WO2010113525A1

WO2010113525A1 - Exposure apparatus, exposure method and device manufacturing method

Info

Publication number: WO2010113525A1
Application number: PCT/JP2010/002432
Authority: WO
Inventors: 加藤正紀; 戸口学
Original assignee: 株式会社ニコン
Priority date: 2009-04-03
Filing date: 2010-04-02
Publication date: 2010-10-07
Also published as: TWI502283B; JP5429283B2; KR20120006988A; JPWO2010113525A1; TW201040673A

Abstract

Provided is an exposure apparatus wherein a plurality of substrate regions to be exposed are sequentially exposed to exposure light, while moving the substrate in the scanning direction with respect to the radiation region where exposure light can be radiated. The exposure apparatus is provided with: a substrate stage, which holds the substrate to the radiation region and can move to one side in the scanning direction in an accelerating state between a first position and a second position in the scanning direction, in a stabilized state in the vicinity of the second position, and in a constant-speed state between the second position and a third position; and an alignment system which has a detection region where an alignment mark, which is on the substrate and is adjacent to a first exposure target region to be exposed first among a plurality of exposure regions to be exposed, can be placed on the other side with respect to the radiation region in the scanning direction, at a position at least at a distance between the first position and the second position, and derives the position of the first exposure target region.

Description

Exposure apparatus, exposure method, and device manufacturing method

The present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method.

For example, in an electronic device manufacturing process such as a flat panel display, an exposure apparatus that exposes a substrate with exposure light is used. As disclosed in the following patent document, the exposure apparatus includes an alignment system capable of deriving the position of the substrate, performs an alignment process using the alignment system, and exposes the substrate.

JP 2003-347184 A

In the exposure apparatus, if the time required for the alignment process becomes long, the throughput may decrease and the productivity of the device may decrease.

An object of an aspect of the present invention is to provide an exposure apparatus and an exposure method that can suppress a decrease in throughput. Moreover, the aspect of this invention aims at providing the device manufacturing method which can suppress the fall of productivity.

According to a first aspect of the present invention, there is provided an exposure apparatus that sequentially exposes a plurality of exposure target areas of the substrate with exposure light while moving the substrate in a scanning direction with respect to an irradiation area that can be irradiated with exposure light. The irradiation region in an acceleration state between the first position and the second position in the scanning direction, in a settling state in the vicinity of the second position, and in a constant speed state between the second position and the third position. A substrate stage that can move to one side with respect to the scanning direction while holding the substrate, and at least the first position and the second position on the other side with respect to the irradiation region with respect to the scanning direction. Of the plurality of exposure target areas, the detection area in which the alignment mark on the substrate adjacent to the first exposure target area to be exposed can be arranged, and the first exposure. Territory An alignment system for deriving a position, an exposure apparatus equipped with is provided.

According to the second aspect of the present invention, the exposure apparatus of the first aspect is used to expose the substrate coated with a photosensitive agent and to develop the photosensitive agent exposed by the exposure of the substrate. Then, there is provided a device manufacturing method including forming an exposure pattern layer and processing the substrate through the exposure pattern layer.

According to a third aspect of the present invention, there is provided an exposure method for sequentially exposing a plurality of exposure target regions of the substrate with exposure light while moving the substrate in a scanning direction with respect to an irradiation region that can be irradiated with exposure light. , Executing a first exposure process for sequentially exposing a plurality of exposure target areas while irradiating the irradiation area with the exposure light, and performing the first exposure process on a detection area of an alignment system Alignment marks are arranged on the substrate to perform alignment processing for deriving the position of the exposure target region, and the first exposure processing and the alignment processing are performed while irradiating the irradiation light with the exposure light. Performing a second exposure process that sequentially exposes the plurality of exposure target areas on the substrate that has been subjected to the first exposure process among the plurality of exposure target areas. A moving direction related to the scanning direction when exposing the first exposure target area to be exposed first, and a moving direction related to the scanning direction when exposing the first exposure target area exposed first in the second exposure process. Are provided that are the same.

According to the fourth aspect of the present invention, the exposure method of the third aspect is used to expose the substrate coated with a photosensitive agent, and to develop the photosensitive agent exposed by the exposure of the substrate. Then, there is provided a device manufacturing method including forming an exposure pattern layer and processing the substrate through the exposure pattern layer.

According to the aspect of the present invention, it is possible to suppress a decrease in throughput and suppress a decrease in device productivity.

It is a schematic block diagram which shows an example of the exposure apparatus which concerns on 1st Embodiment. It is a perspective view which shows an example of the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows an example of the projection system and substrate stage which concern on 1st Embodiment. It is a schematic diagram which shows an example of the positional relationship between the projection area | region which concerns on 1st Embodiment, a detection area | region, and a board | substrate. It is a flowchart which shows an example of the exposure method which concerns on 1st Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 1st Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 1st Embodiment. It is a schematic diagram for demonstrating the relationship between the projection area | region and detection area which concern on 1st Embodiment. It is a schematic diagram which shows an example of the positional relationship between the projection area | region which concerns on 2nd Embodiment, a detection area | region, and a board | substrate. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 2nd Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 2nd Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 2nd Embodiment. It is a schematic diagram which shows an example of the positional relationship between the projection area | region which concerns on 2nd Embodiment, a detection area | region, and a board | substrate. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 3rd Embodiment. It is a figure which shows an example of operation | movement of the exposure apparatus which concerns on 4th Embodiment. It is a flowchart for demonstrating an example of the manufacturing process of a microdevice.

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each part will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

<First Embodiment>
A first embodiment will be described. FIG. 1 is a schematic block diagram showing an example of an exposure apparatus EX according to the first embodiment, and FIG. 2 is a perspective view. 1 and 2, an exposure apparatus EX includes a mask stage 1 that can move while holding a mask M, a substrate stage 2 that can move while holding a substrate P, and a drive system 3 that moves the mask stage 1. A driving system 4 that moves the substrate stage 2, an illumination system IS that illuminates the mask M with the exposure light EL, a projection system PS that projects an image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P, And a control device 5 for controlling the overall operation of the exposure apparatus EX.

The mask M includes a reticle on which a device pattern projected onto the substrate P is formed. The substrate P includes, for example, a base material such as a glass plate and a photosensitive film (coated photosensitizer) formed on the base material. In the present embodiment, the substrate P includes a large glass plate called mother glass, and the size of one side of the substrate P is, for example, 500 mm or more. In the present embodiment, a rectangular glass plate having a side of about 3000 mm is used as the base material of the substrate P.

Further, the exposure apparatus EX of the present embodiment includes an interferometer system 6 that measures the positions of the mask stage 1 and the substrate stage 2, and a first detection system 7 that detects the position of the surface (lower surface, pattern formation surface) of the mask M. And a second detection system 8 that detects the position of the surface (exposed surface, photosensitive surface) of the substrate P, and an alignment system 9 that detects an alignment mark on the substrate P.

Further, the exposure apparatus EX includes a body 13. The body 13 includes, for example, a base plate 10 disposed on a support surface (for example, floor surface) FL in a clean room via a vibration isolation table BL, a first column 11 disposed on the base plate 10, and a first column 11 And a second column 12 disposed on the surface. In the present embodiment, the body 13 supports each of the projection system PS, the mask stage 1 and the substrate stage 2. In the present embodiment, the projection system PS is supported by the first column 11 via the surface plate 14. The mask stage 1 is supported so as to be movable with respect to the second column 12. The substrate stage 2 is supported so as to be movable with respect to the base plate 10.

In the present embodiment, the projection system PS has a plurality of projection optical systems. The illumination system IS has a plurality of illumination modules corresponding to a plurality of projection optical systems. Further, the exposure apparatus EX of the present embodiment projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction. That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens scan exposure apparatus.

In the present embodiment, the projection system PS has seven projection optical systems PL1 to PL7, and the illumination system LS has seven illumination modules IL1 to IL7. The number of projection optical systems and illumination modules is not limited to seven. For example, the projection system PS may have 11 projection optical systems, and the illumination system IS may have 11 illumination modules.

The illumination system IS can irradiate the exposure light EL to a predetermined illumination area. The illumination area is an irradiation area where the exposure light EL emitted from each of the illumination modules IL1 to IL7 can be irradiated. In the present embodiment, the illumination system IS illuminates each of the seven different illumination areas with the exposure light EL. The illumination system IS illuminates a portion of the mask M arranged in the illumination area with the exposure light EL having a uniform illuminance distribution. In the present embodiment, bright lines (g line, h line, i line) emitted from the mercury lamp 17 are used as the exposure light EL emitted from the illumination system IS.

The mask stage 1 is movable with respect to the illumination area while holding the mask M. The mask stage 1 holds the mask M so that the lower surface (pattern formation surface) of the mask M and the XY plane are substantially parallel. The drive system 3 includes, for example, a linear motor, and can move the mask stage 1 on the guide surface 12G of the second column 12. In the present embodiment, the mask stage 1 can be moved in the three directions of the X axis, the Y axis, and the θZ direction on the guide surface 12G while holding the mask M by the operation of the drive system 3.

Projection system PS can irradiate exposure light EL to a predetermined projection area. The projection area is an irradiation area where the exposure light EL emitted from each of the projection optical systems PL1 to PL7 can be irradiated. In the present embodiment, the projection system PS projects a pattern image on each of seven different projection regions PR1 to PR7. The projection optical system PS projects an image of the pattern of the mask M on the portion of the substrate P arranged in the projection areas PR1 to PR7 with a predetermined projection magnification.

The substrate stage 2 is movable with respect to the projection regions PR1 to PR7 while holding the substrate P. The substrate stage 2 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel. The drive system 4 includes, for example, a linear motor, and can move the substrate stage 2 on the guide surface 10 G of the base plate 10. In the present embodiment, the substrate stage 2 has six substrates in the X axis, Y axis, Z axis, θX, θY, and θZ directions on the guide surface 10G while holding the substrate P by the operation of the drive system 4. It can move in the direction.

During the exposure of the substrate P, the control device 5 controls the mask stage 1 and the substrate stage 2 to move the mask M and the substrate P in a predetermined scanning direction in the XY plane intersecting the optical path of the exposure light EL. In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the X-axis direction, and the scanning direction (synchronous movement direction) of the mask M is also the X-axis direction. The control device 5 moves the substrate P in the X-axis direction relative to the projection regions PR1 to PR7 of the projection system PS, and in the illumination region of the illumination system IS in synchronization with the movement of the substrate P in the X-axis direction. On the other hand, the substrate P is irradiated with the exposure light EL through the projection system PS while moving the mask M in the X-axis direction. Thereby, the pattern image of the mask M is projected onto the substrate P, and the substrate P is exposed with the exposure light EL.

FIG. 3 is a diagram showing an example of the projection system PS, the first detection system 7, the second detection system 8, the alignment system 9, and the substrate stage 2 arranged in the projection regions PR1 to PR7 according to the present embodiment.

As shown in FIGS. 2 and 3, a reference member 43 is arranged on the upper surface of the substrate stage 2. The upper surface 44 of the reference member 43 is disposed in substantially the same plane as the surface of the substrate P held on the substrate stage 2. Further, a transmissive portion 45 that can transmit the exposure light EL is disposed on the upper surface 44 of the reference member 43. Below the reference member 43, a light receiving device 46 capable of receiving the light transmitted through the transmitting portion 45 is disposed. The light receiving device 46 includes a lens system 47 on which light that has passed through the transmission unit 45 enters, and an optical sensor 48 that receives the light that has passed through the lens system 47. In the present embodiment, the optical sensor 48 includes an image sensor (CCD). The optical sensor 48 outputs a signal corresponding to the received light to the control device 5.

In the present embodiment, the transmission part 45 functions as a reference mark. Note that a mark disposed at a predetermined position with respect to the transmission portion 45 may be provided on the upper surface 44 of the reference member 43, and the mark may be used as the reference mark.

Next, the interferometer system 6, the first and

second detection systems

7, 8 and the alignment system 9 will be described. 1 and 2, the interferometer system 6 includes a laser interferometer unit 6 A that measures the position of the mask stage 1 and a laser interferometer unit 6 B that measures the position of the substrate stage 2. The laser interferometer unit 6 A can measure the position of the mask stage 1 using a measurement mirror arranged on the mask stage 1. The laser interferometer unit 6 B can measure the position of the substrate stage 2 using a measurement mirror arranged on the substrate stage 2. In the present embodiment, the interferometer system 6 can measure position information of the mask stage 1 and the substrate stage 2 with respect to the X axis, Y axis, and θX directions using the

laser interferometer units

6A and 6B.

The first detection system 7 detects the position of the lower surface (pattern formation surface) of the mask M in the Z-axis direction. The first detection system 7 is a so-called oblique incidence type multi-point focus / leveling detection system. The second detection system 8 detects the position of the surface (exposure surface) of the substrate P in the Z-axis direction. The second detection system 8 is a so-called oblique incidence type multi-point focus / leveling detection system.

The alignment system 9 detects an alignment mark provided on the substrate P. In the present embodiment, the alignment system 9 includes a first alignment system 91 disposed on the −X side with respect to the X-axis direction (scanning direction) with respect to the projection system PS, and a second alignment system 92 disposed on the + X side. Have

The first and

second alignment systems

91 and 92 are so-called off-axis type alignment systems. As shown in FIG. 3, the first alignment system 91 corresponds to a plurality of detectors 91A to 91F arranged to face the surface of the substrate P held on the substrate stage 2, and to the detectors 91A to 91F. It has a plurality of detection areas SA1 to SA6 arranged in the axial direction. The second alignment system 92 includes a plurality of

detectors

92A and 92B arranged to face the surface of the substrate P held on the substrate stage 2, and a plurality of

detectors

92A and 92B arranged in the Y-axis direction. Detection areas SB1 and SB2.

Each of detectors 91A to 91F, 92A and 92B includes a projection unit for irradiating detection light to detection areas SA1 to SA6, SB1 and SB2, and an optical image of alignment marks arranged in detection areas SA1 to SA6, SB1 and SB2. And a light receiving unit capable of acquiring Each of the plurality of detectors 91A to 91F, 92A and 92B can detect alignment marks on the substrate P arranged in the detection areas SA1 to SA6, SB1 and SB2.

FIG. 4 is a schematic diagram showing an example of the positional relationship between the projection regions PR1 to PR7, the detection regions SA1 to SA6, SB1 and SB2, and the substrate P. The positional relationship in a plane including the surface of the substrate P is shown. ing. As shown in FIG. 4, in the present embodiment, the surface of the substrate P has a plurality of exposure areas (exposure target areas) PA1 to PA4 onto which an image of the pattern of the mask M is projected. In the present embodiment, the surface of the substrate P has four exposure areas PA1 to PA4. The exposure areas PA1 and PA2 are arranged at substantially equal intervals in the Y axis direction, and the exposure areas PA3 and PA4 are arranged at substantially equal intervals in the Y axis direction. The exposure area PA1 is arranged on the −Y side with respect to the exposure area PA2. The exposure area PA3 is arranged on the + Y side with respect to the exposure area PA4. The exposure areas PA1 and PA2 are arranged on the + X side with respect to the exposure areas PA3 and PA4.

In the present embodiment, each of the projection areas PR1 to PR7 is a trapezoid in the XY plane. In the present embodiment, projection regions PR1, PR3, PR5, PR7 by the projection optical systems PL1, PL3, PL5, PL7 are arranged at substantially equal intervals in the Y-axis direction, and projection regions PR2 by the projection optical systems PL2, PL4, PL6 are arranged. , PR4, PR6 are arranged at substantially equal intervals in the Y-axis direction. The projection areas PR1, PR3, PR5, PR7 are arranged on the −X side with respect to the projection areas PR2, PR4, PR6. Further, the projection areas PR2, PR4, and PR6 are arranged between the projection areas PR1, PR3, PR5, and PR7 with respect to the Y-axis direction.

In the present embodiment, among the plurality of projection areas PR1 to PR7, the distance between the two outer projection areas PR1 and the projection area PR7 with respect to the Y-axis direction is set to be two outside the plurality of exposure areas PA1 to PA4 with respect to the Y-axis direction. It is smaller than the interval between the −Y side edge of the two exposure areas PA1 (PA4) and the + Y side edge of the exposure area PA2 (PA3). Further, the distance between the two outer projection areas PR1 and PR7 in the Y-axis direction is substantially the same as or slightly larger than the distance between the −Y side edge and the + Y side edge of the exposure area PA1. In the present embodiment, the sizes and shapes of the exposure areas PA1 to PA4 are substantially the same.

In the present embodiment, the plurality of detection areas SA1 to SA6 by the detectors 91A to 91F of the first alignment system 91 are arranged at predetermined intervals in the Y-axis direction. The plurality of detection regions SB1 and SB2 by the

detectors

92A and 92B of the second alignment system 92 are arranged at predetermined intervals in the Y-axis direction. In the present embodiment, the first alignment system 91 has six detection areas SA1 to SA6, and the second alignment system 92 has two detection areas SB1 and SB2. In the present embodiment, the number of detection areas SB1 and SB2 of the second alignment system 92 is smaller than the number of detection areas SA1 to SA6 of the first alignment system 91.

In the present embodiment, the detection areas SA1 to SA6 are arranged on the −X side with respect to the X-axis direction (scanning direction) with respect to the projection areas PR1 to PR7. The detection areas SB1 and SB2 are arranged on the + X side with respect to the X-axis direction (scanning direction) with respect to the projection areas PR1 to PR7.

Among the plurality of detection areas SA1 to SA6, the distance between the two outer detection areas SA1 and SA6 in the Y-axis direction is set so that the two outer exposure areas PA1 ( The distance between the −Y side edge of PA4) and the + Y side edge of exposure area PA2 (PA3) is substantially equal. Among the plurality of detection areas SB1 and SB2, the distance between the two outer detection areas SB1 and the detection area SB2 with respect to the Y-axis direction is the two outer exposure areas PA1 ( The distance between the −Y side edge of PA4) and the + Y side edge of exposure area PA2 (PA3) is substantially equal.

That is, in the present embodiment, the distance between the detection area SA1 and the detection area SA6 at both ends of the first alignment system 91 in the Y-axis direction, and the distance between the detection area SB1 and the detection area SB2 at both ends of the second alignment system 92. Is almost the same.

In the present embodiment, the positions of the detection areas SA1 and SA6 at both ends of the first alignment system 91 in the Y-axis direction are substantially the same as the positions of the detection areas SB1 and SB2 at both ends of the second alignment system 92. is there.

The first and

second alignment systems

91 and 92 can detect a plurality of alignment marks m1 to m6 provided on the substrate P. In this embodiment, six alignment marks m1 to m6 are arranged on the substrate P so as to be separated in the Y-axis direction, and groups of these alignment marks m1 to m6 are arranged at four places separated in the X-axis direction. Alignment marks m1, m2, and m3 are provided adjacent to both ends of exposure areas PA1 and PA4, and alignment marks m4, m5, and m6 are provided adjacent to both ends of exposure areas PA2, PA3.

In the following description, among the four groups of alignment marks m1 to m6 arranged at four positions separated in the X-axis direction, the group of alignment marks m1 to m6 that is closest to the −X side edge of the substrate P is appropriately selected. The group of alignment marks m1 to m6 near the −X side edge of the substrate P after the first group G1 is referred to as the first group G1, and is appropriately referred to as the second group G2, and the substrate P is next after the second group G2. A group of alignment marks m1 to m6 close to the −X side edge of the substrate P is appropriately referred to as a third group G3, and a group of alignment marks m1 to m6 closest to the + X side edge of the substrate P is appropriately referred to as a fourth group G4. .

In the present embodiment, the detection areas SA1 to SA6 (detectors 91A to 91F) of the first alignment system 91 correspond to the six alignment marks m1 to m6 that are arranged apart from each other in the Y-axis direction on the substrate P. Has been placed. The detectors 91A to 91F are provided so that the alignment marks m1 to m6 are simultaneously arranged in the detection areas SA1 to SA6. The first alignment system 91 can simultaneously detect the six alignment marks m1 to m6 using the detectors 91A to 91F.

In addition, detection areas SB1 and SB2 (

detectors

92A and 92B) of the second alignment system 92 are arranged corresponding to the two alignment marks m1 and m6 that are arranged apart from each other in the Y-axis direction on the substrate P. .

Detectors

92A and 92B are provided such that alignment marks m1 and m6 are simultaneously arranged in detection areas SB1 and SB2. The second alignment system 92 can simultaneously detect the two outer alignment marks m1 and m6 in the Y-axis direction among the plurality of alignment marks m1 to m6 using the

detectors

92A and 92B.

Next, an example of the operation of the exposure apparatus EX during exposure of the substrate P according to the present embodiment will be described.

In the present embodiment, at least a part of the operation of the exposure apparatus EX is executed based on predetermined control information (exposure control information) related to exposure. The exposure control information includes a control command group that defines the operation of the exposure apparatus EX, and is also called an exposure recipe. In the following description, the control information related to exposure is appropriately referred to as an exposure recipe.

The exposure recipe is stored in the control device 5 in advance. The operating conditions of the exposure apparatus EX at least during exposure of the substrate P (during the irradiation operation of the exposure light EL on the mask M and the substrate P) are determined in advance by the exposure recipe. The control device 5 controls the operation of the exposure apparatus EX based on the exposure recipe.

The exposure recipe includes conditions for moving the mask stage 1 and the substrate stage 2 when the substrate P is exposed. When the substrate P is exposed, the control device 5 moves the mask stage 1 and the substrate stage 2 based on the exposure recipe. The exposure apparatus EX of the present embodiment is a multi-lens scan exposure apparatus, and the mask M and the substrate P are moved in the X-axis direction in the XY plane when the exposure areas PA1 to PA4 of the substrate P are exposed. Based on the exposure recipe, the control device 5 irradiates the mask M with the exposure light EL while moving the mask M and the substrate P synchronously in the X-axis direction, and exposes the exposure area on the surface of the substrate P through the mask M. Exposure light EL is irradiated to each of PA1 to PA4 to expose these exposure areas PA1 to PA4. At the time of exposure of the substrate P, the control device 5 moves the substrate P in the X-axis direction (scanning direction) relative to the projection regions PR1 to PR7 based on the exposure recipe, while the plurality of exposure regions PA1 of the substrate P. ˜PA4 is sequentially exposed.

In the present embodiment, the exposure processing for the plurality of exposure areas PA1 to PA4 provided on the substrate P is performed by changing the exposure areas PA1 to PA4 from the projection areas PR1 to PR7 along the surface (XY plane) of the substrate P. It is executed while moving in the axial direction.

For example, when exposing the exposure area PA1 of the substrate P, the control device 5 moves the exposure area PR1 of the substrate P in the X-axis direction with respect to the projection areas PR1 to PR7, and moves the substrate P in the X-axis direction. In synchronization with the illumination area, the mask M is moved in the X-axis direction while irradiating the illumination area with the exposure light EL, and the exposure light EL from the mask M is projected through the projection system PS to the projection areas PR1˜PR. Irradiate PR7. Thus, the exposure area PA1 of the substrate P is exposed with the exposure light EL irradiated to the projection areas PR1 to PR7, and the pattern image of the mask M is projected onto the exposure area PA1 of the substrate P.

Next, an example of a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration will be described with reference to the flowchart of FIG. 5 and the schematic diagrams of FIGS.

As shown in FIG. 5, in the present embodiment, a plurality of exposure regions PA1 to PA4 on the substrate P are sequentially exposed while irradiating the projection regions PR1 to PR7 with the exposure light EL, and the substrate P is subjected to the first exposure. A step (step SP1) of executing a first exposure process for forming one pattern layer (first layer) and alignment marks m1 to m6 on the substrate P on which the first exposure process has been performed using the alignment system 9 , And performing an alignment process for deriving the positions of the exposure areas PA1 to PA4 each having the first pattern layer formed by the first exposure process (step SP2), and exposing light to the projection areas PR1 to PR7 While irradiating EL, a plurality of exposure regions PA1 to PA4 on the substrate P on which the first exposure process and the alignment process have been performed are sequentially exposed, and the substrate P The second pattern layer performing a second exposure process to form a (second layer) (step SP3) is performed (the first pattern layer).

In the present embodiment, for the sake of simplicity, the case where the first and second pattern layers are formed on the substrate P will be described as an example. However, the third, fourth,... A plurality of arbitrary pattern layers such as the nth pattern layer can be formed. For example, when manufacturing a thin film transistor, about five layers (pattern layers), such as a metal layer and a transparent electrode layer, are formed on the substrate P.

In the following description, the exposure area PA1 is appropriately referred to as a first exposure area PA1, the exposure area PA2 is appropriately referred to as a second exposure area PA2, and the exposure area PA3 is appropriately referred to as a third exposure area PA3. The exposure area PA4 is appropriately referred to as a fourth exposure area PA4.

First, the first exposure process will be described with reference to FIG.

The control device 5 loads (loads) the substrate P onto the substrate stage 2. A photosensitive agent is applied to the substrate P. A mask M having a pattern corresponding to the first pattern layer formed on the substrate P is loaded (loaded) and held on the mask stage 1.

Immediately after being held on the substrate stage 2, as shown in FIG. 6A, the substrate P is disposed at a predetermined position with respect to the projection regions PR1 to PR7 and the detection regions SA1 to SA6, SB1 and SB2. . In the following description, the position of the substrate P shown in FIG. 6A is appropriately referred to as an initial position.

After the mask M is held on the mask stage 1, a baseline measurement process is executed based on the exposure recipe. In the baseline measurement process, the positional relationship (baseline amount) between the position of the pattern image of the mask M by the projection system PS (the positions of the projection areas PR1 to PR7) and the detection areas SA1 to SA6, SB1, and SB2 of the alignment system 9 is calculated. It is a process to measure.

In the baseline measurement process, the position of the substrate stage 2 is measured by the interferometer system 6, and an image of an alignment mark (not shown) arranged on the mask M is received by the light receiving device 46 via the projection system PS and the transmission unit 45. A process of receiving light and a process of detecting the transmitting portion 45 (reference mark) by the alignment system 9 while measuring the position of the substrate stage 2 by the interferometer system 6. As a result, the positions of the projection areas PR1 to PR7 and the positions of the detection areas SA1 to SA6, SB1 and SB2 in the coordinate system defined by the interferometer system 6 (the coordinate system in the XY plane) are detected, and the control device 5 Can derive the baseline amount.

In the present embodiment, in the first exposure process, among the plurality of exposure areas PA1 to PA4, the first exposure area PA1 is first exposed, then the second exposure area PA2 is exposed, and then the third exposure area PA3 is set. Finally, the fourth exposure area PA4 is exposed.

The first exposure process is an exposure process for forming the first pattern layer, and the alignment marks (m1 to m6) are not provided on the substrate P. When executing the first exposure process, the process of detecting the position of the substrate P using the alignment system 9 is not executed.

The control device 5 starts exposure of the plurality of exposure areas PA1 to PA4. First, the control device 5 controls the substrate stage 2 holding the substrate P in order to start the exposure of the first exposure area PA1, and the substrate is arranged so that the first exposure area PA1 is arranged at the exposure start position. P is moved from the initial position to the exposure start position of the first exposure area PA1. Note that the first exposure area PA1 is arranged outside the projection areas PR1 to PR7 at least immediately before the substrate P moves to the exposure start position of the first exposure area PA1.

FIG. 6B shows a state where the first exposure area PA1 is arranged at the exposure start position. The exposure start position of the first exposure area PA1 includes a position where the −X side end of the first exposure area PA1 is disposed at least in a part of the projection areas PR2, PR4, PR6. In the present embodiment, as shown in FIG. 6B, the exposure start position of the first exposure area PA1 is such that the −X side end of the first exposure area PA1 is at the + X side of the projection areas PR2, PR4, PR6. It is a position arrange | positioned at the edge.

The control device 5 controls the substrate stage 2 to move the first exposure area PA1 of the substrate P in the −X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. To do. Thereby, the first exposure area PA1 is exposed.

The control device 5 moves the substrate P in the −X direction until at least the first exposure area PA1 is arranged at the exposure end position. The exposure end position of the first exposure area PA1 includes a position where the + X side end of the first exposure area PA1 is arranged at least in a part of the projection areas PR1, PR3, PR5, PR7. In the present embodiment, the exposure end position of the first exposure area PA1 is a position where the + X side end of the first exposure area PA1 is arranged at the −X side end of the projection areas PR1, PR3, PR5, PR7. is there.

Thus, the exposure of the first exposure area PA1 is completed. During the irradiation of the exposure light EL with respect to the first exposure area PA1, the substrate stage 2 holding the substrate P moves at a substantially constant speed (constant speed) in the −X direction.

Next, in order to start the exposure of the second exposure area PA2, the control device 5 controls the substrate stage 2 holding the substrate P so that the second exposure area PA2 is arranged at the exposure start position. The substrate P is moved from the exposure end position of the first exposure area PA1 to the exposure start position of the second exposure area PA2. Note that the second exposure area PA2 is arranged outside the projection areas PR1 to PR7 at least immediately before the substrate P moves to the exposure start position of the second exposure area PA2.

FIG. 6C shows a state in which the second exposure area PA2 is arranged at the exposure start position. The exposure start position of the second exposure area PA2 includes a position where the + X side end of the second exposure area PA2 is disposed at least in a part of the projection areas PR1, PR3, PR5, PR7. In the present embodiment, as shown in FIG. 6C, the exposure start position of the second exposure area PA2 is such that the + X side end of the second exposure area PA2 is −− of the projection areas PR1, PR3, PR5, PR7. This is the position at the end on the X side.

The control device 5 controls the substrate stage 2 to move the second exposure area PA2 of the substrate P in the + X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. . Thereby, the second exposure area PA2 is exposed.

The control device 5 moves the substrate P in the + X direction until at least the second exposure area PA2 is arranged at the exposure end position. The exposure end position of the second exposure area PA2 includes a position where the −X side end of the second exposure area PA2 is disposed at least in a part of the projection areas PR2, PR4, PR6. In the present embodiment, the exposure end position of the second exposure area PA2 is a position where the −X side end of the second exposure area PA2 is disposed at the + X side end of the projection areas PR2, PR4, and PR6.

Thus, the exposure of the second exposure area PA2 is completed. During the irradiation of the exposure light EL with respect to the second exposure area PA2, the substrate stage 2 holding the substrate P moves at a substantially constant speed (constant speed) in the + X direction.

Next, in order to start the exposure of the third exposure area PA3, the control device 5 controls the substrate stage 2 holding the substrate P so that the third exposure area PA3 is arranged at the exposure start position. The substrate P is moved from the exposure end position of the second exposure area PA2 to the exposure start position of the third exposure area PA3. Note that the third exposure area PA3 is arranged outside the projection areas PR1 to PR7 at least immediately before the substrate P moves to the exposure start position of the third exposure area PA3.

FIG. 6D shows a state in which the third exposure area PA3 is arranged at the exposure start position. The exposure start position of the third exposure area PA3 includes a position at which the −X side end of the third exposure area PA3 is disposed in at least a part of the projection areas PR2, PR4, PR6. In the present embodiment, as shown in FIG. 6D, the exposure start position of the third exposure area PA3 is such that the −X side end of the third exposure area PA3 is at the + X side of the projection areas PR2, PR4, PR6. It is a position arrange | positioned at the edge.

The control device 5 controls the substrate stage 2 to move the third exposure area PA3 of the substrate P in the −X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. To do. Thereby, the third exposure area PA3 is exposed.

The control device 5 moves the substrate P in the −X direction until at least the third exposure area PA3 is arranged at the exposure end position. The exposure end position of the third exposure area PA3 includes a position where the + X side end of the third exposure area PA3 is arranged at least in a part of the projection areas PR1, PR3, PR5, PR7. In the present embodiment, the exposure end position of the third exposure area PA3 is a position where the + X side end of the third exposure area PA3 is arranged at the −X side end of the projection areas PR1, PR3, PR5, PR7. is there.

Thus, the exposure of the third exposure area PA3 is completed. During the irradiation of the exposure light EL with respect to the third exposure area PA3, the substrate stage 2 holding the substrate P moves at a substantially constant speed (constant speed) in the −X direction.

Next, in order to start the exposure of the fourth exposure area PA4, the control device 5 controls the substrate stage 2 holding the substrate P so that the fourth exposure area PA4 is arranged at the exposure start position. The substrate P is moved from the exposure end position of the third exposure area PA3 to the exposure start position of the fourth exposure area PA4. Note that the fourth exposure area PA4 is disposed outside the projection areas PR1 to PR7 at least immediately before the substrate P moves to the exposure start position of the fourth exposure area PA4.

FIG. 6E shows a state where the fourth exposure area PA4 is arranged at the exposure start position. The exposure start position of the fourth exposure area PA4 includes a position where the + X side end of the fourth exposure area PA4 is arranged at least in a part of the projection areas PR1, PR3, PR5, PR7. In the present embodiment, as shown in FIG. 6 (E), the exposure start position of the fourth exposure area PA4 is such that the + X side end of the fourth exposure area PA4 is −− of the projection areas PR1, PR3, PR5, PR7. This is the position at the end on the X side.

The control device 5 controls the substrate stage 2 to move the fourth exposure area PA4 of the substrate P in the + X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. . Thereby, the fourth exposure area PA4 is exposed.

The control device 5 moves the substrate P in the + X direction until at least the fourth exposure area PA4 is arranged at the exposure end position. The exposure end position of the fourth exposure area PA4 includes a position where the −X side end of the fourth exposure area PA4 is disposed in at least a part of the projection areas PR2, PR4, PR6. In the present embodiment, as shown in FIG. 6F, the exposure end position of the fourth exposure area PA4 is such that the −X side end of the fourth exposure area PA4 is at the + X side of the projection areas PR2, PR4, PR6. It is a position arrange | positioned at the edge.

Thus, the exposure of the fourth exposure area PA4 is completed. During the irradiation of the exposure light EL to the fourth exposure area PA4, the substrate stage 2 holding the substrate P moves at a substantially constant speed (constant speed) in the + X direction.

Thus, the first exposure process is completed. After the first exposure process is completed, the substrate P is unloaded from the substrate stage 2. The substrate P unloaded from the substrate stage 2 is subjected to various process processes including a development process and an etching process. Thereby, the first pattern layer is formed on the substrate P. Further, alignment marks m1 to m6 are formed on the substrate P by executing the first exposure process and the subsequent process process.

Thereafter, a photosensitive agent is applied to the substrate P on which the first pattern layer and the alignment marks m1 to m6 are formed in order to perform the second exposure process.

Next, the alignment process will be described with reference to FIG.

In this embodiment, two alignment modes are prepared. The exposure recipe has a first alignment mode and a second alignment mode. When exposing the exposure areas PA1 to PA4 of the substrate P, the control device 5 selects at least one of the first alignment mode and the second alignment mode and executes an alignment process for deriving the positions of the exposure areas PA1 to PA4. .

In the first alignment mode, all of the plurality of alignment marks m1 to m6 adjacent to the exposure areas PA1 to PA4 on the substrate P are detected, and the position of the substrate P and the positions of the exposure areas PA1 to PA4 on the substrate P are determined. This is the mode to derive. That is, in the first alignment mode, the control device 5 detects all the alignment marks m1 to m4 of the first to fourth groups G1 to G4 using the alignment system 9.

The second alignment mode is a mode that uses the result of the alignment process based on the first alignment mode. In the second alignment mode, a predetermined alignment mark is detected from the plurality of alignment marks m1 to m6 on the substrate P, and the detection result of the predetermined alignment mark and the derived result of the first alignment mode are used. In this mode, the position of the substrate P and the positions of the exposure areas PA1 to PA4 on the substrate P are derived. In the second alignment mode, the control device 5 uses the alignment system 9 to detect some of the alignment marks m1 to m6 on the substrate P.

Hereinafter, an alignment process based on the first alignment mode will be described. The second alignment mode will be described later.

The control device 5 loads (loads) the substrate P having the first pattern layer and the alignment marks m1 to m6 onto the substrate stage 2. A photosensitive agent is applied to the substrate P. Immediately after being held on the substrate stage 2, the substrate P is placed at the initial position. A mask M having a pattern corresponding to the second pattern layer formed on the substrate P is loaded (loaded) and held on the mask stage 1.

The controller 5 uses the alignment system 9 to detect the alignment marks m1 to m6 corresponding to the exposure areas PA1 to PA4, and derives the positions of the exposure areas PA1 to PA4.

First, as shown in FIG. 7A, the control device 5 uses the interferometer system 6 to measure the position of the substrate stage 2 and control the substrate stage 2 to detect the first alignment system 91. The substrate P is moved so that the alignment marks m1 to m6 of the first group G1 are arranged in the areas SA1 to SA6. The first alignment system 91 detects the alignment marks m1 to m6 of the first group G1. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the first group G1 in the coordinate system defined by the interferometer system 6.

Next, as illustrated in FIG. 7B, the control device 5 controls the substrate stage 2 while measuring the position of the substrate stage 2 using the interferometer system 6, and controls the second alignment system 92. The substrate P is moved so that the alignment marks m1 and m6 of the third group G3 are arranged in the detection areas SB1 and SB2. The second alignment system 92 detects the alignment marks m1 and m6 of the third group G3. Thereby, the control apparatus 5 can derive | lead-out the position of alignment mark m1, m6 of the 3rd group G3 in the coordinate system prescribed | regulated by the interferometer system 6. FIG.

Next, as shown in FIG. 7C, the control device 5 controls the substrate stage 2 while measuring the position of the substrate stage 2 using the interferometer system 6, and controls the first alignment system 91. The substrate P is moved so that the alignment marks m1 to m6 of the second group G2 are arranged in the detection areas SA1 to SA6. The first alignment system 91 detects the alignment marks m1 to m6 of the second group G2. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the second group G2 in the coordinate system defined by the interferometer system 6.

Next, as shown in FIG. 7D, the control device 5 controls the substrate stage 2 while measuring the position of the substrate stage 2 using the interferometer system 6, and controls the first alignment system 91. The substrate P is moved so that the alignment marks m1 to m6 of the third group G3 are arranged in the detection areas SA1 to SA6. The first alignment system 91 detects the alignment marks m1 to m6 of the third group G3. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the third group G3 in the coordinate system defined by the interferometer system 6.

Next, as illustrated in FIG. 7E, the control device 5 controls the substrate stage 2 while measuring the position of the substrate stage 2 using the interferometer system 6, and controls the first alignment system 91. The substrate P is moved so that the alignment marks m1 to m6 of the fourth group G4 are arranged in the detection areas SA1 to SA6. The first alignment system 91 detects the alignment marks m1 to m6 of the fourth group G4. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the fourth group G4 in the coordinate system defined by the interferometer system 6.

In the present embodiment, as described with reference to FIGS. 7B and 7D, the first alignment system 91 and the second alignment system 92 have detection regions (SA1, SA6) at both ends. ), (SB1, SB2) are used to detect the same alignment marks m1, m6 on the substrate P.

The position of the detection areas SA1 to SA6 of the first alignment system 91 in the coordinate system defined by the interferometer system 6 is known by the above-described baseline measurement process. Therefore, the control device 5 arranges the alignment marks m1 and m6 in the detection areas SA1 and SA6 of the first alignment system 91 while measuring the position of the substrate stage 2 by the interferometer system 6, and the second alignment system 92. The second alignment system in the coordinate system defined by the interferometer system 6 by arranging the alignment marks m1, m6 identical to the alignment marks m1, m6 arranged in the detection areas SA1, SA6 in the detection areas SB1, SB2. The positions of the 92 detection areas SB1 and SB2 can be obtained. Further, the control device 5 is based on the result of detection of the alignment marks m1 and m6 on the substrate P by the first alignment system 91 and the result of detection of the alignment marks m1 and m6 on the substrate P by the second alignment system 92. Thus, the positional relationship between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92 can be derived.

When deriving the positional relationship between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92, the substrate stage 2 is used without using the alignment marks on the substrate P. The upper reference mark (transmission portion 45) may be used. The controller 5 measures the position of the substrate stage 2 with the interferometer system 6 and arranges reference marks (transmission portions 45) in the detection areas SA1 and SA6 of the first alignment system 91, and By arranging the same reference marks as the reference marks arranged in the detection areas SA1 and SA6 in the detection areas SB1 and SB2, the detection areas SB1 and SB1 of the second alignment system 92 in the coordinate system defined by the interferometer system 6 are arranged. The position of SB2 can be obtained. The control device 5 performs the first alignment based on the result of detecting the reference mark on the substrate stage 2 by the first alignment system 91 and the result of detecting the reference mark on the substrate stage 2 by the second alignment system 92. The positional relationship between the detection areas SA1 to SA6 of the system 91 and the detection areas SB1 and SB2 of the second alignment system 92 can be derived.

When deriving the positional relationship between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92, marks (alignment marks, reference marks) detected by the first alignment system 91 are derived. ) And a mark (alignment mark, reference mark) detected by the second alignment system 92 may be different.

As described above, the control device 5 uses the alignment system 9 to detect all of the alignment marks m1 to m6 provided corresponding to each of the plurality of exposure areas PA1 to PA4.

In the present embodiment, the alignment marks corresponding to the first exposure area PA1 are the alignment marks m1 to m3 of the third group G3 and the alignment marks m1 to m3 of the fourth group G4. The alignment marks corresponding to the second exposure area PA2 are the alignment marks m4 to m6 of the third group G3 and the alignment marks m4 to m6 of the fourth group G4. The alignment marks corresponding to the third exposure area PA3 are the alignment marks m4 to m6 of the first group G1 and the alignment marks m4 to m6 of the second group G2. The alignment marks corresponding to the fourth exposure area PA4 are the alignment marks m1 to m3 of the first group G1 and the alignment marks m1 to m3 of the second group G2.

The control device 5 detects the positions of the alignment marks m1 to m6 of the first to fourth groups G1 to G4 detected using the first alignment system 91 and the third group G3 detected using the second alignment system 92. Based on the positions of the alignment marks m1 and m6, the position of the substrate P in the coordinate system defined by the interferometer system 6 and the positions of the plurality of exposure areas PA1 to PA4 can be derived.

Next, the second exposure process will be described with reference to FIG.

After the positions of the exposure areas PA1 to PA4 are derived by executing the alignment process, the control device 5 starts the second exposure process for forming the second pattern layer on the substrate P.

In the present embodiment, in the second exposure process, among the plurality of exposure areas PA1 to PA4, the first exposure area PA1 is first exposed, then the second exposure area PA2 is exposed, and then the third exposure area PA3 is set. Finally, the fourth exposure area PA4 is exposed.

The control device 5 controls the substrate stage 2 holding the substrate P in order to start the exposure of the first exposure area PA1, so that the first exposure area PA1 is arranged at the exposure start position. It moves to the exposure start position in the area PA1. Note that the first exposure area PA1 is arranged outside the projection areas PR1 to PR7 at least immediately before the substrate P moves to the exposure start position of the first exposure area PA1.

FIG. 7F shows a state where the first exposure area PA1 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the first exposure area PA1 of the substrate P in the −X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. To do. Thereby, the first exposure area PA1 is exposed. The control device 5 moves the substrate P in the −X direction until at least the first exposure area PA1 is arranged at the exposure end position. Thus, the exposure of the first exposure area PA1 is completed.

Thus, in the present embodiment, among the plurality of exposure areas PA1 to PA4, the movement direction of the substrate P with respect to the X-axis direction when the first exposure area PA1 that is first exposed in the first exposure process is exposed. The moving direction of the substrate P with respect to the X-axis direction when exposing the first exposure area PA1 exposed first in the second exposure process is the same direction (−X direction).

In the present embodiment, in the second exposure process, the order of exposing the plurality of exposure areas PA1 to PA4, the moving direction of the substrate P when exposing each of the exposure areas PA1 to PA4, the exposure start position, and the exposure end position Is substantially the same as the first exposure process. That is, in the second exposure process, the control device 5 moves the substrate P along the same movement trajectory (movement path) as the trajectory (movement path) of the substrate P described with reference to FIG. PA1 to PA4 are sequentially exposed.

As described above, in the present embodiment, the movement trajectory (movement path) of the substrate P with respect to the projection areas PR1 to PR7 when the plurality of exposure areas PA1 to PA4 are sequentially exposed in the first exposure process, and the second exposure process The movement trajectory (movement path) of the substrate P with respect to the projection areas PR1 to PR7 when the plurality of exposure areas PA1 to PA4 are sequentially exposed is substantially the same. The description of the procedure for exposing the exposure areas PA2 to PA4 in the second exposure process is omitted.

As described above, the first exposure process for forming the first pattern layer on the substrate P, the alignment process performed when forming the second pattern layer on the first pattern layer, and the second pattern layer on the substrate P are performed. The second exposure process to be formed has been described.

Next, an example of the second exposure process will be described. In the second exposure process, the plurality of substrates P on which the first pattern layer is formed are sequentially exposed. For example, a plurality of substrates P having a predetermined number of groups as one group (lot) are sequentially exposed using exposure light EL from a pattern of a predetermined mask M. The plurality of substrates P in the one lot are substrates P that are sequentially exposed to form the first pattern layer in the first exposure process and have undergone various process processes such as a development process.

As described above, in the present embodiment, the first alignment mode and the second alignment mode are prepared, and at least one of the first alignment mode and the second alignment mode is performed before the second exposure process is executed. Is selected, and the alignment process is executed based on the selected alignment mode.

In the present embodiment, among a plurality of substrates P in one lot composed of a predetermined number (for example, 50) of substrates P, a predetermined number (for example, 5) from the first substrate P (the first substrate P of the lot). The first alignment mode is selected as the alignment process when the substrate P is exposed. As described with reference to FIG. 7 and the like, the first alignment mode detects all of the plurality of alignment marks m1 to m6 adjacent to the exposure areas PA1 to PA4 of the substrate P, and determines the position of the substrate P and the substrate. In this mode, the positions of the exposure areas PA1 to PA4 on P are derived.

In the present embodiment, among a lot, a predetermined number of substrates P from the top of the lot are aligned based on the first alignment mode. After the plurality of substrates P are exposed, the control device 5 performs alignment processing on the remaining substrates P in the lot based on the second alignment mode, and exposes the substrates P based on the result of the alignment processing. .

The second alignment mode is a mode that uses the result of the alignment process based on the first alignment mode. In the present embodiment, in the second alignment mode, a predetermined alignment mark is detected from the plurality of alignment marks m1 to m6 on the substrate P, and the detection result of the predetermined alignment mark and the derivation of the first alignment mode are performed. In this mode, the position of the substrate P and the positions of the exposure areas PA1 to PA4 on the substrate P are derived based on the result.

Hereinafter, an example of the alignment process based on the second alignment mode and the exposure process (second exposure process) of the substrate P executed based on the result of the alignment process will be described with reference to FIG.

The controller 5 uses the alignment system 9 to detect predetermined alignment marks m1 to m6 on the substrate P, and derives the positions of the exposure areas PA1 to PA4.

First, as shown in FIG. 8A, the control device 5 uses the interferometer system 6 to measure the position of the substrate stage 2 and control the substrate stage 2 to detect the first alignment system 91. The substrate P is moved so that the alignment marks m1 to m6 of the first group G1 are arranged in the areas SA1 to SA6. The first alignment system 91 detects the alignment marks m1 to m6 of the first group G1. Thereby, the control device 5 can derive the positions of the alignment marks m1 to m6 of the first group G1 in the coordinate system defined by the interferometer system 6.

Next, as shown in FIG. 8B, the control device 5 controls the substrate stage 2 while measuring the position of the substrate stage 2 using the interferometer system 6, and controls the second alignment system 92. The substrate P is moved so that the alignment marks m1 and m6 of the third group G3 are arranged in the detection areas SB1 and SB2. The second alignment system 92 detects the alignment marks m1 and m6 of the third group G3. Thereby, the control apparatus 5 can derive | lead-out the position of alignment mark m1, m6 of the 3rd group G3 in the coordinate system prescribed | regulated by the interferometer system 6. FIG.

The control device 5 detects the alignment marks m1 to m6 of the first group G1 using the first alignment system 91 and the alignment marks m1 and m6 of the third group G3 using the second alignment system 92. Based on the result, the position of the substrate P in the coordinate system defined by the interferometer system 6 is derived.

As described above, by the alignment process based on the first alignment mode, the position of the substrate P in the coordinate system defined by the interferometer system 6 (hereinafter referred to as position data 1 as appropriate) and the exposure area on the substrate P. The positions of PA1 to PA4 (hereinafter referred to as position data 2 as appropriate) have already been obtained. The position data 1 is data relating to the position of the entire substrate P, and includes a predetermined reference position on the substrate P such as the position of the outer shape (edge) of the substrate P, for example. The position data 2 is the position of each of the exposure areas PA1 to PA4 with respect to a predetermined reference position on the substrate P.

Note that the position data 1 may be data obtained from any one substrate P among the predetermined number of substrates P from the lot head aligned in the first alignment mode, or each of the predetermined number of substrates P. The average value of the data obtained from Similarly, the position data 2 may be data obtained from any one substrate P among the predetermined number of substrates P from the lot head aligned in the first alignment mode, or the predetermined number of substrates P The average value of the data obtained from each may be used.

Also, the position of the substrate P in the coordinate system defined by the interferometer system 6 (hereinafter referred to as position data 3 as appropriate) is obtained by the alignment process based on the second alignment mode. Therefore, the control device 5 is based on the position data 1 and the position data 2 that are the derivation results of the alignment process based on the first alignment mode, and the position data 3 that is the derivation result of the alignment process based on the second alignment mode. The positions of the exposure areas PA1 to PA4 on the substrate P in the coordinate system defined by the interferometer system 6 (hereinafter referred to as position data 4 as appropriate) can be obtained. In the present embodiment, the positions of the exposure areas PA1 to PA4 (the positional relationship between the predetermined reference position on the substrate P and the exposure areas PA1 to PA4) with respect to the predetermined reference position on the substrate P are aligned based on the first alignment mode. It is considered that there is almost no variation between the time of executing and the time of executing the alignment process based on the second alignment mode. Therefore, the control device 5 detects the alignment marks m1 to m6 using the first and

second alignment systems

91 and 92 based on the second alignment mode, and the derivation result (position data 1, 1) of the first alignment mode. 2), the position of the substrate P (position data 3) and the positions of the exposure areas PA1 to PA4 on the substrate P (position data 4) can be derived.

Further, as described above, the control device 5 detects the detection areas SA1 and SA6 at both ends of the first alignment system 91 and the detection areas SB1 and SB1 at both ends of the second alignment system 92 in the alignment process based on the first alignment mode. The same alignment marks m1 and m6 on the substrate P are arranged on each of the SB2, and the same alignment marks m1 and m6 are detected to detect the detection areas SA1 to SA6 of the first alignment system 91 and the second The positional relationship with the detection areas SB1 and SB2 of the alignment system 92 is obtained. Therefore, in the alignment process based on the second alignment mode, the control device 5 uses the first alignment system 91 to detect the alignment marks m1 to m6 of the first group G1, and the second alignment system 92 Based on the detection result of the alignment marks m1 and m6 of the three groups G3, the position data 3 and the position data 4 can be obtained with high accuracy.

After obtaining the positions (position data 4) of the exposure areas PA1 to PA4, the control device 5 starts exposure of the exposure areas PA1 to PA4.

In the present embodiment, after executing the alignment process based on the second alignment mode, the control device 5 first exposes the first exposure area PA1 among the plurality of exposure areas PA1 to PA4, and then the second exposure area. PA2 is exposed, then the third exposure area PA3 is exposed, and finally the fourth exposure area PA4 is exposed.

FIG. 8C shows a state in which the first exposure area PA1 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the first exposure area PA1 of the substrate P in the −X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. To do. Thereby, the first exposure area PA1 is exposed. The control device 5 moves the substrate P in the −X direction until at least the first exposure area PA1 is arranged at the exposure end position. Thus, the exposure of the first exposure area PA1 is completed.

As described above, in the present embodiment, among the plurality of exposure areas PA1 to PA4, the first exposure area PA1 that is first exposed in the exposure process executed after the alignment process based on the first alignment mode is exposed. The movement direction of the substrate P with respect to the X-axis direction and the movement direction of the substrate P with respect to the X-axis direction when exposing the first exposure area PA1 that is first exposed in the exposure process performed after the alignment process based on the second alignment mode. Is the same direction (−X direction).

In the present embodiment, in the exposure process executed after the alignment process based on the second alignment mode, the order of exposing the plurality of exposure areas PA1 to PA4 and the movement of the substrate P when exposing each of the exposure areas PA1 to PA4 The direction, the exposure start position, and the exposure end position are substantially the same as the exposure process executed after the alignment process based on the first alignment mode. That is, in the exposure process executed after the alignment process based on the second alignment mode, the substrate P is moved along the same movement locus (movement path) as that of the substrate P described with reference to FIG. However, the plurality of exposure areas PA1 to PA4 are sequentially exposed.

That is, in the present embodiment, the movement trajectory (movement path) of the substrate P with respect to the projection areas PR1 to PR7 when the plurality of exposure areas PA1 to PA4 are sequentially exposed in the exposure process performed after the alignment process based on the first alignment mode. ) And the movement trajectory (movement path) of the substrate P with respect to the projection areas PR1 to PR7 when the plurality of exposure areas PA1 to PA4 are sequentially exposed in the exposure process performed after the alignment process based on the second alignment mode is approximately The same.

In the present embodiment, the second alignment system 92 is arranged on the + X side with respect to the projection regions PR1 to PR7, and the control device 5 performs alignment with the second alignment system 92 in the alignment process based on the second alignment mode. After detecting the marks m1 and m6, the first exposure area PA1 can be immediately moved to the exposure start position.

From the position of the substrate stage 2 where the alignment marks m1 and m6 on the substrate P held by the substrate stage 2 are arranged in the detection regions SB1 and SB2 of the second alignment system 92 (hereinafter referred to as alignment positions as appropriate) When the −X side end of the first exposure area PA1 moves to the exposure start position of the substrate stage 2 disposed at the + X side end of the projection areas PR2, PR4, PR6, the substrate stage 2 is aligned with respect to the X-axis direction. It moves in the −X direction in an accelerated state between the position and the exposure start position. In the vicinity of the exposure start position, the movement state of the substrate stage 2 is at least one of a settling state and a constant speed state. Further, the −X side end of the first exposure area PA1 extends from the exposure start position of the substrate stage 2 arranged at the + X side end of the projection areas PR2, PR4, PR6, and the + X side end of the first exposure area PA1 When moving to the exposure end position of the substrate stage 2 arranged at the −X side end of the projection areas PR1, PR3, PR5, PR7, the substrate stage 2 moves in the −X direction at a constant speed.

In the present embodiment, a third position adjacent to the first exposure area PA1 is located on the + X side in the X-axis direction with respect to the projection areas PR1 to PR7 and at least at a position away from the minimum necessary running distance of the substrate stage 2. Detection areas SB1 and SB2 of the second alignment system 92 capable of detecting the alignment marks m1 and m2 of the group G3 are arranged. Thereby, the control apparatus 5 can transfer to the exposure process of 1st exposure area | region PA1 immediately after detecting the alignment marks m1 and m6 of the 3rd group G3 using the 2nd alignment system 92. FIG.

The minimum required running distance of the substrate stage 2 is that the substrate stage 2 in a stationary state at the first position starts moving from the first position to one side in a predetermined direction (for example, −X side), and a predetermined target speed Is the distance to the second position that can be reached. The approaching distance includes an acceleration distance at which the substrate stage 2 accelerates and a settling distance at which the substrate stage 2 settles. Between the first position and the second position, the substrate stage 2 moves in an accelerated state, and moves in a settling state in the vicinity of the second position.

The minimum required traveling distance of the substrate stage 2 is a distance according to the movement performance of the substrate stage 2, for example, and is based on the performance of the drive system 4, the weight of the substrate stage 2, and the like. The substrate stage 2 that has reached the target speed before reaching the second position has a target speed between the second position and the third position on one side of the predetermined direction (−X direction) with respect to the second position. Can move at a constant speed.

The distance between the alignment position and the exposure start position in order to reach the target scan speed from the time when the substrate stage 2 in a substantially stationary state at the alignment position starts moving from the alignment position to the exposure start position. Needs to be longer than the minimum required run-up distance of the substrate stage 2.

FIG. 9 is a schematic diagram showing the relationship among the projection optical system PL2, the second alignment system 92, and the substrate P (substrate stage 2). The first exposure of the plurality of exposure areas PA1 to PA4 is first performed at a position on the + X side with respect to the projection area PR2 in the X-axis direction (scanning direction) and at least a minimum required run-up distance LJ. Detection areas SB1 and SB2 of the second alignment system 92 capable of detecting the alignment marks m1 and m6 of the third group G3 on the substrate P adjacent to the one exposure area PA1 are arranged. Thereby, the distance LA between the alignment position and the exposure start position can be made longer than the minimum necessary run-up distance LJ of the substrate stage 2.

Therefore, the alignment marks m1 and m6 of the third group G3 on the substrate P held by the substrate stage 2 that is arranged in a substantially stationary state at the alignment position are arranged in the detection regions SB1 and SB2 of the second alignment system 92. After the detection by the second alignment system 92, the substrate stage 2 starts moving in the −X direction, so that the target scanning speed can be reached before reaching the exposure start position. The substrate stage 2 that has reached the exposure start position moves to the exposure end position at a constant scanning speed in the −X direction at the target scan speed, so that the first exposure area PA1 is −X relative to the projection areas PR1 to PR7. Exposure while moving in the direction.

Note that the alignment position is a position where the first exposure area PA1 is disposed outside the projection areas PR1 to PR7. In the present embodiment, the distance LA between the alignment position and the exposure start position is substantially the same as the minimum required approach distance LJ. That is, in the present embodiment, the first position at one end of the minimum required approach distance LJ matches the alignment position, and the second position at the other end of the minimum required approach distance LJ matches the exposure start position. To do.

It should be noted that the distance LA between the alignment position and the exposure start position may be longer than the minimum required approach distance LJ. In this case, the substrate stage 2 can reach the target scan speed before reaching the exposure start position.

As described above, according to the present embodiment, among the plurality of exposure areas PA1 to PA4, on the + X side with respect to the projection areas PR1 to PR7 and at a position separated by a minimum running distance or more, The detection marks SB1 and SB6 in which the alignment marks m1 and m6 of the third group G3 on the substrate P adjacent to the first exposure area PA1 to be exposed first can be arranged, and the position of the first exposure area PA1 is derived. Since the second alignment system 92 is provided, the control device 5 places the substrate stage 2 in the alignment position, detects the alignment marks m1 and m6 using the second alignment system 92, and then moves the substrate stage 2 to − By moving in the X direction, exposure of the first exposure area PA1 can be started immediately. Therefore, the time required for the alignment process can be shortened. Therefore, a decrease in throughput can be suppressed, and a decrease in device productivity can be suppressed.

Further, in the present embodiment, the detection areas SA1 to SA6 of the first alignment system 91 are arranged at positions on the −X side with respect to the projection areas PR1 to PR7 and at least a minimum running distance. You can also. Thus, after the alignment marks m1 to m6 are detected by the first alignment system 91, the substrate stage 2 is moved in the + X direction, and the exposure area PA1 adjacent to the −X side with respect to the alignment marks m1 to m6. The exposure process for at least one of PA4 can be started immediately.

Further, according to the present embodiment, of the plurality of exposure areas PA1 to PA4, the movement direction with respect to the scanning direction (X-axis direction) when the first exposure area PA1 that is first exposed in the first exposure process is exposed. Since the moving direction with respect to the scanning direction (X-axis direction) when exposing the first exposure region exposed first in the second exposure process is the same direction (−X direction), the substrate P is carried into the substrate stage 2. It is possible to prevent the movement distance of the substrate stage 2 from being extended until the substrate P is unloaded from the substrate stage 2. Therefore, a decrease in throughput can be suppressed.

Further, according to the present embodiment, the movement locus of the substrate stage 2 with respect to the projection areas PR1 to PR7 when the plurality of exposure areas PA1 to PA4 are sequentially exposed in the first exposure process, and the plurality of exposure areas in the second exposure process. Since the movement trajectory of the substrate stage 2 with respect to the projection regions PR1 to PR7 when sequentially exposing PA1 to PA4 is substantially the same, the substrate P is exposed under substantially the same apparatus conditions in the first exposure process and the second exposure process. be able to. For example, even when the body 13 or the like is deformed according to the movement (position) of the substrate stage 2, the first exposure process is performed by making the movement locus of the substrate stage 2 the same in the first exposure process and the second exposure process. In the second exposure process, the exposure areas PA1 to PA4 can be exposed under substantially the same apparatus conditions (deformation conditions of the body 13, etc.).

In the present embodiment, the second alignment system 92 detects the alignment marks m1 and m6 at both ends among the plurality of alignment marks m1 to m6 arranged in the Y-axis direction. Based on the detection result of the second alignment system 92, the position of the substrate P and the positions of the exposure areas PA1 to PA4 can be accurately derived.

Further, in the present embodiment, the first alignment system 91 and the second alignment system 92 detect the alignment marks m1 and m6 on the substrate P using the detection areas at both ends, so the control device 5 Based on the detection result, the position of the substrate P and the positions of the exposure areas PA1 to PA4 can be derived with high accuracy.

In the present embodiment, the number of detection areas (detectors) of the second alignment system 92 is smaller than the number of detection areas (detectors) of the first alignment system 91. Thereby, a space between the second alignment system 92 and the substrate stage 2 (above the substrate stage 2) can be secured. In the present embodiment, the operation of loading the substrate P into the substrate stage 2 and the operation of unloading the substrate P from the substrate stage 2 can be smoothly executed from the + X side with respect to the projection system PS.

In the present embodiment, when a plurality of substrates P in one lot are sequentially exposed, the first alignment mode is set when exposing a predetermined number (for example, about 5) of substrates P from the lot head. The case where the second alignment mode is selected when exposing the remaining substrate P in the lot has been described. For example, a plurality of pattern layers (for example, five pattern layers) are stacked on the substrate P. In the above, at least one of the first alignment mode and the second alignment mode may be selected according to the required overlay accuracy of the pattern layer. For example, the first alignment mode may be selected when high overlay accuracy is required, and the second alignment mode may be selected when relatively rough overlay accuracy is allowed. By executing the alignment process in the second alignment mode, the time required for the alignment process can be shortened, and a decrease in throughput can be suppressed.

Second Embodiment
Next, a second embodiment will be described. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

FIG. 10 is a schematic diagram showing an example of the positional relationship between the projection areas PR1 to PR7, the detection areas SA1 to SA6, SB1 and SB2, and the substrate P according to the second embodiment. As shown in FIG. 10, in the present embodiment, the surface of the substrate P has six exposure areas PA1 to PA6 onto which an image of the pattern of the mask M is projected.

Next, the first exposure process according to the present embodiment will be described with reference to FIG.

In the present embodiment, in the first exposure process, among the plurality of exposure areas PA1 to PA6, exposure is first performed from the second exposure area PA2, then the first exposure area PA1 is exposed, and then the third exposure area PA3 is determined. Then, the fourth exposure area PA4 is exposed, then the fifth exposure area PA5 is exposed, and finally the sixth exposure area PA6 is exposed.

FIG. 11A shows a state in which the second exposure area PA2 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the second exposure area PA2 of the substrate P in the −X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. To do. Thereby, the second exposure area PA2 is exposed.

Next, the control device 5 starts exposure of the first exposure area PA1. FIG. 11B shows a state in which the first exposure area PA1 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the first exposure area PA1 of the substrate P in the + X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. . Thereby, the second exposure area PA2 is exposed.

Next, the control device 5 starts exposure of the third exposure area PA3. FIG. 11C shows a state in which the third exposure area PA3 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the third exposure area PA3 of the substrate P in the −X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. To do. Thereby, the third exposure area PA3 is exposed.

Next, the control device 5 starts exposure of the fourth exposure area PA4. FIG. 11D shows a state where the fourth exposure area PA4 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the fourth exposure area PA4 of the substrate P in the + X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. . Thereby, the fourth exposure area PA4 is exposed.

Next, the control device 5 starts exposure of the fifth exposure area PA5. FIG. 11E shows a state where the fifth exposure area PA5 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the fifth exposure area PA5 of the substrate P in the −X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. To do. Thereby, the fifth exposure area PA5 is exposed.

Next, the control device 5 starts exposure of the sixth exposure area PA6. FIG. 11F shows a state where the sixth exposure area PA6 is arranged at the exposure start position. The control device 5 controls the substrate stage 2 to move the sixth exposure area PA6 of the substrate P in the + X direction with respect to the projection areas PR1 to PR7 while irradiating the projection areas PR1 to PR7 with the exposure light EL. . Thereby, the sixth exposure area PA6 is exposed.

Thus, the first exposure process is completed.

Next, an alignment process based on the first alignment mode will be described with reference to FIG.

On the substrate P, alignment marks m1 to m6 of the first group G1, alignment marks m1 to m6 of the second group G2, alignment marks m1 to m6 of the third group G3, and alignment marks m1 of the fourth group G4 are arranged. To m6.

As shown in FIG. 12A, the control device 5 detects the alignment marks m1 to m6 of the first group G1 with the first alignment system 91.

Next, as shown in FIG. 12B, the control device 5 detects the alignment marks m1 and m6 of the third group G3 with the second alignment system 92.

Next, as shown in FIG. 12C, the control device 5 uses the first alignment system 91 to detect the alignment marks m1 to m6 of the second group G2.

Next, as shown in FIG. 12D, the control device 5 uses the first alignment system 91 to detect the alignment marks m1 to m6 of the third group G3.

Next, as shown in FIG. 12E, the control device 5 detects the alignment marks m1 to m6 of the fourth group G4 by the first alignment system 91.

Also in the present embodiment, as described with reference to FIGS. 12B and 12D, the first alignment system 91 and the second alignment system 92 have the detection regions (SA1, SA6) at both ends. ), (SB1, SB2) are used to detect the same alignment marks m1, m6 on the substrate P.

In the present embodiment, the alignment marks corresponding to the first exposure area PA1 are the alignment marks m1 and m2 of the third group G3 and the alignment marks m1 and m2 of the fourth group G4. The alignment marks corresponding to the second exposure area PA2 are the alignment marks m3 and m4 of the third group G3 and the alignment marks m3 and m4 of the fourth group G4. The alignment marks corresponding to the third exposure area PA3 are the alignment marks m5 and m6 of the third group G3 and the alignment marks m5 and m6 of the fourth group G4. The alignment marks corresponding to the fourth exposure area PA4 are the alignment marks m5 and m6 of the first group G1 and the alignment marks m5 and m6 of the second group G2. The alignment marks corresponding to the fifth exposure area PA5 are the alignment marks m3 and m4 of the first group G1 and the alignment marks m3 and m4 of the second group G2. The alignment marks corresponding to the sixth exposure area PA6 are the alignment marks m1 and m2 of the first group G1 and the alignment marks m1 and m2 of the second group G2.

The control device 5 detects the positions of the alignment marks m1 to m6 of the first to fourth groups G1 to G4 detected using the first alignment system 91 and the third group G3 detected using the second alignment system 92. Based on the positions of the alignment marks m1 and m6, the position of the substrate P in the coordinate system defined by the interferometer system 6 and the positions of the plurality of exposure areas PA1 to PA6 can be derived.

Next, the second exposure process is executed. In the second exposure process, the order in which the plurality of exposure areas PA1 to PA6 are exposed, the moving direction of the substrate P when exposing each of the exposure areas PA1 to PA6, the exposure start position, and the exposure end position are the first exposure process. Is almost the same. That is, in the second exposure process, a plurality of exposure areas PA1 to PA6 are moved while moving the substrate P along the same movement trajectory (movement path) as that of the substrate P described with reference to FIG. Sequential exposure.

As described above, according to the present embodiment, the first exposure process for forming the first pattern layer on the substrate P, the alignment process performed when the second pattern layer is formed on the first pattern layer, and the substrate P The second exposure process for forming the second pattern layer has been described.

Next, an alignment process based on the second alignment mode according to the present embodiment will be described with reference to FIG.

As shown in FIG. 13A, the substrate P is placed at the initial position. Next, as shown in FIG. 13B, the control device 5 detects the alignment marks m1 to m6 of the first group G1 with the first alignment system 91.

Next, as shown in FIG. 13C, the control device 5 detects the alignment marks m1 and m6 of the third group G3 by the second alignment system 92.

The control device 5 detects the alignment marks m1 to m6 of the first group G1 using the first alignment system 91 and the alignment marks m1 and m6 of the third group G3 using the second alignment system 92. Based on the result and the derived result of the first alignment mode, the position of the substrate P and the positions of the exposure areas PA1 to PA6 are detected.

After obtaining the positions (position data 4) of the exposure areas PA1 to PA6, the control device 5 starts exposure of the exposure areas PA1 to PA6. As shown in FIG. 13D, the second exposure area PA2 is arranged at the exposure start position.

Also in this embodiment, in the exposure process executed after the alignment process based on the second alignment mode, the order of exposing the plurality of exposure areas PA1 to PA6 and the movement of the substrate P when exposing each of the exposure areas PA1 to PA6 The direction, the exposure start position, and the exposure end position are substantially the same as the exposure process executed after the alignment process based on the first alignment mode.

As described above, also in this embodiment, the substrate P can be satisfactorily exposed while suppressing a decrease in throughput.

Note that even when the substrate P having the exposure areas PA1 to PA6 and the alignment marks m1 to m6 as shown in FIG. 14 is exposed, the first exposure process and the first and second alignment modes described above are included. By executing the alignment process and the second exposure process, the substrate P can be satisfactorily exposed while suppressing a decrease in throughput.

In FIG. 14, the surface of the substrate P has six exposure areas PA1 to PA6. The exposure areas PA1 and PA2 are arranged at substantially equal intervals in the Y axis direction, the exposure areas PA3 and PA4 are arranged at substantially equal intervals in the Y axis direction, and the exposure areas PA5 and PA6 are arranged in the Y axis direction. Are spaced apart at approximately equal intervals. The exposure area PA1 is arranged on the −Y side with respect to the exposure area PA2. The exposure area PA3 is arranged on the + Y side with respect to the exposure area PA4. The exposure area PA5 is arranged on the −Y side with respect to the exposure area PA5. The exposure areas PA1 and PA2 are arranged on the + X side with respect to the exposure areas PA3 and PA4. The exposure areas PA5 and PA6 are arranged on the −X side with respect to the exposure areas PA3 and PA4. The surface of the substrate P has alignment marks m1 to m6 for the first to sixth groups G1 to G6, respectively.

<Third Embodiment>
Next, a third embodiment will be described. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

FIG. 15 is a diagram illustrating an example of the alignment system 9 according to the third embodiment. In the present embodiment, the positions of the detection areas (SA1, SA6) at both ends of the first alignment system 91 in the Y-axis direction are different from the positions of the detection areas (SB1, SB2) at both ends of the second alignment system 92.

Next, an example of alignment processing based on the second alignment mode will be described. As shown in FIG. 15A, the substrate P is disposed at the initial position. Next, as shown in FIG. 15B, the control device 5 detects the alignment marks m1 to m6 of the first group G1 with the first alignment system 91.

Next, as shown in FIG. 15C, the control device 5 detects the alignment marks m1 and m6 of the third group G3 with the second alignment system 92.

The control device 5 derives the position of the substrate P and the positions of the exposure areas PA1 to PA6 based on the detection result of the alignment system 9, and starts exposure of the exposure areas PA1 to PA6.

In the present embodiment, the first exposure area PA1 is first exposed among the plurality of exposure areas PA1 to PA6. As shown in FIG. 15D, the first exposure area PA1 is arranged at the exposure start position, and the exposure of the first exposure area PA1 is started.

In the present embodiment, the positions of the detection areas (SA1, SA6) at both ends of the first alignment system 91 in the Y-axis direction are different from the positions of the detection areas (SB1, SB2) at both ends of the second alignment system 92. From the position (alignment position) of the substrate stage 2 where the alignment marks m1, m6 on the substrate P held by the substrate stage 2 are arranged in the detection areas SB1, SB2 of the second alignment system 92, the first exposure area PA1. The distance to the exposure start position of the substrate stage 2 arranged at the −X side end of the projection regions PR2, PR4, PR6 can be shortened. That is, the movement distance of the substrate stage 2 when changing from the state shown in FIG. 15C to the state shown in FIG. 15D can be shortened. In the present embodiment, as shown in FIG. 15C, when the substrate stage 2 is arranged at the alignment position, the projection areas PR1 to PR7 and the first exposure area PA1 that is first exposed with respect to the Y-axis direction. The position of is almost the same. Thus, since the moving distance of the substrate stage 2 can be shortened, a decrease in throughput can be suppressed.

<Fourth embodiment>
Next, a fourth embodiment will be described. In the following description, the same or equivalent components as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

FIG. 16 is a diagram illustrating an example of the alignment system 9 according to the fourth embodiment. In the present embodiment, the distance LX1 between the detection areas SA1 to SA6 of the first alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92 and the alignment of the first group G1 on the substrate P in the X-axis direction. The distances LX2 between the marks m1 to m6 and the alignment marks m1 to m6 of the third group G3 are substantially the same.

In the present embodiment, when the alignment marks m1 to m6 are detected in the second alignment mode, the detection of the alignment marks m1 to m6 of the first group G1 using the first alignment system 91 and the second alignment system 92 using the second alignment system 92 are performed. The detection of the alignment marks m1 and m6 of the three groups G3 can be performed simultaneously. Therefore, a decrease in throughput can be suppressed.

The substrate P in the first to fourth embodiments is not limited to a glass substrate for a display device, but also a semiconductor wafer for manufacturing a semiconductor device, a ceramic wafer for a thin film magnetic head, or a mask used in an exposure apparatus. Alternatively, a reticle original (synthetic quartz, silicon wafer) or the like is applied.

As the exposure apparatus EX, a step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the substrate P with the exposure light EL through the pattern of the mask M by moving the mask M and the substrate P synchronously. In addition, the pattern of the mask M is collectively exposed while the mask M and the substrate P are stationary, and is applied to a step-and-repeat type projection exposure apparatus (stepper) that sequentially moves the substrate P stepwise. Can do.

The present invention also relates to a twin-stage type exposure having a plurality of substrate stages as disclosed in US Pat. No. 6,341,007, US Pat. No. 6,208,407, US Pat. No. 6,262,796, and the like. It can also be applied to devices.

Further, the present invention relates to a substrate stage for holding a substrate as disclosed in US Pat. No. 6,897,963, European Patent Application No. 1713113, etc., and a reference mark without holding the substrate. The present invention can also be applied to an exposure apparatus that includes a formed reference member and / or a measurement stage on which various photoelectric sensors are mounted. An exposure apparatus including a plurality of substrate stages and measurement stages can be employed.

The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a liquid crystal display element or a display, but an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate P, a thin film magnetic head, an image sensor (CCD) In addition, the present invention can be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle, mask, or the like.

In each of the above-described embodiments, the position information of each stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited to this. For example, a scale (diffraction grating) provided in each stage You may use the encoder system which detects this.

In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in US Pat. No. 6,778,257, a variable shaped mask (also called an electronic mask, an active mask, or an image generator) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. ) May be used. Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element.

The exposure apparatus EX of the above-described embodiment is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

As shown in FIG. 17, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for manufacturing a mask (reticle) based on the design step, and a substrate which is a base material of the device. Manufacturing step 203, including substrate processing (exposure processing) including exposing the substrate with exposure light using a mask pattern and developing the exposed substrate (photosensitive agent) according to the above-described embodiment The substrate is manufactured through a substrate processing step 204, a device assembly step (including processing processes such as a dicing process, a bonding process, and a packaging process) 205, an inspection step 206, and the like. In step 204, the photosensitive agent is developed to form an exposure pattern layer (developed photosensitive agent layer) corresponding to the mask pattern, and the substrate is processed through the exposure pattern layer. It is.

It should be noted that the requirements of the above-described embodiments and modifications can be combined as appropriate. Some components may not be used. In addition, as long as it is permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated herein by reference.

DESCRIPTION OF SYMBOLS 1 ... Mask stage, 2 ... Substrate stage, 5 ... Control apparatus, 9 ... Alignment system, 91 ... 1st alignment system, 92 ... 2nd alignment system, EL ... Exposure light, IL1-IL7 ... Illumination module, IR1-IR7 ... Illumination area, IS ... illumination system, M ... mask, m1-m6 ... alignment mark, P ... substrate, PA1-PA6 ... exposure area, PL1-PL7 ... projection optical system, PR1-PR7 ... projection area, PS ... projection system, SA1 to SA6 ... detection area, SB1, SB2 ... detection area

Claims

An exposure apparatus that sequentially exposes a plurality of exposure target areas of the substrate with exposure light while moving the substrate in a scanning direction with respect to an irradiation area that can be irradiated with exposure light,
In the irradiation state in the acceleration state between the first position and the second position in the scanning direction, in the settling state in the vicinity of the second position, and in the constant speed state between the second position and the third position. A substrate stage that holds the substrate and is movable to one side with respect to the scanning direction;
The first exposure of the plurality of exposure target regions is performed at a position on the other side with respect to the scanning direction with respect to the irradiation region and at least at a distance between the first position and the second position. An alignment system having a detection region in which an alignment mark on the substrate adjacent to one exposure target region can be arranged, and deriving a position of the first exposure target region;
An exposure apparatus comprising:
2. The exposure apparatus according to claim 1, wherein the first position is a position where the first exposure target area is disposed outside the irradiation area.
3. The exposure apparatus according to claim 1, wherein the alignment mark on the substrate held by the substrate stage disposed at the first position is disposed in the detection region.
The at least one of the second position and a predetermined position between the second position and the third position includes an exposure start position at which one end of the exposure target area is arranged in at least a part of the irradiation area. The exposure apparatus according to any one of claims 1 to 3.
5. The exposure apparatus according to claim 1, wherein the first exposure target area is exposed while moving to one side with respect to the scanning direction with respect to the irradiation area.
The exposure apparatus according to any one of claims 1 to 5, wherein a plurality of the detection areas are arranged in a second direction substantially orthogonal to the scanning direction.
The alignment system includes: a first alignment system in which the detection region is disposed on one side with respect to the irradiation direction with respect to the irradiation region; and a second alignment system disposed on the other side. The exposure apparatus according to any one of the above.
Based on the result of detection of the predetermined alignment mark on the substrate by the first alignment system and the result of detection of the predetermined alignment mark by the second alignment system, the detection region of the first alignment system and the The exposure apparatus according to claim 7, further comprising a processing device that derives a positional relationship with the detection region of the second alignment system.
Based on the result of detection of the reference mark on the substrate stage by the first alignment system and the result of detection of the reference mark by the second alignment system, the detection area of the first alignment system and the second alignment 8. The exposure apparatus according to claim 7, further comprising a processing device for deriving a positional relationship with the detection area of the system.
Each of the first and second alignment systems has a plurality of detection regions in a second direction substantially orthogonal to the scanning direction,
The exposure apparatus according to claim 7, wherein the number of detection areas of the second alignment system is smaller than the number of detection areas of the first alignment system.
11. The exposure apparatus according to claim 10, wherein a distance between detection areas at both ends of the first alignment system in the second direction is substantially the same as a distance between detection areas at both ends of the second alignment system.
12. The exposure apparatus according to claim 11, wherein the positions of the detection areas at both ends of the first alignment system in the second direction are substantially the same as the positions of the detection areas at both ends of the second alignment system.
12. The exposure apparatus according to claim 11, wherein the positions of the detection areas at both ends of the first alignment system in the second direction are different from the positions of the detection areas at both ends of the second alignment system.
The exposure apparatus according to any one of claims 11 to 13, wherein the first alignment system and the second alignment system detect the same alignment mark on the substrate using detection regions at both ends.
Using the exposure apparatus according to any one of claims 1 to 14, exposing the substrate coated with a photosensitive agent;
Developing the photosensitive agent exposed by exposure of the substrate to form an exposure pattern layer;
Processing the substrate through the exposed pattern layer;
A device manufacturing method including:
An exposure method that sequentially exposes a plurality of exposure target regions of the substrate with exposure light while moving the substrate in a scanning direction with respect to an irradiation region that can be irradiated with exposure light,
Performing a first exposure process for sequentially exposing a plurality of exposure target areas while irradiating the irradiation area with the exposure light;
Arranging an alignment mark on the substrate on which the first exposure process has been performed in a detection area of an alignment system, and performing an alignment process for deriving a position of the exposure target area;
Performing a second exposure process of sequentially exposing the plurality of exposure target areas on the substrate on which the first exposure process and the alignment process have been performed while irradiating the irradiation area with the exposure light;
Including
Among the plurality of exposure target areas, a moving direction with respect to the scanning direction when exposing a first exposure target area that is first exposed in the first exposure process, and a first exposure time in the second exposure process. An exposure method in which the moving direction with respect to the scanning direction when exposing one exposure target area is the same.
A movement trajectory of the substrate with respect to the irradiation region when sequentially exposing a plurality of the exposure target regions in the first exposure process;
17. The exposure method according to claim 16, wherein movement trajectories of the substrate with respect to the irradiation region when the plurality of exposure target regions are sequentially exposed in the second exposure processing are substantially the same.
The substrate is in an accelerated state between the first position and the second position in the scanning direction, in a settling state in the vicinity of the second position, and in a constant speed state between the second position and the third position, Moved to one side with respect to the scanning direction,
The first position is a position where the first exposure target area is disposed outside the irradiation area,
At least one of the second position and the predetermined position between the second position and the third position is an exposure start position at which one end of the first exposure target area is arranged in at least a part of the irradiation area. ,
The detection area is located on the other side with respect to the irradiation direction with respect to the irradiation area and at least at a distance between the first position and the second position. The exposure method according to claim 16 or 17, wherein an alignment mark on the adjacent substrate is detected.
After detection of the alignment mark,
The exposure method according to claim 18, wherein the first exposure target area is exposed while moving to one side with respect to the scanning direction with respect to the irradiation area.
Multiple substrates are exposed sequentially,
Of the plurality of substrates, all of the plurality of alignment marks adjacent to the exposure target regions of the first substrate are detected, and the position of the first substrate and the position of each exposure target region on the first substrate are derived. Performing a first alignment mode,
A position of the second substrate is detected based on a detection result of the predetermined alignment mark and a derived result of the first alignment mode by detecting a predetermined alignment mark on the second substrate among the plurality of substrates. And performing a second alignment mode for deriving the position of each exposure target area on the second substrate,
The exposure method according to claim 19, wherein exposure of the first exposure target area is started after executing the second alignment mode.
Using the exposure method according to any one of claims 16 to 20, exposing the substrate coated with a photosensitive agent;
Developing the photosensitive agent exposed by exposure of the substrate to form an exposure pattern layer;
Processing the substrate through the exposed pattern layer;
A device manufacturing method including: