among the projection optical systems PLa to PLg. System PLa and PLb, PLb and PLc) are arranged with a predetermined amount of displacement in the X-axis direction. Then, the joint portions of the trapezoidal projection areas corresponding to the projection optical systems Pa to PLg overlap on the photosensitive substrate P.
Above the mask stage MST, alignment optical systems 500A and 500B for aligning the mask M and the photosensitive substrate P are provided. The alignment optical systems 500A and 500B are movable in the Y-axis direction by a drive mechanism (not shown), enter between the illumination optical system IL and the mask M during alignment processing, and retract from the illumination area during scanning exposure. It is supposed to be. The alignment optical systems 500A and 500B detect the mask alignment mark formed on the mask M and also detect the substrate alignment mark formed on the photosensitive substrate P via the projection optical systems PLa and PLg.
[0005]
22 to 24 are diagrams for explaining the alignment processing procedure and the exposure processing procedure using the exposure apparatus EXJ. Here, a case where four devices (pattern formation regions) PA1 to PA4 are formed on the photosensitive substrate P will be described.
As shown in FIG. 22, alignment marks are formed at the four corners of each of the pattern formation areas PA1 to PA4 on the photosensitive substrate P.
First, as shown in FIG. 22A, the exposure apparatus EXJ applies two substrate alignment marks m1 and m2 on the −X side of the first pattern formation area PA1 on the photosensitive substrate P to alignment optical systems 500A and 500B. Is detected via the projection optical systems PLa and PLg. Here, alignment optical systems 500A and 500B simultaneously detect mask alignment marks (not shown in FIG. 22) corresponding to substrate alignment marks m1 and m2. Next, as shown in FIG. 22B, the photosensitive substrate P is moved to the −X side by the substrate stage PST, and the alignment optical systems 500A and 500B are two substrate alignment marks m3 and m4 on the + X side of the pattern formation region PA1. Is detected via the projection optical systems PLa and PLg. At this time, the mask M is also moved by the mask stage MST, and the mask alignment marks corresponding to the substrate alignment marks m3 and m4 of the photosensitive substrate P are detected together with the substrate alignment marks m3 and m4. Next, as shown in FIG. 22C, the photosensitive substrate P is moved to the −X side by the substrate stage PST, and the alignment optical systems 500A and 500B are moved to the substrate alignment mark m1 in the second pattern formation region PA2 of the photosensitive substrate P. , M2 and the corresponding mask alignment mark are detected. Next, as shown in FIG. 22 (d), the photosensitive substrate P moves to the -X side, and the alignment optical systems 500A and 500B cause the substrate alignment marks m3 and m4 in the pattern formation region PA2 and the corresponding mask alignment marks. Is detected.
Next, as shown in FIG. 23A, the photosensitive substrate P is stepped to the −Y side by the substrate stage PST, and the alignment optical systems 500A and 500B are moved to the substrate alignment marks m3 and m4 in the third pattern formation region PA3. And the mask alignment mark corresponding to this is detected. Next, as shown in FIG. 23B, the photosensitive substrate P moves to the + X side, and the alignment optical systems 500A and 500B move the substrate alignment marks m1 and m2 in the pattern formation region PA3 and the corresponding mask alignment marks. To detect. Next, as shown in FIG. 23C, the photosensitive substrate P moves to the + X side, and the alignment optical systems 500A and 500B cause the substrate alignment marks m3 and m4 in the fourth pattern formation region PA4 and the corresponding masks. Detect alignment marks. Next, as shown in FIG. 23 (d), the photosensitive substrate P moves to the + X side, and the alignment optical systems 500A and 500B move the substrate alignment marks m1 and m2 in the pattern formation region PA4 and the corresponding mask alignment marks. To detect.
[0006]
As described above, while the step movement between the mask M and the photosensitive substrate P is repeated, the two alignment optical systems 500A and 500B have the positional information of the respective substrate alignment marks m1 to m4 in the pattern formation regions PA1 to PA4, and The position information of the mask alignment mark is detected. Then, in the exposure apparatus EXJ, based on the detection results of the alignment optical systems 500A and 500B, the positional error between the mask M and the photosensitive substrate P for each pattern formation region, and image characteristics such as shift, rotation, and scaling are obtained. A correction value is calculated from the obtained error information, and exposure processing is performed based on the correction value. When performing the exposure process, first, as shown in FIG. 24A, an exposure process is performed on the pattern formation region PA4 that has been finally subjected to the alignment process. That is, the mask stage MST (not shown in FIG. 24) supporting the photosensitive substrate P and the mask stage MST (not shown in FIG. 24) supporting the mask M are moved synchronously in the −X direction while illuminating the mask M with exposure light. An exposure process is performed on the pattern formation area PA4 of the substrate P. When the exposure process for the pattern formation area PA4 is completed, the positions of the mask M and the photosensitive substrate P are set in order to perform the scanning exposure process for the pattern formation area PA3 as shown in FIG. That is, the photosensitive substrate P moves in the −X direction, and the mask M (not shown in FIG. 24) moves greatly in the + X direction to return to the initial position. Then, a scanning exposure process is performed on the pattern formation area PA3. When the exposure process for the pattern formation region PA3 is completed, as shown in FIG. 24C, the positions of the mask M and the photosensitive substrate P are set in order to perform the scanning exposure process for the pattern formation region PA1. That is, the photosensitive substrate P moves greatly in the + X direction and also moves in the + Y direction by the substrate stage PST, and the mask M moves greatly to the + X side to return to the initial position. Then, a scanning exposure process is performed on the pattern formation area PA1. When the exposure process for the pattern formation area PA1 is completed, as shown in FIG. 24D, the positions of the mask M and the photosensitive substrate P are set in order to perform the scanning exposure process for the pattern formation area PA2. That is, the photosensitive substrate P moves in the −X direction, and the mask M moves largely in the + X direction to return to the initial position. Then, a scanning exposure process is performed on the pattern formation area PA2. Thus, the exposure process for each of the pattern formation areas PA1 to PA4 is completed.
[0007]
[Problems to be solved by the invention]
However, the above-described conventional exposure apparatus and exposure method have the following problems.
In the conventional method described above, in order to expose the four pattern formation regions (devices) PA1 to PA4, it is necessary to perform the alignment mark detection operation eight times while moving the mask M and the photosensitive substrate P step by step. The alignment process took a long time. If more devices are manufactured from a single photosensitive substrate P, the alignment processing time becomes longer. When the alignment processing time becomes long, the productivity of the entire exposure apparatus decreases.
On the other hand, in order to shorten the alignment processing time, it is conceivable to reduce the number of alignment marks to be detected, and the alignment processing is performed by reducing the number of alignment marks detected in one pattern formation region from the above four to two, for example. However, if the number of alignment marks to be detected is reduced, image characteristics such as scaling, rotation, or orthogonality are not accurately detected, leading to a decrease in alignment accuracy. When the alignment accuracy decreases, the pattern accuracy of the device to be manufactured decreases.
[0008]
The present invention has been made in view of such circumstances, and an object thereof is to provide an exposure method, an exposure apparatus, and a device manufacturing method that reduce the alignment processing time while maintaining accuracy and improve productivity. To do.
[0009]
[Means for Solving the Problems]
  In order to solve the above problems, the exposure method of the present invention comprises a mask (M) and a substrate (P).Firstdirection(X-axis direction)In the exposure method of exposing the pattern of the mask (M) to the substrate (P) while moving in synchronization withIn the second direction (Y-axis direction) intersecting the first directionArranged multiple alignment systems (AL1 to AL6)Of different exposure areas (PA1 to PA3) on the substrateMultiple alignment marks (m1 to m6)ofdetectionThe,The position of the substrate in the third direction (Z-axis direction) orthogonal to the first and second directions is detected by the detection system (60) different from the plurality of alignment systems while moving the substrate in the first direction a plurality of times. In parallel with the movement of the substrate in the first direction, the alignment system and the detection systemBased on detection resultsBy synchronous movement for each exposure area on the substratemaskThis is an exposure method for exposing the pattern.
  The exposure apparatus of the present invention includes a mask (M) and a substrate (P).Firstdirection(X-axis direction)In the exposure apparatus for exposing the pattern of the mask (M) to the substrate (P) while moving in synchronization withArranged in the second direction (Y-axis direction) intersecting the first direction to detect alignment marks on the substrateMultiple alignment systems (AL1 to AL6)And a detection system (60) for detecting the position of the substrate in a third direction (Z-axis direction) orthogonal to the first and second directions, and different exposure regions (PA1 to PA3) on the substrate by a plurality of alignment systems. Control for detecting a plurality of alignment marks (m1 to m6) a plurality of times by moving the substrate in the first direction and performing the position detection of the substrate by the detection system in parallel with the movement of the substrate in the first direction. An exposure apparatus (EX) that exposes a mask pattern by synchronous movement for each exposure region on the substrate based on the detection results of the alignment system and the detection system.
[0010]
  According to the present invention,Detection of a plurality of alignment marks in different exposure areas on the substrate by the plurality of alignment systems is performed a plurality of times by moving the substrate in the first direction, and position detection in the third direction of the substrate by the detection system is performed in the first direction. In parallel with the movement of the substrate to. For this reason, the detection time of the alignment mark can be shortened as compared with the prior art without reducing the number of alignment marks to be detected, and the position of the substrate in the third direction can be detected in parallel with the alignment mark detection operation. Therefore, the time required for the preparatory operation before the exposure of the substrate can be shortened, and the throughput of the exposure process can be improved.
[0011]
The device manufacturing method of the present invention includes a step (204) of exposing a device pattern drawn on a mask (M) to a substrate (P) using the exposure method described above or the exposure apparatus (EX) described above; And a step (204) of developing the exposed substrate (P).
[0012]
  According to the present invention,Because throughput of exposure processing improves, Productivity in device manufacturing can be improved.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
The exposure apparatus of the present invention will be described below with reference to FIGS.
FIG. 1 is a schematic perspective view showing an embodiment of the exposure apparatus of the present invention, and FIG. 2 is a schematic block diagram.
1 and 2, the exposure apparatus EX exposes a mask stage MST for supporting a mask M on which a pattern is formed, a substrate stage PST for supporting a photosensitive substrate P, and a mask M supported by the mask stage MST as exposure light. An illumination optical system IL that illuminates with EL, a projection optical system PL that projects an image of the pattern of the mask M illuminated with exposure light EL onto the photosensitive substrate P supported by the substrate stage PST, and a photosensitive substrate P are provided. And an alignment system AL for detecting the alignment mark. The mask M supported by the mask stage MST and the photosensitive substrate P supported by the substrate stage PST are arranged in a conjugate positional relationship via the projection optical system PL. The illumination optical system IL includes a plurality of illumination system modules IM (IMa to IMg) in the present embodiment. The projection optical system PL also has a plurality of projection optical systems PLa to PLg in the present embodiment, corresponding to the number of illumination system modules IM. Each of the projection optical systems PLa to PLg is arranged corresponding to each of the illumination system modules IMa to IMg. The photosensitive substrate P is obtained by applying a photosensitive agent (photoresist) to a glass plate (glass substrate).
[0014]
Here, the exposure apparatus EX according to the present embodiment is a scanning exposure apparatus that performs scanning exposure by synchronously moving the mask M and the photosensitive substrate P with respect to the exposure light EL. In the following description, the projection optical system PL is used. The Z axis direction is the Z axis direction, the mask M and the photosensitive substrate P are synchronously moved in the X axis direction (first direction, scanning direction), the Z axis direction, and the X axis direction (scanning). The direction orthogonal to the (direction) is defined as the Y-axis direction (second direction, non-scanning direction). The directions around the X axis, the Y axis, and the Z axis are the θX direction, the θY direction, and the θZ direction.
[0015]
As shown in FIG. 2, the illumination optical system IL includes a light source 1 composed of an ultrahigh pressure mercury lamp or the like, an elliptical mirror 1a that condenses a light beam emitted from the light source 1, and a light beam collected by the elliptical mirror 1a. Of these, the dichroic mirror 2 that reflects a light beam having a wavelength necessary for exposure and transmits a light beam having another wavelength, and a light beam reflected by the dichroic mirror 2 further has a wavelength necessary for exposure (usually g, h, i Wavelength selection filter 3 that passes only at least one band of lines), and a plurality of light beams from the wavelength selection filter 3, in this embodiment, are branched into seven, and each illumination system module via the reflection mirror 5 And a light guide 4 incident on IMa to IMg.
[0016]
There are a plurality of illumination system modules IM, seven in this embodiment, IMa to IMg (however, only those corresponding to the illumination system module IMg are shown in FIG. 2 for convenience), and the illumination optical systems IMa to IMg. Are arranged with a certain interval in the X-axis direction and the Y-axis direction. The exposure light EL emitted from each of the plurality of illumination system modules IMa to IMg illuminates different small areas (illumination areas of the illumination optical system) on the mask M, respectively.
[0017]
Each of the illumination system modules IMa to IMg includes an illumination shutter 6, a relay lens 7, a fly-eye lens 8 as an optical integrator, and a condenser lens 9. The illumination shutter 6 is disposed on the downstream side of the light path of the light guide 4 so as to be able to advance and retreat with respect to the optical path. The illumination shutter 6 blocks the light beam from the optical path when the optical path is blocked, and releases the light block from the light beam when the optical path is released. The illumination shutter 6 is connected to a shutter drive unit 6a that moves the illumination shutter 6 forward and backward with respect to the optical path of the light beam. The shutter driving unit 6a is controlled by the control device CONT.
[0018]
Moreover, the light quantity adjustment mechanism 10 is provided in each of the illumination system modules IMa to IMg. The light quantity adjusting mechanism 10 adjusts the exposure amount of each optical path by setting the illuminance of the light beam for each optical path. The half mirror 11, the detector 12, the filter 13, and the filter driving unit 14 are adjusted. I have. The half mirror 11 is disposed in the optical path between the filter 13 and the relay lens 7, and part of the light beam that has passed through the filter 13 is incident on the detector 12. Each detector 12 always independently detects the illuminance of the incident light beam, and outputs the detected illuminance signal to the control device CONT.
[0019]
As shown in FIG. 3, the filter 13 is a glass interdigital pattern formed on a glass plate 13 a so that the transmittance gradually changes linearly in a certain range along the X-axis direction. It is formed and disposed between the illumination shutter 6 and the half mirror 11 in each optical path.
[0020]
The half mirror 11, the detector 12, and the filter 13 are disposed for each of a plurality of optical paths. The filter drive unit 14 moves the filter 13 in the X-axis direction based on an instruction from the control device CONT. Then, the amount of light for each optical path is adjusted by moving the filter 13 by the filter driving unit 14.
[0021]
The light beam that has passed through the light amount adjusting mechanism 10 reaches the fly-eye lens 8 through the relay lens 7. The fly-eye lens 8 forms a secondary light source on the exit surface side, and can irradiate the illumination area of the mask M with uniform illuminance via the condenser lens 9. The exposure light EL that has passed through the condenser lens 9 passes through a catadioptric optical system 15 including a right-angle prism 16, a lens system 17, and a concave mirror 18 in the illumination system module, and then passes through a mask M to a predetermined value. Illuminate in the lighting area. The mask M is illuminated in different illumination areas by the exposure light EL transmitted through the illumination system modules IMa to IMg.
[0022]
The mask stage MST that supports the mask M has a long stroke in the X-axis direction and a stroke of a predetermined distance in the Y-axis direction orthogonal to the scanning direction so as to perform one-dimensional scanning exposure. As shown in FIG. 2, the mask stage MST includes a mask stage driving unit MSTD that moves the mask stage MST in the X-axis direction and the Y-axis direction. The mask stage driving unit MSTD is controlled by the control device CONT.
[0023]
As shown in FIG. 1, movable mirrors 32a and 32b are respectively provided in the orthogonal directions on the end edges in the X-axis direction and the Y-axis direction on the mask stage MST. A plurality of, in the present embodiment, two laser interferometers Mx1 and Mx2 are arranged opposite to the movable mirror 32a. Further, a laser interferometer My1 is arranged to face the movable mirror 32b. Each of the laser interferometers Mx1 and Mx2 irradiates the movable mirror 32a with laser light and detects the distance from the movable mirror 32a. The detection results of the laser interferometers Mx1 and Mx2 are output to the control device CONT, and the control device CONT rotates the position of the mask stage MST in the X axis direction and the rotation around the Z axis based on the detection results of the laser interferometers Mx1 and Mx2. Find the amount. The laser interferometer My1 irradiates the moving mirror 32b with laser light and detects the distance from the moving mirror 32b. The detection result of the laser interferometer My1 is output to the control device CONT, and the control device CONT obtains the position of the mask stage MST in the Y-axis direction based on the detection result of the laser interferometer My1. Then, the control device CONT monitors the position (posture) of the mask stage MST from the outputs of the laser interferometers Mx1, Mx2, and My1, and controls the mask stage drive unit MSTD to thereby move the mask stage MST to a desired position (posture). ).
[0024]
The exposure light EL that has passed through the mask M is incident on each of the projection optical systems PLa to PLg. The projection optical systems PLa to PLg form a pattern image existing in the illumination area of the mask M on the photosensitive substrate P, and project and expose the pattern image on a specific area (projection area) of the photosensitive substrate P. It is provided corresponding to the system modules IMa to IMg.
[0025]
As shown in FIG. 1, among the plurality of projection optical systems PLa to PLg, the projection optical systems PLa, PLc, PLe, and PLg and the projection optical systems PLb, PLd, and PLf are arranged in a staggered pattern in two rows. That is, the projection optical systems PLa to PLg arranged in a staggered manner are arranged by displacing adjacent projection optical systems (for example, projection optical systems PLa and PLb, PLb and PLc) by a predetermined amount in the Y-axis direction. Yes. Each of these projection optical systems PLa to PLg transmits a plurality of exposure lights EL emitted from the illumination system modules IMa to IMg and transmitted through the mask M, and a pattern image of the mask M on the photosensitive substrate P placed on the substrate stage PST. Project. That is, the exposure light EL transmitted through each of the projection optical systems PLa to PLg forms a pattern image corresponding to the illumination area of the mask M on a different projection area on the photosensitive substrate P with predetermined imaging characteristics.
[0026]
As shown in FIG. 2, each of the projection optical systems PLa to PLg includes an image shift mechanism 19, two sets of catadioptric optical systems 21 and 22, a field stop 20, and a magnification adjustment mechanism 23. . For example, the image shift mechanism 19 shifts the pattern image of the mask M in the Y-axis direction or the X-axis direction by rotating two parallel flat plate glasses around the X-axis or the Y-axis, respectively. The exposure light EL that has passed through the mask M passes through the image shift mechanism 19 and then enters the first set of catadioptric optical system 21.
[0027]
The catadioptric optical system 21 forms an intermediate image of the pattern of the mask M, and includes a right-angle prism 24, a lens system 25, and a concave mirror 26. The right-angle prism 24 is rotatable around the Z axis, and the pattern image of the mask M can be rotated.
[0028]
A field stop 20 is disposed at the intermediate image position. The field stop 20 sets a projection area on the photosensitive substrate P, and is disposed at a position substantially conjugate with the mask M and the photosensitive substrate P in the projection optical system PL. The light beam that has passed through the field stop 20 enters the second set of catadioptric optical system 22. As with the catadioptric optical system 21, the catadioptric optical system 22 includes a right-angle prism 27, a lens system 28, and a concave mirror 29. The right-angle prism 27 is also rotatable around the Z axis, and the pattern image of the mask M can be rotated.
[0029]
The exposure light EL emitted from the catadioptric optical system 22 passes through the magnification adjusting mechanism 23 and forms a pattern image of the mask M on the photosensitive substrate P at an equal magnification. The magnification adjustment mechanism 23 is composed of, for example, three lenses, a plano-convex lens, a biconvex lens, and a plano-convex lens. The biconvex lens positioned between the plano-convex lens and the plano-concave lens is moved in the Z direction to change the relative position. As a result, the magnification of the pattern image of the mask M is changed.
[0030]
The substrate stage PST that supports the photosensitive substrate P has a substrate holder, and holds the photosensitive substrate P via the substrate holder. Similar to mask stage MST, substrate stage PST has a long stroke in the X-axis direction for performing one-dimensional scanning exposure and a long stroke for stepping in the Y-axis direction orthogonal to the scanning direction. As shown in FIG. 2, a substrate stage drive unit PSTD that moves the substrate stage PST in the X-axis direction and the Y-axis direction is provided. The substrate stage drive unit PSTD is controlled by the control device CONT. Further, the substrate stage PST can also be moved in the Z-axis direction and the θX, θY, and θZ directions.
[0031]
As shown in FIG. 1, movable mirrors 34a and 34b are respectively installed in the X-axis direction and Y-axis direction on the substrate stage PST in directions orthogonal to each other. A plurality of, in this embodiment, two laser interferometers Px1 and Px2 are arranged to face each other on the movable mirror 34a extending in the Y-axis direction. In addition, a plurality of, in this embodiment, three laser interferometers Py1, Py2, and Py3 are arranged to face each other on the movable mirror 34b extending in the X-axis direction. Here, each of the plurality of laser interferometers Py <b> 1 to Py <b> 3 is provided side by side at equal intervals along the X-axis direction. Each of the laser interferometers Px1 and Px2 irradiates the moving mirror 34a with laser light and detects the distance from the moving mirror 34a. The detection results of the laser interferometers Px1 and Px2 are output to the control device CONT, and the control device CONT rotates the position of the substrate stage PST in the X-axis direction and around the Z-axis based on the detection results of the laser interferometers Px1 and Px2. Find the amount. The laser interferometers Py1 to Py3 irradiate the moving mirror 34b with laser light and detect the distance from the moving mirror 34b. The detection results of the laser interferometers Py1 to Py3 are output to the control device CONT, and the control device CONT obtains the position of the substrate stage PST in the Y-axis direction based on the detection results of the laser interferometers Py1 to Py3. Then, the control device CONT monitors the position (posture) of the substrate stage PST from the outputs of the laser interferometers Px1, Px2, and Py1 to Py3, and controls the substrate stage driving unit PSTD to place the substrate stage PST at a desired position. Set to (Posture).
[0032]
The mask stage driving unit MSTD and the substrate stage driving unit PSTD are independently controlled by the control unit CONT. The mask stage MST and the substrate stage PST are driven by the mask stage driving unit MSTD and the substrate stage driving unit PSTD, respectively. And each can be moved independently. Then, the control unit CONT controls the drive units PSTD and MSTD while monitoring the positions of the mask stage MST and the substrate stage PST, so that the mask M and the photosensitive substrate P can be arbitrarily set with respect to the projection optical system PL. Are moved synchronously in the X-axis direction at a scanning speed (synchronous movement speed).
[0033]
Each of the projection areas 50a to 50g of the projection optical systems PLa to PLg on the photosensitive substrate P is set to a predetermined shape, in this embodiment, a trapezoidal shape. As shown in FIG. 1, the projection areas 50a, 50c, 50e, and 50g and the projection areas 50b, 50d, and 50f are arranged to face each other in the X-axis direction. Further, the projection areas 50a to 50g are arranged in parallel so that ends (boundary parts, joint parts) of adjacent projection areas overlap in the Y-axis direction. In addition, by arranging the boundary portions of the projection areas 50a to 50g in parallel so as to overlap in the Y-axis direction, the total width of the projection areas in the X-axis direction is set to be substantially equal. By doing so, the exposure amount when scanning exposure is performed in the X-axis direction is made equal. As described above, by providing the overlapping region (joint portion) where the projection regions 50a to 50g by the projection optical systems PLa to PLg overlap each other, the change in optical aberration and the change in illuminance at the joint portion can be smoothed.
[0034]
Next, the alignment system AL will be described.
The alignment system AL detects an alignment mark (substrate alignment mark) provided on the photosensitive substrate P. As shown in FIGS. 1 and 2, the projection optical systems PLa arranged in two rows, Between PLc, PLe, and PLg and projection optical systems PLb, PLd, and PLf, it is provided so as to face the photosensitive substrate P. A plurality of alignment systems AL are arranged in the Y-axis direction (second direction), and detect a plurality of substrate alignment marks provided on the photosensitive substrate P. Further, between the projection optical systems PLa, PLc, PLe, and PLg arranged in two rows and the projection optical systems PLb, PLd, and PLf, the photosensitive substrate P is opposed and the Z-axis direction of the photosensitive substrate P is set. A substrate-side autofocus detection system (AF detection system) 60 that detects the position of the mask M and a mask-side autofocus detection system 70 that faces the mask M and detects the position of the mask M in the Z-axis direction are provided. . A plurality of substrate side AF detection systems 60 and mask side AF detection systems 70 are also arranged side by side in the Y-axis direction. Here, the plurality of alignment systems AL, the substrate side AF detection system 60, and the mask side AF detection system 70 are supported by the housing H as a unit as shown in FIG. In the following description, the AF detection systems 60 and 70 and the alignment system AL supported by the housing H are appropriately referred to as “alignment units”.
[0035]
FIG. 4 is a perspective view of the alignment unit U. FIG. FIG. 5 is a diagram for explaining the positional relationship between the alignment system AL, the substrate side AF detection system 60, and the mask side AF detection system 70 in the alignment unit U, and the mask M and the photosensitive substrate P. Here, FIG. 5A is a diagram showing a positional relationship between the mask M and the mask side AF detection system 70, and FIG. 5B is a cross-sectional view taken along the line AA of the alignment unit U in FIG. FIG. 5C is a plan view of the substrate stage PST that supports the photosensitive substrate P as viewed from the upper side (+ Z side). And the mask side AF detection system 70 shown to Fig.5 (a) is corresponded in the BB cross-sectional arrow view of FIG.
As shown in FIGS. 4 and 5B, a plurality of alignment systems AL (AL1 to AL6), six in the present embodiment, are arranged in the Y-axis direction, which is the non-scanning direction. The alignment systems AL1 to AL6 are provided between the projection optical systems PLa, PLc, PLe, and PLg arranged in two rows and the projection optical systems PLb, PLd, and PLf, and projection regions 50a of the projection optical systems PLa to PLg. It arrange | positions along the arrangement direction of -50g.
[0036]
As shown in FIG. 5B, among the plurality of alignment systems AL1 to AL6 arranged in the Y-axis direction, the alignment systems AL2 to AL5 at the center in the Y-axis direction are provided inside the projection optical system PL (PLa to PLg). The alignment systems AL1 and AL6 on both sides in the Y-axis direction are provided outside the projection optical system PL. Here, as shown in FIGS. 5B and 5C, among the plurality of alignment systems AL1 to AL6, the distance between the outer two alignment systems AL1 and AL6 is the length of the photosensitive substrate P in the Y-axis direction. It is set almost equal. Further, as shown in FIGS. 5A and 5B, the distance between the outer two alignment systems AL1 and AL6 is longer than the length of the mask M in the Y-axis direction (the length of the mask M in the Y-axis direction). Is set).
[0037]
On the other hand, as shown in FIG. 5C, the photosensitive substrate P is provided with a plurality of alignment marks (substrate alignment marks) m1 to m6 used for alignment processing. In the present embodiment, six alignment marks m1 to m6 arranged in the Y-axis direction are formed on the photosensitive substrate P at six positions in the X-axis direction, so that a total of 36 alignment marks are formed. Has been. In the drawing, the alignment mark is shown as “●”, but it may be a cross mark “+” or a box mark “□”.
[0038]
In the present embodiment, alignment systems AL1 to AL6 are provided corresponding to six alignment marks m1 to m6 arranged in the Y-axis direction on the photosensitive substrate P. Each of these six alignment systems AL1 to AL6 and each of the alignment marks m1 to m6 are set to face each other, and the alignment systems AL1 to AL6 face each of the alignment marks m1 to m6. Each of the marks m1 to m6 can be detected simultaneously. That is, in the present embodiment, the arrangement (interval) of the alignment systems AL1 to AL6 is set based on the arrangement (interval) of the alignment marks m1 to m6 formed on the photosensitive substrate P.
[0039]
As shown in FIGS. 4 and 5B, a plurality of substrate side AF detection systems 60 (60a to 60g) are provided on both sides in the X-axis direction of the alignment systems AL1 to AL6. In the present embodiment, seven substrate side AF detection systems 60a to 60g are provided. Substrate side AF detection systems 60a to 60g are provided at positions facing the photosensitive substrate P supported by the substrate stage PST, and detect positions in the direction orthogonal to the exposure surface of the photosensitive substrate P, that is, the Z-axis direction, respectively. To do. Among the plurality of substrate side AF detection systems 60a to 60g, the AF detection systems 60a, 60b, 60d, 60f, and 60g are arranged side by side in the Y axis direction, and the AF detection systems 60c and 60e are arranged in the Y axis direction. Is arranged in. The two rows of AF detection systems 60a, 60b, 60d, 60f, and 60g and the AF detection systems 60c and 60e are arranged so as to sandwich the alignment system AL (AL1 to AL6).
[0040]
Among the plurality of substrate side AF detection systems 60a to 60g, the substrate side AF detection systems 60b to 60f at the center in the Y-axis direction are provided inside the projection optical system PL (PLa to PLg), and the substrate side AFs on both sides in the Y-axis direction. The detection systems 60a and 60g are provided outside the projection optical system PL (PLa to PLg). Here, each of the outer substrate side AF detection systems 60a and 60g is provided adjacent to each of the two outer alignment systems AL1 and AL6 among the plurality of alignment systems AL1 to AL6. The distance between the two outer substrate side AF detection systems 60a and 60g is also set to be approximately equal to the length of the photosensitive substrate P in the Y-axis direction. Further, the substrate side AF detection systems 60b to 60f provided inside the projection optical system PL are arranged in a staggered manner in two rows, and are provided at substantially equal intervals in the Y-axis direction.
[0041]
The detection results of the substrate side AF detection systems 60a to 60g are output to the control device CONT, and the control device CONT determines the position of the photosensitive substrate P in the Z-axis direction based on the detection results of the substrate side AF detection systems 60a to 60g. Ask. Furthermore, since the substrate side AF detection systems 60a to 60g are two-dimensionally arranged in each of the X axis direction and the Y axis direction, the control device CONT is based on the detection results of the plurality of substrate side AF detection systems 60a to 60g. Thus, the attitude of the photosensitive substrate P in the directions around the X axis and the Y axis can be obtained. The control device CONT drives the substrate stage drive unit PSTD based on the obtained position in the Z-axis direction and the posture in the directions around the X-axis and Y-axis, adjusts the position of the photosensitive substrate P in the Z-axis direction, and X Adjustment of the posture in the direction around the axis and the Y axis, that is, leveling adjustment is performed.
[0042]
As shown in FIGS. 4 and 5A, the alignment unit U is provided with a plurality of mask side AF detection systems 70 (70a to 70d). In the present embodiment, four mask side AF detection systems 70a to 70d are provided. The mask side AF detection systems 70a to 70d are provided at positions facing the mask M supported by the mask stage MST, and detect positions in the direction perpendicular to the pattern formation surface of the mask M, that is, the Z axis direction, respectively. . Each of the plurality of mask side AF detection systems 70a to 70d is arranged side by side at equal intervals in the Y-axis direction. Here, as shown in FIG. 5A, the mask side AF detection systems 70a to 70d are provided inside the projection optical system PL (PLa to PLg), and the distance between the two outer mask side AF detection systems 70a and 70d. Is set approximately equal to the length of the mask M in the Y-axis direction.
[0043]
FIG. 6 is a schematic configuration diagram of the alignment system AL1. The other alignment systems AL2 to AL6 have the same configuration as the alignment system AL1.
As shown in FIG. 6, the alignment system AL1 includes an alignment light source 81 that is a halogen lamp that emits alignment detection light, and a light guide 82 that is an optical fiber that guides the detection light emitted from the light source 81 to the relay lens 83. The detection light that is provided between the half mirror 84 provided on the downstream side of the optical path of the relay lens 83 and the half mirror 84 and the photosensitive substrate P (alignment marks m1 to m6) that is the detection target and passes through the half mirror 84. Is applied to the photosensitive substrate P, the deflecting mirror 86 through which the reflected light generated on the photosensitive substrate P (alignment mark) by the irradiation of the detection light is guided through the half mirror 84, and the reflection from the deflecting mirror 86. A beam splitter (branching device) 87 for branching light and two light beams branched by the beam splitter 87 A low magnification the alignment light receiving system 88 in which one of the light beam out is incident, and the other light beam and a high magnification the alignment light receiving system 89 which enters. The low-magnification alignment light receiving system 88 includes a low-magnification lens system 88A and a low-magnification imaging device (CCD) 88B, and can measure a wide area on the photosensitive substrate P with a predetermined accuracy. The high-magnification alignment light receiving system 89 includes a high-magnification lens system 89A and a high-magnification imaging device (CCD) 89B, and can measure a narrow region of the photosensitive substrate P with high accuracy. The low magnification alignment light receiving system 88A and the high magnification alignment light receiving system 88B are arranged coaxially. The light (reflected light) generated by irradiating the photosensitive substrate P (substrate alignment mark) with the alignment detection light is received by the low-magnification alignment light-receiving system 88 and the high-magnification alignment light-receiving system 89, respectively.
[0044]
The low-magnification alignment light receiving system 88 detects the position information of the alignment mark m1 (m2 to m6) with rough accuracy based on optical information from a wide area of the photosensitive substrate P irradiated with the alignment detection light. Process. On the other hand, the high-magnification alignment light receiving system 89 is a fine that detects the position information of the alignment mark m1 (m2 to m6) with high accuracy based on the light information from the narrow region of the photosensitive substrate P irradiated by the alignment detection light. Perform alignment processing. Each of the low-magnification alignment light-receiving system 88 and the high-magnification alignment light-receiving system 89 outputs a light-receiving signal to the control device CONT, and the control device CONT performs image processing based on the light-receiving signals from the alignment light-receiving systems 88 and 89, and the mark position Ask for information. Here, the control device CONT refers to the search alignment processing result by the low magnification alignment light receiving system 88 and performs the fine alignment processing by the high magnification alignment light receiving system 89.
[0045]
When the mark position information is obtained by the alignment system AL, the mark position is obtained from the edge information of the mark by image processing. A pattern matching method may be used as a method for obtaining the mark position. That is, the control device CONT is connected to a storage device (not shown) that stores the template image, and obtains the coordinates of the pattern (position in the moving coordinate system of the stage) that matches the template by pattern matching. The control unit CONT uses this coordinate value to determine the amount of deviation that has occurred during splice exposure or overlay exposure, and gives the correction parameter to the substrate stage drive unit PSTD during the next and subsequent exposures, thereby aligning accuracy. To increase.
[0046]
In the alignment system AL1 (AL2 to AL6), the light source 81, the light guide 82, and the relay lens system 83 constitute a light transmission system of the alignment system, and include a beam splitter 87, a low magnification alignment light receiving system 88, and a high magnification. The alignment light receiving system 89 constitutes a light receiving system of the alignment system. The light source 81 may be configured to be provided in each of the plurality of alignment systems AL1 to AL6. The light emitted from one light source 81 is branched by a plurality of ride guides (optical fibers) 82, and the plurality of branched lights. May be supplied to each of alignment systems AL1 to AL6. The alignment detection light is preferably non-photosensitive to the resist on the photosensitive substrate P, and cuts light of a specific wavelength from light (white light) emitted from a light source 81 formed of a halogen lamp. The filter may be provided on the optical path between the light source 81 and the photosensitive substrate P.
[0047]
FIG. 7 is a schematic configuration diagram showing the substrate side AF detection system 60a. The other substrate side AF detection systems 60b to 60g and the mask side AF detection systems 70a to 70d have the same configuration as the AF detection system 60a.
As shown in FIG. 7, the AF detection system 60a includes an AF light source 61 composed of an LED that emits AF detection light, a light transmission lens system 62 into which the detection light emitted from the light source 61 is incident, and a light transmission lens. On the photosensitive substrate P (or mask M) based on the detection light irradiated through the mirror 63 and the detection light irradiated through the mirror 63, the light passing through the system 62 is guided to the photosensitive substrate P (or mask M) to be detected from the tilt direction. A mirror 64 that guides the generated reflected light to the light receiving lens system 65 and an image sensor (CCD) 66 that receives the light that has passed through the light receiving lens system 65 are provided. The light transmission lens system 62 irradiates the photosensitive substrate P after shaping the detection light into a slit shape, for example. Here, as shown in FIG. 7, when the position of the photosensitive substrate P to be detected in the Z-axis direction is displaced by ΔZ, the slit-shaped detection light emitted from the tilt direction is coupled in the X-axis direction of the image sensor 66. The image position is displaced by ΔX. The imaging signal of the imaging device 66 is output to the control device CONT, and the control device CONT obtains the displacement amount ΔZ of the photosensitive substrate P in the Z-axis direction based on the displacement amount ΔX of the imaging position with respect to the reference position. Here, when the magnification from the entrance surface to the exit surface of the light receiving lens system 65 is set to N times (for example, 10 times), the image sensor 66 is N times (10 times the displacement ΔZ of the photosensitive substrate P). (Times) sensitivity.
[0048]
In the AF detection system 60a (60b to 60g, 70a to 70d), the light source 61, the light transmission lens system 62, and the mirror 63 constitute a light transmission system of the AF detection system, and the mirror 64, the light receiving lens system 65, The image sensor 66 constitutes a light receiving system of the AF detection system. The light source 61 may be provided in each of the plurality of AF detection systems 60a to 60g (70a to 70d), or the light emitted from one light source 61 is branched by a plurality of ride guides (optical fibers). A configuration may be adopted in which a plurality of branched lights are supplied to each of a plurality of AF detection systems. In addition, it is desirable that the AF detection light is also non-photosensitive to the resist on the photosensitive substrate P, and a filter that cuts light having a specific wavelength out of the light emitted from the light source 61 is used as the light source 61 and the photosensitive substrate. It is good also as a structure provided on the optical path between P.
[0049]
By the way, the alignment system AL in this embodiment is an off-axis system, and when performing the alignment process, a baseline amount that is a relative position between the mask M and the substrate alignment system AL is measured. Hereinafter, the baseline measurement method will be described.
As shown in FIGS. 1, 2 and 5, the mask M is provided with a baseline measurement mark (mask side AIS mark) 90, and the substrate stage PST has a baseline measurement mark (substrate side). A reference member 92 having an AIS mark 91 is provided. The formation position (height) of the substrate side AIS mark 91 in the Z-axis direction is set so as to substantially coincide with the surface (exposure surface) of the photosensitive substrate P. The mask side AIS mark 90 is provided in a predetermined positional relationship with respect to a specific position (for example, the center position) of the mask M. The mask side AIS mark 90 and the substrate side AIS mark 91 correspond to each other, and a plurality of mask side AIS marks 91 are provided side by side in the Y-axis direction. As shown in FIG. 2, an AIS light receiving system 94 capable of receiving light that has passed through the reference member 92 is embedded in the substrate stage PST below the reference member 92. The AIS light receiving system 94 includes a lens system 95 and an image pickup device (CCD) 96 that receives light via the lens system 95.
[0050]
Next, a baseline measurement procedure will be described with reference to FIG.
As shown in FIG. 8A, the substrate side AF detection system 60 detects the distance from the reference member 92 having the substrate side AIS mark 91 provided on the substrate stage PST, and the mask side AF detection system 70 The distance from the mask M having the mask side AIS mark 90 is detected. The control device CONT obtains the distance between the mask M and the reference member 92 based on the detection results of the substrate side AF detection system 60 and the mask side AF detection system 70 (step SA1).
At this time, the position of the mask stage MST supporting the mask M is detected by the laser interferometers Mx1, Mx2, and My1, and the position of the substrate stage PST is detected by the laser interferometers Px1, Px2, and Py1. That is, the mask M (mask stage MST) also detects the Y-axis direction coordinates with the laser interferometer My1 and the substrate stage PST with any of the laser interferometers Py1, Py2, Py3.
[0051]
Next, as shown in FIG. 8B, the control unit CONT uses the so-called through-the-lens (TTL) method to connect the AIS mark 90 on the mask M and the AIS mark 91 on the substrate stage PST with the image sensor 96. Then, the relative position between the mask M and the substrate stage PST is obtained based on the detection result (step SA2).
Specifically, the control device CONT moves the mask stage MST and the substrate stage PST so that the image of the mask side AIS mark 90 and the image of the substrate side AIS mark 91 coincide with each other by the imaging device 96, and the illumination optical system IL. Then, the mask side AIS mark 90 of the mask M is illuminated. The illumination light (exposure light) that has passed through the mask M passes through the projection optical system PL and also passes through the substrate side AIS mark 91 and is guided to the image sensor 96. Here, the control device CONT adjusts the position of the substrate stage PST in the Z-axis direction and the image characteristics of the projection optical system PL based on the distance between the mask M and the reference member 92 obtained in step SA1, and the mask side AIS. The respective images of the mark 90 and the substrate side AIS mark 91 are formed by the image pickup device 96 (focused). At this time, the position of the mask stage MST supporting the mask M is detected by the laser interferometers Mx1, Mx2, and My1, and the position of the substrate stage PST is detected by the laser interferometers Px1, Px2, and Py1. Note that, for example, the filter 13 in the illumination optical system IL is driven so that an optimal amount of light (illuminance) can be obtained on the image sensor 96 when the AIS marks 90 and 91 are imaged by the image sensor 96 using exposure light. can do.
[0052]
Next, as shown in FIG. 8C, the control device CONT moves the substrate stage PST, and the substrate stage PST is moved to the center of the measurement region of the alignment system AL (specifically, an index mark provided in the measurement region). The positions of the substrate stage PST at this time are detected by the laser interferometers Px1, Px2, and Py1 (step SA3).
From the stage position detection result obtained by the laser interferometer obtained in step SA2 and step SA3, a baseline amount that is a relative position between the mask M and the alignment system AL is obtained. Then, based on the obtained baseline amount, the control device CONT aligns (aligns) the photosensitive substrate P placed on the substrate stage PST with the mask M by the alignment system AL.
[0053]
The baseline measurement may be performed every time the exposure process is started, or may be performed every predetermined time interval (for example, every 10 hours, every day, etc.) and every predetermined number of lots. In addition, while the images of the AIS marks 90 and 91 are picked up by the image pickup device 96, the right angle prisms 24 and 27 as the image shift mechanism 19, the magnification adjustment mechanism 23, and the rotation adjustment mechanism of the projection optical system PL (PLa to PLg). , And the image characteristics such as shift, scaling, and rotation of each of the projection optical systems PLa to PLg can be adjusted.
[0054]
Next, a method for aligning the mask M and the photosensitive substrate P by the exposure apparatus EX having the alignment system AL described above and a method for exposing the pattern of the mask M to the photosensitive substrate P will be described. In the present embodiment, as shown in FIG. 9, nine pattern formation areas (exposure areas) PA1 to PA9 are set on the photosensitive substrate P, and each of the pattern formation areas PA1 to PA9 is subjected to an exposure process, whereby the device Shall be formed. Here, among the plurality of pattern formation areas PA1 to PA9, three pattern formation areas PA1 to PA3 are set side by side in the Y axis direction (second direction), and the pattern formation areas PA4 to PA6 are 3 in the Y axis direction. Are set side by side, and three pattern formation areas PA7 to PA9 are set side by side in the Y-axis direction. Each of these pattern formation areas PA1 to PA9 is set to have a larger size in the X-axis direction than in the Y-axis direction. Among the plurality of alignment marks m1 to m6 arranged in the Y-axis direction, the alignment marks m1 and m2 are arranged in the pattern formation regions PA3, PA6, and PA9, and the alignment marks m3 and m4 are arranged in the pattern formation regions PA2, PA5, and PA8. The intervals between the alignment marks m1 to m6 are set in advance so that the alignment marks m5 and m6 are arranged in the pattern formation areas PA1, PA4, and PA7. The alignment marks m1 to m6 arranged in the Y-axis direction are arranged at predetermined intervals in the X-axis direction, so that the alignment m1 is aligned at each of the four corners of the pattern formation regions PA3, PA6, and PA9. , M2 are arranged, alignments m3, m4 are arranged at the four corners of the pattern formation regions PA2, PA5, PA8, and alignments m5, m6 are arranged at the four corners of the pattern formation regions PA1, PA4, PA7. .
[0055]
Hereinafter, the alignment processing procedure and the exposure processing procedure will be described with reference to the flowcharts of FIGS. 10 to 15 and FIGS. 16 and 17.
After the baseline measurement is performed as described with reference to FIG. 8, the control unit CONT moves the substrate stage PST and -X provided on the photosensitive substrate P as shown in FIG. The alignment marks m1 to m6 in the first row from the side are made to face each of the alignment systems AL1 to AL6. As described above, in this embodiment, since the arrangement (interval) of the alignment systems AL1 to AL6 is set based on the arrangement (interval) of the alignment marks m1 to m6 formed on the photosensitive substrate P, the alignment system AL1 to AL6 are alignment marks m1 corresponding to the respective pattern formation areas (exposure areas) PA1 to PA3 arranged in the Y-axis direction in a state of facing the alignment marks m1 to m6 in the first column from the −X side. .About.m6 are detected simultaneously (step SB1).
At this time, two alignment marks m5 and m6 are arranged in the pattern formation area PA1, two alignment marks m3 and m4 are arranged in the pattern formation area PA2, and two alignment marks m5 and m6 are arranged in the pattern formation area PA3. Are arranged, and two alignment systems AL5 and AL6 are arranged for the pattern formation region PA1 and two alignment systems AL3 and AL4 are arranged for the pattern formation region PA2 so as to correspond to these alignment marks. Two alignment systems AL1 and AL2 are arranged for the pattern formation region PA3. That is, a plurality of alignment systems AL1 to AL6 are arranged in correspondence with each of pattern formation regions (exposure regions) PA1 to PA3 (PA4 to PA6, PA7 to PA9) arranged in the Y-axis direction. It has become.
[0056]
Next, as shown in FIG. 10B, the control device CONT moves the substrate stage PST in the −X direction, and the alignment marks m1 to m6 in the second row from the −X side provided on the photosensitive substrate P. Each of the alignment systems AL1 to AL6 is opposed to each other, and each of these alignment marks m1 to m6 is detected simultaneously (step SB2).
[0057]
The control device CONT detects the positions of the first row alignment marks and the second row alignment marks at two locations separated by a predetermined distance in the X-axis direction with respect to each of the pattern formation regions PA1 to PA3. Based on this, correction parameters for correcting image characteristics such as shift, scaling, and rotation for the pattern formation areas PA1 to PA3 are obtained (step SB3).
[0058]
Here, after detecting the alignment mark in the first row, the photosensitive substrate P is scanned with respect to the alignment unit U in order to detect the alignment mark in the second row. Each of the plurality of substrate AF detection systems 60a to 60g arranged in the axial direction detects the height position of the surface of the photosensitive substrate P at predetermined distance intervals in the X-axis direction. That is, the height position of the surface of the photosensitive substrate P is detected at a plurality of grid-like positions. The detection results of each of the substrate AF detection systems 60a to 60g are output to the control device CONT, and the control device CONT outputs each of the pattern formation regions PA1 to PA3 of the photosensitive substrate P based on the detection results of the substrate AF detection systems 60a to 60g. A surface shape is obtained (step SB4).
[0059]
Incidentally, as described above, the substrate AF detection systems 60a and 60g are provided close to the outer two alignment systems AL1 and AL6 among the plurality of alignment systems AL1 to AL6. Therefore, by monitoring the position information of the photosensitive substrate P in the Z-axis direction by the substrate AF detection systems 60a and 60g, the alignment processing (alignment mark detection) by the alignment system is performed, so that the photosensitive substrate P is projected optically during the alignment processing. It is possible to suppress the inconvenience that the alignment process is performed in a state greatly deviated from the image forming plane of the system in the Z-axis direction.
[0060]
In addition, as described with reference to FIG. 6, the alignment systems AL1 to AL6 are provided with a low-magnification alignment light-receiving system 88 for search alignment and a high-magnification alignment light-receiving system 89 for fine alignment. Therefore, for example, when the alignment mark detection using the high magnification alignment light receiving system 89 is impossible, the alignment mark detection can be performed by switching to the low magnification alignment light receiving system 88 and performing the alignment mark detection. As described above, the alignment process can be smoothly performed by performing the alignment mark detection by switching between the low magnification and high magnification alignment light receiving systems. Note that the low-magnification and high-magnification alignment light receiving systems do not have to be provided in all the alignment systems AL1 to AL6, and may be provided in at least the outer two alignment systems AL1 and AL6. Of course, all of the alignment systems AL1 to AL6 may be provided.
[0061]
Next, the control device CONT corrects the image characteristics based on the correction parameter obtained in step SB3, and then performs an exposure process on the pattern formation area PA1 (step SB5).
That is, as shown in FIG. 10C, the control device CONT moves the substrate stage PST so that the projection optical system PL and the + X side end of the pattern formation region PA1 face each other. At the same time, the control device CONT also moves the mask stage MST supporting the mask M (not shown in FIG. 10) to the −X side and aligns the mask M with the photosensitive substrate P. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure processing is performed on the pattern formation region PA1. FIG. 10D shows a state after the scanning exposure for the pattern formation area PA1 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern formation region PA1) obtained in step SB4, the substrate stage PST is set to Z so that the imaging surface of the projection optical system and the surface of the photosensitive substrate P coincide. Scanning exposure is performed while controlling the posture of the photosensitive substrate P by moving in the axial direction, or in the θX and θY directions. Of the plurality of projection optical systems PLa to PLg, a projection optical system that is not used (for example, the projection optical systems PLa and PLg that protrude from the pattern formation area PA1) is shielded by the illumination shutter 6.
[0062]
Next, after correcting the image characteristics based on the correction parameter, the control device CONT performs an exposure process for the pattern formation area PA2 (step SB6).
That is, as shown in FIG. 11A, the control unit CONT moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the −X side end of the pattern formation region PA2 face each other. At this time, the mask stage MST only moves slightly to align the mask M and the photosensitive substrate P, and hardly moves. Then, the mask M and the photosensitive substrate P are synchronously moved in the −X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure processing is performed on the pattern formation region PA2. FIG. 11B shows a state after the scanning exposure for the pattern formation area PA2 is completed. Even during scanning exposure for the pattern formation area PA2, scanning exposure is performed while performing position control and leveling control of the photosensitive substrate P in the Z-axis direction based on the surface shape data of the pattern formation area PA2 obtained in step SB4. .
[0063]
Here, during the scanning exposure process for the pattern formation area PA1, the photosensitive substrate P scans in the + X direction. During the scanning exposure process for the pattern formation area PA2 adjacent to the pattern formation area PA1, the photosensitive substrate P moves in the -X direction. To scan. That is, after detecting an alignment mark at two positions in the X-axis direction corresponding to each of the pattern formation areas PA1 to PA3 arranged in the Y-axis direction, synchronous movement in opposite directions is performed in a plurality of adjacent pattern formation areas PA1 and PA2. In this configuration, the photosensitive substrate P is exposed. By doing so, the throughput of the entire exposure apparatus can be improved. That is, conventionally, after the exposure process for one pattern formation region is completed, in order to perform the exposure process for the next pattern formation region, the mask (mask stage) must be moved greatly in the scanning direction to return to the initial state. However, in this embodiment, it is not necessary to move the mask (mask stage) greatly when performing exposure processing for the next pattern formation region after the exposure processing for one pattern formation region is completed. Since travel time can be reduced, throughput can be improved. In the present embodiment, since the size of the pattern formation region in the non-scanning direction (Y-axis direction) is smaller than the scanning direction (X-axis direction), the pattern forming region in FIG. As shown in FIG. 11A, it is effective to move the photosensitive substrate P stepwise in the Y-axis direction because the moving distance is short.
[0064]
Next, after correcting the image characteristics based on the correction parameter, the control device CONT performs an exposure process on the pattern formation area PA3 (step SB7).
That is, as shown in FIG. 11C, the control device CONT moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the + X side end of the pattern formation region PA3 face each other. Also at this time, the mask stage MST only moves slightly to align the mask M and the photosensitive substrate P, and hardly moves. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure process is performed on the pattern formation region PA3. FIG. 11D shows a state after the scanning exposure for the pattern formation area PA3 is completed. Even during scanning exposure for the pattern formation area PA3, scanning exposure is performed while performing position control and leveling control of the photosensitive substrate P in the Z-axis direction based on the surface shape data of the pattern formation area PA2 obtained in step SB4. . Also in this case, the scanning direction in the exposure process for the pattern formation area PA3 is set to be opposite to the scanning direction in the exposure process for the adjacent pattern formation area PA2.
[0065]
As shown in FIGS. 10 and 11, the position detection in the X-axis direction of the substrate stage PST in steps SB1 to SB7 is performed by laser interferometers Px1 and Px2, and the position detection in the Y-axis direction is performed by the laser interferometer Py1. Is done. And the control apparatus CONT switches the laser interferometer to be used from Py1 to Py2 (step SB8).
[0066]
Next, as shown in FIG. 12A, the control device CONT moves the substrate stage PST, and each of the alignment marks m1 to m6 in the third row from the −X side provided on the photosensitive substrate P and the alignment system. Oppose AL1 to AL6. The alignment systems AL1 to AL6 correspond to the respective pattern formation regions (exposure regions) PA4 to PA6 arranged in the Y-axis direction in a state of facing the alignment marks m1 to m6 in the third column from the −X side. The marks m1 to m6 are detected at the same time (step SB9).
At this time, the laser interferometer Py2 is operated, and the difference between the laser interferometers Py1 and Py2 is measured and stored as offset 1. Thereafter, the Y coordinate of the substrate stage PST is obtained from the measurement value of the laser interferometer Py2 and the offset 1.
[0067]
Next, as illustrated in FIG. 12B, the control device CONT moves the substrate stage PST in the −X direction, and aligns alignment marks m <b> 1 to m <b> 6 in the fourth column from the −X side provided on the photosensitive substrate P. Each of the alignment systems AL1 to AL6 is opposed to each other, and each of these alignment marks m1 to m6 is detected simultaneously (step SB10).
[0068]
The control device CONT detects the positions of the alignment marks of the first row and the second row at two locations that are separated by a predetermined distance in the X-axis direction with respect to each of the pattern formation areas PA4 to PA6. Based on this, correction parameters for correcting image characteristics such as shift, scaling, and rotation for the pattern formation areas PA4 to PA6 are obtained (step SB11).
[0069]
Here, after detecting the alignment mark in the third row, the photosensitive substrate P is scanned with respect to the alignment unit U in order to detect the alignment mark in the fourth row. Each of the plurality of substrate AF detection systems 60a to 60g arranged in the direction detects the height position of the surface of the photosensitive substrate P at predetermined distance intervals in the X-axis direction. The detection results of each of the substrate AF detection systems 60a to 60g are output to the control device CONT, and the control device CONT outputs each of the pattern formation regions PA4 to PA6 of the photosensitive substrate P based on the detection results of the substrate AF detection systems 60a to 60g. A surface shape is obtained (step SB12).
[0070]
Next, the control device CONT corrects the image characteristics based on the correction parameter obtained in step SB11, and then performs an exposure process on the pattern formation area PA4 (step SB13).
That is, as shown in FIG. 12C, the control device CONT moves the substrate stage PST so that the projection optical system PL and the + X side end of the pattern formation region PA4 face each other. Then, the mask M and the photosensitive substrate P are moved synchronously in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure processing is performed on the pattern formation region PA4. FIG. 12D shows a state after the scanning exposure for the pattern formation area PA4 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern formation region PA4) obtained in step SB12, the substrate stage PST is set to Z so that the imaging surface of the projection optical system and the surface of the photosensitive substrate P coincide. Scanning exposure is performed while controlling the posture of the photosensitive substrate P by moving in the axial direction, or in the θX and θY directions.
[0071]
Next, after correcting the image characteristics based on the correction parameter, the control device CONT performs an exposure process on the pattern formation area PA5 (step SB14).
That is, as shown in FIG. 13A, the control unit CONT moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the −X side end of the pattern formation region PA5 face each other. At this time, the mask stage MST only moves slightly to align the mask M and the photosensitive substrate P, and hardly moves. Then, the mask M and the photosensitive substrate P are moved synchronously in the −X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure processing is performed on the pattern formation region PA5. FIG. 13B shows a state after the scanning exposure for the pattern formation area PA5 is completed.
[0072]
Next, after correcting the image characteristics based on the correction parameter, the control device CONT performs an exposure process for the pattern formation area PA6 (step SB15).
That is, as shown in FIG. 13C, the control device CONT moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the + X side end of the pattern formation region PA6 face each other. Also at this time, the mask stage MST only moves slightly to align the mask M and the photosensitive substrate P, and hardly moves. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure process is performed on the pattern formation area PA6. FIG. 13D shows a state after the scanning exposure for the pattern formation area PA6 is completed.
[0073]
In the steps SB9 to SB15, the position of the substrate stage PST in the X-axis direction is detected by the laser interferometers Px1 and Px2, and the position detection in the Y-axis direction is performed by the laser interferometer Py2.
Then, the control device CONT switches the laser interferometer to be used from Py2 to Py3 (step SB16).
[0074]
Next, as shown in FIG. 14A, the control device CONT moves the substrate stage PST, and each of the alignment marks m1 to m6 in the fifth column from the −X side provided on the photosensitive substrate P and the alignment system. Oppose AL1 to AL6. The alignment systems AL1 to AL6 correspond to the respective pattern formation areas (exposure areas) PA7 to PA9 arranged in the Y-axis direction in a state facing the alignment marks m1 to m6 in the fifth column from the −X side. The marks m1 to m6 are detected simultaneously (step SB17).
At this time, the laser interferometer Py3 is operated, and the difference between the laser interferometers Py2 and Py3 is stored as an offset 2. Thereafter, the substrate stage PST coordinates are obtained from the measured value of the laser interferometer Py3, the offset 1 and the offset 2.
[0075]
Next, as shown in FIG. 14B, the control device CONT moves the substrate stage PST in the −X direction, and aligns the alignment marks m1 to m6 in the sixth column from the −X side provided on the photosensitive substrate P. Each of the alignment systems AL1 to AL6 is opposed to each other, and each of these alignment marks m1 to m6 is detected simultaneously (step SB18).
[0076]
The control device CONT detects the positions of the alignment marks of the fifth row and the sixth row at two positions that are separated by a predetermined distance in the X-axis direction with respect to each of the pattern formation areas PA7 to PA9. Based on this, correction parameters for correcting image characteristics such as shift, scaling, and rotation for the pattern formation areas PA7 to PA9 are obtained (step SB19).
[0077]
Here, a plurality of substrate AF detection systems arranged in the Y-axis direction when the photosensitive substrate P scans the alignment unit U in order to detect the alignment mark in the sixth row after detecting the alignment mark in the fifth row. Each of 60a to 60g detects the height position of the surface of the photosensitive substrate P at predetermined distance intervals in the X-axis direction. The detection results of each of the substrate AF detection systems 60a to 60g are output to the control device CONT, and the control device CONT outputs each of the pattern formation areas PA7 to PA9 of the photosensitive substrate P based on the detection results of the substrate AF detection systems 60a to 60g. A surface shape is obtained (step SB20).
[0078]
Next, the control device CONT corrects the image characteristics based on the correction parameter obtained in Step SB18, and then performs an exposure process on the pattern formation area PA7 (Step SB21).
That is, as shown in FIG. 14C, the control device CONT moves the substrate stage PST so that the projection optical system PL and the + X side end of the pattern formation region PA7 face each other. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure process is performed on the pattern formation region PA7. FIG. 14D shows a state after the scanning exposure for the pattern formation area PA7 is completed. Here, based on the surface shape data of the photosensitive substrate P (pattern formation region PA7) obtained in step SB19, the substrate stage PST is set to Z so that the imaging surface of the projection optical system and the surface of the photosensitive substrate P coincide. Scanning exposure is performed while controlling the posture of the photosensitive substrate P by moving in the axial direction, or in the θX and θY directions.
[0079]
Next, after correcting the image characteristics based on the correction parameter, the control device CONT performs an exposure process on the pattern formation area PA8 (step SB22).
That is, as shown in FIG. 15A, the control device CONT moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the −X side end of the pattern formation region PA8 face each other. At this time, the mask stage MST only moves slightly to align the mask M and the photosensitive substrate P, and hardly moves. Then, the mask M and the photosensitive substrate P are moved synchronously in the −X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure processing is performed on the pattern formation region PA8. FIG. 15B shows a state after the scanning exposure for the pattern formation area PA8 is completed.
[0080]
Next, after correcting the image characteristics based on the correction parameter, the control device CONT performs an exposure process on the pattern formation area PA9 (step SB23).
That is, as shown in FIG. 15C, the control device CONT moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the + X side end of the pattern formation region PA9 face each other. Also at this time, the mask stage MST only moves slightly to align the mask M and the photosensitive substrate P, and hardly moves. Then, the mask M and the photosensitive substrate P are moved synchronously in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the exposure process is performed on the pattern formation area PA9. FIG. 15D shows a state after the scanning exposure for the pattern formation area PA9 is completed.
[0081]
The position detection in the X-axis direction of the substrate stage PST in steps SB17 to SB23 is performed by the laser interferometers Px1 and Px2, and the position detection in the Y-axis direction is performed by the laser interferometer Py3.
[0082]
As described above, since six alignment systems AL are arranged side by side in the X-axis direction that is the non-scanning direction that intersects the Y-axis direction that is the scanning direction of the mask M and the photosensitive substrate P, the alignment to be detected Without reducing the number of the marks m1 to m6, the number of detection operations of the alignment marks m1 to m6 can be reduced as compared with the conventional case. Therefore, the alignment processing time can be shortened while maintaining the alignment accuracy.
[0083]
In the present embodiment, there are six alignment systems AL1 to AL6, but it is sufficient that at least three alignment systems are arranged in the Y-axis direction, thereby detecting the alignment mark without reducing the number of alignment marks. The number of operations can be reduced. Further, since the alignment marks arranged in a plurality of pattern formation regions are simultaneously measured using these alignment systems arranged in a plurality, the throughput can be improved.
[0084]
The alignment system AL in the present embodiment is an off-axis alignment system. Accordingly, since the mask alignment mark is not directly detected as compared with the TTL type alignment system that simultaneously measures the mask alignment mark and the substrate alignment mark via the projection optical system PL, the outside of the alignment systems AL1 to AL6. The interval between the two alignment systems AL1 and AL6 can be set larger than the width of the mask M (length in the Y-axis direction). Therefore, the arrangement of the alignment systems AL1 to AL6 can be freely set regardless of the width of the mask M.
[0085]
Since the detection of the alignment mark is performed at two positions that are separated from each other by a predetermined distance in the X-axis direction with respect to one pattern formation region, an accurate alignment process can be performed based on these mark detection results. The alignment mark detection may be performed at at least two locations that are separated by a predetermined distance in the X-axis direction, and may be performed at any plurality of three or more locations. By setting many detection points for alignment mark detection, the alignment accuracy can be improved.
[0086]
When each of the pattern formation areas adjacent in the Y-axis direction is subjected to scanning exposure, scanning exposure processing is performed by synchronous movement in the opposite directions, so that the exposure processing for the first pattern formation area is completed, and then the second pattern formation area is Since it is not necessary to move the mask (mask stage) greatly during the exposure process, the movement time of the mask can be reduced, so that the throughput can be improved.
In the embodiment, the interferometer is switched from Py1 → Py2 and Py2 → Py3 at the alignment timing. However, the X position may be any position where the two interferometers can operate, and may be in the middle of exposure or at the end of exposure. By doing so, it is possible to perform exposure with good alignment accuracy even in the first layer exposure that does not require alignment.
Further, in the offset measurement, the accuracy can be improved by repeating the measurement a plurality of times and averaging. The averaging is 0.1 to 0.2 sec. The effect is great when done above.
[0087]
By the way, as described above, the alignment marks are preferably provided at, for example, four corners with respect to one pattern formation region. By providing four alignment marks for one pattern formation region, image characteristics such as shift, scaling, rotation, and orthogonality can be obtained with high accuracy, and alignment processing can be performed with high accuracy. At least two alignment systems are arranged in the Y-axis direction for each of the pattern formation regions so that two alignment marks arranged in the Y-axis direction among the alignment marks provided at the four corners can be measured simultaneously. It is preferable. However, since the size and number of pattern formation areas set on the photosensitive substrate P are appropriately changed according to the device to be manufactured, two alignment systems are arranged in one pattern formation area depending on the arrangement of alignment systems. There are cases where it is not done. However, by optimizing the alignment system interval using the width (length in the Y-axis direction) L of the photosensitive substrate P as a parameter, even if the size and number of pattern formation regions are changed, one pattern formation region can be changed. Two alignment systems can be arranged.
[0088]
For example, when the alignment system AL is six of AL1 to AL6,
-Interval between alignment systems AL1 and AL2 ≦ (2/7) × L (1)
-Interval between alignment systems AL3 and AL4 ≦ (1/5) × L (2)
-Interval between alignment systems AL5 and AL6 ≦ (2/7) × L (3)
-Interval between alignment systems AL1 and AL6 ≤ L (4)
By arranging the alignment systems AL1 to AL6 so as to satisfy the above conditions, two alignment systems can be arranged for one pattern formation region even if the size and number of pattern formation regions are changed. Can do.
[0089]
This will be described with reference to FIG.
In FIG. 18A1, the photosensitive substrate P having a width L in the Y-axis direction is divided into two in the Y-axis direction and two in the X-axis direction to set a total of four pattern formation regions. It is a figure which shows the case where a screen (pattern) is formed in each. Here, the mask M shown in FIG. 18A2 is used for the exposure process. A “No. 1” pattern is formed on the mask M. FIG. 18A1 shows an alignment system in which white circles “◯” are used. In this example, alignment systems AL1 and AL3 are used for the pattern formation region PA2, and alignment is performed for the pattern formation region PA1. The systems AL4 and AL6 are used. Here, alignment marks corresponding to the alignment systems AL1 to AL6 are formed on the photosensitive substrate P. Since the alignment systems AL1 to AL6 are arranged so as to satisfy the above equations (1) to (4), at least two alignment systems for one pattern formation region, and three alignment systems in the example of FIG. Is placed. Here, the width in the Y-axis direction of each pattern formation region is the same.
[0090]
In FIG. 18B1, the photosensitive substrate P having a width L is divided into three parts in the Y-axis direction and two parts in the X-axis direction, and a total of six pattern formation areas are set, and a screen ( It is a figure which shows the case where a pattern) is formed. Here, the mask M shown in FIG. 18B2 is used for the exposure process. A “No. 1” pattern is formed on the mask M. In the example shown in FIG. 18B1, alignment systems AL1 and AL2 are used for the pattern formation area PA3, alignment systems AL3 and AL4 are used for the pattern formation area PA2, and alignment is performed for the pattern formation area PA1. The systems AL5 and AL6 are used. Also in this case, since the alignment systems AL1 to AL6 are arranged so as to satisfy the expressions (1) to (4), two alignment systems are arranged for one pattern formation region. Here, the width in the Y-axis direction of each pattern formation region is the same.
[0091]
FIG. 18C1 is a diagram showing a case where the photosensitive substrate P having a width L is divided into three parts in the Y-axis direction and divided into two parts in the X-axis direction to set a total of six pattern formation regions. Here, the mask M shown in FIG. 18C2 is used for the exposure process. On the mask M, a “No. 1” pattern and a “No. 2” pattern are formed. Then, each of the “No. 1” pattern and the “No. 2” pattern is appropriately transferred to each of the pattern formation areas PA1 to PA6, and a total of 10 in the Y-axis direction and two in the X-axis direction. Pieces of screens (patterns) are formed. In the example shown in FIG. 18C1, the “No. 1” pattern and the “No. 2” pattern are simultaneously formed in the pattern formation area PA3. At this time, the alignment systems AL1 and AL2 are used. Then, the “No. 1” pattern is formed in the pattern formation area PA2, and the alignment systems AL3 and AL4 are used at this time. When forming the “No. 1” pattern in the pattern formation area PA2, illumination of the exposure light for the “No. 2” pattern is blocked by a blind (illumination area setting device) provided in the illumination optical system IL, etc. Only the “No. 1” pattern of M is formed in the pattern formation area PA3. Here, since the interval between the alignment systems AL3 and AL4 is set as in the above equation (2), these two alignment systems AL3 and AL4 can be arranged with respect to the pattern formation area PA2. Then, the “No. 1” pattern and the “No. 2” pattern are simultaneously formed in the pattern formation area PA1, and at this time, the alignment systems AL5 and AL6 are used. Also in this case, since the alignment systems AL1 to AL6 are arranged so as to satisfy the expressions (1) to (4), two alignment systems are arranged for one pattern formation region.
[0092]
FIG. 18D1 is a diagram showing a case where the photosensitive substrate P having a width L is divided into three in the Y-axis direction and divided into two in the X-axis direction, and a total of six pattern formation regions are set. Here, the mask M shown in FIG. 18D2 is used for the exposure process. On the mask M, a “No. 1” pattern, a “No. 2” pattern, and a “No. 3” pattern are formed. Then, each of the “No. 1” pattern, the “No. 2” pattern, and the “No. 3” pattern is appropriately transferred to each of the pattern formation areas PA1 to PA6, and seven in the Y-axis direction, A total of 14 screens (patterns) are formed in two directions. In the example shown in FIG. 18 (d1), the “No. 2” pattern and the “No. 3” pattern are simultaneously formed in the pattern formation area PA3. At this time, the alignment systems AL1 and AL2 are used. When the “No. 2” and “No. 3” patterns are formed in the pattern formation area PA3, the illumination light exposure to the “No. 1” pattern is blocked by a blind or the like, and the “No. , Only the “No. 3” pattern is formed in the pattern formation area PA3. Then, a “No. 1” pattern, a “No. 2” pattern, and a “No. 3” pattern are formed in the pattern formation area PA2. At this time, alignment systems AL3 and AL4 are used. Then, the “No. 1” pattern and the “No. 2” pattern are simultaneously formed in the pattern formation area PA1, and at this time, the alignment systems AL5 and AL6 are used. When the “No. 1” and “No. 2” patterns are formed in the pattern formation area PA1, illumination of the exposure light for the “No. 3” pattern is blocked by a blind or the like. Also in this case, since the alignment systems AL1 to AL6 are arranged so as to satisfy the expressions (1) to (4), two alignment systems are arranged for one pattern formation region.
[0093]
In the above embodiment, the alignment marks m1 to m6 are arranged at predetermined intervals in the X-axis direction. However, as shown in FIG. 19, the alignment marks m31 and m41 associated with the pattern formation region PA1 and the pattern formation are arranged. The alignment marks m33 and m43 associated with the area PA3 may be arranged so as to be aligned in the Y-axis direction. Similarly, the alignment marks m12 and m22 associated with the pattern formation region PA2 and the alignment marks m14 and m24 associated with the pattern formation region PA4 may be arranged so as to be aligned in the Y-axis direction, or may be associated with the pattern formation region PA3. Alignment marks m33, m43 and alignment marks m35, m45 associated with the pattern formation area PA5 may be arranged in the Y-axis direction, or alignment marks m14, m24 associated with the pattern formation area PA4 and pattern formation The alignment marks m16 and m26 associated with the area PA6 may be arranged so as to be aligned in the Y-axis direction. Of the plurality of alignment marks arranged in the Y-axis direction, two adjacent alignment marks may be simultaneously detected by each of the alignment systems AL1 to AL4. That is, alignment system AL1 simultaneously detects alignment marks m12 and m14 in the measurement region, alignment system AL2 simultaneously detects alignment marks m22 and m24 in the measurement region, and alignment system AL3 detects alignment marks in the measurement region. m31 and m33 are simultaneously detected, and the alignment system AL4 simultaneously detects alignment marks m41 and m43 in the measurement region. By doing so, the number of alignment mark detection operations can be reduced and the throughput can be improved. Further, in this case, the width of the pattern formation region may be set to be narrowed.
When performing the exposure process, the control unit CONT first detects each of the alignment marks in the first row from the −X side by using the alignment systems AL1 to AL4, and then detects each of the alignment marks in the second row from the alignment systems AL1 to AL1. Detect with AL4. Then, the control device CONT performs exposure processing on the pattern formation region PA1 while scanning the photosensitive substrate P in the + X direction, and then performs exposure processing on the pattern formation region PA2 while scanning the photosensitive substrate P in the −X direction. Hereinafter, similarly, after detecting the alignment marks in the third and fourth rows, the control device CONT performs exposure processing on the pattern formation region PA3 while scanning the photosensitive substrate P in the + X direction, and then the photosensitive substrate. While scanning P in the −X direction, the pattern forming region PA4 is exposed. Further, after detecting the alignment marks in the fifth and sixth rows, the control device CONT performs exposure processing on the pattern formation region PA5 while scanning the photosensitive substrate P in the + X direction, and then moves the photosensitive substrate P to − An exposure process is performed on the pattern formation area PA6 while scanning in the X direction.
[0094]
The intervals between the alignment marks m1 to m6 formed on the photosensitive substrate P are set according to the arrangement (interval) of the alignment systems AL1 to AL6, but the alignment system is provided so as to be movable in the Y-axis direction. You can also change the interval between each other.
[0095]
The exposure apparatus EX in the above embodiment is a so-called multi-lens scan type exposure apparatus having a plurality of adjacent projection optical systems. However, the present invention also applies to a scanning type exposure apparatus having one projection optical system. Can be applied.
[0096]
Note that the use of the exposure apparatus EX is not limited to a liquid crystal exposure apparatus that exposes a liquid crystal display element pattern on a square glass plate. For example, an exposure apparatus for manufacturing a semiconductor or a thin film magnetic head is manufactured. Therefore, it can be widely applied to an exposure apparatus.
[0097]
The light source of the exposure apparatus EX of this embodiment is not only g-line (436 nm), h-line (405 nm), i-line (365 nm), but also KrF excimer laser (248 nm), ArF excimer laser (193 nm), F2A laser (157 nm) can be used.
[0098]
The magnification of the projection optical system PL is not limited to an equal magnification system, and may be either a reduction system or an enlargement system.
[0099]
As the projection optical system PL, when using far ultraviolet rays such as excimer laser, a material that transmits far ultraviolet rays such as quartz or fluorite is used as a glass material.2When a laser is used, a catadioptric system or a refractive optical system is used.
[0100]
When a linear motor is used for the substrate stage PST and the mask stage MST, either an air levitation type using an air bearing or a magnetic levitation type using a Lorentz force or a reactance force may be used. The stage may be a type that moves along a guide, or may be a guideless type that does not have a guide.
[0101]
When a planar motor is used as the stage drive device, either the magnet unit or the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is provided on the moving surface side (base) of the stage. Good.
[0102]
The reaction force generated by the movement of the substrate stage PST may be released mechanically to the floor (ground) using a frame member as described in JP-A-8-166475. The present invention can also be applied to an exposure apparatus having such a structure.
[0103]
The reaction force generated by the movement of the mask stage MST may be released mechanically to the floor (ground) using a frame member as described in JP-A-8-330224. The present invention can also be applied to an exposure apparatus having such a structure.
[0104]
As described above, the exposure apparatus of the embodiment of the present application maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.
[0105]
As shown in FIG. 20, the semiconductor device includes a step 201 for designing the function and performance of the device, a step 202 for producing a mask (reticle) based on the design step, and a substrate (wafer, glass plate) as a base material of the device. ), A substrate processing step 204 for exposing the reticle pattern onto the substrate by the exposure apparatus of the above-described embodiment, and developing the exposed substrate, a device assembly step (including a dicing process, a bonding process, and a packaging process) ) 205, manufactured through inspection step 206 and the like.
[0106]
【The invention's effect】
  According to the present invention, detection of a plurality of alignment marks in different exposure areas on a substrate by a plurality of alignment systems is performed a plurality of times by moving the substrate in the first direction, and the position of the substrate in the third direction by the detection system. The detection is performed in parallel with the movement of the substrate in the first direction. For this reason, the detection time of the alignment mark can be shortened as compared with the prior art without reducing the number of alignment marks to be detected, and the position of the substrate in the third direction can be detected in parallel with the alignment mark detection operation. Therefore, the time required for the preparatory operation before exposure of the substrate can be shortened,Throughput of the exposure process can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic perspective view showing an embodiment of an exposure apparatus of the present invention.
FIG. 2 is a schematic configuration diagram of FIG. 1;
FIG. 3 is a diagram illustrating a filter.
FIG. 4 is a schematic perspective view showing an alignment unit including an alignment system.
FIG. 5 is a diagram for explaining an arrangement of an alignment system and an AF detection system.
FIG. 6 is a schematic configuration diagram of an alignment system.
FIG. 7 is a schematic configuration diagram of an AF detection system.
FIG. 8 is a diagram for explaining a baseline measurement procedure;
FIG. 9 is a view for explaining an exposure method of the present invention.
FIG. 10 is a view for explaining the exposure method of the present invention.
FIG. 11 is a view for explaining the exposure method of the present invention.
FIG. 12 is a view for explaining the exposure method of the present invention.
FIG. 13 is a view for explaining the exposure method of the present invention.
FIG. 14 is a view for explaining the exposure method of the present invention.
FIG. 15 is a view for explaining an exposure method of the present invention.
FIG. 16 is a flowchart for explaining the exposure method of the present invention.
FIG. 17 is a flowchart for explaining the exposure method of the present invention.
FIG. 18 is a diagram illustrating an example of an arrangement of an alignment system.
FIG. 19 is a view showing another embodiment of the exposure method of the present invention.
FIG. 20 is a flowchart showing an example of a semiconductor device manufacturing process.
FIG. 21 is a perspective view showing a conventional exposure apparatus.
FIG. 22 is a diagram for explaining a conventional exposure method.
FIG. 23 is a diagram for explaining a conventional exposure method.
FIG. 24 is a diagram for explaining a conventional exposure method.
[Explanation of symbols]
60 (60a-60g) substrate side AF detection system
70 (70a to 70d) Mask side AF detection system
AL (AL1 to AL6) alignment system
EX exposure equipment
M mask
m1-m6 alignment mark
P Photosensitive substrate (substrate)
PA1 to PA9 Pattern formation area (exposure area)
PL (PLa to PLg) Projection optical system

Claims (11)

  1. In the exposure method of exposing the pattern of the mask to the substrate while synchronously moving the mask and the substrate in the first direction,
    According to a plurality of alignment systems, which are arranged in a second direction crossing the first direction, the detection of a plurality of alignment marks having different exposure areas on the substrate, a plurality of times by moving the substrate in the first direction And detecting the position of the substrate in a third direction orthogonal to the first and second directions by a detection system different from the plurality of alignment systems in parallel with the movement of the substrate in the first direction, An exposure method comprising exposing the pattern of the mask by the synchronous movement for each exposure region on the substrate based on detection results of the alignment system and the detection system .
  2. 2. The exposure method according to claim 1 , wherein the arrangement is changed by moving the alignment system in the second direction in accordance with the arrangement of the plurality of alignment marks .
  3. 3. The exposure method according to claim 1 , wherein a plurality of alignment marks in the different exposure areas are simultaneously detected by the plurality of alignment systems .
  4. 4. The mask pattern is exposed by exposing the plurality of exposure regions adjacent to each other in the second direction on the substrate to perform the synchronous movement in opposite directions. The exposure method according to item.
  5. In an exposure apparatus that exposes a pattern of the mask to the substrate while synchronously moving the mask and the substrate in a first direction,
    Disposed in a second direction crossing the first direction, and a plurality of alignment systems for detecting the alignment mark on the substrate,
    A detection system for detecting a position of the substrate in a third direction orthogonal to the first and second directions;
    The detection of a plurality of alignment marks in different exposure areas on the substrate by the plurality of alignment systems is performed a plurality of times by moving the substrate in the first direction, and the detection of the position of the substrate by the detection system is performed, A control device that performs in parallel with the movement of the substrate in the first direction ,
    An exposure apparatus that exposes the pattern of the mask by the synchronous movement for each exposure region on the substrate based on detection results of the alignment system and the detection system .
  6. The arrangement of the plurality of alignment systems is variable in the second direction, and the alignment system is moved in the second direction according to the arrangement of the plurality of alignment marks . Exposure device.
  7. 7. The exposure apparatus according to claim 5 , wherein a plurality of alignment marks in the different exposure areas are simultaneously detected by the plurality of alignment systems.
  8. The detection system, claims and detecting said first disposed apart from the plurality of alignment systems with respect to direction, and the third position of the second, respectively the substrate at different positions with respect to the direction Item 8. The exposure apparatus according to any one of Items 5 to 7.
  9. A projection optical system for projecting the mask pattern onto the substrate;
    The exposure apparatus according to claim 5, wherein the plurality of alignment systems, the detection system, and the projection optical system are arranged at different positions with respect to the first direction .
  10. A plurality of projection optical systems that are arranged at different positions with respect to the first direction and project the pattern of the mask onto the substrate;
    The exposure apparatus according to any one of claims 5 to 9, wherein at least one of the plurality of alignment systems is disposed between the plurality of projection optical systems.
  11. The device pattern drawn on the mask is exposed to the substrate using the exposure method according to any one of claims 1 to 4 or the exposure apparatus according to any one of claims 5 to 10. And a device manufacturing method comprising: developing the exposed substrate.
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JP2002148301A JP4168665B2 (en) 2002-05-22 2002-05-22 Exposure method, exposure apparatus, and device manufacturing method
TW092108905A TWI278722B (en) 2002-05-22 2003-04-17 Exposing method, exposing device and manufacturing method for device
KR20030031518A KR100979454B1 (en) 2002-05-22 2003-05-19 Light exposure method, light exposure equipment and method for manufacturing device
CN 200610161765 CN1983037B (en) 2002-05-22 2003-05-20 Exposure method, exposure device, and method of manufacturing device
CN 03136730 CN100524024C (en) 2002-05-22 2003-05-20 Exposure method, exposure apparatus and element mfg. method

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TWI574305B (en) 2006-01-19 2017-03-11 尼康股份有限公司 Exposure apparatus and exposure method, and component manufacturing method
JP5195417B2 (en) 2006-02-21 2013-05-08 株式会社ニコン Pattern forming apparatus, exposure apparatus, exposure method, and device manufacturing method
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TWI622084B (en) 2006-09-01 2018-04-21 Nikon Corp Mobile body driving method, moving body driving system, pattern forming method and device, exposure method and device, component manufacturing method, and correction method
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