CN104505471A - Preparation method of high-opening-ratio mask board and mask board - Google Patents
Preparation method of high-opening-ratio mask board and mask board Download PDFInfo
- Publication number
- CN104505471A CN104505471A CN201410809458.1A CN201410809458A CN104505471A CN 104505471 A CN104505471 A CN 104505471A CN 201410809458 A CN201410809458 A CN 201410809458A CN 104505471 A CN104505471 A CN 104505471A
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- mask plate
- connecting bridge
- low polymer
- high aperture
- preparation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Electroluminescent Light Sources (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention provides a preparation method of a high-opening-ratio mask board. The preparation method comprises the following steps: step 1, coating a photo-curing material on the surface of the mask board; performing ultraviolet irradiation and curing on the photo-curing material in a mask board main body region and in a connecting bridge retention region to form a low polymer; washing and removing the uncured photo-curing material from the surface of a to-be-corroded region of a connecting bridge, then soaking the mask board of which the surface is coated with the low polymer into a corrosive solution to remove the to-be-corroded region of the connecting bridge so as to obtain the mask board of which the surface is coated with the low polymer; step 2, removing the low polymer from the surface of the mask board to obtain the high-opening-ratio mask board. By reducing the width of the connecting bridge of the mask board main body, the opening ratio of the mask board can be effectively increased and can be increased by 30% to 50% specifically.
Description
Technical field
The present invention relates to the technical field that a kind of organic electroluminescence device manufactures, specifically the mask plate for preparing of a kind of preparation method of mask plate of high aperture and method.
Background technology
As the display device of a new generation, the advantage that organic light emitting display and OLED have traditional monitor incomparable, as self-luminous, do not need backlight, ultra-thin display and Flexible Displays can be realized, driving voltage is low, power saving, reaction speed are fast etc., be widely used.
RGB juxtaposition method is a kind of basic skills that OLED realizes full-color display.R/G/B monochrome devices as sub-pixel, and is combined into a pixel and realizes full-color EL display by the method.The method takes full advantage of the high efficiency feature of OLED, and the screen body efficiency of making is high, low in energy consumption.When evaporation R/G/B sub-pixel, general employing fine mask plate FMM.
As described in Figure 1, the mask plate of prior art comprises mask plate body region 02, and mask plate main body connecting bridge 03 is distributed in the mask plate opening 01 between described mask plate body region 02 and mask plate main body connecting bridge 03.In FMM, adopt the mask plate of Invar (invar alloy) material with perforate to be bundled on stainless framework, the thickness of mask plate is generally between 40-50 micron.When evaporation R/G/B sub-pixel, by magnet, mask plate and substrates into intimate are fitted.But the method preparing perforate on the mask plate of Invar material can only be wet etching, and perforate is all very little, and the positioning accurate accuracy of wet etching is poor, easily causes the position of the perforate finally obtained to have relatively large deviation.Cause metal mask method FMM cannot realize the evaporation of high-resolution screen body, the highest resolution of the screen body that metal mask method FMM method prepares is 320PPI (number of pixels that Pixels Per Inch-per inch has) left and right.Therefore evaporation causes requiring more and more higher to evaporation mask plate to aperture opening ratio to the pursuit of high PPI in the industry at present.
Summary of the invention
For this reason, technical problem to be solved by this invention is that Invar of the prior art (invar alloy) mask plate aperture opening ratio is low and the position of perforate has the evaporation that relatively large deviation causes realizing high-resolution screen body, and then a kind of preparation method of high aperture mask plate is provided, the mask plate that the method prepares has higher aperture opening ratio.
For solving the problems of the technologies described above, technical scheme of the present invention is as follows:
A preparation method for high aperture mask plate, comprises the steps:
S1, at mask plate surface coating photo-curing material, and carry out ultraviolet radiation-curable to the photo-curing material of mask plate body region and connecting bridge reserved area and form low polymer, cleaning is removed and is connect bridge after the photo-curing material that corrosion region surface is not cured,
The mask plate that S2, the surface of being prepared by step S1 are coated with low polymer is immersed in corrosive solution to be got rid of connecting bridge and treats corrosion region, obtains the high aperture mask plate that surface is coated with low polymer;
S3: the low polymer removing mask plate surface, obtains high aperture mask plate.
In described step S1, described mask plate main body connecting bridge is divided into connecting bridge reserved area and treats corrosion region with the connecting bridge being arranged on both sides, described connecting bridge reserved area.
Described connecting bridge treats that the area of corrosion region is the 30%-50% of described connecting bridge reserved area area.
In described step S1, described low polymer is polyimides.
In described step S2, mask plate surface being coated with low polymer is immersed in the FeCl that concentration is 80-95%
3solution, is soak 30-300 under the condition of 70-100v to get rid of connecting bridge second and treat corrosion region at power-on voltage, obtains the high aperture mask plate that surface is coated with low polymer.
Described step S3 is: the mask plate being coated with low polymer is positioned in the solution of dimethylacetylamide and soaks 10-25 minute.
Described step S1 adopts organic solution cleaning removal to connect bridge and treats the photo-curing material that corrosion region surface is not cured.
The high aperture mask plate that said method prepares, comprises mask plate body region, for connecting the connecting bridge reserved area of described mask plate body region, is distributed in the mask plate opening between described mask plate body region and connecting bridge reserved area.
Technique scheme of the present invention has the following advantages compared to existing technology:
(1) preparation method of high aperture mask plate of the present invention is at mask plate surface coating photo-curing material, and ultraviolet radiation-curable formation low polymer is carried out to the photo-curing material of mask plate body region and connecting bridge reserved area, cleaning is removed and is connect bridge after the photo-curing material that corrosion region surface is not cured, again mask plate is immersed in and gets rid of connecting bridge in corrosive solution ferric chloride solution and treat corrosion region, and then remove the low polymer on mask plate surface, obtain high aperture mask plate.Compared with prior art, by reducing the width of mask plate main body connecting bridge, effectively can increase the aperture opening ratio of mask plate, aperture opening ratio specifically probably can be made to increase 30-50%.
(2) photo-curing material of the present invention forms the polyimides of low polymer degree after adopting ultraviolet light polymerization; it can effectively protect mask plate body region and connecting bridge reserved area to treat the integrality in corrosion region process in erosion removal connecting bridge, and can easily from the surface removal of mask plate when being positioned in the solution of dimethylacetylamide.
(3) the present invention adopts etchant solution to etch a part for connecting bridge, impact can not be had on the evenness of mask plate in the process increasing aperture opening ratio, and can ensure that mask plate aperture position deviation does not occur, and then ensure that the vapor deposition accuracy in follow-up use procedure.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of prior art mask plate;
Fig. 2 is the mask structure being schematic diagram after embodiment 1 completes S1 step;
Fig. 3 is high aperture mask plate prepared by the present invention;
Fig. 4 is the mask structure being schematic diagram after embodiment 2 completes S1 step;
Reference numeral is wherein: 01-mask plate opening, 02-mask plate body region, 03-mask plate main body connecting bridge, and 04-connecting bridge treats corrosion region, 05-connecting bridge reserved area.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.
Embodiment 1
As shown in Figures 2 and 3, the preparation method of a kind of high aperture mask plate that the present invention relates to, comprises the steps:
S1: at mask plate surface coating photo-curing material, and ultraviolet radiation-curable formation low polymer is carried out to the photo-curing material of mask plate body region 02 and connecting bridge reserved area 05, connect bridge with alcohol washes removal and treat the photo-curing material that corrosion region 04 surface is not cured;
S2: the mask plate that the surface of being prepared by step S1 is coated with low polymer is immersed in the FeCl that concentration is 80-95%
3solution, is soak 30-300 under the condition of 70-100v to get rid of connecting bridge second and treat corrosion region 04 at power-on voltage, obtains the mask plate that surface is coated with low polymer; Described low polymer is polyimides.
S3: the mask plate being coated with low polymer is positioned in the solution of dimethylacetylamide and soaks the low polymer that 15-25 minute removes mask plate surface, obtains high aperture mask plate.
Figure 3 shows that the high aperture mask plate that said method prepares, comprise mask plate body region 02, for connecting the connecting bridge reserved area 05 of described mask plate body region 02, be distributed in the mask plate opening 01 between described mask plate body region 02 and connecting bridge reserved area 05.Described mask plate is compared with common mask plate, and the area of the connecting bridge reserved area 05 of mask plate body region 02 is only the 50-70% of prior art connecting bridge 03 area, and aperture opening ratio obviously increases.Can be used for the display device that evaporation resolution is higher.Mask plate material of the present invention is Invar (invar alloy), is specially dilval material.
The photo-curing material used in the present invention is not particularly limited, only otherwise damaging effect of the present invention just can select arbitrarily.The organic compound of the low polymerization degree that they above can solidify at Invar (invar alloy) for any one.Among the organic compound of these low polymerization degrees, be polyimides (purchased from Jilin Gaoqi Polyimide Materials Co., Ltd) as preferred photo-curing material.
The corrosive solution used in the present invention is also not particularly limited, only otherwise damaging effect of the present invention just can select arbitrarily.They can corrode the solution of dilval material for any one.Among these solution, preferred concentration is the FeCl3 solution of 80-95%.
Embodiment 2
As shown in Figure 4, the preparation method of a kind of high aperture mask plate of the present invention, comprises the steps: another embodiment of the present invention
S1: at mask plate surface coating photo-curing material, and ultraviolet radiation-curable formation low polymer is carried out to the photo-curing material of mask plate body region 02 and connecting bridge reserved area 05, connect bridge with alcohol washes removal and treat the photo-curing material that corrosion region 04 surface is not cured;
The mask plate that S3, the surface of being prepared by step S2 are coated with low polymer is immersed in the FeCl that concentration is 80-95%
3solution, is soak 30-300 under the condition of 70-100v to get rid of connecting bridge second and treat corrosion region 04 at power-on voltage, obtains the mask plate that surface is coated with low polymer; Described low polymer is polyimides.
S4: the mask plate being coated with low polymer is positioned in the solution of dimethylacetylamide and soaks the low polymer that 20 minutes remove mask plate surface, obtains high aperture mask plate.
As transformable execution mode, described connecting bridge treats that corrosion region 04 also can be arranged on the downside of described connecting bridge reserved area 05.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (8)
1. a preparation method for high aperture mask plate, is characterized in that, comprises the steps:
S1: at mask plate surface coating photo-curing material, and ultraviolet radiation-curable formation low polymer is carried out to the photo-curing material of mask plate body region (02) and connecting bridge reserved area (05), cleaning removal connects bridge and treats the photo-curing material that corrosion region (04) surface is not cured;
The mask plate that S2, the surface of being prepared by step S1 are coated with low polymer is immersed in corrosive solution to be got rid of connecting bridge and treats corrosion region (04), obtains the high aperture mask plate that surface is coated with low polymer;
S3: the low polymer removing mask plate surface, obtains high aperture mask plate.
2. the preparation method of high aperture mask plate according to claim 1, is characterized in that:
In described step S1, the connecting bridge that described mask plate main body connecting bridge (03) is divided into connecting bridge reserved area (05) and is arranged on described connecting bridge reserved area (05) both sides treats corrosion region (04).
3. the preparation method of high aperture mask plate according to claim 1, is characterized in that: described connecting bridge treats that the area of corrosion region (04) is the 30%-50% of described connecting bridge reserved area (05) area.
4. the preparation method of high aperture mask plate according to claim 1, is characterized in that: in described step S1, described low polymer is polyimides.
5. the preparation method of high aperture mask plate according to claim 1, is characterized in that: in described step S2, mask plate surface being coated with low polymer is immersed in the FeCl that concentration is 80-95%
3solution, is soak 30-300 under the condition of 70-100v to get rid of connecting bridge second and treat corrosion region (04) at power-on voltage, obtains the high aperture mask plate that surface is coated with low polymer.
6. the preparation method of high aperture mask plate according to claim 1, is characterized in that: described step S3 is: the mask plate being coated with low polymer is positioned in the solution of dimethylacetylamide and soaks 10-25 minute.
7. the preparation method of high aperture mask plate according to claim 1, is characterized in that: described step S1 adopts organic solution cleaning removal to connect bridge and treats the photo-curing material that corrosion region (04) surface is not cured.
8. the high aperture mask plate for preparing of a claim 1-7 either method, it is characterized in that, comprise mask plate body region (02), for connecting the connecting bridge reserved area (05) of described mask plate body region (02), be distributed in the mask plate opening (01) between described mask plate body region (02) and connecting bridge reserved area (05).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410809458.1A CN104505471B (en) | 2014-12-22 | 2014-12-22 | A kind of preparation method and mask plate of high aperture mask plate |
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| CN201410809458.1A CN104505471B (en) | 2014-12-22 | 2014-12-22 | A kind of preparation method and mask plate of high aperture mask plate |
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| CN104505471A true CN104505471A (en) | 2015-04-08 |
| CN104505471B CN104505471B (en) | 2017-12-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111364002A (en) * | 2020-04-08 | 2020-07-03 | 山东奥莱电子科技有限公司 | Manufacturing method of fine metal mask plate suitable for high PPI |
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| Publication number | Publication date |
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| CN104505471B (en) | 2017-12-29 |
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