522466 Λ7 B7 8464pif.doc/006 五、發明說明（/) 發明領域 本發明是有關於電子束補正方法及電子束曝光裝置， 且本專利與下面所述之日本專利有關。至於被編入參照文 獻的指定國，根據下面所述的專利，編入本專利，做爲本 專利的一部分。 •申請專利號碼2000-348462 申請日期平成12年11月15曰 發明背景 近年來隨著半導體元件（device)的細微化，期盼曝光 裝置與電子束照射位置的補正處理能朝高速化的方向發 展，以利電子束曝光裝置之半導體元件的量產。 但是習知的電子束曝光裝置，爲了補正所有電子束 的照射位置，必須檢出所有電子束的照射位置，因此需花 費相當長的時間，故殷切期盼能在短時間內就能補正電子 束之照射位置的方法。 因此，本發明提供了可以解決上述問題的電子束補 正方法及電子束曝光裝置。組合申請專利範圍獨立項所記 載的特徵就能達成此目的，而從屬項規定了本發明更有利 的具體實例。 發明槪述 爲了達成上述的目的，根據本發明的第1實施例， 本發明所採用的電子束補正方法是在將晶片（wafer)曝光的 4 (請先閱讀背面之注意事項再填寫本頁) I丨—丨訂i丨！！-線赢 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNSM1規格（210 X 297公釐） 522466 Λ7 H7 經濟部智慧財產局員工消費合作社印製 8464pif.d〇c/〇〇6 五、發明說明（2) 電子束曝光裝置中，以兩個以上的電子束來補正兩個以上 電子束的照射位置。它具有檢出2個以上之電子束中至少 1個電子束之照射位置座標的檢出階段，以及根據所檢出 的座標’算出補正1個被檢出座標之電子束以外至少1個 其它電子束之照射位置之補正値的算出階段。 •電子束曝光裝置具有預先儲存1個電子束與其它電 子束之位置關係的儲存方法，算出階段也可使用儲存方法 所儲存的位置關係，算出補正其它電子束之照射位置的補 正値。 電子束曝光裝置具有產生2個以上之電子束的電子 束產生部，以及讓2個以上之電子束各自通過，具有2個 以上開口部的構件。檢出階段也可檢出2個以上之電子束 之的1個電子束的照射位置的座標，算出階段則根據所檢 出的座標，利用電子束曝光裝置構件全體均等伸縮與旋轉 的一方，也可算出補正照射位置的1個座標被檢出之電子 束以外之電子束照射位置偏移的補正値。 檢出階段也可檢出1個座標被檢出之電子束的照射 位置，算出階段則根據所檢出的照射位置，利用電子束曝 光裝置構件的全體均等伸縮與旋轉的一方，算出補正照射 位置被檢出之電子束以外之電子束以外之電子束照射位置 偏移的補正値。 檢出階段也可檢出1個座標被檢出之電子束的照射 位置，算出階段則根據所檢出的照射位置，利用電子束曝 光裝置構件的平行移動，算出補正照射位置被檢出之電子 5 本紙張尺度適用中國國家標準（CNSM1規格（21〇χ 297公坌） (請先閲讀背面之注意事項再填寫本頁)522466 Λ7 B7 8464pif.doc / 006 V. Description of the Invention (/) Field of the Invention The present invention relates to an electron beam correction method and an electron beam exposure device, and this patent is related to the Japanese patent described below. As for the designated country incorporated in the reference, the patent is incorporated as part of this patent based on the patents described below. • Patent application number 2000-348462 Application date: November 15, 2012 Background of the invention In recent years, with the miniaturization of semiconductor devices, it is expected that the correction process of the exposure position of the exposure device and the electron beam can be developed at a higher speed. To facilitate mass production of semiconductor components for electron beam exposure devices. However, in the conventional electron beam exposure device, in order to correct the irradiation positions of all the electron beams, it is necessary to detect the irradiation positions of all the electron beams, so it takes a long time, so it is eagerly expected that the electron beams can be corrected in a short time. Method of irradiation position. Therefore, the present invention provides an electron beam correction method and an electron beam exposure apparatus which can solve the above problems. This can be achieved by combining the features described in the independent items of the patent application scope, while the dependent items provide more advantageous specific examples of the invention. Description of the Invention In order to achieve the above-mentioned object, according to the first embodiment of the present invention, the electron beam correction method used in the present invention is to expose the wafer (wafer) 4 (Please read the precautions on the back before filling this page) I 丨 — 丨 Order i 丨! !! -Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with Chinese national standards (CNSM1 specification (210 X 297 mm) 522466 Λ7 H7 Printed by the Employee Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 8464pif.d〇c / 〇 〇5. Description of the invention (2) In the electron beam exposure device, two or more electron beams are used to correct the irradiation positions of two or more electron beams. It has the ability to detect at least one of the two or more electron beams. The detection stage of the irradiation position coordinates, and the calculation stage of calculating the correction position of the irradiation position of at least one other electron beam other than the electron beam of one detected coordinate based on the detected coordinates. • The electron beam exposure device has A storage method for storing the positional relationship between one electron beam and other electron beams is stored in advance, and the positional relationship stored in the storage method can also be used in the calculation stage to calculate a correction frame that corrects the irradiation position of other electron beams. The electron beam exposure device has two generating units. The electron beam generating part of the above electron beam, and a member having two or more openings for passing each of the two or more electron beams. The coordinates of the irradiation position of one electron beam among two or more electron beams can also be detected at the exit stage. The calculation stage can be based on the detected coordinates, using the entire electron beam exposure device to uniformly expand and rotate. Calculate the correction position of the electron beam irradiation position deviation other than the detected electron beam of the coordinate correction irradiation position. The detection stage can also detect the irradiation position of the electron beam detected by one coordinate, and the calculation stage is based on The detected irradiation position is calculated by using one of the entire electron beam exposure device members to expand and contract uniformly and to rotate, so as to correct the correction position of the electron beam irradiation position deviation other than the electron beam detected at the irradiation position. The irradiation position of the electron beam detected by one coordinate can also be detected at the stage. In the calculation stage, 5 electrons detected at the corrected irradiation position are calculated based on the detected irradiation position by using the parallel movement of the electron beam exposure device member. Paper size applies to Chinese national standards (CNSM1 specification (21〇χ 297 cm)) (Please read the precautions on the back before filling this page)
522466 8464pif.doc/006 __B7___ _ — _ 五、發明說明（> ) 束以外之電子束照射位置偏移的補正値。 電子束產生部也可產生3個以上的電子束’其構件 具有讓3個以上之電子束各自通過的開口部，檢出階段含 有檢出3個以上之電子束當中的2個電子束之照射位置的 階段，算出階段則根據2個電子束的照射位置’利用電子 束曝光裝置構件的全體均等伸縮、旋轉及平行移動’算出 補正2個電子束以外之電子束照射位置偏移的補正値。 電子束產生部也可產生4個以上的電子束’其構件 具有讓4個以上的電子束各自通過的開口部，檢出階段包 含檢出4個以上的電子束當中3個電子束之照射位置的階 段，算出階段則根據3個電子束的照射位置，利用電子束 曝光裝置構件的旋轉、平行移動、以及對2個正交方向的 伸縮，算出3個電子束以外之電子束照射位置偏移的補正 値。 電子束產生部也可產生5個以上的電子束，其構件 具有讓5個以上的電子束各自通過的開口部，檢出階段包 含檢出5個以上的電子束當中至少4個電子束之照射位置 的階段，算出階段則根據至少4個電子束的照射位置，利 用電子束曝光裝置構件的旋轉、平行移動、非線形移動以 及對2個正交方向的伸縮，算出至少4個電子束以外之電 子束照射位置偏移的補正値。 也可具有再檢出至少1個電子束之照射位置之座標 的再檢出階段，以及根據在檢出階段所檢出的座標與再檢 出階段所檢出的座標，再度算出補正値的再算出階段。 6 本紙張尺度適用中國國家標準（CNS)A丨規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) -ϋ 1 n fi ·1 ϋ n^eJ0 n 1_1 mmf I I n ϋ 經濟部智慧財產局員工消費合作社印製 522466 Λ7 B7 8464pif.doc/〇〇6 五、發明說明（I) 還具有各自校正2個以上之電子束的校正階段，算 出階段也可根據所校正之2個以上之電子束的校正照射位 置算出補正値。 電子束曝光裝置還具有承載晶片的晶片臺（wafer stage)，晶片臺具有檢出2個電子束之照射位置用的標記 (mark)部，檢出階段也可使用相同的標記部檢出2個電子 束各自的照射位置。 根據本發明的第2實施例，它是一種以2個以上的 電子束使晶片曝光的電子束曝光裝置，它具有產生2個以 上電子束的電子槍、使2個以上的電子束各自獨立偏向的 偏向部，承載晶片的晶片臺、設在晶片臺上以檢出2個以 上之電子束中至少1個電子束之照射位置的標記部、檢出 在標記部上被照射至少1個電子束的反射電子，將對應於 被檢出之反射電子之量的檢出信號輸出的電子檢出部、根 據檢出信號至少檢出1個電子束之照射位置座標的位置檢 出部、根據所檢出的座標算出補正座標被檢出之電子束以 外之電子束照射位置之補正値的算出部、以及根據補正値 控制座標被檢出之電子束以外之電子束偏向的偏向控制 部。 而且還具有形成2個以上電子束各自的斷面形狀， 有2個以上縫隙的縫隙部、以及使2個以上電子束各自聚 焦，有2個以上電子透鏡（lens)的電子透鏡部，算出部也 可根據所檢出的座標，利用偏向部、縫隙部、電子透鏡咅B 中至少1種的伸縮、旋轉或平行移動，以算出座標被檢出 7 (請先閱讀背面之注意事項再填寫本頁) 訂---------線‘ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)Al規恪（21〇χ 297公釐） 137522466 8464pif.doc/〇〇6 五、發明說明（G) 之電子束以外之電子束照射位置偏移的補正値。 (請先閱讀背面之注意事項再填寫本頁) 且上述的發明槪要並未列舉出本發明必要的所有特 徵，故聯合這些特徵群的部分特徵也可形成新的發明。 之簡單說明 •圖1表與本發明之一實施例有關之電子束曝光裝置 100的構造。 圖2表電子束曝光裝置100的動作流程全圖。 圖3表在照射位置補正階段（S60)，電子束曝光裝置1〇〇 的動作。 圖子槍104的排列例與晶片臺46之一例。 圖養g照射位置檢出階段（S80)中，電子束之照射位 置檢出—例。522466 8464pif.doc / 006 __B7___ _ — _ 5. Explanation of the invention (&) The correction of the deviation of the irradiation position of the electron beam other than the beam. The electron beam generating section can also generate three or more electron beams. Its members have openings through which three or more electron beams can pass. The detection stage includes irradiation of two electron beams among three or more electron beams detected. In the position stage, the calculation stage calculates a correction frame that corrects the deviation of the irradiation position of the electron beams other than the two electron beams based on the irradiation positions of the two electron beams 'using the entire telescope, rotation, and parallel movement of the entire electron beam exposure device member'. The electron beam generating section can also generate four or more electron beams. Its member has an opening for allowing each of the four or more electron beams to pass through. The detection stage includes detecting the irradiation position of three electron beams among the four or more electron beams. The calculation stage is based on the irradiation positions of the three electron beams, using the rotation, parallel movement, and expansion and contraction of the two orthogonal directions of the components of the electron beam exposure device to calculate the deviation of the irradiation positions of the electron beams other than the three electron beams. Correction. The electron beam generating unit can also generate 5 or more electron beams, and its member has an opening for allowing each of the 5 or more electron beams to pass through. The detection stage includes detecting the irradiation of at least 4 of the 5 or more electron beams. The position stage, the calculation stage is based on the irradiation position of at least 4 electron beams, using the rotation, parallel movement, non-linear movement and expansion and contraction of 2 orthogonal directions of the components of the electron beam exposure device to calculate electrons other than at least 4 electron beams Correction of deviation of beam irradiation position. It is also possible to have a re-detection stage for re-detecting the coordinates of the irradiation position of at least one electron beam, and to calculate the re-correction of the correction frame based on the coordinates detected in the detection stage and the coordinates detected in the re-detection stage. Calculate the stages. 6 This paper size applies to China National Standard (CNS) A 丨 specifications (210 x 297 mm) (Please read the notes on the back before filling this page)-) 1 n fi · 1 1 n ^ eJ0 n 1_1 mmf II n印 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 522466 Λ7 B7 8464pif.doc / 〇〇6 V. Description of the invention (I) There is also a correction stage for each of two or more electron beams. The calculation stage can also be based on the corrected A correction beam is calculated from the correction irradiation positions of two or more electron beams. The electron beam exposure apparatus further includes a wafer stage on which a wafer is carried. The wafer stage has a mark unit for detecting the irradiation positions of the two electron beams, and the same mark unit can be used to detect two at the detection stage. The respective irradiation positions of the electron beams. According to a second embodiment of the present invention, it is an electron beam exposure device that exposes a wafer with two or more electron beams. The electron beam exposure device has an electron gun that generates two or more electron beams, and independently biases two or more electron beams. The deflection section includes a wafer stage carrying a wafer, a marking section provided on the wafer stage to detect an irradiation position of at least one of the two or more electron beams, and a detection section for detecting at least one electron beam irradiated on the marking section. Reflected electrons, an electronic detection unit that outputs a detection signal corresponding to the amount of detected reflected electrons, a position detection unit that detects at least one electron beam irradiation position coordinate based on the detection signal, and A calculation unit that calculates a correction beam for correcting the irradiation position of the electron beam other than the detected electron beam of the coordinate, and a deflection control unit that controls the deviation of the electron beam other than the detected electron beam based on the correction beam. In addition, it also has a slot shape that forms each of two or more electron beams, a slit portion that has two or more slits, and an electron lens unit that focuses each of the two or more electron beams and has two or more electron lenses, and a calculation unit. You can also use at least one of the deflection, gap, and electronic lens 咅 B based on the detected coordinates to calculate the coordinates detected. 7 (Please read the precautions on the back before filling in this Page) Order --------- Line 'Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with Chinese National Standard (CNS) Al (21〇χ 297 mm) 137522466 8464pif.doc / 〇 06 V. Explanation of the invention (G) Correction of deviation of the irradiation position of the electron beam other than the electron beam. (Please read the notes on the back before filling out this page.) And the above invention does not list all the features necessary for the present invention, so combining some features of these feature groups can also form a new invention. Brief Description • FIG. 1 shows the configuration of an electron beam exposure apparatus 100 related to one embodiment of the present invention. FIG. 2 is a flowchart of the entire operation of the electron beam exposure apparatus 100. FIG. 3 shows the operation of the electron beam exposure apparatus 100 in the irradiation position correction stage (S60). An example of the arrangement of the sub guns 104 and an example of the wafer stage 46. In the phase of detecting the irradiation position (S80) in FIG. 5, the irradiation position of the electron beam is detected—for example.
Jg[式之標記說明·· 8.筐體 1〇.電子束產生部 12·陰極 14·第1成形構 件 16·第1多軸電子透鏡 18.第1成形偏向部 2〇 經濟部智慧財產局員工消費合作社印製 第2成形偏向部 22.第2成形構件 24·第2多軸電 子透鏡 26·消隱電極陣列 28·電子束遮蔽構件 34 第3多軸電子透鏡 36·第4多軸電子透鏡 38偏向 部 40·電子檢出部 44·晶片 46.晶片臺 48.晶片 臺驅動部 52.第5多軸電子透鏡 56·標記部 58·鏡 部 6 0.激光干涉儀 8 0.電子束控制部 8 2.多軸電子 透鏡控制部 84.成形偏向控制部 86.消隱電極陣列控 8 t纸用中國國家標準（CNS)A〗規恪（210 X 297公釐） 522466 8464pif.doc/006 A7 B7 五 經濟部智慧財產局員工消費合作社印製 發明說明（G) 制部 92.偏向控制部 94.反射電子處理部 96.晶片 臺控制部 100.電子束曝光裝置 102.柵極 104.電 子槍 106.基材 11 〇.電子束形成方法 Π 2·照射變換方法 114.晶片用 投影系統 1 20.個別控制部 1 30.總括控制部 132. 算出部 134.記憶部 136·位置檢出部140·控制系統 150.曝光部 較佳實施例之詳細愈 以下將透過實施例對本發明做詳細的說明’但以下 的實施例並非用來限定與申請專利有關的發明’且在實施 例中所說明之特徵的所有組合並不一定是本發明所必須的 解決方法。 圖1是表與本發明之實施例有關之電子束曝光裝置 100的構造。電子束曝光裝置1〇〇具有以電子束對晶片44 實施所定曝光處理的曝光部150,以及控制曝光部150中 各構造之動作的控制系統140。 曝光部150具有在筐體8內部產生數個電子束，形 成所要求之電子束之斷面形狀的電子束形成方法11〇、對 於各電子束獨立變換，以決定是否將數個電子束照射晶片 44的照射變換方法112、以及調整晶片上所複製之晶體點 3罕:== 向及尺寸的晶片用投影系統114的電子 而曝相15G顚有__晶觀陣曝光之 晶片44的晶片台46與驅動晶片台46 之晶片臺驅動部48 (請先閱讀背面之注意事項再填寫本頁) 訂---------線#. 本紙張尺度適用中國國家標 1規格（210 X 297公坌） 522466 Λ7 B7 ^___ 經濟部智慧財產局員工消費合作社印製 8464pif.doc/006 發明說明（q) 的承載臺系統。曝光部150則具有設在晶片臺46上，以 電子束照射標記部56，檢出從標記部56所放射之2次電 子或反射電子等的電子檢出部40，電子檢出部40則將對 應所檢出之反射電子的量的檢出信號輸往反射電子處理部 94 〇 •電子束成形方法110具有產生數個電子束的電子束 產生部10、讓電子束通過，形成電子束的斷面形狀，具有 數個開口部的第1成形構件14與第2成形構件22、各自 獨立聚焦數個電子束，調整數個電子束焦點的第1多軸電 子透鏡16、使通過第1成形構件的數個電子束獨立偏向的 第1成形偏向部18以及第2成形偏向部20。 電子束產生部10具有數支電子槍104、以及電子槍 所形成的基材106。電子槍104具有產生電子熱的陰極 (cathode)以及包圍陰極12,使陰極12所產生的電子熱安 定的柵極(grid)102，陰極12與柵極102最好使用絕緣體。 在本實施例中，電子束產生部10在基材106上將數支電 子槍104以所定的間隔形成電子槍陣列（array)。Explanation of Jg [type mark ... 8. Case 10. Electron beam generating part 12. Cathode 14. First forming member 16. First multi-axis electron lens 18. First forming deflection part 20. Intellectual property bureau of Ministry of Economic Affairs Employees' cooperative prints the second forming deflection section 22. The second forming member 24 · the second multi-axis electron lens 26 · the blanking electrode array 28 · the electron beam shielding member 34 the third multi-axis electron lens 36 · the fourth multi-axis electron Lens 38 deflection section 40 · electronic detection section 44 · wafer 46. wafer stage 48. wafer stage driving section 52. fifth multi-axis electron lens 56 · marking section 58 · mirror section 6 0. laser interferometer 8 0. electron beam Control section 8 2. Multi-axis electronic lens control section 84. Forming deflection control section 86. Blanking electrode array control 8 t Paper China National Standard (CNS) A Regulations (210 X 297 mm) 522466 8464pif.doc / 006 A7 B7 Printed by the Intellectual Property Bureau of the Ministry of Economy, Employees' Cooperatives, Invention Description (G) Production Department 92. Deflection Control Unit 94. Reflective Electron Processing Unit 96. Wafer Stage Control Unit 100. Electron Beam Exposure Device 102. Gate 104. Electron gun 106. Substrate 11 〇. Electron beam forming method II 2. Irradiation conversion method 114. For wafer Projection system 1 20. Individual control unit 1 30. Overall control unit 132. Calculation unit 134. Memory unit 136 · Position detection unit 140 · Control system 150. Details of the preferred embodiment of the exposure unit will be described below with reference to the embodiments of the present invention A detailed description 'but the following embodiments are not intended to limit inventions related to patent applications' and all combinations of features described in the embodiments are not necessarily the necessary solutions of the present invention. Fig. 1 shows the configuration of an electron beam exposure apparatus 100 related to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on the wafer 44 with an electron beam, and a control system 140 that controls the operation of each structure in the exposure unit 150. The exposure unit 150 has an electron beam forming method 11 that generates a plurality of electron beams inside the housing 8 to form a desired cross-sectional shape of the electron beams. 10. Each electron beam is independently transformed to determine whether to irradiate the wafers with a plurality of electron beams. The irradiation conversion method 44 of 44 and the adjustment of the crystal point 3 on the wafer are not necessary: == the size and size of the wafer are exposed to 15G using the projection system 114 electrons, and the wafer stage of the wafer 44 with the __ crystal view array exposure 46 and the wafer stage driving section 48 of the driving wafer stage 46 (please read the precautions on the back before filling this page) Order --------- line #. This paper size applies to China National Standard 1 specifications (210 X 297 Gong) 522466 Λ7 B7 ^ ___ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 8464pif.doc / 006 Description of the Carrying Platform System (q). The exposure section 150 includes an electron detection section 40 provided on the wafer stage 46 and irradiating the marking section 56 with an electron beam to detect secondary electrons or reflected electrons emitted from the marking section 56. The electronic detection section 40 A detection signal corresponding to the detected amount of reflected electrons is output to the reflected electron processing unit 94. The electron beam forming method 110 includes an electron beam generating unit 10 that generates a plurality of electron beams, and passes the electron beams to form an electron beam. First shape member 14 and second shape member 22 having a plurality of openings, each having a plurality of electron beams independently focused, a first multi-axis electron lens 16 for adjusting the focus of the plurality of electron beams, and passing through the first shape member The first forming deflection portion 18 and the second forming deflection portion 20 are independently deflected by a plurality of electron beams. The electron beam generating unit 10 includes a plurality of electron guns 104 and a base material 106 formed by the electron guns. The electron gun 104 includes a cathode that generates electron heat and a grid 102 that surrounds the cathode 12 and stabilizes the electron heat generated by the cathode 12. The cathode 12 and the grid 102 preferably use an insulator. In this embodiment, the electron beam generating unit 10 forms a plurality of electron guns 104 on the base material 106 at predetermined intervals to form an array of electron guns.
照射變換方法Π2具有獨立聚焦數個電子束，調整 數個電子束焦點的第2多軸電子透鏡24、使數個電子束各 自獨立偏向，以決定是否將各電子束照射在晶片44上， 對各電子束獨立變換的消隱（blanking)電極陣列26、含數 個讓電子束通過的開口部，以消隱電極陣列26遮蔽偏向 之電子束的電子束遮蔽構件28。在其它實施例中，消隱電 極陣列26也可使用消隱(blanking)·小孔（aperture)·陣歹IJ (請先閱讀背面之注意事項再填寫本頁)The irradiation conversion method Π2 has a second multi-axis electron lens 24 that independently focuses a plurality of electron beams, adjusts the focus of the plurality of electron beams, and independently deviates the plurality of electron beams to determine whether to irradiate each electron beam on the wafer 44. A blanking electrode array 26 for each electron beam independent conversion, and an electron beam shielding member 28 including a plurality of openings through which the electron beam passes, so that the blanking electrode array 26 shields the deflected electron beam. In other embodiments, the blanking electrode array 26 can also use blanking · aperture · arrayJIJ (please read the precautions on the back before filling this page)
本紙張尺度適用中國國家標準（CNS)A丨規格（210 X 297公釐） 522466 五、發明說明（没） (array) ·元件（device) 〇 (請先閱讀背面之注意事項再填寫本頁) 晶片用投影系統114具有將數個電子束各自獨立聚 焦，縮小電子束之照射徑的第3多軸電子透鏡34、將數個 電子束各自獨立聚焦，以調整數個電子束焦點的第4多軸 電子透鏡36、將數個電子束獨立偏向在晶片44所要之位 置上的偏向部38、對於晶片44扮演對物透鏡的機能，將 數個電子束各自獨立聚焦的第5多軸電子透鏡52。 控制系統140具有總括控制部130與個別控制部 120。個別控制部120具有電子束控制部80、多軸電子透 鏡控制部82、成形偏向控制部84、消隱電極陣列控制部 86、偏向控制部92、反射電子處理部94與晶片臺控制部 96。總括控制部130具有算出部132、記憶體134與位置 檢出部136。且總括控制部130爲工作站(work station)， 總括控制個別控制部120所包含的各控制部。電子束控制 部控制80控制電子束產生部10。多軸電子透鏡控制部82 則控制供應第1多軸電子透鏡16、第2多軸電子透鏡24、 第3多軸電子透鏡34、第4多軸電子透鏡36、以及第5 多軸電子透鏡52的電流。 經濟部智慧財產局員工消費合作社印製 成形偏向控制部84則控制第1成形偏向控制部18 與第2成形偏向控制部20。消隱電極陣列控制部86控制 對包含在消隱電極陣列26上之偏向電極所施加的電壓。 偏向控制部92則控制包含在偏向部38，對具有數個偏向 器的偏向電極所施加的電壓。反射電子處理部94係根據 從電子檢出部40所輸出的檢出信號檢出反射電子的量， 本紙張尺度適用中國國家標準（CNS)A丨規格（210 x 297公釐） 522466 A7 B7 8464pif.doc/006 五、發明說明（q) 然後通知總括控制部130。晶片臺控制部96是用來控制晶 片臺驅動部48，使晶片臺46往所定的位置移動。 接著說明與本實施例有關之電子束曝光裝置1〇〇的 動作。首先使用設在晶片臺46上的標記部56，進行數個 電子束之照射位置的補正處理。在該補正處理中，算出補 正因伸縮、旋轉、平行移動等電子束曝光裝置1〇〇各構件 的變形等所產生之數個電子束照射位置偏移的補正値。 首先使用檢出照射位置用的所定電子束照射設在晶 片臺46上的標記部56。電子檢出部40則檢出照射在電子 束的反射電子，輸出對應被檢出反射電子之量的檢出信 號。而在總括控制部130中的位置檢出部136則根據電子 檢出部40所輸出的檢出信號，至少檢出1個電子束照射 位置的座標。算出部132則根據被檢出之電子束之照射位 置的座標，算出補正照射位置檢出用之電子束以外之電子 束照射位置的補正値。而記憶體134則儲存根據位置檢出 部136所檢出之電子束的照射位置以及根據算出部132所 檢出之其它電子束的照射位置。 令人滿意的是，該算出部132利用具有數個開口部 的第1成形構件14 、第2成形構件22、第1多軸電子透 鏡16、第2多軸電子透鏡24、第3多軸電子透鏡34、第 4多軸電子透鏡36、第5多軸電子透鏡52、第1成形偏向 部18、第2成形偏向部20、偏向部38等的伸縮、旋轉、 以及平行移動等算出補正電子束之照射位置偏移的補正 値。 1 2 本紙張尺度適用中Θ國家標準（CNS)/\1規烙（2i〇x 297公釐） (請先閱讀背面之注意事項再填寫本頁) -!丨！丨訂！ ！ - 經濟部智慧財產局員工消費合作社印製 522466 Λ7 B7 8464pif.doc/〇〇6 五、發明說明（/(9) 根據以上的動作，算出補正電子束照射位置的補正 値之後，再使用該補正値進行晶片44的曝光處理。以下 將說明在曝光處理中之電子束曝光裝置1〇〇的動作，但在 上述的補正處理中，將電子束照射在標記部44的動作， 與在曝光處理中，將電子束照射在晶片44上的動作略同 也無妨。 電子束產生部產生數個電子束。第1成形構件14 是靠電子束產生部10產生的，讓照射在第1成形構件14 的數個電子束通過設在第1成形構件14上的數個開口部 而成形。在其它的例子中，於電子束產生部1〇所產生的 電子束分割成數個電子束，藉此產生數個電子束。 第1多軸電子透鏡16則將形成矩形的數個電子束獨 立聚焦，在每個電子束獨立調整對第2成形構件22之電 子束的焦點。弟1成形偏向部1 8將在第1成形構件14上 形成矩形的數個電子束照射在第2成形構件上所想要的位 置，且各自獨立偏向。 桌2成形偏向部20將在第1成形偏向部is偏向的 數個電子束，對第2成形構件22各自略往垂直方向偏向， 然後照射在第2成形構件22上。而包含數個具有矩形狀 開口部的第2成形構件22則將照射在第2成形構件22上， 具有矩形斷面的數個電子束，再度在晶片44上形成具有 斷面形狀的電子束。 第2多軸電子透鏡24獨立聚焦數個電子束，對消隱 電極陣列26各自獨立調整電子束的焦點。而讓以第2多 本紙張尺度適用中0國家標準（CNS)A丨規恪（210 x 297公餐） (請先閱讀背面之注意事項再填寫本頁)This paper size applies to Chinese National Standard (CNS) A 丨 Specifications (210 X 297 mm) 522466 V. Description of invention (none) (array) · Device (device) 〇 (Please read the precautions on the back before filling this page) The wafer projection system 114 includes a third multi-axis electron lens 34 which focuses the electron beams independently and reduces the irradiation diameter of the electron beams, and a fourth lens which focuses the electron beams independently to adjust the focus of the electron beams. Axial electron lens 36, a deflection section 38 that independently deviates a plurality of electron beams at a desired position on the wafer 44, a fifth multi-axis electron lens 52 that functions as an objective lens for the wafer 44 and focuses the electron beams independently . The control system 140 includes an overall control unit 130 and an individual control unit 120. The individual control section 120 includes an electron beam control section 80, a multi-axis electron lens control section 82, a forming deflection control section 84, a blanking electrode array control section 86, a deflection control section 92, a reflection electron processing section 94, and a wafer stage control section 96. The collective control unit 130 includes a calculation unit 132, a memory 134, and a position detection unit 136. The collective control unit 130 is a work station and collectively controls each control unit included in the individual control unit 120. The electron beam control section control 80 controls the electron beam generation section 10. The multi-axis electronic lens control unit 82 controls the supply of the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, the fourth multi-axis electronic lens 36, and the fifth multi-axis electronic lens 52. Of current. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, the forming deflection control unit 84 controls the first forming deflection control unit 18 and the second forming deflection control unit 20. The blanking electrode array control unit 86 controls the voltage applied to the bias electrodes included in the blanking electrode array 26. The deflection control section 92 controls the voltage included in the deflection section 38 and applied to a deflection electrode having a plurality of deflectors. The reflected electron processing unit 94 detects the amount of reflected electrons based on the detection signal output from the electronic detection unit 40. This paper size applies the Chinese National Standard (CNS) A 丨 specifications (210 x 297 mm) 522466 A7 B7 8464pif .doc / 006 5. Description of Invention (q) Then notify the collective control unit 130. The wafer stage control unit 96 controls the wafer stage driving unit 48 to move the wafer stage 46 to a predetermined position. Next, the operation of the electron beam exposure apparatus 100 according to this embodiment will be described. First, the marking portion 56 provided on the wafer stage 46 is used to correct the irradiation positions of several electron beams. In this correction process, correction corrections are made to correct the displacement of several electron beam irradiation positions caused by deformation of each member of the electron beam exposure apparatus 1000, such as telescopic, rotational, and parallel movement. First, a predetermined electron beam for detecting the irradiation position is irradiated with a marking portion 56 provided on the wafer stage 46. The electron detection unit 40 detects the reflected electrons irradiated on the electron beam, and outputs a detection signal corresponding to the amount of the detected reflected electrons. The position detection unit 136 in the collective control unit 130 detects at least one coordinate of the irradiation position of the electron beam based on the detection signal output from the electronic detection unit 40. The calculation unit 132 calculates a correction value for the irradiation position of the electron beam other than the electron beam for detecting the irradiation position based on the coordinates of the detected irradiation position of the electron beam. The memory 134 stores the irradiation positions of the electron beams detected by the position detection unit 136 and the irradiation positions of other electron beams detected by the calculation unit 132. The calculation unit 132 satisfactorily uses the first forming member 14, the second forming member 22, the first multi-axis electron lens 16, the second multi-axis electron lens 24, and the third multi-axis electron having a plurality of openings. The lens 34, the fourth multi-axis electronic lens 36, the fifth multi-axis electronic lens 52, the extension, rotation, and parallel movement of the first forming deflection portion 18, the second forming deflection portion 20, and the deflection portion 38, etc. The correction of the deviation of the irradiation position. 1 2 This paper size is applicable to Θ National Standard (CNS) / \ 1 gauge (2i〇x 297 mm) (Please read the precautions on the back before filling this page)-! 丨!丨 Order! !! -Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 522466 Λ7 B7 8464pif.doc / 〇〇6 V. Description of the invention (/ (9) Based on the above operations, calculate the correction 値 for correcting the irradiation position of the electron beam, and then use the correction値 The exposure process of the wafer 44 is performed. The operation of the electron beam exposure apparatus 100 during the exposure process will be described below. However, in the above-mentioned correction process, the operation of irradiating the electron beam on the marking portion 44 and the exposure process are performed. The operation of irradiating the electron beam on the wafer 44 is slightly the same. The electron beam generating section generates a plurality of electron beams. The first forming member 14 is generated by the electron beam generating section 10, and is irradiated on the first forming member 14. The plurality of electron beams are formed through a plurality of openings provided in the first forming member 14. In other examples, the electron beam generated by the electron beam generating unit 10 is divided into a plurality of electron beams, thereby generating a plurality of electron beams. Electron beam. The first multi-axis electron lens 16 focuses the electron beams forming a rectangle independently, and adjusts the focus of the electron beam on the second forming member 22 independently at each electron beam. 8 Irradiate several electron beams forming a rectangle on the first forming member 14 at desired positions on the second forming member, and deflect them independently. Table 2 forming deflection section 20 will deviate at the first forming deflection section is. A plurality of electron beams are deflected slightly perpendicularly to the second forming member 22, and are then irradiated on the second forming member 22. The second forming member 22 including a plurality of rectangular openings is irradiated on the second forming member. A plurality of electron beams having a rectangular cross section are formed on the member 22, and an electron beam having a cross section shape is again formed on the wafer 44. The second multi-axis electron lens 24 independently focuses the plurality of electron beams, and the blanking electrode array 26 is independent of each other. Adjust the focus of the electron beam. Let the 2nd paper size apply the Chinese National Standard (CNS) A 丨 regulations (210 x 297 meals) (Please read the precautions on the back before filling this page)
經濟部智慧財產局員工消費合作社印製 經濟部中央標準局員工消費合作社印製 522466 8464pif.doc/006 A7 B7 五、發明説明（//) 軸電子透鏡24各自調整焦點的數個電子束通過位於消隱 電極陣列26的數個小孔。 消隱電極陣列控制部86是用來控制是否對設在消隱 電極陣列26各小孔附近的偏向電極施與電壓，消隱電極 陣列26則根據施加在偏向電極的電壓切換是否讓電子束 照射在晶片44上。 透過消隱電極陣列26而沒偏向的電子束會通過第3 多軸電子透鏡34。且第3多軸電子透鏡34會將通過第3 多軸電子透鏡34的電子束的電子徑縮小，被縮小的電子 束則通過位於電子束遮蔽構件28上的開口部。電子束遮 蔽構件2'8則藉由消隱電極陣列26遮蔽偏向的電子束。通 過電子束遮蔽構件28的電子束則射入第4多軸電子透鏡 36。第4多軸電子透鏡36則各自獨立聚焦所射入的電子 束，以第4多軸電子透鏡36調整焦點的電子束則射入偏 向部38。 偏向控制部92則根據算出部132所算出的補正値來 控制位於偏向部38的數個偏向器，將射入偏向部38的各 電子束獨立偏向應照射在晶片44上的位置。第5多軸電 子透鏡52則用來調整通過第5多軸電子透鏡52之各電子 束對晶片44的焦點。而應照射在晶片上，具有斷面形狀 的各電子束則照射在想要照射的晶片位置上。 在曝光處理中，晶片臺驅動部48最好根據來自晶片 臺控制部96的指示，使晶片臺46往一定的方向連續移動， 然後配合晶片的移動，將電子束的斷面形狀，在晶片上形 本紙張尺度適用中國國家標隼（CNS〉A4規格（210X 297公竣） 83. 3. 10,000 ----------- (請先閲讀背面之注意事項再填寫本頁) -訂 522466 8464pif .doc/006 A7 B7 經濟部中央標準局員工消費合作社印裝 五、發明説明（/2) 成應照射的形狀，以決定讓應照射在晶片44上之電子束 通過的小孔，然後再根據偏向部38使各電子束對晶片偏 向應照射的位置，如此就可以在晶片上對所想要的晶體點 陣（pattern)進行曝光。 圖2是與本實施例有關之電子束曝光裝置1〇〇的動 作流程全圖。在S10開始本流程，在晶片臺位置校正階段 (S20)f父正设有標sfi部56之晶片臺46的位置。在照射位置 構成階段（S30)將所有電子束照射在標記部56，以檢出所 有電子束的照射位置，對各電子束的照射位置進行校正。 在曝光處理階段（S40)，根據在晶片臺位置校正階段（S20) 與照射位置校正階段（S30)所決定的校正値來進行所定次數 的曝光處理。在S50判斷要求次數的曝光處理是否已結束 了。在S50判斷出要求次數的曝光處理尙未結束時，則在 照射位置補正階段（S60)檢出所定之電子束的照射位置，對 曝光處理中所使用之電子束的照射位置進行補正。使用在 晶片臺位置校正階段（S20)與照射位置校正階段（S30)所決 定的校正値，將檢出用的電子束照射在標記部56，藉此算 出補正數個電子束照射位置之偏移的補正値。然後在曝光 處理階段（S40)根據在照射位置補正階段（S6())所算出的補 正値進行所定的曝光處理。在S50判斷出要求次數的曝光 處理已結束的場合，則在S70結束本流程。經由照射位置 補正階段（S60)來補正電子束的照射位置時，最好是以批或 片爲單位來進行。 圖3表在照射位置補正階段（S60)，電子束曝光裝置1〇〇 裝 訂 C請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家榡準（CNS ) Α4規格（210Χ 297公釐） 83. 3. 10,000 經濟部中央標準局員工消費合作社印製 522466 8464pif.doc/006 A 7 B7Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 522466 8464pif.doc / 006 A7 B7 V. Description of the Invention (//) The electron beams of the axis electronic lens 24 each adjust the focus through several electron beams located at Several holes of the electrode array 26 are blanked. The blanking electrode array control unit 86 is used to control whether a voltage is applied to the deflection electrodes provided near the small holes of the blanking electrode array 26. The blanking electrode array 26 switches whether or not the electron beam is irradiated according to the voltage applied to the deflection electrodes. On wafer 44. The unbiased electron beams passing through the blanking electrode array 26 pass through the third multi-axis electron lens 34. The third multi-axis electron lens 34 reduces the electron diameter of the electron beam passing through the third multi-axis electron lens 34, and the reduced electron beam passes through an opening located on the electron beam shielding member 28. The electron beam shielding member 2'8 shields the deflected electron beam by the blanking electrode array 26. The electron beam passing through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. The fourth multi-axis electron lens 36 independently focuses the incident electron beams, and the electron beam whose focus is adjusted by the fourth multi-axis electron lens 36 enters the deflection unit 38. The deflection control unit 92 controls a plurality of deflectors located in the deflection unit 38 based on the correction chirp calculated by the calculation unit 132, and independently deviates each electron beam incident on the deflection unit 38 to a position to be irradiated on the wafer 44. The fifth multi-axis electron lens 52 is used to adjust the focus of each electron beam passing through the fifth multi-axis electron lens 52 on the wafer 44. Instead, the wafer should be irradiated, and each electron beam having a cross-sectional shape should be irradiated on the position of the wafer to be irradiated. In the exposure process, the wafer stage driving unit 48 preferably moves the wafer stage 46 continuously in a certain direction according to an instruction from the wafer stage control unit 96, and then cooperates with the movement of the wafer to form the cross-sectional shape of the electron beam on the wafer. The size of the paper is applicable to Chinese national standard (CNS> A4 specification (210X 297)) 83. 3. 10,000 ----------- (Please read the precautions on the back before filling this page)- Order 522466 8464pif .doc / 006 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (/ 2) The shape should be irradiated to determine the small hole through which the electron beam that should be irradiated on the wafer 44 passes. Then, according to the deflection section 38, each electron beam is deflected to the position where the wafer should be irradiated, so that a desired crystal pattern can be exposed on the wafer. Fig. 2 is an electron beam exposure related to this embodiment. The full diagram of the operation flow of the device 100 is started at S10. In the wafer stage position correction stage (S20), the position of the wafer stage 46 marked with the sfi section 56 is being set. In the irradiation position formation stage (S30), All electron beams are irradiated on the marking portion 56 In order to detect the irradiation positions of all the electron beams, the irradiation positions of the respective electron beams are corrected. In the exposure processing stage (S40), the correction is determined based on the wafer stage position correction stage (S20) and the irradiation position correction stage (S30).値 to perform a predetermined number of exposure processes. At S50, it is determined whether the required number of exposure processes has ended. At S50, it is determined that the required number of exposure processes has not been completed. Then, the predetermined electrons are detected at the irradiation position correction stage (S60). The irradiation position of the beam is used to correct the irradiation position of the electron beam used in the exposure process. Using the correction beams determined in the wafer stage position correction stage (S20) and the irradiation position correction stage (S30), the detected electrons are detected. The beam is irradiated on the marking unit 56 to calculate a correction frame for correcting the offset of the irradiation positions of a plurality of electron beams. Then, in the exposure processing stage (S40), the determination is performed based on the correction frame calculated in the irradiation position correction stage (S6 ()). If it is determined in S50 that the required number of exposure processes have been completed, then the process ends in S70. The correction step is performed via the irradiation position. (S60) When correcting the irradiation position of the electron beam, it is best to do it in batches or slices. Figure 3 is the irradiation position correction stage (S60). The electron beam exposure device 100 binding C, please read the back Note: Please fill in this page again.) This paper size is applicable to China National Standards (CNS) Α4 size (210 × 297 mm) 83. 3. 10,000 Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 522466 8464pif.doc / 006 A 7 B7
五、發明说明（I 的動作流程圖。在照射位置檢出階段（S80)中，以曝光處理 中數個電子束當中所定的電子束一檢出用的電子束照射標 記部56，然後檢出該檢出用電子束之照射位置的座標。在 照射位置儲存階段（S90)將所檢出之照射位置的座標儲存在 總括控制部130的記憶體134內。在S100判斷必要之電 子束照射位置的座標是否已被檢出。在S100判斷出必要 之電子束照射位置的座標未被檢出時，則回到照射位置檢 出階段（S80)，檢出其它檢出用電子束照射位置的座標，然 後在照射位置儲存階段（S90)儲存被檢出之照射位置的座 標。在S100判斷出必要之電子束照射位置的座標已被檢 出時，則在補正値算出階段（SU0)根據所檢出的座標，算 出補正檢出用之電子束以外之電子束照射位置的補正値。 在本實施例中，總括控制部130的記憶體134儲存著各電 子束照射位置的位置關係，也可在補正値算出階段（sno) 使用儲存在記憶體中的該位置關係，算出補正其它電子束 照射位置的補正値。 電子束曝光裝置100具有數個開口部之構件的變形有 全體均等伸縮、旋轉、平行移動、非線形伸縮、對正交兩 方向的伸縮等，在總括控制部130最好按照應考慮的變形 組合來決定檢出電子束照射位置的座標數。具體而言’在 照射位置檢出階段（S80)有1個電子束之照射位置的座標。 例如在曝光處理中，設在使晶片臺連續移動的方向爲x方 向，與X方向略爲垂直的方向爲y方向的xy系座標中， 檢出對基準點之照射位置的X座標或y座標’在補正値算 本紙張尺度適用中國國家標準（CNS ) A4規格（210Χ：Ζ97公釐） 83. 3. 10,000 ---------tr41^ (請先閲讀背面之注意事項再填寫本頁) 522466 i464pif.doc/006 A7 B7 經濟部中央標準局貝工消費合作社印製 .五、發明説明（/^ 出階段（S110)，也可根據所檢出的座標，藉著電子束曝光 裝置100具有數個開口部之構件的全體均等伸縮及旋轉的 一方，算出補正照射位置的1個座標被檢出之電子束以外 之電子束照射位置偏移的補正値。 並在照射位置檢出階段（S80)檢出1個電子束的照射位 置，例如在上述的xy座標系中檢出X座標及y座標，在 補正値算出階段（S110)中也可根據所檢出的座標，利用電 子束曝光裝置100具有數個開口部之構件的全體均等伸縮 與旋轉，算出補正照射位置被檢出之電子束以外之電子束 照射位置偏移的補正値。 並在照射位置檢出階段（S80)檢出1個電子束的照射位 置，在補正値算出階段（S110)也可根據所檢出的照射位置， 利用電子束曝汪裝置100具有數個開口部之構件的平行移 動算出補正照射位置被檢出之電子束以外之電子束照射位 置偏移的補正値。 並在照射位置檢出階段（S80)檢出2個電子束的照射位 置，也可在補正値算出階段（S110)根據2個電子束的照射 位置，利用電子束曝光裝置1〇〇具有數個開口部之構件的 全體均等伸縮、旋轉、以及平行移動，算出補正2個電子 束以外之電子束照射位置偏移的補正値。 在照射位置檢出階段（S80)檢出3個電子束的照射位 置，也可在補正値算出階段（S110)根據3個電子束的照射 位置，利用電子束曝光裝置1〇〇具有數個開口部之構件的 全體均等伸縮、旋轉、平行移動以及對正交2個方向的伸 ----------- (請先閱讀背面之注意事項再填寫本頁) 訂 秦 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） 83. 3. 10,000 經濟部中央標準局員工消費合作社印製 522466 8464pif.doc/006 A7 B7 五、發明説明（丨V) 縮算出補正3個電子束以外之電子束照射位置偏移的補正 値。 在照射位置檢出階段（S80)檢出至少4個電子束的照射 位置，也可在補正値算出階段（S110)根據至少4個電子束 的照射位置，利用電子束曝光裝置1〇〇具有數個開口部之 構件的旋轉、平行移動、非線性伸縮以及對正交2個方向 的伸縮算出補正至少4個電子束以外之電子束照射位置偏 移的補正値。 最好在照射位置校正階段（S30)之後的第1次照射位置 補正階段（S60)的總括控制部130，根據在載物臺位置校正 階段（S20)及照射位置校正階段（S30)所決定的校正値，利 用照射檢出用的電子束檢出照射位置，算出補正値。或在 照射位置校正階段（S30)之後第數次一所定次數之照射位置 補正階段（S60)的總括控制部130，根據在該所定次數之上 一次照射位置補正階段（S60)所算出的補正値，利用照射檢 出用的電子束檢出照射位置，算出補正値。 最好在第數次一所定次數之照射位置補正階段（S60)的 總括控制部130,再度檢出與在該所定次之上一次照射位 置檢出階段（S80)檢出照射位置的電子束一樣的電子束照射 位置的座標，在補正値算出階段（S110)根據在該所定次之 上一次照射位置檢出階段（S80)所檢出的座標與在該所定次 之照射位置檢出階段（S80)所檢出的座標，再度算出補正 値。這時從總括控制部130的記憶體134抽出在該所定次 之L:-次的照射位置檢出階段（S80)所檢出的座標。 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） 83. 3. 10,000 ------、tr--*--- (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 522466 8464pif.doc/006 A7 B7 五、發明説明（Μ) 而且檢出數個檢出用電子束之照射位置的場合’最好 使用相同的標記部56檢出數個電子束的照射位置。藉著 使用相同的標記部56檢出電子束的照射位置，可根據各 標記部56間的特性降低補正値的誤差。 圖4表電子槍104的排列例與晶片臺46之一例。圖4(a) 表配置69個電子槍104的基材106。如圖4(b)所示，晶片 臺46具有標記部56及鏡（mirror)部58。而電子束曝光裝 設1〇〇在晶片臺46的外部還具有激光千涉儀（laser interferometer)60，使用鏡部58與激光干涉儀60來校正晶 片臺46的位置。接著將使用圖4(a)及圖4(b)來說明在圖2 的載物臺校正階段（S20)有關校正晶片臺位置的動作。激光 干涉儀60對設在晶片臺46的鏡部58照射數個激光，然 後接收該激光的反射光，根據照射的激光與反射光的光程 (optical path)差檢出晶片臺46的位置及傾斜、鏡部58的 傾斜及彎曲等的參數。總括控制部130則根據該參數算出 校正晶片臺58之載物臺位置的校正値，然後使用該校正 値使晶片臺46移動至要求的位置。在曝光處理中，設使 晶片臺連續移動的方向爲X方向，與X方向略呈垂直的方 向爲y方向。 圖5表在照射位置檢出階段（S80)中，電子束之照射 位置檢出方法之一例。在本例中說明有關檢出3個電子束 的照射位置，算出該3個電子束以外之電子束照射位置的 場合。如圖5(a)、圖5(b)、圖5(c)所示，使用相同的標記 部檢出3個電子束的照射位置。使用相同的標記部56檢 19 本紙張尺度適用中國國家榡準（CNS ) A4現格（210X297公釐） 83. 3. 10,000 ---------9 裝------訂----- (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 522466 84 64pif.doc/006 A7 B7 五、發明説明（/ q) 出數個電子束的照射位置，可更精確地測定數個電子束間 的相對位置。而且在其它的例子當中，也可使用數個標記 部檢出數個電子束的照射位置，也可使用設在照設位置檢 出用晶片上的標記，檢出電子束的照射位置。 接著根據檢出用電子束的照射位置，說明有關算出 檢出用電子束以外之電子束照射位置的方法。利用第J 成形構件14、第2成形構件22、第1多軸電子透鏡16、 第2多軸電子透鏡24、第3多軸電子透鏡34、第4多軸 電子透鏡36、第5多軸電子透鏡52、第1成形偏向部18、 第2成形偏向部20、偏向部38等的伸縮、旋轉及平行移 動，將：Γ個電束之照射位置的變動量Δνχ、Z\Vy設定爲： Δ Vx Cx+rx·^ Cy+ox... (1) △ Vy 二gy ※ Cy+ry ※ Cx+ox·.· (2) △ Vx、z\Vy爲該電子束應照射的位置與被檢出之電子束 之照射位置的變位。Cx、Cy爲數個電子槍1〇4的相對座 標、爲已知的値。而gx、gy爲未知的伸縮係數，rx、ry 爲未知的旋轉係數，ox、oy爲未知的平行移動係數。在本 實施例中，數個電子束各自獨立所產生之電子束照射位竃 的偏移，比變動量Δνχ、AVy小，因此總括控制部i3〇 的算出部U2會根據式（1)及式（2)算出補正電子束照射位 置的補正値。因此根據檢出3個電子束的照射位置求取6 個未知數的値，可算出該3個電子束以外之數個電子束的 照射位置，而且根據所算出之數個電子束的照射位置也可 算出補正各電子束之照射位置的補正値。 20 ---------0^------訂------0 Γ請先閲讀背面之注意事項再填寫本耳) 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 3. !〇,〇〇〇 522466 A7 B7 8464pif.doc/〇〇6 五、發明説明（/f) 不考慮具有數個開口部之構件的平行移動的場合， 式（1)及式（2)就變成 A Vx 二茗乂※ Cx+rx《Cy... (3) Δ Vy =gy Cy+ry Cx... (4) 檢出2個電子束的照射位置，求取4個未知數的値，就可 算出該2個電子束以外之數個電子束的照射位置。且藉著 檢出2個電子束的照射位置，利用伸縮及旋轉也可算出之 電子束之照射位置偏移的補正値。而且藉著檢出1個電子 束的照射位置，利用伸縮、旋轉及平行移動中的任何一項 皆可算出補正電子束之照射位置偏移的補正値。 若根據本實施例的電子束補正方法與電子束曝光裝 置100，藉著檢出少數之電子束的照射位置，可算出許多 電子束的照射位置。因此，即使沒檢出很多電子束的照射 位置，也可在短時間內算出補正很多電子束之照射位置的 補正値。 雖然本發明已以一較佳實施例揭露如上，但其並非 用以限定本發明，任何熟習此項技藝者，在不脫離本發明 之精神和範圍內，當可作些許之更動與潤飾，因此本發明 之保護範圍當視後附之申請專利範圍所界定者爲準。 運用在產業上的可行性 由以上的說明可知，根據本發明的話，藉著檢出所 定電子束的照射位置，可提供補正該電子束以外之電子束 之照射位置的電子束補正方法與電子束曝光裝置。 本紙張尺度適用中國國家標準（CNS〉A4说格（210X297公釐） — — ———— 111111 訂 11111 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 83. 3. 10,000V. Description of the operation flow of the invention (I). In the irradiation position detection stage (S80), the marking portion 56 is irradiated with an electron beam for detection, which is a predetermined electron beam among a plurality of electron beams in the exposure process, and is then detected. The coordinates of the irradiation position of the detection electron beam. In the irradiation position storage stage (S90), the coordinates of the detected irradiation position are stored in the memory 134 of the collective control unit 130. The necessary electron beam irradiation position is determined in S100. Whether the coordinates of the detected electron beam have been detected. When it is determined in S100 that the necessary coordinates of the electron beam irradiation position are not detected, the process returns to the irradiation position detection stage (S80), and the coordinates of other detection electron beam irradiation positions are detected. Then, the coordinates of the detected irradiation position are stored in the irradiation position storage stage (S90). When it is determined that the coordinates of the necessary electron beam irradiation position have been detected in S100, the correction unit calculation stage (SU0) is based on the detected The calculated coordinates are used to calculate the correction position of the electron beam irradiation position other than the electron beam used for detection. In this embodiment, the memory 134 of the collective control unit 130 stores each electron beam irradiation position. The positional relationship of the electron beam exposure device 100 can also be used to calculate the corrections of other electron beam irradiation positions using the positional relationship stored in the memory at the correction stage calculation stage (sno). The electron beam exposure device 100 has a plurality of openings. There are overall equal extension, rotation, parallel movement, non-linear extension and contraction, orthogonal extension and contraction, etc. The overall control unit 130 preferably determines the number of coordinates of the detection position of the electron beam irradiation according to the combination of deformations to be considered. Specifically, 'In the irradiation position detection stage (S80), there are coordinates of the irradiation position of an electron beam. For example, in the exposure process, the direction in which the wafer stage is continuously moved is the x direction, and the direction slightly perpendicular to the X direction is y. Among the xy coordinates in the direction, the X-coordinate or y-coordinate of the irradiation position to the reference point is detected. The paper size of the correction calculation paper applies the Chinese National Standard (CNS) A4 specification (210 ×: Z97 mm) 83. 3. 10,000 --------- tr41 ^ (Please read the notes on the back before filling out this page) 522466 i464pif.doc / 006 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. (/ ^ In the output stage (S110), one coordinate of the correction irradiation position can be calculated based on the detected coordinates by using the uniform expansion and contraction of the entire member of the electron beam exposure apparatus 100 having several openings. The correction position of the irradiation position deviation of the electron beam other than the detected electron beam is corrected. At the irradiation position detection stage (S80), the irradiation position of one electron beam is detected, for example, the X coordinate and the X coordinate are detected in the above xy coordinate system. The y-coordinate can also be used to calculate the electrons detected at the correction irradiation position based on the detected coordinates by using the entire beam of the electron beam exposure device 100 having a plurality of openings to expand and rotate uniformly. Correction for the deviation of the irradiation position of the electron beam other than the beam. An irradiation position of one electron beam is detected in the irradiation position detection stage (S80), and in the correction calculation stage (S110), the electron beam exposure apparatus 100 may have several openings based on the detected irradiation position. The parallel movement of the members calculates a correction frame for correcting the deviation of the irradiation position of the electron beam other than the detected electron beam. At the irradiation position detection stage (S80), two irradiation positions of the electron beams are detected, and at the correction stage calculation stage (S110), the irradiation positions of the two electron beams can be used by the electron beam exposure apparatus 100 to have several The entire opening and closing members are uniformly expanded, contracted, rotated, and moved in parallel to calculate a correction frame for correcting an offset of an electron beam irradiation position other than the two electron beams. The irradiation positions of the three electron beams are detected in the irradiation position detection stage (S80), and it is also possible to use the electron beam exposure apparatus 100 to have several openings based on the irradiation positions of the three electron beams in the correction calculation stage (S110). All the components of the unit are equally stretched, rotated, moved in parallel and stretched in two orthogonal directions ----------- (Please read the precautions on the back before filling this page) Applicable to China National Standard (CNS) A4 specification (210X29? Mm) 83. 3. 10,000 Printed by the Employees' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 522466 8464pif.doc / 006 A7 B7 V. Explanation of the invention (丨 V) Reduction of correction 3 The correction of the deviation of the irradiation position of the electron beam other than the electron beams. In the irradiation position detection stage (S80), at least four electron beam irradiation positions are detected, and in the correction correction calculation stage (S110), the electron beam exposure apparatus 100 has a number based on the irradiation positions of at least four electron beams. Rotation, parallel movement, non-linear expansion and contraction of the members of each opening, and correction of the displacement of electron beam irradiation positions other than at least 4 electron beams are calculated for the expansion and contraction in two orthogonal directions. Preferably, the overall control unit 130 in the first irradiation position correction stage (S60) after the irradiation position correction stage (S30) is determined based on the determination in the stage position correction stage (S20) and the irradiation position correction stage (S30). The chirp is corrected, and the irradiation position is detected by an electron beam for irradiation detection, and the corrected chirp is calculated. Or, the overall control unit 130 of the irradiation position correction stage (S60) for a predetermined number of times after the irradiation position correction stage (S30), based on the correction calculated by the irradiation position correction stage (S60) one time above the predetermined number. Then, an irradiation position is detected by an electron beam for irradiation detection, and a correction frame is calculated. It is preferable that the collective control unit 130 in the irradiation position correction stage (S60) of the predetermined number of times is the same as the electron beam detected by the irradiation position in the irradiation position detection stage (S80) above the predetermined time. The coordinates of the irradiation position of the electron beam in the correction stage (S110) are based on the coordinates detected in the irradiation position detection stage (S80) above the predetermined number and the detection position in the irradiation position (S80) ) The coordinates detected are calculated again. At this time, the coordinates detected at the L: -th irradiation position detection stage (S80) of the predetermined order are extracted from the memory 134 of the collective control section 130. This paper size applies to China National Standard (CNS) A4 (210X297mm) 83. 3. 10,000 ------, tr-* --- (Please read the precautions on the back before filling this page) Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 522466 8464pif.doc / 006 A7 B7 V. Description of the invention (M) When several irradiation positions of the detection electron beam are detected, it is best to use the same marking section 56 The irradiation positions of several electron beams are obtained. By detecting the irradiation position of the electron beam using the same marking portion 56, it is possible to reduce the error of the correction frame according to the characteristics between the marking portions 56. FIG. 4 shows an example of the arrangement of the electron guns 104 and an example of the wafer stage 46. FIG. 4 (a) shows a substrate 106 on which 69 electron guns 104 are arranged. As shown in FIG. 4 (b), the wafer stage 46 includes a marking portion 56 and a mirror portion 58. The electron beam exposure device 100 also has a laser interferometer 60 on the outside of the wafer stage 46. The position of the wafer stage 46 is corrected using the mirror 58 and the laser interferometer 60. 4 (a) and 4 (b) will be used to explain the operation of correcting the position of the wafer stage in the stage correction stage (S20) of FIG. 2. The laser interferometer 60 irradiates a plurality of laser beams to the mirror portion 58 provided on the wafer stage 46, and then receives the reflected light of the laser beam. The position and the position of the wafer stage 46 are detected based on the optical path difference between the irradiated laser light and the reflected light. Parameters such as inclination, inclination and bending of the mirror portion 58. The overall control unit 130 calculates a correction angle 校正 of the stage position of the correction wafer stage 58 based on the parameter, and then uses the correction angle 校正 to move the wafer stage 46 to a desired position. In the exposure process, the direction in which the wafer stage is continuously moved is the X direction, and the direction slightly perpendicular to the X direction is the y direction. Fig. 5 shows an example of a method for detecting the irradiation position of the electron beam in the irradiation position detection stage (S80). In this example, the case where the irradiation positions of three electron beams are detected and the irradiation positions of electron beams other than the three electron beams are calculated. As shown in Figs. 5 (a), 5 (b), and 5 (c), the irradiation positions of three electron beams were detected using the same marking portion. Use the same marking section 56 check 19 This paper size is applicable to China National Standard (CNS) A4 format (210X297 mm) 83. 3. 10,000 --------- 9 Packing ------ Order ----- (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 522466 84 64pif.doc / 006 A7 B7 V. Description of the Invention (/ q) Several electron beams The relative position of several electron beams can be measured more accurately. Further, in other examples, the irradiation positions of the electron beams may be detected by using a plurality of marking portions, or the irradiation positions of the electron beams may be detected by using a mark provided on the wafer for detecting the placement position. Next, a method for calculating an irradiation position of an electron beam other than the detection electron beam will be described based on the irradiation position of the detection electron beam. Using the J-th molded member 14, the second molded member 22, the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, the fourth multi-axis electronic lens 36, and the fifth multi-axis electron The extension, rotation, and parallel movement of the lens 52, the first forming deflection portion 18, the second forming deflection portion 20, the deflection portion 38, and the like, set: the fluctuation amounts Δνχ, Z \ Vy of the irradiation positions of the Γ beams as: Δ Vx Cx + rx · ^ Cy + ox ... (1) △ Vy two gy ※ Cy + ry ※ Cx + ox ··· (2) △ Vx, z \ Vy are the position and inspection of the electron beam Displacement of the irradiation position of the outgoing electron beam. Cx and Cy are relative coordinates of several electron guns 104, and are known as tritium. And gx and gy are unknown expansion coefficients, rx and ry are unknown rotation coefficients, and ox and oy are unknown parallel movement coefficients. In this embodiment, the offsets of the irradiation positions of the electron beams generated by the plurality of electron beams independently are smaller than the fluctuation amounts Δνχ and AVy. Therefore, the calculation unit U2 of the overall control unit i3〇 will be based on equation (1) and (2) Calculate a correction frame for correcting the irradiation position of the electron beam. Therefore, by determining the irradiation positions of the three electron beams, 6 unknowns of plutonium can be obtained, and the irradiation positions of several electron beams other than the three electron beams can be calculated, and the calculated irradiation positions of the several electron beams can also be calculated. Calculate a correction frame to correct the irradiation position of each electron beam. 20 --------- 0 ^ ------ Order ------ 0 Γ Please read the notes on the back before filling in this ear) This paper size applies to China National Standard (CNS) A4 Specifications (210 X 297 mm) 3.! 〇〇〇〇〇522466 A7 B7 8464pif.doc / 〇〇6 V. Description of the invention (/ f) When parallel movement of a member with several openings is not considered, (1) and expression (2) becomes A Vx. 茗 乂 Cx + rx 《Cy ... (3) Δ Vy = gy Cy + ry Cx ... (4) Detection of two electron beam irradiation positions By obtaining 4 unknowns of 値, the irradiation positions of several electron beams other than the two electron beams can be calculated. In addition, by detecting the irradiation positions of the two electron beams, the correction position of the irradiation position deviations of the electron beams which can also be calculated by stretching and rotating can be calculated. Furthermore, by detecting the irradiation position of one electron beam, a correction frame for correcting the deviation of the irradiation position of the electron beam can be calculated by using any of telescopic, rotational, and parallel movements. According to the electron beam correction method and the electron beam exposure apparatus 100 of this embodiment, by detecting the irradiation positions of a few electron beams, the irradiation positions of many electron beams can be calculated. Therefore, even if the irradiation positions of many electron beams are not detected, the correction frame for correcting the irradiation positions of many electron beams can be calculated in a short time. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and decorations without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application. The feasibility of application in the industry can be seen from the above description. According to the present invention, by detecting a predetermined irradiation position of an electron beam, an electron beam correction method and an electron beam for correcting an irradiation position of an electron beam other than the electron beam can be provided. Exposure device. This paper size applies to Chinese national standards (CNS> A4 scale (210X297 mm) — — — — — 111111 Order 11111 (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 83. 3. 10,000