CN104465337A - Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue - Google Patents
Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue Download PDFInfo
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- CN104465337A CN104465337A CN201410729054.1A CN201410729054A CN104465337A CN 104465337 A CN104465337 A CN 104465337A CN 201410729054 A CN201410729054 A CN 201410729054A CN 104465337 A CN104465337 A CN 104465337A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention belongs to the technical field of the semiconductor nanometer process, and particularly relates to a method for manufacturing a metal nanometer slit through PMMA/NEB double-layer glue. The method includes the steps that a semiconductor substrate is coated with PMMA positive photoresist in a spinning mode, the semiconductor substrate is coated with NEB negative photoresist in a spinning mode, lines are photoetched, the NEB negative photoresist is developed and imaged, the position of the slit is defined, the etching process is conducted, the PMMA positive photoresist is etched on the surface of the substrate, metal is deposited at the portion where the PMMA positive photoresist is etched away, the stripping process at the last step is conducted, and therefore the structure of the metal nanometer slit is formed. According to the method, accuracy and reliability are high, repeatability is good, the small line width can be achieved, after the metal evaporation process and the stripping process are conducted, the metal slit of 10 nanometers is acquired, efficiency and productivity are high by the utilization of the method, and the method has the wide application prospect in nanometer optical structure manufacture.
Description
Technical field
The invention belongs to semiconductor nano technology field, be specifically related to a kind of method using double-layer glue to make metal nano slit.
Background technology
Along with the development of microelectric technique, the characteristic size of integrated circuit constantly reduces, and chip device density constantly increases.The improvement demand of new nano preparation technique is also increasing.And stripping is the processing step of the establishment metallic pattern of a standard.Nano-scale figure is only by using electron beam lithography to make on positive photoresist in the past, particularly PMMA.
Also the application scenario needing negative photoresist is had, be mainly used for the situation that semiconductor substrate materials needs covering metal film, in this case, negative photoresist selects preferably in process, large-area exposure and very long photoetching time will be needed to cause difficulty inside technique because peel off positive photoresist.But, if only use negative photoresist can produce excessive undercutting degree (Undercut), make stripping more difficult.
In order to overcome above-mentioned difficulties, in order to overcome the shortcoming of positive photoresist and negative photoresist, advantage both simultaneously combining, is necessary that developing novel positive and negative double-tiered arch dam combination makes metal nano slit, overcomes the evolution that contemporary integrated circuits size reduces.
Summary of the invention
The object of the present invention is to provide and a kind ofly can obtain good undercutting degree (Undercut), and the method for the making metal nano slit of better peel results.
The method preparing metal nano slit provided by the invention, use the combination of PMMA/NEB double-tiered arch dam, concrete steps are as follows:
(1) select suitable semiconductor material as sample substrate, spin coating PMMA and NEB photoresist successively on substrate;
(2) electron beam lithography machine is used to carry out photoetching to NEB photoresist;
(3) the sample CD-26 developer solution through above-mentioned steps is developed to NEB photoresist, form bargraphs;
(4) use NEB photoresist to do barrier layer, etch PMMA photoresist with RIE, empty the PMMA photoresist do not covered under NEB photoresist region;
(5) use evaporation equipment in sample surfaces depositing metal, be deposited on the region after etching;
(6) utilize stripping technology to remove photoresist, described stripping technology is placed in organic solvent by the above-mentioned substrate completed to soak, and positivity PMMA photoresist is dissolved, and PMMA photoresist departs from substrate at sample surfaces, only leaves metal structure.
In such scheme, described in step (1) on substrate spin coating PMMA and NEB photoresist, the steps include: the PMMA glue of spin coating 50-150 nanometer thickness on substrate, and baking make it sclerosis, baking temperature is 150-200 DEG C, and the time is 40-60 minute; Then spin coating 150-300 nanometer thickness NEB photoresist again after, and front baking, pre-bake temperature is 90-120 DEG C, and the time is 2-3 minute;
In such scheme, carry out rear baking in step (2) to needing after sample photoetching, rear baking temperature is 110 DEG C, and the time is 2-3 minute.
In such scheme, when using developer solution CD-26 development in step (3), need be heated to 50 DEG C, developing time is 1-2 minute, uses deionized water to clean sample subsequently.
In such scheme, etch PMMA photoresist described in step (4) with RIE, process gas is fluoroform or oxygen.
In such scheme, step uses evaporation equipment depositing metal described in (5), and the steps include: the chromium of first deposit one deck 10-20 nanometer, as good adhesion layer, then a deposit gold, thickness is between 50-100 nanometer.
In such scheme, the organic solvent described in step (6) is acetone.
Beneficial effect:
As can be seen from technique scheme, this PMMA/NEB double-layer glue provided by the invention prepares the method for metallic slit, adopts the positive glue photoresist PMMA of lower floor and the negative glue NEB on upper strata, compared with other double-layer glue, mainly contains the advantage of following three aspects:
Use during the NEB photoresist photoetching of upper strata and only need the exposure dose using very little electron beam, and lower floor PMMA can not affect by shadow when low dose, so be independent and non-interfering to the operation of two kinds of glue when carrying out technique, accuracy is high and reliability is high, reproducible, have a wide range of applications in the preparation of nanocomposite optical structure;
The NEB photoresist very high to sensitivity is only needed to do electron beam lithography, so utilize the present invention to have very high efficiency and productive rate; When doing lower floor PMMA etching, due to the impact of horizontal proliferation, lower live width can be reached, after evaporated metal and stripping technology, the metallic slit of 10 nanometers can be reached.
Accompanying drawing explanation
Fig. 1 is whole processing step flow chart.
Fig. 2 is top plane view and the construction profile of the complete PMMA/NEB double-tiered arch dam of spin coating.
Fig. 3 to Fig. 6 is flow chart double-tiered arch dam being carried out to photoetching development etching series of steps.
Fig. 7 be metal nano narrow slit structure complete figure.
Number in the figure: 1 is Semiconductor substrate (silicon), 2 is Semiconductor substrate (silicon dioxide), and 3 is PMMA photoresist; 4 is NEB photoresist, and 5 is chromium, and 6 is gold.
Embodiment
Be to solve the bad stripping situation of negative photoresist main order of the present invention, a kind of PMMA/NEB double-tiered arch dam is used to combine, to obtain good undercutting degree (Undercut), obtain better peel results, below in conjunction with accompanying drawing and for embodiment, the present invention is described in detail.
First select a silicon chip, top growth thickness is that the silicon dioxide of 300 nanometers is used as sample substrate.
Spin coating one positive photoresist PMMA, the PMMA glue of spin coating 50 to 150 nanometer thickness, and baking makes it sclerosis, baking temperature is 180 DEG C, and the time is 60 minutes, in Fig. 1 shown in PMMA.
Spin coating one negative photoresist NEB, carries out front baking after thickness 150 to 300 nanometer, and temperature is 100 DEG C, and the time is 2 minutes.Carry out rear baking after photoetching, temperature is 110 DEG C, and the time is 2 minutes, in Fig. 1 shown in PMMA.
Afterwards as shown in Figure 2, use CD26 developer solution to develop, developer solution need heat 50 DEG C of developments, and developing time is 1 minute, uses deionized water to clean sample subsequently.
Use RIE equipment to etch sample, obtain the result of Fig. 3, wherein said RIE process gas comprises fluoroform or oxygen.
Use evaporation equipment depositing metal afterwards, the chromium of first deposit one deck 10 nanometer as a good adhesion layer, as Fig. 4, then deposit gold, thickness between 50 nanometers to 100 nanometers, as shown in Figure 5.
As shown in Figure 6, finally carry out stripping technique, with an organic solvent acetone Lai Shi lower floor photoresist PMMA peeling liner basal surface, leaves metal structure, forms metal nano slit.
In the present invention, electron beam lithography is used to carry out photoetching, use NEB as top layer and PMMA as bottom, the low exposure dose having gathered negative photoresist NEB is the good peel property of advantage and PMMA, being combined at PMMA/NEB double-tiered arch dam carries out in stripping process, under best etching situation, the undercutting degree (Undercut) of bottom PMMA by good control, can produce outstanding metal nano narrow slit structure after peeling off
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. use PMMA/NEB double-layer glue to make a method for metal nano slit, it is characterized in that concrete steps are as follows:
(1) select suitable semiconductor material as sample substrate, spin coating PMMA and NEB photoresist successively on substrate;
(2) electron beam lithography machine is used to carry out photoetching to NEB photoresist;
(3) the sample CD-26 developer solution through above-mentioned steps is developed to NEB photoresist, form bargraphs;
(4) use NEB photoresist to do barrier layer, etch PMMA photoresist with RIE, empty the PMMA photoresist do not covered under NEB photoresist region;
(5) use evaporation equipment in sample surfaces depositing metal, be deposited on the region after etching;
(6) utilize stripping technology to remove photoresist, described stripping technology is placed in organic solvent by the above-mentioned substrate completed to soak, and positivity PMMA photoresist is dissolved, and PMMA photoresist departs from substrate at sample surfaces, only leaves metal structure.
2. the method for making metal nano slit according to claim 1, to it is characterized in that described in step (1) spin coating PMMA and NEB photoresist on substrate, the steps include: the PMMA glue of spin coating 50-150 nanometer thickness on substrate, and baking makes it sclerosis, baking temperature is 150-200 DEG C, and the time is 40-60 minute; And then spin coating 150 nanometer-300 nanometer thickness NEB photoresist, and front baking, pre-bake temperature is 90-120 DEG C, and the time is 2-3 minute.
3. the method for making metal nano slit according to claim 1, it is characterized in that carrying out rear baking to after sample photoetching in step (2), rear baking temperature is 110 DEG C, and the time is 2-3 minute.
4. the method for making metal nano slit according to claim 1, when it is characterized in that using developer solution CD-26 development in step (3), need be heated to 50 DEG C, developing time is 1-2 minute, uses deionized water to clean sample subsequently.
5. the method for making metal nano slit according to claim 1, it is characterized in that etching PMMA photoresist with RIE described in step (4), process gas is fluoroform or oxygen.
6. the method for making metal nano slit according to claim 1, it is characterized in that using evaporation equipment depositing metal described in step (5), the steps include: the chromium of first deposit one deck 10-20 nanometer, as a good adhesion layer, then deposit gold, thickness is between 50-100 nanometer.
7. the method for making metal nano slit according to claim 1, is characterized in that the organic solvent described in step (6) is acetone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410729054.1A CN104465337A (en) | 2014-12-03 | 2014-12-03 | Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410729054.1A CN104465337A (en) | 2014-12-03 | 2014-12-03 | Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue |
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| CN104465337A true CN104465337A (en) | 2015-03-25 |
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| CN201410729054.1A Pending CN104465337A (en) | 2014-12-03 | 2014-12-03 | Method for manufacturing metal nanometer slit through PMMA/NEB double-layer glue |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206508A (en) * | 2015-08-24 | 2015-12-30 | 中国科学技术大学 | Preparation method of nanometer clearance and application thereof |
| CN108037636A (en) * | 2017-11-27 | 2018-05-15 | 江苏点晶光电科技有限公司 | A kind of production method of super diffraction limit nano graph |
| CN108062000A (en) * | 2017-11-01 | 2018-05-22 | 同济大学 | A kind of photonic crystal method for preparing scintillator based on double-tiered arch dam |
| CN110970147A (en) * | 2019-11-07 | 2020-04-07 | 复旦大学 | High-resolution hard X-ray tungsten/gold Fresnel zone plate and preparation method thereof |
| CN111710605A (en) * | 2020-06-19 | 2020-09-25 | 扬州国宇电子有限公司 | Method for stripping metal on semiconductor table top |
| JP2022043063A (en) * | 2018-11-02 | 2022-03-15 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシー | Aromatic underlayer |
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| JPS574127A (en) * | 1980-06-10 | 1982-01-09 | Fujitsu Ltd | Formation of conductor pattern |
| JPS6028237A (en) * | 1983-07-26 | 1985-02-13 | Sharp Corp | Manufacture of semiconductor device |
| JPS61129848A (en) * | 1984-11-29 | 1986-06-17 | Fujitsu Ltd | Manufacture of semiconductor device |
| CN101740359A (en) * | 2009-12-08 | 2010-06-16 | 四川虹视显示技术有限公司 | Nickel stripping method in method for manufacturing low-temperature polysilicon |
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2014
- 2014-12-03 CN CN201410729054.1A patent/CN104465337A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS574127A (en) * | 1980-06-10 | 1982-01-09 | Fujitsu Ltd | Formation of conductor pattern |
| JPS6028237A (en) * | 1983-07-26 | 1985-02-13 | Sharp Corp | Manufacture of semiconductor device |
| JPS61129848A (en) * | 1984-11-29 | 1986-06-17 | Fujitsu Ltd | Manufacture of semiconductor device |
| CN101740359A (en) * | 2009-12-08 | 2010-06-16 | 四川虹视显示技术有限公司 | Nickel stripping method in method for manufacturing low-temperature polysilicon |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206508A (en) * | 2015-08-24 | 2015-12-30 | 中国科学技术大学 | Preparation method of nanometer clearance and application thereof |
| CN108062000A (en) * | 2017-11-01 | 2018-05-22 | 同济大学 | A kind of photonic crystal method for preparing scintillator based on double-tiered arch dam |
| CN108062000B (en) * | 2017-11-01 | 2020-07-28 | 同济大学 | Preparation method of photonic crystal scintillator based on double-layer photoresist |
| CN108037636A (en) * | 2017-11-27 | 2018-05-15 | 江苏点晶光电科技有限公司 | A kind of production method of super diffraction limit nano graph |
| CN108037636B (en) * | 2017-11-27 | 2020-08-14 | 江苏点晶光电科技有限公司 | Method for manufacturing super-diffraction limit nano-pattern |
| JP2022043063A (en) * | 2018-11-02 | 2022-03-15 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシー | Aromatic underlayer |
| JP7386219B2 (en) | 2018-11-02 | 2023-11-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシー | aromatic lower layer |
| CN110970147A (en) * | 2019-11-07 | 2020-04-07 | 复旦大学 | High-resolution hard X-ray tungsten/gold Fresnel zone plate and preparation method thereof |
| CN110970147B (en) * | 2019-11-07 | 2022-11-18 | 复旦大学 | High-resolution hard X-ray tungsten/gold Fresnel zone plate and preparation method thereof |
| CN111710605A (en) * | 2020-06-19 | 2020-09-25 | 扬州国宇电子有限公司 | Method for stripping metal on semiconductor table top |
| CN111710605B (en) * | 2020-06-19 | 2021-02-19 | 扬州国宇电子有限公司 | Method for stripping metal on semiconductor table top |
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Application publication date: 20150325 |
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