JP2012004259A - Method, apparatus and system for exposure, and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable acquisition of high throughput with highly accurate adjustment of a transfer condition.SOLUTION: An exposure method for transferring on a substrate a first pattern, a second pattern and a third pattern in an overlaid manner includes: a first transfer step for transferring the first pattern on the substrate with a predetermined transfer condition; a first measurement step for measuring pattern information of the transferred first pattern; a first adjustment step for adjusting the transfer condition, based on the first measurement result related to the pattern information of the first pattern; a second transfer step for transferring the second pattern on the substrate under the adjusted transfer condition; a second measurement step for measuring the pattern information of the transferred second pattern; a second adjustment step for adjusting the transfer condition, based on the second measurement result related to the pattern information of the second pattern and the first measurement result; and a third transfer step for transferring the third pattern on the substrate under the adjusted transfer condition.

Description

  The present invention relates to an exposure method, an exposure apparatus, an exposure system, and a device manufacturing method.

  Conventionally, various devices such as a liquid crystal display device and a semiconductor device are manufactured using a photolithography process in which a pattern provided on a mask or the like is transferred to a photosensitive substrate. In the exposure apparatus used in this photolithography process, for example, the pattern formed on the mask is applied to the photosensitive substrate while synchronously scanning the mask stage on which the mask is placed and the substrate stage on which the photosensitive substrate is placed. Transcript.

  Generally, in a photolithography process for a liquid crystal display device, a plurality of exposure areas (areas corresponding to the display screen of the liquid crystal display device) are set on one photosensitive substrate, and each exposure area is sequentially exposed to transfer a pattern. (For example, refer to Patent Document 1). In the exposure method described in Patent Document 1, an alignment mark provided in the vicinity of each exposure area is detected, and an exposure process is performed by performing alignment (positioning) for each exposure area based on the detection result.

JP 2003-347184 A

  However, in the above-described exposure method, since all the alignment marks provided for each exposure area are detected for each photosensitive substrate, the exposure can be performed with high precision alignment for each exposure area. The demand for higher throughput could not be fully satisfied.

  An object of an aspect of the present invention is to provide an exposure method, an exposure apparatus, an exposure system, and a device manufacturing method that can adjust transfer conditions with high accuracy and can achieve high throughput.

  According to a first aspect of the present invention, there is provided an exposure method for transferring a first pattern, a second pattern, and a third pattern on a substrate in superimposition, wherein the first pattern is transferred to the substrate under predetermined transfer conditions. A transfer step, a first measurement step for measuring pattern information of the transferred first pattern, a first adjustment step for adjusting transfer conditions based on a first measurement result relating to the pattern information of the first pattern, and adjustment A second transfer step for transferring the second pattern to the substrate under transfer conditions; a first measurement step for measuring pattern information of the transferred second pattern; a second measurement result relating to the pattern information of the second pattern; Provided is an exposure method including a second adjustment step for adjusting transfer conditions based on measurement results, and a third transfer step for transferring a third pattern to a substrate under the adjusted transfer conditions It is.

  According to a second aspect of the present invention, there is provided an exposure method for transferring a first pattern, a second pattern and a third pattern on a plurality of substrates in an overlapping manner, wherein the first pattern is transferred to a plurality of substrates under a predetermined transfer condition. First transfer step for transferring, first measurement step for measuring the pattern information of the transferred first pattern for each substrate, and adjustment of transfer conditions for each substrate based on the first measurement result relating to the pattern information of the first pattern A first adjustment step, a second transfer step for transferring the second pattern to the plurality of substrates under the adjusted transfer conditions, a second measurement step for measuring the pattern information of the transferred second pattern for each substrate, A second adjustment step of adjusting the transfer condition for each substrate based on the first measurement result on the same substrate among the plurality of substrates and the second measurement result on the pattern information of the second pattern; Exposure method and a third transfer step of transferring the third pattern is provided on a plurality of substrates in integer transcription conditions.

  According to the third aspect of the present invention, a transfer device that transfers the first pattern, the second pattern, and the third pattern on the substrate, and at least the first pattern and the first pattern that are transferred to the substrate disposed in the transfer device. A measuring device that measures pattern information of two patterns, an adjustment device that adjusts transfer conditions of a substrate placed in the transfer device, a first transfer operation that transfers a first pattern to the substrate under predetermined transfer conditions, and a transfer to the substrate A first measurement operation for measuring the pattern information of the first pattern, a first adjustment operation for adjusting the transfer condition based on the first measurement result related to the pattern information of the first pattern, and a second adjustment operation on the substrate under the adjusted transfer condition. The second transfer operation for transferring the pattern, the second measurement operation for measuring the pattern information of the transferred second pattern, the second measurement result regarding the pattern information of the second pattern, and the first measurement result Second adjustment operation for adjusting the transfer condition based on, and an exposure apparatus and a control device to perform a third transfer operation, to transfer the third pattern on the substrate in a coordinated transfer condition is provided.

  According to the fourth aspect of the present invention, a transfer device for transferring the first pattern, the second pattern, and the third pattern on a plurality of substrates in an overlapping manner, and at least a first image transferred to each substrate disposed in the transfer device. A measurement device that measures pattern information of one pattern and a second pattern for each substrate, an adjustment device that adjusts the transfer condition of each substrate arranged in the transfer device for each substrate, and a predetermined first pattern on a plurality of substrates For each substrate based on the first transfer operation for transferring the first pattern, the first measurement operation for measuring the pattern information of the transferred first pattern for each substrate, and the first measurement result for the pattern information of the first pattern. First adjustment operation to adjust transfer conditions, second transfer operation to transfer second patterns to multiple substrates under adjusted transfer conditions, and pattern information of transferred second patterns measured for each substrate And a second adjustment operation for adjusting the transfer condition for each substrate based on the first measurement result for the same substrate and the second measurement result for the pattern information of the second pattern among the plurality of substrates. An exposure apparatus is provided that includes a control device that performs a third transfer operation of transferring a third pattern onto a plurality of substrates under adjusted transfer conditions.

  According to the fifth aspect of the present invention, a transfer device that transfers the first pattern, the second pattern, and the third pattern on the substrate, and an adjustment device that adjusts the transfer conditions of the substrate placed in the transfer device, A measurement unit for measuring pattern information of at least a first pattern and a second pattern transferred to a substrate disposed in a transfer device. First transfer operation for transferring a first pattern to a substrate under a predetermined transfer condition, a first measurement operation for measuring pattern information of the first pattern transferred to the substrate, and a first measurement relating to pattern information of the first pattern A first adjustment operation for adjusting the transfer conditions based on the result, a second transfer operation for transferring the second pattern to the substrate under the adjusted transfer conditions, and a second for measuring pattern information of the transferred second pattern A second adjustment operation for adjusting a transfer condition based on the second measurement result relating to the pattern information of the second pattern and the first measurement result, and a third pattern is transferred to the substrate under the adjusted transfer condition. An exposure system is provided that includes a control device that performs a third transfer operation.

  According to the sixth aspect of the present invention, the transfer device for transferring the first pattern, the second pattern, and the third pattern on a plurality of substrates, and the transfer conditions of each substrate arranged in the transfer device are set as the substrate. An exposure apparatus having an adjustment device for adjusting each time, and a transport unit for transporting the substrate between the exposure apparatus and at least a first pattern and a first pattern transferred to each substrate disposed in the transfer device A measuring device that measures pattern information of two patterns for each substrate, a first transfer operation that transfers the first pattern to a plurality of substrates under a predetermined transfer condition, and pattern information of the transferred first pattern for each substrate The first measurement operation, the first adjustment operation for adjusting the transfer condition for each substrate based on the first measurement result relating to the pattern information of the first pattern, and the transfer of the second pattern to the plurality of substrates under the adjusted transfer condition. A second transfer operation, a second measurement operation for measuring the pattern information of the transferred second pattern for each substrate, a first measurement result for the same substrate among a plurality of substrates, and pattern information of the second pattern A control device for performing a second adjustment operation for adjusting a transfer condition for each substrate based on a second measurement result, and a third transfer operation for transferring a third pattern to a plurality of substrates under the adjusted transfer condition; An exposure system is provided.

  According to the seventh aspect of the present invention, the substrate is exposed using the exposure method according to the aspect of the present invention, and the exposed substrate is developed to correspond to the first pattern, the second pattern, and the third pattern. There is provided a device manufacturing method including forming an exposed pattern layer to be processed and processing a substrate through the exposed pattern layer.

  According to the aspect of the present invention, it is possible to adjust transfer conditions with high accuracy and to achieve high throughput.

1 is a schematic block diagram showing an example of an exposure apparatus according to a first embodiment of the present invention. 1 is a perspective view showing an example of an exposure apparatus according to the present embodiment. The figure which shows an example of the illumination system which concerns on this embodiment. 1 is a diagram showing an example of a projection system and a substrate stage according to the present embodiment. It is a figure which shows an example of the detection system which concerns on this embodiment. The schematic diagram which shows an example of the positional relationship of the illumination area | region, detection area | region, and mask which concerns on this embodiment. The schematic diagram which shows an example of the positional relationship of the projection area | region, detection area | region, and board | substrate which concerns on this embodiment. 6 is a flowchart showing an example of an exposure method according to the present embodiment. FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment. FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment. FIG. 5 is a view showing an example of the operation of the exposure apparatus according to the present embodiment. The figure which shows an example of the exposure result by the exposure apparatus which concerns on this embodiment. The schematic block diagram which shows an example of the exposure system which concerns on 2nd embodiment of this invention. 6 is a flowchart showing an example of an exposure method according to the present embodiment. FIG. 5 is a schematic block diagram that shows another example of the exposure system of the present invention. The figure which shows an example of the exposure result by the exposure apparatus which concerns on this embodiment. The flowchart which shows a part of manufacturing process at the time of manufacturing a semiconductor device. The flowchart which shows a part of manufacturing process at the time of manufacturing a liquid crystal display element.

  Embodiments of the present invention will be described below with reference to the drawings. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

[First embodiment]
FIG. 1 is a schematic block diagram showing an example of an exposure apparatus EX according to the first embodiment of the present invention, and FIG. 2 is a perspective view. 1 and 2, an exposure apparatus EX includes a mask stage 1 that can move while holding a mask M, a substrate stage 2 that can move while holding a substrate P, and a drive system 3 that moves the mask stage 1. A driving system 4 that moves the substrate stage 2, an illumination system IS that illuminates the mask M with the exposure light EL, a projection system PS that projects an image of the pattern of the mask M illuminated by the exposure light EL onto the substrate P, And a control device CONT for controlling the entire operation of the exposure apparatus EX.

  The exposure apparatus EX of the present embodiment includes an interferometer system 6 that measures position information of the mask stage 1 and the substrate stage 2, a first detection system 7 that detects position information of the surface of the mask M, and the surface of the substrate P. A second detection system 8 that detects position information and an alignment system 40 that detects alignment marks on the substrate P are provided.

  The exposure apparatus EX includes a body 13. The body 13 includes, for example, a base plate 10 disposed on a support surface (for example, floor surface) FL in a clean room via a vibration isolation table BL, a first column 11 disposed on the base plate 10, and a first column 11 And a second column 12 disposed on the surface.

  The body 13 supports each of the projection system PS, the mask stage 1 and the substrate stage 2. The projection system PS is supported by the first column 11 via the surface plate 14. The mask stage 1 is supported so as to be movable with respect to the second column 12. The substrate stage 2 is supported so as to be movable with respect to the base plate 10.

  The exposure apparatus EX projects an image of the pattern of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction. That is, the exposure apparatus EX of the present embodiment is a so-called multi-lens scan exposure apparatus. The exposure apparatus EX is provided with a projection system PS having seven projection optical systems PL1 to PL7. The exposure apparatus EX is provided with an illumination system IS. The number of projection optical systems and illumination modules is not limited to seven. For example, the projection system PS may have 11 projection optical systems, and the illumination system IS may have 11 illumination modules.

  The illumination system IS has, for example, seven illumination modules IL1 to IL7. Illumination modules IL1 to IL7 illuminate, for example, seven illumination regions IR1 to IR7 of mask M with exposure light EL having a substantially uniform illuminance distribution. As the exposure light EL emitted from the illumination system IS, for example, bright lines (g-line, h-line, i-line) emitted from a mercury lamp are used.

  The mask stage 1 is movable with respect to the illumination regions IR1 to IR7 while holding the mask M. The mask stage 1 includes a mask holding unit 15 that can hold the mask M. The mask holding unit 15 includes a chuck mechanism that can vacuum-suck the mask M, and holds the mask M in a releasable manner. The mask holding unit 15 holds the mask M so that the lower surface (pattern forming surface) of the mask M and the XY plane are substantially parallel.

  The drive system 3 includes, for example, a linear motor, and can move the mask stage 1 on the guide surface 12G of the second column 12. The mask stage 1 can be moved in the three directions of the X axis, the Y axis, and the θZ direction on the guide surface 12G in a state where the mask M is held by the mask holding unit 15 by the operation of the drive system 3.

  The projection system PS has a plurality of projection optical systems that project the exposure light EL onto predetermined projection regions PR1 to PR7. The projection areas PR1 to PR7 correspond to the irradiation areas of the exposure light EL emitted from the projection optical systems PL1 to PL7. The projection system PS projects pattern images on seven different projection areas PR1 to PR7, respectively. The projection system PS projects an image of the pattern of the mask M at a predetermined projection magnification onto portions of the substrate P that are disposed in the projection regions PR1 to PR7.

  The substrate stage 2 is movable with respect to the projection regions PR1 to PR7 while holding the substrate P. The substrate stage 2 includes a substrate holding unit 16 that can hold the substrate P. The substrate holding unit 16 includes a chuck mechanism capable of vacuum-sucking the substrate P, and holds the substrate P so that the substrate P can be released. The substrate holding unit 16 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel. The drive system 4 includes, for example, a linear motor, and can move the substrate stage 2 on the guide surface 10 </ b> G of the base plate 10. The substrate stage 2 is operated on the guide surface 10G in the state where the substrate P is held by the substrate holding unit 16 by the operation of the drive system 4, and the six on the X axis, Y axis, Z axis, θX, θY, and θZ directions. It can move in the direction.

  FIG. 3 is a schematic configuration diagram illustrating an example of the illumination system IS according to the present embodiment. In FIG. 3, the illumination system IS includes a light source 17 composed of an ultra-high pressure mercury lamp, an elliptic mirror 18 that reflects light emitted from the light source 17, and a dichroic mirror 19 that reflects at least part of the light from the elliptic mirror 18. And a shutter device 20 capable of blocking the progress of light from the dichroic mirror 19, a relay optical system 21 including a collimating lens 21A and a condensing lens 21B on which light from the dichroic mirror 19 is incident, and only light in a predetermined wavelength region. And a light guide unit 23 that branches the light from the relay optical system 21 and supplies it to each of the plurality of illumination modules IL1 to IL7.

  In FIG. 3, only the first illumination module IL1 is shown among the first to seventh illumination modules IL1 to IL7. The second to seventh illumination modules IL2 to IL7 have the same configuration as the first illumination module IL1. In the following description, among the first to seventh illumination modules IL1 to IL7, the first illumination module IL1 will be mainly described, and the description of the second to seventh illumination modules IL2 to IL7 will be simplified or omitted.

  The light from the relay optical system 21 enters the incident end 24 of the light guide unit 23 and is emitted from a plurality of emission ends 25A to 25G. The first illumination module IL1 includes a shutter device 26 that can block the progress of light from the exit end 25A, a collimator lens 27 that is supplied with light from the exit end 25A, and a fly that is supplied with light from the collimator lens 27. An eye integrator 28 and a condenser lens 29 to which light from the fly eye integrator 28 is supplied are provided. The exposure light EL emitted from the condenser lens 29 is applied to the illumination area IR1. The first illumination module IL1 illuminates the illumination region IR1 with the exposure light EL having a uniform illuminance distribution.

  The second to seventh illumination modules IL2 to IL7 have the same configuration as the first illumination module IL1. Each of the second to seventh illumination modules IL2 to IL7 illuminates the illumination regions IR2 to IR7 with the exposure light EL having a uniform illuminance distribution. The illumination system IS illuminates at least a part of the mask M arranged in the illumination areas IR1 to IR7 with the exposure light EL having a uniform illuminance distribution.

  FIG. 4 is a diagram showing an example of the projection system PS, the first detection system 7, the second detection system 8, the alignment system 9, and the substrate stage 2 arranged in the projection regions PR1 to PR7 according to the present embodiment.

  First, the first projection optical system PL1 will be described. In FIG. 4, the first projection optical system PL1 projects an image of the pattern of the mask M illuminated with the exposure light EL by the first illumination module IL1 onto the substrate P. The first projection optical system PL1 includes an image plane adjustment unit 33, a shift adjustment unit 34, two sets of catadioptric optical systems 31, 32, a field stop 35, and a scaling adjustment unit 36.

  The exposure light EL irradiated to the illumination area IR1 and transmitted through the mask M enters the image plane adjustment unit 33. The image plane adjustment unit 33 can adjust the position of the image plane of the first projection optical system PL1 (position in the Z axis, θX, and θY directions). The image plane adjustment unit 33 is disposed at a position that is optically conjugate with respect to the mask M and the substrate P. The image plane adjustment unit 33 includes a first optical member 33A and a second optical member 33B, and a drive device (not shown) that can move the first optical member 33A relative to the second optical member 33B. The first optical member 33A and the second optical member 33B are opposed to each other through a predetermined gap by a gas bearing. The first optical member 33A and the second optical member 33B are glass plates capable of transmitting the exposure light EL, and each have a wedge shape. The control device CONT can adjust the position of the image plane of the first projection optical system PL1 by operating the drive device and adjusting the positional relationship between the first optical member 33A and the second optical member 33B. . The exposure light EL that has passed through the image plane adjustment unit 33 enters the shift adjustment unit 34.

  The shift adjustment unit 34 can shift the image of the pattern of the mask M on the substrate P in the X-axis direction and the Y-axis direction. The exposure light EL transmitted through the shift adjustment unit 34 enters the first set of catadioptric optical system 31. The catadioptric optical system 31 forms an intermediate image of the pattern of the mask M. The exposure light EL emitted from the catadioptric optical system 31 is supplied to the field stop 35.

  The field stop 35 is disposed at the position of the intermediate image of the pattern formed by the catadioptric optical system 31. The field stop 35 defines the projection region PR1. In the present embodiment, the field stop 35 defines the projection region PR1 on the substrate P in a trapezoidal shape. The exposure light EL that has passed through the field stop 35 enters the second set of catadioptric optical system 32.

  The catadioptric optical system 32 is configured in the same manner as the catadioptric optical system 31. The exposure light EL emitted from the catadioptric optical system 32 enters the scaling adjustment unit 36. The scaling adjustment unit 36 can adjust the magnification (scaling) of the pattern image of the mask M. The exposure light EL that has passed through the scaling adjustment unit 36 is irradiated onto the substrate P. In the present embodiment, the first projection optical system PL1 projects an image of the pattern of the mask M onto the substrate P at an erecting equal magnification.

  The above-described image plane adjustment unit 33, shift adjustment unit 34, and scaling adjustment unit 36 constitute an image formation characteristic adjustment device 30 that adjusts the image formation characteristic (optical characteristic) of the first projection optical system PL1. The imaging characteristic adjusting device 30 is capable of adjusting the position of the image plane of the first projection optical system PL1 with respect to the six directions of the X axis, the Y axis, the Z axis, the θX, the θY, and the θZ directions. The magnification can be adjusted.

  The first projection optical system PL1 has been described above. The second to seventh projection optical systems PL2 to PL7 have the same configuration as the first projection optical system PL1. Description of the second to seventh projection optical systems PL2 to PL7 is omitted.

  As shown in FIGS. 2 and 4, a reference member 43 is arranged on the upper surface of the substrate stage 2 on the + X side with respect to the substrate holding unit 16. The upper surface 44 of the reference member 43 is disposed in substantially the same plane as the surface of the substrate P held by the substrate holding part 16. Further, a transmissive portion 45 that can transmit the exposure light EL is disposed on the upper surface 44 of the reference member 43. Below the reference member 43, a light receiving device 46 capable of receiving the light transmitted through the transmitting portion 45 is disposed. The light receiving device 46 includes a lens system 47 on which light that has passed through the transmission unit 45 enters, and an optical sensor 48 that receives the light that has passed through the lens system 47. In the present embodiment, the optical sensor 48 includes an image sensor (CCD). The optical sensor 48 outputs a signal corresponding to the received light to the control device CONT.

  An optical member 50 having a transmission part 49 is arranged on the upper surface of the substrate stage 2 on the −X side with respect to the substrate holding part 16. Below the optical member 50, a light receiving device 51 capable of receiving light transmitted through the transmission portion 49 is disposed. The light receiving device 51 includes a lens system 52 on which light that has passed through the transmission unit 49 enters, and an optical sensor 53 that receives light that has passed through the lens system 52. The optical sensor 53 outputs a signal corresponding to the received light to the control device CONT.

Next, the interferometer system 6, the first and second detection systems 7, 8 and the alignment system 9 will be described. 1 and 2, the interferometer system 6 includes a laser interferometer unit 6A that measures position information of the mask stage 1 and a laser interferometer unit 6B that measures position information of the substrate stage 2. The laser interferometer unit 6 </ b> A can measure position information of the mask stage 1 using a measurement mirror 1 </ b> R disposed on the mask stage 1.
The laser interferometer unit 6 </ b> B can measure the position information of the substrate stage 2 using the measurement mirror 2 </ b> R disposed on the substrate stage 2. In the present embodiment, the interferometer system 6 can measure position information of the mask stage 1 and the substrate stage 2 with respect to the X axis, Y axis, and θX directions using the laser interferometer units 6A and 6B.

  The first detection system 7 detects the position of the lower surface (pattern formation surface) of the mask M in the Z-axis direction. The first detection system 7 is a so-called oblique incidence type multi-point focus / leveling detection system, and as shown in FIG. 4, a plurality of detectors arranged to face the lower surface of the mask M held on the mask stage 1. 7A-7F. Each of detectors 7A to 7F includes a projection unit that irradiates detection light to detection regions MZ1 to MZ6 and a light receiving unit that can receive detection light from the lower surface of mask M arranged in detection regions MZ1 to MZ6. .

  The second detection system 8 detects the position of the surface (exposure surface) of the substrate P in the Z-axis direction. The second detection system 8 is a so-called oblique incidence type multi-point focus / leveling detection system, and as shown in FIG. 4, a plurality of detectors arranged to face the surface of the substrate P held by the substrate stage 2. 8A-8H. Each of detectors 8A to 8H includes a projection unit that irradiates detection light to detection regions PZ1 to PZ8 and a light receiving unit that can receive detection light from the surface of substrate P arranged in detection regions PZ1 to PZ8. .

  FIG. 5 is a schematic configuration diagram illustrating an example of the detector 7A. As shown in FIG. 5, the detector 7A includes a light projecting unit 54 that irradiates detection light to the detection region MZ1, and a light receiving unit 55 that can receive the detection light from the lower surface of the mask M arranged in the detection region MZ1. Have The light projecting unit 54 tilts the light source 56 that emits the detection light, the light transmission lens system 57 that receives the detection light emitted from the light source 56, and the light that has passed through the light transmission lens system 57 toward the lower surface of the mask M. And a mirror 58 guided from the direction. The light receiving unit 55 includes a mirror 59 that guides the detection light reflected on the lower surface of the mask M and reflected by the lower surface to the light receiving lens system 60, and an image sensor (CCD) 61 that receives the light that has passed through the light receiving lens system 60. I have. The light transmission lens system 57 irradiates the mask M after shaping the detection light into, for example, a slit shape. As shown in FIG. 5, when the position of the lower surface of the mask M arranged in the detection region MZ1 in the Z-axis direction changes, the detection with respect to the image sensor 61 is performed according to the amount of displacement of the lower surface of the mask M in the Z-axis direction. The incident position of light is displaced in the X-axis direction. The imaging signal of the imaging device 61 is output to the control device CONT, and the control device CONT obtains the position of the lower surface of the mask M arranged in the detection region MZ1 in the Z-axis direction based on the signal from the imaging device 61. Can do.

  The configurations of the detectors 7B to 7F and the detectors 8A to 8H are the same as the configuration of the detector 7A shown in FIG. The detectors 7B to 7F can determine the positions in the Z-axis direction of the lower surface of the mask M arranged in the detection regions MZ2 to MZ6. The detectors 8A to 8H can determine the positions in the Z-axis direction of the surface of the substrate P arranged in the detection regions PZ1 to PZ8.

The alignment system 9 detects an alignment mark provided on the substrate P.
The alignment system 9 is a so-called off-axis alignment system, and includes a plurality of microscopes 9A to 9F arranged to face the surface of the substrate P held on the substrate stage 2 as shown in FIG. Each of the detectors 9A to 9F includes a projection unit that irradiates detection light to the detection areas AL1 to AL6, and a light receiving unit that can acquire an optical image of the alignment marks arranged in the detection areas AL1 to AL6.

  FIG. 6 is a schematic diagram illustrating an example of a positional relationship between the illumination regions IR1 to IR7, the detection regions MZ1 to MZ6, and the mask M, and illustrates a positional relationship in a plane including the lower surface of the mask M. As shown in FIG. 6, the lower surface of the mask M has a pattern region MA in which a pattern is formed.

  In the present embodiment, each of the illumination areas IR1 to IR7 is rectangular in the XY plane. In the present embodiment, the illumination areas IR1, IR3, IR5, IR7 by the illumination modules IL1, IL3, IL5, IL7 are arranged at substantially equal intervals in the Y-axis direction, and the illumination areas IR2, IR4 by the illumination modules IL2, IL4, IL6 are arranged. , IR6 are arranged at substantially equal intervals in the Y-axis direction. The illumination areas IR1, IR3, IR5, IR7 are arranged on the −X side with respect to the illumination areas IR2, IR4, IR6. In addition, illumination areas IR2, IR4, and IR6 are arranged between illumination areas IR1, IR3, IR5, and IR7 with respect to the Y-axis direction.

  In the present embodiment, the detection areas MZ1, MZ3, and MZ5 by the detectors 7A, 7C, and 7E are arranged on the −X side with respect to the illumination areas IR1 to IR7, and the detection areas MZ2, MZ4 by the detectors 7B, 7D, and 7F. , MZ6 are arranged on the + X side with respect to the illumination regions IR1 to IR7. Further, the detection areas MZ1, MZ3, and MZ5 are arranged at almost equal intervals in the Y-axis direction, and the detection areas MZ2, MZ4, and MZ6 are arranged at almost equal intervals in the Y-axis direction.

  Among the plurality of detection regions MZ1 to MZ6, the interval between the two outer detection regions MZ1 and the detection region MZ5 in the Y-axis direction (the interval between the detection region MZ2 and the detection region MZ6) is among the plurality of illumination regions IR1 to IR7. , Smaller than the interval between the −Y side edge of the two outer illumination areas IR1 and the + Y side edge of the illumination area IR7 with respect to the Y-axis direction.

  In addition, among the plurality of detection areas MZ1 to MZ6, the distance between the two outer detection areas MZ1 and the detection area MZ5 in the Y-axis direction (the distance between the detection area MZ2 and the detection area MZ6) is −Y side of the pattern area MA. Is substantially equal to or slightly smaller than the interval between the edge of the + Y side and the + Y side edge.

  The control device CONT moves the mask stage 1 in the X-axis direction and moves the lower surface of the mask M held on the mask stage 1 with respect to the detection areas MZ1 to MZ6 of the detectors 7A to 7F in the X-axis direction. A plurality of detection points set on the lower surface (pattern region MA) of the mask M can be arranged in the detection areas MZ1 to MZ6 of the detectors 7A to 7F, and the positions of the plurality of detection points in the Z-axis direction can be detected. It is. The control device CONT outputs the Z of the lower surface (pattern region MA) of the mask M based on the position in the Z-axis direction of the lower surface of the mask M detected at each of the plurality of detection points, which is output from the first detection system 7. Position information (map data) regarding the axes, θX, and θY directions can be acquired.

  FIG. 7 is a schematic diagram illustrating an example of the positional relationship between the projection areas PR1 to PR7, the detection areas PZ1 to PZ8, the detection areas AL1 to AL6, and the substrate P, and the position within the plane including the surface of the substrate P. Showing the relationship. As shown in FIG. 7, in the present embodiment, the surface of the substrate P has a plurality of exposure areas (processed areas) PA1 to PA6 onto which an image of the pattern of the mask M is projected. In the present embodiment, the surface of the substrate P has six exposure areas PA1 to PA6. The exposure areas PA1, PA2, and PA3 are arranged at approximately equal intervals in the Y axis direction, and the exposure areas PA4, PA5, and PA6 are arranged at approximately equal intervals in the Y axis direction. The exposure areas PA1, PA2, and PA3 are arranged on the + X side with respect to the exposure areas PA4, PA5, and PA6.

  In the present embodiment, each of the projection areas PR1 to PR7 is rectangular in the XY plane. In the present embodiment, projection regions PR1, PR3, PR5, PR7 by the projection optical systems PL1, PL3, PL5, PL7 are arranged at substantially equal intervals in the Y-axis direction, and projection regions PR2 by the projection optical systems PL2, PL4, PL6 are arranged. , PR4, PR6 are arranged at substantially equal intervals in the Y-axis direction. The projection areas PR1, PR3, PR5, and PR7 are arranged on the −X side with respect to the projection areas PR2, PR4, and PR6. Further, the projection areas PR2, PR4, and PR6 are arranged between the projection areas PR1, PR3, PR5, and PR7 with respect to the Y-axis direction.

  In the present embodiment, detection areas PZ1, PZ3, PZ5, PZ7, and PZ8 by the detectors 8A, 8C, 8E, 8G, and 8H are arranged on the −X side with respect to the projection areas PR1 to PR7, and the detectors 8B and 8D. , 8F detection areas PZ2, PZ4, and PZ6 are arranged on the + X side with respect to the projection areas PR1 to PR7. Further, the detection areas PZ1, PZ3, PZ5, PZ7, and PZ8 are arranged at substantially equal intervals in the Y-axis direction, and the detection areas PZ2, PZ4, and PZ6 are arranged at substantially equal intervals in the Y-axis direction.

  Among the plurality of detection areas PZ1 to PZ8, the interval between the two outer detection areas PZ1 and the detection area PZ8 in the Y-axis direction is the -Y side of the two outer projection areas PR1 among the plurality of projection areas PR1 to PR7. It is larger than the interval between the edge and the + Y side edge of the projection region PR7. In addition, among the central PZ2 to PZ7 in the Y-axis direction, the interval between the two outer detection regions PZ3 and the detection region PZ7 in the Y-axis direction (the interval between the detection region PZ2 and the detection region PZ6) is a plurality of projection regions PR1. Is smaller than the interval between the −Y side edge of the two outer projection areas PR1 and the + Y side edge of the projection area PR7.

  In addition, among the plurality of detection areas PZ1 to PZ8, the distance between the two outer detection areas PZ1 and the detection area PZ8 in the Y-axis direction is the two outer exposure areas PA1 (PA4) among the plurality of exposure areas PA1 to PA6. −Y side edge of the exposure area PA3 (PA6) and the + Y side edge of the exposure area PA3 (PA6), slightly smaller than the −Y side edge of the exposure area PA2 (PA5) and the + Y side edge of the exposure area PA2 (PA5) Greater than the distance between.

  The control device CONT moves the substrate stage 2 in the X-axis direction, moves the surface of the substrate P held on the substrate stage 2 with respect to the detection regions PZ1 to PZ8 of the detectors 8A to 8H in the X-axis direction. A plurality of detection points set on the surface (exposure areas PA1 to PA6) of the substrate P are arranged in the detection areas PZ1 to PZ8 of the detectors 8A to 8H, and the positions of the plurality of detection points in the Z-axis direction are determined. It can be detected. The control device CONT outputs the surface of the substrate P (exposure areas PA1 to PA6) based on the position in the Z-axis direction of the surface of the substrate P detected from each of the plurality of detection points, which is output from the second detection system 8. Position information (map data) in the Z-axis, θX, and θY directions can be acquired.

  In the present embodiment, the detection areas AL1 to AL6 by the microscopes 9A to 9F are arranged on the −X side with respect to the detection areas PZ1, PZ3, PZ5, PR7, and PZ8. The detection areas AL1 to AL6 are arranged away from each other in the Y-axis direction. Among the plurality of detection areas AL1 to AL6, the distance between the two outer detection areas AL1 and the detection area AL6 with respect to the Y-axis direction is the two outer exposure areas PA1 (with respect to the Y-axis direction among the plurality of exposure areas PA1 to PA6). The distance between the −Y side edge of PA4) and the + Y side edge of exposure area PA3 (PA6) is substantially equal.

  The alignment system 9 detects a plurality of alignment marks m1 to m6 provided on the substrate P. In this embodiment, six alignment marks m1 to m6 are arranged on the substrate P so as to be separated from each other in the Y axis direction, and groups of these alignment marks m1 to m6 are arranged at four places separated in the X axis direction. . Alignment marks m1 and m2 are provided adjacent to both ends of exposure areas PA1 and PA4, and alignment marks m3 and m4 are provided adjacent to both ends of exposure areas PA2 and PA5. m6 is provided adjacent to both ends of the exposure areas PA3 and PA6.

  In the present embodiment, microscopes 9A to 9F (detection areas AL1 to AL6) are arranged corresponding to the six alignment marks m1 to m6 arranged on the substrate P so as to be separated in the Y-axis direction. The microscopes 9A to 9F are provided so that the alignment marks m1 to m6 are simultaneously arranged in the detection areas AL1 to AL6. The alignment system 9 can simultaneously detect the six alignment marks m1 to m6 using the microscopes 9A to 9F.

  In the above-described exposure apparatus EX, at least a part of the operation such as the exposure operation is executed based on control information (exposure control information) relating to predetermined exposure. The exposure control information includes a control command group that defines the operation of the exposure apparatus EX, and is also called an exposure recipe. In the following description, the control information related to exposure is appropriately referred to as an exposure recipe.

  The exposure recipe is stored in advance in the control device CONT. The operating conditions of the exposure apparatus EX at least during exposure of the substrate P (during the irradiation operation of the exposure light EL on the mask M and the substrate P) are determined in advance by the exposure recipe. The control device CONT controls the operation of the exposure device EX based on the exposure recipe.

  The exposure recipe includes conditions for moving the mask stage 1 and the substrate stage 2 when the substrate P is exposed. When the substrate P is exposed, the control device CONT moves the mask stage 1 and the substrate stage 2 based on the exposure recipe. The exposure apparatus EX of the present embodiment is a multi-lens scan exposure apparatus, and the mask M and the substrate P are moved in a predetermined scanning direction in the XY plane when exposing the exposure areas PA1 to PA6 of the substrate P. . Based on the exposure recipe, the control device CONT irradiates the pattern region MA on the lower surface of the mask M with the exposure light EL while moving the mask M and the substrate P synchronously in the scanning direction, and the substrate through the pattern region MA. The exposure areas EL on the surface of P are irradiated with exposure light EL to expose the exposure areas PA1 to PA6.

  In the present embodiment, the exposure processing for the plurality of exposure areas PA1 to PA6 provided on the substrate P is performed by scanning the exposure areas PA1 to PA6 with respect to the projection areas PR1 to PR7 along the surface (XY plane) of the substrate P. The pattern area MA of the mask M is moved in the scanning direction along the lower surface (XY plane) of the mask M with respect to the illumination areas IR1 to IR7.

  In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the X-axis direction, and the scanning direction (synchronous movement direction) of the mask M is also the X-axis direction. For example, when exposing the exposure area PA1 of the substrate P, the control device CONT moves the exposure area PA1 of the substrate P in the X-axis direction with respect to the projection areas PR1 to PR7, and moves the substrate P in the X-axis direction. In synchronization with the illumination areas IR1 to IR7, the pattern area MA of the mask M is moved in the X-axis direction, and the illumination areas IR1 to IR7 are irradiated with the exposure light EL, so that the exposure light EL from the mask M is irradiated. The projection areas PR1 to PR7 are irradiated through the projection optical system PL. Thereby, the exposure area PA1 of the substrate P is exposed by the exposure light EL irradiated to the projection areas PR1 to PR7, and the pattern image of the pattern area MA of the mask M is projected onto the exposure area PA1 of the substrate P.

  For example, after the exposure of the exposure area PA1 is completed, in order to expose the next exposure area (for example, the exposure area PA2), the control device CONT has the projection areas PR1 to PR7 arranged at the exposure start position of the next exposure area PA2. As described above, the substrate stage 2 is controlled to move the substrate P in a predetermined direction within the XY plane with respect to the projection regions PR1 to PR7. Further, the control device CONT controls the mask stage 1 to move the mask M with respect to the illumination areas IR1 to IR7 so that the illumination areas IR1 to IR7 are arranged at the exposure start positions of the pattern area MA. Then, after the projection areas PR1 to PR7 are arranged at the exposure start position of the exposure area PA2, and the illumination areas IR1 to IR7 are arranged at the exposure start position of the pattern area MA, the control device CONT performs the exposure of the exposure area PA2. Start.

  The control unit CONT irradiates the substrate P with the exposure light EL while synchronously moving the mask M held by the mask stage 1 and the substrate P held by the substrate stage 2 in the X-axis direction, and exposes the next exposure region. In order to achieve this, the mask M is provided with a plurality of exposure areas PA1 to PA6 provided on the substrate P while repeating the stepping movement of the substrate P in a predetermined direction (for example, the X-axis direction) in the XY plane. Sequential exposure is performed via the pattern and projection optical system PL.

Next, an example of a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration will be described with reference to FIG. FIG. 8 is a flowchart showing an exposure method according to this embodiment.
First, the control device CONT carries (loads) the mask M into the mask stage 1. After the mask M is held on the mask stage 1, a setup process including an alignment process of the mask M, various measurement processes, and a calibration process is executed based on the exposure recipe.

  In the present embodiment, the alignment process of the mask M is performed by receiving an image of an alignment mark (not shown) arranged on the mask M by the light receiving device 46 via the projection system PS and the transmission unit 45, and in the XY plane. The process of measuring the position of M is included.

  The measurement process includes, for example, a process of measuring the illuminance of the exposure light EL emitted from each of the projection optical systems PL1 to PL7 using the light receiving device 51, and the imaging characteristics of the projection optical systems PL1 to PL7 using the light receiving device 46. The measurement process and the positional relationship (baseline amount) between the detection areas AL1 to AL6 of the alignment system 9 and the projection position of the pattern image of the mask M are measured using the alignment system 9, the transmission unit 45, the light receiving device 46, and the like. Includes at least one of the processes to measure.

  The calibration process is based on the process of adjusting the illuminance of the exposure light EL emitted from each of the illumination modules IL1 to IL7 using the result of the measurement process, and the measurement result of the imaging characteristic measured using the light receiving device 46. Thus, at least one of the processes for adjusting the imaging characteristics of the projection optical systems PL1 to PL7 using the imaging characteristics adjusting device 30 is included.

  After completing the above processes, the control device CONT carries the substrate P into the substrate stage 2 at a predetermined timing. The substrate P is in a state in which a photosensitive material such as a resist is coated on the surface in advance by a separate coating apparatus or the like. After the substrate P is held on the substrate stage 2, a process for adjusting the exposure conditions is executed based on the exposure recipe. The exposure condition includes, for example, at least one of a projection magnification of the projection image by the projection optical systems PL1 to PL7, an imaging condition such as a projection position and rotation of the projection image, and a substrate arrangement condition regarding the position and orientation of the substrate P. .

  In the exposure condition adjustment process, the control device CONT first detects alignment marks m1 to m6 provided on the substrate P. After detecting the alignment mark, the control device CONT drives the imaging characteristic adjusting device 30 and the substrate stage 2 of the projection optical systems PL1 to PL7 in accordance with the detection result, and adjusts the exposure conditions.

  After the exposure condition adjustment process, as shown in FIG. 9, the first pattern MP1 is transferred to the substrate P under the adjusted exposure conditions (step S1: first transfer step). The first pattern MP1 includes, for example, predetermined circuit patterns r11 to r16 formed in the exposure areas PA1 to PA6, and alignment marks m11 to m16 formed at positions corresponding to the four rows of alignment marks m1 to m6. Pattern is included.

  Thereafter, the above processing is repeated in the same lot. The same lot includes a group of a plurality of substrates P exposed using the same mask M. At least in the same lot, exposure is performed under the same exposure recipe. The exposed substrate P is carried out of the exposure apparatus EX, and each step such as a development step and a step of forming a first layer (first layer) based on the first pattern MP1 is appropriately performed. It will be. When another layer (second layer) is laminated on the substrate P on which the first layer is formed, a photosensitive layer is formed on the surface of the substrate P (the surface of the first layer).

  The control device CONT carries (loads) the mask M corresponding to the second layer to be formed on the substrate P onto the mask stage 1. After the mask M is held on the mask stage 1, the control device CONT includes the alignment process, various measurement processes, and the calibration process of the mask M as in the case of forming the first layer based on the exposure recipe. Run the setup process.

  After completing the above processes, the control device CONT carries the substrate P into the substrate stage 2 at a predetermined timing. After the substrate P is held on the substrate stage 2, the control device CONT executes a process for adjusting the exposure conditions based on the exposure recipe. In the exposure condition adjustment processing, the control device CONT measures the pattern information of the first pattern MP1 shown in FIG. 9 (step S2: first measurement step).

  Here, the pattern information of the first pattern MP1 includes positional information (X coordinate, Y coordinate, Z coordinate, etc.) of the patterns of predetermined circuit patterns r11 to r16 and alignment marks m11 to m16 formed as the first pattern MP1. )including. In the present embodiment, specifically, the control device CONT assigns four alignment marks m11 to m16 (row R1 to row R4 shown in FIG. 9) provided on the substrate P, for example, row R1, row R2, row R3. The pattern information of the first pattern MP1 is measured by detecting in the order of the row R4.

  After measuring the pattern information of the first pattern MP1, the control device CONT calculates the exposure condition adjustment amount using the position information related to the measurement result (first measurement result). The control device CONT drives the imaging characteristic adjustment device 30 of the projection optical systems PL1 to PL7 and the drive system 4 (adjustment device) of the substrate stage 2 according to the calculated adjustment amount, and adjusts the above exposure conditions ( Step S3: First adjustment step). In addition, for each substrate P, the control device CONT stores, for example, the first measurement result of the first pattern MP1 and the exposure condition (or adjustment amount of the exposure condition) corresponding to the first measurement result in association with each other. deep. For example, the control device CONT creates a data table in which identification data for each substrate P, measurement result data of the first pattern MP1, and exposure condition data are associated with each other.

  After adjusting the exposure conditions, as shown in FIG. 10, the first pattern MP2 is transferred to the substrate P under the adjusted exposure conditions (step S4: second transfer step). The second pattern MP2 includes, for example, predetermined circuit patterns r21 to r26 formed in the exposure areas PA1 to PA6, respectively, and is formed at positions corresponding to the four rows of alignment marks m1 to m6 and m11 to m16. A pattern of alignment marks m21 to m26 is included.

  Thereafter, in the same lot, the processes according to steps S2 to S4 are repeated. The exposed substrate P is carried out of the exposure apparatus EX, and various processes such as a developing process and a process of forming a second layer based on the second pattern MP2 are appropriately performed. When another layer (third layer) is laminated on the substrate P on which the second layer is formed, a photosensitive layer is formed on the surface of the substrate P (the surface of the second layer).

  The control device CONT carries (loads) the mask M corresponding to the third layer to be formed on the substrate P onto the mask stage 1. After the mask M is held on the mask stage 1, the control device CONT performs the alignment process, various measurement processes, and calibration of the mask M in the same manner as when the first layer and the second layer are formed based on the exposure recipe. Execute setup processing including application processing.

  After completing the above processes, the control device CONT carries the substrate P into the substrate stage 2 at a predetermined timing. After the substrate P is held on the substrate stage 2, the control device CONT executes a process for adjusting the exposure conditions based on the exposure recipe. In the exposure condition adjustment processing, the control device CONT measures the pattern information of the second pattern MP2 shown in FIG. 10 (step S5: second measurement step).

  The pattern information of the second pattern MP2 includes position information (X coordinate, Y coordinate, Z coordinate, etc.) of predetermined circuit patterns r21 to r26 and alignment marks m21 to m26 formed as the second pattern MP2. . In the present embodiment, the control device CONT selects the most + X side row and the most -X side row (row R1 and row R4 shown in FIG. 10) among the four rows of alignment marks m21 to m26 provided on the substrate P. For example, the pattern information of the second pattern MP2 is measured by detecting in order of the row R1 and the row R4. In step S5, since only two rows are detected among the four rows of alignment marks m21 to m26, the detection time is shorter than when all four rows are detected.

  After measuring the pattern information of the second pattern MP2, the control device CONT uses the position information related to the measurement result (second measurement result) in the second measurement step for the columns R1 and R4, For the column R3, the exposure condition adjustment amount is calculated using the position information related to the first measurement result in the first measurement step. In the second adjustment step, the control device CONT identifies the substrate P using the identification information of the substrate P, and the first measurement result for the same substrate P as the substrate P that has detected the alignment marks m21 to m26. Select and use data. The control device CONT drives the imaging characteristic adjustment device 30 of the projection optical systems PL1 to PL7 and the drive system 4 of the substrate stage 2 according to the calculated adjustment amount, and adjusts the above exposure conditions (Step S6: No. 1). Two adjustment steps).

  The control device CONT stores, for each substrate P, the second measurement result of the second pattern MP2, the exposure condition (or exposure condition adjustment amount) corresponding to the second measurement result, and the like. . For example, the control device CONT creates a data table in which identification data for each substrate P, measurement result data of the first pattern MP1, measurement result data of the second pattern MP2, and exposure condition data are associated with each other. .

  After adjusting the exposure conditions in the second adjustment step, as shown in FIG. 11, the third pattern MP3 is transferred to the substrate P under the adjusted exposure conditions (step S7: third transfer step). The third pattern MP3 includes, for example, predetermined circuit patterns r31 to r36 respectively formed in the exposure areas PA1 to PA6, and positions corresponding to the four rows of alignment marks m1 to m6, m11 to m16, and m21 to m26. The pattern of the alignment marks m31 to m36 formed in is included.

  Thereafter, in the same lot, the processes according to steps S5 to S7 are repeated. The exposed substrate P is carried out of the exposure apparatus EX, and various processes such as a developing process and a process of forming a third layer based on the third pattern MP3 are appropriately performed. When another layer (fourth layer) is laminated on the substrate P on which the third layer is formed, the control device CONT uses the substrate P on which the photosensitive layer is formed on the surface (third surface), The above steps S5 to S7 are repeated.

  In the exposure processing as described above, the present inventors tend to cause distortion in the substrate P when the substrate P is placed on the substrate stage 2 when no layer is formed on the substrate P. It has been found that when the substrate P is placed on the substrate stage 2 after the layer (for example, the first layer) is formed, the substrate P is relatively hardly distorted.

  For this reason, as shown in FIG. 12A, when the first pattern MP1 is transferred in a state where the substrate P is placed on the substrate stage 2 while being distorted, when the placement of the substrate P is released, for example, As shown in FIG. 12B, the pattern of the first layer is deformed and distorted. On the other hand, after the first layer is formed on the substrate P, distortion hardly occurs even if the first layer is placed on the substrate stage 2, so that in the transfer step after the second layer is formed, as shown in FIG. The transfer images (PA1 to PA6) need to be superimposed on the first pattern MP1 formed in a deformed state. Since the first pattern MP1 is in a deformed state, it is necessary to adjust the transfer image.

  Based on this, in the present embodiment, in the first measurement step after the first layer is formed on the substrate P, the pattern of the first pattern MP1 is detected by detecting the four rows of alignment marks m11 to m16 provided on the substrate P. In the second measurement step after that, among the four rows of alignment marks m21 to m26 provided on the substrate P, one row on the most + X side and one row on the most −X side (rows shown in FIG. 10). R1 and column R4) are detected in the order of column R1 and column R4, for example, so that the pattern information of the second pattern MP2 is measured.

  Both the first measurement step and the second measurement step are steps performed after a certain layer (for example, the first layer or the second layer) is formed on the substrate P. In each step, distortion generated in the substrate P on the substrate stage 2 is small, and there is no great difference between the state of the substrate P in the first measurement step and the state of the substrate P in the second measurement step. Can be estimated. Therefore, as in the present embodiment, only the two rows are detected without detecting the four rows of alignment marks m21 to m26 in the second step, and the first measurement result in the first measurement step is used for the rest. However, it can be estimated that the measurement accuracy does not decrease. As a result, the transfer conditions can be adjusted with high accuracy. In addition, since the detection time can be shortened compared to the case where all of the four rows of alignment marks m21 to m26 are detected in the second measurement step, high throughput can be achieved.

[Second Embodiment]
Next, a second embodiment of the present invention will be described.
FIG. 13 is a view showing the arrangement of the exposure system SYS according to this embodiment. The exposure system SYS includes a plurality of, for example, two exposure apparatuses EX1 and EX2, and a main controller HC that performs overall control of the exposure apparatuses EX1 and EX2. The exposure apparatus EX1 and the exposure apparatus EX2 have the same configuration as the exposure apparatus EX of the first embodiment. The exposure apparatus EX1 has a control apparatus CONT1, and the exposure apparatus EX2 has a control apparatus CONT2. Further, the substrate P, the first pattern MP1, the second pattern MP2, and the third pattern MP3 will be described with the same reference numerals as those in the first embodiment.

  In the present embodiment, a case will be described where differences in imaging conditions and substrate arrangement conditions can occur between lots, such as when the second pattern MP2 and the third pattern MP3 are transferred by different exposure apparatuses. In the present embodiment, for example, the case where the transfer of the first pattern MP1 and the second pattern MP2 is performed by the exposure apparatus EX1 and the transfer of the third pattern MP3 is performed by the exposure apparatus EX2 will be described as an example.

  Since the exposure apparatus EX1 and the exposure apparatus EX2 often include some errors in various exposure conditions including the imaging conditions and the substrate arrangement conditions, the calibration process is frequently performed. Therefore, in the present embodiment, pattern information of each pattern is measured in conjunction with the calibration process, and exposure conditions such as an imaging condition and a substrate arrangement condition are adjusted based on the measurement result.

Hereinafter, the exposure operation in the exposure system SYS will be described. FIG. 14 is a flowchart showing the exposure operation in the present embodiment. In this embodiment, the aspect of a 2nd measurement step differs from 1st embodiment.
The control device CONT1 loads (loads) the mask M onto the mask stage 1 and performs a setup process, and then a substrate P in a state where a photosensitive material such as a resist is coated on the surface by a separate coating device or the like in advance. It is carried into the substrate stage 2 at the timing. After the substrate P is held on the substrate stage 2, the control device CONT1 causes the first transfer step, the first measurement step, the first adjustment step, and the second transfer step to be performed by the same procedure as in the first embodiment. .

  The control device CONT1 uses the first measurement result of the pattern information of the first pattern MP1 obtained in the first measurement step (here, the positional information of the alignment marks m11 to m16) and the exposure corresponding to the first measurement result. Conditions (or exposure condition adjustment amounts) and the like are stored in association with each other. For example, the control device CONT1 creates a data table in which identification data for each substrate P, measurement result data of the first pattern MP1, and exposure condition data are associated with each other. The control device CONT1 transmits the created data table to the main control device HC.

  The exposed substrate P is carried out of the exposure apparatus EX, and various processes such as a developing process and a process of forming a second layer based on the second pattern MP2 are appropriately performed. The substrate P on which the second layer is formed is carried into the exposure apparatus EX2 with a photosensitive layer for forming the third layer formed on the surface (the surface of the second layer). The control device CONT2 of the exposure apparatus EX2 carries in a mask corresponding to the third pattern MP3 of the third layer and performs various setup processes.

  The control device CONT2 measures the pattern information of the second pattern MP2 after the substrate P is held on the substrate stage 2 (second measurement step). In the present embodiment, the control device CONT2 is provided on the substrate P as in the first measurement step, for example, for the first several substrates P (sample substrates) in the same lot including the plurality of substrates P. For example, the four rows of alignment marks m21 to m26 are detected in the order of row R1, row R2, row R3, and row R4, thereby measuring the pattern information of the second pattern MP2 (step ST201).

  After measuring the pattern information of the second pattern MP2 on the sample substrate, the control device CONT2 measures the position information on the measurement result (second measurement result) in the second measurement step and the measurement in the first measurement step of the sample substrate. Difference information with respect to the position information related to the result (first measurement result) is calculated (step ST202). When calculating the difference information, the control device CONT2 receives data related to the first measurement result for the sample substrate from the main control device HC, and calculates the difference information using the data and the second measurement result. As the difference information, for example, the amount of deviation of the X coordinate, the Y coordinate, the Z coordinate, the θX coordinate, the θY coordinate, and the θZ coordinate between the first measurement result and the second measurement result can be cited.

  After calculating the difference information for each sample substrate, the control device CONT2 compares the difference information between the sample substrates (step ST203). As a result of the comparison, if the error between the sample substrates of the difference information is within a predetermined threshold (YES in step ST204), the control device CONT2 determines that the difference information is between the devices between the exposure apparatus EX1 and the exposure apparatus EX2. Judged to be caused by environmental differences.

  After the determination, the control device CONT2, for example, calculates an average value of individual difference information for the sample substrate, and subtracts the average value of the difference information from the exposure condition of the exposure apparatus EX1, thereby calculating an adjustment amount of the exposure condition. (Step ST205). The control device CONT2 adjusts the exposure conditions based on the calculated adjustment amount (step ST206). In addition, using the value of the difference information for one sample substrate among the plurality of sample substrates, the value of the one difference information is subtracted from the exposure condition of the exposure apparatus EX1, and the exposure condition is adjusted based on the obtained value. It does n’t matter.

  In addition, when the error between the sample substrates of the difference information is within a predetermined threshold as a result of the comparison, the control device CONT2 also applies the difference information of the substrate P (object substrate) after the sample substrate in the same lot. Estimate that the error is a similar value. Thereafter, the control device CONT2 detects only two columns R1 and R4 among the four alignment marks m21 to m26 in the same manner as the second measurement step of the first embodiment for the object substrate. By doing so, pattern information is measured (step ST207). The control device CONT2 calculates the adjustment amount of the drive system 4 of the substrate stage 2 and the imaging characteristic adjustment device 30 of the projection optical systems PL1 to PL7 based on the measurement result and the calculated exposure condition, and the calculation result Based on this, the exposure condition is adjusted (step ST208).

  On the other hand, as a result of the comparison, when the error between the difference information sample substrates exceeds a predetermined threshold (NO in step ST204), the control device CONT2 determines that the difference information error is between the exposure apparatus EX1 and the exposure apparatus. It is determined that there is a possibility that the difference information is different for each sample substrate, not necessarily due to an environmental difference between apparatuses with EX2.

  After the determination, the control device CONT2 subtracts the difference information for the sample substrate from the exposure condition of the exposure apparatus EX1 for each sample substrate, and individually calculates the adjustment amount of the exposure condition for each sample substrate (step ST209). ). The control device CONT2 individually adjusts the exposure conditions for each sample substrate based on the individually obtained values (step ST210).

  In addition, when the error between the difference information sample substrates exceeds a predetermined threshold as a result of the comparison, the control device CONT2 estimates that the difference information error also differs for each substrate P for the object substrate. Thereafter, the control device CONT2 also measures the pattern information by detecting the four alignment marks m21 to m26 in the order of, for example, the column R1, the column R2, the column R3, and the column R4 for the object substrate (step ST211). The control device CONT2 individually calculates the adjustment amounts of the drive system 4 of the substrate stage 2 and the imaging characteristic adjustment device 30 of the projection optical systems PL1 to PL7 based on the measurement results, and exposure is performed based on the calculation results. The conditions are adjusted (step ST212).

  After adjusting the exposure conditions by the above procedure, the controller CONT2 transfers the third pattern MP3 (step ST213: third transfer step).

  When the second pattern MP2 and the third pattern MP3 are transferred by different exposure apparatuses as in this embodiment, for example, as shown in FIG. 15, for example, with respect to the circuit patterns r11 to r16 of the first pattern MP1. In some cases, a difference occurs in the image formation conditions and the substrate arrangement conditions of the transfer images (PA1 to PA6).

  On the other hand, in the present embodiment, in the second measurement step, for example, the alignment marks m21 to m26 in the rows R1 to R4 are detected for the sample substrate, and between the second measurement result and the first measurement result. The difference information was calculated. And based on a calculation result, selecting whether alignment mark m21-m26 of row | line | column R1-R4 is detected about an object board | substrate, or a one part row | line | column is detected among alignment mark m21-m26 of row | line | column R1-R4. It was. Thereby, it is possible to prevent an error in the exposure condition between lots and to prevent a reduction in exposure accuracy.

  In this embodiment, the second pattern MP2 and the third pattern MP3 are transferred by different exposure apparatuses EX1 and EX2. However, the present invention is not limited to this. For example, the second pattern MP2 and the third pattern MP3 are transferred. Even when the pattern MP3 is transferred by the same exposure apparatus, the present embodiment can be described.

  In the present embodiment, the aspect of adjusting the exposure condition based on the difference information calculated by the control device CONT2 has been described. However, the present invention is not limited to this. For example, the calculation result of the difference information is output. It does not matter. For example, the exposure system includes a display device (not shown), and the calculation result of the difference information is displayed on the display device. In this case, an exposure condition can be set manually by an operator of the exposure system SYS based on the displayed calculation result.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, although the case where the alignment marks m11 to m16 and m21 to m26 are detected has been described as an example of measuring the pattern information of the first pattern MP1 and the second pattern MP2 in the above embodiment, the present invention is not limited to this. . For example, the control device CONT detects the pattern information of the first pattern MP1 and the second pattern MP2 by detecting part of the circuit patterns r11 to r16 and r21 to r26 formed in the exposure areas PA1 to PA6. It doesn't matter.

  The description of the above embodiment can also be applied to the case where the pattern information for the patterns after the third pattern MP3 is measured. In this case, the pattern information may be measured by detecting a part of the circuit pattern after the third pattern MP3.

  In the above embodiment, in the second adjustment step, when some of the four alignment marks m21 to m26 are detected, the most + X side column R1 and the most −X side column R4 are detected. However, the present invention is not limited to this, and may be a mode in which other two columns are detected, a mode in which three columns are detected, or a mode in which one column is detected. When detecting one row, for example, the magnification obtained in the Y direction is also applied to the X direction, or the measurement value of the sample substrate is used when obtaining the orthogonality of the object substrate, for example, and the alignment is performed at high speed. It is also possible to do this.

  In the second embodiment, when the difference information is calculated, the difference between the measurement values of the first measurement result and the second measurement result is taken. However, the present invention is not limited to this. For example, a difference between linear components of the first measurement result and the second measurement result, a difference between nonlinear components, and the like may be calculated and the calculated values may be used.

  Further, in the above-described embodiment, the aspect of performing measurement and transfer in the exposure apparatus has been described as an example. However, the present invention is not limited to this. For example, as illustrated in FIG. 16, the measurement apparatus and the transfer apparatus are provided separately from the exposure apparatus EX3. The pattern (first pattern MP1, second pattern MP2) may be measured using the inspection apparatus TA to be used. According to the configuration shown in FIG. 16, the substrate P is transferred between the inspection apparatus TA and the exposure apparatus EX3 by the transport apparatus CR. The operations of the exposure apparatus EX3 and the inspection apparatus TA are comprehensively controlled by the main controller HC3.

  The main controller HC3 causes the inspection device TA to perform a first measurement step and a second measurement step. Further, the main controller HC3 causes the exposure apparatus EX3 to perform the first transfer step, the second transfer step, and the third transfer step, and the first adjustment step and the second adjustment step. Of course, the exposure apparatus EX3 and the inspection apparatus TA may each have a control device, and the operation may be individually controlled.

  Note that the use of the exposure apparatus EX is not limited to a liquid crystal exposure apparatus that exposes a liquid crystal display element pattern on a square glass plate. For example, an exposure apparatus for manufacturing a semiconductor or a thin film magnetic head is manufactured. Therefore, the present invention can be widely applied to an exposure apparatus.

The light source of the exposure apparatus EX of this embodiment is not only g-line (436 nm), h-line (405 nm), i-line (365 nm), but also KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ laser ( 157 nm) can be used.

  Each magnification of the projection optical systems PL1 to PL7 is not limited to the equal magnification system, and may be either a reduction system or an enlargement system.

  In the embodiment described above, the case of manufacturing a liquid crystal display element has been described as an example, but of course, not only an exposure apparatus used for manufacturing a liquid crystal display element but also a display including a semiconductor element or the like. An exposure apparatus used to transfer a device pattern onto a semiconductor substrate, an exposure apparatus used to manufacture a thin film magnetic head to transfer a device pattern onto a ceramic wafer, and an exposure apparatus used to manufacture an image sensor such as a CCD The present invention can also be applied to.

  In the above-described embodiment, the present invention is applied to a multi-scanning projection exposure apparatus in which each of the projection optical systems PL1 to PL7 includes a pair of catadioptric optical systems 31 and 32. The present invention can also be applied to a multi-scanning projection exposure apparatus of a type having two or more imaging optical systems. In the above-described embodiment, the case where the projection optical systems PL1 to PL5 are configured as a multi type has been described as an example. However, the present invention is a projection optical system other than the multi type, that is, a projection optical system having a single lens barrel. It can also be applied to.

  Next, an embodiment of a method of manufacturing a micro device using an exposure apparatus according to an embodiment of the present invention in a lithography process will be described. FIG. 17 is a flowchart showing a part of a manufacturing process when manufacturing a semiconductor device as a micro device. First, in step S10 of FIG. 17, a metal film is deposited on one lot of wafers. In the next step S12, a photoresist is applied on the metal film on the wafer of one lot. Thereafter, in step S14, using the exposure apparatus EX shown in FIG. 1, the image of the pattern on the mask M is sequentially exposed to each shot area on the wafer of one lot via the projection optical system (projection system). Transcribed.

  Thereafter, in step S16, the photoresist on the one lot of wafers is developed (development process), and then in step S18, the resist pattern is used as an etching mask on the one lot of wafers to form a mask. A circuit pattern corresponding to the upper pattern is formed in each shot area on each wafer. Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the semiconductor device manufacturing method described above, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput.

  In each of the above exposure apparatuses, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on the substrate P. Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG. FIG. 18 is a flowchart showing a part of a manufacturing process when manufacturing a liquid crystal display element as a micro device.

  In the pattern forming step S20 in FIG. 18, a so-called photolithography step is performed in which the pattern of the mask M is transferred and exposed to a photosensitive substrate (such as a glass substrate coated with a resist) using the exposure apparatus EX or the like of the present embodiment. Is done. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a development step, an etching step, and a reticle peeling step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step S22.

  Next, in the color filter forming step S22, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. And cell assembly process S24 is performed after color filter formation process S22. In the cell assembly step S24, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step S20 and the color filter obtained in the color filter formation step S22.

  In the cell assembling step S24, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step S20 and the color filter obtained in the color filter forming step S22. ). Thereafter, in a module assembly step S26, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete the liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high throughput.

  EX, EX1, EX2, EX3 ... Exposure device P ... Substrate CONT, CONT1, CONT2 ... Control devices m1-m6, m11-m16, m21-m26, m31-m36 ... Alignment mark PL (PL1-PL7) ... Projection optical system r11 -R16, m21-m26, m31-m36 ... Circuit pattern SYS, SYS2 ... Exposure system HC, HC3 ... Main controller TA ... Inspection device 2 ... Substrate stage 4 ... Drive system 30 ... Imaging characteristic adjustment device

Claims (21)

An exposure method for transferring a first pattern, a second pattern and a third pattern on a substrate,
A first transfer step of transferring the first pattern to the substrate under a predetermined transfer condition;
A first measurement step of measuring pattern information of the transferred first pattern;
A first adjustment step of adjusting the transfer condition based on a first measurement result related to the pattern information of the first pattern;
A second transfer step of transferring the second pattern to the substrate under the adjusted transfer conditions;
A second measuring step of measuring the pattern information of the transferred second pattern;
A second adjustment step of adjusting the transfer condition based on the second measurement result regarding the pattern information of the second pattern and the first measurement result;
A third transfer step of transferring the third pattern to the substrate under the adjusted transfer conditions. An exposure method for transferring a first pattern, a second pattern and a third pattern on a plurality of substrates,
A first transfer step of transferring the first pattern to a plurality of the substrates under a predetermined transfer condition;
A first measurement step of measuring the pattern information of the transferred first pattern for each substrate;
A first adjustment step of adjusting the transfer condition for each of the substrates based on a first measurement result relating to the pattern information of the first pattern;
A second transfer step of transferring the second pattern to the plurality of substrates under the adjusted transfer conditions;
A second measurement step of measuring the pattern information of the transferred second pattern for each of the substrates;
A second adjustment step of adjusting the transfer condition for each of the substrates based on the first measurement result of the same substrate among the plurality of substrates and the second measurement result of the pattern information of the second pattern;
A third transfer step of transferring the third pattern onto the plurality of substrates under the adjusted transfer conditions. The pattern information includes a plurality of predetermined mark position information provided,
The second adjustment step includes
Detecting a predetermined number of the marks among the plurality of marks for at least a first type of substrate among the plurality of substrates;
For each of the first type of substrates, calculating difference information regarding the difference between the first measurement result and the second measurement result;
The exposure method according to claim 2, further comprising adjusting the transfer condition based on a calculation result. The exposure method according to claim 3, wherein the second adjustment step includes outputting the calculation result. In the second adjustment step, the predetermined number of marks is detected for the second type of substrates among the plurality of substrates based on the second measurement result for the first type of substrates, or the predetermined The exposure method according to claim 3, further comprising: selecting whether to detect the mark having a score smaller than the score. The second adjustment step includes adjusting each of the transfer conditions based on an average value of detection results for the detection of the predetermined number of marks among the first measurement result and the second measurement result. The exposure method according to any one of claims 3 to 5. The second adjustment step includes adjusting each of the transfer conditions based on one detection result of detection of the predetermined number of marks among the first measurement result and the second measurement result. The exposure method according to any one of claims 3 to 6. The exposure method according to claim 1, wherein the pattern information includes at least one of position information of a plurality of predetermined marks and position information of a predetermined circuit pattern. Transferring the first pattern, the second pattern and the third pattern includes projecting an image of the first pattern, the second pattern and the third pattern onto the substrate;
The transfer condition includes at least one of a projection magnification of the image, a projection position, an imaging condition regarding rotation of the projected image, and a substrate arrangement condition regarding the position and orientation of the substrate. The exposure method according to claim 8. A transfer device for transferring the first pattern, the second pattern, and the third pattern on the substrate,
A measuring device for measuring pattern information of at least a first pattern and a second pattern transferred to the substrate disposed in the transfer device;
An adjusting device for adjusting transfer conditions of the substrate disposed in the transfer device;
A first transfer operation for transferring the first pattern to the substrate under a predetermined transfer condition; a first measurement operation for measuring pattern information of the first pattern transferred to the substrate; and the pattern information of the first pattern. A first adjustment operation for adjusting the transfer condition based on a first measurement result, a second transfer operation for transferring the second pattern to the substrate under the adjusted transfer condition, and the pattern of the transferred second pattern A second measurement operation for measuring information, a second measurement operation for adjusting the transfer condition based on the second measurement result related to the pattern information of the second pattern, and the first measurement result, and the adjusted An exposure apparatus comprising: a control device that performs a third transfer operation for transferring the third pattern onto the substrate under transfer conditions. A transfer device for transferring the first pattern, the second pattern, and the third pattern on a plurality of substrates,
A measuring device that measures, for each substrate, pattern information of at least a first pattern and a second pattern transferred to each of the substrates disposed in the transfer device;
An adjustment device for adjusting the transfer conditions of each of the substrates arranged in the transfer device for each substrate;
A first transfer operation for transferring the first pattern to a plurality of the substrates under a predetermined transfer condition; a first measurement operation for measuring pattern information of the transferred first pattern for each substrate; and the first pattern A first adjustment operation for adjusting the transfer condition for each of the substrates based on a first measurement result relating to the pattern information, and a second transfer for transferring the second pattern to the plurality of substrates under the adjusted transfer conditions An operation, a second measurement operation for measuring the pattern information of the transferred second pattern for each substrate, the first measurement result for the same substrate among the plurality of substrates, and the second pattern Based on a second measurement result relating to pattern information, a second adjustment operation for adjusting the transfer condition for each of the substrates, and transfer of the third pattern to a plurality of the substrates under the adjusted transfer condition. Third transfer operation and an exposure device and a control device to perform the. The pattern information includes a plurality of predetermined mark position information provided,
The second adjusting operation is
Detecting a predetermined number of the marks among the plurality of marks for at least a first type of substrate among the plurality of substrates;
For each of the first type of substrates, calculating difference information regarding the difference between the first measurement result and the second measurement result;
The exposure apparatus according to claim 11, comprising adjusting the transfer condition based on a calculation result. The exposure apparatus according to claim 12, wherein the second adjustment operation includes outputting the calculation result. In the second adjustment operation, the predetermined number of marks is detected for the second type of substrates among the plurality of substrates based on the second measurement result for the first type of substrates, or the predetermined The exposure apparatus according to claim 12, further comprising: selecting whether to detect the mark having a score smaller than the score. The second adjustment operation includes adjusting each of the transfer conditions based on an average value of detection results of detection of the predetermined number of marks among the first measurement result and the second measurement result. The exposure apparatus according to any one of Items 12 to 14. The second adjustment operation includes adjusting each of the transfer conditions based on one detection result of detection of the predetermined number of marks among the first measurement result and the second measurement result. The exposure apparatus according to any one of claims 12 to 15. The exposure apparatus according to claim 10, wherein the pattern information includes at least one of position information of a plurality of predetermined marks and position information of a predetermined circuit pattern. A projection optical system for projecting the image of the first pattern, the second pattern and the third pattern on the substrate;
11. The transfer condition includes at least one of a projection magnification of the projection optical system, a projection position, an imaging condition regarding rotation of the projected image, and a substrate arrangement condition regarding the position and orientation of the substrate. The exposure apparatus according to any one of claims 1 to 17. An exposure apparatus comprising: a transfer device that transfers the first pattern, the second pattern, and the third pattern on the substrate, and an adjustment device that adjusts transfer conditions of the substrate disposed in the transfer device;
A measuring device that has a transport unit for transporting the substrate to and from the exposure device, and measures pattern information of at least a first pattern and a second pattern transferred to the substrate disposed in the transfer device; ,
A first transfer operation for transferring the first pattern to the substrate under a predetermined transfer condition; a first measurement operation for measuring pattern information of the first pattern transferred to the substrate; and the pattern information of the first pattern. A first adjustment operation for adjusting the transfer condition based on a first measurement result, a second transfer operation for transferring the second pattern to the substrate under the adjusted transfer condition, and the pattern of the transferred second pattern A second measurement operation for measuring information, a second measurement operation for adjusting the transfer condition based on the second measurement result related to the pattern information of the second pattern, and the first measurement result, and the adjusted An exposure system comprising: a control device that performs a third transfer operation for transferring the third pattern onto the substrate under transfer conditions. A transfer device that transfers the first pattern, the second pattern, and the third pattern on a plurality of substrates, and an adjustment device that adjusts the transfer conditions of each of the substrates arranged in the transfer device for each substrate; An exposure apparatus having
A transfer unit configured to transfer the substrate to and from the exposure apparatus; and pattern information of at least a first pattern and a second pattern transferred to each of the substrates arranged in the transfer apparatus for each substrate A measuring device for measuring
A first transfer operation for transferring the first pattern to a plurality of the substrates under a predetermined transfer condition; a first measurement operation for measuring pattern information of the transferred first pattern for each substrate; and the first pattern A first adjustment operation for adjusting the transfer condition for each of the substrates based on a first measurement result relating to the pattern information, and a second transfer for transferring the second pattern to the plurality of substrates under the adjusted transfer conditions An operation, a second measurement operation for measuring the pattern information of the transferred second pattern for each substrate, the first measurement result for the same substrate among the plurality of substrates, and the second pattern Based on a second measurement result relating to pattern information, a second adjustment operation for adjusting the transfer condition for each of the substrates, and transfer of the third pattern to a plurality of the substrates under the adjusted transfer condition. Exposure system comprising a third transfer operation, and a control device to perform the. Exposing the substrate using the exposure method according to any one of claims 1 to 9,
Developing the exposed substrate to form an exposure pattern layer corresponding to the first pattern, the second pattern, and the third pattern;
Processing the substrate via the exposed pattern layer.

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