CN202530150U - Evaporation mask plate - Google Patents
Evaporation mask plate Download PDFInfo
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- CN202530150U CN202530150U CN2012200159334U CN201220015933U CN202530150U CN 202530150 U CN202530150 U CN 202530150U CN 2012200159334 U CN2012200159334 U CN 2012200159334U CN 201220015933 U CN201220015933 U CN 201220015933U CN 202530150 U CN202530150 U CN 202530150U
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- mask plate
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- deposition mask
- etching
- opening
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Abstract
The utility model relates to an evaporation mask plate. An opening graphics area and an icon pattern area are arranged on the evaporation mask plate, icon patterns are through holes, and the icon patterns and opening graphics are integrally formed. The evaporation mask plate and a manufacturing method thereof have the advantages that manufacturing cost is low as the opening graphics and the icon patterns are integrally formed, the icon patterns can be changed, evaporation precision is high, the process is simple, and the evaporation mask plate has a broad market prospect.
Description
Technical field
The utility model relates to a kind of deposition mask plate, relates in particular to extremely making method of a kind of mask plate that is used to be manufactured with organic electroluminescence devices.
Background technology
Electroluminescent device is a kind of effective optical device, and it has: spacious angle of visibility, high-quality contrast gradient and corresponding speed etc. is a bit faster.Organic electroluminescenoe device and inorganic light-emitting device are formed electroluminescent device.The difference of the two is based on the difference of the substance classes that forms electroluminescent layer.Organic electroluminescenoe device is compared with the inorganic electroluminescent device, has higher sharpness and quicker response.And it has better colored display performance.
Organic electroluminescenoe device comprises several sections: transparent substrate; Have predetermined pattern first electrode (like anode), be formed on the said transparent substrate; Organic luminous layer, it has on the said transparent substrate of electrode through the vacuum deposition method vapor deposition; Second electrode (like negative electrode), it is formed on the said organic luminous layer with the direction with said first electrode crossing.
In the process of making organic electroluminescenoe device, first electrode is processed by ITO.The pattern of ITO is processed through photolithography usually.Promptly use the etching solution that contains iron(ic)chloride to form pattern through wet etch method.Because when making second electrode, if still make of etching method, moisture possibly enter into the organic luminous layer and second gaps between electrodes, thereby has influence on the performance of organic electroluminescenoe device, seriously can influence its work-ing life.So adopt vacuum deposition method to be formed with the organic electroluminescent material of airport electroluminescent layer now.The mask that has in this process with the second electrode identical patterns can be set on the electroluminescent layer, and the material that is used to form second electrode can be deposited.
Mention a kind of main mask in the documents 200410087462.8 and have the separable mask of icon pattern, be used for forming the icon pattern at organic luminous layer with another with fine pitches pattern.There is certain problem in this kind icon forming method:
The icon pattern is fixed, and is immutable, and vapor deposition icon pattern has limitation;
To produce the combining of mask strips with icon pattern and main mask looseningly, in evaporate process, can produce accuracy error;
Evaporate process needs mask plate to be close to substrate, and the fit mask integral slab face unfairness phenomenon that can produce of this mask set influences the vapor deposition effect;
Do not change the mask graph zone though can change icon, this kind mask plate manufacture craft is loaded down with trivial details, and cost is high.
Therefore, need a kind of new mask plate to address the above problem, and form the icon pattern.
The utility model content
The technical problem that the utility model will solve provides a kind of deposition mask plate, and mask plate is one-body molded, in evaporate process, can not become flexible, and can not produce accuracy error, and the icon pattern is variable, and vapor deposition accuracy is high.
In order to solve the problems of the technologies described above, the technical scheme that the utility model is taked is following:
A kind of deposition mask plate is characterized in that, on said vapor deposition mask plate, is provided with opening figure zone and icon area of the pattern, and said icon pattern is a through hole; Described icon pattern and opening figure are one-body molded.
Preferably, the material of said deposition mask plate is Invar alloy, Rhometal, nickel cobalt (alloy) or pure nickel.
Preferably, the thickness of said deposition mask plate is 20-100 μ m.
The thickness of said deposition mask plate is 20 μ m.
The thickness of said deposition mask plate is 100 μ m.
The thickness of said deposition mask plate is 60 μ m.
The making method step of deposition mask plate is following:
The first step: pretreatment of base material;
Second step: pad pasting;
The 3rd step: exposure, development;
The 4th step: etching;
The 5th step: demoulding.
The said the first step comprises carries out two-sided sandblast to base material, removes the impurity of substrate surface, improves the bonding force between dry film and the base material.
Said second step comprises carries out two-sided pad pasting to the base material after handling.
Said the 3rd step comprises: the base material behind the pad pasting is carried out double-sided exposure, and the exposure area is except that opening figure and the zone of the dry film the icon graphic; Base material to after the exposure develops, and removes unexposed dry film, i.e. the dry film in opening figure and icon graphic zone.
Said the 4th step comprises carries out etching to the base material behind the exposure imaging, and etching area is no dry film zone, i.e. opening figure and icon graphic zone.
Said etched parameter is following: etching parameter is following: the etching useful length is 5-10m; Etch temperature is 50 ± 1 ℃; Liquid etching composition is iron(ic)chloride, VAL-DROP, concentrated hydrochloric acid; Etching solution proportion is 1.35-1.50g/cm
3The etching transfer rate is 30-50Hz; Etching solution pH is 1.5-1.7.
Said the 5th step comprises that the base material after the etching is carried out demoulding to be handled.
Base material is Invar alloy, Rhometal, nickel cobalt (alloy) or pure nickel.
The utility model provides a kind of deposition mask plate, and opening figure and icon pattern are one-body molded, and cost of manufacture is low, and icon pattern and preparation method thereof is variable, and vapor deposition accuracy is high, and technology is simple, has vast market prospect.
Description of drawings
Below in conjunction with accompanying drawing the embodiment of the utility model is done further detailed explanation.
Fig. 1 is the structure iron of deposition mask plate;
Fig. 2 is Figure 1A part enlarged view;
1 is mask plate among the figure, and 2 is the opening figure zone, and 3 is the icon area of the pattern, and 4 is opening, and 5 is icon.
Embodiment
Embodiment 1:
A kind of making method of deposition mask plate, concrete process step is following: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material to after handling carries out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is except that opening figure and the zone of the dry film the icon graphic.
Base material to after the exposure carries out developing process, removes unexposed dry film, i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Said etching parameter is following:
The etching useful length is 5-10m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic)chloride, VAL-DROP, concentrated hydrochloric acid;
Etching solution proportion is 1.35-1.50g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
Through control, reach the sharpness of icon pattern and the control of anti-degree of cleaning to etching parameter.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, and film forming material infiltrates in the slit between mask plate and the substrate in the evaporate process otherwise can cause, and reduces the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of said icon 5 is a through hole; Opening 4 is a slit, and the said deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of said deposition mask plate is an Invar alloy.The thickness of said deposition mask plate is 20-100 μ m.
A kind of deposition mask plate that the utility model relates to is the mask plate that is used to be manufactured with organic electroluminescence devices, specifically is the making that is used for a thin layer of this organic light-emitting device.
Embodiment 2:
A kind of making method of deposition mask plate, concrete process step is following: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material to after handling carries out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is except that opening figure and the zone of the dry film the icon graphic.
Base material to after the exposure carries out developing process, removes unexposed dry film, i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Said etching parameter is following:
The etching useful length is 6-10m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic)chloride, VAL-DROP, concentrated hydrochloric acid;
Etching solution proportion is 1.39-1.47g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
Through control, reach the sharpness of icon pattern and the control of anti-degree of cleaning to etching parameter.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, and film forming material infiltrates in the slit between mask plate and the substrate in the evaporate process otherwise can cause, and reduces the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of said icon 5 is a through hole; Opening 4 is a slit, and the said deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of said deposition mask plate is a Rhometal.The thickness of said deposition mask plate is 20-100 μ m.
A kind of deposition mask plate that the utility model relates to is the mask plate that is used to be manufactured with organic electroluminescence devices, specifically is the making that is used for a thin layer of this organic light-emitting device.
Embodiment 3:
A kind of making method of deposition mask plate, concrete process step is following: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material to after handling carries out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is except that opening figure and the zone of the dry film the icon graphic.
Base material to after the exposure carries out developing process, removes unexposed dry film, i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Said etching parameter is following:
The etching useful length is 6-8m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic)chloride, VAL-DROP, concentrated hydrochloric acid;
Etching solution proportion is 1.35-1.47g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
Through control, reach the sharpness of icon pattern and the control of anti-degree of cleaning to etching parameter.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, and film forming material infiltrates in the slit between mask plate and the substrate in the evaporate process otherwise can cause, and reduces the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of said icon 5 is a through hole; Opening 4 is a slit, and the said deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of said deposition mask plate is a nickel cobalt (alloy).The thickness of said deposition mask plate is 20-100 μ m.
A kind of deposition mask plate that the utility model relates to is the mask plate that is used to be manufactured with organic electroluminescence devices, specifically is the making that is used for a thin layer of this organic light-emitting device.
Embodiment 4:
A kind of making method of deposition mask plate, concrete process step is following: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material to after handling carries out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is except that opening figure and the zone of the dry film the icon graphic.
Base material to after the exposure carries out developing process, removes unexposed dry film, i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Said etching parameter is following:
The etching useful length is 6-8m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic)chloride, VAL-DROP, concentrated hydrochloric acid;
Etching solution proportion is 1.40-1.45g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
Through control, reach the sharpness of icon pattern and the control of anti-degree of cleaning to etching parameter.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, and film forming material infiltrates in the slit between mask plate and the substrate in the evaporate process otherwise can cause, and reduces the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of said icon 5 is a through hole; Opening 4 is a slit, and the said deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of said deposition mask plate is a pure nickel.The thickness of said deposition mask plate is 20-50 μ m.
A kind of deposition mask plate that the utility model relates to is the mask plate that is used to be manufactured with organic electroluminescence devices, specifically is the making that is used for a thin layer of this organic light-emitting device.
Above embodiment purpose is to explain the utility model, and the protection domain of unrestricted the utility model, all application that come by the utility model simple change all drop in the protection domain of the utility model.
Claims (6)
1. a deposition mask plate is characterized in that, on said vapor deposition mask plate, is provided with opening figure zone and icon area of the pattern, and said icon pattern is a through hole; Described icon pattern and opening figure are one-body molded.
2. deposition mask plate according to claim 1 is characterized in that, the material of said deposition mask plate is Invar alloy, Rhometal, nickel cobalt (alloy) or pure nickel.
3. deposition mask plate according to claim 1 and 2 is characterized in that, the thickness of said deposition mask plate is 20-100 μ m.
4. deposition mask plate according to claim 3 is characterized in that, the thickness of said deposition mask plate is 20 μ m.
5. deposition mask plate according to claim 3 is characterized in that, the thickness of said deposition mask plate is 100 μ m.
6. deposition mask plate according to claim 3 is characterized in that, the thickness of said deposition mask plate is 60 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200159334U CN202530150U (en) | 2012-01-16 | 2012-01-16 | Evaporation mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200159334U CN202530150U (en) | 2012-01-16 | 2012-01-16 | Evaporation mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202530150U true CN202530150U (en) | 2012-11-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200159334U Expired - Fee Related CN202530150U (en) | 2012-01-16 | 2012-01-16 | Evaporation mask plate |
Country Status (1)
| Country | Link |
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| CN (1) | CN202530150U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866228A (en) * | 2012-12-10 | 2014-06-18 | 昆山允升吉光电科技有限公司 | Auxiliary jig for manufacturing mask plate for large-area evaporation and its use method |
| CN103869601A (en) * | 2012-12-10 | 2014-06-18 | 昆山允升吉光电科技有限公司 | Mask plate with fixed auxiliary edge and manufacture method |
| CN104018116A (en) * | 2013-03-01 | 2014-09-03 | 昆山允升吉光电科技有限公司 | Mask plate with auxiliary opening and manufacturing method thereof |
| CN105908123A (en) * | 2016-06-16 | 2016-08-31 | 中国华能集团公司 | Mask plate for vapor deposition coating of thin film solar cell |
| CN108456846A (en) * | 2018-03-30 | 2018-08-28 | 昆山国显光电有限公司 | Mask plate and preparation method thereof |
-
2012
- 2012-01-16 CN CN2012200159334U patent/CN202530150U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866228A (en) * | 2012-12-10 | 2014-06-18 | 昆山允升吉光电科技有限公司 | Auxiliary jig for manufacturing mask plate for large-area evaporation and its use method |
| CN103869601A (en) * | 2012-12-10 | 2014-06-18 | 昆山允升吉光电科技有限公司 | Mask plate with fixed auxiliary edge and manufacture method |
| CN103866228B (en) * | 2012-12-10 | 2018-04-27 | 昆山允升吉光电科技有限公司 | A kind of auxiliary fixture and its application method for making large area evaporation mask plate |
| CN104018116A (en) * | 2013-03-01 | 2014-09-03 | 昆山允升吉光电科技有限公司 | Mask plate with auxiliary opening and manufacturing method thereof |
| CN105908123A (en) * | 2016-06-16 | 2016-08-31 | 中国华能集团公司 | Mask plate for vapor deposition coating of thin film solar cell |
| CN105908123B (en) * | 2016-06-16 | 2018-07-06 | 中国华能集团公司 | For the mask plate of thin-film solar cells gas-phase deposition coating |
| CN108456846A (en) * | 2018-03-30 | 2018-08-28 | 昆山国显光电有限公司 | Mask plate and preparation method thereof |
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Effective date of registration: 20190808 Granted publication date: 20121114 |
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| PP01 | Preservation of patent right | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20220116 Granted publication date: 20121114 |
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| PD01 | Discharge of preservation of patent | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121114 Termination date: 20200116 |
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| CF01 | Termination of patent right due to non-payment of annual fee |