JP3466893B2 - Positioning apparatus and projection exposure apparatus using the same - Google Patents

Positioning apparatus and projection exposure apparatus using the same

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Publication number
JP3466893B2
JP3466893B2 JP32378197A JP32378197A JP3466893B2 JP 3466893 B2 JP3466893 B2 JP 3466893B2 JP 32378197 A JP32378197 A JP 32378197A JP 32378197 A JP32378197 A JP 32378197A JP 3466893 B2 JP3466893 B2 JP 3466893B2
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Japan
Prior art keywords
mark
reticle
detection
glass
detecting
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Expired - Fee Related
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JP32378197A
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Japanese (ja)
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JPH11143087A (en
Inventor
祐一 刑部
庸弘 小太刀
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キヤノン株式会社
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Priority to JP32378197A priority Critical patent/JP3466893B2/en
Priority claimed from KR1019980047977A external-priority patent/KR100308608B1/en
Publication of JPH11143087A publication Critical patent/JPH11143087A/en
Application granted granted Critical
Publication of JP3466893B2 publication Critical patent/JP3466893B2/en
Anticipated expiration legal-status Critical
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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007Alignment other than original with workpiece
    • G03F9/7015Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an alignment apparatus and a projection exposure apparatus using the same, which includes a semiconductor element or C
When manufacturing a device such as a CD or a liquid crystal display device in a photolithography process, a transfer pattern on a reticle (mask) surface is directly exposed by a step-and-repeat method or a step-and-scan method or on an exposure substrate through a projection optical system. It is suitable for exposure transfer or image projection.

[0002]

2. Description of the Related Art Conventionally, in a projection exposure apparatus for manufacturing a device such as a semiconductor element, a circuit pattern on a reticle surface can be projected and exposed on a wafer surface (substrate) with high resolution as the density of integrated circuits increases. Is required.

With the miniaturization of the circuit pattern at this time, it is required at the same time to align the reticle on which the electronic circuit pattern is formed and the wafer with high accuracy. In general, one of the methods for aligning a reticle and a wafer is to detect (observe) the positional information of an alignment mark provided on the wafer surface with an alignment microscope (alignment scope) and use a baseline. There is.

One of the causes of the alignment error when aligning the reticle and the wafer at this time is a so-called baseline error amount of baseline measurement.

FIG. 10 is a schematic view of the main part of a conventional projection exposure apparatus, and FIG. 11 is an explanatory view of the main part of FIG. Figure 1
The outline of the baseline measurement will be described with reference to FIGS.

In FIG. 1, the reticle 1 is held by suction on a reticle stage 6. Further, the projection exposure apparatus has a reticle reference mark 19 which is accurately positioned and attached to the projection optical system 7 for aligning the reticle 1 at a predetermined position. The second mark detecting means 18 has a detection area at a predetermined position within the projection field of the projection optical system 7, and is provided on the reticle 1 and the positional relationship between the reticle 1 and the reticle reference mark 19 in the detection area. The relative positional relationship between the second reticle mark 5 and the second reference mark 14 on the substrate stage 11 is optically detected, and a moving unit is provided. The second mark detecting means 18 measures the first reticle mark 4 marked on the reticle 1 by superimposing it on the reticle reference mark 19 with the reticle reference mark 19 as a reference.
This measurement is called the first measurement. From the measurement result at this time, the deviation amount between the reticle 1 and the reticle reference mark 19 is obtained. On the reference mark plate 12 provided on a part of the substrate stage 11, a first reference mark 13 detectable by the first mark detecting means 17 and a first reference mark 13 detectable by the second mark detecting means 18. 2 reference mark 14, first mark detecting means 17 and second mark detecting means 1
8 are arranged side by side at regular intervals according to the positions of the eight detection areas. The substrate stage 11 is driven and positioned so that the second mark detecting means 18 detects the second reticle mark 5 on the reticle 1 and the second reference mark 14 on the reference mark plate 12. After the positioning of the substrate stage 11, the mutual positional deviation amount between the detection center of the second reticle mark 5 and the second reference mark 14 is measured, and the positional deviation amount is deviated from the mutual position of the reticle 1 and the substrate stage 11. Remember as quantity. The main measurement is called the second measurement.

The deviation amount between the detection center of the first mark detecting means 17 and the first reference mark 13 on the reference mark plate 12 is measured. This is called the third measurement. Based on the results of these three measurements, the relative distance between the reticle reference mark 19 and the detection center of the first mark detecting means 17 is determined as the baseline amount. At this time, the relative positional deviation amount is obtained, the relative distance is measured as the baseline value, and the baseline correction value is obtained.

As described above, in the baseline measurement in the conventional projection exposure apparatus, first, the reticle reference for accurately positioning and attaching the reticle 1 to the predetermined position with respect to the projection optical system 7 is used. The relative position between the mark 19 and the first reticle mark 4 of the reticle 1 is detected (first measurement). Second, the relative position between the second reference mark 14 existing on the reference mark plate 12 provided on a part of the substrate stage 11 and the second reticle mark 5 of the reticle 1 is detected (second measurement). Thirdly, the mark on the substrate stage 11 is optically detected by having a detection center outside the projection field of the projection optical system 7 and at a position apart from the optical axis of the projection optical system 7 by a constant distance. A first positional relationship between a possible detection center of the first mark detecting means 17 and the second reference mark 14 existing on the reference mark plate 12 is obtained.
The relative position of the reference mark 13 is detected (third measurement). From the above three detection results, the distance between the reticle reference mark 19 for aligning the reticle at a predetermined position and the detection center of the first mark detecting means 17, that is, the so-called baseline is obtained. Then, the relative positional deviation amount at this time is detected, and the positional deviation amount is stored in the storage medium as the baseline error amount.

[0009]

Since the baseline measurement in the conventional projection exposure apparatus is performed via the reticle, the drawing error of the reticle may occur as the baseline error. Therefore, it is necessary to prepare a reticle specific to the projection exposure apparatus, which causes inconvenience. In other words, performing the baseline measurement through the reticle peculiar to the apparatus means performing the baseline measurement and the stage correction measurement after the reticle is conveyed to a predetermined position of the exposure apparatus, and as a result, the exposure apparatus and the reticle. It is very time-consuming to manage and the operation of the exposure apparatus is wasteful.

Further, in the conventional technique, the reticle 1 and the reticle reference mark 19, the reticle 1 and the substrate stage 11,
The relative distance between the reticle reference mark 19 and the detection center of the first mark detecting means 17 is obtained as a baseline amount from the three measurement results of the detection centers of the substrate stage 11 and the mark detecting means in the first mark detecting means 17. Therefore, the measurement error of each of the three measurements was included, and there was naturally a limit to improving the accuracy of the baseline measurement. Further, since the above-mentioned 3 measurements are performed, there is naturally a limit in increasing the speed of the baseline measurement process.

Further, it is impossible to perform the baseline measurement through the conventional reticle peculiar to the apparatus, when the loaded reticle is different or when the reticle is not loaded into the apparatus. However, there was a limit to the reduction of the operation time when performing the baseline measurement and the control of the baseline measurement.

In addition, when the reticle is not present at a predetermined position of the exposure apparatus, the baseline measurement and the stage movement correction measurement cannot be performed, which affects the throughput of the exposure apparatus as a whole.

A first invention is a detection center of a first mark detecting means for detecting positional information of a reticle reference mark which is accurately positioned with respect to a projection optical system and a first reference mark provided on a substrate (wafer). The baseline between is calculated by removing the baseline error, and the relative alignment between the reticle and the substrate can be performed while simplifying the control of the baseline measurement and improving the baseline measurement accuracy and the processing speed. An object of the present invention is to provide a position aligning apparatus that can perform projection exposure while appropriately performing the pattern on the reticle surface while maintaining high accuracy on the substrate, and a projection exposure apparatus using the same.

According to the second aspect of the present invention, the reticle reference mark accurately positioned with respect to the projection optical system and the first reference provided on the substrate (wafer) even when the reticle does not exist in the optical path of the exposure apparatus. The baseline between the detection center of the first mark detecting means for detecting the mark position information is obtained by removing the baseline error, simplifying the baseline measurement management, and improving the baseline measurement accuracy and processing speed. A positioning device and a positioning device that can perform projection exposure while appropriately performing relative positioning between the reticle and the substrate while maintaining high accuracy while maintaining high accuracy on the substrate of the pattern on the reticle surface. An object is to provide a projection exposure apparatus.

[0015]

According to a first aspect of the present invention, there is provided an alignment apparatus capable of holding and moving a reticle having a pattern to be exposed and a plurality of alignment marks, and a photosensitive substrate on which the reticle pattern is exposed. A substrate stage, a projection optical system for imaging and projecting the pattern of the reticle onto a projected region of the photosensitive substrate, a reticle having a detection region at a predetermined position in the projection field of the projection optical system, Position detection of at least one of the substrate stage and a mark detection unit including a moving unit that optically detects a relative positional relationship of at least one of the marks on the photosensitive substrate, the reticle, the substrate stage, and the photosensitive substrate. And a first plane-parallel glass having a mark for performing the process, and arranged on the optical axis between the reticle and the projection optical system, and the first flat plane glass. Detection of a mark on a flat glass has a reticle provided with a moving means in the optical path of the detection light and a second parallel flat glass having substantially the same thickness, and the second parallel flat glass is a mark on the first parallel flat glass. When not present in the detection light optical path of the mark on the first parallel plane glass, when the reticle is inserted in the detection light optical path of the mark on the first parallel plane glass, the reticle is present in the detection light optical path of the mark on the first parallel plane glass. Is moving out of the exposure range and out of the optical path of the mark detection light, and at least one of the reticle, the substrate stage, and the photosensitive substrate is relatively moved by using the mark provided on the first plane-parallel glass. It is characterized by performing various positioning.

According to a second aspect of the present invention, there is provided a position aligning apparatus which has a reticle having a pattern to be exposed and a plurality of marks for alignment, a substrate stage which is movable while holding a projected photosensitive substrate on which the pattern of the reticle is exposed. A projection optical system for image-projecting the pattern of the reticle onto a projection area of the photosensitive substrate, a detection area at a predetermined position within a projection field of the projection optical system, and the reticle within the detection area, the substrate stage, Then, for positioning at least one of the mark detecting means having a moving means for optically detecting the relative positional relationship of at least one of the marks on the photosensitive substrate, the reticle, the substrate stage, and the photosensitive substrate. A first parallel plane glass having a mark and arranged on the optical axis between the reticle and the projection optical system, and the mark detecting means is a moving hand. When the reticle does not exist in the optical path of the mark detection means detection light, the first lens has an optical effect of the detection light of the mark detection means due to the absence of the reticle. When the reticle exists in the optical path of the mark detection light, the first lens has a positioning means for correcting, and the first lens has a positioning means for correcting the optical influence of the detection light of the mark detection means due to the existence of the reticle. It is characterized in that at least one of the reticle, the substrate stage, and the photosensitive substrate is relatively positioned using the mark provided on the first parallel flat glass.

According to a third aspect of the present invention, in the first or second aspect of the present invention, the first parallel plane glass is a light including a detection mark portion and a projection exposure light incident range of an actual element pattern on a reticle where no mark exists. It is characterized in that it is configured separately from the shaft center portion.

The invention of claim 4 is characterized in that, in the invention of claim 1, the second parallel flat glass has a control means for driving the same.

The invention of claim 5 is characterized in that in the invention of claim 2, the mark detecting means has a control means for driving the first lens having a moving means.

According to a sixth aspect of the present invention, in the invention according to any one of the first to fifth aspects, the mark detecting means is provided on the reticle, the parallel flat glass, the substrate stage, and the photosensitive substrate within the detection area. It is characterized in that a moving means for optically detecting a relative positional relationship of at least one of the marks is provided.

According to a seventh aspect of the present invention, there is provided a position aligning apparatus which comprises a reticle having a pattern to be exposed and a plurality of marks for alignment, a substrate stage which holds and moves a photosensitive substrate on which the pattern of the reticle is exposed, and the reticle. A projection optical system for image-forming and projecting the pattern on the projected area of the photosensitive substrate, the reticle, a substrate stage, and a mark for performing relative positioning of at least one of the photosensitive substrate. A first parallel plane glass arranged on the optical axis between the projection optical systems, and at least one of the reticle, the substrate stage, and the photosensitive substrate is positioned by using a mark provided on the parallel plane glass. A second parallel plane glass having substantially the same thickness as the reticle in the detection optical path of the mark on the first parallel plane glass. Removably provided, the second parallel flat glass is inserted in the detection optical path of the mark on the first parallel flat glass when the reticle is not present in the detection optical path of the mark on the first parallel flat glass. When the reticle exists in the detection optical path of the mark on the first parallel flat glass, it is retracted outside the detection optical path of the mark on the first parallel flat glass.

According to an eighth aspect of the invention, there is provided a position aligning apparatus which comprises a reticle having a pattern to be exposed and a plurality of marks for alignment, a substrate stage which holds and moves a photosensitive substrate on which the pattern of the reticle is exposed, and the reticle. A projection optical system for image-forming and projecting the pattern on the projected area of the photosensitive substrate, the reticle, a substrate stage, and a mark for performing relative positioning of at least one of the photosensitive substrate. Parallel plane glass arranged on the optical axis between the projection optical systems, and at least one of the reticle, the substrate stage, and the photosensitive substrate is positioned using a mark provided on the parallel plane glass. A positioning device having a detection area at a predetermined position in the projection field of the projection optical system, and the reticle in the detection area,
Second mark detecting means including a moving means for optically detecting a relative positional relationship of at least one of the parallel flat glass, the substrate stage, and the mark on the photosensitive substrate,
The predetermined reticle mark on the reticle and the predetermined second mark among the marks formed outside the projection exposure light incident range of the actual element pattern surface on the reticle on the parallel flat glass are referred to as the second reticle mark. Second positioning means for detecting the second mark and the first reticle mark so that the second mark and the first reticle mark have a predetermined positional relationship, and the second mark detecting means for detecting on the parallel flat glass. The second mark detecting means includes means for detecting a positional deviation amount between a mark detection center and a detection mark detecting center on the reticle, and storing the deviation amount as a deviation amount between the parallel flat glass and the reticle position. An optical change of the second mark detecting means, which has a first lens movable on the optical axis, is generated depending on whether or not the reticle exists in the detection optical path of the second mark detecting means. Supplement It is characterized in that it is.

According to a ninth aspect of the present invention, there is provided an alignment apparatus which exposes a pattern on a reticle onto a substrate via a projection optical system, wherein a reference mark plate having a reference mark is mounted and the substrate is mounted on the reference mark plate. A stage that can be held and moved,
A first mark corresponding to the reference mark and the reticle
And a second mark for aligning the reticle, which is fixed with respect to the projection optical system and is arranged on the reticle.
A parallel plane glass disposed between a position and a projection optical system; a first position detection system having a detection reference and detecting a relative position between the detection reference and the reference mark ; The reference mark and the first mark are detected by irradiating detection light from the reticle side of the optical system and detecting the reference mark on the reference mark plate from the reticle side of the projection optical system via the projection optical system. and a second position detection system for detecting the relative position between, has been detected by the relative position and the second position detection system between the reference mark and said detected detection reference by the first position detection system wherein It is characterized in that the baseline value is obtained based on the relative position between the reference mark and the first mark.

According to a tenth aspect of the invention, in the invention of the ninth aspect, the reference mark is the detection mark of the first position detection system.
The first fiducial mark corresponding to the projecting standard and the parallel flat
A second fiducial mark corresponding to the first mark on the face glass
It is characterized by including .

According to an eleventh aspect of the invention, in the ninth or tenth aspect of the invention, the detection optical path of the first position detection system is the
It is characterized by passing through a projection optical system .

According to a twelfth aspect of the present invention, there is provided a device manufacturing method,
The exposure apparatus according to any one of claims 9 to 11 is used.
The pattern on the reticle through the projection optics to the wafer
The wafer is exposed to light, and then the wafer is processed to develop the device.
It is characterized by being built .

[0027]

[0028]

[0029]

[0030]

[0031]

[0032]

[0033]

1 is a schematic diagram of a configuration of an exposure apparatus using an alignment apparatus according to Embodiment 1 of the present invention. FIG. 2 is an explanatory view of a main part of a part of FIG. In FIGS. 1 and 2, the space between the parallel flat glass 3 and the reticle 1 forming the exposure apparatus is actually a minute space. However, in order to make the structure of the present invention easier to understand, the schematic diagram is intentionally used. Are shown apart.

Further, in the figure, two alignment systems are indicated by the same reference numerals.

In FIG. 1, on a reticle 1, a pattern area (reticle pattern area) 2 in which a circuit pattern or the like to be exposed on a photosensitive substrate (wafer) W is formed, and a parallel pattern which is a feature of the exposure apparatus of the present invention. A first reticle mark 4 for alignment with a plane parallel glass 3 as a plane member is provided. The reticle stage 6 that holds the reticle 1 by suction has a structure capable of two-dimensional movement in the X, Y, and θ directions by a control unit (drive control system) that controls a drive mechanism such as a motor. On the optical axis 8 between the reticle 1 and the projection optical system 7, the parallel flat glass 3 is
It is fixed and positioned at a predetermined position with respect to the projection optical system 7.

The plane-parallel glass 3 has marks for positioning the reticle, the substrate stage and the photosensitive substrate. Specifically, a second mark 10 is provided on the parallel flat glass 3 as an index mark serving as a reference when aligning the first reticle mark 4 on the reticle 1, and a part of the substrate stage 11 is further provided. The first mark 9 is provided as an index mark serving as a reference when aligning the second reference mark 14 on the reference mark plate 12 configured as described above. The first mark 9 and the second mark 10 are marked on the actual element pattern surface of the reticle 1 outside the incident range of the projection exposure light. The second marks 10 are provided on the opposite sides of the center of the plane-parallel glass 3, one by one, so that the center of the mark, that is, the optical axis of the projection optical system 7 is obtained. On the substrate stage 11 that holds and fixes the photosensitive substrate W, vertical drive for aligning the photosensitive substrate surface with the image plane of the projection optical system 7, image plane defocusing correction drive, alignment of the photosensitive substrate, and yawing control. Control means is provided for controlling a drive mechanism for rotationally driving the photosensitive substrate.

Further, a movable mirror 16 for reflecting the beam from the laser interferometer 15 is fixed on two sides of the substrate stage 11. The beam emitted from the laser interferometer 15 is orthogonal to the optical axis 8 of the projection optical system 7, and the position and movement amount of the substrate stage 11 are sequentially measured by the laser interferometer 15. In order to align the substrate stage 11 with the plane-parallel glass 3, a part of the substrate stage 11 can detect the first reference mark 13 and the second mark detecting device 1 which can be detected by the first mark detecting device 17.
The second reference mark 14 that can be detected by
The reference mark plate 12 is fixedly installed side by side at a constant interval according to the detection area positions of the mark detecting means 17 and the second mark detecting means 18.

The two-dimensional orthogonality of the reference mark plate 12 is
It is fixed so as to match the two-dimensional orthogonality of the substrate stage 11 as much as possible. The first mark detecting means 17 has a detection center outside the projection visual field of the projection optical system 7 and at a position apart from the optical axis 8 of the projection optical system 7 by a predetermined distance, and the photosensitive substrate The detection means is capable of optically detecting the mark on W or the substrate stage 11 and the photosensitive substrate W. The second mark detecting means 18 for optically detecting the relative positional relationship between the reticle 1, the plane parallel glass 3 and the marks on the substrate stage 11 has a detection area at a predetermined position within the projection field of the projection optical system 7. However, it is possible to measure in the detection area, and a moving means is provided.

FIG. 2 is a schematic view of reticle alignment measurement, baseline measurement, and substrate stage running correction in the exposure apparatus of the present invention.

First, details of the reticle alignment measurement of the exposure apparatus of the present invention are shown below.

First, the alignment illumination light (not shown) allows the illumination light AL for alignment to pass through the flexible light transmission path, and the second is provided on the plane-parallel glass 3 which is accurately positioned and attached to the projection optical system 7. The mark 10 is illuminated from the projection optical system 7 side. The detection illumination light AL that has passed through the second mark 10 illuminates the first reticle mark 4 on the reticle 1. The detection light that has passed through the first reticle mark 4 passes through the detection optical system and is captured by the camera that converts the detection signal into an image signal. The captured alignment mark image 4a is converted into a video signal. Next, image processing is performed to detect the amount of relative deviation between the mark positions of the reticle 1 and the plane parallel glass 3. The detected deviation amount of the reticle 1 is calculated by the calculation means and is taken into the storage medium. The correction drive amount of the reticle is numerically calculated from the calculated deviation amount of the reticle 1, and the correction drive amount of the reticle stage 6 is transmitted to the drive mechanism (second positioning means) of the reticle stage 6 to which the reticle is fixed by suction. , The reticle position is corrected.

Here, the second mark detecting means 18 causes the second mark 10 on the plane-parallel glass 3 and the first reticle mark 4 to overlap each other on the processing screen (that is, aligns the reticle and the plane-parallel glass). Positioning is performed by the second positioning means.

Next, details of the baseline measurement in the exposure apparatus of the present invention will be shown below.

In the exposure apparatus of the present invention, the baseline value is obtained by the arithmetic processing of the following two measurement results.

The first measurement is a measurement for detecting the relative positional relationship between the parallel flat glass 3 and the reference mark plate 12 on the substrate stage 11, and the details of the measurement are as follows. The second mark detecting means 18 and the substrate stage 11 located above the reticle 1 are driven by the drive mechanism (first positioning means) to a predetermined position for baseline measurement, and the parallel flat glass 3 and the reference mark plate are driven. Focusing drive 12 is performed. The second mark detecting means 18 detects the detection center of the first mark 9 on the plane-parallel glass 3 and the reference mark plate 1.
The amount of relative positional deviation from the second reference mark 14 above 2 is detected.

The displacement amount is stored in the storage medium as the relative displacement amount between the parallel flat glass 3 and the reference mark plate 12. By the reticle alignment measurement,
The reticle 1 is positioned at a predetermined position, and when performing the baseline measurement, the first mark 9 on the plane-parallel glass 3 is positioned below the transparent pattern portion of the reticle 1,
The detection light 23 from the upper portion of the reticle is transmitted through the transmission pattern portion of the reticle, and the first mark 9 on the plane-parallel glass 3 is detected.
Irradiate.

The second measurement is a measurement for detecting the relative positional relationship between the reference mark plate 12 on the substrate stage 11 and the detection center of the first mark detection means 17, and the details of the measurement are as follows. Is. After completion of the first measurement, the substrate stage 11 is finely driven in the optical axis direction of the projection optical system 7 to bring the first reference mark 13 on the reference mark plate 12 into focus with the detection center of the first mark detecting means 17. I do. The first mark detecting means 17 detects the relative positional deviation amount between the detection center of the first mark detecting means 17 and the first reference mark 13 on the reference mark plate 12, and stores the deviation amount in a storage medium.

After the first measurement and the second measurement are repeated a predetermined number of times, the arithmetic processing is performed in the storage medium, and the detection center of the first mark detecting means 17 and the parallel flat glass 3
Calculate the calculated value of the relative positional deviation with the first mark 9 above,
The relative positional deviation Δ amount is stored in the storage medium as a baseline error amount.

Here, the baseline error amount corresponds to the relative difference distance between the center of the first mark detection 9 and the scope reference mark (detection reference) formed in the first mark detecting means 17.

[0050]

[0051]

[0052]

Here, the relative alignment of the parallel flat glass 3 and the substrate stage 11 by the second mark detecting means 18 is performed by the first mark 9 provided on the parallel flat glass 3 and the second mark provided on the substrate stage 11. The reference mark 14 is used to perform the first positioning means.

In the exposure apparatus using the alignment apparatus of the present invention, the substrate stage 1
1. It has a control mechanism (first positioning means, second positioning means) capable of correcting and driving the reticle 1, and can correct and drive the substrate stage 11 and the reticle 1 to an optimum position.

The parallel flat glass in the exposure apparatus of the present invention is not only integrated with the mark as shown in FIG. 1, but also a parallel flat glass peripheral portion 20 in which the mark is designed as shown in FIG. 3, for example. It is also possible to separately configure the central portion 21 of the plane-parallel glass below the optical axis of the projection optical system 7. By separating the parallel flat glass into the mark design portion and the portion below the optical axis as described above, the optical influence of the actual element pattern portion to be exposed under the projection projection optical system by inserting the parallel flat glass is It can be deleted or reduced by adjusting the parallel flat glass 21 of the part. Also, the minute thermal deformation of the parallel flat glass caused by the absorption of the illumination light by the marks on the parallel flat glass can be reduced by separating the exposure center part and the mark part, and the exposure due to the minute thermal deformation of the parallel flat glass. It is possible to prevent the occurrence of pattern shift.

As described above, according to this embodiment, the reticle (or photomask) having a pattern to be exposed and a plurality of marks for alignment is held, and the movable reticle stage and the pattern of the reticle are exposed. On the optical axis between the reticle and the projection optical system, which includes a substrate stage that holds and moves the photosensitive substrate, and a projection optical system that images and projects the pattern of the reticle onto a projection area of the photosensitive substrate. By configuring a parallel plane glass having marks for positioning the reticle and the substrate stage and the photosensitive substrate, it becomes possible to perform the measurement without using the reticle when performing the baseline measurement. By removing the baseline error due to the reticle drawing error, the exposure substrate is accurately aligned with a predetermined position. Then, the pattern on the reticle surface is projected and exposed on the wafer, and then the wafer is subjected to a developing process to manufacture a device.

FIG. 4 is a schematic view of the essential portions of Embodiment 2 of the present invention,
FIG. 5 is an explanatory view of a main part of a part of FIG.

The present embodiment is different from the first embodiment shown in FIG. 1 in that the first parallel plane having marks for positioning the reticle 1, the substrate stage 11 and the photosensitive substrate W on the optical axis between the reticle and the projection optical system. The glass (corresponding to the parallel flat glass 3 in FIG. 1) 3a and the second parallel flat glass provided with the moving means are provided above the reticle in the optical path of the mark detection light on the first parallel flat glass 3a. When performing the baseline measurement, regardless of the existence of the reticle in the optical path of the mark detection light, the baseline measurement can be performed without using the reticle 1. As a result, the baseline measurement error due to the drawing error of the reticle can be eliminated. Moreover, baseline measurement and substrate stage correction measurement can be performed even when the reticle is not present in the exposure apparatus, improving the throughput of the entire apparatus. That point is only is different, other configurations are the same.

Next, the structure of the present embodiment will be sequentially described although it partially overlaps with the structure of the first embodiment.

In FIGS. 4 and 5, a minute space is actually formed between the reticle 1 and the first plane-parallel glass 3a that constitutes the exposure apparatus, but for easy understanding of the structure of the present invention. In the schematic diagram, they are intentionally separated.

Further, in the figure, two alignment systems are indicated by the same reference numerals.

In FIG. 1, a pattern area (reticle pattern area) 2 in which a circuit pattern or the like to be exposed on a photosensitive substrate (wafer) W is formed on a reticle 1, and a feature of the exposure apparatus of the present invention. The first reticle mark 4 for alignment with one parallel flat glass 3a is provided. The reticle stage 6 that holds the reticle 1 by suction has a structure capable of two-dimensional movement in the X, Y, and θ directions by a drive control system (not shown) such as a motor. On the optical axis 8 between the reticle 1 and the projection optical system 7, a first plane-parallel glass 3a is fixed and positioned at a predetermined position with respect to the projection optical system 7.

The first plane parallel glass 3a is provided with marks for positioning the reticle stage, the substrate stage, and the photosensitive substrate. Specifically, a second mark 10 is provided on the first plane-parallel glass 3a as an index mark that serves as a reference when the first reticle mark 4 on the reticle 1 is aligned, and further, the second mark 10 of the substrate stage 11 is provided. The first mark 9 is provided as an index mark that serves as a reference when aligning the second reference mark 14 on the reference mark plate 12 that is partially configured.

The first mark 9 and the second mark 10
Are marked at positions outside the incident range of the projection exposure light on the actual element pattern surface of the reticle 1. On the substrate stage 11 that holds and fixes the photosensitive substrate W, vertical drive for aligning the photosensitive substrate surface with the image plane of the projection optical system 7, image plane defocusing correction drive, alignment of the photosensitive substrate, and yawing control. A drive mechanism for rotating the photosensitive substrate is provided.

Further, a movable mirror 16 for reflecting the beam from the laser interferometer 15 is fixed on two sides of the substrate stage 11. The beam emitted from the laser interferometer 15 is orthogonal to the optical axis 8 of the projection optical system 7, and the position and movement amount of the substrate stage 11 are sequentially measured by the laser interferometer 15. In order to align the substrate stage 11 with the first plane-parallel glass 3a, a part of the substrate stage 11 has a first reference mark 13 and a second mark detecting means 18 which can be detected by the first mark detecting means 17.
The reference mark plate 12 having the second reference marks 14 that can be detected by the first mark detection means 17 and the second mark detection means 18 arranged side by side at a fixed interval according to the detection area positions is fixed. There is.

The two-dimensional orthogonality of the reference mark plate 12 is
It is fixed so as to match the two-dimensional orthogonality of the substrate stage 11 as much as possible. The first mark detecting means 17 has a detection center outside the projection visual field of the projection optical system 7 and at a position apart from the optical axis 8 of the projection optical system 7 by a predetermined distance, and the photosensitive substrate The detection means is capable of optically detecting the mark on W or the substrate stage 11 and the photosensitive substrate W. The second mark detecting means 18 for optically detecting the relative positional relationship between the reticle 1, the first parallel flat glass 3a and the marks on the substrate stage 11 is a detection area at a predetermined position within the projection field of the projection optical system 7. And can measure in the detection area, and is equipped with a moving means.

Further, the second mark detecting means detection light 2
A second parallel flat glass 3b having a moving means is provided above the reticle 1 in the three optical paths. When the reticle 1 is not present in the optical path of the second mark detecting means detecting light 23, the second parallel flat glass 3b is located above the reticle 1 in the optical path of the second mark detecting means detecting light 23. When the reticle 1 is inserted by the drive control system of the glass 3b and the reticle 1 is present in the optical path of the second mark detecting means detection light 23, it is outside the projection exposure range and the second mark detecting means detection light 2
It is moved to the outside of the three optical paths by the drive control system of the second parallel flat glass 3b.

FIG. 5 is a schematic diagram of reticle alignment measurement, baseline measurement, and substrate stage running correction in the exposure apparatus of the present invention.

First, details of the reticle alignment measurement of the exposure apparatus of the present invention will be described below.

First, the illumination light AL for alignment passes from the alignment light source (not shown) through the flexible light transmission path, and is provided on the first parallel flat glass 3a accurately positioned and attached to the projection optical system 7. The second mark 10 is illuminated from the projection optical system 7 side. The detection illumination light AL that has passed through the second mark 10 illuminates the first reticle mark 4 on the reticle 1. The detection light that has passed through the first reticle mark 4 passes through the detection optical system and is captured by the camera that converts the detection signal into an image signal. The captured alignment mark image 4a is converted into a video signal. Next, image processing is performed to detect the amount of relative deviation between the mark positions of the reticle 1 and the first plane-parallel glass 3a. The detected shift amount of the reticle 1 is calculated and taken into the storage medium. The correction drive amount of the reticle is numerically calculated from the calculated deviation amount of the reticle 1, and the correction drive amount of the reticle stage 6 is transmitted to the drive mechanism (second positioning means) of the reticle stage 6 to which the reticle is fixed by suction. , The reticle position is corrected.

Next, details of the baseline measurement in the exposure apparatus of the present invention will be shown below.

In the exposure apparatus of the present invention, the baseline value is obtained by the calculation processing of the following two measurement results.

The first measurement is a measurement for detecting the relative positional relationship between the first parallel flat glass 3a and the fiducial mark plate 12 on the substrate stage 11, and the details of the measurement are as follows. When the reticle 1 is present in the optical path of the second mark detecting means detection light 23, the second mark detecting means 18 and the substrate stage 11 located above the reticle 1 are subjected to a predetermined baseline measurement. To the position of the parallel flat glass 3 by the drive mechanism (first positioning means).
Then, the reference mark plate 12 is driven for focusing. The second mark detecting means 18 detects the relative positional deviation amount between the detection center of the first mark 9 on the first plane-parallel glass 3a and the second reference mark 14 on the reference mark plate 12.

The amount of the deviation is set to the first parallel flat glass 3
It is stored in the storage medium as the relative positional deviation amount between a and the reference mark plate 12. Note that the reticle 1 is positioned at a predetermined position by the reticle alignment measurement,
When performing the baseline measurement, the first mark 9 on the first plane-parallel glass 3a is positioned below the transmission pattern portion of the reticle 1, and the detection light 23 from the upper portion of the reticle transmits the transmission pattern portion of the reticle, 1 parallel flat glass 3a
The first mark 9 above is illuminated.

Second mark detecting means 23 When the reticle 1 is not present in the optical path of the detecting light 23, the second mark detecting means 1
8 and the substrate stage 11 are driven to a predetermined position for baseline measurement, and the first parallel plane glass 3a and the reference mark plate 12 are focused and driven. Second mark detecting means 1
8, the first mark 9 on the first plane-parallel glass 3a
Detection center of the second reference mark 14 on the reference mark plate 12
The amount of relative positional deviation with respect to is detected. The displacement amount is stored in the storage medium as the relative displacement amount between the first parallel flat glass 3a and the reference mark plate 12. It should be noted that the second mark detecting means detection light 23 transmits the second parallel flat glass 3b, thereby reducing or eliminating the optical influence caused by not transmitting the reticle 1.

The first measurement can be performed by the configuration of the second mark detecting means 18 of the exposure apparatus shown in FIG. According to the configuration of the second mark detecting means 18 of FIG. 6, the drive control section 26 having the drive mechanism and the drive control system and the first lens 25 are configured in the second mark detecting means 18, and the reticle is the above-mentioned. When the second mark detecting means detection light 23 does not exist in the optical path, the first lens moves to a position for correcting the optical influence of the second mark detecting means detection light 23 due to the absence of the reticle, and the reticle. Is the second
When the mark detection means 23 of the light exists in the optical path,
The lens moves to a position where the optical influence of the detection light 23 of the second mark detecting means 18 due to the presence of the reticle is corrected. As a result, substantially the same optical correction effect as that of the exposure apparatus shown in FIG. 4 which constitutes the second parallel flat glass 3b can be obtained.

The second measurement is a measurement for detecting the relative positional relationship between the reference mark plate 12 on the substrate stage 11 and the detection center of the first mark detecting means 17, and the details of the measurement are as follows. Is. After completion of the first measurement, the substrate stage 11 is finely driven in the optical axis direction of the projection optical system 7 to bring the first reference mark 13 on the reference mark plate 12 into focus with the detection center of the first mark detecting means 17. I do. The first mark detecting means 17 detects the relative positional deviation amount between the detection center of the first mark detecting means 17 and the first reference mark 13 on the reference mark plate 12, and stores the deviation amount in a storage medium.

After repeating the first measurement and the second measurement a predetermined number of times, arithmetic processing is performed in the storage medium to detect the center of detection of the first mark detecting means 17 and the first parallel flat glass 3a. The calculated value of the relative positional deviation amount with respect to the one mark 9 is obtained, and the relative positional deviation amount Δ is stored in the storage medium as the baseline error amount.

[0079]

[0080]

[0081]

By the reticle alignment measurement,
The reticle 1 is positioned at a predetermined position, and when performing the measurement, the first mark 9 on the first plane-parallel glass 3a is positioned below the transparent pattern portion of the reticle 1, and the second mark from above the reticle 1 is positioned. Mark detection means detection light 23
Passes through the transmission pattern portion of the reticle 1 and irradiates the first mark 9 on the first plane-parallel glass 3a.

When the reticle 1 does not exist in the optical path of the second mark detecting means detection light 23, the second parallel flat glass 3b is passed through the second mark detection light 2 as in the baseline measurement.
The second mark detection means detection light 23
By transmitting the light through the second parallel flat glass 3b, it is possible to reduce or erase the optical influence caused by not transmitting the reticle 1.

The second mark detecting means 1 shown in FIG.
In the exposure apparatus of FIG.
When the mark detecting means 23 does not exist in the optical path of the detection light, the first lens is the second lens due to the absence of the reticle.
When the reticle is in the optical path of the second mark detecting means detecting light 23 after moving to a position for correcting the optical influence of the mark detecting means detecting light 23, the first lens is due to the existence of the reticle. It moves to a position where the optical effect of the detection light 23 of the second mark detecting means 18 is corrected. As a result, substantially the same optical correction effect as that of the exposure apparatus having the second parallel flat glass 3b can be obtained.

The exposure apparatus of the present invention has a control mechanism capable of correcting and driving the substrate stage and the reticle on the basis of the above-described measurement results of the respective positional deviation amounts, so that the substrate stage and the reticle can be corrected and driven to the optimum positions.

The exposure apparatus of FIG. 4 has a control mechanism capable of correcting and driving the second parallel flat glass 3b to the optimum position where the above optical correction is possible.

The exposure apparatus of FIG. 6 has a control mechanism capable of correcting and driving the first lens having the moving means in the second mark detecting means 18 to the optimum position capable of the above optical correction. .

The first parallel flat glass 3a newly constructed in the exposure apparatus of the present invention is not only the integrated type with the mark as shown in FIG. 5, but also the first parallel flat glass with the mark designed as shown in FIG. It is also possible to separately configure the flat glass peripheral portion 20a and the first parallel flat glass central portion 21a below the optical axis of the projection optical system 7. By separating the first parallel plane glass 3a into the mark design portion and the portion below the optical axis as described above, the actual element pattern portion to be exposed under the projection optical system by inserting the first parallel plane glass 3a The optical influence can be eliminated or reduced by adjusting the first parallel flat glass 3a in the central portion. Also, the first
The minute thermal deformation of the first parallel flat glass caused by the absorption of the illumination light by the mark on the parallel flat glass can be reduced by separating the exposure center portion and the mark portion. It is also possible to prevent the exposure pattern from shifting due to thermal deformation.

An embodiment of a method of manufacturing a semiconductor device using this system will be described below.

FIG. 8 is a flow chart of a method of manufacturing a device (semiconductor chip such as IC or LSI, liquid crystal panel, CCD or the like) of the present invention. This will be described.

In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask manufacturing), a mask having the designed circuit pattern is manufactured.

On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon.

Step 4 (wafer process) is called a pre-process, and the prepared mask (reticle) 3 and wafer 7 are used.
Is used to form an actual circuit on the wafer by a lithography technique. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer manufactured in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), etc. including.

In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

FIG. 9 is a detailed flowchart of the wafer process.

In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface.

In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step 15
In (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the above-described exposure apparatus.

In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist are scraped off. In step 19 (resist stripping), the resist that is no longer needed after etching is removed.

By repeating these steps, multiple circuit patterns are formed on the wafer.

By using the manufacturing method of this embodiment, it is possible to easily manufacture a highly integrated device which has been difficult to manufacture in the past.

[0101]

According to the present invention, as described above, the first position detecting means detects the position information of the reticle reference mark accurately positioned with respect to the projection optical system and the first reference mark provided on the substrate (wafer). The baseline between the detection center of the mark detection means is obtained by removing the baseline error, the baseline measurement is simplified, the baseline measurement accuracy is improved, and the processing speed is improved. It is possible to achieve a position aligning device capable of performing projection exposure while appropriately performing the relative position alignment of the reticle and maintaining high accuracy of the pattern on the reticle surface on the substrate, and a projection exposure apparatus using the position aligning device. .

Even when the reticle does not exist in the optical path of the exposure apparatus, the use of the second parallel flat glass simplifies the control of the baseline measurement, improves the baseline measurement accuracy, and improves the processing speed. An improved alignment apparatus and a projection exposure apparatus using the same can be achieved.

In addition, according to the present invention, since the reticle drawing error component and the reticle measurement component are deleted from the baseline measurement component, the baseline measurement can be performed without being affected by various reticle accuracy. Improvement of measurement accuracy can be expected.

Further, in the past, when performing the baseline measurement, the value obtained by the arithmetic processing of the three measurement components is
The measurement processing speed can be improved by detecting the baseline measurement value by the calculation processing of the two measurement components, and the measurement error due to various baseline measurement components can be reduced.

Also, regardless of the reticle, since the baseline measurement is performed using the parallel plane glass fixed to the apparatus as a reference, it is not necessary to manage the reference reticle, which was required for the conventional baseline measurement.

Furthermore, since the exposure apparatus of the present invention can perform the baseline measurement without using the reticle,
The reticle exchange and the baseline measurement can be performed in parallel, which has the effect of improving the throughput of the exposure apparatus.

Further, by constructing the optical correction mechanism for correcting the optical influence when the reticle is not inserted in the exposure apparatus, optimum baseline measurement is performed regardless of the presence or absence of the reticle in the exposure apparatus. It is possible.

[Brief description of drawings]

FIG. 1 is a schematic view of a main part of a first embodiment of the present invention.

FIG. 2 is an explanatory view of a main part of a part of FIG.

FIG. 3 is a schematic diagram showing an outline of reticle alignment measurement, baseline measurement, and substrate stage running correction in the exposure apparatus of the present invention.

FIG. 4 is a schematic view of a main part of a second embodiment of the present invention.

FIG. 5 is an explanatory view of a main part of a part of FIG.

FIG. 6 is a schematic view of a main part of a third embodiment of the present invention.

7 is an explanatory view of a main part of a part of FIG.

FIG. 8 is a flowchart of a device manufacturing method of the present invention.

FIG. 9 is a flowchart of a device manufacturing method of the present invention.

FIG. 10 is a schematic view of a main part of a conventional alignment device.

11 is an explanatory view of a main part of a part of FIG.

[Explanation of symbols]

1 reticle 2 Reticle pattern area 3 parallel flat glass 4 First reticle mark 5 Second reticle mark 6 Reticle stage 7 Projection optical system 8 optical axes 9 First mark 10 Second mark 11 Substrate stage 12 Reference mark plate 13 First standard mark 14 Second standard mark 15 Laser interferometer 16 Moving mirror 17 First mark detecting means 18 Second mark detecting means 19 Reticle reference mark 20 Peripheral plane glass periphery 21 Central part of parallel flat glass 22 First Mark Detection Means Detection Light 23 Second Mark Detection Means Detection Light 3a First parallel flat glass 3b Second parallel flat glass 25 First lens 26 Drive controller

─────────────────────────────────────────────────── ─── Continuation of front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/027

Claims (12)

(57) [Claims]
1. A reticle having a pattern to be exposed and a plurality of marks for alignment, a substrate stage capable of holding and moving a photosensitive substrate on which the pattern of the reticle is exposed, and a pattern of the reticle covering the photosensitive substrate. At least one of a projection optical system for forming an image on the projection area, a detection area at a predetermined position within a projection field of the projection optical system, and the reticle, the substrate stage, and a mark on the photosensitive substrate in the detection area. The reticle and the projection optics have a mark for positioning at least one of a reticle, a substrate stage, and a photosensitive substrate, the mark detecting means having a moving means for optically detecting one relative positional relationship. A first parallel plane glass arranged on the optical axis between the systems, and a moving means in a detection light optical path of the mark on the first parallel plane glass. A second parallel plane glass having substantially the same thickness as the reticle provided, the second parallel plane glass being the first parallel plane glass when the reticle is not in the detection light optical path of the mark on the first parallel plane glass. When the reticle is inserted in the upper part of the reticle in the optical path of the mark detection light on the flat glass and the reticle is in the optical path of the mark detection light on the first parallel flat glass, it moves out of the exposure range and out of the optical path of the mark detection light. The alignment device characterized in that at least one of the reticle, the substrate stage, and the photosensitive substrate is relatively positioned using a mark provided on the first parallel flat glass. .
2. A reticle having a pattern to be exposed and a plurality of marks for alignment, a substrate stage capable of holding and moving a projected photosensitive substrate on which the reticle pattern is exposed, and the reticle pattern being the photosensitive substrate. Of the reticle, the substrate stage, and the mark on the photosensitive substrate, which has a detection area at a predetermined position in the projection field of the projection optical system At least one of a reticle, a substrate stage, and a photosensitive substrate, and a mark for positioning at least one of the reticle and the reticle. A first parallel plane glass arranged on the optical axis between the projection optical systems, and the mark detecting means has a first moving means.
When the reticle has a lens and does not exist in the optical path of the detection light of the mark detection means, the first lens has positioning means for correcting the optical influence of the detection light of the mark detection means due to the absence of the reticle. When the reticle is present in the optical path of the mark detection light, the first lens has positioning means for correcting the optical influence of the detection light of the mark detection means due to the existence of the reticle. 1. A positioning device characterized by performing relative positioning of at least one of the reticle, the substrate stage, and a photosensitive substrate using a mark provided on parallel plane glass.
3. The first parallel flat glass is configured such that a detection mark portion and an optical axis center portion including a projection exposure light incident area of an actual element pattern on a reticle where no mark exists are separated from each other. The alignment device according to claim 1 or 2, wherein
4. The alignment device according to claim 1, wherein the second parallel flat glass has a control means for driving the second parallel flat glass.
5. The alignment apparatus according to claim 2, further comprising control means for driving the first lens having a moving means in the mark detecting means.
6. The mark detecting means includes the reticle, the plane-parallel glass, the substrate stage, and the mark in the detection area.
The alignment device according to claim 1, further comprising a moving unit that optically detects a relative positional relationship of at least one of the marks on the photosensitive substrate.
7. A reticle having a pattern to be exposed and a plurality of marks for alignment, a substrate stage capable of holding and moving a photosensitive substrate on which the pattern of the reticle is exposed, and a pattern of the reticle covering the photosensitive substrate. An optical axis between the reticle and the projection optical system, which has a mark for relative positioning of at least one of the projection optical system for forming an image on the projection area, the reticle, the substrate stage, and the photosensitive substrate. A positioning device having a first parallel flat glass arranged above, and positioning at least one of the reticle, the substrate stage, and the photosensitive substrate using a mark provided on the parallel flat glass. A second parallel flat glass having a thickness substantially the same as that of the reticle is detachably provided in the detection optical path of the mark on the first parallel flat glass. Russ when said reticle is not in the detection light path of the marks on the glass first parallel plane,
When the reticle is inserted in the detection optical path of the mark on the first plane-parallel glass and the reticle is in the detection optical path of the mark on the first plane-parallel glass, the mark on the first plane-parallel glass is displayed. The alignment device characterized in that it is retracted out of the detection optical path.
8. A reticle having a pattern to be exposed and a plurality of marks for alignment, a substrate stage capable of holding and moving a photosensitive substrate on which the pattern of the reticle is exposed, and a pattern of the reticle covering the photosensitive substrate. An optical axis between the reticle and the projection optical system, which has a mark for performing relative positioning of at least one of a projection optical system for forming an image on the projection area, the reticle, a substrate stage, and a photosensitive substrate. An alignment device having a parallel plane glass arranged above, and performing positioning of at least one of the reticle, the substrate stage, and the photosensitive substrate using a mark provided on the parallel plane glass. A detection area at a predetermined position within the projection field of the projection optical system, and the reticle, the parallel flat glass, the substrate stage, and a photosensitive substrate in the detection area. Second mark detecting means having a moving means for optically detecting the relative positional relationship of at least one of the above marks, projection exposure light incidence on the real element pattern surface on the reticle on the parallel plane glass A predetermined second mark of the marks formed out of the range and a first reticle mark on the reticle are detected by the second mark detecting means, and the second mark and the first reticle mark are predetermined. And a second positioning means for positioning so as to have a positional relationship with each other, and the second mark detecting means detects a positional deviation amount between the detection mark detection center on the parallel plane glass and the detection mark detection center on the reticle. , A means for storing the shift amount as a shift amount between the parallel plane glass and the reticle position, the second mark detecting means has a first lens movable on the optical axis, and the second mark detecting means An alignment apparatus, which corrects an optical change of the second mark detecting means caused by whether or not the reticle exists in the detection optical path of the means.
9. An exposure apparatus for exposing a pattern on a reticle onto a substrate via a projection optical system, comprising a reference mark plate having a reference mark, and a stage capable of holding and moving the substrate. A first mark corresponding to the reference mark and the reticle
And a second mark for aligning the reticle, which is fixed with respect to the projection optical system and is arranged on the reticle.
A plane parallel glass disposed between the position and the projection optical system; a first position detection system having a detection reference and detecting a relative position between the detection reference and the reference mark; and a reticle of the projection optical system. By irradiating detection light from the side, by detecting the reference mark on the reference mark plate from the reticle side of the projection optical system through the projection optical system,
And a second position detection system for detecting the relative position of the first mark and the reference mark, the relative position and the second between the reference mark and said detected detection reference by the first position detection system An exposure apparatus, wherein a baseline value is obtained based on a relative position between the reference mark and the first mark detected by a position detection system.
10. The reference mark is a first reference mark corresponding to the detection reference of the first position detection system, and
A second corresponding to the first mark on the plane-parallel glass
The exposure apparatus according to claim 9 , further comprising a reference mark.
11. The detection optical path of the first position detection system according to claim 9 or 10, characterized in that through said projection optical system
The exposure apparatus according to.
12. using the exposure apparatus according to any one of claims 9 to 11, and exposed on a wafer pattern on the reticle via the projection optical system, then the device a wafer is developed Device manufacturing method for manufacturing.
JP32378197A 1997-11-10 1997-11-10 Positioning apparatus and projection exposure apparatus using the same Expired - Fee Related JP3466893B2 (en)

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US09/186,160 US6532056B2 (en) 1997-11-10 1998-11-05 Alignment system and projection exposure apparatus
KR1019980047977A KR100308608B1 (en) 1997-11-10 1998-11-10 Alignment system and projection exposure apparatus
US10/337,887 US6683673B2 (en) 1997-11-10 2003-01-08 Alignment system and projection exposure apparatus
US10/677,235 US6847432B2 (en) 1997-11-10 2003-10-03 Alignment system and projection exposure apparatus

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CN100476599C (en) * 2002-09-20 2009-04-08 Asml荷兰有限公司 Photoetching mark structure, photoetching projection device comprising the photoetching mark structure, and method for aligning with the photoetching mark structure
JP4227402B2 (en) * 2002-12-06 2009-02-18 キヤノン株式会社 Scanning exposure equipment
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US6683673B2 (en) 2004-01-27
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US20030090642A1 (en) 2003-05-15
US6847432B2 (en) 2005-01-25

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