TW201040673A - Exposure device, exposure method and device production method - Google Patents

Abstract

An exposure device that can suppress the reduction of a throughput is provided. The exposure device includes a substrate stage, which keeps the substrate with respect to the irradiation area and moves to one side with respect to the scanning direction in an acceleration state between a first position and a second position along the scanning direction, moves in a stable state near the second position, and moves in a constant speed state between the second position and a third position; and an alignment system having a detection area, which is on the other side of the scanning direction with respect to the irradiation area and is located at a position separated for at least the distance between the first position and the second position. An alignment mark can be arranged on the detection area on the substrate adjacent to the first exposure object area that is first exposed among several exposure object areas, and the position of the first exposure object area is derived by the alignment system.

Description

201040673 VI. Description of the Invention: [Technical Field] The present invention relates to an exposure apparatus, an exposure method, and a device manufacturing method. [Prior Art] For example, in the manufacturing steps of an electronic component such as a flat panel display (f|atpanel display), an exposure device that exposes a substrate with an exposure beam is used. As disclosed in the following patent documents, the exposure apparatus includes an alignment system that can derive the position of the substrate, and performs alignment processing using the alignment system to expose the substrate. [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-347184 discloses that in the exposure apparatus, when the time required for the alignment process is long, the throughput is lowered, and The possibility that the productivity of the component will decrease. D. SUMMARY OF THE INVENTION An object of the present invention is to provide an exposure apparatus and an exposure method capable of suppressing a decrease in the amount of processing. Moreover, it is an object of the technical scope of the present invention to provide a method of manufacturing a component which can suppress a decrease in productivity. According to a first aspect of the present invention, an exposure apparatus is provided, in which a plurality of the above-mentioned substrates are exposed by an exposure beam Exposure sequentially exposes the image area of 201040673. The exposure apparatus includes a substrate platform that can be in a stable state in the vicinity of the second position in the acceleration state 2 between the first position and the second position, and in the second position. The second crucible is maintained at a constant speed state with respect to the illumination region and moves to the side with respect to the scanning direction; and the alignment is performed with respect to the scanning region with respect to the scanning region Π;: a distance between the first position and the second position, an alignment mark (aiig_nt light object area) on the substrate adjacent to the first j-pair field in the exposure target area; and The alignment system derives the above-mentioned first exposure method 2 technical solution 'providing the shape manufacturer to use the exposure I set of the first scheme, the coating has a sense of m = (four) line exposure; exposure exposure by exposure of the above substrate Agent Developing the substrate to form an exposure pattern layer; and, wherein the substrate is processed by the exposure pattern layer. According to the third aspect of the invention, an exposure method is provided, wherein the substrate is opposite to the exposure beam Illuminating the illuminating region and sequentially exposing the plurality of exposures of the substrate along the scanning side, and the exposing method comprises: performing the first exposure at the second exposure 1 The irradiation area is irradiated with the exposure of the plurality of exposure target areas in the exposure area, and an alignment process is performed, which is an alignment mark on the substrate on which the ith exposure process is performed. Detected in the detection area of the alignment system 201040673 Ο

a process of deriving a position of the exposure target region; and performing a second exposure process of the second exposure process: the first exposure process is performed on the illumination region, and the first exposure process and the alignment are performed And performing a process of sequentially exposing a plurality of the light-to-secret regions on the substrate, and performing a first exposure target region in which the first exposure portion is first de-extracted at the first exposure target region among the plurality of exposure target regions The moving direction of the scanning direction at the time of exposure and the first exposure of the second exposure processing in the second exposure processing are compiled in the above-mentioned sweeping (four) scale. According to the fourth aspect of the present invention, there is provided a component manufacturing device, comprising: exposing the substrate of the coating agent by using an exposure method of the third aspect; and exposing the substrate by the exposure The exposed sensitizer is developed to form an exposure pattern layer, and the substrate is processed through the exposure pattern layer. [Effects of the Invention] According to the aspect of the invention, it is possible to suppress a decrease in the productivity of the lower suppression element of the treatment amount. =: MODE FOR CARRYING OUT THE INVENTION [Embodiment] The following is a description of an embodiment of the present invention. However, the present invention is not limited to +3CV7 T6. In the following description, 疋XYZ is set. For the coordinates, refer to the χγζ orthogonal coordinate system to explain the positional relationship of each part 7 201040673 points. The predetermined direction in the horizontal plane is the χ-axis direction, and the direction orthogonal to the X-axis direction in the horizontal plane is the γ-axis direction, and the direction orthogonal to the X-axis direction and the γ-axis direction (that is, the sag direction) ) Set to the x-axis direction. Moreover, the direction around the χ axis, the γ axis, and the direction are set to be traits, traits, and sighs. Bayer) <First Embodiment> The first embodiment will be described. Fig. 1 is a schematic configuration diagram showing an example of an exposure apparatus EX according to the i-th embodiment, and Fig. 2 is a perspective view. In FIG. 1 and FIG. 2, the exposure farm EX includes a mask platform that can move while maintaining a mask (k), and a substrate platform 2 that can move while holding the substrate p, and moves the mask platform 1 a driving system 3; a driving system 4 that moves the substrate platform 2; an illumination that illuminates the mask M with the exposure light beam EL; an image of the pattern of the mask M illuminated by the exposure light beam EL is applied to the substrate The projection system p of p; and the control device 5 for controlling the overall operation of the exposure device. The mask Μ includes a reticle formed with an element pattern projected onto the substrate ρ. The substrate Ρ includes, for example, a substrate such as a glass plate, and a photosensitive film (coated sensitizer) formed on the substrate. In the present embodiment, the substrate p includes a large glass plate called mother glass, and the size of one side of the substrate P is, for example, 5 〇〇 mm or more. In the present embodiment, as the substrate of the substrate P, a rectangular glass plate having a side of about 3 mm was used.

Further, the exposure apparatus EX of the present embodiment includes an interferometer system 6 that measures the positions of the mask stage 1 and the substrate stage 2, and detects the position of the surface (lower surface, pattern forming surface) of the mask M 201040673. The second detecting system 8 for detecting the position of the surface (exposure surface, photosensitive surface) of the substrate P; and the alignment system 9 for detecting the alignment mark on the substrate P. Further, the exposure device EX includes a main body (b). The main body 13 has a base piate arranged on the support surface (for example, the floor) FL in the clean room (the floor) by the anti-vibration table BL; the base piate is disposed on the bottom plate 10 The first column 11 and the second column 12 disposed on the first column 11. In the present embodiment, the main body 13 supports each of the system PS, the mask platform i, and the substrate platform 2. In the present embodiment, the projection system PS is supported by the first cylinder u via the platen 14. The cover f platform 1 is movably supported with respect to the second cylinder 12. The substrate platform 2 is movably supported relative to the bottom plate 1 . In the present embodiment, the projection system PS has a plurality of projection optical systems. The illumination system IS has a plurality of illumination modules corresponding to a plurality of projection optical systems. Further, in the exposure apparatus of the present embodiment, the mask Μ and the substrate 同步 are moved in synchronization in a predetermined scanning direction, and the image of the mask IV is projected onto the substrate ρ. That is, the exposure cracking of the present embodiment is a so-called multi-lens scanning type scanning apparatus. In the present embodiment, the projection system has seven projection optical systems PL1 to PL7, and the illumination system. The LS has seven illumination modules IL1 to IL7. • Furthermore, the number of projection optical systems and illumination modules is not limited to seven. For example, the projection system PS may have one projection optical system, and the illumination system 201040673 IS may also have 11 illumination modules. The illumination system IS can illuminate the exposure beam EL for a prescribed illumination area. The lighting area is from the lighting module IL1~江? The exposed area of the emitted exposure beam EL can be illuminated. In the present embodiment, the illumination system is used to illuminate each of the seven different illumination areas by the exposure light beam EL. The illumination system IS illuminates the portion of the mask that is disposed in the illumination region by using the exposure beam el of the uniform illumination distribution. In the present embodiment, as the exposure light beam emitted from the illumination system IS, an open line (g line, h line, and 丨 line) emitted from a mercury lamp 17 is used. The mask platform 1 is movable relative to the illumination area while the mask Μ is held. The mask stage 1 holds the mask 以 in such a manner that the lower surface (pattern forming surface) of the mask 大致 is substantially parallel to the ΧΥ plane. The drive system 3, for example, includes a linear motor, and the mask platform 可 can be moved on the guide surface 12G of the second cylinder 12. In the present embodiment, the mask platform 1 can be moved in the three directions of the X-axis, the γ-axis, and the θ-direction on the guide surface 12g while the mask M is held by the operation of the drive system 3. Come to move. The projection system PS can illuminate the exposure beam with respect to a predetermined projection area. The EL jersey area is an irradiation area that can be irradiated by the exposure light beam EL emitted from each of the projection optical systems PL1 to PL7. In the present embodiment, the projection system PS projects a pattern to each of the seven different projection regions pR1 to pR7. The image of the pattern of the mask Μ is projected onto the image of the mask Μ by the projection optical system pS to a predetermined projection ratio. The substrate Ρ is disposed in a portion of the projection regions pRi to pR7. 201040673 The substrate platform 2 can be moved relative to the projections :/ PR1 to PR7 while the wire ρ is held. The substrate stage 2 holds the substrate ρ with a square wire whose surface (exposed surface) of the substrate ρ is substantially parallel to the pupil plane. The drive system 4 includes, for example, a linear motor, and is shielded from the guide surface of the bottom plate 1〇. In the present embodiment, the substrate stage 2 can be moved in the direction of the X-axis, the γ-axis, the z-axis, and the mez direction on the guide surface = by holding the substrate P while driving the substrate P. At the time of exposure of the substrate P, the control device 5 controls the mask platform! And the platform 2' moves the mask M and the substrate 规定 along a predetermined scanning direction in the pupil plane of the light ί of the exposure light beam EL. In the second embodiment, the scanning direction (synchronous moving direction) of the substrate 设为 is set to the x-axis direction. The scanning direction (synchronous moving direction) of the mask 亦 is also set to the X-axis f direction. On the one hand, the control device 5 moves the substrate Ρ in the x-axis direction with respect to the rest area PR1 to PR? of the projection system PS and synchronizes with the movement of the substrate P in the X-axis direction, so that the mask Μ is relative to the illumination system n moves along the x-axis direction, and on the other hand, the soil plate illuminates the exposure beam EL via the projection system. Thereby, the image of the pattern of the mask is projected onto the substrate, and the substrate ρ is exposed under the exposure beam el. Fig. 3 is a view showing an example of the substrate stage 2 disposed on the projection system ps, the i-th detection system second detecting system 8, the alignment system 9, and the projection areas PR1 to PR7 of the embodiment. As shown in FIGS. 2 and 3, a soil member 43 is disposed on the upper surface of the substrate stage 2. The upper surface of the reference member 43 is arranged to be substantially in the same plane as the surface of the substrate P held by the base plate 201040673. Further, a transmissive portion 45 through which the exposure light beam EL can be transmitted is disposed on the upper surface 44 of the reference member 43. Below the reference member 43, a light receiving device 46 that can receive light that has passed through the transmitting portion 45 is disposed. The light-receiving device 46 has a lens Uens that is incident on the light passing through the transmissive portion 45, and a light sensor (sensor) that receives light passing through the lens system 47. In the present embodiment, the photo sensor 48 includes a photographic element (charge coupled device (CCD)). The photo sensor 48 outputs a signal corresponding to the received light to the control device 5. In the present embodiment, the transmitting portion 45 functions as a reference mark. Further, a mark placed at a predetermined position with respect to the transmissive portion 45 may be provided on the upper surface 44 of the reference member 43, and may be referred to as a fresh mark. Next, the interferometer system 6, the first detection system 7, the second detection system 8, and the alignment system 9 will be described. In Figs. 1 and 2, an interferometer includes a laser unit 6A for measuring the position of the mask stage 1, and a calculation unit 6B for the position of the substrate stage 2. The laser interferometer unit 6A can measure the mask platform 1 using the measuring mirror on the platform 1 to measure the mating platform. The dream laser interferometer unit 6B can measure the substrate platform using the second disposed on the substrate platform 2. 2 location. In the present embodiment, it is dry. = System 6 can use the laser interferometer single ^ 6A, 6B, to cover the X-axis, Y-axis and ΘΧ direction of each of the 遮 平 i 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 2010 The position of the lower surface (pattern forming surface) of the ^ in the two-axis direction is detected. The first detection system 7 is a so-called oblique entrance level detection system. Second, the detection system 8 determines the position of the surface (exposure surface) of the substrate P in the Z-axis direction. The second detecting system 8 is a so-called oblique incident multi-point focus leveling detecting system. The alignment system 9 detects the alignment marks provided on the substrate P. In the present embodiment, the alignment system 9 has a first alignment system 91 disposed on the _\ side with respect to the projection system ps in the X-axis direction (scanning direction) and a second alignment disposed on the +X side. System 92. • The first alignment system 9 and the second alignment system 92 are so-called off-axis (〇 ff • axis) alignment systems. As shown in FIG. 3, the first alignment system 91 has a plurality of detectors 91A to 91F disposed opposite to the surface of the substrate P held by the substrate stage 2, and a plurality of detection areas SA1 to SA6. The detectors 91A to 91F correspond to each other and are arranged along the γ-axis direction. The second alignment system 92 has a plurality of detectors 92A and 92B disposed opposite to the surface of the substrate P held by the substrate stage 2A, and a plurality of detection areas SB1 and SB2 corresponding to the detectors 92A and 92B. And arranged along the γ axis direction. Each of the detectors 91A to 91F, 92A, and 92B has a projection unit that emits detection light to the detection areas SA1 to SA6, SB1, and SB2, and a light receiving unit that can acquire pairs disposed in the detection areas SA1 to SA6, SB1, and SB2. * A quasi-marked optical image. Each of the plurality of detectors 91A to 91F, 92A, and 92B can detect an alignment mark on the substrate 13 201040673 p disposed in the detection areas SA1 to SA6, SB1, and SB2. 4 is a schematic diagram showing an example of the positional relationship between the projection areas PR1 to PR7, the detection areas SA1 to SAf, the SB SB2, and the substrate P, and shows the positional relationship in the plane including the surface of the substrate P. As shown in Fig. 4, in the present embodiment, the surface of the substrate P has a plurality of exposure regions (exposure target regions) ρΑ1 to ρ4 projected by the image of the mask pattern. In the present embodiment, the surface of the substrate has four exposure regions ΡΑ1 to Ρ=°, and the exposure regions are arranged at substantially equal intervals along the γ-axis direction, and the exposure regions ΡΑ3 and ΡΑ4 are along the γ-axis direction. They are arranged at substantially equal intervals. The exposure area 配 is placed on the -Υ side with respect to the exposure area ρ Α 2 . The exposure area ΡΑ3 is disposed on the +Υ side with respect to the exposure area ρΑ4. The exposure areas ΡΑ1 and ΡΑ2 are arranged on the +Χ side with respect to the exposure areas ΡΑ3 and ΡΑ4. In the present embodiment, each of the projection regions PR1 to PR7 has a trapezoidal shape in the pupil plane. In the present embodiment, the projection areas pm, pR3, PR5, and PR7 of the projection optical systems pL1, PL3, PL5, and PL7 are arranged at substantially equal intervals in the γ-axis direction, and the projection areas PR2 of the projection optical systems pL2, pL4, and pL6 are disposed. Further, PR4 and PR6 are arranged at substantially equal intervals along the Y-axis direction. The projection areas PR1, PR3, PR5, and PR7 are arranged on the -X side with respect to the projection areas PR2, PR4, and PR6. Further, regarding the γ-axis direction, the projection regions PR2, PR4, and PR6 are disposed between the projection regions pri, pR3, PR5, and PR7. In the present embodiment, among the plurality of projection regions PR1 to PR7, the distance between the two projection regions PR1 that are outside the Y-axis direction and the projection region pR7 is smaller than the plurality of exposure regions PA1 to PA4, and the γ-axis The direction of the outer side of the two exposure areas ΡΑ1 (ΡΑ4) is the interval between the edge of the Υ1 side and the edge of the exposure area PA2 (PA3) on the +Y side. Further, the interval between the two projection regions PR1 and the projection region PR7 which are outside the Y-axis direction is substantially the same as or slightly larger than the interval between the edge on the -Y side of the exposure region PA1 and the edge on the +γ side. Further, in the present embodiment, the sizes and shapes of the exposure regions ΡΑ1 to ΡΑ4 are substantially the same. In the present embodiment, the plurality of detection areas SA1 to SAWY of the detectors 91A to 91F of the first alignment system 91 are arranged at predetermined intervals. The detector 92A of the second alignment system 92 and the plurality of measurement regions sm and SB2 of the can be arranged are spaced apart at a predetermined interval in the Y-axis direction. In the present invention, the first alignment system 91 has six detection areas SA1 to SA6. The second alignment system 92 has two detection areas SB1 and SB2. In the embodiment, the number of detection areas SB1 and SB2^ of the second alignment system 92 is smaller than the number of detection areas SA1 to SA6 of the first alignment system 91, and the detection areas SA1 to SA6 are relative to the projection. The area is arranged on the -X side with respect to the X-axis direction (scanning direction). ==: SB2 is placed on the + side with respect to the projection area pRi to fat, with respect to the 轴 axis direction (the direction of the drawing).

Among the plurality of detection areas SA1 to SA6, the two detection areas SA1 of the γ station side & κ are detected with "°", and the J light areas PA1 to PA4 are separated, and the plurality of exposure areas are called PA4. The exposure of the two touches is approximately equal to the interval between the edges of the 15 201040673 +Y side of the exposure area ΡΑ 2 (ΡΑ3). Among the plurality of detection regions s B 丨 and s B 2 , the interval ′ between the two detection regions SB1 and the detection region SB2 that are outside the Y-axis direction and the plurality of exposure regions pa 1 to pA4 are related to the γ-axis direction. The distance between the edge on the one side of the outer two exposure regions PA1 (PA4) and the edge on the +Y side of the exposure region PA2 (PA3) is substantially equal. That is, in the present embodiment, the distance between the detection area SA1 and the detection area SA6 at both ends of the first alignment system 91 in the γ-axis direction, and the detection area SB1 and the detection area at both ends of the second alignment system 92 are detected. The distance of SB2 is approximately the same. Further, in the present embodiment, the positions of the detection areas SA1 and SA6 at both ends of the first alignment system 91 in the Y-axis direction are substantially the same as the positions of the detection areas sm and SB2 at both ends of the second alignment system 92. . The first alignment system 9 is a second plurality of alignment marks ml to (4) riding detection provided on the county board p. In the present embodiment, six alignment bars are arranged on the substrate P so as to be spaced apart in the Y-axis direction, and the groups of the alignment marks ml to m6 are arranged on the edge. Four places separated by the X-axis direction. The alignment marks gulls m2 and m3 are provided adjacent to each end portion of the exposure regions PA1 and PA4, and the alignment bars m4, m5, and m6 are provided adjacent to each end portion of the exposure regions PA2 and PA3. In the following description, among the four groups of the alignment marks ml to m6 which are arranged at four positions spaced along the z-axis direction, the alignment marks of the edges of the _乂 side of the nearest substrate ρ are ml~m6. The group is called the i-th group CH' is next to the first! The group of the alignment marks ml to m6 of the group G1 and the near-substrate ρ^χ_ edge is appropriately referred to as the second group G2, and is close to the _χ side of the substrate p next to the group G2 of the 16th 201040673 2 Alignment mark of the edge ml~

The group of m6 is appropriately referred to as the third group G3, and the group of the alignment marks ml to m6 closest to the edge of the +X side of the substrate p is appropriately referred to as the fourth group 'G4. In the present embodiment, the detection areas SA1 to SA6 of the second alignment system 91 are disposed on the substrate p in correspondence with the six alignment marks mi to m6 arranged along the γ-axis direction (detector 91A). ~91F). The detectors 91A to 91F are provided such that the alignment marks mi to m6 are simultaneously disposed in the detection areas SA1 to SA6. The first alignment system 91 can simultaneously detect the six alignment marks ml to m6 using the detectors 91A to 91F'. Further, on the substrate P, the detection areas SBb (SB2 (detectors 92A, 92B) of the second alignment system 92 are arranged corresponding to the two alignment marks ml, m6 arranged spaced apart in the γ-axis direction. The detectors 92A and 92B are provided such that the alignment marks ml and m6 are simultaneously disposed in the detection areas sbi and SB2. The second alignment system 92 can simultaneously detect the two (both ends) alignment marks ml, m6 of the plurality of alignment marks -m6 with respect to the γ-axis direction and using the detectors 92A, 92B'. Next, an example of the operation of the exposure of the substrate p of the present embodiment at the time of exposure will be described. In the present embodiment, at least the portion 'minute' of the operation of the exposure device 是 is executed based on predetermined exposure-related control information (exposure control information) ’. The exposure control information includes a control command group that regulates the operation of the exposure device ,, and is called an exposure processing program (recipe). In the following description, the exposure-related control information is appropriately referred to as an exposure processing procedure 17 201040673. The exposure processing program is previously memorized in the control device 5. The operating condition of the exposure device 至少 at least the exposure date of the substrate P (when the exposure light beam EL is irradiated to the mask Μ and the substrate p) is determined in advance by the (4) ambiguity program. The control device 5 controls the operation of the exposure device 根据 based on the exposure processing program.

The exposure processing program includes a mask stage 曝光 at the time of exposure of the substrate ρ and a moving condition of the substrate platform 2. When the substrate is exposed, the control device 5 moves the mask stage and the substrate stage 2 by the exposure processing program. The exposure apparatus EX of the present embodiment is a multi-lens type scanning exposure apparatus. When the exposure areas PA1 to PA4 of the substrate are exposed, the mask M and the substrate p are moved in the X-axis direction in the X and plane. The control device 5 synchronizes the mask Μ and the substrate ρ in the X-axis direction according to the exposure processing roll type, and irradiates the mask Μ with the exposure light beam EL on the one hand, and exposes the surface of the base phase 经由 through the mask μ. The area ΡΑ1~;ΡΑ4 respectively illuminate the exposure beam EL,u

The exposure areas ΡΑ1 to ΡΑ4 are exposed. At the time of exposure of the substrate ρ, the control device 5 moves the substrate ρ in the X-axis direction (scanning direction) with respect to the projection regions PR1 to PR7 in accordance with the exposure processing program, and on the other hand, a plurality of exposure regions Ρ1 to the substrate Ρ1. ΡΑ4 performs sequential exposure. In the present embodiment, the exposure processing of the plurality of exposure regions ΡΑ1 to ΡΑ4 provided on the substrate 是 is such that the exposure regions ρΑ1 to ρ4 are along the surface of the substrate ρ with respect to the projection regions PR1 to PR7 (χγ plane). ) and move along the X-axis direction, on the one hand. For example, when exposure is performed on the exposure region ΡΑ1 of the substrate ,, the control 18 201040673 causes the exposure region PR1 of the substrate p to move in the X-axis direction with respect to the projection regions PR1 to PR7, and with the substrate? Simultaneously with the movement in the X-axis direction, the mask]V [moves in the direction of the x-axis relative to the illumination region], on the one hand, the illumination region is illuminated by the exposure beam EL, so that the exposure beam EL from the mask pupil is transmitted via the projection system ps The illumination is applied to the projection areas PR1 to PR7. Thereby, the exposure region pA1 of the substrate p is exposed to the exposure light beam EL irradiated to the projection regions PR1 to PR7, and the image of the mask M of the mask M is projected onto the exposure region pA1 of the substrate P. Next, an example of a method of exposing the substrate ρ using the exposure apparatus 上述 having the above configuration is described with reference to the flowchart of FIG. 5 and FIG. 6 (F) to FIG. 6 (F) and FIG. 7 (Α). The schematic diagrams of (F) of FIG. 7 and (A) of FIG. 8 to (C) of FIG. 8 are described on the one hand. As shown in Fig. 5, in the present embodiment, the step of performing the first exposure processing (step SP1) for irradiating the projection areas PR1 to PR7 with the exposure light beam EL is performed. On the one hand, sequentially exposing a plurality of exposure regions PA1 to PA4 on the substrate P, for forming a first pattern layer (first layer) on the substrate P; performing alignment processing a step (step SP2) of detecting alignment marks ml to m6 on the substrate P on which the first exposure process has been performed using the alignment system 9', and deriving the respective exposure processes formed by the first exposure process a position of the exposure areas PA1 to PA4 of the first pattern layer; and a step of performing a second exposure process (step SP3) for irradiating the projection areas PR1 to PR7 with the exposure beam EL On the other hand, the 201040673 exposure areas PA1 to PA4 on the substrate P on which the first exposure processing and the alignment processing are performed are sequentially exposed, and the second pattern is formed on the substrate p (on the first pattern layer). Layer (second layer (sec〇nd _ )) Management. Further, in the present embodiment, for the sake of simplicity, the case where the first 帛2 ® layer is formed on the substrate p will be described as an example. However, the third and fourth layers may be formed on the second pattern layer. Any number of drawings, layers, etc. of ..., the first, the case layer, and the like. For example, in the case of producing a thin film transistor π, a layer of about five layers (a pattern layer) such as a metal layer or a transparent electrode layer is formed on the substrate p. Further, in the following description, the exposure region pA1 is appropriately referred to as a first exposure region PA, and the exposure region PA2i is referred to as a second exposure region PA2'. The exposure region pA3 is appropriately referred to as a third exposure region pA3. The exposure area PA4 is appropriately referred to as a fourth exposure area PA4. First, the first exposure processing will be described with reference to FIGS. 6(A) to 6(F). The control device 5 carries the substrate p (loaded) onto the substrate stage 2. A photosensitive agent is applied onto the substrate P. A mask M having a pattern corresponding to the first pattern layer formed on the substrate p is carried (loaded) onto the mask stage 1 and held. After being held by the substrate stage 2, as shown in FIG. 6, the substrate P is placed at a predetermined position with respect to the projection areas PR1 to PR7 and the detection areas SA1 to SA6, SB1, and SB2. In the following description, the position of the substrate P shown in FIG. 6(A) is appropriately referred to as an initial position. After the mask is held on the mask platform, according to the exposure process 20

❹ 201040673 to perform a base line measurement process. Base = the position of the pattern image of the mask M formed by the system rs; the positional relationship (baseline amount) of the shadow SB Γ 9 S-: H f is measured. The method includes: using the interferometer system 6 to measure the substrate level by the feeding unit ps and the manufacturing unit 45, and using the alignment mark (not shown) disposed on the Γ Γ mask m, the location, the use of the interferometer The system 6 measures the position of the substrate platform 2, and uses the alignment system 9 to detect the transmission portion 45 (Mexico). Thereby, the positions of the projection areas PR1 to pR7 on the (4) coordinate, the in-plane coordinate system of the interferometer system 6 and the positions of the detection areas SA1 to SA6, SB1, and SB2 can be detected, and the control device 5 can be Export the baseline amount. In the first embodiment, in the first exposure processing, among the plurality of exposure regions A1 to PA4, exposure is first started from the first exposure region pA1, and then the second exposure region PA2 is exposed, and then the third exposure region pA3 is exposed. Finally, the fourth exposure area PA4 is exposed. The first exposure process is an exposure process for forming the first pattern layer, and alignment marks (ml to m6) are not provided on the substrate P. When the ith exposure processing is performed, the processing of detecting the position of the substrate p using the alignment system 9 is not performed. The control device 5 starts exposure of the plurality of exposure regions pA1 to pA4. First, the control device 5 controls the substrate stage 2 on which the substrate P is held in order to start exposure of the first exposure region PA1, and moves the substrate p from the initial position 21 201040673 to the exposure start position of the first exposure region PA1 to make the third The exposure area PA1 is disposed at the exposure start position. Furthermore, at least on the substrate? Before moving to the exposure start position of the first exposure area PA1, the second exposure area pA1 is disposed outside the projection areas PR1 to PR7. Fig. 6(B) shows a state in which the first exposure region PA1 is placed at the exposure start position. The exposure start position of the first exposure region PA1 includes a position at which the one end on the -X side of the i-th exposure region PA1 is disposed in at least a part of the projection regions pR2, pR4, and PR6. In the present embodiment, as shown in FIG. 6(B), the exposure start position of the first exposure region PA1 is one end of the second exposure region PA1 on the +X side of the projection regions pR2, pR4, and pR6. The position of one end. The control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL', and moves the third exposure area PA1 of the substrate p in the _χ direction with respect to the projection areas PR1 to PR7. Thereby, the first exposure area ΡΑ1 is exposed. The control device 5 moves the substrate Ρ in the -X direction until at least the first exposure region ΡΑ1 is placed at the exposure end position. The exposure end position of the first exposure region ρ 包括 includes a position at which the one end side of the first exposure region ΡΑ1 is placed in at least a part of the projection regions PR1, PR3, PR5, and PR7. In the present embodiment, the exposure end position of the first exposure region ΡΑ1 is one end of the first exposure region ΡΑ1 on the +Χ side, and is disposed at one end of the projection region pR, PR3, PR5, and PR7 on the -X side.

By the above operation, the exposure of the first exposure region PA1 is completed. In the irradiation of the first exposure region PA1 by the exposure light beam EL, the substrate stage 2 holding the substrate P 22 201040673 moves at a substantially constant speed (fixed speed) in the -X direction. Then, the control device 5 controls the substrate stage 2 holding the substrate P to start the exposure of the second exposure region PA2, and moves the substrate p from the exposure end position of the first exposure region PA1 to the exposure start position of the second exposure region pA2. The second exposure area PA2 is placed at the exposure start position. Further, at least the substrate P is moved to the exposure start position of the second exposure region pA2, and the second exposure region PA2 is disposed outside the projection regions pri to pRj. (C) shows a state in which the second exposure region PA2 is disposed at the exposure start position. The exposure start position of the second exposure region ΡΑ2 includes a position on the +Χ side of the second exposure region ΡΑ2 that is disposed at at least a portion of the projection regions pR1, pR3, PR5, and PR7. In the present embodiment, as shown in FIG. 6(C), the exposure start position of the second exposure region pA2 is one end of the second exposure region PA2 on the +X side of the projection regions pR1, PR3, PR5, and PR7. The position of one end of the X side. The control device 5 controls the substrate stage 2 to irradiate the projection areas pRi ❹ to PR7 with the exposure light beam EL', and shifts the second exposure area PA2 of the substrate P in the +χ direction with respect to the projection areas pri to PR7. ΡΑ 2 is exposed. The control device 5 moves the substrate Ρ in the +χ direction until at least the second exposure region ΡΑ2 is disposed at the exposure end position. The exposure end position of the second exposure region ρΑ2 . includes one end of the second exposure region ΡΑ2 on the _χ side, and is disposed at at least a portion of the projection regions PR2, PR4, and PR6. In the present embodiment, the exposure end position of the second exposure region PA2 is at the position on the +X side of the projection regions pR2, pR4, and PR6 on the -X side of the second 23 201040673 exposure region PA2. By the above operation, the exposure of the second exposure region PA2 is completed. In the irradiation of the second exposure region pA2 by the exposure light beam EL, the substrate stage 2 holding the substrate p is moved at a substantially constant speed (fixed speed) in the +X direction. Then, the control device 5 controls the substrate stage 2 on which the substrate P is held in order to start exposure of the third exposure region PA3, and moves the exposure start position of the substrate p from the exposure end position of the second exposure region PA2 to the third exposure region. The third exposure area PA3 is placed at the exposure start position. Further, the third exposure area 3 is disposed outside the projection areas pR1 to pR7 at least until the substrate P moves to the exposure start position of the third exposure area PA3. (D) of Fig. 6 shows a state in which the third exposure region PA3 is disposed at the exposure start position. The exposure start position of the third exposure region PA3 includes a position at which the one end of the third exposure region PA3 is disposed on at least a part of the projection regions pR2, pR4, and PR6. In the present embodiment, as shown in FIG. 6, the exposure start position of the third exposure region PA3 is one end of the third exposure region PA3 on the _X side, and is disposed on the +χ side of the projection regions PR2, PR4, and PR6. The position of one end. The control device 5 controls the substrate stage 2 to irradiate the projection areas pRi to PR7 with the exposure light beam EL, and moves the third exposure area Ρ3 of the substrate p in the _ direction with respect to the projection areas pR1 to pR7. Thereby, the third exposure area PA3 is exposed. 24 201040673 The control device 5 moves the substrate P in the -X direction until at least the third exposure region PA3 is disposed at the exposure end position. The exposure end position of the third exposure region pa3 includes a position on the +X side of the third exposure region PA3 at a position where at least a part of the projection regions PR1, PR3, PR5, and PR7 are disposed. In the present embodiment, the exposure end position of the third exposure region PA3 is one end of the third exposure region PA3 on the +X side, which is disposed at one end of the projection regions pR1, pR3, PR5, and PR7 on the -X side. By the above operation, the exposure of the third exposure region PA3 is ended. In the irradiation of the third exposure region PA3 by the exposure light beam EL, the substrate stage 2 holding the substrate p moves at a substantially constant speed (fixed speed) in the -X direction. Then, the control device 5 controls the substrate stage 2 holding the substrate P to start the exposure of the fourth exposure region PA4, and moves the substrate P from the exposure end position of the third exposure region PA3 to the exposure start position of the fourth exposure region pA4. The fourth exposure region PA4 is placed at the exposure start position. Further, the fourth exposure region PA4 is disposed outside the Q of the projection regions PR1 to 1 > 117 at least before the substrate P moves to the exposure start position of the fourth exposure region PA4. (E) of Fig. 6 shows a state in which the fourth exposure region PA4 is disposed at the exposure start position. The exposure start position of the fourth exposure region PA4 includes a position on the +X side of the fourth exposure region PA4 at a position of at least a part of the projection regions piu, pR3, PR5, and PR7. In the present embodiment, as shown in FIG. 6(E), the exposure start position of the fourth exposure region PA4 is fourth. One end of the exposure region PA4 on the +X side is disposed on the projection regions pR1, pR3, and PR5' PR7. The position of the end of the -X side. 25 201040673 The control device 5 controls the substrate stage 2 to irradiate the projection areas pR1 to PR7 with the exposure light beam EL', and moves the fourth exposure area PA4 of the substrate p in the +χ direction with respect to the projection areas PR1 to pR7. Thereby, the fourth exposure area ΡΑ4 is exposed. The control device 5 moves the substrate Ρ in the +Χ direction until at least the fourth exposure region ΡΑ4 is disposed at the exposure end position. The exposure end position of the fourth exposure region ρ4 includes the one end on the fourth exposure region side disposed at at least a portion (10) of the projection regions PR2, PR4, and PR6. In the present embodiment, as shown in FIG. 6(F), the exposure end position of the fourth exposure region PA4 is the _χ_-end of the fourth exposure region PA4 and is disposed on the +χ side of the projection regions PR2, PR4, and PR6. The position of one end. By the above operation, the exposure of the fourth exposure region ρΑ4 is ended. In the irradiation of the fourth exposure region ΡΜ by the exposure light beam a, the substrate stage 2 holding the substrate ρ is moved at a substantially constant speed in the +Χ direction. The first exposure process ends by the = action. After the first exposure process is completed, the substrate 搬 is carried out (unloaded) from the substrate stage 2. The unloading from the substrate platform 2 is performed including development processing, surname (four) processing, etc. = PTS) processing. Thereby, the i-th is formed on the substrate p and the alignment marks ml to m6 are formed on the substrate by performing the first exposure process and the subsequent process. The pattern 1 of the shirt 1 and the substrate P' (four) sensitizers of the marks mi to m6 are aligned to perform the second exposure process. Then, for the alignment processing, description will be made with reference to S7 <u) 26 201040673. - In the present embodiment, the 2 (four) quasi-mode is prepared (the alignment de-exposure processing program has the first alignment mode and the second alignment mode. The 1st split 5 is used to expose the exposure areas PA1 to PA4 of the substrate P. At least one of the alignment mode and the second alignment mode performs an alignment process of deriving the positions of the exposure areas PA1 to PA4. The first pair of Lai is the following: the exposure of the occupation p: All of the plurality of adjacent alignment marks ml to m6 in the 11 fields PA1 to PA4 are detected, and the positions of the substrate P and the positions of the exposure areas _ to PA4 on the substrate p are derived. That is, in the 'second alignment mode' The control device $ uses the alignment system 9 to detect all the alignment marks ml~m4 of the i-th group G1 to the fourth group. The f 2 pair is the pair based on the second alignment mode. The mode of the quasi-processing result. The second alignment mode is a mode in which the alignment marks specified in the plurality of alignment marks Bml to m6 of the substrate are detected, and based on the detection results of the predetermined alignment marks The i-th alignment mode 〇 results to derive the position of the substrate P and the substrate P The respective positions of the light areas PA1 to PA4. In the f 2 alignment mode, the control device 5 detects the minute alignment marks in the plurality of alignment marks halogen to (4) on the substrate P using the alignment system 9'. In the first alignment mold processing, the alignment pattern will be described later. The control device 5 carries (loads) the substrate P having the first pattern layer and the alignment mark ml to the substrate stage 2. On the substrate p The sensitizer is coated with 27 201040673. After being held by the substrate stage 2, the substrate P is placed at the initial position. The mask 具有 having the pattern corresponding to the second pattern layer formed on the substrate P is carried in (loading) ) is held on the mask platform 1 and held. The control device 5 detects the alignment marks ml to m6 corresponding to the exposure regions ΡΑ1 to ρ4 using the alignment system 9, and derives the positions of the exposure regions PA1 to PA4. First, as shown in FIG. 7(A), the control device 5 measures the position of the substrate platform 2 using the interferometer system 6, and controls the substrate platform 2 to move the substrate P' to align the first group G1. Detection of the markers ml~m6 in the first alignment system 91 In the areas SA1 to SA6, the first alignment system 91 detects the alignment marks ml to m6 of the first group G1. Thereby, the UI control device 5 can derive the first on the coordinate system defined by the interferometer system 6. The position of the alignment mark ^1 to m6 of the group G1. Then, as shown in FIG. 7(B), the control device 5 measures the position of the substrate platform 2 using the interferometer system 6, and controls the substrate platform 2 to move. The substrate P is disposed such that the alignment marks (5) and m6 of the third group G3 are disposed in the detection areas SB1 and SB2 of the second alignment system 92. The alignment marks of the third group G3 by the second alignment system 92 Heart test. Thereby, the control device 5 can guide the position of the alignment mark w and the can of the third group G3 on the coordinate system defined by the interferometer system 6. / then 'as shown in FIG. 7(C) 'the control device 5 uses the interferometer system 6 to position the substrate platform 2, and controls the substrate platform 2 to move the substrate P so that the second group G2 (four) is marked Mi to m6 are disposed in the detection areas SA1 to SA6 of the first alignment system 91. First alignment 28 201040673 The system 91 detects the alignment marks ml to m6 of the second group G2. Thereby, the control device 5 can derive the positions of the alignment marks ml to m6 of the second group G2 on the coordinate system defined by the interferometer system 6. Then, as shown in (D) of FIG. 7, the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment mark of the third group G3 is ml. The ~m6 is disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment ❺ system 91 detects the alignment marks 011 to 1116 of the third group G3. Thereby, the control device 5 can derive the positions of the alignment marks ml to m6 of the third group G3 on the coordinate system defined by the interferometer system 6. Then, as shown in FIG. 7(E), the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate P so that the alignment mark of the fourth group G4 is ml. The ~m0 is disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment system 91 detects the alignment marks ml to m6 of the fourth group G4. By this control aggregation 5, the positions of the alignment marks mi to m6 of the fourth group G4 on the coordinate system defined by the interferometer system 6 can be derived. In the present embodiment, as described with reference to FIG. 7(B) and FIG. 7(D), the first alignment system 91 and the second alignment system 92 use detection regions (SA1, SA6) at both ends, (SB1, SB2), the same alignment marks ml, m6 on the substrate P are detected. The position of the detection areas SA1 to SA6 of the first alignment system 91 on the coordinate system defined by the interferometer system 6 is known by the above-described baseline measurement processing. Therefore, the control device 5 measures the substrate 29 by the interferometer system 6.

201040673 1 A The position of the platform 2 is aligned with the mark mi, disposed in the detection areas SA1, SA6 of the first alignment system 91, and will be the same as the alignment mark mi disposed in the detection areas SA1, SA6. The alignment marks m6 are disposed in the detection areas SB1 and SB2 of the second alignment system 92, whereby the detection area SB1 of the second alignment system 92 on the coordinate system defined by the interferometer system 6 can be obtained. , the location of SB2. Further, the control device 5 can detect the alignment marks ml and m6 on the substrate P by the first alignment system 91 and the alignment marks ml and m6 on the substrate p by the second alignment system 92. The positional relationship between the detection areas SA1 to SA6 of the i-th alignment system 91 and the detection areas SB1 and SB2 of the second alignment system 92 is derived. Further, when the positional relationship between the detection areas SA1 to SA6 of the first alignment system 91 and the detection area SB SB2 of the second alignment system 92 is derived, the substrate platform may be used without using the alignment marks on the substrate P. Reference mark on 2 (transmission portion 45). The control device 5 measures the position of the substrate stage 2 by the interferometer system 6, and arranges the reference mark (transmission portion 45) in the detection areas SA1, SA6 of the first alignment system 91, and the detection area SA1. The reference marks having the same reference marks arranged in the SA 6 are disposed in the detection areas SB1 and SB2 of the second alignment system 92, whereby the second alignment system on the coordinate system defined by the interferometer system 6 can be obtained. The position of the detection areas SB1, SB2 of the system %. The control device 5 can check the reference mark on the substrate platform 2 according to the second alignment system 91 to check the scale of the second alignment button 92 on the substrate flat W to derive the i-th alignment system. Detection areas SA1 to SA6H; 30 201040673 The positional relationship of the detection areas SB1 and SB2 of the alignment system 92. Further, when the positional relationship between the detection areas sai to SA6 of the first alignment system 91 and the detection area SB SB2 of the second alignment system 92 is derived, the mark (alignment mark, The reference mark) may be different from the mark (alignment mark, reference mark) detected by the second alignment system 92. ’

By the above operation, the control device 5 uses the alignment system 9 to detect the alignment marks mi to all of the plurality of exposure areas PA1 to PA4. In the present embodiment, the alignment marks corresponding to the first exposure region PA1 are the alignment marks ml to m3 of the third group G3 and the alignment marks ml to m3 of the fourth group ^. The alignment marks corresponding to the second exposure area PA2 are the alignment marks m4 to m6 of the third group G3 and the alignment marks m4 to m6 of the fourth group ^. The alignment marks corresponding to the third exposure area PA3 are the alignment marks m4 to m6 of the first group G1 and the alignment marks m4 to m6 of the second group ^. The alignment marks corresponding to the fourth exposure region PA4 are the alignment marks ml to m3 of the first group G1 and the alignment marks ml to m3 of the second group ^. The control device 5 can detect the positions of the alignment marks 1111 to 1116 of the first group G1 to the fourth group G4 detected by the ith alignment system 91 and the position detected by the second alignment system 92. The positions of the alignment marks ml and m6 of the third group G3 derive the position of the substrate P on the coordinate system defined by the interferometer system 6 and the positions of the plurality of exposure regions PA1 to pA4. 31 201040673 Next, the second exposure processing will be described with reference to FIGS. 7(A) to 7(F). The position at which the exposure regions pAi to pA4 are derived by the execution of the alignment processing = the rear control unit 5 starts the second exposure processing for forming the second pattern layer on the substrate p. In the second embodiment, in the second exposure processing, the plurality of exposure areas PA1 to PA4 + ' are first (the exposure is started in the exposure area pA1, and then the second exposure area is exposed), and then the third exposure area PA3 is received. After the exposure, the fourth exposure region PA4 is exposed to light. The control device 5 controls the exposure of the substrate stage 2 holding the substrate P to the exposure start position of the second exposure region PA1 in order to start the exposure of the first exposure region pA1. The exposure region pA1 is disposed at the exposure start position. Further, the first exposure region pA1 is disposed outside the projection regions pR1 to PR7 at least before the substrate P moves to the exposure start position of the second exposure region pA1. The control unit 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam EL, and the first exposure area PA1 of the substrate P with respect to the projection area. PR1 to PR7 move in the _χ direction. Thereby, the first exposure region ΡΑ1 is exposed. The control device 5 moves the substrate Ρ in the −X direction until at least the first exposure region Ρ 1 is disposed at the exposure end position. By the above operation, the exposure of the first exposure region PA1 is completed. Thus, in the present embodiment, the plurality of exposure regions ΡΑ1 to ΡΑ4 32 201040673 = the first of the lines to be exposed first Exposure area PA1 = plate. Movement in the X-axis direction; Field P"1 in the IaH state, in the second exposure process 'on multiple exposure areas

The order of line exposure and material exposure (4) pa Bu ^ processing are roughly the same. That is, in the second exposure processing device 5 - the substrate is made? The same as the track (moving path) of the substrate P that is performed by the reference 2, the thin (four) 1 light is applied to the plurality of exposures in the first exposure process: the substrate Ρ in the sequential exposure is relatively The movement path (moving path) of the substrate Ρ with respect to the projection regions PR1 to PR7 when the plurality of exposure regions ΡΑ1 to ΡΑ4 are sequentially exposed in the second exposure process is substantially : flow == cap_domain - performing the ir exposure process on the first _ layer of the substrate P, the alignment process performed when the second pattern layer is formed on the first pattern layer, and The substrate Pji forms the second _ phase and the second exposure process is performed. The day and month 0 ^ 33 201040673 Next, an example of the second exposure process will be described. In the second exposure processing, the plurality of substrates P on which the first pattern layer is formed are sequentially exposed. For example, the exposure light beam EL from the pattern of the predetermined mask 使用 is used to set the number of sheets to one group. The plurality of substrates p (batch (1 〇t)) are sequentially exposed. Furthermore, the plurality of substrates U of the one batch are in the first! The substrate P which is sequentially exposed in the exposure process to form the i-th pattern layer and subjected to various processes such as development. As described above, in the present embodiment, the first alignment mode and the second alignment mode are prepared, and at least the first mode and the second alignment mode are selected before the second exposure process is performed, and the selection is based on the selection. The pair performs the alignment process. In the present embodiment, as a predetermined number of sheets (for example, a plurality of substrates p of one batch, one from the first substrate p (batch substrate P) to a predetermined number of sheets (for example, five sheets) In the alignment processing during exposure, the second alignment mode is selected. As shown in FIG. 7 = 〜 〜 7 (7), etc., the 'f丨 alignment mode is a plurality of adjacent alignments of the axes PA1 to PA4. 2:6 = the pattern of the impact detection 'and (4) the P of the filament P and the position of the silk domain PA1~PA4. In the present embodiment, according to the ith alignment mode, the first 至 至 至 至The number of sheets of the substrate p is subjected to alignment processing. After the light is applied, the control device 5 performs exposure processing on the substrate ρ according to the result of the ray and according to the alignment processing 34.

201040673 ' ---Γ -- The second alignment mode is a mode that uses the alignment processing based on the J-alignment mode. In the t-th embodiment, the second fresh mode is a = mode: _ ' is performed on the mark specified in the plurality of alignment marks ml to m6 on the substrate p, and the alignment pattern is determined according to the material mark of Wei Ding. As a result of the derivation, (10) the position of the P and the positions of the exposure areas PA1 to PA4 on the substrate p. In the following, the example of the second aspect mode _ quasi-processing and the exposure area (second exposure production) of the substrate P performed based on the result of the alignment process will be described with reference to FIG. 8 (4) to FIG. 8 (c). Description of Embodiments = Control of the farm 5 The substrate platform 2 is carried (loaded) to the substrate p having the pattern layer and the alignment marks ml to m6. On the substrate p, a sensitizer is applied. After being held by the substrate stage 2, the substrate p is placed at the initial position. A mask 具有 having a pattern corresponding to the second pattern layer formed on the substrate P is carried (loaded) onto the mask stage , and held: the control device 5 uses the alignment system 9 to align the substrate ρ The predetermined alignment marks ml to m6 are detected, and the positions of the exposure regions pA1 to ρ4 are derived. First, as shown in (8) of FIG. 8, the control device 5 measures the position of the substrate stage 2 using the interferometer system 6, and controls the substrate stage 2 to move the substrate ' to make the alignment mark of the first group G1. The ml to m6 are disposed in the detection areas SA1 to SA6 of the first alignment system 91. The first alignment system 91 detects the alignment marks ... to (10) of the i-th group G1. By this, the position of the alignment marks ml to m6 of the first group G1 on the coordinate system determined by the dry material 6 can be derived. 35 201040673 Then, as shown in FIG. 8(B), the control device 5 uses the interferometer system 6 to measure the position of the substrate platform 2, and controls the substrate platform 2 to move the base, P to make the third group G3 The alignment marks w and m6 are disposed in the detection areas SB 1 and SB2 of the second alignment system 92. The second alignment system 92 detects the alignment marks ml and πι6 of the third group G3. Thereby, the position of the alignment marks ml and m6 of the third group G3 on the coordinate system defined by the interferometer system 6 can be controlled. The control device 5 detects the alignment marks mi to m6 of the second group G1 based on the use of the second alignment system 91 and the alignment mark mb m6 for the third group G3 using the second alignment system 92. As a result of the detection, the position of the substrate p on the coordinate system defined by the interferometer system 6 is derived. As described above, the position of the substrate p on the coordinate system defined by the interferometer system 6 is obtained by the alignment processing based on the first alignment mode (hereinafter referred to as position data (data) n and The respective positions of the exposure regions PA1 to PA4 on the substrate p (hereinafter referred to as position data 2 as appropriate). The position material 1 is information relating to the position of the entire substrate p, and includes, for example, the position (edge) of the substrate P, and the like. a predetermined reference position on the substrate p. The position data 2 is a position of each of the exposure regions pA1 to PA4 with respect to a predetermined reference position on the substrate P. Further, the positional data 1 may be performed according to the ith alignment mode. The data obtained by aligning the batch of the processing to the predetermined number of the substrates P in the predetermined number of substrates may be the average value of the data obtained from each of the predetermined number of substrates p. The position data 2 can be obtained from the batch of the first batch to the predetermined number of pieces in accordance with the method of 36 Ο ❹ 201040673, or the number of pieces according to the number of sheets. Obtained from each of the substrate defects The average value of the material is obtained. The position of the substrate ρ on the coordinate system defined by the interferometer system 6 is obtained by the alignment process based on the second alignment mode (the following is suitable for the vertical data 3). The control device 5 can obtain the position data 3' based on the derivation result of the alignment processing based on the first alignment pattern, that is, the position data 1 and the position data 2, and the result of the alignment processing based on the second alignment mode. The position of each of the exposure areas PA1 to PA4 on the substrate ρ on the coordinate system defined by the interferometer system 6 (hereinafter referred to as position data 4 as appropriate). In the present embodiment, it is considered that the exposure areas PA1 to PA4 are soiled. The position of the predetermined reference position on the substrate P (the positional relationship between the reference position on the substrate p and the exposure regions pA1 to pA4) is based on the execution of the alignment process based on the first alignment mode and based on the second The execution of the alignment process of the alignment mode does not substantially change. Therefore, the control device 5 can detect the alignment mark ml based on the second alignment system 92 using the first alignment system 9 and the second alignment mode. The result of m6 and the third Quasi mode = derivation result (position data 2), to derive the position of the substrate P (position data 3) and the position of each of the exposure areas pA1 to pA4 on the substrate ρ (position data 4). Moreover, as described above, control 裴In the alignment processing based on the second alignment mode, each of the detection regions s A i and SA6 at both ends of the i-th alignment system 9 i and the detection regions SB1 and SB 2 at both ends of the second alignment system 92 The same alignment marks ml and m6 on the substrate P are disposed, and the same alignment marks ml and m6 of 201040673 are formed to obtain the detection areas SA1 to SA6 and the second pair of the second alignment system 91. The positional relationship of the detection areas SB1, SB2 of the quasi-system%. Therefore, the control device $ can detect the alignment marks ml to m6 of the first group G1 and use the second pair based on the alignment processing towel based on the second alignment mode. The quasi-system 92 detects the alignment marks a and m6 of the third group G3, and obtains the position f material 3 and the position data 4 with high precision. After the respective positions (position data 4) of the respective exposure areas PA1 to PA4 are obtained, the control device 5 starts exposure of the exposure areas pA1 to pA4. In the present embodiment, after the alignment processing by the second alignment mode is performed, the control device 5 first exposes the first exposure region PA1 among the plurality of exposure regions pA1 to pA4, and then the second exposure region. The exposure is performed by pA2. Then, the third exposure area PA3 is exposed, and finally the fourth exposure area PA4 is exposed. In order to start exposure of the i-th exposure region pA1, the control device 5 controls the substrate stage 2 holding the substrate p to move to the exposure start position of the second exposure region pA1 so that the first exposure region PA1 is placed at the exposure start position. Further, at least the first exposure region PA1 is disposed outside the projection regions PR1 to PR7 before the substrate p moves to the exposure start position of the J-th exposure region PA1. (C) of Fig. 8 shows a state in which the first exposure region pA1 is placed at the exposure start position. The control unit 5 controls the substrate stage 2 and irradiates the projection areas PR1 to PR7 with the exposure area EL, so that the i-th exposure area PA1 of the substrate p is moved in the _χ direction with respect to the projection areas PR1 to pR7.

201040673 moving. Thereby, the first exposure area PA1 is exposed. The control device 5 moves the tablet P in the -χ direction until at least the ith exposure region PA1 is disposed at the ς position. By the above operation, the exposure of the first exposure region ΡΑ1 is ended. In the present embodiment, the substrate Ρ at the time of exposure of the first exposure region PA1 exposed by the exposure processing performed after the fresh processing in the first alignment mode is performed on the plurality of exposure regions ρΑι to ρΑ4 ί. The direction of movement is the same as the direction in which the substrate p is moved in the direction of the x-axis (four) when the exposure is performed on the first exposure region that is first exposed in the exposure process performed after the second alignment = processing (_χ direction) ). In the exposure processing executed after the alignment processing by the second alignment mode in the present embodiment, the order of exposure of the plurality of exposure areas PA1 to ΡΑ4 and the exposure of each of the exposure areas PA1 to ΡΑ4 are performed. The movement direction of the base ^, the exposure correction position, and the exposure green beam position are substantially the same as the alignment processing based on the first alignment mode (4). = 'In the exposure process performed after the second spleen-based grading, on the one hand, the substrate is etched with the substrate P described with reference to FIG. 6 (in) to (F) (Moving path) The same moving trajectory (moving path) and moving 'on the other hand, sequentially exposing a plurality of exposure areas PM to (five). In other words, in the present embodiment, the substrate P is sequentially exposed to the plurality of exposure regions pA1 to pA4 in the exposure processing performed after the alignment processing by the second alignment mode with respect to the projection regions PR1 to PR7. Movement 39 201040673 trajectory (migration path) and substrate p with respect to the projection (four) domain PR1 to the plurality of exposure regions PA1 to PA4 in the exposure processing performed at the material based on the second alignment mode The moving path of PR7 is the same as the moving path). In the present embodiment, the second alignment button 92 is disposed on the side with respect to the projection regions PR1 to PR7, and the control relay 5 detects the pair in the second alignment system 92 based on the alignment pattern of the second alignment pattern. After the mark m6, the first exposure area pA1 can be immediately moved to the exposure start position. § The alignment mark on the substrate p held by the substrate flat σ 2, m6 is disposed on the detection region side of the second alignment system 92, and the position of the substrate platform 2 in the SB 2 (hereinafter referred to as a pair as appropriate) When the end to the side of the first exposure area PA1 is disposed at the exposure start position of the substrate stage 2 on the +X side of the projection areas pR2, pR4, and PR6, the substrate stage 2 is about the X axis. The direction moves in the _χ direction between the alignment position and the exposure start position in an acceleration state. Further, the moving state of the substrate stage 2 near the exposure start position is at least one of a steady state and a constant speed state. Further, 'the end of the ith side of the i-th exposure region pA1 is disposed at the exposure start position 4 of the substrate stage 2 at the +χ _ end of the projection regions PR2, PR4, and PR6, and moves to the +Χ side of the first exposure frame 1 When the end is disposed at one end on the -X side of the projection areas PIU, pR3, pR5, and pR7, and the exposure end position of the plate stage 2 is reached, the substrate stage 2 moves in the -X direction at a constant speed state. In the present embodiment, the position is set to the +χ side in the X-axis direction with respect to the projection regions PR1 to PR7, and at least the distance necessary for the minimum distance of the substrate platform 2 is separated. The detection marks SB1 and SB2 of the second alignment system 92 for detecting the alignment marks ml and m2 of the third group G3 adjacent to the exposure area pA1. Thereby, the control device 5 detects the alignment mark 1 m6 of the third group G3 using the second alignment system 92, and immediately shifts to the exposure processing of the first exposure area PA1. The minimum required assist distance of the substrate stage 2 means that the substrate stage 2 in the stationary state moves from the first position to the side in the predetermined direction (for example, the -X side) at the first position until the regulation is reached. The distance from the second position of the target speed. The assist distance includes the acceleration distance of the substrate platform 2 and the substrate platform 2 for stable stable distance. Between the first position and the second position, the substrate stage 2 is moved in an accelerated state, and the substrate stage 2 is moved in a stable state in the vicinity of the second position. The necessary minimum walking distance of the substrate platform 2 is, for example, a distance corresponding to the moving performance of the substrate competing table 2, which is based on the performance of the driving system 4 and the weight of the substrate platform 2. The substrate stage 2 that reaches the target speed until the second position is soil can be at the target speed between the second position and the third position in the predetermined direction (_χ direction) with respect to the second position. Move at a constant speed. In the aligned position, the substrate platform 2 in a substantially stationary state moves from the alignment position , until the exposure start position is reached, and the distance between the alignment position and the exposure start position is greater than the substrate in order to reach the target scanning speed. The necessary minimum walking distance for platform 2 is longer. 201040673 FIG. 9 is a schematic diagram showing the relationship between the projection optical system PL2, the second alignment system 92, and the substrate P (substrate platform 2). The detection areas SB1 and SB2 of the second alignment system 92 are disposed at a position on the X-axis direction (scanning direction) with respect to the projection area PR2 on the +χ side and at least the minimum required assist distance LJ. The second alignment system 92 can detect the alignment marks ml and m6 of the third group G3 on the substrate P adjacent to the first exposure region pAl that is first exposed among the plurality of exposure regions ΡΑ1 to ΡΑ4. Thereby, the distance LA between the alignment position and the exposure start position can be made longer than the necessary minimum assist distance u of the substrate platform 2. The alignment mark of the third group G3 on the substrate P held by the substrate platform 2 in which the field alignment position is arranged in a substantially stationary state is arranged in the detection areas SB1 and SB2 of the second alignment system %. On the other hand, after the second alignment system 92 detects the substrate platform 2, the movement toward the _reverse direction is started, whereby the target scanning speed can be reached until the exposure start position is reached. The substrate platform 2 that has reached the exposure start position moves toward the target in the -X^ direction, and moves to the exposure end position at the constant speed state. The first exposure area PA1 is on the one hand with respect to the projection area PR7. Mobile '- aspects are exposed. Further, the alignment position ^^丨 exposure area pAi is disposed at the external touch position of the projection area /2. Moreover, in the present embodiment, the (4) LA at the position of the light (4) is consistent with the minimum necessary assist. That is, in the present embodiment, it is necessary that the minimum position of the first end and the alignment position are the same, and the second position of the other end of the assist distance GJ is the same as the exposure start position 42 201040673 - again The distance LA between the alignment position and the exposure start position may be longer than the necessary minimum value = the assist distance u. At this time, the substrate stage 2 can reach the target scanning speed before reaching the exposure start position. As described above, according to the present embodiment, at the position which is on the +X side with respect to the projection areas PR1 to PR7 and spaced apart by the minimum necessary assist distance, the first one of the plurality of exposure areas PA1 to PA4 is received. The detection regions SB1 and SB6 in which the alignment marks ml and m6 of the third group (7) adjacent to the first exposure region PA1 adjacent to the first exposure region PA1 exposed by the first exposure region PA1 are exposed, and the second pair of the positions for deriving the first exposure region PA1 are provided. The quasi-system 92 allows the device 5 to move in the _X direction after the substrate platform 2 is placed at the aligned position and the first & alignment line 92 is used to perform the de-marking w and (4). The first exposure area is "light." Therefore, the time required for the alignment process can be shortened. Therefore, the decrease in the amount of processing can be suppressed, and the decrease in the productivity of the element can be suppressed. In the present embodiment, the detection area of the i-th alignment system 91 may be arranged such that the detection area of the i-th alignment system 91 is spaced apart from the projection area PR1 by J, 2 by a distance equal to or smaller than the minimum necessary assist distance. After the borrowing, the alignment index mi~m6' can be detected by the alignment system 91. For the pair i: the direction movement is started, and at least one of the exposure areas PA1 Α 邻接4 adjacent to the _Χ side for the phase m6 is immediately started. Exposure processing. In the present embodiment, the first exposure of the plurality of exposure areas PA1 to ΡΑ4 is the first exposure process! Exposure area (5) into 43 201040673 Light exposure first time · sweeping side in the second exposure at the first profit of the second, =) moving direction, and the right time in the scanning direction Γ! exposed the first brother 1 exposure area The exposure direction is the same direction as the direction of movement to the substrate platform L:=, p is moved straight into the substrate platform 2 and becomes longer. Therefore, it is possible to suppress the amount of processing = the moving distance of the substrate platform 2 from the exposure area. The movement of the plurality of exposure areas PIU to PR7 is sequentially processed with respect to the shot exposure areas PA1 to PA4. In the case of more than 爹Fi^PT?1 nr» exposure of the substrate platform 2 relative = 1 field PR1 ~ PR7 movements are substantially the same, because the cattle exposure processing (four) in the approximate _ device strip exposure. For example, even when the main body 13 or the like is displaced corresponding to the movement (position) of if:: 2, the movement trajectory of the substrate flat opening 2 is at the first! The exposure process is the same as in the second exposure process. Thus, in the first exposure process and the second exposure process, the exposure areas PA1 to PA4 can be exposed under substantially the same device conditions (deformation conditions of the main body 13 and the like). . Further, in the present embodiment, the second alignment system 92 detects the alignment marks ml and m6 at both ends of the plurality of alignment marks ml to m6 arranged in the axis direction, so that the control device 5 can be based on the second By aligning the detection results of the system 92, the position of the substrate p and the positions of the exposure areas PA1 to PA4 are accurately extracted. Further, in the present embodiment, the first alignment system 91 and the second alignment 44 201040673 system 92 detect the alignment marks ml and m6 on the substrate ρ using the detection regions at both ends, so that the control device 5 can Based on the detection result, the position of the substrate P and the positions of the exposure regions PA1 to PA4 are accurately extracted.

Further, in the present embodiment, the number of detection areas (detectors) of the second alignment system 92 is smaller than the number of detection areas (detectors) of the first alignment system 91. Thereby, a space between the second alignment system 92 and the substrate stage 2 (above the substrate stage 2) can be secured. In the present embodiment, the loading operation of the substrate P with respect to the substrate stage 2 and the removal operation of the substrate P from the substrate platform 2 can be smoothly performed from the +X side with respect to the projection system PS. Further, in the present embodiment, when the plurality of substrates P in the plurality of substrates are sequentially exposed, the substrate ρ is exposed from the beginning of the batch to the predetermined number of sheets (for example, about 5 sheets). The case where the second alignment mode is selected when the remaining substrate P in the batch is exposed is described, but for example, a plurality of pattern layers (for example, five patterns) are laminated on the substrate p. In the case of the layer), the second alignment mode and the second alignment mode may be selected according to at least the required pattern layer=stacking precision', for example, if a high overlap accuracy day temple is required, and the ^ alignment mode is selected, 2 ^Waheye ί coarser (rCmgh) overlap accuracy is also allowed, select the first - pair = borrowed = 2 彳 pair = 2 rows alignment processing, can shrink the time, and can suppress the processing Decline. <Second embodiment> The second embodiment will be described. In the following description, the same or equivalent components as those in the above embodiment are denoted by the same reference numerals, and the description thereof will be simplified or omitted. Fig. 10 is a schematic diagram showing an example of the positional relationship between the projection areas PR 丨 to pR7, the detection areas SA1 to SA6, SB SB2, and the substrate p in the second embodiment. As shown in FIG. 10, in the present embodiment, the surface of the substrate p has six exposure regions PA1 to ΡΑ6 projected by the image of the mask pattern, and the first exposure processing of the present embodiment is referred to FIG. (Α) to (F) of Fig. 11 will be explained. In the first embodiment, in the first exposure processing, the exposure is first started from the second exposure region PA2 among the plurality of exposure regions PA1 to PA6, and then the first exposure region PA1 is exposed, and then the third exposure region PA3 is exposed. Then, the fourth exposure area PA4 is exposed, and then the fifth exposure area PA5 is exposed, and finally the sixth exposure area pA6 is exposed. (A) of Fig. 11 shows a state in which the second exposure region PA2 is placed at the exposure start position. The control device 5 controls the substrate stage 2 to irradiate the projection areas PR1 to PR7 with the exposure light beam el', and moves the second exposure area PA2 of the substrate p in the _χ direction with respect to the projection areas pR1 to pR7. Thereby, the second exposure area ΡΑ2 is exposed. Then, the control device 5 starts exposure of the first exposure region ΡΑ1. (Β) of Fig. 11 indicates a state in which the first exposure region ρ Αΐ is disposed at the exposure start position. The control device 5 controls the substrate stage 2 to irradiate the projection regions pR1 to PR7 with the exposure light beam EL, and moves the first exposure region PA1 of the substrate P in the +χ direction with respect to the projection regions pR1 to pR7. Thereby, 46 201040673 The second exposure area PA2 is exposed. Then, the control device 5 starts exposure of the third exposure region pA3. (C) of Fig. 11 shows a state in which the third exposure region PA3 is disposed at the exposure start position. The control device 5 controls the substrate stage 2 to irradiate the projection areas pR1 to PR7 with the exposure light beam EL'. On the other hand, the third exposure area PA3 of the substrate p is moved in the -X direction with respect to the projection areas PR1 to PR7. Thereby, the third exposure area PA3 is exposed. Then, the control device 5 starts exposure of the fourth exposure region PA4. (D) of Fig. 11 shows a state in which the fourth exposure region PA4 is disposed at the exposure start position. The control device 5 controls the substrate stage 2 to irradiate the projection areas pRi to PR7 with the exposure light beam EL'. On the other hand, the fourth exposure area PA4 of the substrate P is moved in the +? direction with respect to the projection areas PR1 to PR7. Thereby, the fourth exposure area ΡΑ4 is exposed. Then, the control device 5 starts exposure of the fifth exposure region ΡΑ5. Fig. 11, (Ε) shows the state in which the fifth exposure region ΡΑ5 S2* is placed at the exposure start position. The control device 5 - controls the substrate platform 2 and exposes the projection regions pR1 ❹ PR PR7 to the tow, thereby making the substrate? The fifth exposure region PA5 moves in the _χ direction with respect to the projection regions PR1 to PR7. Thereby, the fifth exposure area ΡΑ5 is exposed. Then, the operation system 5 starts the exposure of the sixth exposure region ρΑ6. (7) of Fig. U indicates that the intestine of the sixth exposure region is placed at the exposure start position test state. The control device 5 controls the substrate stage 2 to irradiate the projection areas pR] to 7 with the exposure light beam EL, and moves the sixth exposure area OFF PA6 of the substrate p in the +? direction with respect to the projection areas PR1 to pR7. Thereby, 47 201040673 The sixth exposure area PA6 is exposed. With the above actions, the first exposure processing is continued, and based on the first! Alignment mode 2 (A) ~ Figure 12 (7) is performed. Refer to Figure 12 for the alignment of the second group G2 =it: C mark, π^~Γη6, and the alignment mark of the fourth group G4. 91 1 5 ^ ^ ^ ^ W The alignment marks ml to m6 of the first group G1 are measured. Then, as shown in (8) of Fig. 12, the control system 92 is controlled to detect the center of the alignment mark of the third group G3. Further, as shown in Fig. U (C), the control device 5 detects the alignment mark ... - heart of the second group G2 by the bare system 9i. Then, as shown in (D) of Fig. 12, the control device 5 detects the alignment mark of the third group G3 by adding the "0" (1) by the i-th alignment system 91. Then, as shown in Fig. 12(E), the control device 5 detects the alignment marks ml to m6 of the fourth group G4 by the i-th alignment system 91. In the present embodiment, as described with reference to FIG. 12(B) and FIG. 12(D), the first alignment system 91 and the second alignment system % use detection regions at both ends (SA BU SA6). And (SB SB2), to detect the same alignment marks ml, m6 on the substrate P. In the present embodiment, the alignment corresponding to the first exposure region PA1 is the alignment marks m to m2 of the third group G3 and the alignment marks ml and m2 of the fourth group G4. Alignment corresponding to the second exposure area PA2 棹 48 201040673 Ο

These are the alignment marks m3 and m4 of the third group G3 and the alignment marks m3 and m4 of the fourth group G4. The alignment marks corresponding to the third exposure region PA3 are the alignment marks m5 and m6 of the third group G3 and the alignment marks m5 and m6 of the fourth group G4. The alignment marks corresponding to the fourth exposure region PA4 are the alignment marks m5 and m6 of the first group G1 and the alignment marks m5 and m6 of the second group G2. The alignment marks corresponding to the fifth exposure region PA5 are The alignment marks m3 and m4 of the first group G1 and the alignment marks m3 and m4 of the second group G2. The alignment marks corresponding to the sixth exposure area ΡΑό are the alignment marks mi and m2 of the first group G1 and the alignment marks ml and m2 of the second group G2. The control device 5 can detect the positions of the alignment marks ml to m6 of the first group G1 to the fourth group G4 detected by the first alignment system 91 and the second detection system %. The alignment of the group G3 is recorded with the positions of ml and m6, and the position of the substrate P on the coordinate system defined by the interferometer system 6 and the positions of the plurality of exposure regions pA1 to pA4 are derived. 7 • Perform the second exposure process. In the second exposure processing, the order of exposure of the plurality of exposure areas PA1 to PA6 and the movement direction, the exposure start position, and the exposure end position ' and the third exposure processing of the substrate p when the exposure areas M1 to PA6 are exposed are exposed. Roughly the same. In other words, in the second exposure processing, on the one hand, the substrate p is instructed by the substrate p of the reference (f) of FIG. 11 (F), and the moving path = the moving path (moving path) In the above, the first exposure process for forming the first pattern layer on the substrate P in the first embodiment is performed on the substrate P. The alignment process performed when the second pattern layer is formed and the second exposure process for forming the second pattern layer on the substrate P have been described. Then, in the alignment process based on the second alignment mode of the present embodiment, Referring to Fig. 13 (A) to Fig. 13 (D), the substrate P is placed at the initial position as shown in Fig. 13 (A). Then, as shown in Fig. 13 (B), the control device The first alignment system 91 detects the alignment marks ml to m6 of the first group G1. Then, as shown in FIG. 13(C), the control device 5 detects the third group by the second alignment system 92. The alignment marks ml, m6 of the group G3. The control device 5 detects the alignment marks ml to m6 of the second group G1 based on the use of the first alignment system 91. The second alignment system 92 detects the position of the substrate p and the exposure areas PA1 to PA6 by using the second alignment system 92 to detect the alignment mark m m6 of the third group G3 and the result of derivation of the first alignment mode. After the position (position data 4) of each of the exposure areas PA1 to PA6 is obtained, the control device 5 starts exposure of the exposure areas PA1 to PA6. As shown in (D) of Fig. 13, the second exposure area The PA2 is disposed at the exposure start position. In the exposure processing executed after the alignment processing by the second alignment mode, the exposure of the plurality of exposure areas PA1 to PA6 and the exposure area PA1 are performed on the exposure area PA1. The movement direction, the exposure start position, and the exposure end position of the substrate p during the exposure to the PA6 are also performed after the alignment processing based on the exposure processing of 50 201040673 is substantially the first alignment mode. As explained above, In the present embodiment, the substrate is lowered, and the substrate 1 can be exposed well. The amount of processing can be suppressed. U: f is the substrate having the exposed regions PA1 to PA6 and the aligned W ml to m6 shown in FIG. p Execution of the above first exposure process, including the fourth case,

Lu Cai on the old m匕栝 first brother 2 alignment mode alignment processing and ¥ 2 exposure, the village to suppress the substrate P is well exposed. In the 圔14, the substrate has six exposure areas PA1~

PA6. The exposure areas PA1 and PA2 are arranged at substantially equal intervals along the axial direction of the γ舳古 a2 L 2 to the Y-axis direction at substantially equal intervals, and the exposure area is arranged at substantially equal intervals. The ships are arranged at substantially equal intervals along the direction of the ¥ axis. The exposure area PA1 is disposed on the -γ side with respect to the exposure gauge field pA2. The exposure area PA3 is disposed on the +Y side with respect to the exposure area pA4. The exposure area PA5 is disposed on the _¥ side with respect to the exposure area PA5. The exposure areas PA1, PA2 are arranged on the +X side with respect to the exposure areas pA3, pA4. The exposure areas PA5 and PA6 are arranged on the side of the exposure areas pA3 and pA4. Further, the surface of the substrate P has the alignment marks ml to m6 of the sixth group G6 of the i-th group (1). <Third Embodiment> Next, a third embodiment will be described. In the following description, the same or equivalent components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof will be simplified or omitted. 51 (2010) (A) to (D) of FIG. 15 are views showing an example of the alignment system 9 of the third embodiment. In the present embodiment, the positions of the detection regions (sAl, SA6) at both ends of the first alignment system 91 in the γ-axis direction are different from the positions of the detection regions (sbi, SB2) at both ends of the second alignment system 92. . Next, an example of the alignment processing based on the second alignment mode will be described. As shown in Fig. 15 (A), the substrate p is placed at the initial position. Then, as shown in Fig. 15 (B), the control device 5 detects the alignment marks m1 to m6 of the first group G1 by the first alignment system 91. Then, as shown in Fig. 15 (C), the control device 5 detects the alignment marks ml, m6 of the 苐3 group G3 by the second alignment system 92. The control device 5 derives the position of the substrate P and the respective positions of the exposure regions PA1 to PA6 based on the detection result of the alignment system 9, and starts exposure of the exposure regions PA1 to PA6. In the present embodiment, the first exposure area PA1 among the plurality of exposure areas PA1 to PA6 is first exposed. As shown in Fig. 15 (D), the first exposure region PA1 is disposed at the exposure start position, and exposure of the first exposure region PA1 is started. In the present embodiment, the positions of the detection regions (SA1, SA6) at both ends of the first alignment system 91 in the Y-axis direction are different from the positions of the detection regions (SB1, SB2) at both ends of the second alignment system 92. Therefore, the position (alignment position) of the substrate platform 2 in which the alignment marks on the substrate P held by the substrate stage 2 are disposed on the detection areas SB1 and SB2 of the second alignment system 92 can be shortened until the The distance from the exposure start position of the substrate stage 2 at one end on the +X side of the projection regions PR2, PR4, and PR6 is disposed at one end of the exposure area pAi. That is, the moving distance of the substrate stage 2 when the state shown in Fig. 15 (C) is changed to the state shown in Fig. 15 (D) can be shortened. In the present embodiment, as shown in FIG. 15(C), when the substrate stage 2 is placed at the aligned position, the positions of the projection areas PR1 to PR7 and the first exposure area PA1 which is first exposed are described with respect to the γ-axis direction. To be roughly the same. Thus, the moving distance of the substrate stage 2 can be shortened, so that the decrease in the amount of processing can be suppressed. ^ Fourth Embodiment Next, a fourth embodiment will be described. In the following description, the same or equivalent components as those in the above embodiment are denoted by the same reference numerals, and the description thereof will be simplified or omitted. Fig. 16 is a view showing an example of the alignment system 9 of the fourth embodiment. In the present embodiment, with respect to the X-axis direction, the detection areas SA1 to SA6 of the second alignment system 91 and the detection area of the second alignment system 92, the distance LX1 of SB2, and the first on the substrate p! The alignment marks 〇 ml to m6 of the group (1) are substantially the same as the distance LX2 of the alignment marks of the third group G3. In the present embodiment, when the alignment mark is detected in the second alignment mode, the alignment marks mi to m6 of the third group G1 using the "alignment system" can be simultaneously detected. Detection of the alignment marks ml and smear with the third group G3 using the second alignment system %. Therefore, the amount of processing decreases. Further, as the substrate P of the above-described first to fourth embodiments, not only 53 201040673 can be applied to a glass substrate for a display element, but also a semiconductor wafer or a thin film magnetic head for manufacturing a semiconductor element (thin) Film magnetic head) A ceramic wafer used for a film or a mask or a mask used in an exposure apparatus (synthetic quartz, silicon wafer). Further, as the exposure apparatus EX, in addition to the step-and-scan method in which the mask μ is moved in synchronization with the substrate P and the substrate P is scanned and exposed by the exposure light beam EL of the pattern of the mask [V] In addition to the scanning type exposure device (scanning stepper), the pattern of the mask M may be uniformly exposed and the substrate P may be sequentially stepped in a state where the mask Μ and the substrate p are stationary. A step-and-repeat type of projection exposure apparatus (stepper). Moreover, the present invention is also applicable to a double (-) platform type having a plurality of substrate platforms as disclosed in the specification of US Pat. No. 6,431, No. 7, the specification of US Pat. No. 6,208,407, and the specification of US Pat. No. 6,262,796. Exposure device. The present invention can also be applied to a device disclosed in the specification of the European Patent Application Publication No. 1713113, etc., which has a substrate platform for holding the substrate and a flat substrate for the gift. And finely smashed into a benchmark with a reference mark a various optical inductance (four). Moreover, it is possible to have an exposure device with a substrate flat and a leaf measuring platform. > Field, the type of exposure apparatus EX is not limited to an exposure apparatus for manufacturing a liquid crystal display device, and can be widely applied to semiconductor device manufacturing for exposing a semiconductor device pattern on a substrate 54 201040673 Ρ Exposure device for manufacturing thin film magnetic heads, photographic elements (CCD), micromachines, microelectromechanical systems (MEMS), deoxyribonucleic acid (DNA) wafers (Chip) ) or an exposure device such as a mask or a mask.

Further, in each of the above embodiments, the position information of each platform is measured using an interferometer system including a laser interferometer. However, the present invention is not limited thereto, and for example, a scale set on each platform may be used ( Sede) (diffraction light) The encoder (enc〇der) system for detection. Further, in the above embodiment, a light-transmitting type mask in which a predetermined light-shielding pattern (or a phase pattern or a matte pattern) is formed on a transparent substrate is used, but instead of the mask, for example, the United States may be used. A variable shaped mask (also referred to as an electronic mask, active mask) that transmits a pattern or a reflective pattern or an illuminating pattern is formed according to the electronic material of the pattern to be exposed, as disclosed in the specification of Japanese Patent No. 6778257. Or image generator (image gene〇〇r)). Further, a pattern forming device including a self-luminous image display device may be provided instead of a variable-shaped mask having a non-light-emitting image display device. In the exposure apparatus EX of the above-described embodiment, various sub-systems including the respective constituent elements of the present application and the range of the present invention are ensured by ensuring predetermined mechanical precision, electrical precision, and optical precision. , and made in a hurry. In order to ensure these various precisions, optical precision is achieved for various materials and secrets before and after the assembly, and adjustments for mechanical precision are performed for various mechanical systems, and various electrical functions are used for electrical purposes. Accuracy adjustment. The assembly steps set by various subsystems include mechanical connection of various subsystems, wiring connection of electric=circuit, and connection of pneumatic circuit. Before the assembly steps by the various = directional exposure devices, of course, there are also various assembly steps. In the assembly step of the various sub-pure-in-the-spots, it is necessary to make a reservation, and to ensure various precisions as the entire exposure device. Furthermore, it is more reasonable (4) that the exposure apparatus is manufactured in a clean room in which temperature and $cleanness are managed. As shown in FIG. 17, the micro components of the semiconductor element and the like are via the step, step 2〇2, step 2〇3, substrate processing step, element step (including dicing step, bonding (b〇nding). Step: a processing process such as a package step, 2〇5, and an inspection step 2〇6, etc., to manufacture 'the above-mentioned step 2〇1 to perform the Wei and performance design of the micro-component, and the above-described step 202 creates a mask based on the design step. a mask (photomask), in the above step 203, a substrate which is a substrate of the element is produced, and the substrate processing step 2〇4 includes a substrate processing (exposure processing). The substrate processing includes: using the pattern of the mask according to the above-described implementation, and using the pattern of the mask The light beam is exposed to expose the substrate, and the exposed substrate (sensitizer) is developed. Furthermore, the step 204 includes forming an exposure pattern layer (a layer of the developed sensitizer) corresponding to the pattern of the mask by developing the sensitizer, and processing the substrate through the exposure pattern layer. Further, the requirements of the above-described embodiments and modifications can be combined as appropriate. Moreover, some components are sometimes not used. Further, within the scope permitted by the statute, reference is made to the above-mentioned embodiments and modifications. 56 201040673 == == There is a disclosure of the publication and the paste, although the present invention has been disclosed in the preferred embodiment as above, but the invention 壬Those skilled in the art will be able to make some modifications and refinements without departing from the spirit and scope of the invention, and the scope of the present invention is defined by the scope of the appended claims. [Simple description of the diagram] Ο

Fig. 1 is a schematic configuration view showing an example of an exposure apparatus according to a first embodiment. Fig. 2 is a perspective view showing an example of an exposure apparatus according to the first embodiment. Fig. 3 is a view showing an example of a projection system and a substrate stage according to the first embodiment. Fig. 4 is a schematic diagram showing an example of a positional relationship between a projection area, a detection area, and a substrate in the first embodiment. Fig. 5 is a flowchart showing an example of an exposure method according to the first embodiment. (A) to (F) of Fig. 6 are views showing an example of the operation of the exposure apparatus according to the first embodiment. (A) to (F) of FIG. 7 are views showing an example of the operation of the exposure apparatus according to the first embodiment. (A) to (C) of FIG. 8 are diagrams showing an example of the operation of the exposure apparatus according to the first embodiment. Fig. 9 is a schematic view for explaining a relationship between a projection area and a detection area in the first embodiment. Fig. 10 is a schematic diagram showing an example of the positional relationship between the projection area and the detection area and the base 57 201040673 in the second embodiment. (A) to (F) of Fig. 11 are views showing an example of the operation of the exposure apparatus of the second embodiment. (A) to (F) of Fig. 12 are views showing an example of the operation of the exposure apparatus of the second embodiment. (A) to (D) of Fig. 13 are views showing an example of the operation of the exposure apparatus of the second embodiment. Fig. 14 is a schematic diagram showing an example of a positional relationship between a projection area, a detection area, and a substrate in the second embodiment. (A) to (D) of Fig. 15 are views showing an example of the operation of the exposure apparatus of the third embodiment. Fig. 16 is a view showing an example of the operation of the exposure apparatus of the fourth embodiment. Fig. 17 is a flow chart for explaining an example of a manufacturing procedure of a micro element. [Main component symbol description] 1 : Mask platform 2: Substrate platform 3, 4: Drive system 5: Control device 6: Interferometer system όΑ, 0B: Laser interferometer unit 7: First detection system 8: Second detection System 58 201040673 9: Alignment system 10: Base plate '10G: Guide surface 11: 1st cylinder 12: 2nd cylinder 12G: Guide surface 13: Main body 14: Platen Ο 17: Mercury lamp 43: Reference member 44: upper surface 45: transmissive portion 46: light receiving device • 47: lens system 48: photo sensor 91: first alignment system ^ 91A to 91F, 92A, 92B: detector 92: second alignment system 201 ~ 206, SP1, SP2, SP3: Step BL: Anti-vibration table EL: Exposure beam EX: Exposure device FL: Support surface G1: Group 1 59 201040673 G2: Group 2 G3: Group 3 G4: 4th Group G5: Group 5 G6: Group 6 IL1 to IL7: Lighting modules IR1 to IR7: Lighting area IS: Lighting system LA, LX1, LX2: Distance LJ: Minimum necessary walking distance Μ: Mask Ml~m6 : alignment mark P: substrates PA1 to PA6 : exposure areas PL1 to PL7 : projection optical systems PR1 to PR7 : projection area PS : projection systems SA1 to SA6, SB1, SB2 : detection area 6 0

Claims (1)

201040673 VII. Patent application scope: The device includes =, \ device, on the one hand, the substrate can be moved relative to the exposure beam and the scanning direction is moved, and the exposure beam is used to sequentially: Exposure, the exposure substrate flat opening ' can be in a stable state in the 帛1 position and the second positional speed state in the scanning direction, in the vicinity of the second position, and , f day: between the position of the ^ and the third position at a constant speed 11 to hold the substrate with respect to the above-mentioned region, and to move with respect to the scanning side; and the alignment is pure with respect to the upper viewing region On the other side of the scanning side 2, at least at a position separated from the first position by the distance between the first position and the second position, the above-mentioned first exposure target area adjacent to the plurality of exposure targets The alignment mark on the substrate configurable detection area 'the city alignment system derives the position of the above-mentioned first exposure target area. 2. The exposure apparatus according to claim 1, wherein the first position is a position at which the first exposure target region is disposed outside the illumination region. 3. The above-mentioned alignment mark on the substrate held by the substrate platform disposed in the above-mentioned i-th position of the exposure apparatus described in the above-mentioned item or the second item is disposed in the detection area. . 4. The exposure of the 201040673 optical device as described in any one of the above-mentioned claims, wherein the second position, and the position between the second position and the third position are at least - The end of the exposure target region is disposed at an exposure start position in at least a portion of the irradiation region. The exposure apparatus according to any one of claims 1 to 4, wherein the first exposure target area is moved to the side with respect to the scanning direction with respect to the irradiation area. Subject to exposure. 6. The exposure apparatus according to any one of the preceding claims, wherein the plurality of detection regions are disposed in a second direction substantially orthogonal to the scanning direction. 7. The exposure apparatus according to any one of the preceding claims, wherein the alignment system comprises the detection area being disposed on the side with respect to the scanning direction with respect to the scanning area. The first fresh system and the second alignment system disposed on the other side. 8. The exposure apparatus of claim 7, wherein: the result of detecting the gauge on the substrate and the second alignment according to the first alignment system The system detects the scale mark of the above-mentioned rule, and derives the position of the detection area of the first alignment and the detection area of the second alignment system. 9. The exposure apparatus of claim 7 The method includes: 62 201040673 processing the device, detecting the ❾ reference mark on the substrate platform according to the first alignment system, the result, and the second alignment pure pair: the check mark is detected _ result, and the first 1 is derived Detection of the god system - The above 苐2 is aligned with the positional relationship of the detection area of the system. The exposure apparatus according to any one of claims 7 to 9 wherein, in a, the first and second alignment systems are each in a second direction orthogonal to the scanning direction by substantially zero. There are a plurality of detection areas on the upper side, and the number of detection areas of the above-described second alignment system is smaller than the number of detection areas of the first alignment system. The exposure apparatus according to the invention, wherein the distance between the detection regions at both ends of the second alignment and the detection region of both ends of the second alignment system in the second direction is The distance from ' is about the same. 12. The exposure apparatus according to claim 5, wherein a position of a detection region at both ends of the first alignment system in the second direction and a detection region at both ends of the second alignment system The location is roughly the same. The exposure apparatus according to claim 5, wherein a position of a detection area of both ends of the first alignment system in the second direction and a position of a detection area of both ends of the second alignment system are provided. • Set to different. The exposure apparatus according to any one of claims 11 to 13, wherein the first alignment system and the second alignment system of the above-mentioned second alignment system use the detection areas of the respective ends, To detect the same alignment mark on the above substrate. A method of manufacturing a component, comprising: exposing the substrate coated with a sensitizer using an exposure device according to any one of claims 1 to 14; The photosensitive agent exposed by exposure of the substrate is developed to form an exposure pattern layer; and 16. an exposure method, wherein the substrate is processed by the exposure pattern layer to make the substrate relative to the exposure beam = In the scanning direction, the scanning direction is moved, and the plurality of exposure target areas of the substrate are sequentially exposed, and the method includes: a first exposure processing, which is on the one hand: Second: the above-mentioned exposure beam 'on the other hand, the processing of sequentially exposing a plurality of the above-mentioned exposure target areas; performing alignment processing 'This alignment processing is to perform the above-mentioned first i ΐ i ί: alignment mark configuration In the detection area of the alignment system, the second light is: the image is == where the illumination area is irradiated with the above exposure; and the light treatment and the above alignment processing are performed, and the above-mentioned 曝1 exposure area is entered. In the process of sequentially exposing, the exposure target of the first exposure target area in the plurality of exposure target areas is exposed to the exposure target of the first exposure target area. (2) The moving direction with respect to the scanning direction when the first exposure target region that is first exposed in the exposure process is exposed is the same. The exposure method according to claim 16, wherein in the first exposure processing, a plurality of the exposure target regions are sequentially exposed, and a movement trajectory of the substrate relative to the upper reflection region is performed. In the above-mentioned second exposure processing towel, the above-mentioned exposure to the recording field is sequentially exposed, and the above-mentioned photo-taking is relatively the same. [18] The exposure method according to Item 16, wherein the substrate has an acceleration shape of '4' between the i-th position and the second position in the scanning direction, and is closer to the second position. In a steady state, and in a constant speed state between the second position and the third position, the scanning direction is moved to one side, and the first position is that the first exposure target area is disposed in the illumination area. At least the position of the outer position, the second position, and the predetermined position between the second position and the third position is at least the portion of the irradiation region at the end of the first exposure pair (four) field (four) In the exposure start position, the detection area is disposed on the other side with respect to the scanning area with respect to the scanning direction, and at least the distance _(four) of the ith position and the second position is opposite to the first exposure target area. The alignment marks on the adjacent substrates are inspected. 65 201040673 19. Exposure as described in claim 18 of the patent application, after the detection of the alignment mark, the ith aspect is exposed to the scanning area with respect to the scanning area. The direction of the _ direction is shifted to the side 20. The plurality of substrates as described in claim 19 of the patent application are sequentially exposed, and the ninth side is removed, wherein the exposure method includes: A plate type 'the first alignment mode is a pair a plurality of patterns are detected, and a pattern of the position of each of the second base (four) position and the exposure target area on the substrate is derived; and the second alignment mode is for the plurality of The alignment marks on the basis of the _μ' plate are detected, and based on the detection result of the upper mark and the guide of the first alignment mode, the position of the second substrate and the second substrate = exposure The mode of the respective positions of the object regions, the image region f2 is aligned with the mode, and the first component is manufactured. The method includes: the exposure of any of the 16th to 20th patents. The J / , $ substrate coated with a sensitizer is exposed; % of the sensitizer exposed by the exposure of the substrate is introduced into the shirt to form an exposure pattern layer; and _ Ding Xian, the above exposure The thin layer is used to process the above substrate.