CN107689427B - OLED device and preparation method thereof - Google Patents
OLED device and preparation method thereof Download PDFInfo
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- CN107689427B CN107689427B CN201710071356.8A CN201710071356A CN107689427B CN 107689427 B CN107689427 B CN 107689427B CN 201710071356 A CN201710071356 A CN 201710071356A CN 107689427 B CN107689427 B CN 107689427B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Abstract
The invention discloses a kind of OLED device and preparation method thereof.The production method of the OLED device is when making ink storage layer, to each pixel, controls in the ink storage layer and the angle of the corresponding side wall of the long side of the pixel and the substrate is less than the angle of corresponding with the short side of the pixel side wall and the substrate.The production method of the OLED device, by way of making the ink storage layer of different angle to pixel long side and short side, correct as geometry it is uneven caused by the difference at contacts ink angle, rate of volatilization at uniform edge, and then the needle tying point that solves the problems, such as to form a film at short side it is excessively high caused by film forming unevenness.The production method improves into film uniformity, reduces production cost while improving OLED device yields on the basis of compatible existing equipment, can widely be used in printing OLED and show and manufactures with lighting engineering and printed electronics.
Description
Technical field
The present invention relates to electroluminescent technology fields, more particularly, to a kind of OLED device and preparation method thereof.
Background technique
With the gradually development of display technology, Organic Light Emitting Diode (OLED) device is because its excellent display performance obtains
To the concern of each side.The enterprises such as LG, Samsung and BOE are gradually increased its investment in OLED display technology.Conventional vapor deposition mode
Production OLED faces the problems such as stock utilization is low, to further decrease OLED screen curtain production cost, is made with mode of printing
OLED is also gradually put on research and development and production schedule by all big enterprises.
With mode of printing make OLED device when, generally require on TFT and ito glass make ink storage layer (Bank) with
Flowing of the limit ink material on substrate.Simultaneously in order to guarantee ink being uniformly distributed inside Bank, Bank is often taken
Hydrophobic material production, while side wall and bottom ito substrate form certain angle θ.As shown in Figure 1, in traditional common process,
Single pixel is strip and its Bank long side is identical with the θ of short side.When ink deposits in the Bank, due on long short side
Surface tension unbalance stress causes solution in the drying process in long side (contact angle θc-L) and short side (contact angle θc-W) Bank
The contact angle of upper formation is different, θc-L<θc-W, and then saturated vapour pressure above liquid is caused to generate difference.The difference meeting of vapour pressure
Further result in rate of volatilization difference, and the long side (concentration C in pixel slotL), short side (concentration CW) and central part (concentration CC)
Generate concentration difference, specific CC<CL<CW.Under the influence of various concentration, deposition velocity of the solute on short side is commonly greater than length
Side causes to generate needle tying point too early, causes to deposit film thickness at short side greater than long side, and then influence the uniformity of ink film forming.
Summary of the invention
Based on this, it is necessary to provide a kind of OLED device of uniformity and preparation method thereof of improvement ink film forming.
A kind of production method of OLED device, includes the following steps:
White space production thickness on the substrate for being equipped with patterned first electrode layer is greater than the first electrode layer
Ink storage layer side wall corresponding with the long side of the pixel and the substrate in the ink storage layer are controlled to each pixel
Angle be less than corresponding with the short side of the pixel side wall and the substrate angle；
Organic function layer is made in the first electrode layer；
The second electrode lay is made on the organic function layer.
Side wall corresponding with the short side of the pixel and the substrate in the ink storage layer in one of the embodiments,
Angle with the differential seat angle of side wall corresponding with the long side of the pixel and the angle of the substrate between 5 °~15 °.
Side wall corresponding with the short side of the pixel and the substrate in the ink storage layer in one of the embodiments,
Angle be not more than 10 ° with the differential seat angle of side wall corresponding with the long side of the pixel and the angle of the substrate.
The ink storage layer is hydrophobic photoresist in one of the embodiments,.
Side wall corresponding with the long side of the pixel and institute in the control ink storage layer in one of the embodiments,
It is by exposed program-controlled that the angle for stating substrate, which is less than side wall corresponding with the short side of the pixel and the angle of the substrate,
Light source processed moves to realize along the longitudinal direction of the pixel.
Side wall corresponding with the long side of the pixel and institute in the control ink storage layer in one of the embodiments,
It is by production mask plate that the angle for stating substrate, which is less than side wall corresponding with the short side of the pixel and the angle of the substrate,
When, the thickness that the region of the pixel long side is corresponded on mask plate is decreased below corresponding to the pixel short side
The thickness in region is realized.
The patterned first electrode layer is semiconductor conductive pattern layer in one of the embodiments,.
The semiconductor conductive pattern layer is patterned ITO layer in one of the embodiments,.
The organic function layer includes hole injection layer, hole transmission layer, electron transfer layer in one of the embodiments,
With at least one layer and luminescent layer in electron injecting layer.
A kind of OLED device, the production method for using OLED device described in any of the above-described embodiment make to obtain.
The production method of above-mentioned OLED device, the side of the ink storage layer by making different angle to pixel long side and short side
Formula, correct as geometry it is uneven caused by the difference at contacts ink angle, rate of volatilization at uniform edge, and then solve short side
Form a film uneven problem caused by place's film forming needle tying point is excessively high.The production method is improved on the basis of compatible existing equipment
Film uniformity reduces production cost while improving OLED device yields, can widely be used in printing OLED and show
In lighting engineering and printed electronics manufacture.
Detailed description of the invention
Fig. 1 is the part production process schematic diagram of traditional OLED device；
Fig. 2 is the part production process schematic diagram of the OLED device of an embodiment of the present invention.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough
Comprehensively.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the listed item of pass.
As shown in Fig. 2, the production method of the OLED device of an embodiment comprising following steps:
Step 1: the white space production thickness on the substrate for being equipped with patterned first electrode layer is greater than first electrode
The ink storage layer of layer.To each pixel, the angle of corresponding with the long side of the pixel side wall and substrate in ink storage layer is controlled
θLLess than the angle theta of corresponding with the short side of the pixel side wall and substrateW。
In the present embodiment, θW-θLBetween 5 °~15 °.Pixel for needle tying point difference greater than 1 μm is cheated, it is preferred that
θW-θLNo more than 10 °.
When ink is in distribution, under the influence of surface tension and gravity, the contact angle of formation at long side and short side
There is θc-L=θc-W。
Thus saturated vapor pressure (P at its long side and short side is further obtainedLAnd PW), long short side and central liquid subsolution
Concentration has: PL=PW, Cc<CL=CW。
Drop, which pricks height and film forming centre-height in liquid level edge pins, when dry (eL、eWAnd ec): eL=eW≥ec.Cause
And possessed preferably by the device that this method makes into film uniformity, it can be obviously improved device function layer film-forming type, and mention
The yields of high device.
The ink storage layer of present embodiment is hydrophobic photoresist.
The angle of side wall corresponding with the long side of the pixel and substrate is less than and the pixel in the control ink storage layer
The corresponding side wall of short side and the angle of substrate be to be moved by controlling light source in exposure process along the longitudinal direction of pixel
To realize；Either by the way that when making mask plate, the thickness that the region of pixel long side is corresponded on mask plate is reduced to
It is realized less than the thickness in the region for corresponding to pixel short side.
The patterned first electrode layer is semiconductor conductive pattern layer；Preferably patterned ITO layer.
Substrate can be TFT substrate or glass substrate etc..
Step 2: organic function layer is made in first electrode layer.
The organic function layer includes hole injection layer (HIL), hole transmission layer (HTL), electron transfer layer (ETL) and electricity
At least one layer and luminescent layer (EML) in sub- implanted layer (EIL).
Step 3: the second electrode lay is made on organic function layer.
The second electrode lay can be the metal or metal alloy layers such as Al, Ag.
Preferably, in the present embodiment, further include the steps that being packaged structural cover upper cover plate obtained above.
The production method of above-mentioned OLED device, the side of the ink storage layer by making different angle to pixel long side and short side
Formula, correct as geometry it is uneven caused by the difference at contacts ink angle, rate of volatilization at uniform edge, and then solve short side
Form a film uneven problem caused by place's film forming needle tying point is excessively high.The production method is improved on the basis of compatible existing equipment
Film uniformity reduces production cost while improving OLED device yields obtained, can widely be used in printing
OLED is shown to be manufactured with lighting engineering and printed electronics.
The following are specific embodiment parts.
The production method of the OLED device of the present embodiment specifically comprises the following steps, wherein having patterned anode layer
Substrate, organic function layer and cathode layer etc. can be made by conventional production method.
A) ito glass is formed to patterned anode layer after over etching；
B) dredging with a thickness of 1 μ m thick is made by spin coating or Slit mode on glass substrate and first electrode layer thereafter
Water ink storage layer (Bank) negative photoresist, and by dry drying.
C) it is exposed on negative photoresist with mask, is crosslinked illumination part.To make single pixel length
Different angle at side can make light source along length after device is completed tentatively to expose under area source, then through re-expose
It moves back and forth and realizes at side, or when making mask, region mask version thickness reduction (is routinely covered in pixel long edge position
Thickness can be fallen to the 15-20 microns of permeabilities to increase light in pixel long edge position with a thickness of 30 microns by template), with
Increase light by region, cross-linked polymer is promoted to be formed.
A length of 200 μm of single pixel region, width are 50 μm.
D) after the completion of exposing, unexposed area is washed with etching liquid, exposes ITO, and at long side and short side and ITO shape
At angle thetaLAnd θw: θL30 ° of ≈, θw≈35°。
E) deionized water clean the surface is used, and the dry 30min at 225 DEG C.
F) HIL layers are printed in pixel region by ink-jet printer, and be dried in a vacuum, drying time 5-
10min.In the drying process, ink forms contact angle θ at pixel long side and short side before forming needle tying pointc-L=θc-W。
After drying needle tying point with a thickness of when dry drop prick height and film forming centre-height e in liquid level edge pinsL、eWWith
ecMeet eL=eW≈ 600nm, ec≈500nm。
Thereafter 50 DEG C of baking 5min are carried out in vacuum drying oven.
G) it after having made HIL, then by HTL and EML layers of same mode of printing production, and is made by vapor deposition mode
ETL, EIL and cathode layer complete element manufacturing.
H) it covers glass cover-plate and completes device encapsulation.
Carried out by each pixel of the OLED device to above-mentioned production it has been observed that each pixel at film uniformity compared with
Well, the case where thickness at long side and short side is almost the same, and there is no the thickness that the thickness at short side is significantly greater than long edge position.Cause
And the OLED's made through the foregoing embodiment is good at film uniformity, homogeneity of product is high.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of production method of OLED device, which comprises the steps of:
White space production thickness on the substrate for being equipped with patterned first electrode layer is greater than the storage of the first electrode layer
Layer of ink controls the folder of corresponding with the long side of the pixel side wall and the substrate in the ink storage layer to each pixel
Angle is less than the angle of corresponding with the short side of the pixel side wall and the substrate；
Organic function layer is made in the first electrode layer；
The second electrode lay is made on the organic function layer.
2. the production method of OLED device as described in claim 1, which is characterized in that in the ink storage layer with the pixel
The corresponding side wall of short side and the substrate angle with corresponding with the long side of the pixel side wall and the substrate angle
Differential seat angle between 5 °~15 °.
3. the production method of OLED device as claimed in claim 2, which is characterized in that in the ink storage layer with the pixel
The corresponding side wall of short side and the substrate angle with corresponding with the long side of the pixel side wall and the substrate angle
Differential seat angle be not more than 10 °.
4. the production method of OLED device as described in claim 1, which is characterized in that the ink storage layer is hydrophobic photoetching
Glue.
5. the production method of OLED device as claimed in claim 4, which is characterized in that and should in the control ink storage layer
The angle of the corresponding side wall of the long side of pixel and the substrate is less than side wall corresponding with the short side of the pixel and the base
The angle of plate is realized by controlling light source in exposure process and moving along the longitudinal direction of the pixel.
6. the production method of OLED device as claimed in claim 4, which is characterized in that and should in the control ink storage layer
The angle of the corresponding side wall of the long side of pixel and the substrate is less than side wall corresponding with the short side of the pixel and the base
The angle of plate is by the way that when making mask plate, the thickness that the region of the pixel long side is corresponded on mask plate is reduced to
It is realized less than the thickness in the region for corresponding to the pixel short side.
7. such as the production method of OLED device according to any one of claims 1 to 6, which is characterized in that described patterned
First electrode layer is semiconductor conductive pattern layer.
8. the production method of OLED device as claimed in claim 7, which is characterized in that the semiconductor conductive pattern layer is figure
The ITO layer of case.
9. such as the production method of OLED device according to any one of claims 1 to 6, which is characterized in that the organic functions
Layer includes at least one layer and luminescent layer in hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer.
10. a kind of OLED device, which is characterized in that using the production such as OLED device according to any one of claims 1 to 9
Method makes to obtain.
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| CN108987452B (en) | 2018-08-24 | 2020-12-15 | 京东方科技集团股份有限公司 | Display substrate, preparation method of display substrate and display device |
| CN109585523B (en) | 2019-01-03 | 2021-04-09 | 京东方科技集团股份有限公司 | Manufacturing method of pixel defining layer and display panel |
| CN110071143B (en) * | 2019-04-04 | 2021-02-26 | 深圳市华星光电半导体显示技术有限公司 | Organic light emitting device and method of fabricating the same |
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| JP2005158494A (en) * | 2003-11-26 | 2005-06-16 | Seiko Epson Corp | Thin film forming method, manufacturing method of electrooptical device, electrooptical device and electronic equipment |
| JP4815761B2 (en) * | 2003-11-27 | 2011-11-16 | セイコーエプソン株式会社 | Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus |
| JP4888268B2 (en) * | 2007-07-23 | 2012-02-29 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| KR102457536B1 (en) * | 2015-06-30 | 2022-10-21 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| CN105576002A (en) * | 2015-12-14 | 2016-05-11 | Tcl集团股份有限公司 | Pixel unit, pixel structure and display device |
| CN105428554B (en) * | 2015-12-21 | 2018-02-13 | 广东聚华印刷显示技术有限公司 | One kind printing OLED and preparation method thereof |
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