JP2011248125A - Exposure method, exposure device, mask and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce an area in an unexposed region formed on a substrate.SOLUTION: An exposure method of exposing the substrate includes: a first transfer step in which a first pattern out of the first pattern and a peripheral pattern provided around the first pattern formed on a mask is transferred to the substrate several times, and a second transfer step in which a part of the first pattern and a second pattern including the peripheral pattern are transferred from an area, to which the first pattern is transferred, to an area, to which the first pattern is not transferred, in the substrate.

Description

  The present invention relates to an exposure method, an exposure apparatus, a mask, and a device manufacturing method.

  For example, an electronic device such as a flat panel display is increasing in area, and is required to improve productivity by increasing the throughput while further miniaturizing the design rule. For this reason, for example, it is required to perform so-called multi-surface processing, in which a plurality of devices (panels) are obtained from one plate by projecting onto a plurality of exposure areas on the plate.

  The manufacturing process of the electronic device includes a process of exposing the substrate with exposure light through a mask as disclosed in the following patent document. In the exposure process, a so-called step-and-scan type exposure apparatus that repeats step movement of the mask and the glass plate is used in order to cope with an increase in the area of the device pattern and multi-cavity. In this type of exposure apparatus, a mask and a plate are moved synchronously (scanned) with respect to the projection optical system to sequentially transfer a plurality of patterns onto the plate.

  In recent years, the number of setting items such as the number of panels produced from a single plate and the layout of the panels has increased. Depending on the selection of these setting items, for example, a large unused area may occur in one plate.

JP 2003-347185 A

  If a large unexposed area is generated on the plate, it may affect the fixing stability of the resist during development. In addition, for example, when a metal layer is formed on the entire surface of the unexposed area in the post-development process, distortion due to thermal deformation generated in the metal layer increases, which may affect the overlay accuracy of the device pattern. . Therefore, it is required to avoid the formation of a large area unexposed region on the substrate.

  In view of the circumstances as described above, it is an object of an aspect of the present invention to provide an exposure method, an exposure apparatus, a mask, and a device manufacturing method that can reduce the area of an unexposed region formed on a substrate. .

  According to the first aspect of the present invention, there is provided an exposure method for exposing a substrate, wherein the first pattern is a substrate out of masks having a first pattern and a peripheral pattern provided around the first pattern. And a second transfer step of transferring a second pattern including a part of the first pattern and a peripheral pattern to a region outside the region where the first pattern is transferred on the substrate. An exposure method is provided.

  According to the second aspect of the present invention, there is provided an exposure method for exposing a substrate, the mask having a first pattern and a peripheral pattern provided around the first pattern, through the first pattern. A first transfer step in which the exposure light is scanned in the first direction of the substrate to transfer the first pattern to the substrate; a part of the first pattern in a region of the substrate that is outside the region where the first pattern is transferred; A second transfer step of transferring the second pattern by scanning the exposure light through the second pattern including the peripheral pattern in the first direction, and orthogonal to the first direction of the scanning area of the second pattern by one scanning. An adjustment step of adjusting the scanning area of the first pattern and the scanning area of the second pattern so that the dimension in the second direction is larger than the dimension in the second direction of the scanning area of the first pattern by one scanning. Including dew A method is provided.

  According to the third aspect of the present invention, there is provided an exposure apparatus for exposing a substrate, wherein the first pattern is a substrate out of a mask having a first pattern and a peripheral pattern provided around the first pattern. And an exposure apparatus including a control device that transfers a second pattern including a part of the first pattern and a peripheral pattern to a region outside the region where the first pattern is transferred on the substrate. The

  According to a fourth aspect of the present invention, there is provided an exposure apparatus for exposing a substrate, the mask having a first pattern and a peripheral pattern provided around the first pattern, through the first pattern. The exposure light is scanned in the first direction of the substrate to transfer the first pattern to the substrate, and a part of the first pattern and a peripheral pattern are included in a region of the substrate that is out of the region where the first pattern is transferred. A control device for transferring the second pattern by scanning exposure light through the second pattern in the first direction, and a dimension in the second direction orthogonal to the first direction of the scanning area of the second pattern by one scanning An exposure apparatus including an adjustment device that adjusts the scanning area of the first pattern and the scanning area of the second pattern so that the dimension in the second direction of the scanning area of the first pattern by one scan is larger It is subjected.

  According to a fifth aspect of the present invention, there is provided a first pattern to be transferred to a substrate, and a second pattern to be transferred to a region outside the region to which the first pattern is transferred of the substrate. The two patterns are provided with a mask including a part of the first pattern and a peripheral pattern provided around the first pattern.

  According to the sixth aspect of the present invention, the substrate is exposed using the exposure method according to the aspect of the present invention, and the exposed substrate is developed, and an exposure pattern layer corresponding to the first pattern and the second pattern. And a device manufacturing method including processing the substrate through the exposed pattern layer.

  According to the aspect of the present invention, the area of the unexposed region formed on the substrate can be reduced.

1 is a schematic diagram showing a configuration of an exposure apparatus according to an embodiment of the present invention. 1 is a perspective view showing a configuration of an exposure apparatus according to the present embodiment. The figure which shows an example of the illumination system which concerns on this embodiment. 1 is a diagram showing an example of a projection system and a substrate stage according to the present embodiment. The figure which shows an example of the detection system which concerns on this embodiment. The schematic diagram which shows the positional relationship of the illumination area | region, detection area | region, and mask which concerns on this embodiment. The top view which shows the structure of a mask. The perspective view which shows the structure of a part of mask stage. The figure which shows the positional relationship of a mask, X blind, and Y blind. The figure which shows the positional relationship of a mask, X blind, and Y blind. The top view which shows the structure of a board | substrate. The schematic diagram which shows the positional relationship of a projection area | region and a detection area. FIG. 6 is an operation diagram showing a process of an exposure operation using the exposure apparatus. FIG. 6 is an operation diagram showing a process of an exposure operation using the exposure apparatus. FIG. 6 is an operation diagram showing a process of an exposure operation using the exposure apparatus. FIG. 6 is an operation diagram showing a process of an exposure operation using the exposure apparatus. FIG. 6 is an operation diagram showing a process of an exposure operation using the exposure apparatus. The top view which shows the other structure of a board | substrate. The flowchart which shows a part of manufacturing process at the time of manufacturing a semiconductor device. The flowchart which shows a part of manufacturing process at the time of manufacturing a liquid crystal display element.

  Embodiments of the present invention will be described below with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

  FIG. 1 is a schematic block diagram showing an example of an exposure apparatus EX according to this embodiment, and FIG. 2 is a perspective view. 1 and 2, an exposure apparatus EX includes a mask stage 1 that can move while holding a mask M, a substrate stage 2 that can move while holding a substrate P, and a drive system 3 that moves the mask stage 1. A driving system 4 that moves the substrate stage 2, an illumination system IS that illuminates the mask M with the exposure light EL, a projection system PS that projects an image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P, And a control device CONT for controlling the entire operation of the exposure apparatus EX.

  The exposure apparatus EX of the present embodiment includes an interferometer system 6 that measures position information of the mask stage 1 and the substrate stage 2, a first detection system 7 that detects position information of the surface of the mask M, and the surface of the substrate P. A second detection system 8 that detects position information and an alignment system 40 that detects alignment marks on the substrate P are provided.

  The exposure apparatus EX includes a body 13. The body 13 includes, for example, a base plate 10 disposed on a support surface (for example, floor surface) FL in a clean room via a vibration isolation table BL, a first column 11 disposed on the base plate 10, and a first column 11 And a second column 12 disposed on the surface.

  The body 13 supports each of the projection system PS, the mask stage 1 and the substrate stage 2. The projection system PS is supported by the first column 11 via the surface plate 14. The mask stage 1 is supported so as to be movable with respect to the second column 12. The substrate stage 2 is supported so as to be movable with respect to the base plate 10.

  The exposure apparatus EX projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction. That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens scan exposure apparatus. The exposure apparatus EX is provided with a projection system PS having seven projection optical systems PL1 to PL7. The exposure apparatus EX is provided with an illumination system IS. The number of projection optical systems and illumination modules is not limited to seven. For example, the projection system PS may have 11 projection optical systems, and the illumination system IS may have 11 illumination modules.

  The illumination system IS has, for example, seven illumination modules IL1 to IL7. Illumination modules IL1 to IL7 illuminate, for example, seven illumination regions IR1 to IR7 of mask M with exposure light EL having a substantially uniform illuminance distribution. As the exposure light EL emitted from the illumination system IS, for example, bright lines (g-line, h-line, i-line) emitted from a mercury lamp are used.

  The mask stage 1 is movable with respect to the illumination regions IR1 to IR7 while holding the mask M. The mask stage 1 includes a mask holding unit 15 that can hold the mask M. The mask holding unit 15 includes a chuck mechanism that can vacuum-suck the mask M, and holds the mask M in a releasable manner. The mask holding unit 15 holds the mask M so that the lower surface (pattern forming surface) of the mask M and the XY plane are substantially parallel.

  The drive system 3 includes, for example, a linear motor, and can move the mask stage 1 on the guide surface 12G of the second column 12. The mask stage 1 can be moved in the three directions of the X axis, the Y axis, and the θZ direction on the guide surface 12G in a state where the mask M is held by the mask holding unit 15 by the operation of the drive system 3.

  The projection system PS has a plurality of projection optical systems that project the exposure light EL onto predetermined projection regions PR1 to PR7. The projection areas PR1 to PR7 correspond to the irradiation areas of the exposure light EL emitted from the projection optical systems PL1 to PL7. The projection system PS projects pattern images on seven different projection areas PR1 to PR7, respectively. The projection system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto portions of the substrate P that are disposed in the projection regions PR1 to PR7.

  The substrate stage 2 is movable with respect to the projection regions PR1 to PR7 while holding the substrate P. The substrate stage 2 includes a substrate holding unit 16 that can hold the substrate P. The substrate holding part 16 includes a chuck mechanism capable of vacuum-sucking the substrate P, and holds the substrate P so that it can be released. The substrate holding unit 16 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel. The drive system 4 includes, for example, a linear motor, and can move the substrate stage 2 on the guide surface 10 </ b> G of the base plate 10. The substrate stage 2 is operated on the guide surface 10G in the state where the substrate P is held by the substrate holding unit 16 by the operation of the drive system 4, and the six on the X axis, Y axis, Z axis, θX, θY, and θZ directions. It can move in the direction.

  FIG. 3 is a schematic configuration diagram illustrating an example of the illumination system IS according to the present embodiment. In FIG. 3, the illumination system IS includes a light source 17 composed of an ultra-high pressure mercury lamp, an elliptic mirror 18 that reflects light emitted from the light source 17, and a dichroic mirror 19 that reflects at least part of the light from the elliptic mirror 18. And a shutter device 20 capable of blocking the progress of light from the dichroic mirror 19, a relay optical system 21 including a collimating lens 21A and a condensing lens 21B on which light from the dichroic mirror 19 is incident, and only light in a predetermined wavelength region. And a light guide unit 23 that branches the light from the relay optical system 21 and supplies it to each of the plurality of illumination modules IL1 to IL7.

  In FIG. 3, only the first illumination module IL1 is shown among the first to seventh illumination modules IL1 to IL7. The second to seventh illumination modules IL2 to IL7 have the same configuration as the first illumination module IL1. In the following description, among the first to seventh illumination modules IL1 to IL7, the first illumination module IL1 will be mainly described, and the description of the second to seventh illumination modules IL2 to IL7 will be simplified or omitted.

  The light from the relay optical system 21 enters the incident end 24 of the light guide unit 23 and is emitted from a plurality of emission ends 25A to 25G. The first illumination module IL1 includes a shutter device 26 that can block the progress of light from the exit end 25A, a collimator lens 27 that is supplied with light from the exit end 25A, and a fly that is supplied with light from the collimator lens 27. An eye integrator 28 and a condenser lens 29 to which light from the fly eye integrator 28 is supplied are provided. The exposure light EL emitted from the condenser lens 29 is applied to the illumination area IR1. The first illumination module IL1 illuminates the illumination region IR1 with the exposure light EL having a uniform illuminance distribution.

  The second to seventh illumination modules IL2 to IL7 have the same configuration as the first illumination module IL1. Each of the second to seventh illumination modules IL2 to IL7 illuminates the illumination regions IR2 to IR7 with the exposure light EL having a uniform illuminance distribution. The illumination system IS illuminates at least a part of the mask M arranged in the illumination areas IR1 to IR7 with the exposure light EL having a uniform illuminance distribution.

  FIG. 4 is a diagram showing an example of the projection system PS, the first detection system 7, the second detection system 8, the alignment system 9, and the substrate stage 2 arranged in the projection regions PR1 to PR7 according to the present embodiment.

  First, the first projection optical system PL1 will be described. In FIG. 4, the first projection optical system PL1 projects an image of the pattern of the mask M illuminated with the exposure light EL by the first illumination module IL1 onto the substrate P. The first projection optical system PL1 includes an image plane adjustment unit 33, a shift adjustment unit 34, two sets of catadioptric optical systems 31, 32, a field stop 35, and a scaling adjustment unit 36.

  The exposure light EL irradiated to the illumination area IR1 and transmitted through the mask M enters the image plane adjustment unit 33. The image plane adjustment unit 33 can adjust the position of the image plane of the first projection optical system PL1 (position in the Z axis, θX, and θY directions). The image plane adjustment unit 33 is disposed at a position that is optically conjugate with respect to the mask M and the substrate P. The image plane adjustment unit 33 includes a first optical member 33A and a second optical member 33B, and a drive device (not shown) that can move the first optical member 33A relative to the second optical member 33B. The first optical member 33A and the second optical member 33B are opposed to each other through a predetermined gap by a gas bearing. The first optical member 33A and the second optical member 33B are glass plates capable of transmitting the exposure light EL, and each have a wedge shape. The control device 5 can adjust the position of the image plane of the first projection optical system PL1 by operating the drive device and adjusting the positional relationship between the first optical member 33A and the second optical member 33B. . The exposure light EL that has passed through the image plane adjustment unit 33 enters the shift adjustment unit 34.

  The shift adjustment unit 34 can shift the image of the pattern of the mask M on the substrate P in the X-axis direction and the Y-axis direction. The exposure light EL transmitted through the shift adjustment unit 34 enters the first set of catadioptric optical system 31. The catadioptric optical system 31 forms an intermediate image of the pattern of the mask M. The exposure light EL emitted from the catadioptric optical system 31 is supplied to the field stop 35.

  The field stop 35 is disposed at the position of the intermediate image of the pattern formed by the catadioptric optical system 31. The field stop 35 defines the projection region PR1. In the present embodiment, the field stop 35 defines the projection region PR1 on the substrate P in a trapezoidal shape. The exposure light EL that has passed through the field stop 35 enters the second set of catadioptric optical system 32.

  The catadioptric optical system 32 is configured in the same manner as the catadioptric optical system 31. The exposure light EL emitted from the catadioptric optical system 32 enters the scaling adjustment unit 36. The scaling adjustment unit 36 can adjust the magnification (scaling) of the pattern image of the mask M. The exposure light EL that has passed through the scaling adjustment unit 36 is irradiated onto the substrate P. In the present embodiment, the first projection optical system PL1 projects an image of the pattern of the mask M onto the substrate P at an erecting equal magnification.

  The above-described image plane adjustment unit 33, shift adjustment unit 34, and scaling adjustment unit 36 constitute an image formation characteristic adjustment device 30 that adjusts the image formation characteristic (optical characteristic) of the first projection optical system PL1. The imaging characteristic adjusting device 30 is capable of adjusting the position of the image plane of the first projection optical system PL1 with respect to the six directions of the X axis, the Y axis, the Z axis, the θX, the θY, and the θZ directions. The magnification can be adjusted.

  The first projection optical system PL1 has been described above. The second to seventh projection optical systems PL2 to PL7 have the same configuration as the first projection optical system PL1. Description of the second to seventh projection optical systems PL2 to PL7 is omitted.

  As shown in FIGS. 2 and 4, a reference member 43 is arranged on the upper surface of the substrate stage 2 on the + X side with respect to the substrate holding unit 16. The upper surface 44 of the reference member 43 is disposed in substantially the same plane as the surface of the substrate P held by the substrate holding part 16. Further, a transmissive portion 45 that can transmit the exposure light EL is disposed on the upper surface 44 of the reference member 43. Below the reference member 43, a light receiving device 46 capable of receiving the light transmitted through the transmitting portion 45 is disposed. The light receiving device 46 includes a lens system 47 on which light that has passed through the transmission unit 45 enters, and an optical sensor 48 that receives the light that has passed through the lens system 47. In the present embodiment, the optical sensor 48 includes an image sensor (CCD). The optical sensor 48 outputs a signal corresponding to the received light to the control device 5.

  An optical member 50 having a transmission part 49 is arranged on the upper surface of the substrate stage 2 on the −X side with respect to the substrate holding part 16. Below the optical member 50, a light receiving device 51 capable of receiving light transmitted through the transmission portion 49 is disposed. The light receiving device 51 includes a lens system 52 on which light that has passed through the transmission unit 49 enters, and an optical sensor 53 that receives light that has passed through the lens system 52. The optical sensor 53 outputs a signal corresponding to the received light to the control device 5.

Next, the interferometer system 6, the first and second detection systems 7, 8 and the alignment system 9 will be described. 1 and 2, the interferometer system 6 includes a laser interferometer unit 6A that measures position information of the mask stage 1 and a laser interferometer unit 6B that measures position information of the substrate stage 2. The laser interferometer unit 6 </ b> A can measure position information of the mask stage 1 using a measurement mirror 1 </ b> R disposed on the mask stage 1.
The laser interferometer unit 6 </ b> B can measure the position information of the substrate stage 2 using the measurement mirror 2 </ b> R disposed on the substrate stage 2. In the present embodiment, the interferometer system 6 can measure position information of the mask stage 1 and the substrate stage 2 with respect to the X axis, Y axis, and θX directions using the laser interferometer units 6A and 6B.

  The first detection system 7 detects the position of the lower surface (pattern formation surface) of the mask M in the Z-axis direction. The first detection system 7 is a so-called oblique incidence type multi-point focus / leveling detection system, and as shown in FIG. 4, a plurality of detectors arranged to face the lower surface of the mask M held on the mask stage 1. 7A-7F. Each of detectors 7A to 7F includes a projection unit that irradiates detection light to detection regions MZ1 to MZ6 and a light receiving unit that can receive detection light from the lower surface of mask M arranged in detection regions MZ1 to MZ6. .

  The second detection system 8 detects the position of the surface (exposure surface) of the substrate P in the Z-axis direction. The second detection system 8 is a so-called oblique incidence type multi-point focus / leveling detection system, and as shown in FIG. 4, a plurality of detectors arranged to face the surface of the substrate P held by the substrate stage 2. 8A-8H. Each of detectors 8A to 8H includes a projection unit that irradiates detection light to detection regions PZ1 to PZ8 and a light receiving unit that can receive detection light from the surface of substrate P arranged in detection regions PZ1 to PZ8. .

  FIG. 5 is a schematic configuration diagram illustrating an example of the detector 7A. As shown in FIG. 5, the detector 7A includes a light projecting unit 54 that irradiates detection light to the detection region MZ1, and a light receiving unit 55 that can receive the detection light from the lower surface of the mask M arranged in the detection region MZ1. Have The light projecting unit 54 tilts the light source 56 that emits the detection light, the light transmission lens system 57 that receives the detection light emitted from the light source 56, and the light that has passed through the light transmission lens system 57 toward the lower surface of the mask M. And a mirror 58 guided from the direction. The light receiving unit 55 includes a mirror 59 that guides the detection light reflected on the lower surface of the mask M and reflected by the lower surface to the light receiving lens system 60, and an image sensor (CCD) 61 that receives the light that has passed through the light receiving lens system 60. I have. The light transmission lens system 57 irradiates the mask M after shaping the detection light into, for example, a slit shape. As shown in FIG. 5, when the position of the lower surface of the mask M arranged in the detection region MZ1 in the Z-axis direction changes, the detection with respect to the image sensor 61 is performed according to the amount of displacement of the lower surface of the mask M in the Z-axis direction. The incident position of light is displaced in the X-axis direction. The imaging signal of the imaging device 61 is output to the control device 5, and the control device 5 obtains the position in the Z-axis direction of the lower surface of the mask M arranged in the detection region MZ1 based on the signal from the imaging device 61. Can do.

  The configurations of the detectors 7B to 7F and the detectors 8A to 8H are the same as the configuration of the detector 7A shown in FIG. The detectors 7B to 7F can determine the positions in the Z-axis direction of the lower surface of the mask M arranged in the detection regions MZ2 to MZ6. The detectors 8A to 8H can determine the positions in the Z-axis direction of the surface of the substrate P arranged in the detection regions PZ1 to PZ8.

The alignment system 9 detects an alignment mark provided on the substrate P.
The alignment system 9 is a so-called off-axis alignment system, and includes a plurality of microscopes 9A to 9F arranged to face the surface of the substrate P held on the substrate stage 2 as shown in FIG. Each of the detectors 9A to 9F includes a projection unit that irradiates detection light to the detection areas AL1 to AL6, and a light receiving unit that can acquire an optical image of the alignment marks arranged in the detection areas AL1 to AL6.

  FIG. 6 is a schematic diagram illustrating an example of a positional relationship between the illumination regions IR1 to IR7, the detection regions MZ1 to MZ6, and the mask M, and illustrates a positional relationship in a plane including the lower surface of the mask M.

  In the present embodiment, each of the illumination areas IR1 to IR7 is rectangular in the XY plane. In the present embodiment, the illumination areas IR1, IR3, IR5, IR7 by the illumination modules IL1, IL3, IL5, IL7 are arranged at substantially equal intervals in the Y-axis direction, and the illumination areas IR2, IR4 by the illumination modules IL2, IL4, IL6 are arranged. , IR6 are arranged at substantially equal intervals in the Y-axis direction. The illumination areas IR1, IR3, IR5, IR7 are arranged on the −X side with respect to the illumination areas IR2, IR4, IR6. In addition, illumination areas IR2, IR4, and IR6 are arranged between illumination areas IR1, IR3, IR5, and IR7 with respect to the Y-axis direction.

  In the present embodiment, the detection areas MZ1, MZ3, and MZ5 by the detectors 7A, 7C, and 7E are arranged on the −X side with respect to the illumination areas IR1 to IR7, and the detection areas MZ2, MZ4 by the detectors 7B, 7D, and 7F. , MZ6 are arranged on the + X side with respect to the illumination regions IR1 to IR7. Further, the detection areas MZ1, MZ3, and MZ5 are arranged at almost equal intervals in the Y-axis direction, and the detection areas MZ2, MZ4, and MZ6 are arranged at almost equal intervals in the Y-axis direction.

  Among the plurality of detection regions MZ1 to MZ6, the interval between the two outer detection regions MZ1 and the detection region MZ5 in the Y-axis direction (the interval between the detection region MZ2 and the detection region MZ6) is among the plurality of illumination regions IR1 to IR7. , Smaller than the interval between the −Y side edge of the two outer illumination areas IR1 and the + Y side edge of the illumination area IR7 with respect to the Y-axis direction.

  Further, among the plurality of detection areas MZ1 to MZ6, the distance between the two outer detection areas MZ1 and the detection area MZ5 in the Y-axis direction (the distance between the detection area MZ2 and the detection area MZ6) is on the −Y side of the pattern area. The distance between the edge and the edge on the + Y side is almost equal to or slightly smaller.

  The control device 5 moves the mask stage 1 in the X-axis direction, and moves the -Z side surface of the mask M held on the mask stage 1 with respect to the detection regions MZ1 to MZ6 of the detectors 7A to 7F in the X-axis direction. To the detection areas MZ1 to MZ6 of the detectors 7A to 7F, a plurality of detection points set on the −Z side surface of the mask M are arranged, and the positions of the plurality of detection points in the Z-axis direction are arranged. Can be detected. The control device 5 outputs the Z axis of the −Z side surface of the mask M based on the position in the Z axis direction of the lower surface of the mask M detected from each of the plurality of detection points, which is output from the first detection system 7. , ΘX, and θY directions (map data) can be acquired.

FIG. 7 is a plan view showing the configuration of the mask M. FIG.
As shown in FIG. 7, the first pattern MP1 and the peripheral pattern MPA projected onto the substrate P are formed on the −Z side surface of the mask M. The first pattern MP1 is formed in a rectangular area at the center of the mask M, and examples thereof include a wiring pattern (device pattern) of an electronic device.

  The peripheral pattern MPA is provided around the first pattern MP1. In the present embodiment, for example, the first pattern MP1 is formed in a pair of rectangular regions sandwiching the + X side end portion in the Y direction. The peripheral pattern MPA is formed so as to be continuous with the first pattern MP1.

  The peripheral pattern MPA is formed so that the transmittance of exposure light per unit area is substantially equal to that of the first pattern MP1. The specific pattern shape of the peripheral pattern MPA may include, for example, a shape equal to at least a part of the first pattern MP1, or a shape different from the first pattern MP1 (for example, a test pattern). It does not matter. Further, in the present embodiment, a portion (a portion surrounded by a broken line in FIG. 7) that combines all of the pair of peripheral patterns MPA and a portion of the first pattern MP1 sandwiched between the pair of peripheral patterns MPA is the first. Two patterns are MP2.

  The first pattern MP1 is illuminated by all of the illumination areas IR3 to IR5 and a part of the illumination areas IR2 and IR6 among the illumination areas IR1 to IR7. Further, the second pattern MP2 is illuminated by all of the illumination areas IR2 to IR6 and a part of the illumination areas IR1 and IR7.

FIG. 8 is a perspective view showing a partial configuration of the mask stage 1.
As shown in FIG. 8, the mask stage 1 is provided with two X blinds BX (BX1 and BX2) and two Y blinds BY (BY1 and BY2). These X blind BX and Y blind BY shield at least a part of the exposure light illuminated on the mask M.

  Each X blind BX is formed to have a longitudinal direction in the Y direction. Each X blind BX is supported by a guide rail GX extending in the X direction, and is provided so as to be movable along the guide rail GX. Each X blind BX is connected to, for example, a drive mechanism ACX, and the drive mechanism ACX can adjust the movement amount and the movement timing of the X blind BX under the control of the control device CONT. As such a drive mechanism ACX, for example, a linear motor, an electric motor, an air cylinder, or the like can be used. Of the two X blinds BX, the X blind BX1 disposed on the −X side is formed to have a larger dimension in the X direction than the X blind BX2 disposed on the + X side. The two X blinds BX are provided to be movable on the + Z side from the mask M.

  Each Y blind BY is formed so as to have a longitudinal direction in the X direction. Each Y blind BY is supported by a guide rail GY extending in the Y direction, and is provided so as to be movable along the guide rail GY. Each Y blind BY is connected to, for example, a drive mechanism ACY, and the drive mechanism ACY can adjust the movement amount and the movement timing of the Y blind BY under the control of the control device CONT. As such a drive mechanism ACY, for example, a linear motor, an electric motor, an air cylinder, or the like can be used as in the drive mechanism ACX. Each Y blind BY is formed so that the dimension in the Y direction is equal. The two Y blinds BY are provided so as to be movable on the + Z side of the mask M and on the −Z side of the X blinds BX. In this way, the arrangement is such that the movement is not hindered between the X blind BX and the Y blind BY.

9 and 10 are diagrams showing the arrangement of the X blind BX and the Y blind BY.
FIG. 9 shows the arrangement (first arrangement) of the X blind BX and the Y blind BY when the first pattern MP1 is transferred. As shown in FIG. 9, when the first pattern MP1 is transferred, for example, in the X blind BX1, the + X side edge of the X blind BX1 and the −X side edge of the first pattern MP1 coincide with each other. Be placed. The X blind BX2 is arranged such that the −X side end side of the X blind BX2 and the + X side end side of the first pattern MP1 coincide.

  Further, for example, the Y blind BY1 is arranged so that the + Y side end side of the Y blind BY1 and the −Y side end side of the first pattern MP1 coincide. The Y blind BY2 is arranged so that the −Y side end side of the Y blind BY2 and the + Y side end side of the first pattern MP1 coincide. When the first pattern MP1 is transferred, the peripheral pattern MPA is covered with the Y blind BY. For this reason, all of the exposure light that illuminates the illumination areas IR1 and IR7 is shielded, and part of the exposure light that illuminates the illumination areas IR2 and IR6 is shielded.

  FIG. 10 shows the arrangement (second arrangement) of the X blind BX and the Y blind BY when the second pattern MP2 is transferred. As shown in FIG. 10, when the second pattern MP2 is transferred, for example, the X blind BX1 includes the + X side edge of the X blind BX1 and the −X side edge of the second pattern MP2 (−X of the peripheral pattern MPA). (Side edge) is arranged so as to match. The X blind BX2 is arranged such that the −X side end side of the X blind BX2 and the + X side end side of the first pattern MP1 (the + X side end side of the peripheral pattern MPA) coincide.

  For example, the Y blind BY1 is arranged so that the + Y side end side of the Y blind BY1 and the −Y side end side of the peripheral pattern MPA coincide. The Y blind BY2 is arranged so that the −Y side end side of the Y blind BY2 and the + Y side end side of the peripheral pattern MPA coincide. When the second pattern MP2 is transferred, a portion of the first pattern MP1 that is not included in the second pattern MP2 is covered with the X blind BX. For this reason, a part of the exposure light that illuminates the illumination areas IR1 and IR7 is shielded.

FIG. 11A is a diagram illustrating a configuration of the substrate P.
The substrate P includes, for example, a base material such as a glass plate and a photosensitive film (coated photosensitizer) formed on the base material. The substrate P includes a large glass plate, and the size of one side of the substrate P is, for example, 500 mm or more. As the base material of the substrate P, for example, a rectangular glass plate of about 2250 mm × 1950 mm is used.

  As shown in FIG. 11A, the substrate P is provided with exposure areas PA1 to PA3 to which the first pattern MP1 of the mask M is transferred, and exposure areas PA4 and PA5 to which the second pattern MP2 of the mask M is transferred. ing. The exposure areas PA1 to PA3 are areas that become panels of, for example, an electronic device, and are formed in a rectangular shape. In the present embodiment, the exposure areas PA1 to PA3 are set to a size of about 57 inches, for example. The exposure areas PA4 and PA5 are provided in areas outside the exposure areas PA1 to PA3 of the substrate P. That is, the exposure areas PA4 and PA5 are provided in an unused area of the substrate P that is not used as a panel.

  Of the exposure areas PA1 to PA3, an alignment mark AM1 is disposed at the −X side corner. The alignment marks AM1 are arranged in a line in the Y direction. Of the exposure areas PA1 to PA3, an alignment mark AM2 is arranged at the + X side corner. The alignment marks AM2 are arranged, for example, in a line in the Y direction.

  FIG. 11A shows a state where the projection regions PR1 to PR7 are arranged on the substrate P. Each of the projection regions PR1 to PR7 is formed in a trapezoid in the XY plane. The projection areas PR1, PR3, PR5, and PR7 are arranged at substantially equal intervals in the Y-axis direction. The projection areas PR2, PR4, PR6 are arranged at substantially equal intervals in the Y-axis direction. The projection areas PR1, PR3, PR5, and PR7 are arranged on the −X side with respect to the projection areas PR2, PR4, and PR6. Projection regions PR2, PR4, and PR6 are disposed between the projection regions PR1, PR3, PR5, and PR7 with respect to the Y-axis direction.

FIG. 11B is a schematic diagram illustrating an example of a positional relationship among the projection areas PR1 to PR7, the detection areas PZ1 to PZ8, and the detection areas AL1 to AL6.
Detection areas PZ1, PZ3, PZ5, PZ7, and PZ8 by detectors 8A, 8C, 8E, 8G, and 8H are arranged on the −X side with respect to projection areas PR1 to PR7, and detection areas by detectors 8B, 8D, and 8F PZ2, PZ4, and PZ6 are arranged on the + X side with respect to the projection regions PR1 to PR7. Further, the detection areas PZ1, PZ3, PZ5, PZ7, and PZ8 are arranged at substantially equal intervals in the Y-axis direction, and the detection areas PZ2, PZ4, and PZ6 are arranged at substantially equal intervals in the Y-axis direction.

  Among the plurality of detection areas PZ1 to PZ8, the interval between the two outer detection areas PZ1 and the detection area PZ8 in the Y-axis direction is the -Y side of the two outer projection areas PR1 among the plurality of projection areas PR1 to PR7. It is larger than the interval between the edge and the + Y side edge of the projection region PR7. In addition, among the central PZ2 to PZ7 in the Y-axis direction, the interval between the two outer detection regions PZ3 and the detection region PZ7 in the Y-axis direction (the interval between the detection region PZ2 and the detection region PZ6) is a plurality of projection regions PR1. Is smaller than the interval between the −Y side edge of the two outer projection areas PR1 and the + Y side edge of the projection area PR7.

  Further, among the plurality of detection areas PZ1 to PZ8, the interval between the two outer detection areas PZ1 and the detection area PZ8 with respect to the Y-axis direction is the edge on the −Y side of the exposure area PA3 among the plurality of exposure areas PA1 to PA3. Is slightly smaller than the interval between the + Y side edge of the exposure area PA2 and larger than the interval between the −Y side edge of the exposure area PA1 and the + Y side edge of the exposure area PA1.

  The control device 5 moves the substrate stage 2 in the X-axis direction, moves the surface of the substrate P held on the substrate stage 2 with respect to the detection regions PZ1 to PZ8 of the detectors 8A to 8H in the X-axis direction. A plurality of detection points set on the surface of the substrate P (exposure areas PA1 to PA3) are arranged in the detection areas PZ1 to PZ8 of the detectors 8A to 8H, and the positions of the plurality of detection points in the Z-axis direction are determined. It can be detected. The control device 5 outputs the surface of the substrate P (exposure areas PA1 to PA3) based on the position in the Z-axis direction of the surface of the substrate P detected at each of the plurality of detection points, which is output from the second detection system 8. Position information (map data) in the Z-axis, θX, and θY directions can be acquired.

  In the present embodiment, the detection areas AL1 to AL6 by the microscopes 9A to 9F are arranged on the −X side with respect to the detection areas PZ1, PZ3, PZ5, PR7, and PZ8. The detection areas AL1 to AL6 are arranged away from each other in the Y-axis direction. Among the plurality of detection areas AL1 to AL6, the interval between the two outer detection areas AL1 and AL6 with respect to the Y-axis direction is the same as that of the exposure area PA3 on the −Y side of the plurality of exposure areas PA1 to PA3. It is almost equal to the distance from the + Y side edge of the area PA2.

  The alignment system 9 detects a plurality of alignment marks AM1 and AM2 provided on the substrate P. In the present embodiment, the microscopes 9A to 9F (detection areas AL1 to AL6) are arranged so as to correspond to the six alignment marks AM1 and AM2 arranged on the substrate P so as to be separated in the Y-axis direction. . The microscopes 9A to 9F are provided so that the alignment marks AM1 and AM2 are simultaneously arranged in the detection areas AL1 to AL6. The alignment system 9 can simultaneously detect the six alignment marks AM1 and AM2 using the microscopes 9A to 9F.

Next, an example of a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration will be described with reference to the schematic diagrams of FIGS.
First, the control device CONT carries the mask M into the mask stage 1. After the mask M is held on the mask stage 1, a setup process including an alignment process of the mask M, various measurement processes, and a calibration process is executed based on the exposure recipe.

  In the alignment process of the mask M, the position of the mask M in the XY plane is measured by projecting an image of an alignment mark (not shown) arranged on the mask M and detecting the image with a detection device (not shown). Includes processing. The measurement process includes, for example, at least one of a process of measuring the illuminance of the exposure light EL emitted from each of the projection optical systems PL1 to PL7 and a process of measuring the imaging characteristics of the projection optical systems PL1 to PL7. The calibration process uses the result of the measurement process to adjust the illuminance of the exposure light EL emitted from each of the illumination modules IL1 to IL7 and the projection optical systems PL1 to PL1 based on the measurement result of the imaging characteristics. It includes at least one process for adjusting the imaging characteristics of PL7. Note that the exposure apparatus EX is appropriately provided with various setup apparatuses for performing these setup processes.

  After completing the above processes, the control device CONT carries the substrate P into the substrate stage 2 at a predetermined timing. The substrate P is in a state in which a photosensitive material such as a resist is coated on the surface in advance by a separate coating apparatus or the like. After the substrate P is held on the substrate stage 2, a substrate adjustment process (first substrate adjustment step) for adjusting the position and posture of the substrate P is executed based on the exposure recipe. In the substrate adjustment process, the control device CONT first detects one row of the alignment marks AM1 provided on the substrate P, and then detects one row of the alignment marks AM2. After detecting the alignment marks AM1 and AM2, the control device CONT drives the substrate stage 2 in accordance with the detection result to adjust the position and posture of the substrate P.

  After the substrate adjustment process, the first pattern MP1 is transferred to the exposure areas PA1 to PA3 (first transfer process). In the first transfer process, first, the exposure area PA1 is exposed. In this exposure processing, the control device CONT sets the X blind BX and the Y blind BY in the first arrangement shown in FIG. 9, and moves the mask M in the −X direction with respect to the illumination regions IR1 to IR7. Further, the control device CONT moves the substrate P in the −X direction with respect to the projection regions PR1 to PR7 so as to synchronize with the movement of the mask M.

  Since the X blind BX and the Y blind BY are in the first arrangement, the exposure light is irradiated onto the mask M in a part of the illumination regions IR2 and IR6 and in the illumination regions IR3 to IR5. Therefore, an image is projected onto the substrate P on a part of the projection regions PR2 and PR6 and all of the projection regions PR3 to PR5 among the projection regions PR1 to PR7. In this state, the mask M and the substrate P are synchronously moved in the −X direction, whereby the exposure area PA1 is scanned by the projection areas PR2 to PR6 as shown in FIG. A transfer image of MP1 is formed.

  After the transfer image of the first pattern MP1 is formed in the exposure area PA1, the control device CONT forms a transfer image of the first pattern MP1 in the exposure area PA2. The control device CONT moves the substrate stage 2 in the −Y direction so that the projection areas IR2 to IR6 are arranged in the exposure area PA2, and as shown in FIG. 13, the direction opposite to the exposure time in the exposure area PA1. That is, the mask M and the substrate P are moved synchronously in the + X direction. By this operation, the exposure area PA2 is scanned by the projection areas IR2 to IR6, and a transfer image of the first pattern MP1 is formed in the exposure area PA2.

  After the transfer image of the first pattern MP1 is formed in the exposure area PA2, the control device CONT forms a transfer image of the first pattern MP1 in the exposure area PA3. The control device CONT moves the substrate stage 2 in the + Y direction so that the projection areas IR2 to IR6 are arranged in the exposure area PA3, and as shown in FIG. 14, the opposite direction to the exposure time of the exposure area PA2, that is, The mask M and the substrate P are moved synchronously in the −X direction. By this operation, the exposure area PA3 is scanned by the projection areas IR2 to IR6, and a transfer image of the first pattern MP1 is formed in the exposure area PA3.

  Next, the control device CONT forms a transfer image of the second pattern MP2 in the exposure areas PA4 and PA5 (second transfer step). In the second transfer process, the control device CONT sets the X blind BX and the Y blind BY to the second arrangement shown in FIG. Further, the substrate stage 2 is moved in the −Y direction so that the positions in the Y direction of the illumination areas IR1 to IR7 and the exposure area PA4 are aligned. At this time, the control device CONT drives the substrate stage 2 using the detection results of the alignment marks AM1 and AM2, and performs substrate adjustment processing for adjusting the position and posture of the substrate P.

  In the control device CONT, the movement amount of the substrate stage 2 with respect to the detection results of the alignment marks AM1 and AM2 is set in advance and stored. When driving the substrate stage 2, the control device CONT moves the substrate stage 2 by the amount of movement. With respect to the exposure of the exposure areas PA4 and PA5, a certain degree of positional deviation and misalignment can be allowed as long as they do not interfere with the exposure areas PA1 to PA3. For this reason, it is not always necessary to strictly detect the alignment mark, and the positional accuracy of the exposure areas PA4 and PA5 is sufficiently ensured even with the above processing. For this reason, the processing speed is improved.

  After adjusting the position of the substrate stage 2, the control device CONT moves the mask M in the + X direction with respect to the illumination regions IR1 to IR7, and moves the substrate P to the projection regions PR1 to PR1 so as to be synchronized with the movement of the mask M. Move in the + X direction with respect to PR7.

  Since the X blind BX and the Y blind BY are in the second arrangement, the exposure light is irradiated onto the mask M in a part of the illumination regions IR1 and IR7 and in the illumination regions IR2 to IR6. Therefore, an image is projected onto the substrate P on a part of the projection areas PR1 and PR7 and all of the projection areas PR2 to PR6. In this state, the mask M and the substrate P are synchronously moved in the −X direction, so that the exposure area PA4 is scanned by the projection areas PR1 to PR7 as shown in FIG. An MP2 transfer image is formed.

  After the transfer image of the second pattern MP2 is formed in the exposure area PA4, the control device CONT forms a transfer image of the second pattern MP2 in the exposure area PA5. The control device CONT moves the substrate stage 2 in the −Y direction so that the projection areas PR1 to PR7 are arranged in the exposure area PA5. Thereafter, the control device CONT moves the mask M in the + X direction with respect to the illumination regions IR1 to IR7, and moves the substrate P in the + X direction with respect to the projection regions PR1 to PR7 so as to be synchronized with the movement of the mask M. . By this operation, as shown in FIG. 16, the exposure area PA5 is scanned by the projection areas PR1 to PR7, and a transfer image of the first pattern MP1 is formed in the exposure area PA5.

  Thereafter, the above processing is repeated in the same lot. The same lot includes a group of a plurality of substrates P exposed using the same mask M. At least in the same lot, exposure is performed under the same exposure recipe. The exposed substrate P is carried out of the exposure apparatus EX, and various processes such as a developing process and a wiring layer forming process are appropriately performed.

  For example, when a plurality of transfer regions of the first pattern MP1 are arranged on one substrate P, a certain large unused region may be generated on the substrate P as in this embodiment depending on the layout selection. If this unused area is not exposed but only the transfer area is exposed, an unexposed area having a large area is formed on the substrate P, which may affect the fixing stability of the resist during development.

  Further, for example, when a metal layer is formed on the entire surface of the unexposed region in the post-development process, distortion due to thermal deformation generated in the metal layer is increased as compared with the portion where the wiring layer is formed, and the device pattern ( This may affect the overlay accuracy of the wiring pattern. Therefore, it is required to avoid the formation of a large unexposed region on the substrate P.

  In contrast, in the present embodiment, when the substrate P is exposed, the first pattern MP1 is selected from the mask M having the first pattern MP1 and the peripheral pattern MPA provided around the first pattern MP1. A part of the first pattern MP1 and the peripheral pattern MPA are transferred to a first transfer step of transferring the substrate P a plurality of times and an area (unused area) outside the area of the substrate P where the first pattern MP1 is transferred. Since the second transfer step of transferring the second pattern MP2 is included, it can be avoided that most of the unused area becomes an unexposed area. That is, according to the present embodiment, the area of the unexposed region formed on the substrate P can be reduced as compared with the prior art.

  In addition, in the present embodiment, a first pattern MP1 and a second pattern MP2 (a part of the first pattern MP1 and a peripheral pattern MPA) are formed on the mask M, and the first in the exposure areas PA1 to PA3. The pattern MP1 is transferred, and the transfer pattern formed on the substrate P is transferred to the exposure areas PA4 and PA5 in order to transfer the second pattern MP2 having a larger dimension in the Y direction (direction perpendicular to the scanning direction) than the first pattern MP1. The dimension in the Y direction is larger in the exposure areas PA4 and PA5 than in the exposure areas PA1 to PA3. For this reason, in the transfer per time, transfer to the exposure areas PA4 and PA5 can be performed in a wider range than transfer to the exposure areas PA1 to PA3.

  Specifically, in one scan when forming the transfer image of the second pattern MP2 in the exposure areas PA4 and PA5, a part of the projection areas PR1 and PR7 and the whole of the projection areas PR2 to PR6 are combined. The area is the entire projection area. Further, in one scan when the first pattern MP1 is formed in the exposure areas PA1 to PA3, an area obtained by combining a part of the projection areas PR2 and PR6 and the whole projection areas PR3 to PR5 is the entire projection area. is there. For this reason, the dimension in the Y direction of the entire projection area when the transfer image of the second pattern MP2 is formed is larger than the dimension in the Y direction of the entire projection area when the transfer image of the first pattern MP1 is formed.

  Therefore, when the second pattern MP2 is transferred to the unused area (exposure areas PA4 and PA5) of the substrate P, the number of times of transfer is less than the number of times of transfer to the exposure areas PA1 to PA3. As described above, by reducing the number of times of transfer to an unused area other than the exposure areas PA1 to PA3 in the substrate P, it is possible to prevent a decrease in productivity.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the above-described embodiment, when exposure of the exposure areas PA4 and PA5 is performed, the control device CONT uses the detection results of the alignment marks AM1 and AM2 detected before exposure of the exposure areas PA1 to PA3. Although the position adjustment is performed, the present invention is not limited to this. For example, only pre-alignment may be performed.

  Further, as shown in FIG. 17, for example, alignment marks AM3 and AM4 are arranged in the exposure area PA4 and the exposure area PA5 of the substrate P, and the alignment marks AM3 and AM4 are detected when the exposure areas PA4 and PA5 are exposed. It is possible to adjust the position of the substrate stage 2 using the detection result (second substrate adjustment step).

  In the above-described embodiment, the peripheral pattern MPA has been described by taking as an example the configuration in which the peripheral pattern MPA is arranged to be connected to one end portion of the first pattern MP1, and is arranged so as to sandwich the one end portion. For example, the peripheral pattern MPA may be arranged on one side of the first pattern MP1. Further, the peripheral pattern MPA may be configured to be continuous with, for example, the central portion instead of one end portion of the first pattern MP1.

  In the above embodiment, the first pattern MP1 is transferred to the exposure areas PA1 to PA3, and then the second pattern MP2 is transferred to the exposure areas PA4 and PA5. The first pattern MP1 may be transferred to the exposure areas PA1 to PA3 after the second pattern MP2 is transferred to the exposure areas PA4 and PA5.

  Note that the use of the exposure apparatus EX is not limited to a liquid crystal exposure apparatus that exposes a liquid crystal display element pattern on a square glass plate. For example, an exposure apparatus for manufacturing a semiconductor or a thin film magnetic head is manufactured. Therefore, the present invention can be widely applied to an exposure apparatus.

The light source of the exposure apparatus EX of this embodiment is not only g-line (436 nm), h-line (405 nm), i-line (365 nm), but also KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ laser ( 157 nm) can be used.

  Each magnification of the projection optical systems PL1 to PL5 is not limited to the equal magnification system, and may be either a reduction system or an enlargement system.

  In the embodiment described above, the case of manufacturing a liquid crystal display element has been described as an example, but of course, not only an exposure apparatus used for manufacturing a liquid crystal display element but also a display including a semiconductor element or the like. An exposure apparatus used to transfer a device pattern onto a semiconductor substrate, an exposure apparatus used to manufacture a thin film magnetic head to transfer a device pattern onto a ceramic wafer, and an exposure apparatus used to manufacture an image sensor such as a CCD The present invention can also be applied to.

  In the above-described embodiment, the present invention is applied to a multi-scanning projection exposure apparatus in which each projection optical system PL1 to PL5 has a pair of catadioptric optical systems 31 and 32. The present invention can also be applied to a multi-scanning projection exposure apparatus of a type having two or more imaging optical systems. In the above-described embodiment, the case where the projection optical systems PL1 to PL5 are configured as a multi type has been described as an example. However, the present invention is a projection optical system other than the multi type, that is, a projection optical system having a single lens barrel. It can also be applied to.

  Next, an embodiment of a method of manufacturing a micro device using an exposure apparatus according to an embodiment of the present invention in a lithography process will be described. FIG. 18 is a flowchart showing a part of a manufacturing process when manufacturing a semiconductor device as a micro device. First, in step S10 of FIG. 18, a metal film is deposited on one lot of wafers. In the next step S12, a photoresist is applied on the metal film on the wafer of one lot. Thereafter, in step S14, using the exposure apparatus EX shown in FIG. 1, the image of the pattern on the mask M is sequentially exposed to each shot area on the wafer of one lot via the projection optical system (projection system). Transferred (transfer process).

  Thereafter, in step S16, the photoresist on the one lot of wafers is developed (development process), and then in step S18, the resist pattern is used as an etching mask on the one lot of wafers to form a mask. A circuit pattern corresponding to the upper pattern is formed in each shot area on each wafer. Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the semiconductor device manufacturing method described above, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput.

  In the exposure apparatus EX shown in FIG. 1, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on the substrate P. Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. FIG. 19 is a flowchart showing a part of a manufacturing process in manufacturing a liquid crystal display element as a micro device.

  In the pattern forming step S20 in FIG. 19, a so-called photolithography step is performed in which the pattern of the mask M is transferred and exposed to a photosensitive substrate (such as a glass substrate coated with a resist) using the exposure apparatus EX of the present embodiment. The By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a development step, an etching step, and a reticle peeling step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S22.

  Next, in the color filter forming step S22, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. And cell assembly process S24 is performed after color filter formation process S22. In the cell assembly step S24, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S20 and the color filter obtained in the color filter formation step S22.

  In the cell assembling step S24, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step S20 and the color filter obtained in the color filter forming step S22. ). Thereafter, in a module assembly step S26, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete the liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high throughput.

  EX ... Exposure apparatus M ... Mask P ... Substrate MP1 ... First pattern MP2 ... Second pattern MPA ... Peripheral pattern BX (BX1, BX2) ... X blind BY (BY1, BY2) ... Y blind ACX, ACY ... Drive mechanism CONT ... Control device

Claims (18)

An exposure method for exposing a substrate,
Of the mask having the first pattern and the peripheral pattern provided around the first pattern, a first transfer step of transferring the first pattern to the substrate a plurality of times,
A second transfer step of transferring a second pattern including a part of the first pattern and the peripheral pattern to a region out of the region of the substrate where the first pattern is transferred. The exposure method according to claim 1, wherein in the second transfer step, the second pattern is transferred a number of times less than the number of transfers in the first transfer step. The first transfer step includes transferring the first pattern by scanning exposure light in a first direction;
The second transfer step includes transferring the second pattern by scanning the exposure light in the first direction,
The first pattern of the scanning area of the second pattern by one scan is adjusted by adjusting a light shielding amount of the exposure light by moving a light shielding part that shields a part of the exposure light on and off the optical path of the exposure light. The first pattern scan area and the second pattern scan so that the dimension in the second direction orthogonal to the direction is larger than the dimension in the second direction of the first pattern scan area in one scan. The exposure method according to claim 1, further comprising an adjustment step of adjusting the region. An exposure method for exposing a substrate,
Of the mask having the first pattern and the peripheral pattern provided around the first pattern, the exposure light passing through the first pattern is scanned in the first direction of the substrate to cause the first to the substrate. A first transfer step of transferring a pattern;
Scanning the exposure light in the first direction through a second pattern including a part of the first pattern and the peripheral pattern in a region outside the region where the first pattern is transferred of the substrate. A second transfer step for transferring the second pattern;
The dimension in the second direction orthogonal to the first direction of the scanning area of the second pattern by one scanning is larger than the dimension in the second direction of the scanning area of the first pattern by one scanning. And an adjusting step of adjusting the scanning area of the first pattern and the scanning area of the second pattern. The exposure method according to any one of claims 1 to 4, wherein the first transfer step is performed prior to the second transfer step. The substrate adjustment step of adjusting at least one of the position and orientation of the substrate prior to at least one of the first transfer step and the second transfer step. The exposure method according to item. The exposure method according to claim 6, wherein the substrate adjustment step includes detecting information related to the position and orientation of the substrate and adjusting at least one of the position and orientation of the substrate based on a detection result. The first transfer step is performed prior to the second transfer step,
The substrate adjustment step includes a first substrate adjustment step performed prior to the first transfer step, and a second substrate adjustment step performed prior to the second transfer step,
The first substrate adjustment step includes detecting information on the position and orientation of the substrate, and adjusting at least one of the position and orientation of the substrate based on a detection result;
The exposure method according to claim 6, wherein the second substrate adjustment step includes adjusting at least one of the position and orientation of the substrate based on a detection result in the first substrate adjustment step. An exposure apparatus for exposing a substrate,
Of the mask having the first pattern and the peripheral pattern provided around the first pattern, the first pattern is transferred to the substrate a plurality of times, and the first pattern is transferred from the substrate. An exposure apparatus comprising: a control device that transfers a part of the first pattern and a second pattern including the peripheral pattern to a region outside the region. The control device scans exposure light in a first direction to transfer the first pattern and scans the exposure light in the first direction to transfer the second pattern,
The dimension in the second direction orthogonal to the first direction of the scanning area of the second pattern by one scanning is larger than the dimension in the second direction of the scanning area of the first pattern by one scanning. And an adjustment device for adjusting the scanning area of the first pattern and the scanning area of the second pattern,
The adjusting device is movably provided so as to be put in and out of the optical path of the exposure light, and adjusts the light shielding amount of the exposure light by moving the light shielding portion to shield a part of the exposure light. An exposure method according to claim 9. An exposure apparatus for exposing a substrate,
Of the mask having the first pattern and the peripheral pattern provided around the first pattern, the exposure light passing through the first pattern is scanned in the first direction of the substrate to cause the first to the substrate. And transferring the exposure light through the second pattern including a part of the first pattern and the peripheral pattern to a region out of the region where the first pattern is transferred in the substrate. A controller that scans in the direction and transfers the second pattern;
The dimension in the second direction orthogonal to the first direction of the scanning area of the second pattern by one scanning is larger than the dimension in the second direction of the scanning area of the first pattern by one scanning. And an adjusting device for adjusting the scanning area of the first pattern and the scanning area of the second pattern. The adjusting device is movably provided so as to be put in and out of the optical path of the exposure light, and adjusts the light shielding amount of the exposure light by moving the light shielding portion to shield a part of the exposure light. The exposure apparatus according to claim 11, further comprising: a position adjusting unit that performs the adjustment. A first pattern to be transferred to the substrate;
A second pattern to be transferred to a region out of the substrate from which the first pattern is transferred,
The second pattern includes a part of the first pattern and a peripheral pattern provided around the first pattern. The mask according to claim 13, wherein the peripheral pattern is formed to be continuous with the first pattern. The mask according to claim 13 or 14, wherein the peripheral pattern is formed such that the transmittance of the exposure light per unit area is equal to the first pattern. The mask according to any one of claims 13 to 15, wherein the peripheral pattern includes a shape equal to the first pattern. The mask according to any one of claims 13 to 15, wherein the peripheral pattern is formed in a shape different from that of the first pattern. Exposing the substrate using the exposure method according to any one of claims 1 to 8,
Developing the exposed substrate to form an exposure pattern layer corresponding to the first pattern and the second pattern;
Processing the substrate via the exposed pattern layer.

Images