JPH0230776A - Method for regenerating etching solution - Google Patents
Method for regenerating etching solutionInfo
- Publication number
- JPH0230776A JPH0230776A JP18061788A JP18061788A JPH0230776A JP H0230776 A JPH0230776 A JP H0230776A JP 18061788 A JP18061788 A JP 18061788A JP 18061788 A JP18061788 A JP 18061788A JP H0230776 A JPH0230776 A JP H0230776A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- soln
- etching solution
- oxidizing agent
- sodium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 55
- 230000001172 regenerating effect Effects 0.000 title claims abstract description 5
- 238000000034 method Methods 0.000 title claims description 12
- 239000007800 oxidant agent Substances 0.000 claims abstract description 10
- 239000012286 potassium permanganate Substances 0.000 claims abstract description 6
- CRWJEUDFKNYSBX-UHFFFAOYSA-N sodium;hypobromite Chemical compound [Na+].Br[O-] CRWJEUDFKNYSBX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims abstract description 3
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 claims description 5
- XUXNAKZDHHEHPC-UHFFFAOYSA-M sodium bromate Chemical compound [Na+].[O-]Br(=O)=O XUXNAKZDHHEHPC-UHFFFAOYSA-M 0.000 claims description 3
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 claims 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract description 16
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract description 16
- 230000033116 oxidation-reduction process Effects 0.000 abstract description 4
- 238000011069 regeneration method Methods 0.000 abstract description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000460 chlorine Substances 0.000 abstract description 2
- 229910052801 chlorine Inorganic materials 0.000 abstract description 2
- 230000008929 regeneration Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 12
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910001448 ferrous ion Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- WFITUPFQQAGOBI-UHFFFAOYSA-M sodium;carbonochloridate Chemical compound [Na+].[O-]C(Cl)=O WFITUPFQQAGOBI-UHFFFAOYSA-M 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
フォトエツチング法は、リードフレームや微細なパター
ン部品の加工方法として広く適用されている０本発明は
、そのエツチング液の再生に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The photoetching method is widely applied as a method for processing lead frames and fine pattern parts.The present invention relates to the regeneration of the etching solution.
［従来の技術］
フォトエツチング法は、プレス法に比べて微細加工が可
能なため、多ビンリードフレームや微細なパターン部品
の加工方法として広く適用されている。[Prior Art] The photoetching method allows finer processing than the pressing method, and is therefore widely used as a method for processing multi-bin lead frames and parts with fine patterns.
その方法は一般に金属製材料にフォトレジストのパター
ンを設けた後、金属を溶解させる薬液（以下エツチング
液と称す）中に金属製材料を浸漬するか、または金属製
材料に工・ンチンク液を噴射させることによって、フォ
トレジスト膜の設置−）ていない部分の金属を溶解させ
所望の形状のノ（ターンを作成する方法である。Generally, after forming a photoresist pattern on a metal material, the metal material is immersed in a chemical solution (hereinafter referred to as an etching solution) that dissolves the metal, or an etching solution is sprayed onto the metal material. This method melts the metal in the areas where the photoresist film is not placed and creates a turn in the desired shape.
エツチング液はソートフレーム材として多く使われる鉄
合金や銅合金用としては塩化第二鉄（ＦｅＣ１，）の濃
厚溶液か使用される。塩化第二鉄（Ｆ ｅ ＣＩ ＊
）は（１）式の反応で金属を溶解させ塩化第二鉄自身は
第一鉄イオン（Ｆ ｅ ”）に還元される。The etching solution used is a concentrated solution of ferric chloride (FeCl) for iron alloys and copper alloys, which are often used as sorting frame materials. Ferric chloride (F e CI *
) dissolves the metal by the reaction of formula (1), and ferric chloride itself is reduced to ferrous ions (F e '').
Ｆ ｅ ”＋ Ｉ ／ ｎ Ｍ ｅ −Ｆｅ”＋Ｉ
／ｎＭｅ” （１）たたしＭｅ・金属 ｎ
： Ｍ ｅの荷数Ｆｅ’“の還元によって生したＦｅ
’＋は金属を溶解させる作用を持たないため、エンチン
ク着力１多くなりＦｅ３＋の濃度か小さくなってＦ ｅ
”ｈ＜蓄積するとエツチング速度か低下し 所望のエ
ツチングパターン形状か得られなくなる。Fe”+I/nMe−Fe”+I
/nMe” (1) Tatami Me/metal n
: Fe produced by reduction of the charge number Fe'" of M e
'+ does not have the effect of dissolving metals, so the entinking force increases by 1 and the concentration of Fe3+ decreases, causing Fe
When h is accumulated, the etching speed decreases and it becomes impossible to obtain the desired etching pattern shape.
常に′高いエツチング速度を維持するためには。In order to always maintain a high etching rate.
古いエツチング液を廃棄して新液を入れ換えるかして、
蓄積したＦｅ”＋をＦｅ■に酸化再生することか必要と
なる。塩化第二鉄エツチング液は再生処理を行わなけれ
ば４２合金（４２％Ｎｉ−Ｆｅ合金） 濃度２０ ｇ
、／ １程度で１６０ピンリードフレームクラスのファ
インパターンが切れない。Either discard the old etching solution and replace it with new one,
It is necessary to oxidize and regenerate the accumulated Fe''+ into Fe■.If the ferric chloride etching solution is not regenerated, it will contain 42 alloy (42% Ni-Fe alloy) with a concentration of 20 g.
,/A fine pattern of the 160-pin lead frame class cannot be cut at around 1.
塩化第二鉄エツチング液の再生方法としては。How to regenerate ferric chloride etching solution.
塩素ガス（Ｃ１，）を吹き込み、ＦｅＣｌ２をＦｅＣ１
，（塩化第二鉄）に酸化する方法かある。Blow in chlorine gas (C1,) to convert FeCl2 to FeCl
There is a method of oxidizing it to (ferric chloride).
［発明か解決しようとする課８］
塩化第二鉄エツチング液は高価であり、使い捨てでは製
品コストかかさみ市場競争に不利でその再生使用が望ま
れるか、Ｌ記の塩素ガス（ＣＩり吹き込み法は機器の設
備費か高く肚つ作業の安全上からも問題かあり、低コス
トの塩化第：、鉄エッチンク最のＩＩｆ生か課題である
。[Question 8 to Invent or Solve] Ferric chloride etching liquid is expensive, and if it is disposable, it increases the product cost and is disadvantageous to market competition. However, there are problems with the safety of the work due to the high cost of equipment, and it is an issue to find out whether low-cost chloride etching is the best way to use iron etching.
［課題を解決するための手段］
塩化第二鉄（Ｆ ｅ Ｃ］ ｘ ）エツチング液は、使
用により金属を溶解させる作用を持たない第一鉄イオン
（Ｆｅ”）か蓄積してエツチング性能か低トするのて、
それを防止するため塩化第二鉄（ＦｅＣ１ｚ）エツチン
グ液に酸化剤を添加するものである。[Means for solving the problem] Ferric chloride (F e C] To do so,
In order to prevent this, an oxidizing agent is added to the ferric chloride (FeC1z) etching solution.
本発明て使用する酸化剤は、塩素酸ナトリウム（Ｎ ａ
ＣＩ Ｏｉ璽次亜１′！素酸ナトリウム＋ＮａＣ１０
）、過マンガン酸カリウム（ＫＭｎＯ４）、臭素酸ナト
リウム（ＮａＢｒＯ）１次亜臭素酸ナトリウム（ＮａＢ
ｒＯ）等の水溶液であることか望ましい。The oxidizing agent used in the present invention is sodium chlorate (Na
CI Oi Sejia 1'! Sodium diate + NaC10
), potassium permanganate (KMnO4), sodium bromate (NaBrO), sodium hypobromite (NaB
It is desirable that the solution be an aqueous solution such as rO).
［作用］
それにより第一鉄イオン（Ｆｅ２中）をＦｅ’十に酸化
させ、エツチング性能を元に戻し塩化第二鉄（Ｆ ｅ
Ｃｌ ｚ ）エツチング液の再生使用をｉｌ能にしだも
のである。[Action] As a result, ferrous ions (in Fe2) are oxidized to Fe', returning the etching performance to the original state and converting ferric chloride (Fe
Cl z ) This makes it possible to reuse the etching solution.
［実施例］
本発明のエツチング液の再生方法について下記の実施例
により説明する。[Example] The method for regenerating an etching solution according to the present invention will be explained with reference to the following example.
（そのｌ）
塩化第二鉄（ＦｅＣ１ｚ）を主成分とするエツチング液
を用いて、４２合金材（４２％Ｎｉ−Ｆｅ合金）をエツ
チングし、エツチング液中の４２合金溶解量（ｇ／ｌ
）に対する酸化還元電位（ＯＲＰ）を測定した。(Part 1) A 42 alloy material (42% Ni-Fe alloy) was etched using an etching solution containing ferric chloride (FeC1z) as a main component, and the amount of 42 alloy dissolved in the etching solution (g/l) was etched.
) was measured.
エツチングを全く行わない新液の酸化還元電位（ＯＲＰ
）は７００ｍＶ （ｖｓＡｇ／ＡｇＣ１）を示したか、
エツチングを行うことにより酸化還元電位（ＯＲＰ）は
徐々に低下し、その電位か５７５ｍＶに低下した時点で
エツチング速度か遅くなり所望のパターンが得られなく
なった。The oxidation-reduction potential (ORP) of the new solution without any etching
) showed 700mV (vsAg/AgC1),
As etching was performed, the oxidation-reduction potential (ORP) gradually decreased, and when the potential decreased to 575 mV, the etching rate slowed down and the desired pattern could no longer be obtained.
そこでＯＲＰ５７５ｍＶの時点で老化したエツチング液
１１当たり塩素酸ナトリウム（ＮａＣ１０３）を４０ｇ
（約２規定分）投入し、温潰４５°Ｃで３〜５時間緩や
かに攪拌した。塩素酸ナトリウム（Ｎ ａ ＣＩ Ｏｘ
）の添加により老化した工・ンチンク液中の第一鉄イ
オン（Ｆｅ”七）か酸化されてエツチングに有効なＦｅ
”十になりＯＲＰか５７５ｍＶから６４０ ｍ Ｖに−
Ｌ昇した。Therefore, at the time of ORP 575 mV, 40 g of sodium chlorate (NaC103) was added per 11 of the aged etching solution.
(approximately 2 normal amounts) and stirred gently at 45°C for 3 to 5 hours. Sodium chlorate (N a CI Ox
), the ferrous ion (Fe''7) in the aged etching solution is oxidized and becomes Fe, which is effective for etching.
``The ORP becomes 10 and goes from 575 mV to 640 mV.
L rose.
これによりエツチング速度か速くなり所望のベターン形
状か得られるようになり工・ンナンク液は再生された。As a result, the etching speed increased, a desired pattern shape could be obtained, and the etching solution was regenerated.
、塩稟酸ナトリウム（Ｎ ａ ＣＩ Ｏｚ ）を４０ｇ
（約２規定分）投与によりエツチング液の１１命は約２
倍に延びた。, 40 g of sodium chloroformate (N a CI Oz)
(Approximately 2 prescriptions) The 11 lives of the etching solution are approximately 2
It has doubled.
同様に次亜塩素酸ナトリウム（ＮａＣ１０）過マンガン
酸カリウム（ＫＭｎＯ４）、臭素酸ナトリウム（ＮａＢ
ｒＯｚ ）、次亜臭素酸ナトリウム（ＮａＢｒＯ）を夫
々約２規定分、老化したエツチング液に添加した結果、
何れもＯＲＰは上昇し、エツチング液か再生されてその
寿命か延びることか判明した。Similarly, sodium hypochlorite (NaC10), potassium permanganate (KMnO4), sodium bromate (NaB
rOz) and sodium hypobromite (NaBrO) in an amount of about 2N each to the aged etching solution.
In both cases, the ORP increased, and it was found that the etching solution was regenerated and its lifespan was extended.
第１図は各酸化剤を夫々約２規定分添加した場合の酸化
還元電位の変化を示した線図である。FIG. 1 is a diagram showing changes in redox potential when approximately 2 normal amounts of each oxidizing agent are added.
（その２）
スリット幅１５〜１６０ルｍに段階的に設けた基本マス
クを用いて４２合金板（板厚Ｑ、１５ａｍ）に片面にの
み、各スリット幅のパターンを設けた。(Part 2) A pattern of each slit width was provided on only one side of a 42 alloy plate (plate thickness Q, 15 am) using a basic mask with stepwise slit widths of 15 to 160 lm.
このサンプルを老化してＯＲＰか５７５ｍＶ迄低下した
エツチング液に塩素酸ナトリウム（Ｎ ａ ＣＩ Ｏｆ
ｆ）を加えてＯＲＰを６０１ｍＶに」−１ｙさせたエツ
チング液てエツチングした。Sodium chlorate (N a CI Of
Etching was performed using an etching solution in which the ORP was adjusted to 601 mV by adding f) to -1y.
比較のため酸化剤を加えずにＯＲＰが
６０７ｍＶ迄低下したエツチング液でもエツチングした
。第２図はエツチング状況をボした断面図、ｌはレジス
ト、２は材料、ｄはエツチング深さ Ｓはサイトエウチ
量である。そして第２図に示す各パラメータ（ｄ、ｓ）
を測定し、エッチツマフタ（ｄ ／ ｓ ）を求めた。For comparison, etching was also carried out using an etching solution in which ORP was reduced to 607 mV without adding an oxidizing agent. FIG. 2 is a cross-sectional view showing the etching situation, where l is the resist, 2 is the material, d is the etching depth, and S is the site etching amount. And each parameter (d, s) shown in Figure 2
was measured to obtain the etch muff (d/s).
エッチファクタか大きい程サイトエッチｆ＃＜ｓ＞に比
べてエツチング深さ（ｄ）の割合か大きいことであり、
狭いピ・・・チに幅の広いパターンを設けることか出来
る。The larger the etch factor is, the larger the ratio of etching depth (d) is compared to the site etch f#<s>.
It is possible to provide a wide pattern on a narrow pitch.
第３図はスリット幅に対するエッチファクタの変化を示
す線図で、この図からエツチング液を本発明方法に基い
て再生しても酸化剤無添加浴に劣らずほぼ同様の高いエ
ッチファクタを示すことか判明した。FIG. 3 is a diagram showing the change in etch factor with respect to slit width, and it can be seen from this diagram that even if the etching solution is regenerated according to the method of the present invention, it shows almost the same high etch factor as the oxidizing agent-free bath. It turned out.
酸化剤を添加して再生し・たエツチング液か再度老化し
たら過早（通常は１〜２規定分）の酸化剤を加えるとＯ
ＲＰか］；昇しエツチング液は再生される。ｌｌｒ牛は
斂回繰り返してもよい。If the etching solution is regenerated by adding an oxidizing agent or aged again, adding too much oxidizing agent (usually 1 to 2 N) will cause O
RP]; The etching solution is regenerated. llr cows may be repeated diagonally.
［発明の効果］
本発明は１以上説明したように構成されているのて 以
下に記載されるような効果を奏する。[Effects of the Invention] Since the present invention is configured as described above, it produces the following effects.
従来は老化して酸化還元電位（ＯＲＰ）か低「し・たエ
ツチング液は廃棄処分にしていたか１本発明方法の提案
により繰り返し再生使用すればエツチング液の寿命か大
幅に延び、エツチング液のコストの低減に大きく寄手す
る。又塩素カス吹き込み法等の安全北危険な再生方法を
とらなくてもよく作業の安全確立に大きく貢献する。In the past, etching liquids that had aged and had a low oxidation-reduction potential (ORP) were disposed of as waste.1 If the method of the present invention is repeatedly recycled and used, the life of the etching liquid will be greatly extended, and the cost of etching liquids will be reduced. In addition, there is no need to use safe and dangerous regeneration methods such as chlorine sludge injection, which greatly contributes to the establishment of work safety.
第１図は各酸化剤を夫々約２規定分添加した場合の酸化
還元電位の変化を示した線区、第２図はエツチング状況
を示した断面図、第３図はスリット幅に対するエッチフ
ァクタの変化を示す線図である。
２ ・
ｄ ・
・レジスト
・材料
・エツチング深さ
・サイドエ・ンチ酸
第 １ 目
０ ２０ ３０ ４０ Ｓｏ
６０工ｙｌ”ン７”％（’？、７＋４２ｕＪ、Ｎｉ
（＄７Ｌ）第 ２１２１
ｓ’ｙイトエッ＋量Figure 1 is a line section showing changes in redox potential when approximately 2N of each oxidizing agent is added, Figure 2 is a cross-sectional view showing the etching situation, and Figure 3 is a graph showing the etch factor versus slit width. It is a line diagram showing a change. 2 ・ d ・ ・Resist・Material・Etching depth・Side etching acid 1st layer 0 20 30 40 So
60 engineering yl"n 7"% ('?, 7+42uJ, Ni
($7L) 2121st s'yitoe+ amount
Claims (1)
方法において、エッチング性能の低下を防止するため、
塩化第二鉄エッチング液に酸化剤（塩素酸ナトリウム、
次亜塩素酸ナトリウム、過マンガン酸カリウム、臭素酸
ナトリウム、次亜臭素酸ナトリウム等）を添加すること
を特徴とするエッチング液の再生方法。1. In the method of regenerating the etching solution used for photo-etching, in order to prevent deterioration of etching performance,
Oxidizing agent (sodium chlorate,
A method for regenerating an etching solution characterized by adding sodium hypochlorite, potassium permanganate, sodium bromate, sodium hypobromite, etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18061788A JPH0230776A (en) | 1988-07-20 | 1988-07-20 | Method for regenerating etching solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18061788A JPH0230776A (en) | 1988-07-20 | 1988-07-20 | Method for regenerating etching solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0230776A true JPH0230776A (en) | 1990-02-01 |
Family
ID=16086357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18061788A Pending JPH0230776A (en) | 1988-07-20 | 1988-07-20 | Method for regenerating etching solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0230776A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205701A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | A vapor deposition mask plate and a production method thereof |
-
1988
- 1988-07-20 JP JP18061788A patent/JPH0230776A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205701A (en) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | A vapor deposition mask plate and a production method thereof |
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