JP2000298353A - Scanning exposure method and scanning type aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To exposure a large-sized substrate without making an alginer large in size and high in cost. SOLUTION: A mask M and the substrate P are synchronously moved and 1st patterns 53 and 55 and a 2nd pattern 54 are connected and exposed on the substrate P. At least one part of the 1st patterns 53 and 55 and at least one part of the 2nd pattern 54 are a common pattern, and the common pattern 44 and non-common patterns 45a and 45b different from the common pattern 44 are formed as the 1st patterns 53 and 55 and the 2nd pattern 54 on the mask M. The 1st patterns 53 and 55 and the 2nd pattern 54 are connected by the common pattern 44.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning exposure method for scanning and exposing a pattern formed on a mask to a substrate such as a glass substrate by synchronously moving a mask and a substrate in a predetermined direction. The present invention relates to an exposure apparatus.

[0002]

2. Description of the Related Art In recent years, liquid crystal display panels which can be made thinner have been frequently used as display elements for personal computers and televisions. This type of liquid crystal display panel is manufactured by patterning a transparent thin film electrode into a desired shape on a photosensitive substrate having a rectangular shape in plan view by a photolithography technique. As an apparatus for this photolithography, an exposure apparatus for exposing a pattern formed on a mask (reticle) to a photoresist layer on a photosensitive substrate via a projection optical system is used.

Meanwhile, the above-mentioned liquid crystal display panel has been increasing in area due to the ease of viewing the screen. As an exposure apparatus that meets this demand, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-57986, a combination of a plurality of projection optical systems that project a mask pattern onto a substrate in an erect image is used. Are synchronously moved in a predetermined direction and scanned with respect to the projection optical system, so that a large exposure area is provided in a direction orthogonal to the synchronous movement direction, that is, an LCD (Liquid Crystal) formed on a mask.
2. Description of the Related Art A scanning exposure apparatus has been devised which sequentially transfers a pattern such as display to an exposure area on a glass substrate.

At this time, a plurality of projection optical systems are used as projection optical systems for obtaining good imaging characteristics without increasing the size of the apparatus even if the projection area is large. In this case, the projection areas adjacent to each other are arranged such that the ends of the projection areas overlap in a direction orthogonal to the scanning direction. In this case, the field stop of each projection optical system has a trapezoidal shape, and the total aperture width of the field stop in the scanning direction is set to be always equal. Therefore, the above-described scanning exposure apparatus has an advantage that a joint portion of an adjacent projection optical system is overlappedly exposed, and the optical aberration and the exposure illuminance of the projection optical system change smoothly.

In recent years, as a substrate for manufacturing a liquid crystal display panel, 1 m □ has been used in order to improve productivity by multi-paneling the liquid crystal panel and to manufacture a liquid crystal display panel having a larger display area for a television. It is considered to use a glass substrate having a large size.

As described above, in order to expose a liquid crystal display panel corresponding to a substrate size having a large display area, a method of performing scanning exposure using a mask having the same size as the substrate size and a method of exposing one liquid crystal display panel Is divided into a plurality of regions and the patterns are synthesized. In the former method, a high-speed throughput can be obtained, but the cost of the mask becomes enormous, which is not practical.

[0007] On the other hand, in the latter method, a step occurs due to a pattern drawing error of a mask, an optical aberration of a projection optical system, a positioning error of a stage for moving a glass substrate, and the like at a pattern joint portion, thereby deteriorating device characteristics. Or be impaired. Furthermore, when the synthesized patterns are superimposed in multiple layers, the overlay error of the exposure area of each layer and the line width difference of the pattern change discontinuously at the joint of the pattern, and when the liquid crystal display panel is turned on, the joint Therefore, there is a problem that the quality of the device is deteriorated, for example, color unevenness occurs.

As a scanning exposure apparatus for exposing a large glass substrate while solving this problem, for example, Japanese Patent Laid-Open No. Hei 10-64782 is provided. This is because, after scanning exposure is performed by synchronously driving a mask stage holding a mask and a substrate stage holding a glass substrate, the mask stage and the substrate stage are moved by the width of the illumination area in a direction orthogonal to the synchronous movement. By repeating the step of moving by a distance once or several times, a plurality of divided patterns are connected and transferred onto a large glass substrate.

[0009]

However, the above-described conventional scanning exposure method and scanning exposure apparatus have the following problems. The above-mentioned LCD pattern is used to electrically connect a pixel portion composed of a pattern in which a plurality of electrodes corresponding to a plurality of pixels are regularly arranged, a pattern of each electrode of the pixel portion, and a driver circuit for driving each of the electrodes. And a conducting portion. This pixel portion is formed on each of the partial patterns connected by the glass substrate by the scanning exposure apparatus.

However, in the above-mentioned scanning exposure apparatus, these contents are not taken into account, and the pattern of the mask is simply divided and transferred to the glass substrate. It will be larger than the above. Therefore, in addition to the enormous cost of the mask, the mask stage for holding the mask also needs to be adapted to the size of the mask, which causes a problem that the size of the apparatus and the cost increase.

The present invention has been made in view of the above points, and a scanning exposure method and a scanning type exposure apparatus capable of exposing a large substrate without increasing the size and cost of the apparatus. The purpose is to provide.

[0012]

In order to achieve the above object, the present invention employs the following structure corresponding to FIGS. 1 to 12 showing an embodiment. According to the scanning exposure method of the present invention, the mask (M) and the substrate (P) are synchronously moved, and the substrate (P) is exposed by joining the first pattern (53, 55) and the second pattern (54). In the scanning exposure method, at least a part of the first pattern (53, 55) and at least a part of the second pattern (54) are common patterns, and the first pattern (5) is provided on the mask (M).
3, 55) and a second pattern (54), a common pattern (44) and non-common patterns (45a, 45b) different from the common pattern (44) are formed. The first pattern (53, 55) and the second pattern (54) are connected.

Therefore, in the scanning exposure method of the present invention, the first pattern (53,
55) and the second pattern (54) are joined, so that the first pattern (53, 55) and the second pattern (54) can be continuously synthesized. Also,
At this time, the common pattern (4) formed on the mask (M)
4), the first pattern (53, 55) and the second pattern
Since the pattern (54) can be exposed, it is not necessary to separately form the common pattern (44) for the first pattern (53, 55) and the second pattern (54) on the mask (M). Can be reduced in size. Accordingly, the size of the mask stage (4) for holding the mask (M) can be reduced. In addition, since it is not necessary to use a plurality of masks (M), high throughput can be obtained.

The scanning exposure apparatus of the present invention comprises a mask stage (4) for holding a mask (M), a substrate (P)
The mask stage (4) and the substrate stage (5) are moved synchronously with respect to the optical path to form a first pattern (53, 55) and a second pattern on the substrate (P). In the scanning type exposure apparatus (1) for connecting and exposing (54), the mask (M) includes at least a part of the first pattern (53, 55) and at least a part of the second pattern (54). A common common pattern (44) and non-common patterns (45a, 45b) different from the common pattern (44) are formed, and the first pattern (53, 55) and the second pattern (54) are formed as a common pattern. A control device (17) for controlling the movement of the mask stage (4) and the substrate stage (5) so as to be joined by (44) is provided.

Therefore, in the scanning exposure apparatus according to the present invention, the control unit (17) controls the mask stage (4) and the substrate stage (5) so that the first pattern (53, 55) and the second pattern (54)
Are connected, so that these first patterns (53, 5
5) and the second pattern (54) can be continuously synthesized. At this time, the first pattern (53, 53) is formed by using the common pattern (44) formed on the mask (M).
55) and the second pattern (54) can be exposed, so that the common pattern (44) for the first pattern (53, 55) and the second pattern (54) is individually formed on the mask (M). This eliminates the necessity, and the size of the mask can be reduced. Accordingly, the size of the mask stage (4) can be reduced. In addition, since it is not necessary to use a plurality of masks (M), high throughput can be obtained.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a scanning exposure method and a scanning exposure apparatus according to the present invention will be described below with reference to FIGS. Here, an example in which five projection optical systems are used and a screen is synthesized on a substrate by three scanning exposures will be described.

FIG. 1 is a perspective view showing a schematic configuration of a scanning exposure apparatus 1 according to the present invention. Scanning exposure apparatus 1
Holds an illumination optical system 2, a projection optical system 3 including a plurality of projection system modules (optical systems) 3a to 3e, a mask stage 4 for holding a mask (reticle) M, and a glass substrate (substrate) P. The substrate stage 5 is mainly configured. In FIG. 1, the optical axis direction of the projection optical system 3 is defined as a Z direction, and a direction perpendicular to the Z direction is defined as an X direction, and a synchronous movement direction (scanning direction) of the mask M and the glass substrate P is defined as an X direction. Is defined as a Y direction.

As shown in FIG. 2, the illumination optical system 2 illuminates a light beam (exposure light) emitted from a light source such as an ultra-high pressure mercury lamp on a mask M, and includes a dichroic mirror 7, a wavelength selection Illumination system modules 10a to 10e provided corresponding to filters 8, light guide 9, and projection system illumination systems 3a to 3e, respectively (however, in FIG. 2, only those corresponding to illumination optical system 10a are shown for convenience). ).

The light beam emitted from the light source 6 is condensed by the elliptical mirror 6a and then enters the dichroic mirror 7. The dichroic mirror 7 reflects light having a wavelength required for exposure and transmits light having other wavelengths. The luminous flux reflected by the dichroic mirror 7 is
The light beam enters the wavelength selection filter 8, becomes a light beam having a wavelength (usually, at least one band of g, h, and i lines) suitable for the projection optical system 3 to perform exposure, and enters the light guide 9. The light guide 9 splits the incident light beam into five light beams, and passes through the reflection mirror 11 to each of the illumination system modules 10a.
To 10e.

Each of the illumination system modules 10a to 10e is generally constituted by an illumination shutter 12, a relay lens 13, a fly-eye lens 14, and a condenser lens 15. In this embodiment, the illumination system module 1
Illumination system modules 10b to 10e having the same configuration as
They are arranged at fixed intervals in the X and Y directions. Light beams from the illumination system modules 10a to 10e illuminate different illumination areas on the mask M.

The illumination shutter 12 is arranged behind the light guide 9 so as to be able to advance and retreat with respect to the optical path of the light beam.
The illumination shutter 12 blocks light from the light path when the light path is blocked, and releases light from the light flux when the light path is opened. In addition, the illumination shutter 12 includes
A shutter drive unit 16 for moving the illumination shutter 12 forward and backward with respect to the optical path is provided. The drive of the shutter drive unit 16 is controlled by the control device 17.

On the other hand, each of the illumination system modules 10a to 10e
Is provided with a light amount adjusting mechanism 18. The light amount adjusting mechanism 18 adjusts the exposure amount of each optical path by setting the illuminance of the light beam for each optical path, and includes a half mirror 19, a detector 20, a filter 21, and a filter driving unit 22. . Half mirror 19
Is arranged in the optical path between the filter 21 and the relay lens 13 and allows a part of the light flux transmitted through the filter 21 to enter the detector 20. The detector 20 is
It detects the illuminance of the incident light beam and outputs a detected illuminance signal to the control device 17.

As shown in FIG. 3, the filter 21 is formed by patterning a glass plate 21a in a blind pattern with Cr or the like so that the transmittance changes linearly and gradually within a certain range along the Y direction. And arranged between the illumination shutter 12 and the half mirror 19 in each optical path.
The half mirror 19, the detector 20, and the filter 21 are provided for each of a plurality of optical paths. The filter driving unit 22 moves the filter 21 along the Y direction based on an instruction from the control device 17.

The control device 17 controls the filter driving section 22 based on the illuminance of the light beam detected by the detector 20 so that the illuminance becomes a predetermined value, thereby adjusting the light amount for each optical path. .

The light beam transmitted through the light amount adjusting mechanism 18 reaches the fly-eye lens 14 via the relay lens 13.
A secondary light source is formed on the exit surface side of the fly-eye lens 14 so that the illumination area of the mask M can be irradiated with uniform illuminance via the condenser lens 15.

The luminous flux transmitted through the mask M enters the projection system modules 3a to 3e, respectively. Then, the pattern of the mask M in the illumination area is transferred onto the resist-coated glass substrate P with a predetermined imaging characteristic. As shown in FIG. 4, each of the projection system modules 3a to 3e includes an image shift mechanism 23, two sets of catadioptric optical systems 24 and 25, a field stop 26, and a magnification adjustment mechanism 27.

The light beam transmitted through the mask M enters the image shift mechanism 23. The image shift mechanism 23 shifts the pattern image of the mask M in the X direction or the Y direction, for example, by rotating two parallel flat plate glasses around the Y axis or the X axis, respectively. Image shift mechanism 2
The light beam transmitted through 3 enters a first set of catadioptric optical system 24.

The catadioptric optical system 24 forms an intermediate image of the pattern of the mask M.
8, a lens 29 and a concave mirror 30.
The right-angle prism 28 is rotatable around the Z axis, and is configured to rotate the pattern image of the mask M.

At this intermediate image position, a field stop 26 is arranged. The field stop 26 sets an image field on the glass substrate P. The light beam transmitted through the field stop 26 enters the second set of catadioptric optical system 25. The catadioptric optical system 25 includes a catadioptric optical system 24.
Similarly to the above, it comprises a right-angle prism 31, a lens 32 and a concave mirror 33. Also, the right-angle prism 31
It is configured to be rotatable around the Z axis, and to rotate the pattern image of the mask M.

The light beam emitted from the catadioptric optical system 25 passes through the magnification adjusting mechanism 27 and forms a pattern image of the mask M on the glass substrate P at the same erect magnification. Magnification adjustment mechanism 2
Reference numeral 7 denotes a pattern image of the mask M, which includes, for example, three lenses of a plano-convex lens, a biconvex lens, and a plano-concave lens, and moves a biconvex lens located between the plano-convex lens and the plano-concave lens in the Z-axis direction. Is changed.

FIG. 5 shows an image field (projection area) 34 of the projection system modules 3a to 3e on the glass substrate P.
It is a top view of a-34e. As shown in this figure, each of the image fields 34a to 34e has a trapezoidal shape. The image fields 34a, 34c, 34e and the image fields 34b, 34d are arranged to face each other in the X direction. Further, the image field 34a
To 34e are edges of adjacent image fields (35a and 35b, 35c and 35d, 35e and 35f,
35g and 35h) are arranged in parallel so as to overlap in the Y direction, as indicated by the two-dot chain line, and are set so that the total width of the image fields in the X direction is substantially equal.
That is, the exposure amounts when scanning exposure is performed in the X direction are equalized.

As described above, each of the projection system modules 3a-3
The provision of the joints 36a to 36d in which the image fields 34a to 34e by
The change of the optical aberration and the change of the illuminance in a to 36d can be made smooth. The shape of each of the image fields 34a to 34e in the present embodiment is a trapezoid, but may be a hexagon, a rhombus, a parallelogram, or the like.

The mask stage 4 holds the mask M and has a long stroke in the X direction for performing one-dimensional scanning exposure and a small stroke of about several mm in the Y direction orthogonal to the scanning direction. have. As shown in FIG. 2, the mask stage 4 is provided with a mask stage driving section 37 for driving the mask stage 4 in the above-described direction. The mask stage driving section 37 is provided with the control device 1
7.

As shown in FIG. 1, movable mirrors 38a and 38b are provided at the edges on the mask stage 4 in orthogonal directions. A laser interferometer 39a is arranged to face the movable mirror 38a. In addition, the moving mirror 38
b, a laser interferometer 39b is arranged to face.

These laser interferometers 39a and 39b
A laser beam is emitted to each of the movable mirrors 38a and 38b, and the distance between the movable mirrors 38a and 38b is measured, so that the position of the mask stage 4 in the X and Y directions, that is, the position of the mask M is raised. It is possible to detect with high resolution and high accuracy. Then, the laser interferometer 39
The detection results of a and 39b are output to the control device 17.

The control device 17 includes laser interferometers 39a,
Monitor the position of the mask stage 4 from the output of 9b,
By controlling the mask stage driving section 37, the mask stage 4 can be moved to a desired position.

The substrate stage 5 holds the glass substrate P. Like the mask stage 4, the substrate stage 5 has a long stroke in the X direction for performing one-dimensional scanning exposure and a step in the Y direction orthogonal to the scanning direction. With a long stroke to move. Further, the substrate stage 5 is provided with a substrate stage drive section 40 for driving the substrate stage 5 in the above-described direction. This substrate stage driving unit 40
Is controlled by the control device 17.

Further, the substrate stage 5 is also movable in the Z direction. The substrate stage 5 includes measuring means (not shown) for measuring the position in the Z direction between the pattern surface of the mask M and the exposure surface of the glass substrate P. Are always controlled to have a predetermined interval. Further, on the substrate stage 5, a detector (illuminance sensor) 41 is disposed at a height substantially equal to the exposure surface of the glass substrate P. The detector 41 detects the illuminance of the light beam on the glass substrate P, and outputs a detected illuminance signal to the control device 17.

Further, movable mirrors 42a and 42b are provided at the edges on the substrate stage 5 in orthogonal directions. A laser interferometer 43a is arranged to face the movable mirror 42a. Further, a laser interferometer 43b is arranged to face the movable mirror 42b.

These laser interferometers 43a and 43b
By emitting a laser beam to each of the movable mirrors 42a and 42b and measuring the distance between the movable mirrors 42a and 42b, the position of the substrate stage 5 in the X and Y directions, that is, the position of the glass substrate P is determined. It is possible to detect with high resolution and high accuracy. Then, the laser interferometer 43
The detection results of a and 43b are output to the control device 17.

The control device 17 includes the laser interferometers 43a, 43
By monitoring the position of the substrate stage 5 from the output of 3b and controlling the substrate stage driving unit 40,
Can be moved to a desired position. That is, the control device 17 monitors the positions of the mask stage 4 and the substrate stage 5 while controlling the driving units 3.
By controlling 7 and 40, the mask M and the glass plate P are synchronously moved in the X direction at an arbitrary scanning speed (synchronous moving speed) with respect to the projection system modules 3a to 3e.

As shown in FIG. 6, in the pattern area of the mask M, a pixel pattern (common pattern) 44 and peripheral circuit patterns (non-common patterns) 45a and 45b located at both ends in the Y direction of the pixel pattern 44 are provided. Are formed. In the pixel pattern 44, a pattern in which a plurality of electrodes corresponding to a plurality of pixels are regularly arranged is formed. A driver circuit for driving the electrodes of the pixel pattern 44 and the like are formed in the peripheral circuit patterns 45a and 45b.

Further, around the pattern area of the mask M, the mask marks 46a to 46c are located at the corners of the mask M.
46d are formed. Mask marks 46a to 46d
Is used for calculating various correction amounts at the time of alignment of the mask M, and is formed in a cross shape as shown in FIG.

Further, the mask M is positioned near the center of both side edges along the X direction (that is, the center of both ends in the Y direction of the mask M).
b are formed respectively. The mask alignment mark is used at the time of positioning with the glass substrate P, and like the mask marks 46a to 46d,
It is formed in a cross shape by Cr or the like.

As in the case of the mask M, as shown in FIG. 8, substrate marks 47a to 47d are formed at the corners of the glass substrate P around the projection area of the glass substrate P. The substrate marks 47a to 47d are used for calculating various correction amounts at the time of alignment of the glass substrate P.
8 is formed.

Also on the glass substrate P, the substrate alignment marks 57a, 57b are located near the center of both side edges along the X direction (that is, the center of both ends in the Y direction of the glass substrate P).
Are formed respectively. The substrate alignment mark is used at the time of positioning with the mask M, and has a cross-shaped transparent portion formed of Cr or the like, like the substrate marks 47a to 47d.

The mask marks 46a to 46d, the substrate marks 47a to 47d, the mask alignment marks 56a and 56b, and the substrate alignment marks 57a and 57
b is detected by the alignment systems 49a and 49b installed above the mask M in FIG. Each of the alignment systems 49a and 49b has a drive mechanism (not shown) that moves in the X direction, and is configured to retreat from the illumination area during scanning exposure.

First, a method of setting the dimensions of the pattern of the mask M in the scanning exposure apparatus 1 having the above configuration will be described below. Here, each of the image fields 34a to 34e shown in FIG.
Is 88 mm, the length L2 of the short side is 72 mm, and the distance L3 between adjacent image fields (the pitch in the Y direction of the image fields) is 80 mm. As shown in FIG. 11, a pixel pattern 50 and peripheral circuit patterns 51a and 51b located at both ends in the Y direction of the pixel pattern 50 are formed on the glass substrate P.

The size of the pixel pattern 50 is the diagonal length L4
Is 32 inches, the length L5 in the X direction is 398.52 mm,
The length L6 in the Y direction is 708.48 mm. The pixel pattern 50 has a pitch P1 of (0.123 × 3) mm in the X direction such that a unit pattern (partial pattern) 52 as shown in FIG. 12 corresponds to each of R, G, and B colors.
080 times at a pitch P2 of 0.123 mm in the Y direction (1
920 × 3) It is assumed that the pattern is a repetition pattern that continues for the number of times.

The peripheral circuit patterns 45a and 45b of the mask M shown in FIG. 6 are formed to have the same dimensions and the same shape as the peripheral circuit patterns 51a and 51b of the glass substrate P, respectively. Is arranged on the mask M so as to be exposed. The pixel pattern 44 of the mask M has the same length in the X direction and a different length in the Y direction than the pixel pattern 50 of the glass substrate P.

Here, in the pixel pattern 44 of the mask M, the length in the Y direction is L9, and the lengths in the Y direction exposed only by the projection system modules 3a and 3e outside both ends are L10 and L11, respectively. Then, the length L9 is determined as follows. First, the length L9 is a repetition of the unit pattern 52 shown in FIG.
= Integer multiple of 0.123 mm. Therefore, the following equation holds. L9 = L10 + L11 + L3 × 2 + L1 = 0.123 × n1 (1) Further, there is a relation of the following equation. L10 + L11 + L3 × 7 + 88 ≒ (1920 × 3) × 0.123 (2) The integer n1 satisfying the above equations (1) and (2) is
One of 2507 and 2808 is considered, but here n1
= 2508 and L9 = 308.484 mm.

Next, a procedure for positioning the mask M and the glass substrate P before exposing the pattern of the mask M to the glass substrate P by the scanning exposure apparatus 1 having the above configuration will be described. When the mask M and the glass substrate P are placed and held on the mask stage 4 and the substrate stage 5, respectively, illumination light having a wavelength that is not photosensitive to the resist is transmitted from the alignment system 49a via a reflection mirror (not shown). Inject in the Z direction.

The emitted illumination light irradiates the mask alignment mark 56a of the mask M, and transmits through the mask M to the substrate alignment mark 57a on the glass substrate P via the projection system module 3a located outside. Irradiated. The light reflected by the substrate alignment mark 57a is incident on the alignment system 49a via the projection system module 3a, the mask M, and the reflecting mirror. On the other hand, the light reflected by the mask alignment mark 56a also enters the alignment system 49a via the reflecting mirror.

The alignment system 49a detects the position of each alignment mark 56a, 57a based on the light reflected from the mask M and the glass substrate P. Specifically, the alignment system 49a simultaneously forms reflected light from the mask M and the glass substrate P on the imaging surface of the two-dimensional CCD via an imaging optical system (not shown) in the alignment system 49a. As shown in FIG.
6a image-processes the picked-up image overlapping the transparent portion 48 of the substrate alignment mark 57a. Thereby, the mask alignment mark 56a and the substrate alignment mark 57
a, the mask M and the glass substrate P
Is measured.

Next, the substrate stage 5 is moved to the mask stage 4
In the −Y direction. Then, the mask alignment mark 56b and the substrate alignment mark 5 are formed using the alignment system 49b by the same procedure as described above.
7b is measured to determine the amount of misalignment between the mask M and the substrate P. Based on the result, the mask stage 4 or the substrate stage 5 is finely moved to perform the alignment between the mask M and the glass substrate P. The illumination light at this time is applied to the mask alignment mark 56b of the mask M,
Projection system module 3 located outside through mask M
substrate alignment mark 5 on glass substrate P via e
7b.

Next, the operation of exposing the pattern of the mask M on the glass substrate P by the scanning exposure apparatus 1 having the above configuration will be described with reference to the flow charts shown in FIGS. In the following, it is assumed that the movement of the mask stage 4 and the substrate stage 5 are all performed under the control of the control device 17 via the mask stage driving unit 37 and the substrate stage driving unit 40.

Here, as shown in FIG. 8, the entire exposure pattern on the glass substrate P is set to a length L1 in the Y direction.
2, a division pattern (first pattern) 53 including a part of the peripheral circuit pattern 51 a and the pixel pattern 50.
And a division pattern (second pattern) 54 having a length L13 in the Y direction and having a part of the pixel pattern 50, and a division pattern (second pattern) 54 having a length L14 in the Y direction and having a peripheral circuit pattern 51b and a pixel pattern 50. It is assumed that the area is divided into three areas including a division pattern (first pattern) 55 including the portion, and scanning exposure is performed three times in total.

Here, the length L12 is defined by the + Y direction end point of the short side of the image field 34a and the image field 3
This is the distance in the Y direction between the long side of 4d and the end point in the −Y direction. The length L13 is the distance in the Y direction between the + Y direction end point of the long side of the image field 34b and the −Y direction end point of the long side of the image field 34c. The length L14 is the distance in the Y direction between the + Y direction end point of the long side of the image field 34b and the −Y direction end point of the short side of the image field 34e.

The divided pattern 53 and the divided pattern 5
4 overlaps at the joint 58a, and the division pattern 54 and the division pattern 55 overlap at the joint 58b. Also, the joints 58a and 58b are assumed to overlap the joints 36a to 36b of the image fields 34a to 34e by the same distance (that is, 8 mm).

First, when the exposure operation is started (step SP0), the joint 35a of the projection system modules 3a to 3e is started.
The illuminances Wa to Wh corresponding to .about.35h are sequentially measured (step SP1). Specifically, first, the control device 17 issues an instruction to the filter driving unit 22 and moves the filter 21 so that the light flux from the light source 6 passes through the filter 21 at the maximum transmittance. When the filter 21 moves, a light beam is emitted from the light source 6 via the elliptical mirror 6a. The irradiated light flux passes through the filter 21, the half mirror 19, the mask M, the projection system modules 3a to 3e, and the like, and then the glass substrate P
Reach the top. At this time, the mask M is moved so that a pattern or the like is not formed in the illumination area, or the mask M is removed.

The image fields 34a-34
e, the ends 35a to 35d overlapping at the joints 36a to 36d
The illuminance Wa to Wh of the light beam at 35 h is detected by the detector 41.
Measure sequentially. At the same time, a part of the light beam emitted from the light source 6 is partially
Incident on. The detector 20 measures the illuminance of the incident light beam, and outputs a detected illuminance signal to the control device 17.
The control device 17 controls the illuminance of each optical path measured by the detectors 20 and 41 and the illuminance Wa at the ends 35a to 35h.
ＷWh is stored.

Next, at step SP2, the controller 17
The mask alignment marks 56a, 56b and the substrate alignment marks 57a,
By the same procedure as the measurement of 57b, the alignment system 49
The mask marks 46a to 46d and the substrate marks 47a to 47d are sequentially superimposed by using a and 49b to measure the amount of displacement between the mask marks 46a to 46d and the substrate marks 47a to 47b. Thus, the amount of displacement between the mask M and the glass substrate P is measured.

Then, based on the obtained positional deviation amount, the mask M
The relative shift, rotation, and scaling correction amount between the camera and the glass substrate P are calculated, and at the time of scanning exposure, the image shift mechanisms 23 of the projection system modules 3a to 3e are based on the correction amounts.
Magnification adjusting mechanism 27, right-angle prisms 28 and 3 for rotating the image
1 is corrected.

In step SP3, based on the illuminances Wa to Wh at the ends 35a to 35h measured by the detector 41 in step SP1, the illuminances Wa to Wh are substantially predetermined values, and the illuminance differences (| Wa-Wb |, | Wc-W
The filter 21 is driven while measuring with the detector 20 for each of the illumination system modules 10a to 10e so that d |, | We-Wf |) is minimized. Thereby, the light amount of the light beam for each optical path is corrected.

In step SP4, the projection system module 3
illumination shutter 1 of illumination system module 10e corresponding to e
8 is inserted into the optical path via the shutter driving unit 16 to block the illumination light on the optical path for the image field 34e as shown in FIG. 8 (the illumination system modules 10a to 10a).
The illumination shutter 12 of d opens each optical path). Thus, an illumination area having a length L12 in the Y direction including the peripheral circuit pattern 45a and a part of the pixel pattern 44 is set in the mask M.

In step SP5, the first scanning exposure is performed by synchronously moving the mask M and the glass substrate P in the X direction. As a result, as shown in FIG. 8, the divided pattern 53 corresponding to the illumination area set by the projection system modules 3a to 3d is exposed on the glass substrate P.

Next, in step SP6, the substrate stage 5 is moved in the + Y direction by a distance PS1 step. This distance PS1 is equal to the pitch L3 of the image field in the Y direction.
Of three. That is, the distance PS1 is determined by the following equation. PS1 = L3 × 3 = 80 mm × 3 = 240 mm

In step SP7, the mask stage 4 is shifted in the Y direction by a distance MS1 so that the pixel pattern 50 is continuous at the pattern joint portion 58a on the glass substrate P. This distance MS1 is determined by the following equation, where n2 is a positive integer. MS1 = 80 × 3−0.123 × n2 (3) Here, considering that the distance MS1 is close to zero,
When n2 = 1951, MS1 = 0.027 mm, n2
When = 1952, MS1 = -0.096 mm.
Therefore, n2 = 1 where the shift amount of the mask stage 4 is small.
951 is selected, and the mask M is moved via the mask stage 4 in the + Y direction by a distance MS1 = 0.027 mm.

In step SP8, the illuminance of the image fields 34b and 34c is corrected in order to perform the second scanning exposure in the image fields 34b and 34c. Further, at the time of the first scanning exposure, the joint 58a of the glass substrate P is formed.
And an image field 3d for exposing the joint 58a during the second scanning exposure.
4b is corrected.

Specifically, the image field 34b,
Illuminance difference between the end portions 35c and 35d of 34c (| Wc-Wd
|) And the illuminance difference (| Wg−) between the end 35g of the image field 34d during the first scanning exposure and the end 35b of the image field 34b during the second scanning exposure.
Wb |) is minimized for each of the illumination system modules 10b and 10c as in step SP3 so that
At 0, the filter 21 is driven while measuring the illuminance of each optical path. Thereby, the light amount of the light beam in each optical path is corrected.

In step SP9, the projection system module 3
a, 3d, 3e corresponding to the illumination system modules 10a, 1e
0d and 10e illumination shutters 12
6 into the optical path and the image field 34
a, 34d, and 34e respectively shield the illumination light on the optical path (the illumination shutters 12 of the illumination system modules 10b and 10c open the respective optical paths). Thereby, the mask M
Has a length L1 in the Y direction including a part of the pixel pattern 44.
Three illumination areas are set.

In step SP10, the mask M and the glass substrate P are again synchronously moved in the X direction to perform the second scanning exposure. As a result, as shown in FIG.
On the upper side, the division pattern 54 corresponding to the illumination area set in the image fields 34b and 34c of the projection system modules 3b and 3c is exposed in a state where the division pattern 53 overlaps the division pattern 53 at the joint 58a.

Next, in step SP11, step S
Similarly to P6, the substrate stage 5 is moved stepwise in the + Y direction by the distance PS2. This distance PS2 corresponds to two pitches L3 in the Y direction of the image field. That is, the distance PS2 is determined by the following equation. PS2 = L3 × 2 = 160 mm

In step SP12, as in step SP7, the mask stage 4 is moved relative to the position of the mask M during the first scanning exposure so that the pixel pattern 50 is continuous at the pattern joint portion 58b on the glass substrate P. Y
The direction is shifted by the distance MS2, that is, the distance (MS2-MS1) for the second scanning exposure. This distance MS
2 is determined by the following equation, where n3 is a positive integer. MS2 = 80 × 3 + 80 × 2−0.123 × n3 (4) Here, considering that the distance MS2 is close to zero,
When n3 = 3252, MS2 = 0.004 mm, n3
= 3253, MS2 = -0.119 mm.
Therefore, n3 = 3 where the shift amount of the mask stage 4 is small.
252 and the mask stage 4 is moved by a distance M in the + Y direction.
S2 = 0.004 mm is shifted.

On the other hand, when n3 = 3253 is selected and the mask stage 4 is shifted by the distance MS2 = −0.119 mm and then subjected to scanning exposure, the joint 58 on the glass substrate P is obtained.
In b, the pixel pattern 50 is continuous, but the length L6 in the Y direction of the entire pixel pattern 50 is 708.603 mm, which is longer by one pitch P2 = 0.123 mm. That is, considering the shift distance MS2 of the mask M, the exposure width in the Y direction on the glass substrate P is expressed by the following equation. L5 + L6 + L3 × 7 + L1-MS2 = (1920 × 3) × 0.123 (5) Therefore, here, in order to reduce the shift distance MS2 of the mask M, that is, n3 = 3252 is selected, and the second shift of the mask M is performed. In order to set the distance MS2 to 0.004 mm, the length L6 on the mask M was set to n1 = 2508, and the length L9 was considered to be 308.484 mm.

In step SP13, the illuminance of the image fields 34b to 34e is corrected in order to perform the third scanning exposure in the image fields 34b to 34e. Further, at the second scanning exposure, the joint 58 of the glass substrate P is formed.
The illuminance of the image field 34c that exposes b and the image field 34b that exposes the joint 58b during the third scanning exposure are corrected.

More specifically, the image fields 34b-
34e between the end portions 35c and 35d, the end portions 35e and 35f
Illuminance difference between the end portions 35g and 35h (| Wc-Wd |,
| We-Wf |, | Wg-Wh |), and the end 35e of the image field 34c at the time of the second scanning exposure and the end 3 of the image field 34b at the time of the third scanning exposure.
5b, each illumination system module 1 in the same manner as in step SP3 so as to minimize the illuminance difference (| We-Wb |).
The filter 21 is driven while the detector 20 measures the illuminance of the luminous flux of each optical path for each of 0b to 10e. Thereby, the light amount of the light beam in each optical path is corrected.

At step SP14, the illumination shutter 12 of the illumination system module 10a corresponding to the projection system module 3a is inserted into the optical path via the shutter drive unit 16,
As shown in FIG. 8, the illumination light in the optical path for the image field 34a is shielded (the illumination system modules 10b to 10b).
The illumination shutter 12 of 0e opens each optical path). Thus, an illumination area having a length L14 in the Y direction including the peripheral circuit pattern 45b and a part of the pixel pattern 44 is set in the mask M.

In step SP15, the mask M and the glass substrate P are again synchronously moved in the X direction to perform the third scanning exposure. As a result, as shown in FIG.
On the upper side, the division pattern 55 corresponding to the illumination area set in the image fields 34b to 34e of the projection system modules 3b to 3e is exposed in a state where the division pattern 54 overlaps the division pattern 54 at the joint 58b. Thus, using one mask M, a glass substrate P larger than the mask M
Is completed (step SP1).
6).

In the scanning exposure method and the scanning exposure method according to the present embodiment, the pattern formed on the mask M is the same as the pixel pattern 44 commonly used by the plurality of divided patterns 53, 54 and 55 during the scanning exposure. This pixel pattern 4
4 is divided into the peripheral circuit patterns 45a and 45b different from those of FIG.
By making the selection of 5a and 45b different, the first and second patterns can be arbitrarily selected and set, and one mask M is used to form a large area glass including a plurality of divided regions 53, 54 and 55. Exposure can be performed by connecting to the substrate P. Therefore, the size of the mask M can be reduced, and the manufacturing cost of the mask M can be reduced. At the same time, the size of the mask stage 4 can be reduced, so that the scanning exposure apparatus 1 itself can be reduced in size and cost.

In the scanning exposure method and the scanning type exposure apparatus according to the present embodiment, the adjacent divided patterns 53, 5
In the case of partially exposing portions 4 and 55, the common portion and the non-common portion in one mask M can be repeatedly used in accordance with a target pattern. Therefore, in particular, when the same pattern is repeatedly transferred as in a liquid crystal display device or a semiconductor memory, the above-described effect becomes more conspicuous by using this repeated pattern as a common pattern.

Further, according to the scanning exposure method and the scanning type exposure apparatus of the present embodiment, since the divided patterns 53, 54 and 55 are overlap-scanned and exposed at the joint portions 58a and 58b, when the pixel pattern 50 is divided. However, they can be joined smoothly, and the effect of preventing the occurrence of steps at the joints of the pattern and deteriorating the characteristics of the device, or preventing the joints from changing discontinuously and deteriorating the quality of the device can be obtained. Can be

In the scanning exposure method and the scanning type exposure apparatus according to the present embodiment, the projection system module 3
Since the illuminance of the light beam in a to 3e is measured and corrected, it is possible to prevent the exposure amount from fluctuating for each exposure even when performing the synchronous movement a plurality of times. Therefore, the division pattern 5
Variations in pattern line width can be prevented by 3, 54, and 55, and the quality of the device after exposure can be easily maintained.

Further, according to the scanning exposure method and the scanning exposure apparatus of the present embodiment, the image fields 34a to 34a-3
Since the illuminance is measured and corrected so that the illuminance of the end portions 35a to 35h where 4e overlaps is substantially the same, the joint portion 36a
Further, the illuminance at the joints 58a, 58b in the divided patterns 53, 54, 55 can be made the same as that in the other regions, and the entire pixel pattern 50 can be exposed with a uniform exposure amount, and the pattern line width can be reduced. It can be uniform over the entire pattern. Therefore, the effect that the quality of the device after exposure is greatly improved can be obtained.

In the scanning exposure method and the scanning exposure apparatus according to the present embodiment, the light path not used during the scanning exposure is shielded by the illumination shutter 12, so that the illumination area can be easily adjusted for each scanning exposure. it can.

In the scanning exposure method and the scanning exposure apparatus of the present embodiment, the projection system modules 3a to 3
Projection system modules 3b to 3d located inside of 3e
The divided patterns 53, 54, and 55 are connected by the exposure light passing through, so that the influence of the position error of the projection system module is small compared with the case where the projection system module located on the outside is used, and high accuracy is achieved. Scanning exposure can be performed. In addition, since the step moving distance of the substrate stage 5 is reduced, high-speed throughput can be realized.

In the scanning exposure method and the scanning type exposure apparatus according to the present embodiment, before the second and subsequent scanning exposure, the mask M is moved in the Y direction by the minimum moving distance based on the arrangement interval of the unit patterns 52. Since the pixel patterns 50 are moved, even if the pitch of the image field is not an integral multiple of the arrangement interval of the unit patterns, the pixel patterns 50 can be easily and surely continued at the joints 58a and 58b, and high-speed operation is possible. Throughput can also be achieved.

In the above embodiment, a plurality of parallel light paths are provided at five locations, and the illumination system modules 10a to 10e and the projection system modules 3a to 3e are correspondingly provided.
However, the number of optical paths is not limited to five, and may be, for example, four or six or more.

In the above embodiment, the screen is synthesized on the glass substrate P by three scanning exposures. However, the present invention is not limited to this. For example, the glass substrate P may be synthesized by four or more scanning exposures. A configuration in which a screen is synthesized on top may be used. Further, instead of providing one light source 6, one light source 6 may be provided for each optical path, a plurality of light sources may be provided, and light from a plurality of light sources (or one light source) may be combined into one using a light guide or the like. A configuration in which light is branched every time may be adopted. In this case, it is possible to eliminate the adverse effect due to the variation in the light amount of the light source, and even if one of the light sources disappears, only the entire light amount decreases, and it is possible to prevent the exposed device from becoming unusable.

The light path through the projection system modules 3a to 3e is shielded by the illumination shutter 12. However, the present invention is not limited to this. When light is shielded, a configuration may be employed in which an impenetrable portion is positioned in the optical path.

The substrate is not only a glass substrate P for a liquid crystal display device, but also a semiconductor wafer for a semiconductor device, a ceramic wafer for a thin-film magnetic head, or an original mask or reticle (synthetic quartz) used in an exposure apparatus. , Silicon wafer) and the like.

The type of the scanning type exposure apparatus 1 is not limited to the above-described one for manufacturing a liquid crystal display device, but is also used for manufacturing an exposure apparatus for manufacturing a semiconductor, a thin film magnetic head, an image pickup device (CCD) or a reticle R. It can be widely applied to mold exposure apparatuses and the like.

As the light source 6 of the illumination optical system 2, a bright line (g-line (436 nm) generated from an extra-high pressure mercury lamp,
i-line (365 nm)), KrF excimer laser (248
nm), an ArF excimer laser (193 nm), an F ₂ laser (157 nm), X-rays, or the like can be used.
Alternatively, a high frequency such as a YAG laser or a semiconductor laser may be used.

The magnifications of the projection system modules 3a to 3e are equal.
Any of a reduction system and an enlargement system as well as a doubling system may be used.
Also, as the projection system modules 3a to 3e, excimer
When far ultraviolet rays such as lasers are used, quartz or quartz
Using a material that transmits far ultraviolet rays such as fluorite, _Twolaser
When using a catadioptric or refractive optical system,
You.

When a linear motor is used for the substrate stage 5 or the mask stage 4, either an air levitation type using an air bearing or a magnetic levitation type using Lorentz force or reactance force may be used. Each of the stages 4 and 5 may be of a type that moves along a guide,
A guideless type without a guide may be used.

The reaction force generated by the movement of the substrate stage 5 may be mechanically released to the floor (ground) using a frame member. The reaction force generated by the movement of the mask stage 4 may be mechanically released to the floor (ground) using a frame member.

The illumination optical system 2 composed of a plurality of optical elements and the projection system modules 3a to 3e are respectively incorporated into the exposure apparatus main body to perform optical adjustment thereof, and the mask stage 4 and the substrate stage 5 composed of a large number of mechanical parts are provided.
Is attached to the exposure apparatus main body, wiring and piping are connected, and overall adjustment (electric adjustment, operation confirmation, etc.) is performed, whereby the scanning exposure apparatus 1 of the present embodiment can be manufactured. It is desirable that the manufacturing of the scanning exposure apparatus 1 be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

For a device such as a liquid crystal display element or a semiconductor device, a step of designing the function and performance of each device, a step of manufacturing a mask M based on this design step, a step of manufacturing a glass substrate P, a wafer, etc. The device is manufactured through the steps of exposing the pattern of the mask M to the glass substrate P and the wafer, assembling each device, and inspecting the device by the scanning exposure apparatus 1 according to the embodiment.

[0099]

As described above, in the scanning exposure method according to the first aspect, the common pattern and the non-common pattern are formed on the mask as the first pattern and the second pattern. The exposure is performed by joining one pattern and the second pattern. By this, in this scanning exposure method, by adjusting the illumination area for each scanning exposure, it becomes possible to perform exposure by connecting a large area substrate with one mask, so that the mask can be miniaturized and the mask can be reduced. Since the manufacturing cost can be reduced and the mask stage can be downsized,
The effect is obtained that the size and cost of the scanning exposure apparatus itself can be reduced. In particular, when the same pattern is repeatedly transferred as in a liquid crystal display device or a semiconductor memory, the above-described effect becomes more remarkable by setting the repeated pattern as a common pattern.

The scanning exposure method according to claim 2 has a configuration in which the first pattern and the second pattern are overlapped and connected to a part of the common pattern. Thereby, in this scanning exposure method, even when the common pattern is divided,
The joint can be smoothly performed, and the effect that a step is generated at the joint of the common pattern and the characteristics of the device is impaired, or the quality of the device is prevented from being deteriorated due to the discontinuous change of the joint can be obtained. .

The scanning exposure method according to claim 3 is configured so that scanning exposure is performed by a plurality of optical systems arranged in parallel in a direction orthogonal to the synchronous movement. Thus, in this scanning exposure method, a so-called multi-lens type scanning exposure apparatus can be configured with high accuracy and at low cost by using a plurality of small optical systems while having a large area projection area. Also in this case, an excellent effect of realizing size reduction and price reduction can be obtained.

The scanning exposure method according to claim 4 is configured to measure the illuminance of the exposure light for each of a plurality of optical systems and correct the illuminance for each synchronous movement. Accordingly, in this scanning exposure method, even when the synchronous movement is performed a plurality of times, it is possible to prevent the exposure amount from fluctuating for each exposure.
Variations in the pattern line width due to the pattern can be prevented, and the effect of easily maintaining the quality of the device after exposure can be obtained.

The scanning exposure method according to claim 5 is configured to correct the illuminance so that the illuminance of the optical path where the projection area overlaps is substantially the same. Thereby, in this scanning exposure method, the illuminance of the joint of the projection area, and furthermore, the illuminance of the joint in the first pattern and the second pattern can be made the same as the other areas, and the entire pattern on the substrate can be uniformly exposed. Exposure can be performed, and the pattern line width can be made uniform over the entire pattern. Therefore, the effect that the quality of the device after exposure is greatly improved can be obtained.

The scanning exposure method according to the sixth aspect is configured to shield the optical path of a predetermined optical system from light. This allows
According to this scanning exposure method, an effect is obtained that the illumination area can be easily adjusted for each synchronous movement.

The scanning exposure method according to claim 7 has a configuration in which the first pattern and the second pattern are joined by using the exposure light passing through the inner optical system. As a result, in this scanning exposure method, compared to the case where an optical system located outside is used, the influence of the position error of the optical system is small, and high-precision scanning exposure can be performed. In addition, since the distance of the step movement of the substrate stage is reduced, there is an excellent effect that a high-speed throughput can be realized.

In the scanning exposure method according to the present invention, before exposing the second pattern, the mask is moved in a direction orthogonal to the synchronous movement based on the arrangement interval of the partial patterns. Thereby, in this scanning exposure method, even if the pitch of the projection area is not an integral multiple of the arrangement interval of the partial patterns, the pattern on the substrate can be easily and reliably continued at the joint portion, and the high-speed The effect that a high throughput can be realized is obtained.

According to a ninth aspect of the present invention, there is provided a scanning exposure apparatus comprising: a common pattern common to the first pattern and the second pattern;
A non-common pattern different from the common pattern is formed on the mask, and the control device controls the movement of the mask stage and the substrate stage so that the first pattern and the second pattern are connected by the common pattern. I have. By this, in this scanning type exposure apparatus, by adjusting the illumination area for each scanning exposure, it becomes possible to connect and expose a large area substrate with one mask, so that the mask can be miniaturized, Since the manufacturing cost of the mask can be suppressed and the size of the mask stage can be reduced, the size of the scanning exposure apparatus itself can be reduced and the price can be reduced. In particular, when the same pattern is repeatedly transferred as in a liquid crystal display device or a semiconductor memory, the above-described effect becomes more remarkable by setting the repeated pattern as a common pattern.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an embodiment of the present invention, and is an external perspective view illustrating a schematic configuration of a scanning exposure apparatus.

FIG. 2 is a schematic configuration diagram of the scanning exposure apparatus.

FIG. 3 is a plan view of a filter constituting the scanning exposure apparatus of the present invention.

FIG. 4 is a schematic configuration diagram of a projection system module constituting the scanning exposure apparatus of the present invention.

FIG. 5 is a view showing an embodiment of the present invention, and is a plan view of an image field set by a projection system module.

FIG. 6 is a diagram illustrating an embodiment of the present invention, and is a plan view illustrating a relationship between a mask and an image field.

FIG. 7 is a plan view of a mask mark and a mask alignment mark formed on the same mask.

FIG. 8 is a diagram illustrating the embodiment of the present invention, and is a plan view illustrating a relationship between a glass substrate and an image field.

FIG. 9 is a plan view of a substrate mark and a substrate alignment mark formed on the glass substrate.

FIG. 10 is a plan view in which a mask mark and a substrate mark, and a mask alignment mark and a substrate alignment mark are overlapped and imaged.

FIG. 11 is a diagram showing an embodiment of the present invention,
FIG. 3 is a plan view showing a pattern exposed on a glass substrate.

FIG. 12 is a plan view of a unit pattern forming a pixel pattern in the same pattern.

FIG. 13 is a diagram showing an embodiment of the present invention,
FIG. 7 is a flowchart illustrating a sequence of an exposure operation.

FIG. 14 is a diagram showing an embodiment of the present invention,
FIG. 7 is a flowchart illustrating a sequence of an exposure operation.

[Explanation of symbols]

 M Mask (reticle) P Glass substrate (substrate) 1 Scanning exposure apparatus 3a to 3e Projection system module (optical system) 4 Mask stage 5 Substrate stage 17 Controller 34a to 34e Image field (projection area) 44 Pixel pattern (common pattern) 45a, 45b Peripheral circuit pattern (non-common pattern) 52 Unit pattern (partial pattern) 53, 55 Divided pattern (first pattern) 54 Divided pattern (second pattern)

Claims (9)

[Claims] 1. A scanning exposure method in which a mask and a substrate are synchronously moved and a first pattern and a second pattern are connected and exposed on the substrate, wherein at least a part of the first pattern and at least a second pattern are provided. A part is a common pattern, and the mask is formed with the common pattern and a non-common pattern different from the common pattern as the first pattern and the second pattern. A scanning exposure method, comprising: joining the first pattern and the second pattern. 2. The scanning exposure method according to claim 1, wherein the first pattern and the second pattern are joined by overlapping a part of the common pattern. 3. The scanning exposure method according to claim 1, wherein the exposure is performed by a plurality of optical systems arranged in parallel in a direction orthogonal to the synchronous movement. 4. The scanning exposure method according to claim 3, wherein the illuminance of the exposure light is measured for each of the plurality of optical systems, and the illuminance is corrected for each synchronous movement. 5. The scanning exposure method according to claim 4, wherein the illuminance is corrected such that the illuminances of the optical paths having overlapping projection areas become substantially the same. 6. The scanning exposure method according to claim 3, wherein an optical path of a predetermined optical system among the plurality of optical systems is shielded. 7. The scanning exposure method according to claim 3, wherein the first pattern and the second pattern are formed by using exposure light that passes through an inner optical system among the plurality of optical systems. A scanning exposure method, wherein the above-mentioned joining is performed. 8. The scanning exposure method according to claim 1, wherein the common pattern has a plurality of substantially identical partial patterns, and the mask is exposed before exposing the second pattern. A scanning exposure method, wherein the substrate is moved in a direction perpendicular to the synchronous movement with respect to the substrate based on an arrangement interval of the partial patterns. 9. A mask stage for holding a mask,
A scanning exposure apparatus that includes a substrate stage that holds a substrate, and that moves the mask stage and the substrate stage synchronously with respect to an optical path to connect and expose a first pattern and a second pattern to the substrate. A common pattern common to at least a part of the first pattern and at least a part of the second pattern, and a non-common pattern different from the common pattern are formed on the mask. A scanning exposure apparatus, comprising: a control device that controls movement of the mask stage and the substrate stage so that two patterns are connected by the common pattern.