CN110716386B - Optical proximity effect correction method, optical proximity effect correction device and mask - Google Patents
Optical proximity effect correction method, optical proximity effect correction device and mask Download PDFInfo
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- CN110716386B CN110716386B CN201911039992.8A CN201911039992A CN110716386B CN 110716386 B CN110716386 B CN 110716386B CN 201911039992 A CN201911039992 A CN 201911039992A CN 110716386 B CN110716386 B CN 110716386B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a correction method of optical proximity effect, comprising the following steps: obtaining a test pattern; exposing based on the mask of the test pattern to obtain exposure data; establishing an OPC first rule base based on the corresponding relation between the data of the test pattern and the exposure data; determining a key region of the layout to be corrected, and obtaining graphic characteristic parameters of the key region; screening the OPC first rule base according to the graphic characteristic parameters of the key areas to obtain an OPC second rule base; and correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout. The invention also provides a device for correcting the optical proximity effect. And screening the OPC first rule base according to the graphic characteristic parameters of the key areas, reducing the number of rules in the rule base and shortening the corrected running time. The invention also provides a mask formed by the correction method, which improves the fidelity of the exposed pattern.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing industry, and in particular, to a method and apparatus for correcting optical proximity effect, and a mask.
Background
Photolithography is a major process for integrated circuit fabrication and is used to transfer patterns from a reticle (also known as a mask or reticle) to materials on layers of a silicon surface, simply referred to as transferring the pattern from the mask to a wafer. The practical implementation is that the mask is irradiated by light of a light source, a pattern to be transferred is arranged on the mask, the mask pattern corresponds to an obstacle on a transmission route for light waves, the mask pattern is projected onto the photoresist through a projection system, and the photoresist is subjected to chemical reaction after exposure, so that the photoetching pattern related to the mask pattern is obtained on a wafer.
According to the diffraction and interference principle of light waves, light waves are diffracted when passing through a mask, and light waves between different positions of the mask are interfered, so that the light intensity distribution actually projected on a wafer is a superposition result of the diffracted light waves, which is not identical to the pattern on the mask, and the phenomenon that the photoetching pattern deviates from the mask pattern due to light wave diffraction and interference is called optical proximity effect (optical proximity effect).
Because of the diffraction effect, in general, when the line width on the wafer is smaller than the exposure wavelength, the diffraction effect of light is very obvious, the deviation between the photoetching pattern and the mask pattern formed on the wafer is not negligible, and as the feature size of the integrated circuit is continuously reduced, the deviation between the photoetching pattern and the mask pattern is more and more serious, while the existing optical proximity effect, the correction process is relatively lengthy, occupies a large amount of computer software and hardware system resources, and has low correction efficiency. Therefore, it is needed to develop an efficient optical proximity correction method.
Disclosure of Invention
The present invention is directed to a method, an apparatus and a mask for correcting optical proximity effect when the rule is complex.
In order to achieve the above purpose, the present invention adopts the following technical scheme: a correction method of optical proximity effect comprises the following steps: obtaining a test pattern; exposing the mask based on the test pattern to obtain exposure data; establishing an OPC first rule base based on the corresponding relation between the data of the test pattern and the exposure data; determining a key region of the layout to be corrected, and obtaining graphic characteristic parameters of the key region; screening the OPC first rule base according to the graphic characteristic parameters of the key areas to obtain an OPC second rule base; and correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
Optionally, screening the OPC first rule base according to the graphic feature parameters of the key area to obtain an OPC second rule base, including: and determining an OPC second rule base according to the matching result of the graph characteristic parameters of the key area and the correction rules corresponding to the corresponding relations in the OPC first rule base.
Optionally, determining the OPC second rule base according to a matching result of the graphic feature parameter of the key area and the correction rule corresponding to each corresponding relation in the OPC first rule base includes: determining data of a target test pattern matched with pattern feature parameters of a key area in an OPC first rule base, and correcting rules corresponding to the data of the target test pattern, wherein the correction rules belong to an OPC second rule base;
or alternatively, the process may be performed,
determining target exposure data matched with graphic feature parameters of a key area in an OPC first rule base, and correcting rules corresponding to the target exposure data, wherein the target exposure data and the correction rules belong to an OPC second rule base.
Optionally, the data of the test pattern includes at least one of a line width, a space, and a period of the test pattern, and the exposure data includes at least one of a line width, a space, and a period of the exposure pattern, and the data of the test pattern corresponds to the exposure data.
Optionally, determining the key region of the layout to be corrected includes: dividing the area of the layout to be corrected to determine the key area and the non-key area of the layout to be corrected;
correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, so as to manufacture a mask for exposure based on the corrected layout, comprising: and correcting the key area of the layout to be corrected based on the OPC second rule base to obtain a corrected layout, so as to manufacture a mask for exposure based on the corrected layout.
Optionally, the critical area includes a pattern that bears an electrical property, and the pattern characteristic parameter of the critical area includes at least one of a line width, a spacing, and a period of the pattern that bears the electrical property.
Optionally, correcting the key region of the layout to be corrected based on the OPC second rule base to obtain a corrected layout, including: and correcting the key region of the layout to be corrected based on the OPC second rule base by taking the line width and the interval of the key region of the layout to be corrected as judging conditions to obtain the corrected layout.
Optionally, the exposure conditions of the mask made based on the corrected layout are the same as those of the mask based on the test pattern.
The invention also provides a device for correcting the optical proximity effect, which comprises:
the acquisition unit is used for acquiring a test pattern;
an exposure unit for exposing the mask based on the test pattern to obtain exposure data;
the establishing unit is used for establishing an OPC first rule base based on the corresponding relation between the data of the test pattern and the exposure data;
the processing unit is used for determining a key region of the layout to be corrected and obtaining graphic characteristic parameters of the key region;
the screening unit is used for screening the OPC first rule base according to the graphic characteristic parameters of the key area to obtain an OPC second rule base;
the correction unit is used for correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout.
The invention also provides a mask formed by the method for correcting the optical proximity effect.
The method comprises the steps of determining a key area of a layout to be corrected to obtain graphic feature parameters of the key area, wherein the graphic feature parameters of the key area are generally concentrated in a certain range, screening an OPC first rule base according to the graphic feature parameters of the key area, namely forming an OPC second rule base according to rules in the OPC first rule base matched with the graphic feature parameters of the key area, removing the rest mismatching, reducing the number of rules in the OPC first rule base through screening to obtain an OPC second rule base, correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout. According to the invention, the number of rules in correction is reduced, so that the occupation of software and hardware resources of a computer is reduced, the running time of optical proximity effect correction is shortened, and the correction efficiency is improved; meanwhile, key areas are screened out for correction, so that the optical proximity effect correction efficiency is further improved. Meanwhile, the mask formed by the correction method of the optical proximity effect improves the fidelity of the exposed pattern.
Drawings
FIG. 1 is a schematic diagram of a typical EUV exposure system;
FIG. 2 is a schematic illustration of a line in a mask pattern after exposure;
FIG. 3 is a flow chart of a method for correcting optical proximity effects in one embodiment of the present invention;
FIG. 4 is a schematic diagram of a test pattern designed in one embodiment of the present invention;
FIG. 5 is a pictorial illustration of a version to be modified in one embodiment provided by the present invention;
FIG. 6 is a schematic view of a region division of a version to be corrected in an embodiment provided by the invention;
FIG. 7 is a block diagram of an apparatus for correcting optical proximity effects according to an embodiment of the present invention;
FIG. 8 is a mask modified without using an optical proximity correction method in accordance with one embodiment of the present invention;
FIG. 9 is a lithographic pattern after exposure of a mask that has not been corrected by a correction for optical proximity effects in one embodiment provided by the present invention;
FIG. 10 is a diagram of a mask corrected by an optical proximity correction method according to an embodiment of the present invention;
FIG. 11 is a schematic illustration of a lithographic pattern of a mask after exposure corrected by the optical proximity correction method according to an embodiment of the present invention.
Wherein: 1. light source, first lens, mask, second lens, third lens, photoresist, wafer, non-critical area, acquisition unit, exposure unit, build unit, processing unit, screening unit, and correction unit, and the like.
Detailed Description
The following describes specific embodiments according to the present invention with reference to the drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those described herein, and therefore the present invention is not limited to the specific embodiments disclosed below.
Fig. 1 is a schematic diagram of a typical euv exposure system, in which light from a light source 1 is irradiated onto a mask 3 through a first lens 2, a mask pattern to be transferred is provided on the mask 3, the mask pattern on the mask 3 corresponds to an obstacle on a propagation path for an optical wave, the mask pattern is projected onto a photoresist 6 through a projection system composed of a second lens 4 and a third lens 5, and the photoresist 6 is subjected to chemical reaction after exposure, so that a photolithography pattern related to an original mask pattern is obtained on a wafer 7.
Fig. 2 is a schematic diagram of mask pattern exposure, and it can be seen from fig. 2 that when the mask pattern line width is 200 nm, the period is 460 nm, that is, the addition of 200 nm line width and 260 nm interval equals to the period, and the line width after the mask pattern exposure becomes 192.9 nm, that is, the difference from the line width before the mask pattern exposure is 7.1 nm, so that Optical Proximity Correction (OPC) is required to enhance the pattern fidelity.
In general, due to the existence of diffraction effect, when the line width of the layout to be corrected is smaller than the exposure wavelength, optical Proximity Correction (OPC) must be performed on the layout to be corrected, if a 248 nm wavelength photoetching machine is used, when the line width of the pattern is less than 250 nm, simple correction must be used; when the line width is <180 nm, very complicated correction is required, otherwise the resulting photolithographic pattern on the wafer 7 and the original mask pattern may be very different. The number of actual layouts to be corrected is huge, and correction rules are also many. When the layout is large and the rule is complicated, the time consumed for correcting the layout to be corrected is considerable, for example, about 3000 lines of rule correction is performed for a layout area of 5 mm×5 mm, which takes several tens of minutes or more.
In order to solve the problems that the number of actual to-be-corrected version graphs is huge, correction rules are too many, more computer software and hardware resources are occupied, correction operation time is long, and correction efficiency is very low, the invention provides an optical proximity effect correction method, a correction device and a mask. The method reduces the number of rules in the OPC first rule base to obtain the OPC second rule base, and corrects the layout to be corrected based on the OPC second rule base. Meanwhile, the key area 9 is screened out for correction, the correction range is small, and the correction efficiency of the optical proximity effect is further improved. The mask formed by the correction method of the optical proximity effect improves the fidelity of the pattern after mask exposure.
Referring to fig. 3-6, the present invention provides a correction method for optical proximity effect, which can shorten correction operation time and improve correction efficiency, comprising the following steps:
s100: test patterns were obtained, see fig. 4.
It should be noted that, first, a test pattern is obtained, the test pattern covers patterns of various conditions of line width (CD) nodes, and only a periodic line is taken as an example, when the line width is 180 nm, a period of 360 nm, a period of 370 nm, and a period of 380 nm … … are designed until a very large period. Likewise, a line width of 190 nm and a line width of 200 nm are designed correspondingly for a number of cycles up to a large cycle. The sum of the interval between each periodic line and the line width in the test pattern is equal to the period, and the sum of the line width and the interval of the periodic line is also equal to the period in the following description.
And obtaining test pattern data, in this embodiment, it is not particularly limited to the step of collecting the test pattern data, but may also collect the test pattern data in a later step, where the test pattern data includes at least one of a line width, a space, and a period of the test pattern, such as a line width, or a line width and a period. The test pattern storage format is a layout file, such as testpatterns.
S101: the mask 3 based on the test pattern is exposed to light to obtain exposure data.
The test pattern obtained in step S100 is first placed on the mask 3 by direct electron beam writing, and the mask 3 carrying the test pattern is exposed according to exposure conditions such as a light source shape, an exposure dose, an exposure time, and the like (see fig. 2). Specifically, if the line width of the test pattern is 200 nm and the period is 400 nm, the line width after exposure is 190 nm; testing the line width of the pattern to 190 nanometers and the period to 400 nanometers, wherein the line width after exposure is 186 nanometers; the period after and before exposure of the test pattern was unchanged. Exposure data after exposure of the mask 3 based on the test pattern is collected.
S102: and establishing an OPC first rule base based on the corresponding relation between the data of the test pattern and the exposure data.
It should be noted that, the data of the test pattern at least includes one of a line width, a space and a period of the test pattern; the exposure data includes at least one of line width, interval and period after the test pattern is exposed. For example: the linewidth of the test pattern is 200 nanometers, the period is 400 nanometers, and the linewidth after exposure is 190 nanometers; the line width of the test pattern is 190 nanometers, the period is 400 nanometers, the line width after exposure is 186 nanometers, and the period before and after exposure of the test pattern is unchanged, so that the line width of the test pattern is 190 nanometers, and the line width of the test pattern is required to be increased to 200 nanometers when the period is 400 nanometers, so that the required line width of 190 nanometers can be obtained. Establishing an OPC first rule base based on the data of the test patterns and the exposure data of the test patterns after exposure, wherein the data of the test patterns correspond to the exposure data, namely the data types are consistent, and particularly, if the collected data of the test patterns are line widths, the exposure data are line widths; the data of the test pattern is the line width and period, and the exposure data is the line width and period.
S103: and determining a key region 9 of the layout to be corrected, and obtaining the graphic characteristic parameters of the key region 9.
It should be noted that, the file format of the to-be-corrected version is gds file or oas file, and the actual to-be-corrected version is quite complex and contains a large number of graphics (see fig. 5-6).
Before the correction of the to-be-corrected version, the to-be-corrected version is divided into a critical area 9 and a non-critical area 8, wherein the patterns in the critical area 9 are patterns for bearing electrical performance, namely the integrated circuit, and the patterns in the non-critical area 8 are patterns for other purposes such as manufacturing process or measurement, such as redundant patterns, measurement marks for subsequent processes, layer numbers, overlay marks, alignment marks and the like. After the regions are divided, the statistics of the graphic feature parameters of the key regions 9 are performed, and it can be seen that the graphic feature parameters of the key regions 9 are generally concentrated in a certain range (see fig. 6), and the graphic feature parameters of the key regions 9 include at least one of a line width, a space, and a period, such as a line width, or a line width and a period.
S104: and screening the OPC first rule base according to the graphic characteristic parameters of the key area 9 to obtain an OPC second rule base.
In step S103, a graphic feature parameter including at least any one of line width, interval, and period is obtained, and the OPC first rule base is screened according to the graphic feature parameter of the key region 9 obtained by statistics. Specifically, a matching result of the graphic feature parameters of the key area 9 and correction rules corresponding to the corresponding relations in the OPC first rule base is used as an OPC second rule base. Target test pattern data or target exposure data which are matched with pattern feature parameters of the key region 9 are used as a second rule base, and correction rules of the corresponding relation between the test pattern data and the exposure data are used as a second rule base; the correction rule of the correspondence between the test pattern data or the exposure data and the pattern feature of the key region 9 is a rule unnecessary for the layout to be corrected, and the correction rule is removed. For example, if the statistics shows that the graph with the line width of 180 nanometers does not exist in the layout to be corrected, the rule with the line width of 180 nanometers is removed before correction is performed, and an OPC second rule base is obtained, so that the number of rules in the rule base is reduced, the utilization of software and hardware resources of a computer is reduced, the running time of optical proximity effect correction is shortened, and the optical proximity effect correction efficiency is improved.
It should be noted that, since the correction rule is a correspondence between the test pattern data and the exposure data, or even between the test pattern and the correction data, the matching correction rule may be determined as the second rule base by determining the test pattern data or the exposure data that matches the image feature parameter.
S105: and correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask 3 for exposure based on the corrected layout.
Specifically, the critical area 9 of the layout to be corrected is corrected based on the OPC second rule base, and the corrected layout is obtained, so that a mask for exposure is manufactured based on the corrected layout.
Based on the OPC second rule base, line width and interval, line width and period, or interval and period in the key region 9 of the layout to be corrected are used as judging conditions during correction, and EDA tools are used for correcting the key region 9 of the layout to be corrected. For example, in a critical area 9 of the layout to be corrected, the line width of the graph is greater than or equal to 200 nanometers and less than 210 nanometers, and the interval is between 260 nanometers and 270 nanometers, and the line width of the graph needs to be reduced by 1 nanometer, i.e. the first half part is a judging condition, and the second half part is a correction quantity; after obtaining the corrected layout, the corrected layout is placed on the mask 3 by means of direct writing of electron beams, and subsequent procedures such as exposure are performed under the same exposure conditions as those of the test pattern in step S101. Because the key area 9 is screened for correction, the range is small, the running time of the optical proximity correction is shortened, and the optical proximity correction efficiency is further improved.
Referring to fig. 7, the present invention further provides a device for correcting optical proximity effect, including:
an acquisition unit 10 for acquiring a test pattern;
an exposure unit 11 for exposing the test pattern-based mask 3 to obtain exposure data;
a building unit 12, configured to build an OPC first rule base based on a correspondence relationship between data of the test pattern and exposure data;
the processing unit 13 is used for determining a key region 9 of the layout to be corrected and obtaining graphic characteristic parameters of the key region 9;
a screening unit 14, configured to screen the OPC first rule base according to the graphic feature parameters of the key area 9 to obtain an OPC second rule base;
and the correction unit 15 is used for correcting the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing the mask 3 for exposure based on the corrected layout.
The screening unit 14 determines an OPC second rule base according to the matching result of the graphic feature parameters of the key area 9 and the correction rules corresponding to the corresponding relations in the OPC first rule base.
The OPC second rule base includes: a correction rule corresponding to the data of the target test pattern or a correction rule corresponding to the target exposure data, wherein the data of the target test pattern and the target exposure data comprise data matched with pattern feature parameters of the key region 9 in the OPC first rule base.
The data of the test pattern includes at least one of a line width, a space, and a period of the test pattern, and the exposure data includes at least one of a line width, a space, and a period of the exposure pattern, the data of the test pattern corresponding to the exposure data.
The processing unit 13 determines the critical area 9 and the non-critical area 8 of the layout to be corrected by carrying out area division on the layout to be corrected, and obtains the graphic characteristic parameters of the critical area 9.
The correction unit 15 corrects the key region 9 of the layout to be corrected based on the OPC second rule base in particular, to obtain a corrected layout, so as to manufacture a mask for exposure based on the corrected layout.
The critical area 9 includes a pattern that is responsible for the electrical performance, and the pattern characteristic parameter of the critical area 9 includes at least one of a line width, a spacing, and a period of the pattern that is responsible for the electrical performance.
The correction unit 15 corrects the critical area 9 of the layout to be corrected based on the OPC second rule base by taking the line width and the interval of the critical area 9 of the layout to be corrected as judgment conditions, and obtains the corrected layout.
The exposure conditions of the mask fabricated based on the corrected layout are the same as those of the mask based on the test pattern.
Referring to fig. 8-11, the present invention further provides a mask 3 formed by the above-mentioned optical proximity effect correction method, wherein the mask 3 is provided with a mask pattern. In a larger technology node, a primary mask (see fig. 8) is used as a layout to be corrected, when the line width in the primary mask is smaller than the exposure wavelength, optical proximity effect correction must be performed on the primary mask, otherwise, the lithography pattern (see fig. 9) obtained on the wafer and the primary mask (see fig. 8) which we want can cause distortion of the pattern corners and boundaries due to interference and diffraction effects, and great deviation is generated. The original mask (see fig. 8) is corrected by using the optical proximity correction method of the present invention to obtain a corrected mask 3 (see fig. 10), and the corrected mask 3 is subjected to subsequent procedures such as exposure under the same exposure conditions as the test pattern, to finally obtain a lithographic pattern after exposure of the corrected mask 3 (see fig. 11). Referring to fig. 8 to 11, it is apparent that the deviation of the photolithography pattern (see fig. 11) obtained by exposing the mask 3 (see fig. 10) corrected by the optical proximity correction method of the present invention from the original mask pattern (see fig. 8) is smaller, and the fidelity of the pattern after exposure is improved.
In summary, before correction, the layout to be corrected is divided into a critical area 9 and a non-critical area 8, the graphic feature parameters of the critical area 9 are generally concentrated in a certain range, the graphic feature parameters of the critical area 9 are counted to obtain the graphic feature parameters at least comprising one of line width, interval and period, the OPC first rule base is screened according to the counted graphic feature parameters, the matching result of the correction rules corresponding to the graphic feature parameters of the critical area 9 and each corresponding relation in the OPC first rule base is used as an OPC second rule base, the test graphic data or exposure data which is to be matched with the graphic feature parameters of the critical area 9 is used as a second rule base; the correction rule of the correspondence between the test pattern data or the exposure data and the pattern feature of the key region 9 is a rule unnecessary for the layout to be corrected, and the correction rule is removed. Therefore, the number of rules in a rule base is reduced, the occupation of software and hardware resources of a computer is reduced, the running time of optical proximity effect correction is shortened, and the optical proximity effect correction efficiency is improved; meanwhile, the key area 9 is screened out for correction, so that the optical proximity effect correction efficiency is further improved; the mask 3 formed by the optical proximity correction method improves the fidelity of the exposed pattern.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method for correcting an optical proximity effect, comprising:
obtaining a test pattern;
exposing a mask based on the test pattern to obtain exposure data;
establishing an optical proximity effect correction OPC first rule base based on the corresponding relation between the data of the test pattern and the exposure data;
determining a key region of a layout to be corrected, and obtaining graphic characteristic parameters of the key region;
screening the OPC first rule base according to the graphic characteristic parameters of the key areas to obtain an OPC second rule base;
correcting the to-be-corrected version graph based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout;
the determining the key area of the layout to be corrected comprises the following steps:
dividing the region of the to-be-corrected version graph to determine a key region and a non-key region of the to-be-corrected version graph;
the correcting the to-be-corrected version graph based on the OPC second rule base to obtain a corrected layout, so as to manufacture a mask for exposure based on the corrected layout, comprising:
correcting the key area of the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout;
the key region comprises a graph bearing electrical performance, and the graph characteristic parameter of the key region at least comprises one of line width, interval and period of the graph bearing electrical performance.
2. The correction method according to claim 1, characterized in that: the step of screening the OPC first rule base according to the graphic feature parameters of the key area to obtain the OPC second rule base comprises the following steps:
and determining the OPC second rule base according to the matching result of the graphic characteristic parameters of the key area and the correction rules corresponding to the corresponding relations in the OPC first rule base.
3. The correction method according to claim 2, wherein the determining the OPC second rule base according to the matching result of the correction rule corresponding to each of the correspondence relations in the key area and the graphic feature parameter of the key area includes:
determining data of a target test pattern matched with pattern feature parameters of the key region in the OPC first rule base, and correcting rules corresponding to the data of the target test pattern, wherein the correction rules belong to the OPC second rule base;
or alternatively, the process may be performed,
and determining target exposure data matched with the graphic feature parameters of the key area in the OPC first rule base, and correcting rules corresponding to the target exposure data, wherein the correction rules belong to the OPC second rule base.
4. The correction method according to claim 1, characterized in that: the data of the test pattern at least comprises one of line width, interval and period of the test pattern, and the exposure data at least comprises one of line width, interval and period of the exposure pattern, and the data of the test pattern corresponds to the exposure data.
5. The correction method according to claim 1, characterized in that: the correcting the key area of the layout to be corrected based on the OPC second rule base to obtain a corrected layout comprises the following steps:
and correcting the key region of the layout to be corrected based on the OPC second rule base by taking the line width and the interval of the key region of the layout to be corrected as judging conditions to obtain the corrected layout.
6. The correction method according to claim 1, characterized in that: the exposure conditions of the mask manufactured based on the corrected layout are the same as the exposure conditions of the mask based on the test pattern.
7. An optical proximity correction device, comprising:
the acquisition unit is used for acquiring a test pattern;
an exposure unit for exposing the mask based on the test pattern to obtain exposure data;
the establishing unit is used for establishing an OPC first rule base based on the corresponding relation between the data of the test pattern and the exposure data;
the processing unit is used for determining a key area of the layout to be corrected and obtaining graphic characteristic parameters of the key area;
the screening unit is used for screening the OPC first rule base according to the graphic characteristic parameters of the key area to obtain an OPC second rule base;
the correction unit is used for correcting the to-be-corrected version graph based on the OPC second rule base to obtain a corrected layout, and a mask for exposure is manufactured based on the corrected layout;
the processing unit includes:
the processing subunit is used for carrying out area division on the to-be-corrected version graph so as to determine a key area and a non-key area of the to-be-corrected version graph;
the correction unit includes:
the correction subunit is used for correcting the key area of the layout to be corrected based on the OPC second rule base to obtain a corrected layout, and manufacturing a mask for exposure based on the corrected layout;
wherein the key region comprises a graph bearing electrical performance, and the graph characteristic parameter of the key region at least comprises one of line width, interval and period of the graph bearing electrical performance.
8. A mask, comprising: a mask formed by the correction method of any one of claims 1-6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911039992.8A CN110716386B (en) | 2019-10-29 | 2019-10-29 | Optical proximity effect correction method, optical proximity effect correction device and mask |
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| CN201911039992.8A CN110716386B (en) | 2019-10-29 | 2019-10-29 | Optical proximity effect correction method, optical proximity effect correction device and mask |
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| CN110716386A CN110716386A (en) | 2020-01-21 |
| CN110716386B true CN110716386B (en) | 2023-10-20 |
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| CN111929983A (en) * | 2020-06-28 | 2020-11-13 | 中国科学院上海光学精密机械研究所 | Method for screening key graph of full-chip light source mask optimization based on polygonal region representation |
| CN111948899B (en) * | 2020-08-18 | 2024-02-02 | 上海华力微电子有限公司 | Authentication method of green layout and risk judging method of early warning points |
| CN113406859B (en) * | 2021-08-19 | 2021-11-26 | 南京晶驱集成电路有限公司 | Modeling method of optical proximity correction model |
| US20240077799A1 (en) * | 2021-11-02 | 2024-03-07 | Institute of Microelectronics, Chinese Academy of Sciences | Method for correcting lithography pattern of surface plasma |
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