JP6727554B2 - Exposure apparatus, flat panel display manufacturing method, device manufacturing method, and exposure method - Google Patents

Description

The present invention relates to an exposure apparatus, a flat panel display manufacturing method, a device manufacturing method, and an exposure method, and more specifically, a predetermined pattern is formed by scanning an object with an energy beam in a predetermined scanning direction. The present invention relates to an exposure apparatus and method for forming on an object, and a method for manufacturing a flat panel display or device including the exposure apparatus or method.

Conventionally, in a lithography process for manufacturing an electronic device (micro device) such as a liquid crystal display device and a semiconductor device (an integrated circuit etc.), a pattern formed on a mask or a reticle (hereinafter referred to as “mask”) is converted into an energy beam. There is used an exposure apparatus that transfers the image onto a glass plate or a wafer (hereinafter, collectively referred to as “substrate”).

This type of exposure apparatus is a beam that forms a predetermined pattern on a substrate by scanning exposure illumination light (energy beam) in a predetermined scanning direction with the mask and the substrate substantially stationary. A scan type scanning exposure apparatus is known (see, for example, Patent Document 1).

In the exposure apparatus described in Patent Document 1, the projection optical system is moved while moving the projection optical system in the direction opposite to the scanning direction at the time of exposure in order to correct the positional error between the exposure target area on the substrate and the mask. The alignment microscope is used to measure the marks on the substrate and the mask (alignment measurement), and the positional error between the substrate and the mask is corrected based on the measurement result. In this case, by moving the projection optical system and the alignment microscope during alignment measurement, the relative positions of the projection optical system and the alignment microscope may fluctuate, which may deteriorate the alignment measurement accuracy.

Japanese Patent Laid-Open No. 2000-12422

The present invention has been made under the above circumstances, and according to the first aspect thereof, the light from the illumination system is emitted to the object through the projection optical system, and the illumination system and the illumination system are applied to the object. An exposure apparatus for performing a scanning exposure on the object by relatively moving the projection optical system in the scanning direction to form a predetermined pattern on the object, the first drive system moving the illumination system in the scanning direction. And a second drive system for moving the projection optical system in the scanning direction, and information about positions for moving the illumination system and the projection optical system in the scanning direction by the first and second driving systems. An acquisition unit, and a control system that controls the first and second drive systems so that the change in the positional relationship between the illumination system and the projection optical system falls within a predetermined range based on the information in the scanning exposure. And the acquisition unit includes a light receiving unit that receives light that passes through the projection optical system, and the first drive system has a first incident position of light from the illumination system with respect to the projection optical system. The illumination system is moved so as to move from the position to the second position, and the acquisition unit acquires the information based on the light reception result of the light reception unit when the incident position of the light is the first and second positions. get to exposure light device, Ru is provided.

According to a second aspect of the present invention , there is provided an exposure device which forms a pattern on the object by a scanning exposure operation of scanning an object with an energy beam in the scanning direction, and is provided so as to be movable in the scanning direction. And a first drive system for moving the first mark detection system in the scanning direction, and a first drive system for moving the first mark detection system in the scanning direction. A second mark detection system which is provided on the object and can detect the object side mark provided on the object, a second drive system which moves the second mark detection system in the scanning direction, and the first and second marks A control device that performs relative alignment between the pattern holder and the object based on an output of a detection system, and an element that constitutes the first drive system and an element that constitutes the second drive system. DOO is at least partially common der Ru eXPOSURE device, Ru is provided.

According to a third aspect of the present invention , a flat plate including exposing the object using the exposure apparatus according to the first or second aspect and developing the exposed object. method for producing a panel display, Ru is provided.

According to a fourth aspect of the present invention, a device including exposing the object using the exposure apparatus according to any one of the first and second aspects and developing the exposed object. manufacturing method, Ru is provided.

According to a fifth aspect of the present invention , the light from the illumination system is emitted to the object via the projection optical system, and the illumination system and the projection optical system are moved relative to the object in the scanning direction, A method of exposing a predetermined pattern on the object by performing scanning exposure on the object , comprising: moving the illumination system in the scanning direction using a first drive system; and using a second drive system. Obtaining information about a position for moving the projection optical system in the scanning direction and a position for moving the illumination system and the projection optical system by the first and second drive systems in the scanning direction using an acquisition unit. And, in the scanning exposure, controlling the first and second drive systems based on the information so that the change in the positional relationship between the illumination system and the projection optical system falls within a predetermined range. seen including, above by moving the illumination system, the allowed incidence position of the light from the illumination system to the projection optical system moves the illumination system to move from the first position to the second position, the projection optical system Further including receiving light passing through the light receiving section using a light receiving section, wherein the acquiring includes using the acquisition section to receive the light when the incident position of the light is the first and second positions. eXPOSURE method for acquiring the information based on the light receiving result of the section is, Ru is provided.

According to a sixth aspect of the present invention , there is provided an exposure method of forming a pattern on the object by a scanning exposure operation of scanning an object with an energy beam in the scanning direction, the method being provided so as to be movable in the scanning direction. Detecting the pattern-side mark of the pattern holder having the pattern by using the first mark detection system, and moving the first mark detection system in the scanning direction using the first drive system. And detecting an object side mark provided on the object using a second mark detection system movably provided in the scanning direction, and second driving the second mark detection system in the scanning direction. and moving with the system, based on an output of the first and second mark detection system, anda performing the relative positioning between the pattern carrier and the object, the first driving and elements that make up the elements constituting the system the second drive system is at least partially common der Ru eXPOSURE method, Ru is provided.

According to a seventh aspect of the present invention , a flat surface including exposing the object using the exposure method according to any one of the fifth and sixth aspects and developing the exposed object. method for producing a panel display, Ru is provided.

According to an eighth aspect of the present invention, a device comprising exposing the object using the exposure method according to any one of the fifth and sixth aspects and developing the exposed object. manufacturing method, Ru is provided.

It is a conceptual diagram of the liquid crystal exposure apparatus which concerns on one Embodiment. FIG. 2 is a block diagram showing an input/output relationship of a main control unit that mainly constitutes a control system of the liquid crystal exposure apparatus of FIG. 1. 3A to 3C are views for explaining the operation of the calibration sensor included in the liquid crystal exposure apparatus of FIG. 4A to 4D are views (No. 1 to No. 4) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation. It is a graph produced|generated in the calibration of an illumination system and a projection optical system. It is a figure which shows the mark image formed in a projection area|region in the calibration of an illumination system and a projection optical system. It is a figure which shows the other example of the calibration of an illumination system and a projection optical system.

Hereinafter, one embodiment will be described with reference to FIGS. 1 to 4D.

FIG. 1 shows a conceptual diagram of a liquid crystal exposure apparatus 10 according to an embodiment. The liquid crystal exposure apparatus 10 is of a step-and-scan system in which a rectangular (square) glass substrate P (hereinafter, simply referred to as a substrate P) used in, for example, a liquid crystal display device (flat panel display) is an exposure target. It is a projection exposure apparatus, a so-called scanner.

The liquid crystal exposure apparatus 10 includes an illumination system 20 that emits illumination light IL that is an energy beam for exposure, and a projection optical system 40. Hereinafter, a direction parallel to the optical axis of the illumination light IL emitted from the illumination system 20 to the substrate P via the projection optical system 40 will be referred to as a Z-axis direction, and X-axes orthogonal to each other in a plane orthogonal to the Z-axis. And the Y-axis will be set and explained. Further, in the coordinate system of the present embodiment, the Y axis is assumed to be substantially parallel to the direction of gravity. Therefore, the XZ plane is substantially parallel to the horizontal plane. Further, the rotation (tilt) direction around the Z axis will be described as the θz direction.

Here, in the present embodiment, a plurality of exposure target areas (which will be appropriately referred to as partition areas or shot areas) are set on one substrate P, and mask patterns are sequentially transferred to these plurality of shot areas. To be done. In the present embodiment, a case will be described in which four partitioned areas are set on the substrate P (so-called four-chamfered area), but the number of partitioned areas is not limited to this and can be changed as appropriate. is there.

Further, in the liquid crystal exposure apparatus 10, a so-called step-and-scan type exposure operation is performed, but during the scan exposure operation, the mask M and the substrate P are kept substantially stationary, and the illumination system 20 and the projection optical system. 40 (illumination light IL) relatively moves with respect to the mask M and the substrate P in a long stroke in the X-axis direction (appropriately referred to as a scanning direction) (see the white arrow in FIG. 1 ). On the other hand, during the step operation for changing the partitioned area to be exposed, the mask M is stepwise moved in the X-axis direction by a predetermined stroke, and the substrate P is stepwise moved in the Y-axis direction by a predetermined stroke (see FIGS. (See black arrow 1).

FIG. 2 is a block diagram showing an input/output relationship of a main controller 90 that integrally controls each component of the liquid crystal exposure apparatus 10. As shown in FIG. 2, the liquid crystal exposure apparatus 10 includes an illumination system 20, a mask stage device 30, a projection optical system 40, a substrate stage device 50, an alignment system 60, a calibration sensor 70, and the like.

The illumination system 20 includes an illumination system body 22 including a light source (for example, a mercury lamp) of the illumination light IL (see FIG. 1). During the scan exposure operation, main controller 90 controls drive system 24 including, for example, a linear motor to scan drive illumination system body 22 in the X-axis direction with a predetermined long stroke. The main controller 90 obtains position information of the illumination system main body 22 in the X-axis direction via the measurement system 26 including, for example, a linear encoder, and controls the position of the illumination system main body 22 based on the position information. In the present embodiment, for example, g-line, h-line, i-line, etc. are used as the illumination light IL.

The mask stage device 30 includes a stage body 32 that holds the mask M. The stage main body 32 is configured to be capable of stepwise movement in the X-axis direction and the Y-axis direction by a drive system 34 including, for example, a linear motor. During the step operation for changing the partitioned area to be exposed in the X-axis direction, main controller 90 controls drive system 34 to step-drive stage body 32 in the X-axis direction. Further, as will be described later, during a step operation for changing the scan exposure area (position) in the partitioned area of the exposure target with respect to the Y-axis direction, main controller 90 controls drive system 34 to cause the stage to move. The main body 32 is step-driven in the Y-axis direction. The drive system 34 can also appropriately finely drive the mask M in the three-degree-of-freedom (X, Y, θz) directions in the XY plane during the alignment operation described later. The position information of the mask M is obtained by the measurement system 36 including, for example, a linear encoder.

The projection optical system 40 includes a projection system main body 42 including an optical system that forms an erect normal image of a mask pattern on the substrate P (see FIG. 1) in a unity magnification system. The projection system main body 42 is arranged in a space formed between the substrate P and the mask M (see FIG. 1). During the scan exposure operation, main controller 90 controls drive system 44 including, for example, a linear motor to cause projection system main body 42 to have a predetermined length in the X-axis direction so as to synchronize with projection system main body 22. Scan drive by stroke. The main controller 90 obtains position information in the X-axis direction of the projection system main body 42 via a measurement system 46 including a linear encoder, and controls the position of the projection system main body 42 based on the position information.

Returning to FIG. 1, in the liquid crystal exposure apparatus 10, when the illumination area IAM on the mask M is illuminated by the illumination light IL from the illumination system 20, the illumination light IL that has passed through the mask M passes through the projection optical system 40. The projected image (partial erect image) of the mask pattern in the illumination area IAM is formed in the irradiation area (exposure area IA) of the illumination light IL that is conjugate with the illumination area IAM on the substrate P. Then, the scanning exposure operation is performed by the relative movement of the illumination light IL (the illumination area IAM and the exposure area IA) in the scanning direction with respect to the mask M and the substrate P. That is, in the liquid crystal exposure apparatus 10, the pattern of the mask M is generated on the substrate P by the illumination system 20 and the projection optical system 40, and the sensitive layer (resist layer) on the substrate P is exposed by the illumination light IL to expose the substrate P. The pattern is formed on.

Here, in the present embodiment, the illumination area IAM generated on the mask M by the illumination system 20 includes a pair of rectangular areas that are separated in the Y-axis direction. The length of one rectangular area in the Y-axis direction is, for example, 1 of the length of the pattern surface of the mask M in the Y-axis direction (that is, the length of each partitioned area set on the substrate P in the Y-axis direction). It is set to /4. The interval between the pair of rectangular regions is also set to, for example, 1/4 of the length of the pattern surface of the mask M in the Y-axis direction. Therefore, the exposure area IA generated on the substrate P also includes a pair of rectangular areas that are separated in the Y-axis direction. In the present embodiment, in order to completely transfer the pattern of the mask M onto the substrate P, it is necessary to perform the scanning exposure operation twice for one divided area, but the illumination system main body 22 and the projection system main body 42. Has the advantage of being smaller. A specific example of the scanning exposure operation will be described later.

The substrate stage device 50 includes a stage body 52 that holds the back surface (the surface opposite to the exposure surface) of the substrate P. Returning to FIG. 2, during the step operation for changing the partitioned area of the exposure target in the Y-axis direction, main controller 90 controls drive system 54 including, for example, a linear motor to move stage body 52 to Y. Step drive in the axial direction. The drive system 54 can also finely drive the substrate P in the three degrees of freedom (X, Y, θz) directions in the XY plane during the substrate alignment operation described later. The position information of the substrate P (stage body 52) is obtained by the measurement system 56 including, for example, a linear encoder.

Returning to FIG. 1, the alignment system 60 includes an alignment microscope 62. The alignment microscope 62 is arranged in a space formed between the substrate P and the mask M (a position between the substrate P and the mask M in the Z-axis direction), and the alignment mark Mk formed on the substrate P. (Hereinafter, simply referred to as mark Mk) and a mark (not shown) formed on the mask M are detected. In the present embodiment, one mark Mk is formed near each of the four corners of each partitioned region (for example, four for each partitioned region), and the mark of the mask M is a mark through the projection optical system 40. It is formed at a position corresponding to Mk. The numbers and positions of the marks Mk and the marks of the mask M are not limited to this, and can be changed as appropriate. Further, in each drawing, the mark Mk is shown larger than it actually is in order to facilitate understanding.

The alignment microscope 62 is arranged on the +X side of the projection system main body 42. The alignment microscope 62 has a pair of detection fields of view (detection regions) that are separated in the Y-axis direction, and can simultaneously detect, for example, two marks Mk that are separated in the Y-axis direction in one partitioned region. It is like this.

Further, the alignment microscope 62 can detect the mark formed on the mask M and the mark Mk formed on the substrate P at the same time (in other words, without changing the position of the alignment microscope 62). .. The main controller 90, for example, each time the mask M performs an X-step operation or the substrate P performs a Y-step operation, relative positional deviation information between the mark formed on the mask M and the mark Mk formed on the substrate P. Then, relative positioning of the substrate P and the mask M in the directions along the XY plane is performed so as to correct (cancel or reduce) the positional deviation. In the alignment microscope 62, a mask detection unit that detects (observes) the mark of the mask M and a substrate detection unit that detects (observes) the mark Mk of the substrate P are integrally configured by a common housing or the like. And is driven by the drive system 66 (see FIG. 2) via the common housing. Alternatively, the mask detection unit and the substrate detection unit may be configured by separate housings, and in that case, for example, the mask detection unit and the substrate detection unit are substantially equivalent by a common drive system 66. It is preferable to be configured so as to be movable with operating characteristics.

Main controller 90 (see FIG. 2) drives alignment microscope 62 with a predetermined long stroke in the X-axis direction by controlling drive system 66 including, for example, a linear motor. The main controller 90 also obtains position information of the alignment microscope 62 in the X-axis direction via a measuring system 68 including a linear encoder, and controls the position of the alignment microscope 62 based on the position information. The positions of the projection system main body 42 and the alignment microscope 62 in the Y-axis direction are substantially the same, and their movable ranges partially overlap each other. Further, the drive system 66 for driving the alignment microscope 62 and the drive system 44 for driving the projection system main body 42 share some parts such as a linear motor and a linear guide for driving in the X-axis direction. The characteristics, or the control characteristics of the main control device 90 are configured to be substantially the same.

Main controller 90 (see FIG. 2) detects a plurality of marks Mk formed on substrate P using alignment microscope 62, and based on the detection result (positional information of a plurality of marks Mk), a known method is known. The enhanced global alignment (EGA) method is used to calculate the array information (including information regarding the position (coordinate value) and shape of the partitioned area) of the partitioned area in which the mark Mk to be detected is formed.

Specifically, in the scanning exposure operation, the main control device 90 (see FIG. 2) uses the alignment microscope 62 arranged on the +X side of the projection system main body 42 to at least expose the object to be exposed, prior to the scanning exposure operation. The position information of, for example, four marks Mk formed in the divided area is detected to calculate the array information of the divided area. The main controller 90 performs precise positioning (substrate alignment operation) of the substrate P in the three-degree-of-freedom direction in the XY plane based on the calculated array information of the partitioned areas to be exposed, and the illumination system 20 and the projection. By appropriately controlling the optical system 40, the scanning exposure operation (transfer of the mask pattern) is performed on the target partitioned area.

Next, the specifics of the measurement system 46 (see FIG. 2) for obtaining the position information of the projection system body 42 of the projection optical system 40 and the measurement system 68 for obtaining the position information of the alignment microscope 62 of the alignment system 60. A typical configuration will be described.

As shown in FIG. 3A, the liquid crystal exposure apparatus 10 has a guide 80 for guiding the projection system main body 42 in the scanning direction. The guide 80 is composed of a member extending parallel to the scanning direction. The guide 80 also has a function of guiding the movement of the alignment microscope 62 in the scanning direction. Further, although the guide 80 is illustrated between the mask M and the substrate P in FIG. 3A, the guide 80 is actually arranged at a position avoiding the optical path of the illumination light IL in the Y-axis direction. Has been done.

A scale 82 including a reflection type diffraction grating having a periodic direction at least in a direction parallel to the scanning direction (X-axis direction) is fixed to the guide 80. Further, the projection system main body 42 has a head 84 which is arranged so as to face the scale 82. In the present embodiment, the scale 82 and the head 84 form an encoder system that constitutes a measurement system 46 (see FIG. 2) for obtaining position information of the projection system body 42. In addition, the alignment microscope 62 has a head 86 arranged so as to face the scale 82. In the present embodiment, the scale 82 and the head 86 form an encoder system that constitutes a measurement system 68 (see FIG. 2) for obtaining position information of the alignment microscope 62. Here, the heads 84 and 86 respectively irradiate the scale 82 with a beam for encoder measurement, receive a beam that has passed through the scale 82 (a reflected beam by the scale 82), and based on the light reception result, the scale 82. It is possible to output position information relative to.

As described above, in the present embodiment, the scale 82 constitutes the measurement system 46 (see FIG. 2) for obtaining the position information of the projection system main body 42, and the measurement system 68 (for obtaining the position information of the alignment microscope 62 ( (See FIG. 2). That is, the projection system body 42 and the alignment microscope 62 are position-controlled based on a common coordinate system (measurement axis) set by the diffraction grating formed on the scale 82. The drive system 44 (see FIG. 2) for driving the projection system body 42 and the drive system 66 (see FIG. 2) for driving the alignment microscope 62 may have some common elements. , May be composed of completely independent elements.

The encoder system that constitutes the measurement systems 46 and 68 (see FIG. 2 respectively) may be a linear (1 DOF) encoder system in which the length measurement axis is only in the X-axis direction (scanning direction), for example. It may have more measuring axes. For example, by arranging a plurality of heads 84 and 86 at predetermined intervals in the Y-axis direction, the rotation amount of the projection system main body 42 and the alignment microscope 62 in the θz direction may be obtained. Alternatively, an XY two-dimensional diffraction grating may be formed on the scale 82, and a 3DOF encoder system having a length measuring axis in the three degrees of freedom in the X, Y, and θz directions may be used. Further, as the heads 84 and 86, by using a plurality of known two-dimensional heads capable of measuring the length in the direction orthogonal to the scale surface together with the periodic direction of the diffraction grating, the projection system main body 42 and the alignment microscope 62 can be freely moved. The position information in the degree direction may be obtained.

Returning to FIG. 1, the calibration sensor 70 is arranged on the −X side of the substrate stage device 50 independently of the substrate stage device 50. The position of the calibration sensor 70 is fixed with respect to the guide 80 and the scale 82 (see FIG. 3A, respectively). The calibration sensor 70 has a plurality of reference indices, an observation optical system, a camera, etc. (each not shown). As shown in FIG. 3A, the main controller 90 performs a known calibration operation (illuminance) on the illumination system IL and/or the projection system body 42 via the mask M and/or the projection system body 42. Calibration, focus calibration, etc.).

Here, in the present embodiment, since the projection system main body 42 and the alignment microscope 62 are guided by the common guide 80, the movement range (movement path) during a series of scanning exposure operations (including alignment measurement operation). Are duplicated (common). The calibration sensor 70 is arranged so that the calibration position is set on the movement path of the projection system main body 42 and the alignment microscope 62 (extension of the movement path for scanning exposure). That is, in the liquid crystal exposure apparatus 10, the calibration operation using the calibration sensor 70 can be performed while the projection system main body 42 and the alignment microscope 62 are moved along the movement paths during a series of scanning exposure operations. ..

Here, the main controller 90 is a reference that the mark formed on the mask M and the calibration sensor 70 have at the position shown in FIG. 3A via the mask M and the projection system main body 42 (lens). The amount of positional deviation from the mark 72 is obtained based on the output of the calibration sensor 70. After that, the main controller 90 moves the projection system main body 42 and the alignment microscope 62 in the −X direction without moving the mask M, as shown in FIG. 3B, and the mask M and the calibration sensor. The alignment microscope 62 is disposed between the alignment microscope 62 and the unit 70. Then, main controller 90 causes alignment microscope 62 to measure the mark formed on mask M and reference mark 72, and obtains the amount of positional deviation measured via projection system main body 42 and the output of alignment microscope 62. Based on this, the alignment microscope 62 is calibrated with respect to the projection system main body 42.

As shown in FIG. 3C, the calibration sensor 70 has a sensor (for example, a camera) (not shown) capable of detecting the mark 74 formed on the projection system main body 42. The main controller 90 detects the position of the mark 74 using the sensor (not shown) during the calibration operation (see FIG. 3A). Further, in the state shown in FIG. 3B, main controller 90 detects the position of alignment microscope 62. It is assumed that the distance between the reference mark 72 and the center of the detection visual field of the sensor of the calibration sensor 70 is known. Main controller 90 determines the positional relationship between projection system main body 42 and alignment microscope 62 (that is, scale 82) based on the outputs of heads 84 and 86 in the states shown in FIGS. 3B and 3C, respectively. The origin of each coordinate system) is associated with each other.

Hereinafter, an example of the operation of the liquid crystal exposure apparatus 10 during the scanning exposure operation will be described with reference to FIGS. 4(a) to 4(d). The following exposure operation is performed under the control of the main controller 90 (not shown in FIGS. 4A to 4D, see FIG. 2).

In this embodiment, the partitioned area having the first exposure order (hereinafter referred to as the first shot area S ₁ ) is set on the −X side and the −Y side of the substrate P. In addition, in FIGS. 4A to 4D, a rectangular area denoted by reference symbol A indicates a movement range (movement path) of the projection system main body 42 during the scanning exposure operation, and is denoted by reference symbol CP. The rectangular area indicates the position (calibration position) where the calibration sensor 70 (see FIG. 1) performs the calibration operation. The movement range A of the projection system body 42 is set, for example, mechanically and/or electrically. Further, the symbols S _{2 to} S ₄ attached to the partitioned areas on the substrate P indicate that the shot areas are the second to fourth exposure areas, respectively.

The main controller 90 performs a calibration operation (illuminance calibration, focus calibration, etc.) on the illumination system IL and/or the projection system main body 42 using the calibration sensor 70 before starting a series of scanning exposure operations. Perform (see FIG. 3A).

In addition to the above calibration operation, the main controller 90 obtains the position information of each of the alignment microscope 62 and the projection system main body 42 using the calibration sensor 70 (see FIGS. 3B and 3C, respectively). ), the positional relationship between the two is associated. The positions of the alignment microscope 62 and the projection system main body 42 during the following series of scanning exposure operations are controlled based on the mutual positional relationship between the alignment microscope 62 and the projection system main body 42 obtained at this time.

As shown in FIG. 4A, the main controller 90 drives the alignment microscope 62 in the +X direction so that the first shot area S ₁ and the fourth shot area S ₄ (first shot area S ₁ (For example, eight mark Mk) formed in the (+X side partitioned area) of the first shot area S ₁ is obtained based on the detection result. Thus, by obtaining a first sequence information of the shot areas S ₁ on the basis of the eight marks Mk, than obtaining the sequence information based only on the four marks Mk provided in the first shot area S _1, It is possible to obtain the array information in consideration of the statistical tendency over a wide range, and it is possible to improve the alignment accuracy regarding the first shot area S ₁ . Incidentally, considering the required alignment precision, appropriate, may be calculated first sequence information of the shot areas S ₁ using only four marks Mk of the first shot area S _1.

After calculating the array information of the first shot area S ₁ , the main controller 90, as shown in FIG. 4B, the projection system body 42 and the illumination system body 22 of the illumination system 20 (FIG. 4B). (Not shown, see FIG. 1) in synchronization with the +X direction to perform the first scanning exposure for the first shot area S ₁ .

The main controller 90 controls the illumination system 20 while controlling the minute position of the substrate P according to the calculation result of the array information and controls the illumination system IL to illuminate the illumination light IL (not shown in FIG. 4B). And a projection system main body 42 to project the light onto the substrate P to form a part of the mask pattern in an exposure area IA generated on the substrate P by the illumination light IL. As described above, in the present embodiment, the illumination area IAM (see FIG. 1) generated on the mask M and the exposure area IA generated on the substrate P are a pair of rectangular areas separated in the Y-axis direction. Therefore, the pattern image of the mask M transferred onto the substrate P by one scanning exposure operation is a pair of strip-shaped regions extending in the X-axis direction that are separated in the Y-axis direction (of the total area of one partitioned region. Half the area).

Next, main controller 90 moves the substrate P and mask M stepwise in the -Y direction as shown in FIG. 4C for the second scanning exposure operation of first shot region S ₁ (FIG. 4C). 4(c) black arrow). The amount of step movement of the substrate P at this time is, for example, 1/4 of the length of one partitioned region in the Y-axis direction. Further, in this case, in the step movement of the substrate P and the mask M in the -Y direction, the relative positional relationship between the substrate P and the mask M is not changed (or the relative positional relationship can be corrected). ) It is preferable to move in steps.

Hereinafter, as shown in FIG. 4D, main controller 90 drives projection system main body 42 in the −X direction to perform the second (return) scan exposure operation of first shot area S ₁ . As a result, the mask pattern transferred by the first scanning exposure operation and the mask pattern transferred by the second scanning exposure operation are joined in the first shot region S ₁ , and the entire pattern of the mask M is It is transferred to the first shot area S ₁ . As shown in FIG. 4C, after the substrate P and the mask M are stepwise moved in the −Y direction, alignment measurement between the substrate P and the mask M is performed again before the second scanning exposure is started. The mutual alignment may be performed based on the result. As a result, it is possible to improve the alignment accuracy of the entire first shot area S _{1 and} , consequently, the transfer accuracy of the pattern of the mask M onto the first shot area S ₁ .

Hereinafter, although not shown, the main controller 90, in order to perform the scanning exposure operation on the second shot area S _{2 (partitioned} region of the first shot area S ₁ of the + Y side), the substrate P -Y The second shot area S ₂ and the mask M are opposed to each other by stepwise moving in the direction. Since the scanning exposure operation for the second shot area S ₂ is the same as the scanning exposure operation for the first shot area S ₁ described above, the description thereof will be omitted. Hereinafter, the main controller 90 appropriately performs at least one of the X step operation of the mask M and the Y step operation of the substrate P, and performs the scanning exposure operation for the third and fourth shot areas S ₃ and S ₄ . The positional relationship between the alignment microscope 62 and the projection system main body 42 may be obtained by using the calibration sensor 70 even before performing the scanning exposure operation on the _{second to} fourth shot areas S _{2 to} S ₄ . .. Further, the alignment measurement result (EGA calculation result) of the first shot region S ₁ described above may be used when performing the alignment with respect to the fourth shot region S ₄ . In that case, when the fourth shot region S ₄ and the mask M are arranged to face each other, the three degrees of freedom in the XY plane (based on the marks of the mask M and the mark Mk of the substrate P at two points ( Since it is only necessary to measure the positional deviation in the (X, Y, θz) direction, the time required for the alignment of the fourth shot area S4 can be substantially shortened.

Here, as described above, in the scanning exposure operation, main controller 90 moves illumination system main body 22 and projection system main body 42 independently and in synchronization in a long stroke in the scanning direction. Before the start, a positioning (calibration) operation is performed with respect to the relative position of the illumination system body 22 and the projection system body 42 in the scanning direction. In the calibration operation, the main control device 90 uses the mark 74 formed on the projection system main body 42 to position the projection system main body 42 at a predetermined position (the projection system main body 42 The image formed via the calibration sensor 70 is positioned at a position), and then the illumination system main body 22 is moved in the scanning direction, and illumination light is applied to a predetermined calibration mark (not shown). IL is irradiated, and an image of the mark is formed on the calibration sensor 70 via the projection system main body 42 (projection lens) (see FIG. 3A). As the calibration mark, for example, a slit mark, a mark having a periodic pattern, or the like can be used. Note that the calibration mark may be formed on the mask M or may be formed on a member other than the mask M (for example, a member dedicated to calibration).

When a slit-shaped mark is used as the calibration mark, the graph of FIG. 5 is obtained from the output of the calibration sensor 70 as an example. In the graph of FIG. 5, the vertical axis represents the light intensity of the illumination light IL, and the horizontal axis represents the position of the illumination system body 22 in the X-axis direction. The main controller 90 positions the illumination system main body 22 by acquiring information on the X position corresponding to the vicinity of the peak of the light intensity from the graph shown in FIG. The information includes information on the X position of the illumination system body 22, information on the X position of the illumination system body 22 with respect to the projection system body 42, information on the difference between the X positions of the illumination system body 22 and the projection system body 42, and the illumination system body 22. The position correction information is for adjusting the position of X to the X position of the projection system body 42. Then, during the following scanning exposure operation, the position control of the projection system main body 42 and the illumination system main body 22 is performed so that the relative positional relationship between the projection system main body 42 and the illumination system main body 22 at the time of completion of the positioning is substantially maintained. .. In this calibration operation, the relative positional relationship between the projection system main body 42 and the illumination system main body 22 does not need to be exactly reproduced, and the light intensity at the peak is generally maintained (the desired light intensity is obtained). Within the range), a slight positional deviation of the relative positional relationship between the projection system main body 42 and the illumination system main body 22 is allowed.

Further, similarly to the relative positioning operation at the time of calibration, it is not necessary that the illumination system main body 22 and the projection system main body 42 move in strict synchronization (at the same speed and in the same direction) during the scanning exposure operation. , A predetermined relative position error is allowed. That is, if the relative positions of the illumination system body 22 and the projection system body 42 are displaced during the scanning exposure operation, the projection system body 42 (projection lens) of the projection system body 42 for forming an image of the mask pattern on the substrate P is displaced. Although the image forming characteristic changes, if the image deformation of the mask pattern does not occur due to the change of the image forming characteristic, the change of the image forming characteristic is allowed as it does not affect the overlay accuracy of the patterns. To be done. FIG. 6 shows calibration marks projected in the projection area IA (image field) formed by the projection system body 42. As shown in FIG. 6, the imaging characteristics of the projection system main body 42 change, and before and after the change (see the arrow in FIG. 6), the calibration mark image formed in the image field is displaced. However, if the image collapse does not occur when the mask pattern is actually transferred to the substrate P, the change range of the image forming characteristic can be regarded as the allowable range, and thus the illumination system main body 22 during the scanning exposure operation can be considered. A slight relative position error with the projection system body 42 is allowed.

Further, the main controller 90 performs the wavefront aberration correction of the projection system main body 42, that is, the imaging performance correction, together with the calibration operation (relative alignment operation) of the illumination system main body 22 and the projection system main body 42. .. The main controller 90 controls the wavefront aberration of the projection system main body 42 in a state where the relative alignment between the illumination system main body 22 and the projection system main body 42 is completed (that is, the light intensity reaches a peak in the graph of FIG. 5). Calculated using Zernike polynomials. The method of measuring the wavefront aberration is not particularly limited, but may be measured using the wavefront aberration measuring mark of the mask M or a Shack-Hartmann wavefront sensor, for example. The main controller 90 corrects the above-mentioned aberration using a correction optical system (not shown) included in the projection system main body 42 (projection lens). In the present embodiment, the wavefront aberration is measured and corrected, but other aberrations (for example, Seidel aberration) may be measured and corrected.

Further, the calibration method for adjusting (positioning) the relative positional relationship between the illumination system body 22 and the projection system body 42 is not limited to the one described above, and can be appropriately changed. That is, as described above, since the illumination system main body 22 and the projection system main body 42 allow a slight positional deviation, the positioning accuracy between the two may be relatively rough. Therefore, as shown in FIG. 7, by bringing the illumination system main body 22 and the projection system main body 42 into contact with the mechanical block 78 that is a fixing member for positioning (see the white arrow in FIG. 7), It is also possible to mechanically perform calibration (positioning) between the illumination system body 22 and the projection system body 42.

The timing of performing the calibration operation is not particularly limited, but may be performed at a predetermined timing according to the number of processed substrates P, or according to the total movement distance of the illumination system body 22 and the projection system body 42. You can go. Further, a temperature sensor may be installed in the exposure apparatus 10, and calibration may be performed when there is a possibility that position measurement errors of the illumination system main body 22 and the projection system main body 42 due to temperature changes may occur.

According to the liquid crystal exposure apparatus 10 according to the embodiment described above, the detection system that detects the mark on the mask M and the detection system that detects the mark Mk on the substrate P are substantially common in the scanning direction. Since it is moved by the drive system, it is possible to improve the alignment measurement accuracy in a beam scanning type scanning exposure apparatus such as the liquid crystal exposure apparatus 10 of the present embodiment.

Further, since the projection system main body 42 and the alignment microscope 62 also move by a substantially common drive system in the scanning direction, it is possible to improve the exposure accuracy based on the alignment measurement result by the alignment microscope 62.

Further, since the calibration position by the calibration sensor 70 is provided on the movement path of the alignment microscope 62 and the projection system main body 42 (see FIGS. 4A to 4D), the calibration operation is performed. A time loss (so-called decrease in tact time) due to the operation can be suppressed.

The configuration of the embodiment described above can be modified as appropriate. For example, the calibration sensor 70 (calibration position) may be provided also on the −X side of the substrate stage device 50.

Further, in the above-described embodiment, the position information of the projection system main body 42 and the alignment microscope 62 is obtained by the encoder system in which the coordinate system is defined by the scale 82, but the configuration of the measurement system is not limited to this, and, for example, optical Other measurement systems such as an interferometer system may be used.

Further, in the above-described embodiment, one set of alignment microscopes 62 having a pair of detection fields of view is arranged on the +X side of the projection system main body 42, but the number of alignment microscopes is not limited to this. For example, two alignment microscopes may be used, and the alignment microscopes 62 may be arranged on the +X side and the −X side (one side and the other side of the scanning direction) of the projection system main body 42, respectively. In this case, before the second scanning exposure operation (that is, the scanning exposure operation performed by moving the projection system main body 42 in the −X direction) for each divided area, the mark Mk is formed using the −X side alignment microscope 62. By the detection, it is possible to improve the alignment accuracy of the entire first shot area S ₁ and eventually the transfer accuracy of the pattern of the mask M to the first shot area S ₁ while suppressing time loss.

In the above embodiment, after the scanning exposure of the first shot area S ₁ , the scanning exposure of the second shot area S ₂ set on the +Y (upper) side of the first shot area S ₁ is performed. The invention is not limited to this, and the scanning exposure of the fourth shot area S ₄ may be performed after the scanning exposure of the first shot area S ₁ . In this case, for example, by using a mask facing the first shot region S ₁ and a mask corresponding to the fourth shot region S ₄ (two masks in total), the first and fourth shot regions S ₁ , S ₄ can be continuously scanned and exposed. Further, after the scanning exposure of the first shot area S ₁ , the mask M may be step-moved in the +X direction to perform the scanning exposure of the fourth shot area S ₄ .

Further, in the above-described embodiment, the mark Mk is formed in each divided area (first to fourth shot areas S _{1 to} S ₄ ), but the invention is not limited to this, and an area between adjacent divided areas (so-called scribe). Line) may be formed.

Further, in the above-described embodiment, a pair of the illumination area IAM and the exposure area IA separated in the Y-axis direction are generated on the mask M and the substrate P (see FIG. 1), but the shapes of the illumination area IAM and the exposure area IA are formed. The length is not limited to this and can be changed as appropriate. For example, the lengths of the illumination area IAM and the exposure area IA in the Y-axis direction may be equal to the lengths of the pattern surface of the mask M and one partitioned area on the substrate P in the Y-axis direction. In this case, the transfer of the mask pattern is completed by one scanning exposure operation for each divided area. Alternatively, the illumination area IAM and the exposure area IA are one area whose length in the Y-axis direction is half the length in the Y-axis direction of the pattern surface of the mask M and one partitioned area on the substrate P, respectively. Is also good. In this case, as in the above embodiment, it is necessary to perform the scanning exposure operation twice for one divided area.

Further, when the projection system main body 42 is reciprocated to perform the stitching exposure to form one mask pattern in the partitioned region as in the above-described embodiment, the forward and backward alignments having different detection fields of view are performed. The microscope may be arranged before and after the projection system main body 42 in the scanning direction (X direction). In this case, for example, the marks Mk at the four corners of the partitioned area are detected by an alignment microscope for the forward path (for the first exposure operation), and the marks near the joint are detected by the alignment microscope for the backward path (for the second exposure operation). Mk may be detected. Here, the spliced portion means a spliced portion of the area exposed by the forward scanning exposure (area where the pattern is transferred) and the area exposed by the backward scanning exposure (area where the pattern is transferred). To do. As the mark Mk near the joint, the mark Mk may be formed on the substrate in advance, or an exposed pattern may be used as the mark Mk.

In the above embodiment, the drive system 24 for driving the illumination system body 22 of the illumination system 20, the drive system 34 for driving the stage body 32 of the mask stage device 30, and the projection system body 42 of the projection optical system 40. A drive system 44 for driving the substrate, a drive system 54 for driving the stage body 52 of the substrate stage apparatus 50, and a drive system 66 for driving the alignment microscope 62 of the alignment system 60 (see FIG. 2 respectively), Although the case where each includes a linear motor has been described, the types of actuators for driving the illumination system main body 22, the stage main body 32, the projection system main body 42, the stage main body 52, and the alignment microscope 62 are not limited to this, and may be appropriately selected. It can be changed, and various actuators such as a feed screw (ball screw) device and a belt drive device can be appropriately used.

In the above embodiment, the measurement system 26 for measuring the position of the illumination system main body 22 of the illumination system 20, the measurement system 36 for measuring the position of the stage main body 32 of the mask stage device 30, and the projection optical system 40. Measurement system 46 for measuring the position of the projection system main body 42, measurement system 56 for measuring the position of the stage main body 52 of the substrate stage device 50, and measurement for measuring the position of the alignment microscope 62 of the alignment system 60. The system 68 (refer to FIG. 2) includes the linear encoders. However, in order to measure the positions of the illumination system body 22, the stage body 32, the projection system body 42, the stage body 52, and the alignment microscope 62. The type of the measurement system is not limited to this, and can be changed as appropriate. For example, various measurement systems such as an optical interferometer or a measurement system using a linear encoder and an optical interferometer together can be appropriately used. ..

In the above embodiment, the wavelength of the light source used in the illumination system 20 and the illumination light IL emitted from the light source is not particularly limited, and may be, for example, ArF excimer laser light (wavelength 193 nm) or KrF excimer laser light (wavelength). It may be ultraviolet light such as 248 nm) or vacuum ultraviolet light such as F ₂ laser light (wavelength 157 nm).

Further, in the above-described embodiment, the illumination system main body 22 including the light source is driven in the scanning direction, but the present invention is not limited to this, and the light source is fixed like the exposure apparatus disclosed in JP 2000-12422 A, for example. Alternatively, only the illumination light IL may be scanned in the scanning direction.

Further, although the illumination area IAM and the exposure area IA are formed in a band shape extending in the Y-axis direction in the above-described embodiment, the present invention is not limited to this, and as disclosed in, for example, US Pat. No. 5,729,331. Alternatively, a plurality of areas arranged in a staggered pattern may be combined.

Further, in each of the above-described embodiments, the mask M and the substrate P are arranged so as to be orthogonal to the horizontal plane (so-called vertical arrangement), but the present invention is not limited to this, and the mask M and the substrate P are parallel to the horizontal plane. It may be arranged. In this case, the optical axis of the illumination light IL is substantially parallel to the gravity direction.

In addition, during the scanning exposure operation, the fine positioning in the XY plane of the substrate P was performed according to the result of the alignment measurement. Together with this, the surface of the substrate P before the scanning exposure operation (or in parallel with the scanning exposure operation). The position information may be obtained and surface position control of the substrate P (so-called autofocus control) may be performed during the scanning exposure operation.

Further, the application of the exposure apparatus is not limited to an exposure apparatus for a liquid crystal that transfers a liquid crystal display element pattern to a rectangular glass plate, and for example, an exposure apparatus for manufacturing an organic EL (Electro-Luminescence) panel, a semiconductor It can be widely applied to an exposure apparatus for manufacturing, a thin film magnetic head, an exposure apparatus for manufacturing a micromachine, a DNA chip and the like. Further, not only microdevices such as semiconductor elements, but also glass substrates or silicon wafers for manufacturing masks or reticles used in light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc. It can also be applied to an exposure device that transfers a circuit pattern onto a substrate.

The object to be exposed is not limited to the glass plate, but may be another object such as a wafer, a ceramic substrate, a film member, or a mask blank. Further, when the exposure target is a substrate for a flat panel display, the thickness of the substrate is not particularly limited, and includes, for example, a film-shaped (sheet-shaped member having flexibility). The exposure apparatus of this embodiment is particularly effective when a substrate having a side length or a diagonal length of 500 mm or more is an exposure target. Further, when the substrate to be exposed has a flexible sheet shape, the sheet may be formed in a roll shape. In this case, it is possible to easily change (step move) the division area of the exposure target with respect to the illumination area (illumination light) by rotating (rolling up) the roll regardless of the step operation of the stage device. ..

For electronic devices such as liquid crystal display elements (or semiconductor elements), the step of designing the function/performance of the device, the step of producing a mask (or reticle) based on this design step, the step of producing a glass substrate (or wafer) The exposure apparatus of each of the embodiments described above, and a lithography step of transferring a mask (reticle) pattern onto a glass substrate by the exposure method, a development step of developing the exposed glass substrate, and a portion other than the portion where the resist remains It is manufactured through an etching step of removing an exposed member of a portion by etching, a resist removing step of removing a resist which is no longer needed after etching, a device assembling step, an inspection step and the like. In this case, in the lithography step, the above-mentioned exposure method is executed by using the exposure apparatus of the above-described embodiment, and the device pattern is formed on the glass substrate, so that a highly integrated device can be manufactured with high productivity. ..

As described above, the exposure apparatus of the present invention is suitable for scanning and exposing an object. Moreover, the manufacturing method of the flat panel display of the present invention is suitable for the production of the flat panel display. Moreover, the device manufacturing method of the present invention is suitable for the production of microdevices.

10... Liquid crystal exposure device, 20... Illumination system, 30... Mask stage device, 40... Projection optical system, 50... Substrate stage device, 60... Alignment system, 70... Calibration sensor, M... Mask, P... Substrate.

Claims (36)

Light from the illumination system is emitted to the object through the projection optical system, the illumination system and the projection optical system are relatively moved with respect to the object in the scanning direction, and scanning exposure is performed on the object to form a predetermined pattern. An exposure apparatus which is formed on the object,
A first drive system for moving the illumination system in the scanning direction;
A second drive system for moving the projection optical system in the scanning direction;
An acquisition unit that acquires information about a position for moving the illumination system and the projection optical system in the scanning direction by the first and second drive systems ;
In the scanning exposure, a control system that controls the first and second drive systems so that a change in the positional relationship between the illumination system and the projection optical system falls within a predetermined range based on the information ,
The acquisition unit includes a light receiving unit that receives light that passes through the projection optical system,
The first drive system moves the illumination system so that an incident position of light from the illumination system with respect to the projection optical system moves from a first position to a second position,
The acquisition unit, the incident position of the light get the information based on the light receiving result of the light receiving portion when said first and second position exposing device. The predetermined range is a range in which a change in imaging performance of the projection optical system is within an allowable range based on a change in a region where light from the illumination system passes through the projection optical system. Exposure equipment. The exposure apparatus according to claim 2, wherein the predetermined range is a range in which a change in an image of a predetermined pattern formed on the object due to a change in the imaging performance falls within the allowable range. The light receiving unit has a reference mark,
A mark detection system for detecting the reference mark,
A third drive system for moving the mark detection system in the scanning direction to position it at the detection position of the reference mark,
Wherein the control system controls the second and third drive system, according to claim 1 via the reference mark obtaining a relative first position relation between the mark detecting system and the projection optical system Exposure equipment. The mark detection system has a first mark detection system for detecting a mark provided on the object and a second mark detection system for detecting a mark provided on a mask having the predetermined pattern,
The control system is based on a detection result of the one mark detection system and a detection result of the other mark detection system when one of the first and second mark detection systems detects the reference mark. The exposure apparatus according to claim 4 , wherein the relative second positional relationship between the first and second mark detection systems is obtained. The exposure apparatus according to claim 5 , wherein at least a part of the elements forming the first mark detection system and the elements forming the second mark detection system are common. The control system includes: the reference mark, the exposure apparatus according to claim 5 or 6 determining the relative third positional relationship between the projected image of a predetermined mark projected on the light receiving portion by the projection optical system. The control system obtains a relative fourth positional relationship between the projection optical system and the reference mark,
The exposure apparatus according to claim 7 , wherein the first positional relationship is obtained based on the second, third, and fourth positional relationships. The other mark detecting system, an exposure apparatus according to any one of claims 5-8 for detecting a mark provided on the mask when the one mark detecting system detects the reference mark. The exposure apparatus according to claim 9 , wherein the control system obtains a third positional relationship by the projection image obtained by projecting a mark provided on the mask by the projection optical system and the reference mark. The reference mark The exposure apparatus according to any one of claims 4-10 provided on a moving path of the projection optical system. An exposure apparatus for forming a pattern on the object by a scanning exposure operation of scanning an energy beam in the scanning direction on the object,
A first mark detection system that is movable in the scanning direction and that can detect a pattern-side mark of a pattern holder having the pattern;
A first drive system for moving the first mark detection system in the scanning direction;
A second mark detection system that is movable in the scanning direction and that can detect an object-side mark provided on the object;
A second drive system for moving the second mark detection system in the scanning direction;
A controller for performing relative alignment between the pattern holder and the object based on the outputs of the first and second mark detection systems,
An exposure apparatus in which the elements forming the first drive system and the elements forming the second drive system are at least partially common. The exposure apparatus according to claim 12 , wherein the first and second mark detection systems can simultaneously detect the pattern-side mark and the object-side mark. The optical axis of the projection optical system is parallel to the horizontal plane,
Wherein the object, an exposure apparatus according to any one of claim 1 to 13, light from the illumination system is arranged in a state where the exposure plane is perpendicular to the horizontal plane to be irradiated. Wherein the object, an exposure apparatus according to any one of claim 1 to 14 which is a substrate used in a flat panel display device. The exposure apparatus according to claim 15 , wherein the substrate has a length of at least one side or a diagonal length of 500 mm or more. And exposing the object using the exposure apparatus according to any one of claims 1-16,
Developing the exposed object, a method of manufacturing a flat panel display. And exposing the object using the exposure apparatus according to any one of claims 1-16,
Developing the exposed object. Light from the illumination system is emitted to the object through the projection optical system, the illumination system and the projection optical system are relatively moved with respect to the object in the scanning direction, and scanning exposure is performed on the object to form a predetermined pattern. An exposure method for forming on the object,
Moving the illumination system in the scanning direction using a first drive system;
Moving the projection optical system in the scanning direction using a second drive system;
Acquiring information about a position for moving the illumination system and the projection optical system in the scanning direction by the first and second drive systems , using an acquisition unit;
In the scanning exposure, see contains and a possible change in the positional relationship between the illumination system and the projection optical system for controlling the first and second driving systems so as to fall within a predetermined range based on said information,
Moving the illumination system moves the illumination system such that the incident position of light from the illumination system on the projection optical system moves from the first position to the second position,
Further comprising receiving light passing through the projection optical system using a light receiving section,
In the acquisition, the exposure method is, in which the acquisition unit is used to acquire the information based on a light reception result of the light reception unit when the incident position of the light is at the first and second positions. Wherein the predetermined range, according to claim 19 light based on the change in the region passing through the said projection optical system, a change in imaging performance of the projection optical system is in the range that falls within the allowable range from the illumination system Exposure method. 21. The exposure method according to claim 20 , wherein the predetermined range is a range in which a change in an image of a predetermined pattern formed on the object based on a change in the imaging performance falls within the allowable range. The light receiving unit has a reference mark,
Detecting the reference mark using a mark detection system,
And moving to the scanning direction using a third drive system for positioning the mark detection system in the detection position of the reference mark,
Further including,
Is that wherein the controlling controls the second and third driving system, in claim 19 for determining the relative first position relation between the mark detecting system and the projection optical system via the reference mark The exposure method described. The mark detection system has a first mark detection system for detecting a mark provided on the object and a second mark detection system for detecting a mark provided on a mask having the predetermined pattern,
By performing the control, the detection result of the one mark detection system and the detection result of the other mark detection system when one of the first and second mark detection systems detects the reference mark is set. 23. The exposure method according to claim 22 , wherein a relative second positional relationship between the first and second mark detection systems is obtained based on the above. 24. The exposure method according to claim 23 , wherein an element forming the first mark detection system and an element forming the second mark detection system are at least partially common. The exposure method according to claim 23 or 24 , wherein the control determines a relative third positional relationship between the reference mark and a projection image of a predetermined mark projected on the light receiving unit by the projection optical system. .. In the control, a relative fourth positional relationship between the projection optical system and the reference mark is obtained, and the first positional relationship is obtained based on the second, third, and fourth positional relationships. The exposure method according to claim 25 . The other mark detecting system, an exposure method according to any one of claims 23-26 for detecting a mark provided on the mask when the one mark detecting system detects the reference mark. 28. The exposure method according to claim 27 , wherein in the controlling, the mark provided on the mask obtains a third positional relationship by the projection image projected by the projection optical system and the reference mark. The reference mark The exposure method according to any one of claims 22-28 provided on the moving path of the projection optical system. A scanning exposure operation of scanning an energy beam in the scanning direction on an object, which is an exposure method for forming a pattern on the object,
Detecting a pattern-side mark of a pattern holder having the pattern using a first mark detection system movably provided in the scanning direction;
Moving the first mark detection system in the scanning direction using a first drive system;
Detecting an object-side mark provided on the object using a second mark detection system provided so as to be movable in the scanning direction;
Moving the second mark detection system in the scanning direction using a second drive system;
Performing relative alignment between the pattern holder and the object based on the outputs of the first and second mark detection systems,
An exposure method in which an element forming the first drive system and an element forming the second drive system are at least partially common. The exposure method according to claim 30 , wherein the first and second mark detection systems can simultaneously detect the pattern-side mark and the object-side mark. The optical axis of the projection optical system is parallel to the horizontal plane,
Wherein the object exposure method according to any one of claims 19 to 31, light from the illumination system is arranged in a state where the exposure plane is perpendicular to the horizontal plane to be irradiated. Wherein the object exposure method according to any one of claims 19 to 32 which is a substrate used in a flat panel display device. The exposure method according to claim 33 , wherein the substrate has a length of at least one side or a diagonal length of 500 mm or more. Exposing the object using the exposure method according to any one of claims 19 to 34 ;
Developing the exposed object, a method of manufacturing a flat panel display. Exposing the object using the exposure method according to any one of claims 19 to 34 ;
Developing the exposed object.

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