CN111381436B - Method for manufacturing photomask with pattern - Google Patents
Method for manufacturing photomask with pattern Download PDFInfo
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- CN111381436B CN111381436B CN201811608259.9A CN201811608259A CN111381436B CN 111381436 B CN111381436 B CN 111381436B CN 201811608259 A CN201811608259 A CN 201811608259A CN 111381436 B CN111381436 B CN 111381436B
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- 238000000034 method Methods 0.000 title claims abstract description 96
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000012360 testing method Methods 0.000 claims abstract description 105
- 238000013461 design Methods 0.000 claims abstract description 60
- 238000010894 electron beam technology Methods 0.000 claims abstract description 60
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 58
- 229920002120 photoresistant polymer Polymers 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 238000012937 correction Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 239000005388 borosilicate glass Substances 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical group O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
Abstract
The invention provides a method for manufacturing a photomask with a pattern, which comprises the following steps: providing a design pattern and a standard test pattern; writing the standard test pattern by adopting a test electron beam lithography process, generating a test photomask, and obtaining the position deviation between the test pattern in the test photomask and the standard test pattern; and writing the design pattern by adopting an actual electron beam lithography process, generating a photomask with the pattern, and compensating the design pattern based on the acquired position deviation amount in the actual electron beam lithography process so as to offset the electron beam position deviation amount caused by reflected electrons in the actual electron beam lithography process on the electron beam position. The invention improves the pattern position accuracy and the shape accuracy in the photomask and improves the quality of the formed photomask.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a method for manufacturing a photomask with patterns.
Background
With the development of semiconductor manufacturing processes, the area of semiconductor chips is becoming smaller and smaller, and thus the accuracy of semiconductor processes is becoming more important. One of the important processes in semiconductor manufacturing is photolithography, which is a process of transferring a pattern on a reticle to a photolithographic pattern on a semiconductor.
In the field of integrated circuit fabrication, photolithography is used to transfer a pattern from a reticle, also known as a reticle or mask, containing circuit design information to a wafer (wafer). The photomask is a flat plate with light transmittance for exposure light, and at least one geometric figure with light-shielding property for the exposure light is arranged on the flat plate, and the geometric figure is a design figure, so that the light irradiated on the photoresist on the surface of the wafer can be selectively shielded, and a corresponding pattern is finally formed on the photoresist on the surface of the wafer.
However, the accuracy of the mask pattern fabricated by the prior art needs to be improved.
Disclosure of Invention
The invention solves the problem of providing a method for manufacturing a photomask with patterns, which improves the position accuracy and the shape accuracy of the patterns in the photomask and improves the quality of the formed photomask.
In order to solve the above problems, the present invention provides a method for manufacturing a photomask having a pattern, comprising: providing a design pattern and a standard test pattern; writing the standard test pattern by adopting a test electron beam lithography process, generating a test photomask, and obtaining the position deviation between the test pattern in the test photomask and the standard test pattern; and writing the design pattern by adopting an actual electron beam lithography process, generating a photomask with the pattern, and compensating the design pattern based on the acquired position deviation in the actual electron beam lithography process.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
in the technical scheme of the method for manufacturing the photomask with the patterns, a standard test pattern is written by adopting a test electron beam lithography process, a test photomask is generated, and the position deviation amount between the test pattern in the test photomask and the standard test pattern is obtained, wherein the position deviation amount represents the influence of reflected electrons on the position of an electron beam; and writing a design pattern by adopting an actual electron beam lithography process, generating a photomask with the pattern, and compensating the design pattern based on the acquired position deviation amount in the actual electron beam lithography process so as to offset or reduce the electron beam position deviation amount of the reflected electrons in the actual electron beam lithography process on the electron beam position. Therefore, in the embodiment of the invention, in the actual electron beam lithography process, the influence of the reflected electrons on the electron beam position is considered and the design pattern is compensated in advance, so that the pattern actually written in the actual electron beam lithography process is the compensated design pattern, and therefore, the compensation amount and the influence of the reflected electrons on the electron beam position are exactly complementary and offset, thereby improving the position accuracy and the shape accuracy of the pattern in the formed photomask and improving the quality of the formed photomask.
Optionally, in order to improve consistency of the obtained positional deviation amount with the electron beam influence in the actual electron beam lithography process, the process parameters of the test electron beam lithography process are the same as those of the actual electron beam lithography process.
Drawings
FIGS. 1 and 2 are schematic diagrams illustrating a mask manufacturing process;
FIG. 3 is a flow chart of a method for manufacturing a photomask with patterns according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a standard test pattern according to an embodiment of the present invention;
fig. 5 to fig. 7 are schematic structural diagrams corresponding to each step of forming a photomask with patterns according to an embodiment of the present invention.
Detailed Description
As known from the background art, the accuracy of the mask pattern manufactured by the prior art needs to be improved.
Now, with reference to a mask manufacturing process, fig. 1 and 2 are schematic structural diagrams of a mask manufacturing process, and the process steps for forming a mask include: referring to fig. 1, a carrier plate 10 and a mask plate 20 positioned on the carrier plate 10 are provided; forming a photoresist layer 30 on the surface of the mask 20; and transferring the design pattern into the photoresist layer 30 by using a direct writing mode of electron beam lithography, and performing exposure treatment on the photoresist layer 30.
Referring to fig. 2, the photoresist layer 30 (refer to fig. 1) after the exposure process is subjected to a development process, exposing a portion of the surface of the reticle 20 (refer to fig. 1); etching and removing the exposed mask plate 20 to form a photomask 40 with patterns; photoresist layer 30 is removed.
The patterns in the mask 40 formed as described above have positional deviations and topography deviations from the design patterns, resulting in poor pattern accuracy in the mask 40. It has been found that during electron beam lithography, an electron source (e.g., an electron gun) generates a plurality of electrons that are accelerated and focused to form an electron beam 50 that is projected onto the photoresist layer 30; the electron beam 50 may be focused magnetically or electrically and scanned over the photoresist layer 30 to form the desired design pattern. However, the projection of the electron beam 50 onto the photoresist layer 30 generates reflected electrons 31, and these reflected electrons 31 repel each other and cause the position of the electron beam projected onto the photoresist layer 30 to shift, thereby causing the pattern in the finally formed mask 40 to deviate from the design pattern.
Moreover, the matching degree of the pattern in the mask 40 and the design pattern is greatly dependent on the pattern density of the design pattern. Specifically, if the pattern density is high in some areas on the exposed area, this means that the number of reflected electrons 31 concentrated on that area is large, the offset caused by the position of the electron beam 50 on that area being affected by the reflected electrons 31 is relatively large, and the offset caused by the position of the electron beam 50 on the area having a lower pattern density being affected by the reflected electrons 31 is relatively small.
In order to know the alignment accuracy between the pattern in the photomask 40 and the design pattern, a mask frame (mask frame) is generally disposed around the reticle 20, and has an alignment mark thereon. However, since the actual conditions around the alignment mark on the mask frame do not faithfully reflect the shift of the projection position of the electron beam on the photoresist layer 30 after the mutual exclusion of the reflected electrons 31, even if the alignment mark on the mask frame shows the alignment between the pattern on the mask 40 and the design pattern, the pattern on the mask 40 may actually deviate from the design pattern, resulting in erroneous judgment of the yield of the mask 40.
In order to solve the above problems, the present invention provides a method for manufacturing a photomask, which considers the influence of reflected electrons on the position of an electron beam when writing a design pattern by using an actual electron beam lithography process, thereby improving the position accuracy and the topography accuracy of the pattern formed in the photomask.
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
Fig. 3 is a flowchart illustrating a method for manufacturing a photomask with patterns according to an embodiment of the present invention.
Referring to fig. 3 and fig. 4 in combination, fig. 4 is a schematic diagram of a standard test pattern provided in an embodiment of the invention, and step S1 is performed to provide a design pattern and a standard test pattern 100.
The design pattern is a preset pattern which needs to be generated in the photomask, and the design pattern can be determined according to different semiconductor process requirements.
The standard test pattern 100 is used to perform a test e-beam lithography process to obtain the effect of reflected electrons on the electron beam position.
In this embodiment, the pattern shape of the standard test pattern 100 is a stripe. In other embodiments, the pattern shapes in the standard test pattern may also be other irregular shapes.
Since the design pattern generally has a pattern extending along the X-direction and a pattern extending along the Y-direction, in order to improve the matching degree between the test mask generated based on the standard test pattern 100 and the mask generated by the actual process, the position deviation obtained later can reflect the influence of the reflected electrons in the mask process generated by the actual process to the greatest extent, in this embodiment, the patterns in the standard test pattern 100 include a stripe pattern extending along the X-direction and a stripe pattern extending along the Y-direction, and the X-direction is perpendicular to the Y-direction
The pattern density in the standard test pattern 100 is not too small nor too large, wherein the pattern density can be pattern loading. If the pattern density in the standard test pattern 100 is too small, in the subsequent process of performing test electron beam lithography based on the standard test pattern 100, the amount of reflected electrons affecting the electron beam position is small, so that the difference between the correspondingly obtained position deviation amount and the deviation amount of reflected electrons affecting the electron beam position in the actual process is larger; if the pattern density in the standard test pattern 100 is too high, the amount of reflected electrons affecting the electron beam position is too high in the subsequent process of performing the test electron beam lithography based on the standard test pattern 100, so that the obtained position deviation amount and the deviation amount of the reflected electrons affecting the electron beam position in the actual process are correspondingly larger.
For this purpose, the pattern density in the standard test pattern 100 is 25% to 40%. In this embodiment, the pattern density in the standard test pattern 100 is 30%, and the effect of the reflected electrons on the electron beam position during the test electron beam lithography process performed based on the standard test pattern 100 within the pattern density range is close to the effect of the reflected electrons on the electron beam position in the actual process.
And S2, writing the standard test pattern 100 by adopting a test electron beam lithography process, generating a test photomask, and obtaining the position deviation between the test pattern and the standard test pattern in the test photomask.
In this embodiment, the standard test pattern 100 is used to simulate the effect of reflected electrons in an actual electron beam lithography process; the position deviation amount is used for reflecting the influence of the reflected electrons on the position of the electron beam.
Specifically, the step of generating a test mask using a test electron beam lithography process includes: providing a test mask; forming a test photoresist layer on the surface of the test mask; determining the position of the electron beam projected onto the test photoetching layer according to the standard test pattern 100, and performing test exposure treatment on the test photoetching layer to write the standard test pattern 100 into the test photoetching layer in a direct-writing mode of the electron beam; performing test development treatment on the photoresist layer subjected to the test exposure treatment to expose part of the test mask; and etching to remove the exposed test mask plate to form a test mask with a test pattern.
In the test exposure process, reflected electrons are formed when the electron beam is projected onto the test photoresist layer, and after the reflected electrons are gathered, the position of the electron beam projected onto the test photoresist layer is influenced, so that the position of the electron beam is deviated, and therefore, a deviation exists between a pattern actually written into the test photoresist layer by the electron beam and the standard test pattern 100, and the position of the finally formed test pattern deviates from the position of the standard test pattern 100 formed in a preset manner.
In this embodiment, the method for obtaining the position deviation between the test pattern in the test mask and the standard test pattern 100 includes: before the test electron beam lithography process is carried out, an alignment mark is arranged on the test mask plate, an alignment mark pattern is arranged in the standard test pattern, and the alignment mark is a position where the alignment mark pattern is written into the test mask plate under ideal conditions; writing the alignment mark pattern into a test photoresist layer in the test electron beam lithography process, and correspondingly forming a test mark pattern in a test photomask; and acquiring the position deviation between the test mark pattern and the alignment mark, wherein the position deviation is the position deviation between the test pattern and the standard test pattern in the test photomask.
In this embodiment, the process conditions of the test e-beam lithography process are the same as those of the actual e-beam lithography process. Specifically, the electron beam energy adopted by the test electron beam lithography process is the same as the electron beam energy adopted by the actual electron beam lithography process, and the exposure time, the developing solution parameter and the developing time adopted by the test electron beam lithography process are the same as the exposure time, the developing solution parameter and the developing time adopted by the actual electron beam lithography process.
And step S3, writing the design pattern by adopting an actual electron beam lithography process, generating a photomask with the pattern, and compensating the design pattern based on the acquired position deviation in the actual electron beam lithography process.
And compensating the design pattern based on the acquired position deviation amount to offset the electron beam position deviation amount caused by the reflected electrons in the actual electron beam lithography process on the electron beam position.
Specifically, during the actual electron beam lithography process, reflected electrons are generated when the electron beam is projected onto the photoresist layer, and the reflected electrons are collected to affect the position of the electron beam, so that the position of the electron beam projected onto the photoresist layer is offset. In this embodiment, in order to compensate or counteract the influence of the reflected electrons on the electron beam position, during the actual electron beam lithography process, the design pattern is compensated based on the obtained position deviation, that is, the influence of the reflected electrons on the electron beam position is considered during the actual electron beam lithography process, so that the pattern actually written during the actual electron beam lithography process is no longer the design pattern, but the correction pattern obtained after the compensation of the design pattern is performed based on the position deviation.
Because the influence of reflected electrons on the electron beam position is considered in the actual electron beam lithography process, the patterns in the finally generated photomask with the patterns conform to the design patterns, and the alignment accuracy between the patterns in the photomask and the design patterns is high and the shape matching degree is high. In this embodiment, the pattern in the mask with the pattern is identical to the design pattern.
In this embodiment, in the actual electron beam lithography process, the method for compensating the design pattern based on the positional deviation amount includes: compensating and correcting the design graph based on the position deviation amount to obtain a corrected graph; and writing the corrected pattern into the photomask by adopting an actual electron beam lithography process to generate the photomask with the pattern.
The position deviation amount is a vector and comprises a position deviation value and a position deviation direction. When the compensation correction is performed on the design pattern, not only the position deviation value is added to the design pattern, but also the position deviation direction needs to be considered, for example, when the position deviation value indicates that the test pattern deviates in the direction a→a1 relative to the standard test pattern 100, the position deviation value is compensated for the design pattern in the direction a1→a.
A method of compensating the design pattern based on the positional deviation amount during the actual electron beam lithography process will be described in detail with reference to the accompanying drawings.
Referring to fig. 5 to fig. 7 in combination, fig. 5 to fig. 7 are schematic structural diagrams corresponding to each step of forming a photomask with a pattern according to an embodiment of the present invention.
Referring to fig. 5, a substrate 200, a reticle 201 on the substrate 200, and a photoresist layer 202 on the reticle 201 surface are provided; and determining the position of the electron beam projected onto the photoresist layer 202 according to the corrected graph, and performing exposure treatment on the photoresist layer 202.
The substrate 200 provides an operation platform for performing exposure processing and subsequent development processing, and the substrate 200 also provides a supporting function for the mask 201.
The material of the substrate 200 is a light-transmitting material. In this embodiment, the material of the substrate 200 is quartz glass. In other embodiments, the material of the substrate may also be borosilicate glass.
In this embodiment, the mask 201 is made of chromium. In order to improve the adhesion between the mask 201 and the substrate 200, an adhesion layer may be formed on the surface of the substrate 200 before the mask 201 is formed. The material of the adhesion layer is oxide of chromium or nitride of chromium.
The photoresist layer 202 may be made of a positive photoresist material or a negative photoresist material.
In this embodiment, before the photoresist layer 202 is formed, an anti-reflection layer may be further formed on the surface of the mask 201, where the anti-reflection layer is beneficial to avoid adverse effects on the electron beam caused by the light reflected by the mask 201. The anti-reflection layer is made of chromium oxide.
When the electron beam is projected onto the photoresist layer 202 during the exposure process, even if reflected electrons are collected on the photoresist layer 202, the reflected electrons affect the actual projection position of the electron beam, however, since the correction pattern considers the effect of the reflected electrons on the electron beam position, in this embodiment, the actual projection position of the electron beam onto the photoresist layer 202 is expected.
Referring to fig. 6, the photoresist layer 202 after the exposure process is developed to expose a portion of the reticle 201.
When the photoresist layer 202 is a positive photoresist material, the developing solution used in the developing process is a positive photoresist developing solution; when the photoresist layer 202 is a negative photoresist material, the developing solution used in the developing process is a negative photoresist developing solution.
Referring to fig. 7, the exposed mask 201 is etched and removed until the surface of the substrate 200 is exposed, so as to generate a photomask 211 with a pattern; the photoresist layer 202 is removed (refer to fig. 6).
In this embodiment, the photoresist layer 202 after the development treatment is used as a mask, the exposed mask 201 is etched and removed by adopting a dry etching process, and the pattern written into the photoresist layer 202 by adopting an actual electron beam lithography process is transferred into the mask 201, so as to form a photomask 211 with the pattern.
Since the influence of the reflected electrons on the electron beam position is considered when writing the design pattern into the photoresist layer 202 in this embodiment, the pattern position accuracy of the pattern finally formed in the mask 211 in this embodiment is high and the shape meets the expectations, which is beneficial to improving the quality of the formed mask 211 and reducing the reject ratio of the mask 211.
In other embodiments of the present invention, in the actual electron beam lithography process, the method for compensating the design pattern based on the positional deviation amount includes: the design pattern corresponds to a design electron beam projection position in an electron beam lithography process, and compensation correction is carried out on the design electron beam projection position based on the position deviation value to obtain a corrected electron beam projection position; and writing the design pattern in the photomask by adopting an actual electron beam lithography process and adopting an electron beam with the corrected electron beam projection position to generate the photomask with the pattern.
The following table is a comparative table of the alignment of a patterned photomask generated based on the same design pattern in the prior art and the present embodiment.
List one
And selecting points with the same X direction and Y direction for comparison, wherein the average Mean Value of the points selected in the X direction is 0.00000nm, and the average Mean Value of the points selected in the Y direction is 0.00000nm. As can be seen from the above table, for the selected points in the X direction, the maximum value Max 3 sigma of the 3 sigma criterion of the selected points in the prior art is larger than the maximum value Max 3 sigma of the 3 sigma criterion in the present embodiment; also for the Y-direction selected point, the maximum value Max 3 sigma of the 3 sigma criterion in the prior art is larger than the maximum value Max 3 sigma of the 3 sigma criterion in the present embodiment; the absolute Value of the minimum Value Min Value in the prior art is larger than that of the minimum Value Min Value in the present embodiment, both for the point selected in the X direction and for the point selected in the Y direction. The Max 3 sigma value is a parameter that best reflects the amount of positional deviation between the pattern in the mask and the design pattern, and it can be seen that the pattern positional accuracy of the mask generated in this embodiment is significantly better than that of the mask generated in the prior art.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (12)
1. A method of fabricating a patterned photomask, comprising:
providing a design pattern and a standard test pattern;
writing the standard test pattern by adopting a test electron beam lithography process, generating a test photomask, and obtaining the position deviation between the test pattern in the test photomask and the standard test pattern;
writing the design pattern by adopting an actual electron beam lithography process, generating a photomask with a pattern, and compensating the design pattern based on the acquired position deviation amount in the actual electron beam lithography process so as to offset the electron beam position deviation amount caused by reflected electrons in the actual electron beam lithography process on the electron beam position;
the method for compensating the design graph based on the position deviation amount comprises the following steps: compensating and correcting the design graph based on the position deviation amount to obtain a corrected graph; writing the corrected graph into the photomask by adopting an actual electron beam lithography process to generate the photomask with the graph; alternatively, the method of compensating the design pattern based on the positional deviation amount includes: the design pattern corresponds to a design electron beam projection position in an electron beam lithography process, and compensation correction is carried out on the design electron beam projection position based on the position deviation value to obtain a corrected electron beam projection position; and writing the design pattern in the photomask by adopting an actual electron beam lithography process and adopting an electron beam with the corrected electron beam projection position to generate the photomask with the pattern.
2. The method of manufacturing according to claim 1, wherein the pattern in the patterned mask corresponds to the design pattern.
3. The method of manufacturing according to claim 1, wherein the process parameters of the test e-beam lithography process are the same as the process parameters of the actual e-beam lithography process.
4. The method of manufacturing of claim 1, wherein the step of creating the patterned photomask comprises: providing a substrate, a mask plate positioned on the substrate and a photoresist layer positioned on the surface of the mask plate; determining the position of the electron beam projected onto the photoresist layer according to the correction pattern, and performing exposure treatment on the photoresist layer; developing the photoresist layer after exposure treatment to expose part of the mask; etching to remove the exposed mask until the surface of the substrate is exposed; and removing the photoresist layer.
5. The method of manufacturing according to claim 4, wherein the material of the substrate comprises quartz glass or borosilicate glass.
6. The method of claim 4, wherein the reticle material comprises chromium.
7. The method of manufacturing of claim 6, further comprising, prior to forming the reticle, forming an adhesion layer on the substrate surface; before forming the photoresist layer, forming an anti-reflection layer on the surface of the mask.
8. The method of manufacturing according to claim 7, wherein the material of the adhesion layer is an oxide of chromium or a nitride of chromium; the anti-reflection layer is made of chromium oxide.
9. The method of manufacturing according to claim 1, wherein the pattern density in the standard test pattern is 25% to 40%.
10. The method of manufacturing of claim 9, wherein the pattern density in the standard test pattern is 30%.
11. The method of manufacturing according to claim 1, wherein the pattern shape in the standard test pattern is a stripe shape.
12. The method of manufacturing according to claim 11, wherein the patterns in the standard test patterns include stripe patterns extending in the X-direction and stripe patterns extending in the Y-direction.
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| CN114721226B (en) * | 2021-01-04 | 2023-08-25 | 长鑫存储技术有限公司 | Photomask placement error correction method and device |
| CN113534602A (en) * | 2021-07-16 | 2021-10-22 | 长鑫存储技术有限公司 | Photomask and preparation method thereof |
| CN114326330B (en) * | 2022-01-21 | 2023-09-26 | 锐立平芯微电子(广州)有限责任公司 | Photoetching pattern optimization method and device |
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| JP2000114168A (en) * | 1998-09-30 | 2000-04-21 | Nikon Corp | Charged-particle beam mask and manufacture thereof and operating method of chrged-particle beam lithography system |
| TW472298B (en) * | 1999-10-29 | 2002-01-11 | Advantest Corp | Electron beam exposure apparatus, adjusting method, and block mask for adjustment |
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| CN104035275A (en) * | 2014-05-21 | 2014-09-10 | 京东方科技集团股份有限公司 | Mask plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6227466B2 (en) * | 2014-04-14 | 2017-11-08 | 株式会社日立ハイテクノロジーズ | Charged particle beam apparatus and inspection apparatus |
| JP6808986B2 (en) * | 2016-06-09 | 2021-01-06 | 株式会社ニューフレアテクノロジー | Multi-charged particle beam drawing device and its adjustment method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000114168A (en) * | 1998-09-30 | 2000-04-21 | Nikon Corp | Charged-particle beam mask and manufacture thereof and operating method of chrged-particle beam lithography system |
| TW472298B (en) * | 1999-10-29 | 2002-01-11 | Advantest Corp | Electron beam exposure apparatus, adjusting method, and block mask for adjustment |
| TW522466B (en) * | 2000-11-15 | 2003-03-01 | Advantest Corp | Method for correcting electron beam and electron beam exposure device |
| CN104035275A (en) * | 2014-05-21 | 2014-09-10 | 京东方科技集团股份有限公司 | Mask plate |
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