CN110531591A - Alignment precision modification method - Google Patents
Alignment precision modification method Download PDFInfo
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- CN110531591A CN110531591A CN201910818292.2A CN201910818292A CN110531591A CN 110531591 A CN110531591 A CN 110531591A CN 201910818292 A CN201910818292 A CN 201910818292A CN 110531591 A CN110531591 A CN 110531591A
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- mask plate
- alignment
- alignment precision
- modification method
- exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention provides a kind of alignment precision modification method, comprising: provides a mask plate for being formed with mask plate patterns and Cutting Road formation area, and is formed in area in the Cutting Road and at least 8 pairs of alignment marks are arranged；The mask plate is exposed using exposure bench；Collect alignment mark data all in exposure area；According to the overlay error data in exposure area described in the alignment mark data acquisition；According to the photolithographic parameters of the overlay error data point reuse exposure bench to correct alignment precision.At least 8 pairs of alignment marks are set in Cutting Road formation area to obtain the overlay error data in exposure area to introduce the correction amount of high order, the higher-order revision inside exposure area can be realized on the basis of linear modified, to reduce overlay error, alignment precision is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of alignment precision modification method.
Background technique
With the continuous diminution of dimensions of semiconductor devices, requirement of the device to overlay alignment is higher, in current alignment essence
In degree amendment, for the dielectric layer for needing to carry out ion implanting or etching, in exposure area, mask plate and dielectric layer
Upper correspondence only has a pair of of alignment mark, and the amendment obtained by the alignment mark can only linearly be corrected, to exposure area inside
Smaller unit can not be corrected, and the common linear amendment of exposure bench can not correct actual grid and ideal grid well
Error.
This field common practice is corrected inside exposure area by the result of overlay error measurement at present, will be compensated
Data feedback is to the exposure system of litho machine, and exposure system is by revised data application in ion implanting or to be etched
Dielectric layer.Have in the logical device of 28 nanometers of low-power 18-20 layers of dielectric layer needed after photoetching process ion implanting or
It etches, one photoresist layer of first spin coating on every layer of dielectric layer, it is complete then to measure the overlay error on photoresist layer using exposure system
The overlay error global data is then fed back to litho machine to realize that manual correction, such alignment precision are repaired by office data
Correction method is comparatively laborious and is easy to appear fault.In addition, the alignment performance of different litho machines is not fully, it need to be exposure mask
The various combinations of version provide corresponding amendment, while maintenance, the optical system maintenance of litho machine workbench may be to errors
Amendment has an impact that receipts value is needed again to correct.
Therefore a kind of new alignment precision modification method is needed to realize high-precision amendment, reduces overlay error.
Summary of the invention
The purpose of the present invention is to provide a kind of alignment precision modification methods, and overlay error is excessive when solving photoetching asks
Topic.
In order to solve the above technical problems, the present invention provides a kind of alignment precision modification method, comprising:
One mask plate is provided, mask plate patterns are formed on the mask plate and Cutting Road forms area；
It is formed in area in the Cutting Road and at least 8 pairs of alignment marks is set；
The mask plate is exposed using exposure bench；
Collect each pair of alignment mark data in exposure area；
According to the overlay error data in exposure area described in the alignment mark data acquisition；
According to the photolithographic parameters of the overlay error data point reuse exposure bench to correct alignment precision.
Optionally, in the alignment precision modification method, the quantity of the mask plate patterns is more than or equal to 1.
Optionally, in the alignment precision modification method, the Cutting Road forms area and is distributed in the mask plate patterns
Surrounding.
Optionally, in the alignment precision modification method, the quantity of the mask plate patterns be it is multiple, it is multiple described to cover
Film domain shape is distributed by dot matrix, and the adjacent mask plate patterns share the Cutting Road shape between the mask plate patterns
At the alignment mark in area.
Optionally, in the alignment precision modification method, the Cutting Road on the mask plate forms Qu Zhongshe
8 pairs of alignment marks are set to realize the second order amendment of alignment precision.
Optionally, in the alignment precision modification method, the Cutting Road on the mask plate forms Qu Zhongshe
10 pairs of alignment marks are set to realize the three ranks amendment of alignment precision.
Optionally, in the alignment precision modification method, each pair of alignment mark includes: first direction alignment mark
And second direction alignment mark, the first direction and the second direction are perpendicular.
Optionally, in the alignment precision modification method, according to exposure area described in the alignment mark data acquisition
After interior overlay error data, the alignment precision modification method further include: record and store institute using the exposure bench
State the alignment precision that overlay error data enable the overlay error data to correct like products.
Optionally, in the alignment precision modification method, the mask plate is exposed using deep ultraviolet light.
Optionally, in the alignment precision modification method, before being exposed using exposure bench to the mask plate,
The alignment precision modification method further include:
A photoresist layer is formed in a substrate surface.
Optionally, in the alignment precision modification method, the mask plate is exposed using exposure bench so that
The mask plate patterns are transferred on the photoresist layer of exposure area, to obtain patterned photoresist layer.
Optionally, in the alignment precision modification method, according to the overlay error data point reuse exposure bench
After photolithographic parameters are to correct alignment precision, the alignment precision modification method further include:
Using the patterned photoresist layer as exposure mask, ion implanting is carried out to the substrate.
Optionally, in the alignment precision modification method, according to the overlay error data point reuse exposure bench
After photolithographic parameters are to correct alignment precision, the alignment precision modification method further include:
Using the patterned photoresist layer as exposure mask, the substrate is performed etching with by the mask plate patterns
It is transferred on the substrate.
To sum up, the present invention provides a kind of alignment precision modification method, comprising: provides one and is formed with mask plate patterns and cutting
The mask plate in road formation area, and formed in area in the Cutting Road and at least 8 pairs of alignment marks are set；Using exposure bench to described
Mask plate is exposed；Collect alignment mark data all in exposure area；According to the alignment mark data acquisition
Overlay error data in exposure area；According to the photolithographic parameters of the overlay error data point reuse exposure bench to correct alignment
Precision.The Cutting Road formed area at least 8 pairs of alignment marks are set obtain the overlay error data in exposure area with
The correction amount of high order is introduced, the higher-order revision inside exposure area can be realized on the basis of linear modified, to reduce
Overlay error, improves alignment precision.
Detailed description of the invention
Fig. 1 is the flow chart of the alignment precision modification method of the embodiment of the present invention；
Fig. 2 is a kind of mask plate schematic diagram of the embodiment of the present invention；
Fig. 3 is the exposing wafer area schematic of the embodiment of the present invention；
Fig. 4 is any one alignment mark schematic diagram of the embodiment of the present invention；
Fig. 5 is another mask plate schematic diagram of the embodiment of the present invention；
Fig. 6 is the mask plate schematic diagram for any mask plate patterns setting alignment mark of the embodiment of the present invention；
Wherein, description of symbols:
10- mask plate, 11- mask plate patterns, 12- Cutting Road formed area, 121- alignment mark, 21,23,25,1211,
1213,1215- first direction alignment mark, 22,24,26,1212,1214,1216- second direction alignment mark.
Specific embodiment
Alignment precision modification method proposed by the present invention is made further specifically below in conjunction with the drawings and specific embodiments
It is bright.According to following explanation and claims, advantages and features of the invention will be become apparent from.It should be noted that attached drawing is all made of
Very simplified form and use non-accurate ratio, only to it is convenient, lucidly aid in illustrating the mesh of the embodiment of the present invention
's.In addition, the structure that attached drawing is shown is often a part of practical structures.Particularly, each attached drawing needs the emphasis shown
Difference uses different ratios sometimes.
The naive model of currently available technology is exactly linear correction model, is typically used for 6 parameters: the translation of X and Y-direction
Parameter；The contraction or amplifying parameters of X and Y-direction；Rotation parameter；Diagonal warp parameters.But this 6 parameters are not enough to describe
The deviation of reference layer actual grid and ideal grid, so alignment precision modification method provided by the invention introduces higher-order revision,
Higher-order revision amount is introduced on the basis of linear modified, i.e., adds some other important parameter in amendment to realize two
The higher-order revisions such as rank, three ranks and quadravalence.
The present invention provides a kind of alignment precision modification method, repairs with reference to the alignment precision that Fig. 1, Fig. 1 are the embodiment of the present invention
The flow chart of correction method, is a kind of mask plate schematic diagram of the embodiment of the present invention in conjunction with Fig. 2 and Fig. 3, Fig. 2, and Fig. 3 is of the invention real
The alignment precision modification method provided by the invention is discussed in detail in the exposing wafer area schematic for applying example.
S10: providing a mask plate 10, and mask plate patterns 11 are formed on the mask plate 10 and Cutting Road forms area 12.
Specifically, the Cutting Road forms area 12 and is distributed as shown in Fig. 2, the quantity of the mask plate patterns 11 is more than or equal to 1
In the surrounding of the mask plate patterns 10, the quantity of the mask plate patterns 11 be it is multiple, multiple mask plate patterns 11 are pressed
Dot matrix distribution, the Cutting Road form area 12 and mask plate 10 are divided into closed cell small one by one, and the present embodiment is to be arranged
For the mask plate for having 4 mask plate patterns, the mask plate corresponds to an exposure area on wafer, each exposure on wafer
2 × 2 die are set in light region, i.e., each corresponding mask plate patterns of die, 4 mask plate patterns 11 press point
Configuration distribution, i.e., arranged by recurring rule.
S20: it is formed in area 12 in the Cutting Road and at least 8 pairs of alignment marks is set.It is implementation of the present invention with reference to Fig. 4, Fig. 4
Any one alignment mark schematic diagram of example, common any one that the alignment mark 121 can be the art are right
Fiducial mark note.Specifically, at least 8 pairs of alignment marks, Mei Duisuo is arranged in the Cutting Road formation area 12 of the mask plate 10
Stating alignment mark includes: first direction alignment mark and second direction alignment mark, the first direction and the second direction
Perpendicular, in the present embodiment, the first direction is, for example, X-direction, and the second direction is, for example, Y-direction, such as Fig. 2 institute
Show, the Cutting Road of the mask plate 10 is formed one in area 12 (Cutting Road between 4 mask plate patterns 11 forms area)
It is provided with 16 alignment marks 121 altogether, adjacent mask plate patterns share 2 alignment marks between them.It is same
2 alignment marks in X-direction above mask plate patterns and 2 alignment marks in the Y-direction on the left of it constitute two pairs, together
2 alignment marks in X-direction below one mask plate patterns and 2 alignment marks in the Y-direction on the right side of it constitute two
It is right, in addition it is also possible to be in 2 alignment marks in the X-direction above the same mask plate patterns and the Y-direction on the right side of it
2 alignment marks constitute two pairs, 2 alignment marks in X-direction below the same mask plate patterns and the Y-direction on the left of it
On 2 alignment marks constitute 2 pairs, for example, first direction alignment mark 21 and second direction alignment mark 22 constitute a pair of of institute
Alignment mark is stated, first direction alignment mark 23 and second direction alignment mark 24 constitute a pair of alignment mark, first party
A pair of alignment mark is constituted to alignment mark 25 and second direction alignment mark 26, and so on, on the mask plate
Alignment mark accordingly forms 8 pairs by X-direction and Y-direction.It is right that 8 pairs and 8 pairs of setting or more in area 12 is formed in the Cutting Road
Fiducial mark note, and is aligned one by one using exposure bench, and overlay error can be made to be less than 1um, improve alignment precision, can be with
The higher-order revision inside exposure area for realizing wafer on the basis of linear modified.The cutting on each mask plate 10
8 pairs of alignment marks are arranged in road formation area 12 may be implemented the second order amendment of alignment precision.It is corresponding, it is formed in the Cutting Road
10 pairs of alignment marks are arranged in area 12 may be implemented the three ranks amendment of alignment precision, and so on, the alignment of 10 pairs of setting or more
Label just can be realized the higher-order revision of the correspondence order of alignment precision.
It further, is another mask plate schematic diagram of the embodiment of the present invention with reference to Fig. 5, Fig. 5, the present invention can also be right
Each mask plate patterns 11 is respectively provided at least 8 pairs of alignment marks, as shown in figure 5, the surrounding of each mask plate patterns 11
Be provided with 16 alignment marks 121, two adjacent mask plate patterns share 4 alignment marks between them, i.e., on
The mask plate patterns of a line and the mask plate patterns of next line share 4 alignment marks between them, the mask plate of previous column
The mask plate patterns of figure and latter column share 4 alignment marks between them.X-direction above the mask plate patterns 11
On four alignment marks and the left side of mask plate patterns 11 Y-direction on four alignment marks constitute 4 pairs, the exposure mask
Four alignments in the Y-direction on 11 right side of four alignment marks and the mask plate patterns in the X-direction below domain shape 11
Label constitutes 4 pairs, for example, first direction alignment mark 1211 and second direction alignment mark 1212 constitute it is a pair of described to fiducial mark
Note, first direction alignment mark 1213 and second direction alignment mark 1214 constitute a pair of alignment mark, first direction pair
Fiducial mark note 1215 and second direction alignment mark 1216 constitute a pair of alignment mark, and so on, the mask plate patterns
The alignment mark of 11 surroundings accordingly forms 8 pairs by X-direction and Y-direction.Described in each 11 surrounding of mask plate patterns
Cutting Road forms in area 12 and is respectively provided with 8 pairs to fiducial mark, can further increase alignment precision.
Further, referring to FIG. 6, Fig. 6 is the embodiment of the present invention for any mask plate patterns setting alignment mark
Mask plate schematic diagram, the present invention can also be arranged at least 8 pairs for any one mask plate patterns 11 on mask plate
Alignment mark, as can be known from Fig. 5 and Fig. 6, Fig. 5 are that 8 pairs of alignments are all arranged for all mask plate patterns on mask plate
Label, Fig. 6 is that 8 pairs of alignment marks are arranged for any one mask plate patterns on mask plate, in any reticle pattern
The Cutting Road of 11 surrounding of shape forms in area 12 and at least 8 pairs of alignment marks is arranged, and can realize on the basis of linear modified
The higher-order revision of any mask plate patterns 11 inside exposure area improves alignment essence to reduce overlay error
Degree, improves product yield.
S30: the mask plate 10 is exposed using exposure bench.Specifically, choosing a substrate to be exposed work
Skill, the substrate include silicon base and the dielectric layer that is formed in the silicon base, wherein the dielectric layer is subsequent for example can be with
Execute ion implantation technology or etching technics.Before being exposed using exposure bench to the mask plate 10, the alignment
Precision correcting method further include: form a photoresist layer in the substrate surface.The photoresist layer covers the dielectric layer,
In, the mask plate 10 is exposed so that the mask plate patterns 11 are transferred to described in exposure area using exposure bench
On photoresist layer, to obtain patterned photoresist layer, forming the photoresist layer is in order to complete photoetching process, in order to by shape
At patterned photoresist layer be transferred on the dielectric layer and prepare, when exposure, correspond to if being formed on photoresist layer
Do several units of the mask plate patterns, exposure bench is according to the alignment precisions of several units inside exposure area when exposure
Independent higher-order revision is carried out, the overlay error data that post-exposure board obtains directly apply to unit itself, improve processing procedure
Stability and automatization level.In the present embodiment, the mask plate 10 is exposed using deep ultraviolet light, utilizes deep ultraviolet
Light carries out the precision that photoetching can be improved the critical size of patterned photoresist layer to the photoresist layer.
S40: each pair of alignment mark data in exposure area are collected.
S50: according to the overlay error data in exposure area described in the alignment mark data acquisition.Wherein, according to institute
After stating the overlay error data in exposure area described in alignment mark data acquisition, the exposure bench record can use simultaneously
The alignment precision that the overlay error data enable the overlay error data to correct like products is stored, is stored in described
The overlay error data of exposure bench form a file, and several units of subsequent same product same layer can call directly this file
High-order correction is carried out, that is, is directed to like products, the overlay error data general-purpose.The overlay error number of exposure bench storage
According to the alignment precision that can correct like products, so there is no need to repeat to do every time on identical product overlay alignment with
And the step of collecting each pair of alignment mark data in exposure area, reduces overlay error amendment to improve work efficiency
Workload.
S60: according to the photolithographic parameters of the overlay error data point reuse exposure bench to correct alignment precision.It is arranged several
The overlay error data in exposure area are obtained to alignment mark to introduce the correction amount of high order, it can be linear modified
On the basis of realize exposure area inside higher-order revision improve alignment precision to reduce overlay error.
Further, according to the photolithographic parameters of the overlay error data point reuse exposure bench with correct alignment precision it
Afterwards, if executing ion implantation technology, the alignment precision modification method further include: made using the patterned photoresist layer
For exposure mask, ion implanting is carried out to the dielectric layer of the substrate.The pattern obtained using mask plate 10 provided by the invention
Crucial ruler of the critical size precision of the photoresist layer of change compared to the patterned photoresist layer obtained using common mask plate
Very little precision is higher, so that the position for carrying out ion implanting to the dielectric layer is more accurate, avoids ion implanting offset
The case where.
In addition, according to the photolithographic parameters of the overlay error data point reuse exposure bench to correct alignment precision after,
If executing etching technics, the alignment precision modification method further include: using the patterned photoresist layer as exposure mask,
The substrate is performed etching to be transferred to the mask plate patterns on the dielectric layer of the substrate.Using provided by the invention
The critical size precision for the patterned photoresist layer that mask plate 10 obtains is compared to the figure obtained using common mask plate
The critical size precision of the photoresist layer of case is higher, to improve the etching precision of dielectric layer, avoids etch bias
Situation.
To sum up, the present invention provides a kind of alignment precision modification method, comprising: provides one and is formed with mask plate patterns and cutting
The mask plate in road formation area, and formed in area in the Cutting Road and at least 8 pairs of alignment marks are set；Using exposure bench to described
Mask plate is exposed；Collect alignment mark data all in exposure area；According to the alignment mark data acquisition
Overlay error data in exposure area；According to the photolithographic parameters of the overlay error data point reuse exposure bench to correct alignment
Precision.The Cutting Road formed area at least 8 pairs of alignment marks are set obtain the overlay error data in exposure area with
The correction amount of high order is introduced, the higher-order revision inside exposure area can be realized on the basis of linear modified, to reduce
Overlay error, improves alignment precision.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (13)
1. a kind of alignment precision modification method characterized by comprising
One mask plate is provided, mask plate patterns are formed on the mask plate and Cutting Road forms area；
It is formed in area in the Cutting Road and at least 8 pairs of alignment marks is set；
The mask plate is exposed using exposure bench；
Collect each pair of alignment mark data in exposure area；
According to the overlay error data in exposure area described in the alignment mark data acquisition；
According to the photolithographic parameters of the overlay error data point reuse exposure bench to correct alignment precision.
2. alignment precision modification method according to claim 1, which is characterized in that the quantity of the mask plate patterns is greater than
Or it is equal to 1.
3. alignment precision modification method according to claim 2, which is characterized in that the Cutting Road forms area and is distributed in institute
State the surrounding of mask plate patterns.
4. alignment precision modification method according to claim 3, which is characterized in that the quantity of the mask plate patterns is more
A, multiple mask plate patterns are distributed by dot matrix, and the adjacent mask plate patterns are shared between the mask plate patterns
The Cutting Road formed area in the alignment mark.
5. alignment precision modification method according to claim 3, which is characterized in that the cutting on the mask plate
8 pairs of alignment marks are set in road formation area to realize the second order amendment of alignment precision.
6. alignment precision modification method according to claim 3, which is characterized in that the cutting on the mask plate
10 pairs of alignment marks are set in road formation area to realize the three ranks amendment of alignment precision.
7. alignment precision modification method according to claim 5 or 6, which is characterized in that each pair of alignment mark includes:
First direction alignment mark and second direction alignment mark, the first direction and the second direction are perpendicular.
8. alignment precision modification method according to claim 1, which is characterized in that according to the alignment mark data acquisition
After overlay error data in the exposure area, the alignment precision modification method further include: utilize the exposure bench
Record and store the alignment precision that the overlay error data enable the overlay error data to correct like products.
9. alignment precision modification method according to claim 1, which is characterized in that using deep ultraviolet light to the mask plate
It is exposed.
10. alignment precision modification method according to claim 1, which is characterized in that using exposure bench to the exposure mask
Before version is exposed, the alignment precision modification method further include:
A photoresist layer is formed in a substrate surface.
11. alignment precision modification method according to claim 10, which is characterized in that using exposure bench to the exposure mask
Version is exposed so that the mask plate patterns are transferred on the photoresist layer of exposure area, to obtain patterned photoetching
Glue-line.
12. alignment precision modification method according to claim 11, which is characterized in that according to the overlay error data
After the photolithographic parameters of adjustment exposure bench are to correct alignment precision, the alignment precision modification method further include:
Using the patterned photoresist layer as exposure mask, ion implanting is carried out to the substrate.
13. alignment precision modification method according to claim 11, which is characterized in that according to the overlay error data
After the photolithographic parameters of adjustment exposure bench are to correct alignment precision, the alignment precision modification method further include:
Using the patterned photoresist layer as exposure mask, the substrate is performed etching to shift the mask plate patterns
On to the substrate.
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| CN111158217A (en) * | 2020-01-02 | 2020-05-15 | 长江存储科技有限责任公司 | Method and system for determining overlay deviation |
| CN111158217B (en) * | 2020-01-02 | 2022-06-21 | 长江存储科技有限责任公司 | Method and system for determining overlay deviation |
| CN114167687A (en) * | 2020-09-10 | 2022-03-11 | 中国科学院微电子研究所 | Overlay error dynamic sampling measurement method and device |
| CN114167687B (en) * | 2020-09-10 | 2024-04-16 | 中国科学院微电子研究所 | Dynamic sampling measurement method and device for overlay error |
| CN112612178A (en) * | 2020-12-21 | 2021-04-06 | 上海华力微电子有限公司 | Mark for monitoring opening precision of photoetching machine shading sheet and use method thereof |
| CN114171500A (en) * | 2021-12-07 | 2022-03-11 | 成都海威华芯科技有限公司 | Layout positioning mark drawing method, chip and wafer prepared based on layout positioning mark drawing method |
| CN114185252A (en) * | 2021-12-07 | 2022-03-15 | 中山大学南昌研究院 | Method for reducing exposure accumulated error |
| CN114171500B (en) * | 2021-12-07 | 2024-04-09 | 成都海威华芯科技有限公司 | Layout positioning mark drawing method, chip prepared based on layout positioning mark drawing method and wafer |
| CN114545743A (en) * | 2022-02-21 | 2022-05-27 | 合肥晶合集成电路股份有限公司 | Overlay error compensation method |
| CN116736652B (en) * | 2023-08-11 | 2023-10-27 | 江苏芯德半导体科技有限公司 | Process method for exposure alignment in multilayer high-density packaging |
| CN116736652A (en) * | 2023-08-11 | 2023-09-12 | 江苏芯德半导体科技有限公司 | Process method for exposure alignment in multilayer high-density packaging |
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