CN102650819B - Photo mask and positioning method of photo mask - Google Patents
Photo mask and positioning method of photo mask Download PDFInfo
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- CN102650819B CN102650819B CN201110221058.5A CN201110221058A CN102650819B CN 102650819 B CN102650819 B CN 102650819B CN 201110221058 A CN201110221058 A CN 201110221058A CN 102650819 B CN102650819 B CN 102650819B
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- alignment mark
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Abstract
The invention discloses a photo mask and a positioning method of the photo mask, relating to the microelectronic field. With the invention, alignment and superposition of the pictures under multiple exposures to light can be realized through a single photo mask. The photo mask is provided with a reference alignment mark and an aligned alignment mark which is aligned with the reference alignment mark. The positioning method includes the following steps: exposing normally through the photo mask and making the alignment marks of the photo mask on a substrate, wherein the alignment marks of the photo mask include the reference alignment mark and the aligned alignment mark which is aligned with the reference alignment mark; moving the substrate until the aligned alignment mark on the substrate is aligned with the reference alignment mark on the photo mask; and setting the compensation value of an exposure machine, controlling the compensation of the exposure machine according to the compensation value inputted to the exposure machine so as to offset the distance between the aligned alignment mark on the substrate and the reference alignment mark on the photo mask, and conducting exposure process after the photo mask is aligned with the substrate.
Description
Technical field
The present invention relates to microelectronic, relate in particular to the localization method of a kind of mask plate and mask plate.
Background technology
In microelectronic industry chip manufacturing flow process, often need to be through photoetching process repeatedly, can realize the inregister of multi-layer graphical when exposing in each photoetching process, need to make multiple mask plates.For example, in order to realize the inregister of when double exposure figure, conventionally make two mask plates, and produce the alignment mark that can mutually mate on the same position of two mask plates.In described repeatedly photoetching process, sometimes also need a figure to carry out repeatedly repeated exposure.For example a figure is carried out to repeated exposure twice, prior art is as follows:
First need to make two mask plates, and produce the alignment mark that can mutually mate on the same position of two mask plates, as shown in Figure 1a, the position of the alignment mark 13 of the mask plate 14 of the use of exposing for the second time as shown in Figure 1 b in the position of the alignment mark 11 of the mask plate 12 of the use of exposing for the first time;
Prior art is carried out twice repeated exposure to a figure and is specially:
By using mask plate 12 to expose, the alignment mark on 12 11 is made on substrate for the first time, the alignment mark of producing on the metacoxal plate that exposes is for the first time 15; While using for the second time mask plate 14 to expose, first moving substrate, makes the alignment mark 15 on substrate carry out contraposition with the alignment mark 13 on mask plate 14, as shown in Fig. 1 c; Then complete exposure for the second time.
State in realization in the process of twice repeated exposure of a figure, inventor finds that in prior art, at least there are the following problems:
Even if same figure is repeatedly when repeated exposure, for the inregister of realizing figure also needs multiple mask plates.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of mask plate, and can adopt individual mask plate to realize repeated exposure time, figure aligns and coincides.
For solving the problems of the technologies described above, the embodiment of the present invention adopts following technical scheme:
A kind of mask plate,
Described mask plate is provided with benchmark alignment mark and the alignment mark of aiming at the contraposition of described benchmark alignment mark phase.
Described benchmark alignment mark is distributed in described mask plate both sides along described mask plate Central Symmetry.
Described benchmark alignment mark is at least one, respectively aims at alignment mark in the homonymy setting of the benchmark alignment mark of its contraposition.
A localization method for mask plate, comprising:
Use mask plate normal exposure, the alignment mark on described mask plate is all made on substrate, the alignment mark on described mask plate comprises benchmark alignment mark and the alignment mark of aiming at the contraposition of described benchmark alignment mark phase;
Moving substrate, by the aligning alignment mark on described substrate and the contraposition of described mask plate benchmark alignment mark phase;
The offset of exposure machine is set, according to the offset of the exposure machine of input, controls exposure machine and compensate, offset the spacing between the benchmark alignment mark on aligning alignment mark and the described mask plate on described substrate, complete the contraposition post-exposure of mask plate and substrate.
, control exposure machine and compensate according to the offset of the exposure machine of input described, the spacing between the benchmark alignment mark on described aligning alignment mark and described mask plate on offset substrate, the contraposition post-exposure that completes mask plate and substrate also comprises before:
Generate the offset of described exposure machine.
The offset of the described exposure machine of described generation, comprising:
Read the original offset of contraposition post-exposure machine;
According to benchmark alignment mark and the offset of aiming at distance values between alignment mark and relative position and described original offset and generate exposure machine.
Described benchmark alignment mark is distributed in described mask plate both sides along described mask plate Central Symmetry.
Described benchmark alignment mark is at least one, respectively aims at alignment mark in the homonymy setting of the benchmark alignment mark of its contraposition.
In embodiments of the present invention, by the mark that homogeneous exposure is not used, design on same mask plate, in the time of repeated exposure contraposition, utilize the exposure compensating of exposure machine, offset the spacing between the benchmark alignment mark on aligning alignment mark and the substrate on mask plate, while having realized repeated exposure with individual mask plate, figure aligns and coincides.
Accompanying drawing explanation
Fig. 1 a is expose for the first time structural representation of the alignment mark on the mask plate of use of prior art;
Fig. 1 b is expose for the second time structural representation of the alignment mark on the mask plate of use of prior art;
Fig. 1 c is the alignment situation schematic diagram of the prior art alignment mark on mask plate and alignment mark on substrate while exposing for the second time;
Fig. 2 is the structural representation one of the alignment mark on the embodiment of the present invention one mask plate;
Fig. 3 is the structural representation two of the alignment mark on the embodiment of the present invention one mask plate;
Fig. 4 is the structural representation three of the alignment mark on the embodiment of the present invention one mask plate;
Fig. 5 is the structural representation of the mask plate of use in the embodiment of the present invention two;
Fig. 6 is the localization method process flow diagram of the embodiment of the present invention two mask plates;
Fig. 7 is the structural representation of the mask plate of use in the embodiment of the present invention three;
Fig. 8 is the structural representation of the mask plate of use in the embodiment of the present invention four.
Reference numeral:
The 11-mark on the mask plate of use that exposes for the first time, expose for the first time mask plate of use of 12-,
The 13-mark on the mask plate of use that exposes for the second time, expose for the second time mask plate of use of 14-,
The 15-mark on metacoxal plate that exposes for the first time;
21-aims at alignment mark, 22-benchmark alignment mark, 23-mask plate.
Embodiment
Below in conjunction with accompanying drawing, the localization method of embodiment of the present invention mask plate and mask plate is described in detail.
Embodiment mono-
The embodiment of the present invention provides a kind of mask plate, and this mask plate is provided with benchmark alignment mark and the alignment mark of aiming at the contraposition of benchmark alignment mark phase.
Mask plate of the present invention, by the mark that homogeneous exposure is not used, designs on same mask plate; Use mask plate normal exposure, the alignment mark on mask plate is all made on substrate; While again exposure, first the aligning alignment mark on mask plate benchmark alignment mark and substrate is carried out to contraposition, again by adjusting hardware or the software of exposure machine equipment, change the relative position of mask plate and substrate, make up benchmark alignment mark on mask plate and and substrate on aim at the skew between alignment mark, while having realized repeated exposure with individual mask plate, figure aligns and coincides.
Further, as shown in Figure 2, benchmark alignment mark 22 is distributed in mask plate both sides along mask plate Central Symmetry; Described aligning alignment mark 21 is in a certain side setting of benchmark alignment mark 22 of its contraposition, and the aligning alignment mark 21 on mask plate is offset in position to some extent with benchmark alignment mark 22.
Use mask plate normal exposure, the alignment mark on mask plate is all made on substrate; While again exposure, first the aligning alignment mark on mask plate benchmark alignment mark 22 and substrate is carried out to contraposition, by adjusting hardware or the software of exposure machine equipment, change the relative position of mask plate and substrate, make up benchmark alignment mark 22 on mask plate and and substrate on aim at the skew between alignment mark, while having realized repeated exposure with individual mask plate, figure aligns and coincides.
The embodiment of the present invention also provides a kind of mask plate, be different from the mask plate shown in Fig. 2, aligning alignment mark 21 on mask plate is in the horizontal homonymy setting of the benchmark alignment mark 22 of its contraposition, as shown in Figure 3, the position of the aligning alignment mark 21 on mask plate and benchmark alignment mark 22 are only laterally having skew.
Use mask plate normal exposure, the alignment mark on mask plate is all made on substrate; While again exposure, first the aligning alignment mark on mask plate benchmark alignment mark 22 and substrate is carried out to contraposition, again by adjusting hardware or the software of exposure machine equipment, change mask plate and the horizontal relative position of substrate, make up benchmark alignment mark 22 on mask plate and and substrate on aim at the lateral excursion between alignment mark, while having realized repeated exposure with individual mask plate, figure aligns and coincides.
The embodiment of the present invention also provides a kind of mask plate, be different from the mask plate shown in Fig. 3, aim at alignment mark 21 in longitudinal homonymy setting of the benchmark alignment mark 22 of its contraposition, as shown in Figure 4, the position of the aligning alignment mark 21 on mask plate and benchmark alignment mark 22 are only longitudinally having skew.
Use mask plate normal exposure, the alignment mark on mask plate is all made on substrate; While again exposure, first the aligning alignment mark on mask plate benchmark alignment mark 22 and substrate is carried out to contraposition, again by adjusting hardware or the software of exposure machine equipment, substrate is longitudinally being moved relative to mask plate, change the relative position of mask plate and substrate, make up benchmark alignment mark 22 on mask plate and with the vertical misalignment between this two-layer mark of alignment mark of aiming on substrate, while having realized repeated exposure with individual mask plate, figure aligns and coincides.
Described in the invention described above embodiment, mask plate benchmark alignment mark is at least one.
Embodiment bis-
The embodiment of the present invention also provides a kind of localization method of mask plate, the mask plate that described in the present embodiment, localization method uses as shown in Figure 5, mask plate be provided with benchmark alignment mark 22 and with the contraposition of benchmark alignment mark phase aim at alignment mark 21, benchmark alignment mark 22 and the spacing of aiming between alignment mark 21 are horizontal spacing X, take Canon Canon exposure machine as example, specifically localization method is as shown in Figure 6:
Alignment mark on described mask plate comprises benchmark alignment mark 22 and aims at alignment mark 21, aims at alignment mark 21 and the 22 phase contrapositions of benchmark alignment mark.
In this step, continue to use the mask plate using in step 301.
In photoetching process, before exposure, carry out after contraposition, have many reasons can make in fact still to exist between alignment mark little deviation, the figure of mask plate and the figure of substrate can not inregisters, need in exposure process, compensate; The deviation result that chance for exposure is fed back according to measuring system in exposure process, automatically generate the exposure bias value of exposure machine, adjust again hardware or the software of equipment according to offset, substrate moves relative to mask plate, change the relative position of mask plate and substrate, realize the inregister of two layer patterns, then exposure.
The implementation procedure of above-mentioned compensate function not necessarily substrate moves, the present embodiment is for the convenient implementation procedure of considering to have simplified compensate function of narration, in actual implementation process, the specific implementation process of exposure machine compensate function may be different, may be for example that the substrate of exposure machine moves and optical system automatic fine tuning common realization that cooperatively interact, how the compensate function of exposure machine is specifically realized affect practical application of the present invention.
The present invention is by the mark that homogeneous exposure is not used, design on same mask plate, when exposure, utilize the compensate function of exposure machine, offset is set, just can make up benchmark alignment mark 22 on mask plate and and substrate on aim at the skew between alignment mark, realize the inregister of mask plate and substrate two layer patterns.
Further, the offset generative process of exposure machine described in step 303 comprises:
Read the original offset of contraposition post-exposure machine, lateral coordinates X0, along slope coordinate Y0;
According to benchmark alignment mark and the offset of aiming at distance values between alignment mark and relative position and described original offset and generate exposure machine, in the present embodiment, on described mask plate, aim at alignment mark 21 and be positioned at laterally left side of described benchmark alignment mark 22, described benchmark alignment mark 22 and the spacing of aiming between alignment mark 21 are horizontal spacing X, and longitudinal pitch is 0;
On described mask plate, aim at alignment mark 21 and be positioned at laterally left side of described benchmark alignment mark 22, the offset that generates exposure machine is lateral coordinates-X+X0, along slope coordinate 0+Y0;
If above-mentioned aligning alignment mark 21 is positioned at the horizontal right side of described benchmark alignment mark 22, the offset that generates exposure machine is lateral coordinates+X+X0, along slope coordinate 0+Y0;
Although different exposure machines, the generation meeting of offset is different, and only the X in the offset of input has positive and negative dividing, and therefore in actual production process, the generation of above-mentioned offset also can be taked following method:
The random X of determining is positive and negative adds that original offset generates offset, after input offset value, tests, and then determines offset according to test result; If offset input lateral coordinates+X+X0, along slope coordinate 0+Y0, after exposure, test result display graphics deviation is larger, and the offset generating should be lateral coordinates-X+X0, along slope coordinate 0+Y0.
Exposure machine is adjusted the hardware device such as movement and optical system of the base station of exposure machine according to the offset of input, on original exposure compensating basis, make the relative mask plate of substrate laterally be moved to the left X again, offset the spacing between the aligning alignment mark on mask plate benchmark alignment mark 22 and institute's substrate, complete the aligning and coinciding of figure of mask plate and substrate; And then exposure.
In microelectronic industry chip manufacturing flow process, often need carry out repeatedly repeated exposure to a figure, repeating step 302 is to step 304 or repeating step 301 to step 304, just can realize the coincidence with same mask plate figure when the repeated exposure repeatedly.
Embodiment tri-
The localization method of a kind of mask plate of the present invention, another specific embodiment is as follows:
The mask plate that described in the present embodiment, localization method uses as shown in Figure 7, mask plate be provided with benchmark alignment mark 22 and with the contraposition of benchmark alignment mark phase aim at alignment mark 21, benchmark alignment mark 22 and the spacing of aiming between alignment mark 21 are longitudinal pitch Y.
In the present embodiment, concrete steps and embodiment bis-are basic identical, and difference is,
In step 303, the offset difference of the exposure machine of generation;
In step 304, in compensating parameter position, the offset that in input, step 303 generates, exposure machine is adjusted the hardware device such as movement and optical system of the base station of exposure machine according to the offset of input, on original exposure compensating basis, make the relative mask plate of substrate vertically move Y again, offset the spacing between the aligning alignment mark on mask plate benchmark alignment mark 22 and substrate, complete the aligning and coinciding of figure of mask plate and substrate; And then exposure.
Embodiment tetra-
The localization method of a kind of mask plate of the present invention, another concrete embodiment is as follows:
The mask plate that described in the present embodiment, localization method uses as shown in Figure 8, mask plate be provided with benchmark alignment mark 22 and with the contraposition of benchmark alignment mark phase aim at alignment mark 21, benchmark alignment mark 22 and the spacing of aiming between alignment mark 21 are horizontal spacing X1, longitudinal pitch Y1.
In the present embodiment, concrete steps and embodiment bis-are basic identical, and difference is,
In step 303, the offset difference of the exposure machine of generation;
In step 304, in compensating parameter position, the offset that input step 303 generates, exposure machine is adjusted the hardware device such as movement and optical system of the base station of exposure machine according to the offset of input, on original exposure compensating basis, make the relative mask plate of substrate again at transverse shifting X1, vertically moving Y1, offset horizontal spacing and longitudinal pitch between the aligning alignment mark on mask plate benchmark alignment mark 22 and substrate, complete the aligning and coinciding of figure of mask plate and substrate; And then exposure.
The localization method of mask plate of the present invention, uses and is provided with benchmark alignment mark and the mask plate of aiming at alignment mark with the contraposition of benchmark alignment mark phase, uses mask plate normal exposure, and the alignment mark on mask plate is all made on substrate; While again exposure, utilize the exposure compensating of exposure machine to offset the spacing between alignment mark, while having realized repeated exposure with individual mask plate, the location of figure overlaps.
Although the embodiment of the present invention relates to field of liquid crystals, application of the present invention should be not limited to this, also can be applicable to the microelectronic such as plasma, semiconductor.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, any be familiar with those skilled in the art the present invention disclose technical scope in; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should described be as the criterion with the protection domain of claim.
Claims (5)
1. a localization method for mask plate, is characterized in that, comprising:
Use mask plate normal exposure, the alignment mark on described mask plate is all made on substrate, the alignment mark on described mask plate comprises benchmark alignment mark and the alignment mark of aiming at the contraposition of described benchmark alignment mark phase;
Moving substrate, by the aligning alignment mark on described substrate and the contraposition of described mask plate benchmark alignment mark phase;
The offset of exposure machine is set, according to the offset of the exposure machine of input, controls exposure machine and compensate, offset the spacing between the benchmark alignment mark on aligning alignment mark and the described mask plate on described substrate, complete the contraposition post-exposure of mask plate and substrate.
2. method according to claim 1, it is characterized in that, described according to the offset of exposure machine of input, control exposure machine compensates, spacing between the benchmark alignment mark on described aligning alignment mark and described mask plate on offset substrate, the contraposition post-exposure that completes mask plate and substrate also comprises before:
Generate the offset of described exposure machine.
3. method according to claim 2, is characterized in that, the offset of the described exposure machine of described generation, comprising:
Read the original offset of contraposition post-exposure machine;
According to benchmark alignment mark and the offset of aiming at distance values between alignment mark and relative position and described original offset and generate exposure machine.
4. method according to claim 1 and 2, is characterized in that, described benchmark alignment mark is distributed in described mask plate both sides along described mask plate Central Symmetry.
5. method according to claim 4, is characterized in that, described benchmark alignment mark is at least one, respectively aims at alignment mark in the homonymy setting of the benchmark alignment mark of its contraposition.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110221058.5A CN102650819B (en) | 2011-08-03 | 2011-08-03 | Photo mask and positioning method of photo mask |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110221058.5A CN102650819B (en) | 2011-08-03 | 2011-08-03 | Photo mask and positioning method of photo mask |
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| CN102650819B true CN102650819B (en) | 2014-07-02 |
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| CN102866604A (en) * | 2012-09-17 | 2013-01-09 | 上海华力微电子有限公司 | Mask plate alignment mark arrangement method |
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| CN103901740A (en) * | 2012-12-24 | 2014-07-02 | 上海华虹宏力半导体制造有限公司 | Placement method of lithography alignment mark |
| CN103969943A (en) * | 2013-01-25 | 2014-08-06 | 北京京东方光电科技有限公司 | Method for marking substrate |
| CN104281008B (en) * | 2013-07-02 | 2016-08-31 | 欣兴电子股份有限公司 | exposure image compensation method |
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| CN105629683B (en) * | 2014-11-21 | 2018-04-03 | 昆山工研院新型平板显示技术中心有限公司 | The alignment method of exposure machine |
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| CN106707682A (en) * | 2017-01-05 | 2017-05-24 | 京东方科技集团股份有限公司 | Mask plate, exposure device and method for carrying out exposure by exposure device |
| CN107359285B (en) * | 2017-08-18 | 2019-03-15 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display and preparation method thereof |
| US10510959B2 (en) | 2017-08-22 | 2019-12-17 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Commissioning method and vapor deposition machine |
| CN107523787B (en) * | 2017-08-22 | 2019-08-02 | 武汉华星光电半导体显示技术有限公司 | A kind of adjustment method and evaporator |
| CN108776406B (en) * | 2018-05-29 | 2021-06-01 | 武汉华星光电技术有限公司 | Preparation substrate of color filter and manufacturing method of color filter substrate |
| CN109285972B (en) * | 2018-09-28 | 2021-01-22 | 京东方科技集团股份有限公司 | Position adjusting method and device for luminescent material |
| EP4067995A4 (en) * | 2019-11-29 | 2023-01-11 | BOE Technology Group Co., Ltd. | Alignment mark, mask, and display substrate master |
| CN113867043B (en) * | 2020-06-30 | 2023-01-10 | 京东方科技集团股份有限公司 | Light-emitting substrate, preparation method thereof and display device |
| CN112327534B (en) * | 2020-12-03 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | Substrate pair marking method, display panel and display device |
| CN114200797B (en) * | 2021-12-14 | 2022-11-22 | 南京大学 | Mask for splicing and aligning nano-imprint metal grating and metal grating splicing method |
| CN114488704B (en) * | 2021-12-15 | 2024-04-02 | 惠州市金百泽电路科技有限公司 | Method for detecting and correcting pattern splicing error of photoetching machine based on DMD |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983037A (en) * | 2002-05-22 | 2007-06-20 | 尼康株式会社 | Exposure method, exposure device, and method of manufacturing device |
| CN101661220A (en) * | 2008-08-27 | 2010-03-03 | 北京京东方光电科技有限公司 | Liquid crystal display panel and mask plate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7160654B2 (en) * | 2003-12-02 | 2007-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of the adjustable matching map system in lithography |
-
2011
- 2011-08-03 CN CN201110221058.5A patent/CN102650819B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983037A (en) * | 2002-05-22 | 2007-06-20 | 尼康株式会社 | Exposure method, exposure device, and method of manufacturing device |
| CN101661220A (en) * | 2008-08-27 | 2010-03-03 | 北京京东方光电科技有限公司 | Liquid crystal display panel and mask plate |
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