WO1999050893A1

WO1999050893A1 - Exposure method and exposure system

Info

Publication number: WO1999050893A1
Application number: PCT/JP1999/001564
Authority: WO
Inventors: Kazuya Ota
Original assignee: Nikon Corporation
Priority date: 1998-03-30
Filing date: 1999-03-26
Publication date: 1999-10-07
Also published as: AU2958799A

Abstract

An exposure method in which when a probe of e.g. an atomic force microscope is relatively scanned to conduct alignment, the frequency of the use of the probe is decreased and hence deterioration of throughput is prevented. Before registration exposure for forming an image of a pattern on a reticle (R) onto shot regions on a wafer (W) by means of a projection optical system (PL), the wafer (W) is aligned while measuring the position of a wafer mark on the wafer (W) by means of an alignment sensor (35). Next, an image of a predetermined vernier on the reticle (R) is formed on a predetermined main scale for registration measurement near the shot regions on the wafer (W). The projections and recesses formed by the main scale in the resist on the wafer (W) and the projections and recesses formed by the latent image of the vernier are detected by relative scanning of the probe (40) of an atomic force microscope (39), thus determining the amount of misalignment. Based on the amount of misalignment, the wafer alignment is corrected before exposure.

Description

Description Exposure method and exposure system

The present invention relates to a method for exposing a mask pattern on a sensitive substrate in a photolithography process for manufacturing a device such as a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, or a thin-film magnetic head. The present invention relates to an exposure method and an exposure system (exposure apparatus) used for the apparatus. Background art

When manufacturing semiconductor devices, etc., projection that transfers the reticle pattern as a mask to each shot area on a wafer (or glass plate, etc.) coated with a resist as a sensitive material via a projection optical system. An exposure apparatus such as an exposure apparatus (eg, a stepper) is used. For example, since semiconductor elements are formed by stacking several tens of circuit patterns on a wafer in a predetermined positional relationship, these exposure devices require alignment marks on the reticle.

(Reticle mark), an alignment sensor for detecting the position of an alignment mark (wafer mark) attached to each shot area on the wafer, and a reticle and wafer based on the detection results of the alignment sensor. There is a stage system that performs positioning and an alignment device that consists of.

As an alignment sensor for detecting a reticle mark, for example, an image processing type reticle alignment microscope that illuminates a test mark with illumination light having the same wavelength as exposure light is used. On the other hand, as an alignment sensor for detecting a wafer mark, a laser step * An optical alignment sensor such as an alignment method, a two-beam interference method, or an image processing method is used. When using this alignment sensor for wafer marks, it is necessary to measure the baseline amount, which is the distance between the center of the reticle pattern image (exposure center) and the detection center of this alignment sensor, in advance with high accuracy. There is.

When an optical alignment sensor is used to detect a wafer mark, a predetermined offset may remain in the detection result due to the asymmetry of the wafer mark to be detected. Such an offset does not cause much problem with the currently required overlay accuracy, and in particular, the offset in an image processing type sensor is negligible. As they get better and better, the offsets can become a problem. In view of this, Japanese Patent Application Laid-Open No. 8-45814 discloses a scanning probe microscope (Scanning) that relatively scans the surface to be inspected with a probe (a stylus or a probe) like an atomic force microscope. Probe Microscopy (SPM) directly detects the unevenness of the resist surface caused by the wafer mark, and enables accurate detection of the wafer mark without being affected by the asymmetry of the shape of the wafer mark. A positioning method for detecting the position has been proposed.

Conventionally, as described above, a method using a scanning probe microscope (SPM) to detect the position of a wafer mark with high accuracy has been proposed. However, the scanning probe microscope (SPM) has excellent resolution, but the time required to detect the position of the wafer mark is longer than that of the optical alignment sensor, which reduces the throughput of the exposure process. There was an inconvenience. In addition, since the probe moves almost in contact with the surface of the resist, durability deteriorates, and there is a disadvantage that frequent maintenance is required. On the other hand, in a projection exposure apparatus, the illumination conditions may be switched according to the line width or pattern shape to be exposed. However, due to the characteristics of the projection optical system, the position of the image projected on the wafer for each illumination condition may vary. There was a slight shift. However, the conventional reticle alignment microscope for detecting the position of the reticle mark illuminates the target mark with an illumination system different from the illumination optical system for exposure, so that the illumination condition of the exposure light is switched every time. In addition, there was a possibility that a slight displacement occurred between the center of the projected image of the reticle pattern and the center detected by the reticle alignment microscope, which could cause an overlay error. In order to reduce the overlay error, for example, a test print is performed each time the illumination conditions are switched, and the overlay error is measured after development, and when the actual exposure is performed, the overlay error is calculated. There is also a method of correcting the alignment result only, but this has a disadvantage that it is complicated.

In view of the above, it is a first object of the present invention to provide an exposure method capable of aligning a substrate to be exposed with high accuracy even when switching illumination conditions.

Further, according to the present invention, when positioning is performed by relatively scanning a predetermined probe, the frequency of use of the probe can be reduced to avoid a decrease in throughput, and the positioning accuracy can be maintained high. A second object is to provide an exposure method that can be used.

It is a third object of the present invention to provide an exposure system that can use such an exposure method, and a method of manufacturing such an exposure system.

Another object of the present invention is to provide a device manufactured with high accuracy by using such an exposure method. Disclosure of the invention

In the first exposure method according to the present invention, the pattern (45) on the mask on which the first alignment marks (RS1, RS2) are formed is moved to the second alignment marks (RM1 to RM6). ) Is exposed on the substrate (W) on which is formed, the first step of applying a sensitive material on the substrate, and the step of irradiating substantially only the first alignment mark. A second step of setting an illumination area on the mask; a third step of illuminating the mask and exposing the first alignment mark on the sensitive material on the substrate; and A fourth step of detecting the unevenness distribution of the sensitive material by relatively scanning a predetermined probe with respect to the surface of the object, and, based on the result of the detection, detecting the latent position of the first alignment mark. Fifth step to obtain information on the positional relationship between the image and its second alignment mark And a sixth step of aligning the pattern with the substrate based on the positional relationship information, and a seventh step of exposing the pattern on the substrate after completion of the alignment. It is.

According to the present invention, the first and second alignment marks include, for example, a box-in-box mark composed of vernier marks (RS1, RS2) and a base of the substrate. The main scale marks (RM1 to RM6) with irregularities formed on the surface can be used. In the present invention, first, as an example, using an optical alignment sensor for a mask and an optical alignment sensor for a substrate, the baseline amount of the alignment sensor for the substrate (exposure of the mask pattern). The distance from the center to the detection center) is determined. Thereafter, the position of a predetermined alignment mark (base mark) on the substrate is detected using an alignment sensor for the substrate, and the detection result is used as a basis. By correcting with the amount of line, the alignment between the substrate and the mask pattern is performed. Next, when actually exposing the mask pattern to one lot of the substrate or switching the illumination conditions, the exposure is substantially performed under the illumination conditions used for the exposure. An illumination area on the mask is set so as to illuminate only the first alignment mark, and the first alignment mark is exposed on the sensitive material on the first substrate. In the case of ordinary sensitive materials (for example, ordinary resist), the unevenness distribution on the surface changes due to the latent image due to exposure. The positional relationship information (position shift amount) between the second alignment mark (base mark) and the latent image of the first alignment mark can be measured with high accuracy. From this displacement amount, for example, an offset based on the illumination conditions of the mask alignment sensor and, consequently, an offset of the baseline amount of the alignment sensor for the substrate are obtained. Further, by providing a plurality of alignment marks in the shot area, a magnification error (scaling in a shot), a rotation error between a predetermined pattern and its substrate (rotation in a shot), and the like are also obtained. After that, before actually exposing the predetermined pattern, the offset of the baseline amount of the alignment sensor for the substrate is corrected, and if possible, the magnification error, the rotation error, and the like are further corrected, so that the illumination condition is corrected. Even if is switched, alignment can be performed with high accuracy, and as a result, high overlay accuracy can be obtained.

Further, it is desirable that at least the latent image portion of the first alignment mark on the substrate is heated between the third step and the fourth step.

In addition, when the second alignment mark is formed in a non-shot area on the substrate other than a shot area where the pattern is transferred, the non-shot area is formed in the third step. That in the shot area It is desirable to expose the first alignment mark on the sensitive material.The positional relationship information includes, for example, the latent image of the first alignment mark and the second alignment mark. Is the amount of displacement.

Next, in the second exposure method according to the present invention, the pattern (45) on the mask, on which the first alignment marks (RS1, RS2) are formed, is respectively transferred to the second alignment mark. In an exposure method for exposing a plurality of substrates on which a plurality of substrates are formed, a first step of applying a sensitive material to each of the plurality of substrates, and a step of applying the first alignment mark to the plurality of substrates. A second step of exposing the sensitive material on the first substrate in the first substrate, and scanning a predetermined probe relative to the surface of the sensitive material on the first substrate, thereby forming the sensitive material. A third step of detecting the unevenness distribution, and a fourth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result; Based on the positional relationship information, the A fifth step of performing an alignment between a second substrate different from the first substrate and the pattern, and a sixth step of exposing the pattern on the second substrate after completion of the alignment. is there.

According to the second exposure method, after obtaining the positional relationship information between the latent image of the first alignment mark and the second alignment mark on the first substrate, the second Until the lighting conditions are switched next, the measurement results (or baseline amount) of the substrates after the substrate 2 are calculated using the offset obtained by the probe, for example, using an alignment sensor for an optical substrate. By performing the correction, the frequency of the measurement using the needle collection can be reduced to suppress a decrease in throughput, and high alignment accuracy can be maintained. At the same time, the wear of the probe is small.

Further, between the first step and the second step, the first step is substantially performed. It is desirable to set the illumination area on the mask so that only the alignment mark 1 is illuminated.

Further, when the second alignment mark is formed in a non-shot area on the first substrate other than a shot area to which the pattern is transferred, the second alignment mark is formed. In two steps, it is desirable to expose the first alignment mark on the sensitive material in the non-shot area.

Next, in the third exposure method according to the present invention, the pattern (45) on the mask on which the first alignment marks (RS1, RS2) are formed is replaced with the second alignment marks. In an exposure method for exposing a predetermined substrate which has been formed, a first step of applying a sensitive material on the predetermined substrate, and a step of applying the pattern and the first alignment mark on the predetermined substrate. A second step of exposing the sensitive material, a third step of detecting a concavo-convex distribution of the sensitive material by scanning a predetermined probe relative to the surface of the sensitive material, and a result of the detection. A fourth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on

According to the third exposure method, for example, the baseline amount of an optical alignment sensor for a substrate is previously determined, and the alignment sensor is used to determine the relationship between the pattern and the predetermined substrate to be exposed. Perform positioning. Then, for the predetermined substrate, after the exposure, for example, in a predetermined shot area, a predetermined pattern of the base (for example, a second alignment mark) and the first pattern for the first alignment in the pattern, for example, By detecting the unevenness distribution of the sensitive material based on the latent image of the mark part by relative scanning of the probe, the amount of displacement between the underlying pattern and the latent image can be detected with high accuracy it can. And, by this amount of displacement, An offset based on the illumination condition of the baseline amount of the optical alignment sensor is obtained. Further, depending on the configuration of the pattern to be detected, a magnification error or a rotation error is also obtained. That is, the actual overlay error (residual error) of the image of the pattern can be evaluated.

Further, the fifth step of replacing the predetermined substrate with another substrate different from the predetermined substrate and having the second alignment mark formed thereon, and the fourth step A sixth step of aligning the another substrate with the pattern based on the obtained positional relationship information, and a seventh step of exposing the pattern on the other substrate after the alignment is completed. It is desirable to further have In this case, for the substrate after the other substrate, the baseline amount of the optical alignment sensor is corrected by the measurement result using the probe, and if possible, magnification error and the like are corrected. In addition, a high positioning accuracy can be obtained by suppressing a decrease in throughput.

In the case where the second alignment mark is formed at least in a shot area on the predetermined substrate where the pattern is transferred, the second step is performed in the shot area in the second step. It is desirable to expose the first alignment mark on the sensitive material.

In the second step, the pattern is exposed to a plurality of shot areas on the predetermined substrate, and in the third step, an arbitrary shot area is selected from the plurality of shot areas. Then, it is desirable to detect the latent image of the first alignment mark and the second alignment mark in the selected shot area by relatively scanning the probe.

Next, in a fourth exposure method according to the present invention, the pattern (45) on the mask on which the first alignment marks (RS1, RS2) are formed is In an exposure method for exposing a substrate on which a second alignment mark is formed, a first step of applying a sensitive material onto the substrate, and a step of applying the first alignment mark to the substrate. A second step of exposing the sensitive material, a third step of heating at least the latent image portion of the first alignment mark on the substrate, and a predetermined probe with respect to the surface of the sensitive material. And a fourth step of detecting the unevenness distribution of the sensitive material by performing relative scanning.

According to the fourth exposure method of the present invention, before detecting the unevenness of the sensitive material using the predetermined probe, the detection area (the first alignment mark) of the sensitive material is detected. Is partially heated. When a chemically amplified resist is used as the sensitive material, unevenness does not occur on the surface depending on the latent image due to exposure.For example, the test region of the sensitive material is spot-heated using laser light or the like. By performing a kind of post-development baking (PEB), the exposed latent image becomes uneven. This makes it possible to detect the position of the latent image using the probe. By using a laser beam or the like in a wavelength range that is insensitive to the sensitive material as the heating light beam, the effect on the pattern obtained after development can be reduced.

Further, it is desirable to set an illumination area on the mask between the first step and the second step so as to substantially illuminate only the first alignment mark.

In addition, when the second alignment mark is formed in a non-shot area on the substrate other than a shot area where the pattern is transferred, the non-shot area is formed in the second step. Preferably, the first alignment mark is exposed on the sensitive material in the shot area, and at least the second alignment mark is exposed on the substrate. If the pattern is formed in the shot area to be transferred, in the second step, the pattern and the first alignment pattern are formed on the sensitive material in the shot area. It is desirable to expose the mark.

A fifth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result; and It is preferable that the method further includes a sixth step of performing an alignment between the substrate and the pattern, and a seventh step of exposing the pattern onto the substrate after the completion of the alignment.

Alternatively, a fifth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result, and setting the substrate to a substrate different from this substrate. A sixth step of exchanging for another substrate on which the second alignment mark is formed, and the other substrate based on the positional relationship information obtained in the fifth step. It is preferable that the method further include a seventh step of performing an alignment with the pattern, and an eighth step of exposing the pattern on the other substrate after the completion of the alignment.

In the second step, the pattern is exposed to a plurality of shot areas on the substrate, and in the fourth step, an arbitrary shot area in the plurality of shot areas is selected. It is desirable to detect the latent image of the first alignment mask and the second alignment mark in the selected shot area by relatively scanning the probe. .

In the above-mentioned exposure method, an example of the predetermined probe is a probe of an atomic force microscope. Other types of scanning probe microscope (SPM) probes can also be used.

Next, the first exposure system according to the present invention includes a first alignment mark. In an exposure system for exposing a pattern on a mask on which a mask is formed on a substrate on which a second alignment mark is formed and on which a sensitive material is applied, the mask is illuminated with illumination light. And the illumination area on the mask is arranged on the optical path of the illumination light between the light source and the mask, and substantially illuminates only the first alignment mark. An exposure device having an illumination area setting unit that performs scanning relative to the surface of the sensitive material with a predetermined probe to thereby align the latent image of the first alignment mark with the second alignment mark A detection device that obtains positional relationship information with the use mark, and an alignment device that is electrically connected to the detection device and performs alignment between the pattern and the substrate based on the positional relationship information. , And.

According to the first exposure system, for example, a mask alignment sensor is used in advance to measure the baseline amount of the substrate alignment sensor. Then, the first exposure method of the present invention can be used by correcting this baseline amount using the detection result of the detection device.

Further, a substrate transfer line is disposed between the exposure device and the detection device and serves as a passage for transferring the substrate on which the first alignment mark has been exposed by the exposure device to the detection device. It is desirable to prepare. Preferably, a heating device is provided on the substrate transport line between the exposure device and the detection device and heats at least a latent image portion of the first alignment mark on the substrate.

Alternatively, it is preferable that the exposure apparatus includes a projection system for projecting the pattern onto the substrate, and the detection apparatus is disposed in the exposure apparatus near the projection system. And heating at least a latent image portion of the first alignment mark on the substrate, which is disposed in the exposure apparatus. Preferably, a heating device is provided.

Further, when the second alignment mark is formed in a non-shot area on the substrate other than the shot area where the pattern is transferred, the exposure apparatus performs the non-shot operation. It is desirable to expose the first alignment mark on the sensitive material in the memory area.

Next, the first device according to the present invention is a predetermined device, and is manufactured by transferring and exposing the pattern onto the substrate by the first exposure system of the present invention. According to the present invention, since a high overlaying accuracy is obtained, a highly accurate device can be obtained.

Next, in the second exposure system according to the present invention, the pattern on the mask on which the first alignment mark is formed is formed by forming a second alignment mark on the mask and applying a sensitive material. An exposure system for exposing a first alignment mark on a sensitive material on a first substrate in the plurality of substrates, wherein the first alignment mark is exposed on a plurality of substrates. By scanning a predetermined probe relative to the surface of the sensitive material on the substrate, the latent image of the first alignment mark and the second alignment mark are used to scan the sensitive material. A detecting device that detects the unevenness distribution, and obtains positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result; Connect and their location And an alignment device for performing alignment between the second substrate different from the first substrate and the pattern based on the information, and exposing the pattern onto the second substrate after the alignment is completed. Things. According to such a second exposure system of the present invention, the second exposure method of the present invention can be used. Further, the throughput of the exposure apparatus is not reduced at all.

Next, the second device according to the present invention is a predetermined device, The pattern is manufactured by transferring and exposing the pattern onto the plurality of substrates by the second exposure system of the invention. Also according to the present invention, high overlay accuracy can be obtained, and as a result, a highly accurate device can be obtained.

Next, in a third exposure system according to the present invention, a pattern on the mask on which the first alignment mark is formed is formed by forming a second alignment mark on the mask and applying a sensitive material. An exposure system that exposes the first alignment mark on a sensitive material on the predetermined substrate, and a predetermined search for the surface of the sensitive material. The relative scanning of the needle detects the unevenness distribution of the sensitive material due to the latent image of the first alignment mark and the second alignment mark. Based on the detection result, the first And a detecting device for obtaining positional relationship information between the latent image of the positioning mark and the second positioning mark. According to such a third exposure system of the present invention, the third exposure method of the present invention can be used. Further, there is no reduction in the throughput in the exposure apparatus.

In addition, another substrate that is electrically connected to the detection device, is different from the predetermined substrate, and has the second alignment mark formed thereon, based on the positional relationship information. It is desirable to provide an alignment device for performing alignment with the pattern, and that the exposure device exposes the pattern on the other substrate after the alignment is completed.

Further, when the second alignment mark is formed at least in a shot area on the predetermined substrate where the pattern is transferred, the exposing apparatus sets the second alignment mark in the shot area. It is desirable to expose the first alignment mark on the sensitive material.

Next, a third device according to the present invention is a predetermined device, The pattern is manufactured by transferring and exposing the pattern onto the substrate by the third exposure system according to the invention. According to the present invention as well, a high overlay accuracy can be obtained, and as a result, a highly accurate device can be obtained.

Next, in a fourth exposure system according to the present invention, the pattern on the mask on which the first alignment mark is formed is formed by forming a second alignment mark on the mask and applying a sensitive material. An exposure system that exposes the first alignment mark on a sensitive material on the substrate, and an exposure system that exposes at least the first alignment mark on the substrate. A heating device that heats the portion, and a predetermined probe relatively scans the surface of the sensitive material, thereby detecting the latent image of the first alignment mark and the sensitivity of the latent image of the second alignment mark. A detecting device for detecting a concave-convex distribution of the material, and for obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result. thing A. According to the fourth exposure system of the present invention, the fourth exposure method of the present invention can be used.

In addition, a substrate transfer line is provided between the exposure apparatus and the detection apparatus, and is provided as a passage for transferring the substrate on which the first alignment mark has been exposed by the exposure apparatus to the detection apparatus. If provided, the heating device is preferably arranged on the substrate transport line between the exposure device and the detection device. Preferably, the heating device includes a baking device for baking the sensitive material.

Further, when the exposure apparatus includes a projection system that projects the pattern onto the substrate, and when the detection apparatus is disposed near the projection system in the exposure apparatus, the heating apparatus includes: It is preferable to be arranged in the exposure apparatus. The heating device irradiates a laser beam on the substrate. It is preferable to include a laser device.

Further, the exposure apparatus can expose the pattern to each of a plurality of shot areas on the substrate, and the detecting apparatus selects an arbitrary shot area among the plurality of shot areas, and selects the selected shot area. It is desirable to detect the latent image of the first alignment mark and the second alignment mark in the shot area by relatively scanning the probe.

Next, a fourth device according to the present invention is a predetermined device, which is manufactured by transferring and exposing the pattern on the substrate. According to the present invention as well, a high overlay accuracy can be obtained, and thus a highly accurate device can be obtained.

Next, the method of manufacturing the first exposure system according to the present invention includes the steps of: forming a pattern on the mask on which the first alignment mark is formed, forming the second alignment mark on the mask; In a method of manufacturing an exposure system for exposing a substrate on which a mask is applied, a light source for generating illumination light for illuminating the mask is provided between the light source and the mask on an optical path of the illumination light. An illumination area setting section for setting an illumination area on the mask so as to substantially illuminate only the first alignment mark; and relative scanning of a predetermined probe with respect to the surface of the sensitive material. , The unevenness distribution of the first alignment mark and the second alignment mark is detected, and based on the detection result, the latent image of the first alignment mark and the second alignment mark are detected. Alignment A detection unit that obtains positional relationship information with the mark, and an alignment unit that is electrically connected to the detection unit and performs alignment between the pattern and the substrate based on the positional relationship information. And manufactures an exposure system.

Next, the method for manufacturing a second exposure system according to the present invention includes the steps of: In a method of manufacturing an exposure system for exposing each of a plurality of substrates on which a sensitive mark is formed and a sensitive material is applied, the first alignment mark is replaced with a first alignment mark of the plurality of substrates. (1) The first alignment mark is obtained by relatively scanning an exposed portion on the substrate on the sensitive material and exposing the surface of the sensitive material on the first substrate with a predetermined probe. The unevenness distribution of the latent image of the first alignment mark and the second alignment mark is detected, and the positional relationship information between the latent image of the first alignment mark and the second alignment mark is detected based on the detection result. The position of the desired detection unit and its position before the exposure unit electrically connects to the detection unit and exposes the pattern on a second substrate different from the first substrate in the plurality of substrates. Based on the relevant information, the second And the Arai instrument unit which performs Araimento for the pattern is of also producing an exposure system assembled with a predetermined positional relationship.

Next, in a third method of manufacturing an exposure system according to the present invention, the pattern on the mask on which the first alignment mark is formed is formed by changing the pattern on the mask on which the second alignment mark is formed, and An exposure system for exposing a first alignment mark and its pattern onto the sensitive material on the predetermined substrate, the method comprising: And a predetermined probe relatively scans the surface of the sensitive material on the predetermined substrate, thereby obtaining the unevenness distribution of the latent image of the first alignment mark and the second alignment mark. And a detection unit that obtains positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result, and assembles them in a predetermined positional relationship. Manufacturing exposure system Is shall.

Next, the method for manufacturing a fourth exposure system according to the present invention includes the steps of: aligning a pattern on a mask on which a first alignment mark is formed with a second alignment mark; In a method of manufacturing an exposure system for exposing a substrate on which a sensitive mark is formed and coated with a sensitive material, the first alignment mark is exposed on the sensitive material on the substrate. And a heating section for heating at least a portion of the substrate on which the first alignment mark has been exposed, and a predetermined probe relative to the surface of the sensitive material, thereby scanning the substrate. The unevenness distribution of the latent image of the first alignment mark and the second alignment mark is detected, and based on the detection result, the latent image of the first alignment mark and the second position are detected. An exposure system is manufactured by assembling a detection unit for obtaining positional relationship information with an alignment mark and a predetermined positional relationship. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a configuration diagram illustrating a projection exposure apparatus according to a first embodiment of the present invention. FIG. 2 is a perspective view showing an arrangement of a stage-based alignment sensor and the like when performing baseline measurement in the first embodiment. FIG. 3 is a configuration diagram showing a laser irradiation system of the first embodiment. _C FIG. 4 is a plan view showing a pattern configuration of the reticle R of FIG. Fig. 5 is a plan view showing the shot arrangement of the wafers to be exposed in Fig. 1. Fig. 6 (a) is an enlarged plan view showing images of the main scale and the vernier scale for registration measurement, Fig. 6 (b) is a cross-sectional view taken along the line AA in Fig. 6 (a), and Fig. 6 ( c) is a diagram showing an example of a detection signal obtained by relatively scanning the surface of the resist of FIG. 6 (b) with a probe. FIG. 7 is a configuration diagram showing a part of the exposure system according to the second embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, a preferred embodiment of the present invention will be described. First, the present invention W 93

18 A first embodiment will be described with reference to FIGS.

FIG. 1 shows a schematic configuration of a projection exposure apparatus used in this example. In FIG. 1, the projection exposure apparatus comprises an ultraviolet pulse laser beam narrowed at a wavelength of 193 nm from an ArF excimer laser light source 1. The exposure light IL passes through a beam matching unit (BMU) 3 including a movable mirror and the like, and is incident on a variable attenuator 6 via a light-shielding pipe 5. An exposure controller 29 for controlling the amount of exposure to the resist on the wafer, the start and stop of the emission of the ArF excimer laser light source 1 and the like, and the extinction ratio of the variable dimmer 6 adjust. The exposure controller 29 receives information such as the target exposure amount from the main control system 28 which controls the overall operation of the apparatus, and outputs information such as the actually measured exposure amount to the main control system 28 as described later. I do. As the exposure light, K r F (wavelength 2 4 8 nm), or F ₂ (wavelength 1 5 7 nm) other excimer laser light such as a mercury lamp i-line (wavelength 3 6 5 nm), also Can use soft X-rays or the like.

The exposure light IL that has passed through the variable dimmer 6 enters a fly-eye lens 8 via a beam shaping optical system including lens systems 7A and 7B. The exit surface of the fly eye lens 8 is rotatably arranged by an aperture stop plate 9 of a lighting system and a driving motor 10. On the aperture stop plate 9, a circular aperture stop 9a for normal illumination, an aperture stop 9b for annular illumination, and an aperture stop 9c for deformed illumination composed of a plurality of eccentric small apertures are arranged. When the main control system 28 rotates the aperture stop plate 9 via the drive mode 10 in accordance with the illumination conditions, a predetermined aperture stop that defines the illumination conditions is changed to the exit surface of the fly-eye lens 8. Is set to

Exposure light IL emitted from the fly-eye lens 8 and having passed through a predetermined aperture stop in the aperture stop plate 9 is incident on a beam splitter 11 having a high transmittance and a low reflectance. Exposure light reflected at the beam splitter 1 1 The light enters the integrator sensor 12 composed of an output device, and the detection signal of the integrator sensor 12 is supplied to the exposure controller 29. The exposure controller 29 monitors the illuminance (pulse energy) of the exposure light IL and the integrated value (exposure amount) of the exposure light IL indirectly from the detection signal of the integrator sensor 12 based on the detection signal.

The exposure light IL transmitted through the beam splitter 11 enters the fixed field stop 15 in the reticle blind mechanism 16 via the reflection mirror 13 and the capacitor lens system 14. When the projection exposure apparatus of this example is of a scanning exposure type such as a step-and-scan method, in addition to a field stop 15 for defining an illumination area, unnecessary areas before and after scanning exposure can be obtained. A movable field stop is provided to prevent light exposure. The exposure light IL shaped by the field stop 15 of the reticle blind mechanism 16 passes through the imaging lens system 17, the reflection mirror 18, and the main condenser lens system 19, and the circuit pattern area of the reticle R Above, for example, an illumination area conjugate with a rectangular opening of the field stop 15 is irradiated with a uniform illuminance distribution.

Under the exposure light IL, the image of the circuit pattern in the illuminated area of the reticle R is projected through the telecentric projection optical system PL on both sides (or one side on the wafer side) at a predetermined projection magnification | 3 (3 is, for example, 1Z4 , 1/5) is transferred to the exposure area of the resist layer on the wafer W arranged on the image plane of the projection optical system PL. The exposure region is located on one of the plurality of shot regions on the wafer W. A chemically amplified resist is used as the resist applied to the wafer W in this example. The projection optical system PL of this example is a dioptric system (refractive system), but even if a power dioptric system (catadioptric system) is used to reduce absorption of short-wavelength exposure light. Good.

In this example, since the Ar F excimer laser light source 1 is used, , A variable dimmer 6, lens systems 7A and 7B, and a sub-chamber 60 that blocks each illumination optical path from the fly-eye lens 8 to the main condenser lens system 19 from the outside air. In order to avoid the exposure light from being absorbed by oxygen, the whole inside the sub-chamber 60 and the whole space inside the lens barrel of the projection optical system PL (space between a plurality of lens elements) are not shown. Dry nitrogen gas or helium gas is supplied via piping.

Hereinafter, the Z axis is taken parallel to the optical axis AX of the projection optical system PL, the X axis is taken parallel to the plane of Fig. 1 in a plane perpendicular to the Z axis, and the Y axis is taken perpendicular to the plane of Fig. 1. explain. At this time, reticle R is sucked and held on reticle stage 20, and reticle stage 20 is movably mounted on reticle base 21 in the X, Y, and rotation directions.

As shown in FIG. 2, a movable mirror 22 a having two reflecting surfaces substantially perpendicular to the X axis and the Y axis is fixed on the reticle stage 20. The laser beam LRX parallel to the X axis and the two laser beams LRY1 and LRY2 parallel to the Y axis are emitted from the laser sensor in the drive control unit 22, and the reticle stage 2 is irradiated by the laser interferometer. The X coordinate, Y coordinate, and rotation angle of 0 (reticle R) are measured in real time. Based on the measurement results and the control information from the main control system 28, the drive control unit 22 controls the reticle stage 20 via a drive motor (not shown) (linear motor, voice coil motor, etc.). Controls the positioning operation.

In FIG. 1, a wafer W is suction-held on a sample table 24 via a wafer holder 23, and the sample table 24 moves two-dimensionally along an XY plane parallel to the image plane of the projection optical system PL. The wafer stage 26 is fixed on the XY stage 25, and the sample stage 24 and the XY stage 25 constitute a wafer stage 26. The sample stage 24 adjusts the focus position (position in the Z direction) and the tilt angle of the wafer W. Controls the surface of the wafer W to the image plane of the projection optical system PL using the autofocus method and auto-leveling method, and the XY stage 25 steps the wafer W in the X and Y directions. I do. In addition, an alignment sensor 35 for an off-axis image processing type wafer mark is arranged on a side of the projection optical system PL in the X direction.

Then, one side in the X direction and the side in the + Y direction of the sample stage 24 are mirror-finished and used as a movable mirror. As shown in Fig. 2, the laser interferometer in the drive control unit 27 irradiates the laser beam LWX parallel to the X axis on the --X side of the sample stage 24, and the + Y direction side of the sample stage 24. Are irradiated with two-axis laser beams LWY1 and LWY2 in parallel with the Y-axis. In this case, the extension of the optical axis of the laser beam LWX on the X axis passes through the detection center of the alignment sensor 35 and the optical axis AX of the projection optical system PL, and one of the laser beams LWY 1 The extension of the optical axis of the laser beam LWY 2 passes through the optical axis AX, and the extension of the optical axis of the other laser beam LWY 2 on the Y axis passes through the detection center of the alignment sensor 35. Therefore, the X coordinate of the sample stage 24 is measured by the laser beam LWX, and the Y coordinate of the sample stage 24 is measured by the laser beam LWY 1 at the time of exposure, and is measured by the laser beam LWY 2 at the time of alignment. The rotation angle of the sample stage 24 is measured from the difference between the measured values by the laser beams LWY1 and LWY2. The configuration is such that the Abbe error does not occur by using the laser beams LWY 1 and LWY 2 properly.

When the side surface of the sample stage 24 is used as a movable mirror as shown in FIG. 2, the pitch of the sample stage 24 is shifted due to the Z-direction displacement between the optical path of the laser beam and the surface of the wafer W. , Or rolling may cause an error. To avoid this, the laser beams LWX: LWY1 and LWY2 are separated from each other by a predetermined distance in the Z direction. A beam may be applied to the side surface of the sample table 24, and Abbe error caused by pitching of the sample table 24 may be corrected based on a measurement value obtained by a pair of laser beams separated in the Z direction. Similarly to the reticle stage 20, a movable mirror having an orthogonal reflecting surface is installed on the sample table 24, and the movable mirror is irradiated with a laser beam to measure the position of the sample table 24. Is also good.

Referring back to FIG. 1, the two-dimensional position and rotation angle of the sample stage 24 (wafer W) measured by the laser interferometer in the drive control unit 27 are measured by the main control system 28 and the It is also supplied to Lightment Controller 36. The drive control unit 27 controls the positioning operation of the XY stage 25 via a drive mode (not shown) (not shown) based on the measured values and control information from the main control system 28. I do. However, the rotation error of the wafer W is corrected, for example, by rotating the reticle stage 20 via the main control system 28 and the drive control unit 22.

At the time of exposure, the main control system 28 rotates the aperture stop plate 9 as necessary to set illumination conditions. After the exposure of the pattern image of the reticle R onto one shot area on the wafer W is completed, the next shot area on the wafer W is transferred to the projection optical system PL via the XY stage 25. The operation of moving to the exposure area and exposing the pattern image of the reticle R is repeated in a step-and-repeat manner, thereby exposing each shot area on the wafer W. At this time, the exposure controller 29 controls the exposure amount for each shot area on the wafer W. When the projection exposure apparatus of this example is a scanning exposure type such as a step-and-scan method, the reticle R is exposed to the illumination area of the exposure light IL via the reticle stage 20 during exposure. + In synchronization with the scanning in the X direction (or -X direction) at the speed Vr, the wafer W is moved in the -X direction (or +) with respect to the exposure area by the projection optical system PL via the XY stage 25. X The scanning is performed at a speed of 3) Vr (3 is the projection magnification from the reticle R to the wafer W).

Before the exposure of each shot area on the wafer W as described above, it is necessary to precisely align the pattern of the reticle R with each shot area on the wafer W in advance. is there. For this purpose, a pair of, for example, cross-shaped reticle marks 37A and 37B (see FIG. 2) are formed so as to sandwich the reticle pattern area in the Y direction, and the reticle marks 37A and 37B are formed. An image processing type reticle alignment microscope (hereinafter, referred to as an “RA microscope”) 38 A and 38 B are arranged at the upper part. Shakuhachi microscopes 388 and 38B are epi-illumination systems that irradiate illumination light in the same wavelength range as the exposure light IL, and a CCD type with an image plane arranged at a position conjugate to the reticle R pattern plane. These two-dimensional imaging devices are provided, and imaging signals of these imaging devices are supplied to the alignment controller 36. The alignment controller 36 processes the image pickup signal to detect, for example, the amount of displacement between the images of the two marks in the X direction and the Y direction, and supplies the detection result to the main control system 28.

Further, as shown in FIG. 2, a reference member 32 is fixed near the wafer holder 23 on the sample stage 24, and two frame-shaped two-dimensional reference marks 34A, 3A are provided on the reference member 32. 4 A two-dimensional reference mark 33 is formed by combining a line 'and' space pattern in the B and X directions and a line 'and' space pattern in the Y direction. The distance between the fiducial marks 34 A and 34 B is set equal to the designed distance between the reticle marks 37 A and 37 B and the projected image on the wafer stage side, and the distance between the fiducial marks 34 A and 34 B is set. The distance between the center and the center of the reference mark 33 in the X direction is set to the designed distance (base line amount) BL1 between the center of the pattern image of the reticle R and the detection center of the alignment sensor 35. I have. The alignment sensor 35 An epi-illumination system that illuminates the test mark with non-photosensitive illumination light on the resist on the wafer W in a relatively wide band, and an index mark arranged on the surface on which the image of the test mark is formed And a two-dimensional image sensor that captures images of the test mark and the index mark. An image signal of this image sensor is also supplied to the alignment controller 36. The alignment controller 36 processes the image signal and detects the amount of displacement of the test mark in the X and Y directions with respect to the center (detection center) of the index mark, and uses the detection result as the main control system 2. Supply 8

Returning to FIG. 1, an atomic force microscope 39 having a probe 40 is arranged on a side surface in the + X direction of the projection optical system PL. The atomic force microscope 39 can displace the probe 40 in the Z direction within a predetermined short movement stroke. In this case, the atomic force microscope 39 moves the probe 40 with respect to the test object (the resist on the wafer W in this example) with respect to the atom at the tip of the probe 40 and the atom of the test object (or Molecule), and the position of the probe 40 in the Z direction is controlled so that the repulsion is constant, and the repulsion is constant. A detection signal corresponding to the position of the probe 40 in the Z direction is generated, and the detection signal is supplied to the alignment controller 36. When the probe 40 is used, the position of the needle 40 in the Z direction is controlled so that the repulsive force between the tip of the probe 40 and the surface of the resist on the wafer W is constant. The wafer W is moved in the X and Y directions via the XY stage 25. As a result, the probe 40 is displaced in the Z direction following very slight irregularities on the resist surface on the wafer W, so that the alignment controller 36 moves the probe 40 in the Z direction. By taking in the detection signal indicating the displacement of the sample table 24 in correspondence with the X coordinate and the Y coordinate of the sample table 24, it is possible to measure the unevenness distribution of the registry surface on the wafer W. Further, the alignment controller 36 determines the unevenness distribution by, for example, the slice level method or the The position of the underlying image of the resist and the position of the latent image of the specified mark in the resist are detected by processing using the pattern matching method, and the position between these marks in the X and Y directions is detected. The amount of deviation is obtained and supplied to the main control system 28. A more detailed detection principle of the atomic force microscope and the like are disclosed in, for example, Japanese Patent Application Laid-Open No. 8-45814.

In addition, the projection exposure apparatus of the present example is provided with a laser irradiation system as a heating system for partially heating the resist on the wafer W after exposure and before development. The heating can be regarded as a kind of PEB (Post Exposure bake).

Fig. 3 shows the laser irradiation system. In Fig. 3, when the wafer W is partially heated, the wavelength range in which the resist on the wafer W that emits the laser light source 41 is less sensitive to the resist (this example). In the infrared region, the laser beam LB 1 passes through a modulation element 42 having an electro-optical element and the like, a mirror 43, and a condensing lens 44 arranged on the side of the projection optical system PL, and a resist on the wafer W is transferred to the resist. A spot beam is formed on the spot. The spot beam is set to be large enough to cover an exposed mark image to be detected, for example, an image of a registration measurement mark. The modulation element 42 is, for example, an intensity modulation element in which a Pockels cell, a polarizer, and an analyzer are combined, and the oscillation timing of the laser light source 41 and the operation of the modulation element 42 are controlled by the main control system 2. Controlled by eight.

In this case, the intervals in the X and Y directions between the detection center of the alignment sensor 35 and the converging position of the laser beam LB 1 by the converging lens 44 are obtained in advance, and are set in the main control system 28. Is stored in the storage unit. Then, the main control system 28 moves the area to be heated on the wafer W through the XY stage 25 to the light condensing position of the condensing lens 44, and then oscillates or modulates the laser light source 41. After modulating the element 42, the laser beam Five

Irradiate L B 1 at 26 bpm. By the irradiation of the laser beam LB1, the resist on the wafer W is partially heated to several tens, for example, to about 80 to 90 ° C. In order to reduce the influence of heat generated by the laser light source 41, the laser light source 41 is installed outside the chamber in which the projection exposure apparatus of the present example is installed, and the laser beam from the laser light source 41 is emitted. The light may be guided to the side of the projection optical system PL via an optical fiber or the like.

Next, an example of the alignment operation in the projection exposure apparatus of the present embodiment will be described in detail.

First, on the reticle R of the present example, marks for measuring the registration (relative displacement) are formed. In addition to the circuit patterns and wafer marks in each shot area, marks for measuring the registration are formed on the wafer W by the conventional processes. Information on the arrangement coordinates of the marks is supplied to the main control system 28 as exposure data.

FIG. 4 is a plan view showing the reticle R of FIG. 1. In FIG. 4, a predetermined original pattern is formed in a pattern region 45 of the reticle R. A frame-shaped light shielding band 46 is formed so as to surround the pattern region 45, and a pair of reticle marks 37A and 37B are formed so as to sandwich the light shielding band 46 in the Y direction. A pair of sub-scales RS 1 and RS 2 for measuring registration are formed at predetermined intervals in the Y-direction at predetermined intervals in the Y-direction. A pair of marks similar to the vernier scales R S1 and R S2 are also formed on a part of the original pattern in the pattern area 45.

FIG. 5 is a plan view showing the wafer W to be exposed in FIG. 1. In FIG. 5, the surface of the wafer W has shot areas SA 1, SA 2,... At predetermined pitches in the X and Y directions. ·, SAN (N is an integer of 3 or more) In each of the shot areas SA1 to SAN, a two-dimensional wafer mark WM1 to WM4 composed of four, for example, cross-shaped convex parts (or concave parts) is formed together with a circuit pattern. In each of the shot areas SA1 to SAN, a pair of two-dimensional main scales RMA and RMB each consisting of a rectangular concave portion (or convex portion) for measuring the registration rate is also formed. In addition, a three-dimensional first pair of rectangular recesses (or protrusions) for measuring the registration ratio is provided at predetermined intervals at three locations on the wafer W near the shot regions. RM1, RM2, a second pair of main scales RM3, RM4, and a third pair of main scales RM5, RM6. A resist is applied so as to cover these shot areas SA1 to SAN and the mark for measuring the registration.

In order to perform the alignment in this example, first, the reticle alignment and the baseline amount of the alignment sensor 35 for the wafer mark are measured. For this purpose, as shown in FIG. 2, the XY stage 25 is driven so that the reference marks 34A and 34B of the reference member 32 on the sample stage 24 are almost conjugate with the reticle marks 37A and 37B. Move to position. In this state, illumination light is irradiated from the epi-illumination system of the RA microscope 38 A, and the images of the reference mark 34 A and the reticle mark 37 A are superimposed and imaged. The amount of displacement (Δ RX 1, Δ RY 1) of the reticle mark 37 A in the X and Y directions with respect to the image of the reference mark 34 A is detected. At the same time, the amount of misregistration (△ RX 2, ΔRY 2) of the reticle mark 37 B with respect to the image of the reference mark 34 B is detected via the RA microscope 38 B, and these misregistration amounts are shown in FIG. Supply to main control system 28.

The main control system 28 adjusts the displacements in the X direction, ΔRX1 and ΔRX2, to 0, respectively, and distributes the displacement in the Y direction (ARY 1 = —ARY2). Move reticle stage 20. This is the reticle The alignment is complete. The reason why the displacement amount in the Y direction is not set to 0 is that it is not easy to correct a magnification error. However, if possible, for example, it is desirable to control the projection magnification of the projection optical system PL or move the reticle R up and down so that the displacement in the Y direction is also reduced to zero.

In such a state where the reticle alignment is completed, in FIG. 2, the amount of displacement in the X and Y directions from the detection center of the reference mark 33 is detected by the alignment sensor 35 in FIG. This amount of displacement is also supplied to the main control system 28, and the main control system 28 displaces the known distance BL1 between the center of the reference marks 34A and 34B and the center of the reference mark 33. By correcting by the amount, the baseline amount BL (vector amount) of the alignment sensor 35 is obtained and stored.

Next, assuming that the wafer W on the wafer holder 23 is, for example, the leading wafer of a one-lot wafer, the alignment sensor 35 is used to align each shot area of the wafer W. For this purpose, n (n is, for example, an integer of 4 or more) wafer marks are selected from the four wafer marks WM1 to WM4 of the shot areas SA1 to SAN on the wafer W in FIG. The amount of displacement of these wafer marks from the detection center is detected via the alignment sensor 35. It is desirable that at least two wafer marks of the n wafer marks are wafer marks at different positions in one shot area.

The main control system 28 adds the X coordinate and the Y coordinate of the sample stage 24 when detecting the position of the corresponding wafer mark to the positional deviation amount, thereby obtaining the array coordinates of the n wafer marks. Ask for. Then, based on these actually measured array coordinates and the corresponding array coordinates in the design, the main control system 28 establishes a so-called multi-point Enhanced global alignment within the shot.

(EGA) method, scaling the wafer W in the X and Y directions. 9/50893

29 Haskelling), Rotation of wafer W shot arrangement (wafer rotation), orthogonality of the shot arrangement (wafer orthogonality), offset of wafer W in X and Y directions, wafer W Multiplication error of each shot area (intra-shot scaling) and rotation error of each shot area

(Rotation in the shot), etc. This calculation is called EGA calculation. Then, the main control system 28 uses these parameters to calculate the arrangement coordinates of each of the shot areas SA 1 to SAN on the wafer W on the coordinate system that defines the movement position of the sample table 24, and the registration. The array coordinates of the main scales RM 1 to RM 6 for measurement are calculated. This completes the wafer alignment. Thereafter, if possible, the projection magnification of the projection optical system PL or the position of the reticle R in the Z direction is corrected in accordance with the intra-shot scaling, and the rotation angle of the reticle R is corrected in accordance with the in-shot rotation.

Next, based on the coordinates obtained by correcting the array coordinates of the main scales RM1 to RM6 for registration measurement calculated as described above with the baseline amount of the alignment sensor 35, a pair of coordinates on the wafer W is calculated. The main scales RM 1 and RM2 are moved to positions conjugate with the vernier scales RS 1 and RS 2 on the reticle R in Fig. 4, and only the vernier scales 1 and 2 are surrounded by the field stop 15 in Fig. 1. The illumination area is set as described above, and the resist layers on the main scales RM1 and RM2 are exposed with the images of the subscales RS1 and RS2. Similarly, the resist layers on the pair of main scales RM3 and RM4 and the pair of main scales RM5 and RM6 on the wafer W are sequentially exposed to the images of the sub-scales R S1 and R S2.

Next, since the resist of the present example is a chemically amplified resist, the surface irregularities of the resist are not changed only by the exposed latent image. Therefore, in order to make the exposed latent images of the resist scales RS 1 and RS 2 for measuring the resist registration into an uneven distribution on the resist surface, the laser irradiation system shown in FIG. Part of the area where the images of the scales RS 1 and RS 2 were exposed Heat. To this end, the centers of the main scales RM1 to RM6 on the wafer W (center of the design) are sequentially moved to the laser beam focusing position by the focusing lens 44 of the laser irradiation system in FIG. The laser beam may be spot-irradiated to the resist layer at the focusing position.

When the resist of this example is not of the chemically amplified type, it is not always necessary to perform partial heating before detecting a latent image.

Next, using the atomic force microscope 39 of FIG. 1, images of the main scales RM 1, RM 2 to RM 5 and RM 6 on the wafer W and the vernier scales RS 1 and RS 2 exposed on the resist layer thereon ( The amount of misregistration with the latent image is measured. For example, in order to measure the amount of displacement between the image of the main scale RM 1 and the image of the sub-scale RS 1, the area (design area) where the main scale RM 1 is formed on the wafer W is determined by using the atom shown in FIG. Move to the bottom of the probe 40 of the microscope 39, operate the atomic force microscope 39, and extend the sample stage 24 through the XY stage 25 to some extent wider than the width of its main scale RM1. The sample is moved in the X and Y directions by a stroke, and the detection signal DS corresponding to the position of the sample pickup 40 in the Z direction is taken into the alignment controller 36 together with the coordinates of the sample table 24.

FIG. 6 (a) is an enlarged plan view showing an image RS 1W of the main scale RM 1 and the vernier RS 1, and FIG. 6 (b) is a cross-sectional view along the line AA in FIG. 6 (a). . As shown in FIG. 6 (b), a resist 47 is applied on the wafer W, and before the partial heating, the main surface of the resist 47 is formed of a concave portion as shown by a solid line RM1 before the partial heating. then _t that only the corresponding step portion 47 a to are formed, by partial heating of the resist 47, the image RS 1 W of the exposure area 48 of the vernier RS 1 becomes concave as shown by dotted lines, the recess A step 48a is formed so as to surround it. The surface of the resist 47 after the partial heating is relatively moved, for example, in the Y direction by the probe 40 of the atomic force microscope 39 shown in FIG. As shown in the trial A detection signal DS corresponding to the Y coordinate of the platform 24 is obtained. In the detection signal DS, the slopes DS 1 and DS 2 corresponding to the contour of the main scale RM 1 on the surface of the register 47 and the slopes DS 3 and DS 4 corresponding to the contour of the image of the vernier RS 1 appear. ing.

Therefore, the alignment controller 36 uses the slice level method or the pattern matching method to determine the center of the slopes DS 1 and DS 2 of the detection signal DS, that is, the Y coordinate Y 1 A of the center of the main scale RM 1 and the slope DS 3. , The center of DS4, that is, the Y coordinate Y1B of the center of the image of the vernier RS1, is detected, and the displacement AWY1 of these Y coordinates is obtained. Further, by scanning the probe 40 in the X direction relative to the center of the main scale RM1, the displacement AWX1 of the center of the image of the sub-scale R S1 in the X direction with respect to the center of the main scale RM1 is obtained.

Similarly, the displacement of the image of the vernier scale RS 1 (or RS 2) in the X and Y directions with respect to the main scales RM 2 to RM 6 (AWX2, AWY 2), (AW X 3, AWY 3), (AWX 4, AWY 4), (AWX 5, AWY 5), (AWX 6, AWY 6) are measured, and these six displacements (AW XI, AWY 1) to (AWX 6, AWY 6) are Supplied to main control system 28. The main control system 28 calculates the residual offset (0X1, 0Y1), residual wafer scaling (WSX1, WSY1), and residual wafer rotation (WRX 1, WR Y 1), scaling SMAG 1 in residual shot, rotation SR〇T 1 in residual shot. The difference between the two axis residual wafer rotations WRX1 and WRY1 corresponds to the wafer orthogonality. These are errors including the error of the wafer mark alignment sensor 35 and the error of the baseline amount measured as shown in FIG. Regardless of the factors of these errors, if the reticle pattern image is exposed to each shot area on the wafer W as it is, overlay errors will occur for each. You.

In order to prevent this, the pattern image of the reticle R is sequentially exposed to each of the shot areas SA1 to SAN on the wafer W in Fig. 5 while correcting the position of the wafer W to eliminate the above-mentioned residual errors. I do. Specifically, the correction of the residual offset (OX1, 0Y1), residual wafer scaling (WSX1, WSY1), and residual wafer rotation (WRX1, WRY1) are calculated by the above wafer alignment. When the wafer W is sequentially positioned based on the coordinates obtained by correcting the array coordinates of each shot area on the wafer W by the base line amount of the alignment sensor 35, the array coordinates are corrected. Do. In addition, the correction of the scaling SMAG 1 in the residual shot is performed by controlling the projection magnification of the projection optical system PL or by slightly moving the reticle R in the Z direction. The rotation SROT 1 in the residual shot is corrected by rotating at least one of the reticle stage 20 and the sample stage 24 on the wafer stage side.

Thus, all the shot areas S A1 to S A on the wafer W in FIG.

When the exposure of the reticle R pattern image to the N is completed, the sub-scales RS 1, RS of the reticle R in FIG. 4 are respectively placed on the main scales RMA and RMB for registration measurement in each of the shot areas SA 1 to SAN. The image of the vernier scale (not shown) in the same pattern area 45 as that of 2 is almost superposed and exposed. Therefore, in order to evaluate the overlay error of the pattern image of the actually exposed reticle R, before replacing the exposed wafer W with the next wafer to be exposed, all the shot areas SA on the wafer W are required. Select 111 shot areas (m is an integer of 1 or more, preferably 3 or more) from 1-3 ^^, and measure the two main scales RMA and RMB in these shot areas . At this time, it is also possible to measure one of the main scales RMA and RMB in the m shot areas. Then, in order to convert the latent image of the vernier scale into the irregularities of the resist, the laser irradiation system shown in Fig. 3 was used to sequentially expose the m shot areas to the areas where the main scales RMA and RMB were formed. The spot is irradiated with a laser beam with a weak wavelength range. As a result, the temperature of the part irradiated with the laser beam rises to several tens of degrees or more, and the image of the vernier scale (latent image) exposed on the main scales RMA and RMB emerges as irregularities on the resist surface. Go up. After that, in the m selected shot areas, the distribution of the concavo-convex distribution of the resist due to the main scales RM A and RMB and the latent image of the vernier scale on the main scales were measured sequentially through the atomic force microscope 39. From these measurement results, the amount of displacement between the m sets of the main scales RMA and RMB to be measured and the corresponding image of the vernier scale, in other words, the reticle R at two measurement points in the m shot areas (ΔΧ1, ΔY1), (ΔΧ2, ΔY2), ···, (ΔΧ (2m−1), ΔΥ (2m−1) ) And (ΔΧ 2 m, Δ Y 2m) are obtained. Using these displacement amounts, the main control system 28 performs the same EGA calculation as above, and calculates the residual offset (〇X2, OY2), residual wafer scaling (WSX2, WSY2), and residual wafer rotation ( WRX2, WRY 2), scaling within residual shot SMAG 2, rotation within residual shot SROT2 are required. However, when the number of shots of the m measurement objects is one or two, not all of these residual errors are obtained. Even if the number of shots is three or more, if the number of measurement points in the shot is one, the residual error in the shot cannot be determined. However, at least the residual offset (〇X2, OY2) is measured under any conditions.

After this measurement, the wafer is exchanged, and the wafer to be exposed next is placed on the wafer holder 23. Then, wafer alignment is performed using the alignment sensor 35 in the same manner as the first wafer, and the wafer stage side Parameters such as wafer scaling, wafer rotation, wafer orthogonality, offset, in-shot scaling, and in-shot rotation of the wafer to be exposed in the stage coordinate system determined by the laser interferometer are calculated. You. These parameters are used to calculate the displacement between the main scales RM1 to RM6 for registration measurement of the first wafer and the corresponding images of the subscales RS1 and RS2, and m shots. A new parameter is calculated by correcting the residual error (overlay error) measured for the area, and based on the new parameter, the array coordinates of each shot area on the wafer are calculated. Correct the rotation angle between the reticle and the wafer as necessary. After that, the wafer is positioned based on the calculated array coordinates, and each shot area on the wafer is sequentially exposed with the pattern image of the reticle R.

After the completion of the exposure, the second wafer is irradiated with a laser beam to the resist registration measurement mark in the selected shot area in the same manner as in the first wafer, and the unevenness of the resist is obtained. The displacement between the vernier scale of the resulting latent image and the main scale of the base is measured with an atomic force microscope 39 to determine the residual error.

Hereinafter, for the third and subsequent wafers, the results of wafer alignment are corrected based on the amount of misalignment of the registration measurement mark of the first wafer and the residual error measured for the immediately preceding wafer. Positioning and exposure are performed based on the result. As a result, high overlay accuracy can be obtained for each wafer of one lot. Moreover, since the atomic force microscope 39 is used for the second and subsequent wafers, only the marks in the m shot areas selected from the respective shot areas on the wafer are used, so that the throughput is almost zero. Does not drop. Also, since the atomic force microscope 39 is used less frequently, the probe 40 is less likely to deteriorate and Frequency can be reduced.

In addition, even when the illumination condition is switched to annular illumination or deformed illumination by rotating the aperture stop plate 9 in FIG. 1, information on the displacement of the projected image due to the switching of the illumination condition is based on the atomic force. Since it is included in the measured value of the displacement amount using the microscope 39, high overlay accuracy can be obtained.

It should be noted that the number of shot areas and the positions of the shot areas in which the marks for registration measurement are measured for each wafer using the atomic force microscope 39 are not necessarily the same. For example, the measurement shot position is alternately selected such that the first shot is the two left and right shot areas in the wafer, the second shot is the upper and lower two shot areas, and the third shot is the left and right two shot areas again in to Rukoto, the residual wafer scaling can the measurement alternately in the X and Y directions, also _c can be measured alternately further residual wafer rotation in the X-axis and Y-axis, the exposure by the projection exposure apparatus of FIG. 1 The processed wafer undergoes a development process, and then a processing step of performing etching and ion implantation using the resist pattern left after development as a mask, a resist removal step of removing unnecessary resist after the processing step, and the like. Pass. Then, the wafer process is completed by repeating each process such as exposure, development, processing, and resist removal. When the wafer process is completed, in the actual assembly process, a dicing process in which the wafer is cut into chips for each baked circuit, a bonding process in which wiring is performed on each chip, and a packaging process in which each chip is packaged Finally, semiconductor devices such as LSIs are manufactured. Next, a second embodiment according to the present invention will be described with reference to FIG. 7. In this embodiment, a measuring apparatus provided with an atomic force microscope 39 of FIG. 1 is provided separately from a projection exposure apparatus. It was done.

That is, FIG. 7 shows a part of the exposure system of this example. In FIG. 7, the projection exposure apparatus 51 and the measurement apparatus 54 are connected by a wafer transfer line 52. Have been. The projection exposure apparatus 51 has a configuration in which the atomic force microscope 39 and the laser irradiation system in FIG. 3 have been removed from the projection exposure apparatus in FIG. 1, and the measurement apparatus 54 has a probe 40 in FIG. It is composed of an atomic force microscope 39 provided, an XY stage, and these control devices.

Further, in FIG. 7, on a transfer line 52 between the projection exposure apparatus 51 and the measuring apparatus 54, the resist on the wafer exposed by the projection exposure apparatus 51 is baked before development. A baking device 53 for performing a PEB (Post-Exposure Bake) is disposed. The operations of the projection exposure apparatus 51, the baking apparatus 53, and the measuring apparatus 54 are controlled by a host computer 55. Note that a cable or an infrared transmission line for directly transmitting data or the like may be arranged between the control device of the measuring device 54 and the main control system of the projection exposure device 51.

In this example, when the first exposure is performed by the projection exposure apparatus 51, the baking apparatus 53 and the measurement are performed from the projection exposure apparatus 51 via the host computer 55 or directly. Information indicating that the exposed wafer is to be carried out is output to the apparatus 54. Then, while the first wafer moves on the transfer line 52, the baking device 53 performs a pre-development bake (PEB) of the resist on the wafer. As a result, the latent image of the vernier scale on the main scales R M A and R M B for registration measurement in each shot area in FIG. The wafer having passed through the baking device 53 reaches the measuring device 54, where the images of the main scale and the vernier scale for registration measurement in the m shot areas selected from the wafer are displayed. The positional deviation (residual error) is measured, and this positional deviation is output to the main control system of the projection exposure apparatus 51 via the host computer 55 or directly.

The main control system calculates a correction amount for the wafer alignment result from the supplied positional deviation amount, and reflects this correction amount on the next wafer to be exposed. You. That is, the positioning and exposure of the next wafer are performed based on the array coordinates obtained by correcting the alignment result of the next wafer with the correction amount. In the control device on the measuring device 54 side or the host computer 55, the correction amount for the result of the calibration is calculated based on the positional deviation amount between the main scale and the sub-scale image for registration measurement. The correction amount may be supplied to the main control system of the projection exposure apparatus 51.

When the projection exposure apparatus 51 receives information on the amount of displacement (or the amount of correction) measured by the measuring apparatus 54, it is highly likely that the exposure of the second wafer has already started. In this case, the measurement result of the first wafer is fed back to the third wafer. According to this method, there is no decrease in throughput in the projection exposure apparatus 51.

Further, in this example, if the measurement error by the measuring device 54 equipped with an atomic force microscope indicates that the residual error of the first wafer exceeds a predetermined allowable value, the reprocessing line is regarded as a defective wafer. After the resist is stripped and the resist is re-applied, it is supplied to the projection exposure apparatus 51 again. This eliminates the need for unnecessary processing and improves the yield of the final product.

The heating for converting the latent image of the registration measurement mark into the concave and convex of the resist is performed by the projection exposure apparatus 51 or the measuring apparatus 54 instead of the baking apparatus 53, as shown in FIG. A similar laser irradiation system may be provided, and only the measurement region may be partially heated by the laser irradiation system.

Further, in the first embodiment, prior to exposing the first wafer, an image of the vernier scale is exposed on the main scale for measuring the registration rate around the shot area, and the amount of misregistration is calculated. However, in this example, it is not necessary to perform the measurement because it is complicated. Further, also in this example, the number and arrangement of the shot areas for performing the registration measurement may be changed for each wafer. Further, in the above-described embodiments, the wafers for which the resist measurement is performed need not be all of the wafers, but can be performed at an arbitrary interval, for example, every two or three wafers. Furthermore, first performs measurement for each wafer, and then may be gradually apart number of wafers to be measured _c, while watching how the residual error measured is changed for each wafer, the change of the residual erroneous difference The distance between the wafers to be measured may be increased as the distance becomes smaller, and the distance between the wafers to be measured may be reduced as the amount of change increases.

In the above embodiment, the atomic force microscope 39 is used as the shape inspection system provided with the probe. However, the atomic force microscope 39 is not necessarily required, and the scanning probe microscope (S PM) can be used. As an example, a scanning tunneling microscope (Scanning Tunneling Microscope: STM) or the like may be used as the shape inspection system.

Further, in the above embodiment, the global alignment is used for the wafer alignment. However, the present invention can be applied to a case where a die-by-die alignment is performed. Further, the exposure method and the exposure system (exposure apparatus) according to the present invention are not limited to the exposure apparatus using X-ray-containing light as the exposure beam as in the above-described embodiment, but also include the charging apparatus such as an electron beam lithography apparatus. The present invention is also applicable to a charged particle beam transfer device that transfers or draws a predetermined pattern using a particle beam.

For example, as the electron gun in the case of using an electron beam, Kisaborai Bok to thermionic emission type of run Tan (L a B _6), as possible out using tantalum (T a). Further, the magnification of the projection optical system may be not only a reduction system but also any one of an equal magnification and an enlargement system.

In addition, a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or fiber laser as exposure illumination light, for example, Erbium (Er) (or both erbium and ytterbium (Yb)) Is A harmonic that is amplified by a looped fiber amplifier and wavelength-converted to ultraviolet light using a nonlinear optical crystal may be used.

The application of the exposure apparatus of the above embodiment is not limited to an exposure apparatus for manufacturing semiconductors. For example, an exposure apparatus for a liquid crystal that exposes a liquid crystal display element pattern to a square glass plate, The present invention can be widely applied to an exposure apparatus for manufacturing a thin film magnetic head.

An illumination optical system composed of multiple lenses and a projection optical system are incorporated into the exposure apparatus body to perform optical adjustment, and a reticle stage and wafer stage composed of many mechanical parts, and an atomic force microscope and heating system The exposure apparatus of the present embodiment can be manufactured by attaching a laser irradiation system or the like to the exposure apparatus main body, connecting wiring and piping, and performing overall adjustment (electrical adjustment, operation confirmation, etc.). . It is desirable to manufacture the exposure equipment in a clean room where the temperature and cleanliness are controlled.

As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention. Further, all disclosures, including the specification, claims, drawings, and abstract, of Japanese Patent Application No. 10-83636, filed March 30, 1998, are as follows: It is incorporated here as it is. Industrial applicability

According to the first exposure method of the present invention, the amount of misalignment between a base alignment mark and an exposed latent image of the alignment mark is measured, and a predetermined pattern and a substrate are determined based on the measurement result. Since the positional relationship between them is corrected, there is an advantage that the substrate to be exposed can be positioned with high accuracy even when the illumination condition is switched to deformed illumination or the like.

Further, according to the second exposure method of the present invention, a probe is provided for the first substrate. Since the second substrate is aligned based on the amount of positional deviation obtained by the relative scanning, the frequency of needle collection can be reduced to avoid a drop in throughput, and the alignment can be performed. It has the advantage of maintaining high accuracy.

Further, according to the third exposure method of the present invention, an actual overlay error (residual error) of the image of the pattern can be evaluated.

Further, according to the fourth exposure method of the present invention, the position of the latent image of the test mark can be detected even if the sensitive material is a chemically amplified resist.

Further, according to the exposure system of the present invention, the exposure method of the present invention can be performed. Further, according to the fourth exposure system, since the sensitive material can be heated at least partially, the position of the latent image of the test mark can be detected even if the sensitive material is a chemically amplified resist. In addition, in the exposure system of the present invention, when the exposure apparatus and the detection apparatus are provided separately, there is an advantage that the throughput of the exposure apparatus is not reduced at all.

Next, according to the device of the present invention, since it is manufactured by the exposure system of the present invention that can use the exposure method of the present invention, high overlay accuracy is obtained, and as a result, a high-performance device is obtained.

Claims

The scope of the claims

1. In an exposure method, a pattern on a mask on which a first alignment mark is formed is exposed on a substrate on which a second alignment mark is formed.

A first step of applying a sensitive material on the substrate,

A second step of setting an illumination area on the mask so as to substantially illuminate only the first alignment mark;

A third step of illuminating the mask and exposing the first alignment mark on the sensitive material on the substrate;

A fourth step of detecting the unevenness distribution of the sensitive material by relatively scanning a predetermined probe with respect to the surface of the sensitive material;

A fifth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result;

A sixth step of aligning the pattern with the substrate based on the positional relationship information;

After the alignment, a seventh step of exposing the pattern on the substrate;

An exposure method, comprising:

2. The exposure method according to claim 1, wherein

An exposure method, wherein between the third step and the fourth step, at least a latent image portion of the first alignment mark on the substrate is heated.

3. The exposure method according to claim 1 or 2, wherein

The second alignment mark is formed in a non-shot area on the substrate other than a shot area where the pattern is transferred. The exposure method, wherein in the third step, the first alignment mark is exposed on the sensitive material in the non-shot area.

4. The exposure method according to any one of claims 1 to 3, wherein

The exposure method, wherein the positional relationship information is a positional shift amount between the latent image of the first alignment mark and the second alignment mark.

5. In an exposure method, a pattern on a mask on which a first alignment mark is formed is exposed on a plurality of substrates on each of which a second alignment mark is formed.

A first step of applying a sensitive material to each of the plurality of substrates, and a second step of exposing the first alignment mark to the sensitive material on the first substrate in the plurality of substrates When,

A third step of detecting a concavo-convex distribution of the sensitive material by relatively moving a predetermined probe with respect to a surface of the sensitive material on the first substrate; and A fourth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark; and, based on the positional relationship information, the first substrate in the plurality of substrates. A fifth step of aligning the pattern with a different second substrate, and a sixth step of exposing the pattern onto the second substrate after the alignment is completed;

An exposure method, comprising:

6. The exposure method according to claim 5, wherein

An exposure method, wherein between the first step and the second step, an illumination area on the mask is set so as to substantially illuminate only the first alignment mark.

7. The exposure method according to claim 5 or 6, wherein An exposure method, wherein between the second step and the third step, at least a latent image portion of the first alignment mark on the first substrate is heated.

8. The exposure method according to any one of claims 5 to 7, wherein

The second alignment mark is formed in a non-shot area on the first substrate other than a shot area to which the pattern is transferred, and in the second step, the non-shot area An exposure method, wherein the first alignment mark is exposed on the sensitive material in a region.

9. The exposure method according to any one of claims 5 to 8, wherein

10. An exposure method for exposing a pattern on a mask on which a first alignment mark is formed to a predetermined substrate on which a second alignment mark is formed,

A first step of applying a sensitive material on the predetermined substrate,

A second step of exposing the pattern and the first alignment mark on the sensitive material on the predetermined substrate;

A third step of detecting the unevenness distribution of the sensitive material by relatively scanning a predetermined needle with respect to the surface of the sensitive material;

A fourth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result.

11. The exposure method according to claim 10, wherein

The predetermined substrate is a substrate different from the predetermined substrate; and A fifth step of replacing the board with another board on which the alignment mark of 2 is formed, and

A sixth step of performing an alignment between the another substrate and the pattern based on the positional relationship information obtained in the fourth step;

After the alignment is completed, a seventh step of exposing the pattern on the another substrate,

An exposure method, further comprising:

12. The exposure method according to claim 10 or 11, wherein

The second alignment mark is formed in a shot area on the predetermined substrate where at least the pattern is transferred, and in the second step, the sensitive material in the shot area is formed. An exposure method, wherein the first alignment mark is exposed on the upper surface.

1 3. The exposure method according to claim 1, wherein

In the second step, exposing the pattern to a plurality of shot areas on the predetermined substrate,

In the third step, an arbitrary shot area of the plurality of shot areas is selected, and the tip is relatively scanned, so that the first alignment for the first positioning in the selected shot area is performed. An exposure method comprising detecting a latent image of a mark and the second alignment mark.

14. The exposure method according to any one of claims 10 to 13, wherein at least the first substrate on the predetermined substrate is provided between the second step and the third step. Exposure method characterized by heating the latent image portion of the alignment mark.

15. An exposure method for exposing a pattern on a mask on which a first alignment mark is formed to a substrate on which a second alignment mark is formed, A first step of applying a sensitive material on the substrate,

A second step of exposing the first alignment mark on the sensitive material on the substrate;

A third step of heating at least a latent image portion of the first alignment mark on the substrate;

An exposure method, comprising:

16. The exposure method according to claim 15, wherein

17. The exposure method according to claim 15 or 16, wherein

The second alignment mark is formed in a non-shot area on the substrate other than a shot area to which the pattern is transferred, and in the second step, the second alignment mark is formed in the non-shot area. Exposing the first alignment mark on the sensitive material according to (1).

18. The exposure method according to claim 15 or 16, wherein

The second alignment mark is formed at least in a shot area on the substrate to which the pattern is transferred, and in the second step, the sensitive material in the shot area is formed. An exposure method, comprising exposing the pattern and the first alignment mark thereon.

1 9. The exposure method according to claim 17, wherein

A fifth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result; and And the pattern The sixth step of performing

After the alignment, a seventh step of exposing the pattern on the substrate;

An exposure method, further comprising:

20. The exposure method according to claim 18, wherein

A fifth step of obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result; and A sixth step of exchanging with another substrate on which the second alignment mark is formed, and

A seventh step of aligning the another substrate with the pattern based on the positional relationship information obtained in the fifth step;

An eighth step of exposing the pattern on the another substrate after the alignment is completed;

An exposure method, further comprising:

21. The exposure method according to claim 18 or 20, wherein

In the second step, exposing the pattern to a plurality of shot areas on the substrate,

In the fourth step, by selecting an arbitrary shot area in the plurality of shot areas and relatively scanning the probe, the first alignment mark in the selected shot area is selected. An exposure method comprising: detecting a latent image of the image and the second alignment mark.

22. An exposure system for exposing a pattern on a mask having a first alignment mark formed thereon to a substrate having a second alignment mark formed thereon and coated with a sensitive material,

A light source for illuminating the mask with illumination light; and a light source disposed between the light source and the mask on an optical path of the illumination light; An exposure area setting unit configured to set an illumination area on the mask so as to illuminate only the alignment mark;

A detection device that obtains 5 positional relationship information between the latent image of the first alignment mark and the second alignment mark by relatively scanning a predetermined probe with respect to the surface of the sensitive material;

An exposure system electrically connected to the detection device, comprising: an alignment device that performs alignment between the pattern and the substrate based on the positional relationship information.

2 3. The exposure system according to claim 2 2, wherein

10 A substrate transport line is disposed between the exposure device and the detection device, the substrate transport line serving as a passage for transporting the substrate on which the first alignment mark has been exposed by the exposure device to the detection device. G | light system

24. The exposure system according to claim 23, wherein

15 A heating device is provided on the substrate transport line between the exposure device and the detection device, and heats at least a latent image portion of the first alignment mark on the substrate. Exposure system.

25. The exposure system according to claim 22, wherein:

20. The exposure system according to claim 19, wherein the exposure apparatus includes a projection system for projecting the pattern onto the substrate, and wherein the detection apparatus is disposed near the projection system in the exposure apparatus.

26. The exposure system according to claim 25, wherein

5. An exposure system according to claim 5, further comprising a heating device disposed in the exposure device, for heating at least a latent image portion of the first alignment mark on the substrate.

27. The exposure system according to any one of claims 22 to 26, The second alignment mark is formed in a non-shot area that is an area other than a shot area on the substrate on which the pattern is transferred, and the exposure apparatus includes a responsive material in the non-shot area. An exposure system, wherein the first alignment mark is exposed thereon.

2 8. The given device,

A device manufactured by transferring and exposing the pattern onto the substrate by the exposure system according to any one of claims 22 to 27.

29. Exposure for exposing the pattern on the mask on which the first alignment mark is formed to a plurality of substrates on which the second alignment mark is formed and to which the sensitive material is applied, respectively. In the system,

An exposure apparatus that exposes the first alignment mark on a sensitive material on a first substrate in the plurality of substrates;

By moving a predetermined probe relative to the surface of the sensitive material on the first substrate, the sensitivity of the latent image of the first alignment mark and the second alignment mark is increased. A detecting device for detecting unevenness distribution of the material, and obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result;

An alignment device electrically connected to the detection device, based on the positional relationship information, for performing an alignment between the second substrate different from the first substrate and the pattern;

An exposure system, comprising: exposing the pattern onto the second substrate after the alignment is completed.

30. The exposure system according to claim 29, wherein

The first substrate is disposed between the exposure device and the detection device, and detects the first substrate on which the first alignment mark is exposed by the exposure device. An exposure system comprising a substrate transfer line as a passage for transferring the substrate to an apparatus.

31. The exposure system according to claim 30, wherein

A heating device that is disposed on the substrate transport line between the exposure device and the detection device and that heats at least a latent image portion of the first alignment mark on the first substrate. Characteristic exposure system.

32. The exposure system according to claim 29, wherein

The exposure system, wherein the exposure apparatus includes a projection system for projecting the pattern onto the substrate, and the detection device is arranged near the projection system in the exposure apparatus.

3 3. The exposure system according to claim 3 2, wherein

An exposure system, further comprising a heating device disposed in the exposure device, for heating at least a latent image portion of the first alignment mark on the substrate.

34. The exposure system according to any one of claims 29 to 33, wherein the second alignment mark includes a non-shot area other than a shot area where the pattern on the substrate is transferred. An exposure system, wherein the exposure apparatus exposes the first alignment mark on a sensitive material in the non-shot area.

3 5. For a given device,

35. A device manufactured by transferring and exposing the pattern on the plurality of substrates by the exposure system according to any one of claims 29 to 34.

36. In an exposure system for exposing a pattern on a mask having a first alignment mark formed thereon to a predetermined substrate having a second alignment mark formed thereon and coated with a sensitive material. , An exposure apparatus that exposes the first alignment mark on a sensitive material on the predetermined substrate;

By relative scanning of a predetermined probe with respect to the surface of the sensitive material, the unevenness distribution of the sensitive material due to the latent image of the first alignment mark and the second alignment mark is detected. A detection device that obtains positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result;

An exposure system comprising:

3 7. The exposure system according to claim 36, wherein

Electrically connected to the detection device, based on the positional relationship information, a different substrate from the predetermined substrate and the second alignment mark formed between another substrate and the pattern; Equipped with an alignment device for performing alignment.

An exposure system, wherein the exposure apparatus exposes the pattern on the another substrate after the completion of the alignment.

38. The exposure system according to claim 36 or 37, wherein

The second alignment mark is formed in a shot area on the predetermined substrate where at least the pattern is transferred, and the exposure device is provided on the sensitive material in the shot area. An exposure system for exposing the first alignment mark.

39. The exposure system according to any one of claims 36 to 38, wherein the first alignment mark is disposed between the exposure device and the detection device, and the first alignment mark is provided by the exposure device. An exposure system, comprising: a substrate transfer line as a passage for transferring the exposed substrate to the detection device.

40. The exposure system according to claim 39, wherein A heating device disposed on the substrate transport line between the exposure device and the detection device, the heating device heating at least a latent image portion of the first alignment mark on the substrate. Exposure system.

41. The exposure system according to any one of claims 36 to 38, wherein the exposure apparatus includes a projection system that projects the pattern onto the substrate, and the detection apparatus includes the exposure apparatus. An exposure system, wherein the exposure system is arranged near the projection optical system in an apparatus.

4 2. The exposure system according to claim 4 1, wherein

An exposure system, comprising: a heating device disposed in the exposure device, the heating device heating at least a latent image portion of the first alignment mark on the substrate.

43. The exposure system according to any one of claims 36 to 42, wherein the second alignment mark is located outside of a shot area where the pattern on the substrate is to be transferred. An exposure system, which is formed in a non-shot area that is an area, wherein the exposure apparatus exposes the first alignment mark on a sensitive material in the non-shot area.

4 4. For a given device,

A device manufactured by transferring and exposing the pattern on the substrate by the exposure system according to any one of claims 36 to 43.

45. In an exposure system, a pattern on a mask on which a first alignment mark is formed is exposed on a substrate on which a second alignment mark is formed and a sensitive material is applied.

An exposure apparatus that exposes the first alignment mark on a sensitive material on the substrate;

A portion of the substrate where at least the first alignment mark is exposed A heating device for heating the minute,

By relative scanning a predetermined needle with respect to the surface of the sensitive material, the unevenness distribution of the sensitive material due to the latent image of the first alignment mark and the second alignment mark is detected. A detection device that obtains positional relationship information between the latent image of the first alignment mark and the second alignment mark based on the detection result;

An exposure system comprising:

46. The exposure system according to claim 45, wherein

A substrate transfer line disposed between the exposure device and the detection device, the substrate transfer line serving as a passage for transferring the substrate on which the first alignment mark has been exposed by the exposure device to the detection device; A τ6 system.

47. The exposure system according to claim 46, wherein

The exposure system, wherein the heating device is disposed on the substrate transfer line between the exposure device and the detection device.

48. The exposure system according to claim 47, wherein:

The exposure system according to claim 1, wherein the heating device includes a baking device that performs baking on the sensitive material.

49. The exposure system according to claim 45, wherein:

The exposure system, wherein the exposure apparatus includes a projection system that projects the pattern onto the substrate, and the detection device is disposed near the projection system in the exposure apparatus.

50. The exposure system according to claim 49, wherein

The exposure system, wherein the heating device is disposed in the exposure device.

51. The exposure system according to claim 50, wherein An exposure system, wherein the heating device includes a laser device that irradiates a laser beam onto the substrate.

5 2. For a given device,

A device manufactured by transferring and exposing the pattern on the substrate by the exposure system according to any one of claims 45 to 51.

53. The exposure system according to any one of claims 45 to 52, wherein the exposure apparatus is capable of exposing the pattern to a plurality of shot areas on the substrate,

The detection device selects an arbitrary shot area among the plurality of shot areas, and a latent image of the first alignment mark in the selected shot area and the second shot image. An exposure system for detecting an alignment mark by relatively scanning the probe.

54. A method of manufacturing an exposure system for exposing a pattern on a mask having a first alignment mark formed thereon to a substrate having a second alignment mark formed thereon and coated with a sensitive material. At

A light source for generating illumination light for illuminating the mask,

An illumination area setting unit that is disposed between the light source and the mask on an optical path of the illumination light and sets an illumination area on the mask so as to substantially illuminate only the first alignment mark; When,

By performing relative scanning of a predetermined probe with respect to the surface of the sensitive material, the unevenness distribution due to the latent image of the first alignment mark and the second alignment mark is detected, and the detection result is obtained. A detection unit for obtaining positional relationship information between the latent image of the first alignment mark and the second alignment mark based on

Electrically connected to the detection unit, based on the positional relationship information, An alignment unit for performing alignment between the substrate and the substrate;

A method of manufacturing an exposure system, comprising: assembling images in a predetermined positional relationship.

55. Exposure to expose the pattern on the mask on which the first alignment mark is formed on a plurality of substrates on which the second alignment mark is formed and coated with the sensitive material, respectively. In the method of manufacturing the system,

An exposing unit that exposes the first alignment mark on the sensitive material on the first substrate of the plurality of substrates, and exposes the pattern on each of the plurality of substrates; When,

By performing relative scanning of a predetermined probe with respect to the surface of the sensitive material on the first substrate, unevenness distribution due to the latent image of the first alignment mark and the second alignment mark is obtained. A detecting unit that detects, based on the detection result, information on a positional relationship between the latent image of the first alignment mark and the second alignment mark;

Electrically connected to the detection unit, before the exposure unit exposes the pattern on a second substrate different from the first substrate in the plurality of substrates, based on the positional relationship information, An alignment unit for performing an alignment between the second substrate and the pattern;

56. An exposure system for exposing a pattern on a mask on which a first alignment mark is formed to a predetermined substrate on which a second alignment mark is formed and coated with a sensitive material. In the manufacturing method, an exposure unit that exposes the first alignment mark and the pattern on the sensitive material on the predetermined substrate; By moving a predetermined probe relative to the surface of the sensitive material on the predetermined substrate, the unevenness distribution of the latent image of the first alignment mark and the second alignment mark is obtained. A detecting unit that detects, based on the detection result, information on a positional relationship between the latent image of the first alignment mark and the second alignment mark;

57. A method of manufacturing an exposure system for exposing a pattern on a mask having a first alignment mark formed thereon to a substrate having a second alignment mark formed thereon and coated with a sensitive material. At

An exposure unit that exposes the first alignment mark on the sensitive material on the substrate;

A heating unit that heats at least a portion of the substrate at which the first alignment mark is exposed,