CN105575789A - Method for patterning thin film - Google Patents
Method for patterning thin film Download PDFInfo
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- CN105575789A CN105575789A CN201510981630.6A CN201510981630A CN105575789A CN 105575789 A CN105575789 A CN 105575789A CN 201510981630 A CN201510981630 A CN 201510981630A CN 105575789 A CN105575789 A CN 105575789A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Abstract
The invention discloses a method for patterning a thin film. The method comprises the following steps of coating a substrate with photoresist, and processing the photoresist by using an etching method to acquire photoresist with a pattern shape, wherein the pattern shape of the photoresist is opposite to a target pattern shape; depositing a thin film material to be patterned on the substrate coated with the photoresist, wherein the deposited thin film material is arranged at positions where the photoresist is coated on the substrate and positions without the photoresist; grinding the thin film material on the substrate by using a grinding method until no thin film material is attached onto the photoresist and the height of the thin film material is flush with the height of the photoresist, and stopping the grinding operation; and processing the photoresist on the substrate by using the etching method after the grinding operation is completed, and acquiring the thin film material with the target pattern shape on the substrate. By the method, the problem that the thin film cannot be patterned due to permeation of the photoresist into the thin film to be patterned can be solved.
Description
Technical field
The present invention relates to thin film technique field, particularly relate to a kind of Film patterning method.
Background technology
In thin film technique field, sometimes film can be carried out graphically as required, such as, in Organic Light Emitting Diode (OLED), luminescent layer can be made optical grating construction, object is the utilance etc. increasing light; The preparation method of grid, source electrode and drain electrode is by making given shape to realize by associated film in the thin-film transistor (TFT), and the metal electrode in thin-film transistor is also by metal thin-film pattern is reached optionally function of supplying power, such as, when preparing LCDs, wherein a part of screen does not need luminescence, namely transistor is not needed to provide voltage, the electrode of the transistor at this moment prepared can walk around this part, namely the electrode shape prepared can not be monoblock, but can prepare various shape as required.
At present, photoetching technique be user the most often use by Film patterning method, its general step: first smear photoresist on film to be patterned, then adopt the technology such as exposure or etching photoresist to be made corresponding mask plate, finally utilize mask plate by the method for etching, film to be made the shape of user's needs.
Adopt above-mentioned photoetching technique by time Film patterning, normally photoresist is spread upon the enterprising line correlation operation of thin-film material to be patterned, but photoresist may penetrate in this thin-film material, affects the performance of film.In addition, film can adopt special construction sometimes, and such as, the electrode in Organic Light Emitting Diode (OLED) or thin-film transistor (TFT) etc. can adopt nanoparticle structure, such as Metal Ball, triangles of metal or metal nanometer line.If when at this moment adopting above-mentioned photoetching method photoresist to be spread upon the film of these special constructions, because the space in this film is larger, photoresist is more prone to infiltration and enters, when making this film figureization, due to the existence of photoresist, cause the shape that cannot user be become to need this film preparation.Such as, what the electrode in thin-film transistor adopted is nano silver wire film, when at this moment smearing photoresist on the thin film, owing to there is gap between nano wire, photoresist may permeate in these gaps, cause the shape this film cannot being made user's needs, and the conductivity of electrode can be affected.
Summary of the invention
In view of the above problems, the embodiment of the present invention provides a kind of Film patterning method, when adopting photoetching technique to be undertaken graphical by film for solving photoresist enter that film causes cannot by Film patterning problem.
A Film patterning method, the method comprises:
Substrate smears photoresist, and adopts the method for etching to process described photoresist, obtain the photoresist having graphics shape, the graphics shape of described photoresist is contrary with targeted graphical shape; At the thin-film material that the described deposited on substrates scribbling photoresist is to be patterned, the thin-film material distribution of described deposition scribbles the position of photoresist over the substrate and does not have the position of photoresist; Adopt grinding method the thin-film material on described substrate is ground, until described photoresist does not have described thin-film material adhere to and described thin-film material concordant with the height of described photoresist time, stopping grinding operation; After described grinding operation terminates, adopt the method for etching to process the photoresist on described substrate, obtain the thin-film material of targeted graphical shape over the substrate.
Preferably, described thin-film material to be patterned is nano silver wire.
Preferably, the step of substrate being smeared photoresist specifically comprises: use spin coating instrument to be spin-coated on substrate by photoresist.
Preferably, before the step adopting the method for etching to process described photoresist, the step of photoresist being carried out to exposure-processed is also comprised.
Preferably, described acquisition has the step of the photoresist of graphics shape specifically to comprise: after adopting the method for etching to process described photoresist, the photoresist in described photoresist on exposure position is etched away, and obtains the photoresist having graphics shape.
Preferably, in the step of the described thin-film material to be patterned at the deposited on substrates scribbling photoresist, the mode of deposit film can be the one in hot evaporation, magnetron sputtering or spin coating.
Preferably, in the described step adopting the method for grinding to grind the thin-film material on described substrate, the method for grinding can be physical grinding or chemical grinding.
By Film patterning method in the application embodiment of the present invention, photoresist is not spread upon on film to be patterned, but photoresist is spread upon on substrate, and by photoresist is made the graphics shape contrary with targeted graphical shape, thus obtain the film of targeted graphical shape.The method obtains beneficial effect: can solve photoresist penetrate into that thin-film material causes cannot by the problem of this film material graphics, and photoresist can be reduced penetrate into the negative effect produced in this film.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a part of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
The idiographic flow schematic diagram of a kind of Film patterning method that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 for the embodiment of the present invention provide by the schematic flow sheet of photoetching offset plate figure; Wherein, Fig. 2 (a) is for scribbling the substrate schematic diagram of photoresist; The substrate schematic diagram of Fig. 2 (b) for the photoresist of exposure area is etched away;
The employing photoetching technique that Fig. 3 provides for the embodiment of the present invention is by the schematic diagram after Film patterning;
Fig. 4 two of providing for the embodiment of the present invention have the schematic diagram of the figure of opposite pattern structure;
Fig. 5 for the embodiment of the present invention provide by idiographic flow schematic diagram Film patterning for nano silver wire; Wherein, Fig. 5 (a) is for scribbling the substrate schematic diagram of photoresist; Fig. 5 (b) is the substrate schematic diagram after the deposited on substrates nano silver wire of Fig. 5 (a); Fig. 5 (c) be by the nano silver wire thin-film grinding on Fig. 5 (b) substrate after substrate schematic diagram; Fig. 5 (d) is the substrate schematic diagram after being etched away by the photoresist on Fig. 5 (c) substrate.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with the specific embodiment of the invention and corresponding accompanying drawing, technical solution of the present invention is clearly and completely described.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Below in conjunction with accompanying drawing, describe the technical scheme that various embodiments of the present invention provide in detail.
Embodiments provide a kind of Film patterning method, when adopting photoetching technique to be undertaken graphical by film for solving, photoresist enters the problem of film.The idiographic flow schematic diagram of the method as shown in Figure 1, comprises the steps:
Step 11: smear photoresist on substrate, and adopt the method for etching to process described photoresist, obtain the photoresist having graphics shape, the graphics shape of described photoresist is contrary with targeted graphical shape.
In this step, first on substrate, smear photoresist, usually use spin coating instrument to be spin-coated on substrate by photoresist, object makes photoresist be evenly distributed on substrate, improves adhesiveness and the film forming of photoresist.The chemical property of general photoresist under the irradiation of energy beam (light beam, electronics or ion beam etc.) can change, specifically refer to: the photoresist after energetic beam illumination, can be taken off by some solvents, therefore by controlling transmit direction and the quantity of particle in energy beam, thus photoresist can be made the shape of user's needs.
Such as, the large square in Fig. 2 (a) represents the substrate scribbling photoresist, wherein, exposes the little square area on substrate, namely with this region of ion beam irradiation, claims little square area to be exposure area here; Then corresponding solvent is adopted to etch photoresist, because the photoresist of the little square area on this substrate can be fallen by some dissolution with solvents after exposure, and the photoresist of unexposed area can remain, will be formed as the graphics shape in Fig. 2 (b) by such operation photoresist.
Usual photoresist can as mask plate in thin film technique, such as, user needs the shape made by certain film as Fig. 3, Fig. 3 is the side view of certain film, h represents the thickness of this film, at this moment the mask plate shape in Fig. 2 (b) can be adopted to etch this film, concrete step is: first, spin coating one deck photoresist on the substrate depositing this film, by above-mentioned exposing operation, this photoresist is made the shape of photoresist mask plate in Fig. 2 (b), then in exposure area because do not have photoresist to adhere to, just the thin-film material below exposure area is come out, then, the solvent that employing can dissolve this thin-film material etches this film, the thin-film material below exposure area will be dissolved, and the film having photoresist to adhere to is because there is the protection of photoresist, any change can not occur, and film now will form the shape as Fig. 3.Here the method for acquisition Fig. 3 film shape is explanation roughly, can make mask plate in practical operation according to concrete geomery, thus obtains the film with graphics shape of fixed dimension.
Above-mentionedly utilize photoetching technique by Film patterning concrete operations for prior art, directly photoresist is not spread upon in Film patterning method on thin-film material to be patterned in the embodiment of the present invention, but photoresist is smeared on substrate, here photoresist can make the photoresist of graphics shape by the method for above-mentioned exposure, and this graphics shape is contrary with the shape this film being made targeted graphical, targeted graphical shape here refers to the film pattern shape that user goes for.As shown in Figure 4: A and B is two figures with contrary graphics shape.
Above-mentioned substrate can be the glass substrate or silicon substrate that often use, can also be the substrate etc. depositing other films.And photoetching offset plate figure is the explanation of exemplary by above-mentioned employing exposure method, also has additive method in practical operation, does not do concrete restriction here.
Step 12: at the thin-film material that the described deposited on substrates scribbling photoresist is to be patterned, the thin-film material distribution of described deposition scribbles the position of photoresist over the substrate and does not have the position of photoresist.
In a step 11, substrate has been formed the photoresist of graphics shape, in this step, this patterned photoresist deposits thin-film material to be patterned, here the mode of deposit film can be hot evaporation, magnetron sputtering or spin coating etc., and thin-film material can be common thin-film material, such as: silverskin, golden film, organic film etc.Can also be special material, such as: metal nanoparticle, metal triangular etc.When the deposited on substrates thin-film material of this patterned photoresist, thin-film material can be distributed in substrate to be had the position of photoresist and not to have the position of photoresist, as shown in Fig. 5 (b): by nano silver wire thin film deposition to be patterned on the substrate of photoresist having graphics shape, can see that nano silver wire thin-film material can distribute on a photoresist and not have on the substrate of photoresist.
Step 13: adopt grinding method the thin-film material on described substrate is ground, until described photoresist does not have described thin-film material adhere to and described thin-film material concordant with the height of described photoresist time, stopping grinding operation.
In this step, need the thin-film material exceeding photoresist height to remove, conventional method is grinding technics, and grinding technics here can be physical grinding or chemical grinding.Physical grinding method can be adopt the mode of grinder buffing to be polished off by the thin-film material exceeding photoresist height, as shown in Fig. 5 (c): by grinding operation, the thin-film material (as Fig. 5 (b)) exceeding photoresist height is polished off, concrete step is: photoresist is polished to the position concordant with the height of photoresist, and when photoresist does not at this moment have thin-film material to adhere to, stop grinding operation.
Step 14: after described grinding operation terminates, adopts the method for etching to process the photoresist on described substrate, obtains the thin-film material of targeted graphical shape over the substrate.
After the grinding operation of step 13 terminates, need photoresist to remove, the method removing photoresist can be expose photoresist by the method for exposure equally, then use corresponding solution to be removed by photoresist, and this solution does not affect on thin-film material.Contrary with the targeted graphical shape of film to be patterned owing to the graphics shape of photoresist on substrate being prepared in step 11, therefore after utilizing this step to be removed by photoresist, the graphics shape of remaining film is exactly targeted graphical shape, and targeted graphical shape here refers to the graphics shape that user needs.
In order to the method for the above-mentioned film graphics of explanation clearly, by complete example, the method is described, suppose to treat that the film of image conversion is nano silver wire film, as shown in Figure 5: the first step, substrate is smeared one deck photoresist, and this photoresist is made the graphics shape (as Fig. 5 (a)) contrary with targeted graphical shape, targeted graphical shape here refers to that nano silver wire film will make graphics shape; Second step: scribbling the deposited on substrates nano silver wire film (as Fig. 5 (b)) of photoresist, this nano silver wire film can be distributed in substrate to be had the position of photoresist and not to have the position of photoresist; 3rd step: the nano silver wire film exceeding photoresist height is ground by the method for grinding, to be ground to expose this photoresist and the thin-film material now position concordant with photoresist height time, stop grinding operation (as Fig. 5 (c)); 4th step: after operation to be ground terminates, got rid of by photoresist, now can leave the nano silver wire film (as Fig. 5 (d)) of targeted graphical shape on substrate.
When the application embodiment of the present invention is carried out graphical to film, photoresist is not spread upon on film to be patterned, but photoresist is spread upon on substrate, and by photoresist is made the graphics shape contrary with targeted graphical shape, thus obtain the film of targeted graphical shape.The method obtains beneficial effect: can solve photoresist penetrate into that thin-film material causes cannot by the problem of this film material graphics, and photoresist can be reduced penetrate into the negative effect produced in this film.
These are only embodiments of the invention, be not limited to the present invention.To those skilled in the art, the present invention can have various modifications and variations.All do within spirit of the present invention and principle any amendment, equivalent replacement, improvement etc., all should be included within right of the present invention.
Claims (7)
1. a Film patterning method, is characterized in that, the method comprises:
Substrate smears photoresist, and adopts the method for etching to process described photoresist, obtain the photoresist having graphics shape, the graphics shape of described photoresist is contrary with targeted graphical shape;
At the thin-film material that the described deposited on substrates scribbling photoresist is to be patterned, the thin-film material distribution of described deposition scribbles the position of photoresist over the substrate and does not have the position of photoresist;
Adopt grinding method the thin-film material on described substrate is ground, until described photoresist does not have described thin-film material adhere to and described thin-film material concordant with the height of described photoresist time, stopping grinding operation;
After described grinding operation terminates, adopt the method for etching to process the photoresist on described substrate, obtain the thin-film material of targeted graphical shape over the substrate.
2. method according to claim 1, is characterized in that, described thin-film material to be patterned is nano silver wire.
3. method according to claim 1, is characterized in that, the step that substrate is smeared photoresist specifically comprises:
Spin coating instrument is used to be spin-coated on substrate by photoresist.
4. method according to claim 1, is characterized in that, before the step adopting the method for etching to process described photoresist, also comprises the step of photoresist being carried out to exposure-processed.
5. method according to claim 4, is characterized in that, described acquisition has the step of the photoresist of graphics shape specifically to comprise:
After adopting the method for etching to process described photoresist, the photoresist in described photoresist on exposure position is etched away, and obtains the photoresist having graphics shape.
6. method according to claim 1, is characterized in that, in the step of the described thin-film material to be patterned at the deposited on substrates scribbling photoresist, the mode of deposit film can be the one in hot evaporation, magnetron sputtering or spin coating.
7. method according to claim 1, is characterized in that, in the described step adopting the method for grinding to grind the thin-film material on described substrate, the method for grinding can be physical grinding or chemical grinding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510981630.6A CN105575789A (en) | 2015-12-23 | 2015-12-23 | Method for patterning thin film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510981630.6A CN105575789A (en) | 2015-12-23 | 2015-12-23 | Method for patterning thin film |
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| CN105575789A true CN105575789A (en) | 2016-05-11 |
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| CN201510981630.6A Pending CN105575789A (en) | 2015-12-23 | 2015-12-23 | Method for patterning thin film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951707A (en) * | 2019-12-11 | 2021-06-11 | 株洲中车时代电气股份有限公司 | Film and preparation method and application thereof |
| CN114460819A (en) * | 2022-01-14 | 2022-05-10 | 北京量子信息科学研究院 | Alignment mark for electron beam exposure and preparation method thereof |
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|---|---|---|---|---|
| JPS6466942A (en) * | 1987-09-07 | 1989-03-13 | Oki Electric Ind Co Ltd | Formation of thin-film pattern |
| CN101143699A (en) * | 2007-11-08 | 2008-03-19 | 上海交通大学 | Universal film material graphics method |
| CN101944434A (en) * | 2010-07-16 | 2011-01-12 | 清华大学 | Polymer composite material embedded microcapacitor and preparation method thereof |
| CN102593047A (en) * | 2012-02-24 | 2012-07-18 | 温州大学 | Preparation method of conductive film pattern layer based on oil-solubility nano-particle ink |
| CN104992905A (en) * | 2015-06-05 | 2015-10-21 | 中国科学院上海微系统与信息技术研究所 | Boron nitride substrate surface step etching method |
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2015
- 2015-12-23 CN CN201510981630.6A patent/CN105575789A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6466942A (en) * | 1987-09-07 | 1989-03-13 | Oki Electric Ind Co Ltd | Formation of thin-film pattern |
| CN101143699A (en) * | 2007-11-08 | 2008-03-19 | 上海交通大学 | Universal film material graphics method |
| CN101944434A (en) * | 2010-07-16 | 2011-01-12 | 清华大学 | Polymer composite material embedded microcapacitor and preparation method thereof |
| CN102593047A (en) * | 2012-02-24 | 2012-07-18 | 温州大学 | Preparation method of conductive film pattern layer based on oil-solubility nano-particle ink |
| CN104992905A (en) * | 2015-06-05 | 2015-10-21 | 中国科学院上海微系统与信息技术研究所 | Boron nitride substrate surface step etching method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951707A (en) * | 2019-12-11 | 2021-06-11 | 株洲中车时代电气股份有限公司 | Film and preparation method and application thereof |
| CN114460819A (en) * | 2022-01-14 | 2022-05-10 | 北京量子信息科学研究院 | Alignment mark for electron beam exposure and preparation method thereof |
| CN114460819B (en) * | 2022-01-14 | 2024-01-26 | 北京量子信息科学研究院 | Alignment mark for electron beam exposure and preparation method thereof |
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Application publication date: 20160511 |
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