JP2003347184A - Exposure method, exposure device, and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure method, an exposure device, and a device manufacturing method, which are capable of shortening an alignment time as keeping alignment high in accuracy so as to improve productivity. <P>SOLUTION: The exposure device EX is of a scanning type which projects the image of a pattern on a mask M on an photosensitive substrate P for exposure as the mask M and the photosensitive substrate P are synchronously moved in the direction of an X axis. The exposure device EX is equipped with a plurality of alignment systems AL1 to AL6 for detecting a plurality of alignment marks m1 to m6 provided at a plurality of positions on the photosensitive substrate P respectively. At least three from among the alignment systems AL1 to AL6 are arranged in an array in the direction of a Y axis. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an exposure method and an exposure apparatus for exposing a pattern of a mask onto a substrate while moving the mask and the substrate synchronously, and a device manufacturing method.

[0002]

2. Description of the Related Art Liquid crystal display devices and semiconductor devices are:
It is manufactured by a so-called photolithography technique in which a pattern formed on a mask is transferred onto a photosensitive substrate. The exposure apparatus used in this photolithography process has a substrate stage on which a photosensitive substrate is mounted and moves two-dimensionally and a mask stage on which a mask having a pattern is mounted and moves two-dimensionally, and is formed on a mask. The transferred pattern is transferred to the photosensitive substrate via the projection optical system while sequentially moving the mask stage and the substrate stage. The exposure device includes a batch exposure device that simultaneously transfers the entire mask pattern onto the photosensitive substrate, and a scanning exposure device that continuously transfers the mask pattern onto the photosensitive substrate while synchronously scanning the mask stage and the substrate stage. Two types of devices are mainly known. Among them, when manufacturing a liquid crystal display device, a scanning exposure apparatus is mainly used due to a demand for a large display area.

In a scanning exposure apparatus, a plurality of projection optical systems are arranged such that adjacent projection areas are displaced by a predetermined amount in the scanning direction, and ends (joints) of adjacent projection areas are orthogonal to the scanning direction. There is a so-called multi-lens type scanning exposure apparatus (multi-lens scanning exposure apparatus) which is arranged so as to overlap in the direction in which the scanning is performed. The multi-lens scanning exposure apparatus can obtain a large exposure area (pattern forming area) without increasing the size of the apparatus while maintaining good imaging characteristics. The field stop of each projection optical system in the scanning type exposure apparatus has, for example, a trapezoidal shape, and is set so that the total aperture width of the field stop in the scanning direction is always equal. Therefore, since the joints of the adjacent projection optical systems are exposed in an overlapping manner, the scanning type exposure apparatus has an advantage that the optical aberration and the exposure illuminance of the projection optical system change smoothly.

FIG. 21 is a view showing an example of a conventional multi-lens scan type exposure apparatus. As shown in FIG.
The exposure apparatus EXJ includes a mask stage MST supporting a mask M and a substrate stage PST supporting a photosensitive substrate P.
An illumination optical system IL for illuminating the mask M supported by the mask stage MST with the exposure light EL, and an image of the pattern of the mask M illuminated by the exposure light EL on the substrate stage PS
A plurality of projection optical systems PLa to PLg for projecting on the photosensitive substrate P supported by T are provided. Projection optical system PL
a, PLc, PLd, PLg and projection optical systems PLb, PL
The d and PLf are arranged in two rows in a staggered manner, and adjacent projection optical systems among the projection optical systems PLa to PLg (for example, the projection optical systems PLa and PLb, PLb and PLc).
Are displaced by a predetermined amount in the X-axis direction. And
The joints of the trapezoidal projection areas corresponding to the projection optical systems Pa to PLg overlap on the photosensitive substrate P. Above mask stage MST, alignment optical systems 500A and 500 for aligning mask M and photosensitive substrate P are provided.
B is provided. Alignment optical system 500A, 5
00B is movable in the Y-axis direction by a drive mechanism (not shown), and the illumination optical system IL
And the mask M, and retreats from the illumination area during scanning exposure. The alignment optical systems 500A and 500B detect mask alignment marks formed on the mask M and detect substrate alignment marks formed on the photosensitive substrate P via the projection optical systems PLa and PLg.

FIGS. 22 to 24 are views for explaining an alignment processing procedure and an exposure processing procedure using the exposure apparatus EXJ. Here, a case where four devices (pattern formation regions) PA1 to PA4 are formed on the photosensitive substrate P will be described. As shown in FIG. 22, alignment marks are formed at four corners of each of the pattern formation areas PA1 to PA4 on the photosensitive substrate P. Exposure equipment EX
J first projects two substrate alignment marks m1 and m2 on the −X side of the first pattern formation area PA1 on the photosensitive substrate P by the alignment optical systems 500A and 500B, as shown in FIG. Optical systems PLa and PLg
To detect through. Here, the alignment optical system 500
A and 500B simultaneously detect mask alignment marks (not shown in FIG. 22) corresponding to the substrate alignment marks m1 and m2. Next, as shown in FIG. 22B, the photosensitive substrate P is moved to the −X side by the substrate stage PST, and the alignment optical systems 500A and 500B are moved to the two substrate alignment marks m3 and m4 on the + X side of the pattern formation area PA1. Is detected via the projection optical systems PLa and PLg. At this time, the mask M is also placed on the mask stage MS.
The mask alignment mark corresponding to the substrate alignment marks m3 and m4 of the photosensitive substrate P is detected together with the substrate alignment marks m3 and m4. Next, as shown in FIG. 22C, the photosensitive substrate P is moved to the −X side by the substrate stage PST, and the alignment optical systems 500A and 500B are moved to the substrate alignment mark m1 in the second pattern formation area PA2 of the photosensitive substrate P. , M2, and the corresponding mask alignment marks. Next, as shown in FIG. 22D, the photosensitive substrate P moves to the -X side, and the alignment optical systems 500A and 500A.
B detects the substrate alignment marks m3 and m4 in the pattern formation area PA2 and the corresponding mask alignment marks. Next, as shown in FIG.
The photosensitive substrate P is step-moved to the -Y side by the substrate stage PST, and the alignment optical systems 500A and 500B detect the substrate alignment marks m3 and m4 in the third pattern formation area PA3 and the corresponding mask alignment marks. Next, as shown in FIG.
The photosensitive substrate P moves to the + X side, and the alignment optical system 50 moves.
0A and 500B detect the substrate alignment marks m1 and m2 in the pattern formation area PA3 and the corresponding mask alignment marks. Next, as shown in FIG. 23 (c), the photosensitive substrate P moves to the + X side, and the alignment optical systems 500A and 500B move the substrate alignment marks m3 and m4 in the fourth pattern formation area PA4 and the corresponding masks. Detect alignment marks. Next, as shown in FIG. 23D, the photosensitive substrate P moves to the + X side, and the alignment optical systems 500A and 500B move the substrate alignment marks m1 and m in the pattern formation area PA4.
2, and a corresponding mask alignment mark are detected.

As described above, the mask M and the photosensitive substrate P
The two alignment optical systems 500A and 500B are connected to each pattern formation area PA while repeating the step movement of
1 to PA4 each substrate alignment mark m1
The position information of m4 and the position information of the mask alignment mark are detected. Then, in the exposure apparatus EXJ, based on the detection results of the alignment optical systems 500A and 500B, the position error between the mask M and the photosensitive substrate P for each pattern formation region, and image characteristics such as shift, rotation, and scaling are obtained. A correction value is calculated from the obtained error information, and an exposure process is performed based on the correction value. When performing the exposure process, first, as shown in FIG.
Lastly, the pattern formation area PA on which the alignment processing was performed
Exposure processing is performed on No. 4. That is, the photosensitive substrate P
The pattern formation of the photosensitive substrate P is performed by irradiating the mask M with exposure light while synchronously moving the substrate stage PST supporting the mask M and the mask stage MST supporting the mask M (not shown in FIG. 24) in the −X direction. Exposure processing is performed on the area PA4. When the exposure processing on the pattern formation area PA4 is completed, the positions of the mask M and the photosensitive substrate P are set to perform the scanning exposure processing on the pattern formation area PA3, as shown in FIG. That is, since the photosensitive substrate P moves in the −X direction and the mask M (not shown in FIG. 24) returns to the initial position,
It moves greatly in the direction. Then, the pattern formation area PA
3 is subjected to a scanning exposure process. When the exposure processing on the pattern formation area PA3 is completed, the positions of the mask M and the photosensitive substrate P are set to perform the scanning exposure processing on the pattern formation area PA1 as shown in FIG. That is, the photosensitive substrate P is placed on the substrate stage PST.
As a result, the mask M moves largely in the + X direction and also moves in the + Y direction, and the mask M largely moves to the + X side to return to the initial position. Then, a scanning exposure process is performed on the pattern formation area PA1. When the exposure processing on the pattern formation area PA1 is completed, the positions of the mask M and the photosensitive substrate P are set to perform the scanning exposure processing on the pattern formation area PA2, as shown in FIG. That is, the photosensitive substrate P moves in the −X direction, and the mask M largely moves in the + X direction to return to the initial position. Then, a scanning exposure process is performed on the pattern formation area PA2. Thus, the exposure processing for each of the pattern formation areas PA1 to PA4 is completed.

[0007]

However, the above-mentioned conventional exposure apparatus and exposure method have the following problems. In the conventional method described above, in order to perform exposure processing on the four pattern formation regions (devices) PA1 to PA4, it is necessary to perform the alignment mark detection operation eight times while step-moving the mask M and the photosensitive substrate P. The time required for the alignment process was long. If an attempt is made to increase the number of devices manufactured from one photosensitive substrate P, the alignment processing time becomes longer. When the alignment processing time becomes longer, the productivity of the entire exposure apparatus decreases. On the other hand, in order to shorten the alignment processing time, it is conceivable to reduce the number of alignment marks to be detected, and the alignment processing is performed by reducing the number of alignment marks detected in one pattern formation region from the above four to, for example, two. However, if the number of alignment marks to be detected is reduced, image characteristics such as scaling, rotation, and orthogonality are not accurately detected, resulting in a decrease in alignment accuracy. When the alignment accuracy decreases, the pattern accuracy of a device to be manufactured decreases.

The present invention has been made in view of such circumstances, and provides an exposure method, an exposure apparatus, and a device manufacturing method which can shorten the alignment processing time while maintaining accuracy and improve productivity. With the goal.

[0009]

In order to solve the above-mentioned problems, the present invention employs the following structure corresponding to FIGS. 1 to 20 shown in the embodiments. The exposure method of the present invention
In an exposure method for exposing the pattern of the mask (M) to the substrate (P) while synchronously moving the mask (M) and the substrate (P) in the first direction (X), A second direction opposing each of the plurality of alignment marks (m1 to m6) provided and intersecting the first direction (X);
A plurality of alignment systems (AL1 to AL6) arranged at least three in a row in the direction (Y) of FIG. (P). Further, the exposure apparatus (EX) of the present invention moves the mask (M) and the substrate (P) in the first direction (X) synchronously, and simultaneously shifts the pattern of the mask (M) with respect to the substrate (P). In an exposure apparatus for performing exposure, a plurality of alignment systems (AL1 to AL6) for detecting alignment marks (m1 to m6) provided at a plurality of positions on a substrate (P), respectively.
6), wherein at least three alignment systems (AL1 to AL6) are arranged in a second direction (Y) intersecting the first direction (X).

According to the present invention, at least three alignment systems are arranged in the second direction which is a non-scanning direction intersecting the first direction which is the scanning direction of the mask and the substrate. The number of alignment mark detection operations can be reduced compared to the related art without reducing the number of alignment marks to be formed. Therefore, the alignment processing time can be reduced while maintaining the alignment accuracy.

In the device manufacturing method of the present invention, a step (204) of exposing a device pattern drawn on a mask (M) to a substrate (P) using the above-described exposure method or the above-described exposure apparatus (EX). ) And a step (204) of developing the exposed substrate (P).

According to the present invention, the precision of the device pattern to be manufactured can be improved by performing the exposure processing after the alignment processing with high precision. Further, since the alignment processing time is shortened, the productivity in manufacturing the device can be improved.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An exposure apparatus according to the present invention will be described below with reference to FIGS. FIG. 1 is a schematic perspective view showing an embodiment of the exposure apparatus of the present invention, and FIG. 2 is a schematic configuration diagram. 1 and 2, an exposure apparatus EX includes a mask stage MST that supports a mask M on which a pattern is formed, and a substrate stage PST that supports a photosensitive substrate P.
And an illumination optical system IL for illuminating the mask M supported by the mask stage MST with the exposure light EL, and an image of the pattern of the mask M illuminated by the exposure light EL on the photosensitive substrate P supported by the substrate stage PST. Projection optical system PL for projection
And an alignment system AL for detecting an alignment mark provided on the photosensitive substrate P. The mask M supported by the mask stage MST and the photosensitive substrate P supported by the substrate stage PST are arranged in a conjugate positional relationship via the projection optical system PL. A plurality of illumination optical systems IL, and in this embodiment, seven illumination system modules I
M (IMa to IMg). The projection optical system PL also has a plurality of projection optical systems PLa to PLg in the present embodiment, corresponding to the number of illumination system modules IM. Each of projection optical systems PLa to PLg is arranged corresponding to each of illumination system modules IMa to IMg. The photosensitive substrate P is a glass plate (glass substrate)
Is coated with a photosensitive agent (photoresist).

Here, the exposure apparatus EX according to the present embodiment
Is a scanning type exposure apparatus that performs scanning exposure by synchronously moving the mask M and the photosensitive substrate P with respect to the exposure light EL. In the following description, the direction of the optical axis of the projection optical system PL will be referred to as the Z-axis direction.
In the direction perpendicular to the axial direction, the synchronous movement direction of the mask M and the photosensitive substrate P is defined as the X-axis direction (first direction, scanning direction), and the direction orthogonal to the Z-axis direction and the X-axis direction (scanning direction) is defined as the Y-axis direction. (Second direction, non-scanning direction). In addition, directions around the X axis, around the Y axis, and around the Z axis are defined as θX direction, θY direction, and θZ direction.

As shown in FIG. 2, the illumination optical system IL includes a light source 1 such as an ultra-high pressure mercury lamp, an elliptical mirror 1a for condensing a light beam emitted from the light source 1, and a condensing light by the elliptical mirror 1a. A dichroic mirror 2 that reflects a light beam having a wavelength necessary for exposure and transmits light beams having other wavelengths among the light beams that have been transmitted, and a light beam that is further required for exposure among light beams reflected by the dichroic mirror 2 (usually, g, a wavelength selection filter 3 that passes only at least one band of the h and i lines), a plurality of light beams from the wavelength selection filter 3,
In the present embodiment, a light guide 4 is provided, which branches into seven light beams and enters each of the illumination system modules IMa to IMg via the reflection mirror 5.

A plurality of illumination system modules IM, seven in this embodiment, IMa to IMg, are provided (however, FIG.
In FIG. 2, only those corresponding to the illumination system module IMg are shown for convenience), and each of the illumination optical systems IMa to IMg is arranged at a constant interval in the X-axis direction and the Y-axis direction. The exposure light EL emitted from each of the plurality of illumination system modules IMa to IMg
Illuminates different small areas on the mask M (illumination areas of the illumination optical system).

Each of the illumination system modules IMa to IMg includes an illumination shutter 6, a relay lens 7, a fly-eye lens 8 as an optical integrator, and a condenser lens 9. The illumination shutter 6
The light guide 4 is disposed on the downstream side of the optical path so as to be able to move forward and backward with respect to the optical path. The illumination shutter 6 blocks light from the light path when the light path is blocked, and releases the light from the light path when the light path is released. The illumination shutter 6 has
A shutter driving unit 6a for moving the illumination shutter 6 forward and backward with respect to the optical path of the light beam is connected. The shutter driving section 6a is controlled by the control device CONT.

Each of the illumination system modules IMa to IMg is provided with a light amount adjusting mechanism 10. The light amount adjustment mechanism 10 adjusts the exposure amount of each optical path by setting the illuminance of a light beam for each optical path, and includes a half mirror 11, a detector 12, a filter 13,
And a filter driving unit 14. Half mirror 11
Is arranged in the optical path between the filter 13 and the relay lens 7, and makes a part of the light flux transmitted through the filter 13 enter the detector 12. Each of the detectors 12 always independently detects the illuminance of the incident light flux, and outputs a detected illuminance signal to the control device CONT.

As shown in FIG. 3, the filter 13 is formed by patterning a glass plate 13a in a barb shape with Cr or the like, and the transmittance gradually changes linearly within a certain range along the X-axis direction. It is arranged between the illumination shutter 6 and the half mirror 11 in each optical path.

The half mirror 11 and the detector 1
2 and the filter 13 are provided for each of a plurality of optical paths. The filter driving unit 14 moves the filter 13 in the X-axis direction based on an instruction from the control device CONT. Then, the light amount for each optical path is adjusted by moving the filter 13 by the filter driving unit 14.

The light beam transmitted through the light amount adjusting mechanism 10 reaches the fly-eye lens 8 via the relay lens 7. The fly-eye lens 8 forms a secondary light source on the exit surface side, and can illuminate the illumination area of the mask M with uniform illuminance via the condenser lens 9. The exposure light EL that has passed through the condenser lens 9 passes through the catadioptric optical system 15 including the right-angle prism 16, the lens system 17, and the concave mirror 18 in the illumination system module, and then passes through the mask M to a predetermined position. Illuminate in the illumination area. The mask M is illuminated in different illumination areas by the respective exposure lights EL transmitted through the illumination system modules IMa to IMg.

Mask stage MST supporting mask M
Has a long stroke in the X-axis direction for performing one-dimensional scanning exposure, and a stroke at a predetermined distance in the Y-axis direction orthogonal to the scanning direction. As shown in FIG. 2, the mask stage MST includes a mask stage drive section MSTD that moves the mask stage MST in the X-axis direction and the Y-axis direction. The mask stage driving section MSTD is controlled by the control device CONT.

As shown in FIG. 1, the mask stage MST
Movable mirrors 32a and 32b are respectively provided at the upper edges in the X-axis direction and the Y-axis direction in orthogonal directions. A plurality of, in this embodiment, two laser interferometers Mx1 and Mx2 are arranged facing the movable mirror 32a. Further, a laser interferometer My1 is arranged to face the movable mirror 32b. Laser interferometer Mx1, Mx2
Each irradiates the movable mirror 32a with laser light, and detects the distance from the movable mirror 32a. Laser interferometer Mx1,
The detection result of Mx2 is output to the control device CONT, and the control device CONT calculates the position of the mask stage MST in the X-axis direction and the amount of rotation around the Z-axis based on the detection results of the laser interferometers Mx1 and Mx2. The laser interferometer My1 irradiates the movable mirror 32b with laser light and detects the distance from the movable mirror 32b. The detection result of the laser interferometer My1 is output to the controller CONT, and the controller CONT obtains the position of the mask stage MST in the Y-axis direction based on the detection result of the laser interferometer My1. The control device CONT monitors the position (posture) of the mask stage MST from the outputs of the laser interferometers Mx1, Mx2, and My1, and controls the mask stage driving unit MSTD to move the mask stage MST to the desired position (posture). ).

The exposure light EL transmitted through the mask M enters each of the projection optical systems PLa to PLg. The projection optical systems PLa to PLg form a pattern image existing in the illumination area of the mask M on the photosensitive substrate P, and project and expose the pattern image on a specific area (projection area) of the photosensitive substrate P.
It is provided corresponding to each of the illumination system modules IMa to IMg.

As shown in FIG. 1, a plurality of projection optical systems PL
a to PLg, projection optical systems PLa, PLc, PL
e, PLg and the projection optical systems PLb, PLd, PLf are 2
They are arranged in rows in a staggered pattern. That is, the projection optical systems PLa to PLg arranged in a staggered manner are adjacent to each other (for example, the projection optical systems PLa and PLb, PL
b and PLc) are displaced by a predetermined amount in the Y-axis direction. Each of these projection optical systems PLa to PLg transmits a plurality of exposure light EL emitted from the illumination system modules IMa to IMg and transmitted through the mask M, and the pattern image of the mask M is formed on the photosensitive substrate P mounted on the substrate stage PST. Is projected. That is, the exposure light EL transmitted through each of the projection optical systems PLa to PLg forms a pattern image corresponding to the illumination area of the mask M on a different projection area on the photosensitive substrate P with a predetermined imaging characteristic.

As shown in FIG. 2, the projection optical systems PLa-P
Each of Lg includes an image shift mechanism 19, two sets of catadioptric optical systems 21 and 22, a field stop 20, and a magnification adjustment mechanism 23. The image shift mechanism 19 is, for example,
The pattern image of the mask M is shifted in the Y-axis direction or the X-axis direction by rotating the two parallel flat plate glasses around the X-axis or the Y-axis, respectively. The exposure light EL that has passed through the mask M passes through the image shift mechanism 19 and then
The light enters the catadioptric optical system 21 of the set.

The catadioptric optical system 21 forms an intermediate image of the pattern of the mask M,
4, a lens system 25 and a concave mirror 26. The right-angle prism 24 is rotatable around the Z axis, and can rotate the pattern image of the mask M.

At this intermediate image position, a field stop 20 is arranged. The field stop 20 sets a projection area on the photosensitive substrate P, and is arranged at a position substantially conjugate with the mask M and the photosensitive substrate P in the projection optical system PL. The light beam transmitted through the field stop 20 enters a second set of catadioptric optical system 22. Catoptric system 22
Includes a right-angle prism 27, a lens system 28, and a concave mirror 29, like the catadioptric optical system 21. The right-angle prism 27 is also rotatable about the Z axis, and the mask M
Can be rotated.

The exposure light EL emitted from the catadioptric optical system 22 passes through a magnification adjusting mechanism 23 and forms a pattern image of the mask M on the photosensitive substrate P at the same magnification. The magnification adjusting mechanism 23 includes, for example, three lenses of a plano-convex lens, a biconvex lens, and a plano-convex lens, and moves the biconvex lens located between the plano-convex lens and the plano-concave lens in the Z direction to change the relative position. Thus, the magnification of the pattern image of the mask M is changed.

Substrate stage PST supporting photosensitive substrate P
Has a substrate holder, and holds the photosensitive substrate P via the substrate holder. The substrate stage PST, like the mask stage MST, has a long stroke in the X-axis direction for performing one-dimensional scanning exposure and a long stroke for stepwise movement in the Y-axis direction orthogonal to the scanning direction. As shown in FIG. 2, the substrate stage driving unit PST moves the substrate stage PST in the X-axis direction and the Y-axis direction.
D is provided. The substrate stage driving unit PSTD is controlled by the control device CONT. Further, the substrate stage PS
T is also movable in the Z-axis direction and in the θX, θY, and θZ directions.

As shown in FIG. 1, movable mirrors 34a and 34b are respectively provided at orthogonal edges on the substrate stage PST in the X-axis direction and the Y-axis direction. A plurality of, in this embodiment, two laser interferometers Px1 and Px2 are arranged to face the movable mirror 34a extending in the Y-axis direction. Further, a plurality of, in this embodiment, three laser interferometers Py1, Py2, and Py3 are arranged to face the movable mirror 34b extending in the X-axis direction.
Here, each of the plurality of laser interferometers Py1 to Py3 is provided at equal intervals along the X-axis direction. Each of the laser interferometers Px1 and Px2 irradiates the movable mirror 34a with laser light and detects the distance from the movable mirror 34a. The detection results of the laser interferometers Px1 and Px2 are output to the control unit CONT. Based on the detection results of the laser interferometers Px1 and Px2, the control unit CONT rotates the substrate stage PST in the X-axis direction and around the Z-axis. Find the quantity. In addition, laser interferometers Py1 to Py
y3 irradiates the movable mirror 34b with laser light, and moves the movable mirror 34b.
The distance to b is detected. Laser interferometer Py1 to Py3
Is output to the control device CONT, and the control device C
The ONT obtains the position of the substrate stage PST in the Y-axis direction based on the detection results of the laser interferometers Py1 to Py3. The control unit CONT monitors the position (posture) of the substrate stage PST from the outputs of the laser interferometers Px1, Px2, and Py1 to Py3, and controls the substrate stage driving unit PSTD to move the substrate stage PST to a desired position. (Posture).

The mask stage driving unit MSTD and the substrate stage driving unit PSTD are independently controlled by the control unit CONT. Under
Each can be moved independently. The control unit CONT monitors both the positions of the mask stage MST and the substrate stage PST,
By controlling D and MSTD, the mask M and the photosensitive substrate P are synchronously moved in the X-axis direction at an arbitrary scanning speed (synchronous moving speed) with respect to the projection optical system PL.

Projection optical systems PLa to PL on photosensitive substrate P
g of the projection areas 50a to 50g each have a predetermined shape,
In the present embodiment, the shape is set to a trapezoidal shape. As shown in FIG. 1, the projection regions 50a, 50c, 50e, and 50g and the projection regions 50b, 50d, and 50f are arranged to face each other in the X-axis direction. Further, the projection areas 50a to 50g are:
The ends (boundaries, joints) of adjacent projection areas are Y
They are arranged in parallel so as to overlap in the axial direction. And
By arranging the boundaries of the projection regions 50a to 50g in parallel so as to overlap each other in the Y-axis direction, the total width of the projection regions in the X-axis direction is set to be substantially equal. By doing so, the exposure amount when performing scanning exposure in the X-axis direction is made equal. in this way,
Projection areas 50a-5 by the respective projection optical systems PLa-PLg
By providing an overlap region (joint portion) where each of 0 g overlaps, a change in optical aberration and a change in illuminance at the joint portion can be made smooth.

Next, the alignment system AL will be described. The alignment system AL detects alignment marks (substrate alignment marks) provided on the photosensitive substrate P. As shown in FIGS. 1 and 2, the projection optical systems PLa, PLc, PLe,
It is provided so as to face the photosensitive substrate P between PLg and the projection optical systems PLb, PLd, PLf. A plurality of alignment systems AL are arranged side by side in the Y-axis direction (second direction), and detect a plurality of substrate alignment marks provided on the photosensitive substrate P. Further, between the projection optical systems PLa, PLc, PLe, PLg and the projection optical systems PLb, PLd, PLf disposed in two rows, the photosensitive substrate P is opposed to the photosensitive substrate P, and the Z direction of the photosensitive substrate P -Side auto-focus detection system (AF detection system) that detects the position in the camera
A mask 60 and a mask-side autofocus detection system 70 that is opposed to the mask M and detects the position of the mask M in the Z-axis direction are provided. A plurality of substrate-side AF detection systems 60 and a plurality of mask-side AF detection systems 70 are also arranged side by side in the Y-axis direction. Here, a plurality of alignment systems A
L, substrate-side AF detection system 60, and mask-side AF detection system 7
Numerals 0 are unitized by being supported by the housing H as shown in FIG. In the following description, the housing H
The AF detection systems 60 and 70 and the alignment system AL supported by are referred to as “alignment unit” as appropriate.

FIG. 4 is a perspective view of the alignment unit U. FIG. 5 is a diagram for explaining the positional relationship among the alignment system AL, the substrate-side AF detection system 60, and the mask-side AF detection system 70 of the alignment unit U, the mask M, and the photosensitive substrate P. Here, FIG.
FIG. 5B is a diagram showing a positional relationship between the mask M and the mask-side AF detection system 70, FIG. 5B is a cross-sectional view of the alignment unit U of FIG. 4 taken along the line AA, and FIG. Substrate P
FIG. 13 is a plan view of a substrate stage PST that supports the substrate viewed from above (+ Z side). Then, the mask side A shown in FIG.
The F detection system 70 corresponds to a cross-sectional view taken along the line BB of FIG.
As shown in FIGS. 4 and 5B, the alignment system AL
Plural (AL1 to AL6) are arranged in the Y-axis direction, which is the non-scanning direction, and six in this embodiment. The alignment systems AL1 to AL6 are arranged between the projection optical systems PLa, PLc, PLe, and PLg arranged in two rows and the projection optical systems PLb, PLd, and PLf, and the projection areas 50a of the projection optical systems PLa to PLg. They are arranged along the arrangement direction of ~ 50g.

As shown in FIG. 5B, of the plurality of alignment systems AL1 to AL6 arranged in the Y axis direction, the alignment system AL2 to AL5 at the center in the Y axis direction is the projection optical system PL.
The alignment systems AL1 and AL6 on both sides in the Y-axis direction are provided inside (PLa to PLg), and are provided outside the projection optical system PL. Here, as shown in FIGS. 5B and 5C, the interval between the outer two alignment systems AL1 and AL6 of the plurality of alignment systems AL1 to AL6 is equal to the length of the photosensitive substrate P in the Y-axis direction. They are set almost equal. As shown in FIGS. 5A and 5B, the interval between the two outer alignment systems AL1 and AL6 is longer than the length of the mask M in the Y-axis direction (the length of the mask M in the Y-axis direction). Above).

On the other hand, as shown in FIG. 5C, a plurality of alignment marks (substrate alignment marks) m1 to m6 used for alignment processing are provided on the photosensitive substrate P. In the present embodiment, six alignment marks m1 to m6 arranged in the Y-axis direction are formed at six locations in the X-axis direction at intervals on the photosensitive substrate P, and a total of 36 alignment marks are formed. Have been. In the figure, the alignment mark is shown as “●”, but for example, a cross mark “+” also shows a box mark “□”.
May be.

In this embodiment, Y on the photosensitive substrate P
Alignment systems AL1 to AL6 are provided corresponding to six alignment marks m1 to m6 arranged in the axial direction. And these six alignment systems AL1 to AL
6 are set so as to face each of the alignment marks m1 to m6, and the alignment system AL1
AL6 face the alignment marks m1 to m6, respectively.
Can be simultaneously detected. That is, in the present embodiment, the arrangement (interval) of the alignment systems AL1 to AL6 is set based on the arrangement (interval) of the alignment marks m1 to m6 formed on the photosensitive substrate P.

As shown in FIGS. 4 and 5B, a plurality of substrate-side AF detection systems 60 (60a to 60g) are provided on both sides of the alignment systems AL1 to AL6 in the X-axis direction. In the present embodiment, the substrate-side AF detection system
There are seven of 60 g. Substrate AF detection system 60a
To 60 g are provided at positions facing the photosensitive substrate P supported by the substrate stage PST, and detect positions in a direction orthogonal to the exposure surface of the photosensitive substrate P, that is, positions in the Z-axis direction. Plural substrate-side AF detection systems 60a-60
g, AF detection systems 60a, 60b, 60d, 60
f and 60g are arranged side by side in the Y-axis direction, and the AF detection systems 60c and 60e are arranged side by side in the Y-axis direction. Then, these two rows of AF detection systems 60a,
60b, 60d, 60f, 60g and AF detection system 60c,
60e are arranged so as to sandwich the alignment system AL (AL1 to AL6).

Of the plurality of substrate-side AF detection systems 60a to 60g, the substrate-side AF detection systems 60b to 60f at the center in the Y-axis direction
Are provided inside the projection optical systems PL (PLa to PLg), and the substrate-side AF detection systems 60a and 60g on both sides in the Y-axis direction are provided outside the projection optical systems PL (PLa to PLg). Here, the outer substrate side AF detection systems 60a and 60g
Are provided adjacent to the outer two alignment systems AL1 and AL6 of the plurality of alignment systems AL1 to AL6, respectively. The distance between the two outer substrate-side AF detection systems 60a and 60g is also set substantially equal to the length of the photosensitive substrate P in the Y-axis direction. Further, the projection optical system P
The substrate-side AF detection systems 60b to 6 provided inside L
0f are arranged in two rows in a staggered manner, and are provided at substantially equal intervals in the Y-axis direction.

The detection results of the substrate-side AF detection systems 60a to 60g are output to the control unit CONT, and the control unit CONT determines the Z-axis direction of the photosensitive substrate P based on the detection results of the substrate-side AF detection systems 60a to 60g. Find the position at. Further, since the substrate-side AF detection systems 60a to 60g are two-dimensionally arranged in each of the X-axis direction and the Y-axis direction, the control device CONT is based on the detection results of the plurality of substrate-side AF detection systems 60a to 60g. And X of the photosensitive substrate P
The attitude in the direction around the axis and the direction around the Y axis can be obtained. The control device CONT drives the substrate stage driving unit PSTD based on the obtained position in the Z-axis direction and the attitude in the directions around the X-axis and the Y-axis, and adjusts the position of the photosensitive substrate P in the Z-axis direction and X Adjustment of the posture in the direction around the axis and the Y axis, that is, leveling adjustment is performed.

As shown in FIGS. 4 and 5A, the alignment unit U includes a plurality of mask-side AF detection systems 70.
(70a to 70d) are provided. In the present embodiment, four mask-side AF detection systems 70a to 70d are provided. The mask-side AF detection systems 70a to 70d are provided at positions facing the mask M supported by the mask stage MST, and detect positions in a direction orthogonal to the pattern formation surface of the mask M, that is, in the Z-axis direction. . Each of the plurality of mask-side AF detection systems 70a to 70d is arranged at equal intervals in the Y-axis direction. Here, as shown in FIG. 5A, the mask-side AF detection system 7
Reference numerals 0a to 70d are provided inside the projection optical system PL (PLa to PLg), and two mask-side AF detection systems 70a,
The interval of 70d is set substantially equal to the length of the mask M in the Y-axis direction.

FIG. 6 is a schematic configuration diagram of the alignment system AL1. In addition, other alignment systems AL2 to AL6 are also
The configuration is equivalent to that of the alignment system AL1. As shown in FIG. 6, an alignment system AL1 includes an alignment light source 81 composed of a halogen lamp for emitting alignment detection light, and a light guide 82 composed of an optical fiber for guiding the detection light emitted from the light source 81 to a relay lens 83. , A half mirror 84 provided on the downstream side of the optical path of the relay lens 83, and the half mirror 84 and the photosensitive substrate P to be detected.
(Alignment marks m1 to m6),
An objective lens 85 for irradiating the detection light having passed through the half mirror 84 onto the photosensitive substrate P, and a deflecting mirror 86 for guiding reflected light generated on the photosensitive substrate P (alignment mark) by irradiation of the detection light via the half mirror 84. , A beam splitter (branching device) 87 that branches the reflected light from the deflecting mirror 86, a low-magnification alignment light receiving system 88 into which one of the two light beams split by the beam splitter 87 enters, and the other light beam And a high-magnification alignment light-receiving system 89 into which light enters. The low-magnification alignment light-receiving system 88 has a low-magnification lens system 88A and a low-magnification image sensor (CCD) 88B, and can measure a wide area on the photosensitive substrate P with a predetermined accuracy. The high-magnification alignment light-receiving system 89 has a high-magnification lens system 89A and a high-magnification image sensor (CCD) 89B, and can measure a narrow area of the photosensitive substrate P with high accuracy. These low magnification alignment light receiving system 88A and high magnification alignment light receiving system 88B
And are arranged coaxially. Then, light (reflected light) generated by irradiating the photosensitive substrate P (substrate alignment mark) with the alignment detection light is received by the low-magnification alignment light receiving system 88 and the high-magnification alignment light receiving system 89, respectively.

The low-magnification alignment light-receiving system 88 generates an alignment mark m1 (m) based on light information from a wide area of the photosensitive substrate P irradiated by the detection light for alignment.
Search alignment processing for detecting position information of 2 to m6) with rough accuracy is performed. On the other hand, the high-magnification alignment light receiving system 89 detects the position information of the alignment mark m1 (m2 to m6) with high accuracy based on the light information from the narrow area of the photosensitive substrate P irradiated by the alignment detection light. Perform alignment processing. Each of the low-magnification alignment light-receiving system 88 and the high-magnification alignment light-receiving system 89 outputs a light-receiving signal to the control unit CONT, and the control unit CONT performs image processing based on the light-receiving signals of the alignment light-receiving systems 88 and 89, respectively. Ask for information. Here, the control device CONT performs fine alignment processing by the high-magnification alignment light receiving system 89 with reference to the search alignment processing result by the low-magnification alignment light receiving system 88.

When the mark position information is obtained by the alignment system AL, the mark position is obtained from the edge information of the mark by image processing. Note that a pattern matching method may be used as a method for obtaining a mark position. That is, the control device CONT is connected to a storage device (not shown) that stores the template image, and obtains the coordinates of the pattern that matches the template (the position in the moving coordinate system of the stage) by pattern matching. The controller CONT uses these coordinate values to determine the amount of deviation that has occurred during the splicing exposure or the overlay exposure, and provides a correction parameter to the substrate stage driving unit PSTD during the next and subsequent exposures, thereby achieving alignment accuracy. Enhance.

The alignment system AL1 (AL2 to AL
In 6), the light source 81, the light guide 82, and the relay lens system 83 constitute a light transmission system of an alignment system.
Beam splitter 87, low magnification alignment light receiving system 8
8 and the high-magnification alignment light receiving system 89 constitute a light receiving system of the alignment system. The light source 81 may be provided in each of the plurality of alignment systems AL1 to AL6, or the light emitted from one light source 81 may be branched by a plurality of light guides (optical fibers) 82, and the plurality of branched light beams may be used. May be supplied to each of the alignment systems AL1 to AL6. The alignment detection light is preferably non-photosensitive to the resist on the photosensitive substrate P, and cuts light of a specific wavelength from the light (white light) emitted from the light source 81 composed of a halogen lamp. The filter may be provided on the optical path between the light source 81 and the photosensitive substrate P.

FIG. 7 is a schematic configuration diagram showing the substrate side AF detection system 60a. Note that the other substrate-side AF detection systems 60b to 60b
0g and the mask-side AF detection systems 70a to 70d
The configuration is the same as that of the detection system 60a. As shown in FIG.
The AF detection system 60a includes an AF light source 61 composed of an LED that emits AF detection light, a light transmission lens system 62 on which the detection light emitted from the light source 61 is incident, and a light transmitted through the light transmission lens system 62. A mirror 63 that guides the photosensitive substrate P (or mask M) to be detected from an inclined direction, and a mirror 63
A mirror 64 for guiding the reflected light generated on the photosensitive substrate P (or the mask M) based on the detection light irradiated through the light receiving lens system 65, and an image pickup device (CCD) for receiving the light passing through the light receiving lens system 65 66. The light transmitting lens system 62 irradiates the photosensitive substrate P after shaping the detection light into, for example, a slit shape. Here, as shown in FIG. 7, the position of the photosensitive substrate P to be detected in the Z-axis direction is ΔZ.
When displaced, the slit-shaped detection light emitted from the inclined direction displaces the image forming position in the X-axis direction of the image sensor 66 by ΔX. The imaging signal of the imaging device 66 is output to the control device CONT, and the control device CONT
The displacement amount ΔZ of the photosensitive substrate P in the Z-axis direction is obtained based on the displacement amount ΔX of the imaging position with respect to the reference position. Here, if the magnification from the incident surface to the exit surface side of the light receiving lens system 65 is set to N times (for example, 10 times), the image pickup device 66 becomes N times (1 times) the displacement ΔZ of the photosensitive substrate P.
0 times).

The AF detection system 60a (60b to 60g,
70a to 70d), the light source 61, the light transmitting lens system 62,
And the mirror 63 constitute a light transmission system of an AF detection system,
The mirror 64, the light receiving lens system 65, and the image sensor 66 are A
The light receiving system of the F detection system is configured. The light source 61 may be provided in each of the plurality of AF detection systems 60a to 60g (70a to 70d). A configuration in which a plurality of branched lights are supplied to each of a plurality of AF detection systems may be employed. It is also desirable that the AF detection light be non-photosensitive to the resist on the photosensitive substrate P. It is good also as a structure provided on the optical path between P and.

Incidentally, the alignment system AL in the present embodiment is an off-axis system, and when performing an alignment process, a baseline amount which is a relative position between the mask M and the substrate alignment system AL is measured. Hereinafter, the baseline measurement method will be described. As shown in FIGS. 1, 2 and 5, a mask M is provided with a baseline measurement mark (mask-side AIS mark) 90, and the substrate stage PST is provided with a baseline measurement mark (substrate side mark). A reference member 92 having an (AIS mark) 91 is provided. The formation position (height) of the substrate-side AIS mark 91 in the Z-axis direction is set so as to substantially coincide with the surface (exposure surface) of the photosensitive substrate P. The mask-side AIS mark 90 is provided in a predetermined positional relationship with respect to a specific position (for example, a center position) of the mask M. The mask-side AIS mark 90 and the substrate-side AIS mark 91 correspond to each other, and are provided in a plurality in the Y-axis direction. Further, as shown in FIG. 2, below the reference member 92, an AIS light receiving system 94 capable of receiving light passing through the reference member 92 is embedded in the substrate stage PST. AI
The S light receiving system 94 includes a lens system 95 and an imaging device (CCD) 96 that receives light passing through the lens system 95.

Next, the baseline measurement procedure will be described with reference to FIG. As shown in FIG.
The F detection system 60 detects the distance from the reference member 92 having the substrate-side AIS mark 91 provided on the substrate stage PST, and the mask-side AF detection system 70 detects the distance from the mask M having the mask-side AIS mark 90. Is detected. The control device CONT is based on the detection results of the substrate-side AF detection system 60 and the mask-side AF detection system 70,
The distance between the mask M and the reference member 92 is obtained (Step S)
A1). At this time, the position of the mask stage MST supporting the mask M is the laser interferometers Mx1, Mx2, My
1 and the position of the substrate stage PST is detected by the laser interferometers Px1, Px2 and Py1.
That is, the mask M (mask stage MST) is the laser interferometer My1, and the substrate stage PST is the laser interferometer Py.
The coordinate in the Y-axis direction is also detected using any one of 1, Py2, and Py3.

Next, as shown in FIG. 8B, the control device CONT is provided with a so-called through-the-lens (TTL).
The AIS mark 9 of the mask M is picked up by the image sensor 96 according to the method.
0 and the AIS mark 91 on the substrate stage PST, and the mask M and the substrate stage P
A relative position with respect to ST is obtained (step SA2). Specifically, the control device CONT uses the image sensor 96 to control the mask side A
The mask stage MST and the substrate stage PST are moved so that the image of the IS mark 90 matches the image of the substrate-side AIS mark 91, and the mask-side AIS mark 90 of the mask M is illuminated by the illumination optical system IL. The illumination light (exposure light) that has passed through the mask M passes through the projection optical system PL and the substrate-side AIS mark 91, and is guided to the image sensor 96.
Here, the control device CONT adjusts the position of the substrate stage PST in the Z-axis direction and the image characteristics of the projection optical system PL based on the distance between the mask M and the reference member 92 obtained in step SA1, and Each image of the mark 90 and the substrate-side AIS mark 91 is formed (focused) by the image pickup device 96. At this time, the position of the mask stage MST supporting the mask M is detected by the laser interferometers Mx1, Mx2, and My1, and the position of the substrate stage PST is detected by the laser interferometers Px1, Px2, and Py1. It should be noted that the image sensor 9 is exposed by using the exposure light.
When the AIS marks 90 and 91 are imaged by the
In order to obtain the optimal light amount (illuminance) on 6, for example,
The filter 13 in the illumination optical system IL can be driven.

Next, as shown in FIG. 8 (c), the control device CONT moves the substrate stage PST so as to move the substrate stage PST to the center of the measurement area of the alignment system AL (specifically, an index mark provided in the measurement area). The AIS mark 91 of the substrate stage PST is made coincident, and the position of the substrate stage PST at this time is detected by the laser interferometers Px1, Px2, and Py1 (step SA3). Step SA2 and step SA
From the stage position detection result obtained by the laser interferometer obtained in step 3, a baseline amount, which is a relative position between the mask M and the alignment system AL, is obtained. Then, based on the obtained baseline amount, the control device CONT moves the photosensitive substrate P placed on the substrate stage PST to the alignment system AL.
To align with the mask M.

The baseline measurement may be performed each time the exposure processing is started, or may be performed at predetermined time intervals (for example, every 10 hours, every day, etc.), and at each predetermined number of lots. Good. In addition, the above-mentioned AIS mark 90,
While the image of the image 91 is captured by the image sensor 96, the projection optical system PL
The image shift mechanism 19 of (PLa to PLg), the magnification adjustment mechanism 23, and the right-angle prisms 24 and 27 as rotation adjustment mechanisms are driven to adjust image characteristics such as shift, scaling, and rotation of the projection optical systems PLa to PLg. can do.

Next, a method of aligning the mask M with the photosensitive substrate P and a method of exposing the pattern of the mask M to the photosensitive substrate P by using the exposure apparatus EX having the alignment system AL will be described. In the present embodiment,
As shown in FIG. 9, nine pattern formation areas (exposure areas) PA1 to PA9 are set on the photosensitive substrate P, and exposure processing is performed on each of these pattern formation areas PA1 to PA9 to form a device. I do. Here, of the plurality of pattern formation areas PA1 to PA9, three pattern formation areas PA1 to PA3 are set side by side in the Y-axis direction (second direction), and three pattern formation areas PA4 to PA6 are set in the Y-axis direction. Are set side by side, and the pattern formation areas PA7 to
Three PAs 9 are set side by side in the Y-axis direction. Each of these pattern formation areas PA1 to PA9 is set to be larger in the X-axis direction than in the Y-axis direction. Then, among the plurality of alignment marks m1 to m6 arranged in the Y-axis direction, the alignment marks m1 and m
2 are arranged in pattern formation areas PA3, PA6, PA9, alignment marks m3, m4 are arranged in pattern formation areas PA2, PA5, PA8, and alignment marks m5, m6 are arranged in pattern formation areas PA1, PA4, PA.
7 so that the alignment marks m1 to m6
Are set in advance. The alignment marks m1 to m6 arranged in the Y-axis direction are arranged at predetermined intervals in the X-axis direction, so that the alignment m1 is formed at each of the four corners of the pattern formation regions PA3, PA6, and PA9. , M2 are arranged, alignments m3, m4 are arranged at four corners of the pattern formation areas PA2, PA5, PA8, and alignments m5, m6 are arranged at four corners of the pattern formation areas PA1, PA4, PA7. .

Hereinafter, FIGS. 10 to 15, FIG. 16, and FIG.
The alignment processing procedure and the exposure processing procedure will be described with reference to the flowchart of FIG. After the baseline measurement is performed as described with reference to FIG.
As shown in (a), the control device CONT moves the substrate stage PST, and moves the alignment marks m1 to m6 in the first row from the −X side provided on the photosensitive substrate P and the alignment systems AL1 to AL6. Make them face each other. As described above, in the present embodiment, the arrangement (interval) of the alignment systems AL1 to AL6 is set based on the arrangement (interval) of the alignment marks m1 to m6 formed on the photosensitive substrate P. AL
1 to AL6 are alignment marks m in the first row from the -X side
In a state facing each of 1 to m6, alignment marks m1 to m6 respectively corresponding to a plurality of pattern forming areas (exposure areas) PA1 to PA3 arranged in the Y-axis direction are simultaneously detected (step SB1). At this time, two alignment marks m5 and m are provided in the pattern formation area PA1.
6 are arranged, two alignment marks m3 and m4 are arranged in the pattern forming area PA2, and two alignment marks m5 and m6 are arranged in the pattern forming area PA3. Two alignment systems AL5 and AL6 are arranged for pattern formation area PA1, and pattern formation area P
Two alignment systems AL3 and AL4 are arranged for A2, and two alignment systems AL1 and AL2 are arranged for the pattern formation area PA3. That is,
The plurality of alignment systems AL1 to AL6 include pattern formation areas (exposure areas) PA1 to PA3 (PA
4 to PA6, PA7 to PA9)
It is configured to be arranged one by one.

Next, as shown in FIG. 10B, the control device CONT moves the substrate stage PST in the −X direction, and the second row of alignment marks m1 from the −X side provided on the photosensitive substrate P. To m6 and the alignment systems AL1 to AL6 are opposed to each other, and each of these alignment marks m1 to m6 is simultaneously detected (step SB2).

The control device CONT controls the pattern formation area P
The positions of the alignment marks in the first row and the alignment marks in the second row are detected at two locations separated by a predetermined distance in the X-axis direction with respect to each of A1 to PA3. Correction parameters for correcting image characteristics such as shift, scaling, and rotation for PA3 are obtained (step SB).
3).

Here, after detecting the alignment mark in the first row, the photosensitive substrate P scans the alignment unit U in order to detect the alignment mark in the second row. Among the plurality of substrate AF detection systems 60a to 60g arranged in the Y-axis direction
Detect the height position of the surface of the photosensitive substrate P at predetermined intervals in the X-axis direction. That is, the photosensitive substrate P
Are detected at a plurality of grid-like positions.
The detection results of each of these substrate AF detection systems 60a to 60g are output to the control device CONT, and the control device CONT is based on the detection results of the substrate AF detection systems 60a to 60g.
The surface shape of each of the pattern formation areas PA1 to PA3 of the photosensitive substrate P is obtained (step SB4).

As described above, the outer two alignment systems AL1 and AL6 of the plurality of alignment systems AL1 to AL6 are provided with the substrate AF detection systems 60a and 60a.
0 g is provided in close proximity. Therefore, the substrate AF
By performing alignment processing (alignment mark detection) by the alignment system while monitoring the position information of the photosensitive substrate P in the Z-axis direction by the detection systems 60a and 60g, the photosensitive substrate P forms an image of the projection optical system during the alignment processing. It is possible to suppress the inconvenience that the alignment process is performed in a state where the alignment process is largely displaced from the surface in the Z-axis direction.

As described with reference to FIG. 6, the alignment systems AL1 to AL6 are provided with a low-magnification alignment light receiving system 88 for search alignment and a high-magnification alignment light receiving system 89 for fine alignment. I have. Therefore, for example, when the alignment mark detection using the high-magnification alignment light-receiving system 89 is impossible, the alignment mark can be detected by switching to the low-magnification alignment light-receiving system 88 and detecting the alignment mark. As described above, by performing the alignment mark detection by switching between the low-magnification and high-magnification alignment light receiving systems, the alignment process can be performed smoothly. It is not necessary to provide the low-magnification and high-magnification alignment light receiving systems in all alignment systems AL1 to AL6, and at least two outer alignment systems AL1 and A1
What is necessary is just to be provided in L6. Of course, it may be provided in all alignment systems AL1 to AL6.

Next, the control device CONT executes step S
After correcting the image characteristics based on the correction parameters obtained in B3, an exposure process is performed on the pattern formation area PA1 (step SB5). That is, as shown in FIG. 10C, control device CONT moves substrate stage PST such that projection optical system PL and the + X side end of pattern formation area PA1 face each other. At the same time, the control unit CONT
In FIG. 10, the mask stage MST supporting the mask M (not shown in FIG. 10) also moves to the −X side, and aligns the mask M with the photosensitive substrate P. Then, the mask M and the photosensitive substrate P
The mask M is illuminated with the exposure light EL while synchronously moving in the + X direction with respect to the projection optical system PL, so that the pattern forming area PA1 is exposed. FIG.
(D) shows a state after the scanning exposure on the pattern formation area PA1 is completed. Here, the photosensitive substrate P (pattern forming area PA1) obtained in step SB4
On the substrate stage PS such that the image plane of the projection optical system coincides with the surface of the photosensitive substrate P based on the surface shape data of
Scanning exposure is performed while controlling the attitude of the photosensitive substrate P by moving T in the Z-axis direction or the θX and θY directions. In addition,
Of the plurality of projection optical systems PLa to PLg, the projection optical systems that are not used (for example, the projection optical systems PLa and PLg that protrude from the pattern formation area PA1) are shielded from the optical path by the illumination shutter 6.

Next, after correcting the image characteristics based on the correction parameters, the control unit CONT performs an exposure process on the pattern formation area PA2 (step SB6). That is, as shown in FIG.
Moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the −X side end of the pattern formation area PA2 face each other. At this time, the mask stage MST
Moves only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. Then, the mask M and the photosensitive substrate P are synchronously moved in the -X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern formation area PA2 is exposed. FIG. 11B shows the pattern formation area PA2.
Is shown after the scanning exposure for.
Also at the time of scanning exposure for the pattern formation area PA2, scanning exposure is performed while performing position control and leveling control of the photosensitive substrate P in the Z-axis direction based on the surface shape data of the pattern formation area PA2 obtained in step SB4. .

Here, the photosensitive substrate P scans in the + X direction during the scanning exposure processing for the pattern forming area PA1, and the photosensitive substrate P moves during the scanning exposure processing for the pattern forming area PA2 adjacent to the pattern forming area PA1. Scan in the -X direction. That is, after detecting alignment marks at two locations in the X-axis direction corresponding to each of the pattern formation areas PA1 to PA3 arranged in the Y-axis direction, synchronous movements in opposite directions in a plurality of adjacent pattern formation areas PA1 and PA2 are made. To expose the photosensitive substrate P. By doing so, the throughput of the entire exposure apparatus can be improved. That is, in the related art, after the exposure processing for one pattern formation area is completed, in order to perform the exposure processing for the next pattern formation area, the mask (mask stage) must be largely moved in the scanning direction to return to the initial state. However, in the present embodiment, the mask (mask stage) does not need to be largely moved when performing the exposure processing on the next pattern formation area after the exposure processing on one pattern formation area is completed. Since the moving time can be reduced, the throughput can be improved. In the present embodiment, the size of the pattern forming area in the non-scanning direction (Y-axis direction) is smaller than the scanning direction (X-axis direction). 11) As shown in FIG. 11A, moving the photosensitive substrate P stepwise in the Y-axis direction is shorter and more effective.

Next, after correcting the image characteristics based on the correction parameters, the control device CONT performs an exposure process on the pattern forming area PA3 (step SB7). That is, as shown in FIG.
Moves the substrate stage PST stepwise in the −Y direction so that the projection optical system PL and the + X side end of the pattern formation area PA3 face each other. Also at this time, the mask stage MS
T moves only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. And
The mask M and the photosensitive substrate P are moved by + X with respect to the projection optical system PL.
By illuminating the mask M with the exposure light EL while moving synchronously in the direction, the exposure processing is performed on the pattern formation area PA3. FIG. 11D shows the pattern formation area PA.
3 shows a state after the scanning exposure for No. 3 is completed. Even at the time of scanning exposure to the pattern formation area PA3, the pattern formation area PA2 determined in step SB4
Scan exposure is performed while performing position control and leveling control of the photosensitive substrate P in the Z-axis direction based on the surface shape data of. Also in this case, the scanning direction during the exposure processing on the pattern formation area PA3 is set to be opposite to the scanning direction during the exposure processing on the adjacent pattern formation area PA2.

The detection of the position of the substrate stage PST in the X-axis direction in the above steps SB1 to SB7 is performed as shown in FIG.
And as shown in FIG. 11, the laser interferometers Px1, Px2
The position detection in the Y-axis direction is performed by the laser interferometer Py1. And the control device CONT
Switches the laser interferometer to be used from Py1 to Py2 (step SB8).

Next, as shown in FIG. 12A, the control device CONT moves the substrate stage PST and moves the alignment marks m1 to m6 in the third row from the -X side provided on the photosensitive substrate P, respectively. And alignment system AL1
Face each of AL6. Lightment type AL1
~ AL6 is the alignment mark m1 in the third row from the -X side
, The alignment marks m1 to m6 respectively corresponding to a plurality of pattern formation areas (exposure areas) PA4 to PA6 arranged in the Y-axis direction are simultaneously detected in a state where they face each other (step SB9). At this time, the laser interferometer Py2 is operated, and the difference between the laser interferometers Py1 and Py2 is measured and stored as the offset 1. Thereafter, the Y coordinate of the substrate stage PST is obtained from the measured value of the laser interferometer Py2 and the offset 1.

Next, as shown in FIG. 12 (b), the control device CONT moves the substrate stage PST in the −X direction, and the alignment marks m1 in the fourth row from the −X side provided on the photosensitive substrate P. To m6 and the alignment systems AL1 to AL6, respectively, and each of these alignment marks m1 to m6 is simultaneously detected (step SB10).

The control device CONT controls the pattern formation area P
The positions of the alignment marks in the first row and the alignment marks in the second row are detected at two locations separated by a predetermined distance in the X-axis direction with respect to each of A4 to PA6, and based on these detection results, each pattern forming area PA4 is detected. A correction parameter for correcting image characteristics such as shift, scaling, and rotation of PA6 is obtained (step SB1).
1).

Here, after detecting the alignment mark in the third row, the photosensitive substrate P scans the alignment unit U in order to detect the alignment mark in the fourth row. Y
Each of the plurality of substrate AF detection systems 60a to 60g arranged in the axial direction detects the height position of the surface of the photosensitive substrate P at predetermined intervals in the X-axis direction. These substrate AF detection systems 6
0a to 60g are output to the control unit CONT, and the control unit CONT outputs the substrate AF detection systems 60a to 60g.
The surface shape of each of the pattern formation areas PA4 to PA6 of the photosensitive substrate P is obtained based on the detection result of 60 g (step SB12).

Next, the control device CONT executes step S
After correcting the image characteristics based on the correction parameters obtained in B11, exposure processing is performed on the pattern formation area PA4 (step SB13). That is, as shown in FIG. 12C, the control device CONT moves the substrate stage PST such that the projection optical system PL and the + X side end of the pattern formation area PA4 face each other. Then, the mask M is illuminated with the exposure light EL while the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, so that the pattern forming area PA4 is exposed. FIG. 12D shows a state after the scanning exposure for the pattern formation area PA4 is completed. Here, the photosensitive substrate P (pattern formation region P) determined in step SB12 is used.
Based on the surface shape data of A4), the substrate stage PST is moved in the Z-axis direction or the θX and θY directions so that the image plane of the projection optical system and the surface of the photosensitive substrate P coincide with each other. Scanning exposure is performed while controlling the attitude of the camera.

Next, after correcting the image characteristics based on the correction parameters, control device CONT performs an exposure process on pattern formation area PA5 (step SB14).
That is, as shown in FIG.
T is -X of the projection optical system PL and the pattern formation area PA5.
The substrate stage PST is step-moved in the −Y direction so that the side end faces the same. At this time, the mask stage MS
T moves only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. And
The mask M and the photosensitive substrate P are moved by -X with respect to the projection optical system PL.
The mask M is illuminated with the exposure light EL while moving synchronously in the direction, so that the pattern forming area PA5 is exposed. FIG. 13B shows the pattern formation area PA.
5 shows a state after the scanning exposure for No. 5 is completed.

Next, after correcting the image characteristics based on the correction parameters, the control device CONT performs an exposure process on the pattern forming area PA6 (step SB15).
That is, as shown in FIG.
T is + X of the projection optical system PL and the pattern formation area PA6.
The substrate stage PST is step-moved in the −Y direction so that the side end faces the same. Also at this time, the mask stage M
ST moves only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern formation area PA6 is exposed. FIG. 13D shows a state after the scanning exposure for the pattern formation area PA6 is completed.

The detection of the position of the substrate stage PST in the X-axis direction in steps SB9 to SB15 is performed by the laser interferometers Px1 and Px2, and the detection of the position in the Y-axis direction is performed by the laser interferometer Py2. Then, the control device CONT switches the laser interferometer to be used from Py2 to Py3 (step SB16).

Next, as shown in FIG. 14A, the control unit CONT moves the substrate stage PST to move the alignment marks m1 to m6 in the fifth row from the −X side provided on the photosensitive substrate P. And alignment system AL1
Face each of AL6. Lightment type AL1
AL6 is the alignment mark m1 in the fifth row from the -X side
, The alignment marks m1 to m6 respectively corresponding to the plurality of pattern forming areas (exposure areas) PA7 to PA9 arranged in the Y-axis direction are simultaneously detected in a state facing each of the alignment marks m1 to m6 (step SB17). At this time, the laser interferometer Py3 is operated, and the difference between the laser interferometers Py2 and Py3 is stored as the offset 2. Thereafter, the substrate stage PST coordinates are obtained from the measured values of the laser interferometer Py3 and the offsets 1 and 2.

Next, as shown in FIG. 14B, the control device CONT moves the substrate stage PST in the −X direction, and the alignment marks m1 in the sixth row from the −X side provided on the photosensitive substrate P. To m6 and the alignment systems AL1 to AL6 are opposed to each other, and each of these alignment marks m1 to m6 is simultaneously detected (step SB18).

The control unit CONT controls the pattern formation area P
The positions of the alignment marks in the fifth row and the alignment marks in the sixth row are detected at two locations separated by a predetermined distance in the X-axis direction with respect to each of A7 to PA9, and based on these detection results, each pattern forming area PA7 is detected. Correction parameters for correcting image characteristics such as shift, scaling, and rotation for PA9 are obtained (step SB1).
9).

Here, when the photosensitive substrate P scans with respect to the alignment unit U to detect the alignment marks in the sixth row after the alignment marks in the fifth row, a plurality of substrates arranged in the Y-axis direction are detected. AF detection system 60a-6
0 g each detect the height position of the surface of the photosensitive substrate P at a predetermined distance interval in the X-axis direction. The detection results of each of these substrate AF detection systems 60a to 60g are stored in the control device CO.
The control device CONT outputs the signal to the substrate AF detection system 6.
The surface shape of each of the pattern forming areas PA7 to PA9 of the photosensitive substrate P is obtained based on the detection results of 0a to 60g (step SB20).

Next, the control unit CONT executes step S
After correcting the image characteristics based on the correction parameters obtained in B18, exposure processing is performed on the pattern formation area PA7 (step SB21). That is, as shown in FIG. 14C, the control device CONT moves the substrate stage PST such that the projection optical system PL and the + X side end of the pattern formation area PA7 face each other. Then, the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, and the mask M is illuminated with the exposure light EL, whereby the pattern forming area PA7 is exposed. FIG. 14D shows a state after the scanning exposure for the pattern formation area PA7 is completed. Here, the photosensitive substrate P (pattern formation region P) obtained in step SB19 is used.
Based on the surface shape data of A7), the substrate stage PST is moved in the Z-axis direction or the θX and θY directions so that the image plane of the projection optical system and the surface of the photosensitive substrate P coincide with each other. Scanning exposure is performed while controlling the attitude of the camera.

Next, after correcting the image characteristics based on the correction parameters, the control device CONT performs an exposure process on the pattern forming area PA8 (step SB22).
That is, as shown in FIG.
T is -X of the projection optical system PL and the pattern formation area PA8.
The substrate stage PST is step-moved in the −Y direction so that the side end faces the same. At this time, the mask stage MS
T moves only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. And
The mask M and the photosensitive substrate P are moved by -X with respect to the projection optical system PL.
By illuminating the mask M with the exposure light EL while moving synchronously in the direction, an exposure process is performed on the pattern formation region PA8. FIG. 15B shows the pattern formation area PA.
8 shows a state after the scanning exposure for 8 is completed.

Next, after correcting the image characteristics based on the correction parameters, the control device CONT performs an exposure process on the pattern formation area PA9 (step SB23).
That is, as shown in FIG.
T is + X of the projection optical system PL and the pattern formation area PA9.
The substrate stage PST is step-moved in the −Y direction so that the side end faces the same. Also at this time, the mask stage M
ST moves only slightly to align the mask M and the photosensitive substrate P, and hardly needs to move. Then, the mask M is illuminated with the exposure light EL while the mask M and the photosensitive substrate P are synchronously moved in the + X direction with respect to the projection optical system PL, so that the pattern forming area PA9 is exposed. FIG. 15D shows a state after the scanning exposure for the pattern formation area PA9 is completed.

The detection of the position of the substrate stage PST in the X-axis direction in steps SB17 to SB23 is performed by the laser interferometers Px1 and Px2, and the detection of the position in the Y-axis direction is performed by the laser interferometer Py3.

As described above, since six alignment systems AL are arranged in the X-axis direction which is the non-scanning direction intersecting the Y-axis direction which is the scanning direction of the mask M and the photosensitive substrate P, the detection is performed. Alignment marks m1 to m to be
The number of detection operations of the alignment marks m1 to m6 can be reduced as compared with the related art without reducing the number of the alignment marks m6. Therefore, the alignment processing time can be reduced while maintaining the alignment accuracy.

In the present embodiment, there are six alignment systems AL1 to AL6. However, it is sufficient that at least three alignment systems are arranged in the Y-axis direction, thereby reducing the number of alignment marks without reducing the number of alignment marks. The number of mark detection operations can be reduced. The plurality of alignment systems arranged side by side are used to simultaneously measure the respective alignment marks of the plurality of pattern formation regions, so that the throughput can be improved.

The alignment system AL in this embodiment is an off-axis type alignment system. Therefore, since the mask alignment mark is not directly detected as compared with the TTL type alignment system that simultaneously measures the mask alignment mark and the substrate alignment mark via the projection optical system PL, the alignment system AL
Outer two alignment systems AL1 of 1 to AL6,
The interval between AL6 is the width of mask M (length in Y-axis direction)
Can be set larger. Therefore, alignment system A
The arrangement of L1 to AL6 can be freely set regardless of the width of the mask M.

Since the detection of the alignment mark is performed at two points separated by a predetermined distance in the X-axis direction with respect to one pattern formation area, it is possible to perform an accurate alignment process based on the mark detection results. it can. The alignment mark detection may be performed at at least two locations separated by a predetermined distance in the X-axis direction, and may be performed at three or more arbitrary multiple locations. The alignment accuracy can be improved by setting a large number of detection positions for alignment mark detection.

When scanning exposure is performed on each of the pattern forming regions adjacent in the Y-axis direction, the scanning exposure process is performed by synchronous movement in the opposite directions to each other. Mask (mask stage) when performing exposure processing on the formation area
Since it is not necessary to move the mask largely, the time for moving the mask can be reduced, so that the throughput can be improved. In the embodiment, Py1 →→ at the timing of the alignment.
The interferometer was switched from Py2, Py2 to Py3,
Any position where the two interferometers can operate is acceptable,
It may be during the exposure or at the end point of the exposure. By doing so, it is possible to perform exposure with good alignment accuracy even for exposure of the first layer that does not require alignment. In the measurement of the offset, the accuracy can be improved by repeating the measurement a plurality of times and averaging. In addition, averaging is 0.1 to 0.2 sec.
The effect is great when the above is performed.

As described above, it is preferable that alignment marks are provided at, for example, four corners in one pattern formation region. Since four alignment marks are provided for one pattern formation region, image characteristics such as shift, scaling, rotation, and orthogonality can be obtained with high accuracy, and alignment processing can be performed with high accuracy. At least two alignment systems are arranged in the Y-axis direction for each of the pattern forming regions so that two alignment marks arranged in the Y-axis direction among the alignment marks provided at the four corners can be measured simultaneously. Is preferred. However, since the size and number of pattern formation regions set on the photosensitive substrate P are appropriately changed depending on the device to be manufactured, two alignment systems are arranged in one pattern formation region depending on the arrangement of the alignment systems. May not be done. However, by optimizing the interval of the alignment system using the width (length in the Y-axis direction) L of the photosensitive substrate P as a parameter, even if the size and the number of the pattern formation regions are changed, one pattern formation region Thus, two alignment systems can be arranged.

For example, if the alignment system AL is AL1-A
When the number is L6, the distance between the alignment systems AL1 and AL2 ≦ (2/7) × L (1) the distance between the alignment systems AL3 and AL4 ≦ (1/5) × L (2) · Interval between alignment systems AL5 and AL6 ≤ (2/7) × L (3) · Interval between alignment systems AL1 and AL6 ≤ L ... (4) Alignment systems AL1 to AL satisfying each condition
By setting the arrangement of 6, even if the size and number of the pattern formation regions are changed, two alignment systems can be arranged for one pattern formation region.

This will be described with reference to FIG. FIG. 18A1 shows a photosensitive substrate P having a width L in the Y-axis direction divided into two in the Y-axis direction and two in the X-axis direction, for a total of four.
FIG. 9 is a diagram illustrating a case where one pattern formation region is set and a screen (pattern) is formed in each of the four pattern formation regions. Here, the mask M shown in FIG. 18A2 is used for the exposure processing. "No. 1" for the mask M
A pattern is formed. In FIG. 18 (a1), a white circle “が” indicates an alignment system used. In this example, alignment systems AL1 and AL3 are used for the pattern formation region PA2, and the pattern formation region PA1 is used.
, Alignment systems AL4 and AL6 are used.
Here, alignment systems AL1 to AL6 are provided on the photosensitive substrate P.
Are formed. Since the alignment systems AL1 to AL6 are arranged so as to satisfy the above expressions (1) to (4), at least two alignment systems for one pattern formation region, and three alignment systems in the example of FIG. Is arranged. Here, the width of each pattern formation region in the Y-axis direction is the same.

FIG. 18 (b1) shows that the photosensitive substrate P having a width L is
It is a figure which shows the case where it divides into three in an axial direction, and divides into two in an X-axis direction, sets a total of six pattern formation areas, and forms a screen (pattern) in each of these six pattern formation areas. Here, the mask M shown in FIG. 18B2 is used for the exposure processing. The “No. 1” pattern is formed on the mask M. In the example shown in FIG. 18 (b1), the alignment systems AL1, A
L2 is used, alignment systems AL3 and AL4 are used for pattern formation area PA2, and alignment systems AL5 and AL6 are used for pattern formation area PA1. Also in this case, since the alignment systems AL1 to AL6 are arranged so as to satisfy the above equations (1) to (4), two alignment systems are arranged for one pattern formation region. Here, Y of each pattern formation region
The width in the axial direction is the same.

FIG. 18 (c1) shows that the photosensitive substrate P having a width L is
FIG. 9 is a diagram illustrating a case where the pattern is divided into three in the axial direction and two in the X-axis direction, and a total of six pattern forming regions are set. here,
The mask M shown in FIG. 18 (c2) is used for the exposure processing. The mask M includes a “No. 1” pattern and a “No.
2 "pattern. Then, “No. 1” is assigned to each of the pattern formation areas PA1 to PA6.
The pattern and the “No. 2” pattern are appropriately transferred, and five screens (patterns) are formed in the Y-axis direction and two in the X-axis direction, for a total of ten screens (patterns). In the example shown in FIG. 18C1, “No. 1” is assigned to the pattern formation area PA3.
The pattern and the “No. 2” pattern are formed at the same time,
At this time, alignment systems AL1 and AL2 are used.
Then, “No. 1” is applied to the pattern formation area PA2.
A pattern is formed. At this time, the alignment system AL3,
AL4 is used. In forming the “No. 1” pattern in the pattern formation area PA2, the illumination optical system I
The illumination of the exposure light for the “No. 2” pattern is cut off by a blind (illumination area setting device) provided in L, and only the “No. 1” pattern of the mask M is formed in the pattern formation area PA3. Here, alignment system A
Since the interval between L3 and AL4 is set as in the above equation (2), these two alignment systems AL3 and AL4
L4 can be arranged with respect to the pattern formation area PA2. Then, “No.
The “No. 1” pattern and the “No. 2” pattern are formed simultaneously, and at this time, alignment systems AL5 and AL6 are used. Also in this case, since the alignment systems AL1 to AL6 are arranged so as to satisfy the above equations (1) to (4), two alignment systems are arranged for one pattern formation region.

FIG. 18 (d1) shows that the photosensitive substrate P having the width L is Y
FIG. 9 is a diagram illustrating a case where the pattern is divided into three in the axial direction and two in the X-axis direction, and a total of six pattern forming regions are set. here,
The mask M shown in FIG. 18D2 is used for the exposure processing. The mask M includes a “No. 1” pattern and a “No.
2 "and" No. 3 "patterns. Then, the “No. 1” pattern, the “No. 2” pattern, and the “No. 3” pattern are appropriately transferred to each of the pattern formation areas PA1 to PA6,
Seventeen screens (patterns) are formed, seven in the Y-axis direction and two in the X-axis direction. In the example shown in FIG. 18D1, the “No. 2” pattern and the “No. 3” pattern are simultaneously formed in the pattern formation area PA3, and at this time, the alignment systems AL1 and AL2 are used. Note that “No. 2” and “No.
In forming the “3” pattern, the illumination of the exposure light for the “No. 1” pattern is blocked by blinds or the like, and only the “No. 2” and “No. 3” patterns of the mask M are formed in the pattern formation area PA3. You. Then, a “No. 1” pattern, a “No. 2” pattern, and a “No. 3” pattern are formed in the pattern forming area PA2, and the alignment systems AL3 and AL4 are used at this time. Then, for the pattern formation area PA1, "N
o. The “No. 1” pattern and the “No. 2” pattern are formed simultaneously, and at this time, alignment systems AL5 and AL6 are used. Note that “No.
In forming the “No. 1” and “No. 2” patterns, the illumination of the exposure light for the “No. 3” pattern is blocked by blinds or the like. Also in this case, the alignment system AL1
Since AL6 are arranged so as to satisfy the above equations (1) to (4), two alignment systems are arranged for one pattern formation region.

In the above embodiment, the alignment mark m
1 to m6 are arranged at predetermined intervals in the X-axis direction. As shown in FIG.
1 and the alignment mark m3 associated with the pattern formation area PA3
3, m43 may be arranged in the Y-axis direction.
Similarly, the alignment marks m12 and m22 associated with the pattern formation area PA2 and the alignment marks m14 and m24 associated with the pattern formation area PA4 may be arranged in the Y-axis direction, or the pattern formation area PA
3 and the alignment mark m3 associated with the pattern formation area PA5.
5, m45 may be arranged in the Y-axis direction, or alignment marks m14, m24 associated with the pattern formation area PA4 and alignment marks m16, m26 associated with the pattern formation area PA6 may be aligned in the Y-axis direction. They may be arranged side by side. Then, of the plurality of alignment marks arranged in the Y-axis direction, two adjacent alignment marks are replaced with one alignment system AL1.
The detection may be performed simultaneously in each of the AL4s.
That is, alignment system AL1 simultaneously detects alignment marks m12 and m14 in its measurement area, alignment system AL2 simultaneously detects alignment marks m22 and m24 in its measurement area, and alignment system AL1
3 is the measurement area and alignment marks m31 and m33
Are simultaneously detected, and the alignment system AL4 simultaneously detects the alignment marks m41 and m43 in the measurement area. By doing so, the number of alignment mark detection operations can be reduced, and the throughput can be improved. Further, in this case, the width of the pattern formation region may be set to be narrow. Then, when performing the exposure processing, the control device CO
The NT first detects each of the alignment marks in the first column from the -X side with the alignment systems AL1 to AL4, and then detects each of the alignment marks in the second column with the alignment systems AL1 to AL4. And the control device C
The ONT performs the exposure processing on the pattern formation area PA1 while scanning the photosensitive substrate P in the + X direction, and then performs the exposure processing on the pattern formation area P1 while scanning the photosensitive substrate P in the −X direction.
The exposure process for A2 is performed. Hereinafter, similarly, after detecting the alignment marks in the third and fourth columns, the control device CONT performs an exposure process on the pattern formation area PA3 while scanning the photosensitive substrate P in the + X direction. Exposure processing is performed on the pattern formation area PA4 while scanning P in the −X direction. Further, the control device C
After detecting the alignment marks on the fifth and sixth columns, the ONT performs an exposure process on the pattern formation area PA5 while scanning the photosensitive substrate P in the + X direction.
Exposure processing is performed on the pattern formation area PA6 while scanning the photosensitive substrate P in the −X direction.

The distance between the alignment marks m1 to m6 formed on the photosensitive substrate P depends on the alignment system AL1 to AL6.
Although set according to the arrangement (interval) of the AL6, an alignment system can be provided so as to be movable in the Y-axis direction, and the interval between the alignment systems can be changed.

The exposure apparatus EX in the above embodiment is used.
Is a so-called multi-lens scanning type exposure apparatus having a plurality of projection optical systems adjacent to each other, but the present invention can be applied to a scanning type exposure apparatus having one projection optical system.

The application of the exposure apparatus EX is not limited to an exposure apparatus for a liquid crystal for exposing a liquid crystal display element pattern to a square glass plate. It can be widely applied to an exposure apparatus for manufacturing the same.

The light source of the exposure apparatus EX of this embodiment includes g-line (436 nm), h-line (405 nm), and i-line (365n).
m) as well as a KrF excimer laser (248n
m), an ArF excimer laser (193 nm) and an F ₂ laser (157 nm) can be used.

The magnification of the projection optical system PL is not limited to the same magnification system, but may be any of a reduction system and an enlargement system.

[0099] As the projection optical system PL, using a material which transmits far ultraviolet rays such as quartz and fluorite as the glass material when using a far ultraviolet ray such as an excimer laser, catadioptric or refractive system when using a F ₂ laser Optical system.

The substrate stage PST and the mask stage MS
When a linear motor is used for T, any of an air levitation type using an air bearing and a magnetic levitation type using Lorentz force or reactance force may be used. Also,
The stage may be a type that moves along a guide or a guideless type that does not have a guide.

When a plane motor is used as the stage driving device, one of the magnet unit and the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is placed on the moving surface side (base) of the stage. It may be provided.

The reaction force generated by the movement of the substrate stage PST may be mechanically released to the floor (ground) by using a frame member as described in Japanese Patent Application Laid-Open No. 8-166475. The present invention is also applicable to an exposure apparatus having such a structure.

As described in JP-A-8-330224, the reaction force generated by the movement of the mask stage MST is mechanically moved to the floor (ground) using a frame member.
You may escape to The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the exposure apparatus according to the embodiment of the present invention converts various subsystems including the components described in the claims of the present application into predetermined mechanical accuracy, electrical accuracy,
It is manufactured by assembling to maintain optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electrical systems before and after this assembly to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the various subsystems into the exposure apparatus includes mechanical connection, wiring connection of an electric circuit, and piping connection of a pneumatic circuit between the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the exposure apparatus be manufactured in a clean room in which the temperature, cleanliness, and the like are controlled.

The semiconductor device is as shown in FIG.
Step 201 for designing the function and performance of the device, step 202 for manufacturing a mask (reticle) based on the design step, and a substrate (wafer,
Step 203 of manufacturing a glass plate), a substrate processing step 204 of exposing a reticle pattern to the substrate by the exposure apparatus of the above-described embodiment, and developing the exposed substrate, a device assembling step (dicing step,
(Including a bonding process and a packaging process) 205, an inspection step 206, and the like.

[0106]

As described above, since at least three alignment systems are arranged in the non-scanning direction with respect to the mask and the substrate scanning in a predetermined direction, alignment can be performed without reducing the number of alignment marks to be detected. The number of mark detection operations can be reduced. Therefore, the alignment processing time can be reduced while maintaining the alignment accuracy, and the throughput of the exposure processing can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing an embodiment of an exposure apparatus of the present invention.

FIG. 2 is a schematic configuration diagram of FIG.

FIG. 3 is a diagram showing a filter.

FIG. 4 is a schematic perspective view showing an alignment unit provided with an alignment system.

FIG. 5 is a diagram for explaining the arrangement of an alignment system and an AF detection system.

FIG. 6 is a schematic configuration diagram of an alignment system.

FIG. 7 is a schematic configuration diagram of an AF detection system.

FIG. 8 is a diagram for explaining a baseline measurement procedure.

FIG. 9 is a diagram for explaining the exposure method of the present invention.

FIG. 10 is a diagram for explaining the exposure method of the present invention.

FIG. 11 is a diagram for explaining the exposure method of the present invention.

FIG. 12 is a diagram for explaining the exposure method of the present invention.

FIG. 13 is a view for explaining the exposure method of the present invention.

FIG. 14 is a diagram for explaining the exposure method of the present invention.

FIG. 15 is a diagram for explaining the exposure method of the present invention.

FIG. 16 is a flowchart for explaining the exposure method of the present invention.

FIG. 17 is a flowchart for explaining the exposure method of the present invention.

FIG. 18 is a diagram illustrating an example of the arrangement of an alignment system.

FIG. 19 is a view showing another embodiment of the exposure method of the present invention.

FIG. 20 is a flowchart illustrating an example of a semiconductor device manufacturing process.

FIG. 21 is a perspective view showing a conventional exposure apparatus.

FIG. 22 is a view for explaining a conventional exposure method.

FIG. 23 is a view for explaining a conventional exposure method.

FIG. 24 is a view for explaining a conventional exposure method.

[Explanation of symbols]

60 (60a-60g) Substrate-side AF detection system 70 (70a to 70d) Mask side AF detection system AL (AL1 to AL6) Alignment system EX exposure equipment M mask m1 to m6 alignment mark P Photosensitive substrate (substrate) PA1 to PA9 Pattern formation area (exposure area) PL (PLa-PLg) Projection optical system

   ────────────────────────────────────────────────── ─── Continuation of front page    F term (reference) 2F065 AA01 AA07 AA14 AA20 BB02                       BB27 CC20 DD06 FF04 GG02                       JJ03 JJ05 JJ26 LL00 LL01                       LL12 LL26 LL33 LL37 MM03                       PP12 QQ28 QQ31 TT08                 5F046 BA05 CB12 CB25 EB07 FA05                       FA10 FA17 FB10 FB12 FC06

Claims (12)

[Claims] An exposure method for exposing a pattern of the mask on the substrate while synchronously moving the mask and the substrate in a first direction, wherein the plurality of alignment marks provided on the substrate are respectively A plurality of alignment systems facing each other and arranged at least three in a second direction intersecting the first direction detect the plurality of alignment marks,
An exposure method comprising: positioning the mask and the substrate based on the detection result. 2. The exposure method according to claim 1, wherein the position of the substrate is detected at at least two locations separated by a predetermined distance in the first direction from an exposure area where the exposure is performed. . 3. A plurality of exposure regions for exposing the substrate are arranged in the second direction, and
3. The method according to claim 1, wherein each of the alignment marks corresponding to the plurality of exposure areas is simultaneously detected.
Exposure method according to the above. 4. A method according to claim 1, wherein a plurality of exposure areas for exposing said substrate are arranged in said second direction, and said plurality of alignment marks are detected in at least two places in said first direction corresponding to said exposure areas. The exposure method according to any one of claims 1 to 3, wherein the substrate is exposed by synchronous movement in opposite directions in a plurality of adjacent exposure regions. 5. An exposure apparatus for exposing a pattern of the mask on the substrate while synchronously moving the mask and the substrate in a first direction, wherein each of the alignment marks provided at a plurality of positions on the substrate is provided. And a plurality of alignment systems that detect
An exposure apparatus, wherein at least three are arranged side by side in the direction of. 6. The exposure apparatus according to claim 5, wherein a distance between two outer sides of the plurality of alignment systems is substantially equal to a length of the substrate in the second direction. 7. The exposure apparatus according to claim 5, wherein a distance between two outer sides of the plurality of alignment systems is longer than a length of the mask in the second direction. 8. An AF detection system for detecting a position in a direction perpendicular to an exposure surface of the substrate is provided adjacent to two outer sides of the plurality of alignment systems, respectively. The exposure apparatus according to any one of claims 5 to 7. 9. A plurality of exposure areas for exposing the substrate are arranged in the second direction, and at least two of the plurality of alignment systems are arranged corresponding to each of the plurality of exposure areas. Claim 5 characterized by the following.
9. The exposure apparatus according to claim 8, 10. A plurality of projection optical systems, different from the plurality of alignment systems, for projecting the pattern of the mask onto the substrate, wherein at least one of the plurality of alignment systems is the plurality of projection optical systems. The exposure apparatus according to any one of claims 5 to 9, wherein the exposure apparatus is arranged between the exposure apparatuses. 11. The exposure apparatus according to claim 5, wherein an interval between adjacent ones of the plurality of alignment systems is equal to or less than 2/7 of a length of the substrate in the second direction. . 12. A device pattern drawn on the mask using the exposure method according to any one of claims 1 to 4, or the exposure apparatus according to any one of claims 5 to 11. A step of exposing the substrate to light and a step of developing the exposed substrate.