JP2001201867A - Exposure method, aligner and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure method and an aligner and also a device manufacturing method, by which exposure processing is accurately performed for a large-sized substrate, without making a device large-sized and causing increase in cost. SOLUTION: The aligner 1 is provided with a detector to detect the position of the boundary part of the projected image of a pattern projected on the substrate P, a mask stage 4 and a substrate stage 5 moving relatively synchronously with a projection optical system 3 and a controller to control each stage, so that the position of the projected image of the pattern projected and exposed next is set at a prescribed position, based on the detected result of the detector. Thus, positioning is performed accurately at the time of superimposing adjacent projection areas with each other, so that the pattern is formed accurately for a large-sized substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method, an exposure apparatus, and a device manufacturing method for projecting and exposing a peripheral portion of an image of a mask pattern illuminated with exposure light onto a substrate so as to overlap each other. It is.

[0002]

2. Description of the Related Art In recent years, a liquid crystal display panel has been frequently used as a display element of a personal computer or a television receiver. This liquid crystal display panel is manufactured by patterning a transparent thin film electrode into a desired shape on a glass substrate by a photolithography technique. As an apparatus for this lithography, a projection exposure apparatus for exposing an original pattern formed on a mask to a photoresist layer on a glass substrate via a projection optical system is used.

Meanwhile, the above liquid crystal display panel is required to have a large area for easy viewing of the screen, and accordingly, it is also desired to enlarge an exposure area (shot area) in a projection exposure apparatus. As means for enlarging the shot area, the mask stage holding the mask and the substrate stage holding the glass substrate are synchronously moved in a predetermined direction and scanned with respect to the projection optical system, thereby scanning the pattern formed on the mask. 2. Description of the Related Art There is a scanning exposure apparatus that sequentially transfers an image to an exposure area on a glass substrate.

As this scanning type exposure apparatus, for example, there is an apparatus that combines a plurality of projection optical systems and synchronously moves a mask and a glass substrate in a predetermined direction to scan the projection optical systems. At this time, the plurality of projection optical systems are arranged so that adjacent projection areas are displaced by a predetermined amount in the scanning direction, and ends of adjacent projection areas are overlapped with each other in a direction orthogonal to the scanning direction. . In this case, each projection optical system includes a field stop for shaping the projection area into a predetermined shape.For example, by making the field stop a trapezoidal shape, the total aperture width of the field stop in the scanning direction is always equal. It is set to become. Therefore, in the above-described scanning type exposure apparatus, the overlapping portion (joint portion) of the adjacent projection optical systems is exposed repeatedly, and at this time, the optical aberration and the exposure illuminance of the projection optical system change smoothly.

[0005]

In recent years, as a glass substrate for manufacturing a liquid crystal display panel, a liquid crystal display panel having a larger display area for improving the productivity by multi-paneling the liquid crystal panel and for a television has been proposed. In order to manufacture, it is considered to use a larger (for example, about 1 m square) glass substrate. At this time, in the scanning exposure apparatus having a plurality of projection optical systems, after performing the scanning exposure by synchronously moving the mask and the glass substrate, the mask and the substrate are step-moved in a direction orthogonal to the synchronous movement to change the pattern. A method of performing transfer by joining them together is considered.

However, when a projection area to be projected and exposed next on a glass substrate is projected adjacent to a projection area having a predetermined shape (trapezoidal shape) and a projection area to be projected and projected next is overlapped with the projection area, the projection areas adjacent to each other are conventionally compared with each other. There has been no effective means for positioning so as to overlap with high accuracy.

Further, the pattern formed on the glass substrate includes a pixel portion composed of a pattern in which a plurality of electrodes corresponding to a plurality of pixels are regularly arranged, a pattern of each electrode of the pixel portion, and a drive of each of these electrodes. And a conducting section for conducting the driving circuit. in this case,
The pixel portion is formed on each of the partial patterns joined by the glass substrate by the scanning exposure apparatus. However, in the above-mentioned scanning exposure apparatus, these contents are not taken into account, and the configuration is such that the pattern of the mask is simply divided and transferred onto the glass substrate. As a result, the size of the apparatus is increased and the cost is increased.

The present invention has been made in view of such circumstances, and an exposure method and an exposure method capable of accurately performing exposure processing on a large substrate without increasing the size and cost of the apparatus. It is an object to provide an apparatus and a device manufacturing method.

[0009]

In order to solve the above-mentioned problems, the present invention employs the following structure corresponding to FIGS. 1 to 13 shown in the embodiment. The exposure method of the present invention
In projecting and exposing the image of the pattern of the mask (M) illuminated with the exposure light onto the substrate (P) which moves synchronously with the mask (M) via the projection optical system (3), the substrate (P) is first exposed. )
In an exposure method in which a peripheral portion (58a) of an exposure area (53) of an image of a pattern projected and exposed above and an exposure area (54) to be projected and exposed next are overlapped with each other, projection is performed first. The positions of the boundaries (35a to 35h) of the projection areas (34a to 34e) of the projected image of the pattern to be exposed are detected, and the projection images (34a to 34a to The position of 34e) is adjusted.

According to the present invention, the positions of the boundary portions (35a to 35h) of the projection areas (34a to 34e) corresponding to the pattern overlapping portions (58a) are detected, and based on the detected results, Next, since the position of the projected image of the pattern to be projected and exposed is adjusted, adjacent projection areas (34a to 34a) are adjusted.
34e) Positioning can be performed with high accuracy when overlapping each other. Therefore, a pattern can be accurately formed on a large-sized substrate.

In this case, based on the detected result,
By adjusting the positions of the mask (M) and the substrate (P), the positions of the projected images (34a to 34e) can be adjusted, and, for example, the boundary portions (35a to 35h) can be accurately overlapped.

According to such an exposure method, an image of a pattern of a mask (M) illuminated with exposure light is projected onto a substrate (P) synchronously moved with the mask (M) via a projection optical system (3). At the time of exposure, the peripheral portions of the exposure region (53) of the image of the pattern projected and exposed on the substrate (P) and the exposure region (54) to be projected and exposed next are overlapped. The position detecting device (4) for detecting the position of the boundary (35a to 35h) of the projection area (34a to 34e) of the projected image of the pattern to be projected and exposed.
1) and a moving device (37, which synchronously moves the mask (M) and the substrate (P) relative to the projection optical system (3).
40) a control system (17) for controlling the moving device (37, 40) based on the detection result so that the position of the projected image (34a to 34e) of the pattern to be projected and exposed next becomes a predetermined position. The exposure can be performed by an exposure apparatus (1) characterized by comprising:

Alternatively, based on the detected result,
Boundaries (35a-35) of projection areas (34a-34e)
It is also possible to change the position of h), for example, it is possible to accurately overlap the boundary portions (35a to 35h) with a desired state.

As the position detecting device (41), it is possible to use a light detecting device (41) for detecting information relating to the amount of exposure light in the projection regions (34a to 34e). (34a-34h)
Of the boundary portions (35a to 35h) can be detected. Note that the information on the amount of exposure light includes the amount of exposure light illuminated per unit area on the object surface, or the amount of exposure light emitted per unit time.

Then, the overlapping portion of the pattern (58
a, 58b) and portions other than the overlapping portion (53, 54, 5)
By making adjustments so that the exposure amounts of the exposure light and the exposure light of the item 5) substantially coincide with each other, a uniform pattern can be formed on a large substrate.

The projection optical system (3) is composed of a plurality of optical systems (3a to 3e) arranged in a direction perpendicular to the synchronous movement direction, and has a boundary portion (34a to 34e) of a detected projection image. 35a to 35h), a predetermined optical system (3a to 3e) of the plurality of optical systems (3a to 3e) according to the position.
By shielding the optical path of (1), a uniform pattern can be formed on the large substrate (P) without using the large mask (M). Therefore, it is possible to prevent an increase in the size and cost of the device.

The moving device (37) is capable of moving the mask (M) by a predetermined distance in a direction orthogonal to the synchronous moving direction, and moves the mask (M) in the synchronous moving direction at the time of exposure. By moving a predetermined distance in the direction perpendicular to the direction, it is possible to arbitrarily set the area of the pattern to be formed on the substrate (P). At this time, the predetermined distance is formed on the substrate (P) by making it at least １ ／ or more of the projection area (34a to 34e) in one optical system in the direction orthogonal to the synchronous movement direction. The pattern to be formed can be variously set, for example, the pattern area can be expanded by the size of one projection area (34a to 34e).

According to the device manufacturing method of the present invention, a substrate (P) which synchronously moves an image of a pattern of a mask (M) illuminated with exposure light with the mask (M) via a projection optical system (3).
At the time of the projection exposure on the upper side, the peripheral portion (58) of the exposure region (53) of the image of the pattern previously projected and exposed on the substrate (P) is adjacent to the exposure region (54) for the next projection exposure.
a) In the device manufacturing method including an exposure step in which the patterns are overlapped with each other, the exposure step includes a projection region (34a to 34a) of a projection image of a pattern to be projected and exposed first.
The position of the boundary part (35a to 35h) of e) is detected, and the position of the projected image (34a to 34e) of the pattern to be projected and exposed next is adjusted based on the detection result.

According to the present invention, the positions of the boundary portions (35a to 35h) of the projection areas (34a to 34e) corresponding to the pattern overlapping portions (58a) are detected, and based on the detected results, Next, since the position of the projected image of the pattern to be projected and exposed is adjusted, adjacent projection areas (34a to 34a) are adjusted.
34e) Positioning can be performed with high accuracy when overlapping each other. Therefore, a device having a large pattern with high accuracy can be manufactured.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an exposure method, an exposure apparatus, and a device manufacturing method according to an embodiment of the present invention will be described with reference to the drawings. 1 and 2 are views showing an exposure apparatus of the present invention, of which FIG. 1 is a schematic perspective view and FIG.
Is a block diagram.

In these figures, an exposure apparatus 1 includes an illumination optical system 2 having a plurality of illumination system modules 10 (10a to 10e) for illuminating a light beam (exposure light) from a light source 6 onto a mask M, and a mask M. And a plurality of mask stages 4 that are arranged corresponding to the illumination system modules 10 (10a to 10e) and transfer the image of the pattern of the mask M illuminated by the exposure light onto the glass substrate (substrate) P. The projector includes a projection optical system 3 (3a to 3e) and a substrate stage 5 for holding a glass substrate P.

In FIG. 1, the direction of the optical axis of the projection optical system 3 is the Z direction, the direction perpendicular to the Z direction is the synchronous movement direction (scanning direction) of the mask M and the glass substrate P, and the Z direction. And a direction (non-scanning direction) orthogonal to the X direction is defined as a Y direction.

The illumination optical system 2 includes a light source 6 such as an ultrahigh pressure mercury lamp, an elliptical mirror 6a for condensing a light beam emitted from the light source 6, and a light beam condensed by the elliptical mirror 6a for exposure. A dichroic mirror 7 that reflects a light beam of a required wavelength and transmits a light beam of another wavelength, and a wavelength required for further exposure among light beams reflected by the dichroic mirror 7 (usually, g, h, and i rays, A wavelength selection filter 8 that passes only at least one band) and a plurality of light beams (five in this embodiment) from the wavelength selection filter 8
And a light guide 9 that is incident on each of the illumination system modules 10 a to 10 e via the reflection mirror 11.

A plurality of illumination system modules 10 (five in this embodiment, 10a to 10e) are arranged (however, in FIG. 2, only those corresponding to the illumination system module 10a are shown for convenience). Lighting module 10
Exposure light emitted from each of a to e is a mask M
Each of the above different small areas (illumination areas) is illuminated.

Each of the illumination system modules 10 a to 10 e includes an illumination shutter 12, a relay lens 13, a fly-eye lens 14, and a condenser lens 15. In this embodiment, the illumination system module 10
The illumination system modules 10b to 10e having the same configuration as that of FIG.
They are arranged with a certain interval between the direction and the Y direction.
Light beams from the respective illumination system modules 10a to 10e irradiate different illumination areas on the mask M.

The illumination shutter 12 is disposed behind the light guide 9 so as to be able to advance and retreat with respect to the optical path of the light beam.
The illumination shutter 12 blocks light from the light path when the light path is blocked, and releases light from the light path when the light path is released. The illumination shutter 12 is provided with a shutter drive unit 16 that moves the illumination shutter 12 forward and backward with respect to the optical path of the light beam. The drive of the shutter drive unit 16 is controlled by the control device 17.

On the other hand, each of the illumination system modules 10a to 10e
Is provided with a light amount adjusting mechanism 18. The light amount adjusting mechanism 18 adjusts the exposure amount of each optical path by setting the illuminance of the light flux for each optical path. The light amount adjusting mechanism 18 includes a half mirror 19, a detector 20, a filter 21, a filter driving unit 22, It has. Half mirror 19
Is arranged in the optical path between the filter 21 and the relay lens 13 and allows a part of the light flux transmitted through the filter 21 to enter the detector 20. Each of the detectors 20 always detects the illuminance of the incident light beam independently and outputs a detected illuminance signal to the control device 17.

As shown in FIG. 3, the filter 21 is formed by patterning a glass plate 21a in a barb shape with Cr or the like, and the transmittance gradually changes linearly in a certain range along the Y direction. It is arranged between the illumination shutter 12 and the half mirror 19 in each optical path. The half mirror 19, the detector 20, and the filter 21 are provided for each of a plurality of optical paths. The filter driving unit 22 moves the filter 21 along the Y direction based on an instruction from the control device 17.

When the filter 17 is driven by the filter driving section 22, the light amount for each optical path is adjusted.

The light beam transmitted through the light amount adjusting mechanism 18 reaches the fly-eye lens 14 via the relay lens 13.
A secondary light source is formed on the exit surface side of the fly-eye lens 14 so that the illumination area of the mask M can be irradiated with uniform illuminance via the condenser lens 15.

On the mask M held by the mask stage 4, a pattern to be transferred to the glass substrate P is formed. Then, each of the illumination system modules 10a to 10a
The different areas (illumination areas) of the mask M are illuminated by the respective exposure lights transmitted through e.

The light beam transmitted through the mask M is transmitted to the projection optical system 3.
(3a to 3e). This projection optical system 3
Are used to form an image of a pattern present in the illumination range of the mask M on the glass substrate P and project and expose the image of the pattern on a specific region of the glass substrate P. Each of the illumination system modules 10a to 10e It is arranged corresponding to.

At this time, the projection optical systems 3a, 3c, 3e and the projection optical systems 3b, 3d are arranged in two rows in a staggered manner. That is, the projection optical systems 3 arranged in a staggered manner
Reference numerals a to 3e are arranged such that adjacent projection optical systems (for example, the projection optical systems 3a and 3b, 3b and 3c) are displaced by a predetermined amount in the X direction. Each of these projection optical systems 3a to 3e transmits a plurality of exposure lights emitted from the illumination system modules 10a to 10e and transmitted through the mask M, and the pattern formed on the mask M on the glass substrate P held on the substrate stage 5. Is projected. That is, the exposure light transmitted through each of the projection optical systems 3a to 3e forms an image of a pattern corresponding to the illumination area of the mask M on a different projection area on the glass substrate P.

Then, the pattern of the mask M in the illumination area is transferred onto the glass substrate P on which a resist is applied, with predetermined image forming characteristics. Each projection system module 3a-
3e, as shown in FIG. 4, includes an image shift mechanism 23, two sets of catadioptric optical systems 24 and 25, a field stop 26, and a magnification adjustment mechanism 27.

The light beam transmitted through the mask M enters the image shift mechanism 23. The image shift mechanism 23 shifts the image of the pattern of the mask M in the X direction or the Y direction, for example, by rotating two parallel flat glass plates around the Y axis or the X axis. The light beam transmitted through the image shift mechanism 23 is transmitted to the first set of the catadioptric optical system 24.
Incident on.

The catadioptric optical system 24 forms an intermediate image of the pattern of the mask M,
8, a lens 29 and a concave mirror 30. The right-angle prism 28 is rotatable around the Z-axis, and rotates the image of the pattern of the mask M.

At this intermediate image position, a field stop 26 is arranged. The field stop 26 sets an image field (projection area) on the glass substrate P. The light beam transmitted through the field stop 26 enters the second set of catadioptric optical system 25. The catadioptric optical system 25 includes, similarly to the catadioptric optical system 24, a right-angle prism 31 and a lens 32.
And a concave mirror 33. The right angle prism 31
Are also rotatable around the Z-axis, so that the image of the pattern of the mask M is rotated.

The luminous flux emitted from the catadioptric optical system 25 passes through the magnification adjusting mechanism 27 and forms an image of the pattern of the mask M on the glass substrate P at the same erect magnification. The magnification adjusting mechanism 27 is composed of, for example, three lenses of a plano-convex lens, a biconvex lens, and a plano-convex lens, and moves the biconvex lens located between the plano-convex lens and the plano-concave lens in the Z-axis direction, thereby forming a mask M. The magnification of the image of the pattern is changed.

FIG. 5 shows an image field (projection area) 34 of the projection system modules 3a to 3e on the glass substrate P.
It is a top view of a-34e. Each image field 34
a to 34e are set to a predetermined shape by the field stop 26, and have a trapezoidal shape in the present embodiment. Image fields 34a, 34c,
The image field 34e and the image fields 34b and 34d are arranged to face each other in the X direction. Further, the image fields 34a to 34e are formed between the ends (boundaries) of adjacent image fields (35a and 35b, 35c and 35c).
d, 35e and 35f, and 35g and 35h) are arranged in parallel so as to overlap in the Y direction, as indicated by a two-dot chain line,
The total width of the image fields in the X direction is set to be substantially equal. That is, the exposure amounts when scanning exposure is performed in the X direction are equalized.

As described above, each of the projection system modules 3a-3
By providing the overlapping portions (joining portions) 36a to 36d on which the image fields 34a to 34e by e are overlapped, it becomes possible to smoothly change the optical aberration and the illuminance at the joining portions 36a to 36d. I have. Note that the image field 34 of this embodiment is
The shapes of a to 34e are trapezoids, but may be hexagons, rhombuses, or parallelograms.

The mask stage 4 holds the mask M, and has a long stroke in the X direction for performing one-dimensional scanning exposure and a predetermined distance in the Y direction orthogonal to the scanning direction. I have. As shown in FIG. 2, the mask stage 4 is provided with a mask stage driving section 37 for driving the mask stage 4 in the XY directions. The mask stage driving section 37 is controlled by the control device 17. In this case, the mask stage driving section 37 sets the movement distance (predetermined distance) of the mask stage in the Y direction to the projection area 34a in one projection system module 3a (up to 3e) in a direction orthogonal to the synchronous movement direction. (〜34e) is set to at least 1/2 or more.

As shown in FIG. 1, movable mirrors 38a and 38b are provided at the edges on the mask stage 4 in orthogonal directions. A laser interferometer 39a is arranged to face the movable mirror 38a. In addition, the moving mirror 38
b, a laser interferometer 39b is arranged to face.

These laser interferometers 39a and 39b
The laser beam is emitted to the movable mirrors 38a and 38b, respectively, and the distance between the movable mirrors 38a and 38b is measured, so that the position of the mask stage 4 in the X and Y directions, that is, the position of the mask M The position can be detected with high resolution and high accuracy. The detection results of the laser interferometers 39a and 39b are output to the control device 17.

The control device 17 includes a laser interferometer 39a,
By monitoring the position of the mask stage 4 from the output of 39b and controlling the mask stage driving unit 37, the mask stage 4 can be moved to a desired position.

The substrate stage 5 holds the glass substrate P. Like the mask stage 4, the substrate stage 5 has a long stroke in the X direction for performing one-dimensional scanning exposure and a step in the Y direction orthogonal to the scanning direction. With a long stroke to move. Further, the substrate stage 5 is provided with a substrate stage drive section 40 for driving the substrate stage 5 in the XY directions. The substrate stage driving section 40 is controlled by the control device 17.

Further, the substrate stage 5 is also movable in the Z direction. The substrate stage 5 is provided with detection means (not shown) for detecting the position in the Z direction between the pattern surface of the mask M and the exposure surface of the glass substrate P. Are always controlled to have a predetermined interval. The detection means is constituted by, for example, a multi-point focus position detection system which is one of the oblique incidence type focus detection systems, and the detection value, that is, the position information of the glass substrate P in the Z direction is output to the control device 17. You.

On the substrate stage 5, a detector (photodetector) 41 is disposed at a height substantially equal to the exposure surface of the glass substrate P. The detector 41 detects information on the amount of exposure light on the glass substrate P, and outputs a detected detection signal to the control device 17.

In this case, the information on the amount of exposure light includes the amount of exposure light illuminated per unit area on the object surface (illuminance) or the amount of exposure light emitted per unit time. . In the present embodiment, information on the amount of exposure light will be described as illuminance.

The detector 41 is an illuminance sensor for measuring the amount of exposure light irradiation at a position corresponding to each of the projection optical systems 3a to 3e on the glass substrate P, and is constituted by a CCD sensor. The detector 41 is a substrate stage 5
By a guide shaft (not shown) arranged in the Y direction above,
It is installed at the same height as the glass substrate P, and is provided so as to be movable in a direction (Y direction) orthogonal to the scanning direction (X direction) by a detector driving unit.

Prior to one or more exposures, the detector 41 moves each of the images corresponding to the projection optical systems 3a to 3e by moving the substrate stage 5 in the X direction and by moving the illuminance sensor driving unit in the Y direction. Scanning is performed under fields (projection areas) 34a to 34e. Therefore, the information relating to the amount of exposure light at the image fields 34a to 34e on the glass substrate P and at the boundaries 35a to 35h of the image fields 34a to 34e is two-dimensionally detected by the detector 41. . Information on the amount of exposure light detected by the detector 41 is sent to the control device 17.

At this time, the control device 17 controls the substrate stage drive section 40 and the detector drive section based on the respective drive amounts.
The position of the detector 41 can be detected.

The movable mirrors 42a and 42b are respectively provided at the edges on the substrate stage 5 in the orthogonal direction.
A laser interferometer 43a is arranged to face the movable mirror 42a. Further, a laser interferometer 43b is arranged to face the movable mirror 42b.

These laser interferometers 43a and 43b
By emitting a laser beam to each of the movable mirrors 42a and 42b and measuring the distance between the movable mirrors 42a and 42b, the position of the substrate stage 5 in the X and Y directions,
That is, the position of the glass substrate P can be detected with high resolution and high accuracy. Then, the detection results of the laser interferometers 43a and 43b are output to the control device 17.

The control device 17 includes a laser interferometer 43a,
The position of the substrate stage 5 is monitored from the output of the detection means (multipoint focus position detection system) 43b and the substrate stage 5 is controlled by controlling the substrate stage driving unit 40.
Can be moved to a desired position.

As described above, the control device 17 can independently control the mask stage driving section 37 and the substrate stage driving section 40, respectively. Therefore, the mask stage 4 and the substrate stage 5 can be controlled independently. It is movable.

On the other hand, the control device 17 controls the mask stage 4
By controlling both the driving units 37 and 40 while monitoring the position of the substrate stage 5, the mask M and the glass substrate P can be moved at an arbitrary scanning speed (synchronous moving speed) with respect to the projection optical systems 3a to 3e. To move synchronously in the X direction.

As shown in FIG. 6, in the pattern area of the mask M, a pixel pattern 44 and peripheral circuit patterns 45a and 45b located at both ends in the Y direction of the pixel pattern 44 are provided.
Are formed. In the pixel pattern 44, a pattern in which a plurality of electrodes corresponding to a plurality of pixels are regularly arranged is formed. Peripheral circuit patterns 45a, 45
In b, a driver circuit and the like for driving the electrodes of the pixel pattern 44 are formed.

Each of the image fields 34a to 34a
4e is set to a predetermined size. In this case, FIG.
, The length of the long side is L1, the length of the short side is L2,
The interval between adjacent image fields (the pitch in the Y direction of the image fields) is set to L3.

Further, the peripheral circuit patterns 45a and 45b of the mask M shown in FIG. 6 are formed in the same dimensions and the same shape as the peripheral circuit patterns 51a and 51b of the glass substrate P, respectively, and the projection system modules 3a and 3e on both ends outside. Is arranged on the mask M so as to be exposed. The pixel pattern 44 of the mask M has the same length in the X direction and a different length in the Y direction than the pixel pattern 50 of the glass substrate P.

Here, in the pixel pattern 44 of the mask M, the length in the Y direction is L9, and the projection optical system
a, the length in the Y direction exposed only in 3e is L1
0 and L11.

Next, the exposure apparatus 1 having the above configuration
The operation of exposing the pattern of the mask M on the glass substrate P will be described with reference to FIGS. In the following, it is assumed that the movement of the mask stage 4 and the substrate stage 5 are all performed under the control of the control device 17 via the mask stage driving unit 37 and the substrate stage driving unit 40.

Here, as shown in FIG. 7, the entire exposure pattern on the glass substrate P is set to a length L1 in the Y direction.
Pattern (exposure region) 53 including the peripheral circuit pattern 51 a and a part of the pixel pattern 50.
A division pattern 54 having a length L13 in the Y direction and part of the pixel pattern 50; and a division pattern 55 having a length L14 in the Y direction and including a part of the peripheral circuit pattern 51b and the pixel pattern 50. It is assumed that scanning exposure is performed three times in total.

Here, the length L12 is defined by the + Y direction end point of the short side of the image field 34a and the image field 3
This is the distance in the Y direction between the long side of 4d and the end point in the −Y direction. The length L13 is the distance in the Y direction between the + Y direction end point of the long side of the image field 34b and the −Y direction end point of the long side of the image field 34c. The length L14 is the distance in the Y direction between the + Y direction end point of the long side of the image field 34b and the −Y direction end point of the short side of the image field 34e.

The division pattern 53 and the division pattern 5
4 is overlapped at an overlapping portion (joint portion) 58a,
The division pattern 54 and the division pattern 55
b. In addition, joints 58a, 5
8b is a joint 3 of the image fields 34a to 34e.
6a to 36b are overlapped at the same distance.

Prior to exposure, each image field 34
The positions of a to 34e and the boundaries 35a to 35h are detected. First, the division pattern 53 (the part of length L12)
An exposure operation is started for an area corresponding to (step S1). Specifically, first, the control device 17 issues an instruction to the filter driving unit 22 and moves the filter 21 so that the light flux from the light source 6 passes through the filter 21 at the maximum transmittance. When the filter 21 moves, the light source 6 moves the elliptical mirror 6a.
A light beam is irradiated via the. The irradiated light beam passes through the filter 21, the half mirror 19, the mask M, the projection system modules 3a to 3e, and the like, and then reaches the substrate stage 5. At this time, the mask M is moved so that a pattern or the like is not formed in the illumination area, or the mask M is removed.

At the same time, the detector 41 is moved in the X and Y directions within the area corresponding to the divided pattern 53, and is scanned by the image fields 34a to 34e corresponding to the projection optical systems 3a to 3e. Depending on the detector 41 to be scanned, each image field 34a-34
The illuminance at e and the illuminances Wa to Wh at the boundary portions 35a to 35h are sequentially measured (step S2).

The detection signal of the detector 41 is transmitted to the controller 1
7 is output. The control device 17 performs image processing based on the detection signal from the detector 41, and detects the shape and the illuminance of each of the image fields 34a to 34e and the boundaries 35a to 35h. Then, the control device 17 stores the illuminances Wa to Wh of the boundary portions 35a to 35h.

Next, the illuminance Wa-Wh of the boundary portions 35a-35h measured by the detector 41 in step S2.
, The illuminances Wa to Wh are substantially predetermined values, and (| Wa-Wb |, | Wc-Wd |, | We-Wf |)
The filter 21 is driven for each of the illumination system modules 10a to 10e while measuring the illuminance by the detector 41 so that is minimized (Step S3). Thereby, the light amount of the light beam for each optical path is corrected.

At this time, a part of the light beam emitted from the light source 6 is partially reflected by the half mirror 19 to the detector 2.
The detector 20 measures the illuminance of the incident light flux, and outputs a detected illuminance signal to the control device 17. Therefore, the control device 17 controls the filter driving unit 22 based on the illuminance of the light beam detected by the detector 20 so that the illuminance becomes a predetermined value,
The light quantity for each optical path may be adjusted.

The control device 17 has a detector 41 for scanning.
The position of each of the boundary portions 35a to 35h is obtained based on the information on the light amount of the exposure light detected by (Step S4). That is, the scanning detector 41
The control device 17 determines the shape of each of the boundary portions 35a to 35h with respect to the predetermined coordinate system based on the detection signal of
The positions of 5a to 35h are obtained. Specifically, among the triangular-shaped boundary portions 35a to 35h, predetermined representative positions such as a tip position and a centroid position are obtained.

At this time, the position of the detector 41 can be obtained based on the drive amount of each drive unit with respect to the reference position. That is, the initial position (standby position) of the detector 41 and the like can be set as a reference position, and the position of the detector 41 to be scanned with respect to this reference position can be obtained. The control device 17 obtains the position of each of the boundaries 35a to 35h with respect to the reference position based on the position of the detector 41 with respect to the reference position.

Then, the control device 17 controls the boundary portions 35a to 35a.
The position of 35h with respect to the predetermined coordinate system is stored. At this time, the relative positions of the image fields 34a to 34e (boundaries 35a to 35h) are also stored.

Each boundary 35a-35h with respect to the reference position
And the relative position of each of the boundaries 35a to 35h are determined, the glass substrate P is exposed. First, a portion corresponding to the divided pattern 53 (the portion having the length L12) is exposed. In this case, the illumination shutter 12 of the illumination system module 10e corresponding to the projection optical system 3e.
Is inserted into the optical path via the shutter driving unit 16 and FIG.
As shown in (5), the illumination light in the optical path corresponding to the image field 34e is shielded. At this time, the lighting system module 1
The illumination shutters 12a to 10d open each optical path. Thus, an illumination area having a length L12 in the Y direction including the peripheral circuit 45a and a part of the pixel pattern 44 is set on the mask M (step S5).

Next, the first scanning exposure is performed by synchronously moving the mask M and the glass substrate P in the X direction. Thereby, as shown in FIG. 7, the divided pattern 53 corresponding to the illumination area set by the projection optical systems 3a, 3b, 3c, and 3d is exposed on the glass substrate P (step S6).

Next, in order to perform the second scanning exposure, alignment with respect to a predetermined position of the substrate stage 5 is performed (step 7). Specifically, the substrate stage 5 is moved by a predetermined distance PS1 step in the + Y direction, and the position of the substrate stage 5 is finely adjusted. This distance PS1 is set based on the positions of the boundaries 35a to 35h obtained in step S4. That is, as shown in FIG.
To form the image fields 34a, 34
In the state where the illumination light in the optical path for the light beams d and 34e is shielded, the image field 34d at the time of the first scanning exposure is used.
Is set to overlap the boundary 35g of the image field 34b at the time of the second scanning exposure. Therefore, the substrate stage 5 is moved in the + Y direction so that the boundary 35b projected and exposed in the second scanning exposure is superimposed on the position of the boundary 35g projected and exposed in the first scanning exposure, and the position is finely adjusted. adjust.

The movement of the substrate stage 5 is performed based on the determined positions of the boundaries 35a to 35h. That is, the position of the boundary 35g with respect to the reference position projected and exposed in the first scanning exposure has been obtained.
The position of the substrate stage 5 may be set so that the boundary portion 35b to be projected and exposed next is superimposed on 5g. Since the position of the boundary 35b is also determined with respect to the reference position, the boundary 35g at the time of the first scanning exposure is used.
And the boundary portion 35b at the time of the second scanning exposure are overlapped with high accuracy.

At this time, the overlapping portion of the pattern (joint portion 58a) and the portion other than the overlapping portion (divided pattern 5
The position of the substrate stage 5 is adjusted so that the irradiation amounts of the respective exposure lights of (3, 54) substantially coincide with each other. That is, each of the image fields 34a to 34e (boundary portion 35)
a to 35h) are previously measured and adjusted in steps S2 and S3, and the control device 17 stores the stored image fields 34
Fine adjustment of the position of the substrate stage 5 based on the shapes or illuminance distributions of the a to e (boundary portions 35a to 35h) so that the illuminances of the overlapped portions of the patterns and the portions other than the overlapped portions substantially match. Do. More specifically, in the illuminance distribution as shown in FIG.
As shown in (a), the total irradiation amount of the exposure light at the overlapping portion between the boundary portions 35 (that is, the joint portion 36) is:
When the irradiation amount of the exposure light is lower than that of the overlapping portion, the position of the substrate stage 5 is adjusted to increase the overlapping range, and as shown in FIG. The amounts are substantially matched (step S8).

Alternatively, the filter driving unit 21 is driven so that the irradiation amount of the exposure light in the overlapped portion substantially coincides with the irradiation amount of the exposure light other than the overlapped portion. May be adjusted. This makes it possible to correct the light amount of the light beam in each optical path.

Next, at the pattern joint portion 58a on the glass substrate P, the pixel pattern 50 is continued so that
The mask stage 4 is shifted by a predetermined distance in the Y direction based on the size of the pitch of the pixel pattern 50.

Then, in order to expose the divided pattern 54 (length L13) which is the second scanning exposure area,
The illumination shutters 12 of the illumination system modules 10a, 10d, and 10e corresponding to the projection optical systems 3a, 3d, and 3e are inserted into the optical path via the shutter driving unit 16, and the illumination light in the optical path for the image fields 34a, 34d, and 34e. Are shielded from light. (At this time, the illumination system module 10
b, 10c, the illumination shutter 12 opens each optical path). Thereby, an illumination area having a length L13 in the Y direction including a part of the pixel pattern 44 is set in the mask M (step S9).

Then, the mask M and the glass substrate P are synchronously moved in the X direction, and the second scanning exposure is performed using the projection optical systems 3b and 3c (step S10). This allows
As shown in FIG. 7, a projection optical system 3 is provided on a glass substrate P.
The divided pattern 54 corresponding to the illumination area set in the image fields 34b and 34c of the joints 5b and 3c
At 8a, exposure is performed in a state of overlapping with the divided pattern 53.

Next, in order to perform the third scanning exposure, the substrate stage 5 is aligned with a predetermined position (step 11). Specifically, the substrate stage 5 is moved in the + Y direction by a predetermined distance PS.
In addition to the two-step movement, fine adjustment of the position of the substrate stage 5 is performed. This distance PS2 is set based on the positions of the boundaries 35a to 35h obtained in step S4. That is, as shown in FIG. 7, in order to form the joint portion 58b, in a state where the illumination light on the optical path to the image field 34a is shielded, the boundary portion 35e of the image field 34c at the time of the second scanning exposure is Boundary part 35b of image field 34b at the time of the second scanning exposure
And are set to overlap. Therefore, the substrate stage 5 is moved in the + Y direction so that the boundary 35b projected and exposed in the third scanning exposure is superimposed on the position of the boundary 35e projected and exposed in the second scanning exposure, and the position is finely adjusted. adjust.

The movement of the substrate stage 5 is performed based on the determined positions of the boundaries 35a to 35h. That is, the position of the boundary portion 35e with respect to the reference position projected and exposed in the second scanning exposure is obtained, and
The position of the substrate stage 5 may be set such that the boundary portion 35b to be projected and exposed next is superimposed on 5e. Since the position of the boundary 35b is also determined with respect to the reference position, the boundary 35e at the time of the second scanning exposure is used.
And the boundary portion 35b at the time of the third scanning exposure are superposed with high accuracy.

At this time, the overlapping portion of the pattern (joint portion 58b) and the portion other than the overlapping portion (divided pattern 5
4 and 55), the position of the substrate stage 5 is adjusted so that the irradiation amounts of the respective exposure lights substantially coincide with each other as shown in FIG. That is, each image field 34a-
The shape and illuminance distribution of each of the boundary portions 34e (boundaries 35a to 35h) are measured and adjusted in advance in steps S2 and S3, and the control device 17 determines based on the stored shape or illuminance distribution of each of the image fields 34a to 34e. Then, the position of the substrate stage 5 is finely adjusted so that the illuminances of the overlapped portion of the pattern and those other than the overlapped portion substantially match (step 12).

Alternatively, in this case as well, the filter driving section 21 is driven so that the irradiation amount of the exposure light in the overlapped portion and the irradiation amount of the exposure light in the portions other than the overlapped portion substantially coincide with each other.
The irradiation amount of the exposure light at each boundary may be adjusted. This makes it possible to correct the light amount of the light beam in each optical path.

Next, at the pattern joint portion 58b on the glass substrate P, the pixel pattern 50 is continuous.
The mask stage 4 is shifted by a predetermined distance in the Y direction based on the size of the pitch of the pixel pattern 50.

Then, in order to expose the divided pattern 55 (portion of length L14), which is the third scanning exposure area,
The illumination shutter 12 of the illumination system module 10a corresponding to the projection optical system 3a is inserted into the optical path via the shutter drive unit 16, and blocks the illumination light in the optical path for the image field 34a. (At this time, the illumination shutters 12 of the illumination system modules 10b, 10c, 10d, and 10e
Open each optical path). As a result, the mask M
An illumination area including a part of the pixel pattern 44 and having a length L14 in the Y direction is set (step S13).

Then, the mask M and the glass substrate P are synchronously moved in the X direction to perform the third scanning exposure (step S).
14). As a result, as shown in FIG.
On the upper side, a division pattern 55 corresponding to the illumination area set by the image fields 34b, 34c, 34d, and 34e of the projection optical systems 3b, 3c, 3d, and 3e is provided.
In b, the exposure is performed in a state of overlapping with the division pattern 54.

In this way, the joint exposure for the glass substrate P larger than the mask M is completed using one mask M (step 15).

As described above, for example, the position of the boundary 35g of the image field 34d corresponding to the joint 58a between the divided pattern 53 and the divided pattern 54 is detected, and the next projection exposure is performed based on the detected result. Since the position of the image field 34b to be adjusted is adjusted, the boundary portion 35g of the image field 34d projected by the first scanning exposure and the image field 34b projected by the second scanning exposure are used when the patterns are joined. The superposition with the boundary portion 35b is performed with high accuracy. At this time, stable alignment can be performed by adjusting the predetermined positions (centroid position and tip position) of the boundary portion 35g and the boundary portion 35b so as to match each other.

In this case, each image field 34a-
34e (boundaries 35a to 35h), the illuminance of the exposure light is detected, and the mask M and the substrate P
This is a configuration for adjusting the position, and the pattern can be connected with an existing configuration with high accuracy. At this time, by increasing or decreasing the overlap region between the boundary portions, as shown in FIG. 8, adjustment is easily performed so that the illuminances of the overlap portion and the portions other than the overlap portion substantially match. be able to.

The positions of the boundaries 35a to 35h can be changed based on the detection results of the positions of the boundaries 35a to 35h. That is, the field stop 26 is driven, and as shown in FIG.
4a to 34e), by changing the shape of the boundary 35 (35a to 35h), to adjust the amount and position of the overlapping portion between the boundary portions, and to control the amount of exposure light irradiation at the overlapping portion. Can be. In this case, FIG.
As shown in FIG. 11A, the peripheral portion of the boundary portion 35 can be moved in parallel, and as shown in FIG. 11B, it can be set by changing the tip angle of the boundary portion 35. It is.

The projection optical system 3 comprises a plurality of projection optical systems 3a to 3e arranged in a direction orthogonal to the synchronous movement direction, and image fields 34a to 34 of the detected projected images.
The light path of the predetermined optical system 3a to 3e among the plurality of optical systems 3a to 3e is shielded according to the positions of the boundary portions 35a to 35h of e, so that the illumination area can be easily adjusted for each scanning exposure. Can be. Then, when joining the divided patterns, a uniform pattern can be formed on a large substrate P without using a large mask M. Therefore, it is possible to prevent an increase in the size and cost of the device.

Further, in the present embodiment, without performing alignment using a conventional alignment system,
Pattern joining can be performed based on the detection results of the positions of the boundary portions 35a to 35h. On the other hand, after performing alignment using the alignment system, the boundary 3
The patterns can be joined based on the detection results of the positions 5a to 35h.

Further, in the present embodiment, the boundary portions 35a-35 where the image fields 34a-34e overlap.
Since the illuminance is measured and corrected so that the illuminance of h is substantially the same, the illuminance at the joints 36a to 36d and further at the joints 58a and 58b in the divided patterns 53, 54, and 55 is the same as the illuminance in other areas. Can be the same, pixel pattern 5
0 can be exposed with a uniform exposure amount, and the pattern line width can be made uniform over the front surface of the pattern. Therefore, the quality of the device after exposure is improved.

Then, the joints 58a, 5
8b, the positions of the boundaries 35a to 35h are detected,
Since the position of the projected image of the pattern to be projected and exposed next is adjusted based on the detected result, when overlapping the adjacent image fields 34a to 34e,
Positioning can be performed with high accuracy. Therefore, a device having a large pattern with high accuracy can be manufactured.

In the present embodiment, when the divided pattern 53 and the divided pattern 54 are joined, a boundary 35g of the image field 34d in the first scanning exposure and a boundary 35b of the image field 34b in the second scanning exposure. Are superimposed, but it is possible to superimpose the boundaries of arbitrary projection areas. Similarly, the same applies to the case where the boundary in the second scanning exposure and the boundary in the third scanning exposure are overlapped. Further, light blocking of the optical path by the illumination shutter 12 can be performed on an arbitrary optical path.

The timing of detecting the positions of the boundary portions 35a to 35h and adjusting the position of the projected image of the pattern to be projected and exposed next based on the detection result is performed at predetermined intervals. Alternatively, it may be performed for each predetermined production lot.

In this embodiment, one detector 41 is provided for detecting information on the amount of exposure light in the projection area, but a plurality of detectors whose positions with respect to the reference position are known in advance are provided. It is also possible. The illuminance Wa at each of the boundary portions 35a to 35h is determined by using the plurality of detectors.
To Wh can be simultaneously detected.
In this case, the illuminance of each of the image fields 34a to 34e and the boundaries 35a to 35h is measured, and the boundaries 35a to 35h are measured.
The position of h can be detected at high speed, and workability is improved.

In this embodiment, a plurality of parallel optical paths are provided at five locations, and the illumination system module 10
Although a configuration is provided in which the optical paths a to e and the projection optical systems 3a to 3e are provided, the configuration may be such that the optical path is one location and one illumination system module and one projection optical system are provided. That is,
The present invention can be applied to an exposure method and an exposure apparatus for joining projection regions having a boundary portion. On the other hand, the number of parallel optical paths is not limited to five, but may be, for example, four or six or more.

Further, the glass substrate P is subjected to three scanning exposures.
Although the configuration is described above in which the screen is synthesized, the present invention is not limited to this. For example, a configuration in which the screen is synthesized on the glass substrate P by four or more scanning exposures may be used.

Further, instead of providing one light source 6, one light source 6 is provided for each optical path, or a plurality of light sources are provided, and light beams from a plurality of light sources (or one light source) are combined into one using a light guide or the like. The light may be distributed to each optical path again. In this case, it is possible to eliminate the adverse effect due to the variation in the light amount of the light source, and even if one of the light sources disappears, only the overall light amount decreases, and it is possible to prevent the exposed device from becoming unusable. Further, when a plurality of light sources 6 are provided to combine and distribute light beams, the amount of exposure light to be irradiated can be adjusted to a desired amount by inserting a filter, such as an ND filter, for changing the amount of light transmitted through the optical path. It may be adjusted so that the exposure light dose in each of the image fields 34a to 34e is controlled.

Although the light path through the projection optical systems 3a to 3e is shielded by the illumination shutter 12, the invention is not limited to this. For example, the filter 21 is provided with a non-transmittable portion having a transmittance of zero, When light is shielded, a configuration may be employed in which an impenetrable portion is positioned in the optical path.

In the above embodiment, before the first scanning exposure, the positions of the boundaries 35a to 35h are detected.
Based on the detection result at this time, the image fields 34a to 34e and the boundaries 35a to 35h are aligned at the time of the second and third scanning exposures, but the first, second, and third times are performed. It is also possible to previously detect the position of each image field and boundary corresponding to the scanning exposure, store the detection result at this time, and sequentially perform the first to third scanning exposures collectively and sequentially. .

That is, first, with the mask M removed, exposure is performed on the divided pattern 53, and the positions of each image field and the boundary at this time are detected and stored in advance. Similarly, exposure is performed on the divided patterns 54 and 55 in advance, and the positions of each image field and the boundary in each divided pattern are detected and stored in advance. Then, the amount of movement of the substrate stage 5 is set based on the positional information stored for each of the divided patterns, and the divided patterns 53 to 55 are sequentially subjected to scanning exposure. In this case as well, the position adjustment is performed so that the irradiation amount of each exposure dose in the overlapped portion (joint portion) of each divided pattern and that in the portions other than the overlapped portion substantially match.

Further, if an optical path to be shielded is set in advance and a projection optical system to be used in a plurality of scanning exposures is set, all the boundary portions 35a to 35h are set.
It is not necessary to perform position detection with respect to, and it is also possible to perform position detection only on the boundary of any image field to be exposed.

By the way, the mask stage 4 is
Can be moved by a predetermined distance in a direction perpendicular to the scanning direction, and at the time of exposure, the mask M is moved by a predetermined distance in a direction (Y direction) perpendicular to the synchronous movement direction, so that the Can be set arbitrarily.

That is, as shown in FIG. 12, the distance that the mask stage 4 moves in the Y direction is changed by the image field 34a in one optical system 3a (up to 3e) in the Y direction.
(~ 34e) or more (1/3 of long side L1)
2 or more), the pattern to be formed can be variously set.

For example, as shown in FIG. 12A, using five projection optical systems 3 (image fields 34) and a mask M held on a mask stage 4, an exposure area having a distance LA in the Y direction is used. If you want to expose (in this case,
A peripheral circuit pattern and a pixel pattern are formed on the substrate). If the movable distance of the mask stage 4 in the Y direction is minute (for example, about 2 mm) as in the related art, FIG. As shown in (1), four projection optical systems must be used for the first exposure, and four projection optical systems must be used for the second exposure. On the other hand, as shown in FIG. 12C, at the time of the first scanning exposure, the mask stage 4 is moved in the + Y direction by a distance of の of the projection area, and then scanning exposure is performed (in this case, the length L10 Is set to be large), and at the time of the second scan exposure, the mask stage 4 is moved in the −Y direction by a distance of の of the projection area, and then the scan exposure is performed (in this case, the length L11). Is set to be large). In the first exposure, four projection optical systems are used, and in the second exposure, three projection optical systems are used, so that an exposure area having a distance LA in the Y direction can be obtained. Can be exposed. As described above, by moving the mask stage 4 in the Y direction by a distance of の of the projection area, it is not necessary to use one projection optical system. In other words, in other words, when the same number of projection optical systems are used, a wider range of exposure area can be exposed by moving the mask stage 4 a predetermined distance in the Y direction.

That is, as in the conventional case, the mask stage 4
Is small in the Y direction, four projection optical systems are used in the first exposure, and three projection optical systems are used in the second exposure.
When using the book projection optical system, the exposure area is as shown in FIG.
The exposure area becomes large as AR2 by moving the mask stage 4 in the + Y direction by half the distance of one projection area.
By moving each one-half distance of one projection area in the ± Y direction, the exposure area becomes even larger like AR3.

As described above, the mask stage 4 holding the mask M can be moved in a direction perpendicular to the scanning direction, for example, by half or more of one projection area. Further, a pixel pattern to be formed can be variously set, for example, a large pattern can be formed on a large glass substrate P.

In this case, in addition to the configuration in which the mask stage 4 can be moved in the Y direction, each field stop 2
A similar effect can also be obtained by moving 6 in the Y direction.

The exposure apparatus of the present embodiment can be applied to a proximity exposure apparatus that exposes a mask pattern by bringing a mask and a substrate into close contact without using a projection optical system.

The application of the exposure apparatus is not limited to a liquid crystal exposure apparatus for exposing a liquid crystal display element pattern on a square glass plate. For example, an exposure apparatus for exposing a circuit pattern on a semiconductor wafer may be used. The present invention can be widely applied to an apparatus and an exposure apparatus for manufacturing a thin film magnetic head.

The light source of the exposure apparatus of this embodiment is a g-line (4
36 nm), i-line (365 nm), KrF excimer laser (248 nm), ArF excimer laser (193n)
m), not only F2 laser (157 nm) but also charged particle beams such as X-rays and electron beams can be used. For example,
When an electron beam is used, thermionic emission type lanthanum hexaborite (LaB6) or tantalum (Ta) can be used as an electron gun. Further, when an electron beam is used, a structure using a mask may be used, or a pattern may be formed directly on a substrate without using a mask.

The magnification of the projection optical system may be not only the same magnification system but also any of a reduction system and an enlargement system.

As the projection optical system, when far ultraviolet rays such as excimer laser are used, a material which transmits far ultraviolet rays such as quartz or fluorite is used as a glass material, and when a F2 laser or X-ray is used, a catadioptric system or a refracting system is used. (It is also possible to use a reflection type reticle.)

When a linear motor is used for the mask stage 4 or the substrate stage 5, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force may be used. The stage may be of a type that moves along a guide or a guideless type that does not have a guide.

When a plane motor is used as the stage driving device, one of the magnet unit (permanent magnet) and the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is connected to the moving surface side of the stage. (Base).

The reaction force generated by the movement of the substrate stage 5 may be mechanically released to the floor (ground) by using a frame member as described in Japanese Patent Application Laid-Open No. 8-166475. The present invention is also applicable to an exposure apparatus having such a structure.

The reaction force generated by the movement of the mask stage 4 may be mechanically released to the floor (ground) by using a frame member as described in Japanese Patent Application Laid-Open No. 8-330224. The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the exposure apparatus according to the embodiment of the present invention converts various subsystems including the components described in the claims of the present application into predetermined mechanical accuracy, electrical accuracy,
It is manufactured by assembling to maintain optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electric systems to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

The semiconductor device, as shown in FIG.
Step 201 for designing the function and performance of the device, step 202 for manufacturing a mask (reticle) based on the design step, step 203 for manufacturing a substrate (glass plate, wafer) serving as a base material of the device, and the above-described embodiment. It is manufactured through a substrate processing step 204 of exposing a mask pattern to a substrate by the exposure apparatus, a device assembling step (including a dicing step, a bonding step, and a packaging step) 205, an inspection step 206, and the like.

[0124]

According to the present invention, the position of the boundary of the projection area corresponding to the joint of the pattern is detected, and the position of the projected image of the pattern to be projected and exposed next is determined based on the detected result. Since the adjustment is performed, positioning can be performed with high accuracy when the projection areas are overlapped with each other. Therefore, a pattern can be accurately formed on a large-sized substrate.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view showing an embodiment of an exposure apparatus of the present invention.

FIG. 2 is a configuration diagram showing an embodiment of the exposure apparatus of the present invention.

FIG. 3 is a plan view for explaining a filter.

FIG. 4 is a schematic configuration diagram for explaining a projection optical system in the exposure apparatus of the present invention.

FIG. 5 is a plan view for explaining an image field set by the projection optical system.

FIG. 6 is a plan view for explaining a relationship between a mask and an image field.

FIG. 7 is a plan view for explaining a relationship between a glass substrate and an image field.

FIG. 8 is a diagram for explaining a state in which the irradiation amount of exposure light at a joint is controlled.

FIG. 9 is a flowchart illustrating a sequence of an exposure operation.

FIG. 10 is a flowchart illustrating a sequence of an exposure operation.

FIG. 11 is a diagram for explaining a state in which a boundary portion is controlled by a field stop.

FIG. 12 is a view for explaining a state in which exposure is performed by moving a mask stage.

FIG. 13 is a flowchart illustrating an example of a manufacturing process of a semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 2 Illumination optical system 3 (3a-3e) Projection optical system 4 Mask stage 5 Substrate stage 17 Controller (control system) 26 Field stop 34 (34a-34e) Image field (projection area, projection image) 35 (35a) -35h) Boundary part 36 (36a-36d) Joint part 37 Mask stage driving unit (moving device) 40 Substrate stage driving unit (moving device) 41 Detector (position detecting device) 53, 54, 55 Divided pattern (exposure area) 58a , 58b Joint (peripheral part) M Mask P Glass substrate (substrate)

Claims (13)

[Claims] When an image of a pattern of a mask illuminated with exposure light is projected and exposed on a substrate synchronously moving with the mask via a projection optical system, a pattern of a pattern previously projected and exposed on the substrate is exposed. In an exposure method in which the peripheral portions of an image exposure area and an exposure area to be projected and exposed next are overlapped with each other, a position of a boundary of a projection area of a projection image of a pattern to be projected and exposed first is detected. And, based on the detected result,
An exposure method comprising: adjusting a position of a projected image of a pattern to be projected and exposed next. 2. The exposure method according to claim 1, wherein the positions of the mask and the substrate are adjusted based on the detection result. 3. The exposure method according to claim 1, wherein a position of a boundary of the projection area is changed based on the detection result. 4. The exposure method according to claim 1, wherein a position of a boundary of the projection area is detected based on information on an amount of exposure light in the projection area. Exposure method. 5. The exposure method according to claim 1, wherein the adjustment is performed such that the irradiation amounts of the exposure light in the overlapped portion of the pattern and those other than the overlapped portion substantially match. An exposure method comprising: 6. The exposure method according to claim 1, wherein the projection optical system includes a plurality of optical systems arranged in a direction orthogonal to the synchronous movement direction. An exposure method, wherein an optical path of a predetermined optical system among the plurality of optical systems is shielded in accordance with the position of a boundary portion of the projection area. 7. The exposure method according to claim 1, wherein the mask moves a predetermined distance in a direction orthogonal to the synchronous movement direction. 8. The exposure method according to claim 7, wherein the predetermined distance is at least 1/100 of a projection area in one optical system in a direction orthogonal to the synchronous movement direction.
An exposure method, wherein the number is two or more. 9. When projecting an image of a pattern of a mask illuminated with exposure light onto a substrate which moves synchronously with the mask via a projection optical system, the image of the pattern previously exposed on the substrate is exposed. A position for detecting the position of the boundary of the projection area of a projected image of a pattern to be projected and exposed in an exposure apparatus in which the peripheral portion of an exposure area adjacent to an image and an exposure area to be projected next are overlapped with each other. A detection device, a moving device that synchronously moves the mask and the substrate with respect to the projection optical system, and a position of a projection image of a pattern to be projected and exposed next is set to a predetermined position based on the detection result. An exposure apparatus, comprising: a control system for controlling the moving device. 10. The exposure apparatus according to claim 9, wherein the position detection device is a light detection device that detects information on the amount of exposure light in the projection area. 11. The exposure apparatus according to claim 9, wherein the projection optical system includes a plurality of optical systems arranged in a direction orthogonal to the synchronous movement direction. 12. The exposure apparatus according to claim 9, wherein the moving device is capable of moving the mask by a predetermined distance in a direction orthogonal to the synchronous moving direction. Exposure equipment. 13. When projecting an image of a pattern of a mask illuminated with exposure light onto a substrate synchronously moving with the mask via a projection optical system, the image of the pattern previously projected and exposed on the substrate is exposed. In a device manufacturing method including an exposure step in which peripheral portions of an image exposure area and an exposure area to be projected and exposed next are superimposed on each other, the exposure step is a projection image of a pattern which is first projected and exposed. Detecting the position of the boundary of the projection area, and adjusting the projection position of the pattern to be projected and exposed next based on the detection result.