CN103034049A - Method for manufacturing metal wire and array substrate - Google Patents
Method for manufacturing metal wire and array substrate Download PDFInfo
- Publication number
- CN103034049A CN103034049A CN2012105401112A CN201210540111A CN103034049A CN 103034049 A CN103034049 A CN 103034049A CN 2012105401112 A CN2012105401112 A CN 2012105401112A CN 201210540111 A CN201210540111 A CN 201210540111A CN 103034049 A CN103034049 A CN 103034049A
- Authority
- CN
- China
- Prior art keywords
- time
- exposure
- photoresist
- metal wire
- reserve area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
The embodiment of the invention discloses a method for manufacturing a metal wire and an array substrate, and relates to the field of liquid crystal display. According to the invention, the width of the metal wire can be reduced. The method for manufacturing the metal wire provided by the embodiment of the invention comprises the following steps: forming a metal layer; coating a photoresist layer on the metal layer; exposing the photoresist layer for the first time by a first mask to form a photoresist reserved area and a photoresist non-reserved area; and exposing the photoresist layer in the photoresist reserved area for the second time by the first mask, wherein a spacing value is preset between the first exposure and the second exposure in a staggered way.
Description
Technical field
The present invention relates to the method for making that field of liquid crystal display relates in particular to a kind of metal wire and array base palte.
Background technology
Along with people to the improving constantly of liquid crystal display quality requirements, high resolving power is a megatrend of liquid crystal display development.For product is promoted to more than the 300ppi from existing 200ppi, the live width of data line also needs to reduce gradually-and from being reduced to 2-3um more than the 4um, this also has higher requirement to production technology.
Traditional production technology generally adopts the control exposure imaging, and size and the etching size afterwards of the corresponding photoresist of metal wire obtain suitable metal wire live width afterwards, but because the resolution of exposure sources is conditional, so the size of the corresponding photoresist of metal wire can't further reduce after the exposure imaging, and then can't obtain the less metal wire of width.
Summary of the invention
Embodiments of the invention technical matters to be solved is to provide the method for making of a kind of metal wire and array base palte, can reduce the live width of metal wire, thereby improves the aperture opening ratio of liquid crystal display.
The application's one side provides a kind of method for making of metal wire, comprising:
Form metal level;
Apply photoresist layer at described metal level;
Use the first mask plate that described photoresist layer is carried out the exposure first time, form not reserve area of photoresist reserve area and photoresist;
Use described the first mask plate that the photoresist layer of described photoresist reserve area is carried out the exposure second time, the default distance values of dislocation between the described exposure first time and the described second time of the exposure.
Further, the default distance values of dislocation between the described exposure first time and the described second time of the exposure, along the described default distance values that misplaces perpendicular to the direction of described metal wire, so that only reduce described default distance values through the width of the photoresist reserve area that forms after for the first time exposure through the Width of the photoresist reserve area that forms after for the second time exposure.
Further, described metal level is that metal level, the corresponding zone of data line that described photoresist reserve area comprises follow-up formation and source electrode and the corresponding zone of drain electrode are leaked in the source.
Further, after the photoresist layer that uses described the first mask plate to described photoresist reserve area carries out the exposure second time, also comprise:
The photoresist layer that carries out after expose to the second time is carried out development treatment, and described source leakage metal level is carried out etching, form data line, source electrode and drain electrode.
Further, the width of described data line is 1.0～2.5um.
Further, described metal wire is public electrode wire or grid line.
The application also provides a kind of method for making of metal wire on the other hand, comprising:
Form metal level;
Apply photoresist layer at described metal level;
Use the first mask plate that described photoresist layer is carried out the exposure first time, form not reserve area of photoresist reserve area and photoresist;
Use the second mask plate that the photoresist layer of described photoresist reserve area is carried out the exposure second time, the default distance values of figure dislocation between described the first mask plate and described the second mask plate.
Further, described metal level is that metal level is leaked in the source, and the photoresist reserve area of the described exposure first time comprises the corresponding zone of data line and source electrode and the corresponding zone of drain electrode of follow-up formation; The photoresist reserve area of described second time of exposure comprise the corresponding zone of data line, source electrode and drain electrode of follow-up formation and source electrode and drain electrode to around extend the corresponding zone of predeterminable range so that described source electrode and the corresponding described photoresist layer of drain electrode width in exposing does not for the second time reduce.
Further, the default distance values of figure dislocation between described the first mask plate and described the second mask plate, along the described default distance values that misplaces perpendicular to the direction of metal wire, so that only reduce described default distance values through the width of the photoresist reserve area that forms after for the first time exposure through the Width of the photoresist reserve area that forms after for the second time exposure.
Further, after the photoresist layer that uses described the second mask plate to described photoresist reserve area carries out the exposure second time, also comprise:
The photoresist layer that carries out after expose to the second time is carried out development treatment, and described source leakage metal level is carried out etching, form data line, source electrode and drain electrode.
Further, the width of described data line is 1.0～2.5um.
Further, described metal wire is public electrode wire or grid line.
The application's again one side also provides a kind of method for making of array base palte, comprises the method for making of above-mentioned each described metal wire.
The metal wire of the embodiment of the invention and the method for making of array base palte, by the photoresist layer that applies on the metal level is double exposed, and for the first time exposure and the default distance values that misplaces between the exposure for the second time, so that the width of the photoresist reserve area of photoresist layer can further reduce default distance values, and then so that the width of the metal wire that forms further reduces, improved the aperture opening ratio of liquid crystal display.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is one of schematic flow sheet of metal wire method for making in the embodiment of the invention;
Fig. 2 is the synoptic diagram that exposes and misplace between the exposure for the second time for the first time in the embodiment of the invention;
Fig. 3 is one of structural representation of array base palte in the metal wire manufacturing process in the embodiment of the invention;
Fig. 4 is in the embodiment of the invention in the metal wire manufacturing process two of the structural representation of array base palte;
Fig. 5 is in the embodiment of the invention in the metal wire manufacturing process three of the structural representation of array base palte;
Fig. 6 is in the embodiment of the invention in the metal wire manufacturing process four of the structural representation of array base palte;
Fig. 7 is in the embodiment of the invention in the metal wire manufacturing process five of the structural representation of array base palte;
Fig. 8 figure be metal wire method for making in the embodiment of the invention schematic flow sheet two.
Embodiment
The embodiment of the invention provides the method for making of a kind of metal wire and array base palte, can reduce the live width of metal wire, thereby improves the aperture opening ratio of liquid crystal display.
In below describing, in order to illustrate rather than in order limiting, to have proposed the detail such as particular system structure, interface, technology, understand the present invention in order to thoroughly cut.Yet, not it will be clear to one skilled in the art that in having other embodiment of these details and can realize the present invention yet.In other situation, omit the detailed description to well-known device, circuit and method, in order to avoid unnecessary details hinders description of the invention.
Embodiment one
Present embodiment provides a kind of method for making of metal wire, and as shown in Figure 1, the method comprises:
Step 101, formation metal level;
At first need to prove, the method for making of the metal wire of present embodiment is the part of the manufacturing process of array base palte, method for making about other parts of array base palte, such as public electrode, pixel electrode, the isostructural method for making of grid line, not outline of the present invention, so be not described in detail at this.
Metal wire in the present embodiment can be data line, also can be public electrode wire, grid line etc.The below elaborates to method of the present invention with the example that is made as of data line.
When needs are made data line, as one embodiment of the present invention, the metal level of required formation can be that metal level 1 is leaked in the source, and as shown in Figure 3, the source is leaked metal level 1 and is formed on the insulation course 3, concrete, this insulation course 3 can be gate insulator, in addition, and when the layer structure of array base palte changes, the source is leaked metal level 1 and also can be formed on as required on other layers structure, and the present invention is not construed as limiting at this.
In addition, when the metal wire of needs making was public electrode wire, grid line, this metal level can be the grid metal level.
Step 102, apply photoresist layer at described metal level;
As shown in Figure 3, after metal level 1 is leaked in the formation source, leak again metal level 1 in this source and apply one deck photoresist layer 2.
Step 103, use the first mask plate carry out the exposure first time to described photoresist layer, form photoresist not reserve area and photoresist reserve area;
As shown in Figure 4, use the first mask plate that photoresist layer 2 is carried out the exposure first time, form photoresist not reserve area 21 and photoresist reserve area 22, wherein, photoresist reserve area 22 comprises the corresponding zone of the data line of follow-up formation and source electrode and the corresponding zone of drain electrode.For instance, the resolution of exposure sources is 4um, and then the width minimum of photoresist reserve area 22 can be 4um, and namely the width in the corresponding zone of data line is 4um.
Step 104, described the first mask plate of use carry out the exposure second time to the photoresist layer of described photoresist reserve area, and distance values is preset in dislocation between the described exposure first time and the described second time of the exposure.
As shown in Figure 2, solid line is depicted as the figure of the first mask plate in for the first time exposure among the figure, after photoresist layer 2 being carried out the exposure first time, photoresist reserve area 22 after continuing to use the first mask plate to for the first time exposure carries out the exposure second time, produce the second photoresist not reserve area 23 and the second photoresist reserve area 24, as shown in Figure 5, the second photoresist not reserve area 23 in for the first time exposure, be not exposed but be exposed in the exposure for the second time; The second photoresist reserve area 24 all is not exposed in double exposure.Fig. 5 is that Fig. 2 is along the sectional view of A-A ' direction, dotted line is depicted as the figure of the first mask plate in for the second time exposure among Fig. 2, wherein, for the first time exposure and the default distance values that misplaces between the exposure for the second time, for instance, when default distance values is 1um, then expose for the first time with the position of the exposure second time on photoresist layer at a distance of 1um.
For accurately for the first time exposure of location and for the second time position of exposure, present embodiment can be made two cover alignment marks at the first mask plate, the double exposure technique in respectively with substrate on alignment mark carry out contraposition, and the distance between the two cover alignment marks is set to for the first time exposure and the default distance values of the dislocation of the exposure second time on the mask plate, such as the top described 1um that gives an example, use like this a mask plate just can carry out twice different exposure, saved cost of manufacture.
As one embodiment of the present invention, as shown in Figure 2, distance values is preset in dislocation between the exposure of exposure and the described second time for the first time, along the described default distance values that misplaces perpendicular to the direction of metal wire, so that the width of the data line that the Width of the metal wire that forms afterwards through exposing for the second time only forms afterwards through exposing for the first time reduces described default distance values, namely the figure of exposure moves default distance values with respect to the figure that exposes the first time along the x direction of principal axis for the second time.For instance, when default distance values was 1um, for the second time the width of metal wire institute corresponding region was 3um after the exposure, and this just means that also the metal wire of final formation compares with only carrying out the data line that for the first time exposure forms, and width has reduced 1um.
Further, present embodiment also comprises after the photoresist layer that uses described the first mask plate to described photoresist reserve area carries out the exposure second time:
The photoresist layer that carries out after expose to the second time is carried out development treatment, and described source leakage metal level is carried out etching, form data line, source electrode and drain electrode.
As shown in Figure 6, after carrying out development treatment, photoresist not reserve area 21 and the second photoresist or not of reserve area 23 be removed, expose the source and leak metal level 1; The photoresist of the second photoresist reserve area 24 still exists, and leaks metal level 1 for the protection of the source of its below and is not etched.In etching process, reserve area 21 and the second photoresist do not leak metal level can not be etched away in the source of reserve area 23 except photoresist, the source at the edge of the second photoresist reserve area 24 is leaked metal level and also can be etched, that is to say, the width of the final data line 10 that forms is less than the width of the second photoresist reserve area 24, generally speaking, when the width of the second photoresist reserve area 24 is 3um, by the control etching time, the width of the final data line 10 that forms is 1.0～2.5um.
The method for making of the data line of present embodiment, by being leaked the photoresist layer that applies on the metal level, the source double exposes, and for the first time exposure and the default distance values that misplaces between the exposure for the second time, so that the width of the photoresist reserve area of photoresist layer can further reduce default distance values, and then so that the width of the data line that forms further reduce.
Embodiment two
Present embodiment provides a kind of method for making of data line, and as shown in Figure 8, the method comprises:
Metal wire in the present embodiment can be data line, also can be public electrode wire, grid line etc.The below elaborates to method of the present invention with the example that is made as of data line.
When needs are made data line, as one embodiment of the present invention, the source is leaked metal level and is formed on the insulation course, concrete, this insulation course can be gate insulator, in addition, and when the layer structure of array base palte changes, the source is leaked metal level and also can be formed on as required on other layers structure, and the present invention is not construed as limiting at this.
In addition, when the metal wire of needs making was public electrode wire, grid line, this metal level can be the grid metal level.
After metal level is leaked in the formation source, leak metal level in this source again and apply one deck photoresist layer.
After the photoresist layer coating is finished, use the first mask plate that this photoresist layer is carried out the exposure first time, form photoresist not reserve area and photoresist reserve area, wherein, the photoresist reserve area comprises the corresponding zone of the data line of follow-up formation and source electrode and the corresponding zone of drain electrode.For instance, the resolution of exposure sources is 4um, and then the width minimum of photoresist reserve area can be 4um, and namely the width in the corresponding zone of data line is 4um.
Different from embodiment one is, adopt the second mask plate that photoresist layer is carried out the exposure second time in the present embodiment, form the second photoresist not reserve area and the second photoresist reserve area, the figure of the second mask plate is different from the figure of the first mask plate, as one embodiment of the present invention, the second photoresist reserve area of exposure comprises the corresponding zone of data line of follow-up formation for the second time, source electrode and drain electrode corresponding zone and source electrode and drain electrode to around extend the corresponding zone of predeterminable range so that the corresponding photoresist layer of source electrode and drain electrode width in exposing does not for the second time reduce.
As one embodiment of the present invention, the default distance values of figure dislocation between the first mask plate and described the second mask plate, along the described default distance values that misplaces perpendicular to the direction of metal wire, so that only reduce described default distance values through the width of the data line that forms after for the first time exposure through the Width of the metal wire that forms after for the second time exposure.
For instance, the default distance values of the figure dislocation between the first mask plate and the second mask plate is 1um, then source electrode and drain electrode are not less than 1um to the predeterminable range that extends all around, like this, even the second mask plate has moved 1um with respect to the first mask plate, the formed figure that exposes final source electrode, drain electrode and the channel region that forms or the first time, its size and width do not change, after for the second time exposure, only have the width of metal wire institute corresponding region that change has occured.
Further, present embodiment also comprises after the photoresist layer that uses described the second mask plate to described photoresist reserve area carries out the exposure second time:
The photoresist layer that carries out after expose to the second time is carried out development treatment, and described source leakage metal level is carried out etching, form data line, source electrode and drain electrode.
After carrying out development treatment, photoresist not reserve area and the second photoresist or not of reserve area be removed, expose the source and leak metal level; The photoresist of the second photoresist reserve area still exists, and leaks metal level for the protection of the source of its below and is not etched.In etching process, reserve area and the second photoresist do not leak metal level can not be etched away in the source of reserve area except photoresist, the source at the edge of the second photoresist reserve area is leaked metal level and also can be etched, that is to say, the width of the final data line that forms is less than the width of the second photoresist reserve area, generally speaking, and when the width of photoresist reserve area is 3um, by the control etching time, the width of the final data line 10 that forms is 1.0～2.5um.
The method for making of the metal wire of present embodiment, by being leaked the photoresist layer that applies on the metal level, the source double exposes, and for the first time exposure and the default distance values that misplaces between the exposure for the second time, so that the width of the photoresist reserve area of photoresist layer can further reduce default distance values, and then so that the width of the metal wire that forms further reduce.
Present embodiment also provides a kind of production method of array base palte, the method for making that comprises the metal wire of embodiment one or embodiment two, the method for making of metal wire is the part of the manufacturing process of array base palte, method for making about other parts of array base palte, such as public electrode, pixel electrode, the isostructural method for making of grid line, those skilled in the art can be known according to prior art, so be not described in detail at this.
The above; be the specific embodiment of the present invention only, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (13)
1. the method for making of a metal wire is characterized in that, comprising:
Form metal level;
Apply photoresist layer at described metal level;
Use the first mask plate that described photoresist layer is carried out the exposure first time, form not reserve area of photoresist reserve area and photoresist;
Use described the first mask plate that the photoresist layer of described photoresist reserve area is carried out the exposure second time, the default distance values of dislocation between the described exposure first time and the described second time of the exposure.
2. the method for making of metal wire according to claim 1, it is characterized in that, the default distance values of dislocation between the described exposure first time and the described second time of the exposure, along the described default distance values that misplaces perpendicular to the direction of described metal wire, so that only reduce described default distance values through the width of the photoresist reserve area that forms after for the first time exposure through the Width of the photoresist reserve area that forms after for the second time exposure.
3. the method for making of metal wire according to claim 1 and 2 is characterized in that, described metal level is that metal level, the corresponding zone of data line that described photoresist reserve area comprises follow-up formation and source electrode and the corresponding zone of drain electrode are leaked in the source.
4. the method for making of metal wire according to claim 3 is characterized in that, after the photoresist layer that uses described the first mask plate to described photoresist reserve area carries out the exposure second time, also comprises:
The photoresist layer that carries out after expose to the second time is carried out development treatment, and described source leakage metal level is carried out etching, form data line, source electrode and drain electrode.
5. the method for making of metal wire according to claim 4 is characterized in that, the width of described data line is 1.0～2.5um.
6. the method for making of metal wire according to claim 1 and 2 is characterized in that, described metal wire is public electrode wire or grid line.
7. the method for making of a metal wire is characterized in that, comprising:
Form metal level;
Apply photoresist layer at described metal level;
Use the first mask plate that described photoresist layer is carried out the exposure first time, form not reserve area of photoresist reserve area and photoresist;
Use the second mask plate that the photoresist layer of described photoresist reserve area is carried out the exposure second time, the default distance values of figure dislocation between described the first mask plate and described the second mask plate.
8. the method for making of metal wire according to claim 7, it is characterized in that, described metal level is that metal level is leaked in the source, and the photoresist reserve area of the described exposure first time comprises the corresponding zone of data line and source electrode and the corresponding zone of drain electrode of follow-up formation; The photoresist reserve area of described second time of exposure comprise the corresponding zone of data line, source electrode and drain electrode of follow-up formation and source electrode and drain electrode to around extend the corresponding zone of predeterminable range so that described source electrode and the corresponding described photoresist layer of drain electrode width in exposing does not for the second time reduce.
9. the method for making of metal wire according to claim 7, it is characterized in that, the default distance values of figure dislocation between described the first mask plate and described the second mask plate, along the described default distance values that misplaces perpendicular to the direction of metal wire, so that only reduce described default distance values through the width of the photoresist reserve area that forms after for the first time exposure through the Width of the photoresist reserve area that forms after for the second time exposure.
10. the method for making of metal wire according to claim 7 is characterized in that, after the photoresist layer that uses described the second mask plate to described photoresist reserve area carries out the exposure second time, also comprises:
The photoresist layer that carries out after expose to the second time is carried out development treatment, and described source leakage metal level is carried out etching, form data line, source electrode and drain electrode.
11. the method for making of metal wire according to claim 10 is characterized in that, the width of described data line is 1.0～2.5um.
12. the method for making of metal wire according to claim 7 is characterized in that, described metal wire is public electrode wire or grid line.
13. the method for making of an array base palte is characterized in that, comprises the method for making of each described metal wire of claim 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105401112A CN103034049A (en) | 2012-12-13 | 2012-12-13 | Method for manufacturing metal wire and array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105401112A CN103034049A (en) | 2012-12-13 | 2012-12-13 | Method for manufacturing metal wire and array substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103034049A true CN103034049A (en) | 2013-04-10 |
Family
ID=48021067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105401112A Pending CN103034049A (en) | 2012-12-13 | 2012-12-13 | Method for manufacturing metal wire and array substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103034049A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104375387A (en) * | 2013-08-16 | 2015-02-25 | 奥斯兰姆奥普托半导体有限责任公司 | Photolithographic methods of producing structures in radiation-emitting semiconductor components |
| CN104460244A (en) * | 2013-12-30 | 2015-03-25 | 苏州矩阵光电有限公司 | Process for assisting integrated optical production by utilizing double exposure technology |
| CN104992952A (en) * | 2015-06-29 | 2015-10-21 | 合肥京东方光电科技有限公司 | Array substrate and preparation method therefor |
| CN105491796A (en) * | 2014-10-08 | 2016-04-13 | 宏启胜精密电子(秦皇岛)有限公司 | Manufacturing method of circuit board |
| CN106019694A (en) * | 2016-08-02 | 2016-10-12 | 武汉华星光电技术有限公司 | Color filter, LCD panel, LCD and color filter forming method |
| CN106371294A (en) * | 2016-12-01 | 2017-02-01 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN107219579A (en) * | 2017-07-10 | 2017-09-29 | 扬州大学 | The groove-shaped cycle grating array preparation method of multiple frequence |
| CN107356997A (en) * | 2017-07-10 | 2017-11-17 | 扬州大学 | Multiple frequence grizzly bar type cycle grating array preparation method |
| CN107785308A (en) * | 2017-10-27 | 2018-03-09 | 合肥鑫晟光电科技有限公司 | The preparation method and array base palte of a kind of array base palte |
| CN113791702A (en) * | 2021-08-11 | 2021-12-14 | 深圳市志凌伟业光电有限公司 | Manufacturing device and manufacturing method of electrode structure and touch panel |
| WO2022246836A1 (en) * | 2021-05-28 | 2022-12-01 | 京东方科技集团股份有限公司 | Metal wire and fabrication method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1118936A (en) * | 1994-07-14 | 1996-03-20 | 现代电子产业株式会社 | Method for forming submicroscopic patterns |
| WO2008136155A1 (en) * | 2007-04-20 | 2008-11-13 | Sharp Kabushiki Kaisha | Liquid crystal display device manufacturing method, and liquid crystal display device |
| CN201974631U (en) * | 2011-04-12 | 2011-09-14 | 京东方科技集团股份有限公司 | Mask plate and mask plate group |
| CN102650819A (en) * | 2011-08-03 | 2012-08-29 | 京东方科技集团股份有限公司 | Photo mask and positioning method of photo mask |
| CN102768990A (en) * | 2012-07-27 | 2012-11-07 | 京东方科技集团股份有限公司 | Array substrate, and manufacturing method and display device of array substrate |
-
2012
- 2012-12-13 CN CN2012105401112A patent/CN103034049A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1118936A (en) * | 1994-07-14 | 1996-03-20 | 现代电子产业株式会社 | Method for forming submicroscopic patterns |
| WO2008136155A1 (en) * | 2007-04-20 | 2008-11-13 | Sharp Kabushiki Kaisha | Liquid crystal display device manufacturing method, and liquid crystal display device |
| CN201974631U (en) * | 2011-04-12 | 2011-09-14 | 京东方科技集团股份有限公司 | Mask plate and mask plate group |
| CN102650819A (en) * | 2011-08-03 | 2012-08-29 | 京东方科技集团股份有限公司 | Photo mask and positioning method of photo mask |
| CN102768990A (en) * | 2012-07-27 | 2012-11-07 | 京东方科技集团股份有限公司 | Array substrate, and manufacturing method and display device of array substrate |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104375387A (en) * | 2013-08-16 | 2015-02-25 | 奥斯兰姆奥普托半导体有限责任公司 | Photolithographic methods of producing structures in radiation-emitting semiconductor components |
| CN104375387B (en) * | 2013-08-16 | 2019-03-08 | 奥斯兰姆奥普托半导体有限责任公司 | For manufacturing the photolithography method of structure in the semiconductor devices of transmitting radiation |
| US9466487B2 (en) | 2013-08-16 | 2016-10-11 | Osram Opto Semiconductors Gmbh | Photolithographic methods of producing structures in radiation-emitting semiconductor components |
| CN104460244A (en) * | 2013-12-30 | 2015-03-25 | 苏州矩阵光电有限公司 | Process for assisting integrated optical production by utilizing double exposure technology |
| CN105491796A (en) * | 2014-10-08 | 2016-04-13 | 宏启胜精密电子(秦皇岛)有限公司 | Manufacturing method of circuit board |
| CN105491796B (en) * | 2014-10-08 | 2019-02-22 | 深圳市昶东鑫线路板有限公司 | The production method of circuit board |
| US10204932B2 (en) | 2015-06-29 | 2019-02-12 | Boe Technology Group Co., Ltd. | Array substrate, manufacturing method thereof, display panel and display device |
| WO2017000431A1 (en) * | 2015-06-29 | 2017-01-05 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, display panel, and display device |
| CN104992952A (en) * | 2015-06-29 | 2015-10-21 | 合肥京东方光电科技有限公司 | Array substrate and preparation method therefor |
| CN106019694A (en) * | 2016-08-02 | 2016-10-12 | 武汉华星光电技术有限公司 | Color filter, LCD panel, LCD and color filter forming method |
| CN106371294A (en) * | 2016-12-01 | 2017-02-01 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN106371294B (en) * | 2016-12-01 | 2018-10-26 | 京东方科技集团股份有限公司 | A kind of production method of display base plate, display base plate and display device |
| CN107219579A (en) * | 2017-07-10 | 2017-09-29 | 扬州大学 | The groove-shaped cycle grating array preparation method of multiple frequence |
| CN107356997A (en) * | 2017-07-10 | 2017-11-17 | 扬州大学 | Multiple frequence grizzly bar type cycle grating array preparation method |
| CN107785308A (en) * | 2017-10-27 | 2018-03-09 | 合肥鑫晟光电科技有限公司 | The preparation method and array base palte of a kind of array base palte |
| WO2022246836A1 (en) * | 2021-05-28 | 2022-12-01 | 京东方科技集团股份有限公司 | Metal wire and fabrication method therefor |
| CN113791702A (en) * | 2021-08-11 | 2021-12-14 | 深圳市志凌伟业光电有限公司 | Manufacturing device and manufacturing method of electrode structure and touch panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103034049A (en) | Method for manufacturing metal wire and array substrate | |
| US20180046045A1 (en) | Array substrate, manufacturing method thereof, and display panel | |
| CN102148259A (en) | Thin film transistor, array substrate and manufacturing methods thereof and liquid crystal display | |
| CN104022078B (en) | A kind of preparation method of array base palte | |
| CN105892221B (en) | The production method of half-tone mask plate and TFT substrate | |
| CN103855087A (en) | Array substrate, manufacturing method of array substrate and display device | |
| CN104062794A (en) | Mask plate, manufacturing method of ultraviolet mask plate and manufacturing method of array substrate | |
| JP4959631B2 (en) | Grayscale mask | |
| CN103325732A (en) | COA substrate and manufacturing method and display device of COA substrate | |
| CN104576523A (en) | Array substrate, production method of array substrate and display device | |
| CN103646852A (en) | Manufacturing method of substrate | |
| CN106024808A (en) | Array substrate and preparation method therefor, and display device | |
| US20170373057A1 (en) | Array substrate and manufacturing method for the same | |
| CN104157696A (en) | Thin film transistor and preparation method thereof, as well as array baseplate and liquid crystal display device | |
| CN107086181A (en) | Thin film transistor (TFT) and preparation method thereof, array base palte and display | |
| CN103021944A (en) | TFT (thin-film transistor) array substrate, manufacturing method of TFT array substrate, and display device with TFT array substrate | |
| CN103424925B (en) | A kind of array base palte and manufacture method, display device | |
| CN102790056B (en) | Array substrate, manufacturing method of array substrate, manufacturing method of GOA unit and display device | |
| CN104810321A (en) | Production method of TFT (thin film transistor) array substrate and display device | |
| CN105489502B (en) | The manufacture method of thin-film transistor structure | |
| CN102629588A (en) | Method for manufacturing array substrate | |
| CN102655116B (en) | Manufacturing method for array substrate | |
| CN102723310A (en) | Array substrate manufacturing method, array substrate and liquid crystal display device | |
| CN103487982A (en) | Display device, array substrate, pixel structure and manufacturing method | |
| CN109343304B (en) | Manufacturing method of photomask and display panel for manufacturing active switch |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130410 |