CN103205701A - A vapor deposition mask plate and a production method thereof - Google Patents
A vapor deposition mask plate and a production method thereof Download PDFInfo
- Publication number
- CN103205701A CN103205701A CN2012100107847A CN201210010784A CN103205701A CN 103205701 A CN103205701 A CN 103205701A CN 2012100107847 A CN2012100107847 A CN 2012100107847A CN 201210010784 A CN201210010784 A CN 201210010784A CN 103205701 A CN103205701 A CN 103205701A
- Authority
- CN
- China
- Prior art keywords
- mask plate
- deposition mask
- etching
- icon
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a vapor deposition mask plate and a production method thereof. The production method comprises the following steps: step one, substrate pre-treatment; step two, film mounting; step three, exposure, and development; step four, etching; and step five, film stripping. The vapor deposition mask plate is provided with opening pattern areas and icon pattern areas, wherein the icon pattern area are through holes; and icon patterns and opening patterns are integrally molded. According to the vapor deposition mask plate and the production method thereof provided by the present invention, the opening patterns and the icon patterns are integrally molded, the production cost is low, the icons patterns are variable, the deposition precision is high, and the process is simple, so broad market prospects are provided.
Description
?
Technical field
The present invention relates to a kind of deposition mask plate and preparation method thereof, relate in particular to a kind of be used to the mask plate that is manufactured with organic electroluminescence devices making method extremely.
?
Background technology
Electroluminescent device is a kind of effective optical device, and it has: spacious angle of visibility, high-quality contrast gradient and corresponding speed etc. is a bit faster.Organic electroluminescenoe device and inorganic light-emitting device are formed electroluminescent device.The difference of the two is based on the difference of the substance classes that forms electroluminescent layer.Organic electroluminescenoe device is compared with the inorganic electroluminescent device, has higher sharpness and quicker response.And it has better colored display performance.
Organic electroluminescenoe device comprises several sections: transparent substrate; Have predetermined pattern first electrode (as anode), be formed on the described transparent substrate; Organic luminous layer, it has on the described transparent substrate of electrode by the vacuum deposition method evaporation; Second electrode (as negative electrode), it is formed on the described organic luminous layer with the direction with described first electrode crossing.
In the process of making organic electroluminescenoe device, first electrode is made by ITO.The pattern of ITO is made by photolithography usually.Namely use the etching solution that contains iron(ic) chloride to form pattern by wet etch method.Because when making second electrode, if still make of etching method, moisture may enter into organic luminous layer and second gaps between electrodes, thereby has influence on the performance of organic electroluminescenoe device, seriously can influence its work-ing life.So adopt vacuum deposition method to be formed with the organic electroluminescent material of airport electroluminescent layer now.The mask that has in this process with the second electrode identical patterns can be arranged on the electroluminescent layer, and the material that is used to form second electrode can be deposited.
Mention a kind of main mask with fine pitches pattern in the documents 200410087462.8 and have the separable mask of icon pattern with another, be used for forming the icon pattern at organic luminous layer.There is certain problem in this kind icon forming method:
The icon pattern is fixed, and is immutable, and evaporation icon pattern has limitation;
Have the mask strips of icon pattern and becoming flexible in conjunction with producing of main mask, in evaporate process, can produce accuracy error;
Evaporate process needs mask plate to be close to substrate, and the fit mask integral slab face unfairness phenomenon that can produce of this mask set influences the evaporation effect;
Do not change the mask graph zone though can change icon, this kind mask plate manufacture craft is loaded down with trivial details, the cost height.
Therefore, need a kind of new mask plate to address the above problem, and form the icon pattern.
?
Summary of the invention
The technical problem to be solved in the present invention provides a kind of deposition mask plate and preparation method thereof, and mask plate is one-body molded, can not become flexible in evaporate process, can not produce accuracy error, and the icon pattern is variable, the vapor deposition accuracy height.
In order to solve the problems of the technologies described above, the technical scheme that the present invention takes is as follows:
A kind of making method of deposition mask plate is characterized in that, may further comprise the steps:
The first step: pretreatment of base material;
Second step: pad pasting;
The 3rd step: exposure, development;
The 4th step: etching;
The 5th step: demoulding.
The described the first step comprises carries out two-sided sandblast to base material, removes the impurity of substrate surface, improves the bonding force between dry film and the base material.
Described second step comprises carries out two-sided pad pasting to the base material after handling.
Described the 3rd step comprises: the base material behind the pad pasting is carried out double-sided exposure, and the exposure area is the dry film zone except opening figure and icon graphic; Base material after the exposure is developed, and remove unexposed dry film, be i.e. the dry film in opening figure and icon graphic zone.
Described the 4th step comprises carries out etching to the base material behind the exposure imaging, and etching area is no dry film zone, i.e. opening figure and icon graphic zone.
Described etched parameter is as follows: etching parameter is as follows: the etching useful length is 5-10m; Etch temperature is 50 ± 1 ℃; Liquid etching composition is iron(ic) chloride, sodium chlorate, concentrated hydrochloric acid; Etching solution proportion is 1.35-1.50g/cm
3The etching transfer rate is 30-50Hz; Etching solution pH is 1.5-1.7.
Described the 5th step comprises that the base material after the etching is carried out demoulding to be handled.
Base material is Invar alloy, Rhometal, nickel cobalt (alloy) or pure nickel.
A kind of deposition mask plate is characterized in that, is made with above-mentioned method.
Be provided with opening figure zone and icon area of the pattern at described evaporation mask plate, described icon pattern is through hole; Described icon pattern and opening figure are one-body molded.
The material of described deposition mask plate is Invar alloy, Rhometal, nickel cobalt (alloy) or pure nickel.
The thickness of described deposition mask plate is 20-100 μ m.
The invention provides a kind of deposition mask plate and preparation method thereof, opening figure and icon pattern are one-body molded, and cost of manufacture is low, and the icon pattern is variable, the vapor deposition accuracy height, and technology is simple, has vast market prospect.
?
Description of drawings
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail.
Fig. 1 is the structure iron of deposition mask plate;
Fig. 2 is Figure 1A part enlarged view;
1 is mask plate among the figure, and 2 is the opening figure zone, and 3 is the icon area of the pattern, and 4 is opening, and 5 is icon.
?
Embodiment
Embodiment 1:
A kind of making method of deposition mask plate, concrete processing step is as follows: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material after handling is carried out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is the dry film zone except opening figure and icon graphic.
Base material after the exposure is carried out developing process, remove unexposed dry film, be i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Described etching parameter is as follows:
The etching useful length is 5-10m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic) chloride, sodium chlorate, concentrated hydrochloric acid;
Etching solution proportion is 1.35-1.50g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
By the control to etching parameter, reach the sharpness of icon pattern and the control of anti-degree of cleaning.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, otherwise can cause film forming material in the evaporate process to infiltrate in the slit between mask plate and the substrate, reduce the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of described icon 5 is through hole; Opening 4 is slit, and the described deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of described deposition mask plate is Invar alloy.The thickness of described deposition mask plate is 20-100 μ m.
A kind of deposition mask plate that the present invention relates to is be used to the mask plate that is manufactured with organic electroluminescence devices, specifically is the making for a thin layer of this organic light-emitting device.
Embodiment 2:
A kind of making method of deposition mask plate, concrete processing step is as follows: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material after handling is carried out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is the dry film zone except opening figure and icon graphic.
Base material after the exposure is carried out developing process, remove unexposed dry film, be i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Described etching parameter is as follows:
The etching useful length is 6-10m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic) chloride, sodium chlorate, concentrated hydrochloric acid;
Etching solution proportion is 1.39-1.47g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
By the control to etching parameter, reach the sharpness of icon pattern and the control of anti-degree of cleaning.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, otherwise can cause film forming material in the evaporate process to infiltrate in the slit between mask plate and the substrate, reduce the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of described icon 5 is through hole; Opening 4 is slit, and the described deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of described deposition mask plate is Rhometal.The thickness of described deposition mask plate is 20-100 μ m.
A kind of deposition mask plate that the present invention relates to is be used to the mask plate that is manufactured with organic electroluminescence devices, specifically is the making for a thin layer of this organic light-emitting device.
Embodiment 3:
A kind of making method of deposition mask plate, concrete processing step is as follows: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material after handling is carried out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is the dry film zone except opening figure and icon graphic.
Base material after the exposure is carried out developing process, remove unexposed dry film, be i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Described etching parameter is as follows:
The etching useful length is 6-8m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic) chloride, sodium chlorate, concentrated hydrochloric acid;
Etching solution proportion is 1.35-1.47g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
By the control to etching parameter, reach the sharpness of icon pattern and the control of anti-degree of cleaning.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, otherwise can cause film forming material in the evaporate process to infiltrate in the slit between mask plate and the substrate, reduce the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of described icon 5 is through hole; Opening 4 is slit, and the described deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of described deposition mask plate is nickel cobalt (alloy).The thickness of described deposition mask plate is 20-100 μ m.
A kind of deposition mask plate that the present invention relates to is be used to the mask plate that is manufactured with organic electroluminescence devices, specifically is the making for a thin layer of this organic light-emitting device.
Embodiment 4:
A kind of making method of deposition mask plate, concrete processing step is as follows: pretreatment of base material → pad pasting → exposure → development → etching → demoulding.
Wherein pre-treatment: base material is carried out two-sided sandblast, remove the impurity of substrate surface, improve the bonding force between dry film and the plate.
Base material after handling is carried out two-sided pad pasting.
Carry out double-sided exposure behind the pad pasting, exposed feature is that the exposure area is the dry film zone except opening figure and icon graphic.
Base material after the exposure is carried out developing process, remove unexposed dry film, be i.e. the dry film in opening figure zone and icon graphic zone.Can expose any icon pattern according to different demands, technology is simple.
Described etching parameter is as follows:
The etching useful length is 6-8m;
Etch temperature is 50 ± 1 ℃;
Liquid etching composition is iron(ic) chloride, sodium chlorate, concentrated hydrochloric acid;
Etching solution proportion is 1.40-1.45g/cm
3
The etching transfer rate is 30-50Hz;
Etching solution pH is 1.5-1.7.
Etching area is no dry film zone, i.e. opening figure zone and icon graphic zone.
By the control to etching parameter, reach the sharpness of icon pattern and the control of anti-degree of cleaning.
Base material after the etching is carried out demoulding to be handled.
Etched icon graphic top and bottom are smooth, and in the evaporation process, mask plate needs to fit tightly with substrate, otherwise can cause film forming material in the evaporate process to infiltrate in the slit between mask plate and the substrate, reduce the yield polymer films of organic materials.
Shown in Fig. 1-2, a kind of deposition mask plate comprises opening figure zone 2, icon area of the pattern 3, opening 4 and icon 5.The pattern of described icon 5 is through hole; Opening 4 is slit, and the described deposition mask plate that has icon pattern and an opening figure is one-body molded.The material of described deposition mask plate is pure nickel.The thickness of described deposition mask plate is 20-50 μ m.
A kind of deposition mask plate that the present invention relates to is be used to the mask plate that is manufactured with organic electroluminescence devices, specifically is the making for a thin layer of this organic light-emitting device.
Above embodiment purpose is to illustrate the present invention, and unrestricted protection scope of the present invention, all application that come by simple change of the present invention all drop in protection scope of the present invention.
Claims (10)
1. the making method of a deposition mask plate is characterized in that, may further comprise the steps:
The first step: pretreatment of base material;
Second step: pad pasting;
The 3rd step: exposure, development;
The 4th step: etching;
The 5th step: demoulding.
2. the making method of deposition mask plate according to claim 1 is characterized in that, the described the first step comprises carries out two-sided sandblast to base material, removes the impurity of substrate surface, improves the bonding force between dry film and the plate.
3. the making method of deposition mask plate according to claim 1 is characterized in that, described second step comprises carries out two-sided pad pasting to the base material after handling.
4. the making method of deposition mask plate according to claim 1 is characterized in that, described the 3rd step comprises: the base material behind the pad pasting is carried out double-sided exposure, and the exposure area is the dry film zone except opening figure and icon graphic; Base material after the exposure is developed, and remove unexposed dry film, be i.e. the dry film in opening figure and icon graphic zone.
5. the making method of deposition mask plate according to claim 1 is characterized in that, described the 4th step comprises carries out etching to the base material behind the exposure imaging, and etching area is no dry film zone, i.e. opening figure and icon graphic zone.
6. the making method of deposition mask plate according to claim 5 is characterized in that, described etched parameter is as follows: the etching useful length is 5-10m; Etch temperature is 50 ± 1 ℃; Liquid etching composition is iron(ic) chloride, sodium chlorate, concentrated hydrochloric acid; Etching solution proportion is 1.35-1.50g/cm
3The etching transfer rate is 30-50Hz; Etching solution pH is 1.5-1.7.
7. a deposition mask plate is characterized in that, is made with the described method of claim 1-6.
8. deposition mask plate according to claim 7 is characterized in that, is provided with opening figure zone and icon area of the pattern at described evaporation mask plate, and described icon pattern is through hole; Described icon pattern and opening figure are one-body molded.
9. deposition mask plate according to claim 7 is characterized in that, the material of described deposition mask plate be Invar alloy,, Rhometal, nickel cobalt (alloy) or pure nickel.
10. according to claim 7 or 8 described deposition mask plates, it is characterized in that the thickness of described deposition mask plate is 20-100 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100107847A CN103205701A (en) | 2012-01-16 | 2012-01-16 | A vapor deposition mask plate and a production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100107847A CN103205701A (en) | 2012-01-16 | 2012-01-16 | A vapor deposition mask plate and a production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103205701A true CN103205701A (en) | 2013-07-17 |
Family
ID=48753103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100107847A Pending CN103205701A (en) | 2012-01-16 | 2012-01-16 | A vapor deposition mask plate and a production method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103205701A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103556113A (en) * | 2013-10-30 | 2014-02-05 | 昆山允升吉光电科技有限公司 | Method for producing high-precision mask plate |
| CN104505471A (en) * | 2014-12-22 | 2015-04-08 | 昆山工研院新型平板显示技术中心有限公司 | Preparation method of high-opening-ratio mask board and mask board |
| CN104854254A (en) * | 2013-01-10 | 2015-08-19 | 大日本印刷株式会社 | Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate |
| CN106460150A (en) * | 2015-02-10 | 2017-02-22 | 大日本印刷株式会社 | Manufacturing method for deposition mask, metal sheet used for producing deposition mask, and manufacturing method for said metal sheet |
| CN108149190A (en) * | 2017-12-06 | 2018-06-12 | 信利（惠州）智能显示有限公司 | Mask plate and preparation method thereof |
| CN109306450A (en) * | 2018-11-28 | 2019-02-05 | 武汉华星光电半导体显示技术有限公司 | Evaporation mask plate group |
| US10233546B2 (en) | 2013-09-13 | 2019-03-19 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by use of metal plate |
| CN109735802A (en) * | 2019-03-11 | 2019-05-10 | 南京高光半导体材料有限公司 | A kind of support metal mask version and mask plate component and photomask manufacturing method |
| CN109913808A (en) * | 2019-04-16 | 2019-06-21 | 南京高光半导体材料有限公司 | The metal mask version and production method for preventing evaporated metal layer from falling off |
| US10600963B2 (en) | 2014-05-13 | 2020-03-24 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by using metal plate |
| CN112458462A (en) * | 2020-11-18 | 2021-03-09 | 匠博先进材料科技(广州)有限公司 | Vapor deposition mask manufacturing method, vapor deposition mask assembly, vapor deposition mask manufacturing device, and display device |
| US11486031B2 (en) | 2013-10-15 | 2022-11-01 | Dai Nippon Printing Co., Ltd. | Metal plate |
| CN115627443A (en) * | 2020-11-18 | 2023-01-20 | 匠博先进材料科技(广州)有限公司 | Vapor deposition mask, vapor deposition module, vapor deposition device, display device, and method and device for manufacturing display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230776A (en) * | 1988-07-20 | 1990-02-01 | Hitachi Cable Ltd | Method for regenerating etching solution |
| JP2001004034A (en) * | 1999-04-23 | 2001-01-09 | Toyota Autom Loom Works Ltd | Mechanical seal for carbon dioxide compressor |
| JP2005154879A (en) * | 2003-11-28 | 2005-06-16 | Canon Components Inc | Metal mask for vapor deposition, and method of producing vapor deposition pattern using the same |
| CN1804138A (en) * | 2005-11-14 | 2006-07-19 | 深圳市允升吉电子有限公司 | Mask electro-forming method for vaporization coating of organic light-emitting display |
| CN101114126A (en) * | 2006-07-28 | 2008-01-30 | 比亚迪股份有限公司 | Method for forming ITO pattern |
| CN101393877A (en) * | 2007-09-18 | 2009-03-25 | 新光电气工业株式会社 | Method of manufacturing a semiconductor device |
-
2012
- 2012-01-16 CN CN2012100107847A patent/CN103205701A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230776A (en) * | 1988-07-20 | 1990-02-01 | Hitachi Cable Ltd | Method for regenerating etching solution |
| JP2001004034A (en) * | 1999-04-23 | 2001-01-09 | Toyota Autom Loom Works Ltd | Mechanical seal for carbon dioxide compressor |
| JP2005154879A (en) * | 2003-11-28 | 2005-06-16 | Canon Components Inc | Metal mask for vapor deposition, and method of producing vapor deposition pattern using the same |
| CN1804138A (en) * | 2005-11-14 | 2006-07-19 | 深圳市允升吉电子有限公司 | Mask electro-forming method for vaporization coating of organic light-emitting display |
| CN101114126A (en) * | 2006-07-28 | 2008-01-30 | 比亚迪股份有限公司 | Method for forming ITO pattern |
| CN101393877A (en) * | 2007-09-18 | 2009-03-25 | 新光电气工业株式会社 | Method of manufacturing a semiconductor device |
Non-Patent Citations (4)
| Title |
|---|
| 张彩瑞: "光刻法制造开孔模板", 《电子工艺简讯》, no. 8, 31 December 1993 (1993-12-31), pages 7 - 8 * |
| 张怀武: "《现代印制电路原理与工艺》", 30 November 2009, article "三氯化铁蚀刻液", pages: 156-157 * |
| 沈锡宽: "《印刷电路技术》", 31 May 1987, article "三氯化铁蚀刻液", pages: 307-311 * |
| 盛治中: "《模切工艺与工具制造》", 31 August 2011, article "三氯化铁蚀刻液", pages: 253-254 * |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104854254A (en) * | 2013-01-10 | 2015-08-19 | 大日本印刷株式会社 | Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate |
| US10731261B2 (en) | 2013-09-13 | 2020-08-04 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by use of metal plate |
| US10233546B2 (en) | 2013-09-13 | 2019-03-19 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by use of metal plate |
| US11486031B2 (en) | 2013-10-15 | 2022-11-01 | Dai Nippon Printing Co., Ltd. | Metal plate |
| CN103556113A (en) * | 2013-10-30 | 2014-02-05 | 昆山允升吉光电科技有限公司 | Method for producing high-precision mask plate |
| US11217750B2 (en) | 2014-05-13 | 2022-01-04 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by using metal plate |
| US10600963B2 (en) | 2014-05-13 | 2020-03-24 | Dai Nippon Printing Co., Ltd. | Metal plate, method of manufacturing metal plate, and method of manufacturing mask by using metal plate |
| CN104505471A (en) * | 2014-12-22 | 2015-04-08 | 昆山工研院新型平板显示技术中心有限公司 | Preparation method of high-opening-ratio mask board and mask board |
| CN104505471B (en) * | 2014-12-22 | 2017-12-29 | 昆山工研院新型平板显示技术中心有限公司 | A kind of preparation method and mask plate of high aperture mask plate |
| CN106460150B (en) * | 2015-02-10 | 2020-01-10 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask, metal plate for manufacturing vapor deposition mask, and method for manufacturing metal plate |
| US10570498B2 (en) | 2015-02-10 | 2020-02-25 | Dai Nippon Printing Co., Ltd. | Manufacturing method for deposition mask, metal plate used for producing deposition mask, and manufacturing method for said metal sheet |
| CN110965020A (en) * | 2015-02-10 | 2020-04-07 | 大日本印刷株式会社 | Method for screening metal plate and method for manufacturing vapor deposition mask |
| US10612124B2 (en) | 2015-02-10 | 2020-04-07 | Dai Nippon Printing Co., Ltd. | Manufacturing method for deposition mask, metal plate used for producing deposition mask, and manufacturing method for said metal sheet |
| CN110965020B (en) * | 2015-02-10 | 2022-05-17 | 大日本印刷株式会社 | Method for screening metal plate and method for manufacturing vapor deposition mask |
| CN106460150A (en) * | 2015-02-10 | 2017-02-22 | 大日本印刷株式会社 | Manufacturing method for deposition mask, metal sheet used for producing deposition mask, and manufacturing method for said metal sheet |
| CN108149190A (en) * | 2017-12-06 | 2018-06-12 | 信利（惠州）智能显示有限公司 | Mask plate and preparation method thereof |
| CN109306450A (en) * | 2018-11-28 | 2019-02-05 | 武汉华星光电半导体显示技术有限公司 | Evaporation mask plate group |
| CN109735802A (en) * | 2019-03-11 | 2019-05-10 | 南京高光半导体材料有限公司 | A kind of support metal mask version and mask plate component and photomask manufacturing method |
| CN109913808A (en) * | 2019-04-16 | 2019-06-21 | 南京高光半导体材料有限公司 | The metal mask version and production method for preventing evaporated metal layer from falling off |
| CN112458462A (en) * | 2020-11-18 | 2021-03-09 | 匠博先进材料科技(广州)有限公司 | Vapor deposition mask manufacturing method, vapor deposition mask assembly, vapor deposition mask manufacturing device, and display device |
| CN115627443A (en) * | 2020-11-18 | 2023-01-20 | 匠博先进材料科技(广州)有限公司 | Vapor deposition mask, vapor deposition module, vapor deposition device, display device, and method and device for manufacturing display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103205701A (en) | A vapor deposition mask plate and a production method thereof | |
| CN202530150U (en) | Evaporation mask plate | |
| CN106784402B (en) | The preparation of non-lithographic pixel bank a kind of and its typographical display application method | |
| JP5833747B2 (en) | Double-sided patterned transparent conductive film and method for producing the same | |
| CN106898578B (en) | A kind of preparation method of display base plate, array substrate and display device | |
| CN111354508B (en) | Flexible electrode film and application | |
| US9893140B2 (en) | Display panel separation pillar and method for manufacturing the same, display panel and display device | |
| EP3333922B1 (en) | Organic luminescence unit and manufacturing method therefor | |
| CN103197501B (en) | A kind of array base palte and preparation method thereof and display device | |
| CN102747319A (en) | Preparation method of flexible mask plate | |
| CN102779942B (en) | A kind of organic thin film transistor array substrate and preparation method thereof | |
| CN103589995A (en) | Production method for mask plate | |
| CN104164647B (en) | A kind of manufacture craft of mask plate | |
| CN102779785A (en) | Organic thin film transistor array substrate and manufacturing method thereof, and display device | |
| TWI718540B (en) | Touch structure and manufacturing method thereof and touch display device | |
| CN102651457B (en) | The fixture of substrate and the fixing means based on this device | |
| CN105374467A (en) | Nanometer transfer method and nanometer functional device | |
| CN103280404A (en) | Patterned preparation method of field emission electrode on basis of vertical graphene | |
| CN102646792A (en) | Organic film transistor array substrate and preparation method thereof | |
| CN108198751A (en) | Photoresist layer stripping means | |
| CN209895135U (en) | High-precision silicon physical mask | |
| KR20120074695A (en) | Glass substrate comprising transparent electrode pattern | |
| CN103556150A (en) | Method for producing high-precision mask plate | |
| CN109216405A (en) | The manufacturing method of AMOLED metal mask plate | |
| CN103556113A (en) | Method for producing high-precision mask plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130717 |