CN114460819B - Alignment mark for electron beam exposure and preparation method thereof - Google Patents
Alignment mark for electron beam exposure and preparation method thereof Download PDFInfo
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- CN114460819B CN114460819B CN202210042527.5A CN202210042527A CN114460819B CN 114460819 B CN114460819 B CN 114460819B CN 202210042527 A CN202210042527 A CN 202210042527A CN 114460819 B CN114460819 B CN 114460819B
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 156
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 239000002184 metal Substances 0.000 claims abstract description 47
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000011161 development Methods 0.000 claims description 9
- 230000035945 sensitivity Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
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- 238000013461 design Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
Abstract
The application provides an alignment mark for electron beam exposure and a preparation method thereof, wherein the preparation method comprises the following steps: covering photoresist on the substrate; exposing and developing the photoresist in a predetermined shape to remove a portion of the photoresist on the substrate, thereby forming a pattern having the predetermined shape; thermally expanding the photoresist remaining on the substrate while depositing metal on the substrate and the photoresist remaining on the substrate; and removing the photoresist remaining on the substrate and the metal deposited thereon, thereby obtaining a deposited metal having the predetermined shape on the substrate. According to the technical scheme, the alignment effect of the alignment mark is improved.
Description
Technical Field
The application relates to the technical field of lithography, in particular to an alignment mark for electron beam exposure and a preparation method thereof.
Background
In the graphic exposure (lithography), material etching, film formation, ion implantation, bonding and interconnection, among these processing technologies, the graphic exposure technology is a major driver for the development of microelectronic manufacturing technologies, and it is due to the continuous improvement of the resolution and overlay accuracy of the exposed graphic, which promotes the continuous improvement of the integrated circuit integration level and continuous reduction of the manufacturing cost. Electron beam exposure technology is a key technology for promoting the development of microelectronics and micro-nano processing, and plays an irreplaceable role in the field of nano-fabrication.
The electron beam exposure is a technique for directly drawing or projecting a copied pattern on a wafer coated with photoresist by using an electron beam, and is characterized by short wavelength of the electron beam, high resolution (the limit resolution can reach 3-8 nm), easy pattern generation and modification and short manufacturing period. Electron beam exposure is one of the most interesting next generation lithography technologies in terms of its high resolution, stable performance, powerful functions, and relatively low cost.
In micro-nano manufacturing of semiconductor devices, electron beam exposure is often needed to be used for manufacturing a device for several times or even ten times, and factors influencing the error of the electron beam exposure process include the resolution of an electron beam lithography machine and the precision of an electron resist, and the precision of alignment between lithography patterns of different layers in the device manufacturing process. Overlay accuracy between multi-step exposures is often a critical parameter for device performance. In addition, the deflection amplitude of the system electron beam needs to be adjusted to match the specific write field size used, which is the write field calibration. In practical applications, high quality alignment marks are required for either overlay or write field calibration.
Alignment marks are commonly used in electron beam lithography, and are generally formed by protrusions or grooves having a cross shape, a circular shape, a square shape, or an L shape, including a right angle structure. These alignment marks may be self-contained in the electron beam exposure system or may be prepared on the sample substrate. The shape of these alignment marks is varied, but there is only one design principle, i.e. to help the operator or machine to achieve accurate positioning.
The existing alignment mark has poor alignment effect and is easy to introduce errors. As shown in fig. 1, the actual scanning electron microscope imaging is performed, and when the field is actually modulated or aligned, the alignment mark needs to be photographed in the scanning electron microscope, so that a two-dimensional photo is formed for manual positioning, so as to accurately position the center of the cross. Especially, after the alignment mark is used for a plurality of times, imaging quality is deteriorated, and finding the center is more difficult.
The matters in the background section are only those known to the public inventor and do not, of course, represent prior art in the field.
Disclosure of Invention
The application aims to provide an alignment mark for electron beam exposure and a preparation method thereof, which solve the problem of accurate positioning of the alignment mark.
According to an aspect of the present application, there is provided a method for preparing an alignment mark for electron beam exposure, including: covering photoresist on the substrate; exposing and developing the photoresist in a predetermined shape to remove a portion of the photoresist on the substrate, thereby forming a pattern having the predetermined shape; thermally expanding the photoresist remaining on the substrate while depositing metal on the substrate and the photoresist remaining on the substrate; and removing the photoresist remaining on the substrate and the metal deposited thereon, thereby obtaining a deposited metal having the predetermined shape on the substrate.
According to some embodiments, wherein thermally expanding the photoresist remaining on the substrate comprises:
the photoresist remaining on the substrate is heated by energy carried by the metal deposited on the substrate and the photoresist remaining on the substrate.
According to some embodiments, the metal emission source is a predetermined distance from the substrate.
According to some embodiments, wherein thermally expanding the photoresist remaining on the substrate comprises:
the substrate and/or photoresist remaining on the substrate is heated using a separate heater.
According to an aspect of the present application, there is provided a method for preparing an alignment mark for electron beam exposure, including: covering the substrate with a first photoresist; covering a second photoresist on the first photoresist; exposing and developing the first and second photoresists in a predetermined shape to remove a portion of the first and second photoresists on the substrate, thereby forming a pattern having the predetermined shape; thermally expanding the first photoresist and the second photoresist remaining on the substrate while depositing metal on the substrate and the second photoresist remaining on the substrate; and removing the first photoresist and the second photoresist remaining on the substrate and the metal deposited thereon, thereby obtaining a deposited metal having the predetermined shape on the substrate.
According to some embodiments, the first photoresist has a higher sensitivity than the second photoresist, such that after exposure and development, the pattern of the first photoresist is larger than the pattern of the second photoresist.
According to some embodiments, wherein the pattern of predetermined shape has an inverted trapezoid structure.
According to some embodiments, wherein thermally expanding the first photoresist and the second photoresist remaining on the substrate comprises: the first photoresist and the second photoresist remaining on the substrate are heated by energy carried by the metal deposited on the substrate and the second photoresist remaining on the substrate.
According to some embodiments, the metal emission source is a predetermined distance from the substrate.
According to some embodiments, wherein thermally expanding the first photoresist and the second photoresist remaining on the substrate comprises:
the substrate and/or the first photoresist and the second photoresist remaining on the substrate are heated using separate heaters.
According to an aspect of the present application, there is provided an alignment mark for electron beam exposure prepared using the method as described above.
According to some embodiments, wherein the alignment mark has a triangular, trapezoidal or granary-shaped cross-section.
Based on the alignment mark for electron beam exposure and the preparation method thereof, the distance between the metal emission source and the substrate is set to be a preset distance, incident metal atoms contain higher kinetic energy, as the metal materials strike on the photoresist or the substrate, the kinetic energy is transferred to the photoresist or the substrate, the heat obtained in the deposition process is higher than the heat conducted through the substrate base, the residual heat causes thermal expansion of the photoresist, and the openings of the preset shape of the photoresist gradually decrease (as the initial, middle and final change trend in fig. 2-3) in the film coating process, so that the deposited metal film forms a trapezoid or a peak shape; or the photoresist is heated by the substrate base in the deposition process, so that the photoresist is thermally expanded, and the openings of the predetermined shape of the photoresist are gradually reduced (as the initial, middle and final change trend in fig. 2-3) in the film plating process, so that the deposited metal film forms a trapezoid or a peak shape, thereby effectively improving the reliability of the alignment mark and the accuracy of the alignment.
For a further understanding of the nature and technical aspects of the present application, reference should be made to the following detailed description and accompanying drawings, which are included to illustrate and not to limit the scope of the invention.
Drawings
Embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, are included to provide a further understanding of the disclosure. The exemplary embodiments of the present disclosure and their description are for the purpose of explaining the present disclosure and are not to be construed as unduly limiting the present disclosure. In the accompanying drawings:
fig. 1 shows a schematic diagram of a conventional electron microscope scanning structure.
Fig. 2 shows a schematic flow chart of preparing alignment marks by 1-layer photoresist according to an exemplary embodiment of the application.
Fig. 3 shows a schematic flow chart of preparing alignment marks by 2 layers of photoresist according to an exemplary embodiment of the application.
Fig. 4 shows a schematic diagram of an electron microscope scanning structure according to an exemplary embodiment of the present application.
Detailed Description
Hereinafter, only certain exemplary embodiments are briefly described. As will be recognized by those of skill in the pertinent art, the described embodiments may be modified in various different ways without departing from the spirit or scope of the present invention. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be fixedly connected, detachably connected, or integrally connected, and may be mechanically connected, electrically connected, or may communicate with each other, for example; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
Photolithography is a key process link in the current semiconductor, flat panel display, MEMS, optoelectronic, etc. industries. Photolithography refers to a technique of preparing a micro-nano pattern on a substrate under short wavelength light irradiation using a photoresist (photoresist) as a medium. Taking a semiconductor process as an example, the semiconductor device is completed by multiple special materials through complex micro-nano processing flows such as photoetching, ion etching, polishing and the like. The lithography equipment is the most central equipment in the semiconductor process, and the lithography technology is used in the steps of mask preparation, chip manufacture and packaging.
The types of lithography techniques fall into two broad categories, direct write lithography and projection lithography. The direct-writing photoetching is a key link for preparing a micro-nano structure source in a device, so that computer design data is prepared on a specific substrate, and a graph layout of a high-precision micro-nano structure is formed. Direct writing is the direct application of a converging electron beam spot to a photoresist-coated substrate without the need for the most expensive and time-consuming mask of the photolithographic process. Direct-write lithography is the most common and most commonly used technique, and its role in scientific research is increasingly widespread with the miniaturization of direct-write electron beam exposure machines.
Laser direct writing and electron beam direct writing are two main direct writing techniques in the industry. The laser direct writing can meet the requirements of preparing the mask of the node of the semiconductor of 0.25 micron and above and preparing the mask of the part below 0.25 micron. About 75% of the total amount of the current semiconductor reticles are prepared by laser direct writing equipment and the remaining reticles are completed by electron beam direct writing equipment. A large-format mask in the field of flat panel display is 100% prepared by laser direct writing equipment.
The direct writing lithography and the projection lithography are two types of lithography technologies with definite division in the current industry, and the projection lithography has the characteristics of higher line width resolution, higher precision and higher production efficiency. Although direct-writing lithography cannot meet the requirement of large-scale manufacturing of devices, in the circuit board industry, laser direct-writing is a clear trend to replace a traditional exposure machine, so that maskless lithography is an ideal target pursued by industry all the time, the expenditure of expensive mask plates can be reduced, the development efficiency of new products is improved, and the requirement of small-batch diversified production is met. In addition, direct write lithography has higher flexibility and wide adaptability due to its digitized nature. The novel exposure mode can be developed and used as a basic technology of digital micro-nano processing, thereby being hopeful to become a key technology of process iteration upgrading and new product innovation in the related industries of semiconductors and photoelectrons.
In the photoetching application field with substrate warpage and substrate deformation, the self-adaptive adjustment capability of direct-writing photoetching has the advantages of high yield and good consistency. Advanced packaging modes such as FanOut and COF are developed, and packaging lithography technology needs to have smaller line width, larger breadth and better pattern alignment overlay adaptability.
In the field of micro-nano photoelectron emerging, the development of ALoT requires the innovative development of a large number of photoelectric sensing devices. The 3D photoetching and micro-nano manufacturing are basic stone technology for the innovation of optoelectronic products, and have numerous industrial application values, such as 3D perception, augmented reality display, light sensor devices (such as TOF), ultrathin imaging, three-dimensional display, novel optical films and the like. The micro-nano photonic device is gradually applied to the fields of smart phones, augmented Reality (AR) and vehicle-mounted. Different from the integrated circuit graph, the micro-nano photon sensing device has the characteristics of higher position arrangement precision, longitudinal surface type precision and structure morphology, and dense continuous curved surface morphology. Therefore, the novel 3D direct-writing lithography technology realizes the accurate matching of exposure writing dose and position morphology, and is an innovative technical path for preparing novel photoelectronic sensing device-level micro-nano structure morphology.
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only and are not intended to limit the present application.
Example 1
Fig. 2 shows a schematic flow chart of preparing alignment marks by 1-layer photoresist according to an exemplary embodiment of the application.
As shown in fig. 2, according to an exemplary embodiment of the present application, the present application discloses a method for preparing an alignment mark 10 for electron beam exposure, comprising: covering the substrate 100 with a photoresist 101; exposing and developing the photoresist 101 in a predetermined shape to remove a portion of the photoresist 101 on the substrate 100, thereby forming a pattern having a predetermined shape; while depositing a metal on the substrate 100 and the photoresist 101 remaining on the substrate 100, thermally expanding the photoresist 101 remaining on the substrate 100; and removing the photoresist 101 remaining on the substrate 100 and the metal deposited thereon, thereby obtaining a deposited metal having a predetermined shape on the substrate 100.
In other words, fig. 2 shows a process flow of the preparation of the alignment mark 10 of the present application, and the broken line is a cross-sectional position. The preparation process comprises four steps:
1) First, a photoresist 101 is coated on a substrate 100;
2) Performing exposure of a predetermined pattern of the alignment mark 10, and developing, the predetermined pattern being displayed on the photoresist 101;
3) The deposition of the alignment mark 10 material, including but not limited to electron beam evaporation, magnetron sputtering, etc., is performed, and the material includes a metal material with high secondary electron yield, such as ti\au, ti\pd, ni, etc., so as to facilitate scanning electron microscope imaging.
4) The substrate 100 covered with the photoresist 101 is immersed in a solution in which the photoresist 101 is soluble, and after a proper time, peeled off to obtain the alignment mark 10. The scanning electron microscope imaging of the alignment mark 10 realized by the preparation process of the application can be seen in fig. 4, and the alignment mark 10 of the application is changed from a planar structure to a three-dimensional structure, so that auxiliary alignment lines appear in the scanning electron microscope imaging.
According to the embodiment of the present application, the predetermined shape may be provided as a cross shape 103, a circular shape, or a square shape, which is not particularly limited.
According to the embodiment of the present application, when the predetermined shape is the cross shape 103, the opening width of the pattern of the predetermined shape is 50nm to 5 μm.
In accordance with an embodiment of the present application, wherein thermally expanding the photoresist 101 remaining on the substrate 100 comprises: the photoresist 101 remaining on the substrate 100 is heated by energy carried by the metal deposited on the substrate 100 and the photoresist 101 remaining on the substrate 100.
According to an embodiment of the present application, the metal emission source is at a predetermined distance from the substrate 100.
According to an embodiment of the present application, the predetermined distance between the emission source of the metal and the substrate 100 may be set to 20cm to 60cm.
According to the embodiment of the present application, in the step 3, the distance between the metal emitting source and the substrate 100 is set to be a predetermined distance, the incident metal atoms contain higher kinetic energy, and as the metal material impinges on the photoresist 101 or the substrate 100, the kinetic energy is transferred to the photoresist 101 or the substrate 100, and the heat obtained during the deposition process is higher than the heat conducted through the substrate base, so that the residual heat thermally expands the photoresist 101, and during the coating process, the openings of the predetermined shape of the photoresist 101 gradually decrease (as the initial, middle and final trends in fig. 2) to form the deposited metal thin film into a trapezoid or a peak shape.
In accordance with an embodiment of the present application, wherein thermally expanding the photoresist 101 remaining on the substrate 100 comprises: the substrate 100 and/or the photoresist 101 remaining on the substrate 100 are heated using separate heaters.
According to the embodiment of the present application, in the above step 3, the photoresist 101 may be heated by the substrate base during the deposition process, so that the photoresist 101 is thermally expanded, and during the film plating process, the openings of the predetermined shape of the photoresist 101 are gradually reduced (such as the initial, middle and final trend in fig. 2), so that the deposited metal film forms a trapezoid or a peak shape, thereby effectively improving the reliability and the alignment accuracy of the alignment mark 10.
Example two
Fig. 3 shows a schematic flow chart of preparing alignment marks by 2 layers of photoresist according to an exemplary embodiment of the application. Fig. 4 shows a schematic diagram of an electron microscope scanning structure according to an exemplary embodiment of the present application.
As shown in fig. 3, according to an aspect of the present application, there is provided a method for preparing an alignment mark 10 for electron beam exposure, including: covering the substrate 100 with a first photoresist 105; covering the first photoresist 105 with a second photoresist 106; exposing and developing the first photoresist 105 and the second photoresist 106 in a predetermined shape to remove a portion of the first photoresist 105 and a portion of the second photoresist 106 on the substrate 100, thereby forming a pattern having a predetermined shape; simultaneously with depositing metal on the substrate 100 and the second photoresist 106 remaining on the substrate 100, thermally expanding the first photoresist 105 and the second photoresist 106 remaining on the substrate 100; and removing the first photoresist 105 and the second photoresist 106 remaining on the substrate 100 and the metal deposited thereon, thereby obtaining a deposited metal having a predetermined shape on the substrate 100.
In other words, fig. 3 shows a process flow of the preparation of the alignment mark 10 of the present application, and the broken line is a cross-sectional position. The preparation process comprises four steps:
1) First, a first photoresist 105 and a second photoresist 106 are covered on a substrate 100, the two photoresists have different sensitivity, and the second photoresist 106 with high sensitivity is arranged below;
2) Exposing and developing a predetermined pattern of the alignment mark 10, the predetermined pattern being displayed on the photoresist, the width of the predetermined pattern being larger after development due to the high sensitivity of the second photoresist 106 at the bottom, as seen in a cross-sectional view, to form such an undercut structure shown in the second step;
3) The deposition of the alignment mark 10 material, including but not limited to electron beam evaporation, magnetron sputtering, etc., is performed, and the material includes a metal material with high secondary electron yield, such as ti\au, ti\pd, ni, etc., so as to facilitate scanning electron microscope imaging.
4) The substrate 100 is immersed in a solution in which the photoresist is soluble, and after a proper time, peeled off to obtain the alignment mark 10. The scanning electron microscope imaging of the alignment mark 10 realized by the process prepared by the application can be seen in fig. 4, and the alignment mark 10 of the application is changed from a planar structure to a three-dimensional structure, so that auxiliary alignment lines appear in the scanning electron microscope imaging.
According to the embodiment of the present application, the predetermined shape may be provided as a cross shape 103, a circular shape, or a square shape, which is not particularly limited.
According to the embodiment of the present application, when the predetermined shape is the cross shape 103, the opening width of the pattern of the predetermined shape on the second photoresist 106 is 50nm to 5 μm.
According to the embodiment of the present application, the first photoresist 105 has higher sensitivity than the second photoresist 106, so that the pattern of the first photoresist 105 is larger than the pattern of the second photoresist 106 after exposure and development.
According to the embodiment of the present application, the sensitivity of the first photoresist 105 is more than 1.2 times that of the second photoresist 106.
In accordance with an embodiment of the present application, wherein the pattern of predetermined shape has an inverted trapezoid structure 104.
In accordance with an embodiment of the present application, wherein thermally expanding the first photoresist 105 and the second photoresist 106 remaining on the substrate 100 comprises: the first photoresist 105 and the second photoresist 106 remaining on the substrate 100 are heated by energy carried by the metal deposited on the substrate 100 and the second photoresist 106 remaining on the substrate 100.
According to an embodiment of the present application, the metal emission source is at a predetermined distance from the substrate 100.
According to an embodiment of the present application, the predetermined distance between the emission source of the metal and the substrate 100 may be set to 20cm to 60cm.
According to the embodiment of the present application, in the step 3, the distance between the metal emitting source and the substrate 100 is set to be a predetermined distance, the incident metal atoms contain higher kinetic energy, and as the metal material impinges on the photoresist or the substrate 100, the kinetic energy is transferred to the photoresist or the substrate 100, and the heat obtained during the deposition process is higher than the heat conducted through the substrate base, so that the residual heat thermally expands the photoresist, and during the film plating process, the openings of the predetermined shape of the photoresist gradually decrease (as the initial, middle and final trends in fig. 3) to form the deposited metal film into a trapezoid or a peak shape;
in accordance with an embodiment of the present application, wherein thermally expanding the first photoresist 105 and the second photoresist 106 remaining on the substrate 100 comprises: the substrate 100 and/or the first photoresist 105 and the second photoresist 106 remaining on the substrate 100 are heated using separate heaters.
According to the embodiment of the present application, in step 3, the photoresist may be heated by the substrate base during the deposition process, so that the photoresist is thermally expanded, and the openings of the predetermined shape of the photoresist are gradually reduced (as the trend of initial, middle and final stages in fig. 3) during the film plating process, so that the deposited metal film forms a trapezoid or a peak shape, thereby effectively improving the reliability and the alignment accuracy of the alignment mark 10.
According to an aspect of the present application, an alignment mark 10 for electron beam exposure prepared using the above method is proposed.
According to the embodiment of the application, the alignment mark 10 has a triangular, trapezoidal or granary-shaped cross section, so that the reliability and the alignment accuracy of the alignment mark 10 are effectively improved.
Finally, it should be noted that: the foregoing description is only exemplary embodiments of the present disclosure, and not intended to limit the disclosure, but although the disclosure has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the technical solutions described in the foregoing embodiments, or equivalents may be substituted for some of the technical features thereof. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (11)
1. A method of preparing an alignment mark for electron beam exposure, comprising:
covering photoresist on the substrate;
exposing and developing the photoresist in a predetermined shape to remove a portion of the photoresist on the substrate, thereby forming a pattern having the predetermined shape;
simultaneously depositing metal on the substrate and the photoresist remaining on the substrate, and thermally expanding the photoresist remaining on the substrate, wherein the openings of the predetermined shape on the photoresist are reduced; and
the photoresist remaining on the substrate and the metal deposited thereon are removed, thereby obtaining a deposited metal having the predetermined shape with a triangular, trapezoidal or granary-shaped cross section on the substrate.
2. The method of manufacturing according to claim 1, wherein thermally expanding the photoresist remaining on the substrate comprises:
the photoresist remaining on the substrate is heated by energy carried by the metal deposited on the substrate and the photoresist remaining on the substrate.
3. The manufacturing method according to claim 2, wherein the emission source of the metal has a predetermined distance from the substrate.
4. The method of manufacturing according to claim 1, wherein thermally expanding the photoresist remaining on the substrate comprises:
the substrate and/or photoresist remaining on the substrate is heated using a separate heater.
5. A method of preparing an alignment mark for electron beam exposure, comprising:
covering the substrate with a first photoresist;
covering a second photoresist on the first photoresist;
exposing and developing the first and second photoresists in a predetermined shape to remove a portion of the first and second photoresists on the substrate, thereby forming a pattern having the predetermined shape;
while depositing metal on the substrate and the second photoresist remaining on the substrate, thermally expanding the first photoresist and the second photoresist remaining on the substrate, the openings of the predetermined shape of the first photoresist and the second photoresist being reduced; and
the first photoresist and the second photoresist remaining on the substrate and the metal deposited thereon are removed, thereby obtaining a deposited metal having the predetermined shape with a triangular, trapezoidal or granary-shaped cross section on the substrate.
6. The manufacturing method according to claim 5, wherein the first photoresist has higher sensitivity than the second photoresist, so that after exposure and development, a pattern of the first photoresist is larger than a pattern of the second photoresist.
7. The manufacturing method according to claim 5, wherein the pattern of the predetermined shape has an inverted trapezoid structure.
8. The method of manufacturing according to claim 5, wherein thermally expanding the first photoresist and the second photoresist remaining on the substrate comprises:
the first photoresist and the second photoresist remaining on the substrate are heated by energy carried by the metal deposited on the substrate and the second photoresist remaining on the substrate.
9. The method of manufacturing according to claim 8, wherein the metal emission source has a predetermined distance from the substrate.
10. The method of manufacturing according to claim 5, wherein thermally expanding the first photoresist and the second photoresist remaining on the substrate comprises:
the substrate and/or the first photoresist and the second photoresist remaining on the substrate are heated using separate heaters.
11. An alignment mark for electron beam exposure prepared by the method of any one of claims 1 to 10.
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Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379833A (en) * | 1981-12-31 | 1983-04-12 | International Business Machines Corporation | Self-aligned photoresist process |
| JPH01192115A (en) * | 1988-01-28 | 1989-08-02 | Toshiba Corp | Formation of alignment marker |
| US5128283A (en) * | 1988-06-08 | 1992-07-07 | Nec Corporation | Method of forming mask alignment marks |
| JPH07201889A (en) * | 1993-12-10 | 1995-08-04 | Korea Electron Telecommun | Method for manufacturing t-shaped gate by double exposure |
| US6118128A (en) * | 1997-11-26 | 2000-09-12 | Mitsubishi Denki Kabushiki Kaisha | Alignment mark for electron beam lithography |
| CN1502118A (en) * | 2000-09-12 | 2004-06-02 | Boc | Method for selective metal film layer removal using carbon dioxide jet spray |
| CN101207069A (en) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Method for forming of via hole |
| CN101350297A (en) * | 2007-07-17 | 2009-01-21 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device well |
| CN101452211A (en) * | 2007-11-28 | 2009-06-10 | 上海华虹Nec电子有限公司 | Method for producing photolithography alignment mark |
| CN103456659A (en) * | 2013-08-26 | 2013-12-18 | 中国电子科技集团公司第十三研究所 | Method for manufacturing photoetching registration mark for manufacturing semiconductor device |
| CN103487160A (en) * | 2013-09-27 | 2014-01-01 | 北京理工大学 | Method for manufacturing Pt resistor temperature sensor |
| CN104635432A (en) * | 2015-01-27 | 2015-05-20 | 中国科学院物理研究所 | To-be-exposed substrate for electron beam lithography and method of positioning alignment mark |
| WO2015172505A1 (en) * | 2014-05-15 | 2015-11-19 | 京东方科技集团股份有限公司 | Ion implantation method |
| CN105575789A (en) * | 2015-12-23 | 2016-05-11 | 昆山工研院新型平板显示技术中心有限公司 | Method for patterning thin film |
| CN107331601A (en) * | 2017-06-29 | 2017-11-07 | 苏州苏纳光电有限公司 | The photoresist deposition and method for stripping metal of double exposure |
| WO2021069708A1 (en) * | 2019-10-10 | 2021-04-15 | Merck Patent Gmbh | Positive tone photoresist formulation using crosslinkable siloxane compounds |
| CN113341664A (en) * | 2021-04-13 | 2021-09-03 | 西安电子科技大学广州研究院 | Concave SOI substrate electron beam alignment mark structure and preparation method thereof |
-
2022
- 2022-01-14 CN CN202210042527.5A patent/CN114460819B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379833A (en) * | 1981-12-31 | 1983-04-12 | International Business Machines Corporation | Self-aligned photoresist process |
| JPH01192115A (en) * | 1988-01-28 | 1989-08-02 | Toshiba Corp | Formation of alignment marker |
| US5128283A (en) * | 1988-06-08 | 1992-07-07 | Nec Corporation | Method of forming mask alignment marks |
| JPH07201889A (en) * | 1993-12-10 | 1995-08-04 | Korea Electron Telecommun | Method for manufacturing t-shaped gate by double exposure |
| US6118128A (en) * | 1997-11-26 | 2000-09-12 | Mitsubishi Denki Kabushiki Kaisha | Alignment mark for electron beam lithography |
| CN1502118A (en) * | 2000-09-12 | 2004-06-02 | Boc | Method for selective metal film layer removal using carbon dioxide jet spray |
| CN101207069A (en) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Method for forming of via hole |
| CN101350297A (en) * | 2007-07-17 | 2009-01-21 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device well |
| CN101452211A (en) * | 2007-11-28 | 2009-06-10 | 上海华虹Nec电子有限公司 | Method for producing photolithography alignment mark |
| CN103456659A (en) * | 2013-08-26 | 2013-12-18 | 中国电子科技集团公司第十三研究所 | Method for manufacturing photoetching registration mark for manufacturing semiconductor device |
| CN103487160A (en) * | 2013-09-27 | 2014-01-01 | 北京理工大学 | Method for manufacturing Pt resistor temperature sensor |
| WO2015172505A1 (en) * | 2014-05-15 | 2015-11-19 | 京东方科技集团股份有限公司 | Ion implantation method |
| CN104635432A (en) * | 2015-01-27 | 2015-05-20 | 中国科学院物理研究所 | To-be-exposed substrate for electron beam lithography and method of positioning alignment mark |
| CN105575789A (en) * | 2015-12-23 | 2016-05-11 | 昆山工研院新型平板显示技术中心有限公司 | Method for patterning thin film |
| CN107331601A (en) * | 2017-06-29 | 2017-11-07 | 苏州苏纳光电有限公司 | The photoresist deposition and method for stripping metal of double exposure |
| WO2021069708A1 (en) * | 2019-10-10 | 2021-04-15 | Merck Patent Gmbh | Positive tone photoresist formulation using crosslinkable siloxane compounds |
| CN113341664A (en) * | 2021-04-13 | 2021-09-03 | 西安电子科技大学广州研究院 | Concave SOI substrate electron beam alignment mark structure and preparation method thereof |
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|---|---|
| CN114460819A (en) | 2022-05-10 |
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